TW201447312A

TW201447312A - Chip and circuit board with same

Info

Publication number: TW201447312A
Application number: TW102120817A
Authority: TW
Inventors: Jyun-Da Liao; Yu-Jen Chen; Chia-Ming Yeh
Original assignee: Hon Hai Prec Ind Co Ltd
Priority date: 2013-06-11
Filing date: 2013-06-11
Publication date: 2014-12-16

Abstract

The present invention relates to a chip and a circuit board with the same. The circuit board includes at least a chip. The chip includes a signal output terminal and a temperature sensor component placed inside of the chip. The temperature sensor component detects the temperature inside of the chip, and adjusts an output signal output from the signal output terminal according to the detected temperature.

Description

晶片及具有該晶片的電路板Wafer and circuit board having the same

本發明涉及一種晶片及具有該晶片的電路板。The present invention relates to a wafer and a circuit board having the same.

目前，電子裝置，比如伺服器電源中會用有一些晶片，這些晶片之間或者晶片與其他電子元件之間相互配合，以驅動電子裝置工作。通常，這些晶片在工作的時候常常會散發一定的熱量，這些熱量積累起來對晶片的性能造成一定影響，比如會影響到晶片輸出電壓訊號的大小，進而對電子裝置的性能造成影響。Currently, electronic devices, such as server power supplies, use wafers that interact with each other or between the chip and other electronic components to drive the electronic device to operate. Usually, these wafers often emit a certain amount of heat during operation. These heat accumulations have an effect on the performance of the wafer, such as affecting the size of the output voltage signal of the wafer, thereby affecting the performance of the electronic device.

有鑑於此有必要提供一種能夠感測內部溫度的晶片。In view of this, it is necessary to provide a wafer capable of sensing the internal temperature.

也有必要提供一種具有能夠感測內部溫度晶片的電路板。It is also necessary to provide a circuit board having a wafer capable of sensing internal temperatures.

一種晶片，該晶片包括一訊號輸出端，該晶片內部還包括一溫度感測元件，該溫度感測元件用於偵測該晶片內部的溫度，該晶片根據偵測到的溫度調整該訊號輸出端的輸出訊號。A chip includes a signal output terminal, the chip further includes a temperature sensing component for detecting a temperature inside the wafer, and the wafer adjusts the signal output end according to the detected temperature. Output signal.

一種電路板，該電路板包括至少一晶片，該晶片包括一訊號輸出端，該晶片內部還包括一溫度感測元件，該溫度感測元件用於偵測該晶片內部的溫度，該晶片根據偵測到的溫度調整該訊號輸出端的輸出訊號。A circuit board comprising at least one chip, the chip comprising a signal output end, the chip further comprising a temperature sensing component, wherein the temperature sensing component is configured to detect a temperature inside the wafer, the chip is based on the detection The measured temperature adjusts the output signal of the signal output.

與先前技術相較，由於該溫度感測元件直接設置於該晶片的內部，因此，能夠在該晶片溫度過高時及時作出反應，起到了及時調整該晶片的輸出訊號的技術效果。Compared with the prior art, since the temperature sensing element is directly disposed inside the wafer, it is possible to react in time when the temperature of the wafer is too high, thereby achieving the technical effect of adjusting the output signal of the wafer in time.

1、2．．．電路板1, 2. . . Circuit board

10、20．．．晶片10, 20. . . Wafer

VCC．．．電源輸入端VCC. . . Power input

EN．．．使能訊號輸入端EN. . . Enable signal input

Po．．．訊號輸出端Po. . . Signal output

Pr．．．冗餘引腳Pr. . . Redundant pin

Ctr．．．控制訊號輸入端Ctr. . . Control signal input

11、21．．．溫度感測元件11, 21. . . Temperature sensing element

12、22．．．比較單元12, 22. . . Comparison unit

13、23．．．調整單元13,23. . . Adjustment unit

14、24．．．訊號產生單元14, 24. . . Signal generating unit

圖1為本發明晶片一較佳實施方式的結構示意圖。1 is a schematic structural view of a preferred embodiment of a wafer of the present invention.

圖2為採用本發明晶片的電路板一較佳實施方式的結構示意圖。2 is a schematic view showing the structure of a circuit board using the wafer of the present invention.

請參閱圖1，其為本發明晶片一較佳實施方式的結構示意圖。在本實施方式中，該晶片10包括電源輸入端VCC，使能訊號輸入端EN，訊號輸出端Po，溫度感測元件11，比較單元12，調整單元13及訊號產生單元14。Please refer to FIG. 1 , which is a schematic structural view of a preferred embodiment of a wafer according to the present invention. In this embodiment, the chip 10 includes a power input terminal VCC, an enable signal input terminal EN, a signal output terminal Po, a temperature sensing component 11, a comparison unit 12, an adjustment unit 13 and a signal generating unit 14.

該電源輸入端VCC用於接收一外部電源電壓，以為該晶片10提供工作所需要的電壓。該使能訊號輸入端EN用於接收一外部使能訊號，以驅動該晶片10工作。該訊號產生單元14用於產生一預定大小的電壓訊號。該訊號輸出端Po與該訊號產生單元14的訊號輸出端相連，用於將該訊號產生單元14產生的一預定大小的電壓訊號輸出，舉例而言，該預定大小的電壓訊號為電壓值為5V的電壓訊號。可以理解地，該晶片10並不僅限於包括上述舉例所述類型的訊號輸入端及訊號輸出端，還可以包括其他類型的訊號輸入端及訊號輸出端。The power supply input terminal VCC is for receiving an external power supply voltage to provide the wafer 10 with the voltage required for operation. The enable signal input terminal EN is configured to receive an external enable signal to drive the wafer 10 to operate. The signal generating unit 14 is configured to generate a voltage signal of a predetermined size. The signal output terminal Po is connected to the signal output end of the signal generating unit 14 for outputting a predetermined size of the voltage signal generated by the signal generating unit 14. For example, the predetermined size of the voltage signal is a voltage value of 5V. Voltage signal. It can be understood that the chip 10 is not limited to the signal input terminal and the signal output terminal of the type described above, and may also include other types of signal input terminals and signal output terminals.

該溫度感測元件11設置於該晶片10的內部，用於偵測該晶片10內部的溫度，以得到第一溫度。優選地，該溫度感測元件11鄰近該晶片10內溫度較高的模組設置，一般而言，在一個晶片包含複數模組時，使用的頻率較高的模組相較於使用頻率較低的模組溫度高。該晶片10能夠根據偵測到的溫度調整該訊號輸出端Po的輸出訊號。具體調整過程詳細描述如下。The temperature sensing element 11 is disposed inside the wafer 10 for detecting the temperature inside the wafer 10 to obtain a first temperature. Preferably, the temperature sensing component 11 is disposed adjacent to the module having a higher temperature in the wafer 10. Generally, when a chip includes multiple modules, the module with higher frequency is used lower than the frequency of use. The module temperature is high. The chip 10 is capable of adjusting the output signal of the signal output terminal Po according to the detected temperature. The specific adjustment process is described in detail below.

該比較單元12與該溫度感測元件11相連，用於接收該第一溫度，並將該第一溫度與一預設的第一預設溫度進行比較，並將該第一溫度與該第一預設溫度的差值轉換為一電訊號自其輸出端輸出。該第一預設溫度錶示該晶片10的訊號輸出端Po輸出符合要求的電壓值時所處於的工作溫度的上限值，也就是說，該晶片10的工作溫度維持或不超過該第一預設溫度時，該晶片10自該訊號輸出端Po輸出的電壓訊號未受到溫度變化的干擾，為一標準輸出電壓。The comparing unit 12 is connected to the temperature sensing component 11 for receiving the first temperature, comparing the first temperature with a preset first preset temperature, and comparing the first temperature with the first The difference in preset temperature is converted to a signal output from its output. The first preset temperature indicates an upper limit value of the operating temperature at which the signal output terminal Po of the wafer 10 outputs a voltage value that meets the required value, that is, the operating temperature of the wafer 10 is maintained or not exceeding the first When the temperature is preset, the voltage signal outputted by the chip 10 from the signal output terminal Po is not interfered by the temperature change, and is a standard output voltage.

該調整單元13與該比較單元12的輸出端相連，用於根據該比較單元12輸出的不同的電訊號產生相應的控制訊號，並該控制訊號輸出至訊號產生單元14，以控制該訊號產生單元14依據相應的控制訊號調整該訊號輸出端Po輸出電壓的電壓值。具體地，當該第一溫度大於該第一預設溫度時，該晶片10會由於其內部溫度的升高，導致訊號輸出端Po輸出的電壓值降低。可以理解地，不同的表徵第一溫度減去該第一預設溫度的差值的電訊號對應不同的控制訊號。The adjusting unit 13 is connected to the output end of the comparing unit 12 for generating a corresponding control signal according to the different electrical signals output by the comparing unit 12, and the control signal is output to the signal generating unit 14 to control the signal generating unit. 14 Adjusting the voltage value of the output voltage of the signal output terminal Po according to the corresponding control signal. Specifically, when the first temperature is greater than the first preset temperature, the wafer 10 may cause a voltage value of the signal output terminal Po to decrease due to an increase in the internal temperature thereof. It can be understood that different electrical signals representing the difference between the first temperature minus the first preset temperature correspond to different control signals.

該訊號產生單元14與該調整單元13的輸出端相連，用於在相應的控制訊號的控制下調整輸出電壓的大小，以補償該晶片10內部溫度過高而導致的自該訊號輸出端Po輸出的電壓降低的情形，以使該訊號輸出端Po輸出的電壓值等於該晶片10的標準輸出電壓，並將調整後得到的標準輸出電壓輸出至該訊號輸出端Po。The signal generating unit 14 is connected to the output end of the adjusting unit 13 for adjusting the magnitude of the output voltage under the control of the corresponding control signal to compensate for the output from the signal output terminal Po caused by the internal temperature of the wafer 10 being too high. The voltage is reduced in such a manner that the voltage output value of the signal output terminal Po is equal to the standard output voltage of the wafer 10, and the adjusted standard output voltage is output to the signal output terminal Po.

在本實施方式中，該溫度感測元件11為負溫度係數的溫度感測元件（Negative Temperature Coefficient，NTC），即，隨著晶片10內部溫度的升高，該溫度感測元件TR的電阻值下降。在一變更實施方式中，該溫度感測元件11為正溫度係數的溫度感測元件（Positive Temperature Coefficient，PCT），即，隨著晶片10內部溫度的升高，該溫度感測元件TR的電阻值上升。在一實施方式中，該溫度感測元件11為熱敏電阻。In the present embodiment, the temperature sensing element 11 is a negative temperature coefficient (Negative Temperature Coefficient (NTC)), that is, the resistance value of the temperature sensing element TR increases as the internal temperature of the wafer 10 increases. decline. In a modified embodiment, the temperature sensing element 11 is a positive temperature coefficient (Positive Temperature Coefficient, PCT), that is, the resistance of the temperature sensing element TR as the internal temperature of the wafer 10 increases. The value rises. In an embodiment, the temperature sensing element 11 is a thermistor.

可以理解地是，該晶片10可集成於一電路板1上。It can be understood that the wafer 10 can be integrated on a circuit board 1.

請參閱圖2，其為採用本發明晶片20的電路板2的一較佳實施方式的結構示意圖。該電路板2包括晶片20、比較單元22及調整單元23。該晶片20包括電源輸入端VCC，使能訊號輸入端EN，訊號輸出端Po，溫度感測元件21，訊號產生單元24以及控制訊號輸入端Ctr。Please refer to FIG. 2, which is a schematic structural view of a preferred embodiment of a circuit board 2 using the wafer 20 of the present invention. The circuit board 2 includes a wafer 20, a comparison unit 22, and an adjustment unit 23. The chip 20 includes a power input terminal VCC, an enable signal input terminal EN, a signal output terminal Po, a temperature sensing component 21, a signal generating unit 24, and a control signal input terminal Ctr.

本實施方式與之前的實施方式基本相同，不同之處在於，比較單元22及調整單元23不再集成於該晶片20內部，而是位於該電路板2上。該晶片20還包括至少一個冗餘引腳Pr，該溫度感測元件21用於將該第一溫度經由該冗餘引腳Pr輸出至該比較單元22。該晶片10包括控制訊號輸入端Ctr，自該調整單元23輸出的控制訊號經由該控制訊號輸入端Ctr輸出至該訊號產生單元24。在本實施方式中，溫度感測元件21、比較單元22、調整單元23及訊號產生單元24的功能和溫度感測元件11、比較單元12、調整單元13及訊號產生單元14的功能相同，在此不再贅述。This embodiment is basically the same as the previous embodiment, except that the comparison unit 22 and the adjustment unit 23 are no longer integrated inside the wafer 20, but are located on the circuit board 2. The wafer 20 further includes at least one redundancy pin Pr for outputting the first temperature to the comparison unit 22 via the redundancy pin Pr. The chip 10 includes a control signal input terminal Ctr. The control signal outputted from the adjustment unit 23 is output to the signal generating unit 24 via the control signal input terminal Ctr. In the present embodiment, the functions of the temperature sensing element 21, the comparing unit 22, the adjusting unit 23, and the signal generating unit 24 are the same as those of the temperature sensing element 11, the comparing unit 12, the adjusting unit 13, and the signal generating unit 14, This will not be repeated here.

該溫度感測元件11、21可於該晶片10、20的半導體製造的過程中形成，以減小該晶片10、20製造時的成本。The temperature sensing elements 11, 21 can be formed during the semiconductor fabrication of the wafers 10, 20 to reduce the cost of manufacturing the wafers 10, 20.

雖然本發明以該晶片10的訊號輸出端Po進行說明，所屬領域一般技術人員可以理解，該晶片10的訊號輸出端並不僅限於該訊號輸出端Po。Although the present invention is described with the signal output terminal Po of the wafer 10, those skilled in the art can understand that the signal output terminal of the wafer 10 is not limited to the signal output terminal Po.

與先前技術相較，由於該溫度感測元件11、21直接設置於該晶片10、20的內部，因此，能夠在該晶片10、20溫度過高時及時作出反應，起到了及時調整該晶片10、20的輸出訊號的效果。Compared with the prior art, since the temperature sensing elements 11, 21 are directly disposed inside the wafers 10, 20, it is possible to react in time when the temperature of the wafers 10, 20 is too high, thereby adjusting the wafer 10 in time. , 20 output signal effects.

雖然本發明以優選實施方式揭示如上，然其並非用以限定本發明，任何本領域技術人員，在不脫離本發明的精神和範圍內，當可做各種的變化，這些依據本發明精神所做的變化，都應包含在本發明所要求的保護範圍之內。While the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the scope of the present invention, and various changes can be made by those skilled in the art without departing from the spirit and scope of the invention. Changes are intended to be included within the scope of the claimed invention.

1．．．電路板1. . . Circuit board

10．．．晶片10. . . Wafer

VCC．．．電源輸入端VCC. . . Power input

EN．．．使能訊號輸入端EN. . . Enable signal input

Po．．．訊號輸出端Po. . . Signal output

11．．．溫度感測元件11. . . Temperature sensing element

12．．．比較單元12. . . Comparison unit

13．．．調整單元13. . . Adjustment unit

14．．．訊號產生單元14. . . Signal generating unit

Claims

一種晶片，該晶片包括一訊號輸出端，其中，該晶片內部還包括一溫度感測元件，該溫度感測元件用於偵測該晶片內部的溫度，該晶片根據偵測到的溫度調整該訊號輸出端的輸出訊號。A chip includes a signal output terminal, wherein the chip further includes a temperature sensing component for detecting a temperature inside the wafer, and the chip adjusts the signal according to the detected temperature The output signal at the output.

如請求項1所述的晶片，其中，該晶片還包括比較單元，調整單元及訊號產生單元，該溫度感測元件偵測該晶片內部的溫度以得到第一溫度，該比較單元用於接收該第一溫度，並將該第一溫度與一預設的第一預設溫度進行比較，並將該第一溫度與該第一預設溫度的差值轉換為一電訊號輸出，該調整單元用於根據該比較單元輸出的電訊號產生相應的控制訊號，該訊號產生單元用於在相應的控制訊號的控制下調整輸出至該訊號輸出端的輸出訊號的大小。The wafer of claim 1, wherein the wafer further comprises a comparison unit, an adjustment unit and a signal generation unit, the temperature sensing element detects a temperature inside the wafer to obtain a first temperature, and the comparison unit is configured to receive the The first temperature is compared with a preset first preset temperature, and the difference between the first temperature and the first preset temperature is converted into an electrical signal output, and the adjusting unit is used by the adjusting unit Corresponding control signals are generated according to the electrical signals output by the comparing unit, and the signal generating unit is configured to adjust the size of the output signals outputted to the signal output terminals under the control of the corresponding control signals.

如請求項1所述的晶片，其中，該溫度感測元件為負溫度係數溫度感測元件。The wafer of claim 1, wherein the temperature sensing element is a negative temperature coefficient temperature sensing element.

如請求項1所述的晶片，其中，該溫度感測元件為正溫度係數溫度感測元件。The wafer of claim 1, wherein the temperature sensing element is a positive temperature coefficient temperature sensing element.

如請求項1所述的晶片，其中，該晶片還包括至少一冗餘引腳，該溫度感測元件用於將該第一溫度經由該冗餘引腳輸出。The wafer of claim 1, wherein the wafer further comprises at least one redundant pin, the temperature sensing element for outputting the first temperature via the redundant pin.

一種電路板，該電路板包括至少一晶片，該晶片包括一訊號輸出端，其中，該晶片內部還包括一溫度感測元件，該溫度感測元件用於偵測該晶片內部的溫度，該晶片根據偵測到的溫度調整該訊號輸出端的輸出訊號。A circuit board comprising at least one chip, the chip comprising a signal output end, wherein the chip further comprises a temperature sensing component for detecting a temperature inside the wafer, the wafer The output signal of the signal output is adjusted according to the detected temperature.

如請求項6所述的電路板，其中，該電路板還包括比較單元，調整單元，該晶片還包括訊號產生單元，該溫度感測元件偵測該晶片內部的溫度以得到第一溫度，該比較單元用於接收該第一溫度並將該第一溫度與一預設的第一預設溫度進行比較，並將該第一溫度與該第一預設溫度的差值轉換為一電訊號輸出，該調整單元用於根據該比較單元輸出的電訊號產生相應的控制訊號，該訊號產生單元用於在相應的控制訊號的控制下調整輸出至該訊號輸出端的輸出訊號的大小。The circuit board of claim 6, wherein the circuit board further comprises a comparing unit, the adjusting unit, the chip further comprising a signal generating unit, wherein the temperature sensing element detects a temperature inside the chip to obtain a first temperature, The comparing unit is configured to receive the first temperature and compare the first temperature with a preset first preset temperature, and convert the difference between the first temperature and the first preset temperature into an electrical signal output The adjusting unit is configured to generate a corresponding control signal according to the electrical signal output by the comparing unit, and the signal generating unit is configured to adjust the size of the output signal outputted to the signal output end under the control of the corresponding control signal.

如請求項7所述的電路板，其中，該比較單元及該調整單元均設置於該晶片的內部。The circuit board of claim 7, wherein the comparison unit and the adjustment unit are both disposed inside the wafer.

如請求項7所述的電路板，其中，該比較單元及該調整單元均設置於該晶片的外部。The circuit board of claim 7, wherein the comparison unit and the adjustment unit are both disposed outside the wafer.

如請求項6所述的電路板，其中，該晶片還包括至少一冗餘引腳，該溫度感測元件用於將該第一溫度經由該冗餘引腳輸出。
The circuit board of claim 6, wherein the chip further comprises at least one redundant pin, the temperature sensing element for outputting the first temperature via the redundant pin.