TW201446325A

TW201446325A - High-throughput particle production using a plasma system

Info

Publication number: TW201446325A
Application number: TW103109803A
Authority: TW
Inventors: Maximilian A Biberger; David Leamon; Frederick P Layman; Pual Lefevre
Original assignee: Sdcmaterials Inc
Priority date: 2013-03-14
Filing date: 2014-03-14
Publication date: 2014-12-16
Also published as: JP2016522734A; IL241205A0; RU2015143900A; KR20150128732A; EP2974560A1; MX2015011656A; CA2903449A1; AU2014244509A1; CN105284193A; WO2014159736A1; HK1220857A1; EP2974560A4; CN105284193B; BR112015022424A2

Abstract

The present disclosure relates to a nanoparticle production system and methods of using the system. The nanoparticle production system includes a plasma gun including a male electrode, a female electrodes and a working gas supply configured to deliver a working gas in a vortexing helical flow direction across a plasma generation region. The system also includes a continuous feed system, a quench chamber, a cooling conduit that includes a laminar flow disruptor, a system overpressure module, and a conditioning fluid purification and recirculation system.

Description

使用電漿系統的高產量粒子生產 High-yield particle production using a plasma system

[相關申請案之交叉參考][Cross-Reference to Related Applications]

本申請案主張2013年3月14日申請之美國臨時專利申請案第61/784,299號、2013年8月9日申請之美國臨時專利申請案第61/864,350號、2013年10月2日申請之美國臨時專利申請案第61/885,988號、2013年10月2日申請之美國臨時專利申請案第61/885,990號、2013年10月2日申請之美國臨時專利申請案第61/885,996號及2013年10月2日申請之美國臨時專利申請案第61/885,998號之優先權權利。該等申請案之全文以引用方式併入本文中。 The present application claims US Provisional Patent Application No. 61/784,299, filed on March 14, 2013, and U.S. Provisional Patent Application No. 61/864,350, filed on Aug. 9, 2013, filed on October 2, 2013 U.S. Provisional Patent Application No. 61/885,996, U.S. Provisional Patent Application No. 61/885,990, filed on Oct. 2, 2013, and U.S. Provisional Patent Application No. 61/885,996, filed on October 2, 2013 Priority rights to U.S. Provisional Patent Application Serial No. 61/885,998, filed on Oct. 2, the. The entire contents of these applications are hereby incorporated by reference.

本發明係關於使用一電漿來提供高產量粒子生產之系統及方法。 This invention relates to systems and methods for using a plasma to provide high throughput particle production.

可使用其中將一或多種供給材料供給至使用一工作氣體來產生電漿之一電漿槍中之一電漿生產系統來形成奈米粒子。該電漿使該等供給材料汽化，接著，該等供給材料經冷凝以在一淬火反應中形成奈米粒子。接著，該等奈米粒子可被收集且用於各種工業應用。 Nanoparticles can be formed using one or more of the supply materials supplied to a plasma production system using one of the working gases to produce one of the plasmas. The plasma vaporizes the feed materials, and then the feed materials are condensed to form nanoparticles in a quenching reaction. These nanoparticles can then be collected and used in a variety of industrial applications.

典型的基於電漿之粒子生產系統已使其能力受限於保持與一致材料產量之連續操作且通常基於實驗室規模及試驗工廠規模設計。此等系統對質量/容積產量通常有嚴格限制。此使得一致品質及大小的奈米粒子之工業規模生產效率低下。 Typical plasma-based particle production systems have limited their ability to maintain continuous operation with consistent material throughput and are typically designed based on laboratory scale and pilot plant scale. this Systems such as mass/volume production usually have strict limits. This makes industrial scale production of consistent quality and size of nanoparticles inefficient.

本發明描述奈米粒子生產系統、此等系統內所使用之器件及使用該等系統及器件之方法。該等奈米粒子生產系統可包含一電漿槍，其包含一凸形電極、一凹形電極及一工作氣體供應器，該工作氣體供應器經組態以沿一渦旋流方向橫跨一電漿產生區域而輸送一工作氣體。該等系統亦可包含下列之一或多者：一連續供給系統、一淬火腔室、包含一層流擾動器之一冷卻導管、一系統超壓模組及一調節流體淨化及再循環系統。本發明亦設想併入此等特徵之各種組合的系統，且在一些情況中，具有此等特徵之組合的系統提供不同技術優點，諸如可連續操作系統之時間長度之改良、所生產之粒子之品質或數量之改良及/或生產系統之效率之改良。使用此等系統來製造奈米粒子之方法亦形成本發明之部分。 The present invention describes nanoparticle production systems, devices used in such systems, and methods of using such systems and devices. The nanoparticle production system can include a plasma gun including a convex electrode, a concave electrode, and a working gas supply configured to traverse a vortex flow direction The plasma generation zone delivers a working gas. The systems may also include one or more of the following: a continuous supply system, a quenching chamber, a cooling conduit including a layer of flow disruptors, a system overpressure module, and a conditioning fluid purification and recirculation system. The present invention also contemplates systems incorporating various combinations of such features, and in some cases, systems having combinations of such features provide different technical advantages, such as improved length of time for a continuous operating system, produced particles Improvements in quality or quantity and/or improvement in the efficiency of the production system. Methods of making nanoparticles using such systems also form part of the invention.

在一些實施方案中，一種奈米粒子生產系統包含：一電漿槍；及一連續供給系統，其經組態依每分鐘至少9克之一速率將材料供給至該電漿槍中。 In some embodiments, a nanoparticle production system comprises: a plasma gun; and a continuous supply system configured to supply material to the plasma gun at a rate of at least 9 grams per minute.

在該等實施例之任何者中，該連續供給系統可經組態以在至少336個小時內將材料無阻塞地供給至該電漿槍。在該等實施例之任何者中，該連續供給系統可包含多個材料供給供應通道以將供給材料供應至該電漿槍。在該等實施例之任何者中，該連續供給系統可包含一往復構件以在該奈米粒子生產系統之操作期間連續清掃一材料供給供應通道。在該等實施例之任何者中，該往復構件可依每秒至少2次之一速率往復。 In any of the embodiments, the continuous supply system can be configured to supply material to the plasma gun in a non-blocking manner for at least 336 hours. In any of the embodiments, the continuous supply system can include a plurality of material supply supply channels to supply the supply material to the plasma gun. In any of the embodiments, the continuous supply system can include a reciprocating member to continuously sweep a material supply supply passage during operation of the nanoparticle production system. In any of the embodiments, the reciprocating member can reciprocate at a rate of at least 2 times per second.

在該等實施例之任何者中，該連續供給系統可包含一脈衝氣體射流以在該奈米粒子生產系統之操作期間連續清掃一材料供給供應通道。 In any of the embodiments, the continuous supply system can include a pulsed gas jet to continuously sweep a material supply supply during operation of the nanoparticle production system Road.

在該等實施例之任何者中，該電漿槍可包含一凸形電極、一凹形電極及一工作氣體供應器，該工作氣體供應器經組態以沿渦旋流方向橫跨形成於該凸形電極與該凹形電極之間之一電漿產生區域而輸送一工作氣體。 In any of the embodiments, the plasma gun can include a convex electrode, a concave electrode, and a working gas supply, the working gas supply configured to be formed across the vortex flow direction A working region is formed by a plasma generating region between the convex electrode and the concave electrode.

在該等實施例之任何者中，該工作氣體供應器可包含定位於該電漿產生區域之前以產生該渦旋流方向之一注射環。在該等實施例之任何者中，該注射環可包含複數個注射口。在該等實施例之任何者中，該等注射口可圍繞該凸形電極安置於一環形形成物中。在該等實施例之任何者中，該等注射口可朝向該凸形電極成角度。 In any of the embodiments, the working gas supply can include an injection ring positioned prior to the plasma generating region to produce the direction of the vortex flow. In any of the embodiments, the injection ring can comprise a plurality of injection ports. In any of the embodiments, the injection ports can be disposed in an annular formation about the convex electrode. In any of the embodiments, the injection ports can be angled toward the convex electrode.

在該等實施例之任何者中，該等注射口可遠離該凸形電極成角度。在該等實施例之任何者中，該奈米生產系統能夠在無需替換該凸形電極或該凹形電極之情況下操作至少336個小時。 In any of the embodiments, the injection ports can be angled away from the convex electrode. In any of these embodiments, the nanoproduction system can operate for at least 336 hours without replacing the convex electrode or the concave electrode.

在該等實施例之任何者中，該奈米粒子生產系統可進一步包含定位於該電漿槍之後且包含至少一反應混合物輸入及至少一調節流體輸入之一淬火腔室。在該等實施例之任何者中，該淬火腔室可具有一截頭圓錐形形狀且可經組態以在操作期間產生具有大於1000之雷諾(Reynolds)數之紊流。 In any of the embodiments, the nanoparticle production system can further comprise a quenching chamber positioned behind the plasma gun and comprising at least one reaction mixture input and at least one conditioning fluid input. In any of these embodiments, the quenching chamber can have a frustoconical shape and can be configured to produce turbulence with a Reynolds number greater than 1000 during operation.

該等實施例之任何者可進一步包含經組態以將一調節流體流中所夾帶之奈米粒子自該淬火腔室傳導至一收集器之一冷卻導管。在該等實施例之任何者中，該冷卻導管可包含一層流擾動器。在該等實施例之任何者中，該層流擾動器可包含葉片、擋板、一螺旋螺釘、隆脊或凸塊。在該等實施例之任何者中，該粒子生產系統可經組態以在該冷卻導管中不發生阻塞之情況下連續操作至少6個小時。該等實施例之任何者可進一步包含經組態以將一調節流體流中所夾帶之奈米粒子自該淬火腔室傳導至一收集器之一冷卻導管。在該等實施例之任何者中，該冷卻導管可包含一層流擾動器。在該等實施例之任何者中，該層流擾動器可包含葉片、擋板、一螺旋螺釘、隆脊或凸塊。在該等實施例之任何者中，該粒子生產系統可經組態以在該冷卻導管中不發生阻塞之情況下連續操作至少336個小時。 Any of the embodiments can further include a cooling conduit configured to conduct nanoparticle entrained in a conditioning fluid stream from the quenching chamber to a collector. In any of these embodiments, the cooling conduit can include a layer of flow disruptor. In any of the embodiments, the laminar flow disruptor can comprise a blade, a baffle, a screw, a ridge or a bump. In any of the embodiments, the particle production system can be configured to operate continuously for at least 6 hours without clogging in the cooling conduit. Any of the embodiments can further include a cooling conduit configured to conduct nanoparticle entrained in a conditioning fluid stream from the quenching chamber to a collector. Any of the embodiments The cooling conduit can include a layer of flow disruptors. In any of the embodiments, the laminar flow disruptor can comprise a blade, a baffle, a screw, a ridge or a bump. In any of the embodiments, the particle production system can be configured to operate continuously for at least 336 hours without clogging in the cooling conduit.

該等實施例之任何者可進一步包含使該系統中之一壓力維持高於一經量測的周圍壓力之一系統超壓模組。在該等實施例之任何者中，可使該系統中之該壓力維持於比該經量測的周圍壓力高至少1英寸水柱之一壓力處。該等實施例之任何者可進一步包含使該系統中之一壓力維持高於一經量測的周圍壓力之一系統超壓模組。 Any of the embodiments can further include a system overpressure module that maintains one of the pressures in the system above a measured ambient pressure. In any of these embodiments, the pressure in the system can be maintained at a pressure that is at least one inch of water column above the measured ambient pressure. Any of the embodiments can further include a system overpressure module that maintains one of the pressures in the system above a measured ambient pressure.

該等實施例之任何者可進一步包含一調節流體淨化及再循環系統。在該等實施例之任何者中，可使引入至該奈米粒子生產系統中之該調節流體之至少80%淨化及再循環。 Any of these embodiments can further include a conditioning fluid purification and recirculation system. In any of these embodiments, at least 80% of the conditioning fluid introduced into the nanoparticle production system can be purified and recycled.

在一些實施例中，一種奈米粒子生產系統包含：一電漿槍，其包含一凸形電極、一凹形電極及一工作氣體供應器，該工作氣體供應器經組態以沿一渦旋流方向橫跨形成於該凸形電極與該凹形電極之間之一電漿產生區域而輸送一工作氣體；一連續供給系統，其經組態以依每分鐘至少9克之一速率將材料供給至該電漿槍中；一淬火腔室；其定位於該電漿槍之後且包含至少一反應混合物輸入及至少一調節流體輸入；一冷卻導管，其經組態以將一調節流體流中所夾帶之奈米粒子自該淬火腔室傳導至一收集器，其中該冷卻導管包括一層流擾動器；一系統超壓模組，其使該系統中之一壓力維持高於一經量測的周圍壓力；及一調節流體淨化及再循環系統。 In some embodiments, a nanoparticle production system includes: a plasma gun comprising a convex electrode, a concave electrode, and a working gas supply, the working gas supply configured to vortex along a vortex The flow direction transports a working gas across a plasma generating region formed between the convex electrode and the concave electrode; a continuous supply system configured to supply material at a rate of at least 9 grams per minute Into the plasma gun; a quenching chamber; positioned after the plasma gun and comprising at least one reaction mixture input and at least one conditioning fluid input; a cooling conduit configured to pass a conditioning fluid stream The entrained nanoparticle is conducted from the quenching chamber to a collector, wherein the cooling conduit includes a flow disruptor; a system overpressure module that maintains a pressure in the system above a measured ambient pressure And a conditioning fluid purification and recycling system.

100‧‧‧電漿系統 100‧‧‧ Plasma System

102‧‧‧電漿槍 102‧‧‧Plastic gun

104‧‧‧材料輸入供給系統 104‧‧‧Material input supply system

106‧‧‧淬火腔室 106‧‧‧Quenching chamber

108‧‧‧冷卻導管 108‧‧‧Cooling duct

110‧‧‧輸出收集系統 110‧‧‧Output collection system

112‧‧‧工作氣體 112‧‧‧Working gas

114‧‧‧調節流體 114‧‧‧Regulating fluid

116‧‧‧槍盒 116‧‧‧gun box

118‧‧‧真空泵/鼓風機 118‧‧‧Vacuum pump/blower

200‧‧‧電漿槍 200‧‧‧Plastic gun

202‧‧‧凸形電極 202‧‧‧ convex electrode

204‧‧‧凹形電極 204‧‧‧ concave electrode

206‧‧‧進入區域 206‧‧‧Entry area

208‧‧‧電漿區域 208‧‧‧The plasma area

209‧‧‧圓柱形通道 209‧‧‧Cylinder channel

210‧‧‧氣體入口 210‧‧‧ gas inlet

212‧‧‧出口 212‧‧‧Export

214‧‧‧材料注射口 214‧‧‧ material injection port

216‧‧‧材料供給通道 216‧‧‧Material supply channel

218‧‧‧冷卻環 218‧‧‧Cooling ring

220‧‧‧面板 220‧‧‧ panel

230‧‧‧電漿槍面板 230‧‧‧Plastic gun panel

232‧‧‧耐熱插塞 232‧‧‧Heat resistant plug

234‧‧‧冷卻環入口 234‧‧‧Cooling ring entrance

236‧‧‧冷卻環出口 236‧‧‧Cooling ring exit

300‧‧‧電漿槍 300‧‧‧Plastic gun

302‧‧‧凸形電極 302‧‧‧ convex electrode

304‧‧‧凹形電極 304‧‧‧ concave electrode

306‧‧‧進入區域 306‧‧‧Entry area

308‧‧‧電漿區域 308‧‧‧The plasma area

309‧‧‧圓柱形通道 309‧‧‧Cylinder channel

310‧‧‧氣體入口 310‧‧‧ gas inlet

312‧‧‧電漿槍出口 312‧‧‧ Plasma Gun Export

314‧‧‧材料注射口/注射供應口 314‧‧‧Material injection port / injection supply port

316‧‧‧材料供應通道 316‧‧‧Material supply channel

318‧‧‧材料供應器 318‧‧‧Materials

320‧‧‧可移除材料供應管 320‧‧‧Removable material supply tube

322‧‧‧往復柱塞器件 322‧‧‧Reciprocating plunger device

324‧‧‧柱塞 324‧‧‧Plunger

326‧‧‧柱塞外殼 326‧‧‧Plunger housing

328‧‧‧氣動活塞 328‧‧‧Pneumatic piston

330‧‧‧氣體源 330‧‧‧ gas source

332‧‧‧4通直接作用電磁閥/直接作用彈簧回位電磁閥 332‧‧‧4 direct acting solenoid valve/direct acting spring return solenoid valve

334‧‧‧柱塞頭/脈衝氣體射流系統 334‧‧‧Plunger head/pulse gas jet system

336‧‧‧氣體射流 336‧‧‧ gas jet

338‧‧‧氣體供應器 338‧‧‧ gas supply

340‧‧‧2通直接作用電磁閥 340‧‧‧2 direct acting solenoid valve

342‧‧‧壓力調節器 342‧‧‧pressure regulator

344‧‧‧壓力釋放閥 344‧‧‧ Pressure relief valve

346‧‧‧工作氣體注射環 346‧‧‧Working gas injection ring

348‧‧‧充氣腔室 348‧‧‧Inflatable chamber

350‧‧‧注射口 350‧‧ ‧ injection port

402‧‧‧電漿槍 402‧‧‧Plastic gun

404‧‧‧電漿槍出口 404‧‧‧Plastic gun export

406‧‧‧淬火腔室 406‧‧ ‧ quenching chamber

408‧‧‧吸力產生器 408‧‧‧Sucking generator

410‧‧‧淬火腔室出口 410‧‧‧Quenching chamber outlet

412‧‧‧冷卻導管 412‧‧‧Cooling duct

414‧‧‧槍盒 414‧‧‧gun box

416‧‧‧口 416‧‧‧ mouth

420‧‧‧紊流誘發射流 420‧‧‧ Turbulent flow

422‧‧‧管 422‧‧‧ tube

424‧‧‧噴霧噴嘴 424‧‧‧ spray nozzle

426‧‧‧環狀結構 426‧‧‧ ring structure

500‧‧‧環狀結構 500‧‧‧ ring structure

502‧‧‧內通道 502‧‧‧Internal passage

504‧‧‧紊流流體供應導管 504‧‧‧ Turbulent fluid supply conduit

506‧‧‧出口 506‧‧‧Export

602‧‧‧淬火腔室 602‧‧ ‧ quenching chamber

604‧‧‧淬火腔室射出口 604‧‧‧Quenching chamber exit

606‧‧‧冷卻導管 606‧‧‧Cooling duct

608‧‧‧層流擾動器 608‧‧‧Laminar flow perturbator

610‧‧‧層流擾動器流體源 610‧‧‧Laminar flow perturbator fluid source

612‧‧‧供應通道 612‧‧‧Supply channel

614‧‧‧層流擾動器流體注射口/層流注射口 614‧‧‧Laminar flow perturbator fluid injection port / laminar injection port

700‧‧‧層流擾動器 700‧‧‧Laminar flow perturbator

702‧‧‧馬達 702‧‧‧Motor

704‧‧‧桿 704‧‧‧ pole

706‧‧‧輪緣 706‧‧ rim

800‧‧‧氣體輸送系統 800‧‧‧ gas delivery system

802‧‧‧槍盒 802‧‧‧ gun box

804‧‧‧吸力產生器 804‧‧‧ suction generator

806‧‧‧冷卻導管 806‧‧‧Cooling duct

808‧‧‧收集器件 808‧‧‧Collection device

810‧‧‧過濾器元件 810‧‧‧Filter components

812‧‧‧系統超壓模組 812‧‧‧System Overpressure Module

814‧‧‧淬火腔室 814‧‧‧Quenching chamber

816‧‧‧調節流體儲存槽 816‧‧‧Adjustable fluid storage tank

818‧‧‧調節流體供應閥 818‧‧‧Regulating fluid supply valve

820‧‧‧調節流體供應導管 820‧‧‧Regulating fluid supply conduit

822‧‧‧壓力調節器 822‧‧‧pressure regulator

824‧‧‧壓力調節器 824‧‧‧pressure regulator

826‧‧‧壓力調節器 826‧‧‧pressure regulator

828‧‧‧壓力釋放閥 828‧‧‧ Pressure relief valve

830‧‧‧壓力釋放閥 830‧‧‧pressure relief valve

832‧‧‧控制部分 832‧‧‧Control section

834‧‧‧控制部分 834‧‧‧Control section

836‧‧‧控制部分 836‧‧‧Control section

838‧‧‧閥部分 838‧‧‧Valve part

840‧‧‧閥部分 840‧‧‧ valve part

842‧‧‧閥部分 842‧‧‧Valve part

902‧‧‧工作氣體 902‧‧‧Working gas

904‧‧‧供給材料 904‧‧‧Supply materials

906‧‧‧電漿槍 906‧‧‧Plastic gun

908‧‧‧淬火腔室 908‧‧‧Quenching chamber

910‧‧‧冷卻導管 910‧‧‧Cooling duct

912‧‧‧收集器件 912‧‧‧Collection device

914‧‧‧吸力產生器 914‧‧‧Sucking generator

916‧‧‧調節流體淨化系統/調節流體淨化及再循環系統 916‧‧‧Regulating Fluid Purification System / Regulating Fluid Purification and Recycling System

918‧‧‧壓縮機 918‧‧‧Compressor

920‧‧‧氣體淨化器 920‧‧‧ gas purifier

922‧‧‧釋放孔 922‧‧‧ release hole

924‧‧‧壓力釋放閥 924‧‧‧Pressure relief valve

926‧‧‧溫度控制模組 926‧‧‧temperature control module

928‧‧‧過濾器 928‧‧‧Filter

930‧‧‧壓力調節器 930‧‧‧pressure regulator

932‧‧‧壓力釋放閥 932‧‧‧pressure relief valve

934‧‧‧槍盒 934‧‧‧gun box

936‧‧‧背壓流迴路 936‧‧‧Back pressure circuit

938‧‧‧背壓調節器 938‧‧‧Back pressure regulator

1002‧‧‧系統超壓模組 1002‧‧‧System Overpressure Module

1004‧‧‧調節流體淨化及再循環系統/調節流體淨化系統 1004‧‧‧Regulating Fluid Purification and Recycling System / Conditioning Fluid Purification System

1006‧‧‧吸力產生器 1006‧‧‧Sucking generator

1008‧‧‧壓縮機 1008‧‧‧Compressor

1010‧‧‧氣體淨化器 1010‧‧‧ gas purifier

1012‧‧‧壓力釋放閥 1012‧‧‧ Pressure relief valve

1014‧‧‧溫度控制模組 1014‧‧‧ Temperature Control Module

1016‧‧‧過濾器 1016‧‧‧Filter

1018‧‧‧槍盒 1018‧‧‧gun box

1020‧‧‧調節流體儲存槽 1020‧‧‧Regulating fluid storage tank

1022‧‧‧調節流體供應閥 1022‧‧‧Regulating fluid supply valve

1024‧‧‧調節流體供應導管 1024‧‧‧Regulating fluid supply conduit

1026‧‧‧壓力調節器 1026‧‧‧pressure regulator

1028‧‧‧壓力調節器 1028‧‧‧pressure regulator

1030‧‧‧壓力調節器 1030‧‧‧ Pressure Regulator

1032‧‧‧控制部分 1032‧‧‧Control section

1034‧‧‧控制部分 1034‧‧‧Control section

1036‧‧‧控制部分 1036‧‧‧Control section

1038‧‧‧閥部分 1038‧‧‧Valve part

1040‧‧‧閥部分 1040‧‧‧Valve part

1042‧‧‧閥部分 1042‧‧‧Valve part

1044‧‧‧壓力調節器 1044‧‧‧pressure regulator

1046‧‧‧控制部分 1046‧‧‧Control section

1048‧‧‧閥部分 1048‧‧‧Valve part

1050‧‧‧壓力釋放閥 1050‧‧‧ Pressure relief valve

1052‧‧‧再循環導管 1052‧‧‧Recycling catheter

1054‧‧‧接合點 1054‧‧‧ joints

1056‧‧‧背壓流迴路 1056‧‧‧Back pressure circuit

1058‧‧‧背壓調節器 1058‧‧‧Back pressure regulator

1060‧‧‧壓力釋放閥 1060‧‧‧Pressure relief valve

1062‧‧‧壓力釋放閥 1062‧‧‧Pressure relief valve

1102‧‧‧電漿槍 1102‧‧‧Plastic gun

1104‧‧‧淬火腔室 1104‧‧‧Quenching chamber

1106‧‧‧冷卻導管 1106‧‧‧Cooling duct

1108‧‧‧收集器件 1108‧‧‧Collection device

1110‧‧‧過濾器元件 1110‧‧‧Filter components

1112‧‧‧吸力產生器 1112‧‧‧Sucking generator

1114‧‧‧感測器 1114‧‧‧Sensor

1116‧‧‧反脈衝流體儲存槽 1116‧‧‧Reverse pulse fluid storage tank

1118‧‧‧第一壓力調節器 1118‧‧‧First pressure regulator

1120‧‧‧反脈衝貯槽 1120‧‧‧Reverse pulse storage tank

1122‧‧‧第二壓力調節器 1122‧‧‧Second pressure regulator

1124‧‧‧反脈衝釋放導管 1124‧‧‧Reverse pulse release catheter

1126‧‧‧2通直接作用電磁閥 1126‧‧‧2 direct acting solenoid valve

1128‧‧‧收集容器 1128‧‧‧Collection container

圖1係用於產生奈米粒子之一電漿系統之一實施例之一示意圖；圖2A係具有一材料供給口之一電漿槍之一實施例之一示意圖；圖2B係具有一面板及冷卻環之一電漿槍之一實施例之一示意圖；圖2C係具有一電漿槍面板及冷卻環之一電漿槍之一替代實施例之一示意圖；圖2D係具有圖2B中所繪示之一電漿槍面板及冷卻環之一電漿槍之實施例之一切線位之一示意圖；圖2E係具有一減小電漿槍面板、一冷卻環及一較寬且具耐熱導電金屬襯裡之電漿通道的一電漿槍之一實施例之一示意圖；圖2F係具有圖2E中所繪示之一減小電漿槍面板、一冷卻環及一較寬且具耐熱導電金屬襯裡之電漿通道的一電漿槍之實施例之一切線位之一示意圖；圖3A係用於具有一工作氣體注射環及交替材料注射口以容許連續材料供給之一高產量粒子生產系統的一電漿槍之一實施例之一示意圖；圖3B係用於具有一工作氣體注射環及一往復柱塞器件以容許連續材料供給之一高產量粒子生產系統的一電漿槍之一實施例之一示意圖；圖3C係用於具有一工作氣體注射環及一脈衝空氣射流系統以容許連續材料供給之一高產量粒子生產系統的一電漿槍之一實施例之一示意圖；圖3D係用於具有一減小電漿槍面板、一冷卻環、一較寬且具耐熱導電金屬襯裡之電漿通道、一工作氣體注射環及交替材料注射口以容許連續材料供給之一高產量粒子生產系統的一電漿槍之一實施例之一示意圖；圖3E係用於具有一減小電漿槍面板、一冷卻環、一較寬且具耐熱導電金屬襯裡之電漿通道、一工作氣體注射環及一往復柱塞器件以容許連續材料供給之一高產量粒子生產系統的一電漿槍之一實施例之一示意圖；圖3F係用於具有一減小電漿槍面板、一冷卻環、一較寬且具耐熱導電金屬襯裡之電漿通道、一工作氣體注射環及一脈衝空氣射流系統以容許連續材料供給之一高產量粒子生產系統的一電漿槍之一實施例之一示意圖；圖4A係具有一超紊流淬火腔室及紊流誘發射流之一高產量粒子生產系統之一實施例之一示意圖；圖4B係具有一超紊流淬火腔室及紊流誘發射流之一高產量粒子生產系統之一替代實施例之一示意圖，其中該等紊流誘發射流互連於一環狀結構中；圖5係圖4B中所繪示之一環狀結構中之互連紊流誘發射流之一詳細示意圖；圖6A係具有一層流擾動器之一高產量粒子生產系統之一實施例之一示意圖；圖6B係具有一層流擾動器之一高產量粒子生產系統之一替代實施例之一示意圖；圖6C係具有使用空氣射流之一層流擾動器的一高產量粒子生產系統之一替代實施例之一示意圖；圖6D係具有使用旋轉軸向配置桿之一層流擾動器的一高產量粒子生產系統之一替代實施例之一示意圖；圖7係使用圖6D中所繪示之旋轉軸向配置桿之層流擾動器之一實施例之一切線位示意圖；圖8係具有使用恆定超壓之一氣體輸送系統的一高產量粒子生產系統之一實施例之一示意圖；圖9係具有一調節流體淨化及再循環系統之一高產量粒子生產系統之一實施例之一示意圖；及圖10係具有整合至使用恆定超壓之一氣體輸送系統之一系統超壓模組中之一調節流體淨化及再循環系統的一高產量粒子生產系統之一實施例之一示意圖；圖11係具有用於使一收集器件中之一過濾器元件不阻塞之一過濾器反脈衝系統的一高產量粒子生產系統之一實施例之一示意圖。 1 is a schematic view showing one embodiment of a plasma system for producing nano particles; FIG. 2A is a schematic view showing one embodiment of a plasma gun having a material supply port; FIG. 2B has a panel and One of the embodiments of a plasma gun of a cooling ring Figure 2C is a schematic view showing an alternative embodiment of a plasma gun panel and a cooling gun; Figure 2D is a plasma gun panel and a cooling ring of the type shown in Figure 2B. A schematic diagram of one of the positions of the embodiment of the slurry gun; FIG. 2E is a plasma gun having a reduced plasma gun panel, a cooling ring and a plasma passage with a wide heat-resistant conductive metal lining. FIG. 2F is an embodiment of a plasma gun having a plasma gun panel, a cooling ring, and a wider plasma channel with a heat-resistant conductive metal lining as depicted in FIG. 2E. Schematic diagram of one of the line positions; Figure 3A is a schematic diagram of one embodiment of a plasma gun for a high-yield particle production system having a working gas injection ring and an alternate material injection port to permit continuous material supply; Figure 3B A schematic diagram of one embodiment of a plasma gun for a high throughput particle production system having a working gas injection ring and a reciprocating plunger device to permit continuous material supply; Figure 3C is for use with a working gas injection Ring and pulse air jet system A schematic diagram of one embodiment of a plasma gun that allows continuous material supply to a high throughput particle production system; Figure 3D is used to have a reduced plasma gun panel, a cooling ring, a wider heat resistant conductive Schematic diagram of one of the plasma gun channels, a working gas injection ring and an alternate material injection port to allow continuous material supply to one of the plasma gun production systems; Figure 3E is used to have a reduction a small plasma gun panel, a cooling ring, a wide plasma channel with a heat-resistant conductive metal lining, a working gas injection ring and a reciprocating plunger device to allow continuous material supply to one of the high-yield particle production systems One embodiment of a pulp gun Figure 3F is for use with a reduced plasma gun panel, a cooling ring, a wider plasma channel with a heat resistant conductive metal lining, a working gas injection ring and a pulsed air jet system to allow continuous material Schematic diagram of one of the embodiments of a plasma gun for supplying a high-yield particle production system; FIG. 4A is one embodiment of a high-yield particle production system having a super-turbulent quenching chamber and a turbulent inductive emission stream Schematic; FIG. 4B is a schematic diagram of an alternative embodiment of a high-yield particle production system having a super-turbulent quenching chamber and a turbulent inductive emission stream, wherein the turbulent inducing streams are interconnected in a ring structure; 5 is a detailed schematic diagram of one of the interconnected turbulent evoked emission streams in one of the annular structures illustrated in FIG. 4B; FIG. 6A is a schematic diagram of one embodiment of a high-yield particle production system having a layer of flow disruptors; Figure 6B is a schematic diagram of an alternative embodiment of a high throughput particle production system having a layer of flow disruptors; Figure 6C is a high throughput particle production system having a laminar flow disruptor using an air jet A schematic diagram of an alternative embodiment; FIG. 6D is a schematic diagram of an alternative embodiment of a high throughput particle production system having a laminar flow disruptor using a rotating axial arrangement rod; FIG. 7 is a rotation illustrated in FIG. 6D Schematic diagram of one of the embodiments of a high-volume particle production system having a constant overpressure gas delivery system; FIG. Schematic diagram of one embodiment of a high throughput particle production system having a regulated fluid purification and recirculation system; and Figure 10 is a schematic illustration of one embodiment of a high throughput particle production system having one of the systemic overpressure modules integrated into a system overpressure module using a constant overpressure; Figure 11 is a A schematic diagram of one embodiment of a high throughput particle production system having a filter back pulse system for unblocking one of the filter elements in a collection device.

一典型奈米粒子生產系統可藉由將材料供給至一電漿流中而產生奈米粒子，藉此使該材料汽化且容許所生產之反應電漿混合物冷卻且凝結成奈米粒子及複合或「奈米上奈米(nano-on-nano)」粒子。接著，該等粒子可經收集以用於各種應用中。美國申請案第13/801,726號中描述較佳之奈米粒子及「奈米上奈米」粒子，該案之全文描述以引用方式併入本文中。 A typical nanoparticle production system can produce nanoparticle by feeding a material into a plasma stream, thereby vaporizing the material and allowing the produced reactive plasma mixture to cool and condense into nanoparticle and composite or "Nano-on-nano" particles. These particles can then be collected for use in a variety of applications. Preferred nanoparticles and "nano-nano" particles are described in U.S. Patent Application Serial No. 13/801,726, the disclosure of which is incorporated herein by reference.

本發明參考粒子及粉末兩者。此等兩個術語係等效的，除一單數「粉末」係指粒子之一集合之外。本發明可應用於各種粉末及粒子。一般技術者應瞭解，術語「奈米粒子」及「奈米大小粒子」一般涵蓋奈米級直徑之一粒子，通常介於約0.5奈米至約500奈米、約1奈米至約500奈米、約1奈米至約100奈米或約1奈米至約50奈米之間。較佳地，奈米粒子具有小於250奈米之一平均晶粒大小及1至1000000之間之一縱橫比。在一些實施例中，奈米粒子具有約50奈米或更小、約30奈米或更小或約20奈米或更小之一平均晶粒大小。在額外實施例中，奈米粒子具有約50奈米或更小、約30奈米或更小或約20奈米或更小之一平均直徑。粒子之縱橫比(其界定為粒子之最長尺寸除以粒子之最短尺寸)較佳地介於1至100之間，更佳地介於1至10之間，更佳地介於1至2之間。使用ASTM(美國材料試驗學會)標準(參閱ASTM E112-10)來量測「晶粒大小」。當計算一粒子之一直徑時，採用其最長尺寸及最短尺寸之平均值；因此，具有20奈米長軸及10奈米短軸之一卵形粒子之直徑將為15奈米。大量粒子之平均直徑為個別粒子之直徑之平均值，且可藉由熟習技術者已知之各種技術而量測。 The invention refers to both particles and powders. These two terms are equivalent except that a singular "powder" refers to a collection of particles. The invention is applicable to various powders and particles. It should be understood by those of ordinary skill that the terms "nanoparticle" and "nanosized particle" generally encompass one particle of the nanometer diameter, usually between about 0.5 nm and about 500 nm, and about 1 nm to about 500 nm. Meters, from about 1 nanometer to about 100 nanometers or between about 1 nanometer and about 50 nanometers. Preferably, the nanoparticles have an average grain size of less than 250 nm and an aspect ratio of between 1 and 1,000,000. In some embodiments, the nanoparticles have an average grain size of about 50 nanometers or less, about 30 nanometers or less, or about 20 nanometers or less. In additional embodiments, the nanoparticles have an average diameter of about 50 nanometers or less, about 30 nanometers or less, or about 20 nanometers or less. The aspect ratio of the particles, which is defined as the longest dimension of the particles divided by the shortest dimension of the particles, is preferably between 1 and 100, more preferably between 1 and 10, more preferably between 1 and 2. between. The "grain size" is measured using the ASTM (American Society for Testing and Materials) standard (see ASTM E112-10). When calculating the diameter of one of the particles, the average of the longest dimension and the shortest dimension is used; therefore, it has a 20 nm long axis and a 10 nm short axis. The diameter of an oval particle will be 15 nm. The average diameter of a plurality of particles is the average of the diameters of the individual particles and can be measured by various techniques known to those skilled in the art.

在額外實施例中，奈米粒子具有約50奈米或更小、約30奈米或更小或約20奈米或更小之一晶粒大小。在額外實施例中，奈米粒子具有約50奈米或更小、約30奈米或更小或約20奈米或更小之一直徑。 In additional embodiments, the nanoparticles have a grain size of about 50 nanometers or less, about 30 nanometers or less, or about 20 nanometers or less. In additional embodiments, the nanoparticles have a diameter of about 50 nanometers or less, about 30 nanometers or less, or about 20 nanometers or less.

藉由結合兩種不同奈米粒子而形成一複合奈米粒子。此結合可發生於一奈米相生產方法之淬火相期間。例如，一觸媒可包含附接至一支撐奈米粒子以形成一「奈米上奈米」複合奈米粒子之一催化奈米粒子。接著，可將多個奈米上奈米粒子結合至一微米大小載體粒子以形成一複合微米/奈米粒子，即，帶有複合奈米粒子之一微米粒子。 A composite nanoparticle is formed by combining two different nanoparticles. This combination can occur during the quenching phase of a nanophase production process. For example, a catalyst can comprise a nanoparticle catalyzed by attaching to a supporting nanoparticle to form a "nano-nano" composite nanoparticle. Next, a plurality of nano-nanoparticles can be bonded to one micron-sized carrier particles to form a composite micro/nanoparticle, i.e., one microparticle with composite nanoparticle.

如圖1中所展示，用於產生奈米粒子之一電漿系統100包含一電漿槍102、一材料輸入供給系統104、流體地連接至一冷卻導管108之一淬火腔室106、及一輸出收集系統110。一工作氣體112流動通過電漿槍102以產生電漿，同時一調節流體114流入至一槍盒116中且接著流入至淬火腔室106中。可使用一真空泵或鼓風機118來將負壓力施加至電漿生產系統之收集端以提供調節流體及材料輸出之定向流。 As shown in FIG. 1, a plasma system 100 for producing nanoparticles includes a plasma gun 102, a material input supply system 104, a quench chamber 106 fluidly coupled to a cooling conduit 108, and a The collection system 110 is output. A working gas 112 flows through the plasma gun 102 to produce a plasma, while a conditioning fluid 114 flows into a gun box 116 and then into the quenching chamber 106. A vacuum pump or blower 118 can be used to apply a negative pressure to the collection end of the plasma production system to provide a directional flow of conditioning fluid and material output.

圖2A繪示可用於粒子生產之一電漿槍之一實施例。一電漿槍200包含一凸形電極202及一凹形電極204，其中一內部腔室形成於凸形電極202與凹形電極204之間。該內部腔室之一端包括一進入區域206且其之一相對端包括一電漿區域208。在一些實施例中，進入區域206具有一圓柱形形狀，同時電漿區域208具有一截頭圓錐形形狀。該內部腔室經組態以具有引入至其進入區域206中且接著流入至電漿區域208中之一工作氣體。在一些實施例中，該工作氣體為一惰性氣體，例如氬氣。在一些實施例中，可將氫氣或其他氣體添加至氬氣以還原奈米粒子氧化。 Figure 2A illustrates one embodiment of a plasma gun that can be used in particle production. A plasma gun 200 includes a convex electrode 202 and a concave electrode 204, wherein an internal chamber is formed between the convex electrode 202 and the concave electrode 204. One end of the internal chamber includes an entry region 206 and one of the opposite ends includes a plasma region 208. In some embodiments, the entry region 206 has a cylindrical shape while the plasma region 208 has a frustoconical shape. The internal chamber is configured to have a working gas introduced into its entry region 206 and then into the plasma region 208. In some embodiments, the working gas is an inert gas such as argon. In some embodiments, hydrogen or other gas may be added to the argon to reduce oxidation of the nanoparticles.

例如，在一些實施例中，工作氣體為具有30：1至3：1之一比率之氬氣與氫氣之一混合物。在一些實施例中，工作氣體為具有20：1比率之氬氣與氫氣之一混合物。在一些實施例中，工作氣體為具有一12：1比率之氬氣與氫氣之一混合物。在一些實施例中，工作氣體為具有一8：1比率之氬氣與氫氣之一混合物。在一些實施例中，工作氣體為具有一5：1比率之氬氣與氫氣之一混合物。一氣體入口210經組態以將工作氣體供應至進入區域206。在基於高產量電漿之粒子生產系統之操作期間，工作氣體流動通過進入區域206，至電漿區域208，且自出口212流出。一電源供應器連接至凸形電極202及凹形電極204，且藉由橫跨電漿區域208中之凸形電極202與凹形電極204之間之間隙傳遞電流而輸送電力通過電漿槍200。橫跨電漿區域208中之間隙之電弧給工作氣體供能且形成自出口212流出之一電漿流。 For example, in some embodiments, the working gas has a ratio of 30:1 to 3:1 A mixture of argon and hydrogen. In some embodiments, the working gas is a mixture of one of argon and hydrogen having a 20:1 ratio. In some embodiments, the working gas is a mixture of argon and hydrogen having a ratio of 12:1. In some embodiments, the working gas is a mixture of argon and hydrogen having an 8:1 ratio. In some embodiments, the working gas is a mixture of argon and hydrogen having a 5:1 ratio. A gas inlet 210 is configured to supply working gas to the inlet region 206. During operation of the high yield plasma based particle production system, the working gas flows through the entry zone 206 to the plasma zone 208 and out of the outlet 212. A power supply is coupled to the convex electrode 202 and the concave electrode 204, and delivers power through the plasma gun 200 by passing current across the gap between the convex electrode 202 and the concave electrode 204 in the plasma region 208. . An arc across the gap in the plasma region 208 energizes the working gas and forms a flow of plasma from the outlet 212.

當自電漿槍排出一汽化材料時，輻射熱可損壞電漿槍之部分。如圖2B至圖2D中所繪示，一冷卻環218可定位於凹形電極204中且圍繞出口212環形安置以防止或減緩所誘發之熱對凹形電極204及其他電漿槍200組件之損壞。可使一冷卻流體(例如水)再循環通過冷卻環218以驅散由電漿在系統之操作期間產生之熱之一部分。一面板220可接合至冷卻環。面板220安置於電漿槍200之外表面上且可用於使凹形電極204保持於適當位置中且密封冷卻環218。在圖2D中，虛線表示由面板220覆蓋之冷卻換218。藉由透過冷卻環入口234進入且透過冷卻環出口236退出而使冷卻流體在整個冷卻環218中循環。可使用一泵來使冷卻流體再循環，或否則可將冷卻流體處理掉。當電漿被產生於電漿區域208中，行進通過凹形電極204內之一圓柱形通道209，且透過出口退出時，可由冷卻流體消除由電漿產生之輻射熱。 When a vaporized material is discharged from the plasma gun, the radiant heat can damage portions of the plasma gun. As shown in Figures 2B-2D, a cooling ring 218 can be positioned in the concave electrode 204 and annularly disposed about the outlet 212 to prevent or slow the induced heat to the concave electrode 204 and other plasma gun 200 components. damage. A cooling fluid (e.g., water) can be recirculated through the cooling ring 218 to dissipate a portion of the heat generated by the plasma during operation of the system. A panel 220 can be coupled to the cooling ring. The panel 220 is disposed on the outer surface of the plasma gun 200 and can be used to hold the concave electrode 204 in place and seal the cooling ring 218. In FIG. 2D, the dashed line indicates the cooling change 218 covered by the panel 220. The cooling fluid circulates throughout the cooling ring 218 by entering through the cooling ring inlet 234 and exiting through the cooling ring outlet 236. A pump can be used to recirculate the cooling fluid, or the cooling fluid can otherwise be disposed of. When the plasma is generated in the plasma region 208, travels through one of the cylindrical passages 209 in the concave electrode 204, and exits through the outlet, the radiant heat generated by the plasma can be removed by the cooling fluid.

一材料注射口214可安置於凹形電極204上以將一材料供給通道216連結至圓柱形通道209。供給材料可透過材料供給通道216供給至圓柱形通道209中且在自出口212流出且流入至淬火腔室之前由電漿汽化。粒子成核及表面生長發生於圓柱形通道209內以即時進行能量輸送，且粒子繼續在淬火腔室內進行大小生長。粒子在由一收集系統收集之前於淬火腔室及冷卻導管內冷卻。在粒子收集之後，調節流體一般被排放至周圍環境中或否則被處理掉。 A material injection port 214 can be disposed on the concave electrode 204 to join a material supply passage 216 to the cylindrical passage 209. The feed material can be supplied to the cylindrical passage 209 through the material supply passage 216 and from the plasma vapor before flowing out of the outlet 212 and flowing into the quenching chamber Chemical. Particle nucleation and surface growth occur in the cylindrical channel 209 for immediate energy transfer, and the particles continue to grow in size within the quenching chamber. The particles are cooled in the quenching chamber and cooling conduit prior to collection by a collection system. After particle collection, the conditioning fluid is typically vented to the surrounding environment or otherwise disposed of.

為實現奈米粒子之具成本效應的大規模生產，奈米粒子生產系統之高材料產量及連續操作係較佳的。基於電漿之先前奈米粒子生產系統困擾於由清掃阻塞通道且替換磨損部件所致之頻繁關閉。例如，電漿槍之熱將頻繁地引起供給材料熔融且阻塞僅可在關閉系統時疏通之材料供給通道。電漿槍電極在操作期間受坑蝕，且需要關閉系統以替換此等部件。電漿槍面板可在連續操作期間熔融以引起冷卻流體自冷卻環洩漏，其可導致關閉系統以替換面板。粒子將沿冷卻導管之壁累積，且將需要關閉系統以清潔冷卻導管。此外，奈米粒子大小不一致且因系統壓力及材料流速之變動而難以控制。例如，若淬火腔室內之壓力下降至低於周圍壓力，則雜質可洩漏至系統中且使所產生之奈米粒子之品質降級。另外，淬火腔室中之不受控冷卻及材料流速導致大小不一致之粒子。另一關注在於：對於大規模生產，廢棄調節流體之處理不具成本效益。此等困難阻礙由基於電漿之奈米粒子生產系統生產之粒子之平均產量速度、成本效益及一致性。 In order to achieve cost-effective large-scale production of nanoparticles, the high material yield and continuous operating system of the nanoparticle production system are preferred. Previous plasma particle production systems based on plasma plagued frequent closures caused by cleaning the blocked passages and replacing worn parts. For example, the heat of the plasma gun will frequently cause the feed material to melt and block the material supply passage that can only be unblocked when the system is shut down. The plasma gun electrodes are pitted during operation and the system needs to be shut down to replace these components. The plasma gun panel can be melted during continuous operation to cause leakage of cooling fluid from the cooling ring, which can result in shutting down the system to replace the panel. The particles will accumulate along the walls of the cooling duct and will require shutting down the system to clean the cooling duct. In addition, the size of the nanoparticles is inconsistent and difficult to control due to changes in system pressure and material flow rate. For example, if the pressure within the quenching chamber drops below ambient pressure, impurities can leak into the system and degrade the quality of the resulting nanoparticle. In addition, uncontrolled cooling and material flow rates in the quenching chamber result in particles of inconsistent size. Another concern is that for large-scale production, the disposal of waste conditioning fluids is not cost effective. These difficulties hinder the average production speed, cost effectiveness and consistency of the particles produced by the plasma-based nanoparticle production system.

所描述之系統、裝置及方法減少系統中斷，生產更高容積且更一致之產量，且使用一高產量粒子生產系統來產生更一致奈米粒子。此等高產量系統、裝置及方法藉由減少系統內之阻滯及變動而產生連續且一致之流。一高產量粒子生產系統可保持操作至少6個小時、至少12個小時、至少24個小時、至少48個小時、至少72個小時(3天)、至少336個小時(14天)、至少672個小時(28天)或至少1344個小時(56天)，其具有每分鐘至少9克、較佳地每分鐘30克及更佳地每分鐘60克之一材料產量。 The described systems, devices, and methods reduce system interruptions, produce higher volume and more consistent throughput, and use a high throughput particle production system to produce more consistent nanoparticle. These high throughput systems, devices, and methods produce a continuous and consistent flow by reducing blockages and variations within the system. A high-yield particle production system can operate for at least 6 hours, at least 12 hours, at least 24 hours, at least 48 hours, at least 72 hours (3 days), at least 336 hours (14 days), at least 672 Hours (28 days) or at least 1344 hours (56 days) having a material yield of at least 9 grams per minute, preferably 30 grams per minute and more preferably 60 grams per minute.

粒子生產系統產量依靠恆定材料流。緩慢或不一致材料流引起一系統堵塞，其導致一不均勻的粒子大小分佈。所描述之系統、裝置及方法提供：使用連續輸入供給材料流之一有效率的高產量粒子生產系統之連續操作、避免對電漿槍電極之顯著磨損、快速冷卻淬火腔室中之粒子之一受控方法、避免新形成之奈米粒子附著至冷卻導管之壁的一機構、相對於周圍壓力之恆定但最小系統超壓、及/或所使用之調節流體之再循環。 Particle production system production relies on constant material flow. Slow or inconsistent material flow causes a system blockage that results in an uneven particle size distribution. The described systems, devices, and methods provide for continuous operation of an efficient high throughput particle production system using one of the continuous input feed streams, avoiding significant wear on the plasma gun electrodes, and rapidly cooling one of the particles in the quenching chamber. A controlled method, a mechanism that avoids the adhesion of newly formed nanoparticles to the wall of the cooling conduit, a constant relative to ambient pressure but minimal system overpressure, and/or recirculation of the conditioning fluid used.

電漿槍面板之磨損之減少Reduction of wear of the plasma gun panel

一基於電漿之典型奈米粒子生產系統之持續操作可導致電漿槍面板之熔融及變形，且可能需要關閉系統以替換電漿槍面板。當電漿槍處於操作中時，熱汽化材料及新產生之奈米粒子透過電漿槍出口排出且進入淬火腔室。當粒子通過電漿槍出口時，大量熱被驅散至面板，其可引起面板熔融及/或變形。由於面板之適當形狀用於形成或密封冷卻環，所以面板之變形可導致冷卻流體之洩漏。由於冷卻環用於控制系統之溫度，所以面板之任何熔融或變形可導致系統關閉及生產力損失。 The continued operation of a typical nanoparticle production system based on plasma can result in melting and deformation of the plasma gun panel and may require shutting down the system to replace the plasma gun panel. When the plasma gun is in operation, the thermally vaporized material and the newly produced nanoparticles are discharged through the outlet of the plasma gun and into the quenching chamber. As the particles exit through the plasma gun, a significant amount of heat is dissipated to the panel, which can cause the panel to melt and/or deform. Since the proper shape of the panel is used to form or seal the cooling ring, deformation of the panel can result in leakage of the cooling fluid. Since the cooling ring is used to control the temperature of the system, any melting or deformation of the panel can result in system shutdown and loss of productivity.

吾人已發現，增大面板開口之直徑使得面板於熱電漿槍蒸汽出口之曝露被最小化防止面板之熔融及變形。接著，可用獨立於面板之一耐熱材料密封冷卻環。在電漿槍之超過24個小時、超過48個小時、超過72個小時、超過160個小時、超過336個小時、超過672個小時或超過1344個小時之連續操作期間，較佳地使面板之溫度保持低於900℃、低於450℃或低於100℃。圖2E至圖2F繪示經修改之電漿槍面板230及經獨立密封之冷卻環218之一實施例。經修改之電漿槍面板230經安置使得其可使凹形電極204保持於正確位置中，但其與電漿槍出口212之接近度未使其在連續系統操作期間熔融或變形。使用一耐熱插塞232來密封經獨立密封之冷卻環218。該耐熱柱塞可由任何耐熱材料(例如不鏽鋼、鈦、陶瓷或類似物)製成。 It has been found that increasing the diameter of the panel opening minimizes exposure of the panel to the steam outlet of the hot plasma gun to prevent melting and deformation of the panel. Next, the cooling ring can be sealed with a heat resistant material that is independent of one of the panels. Preferably, the panel is operated during a continuous operation of the plasma gun for more than 24 hours, more than 48 hours, more than 72 hours, more than 160 hours, more than 336 hours, more than 672 hours, or more than 1344 hours. The temperature is maintained below 900 ° C, below 450 ° C or below 100 ° C. 2E-2F illustrate one embodiment of a modified plasma gun panel 230 and a separately sealed cooling ring 218. The modified plasma gun panel 230 is positioned such that it holds the concave electrode 204 in the correct position, but its proximity to the plasma gun outlet 212 does not cause it to melt or deform during continuous system operation. A heat resistant plug 232 is used to seal the independently sealed cooling ring 218. The heat resistant plunger can be made of any heat resistant Made of materials such as stainless steel, titanium, ceramic or the like.

高產量粒子生產系統之此組態導致無法頻繁替換電漿槍面板且容許連續使用高產量粒子生產系統。所描述之系統容許粒子生產系統在無需替換面板之情況下依每分鐘至少9克、每分鐘至少30克或每分鐘至少60克之一流速連續操作至少6個小時、至少12個小時、至少24個小時、至少48個小時、至少72個小時(3天)、至少336個小時(14天)、至少672個小時(28天)或至少1344個小時(56天)。 This configuration of the high-yield particle production system results in the inability to frequently replace the plasma gun panel and allows continuous use of high-yield particle production systems. The described system allows the particle production system to operate continuously for at least 6 hours, at least 12 hours, at least 24 cycles at a flow rate of at least 9 grams per minute, at least 30 grams per minute, or at least 60 grams per minute without the need to replace the panel. Hours, at least 48 hours, at least 72 hours (3 days), at least 336 hours (14 days), at least 672 hours (28 days), or at least 1344 hours (56 days).

連續材料供給系統Continuous material supply system

在一奈米粒子生產系統中，經由一材料供給通道將可呈粉末形式、丸粒形式、桿形式或其他形式之輸入材料供給至電漿槍中之電漿通道附近。進入電漿通道之材料由電漿流汽化且被排入至淬火腔室中。然而，在使用一電漿槍之大多數粒子生產系統中，在粉末粒子到達電漿通道之前，電漿之熱熔融供給至電漿槍中之粉末粒子。吾人已發現，熔融或部分熔融之供給材料導致供給材料之凝結及材料供給通道之阻塞。因此，必須停止電漿槍之操作，直至其被清潔，此導致生產力之損失且無法長時間連續運行系統。 In a nanoparticle production system, input material, which may be in powder form, pellet form, rod form or other form, is supplied to the vicinity of the plasma passage in the plasma gun via a material supply passage. The material entering the plasma passage is vaporized by the plasma stream and discharged into the quenching chamber. However, in most particle production systems using a plasma gun, the hot melt of the plasma is supplied to the powder particles in the plasma gun before the powder particles reach the plasma passage. It has been found that the molten or partially melted feed material causes condensation of the feed material and blockage of the material supply passage. Therefore, the operation of the plasma gun must be stopped until it is cleaned, which results in loss of productivity and the inability to continuously operate the system for a long time.

在一高產量系統中，使用一連續材料供給系統來將材料之一恆定流供給至電漿通道中以容許連續系統操作以避免輸入供給流動之中斷。所描述之系統提供一器件，其自動清除供給通道中之任何供給材料或容許在不中斷電漿槍之連續操作之情況下清潔供給通道。在一實施例中，可藉由採用可在操作中被交替清潔或使用之交替材料注射口而防止或減少歸因於供給通道中之供給材料之熔融的至電漿槍中之輸入供給材料流之中斷。另外或替代地，一往復柱塞器件可附接至電漿槍以推動輸入供給材料通過材料注射口而進入電漿槍以避免大量供給材料凝結及供給通道阻塞。另外或替代地，一脈衝空氣射流系統可用於噴丸清除至材料供給系統中之流體以清除材料且防止通道阻塞。 In a high throughput system, a continuous material supply system is used to supply a constant flow of material to the plasma passage to allow continuous system operation to avoid interruption of the input supply flow. The described system provides a means that automatically purges any supply material in the supply passage or allows the supply passage to be cleaned without interrupting the continuous operation of the plasma gun. In one embodiment, the input supply material stream to the plasma gun due to the melting of the feed material in the feed channel can be prevented or reduced by employing alternate material injection ports that can be alternately cleaned or used in operation. Interrupted. Additionally or alternatively, a reciprocating plunger device can be attached to the plasma gun to push the input feed material through the material injection port into the plasma gun to avoid condensation of the bulk supply material and blockage of the supply passage. Additionally or alternatively, a pulsed air jet system can be used to blast the fluid into the material supply system to remove material and prevent channel blockage.

圖3A至圖3C繪示連續材料供給系統之一些實施例。如圖3A至圖3C中所繪示，電漿槍300包含經組態以將供給材料引入至電漿區域308內之一位置處之內部腔室中之一或多個材料注射口314。一或多個材料供應通道316可提供於凹形電極304中以將一材料供應器318連接至一材料注射口314。在一些實施例中，多個材料注射口314及多個材料供應通道316圍繞內部腔室安置於一環形形成物中。在一些實施例中，使用一單一材料注射口314及一單一材料供應通道316。在一些實施例中，使用兩個或兩個以上材料注射口314及兩個或兩個以上材料供應通道316。在一些實施例中，材料注射口314及材料供應通道316經組態以將供給材料引入至一位置處之內部腔室中，該位置經安置以更接近於將工作氣體引入至進入區域306中之所在位置而非形成電漿流之所在位置。在一些實施例中，材料注射口314及材料供應通道316經組態以將供給材料引入至經安置以更接近於一電漿槍出口312之一位置處之內部腔室中。在一連續材料供給系統中，材料注射口314之直徑可在自約1毫米至約20毫米之範圍內。較寬材料注射口314具有比較窄材料注射口小之一阻塞頻率。較佳地，材料注射口314之最小直徑為至少3毫米以容許連續材料流及連續系統操作。 3A-3C illustrate some embodiments of a continuous material supply system. As shown in FIGS. 3A-3C, the plasma gun 300 includes one or more material injection ports 314 configured to introduce a feed material into an interior chamber at one location within the plasma region 308. One or more material supply channels 316 may be provided in the concave electrode 304 to connect a material supply 318 to a material injection port 314. In some embodiments, a plurality of material injection ports 314 and a plurality of material supply channels 316 are disposed in an annular formation around the interior chamber. In some embodiments, a single material injection port 314 and a single material supply channel 316 are used. In some embodiments, two or more material injection ports 314 and two or more material supply channels 316 are used. In some embodiments, material injection port 314 and material supply channel 316 are configured to introduce a supply material into an interior chamber at a location that is positioned to more closely introduce a working gas into entry region 306 The location is not where the plasma flow is formed. In some embodiments, material injection port 314 and material supply channel 316 are configured to introduce a supply material into an interior chamber that is positioned closer to one of the plasma gun outlets 312. In a continuous material supply system, the diameter of the material injection port 314 can range from about 1 mm to about 20 mm. The wider material injection port 314 has a smaller blocking frequency than the narrower material injection port. Preferably, the material injection port 314 has a minimum diameter of at least 3 mm to permit continuous material flow and continuous system operation.

圖3A繪示使用交替材料注射口之連續材料供給系統之一實施例。此等實施例包含兩個或兩個以上材料注射口314及兩個或兩個以上材料供應通道316。將材料供應器318連接至材料注射口314之一可移除材料供應管320安置於各材料供應通道316內。視情況而定，可使用一螺紋連接器或夾緊機構來將可移除材料供應管320暫時固定於適當位置中。在高產量粒子生產系統之操作期間，一或多個材料供應通道316可在作用中且一或多個材料供應通道316可不在作用中。當一材料供應通道316不在作用中時，無供給材料流動通過該材料供應通道316而進入電漿槍。當一材料供應通道316係在作用中時，供給材料自材料供應器318流動通過可移除材料供應管320及材料供應通道316，流出材料注射口314，且進入電漿槍。在高產量粒子生產系統之持續使用期間，熱電漿之輻射熱可引起供給材料部分熔融以引起供給材料之凝結及可移除材料供應管320之阻塞。當偵測到可移除材料供應管320開始阻塞時，非作用中之材料供應通道316可變為啟動且作用中之材料供應通道316可變為未啟動。當材料供應通道316不在作用中時，可移除材料供應管320可自材料供應通道316被移除，且被疏通、清潔或替換。接著，可移除材料供應管320可被重新裝配至材料供應通道316中且在需要或否則期望時被啟動。材料供應通道316之啟動狀態之此切換確保在高產量粒子生產系統之操作期間至少一材料供應通道316保持處於作用中狀態，且確保連續材料供給流。 Figure 3A illustrates an embodiment of a continuous material supply system using alternating material injection ports. These embodiments include two or more material injection ports 314 and two or more material supply channels 316. A material supply 318 is coupled to one of the material injection ports 314. The removable material supply tube 320 is disposed within each material supply passage 316. Optionally, a threaded connector or clamping mechanism can be used to temporarily secure the removable material supply tube 320 in place. During operation of the high throughput particle production system, one or more material supply channels 316 may be active and one or more material supply channels 316 may be inactive. When a material supply passage 316 is not active, no supply material flows through the material supply passage 316 into the plasma gun. When a material supply channel 316 is in action, the material is supplied Material supply 318 flows through removable material supply tube 320 and material supply channel 316, out of material injection port 314, and into the plasma gun. During continued use of the high throughput particle production system, the radiant heat of the hot plasma can cause the feed material to partially melt to cause condensation of the feed material and clogging of the removable material supply tube 320. When it is detected that the removable material supply tube 320 begins to block, the inactive material supply channel 316 can become active and the active material supply channel 316 can become unactivated. When the material supply passage 316 is not in effect, the removable material supply tube 320 can be removed from the material supply passage 316 and dredged, cleaned, or replaced. Next, the removable material supply tube 320 can be reassembled into the material supply channel 316 and activated when needed or otherwise desired. This switching of the activation state of the material supply passage 316 ensures that at least one material supply passage 316 remains in an active state during operation of the high throughput particle production system and that a continuous material supply flow is ensured.

圖3B繪示使用一往復柱塞器件322之連續材料供給系統之一實施例。往復柱塞器件322包含一柱塞324、一柱塞外殼326及一控制機構。柱塞324經安置使得柱塞324在處於延伸位置中時延伸穿過材料供應通道316，如圖3B中所繪示。柱塞324亦可縮回至柱塞外殼326中，如由該控制機構所控制。該控制機構可為容許柱塞324在一延伸位置與一縮回位置之間往復之任何機構。在一些實施例中，該控制機構可為一曲柄軸或液壓控制系統。在圖3B所繪示之實施例中，該控制機構為藉由將氣體自一氣體源330施加至一4通直接作用電磁閥332而啟動之一氣動活塞328。直接作用彈簧回位電磁閥332將氣體交替施加至柱塞外殼326之頂部及底部，藉此啟動活塞328且容許柱塞324往復。在一些實施例中，所使用之氣體為氬氣。在一些實施例中，柱塞依每秒至少2次、更佳地每秒至少6次或每秒至少8次之一速率往復。在一些實施例中，柱塞係陶瓷的以避免歸因於附近電漿之熱的衰變及污染。在其他實施例中，柱塞由鎢製成或襯有鎢。 FIG. 3B illustrates an embodiment of a continuous material supply system using a reciprocating plunger device 322. The reciprocating plunger device 322 includes a plunger 324, a plunger housing 326, and a control mechanism. The plunger 324 is positioned such that the plunger 324 extends through the material supply passage 316 while in the extended position, as depicted in Figure 3B. The plunger 324 can also be retracted into the plunger housing 326 as controlled by the control mechanism. The control mechanism can be any mechanism that allows the plunger 324 to reciprocate between an extended position and a retracted position. In some embodiments, the control mechanism can be a crankshaft or hydraulic control system. In the embodiment illustrated in FIG. 3B, the control mechanism activates one of the pneumatic pistons 328 by applying a gas from a gas source 330 to a 4-way direct acting solenoid valve 332. The direct acting spring return solenoid valve 332 alternately applies gas to the top and bottom of the plunger housing 326, thereby activating the piston 328 and allowing the plunger 324 to reciprocate. In some embodiments, the gas used is argon. In some embodiments, the plunger reciprocates at a rate of at least 2 times per second, more preferably at least 6 times per second, or at least 8 times per second. In some embodiments, the plunger is ceramic to avoid decay and contamination due to heat from nearby plasma. In other embodiments, the plunger is made of tungsten or lined with tungsten.

在粒子生產系統之操作期間，當柱塞324處於縮回位置中時，容許供給材料自材料供應器318流出且通過一柱塞頭334。往復柱塞控制機構使柱塞324延伸穿過材料供應通道316終端以經由材料注射口314將粉末輸送至內部腔室。使柱塞324***穿過材料供應通道316減緩由供給材料之凝結引起之材料供應通道316及材料注射口314之阻塞。接著，柱塞324往復至初始縮回位置以重新開始循環。在柱塞324往復至其初始縮回位置之後，供給材料可再次自材料供應器318流動通過柱塞頭334。柱塞324可每隔一定時間間隔重複此運動以容許供給材料之一恆定流進入電漿槍300之內部腔室。 During operation of the particle production system, when the plunger 324 is in the retracted position, the volume The supply material flows from the material supply 318 and through a plunger head 334. The reciprocating plunger control mechanism extends the plunger 324 through the end of the material supply passage 316 to deliver the powder to the internal chamber via the material injection port 314. Inserting the plunger 324 through the material supply passage 316 slows the blockage of the material supply passage 316 and the material injection port 314 caused by the condensation of the supply material. Next, the plunger 324 reciprocates to the initial retracted position to resume the cycle. After the plunger 324 reciprocates to its initial retracted position, the feed material can again flow from the material supply 318 through the plunger head 334. The plunger 324 can repeat this movement at regular intervals to allow a constant flow of one of the feed materials into the internal chamber of the plasma gun 300.

圖3C繪示使用一脈衝氣體射流系統334之連續材料供給系統之一實施例。在一脈衝氣體射流系統334中，一氣體射流336安置於朝向注射供應口314導引之材料供應通道316內。一氣體供應器338將一氣體(較佳為氬氣)供應至氣體射流336。該氣流可由一2通直接作用電磁閥340控制以容許將脈衝氣體自氣體射流336釋放至材料供應通道316中。一壓力調節器342及一壓力釋放閥344可安置於氣體供應器338與2通直接作用電磁閥340之間以調節釋放氣體之壓力。高壓脈衝氣體可清除材料供應通道316中之任何凝結供給材料以防止在高產量粒子生產系統之操作期間發生阻塞。 FIG. 3C illustrates an embodiment of a continuous material supply system using a pulsed gas jet system 334. In a pulsed gas jet system 334, a gas jet 336 is disposed within a material supply passage 316 that is directed toward the injection supply port 314. A gas supply 338 supplies a gas, preferably argon, to the gas jet 336. The gas flow can be controlled by a 2-way direct acting solenoid valve 340 to permit release of pulsed gas from the gas jet 336 into the material supply passage 316. A pressure regulator 342 and a pressure relief valve 344 can be disposed between the gas supply 338 and the 2-way direct acting solenoid valve 340 to regulate the pressure of the released gas. The high pressure pulsed gas can purge any condensed feed material in the material supply passage 316 to prevent clogging during operation of the high throughput particle production system.

將一連續材料供給系統提供至一奈米粒子生產系統確保：無需關閉該系統來清除阻塞材料供應通道之凝結供給材料。此容許供給材料連續流入至一高產量粒子生產系統中以容許持續系統操作及產量。所描述之系統容許粒子生產系統依每分鐘至少9克、每分鐘至少30克或每分鐘至少60克之供給材料之一流速連續操作至少6個小時、至少12個小時、至少24個小時、至少48個小時、至少72個小時(3天)、至少336個小時(14天)、至少672個小時(28天)或至少1344個小時(56天)。 Providing a continuous material supply system to the one nanoparticle production system ensures that the system does not need to be shut down to remove the condensed feed material from the clogging material supply passage. This allows the feed material to continuously flow into a high throughput particle production system to allow for continued system operation and throughput. The described system allows the particle production system to operate continuously for at least 6 hours, at least 12 hours, at least 24 hours, at least 48 at a flow rate of at least 9 grams per minute, at least 30 grams per minute, or at least 60 grams per minute. Hours, at least 72 hours (3 days), at least 336 hours (14 days), at least 672 hours (28 days) or at least 1344 hours (56 days).

電漿槍電極之不均勻磨損之減少Reduction of uneven wear of the electrode of the plasma gun

吾人已發現，一基於電漿之典型奈米粒子生產系統之持續操作導致電漿槍電極之過度坑蝕及磨蝕以需要關閉系統來替換此等磨損部件。當電漿槍處於操作中時，工作氣體被引入至一進入區域中且繼續流動通過形成於凸形電極與凹形電極之間之電漿通道。施加至凸形電極與凹形電極之間之工作氣體之一電流給至一電漿流中之氣體供能以導致一穩定電漿弧形成於該等電極之間。由該穩定電漿弧引起之不均勻熱分佈引起電漿槍電極之不均勻磨損。特定言之，該等電極在操作期間變為受坑蝕。不均勻電極坑蝕及磨損導致電漿區域內之工作氣體之不一致流，此係因為工作氣體之某一部分變為受困於電極凹坑或其他磨損中或因電極凹坑或其他磨損而減速且無法均勻地流動通過電漿通道。粒子形成期間之不一致流係非所要的，此係因為其導致不受控且不均勻之粒子聚結。因此，不均勻坑蝕導致電極之替換，其需要關閉系統且必然使生產力受損。 It has been found that the continued operation of a typical nanoparticle production system based on plasma results in excessive pitting and abrasion of the plasma gun electrodes to require the system to be closed to replace such wear parts. When the plasma gun is in operation, the working gas is introduced into an entry region and continues to flow through the plasma passage formed between the male electrode and the female electrode. A current applied to the working gas between the convex electrode and the concave electrode energizes the gas in a plasma stream to cause a stable plasma arc to form between the electrodes. The uneven heat distribution caused by the stable plasma arc causes uneven wear of the electrode of the plasma gun. In particular, the electrodes become pitted during operation. Non-uniform electrode pitting and wear lead to inconsistent flow of working gas in the plasma region because some portion of the working gas becomes trapped in electrode pits or other wear or decelerates due to electrode pits or other wear and It is not possible to flow evenly through the plasma channel. Inconsistent flow during particle formation is undesirable because it causes uncontrolled and uneven particle coalescence. Therefore, uneven pitting leads to the replacement of the electrodes, which requires shutting down the system and necessarily impairing productivity.

吾人已發現，可藉由橫跨電極施加一非線性整體流方向(較佳為一實質上渦旋流)之工作氣體而避免或減緩電漿槍電極之不均勻磨損。工作氣體之實質上渦旋流藉由均勻地分佈工作氣體而防止一穩定電漿弧。此亦防止電極之坑蝕及所導致之系統操作中斷以容許連續使用高產量粒子生產系統。在一實施例中，放置於電漿槍內之電漿區域之前之一工作氣體注射環可提供所需渦流。該工作氣體注射環較佳地含有圍繞凸形電極環形定位之一或多個口以產生均勻氣流分佈。 It has been found that the uneven wear of the electrodes of the plasma gun can be avoided or mitigated by applying a non-linear flow direction (preferably a substantially vortex flow) of working gas across the electrodes. The substantially vortex flow of the working gas prevents a stable plasma arc by uniformly distributing the working gas. This also prevents pit erosion of the electrodes and resulting system operation interruptions to permit continuous use of high throughput particle production systems. In one embodiment, one of the working gas injection rings placed before the plasma region within the plasma gun provides the desired eddy current. The working gas injection ring preferably includes one or more ports positioned annularly around the convex electrode to create a uniform airflow distribution.

圖3A、圖3B及圖3C各繪示具有一工作氣體注射環346之一電漿槍300。工作氣體注射環346安置於由凸形電極302及凹形電極304形成之一通道中以使進入區域306與一充氣腔室348分離。較佳地，充氣腔室348自一氣體入口310接受工作氣體且透過一注射環346將該工作氣體供應至通道之進入區域306。較佳地，依比進入區域306中之壓力高之充氣腔室348中之一壓力供應工作氣體以避免回流通過工作氣體注射環346。在一些實施例中，注射環346係陶瓷的。較佳地，注射環346包括透過其將工作氣體供應至進入區域306之一或多個注射口350。在一些實施例中，多個注射口350圍繞凸形電極302安置於一環形形成物中且較佳地被均勻地間隔開。在一實施例中，注射口350經組態以將工作氣體供應至進入區域306且最終至電漿區域308以呈一實質上渦旋型樣。在一些實施例中，注射口350朝向凸形電極302成角度以誘發該實質上渦旋型樣。在一些實施例中，注射口350遠離凸形電極302成角度以誘發該實質上渦旋型樣。為確保氣體自所有噴嘴流出，充氣腔室348中之壓力高於充氣腔室348及氣體注射環346之下游壓力。由於工作氣體歸因於注射環346之放置而實質上渦旋成一螺旋型樣，所以電漿區域308中所產生之電漿弧來回移動至凸形電極302及凹形電極304上之各種位置，藉此實質上避免凸形電極302及凹形電極304之坑蝕或不均勻磨損。 3A, 3B, and 3C each illustrate a plasma gun 300 having a working gas injection ring 346. The working gas injection ring 346 is disposed in one of the channels formed by the convex electrode 302 and the concave electrode 304 to separate the entry region 306 from an inflation chamber 348. Preferably, the plenum chamber 348 receives working gas from a gas inlet 310 and supplies the working gas to the inlet region 306 of the passage through an injection ring 346. Preferably, one of the pressure chambers 348 having a higher pressure in the inlet region 306 supplies a working gas to avoid backflow through the working gas injection. Ring 346. In some embodiments, the injection ring 346 is ceramic. Preferably, the injection ring 346 includes one or more injection ports 350 through which the working gas is supplied to the entry region 306. In some embodiments, a plurality of injection ports 350 are disposed about an annular electrode 302 in an annular formation and are preferably evenly spaced apart. In an embodiment, the injection port 350 is configured to supply a working gas to the entry region 306 and ultimately to the plasma region 308 to assume a substantially vortex pattern. In some embodiments, the injection port 350 is angled toward the convex electrode 302 to induce the substantially vortex pattern. In some embodiments, the injection port 350 is angled away from the convex electrode 302 to induce the substantially vortex pattern. To ensure that gas flows from all of the nozzles, the pressure in the plenum chamber 348 is higher than the pressure downstream of the plenum chamber 348 and the gas injection ring 346. Since the working gas is substantially vortexed into a spiral pattern due to the placement of the injection ring 346, the plasma arc generated in the plasma region 308 moves back and forth to various positions on the convex electrode 302 and the concave electrode 304. Thereby, pit erosion or uneven wear of the convex electrode 302 and the concave electrode 304 is substantially avoided.

亦可藉由利用一耐熱導電金屬來生產凸形電極302或凹形電極304而減少電極磨損。替代地，凸形電極302或凹形電極304之全部或部分可襯有一耐熱導電金屬，諸如鎢、鈮、鉬、鉭或錸。在一些實施例中，該耐熱導電金屬為鎢。凸形電極302及凹形電極304無需由相同耐熱導電材料製成或無需襯有相同耐熱導電材料。在一些實施例中，僅凸形電極302襯有一耐熱導電金屬。在另一實施例中，僅凹形電極304襯有一耐熱導電金屬。在一些實施例中，僅沿凹形電極304之圓柱形通道309襯有一耐熱導電金屬。相較於更頻繁地用於電漿槍電極中之導電金屬(諸如黃銅或銅)，耐熱導電金屬容許電極在一更長時間段內經受由電漿產生之高溫，藉此減少磨損。 Electrode wear can also be reduced by using a heat resistant conductive metal to produce the convex electrode 302 or the concave electrode 304. Alternatively, all or part of the convex electrode 302 or the concave electrode 304 may be lined with a heat resistant conductive metal such as tungsten, tantalum, molybdenum, niobium or tantalum. In some embodiments, the heat resistant conductive metal is tungsten. The convex electrode 302 and the concave electrode 304 need not be made of the same heat resistant conductive material or need to be lined with the same heat resistant conductive material. In some embodiments, only the convex electrode 302 is lined with a heat resistant conductive metal. In another embodiment, only the concave electrode 304 is lined with a heat resistant conductive metal. In some embodiments, only the cylindrical passage 309 along the concave electrode 304 is lined with a heat resistant conductive metal. The heat resistant conductive metal allows the electrode to withstand the high temperatures generated by the plasma for a longer period of time than the conductive metal (such as brass or copper) used more frequently in the electrode of the plasma gun, thereby reducing wear.

高產量粒子生產系統之此組態導致無需頻繁地替換電漿槍電極且容許連續使用高產量粒子生產系統。所描述之系統容許粒子生產系統在無需替換電極之情況下依每分鐘至少9克、每分鐘至少30克或每分鐘至少60克之一流速連續操作至少6個小時、至少12個小時、至少24個小時、至少48個小時、至少72個小時(3天)、至少336個小時(14天)、至少672個小時(28天)或至少1344個小時(56天)。 This configuration of the high throughput particle production system results in the need to replace the plasma gun electrodes frequently and allows continuous use of high throughput particle production systems. The described system allows the particle production system to be at least 9 grams per minute, at least 30 grams per minute, or per minute without the need for a replacement electrode. Flow rate of at least 60 grams per minute for at least 6 hours, at least 12 hours, at least 24 hours, at least 48 hours, at least 72 hours (3 days), at least 336 hours (14 days), at least 672 hours (28 days) or at least 1344 hours (56 days).

透過增加駐留時間之窄粒子大小分佈Narrow particle size distribution by increasing dwell time

在電漿槍之圓柱形通道309內之能量輸送及材料汽化之後，即時發生粒子成核及表面生長。粒子連續凝結及聚結之駐留時間繼續形成汽化之後之時間，直至粒子被排入至淬火腔室中且被充分冷卻。一較長駐留時間導致一較窄粒子大小分佈，其係生產奈米粒子時所要的。可藉由減小通過電漿槍之工作氣體流速而增加駐留時間，但此將導致總材料產量減少，其係一高產量奈米粒子生產系統非所要的。 Particle nucleation and surface growth occur immediately after energy transfer and vaporization of the material in the cylindrical passage 309 of the plasma gun. The residence time of continuous coagulation and coalescence of the particles continues to form a time after vaporization until the particles are discharged into the quenching chamber and are sufficiently cooled. A longer residence time results in a narrower particle size distribution that is desirable for the production of nanoparticles. The residence time can be increased by reducing the flow rate of the working gas through the plasma gun, but this will result in a reduction in total material production, which is undesirable for a high yield nanoparticle production system.

吾人已發現，加寬凹形電極304內之圓柱形通道309可在不影響總材料產量之情況下充分增加粒子形成期間之駐留時間以生產具有一窄粒子分佈之奈米粒子。在一些實施例中，圓柱形通道309之直徑為自約3毫米至約20毫米。較佳地，圓柱形通道309之直徑為至少4毫米。粒子於電漿槍中之平均駐留時間為至少3毫秒、至少10毫秒或至少40毫秒。 It has been found that widening the cylindrical passage 309 in the concave electrode 304 can substantially increase the residence time during particle formation to produce nanoparticle having a narrow particle distribution without affecting the total material yield. In some embodiments, the cylindrical passage 309 has a diameter of from about 3 mm to about 20 mm. Preferably, the cylindrical passage 309 has a diameter of at least 4 mm. The average residence time of the particles in the plasma gun is at least 3 milliseconds, at least 10 milliseconds, or at least 40 milliseconds.

所描述之系統容許粒子生產系統依每分鐘至少9克、每分鐘至少30克或每分鐘至少60克之一流速連續操作至少6個小時、至少12個小時、至少24個小時、至少48個小時、至少72個小時(3天)、至少336個小時(14天)、至少672個小時(28天)或至少1344個小時(56天)，同時生產具有一足夠窄之大小分佈之奈米粒子。 The described system allows the particle production system to operate continuously for at least 6 hours, at least 12 hours, at least 24 hours, at least 48 hours, at least 9 grams per minute, at least 30 grams per minute, or at least one flow rate of at least 60 grams per minute. At least 72 hours (3 days), at least 336 hours (14 days), at least 672 hours (28 days), or at least 1344 hours (56 days), while producing nanoparticle having a sufficiently narrow size distribution.

超紊流淬火腔室Super turbulent quenching chamber

在將粒子自電漿槍射入至淬火腔室之後，粒子在冷卻程序期間歸因於汽化材料之凝結及聚結而繼續生長。此冷卻程序發生於淬火腔室內。在一些例項中，使一反應混合物在一過長時間內維持處於一過高溫度可導致最後產品中之過度凝結粒子。冷卻新形成之奈米粒子之典型方法包含：在一截頭圓錐形淬火腔室中將熱反應混合物與一調節流體混合。該淬火腔室之截頭圓錐形形狀藉由重新導引流體流而容許增加該調節流體之紊流，其進一步加速粒子冷卻。可藉由加速提供至該淬火腔室之調節流體之速率而提供額外紊流。儘管淬火腔室之截頭圓錐形形狀及高調節流體流速提供一些額外紊流，但可期望一超紊流淬火腔室用於由一高產量系統生產之更小且更佳受控制之奈米粒子。美國公開案第2008/0277267號中提供一超紊流淬火腔室之一些實施例，該案之全文以引用方式併入本文中。 After the particles are injected from the plasma gun into the quenching chamber, the particles continue to grow during the cooling process due to coagulation and coalescence of the vaporized material. This cooling process takes place in the quenching chamber. In some instances, maintaining a reaction mixture at an excessive temperature for an extended period of time can result in excessively condensed particles in the final product. Cooling newly formed nanoparticles A typical method involves mixing a thermal reaction mixture with a conditioning fluid in a frustoconical quenching chamber. The frustoconical shape of the quenching chamber allows for increased turbulence of the conditioning fluid by redirecting the fluid flow, which further accelerates particle cooling. Additional turbulence can be provided by accelerating the rate of conditioning fluid supplied to the quenching chamber. Although the frustoconical shape of the quenching chamber and the high regulated fluid flow rate provide some additional turbulence, an ultra-turbulent quenching chamber may be desired for smaller and better controlled nanometers produced by a high throughput system. particle. Some embodiments of an ultra-turbulent quenching chamber are provided in U.S. Publication No. 2008/0277267, the entire disclosure of which is incorporated herein by reference.

在一高產量粒子生產系統中，可將紊流誘發射流提供於淬火腔室內以進一步增加紊流且生產一超紊流淬火腔室。圖4A繪示使用紊流誘發射流之超紊流淬火腔室之一實施例。在透過一電漿槍出口404自一電漿槍402射出反應混合物之後，反應混合物進入淬火腔室406。當熱反應混合物移動至淬火腔室406中時，其快速膨脹且開始冷卻。新形成之粒子在淬火腔室內於此冷卻程序期間凝結且生長大小，直至材料之溫度達到低於一臨限溫度。淬火腔室406內之一壓力梯度引起粒子於一淬火腔室出口410處退出淬火腔室406且進入一冷卻導管412。可由安置於淬火腔室之下游之一吸力產生器408提供該壓力梯度。吸力產生器408可為(但不限於)一真空泵或鼓風機。替代地或除吸力產生器408之外，亦可由依比調節流體透過淬火腔室出口410退出之壓力高之一壓力流入至淬火腔室406中之調節流體提供該壓力梯度。可將調節流體提供至一槍盒414，由一或多個口416將槍盒414流體地連接至淬火腔室406。 In a high throughput particle production system, a turbulent trapped emission stream can be provided in the quenching chamber to further increase turbulence and produce a super turbulent quenching chamber. 4A illustrates an embodiment of an ultra-turbulent quenching chamber using a turbulent induced flooding stream. After the reaction mixture is ejected from a plasma gun 402 through a plasma gun outlet 404, the reaction mixture enters the quenching chamber 406. As the thermal reaction mixture moves into the quenching chamber 406, it rapidly expands and begins to cool. The newly formed particles condense and grow in size during the cooling process in the quenching chamber until the temperature of the material reaches below a threshold temperature. A pressure gradient within the quenching chamber 406 causes the particles to exit the quenching chamber 406 at a quenching chamber outlet 410 and into a cooling conduit 412. This pressure gradient can be provided by a suction generator 408 disposed downstream of the quenching chamber. Suction generator 408 can be, but is not limited to, a vacuum pump or blower. Alternatively or in addition to the suction generator 408, the pressure gradient may also be provided by a conditioning fluid that flows into the quenching chamber 406 at a pressure higher than the pressure at which the fluid is removed through the quenching chamber outlet 410. The conditioning fluid can be provided to a gun cartridge 414 that is fluidly coupled to the quenching chamber 406 by one or more ports 416.

為提供額外紊流及加速冷卻，一或多個紊流誘發射流420將紊流流體射入至淬火腔室406中。在一些實施例中，紊流流體具有與調節流體相同之類型。在一些實施例中，紊流流體為氬氣，但亦可為一不同惰性氣體。在一些實施例中，多個紊流誘發射流420圍繞電漿槍出口404安置於一環形形成物中。較佳地，在使用多個紊流誘發射流420之一些實施例中，使紊流誘發射流420均勻地間隔開。在其中採用多個紊流誘發射流420之一些實施例中，紊流誘發射流420可獨立供應有紊流流體。在一些實施例中，紊流誘發射流420可與一單一紊流流體供應器流體互連。在一些實施例中，紊流誘發射流420裝配有一管422及一噴霧噴嘴424。然而，在一些實施例中，未提供噴霧噴嘴424且直接自管422放出紊流流體。 To provide additional turbulence and accelerated cooling, one or more turbulent priming streams 420 inject turbulent fluid into the quenching chamber 406. In some embodiments, the turbulent fluid has the same type as the conditioning fluid. In some embodiments, the turbulent fluid is argon, but can also be a different inert gas. In some embodiments, a plurality of turbulent evoked emissions streams 420 surround the plasma gun Port 404 is disposed in an annular formation. Preferably, in some embodiments in which a plurality of turbulent flooding streams 420 are used, the turbulent trapped emitter streams 420 are evenly spaced apart. In some embodiments in which a plurality of turbulent flooding streams 420 are employed, the turbulent trapping stream 420 can be independently supplied with turbulent fluid. In some embodiments, the turbulent trapped emission stream 420 can be fluidly interconnected with a single turbulent fluid supply. In some embodiments, the turbulent inducer stream 420 is equipped with a tube 422 and a spray nozzle 424. However, in some embodiments, spray nozzle 424 is not provided and turbulent fluid is discharged directly from tube 422.

可依100PSI至300PSI之一壓力將紊流流體供應至紊流誘發射流420以於淬火腔室內誘發紊流。在一些實施例中，依200PSI之一壓力供應紊流流體。在一些實施例中，依120PSI之一壓力供應紊流流體。在一些實施例中，依260PSI之一壓力供應紊流流體。較佳地，所產生之紊流應為大於1000之雷諾數。紊流誘發射流420可透過電漿槍出口404依相對於反應性反應混合物流之20度至120度角射出調節流體，使得當角度大於90度時，調節流體流與反應性反應混合物流方向相反。在一些實施例中，紊流誘發射流420可透過電漿槍出口404射出垂直於反應性反應混合物流之紊流流體，如圖4A中所繪示。在具有多個紊流誘發射流420之實施例中，紊流誘發射流420可遠離環形形成物之中心成角度，使得無紊流誘發射流420朝向任何其他紊流誘發射流420直接放出紊流流體。在一些實施例中，紊流誘發射流420遠離環形形成物之中心成2度至15度角。在一些實施例中，紊流誘發射流420遠離環形形成物之中心成12度角。在一些實施例中，紊流誘發射流420遠離環形形成物之中心成8度角。在一些實施例中，紊流誘發射流420遠離環形形成物之中心成5度角。在一些實施例中，紊流誘發射流420遠離環形形成物之中心成2度角。 The turbulent fluid may be supplied to the turbulent trapped emission stream 420 at a pressure of from 100 PSI to 300 PSI to induce turbulence within the quenching chamber. In some embodiments, the turbulent fluid is supplied at a pressure of one of 200 PSI. In some embodiments, the turbulent fluid is supplied at a pressure of one of 120 PSI. In some embodiments, the turbulent fluid is supplied at a pressure of one of 260 PSI. Preferably, the turbulence produced should be a Reynolds number greater than 1000. The turbulent trapped emission stream 420 is permeable to the conditioning fluid through the plasma gun outlet 404 at an angle of from 20 to 120 degrees relative to the flow of the reactive reaction mixture such that when the angle is greater than 90 degrees, the flow of the conditioning fluid is reversed from the flow of the reactive reaction mixture. . In some embodiments, the turbulent trapped emission stream 420 can exit the turbulent fluid perpendicular to the reactive reaction mixture stream through the plasma gun outlet 404, as depicted in Figure 4A. In embodiments having a plurality of turbulent inducing streams 420, the turbulent inducing stream 420 can be angled away from the center of the annular formation such that the turbulent inducing stream 420 directly vents the turbulent fluid toward any other turbulent inducing stream 420. In some embodiments, the turbulent trapped emission stream 420 is at an angle of 2 to 15 degrees away from the center of the annular formation. In some embodiments, the turbulent trapped emission stream 420 is at a 12 degree angle away from the center of the annular formation. In some embodiments, the turbulent trapped emission stream 420 is at an angle of 8 degrees away from the center of the annular formation. In some embodiments, the turbulent inducer stream 420 is at a 5 degree angle away from the center of the annular formation. In some embodiments, the turbulent trapped emission stream 420 is at a 2 degree angle away from the center of the annular formation.

由紊流誘發射流420產生之紊流促進調節流體與反應混合物之混合，藉此增大淬火速率。可藉由改動由紊流誘發射流420產生之紊流量而調整淬火速率。例如，紊流誘發射流可與材料流動流成90度以上角或藉由增大由紊流誘發射流放出之調節流體之流速而成更大角度。 The turbulence generated by the turbulent trapped emission stream 420 promotes mixing of the conditioning fluid with the reaction mixture, thereby increasing the quenching rate. The turbulence generated by the turbulent induced emission stream 420 can be modified The quenching rate is adjusted by the amount. For example, the turbulent inducing stream may be at an angle of more than 90 degrees to the material flow or by increasing the flow rate of the conditioning fluid released by the turbulent inducing stream.

圖4B及圖5中繪示於超紊流淬火腔室406內生產增加紊流之一替代實施例。在此實施例中，使用一環狀結構426及500來使紊流誘發射流互連。環狀結構426可安置於淬火腔室406內，使得透過電漿槍出口404退出電漿槍402之反應材料流通過環狀結構426。參考圖5，環狀結構500包括流體地連接至紊流流體供應導管504之一內通道502，紊流流體供應導管504可將紊流流體供應至環狀結構。內通道502經組態以將紊流流體大約均勻地分佈於整個環狀結構500中。一或多個出口506沿環狀結構500環形安置以將紊流流體釋放至淬火腔室中。出口506可透過電漿槍出口404依相對於反應性反應混合物流之20度至120度角射出紊流流體，使得當角度大於90度時，紊流流體流與反應性反應混合物流方向相反。在一些實施例中，出口506可透過電漿槍出口404射出垂直於反應性反應混合物流之紊流流體。在具有多個出口506之實施例中，出口506可遠離環形形成物之中心成角度，使得無出口506朝向任何其他出口506直接放出紊流流體。在一些實施例中，出口506遠離環形形成物之中心成2度至15度角。在一些實施例中，出口506遠離環形形成物之中心成約12度角。在一些實施例中，出口506遠離環形形成物之中心成約8度角。在一些實施例中，出口506遠離環形形成物之中心成約5度角。在一些實施例中，出口506遠離環形形成物之中心成約2度角。 An alternative embodiment for producing increased turbulence in the super-turbulent quenching chamber 406 is illustrated in Figures 4B and 5. In this embodiment, a ring structure 426 and 500 are used to interconnect the turbulent trapping streams. The annular structure 426 can be disposed within the quenching chamber 406 such that the reactive material exiting the plasma gun 402 through the plasma gun outlet 404 flows through the annular structure 426. Referring to Figure 5, the annular structure 500 includes a channel 502 fluidly coupled to one of the turbulent fluid supply conduits 504, which can supply turbulent fluid to the annular structure. The inner passage 502 is configured to distribute the turbulent fluid approximately uniformly throughout the annular structure 500. One or more outlets 506 are annularly disposed along the annular structure 500 to release turbulent fluid into the quenching chamber. The outlet 506 can exit the turbulent fluid through the plasma gun outlet 404 at an angle of from 20 to 120 degrees relative to the flow of the reactive reaction mixture such that when the angle is greater than 90 degrees, the turbulent fluid flow is opposite to the flow of the reactive reaction mixture. In some embodiments, the outlet 506 can exit the turbulent fluid perpendicular to the flow of the reactive reaction mixture through the plasma gun outlet 404. In embodiments having multiple outlets 506, the outlet 506 can be angled away from the center of the annular formation such that the no outlet 506 directly vents turbulent fluid toward any other outlet 506. In some embodiments, the outlet 506 is at an angle of 2 to 15 degrees away from the center of the annular formation. In some embodiments, the outlet 506 is at an angle of about 12 degrees from the center of the annular formation. In some embodiments, the outlet 506 is at an angle of about 8 degrees away from the center of the annular formation. In some embodiments, the outlet 506 is at an angle of about 5 degrees away from the center of the annular formation. In some embodiments, the outlet 506 is at an angle of about 2 degrees away from the center of the annular formation.

可依約100PSI至約300PSI之一壓力將紊流流體供應至出口506以於淬火腔室內誘發紊流。在一些實施例中，依約200PSI之一壓力供應紊流流體。在一些實施例中，依約120PSI之一壓力供應紊流流體。在一些實施例中，依約260PSI之一壓力供應紊流流體。較佳地，所產生之紊流應為大於1000之雷諾數。 Turbulent fluid may be supplied to the outlet 506 at a pressure of from about 100 PSI to about 300 PSI to induce turbulence within the quenching chamber. In some embodiments, the turbulent fluid is supplied at a pressure of about one hundred PSI. In some embodiments, the turbulent fluid is supplied at a pressure of about 120 PSI. In some embodiments, the turbulent fluid is supplied at a pressure of about 260 PSI. Preferably, the turbulence produced should be a Reynolds number greater than 1000.

超紊流淬火腔室相對於更典型淬火腔室而縮短新形成粒子之冷卻時間以導致更小且更受控之粒子。可期望一超紊流淬火腔室用於一高產量粒子生產系統中以連續生產最佳且大小均勻之粒子。 The ultra-turbulent quenching chamber shortens the cooling time of newly formed particles relative to a more typical quenching chamber to result in smaller and more controlled particles. An ultra-turbulent quenching chamber can be desired for use in a high throughput particle production system to continuously produce optimal and uniform particles.

一冷卻導管中之層流擾動器Laminar flow disruptor in a cooling duct

在基於電漿之典型粒子生產系統中，調節流體中所夾帶之新形成粒子經由一流體連接之冷卻導管自淬火腔室流動至一收集器。在粒子與調節流體之混合物自淬火腔室排出之後，粒子與調節流體之混合物可穩定化為一層流，而在一典型冷卻導管中，即使已在淬火腔室中擾動粒子與調節流體之混合物，仍無法使粒子與調節流體之混合物穩定化為一層流。相反地，在該冷卻導管中，粒子仍較暖和且可聚集於該冷卻導管之壁上。在一典型粒子生產系統之一操作時期之後，粒子沿冷卻導管壁之累積可導致非所要大小粒子或冷卻導管之阻塞。因此，將需要一非所要系統關閉來手動清潔冷卻導管且使系統恢復至正常運轉。較佳地，一連續高產量之基於電漿之粒子生產系統避免粒子累積於冷卻導管內。 In a plasma-based typical particle production system, newly formed particles entrained in a conditioning fluid flow from a quenching chamber to a collector via a fluidly connected cooling conduit. After the mixture of particles and conditioning fluid is discharged from the quenching chamber, the mixture of particles and conditioning fluid can be stabilized into a laminar flow, while in a typical cooling conduit, even if the mixture of particles and conditioning fluid has been disturbed in the quenching chamber, It is still not possible to stabilize the mixture of particles and conditioning fluid into a layer of flow. Conversely, in the cooling duct, the particles are still warmer and can collect on the wall of the cooling duct. After a period of operation of a typical particle production system, the accumulation of particles along the walls of the cooling conduit can result in blockage of particles of undesirable size or cooling conduits. Therefore, an undesired system shutdown would be required to manually clean the cooling duct and return the system to normal operation. Preferably, a continuous high throughput plasma based particle production system prevents particles from accumulating within the cooling conduit.

可藉由將一層流擾動器提供於冷卻導管內而防止或減緩新形成之奈米粒子沿冷卻導管之壁累積。該層流擾動器將調節流體與新形成粒子之混合物之層流轉換為非層流。非層流重新導引粒子以引起所夾帶之粒子與黏著至導管壁之粒子碰撞。此等碰撞使黏著粒子自冷卻導管壁去除以容許去除粒子重新進入系統流。此防止粒子累積於冷卻導管內且無需歸因於粒子累積於冷卻導管內而關閉一系統。因此，可期望冷卻導管中之該層流擾動器用於具有一致材料產量之一高產量粒子生產系統之連續操作。 The newly formed nanoparticles can be prevented from accumulating along the walls of the cooling conduit by providing a layer of flow disruptor within the cooling conduit. The laminar flow disruptor converts the laminar flow of the conditioning fluid to the mixture of newly formed particles into a non-laminar flow. The non-laminar flow redirects the particles to cause the entrained particles to collide with particles adhering to the walls of the conduit. These collisions remove the adherent particles from the cooling conduit wall to allow the removed particles to re-enter the system flow. This prevents particles from accumulating within the cooling conduit and does not require shutting down a system due to the accumulation of particles within the cooling conduit. Thus, it may be desirable for the laminar flow disruptor in the cooling conduit to be used for continuous operation of a high throughput particle production system having consistent material yields.

圖6A至圖6D及圖7中繪示一層流擾動器之一些實施例。經組合之調節流體、紊流流體及反應混合物自一淬火腔室602流動通過一淬火腔室射出口604且進入一冷卻導管606。在一些實施例中，一層流擾動器608存在於冷卻導管606內。層流擾動器608可包含(但不限於)一或多個葉片、擋板、一螺旋螺釘(圖6A)、隆脊、凸塊(圖6B)、空氣射流(圖6C)、旋轉或固定軸向配置桿或葉片(圖6D及圖7)、或其他氣流重新導引器件。一些實施例可使用多種類型之層流擾動器。在一些實施例中，層流擾動器608可移動或旋轉。在一些實施例中，層流擾動器608靜止不動。 Some embodiments of a layer flow disruptor are illustrated in Figures 6A-6D and Figure 7. The combined conditioning fluid, turbulent fluid, and reaction mixture flow from a quenching chamber 602 through a quenching chamber exit 604 and into a cooling conduit 606. In some embodiments, a layer of flow disturbance The 608 is present within the cooling conduit 606. The laminar flow disruptor 608 can include, but is not limited to, one or more blades, baffles, a helical screw (Fig. 6A), ridges, bumps (Fig. 6B), air jets (Fig. 6C), rotating or fixed axes. Redirect the device to the stem or blade (Figure 6D and Figure 7), or other airflow. Some embodiments may use multiple types of laminar flow disruptors. In some embodiments, the laminar flow disruptor 608 can be moved or rotated. In some embodiments, the laminar flow disruptor 608 is stationary.

當層流擾動器608為一螺旋螺釘(如圖6A中所繪示)時，該螺旋螺釘可延伸穿過冷卻導管606之整個長度或可僅在冷卻導管之長度之一部分內延伸。當該螺旋螺釘僅在冷卻導管之長度之一部分內延伸時，可在整個冷卻導管606中使用多個螺旋螺釘分段。該螺旋螺釘之各分段較佳地完成圍繞一螺旋軸之至少一整圈，然而，層流擾動器608之螺旋螺釘形式之一些實施例無需如此。當調節流體與粒子之一混合物進入冷卻導管606時，藉由該螺旋螺釘重新導引層流而擾動層流以誘發非層流。 When the laminar flow disruptor 608 is a helical screw (as depicted in Figure 6A), the helical screw can extend through the entire length of the cooling conduit 606 or can extend only within a portion of the length of the cooling conduit. When the screw extends only within a portion of the length of the cooling conduit, a plurality of helical screw segments can be used throughout the cooling conduit 606. Each segment of the helical screw preferably completes at least one full turn about a helical axis, however, some embodiments of the helical flow screw form of the laminar flow disruptor 608 need not be. When the mixture of conditioning fluid and particles enters the cooling conduit 606, the laminar flow is disturbed by the helical screw to disturb the laminar flow to induce non-laminar flow.

當層流擾動器608為一或多個凸塊(如圖6B中所繪示)時，該等凸塊可隨機或均勻地分佈於整個冷卻導管中。在一些實施例中，冷卻導管606之一區段中之凸塊可比冷卻導管606之另一區段中之凸塊集中或聚集。當層流擾動器608由一系列凸塊組成時，該等凸塊可為(但不限於)鄰接。 When the laminar flow disruptor 608 is one or more bumps (as depicted in Figure 6B), the bumps may be randomly or evenly distributed throughout the cooling conduit. In some embodiments, the bumps in one of the sections of the cooling conduit 606 can be concentrated or concentrated than the bumps in another section of the cooling conduit 606. When the laminar flow disruptor 608 is comprised of a series of bumps, the bumps can be, but are not limited to, abutting.

當層流擾動器608包括一或多個空氣射流(如圖6C中所繪示)時，一層流擾動器流體源610流體地連接一供應通道612，供應通道612可經由一層流擾動器流體注射口614將層流擾動器流體注射至冷卻導管606。較佳地，層流擾動器流體具有與調節流體相同之流體類型，但可為任何其他惰性氣體。若使用多個空氣射流，則層流擾動器流體注射口614可沿冷卻導管606環形安置於各種點處。在一些實施例中，遠離淬火腔室602而導引層流注射口614。在一些實施例中，垂直於冷卻導管606之壁或沿淬火腔室602之方向導引層流注射口614。當高產量粒子生產系統處於操作中時，注入至冷卻導管606中之層流擾動器流體之力可改動調節流體與粒子之混合物於冷卻導管606內之軌跡且引起非層流。此分層流防止粒子沿冷卻導管606之壁累積。 When laminar flow disruptor 608 includes one or more air jets (as depicted in Figure 6C), one layer of flow damper fluid source 610 is fluidly coupled to a supply passage 612, which is fluidly injected via a layer of flow damper Port 614 injects a laminar flow disruptor fluid into cooling conduit 606. Preferably, the laminar flow disruptor fluid has the same fluid type as the conditioning fluid, but can be any other inert gas. If multiple air jets are used, the laminar flow damper fluid injection port 614 can be annularly disposed at various points along the cooling conduit 606. In some embodiments, the laminar flow injection port 614 is directed away from the quenching chamber 602. In some embodiments, perpendicular to cooling The laminar flow injection port 614 is directed to the wall of the conduit 606 or in the direction of the quenching chamber 602. When the high throughput particle production system is in operation, the force of the laminar flow disruptor fluid injected into the cooling conduit 606 can alter the trajectory of the mixture of conditioning fluid and particles within the cooling conduit 606 and cause non-laminar flow. This stratified flow prevents particles from accumulating along the walls of the cooling conduit 606.

當由軸向配置之桿或葉片體現層流擾動器(如圖6D中所繪示)時，一或多個層流擾動器608可放置於冷卻導管606內，使得調節流體與粒子之混合物於該等桿或葉片之間流動。該等葉片或桿可旋轉，使得當由調節流體夾帶之粒子通過該等桿或葉片時，可產生一實質上渦旋型樣。若多個層流擾動器608包括旋轉桿或葉片，則可沿相同方向或不同方向旋轉該等桿或葉片。若使用葉片時，則該等葉片可沿自垂直於冷卻導管606之軌跡至平行於冷卻導管606之軌跡之任何定向。圖7繪示包括圍繞一軸之旋轉桿之層流擾動器之一實施例。在此實施例中，一馬達702安置於層流擾動器700之中心中。附接至馬達702之兩個或兩個以上桿704圍繞馬達702環形安置且由馬達702控制。在高產量粒子生產系統之操作期間，馬達702引起桿704圍繞一中心軸旋轉。視情況而定，一穩定輪緣706可圍繞層流擾動器700之圓周定位以限制桿704之位移。桿704之旋轉可引起冷卻導管606內之冷卻流體中所夾帶之粒子旋轉以產生非層流。該非層流可引起黏著至冷卻導管606之壁之粒子被去除。 When a laminar flow disruptor (as depicted in Figure 6D) is embodied by an axially disposed rod or vane, one or more laminar flow disruptors 608 can be placed within the cooling conduit 606 such that the mixture of fluid and particles is adjusted The rods or blades flow between them. The vanes or rods are rotatable such that when the particles entrained by the conditioning fluid pass through the rods or vanes, a substantially vortex pattern can be created. If the plurality of laminar flow disrupters 608 include rotating rods or blades, the rods or blades can be rotated in the same direction or in different directions. If blades are used, the blades may follow any orientation from a trajectory perpendicular to the cooling conduit 606 to a trajectory parallel to the cooling conduit 606. Figure 7 illustrates an embodiment of a laminar flow disruptor including a rotating rod about an axis. In this embodiment, a motor 702 is disposed in the center of the laminar flow disruptor 700. Two or more rods 704 attached to the motor 702 are annularly disposed about the motor 702 and are controlled by the motor 702. During operation of the high throughput particle production system, motor 702 causes rod 704 to rotate about a central axis. A stabilizing rim 706 can be positioned around the circumference of the laminar flow damper 700 to limit the displacement of the rod 704, as appropriate. Rotation of the rod 704 can cause particles entrained in the cooling fluid within the cooling conduit 606 to rotate to create a non-laminar flow. This non-laminar flow can cause particles that adhere to the walls of the cooling conduit 606 to be removed.

層流擾動器608藉由重新導引冷卻導管606內之材料定向流而限制沿冷卻導管606之壁凝結粒子。一些粒子仍可黏著至導管壁；然而，恆定流重新導引藉由引起氣流內之粒子與黏著至壁之粒子碰撞而去除黏著粒子。因此，層流擾動器防止冷卻導管606之阻塞以容許藉由無需關閉高產量粒子生產系統來清潔冷卻導管606而使材料流連續。因此，可期望一高產量粒子生產系統之冷卻導管內之一層流擾動器用於連續且一致之操作及材料產量。 The laminar flow disruptor 608 limits condensation of particles along the wall of the cooling conduit 606 by redirecting the directed flow of material within the cooling conduit 606. Some particles can still adhere to the catheter wall; however, constant flow re-orientation removes adherent particles by causing particles within the gas stream to collide with particles adhering to the wall. Thus, the laminar flow disruptor prevents clogging of the cooling conduit 606 to allow the material flow to continue by cleaning the cooling conduit 606 without shutting down the high throughput particle production system. Thus, a laminar flow disruptor within a cooling conduit of a high throughput particle production system can be desired for continuous and consistent operation and material throughput.

所描述之系統容許粒子生產系統在冷卻導管內不發生阻塞之情況下依每分鐘至少9克、每分鐘至少30克或每分鐘至少60克之一流速連續操作至少6個小時、至少12個小時、至少24個小時、至少48個小時、至少72個小時(3天)、至少336個小時(14天)、至少672個小時(28天)或至少1344個小時(56天)。 The described system allows the particle production system to operate continuously for at least 6 hours, at least 12 hours per minute at least 9 grams per minute, at least 30 grams per minute, or at least 60 grams per minute, without clogging within the cooling conduit. At least 24 hours, at least 48 hours, at least 72 hours (3 days), at least 336 hours (14 days), at least 672 hours (28 days), or at least 1344 hours (56 days).

具有恆定超壓之氣體輸送系統Gas delivery system with constant overpressure

在一典型粒子生產系統中，一般使用容許粒子自電漿槍流動至一收集器件之一壓力梯度來維持材料產量。可藉由在一收集器件之下游施加一吸力以相對於上游電漿槍及淬火腔室產生一負壓力而建立該壓力梯度。通常使用一過濾器來將粒子收集於該收集器件中。然而，在一典型粒子生產系統之操作期間，該過濾器可變為被阻塞以需要更大吸力來產生所要壓力梯度且確保連續粒子產量。當替換該過濾器時，需要減小吸力來產生所要壓力梯度。然而，該吸力可引起電漿槍或淬火腔室之內部壓力下降至低於周圍壓力以導致歸因於粒子形成期間之周圍氣體之流入的污染。可藉由於環繞電漿槍之一槍盒中及於淬火腔室中產生相對於周圍壓力之一超壓而減輕洩漏。然而，過高超壓將導致自系統至周圍環境之過度洩漏，因此較佳地使超壓最小化。歸因於吸力之波動，將一固定超壓提供至系統中無法有效地最小化系統壓力與周圍壓力之間之壓力差。對於使用一高產量粒子生產系統之一致產量，較佳地最小化系統與周圍環境之間之壓力差，同時維持相對於周圍壓力之一恆定超壓。 In a typical particle production system, a pressure gradient that allows particles to flow from a plasma gun to a collection device is typically used to maintain material throughput. The pressure gradient can be established by applying a suction downstream of a collection device to generate a negative pressure relative to the upstream plasma gun and quench chamber. A filter is typically used to collect the particles in the collection device. However, during operation of a typical particle production system, the filter can become blocked to require greater suction to produce the desired pressure gradient and ensure continuous particle throughput. When replacing the filter, it is desirable to reduce the suction to produce the desired pressure gradient. However, this suction can cause the internal pressure of the plasma gun or quenching chamber to drop below ambient pressure to cause contamination due to the inflow of ambient gas during particle formation. Leakage can be mitigated by overpressure in one of the gun cartridges surrounding the plasma gun and in the quenching chamber relative to one of the ambient pressures. However, excessive overpressure will result in excessive leakage from the system to the surrounding environment, thus preferably minimizing overpressure. Due to fluctuations in suction, providing a fixed overpressure to the system does not effectively minimize the pressure differential between system pressure and ambient pressure. For consistent throughput using a high throughput particle production system, the pressure differential between the system and the surrounding environment is preferably minimized while maintaining a constant overpressure relative to one of the ambient pressures.

吾人已發現，可透過使用一氣體供應系統及對周圍壓力敏感之一系統超壓模組而維持相對於周圍壓力之一有效恆定系統超壓。由該系統超壓模組產生之該系統超壓可最小化系統洩漏及污染，此係因為其經組態以將具有高於周圍壓力之固定量之調節流體供應至一槍盒。在一些實施例中，該氣體供應系統將略微高於周圍壓力但足以維持一壓力梯度之調節流體輸送至槍盒及收集系統兩者。替代地，獨立氣體供應系統將調節流體供應至槍盒及收集系統。在另一替代例中，僅將調節流體供應至槍盒且不供應至收集器件。此系統容許高產量粒子生產系統於槍盒及淬火腔室內維持一恆定但最小之系統超壓。較佳地，該系統維持比周圍壓力高至少1英寸水柱或比周圍壓力高至少2英寸水柱之一超壓。較佳地，該系統維持比周圍壓力高小於10英寸水柱、比周圍壓力高小於5英寸水柱或比周圍壓力高小於3英寸水柱之一超壓。 We have found that an effective constant system overpressure with respect to one of the ambient pressures can be maintained by using a gas supply system and one of the system overpressure modules sensitive to ambient pressure. The system overpressure generated by the system overpressure module minimizes system leakage and contamination because it is configured to supply a fixed amount of conditioning fluid above ambient pressure to a gun cartridge. In some embodiments, the gas supply system will be slightly above ambient pressure but sufficient to maintain one The pressure gradient conditioning fluid is delivered to both the gun box and the collection system. Alternatively, the independent gas supply system supplies conditioning fluid to the gun box and collection system. In another alternative, only the conditioning fluid is supplied to the gun cartridge and not to the collection device. This system allows a high throughput particle production system to maintain a constant but minimal system overpressure in the gun box and quench chamber. Preferably, the system maintains an overpressure of at least 1 inch of water column above ambient pressure or at least 2 inches of water column above ambient pressure. Preferably, the system maintains an overpressure of less than 10 inches of water column above ambient pressure, less than 5 inches of water column above ambient pressure, or less than 3 inches of water column above ambient pressure.

圖8繪示具有恆定超壓之一氣體輸送系統800之一實施例。一壓力梯度形成於調節流體流入至槍盒802中且由冷卻導管806下游之一吸力產生器804施加一吸力時。在一些實施例中，吸力產生器804為一真空泵。在一些實施例中，吸力產生器804為一鼓風機。在一些實施例中，將吸力產生器提供於一收集器件808內。吸力產生器804牽引廢棄調節流體通過收集器件808且較佳地通過一過濾器元件810。過濾器元件810經組態以移除調節流體流內之剩餘粒子以產生一過濾輸出。在高產量粒子生產系統之連續操作期間，過濾器元件810可變為被阻塞，其可導致需要增大吸力。可藉由利用一系統超壓模組812來經由槍盒802將調節流體供應至淬火腔室814而維持系統超壓。 FIG. 8 illustrates an embodiment of a gas delivery system 800 having a constant overpressure. A pressure gradient is formed when the conditioning fluid flows into the gun casing 802 and a suction force is applied by one of the suction generators 804 downstream of the cooling conduit 806. In some embodiments, the suction generator 804 is a vacuum pump. In some embodiments, the suction generator 804 is a blower. In some embodiments, a suction generator is provided within a collection device 808. Suction generator 804 draws waste conditioning fluid through collection device 808 and preferably through a filter element 810. Filter element 810 is configured to remove residual particles within the conditioning fluid stream to produce a filtered output. During continuous operation of the high throughput particle production system, the filter element 810 can become blocked, which can result in the need to increase suction. The system overpressure can be maintained by utilizing a system overpressure module 812 to supply conditioning fluid to the quenching chamber 814 via the gun cartridge 802.

在氣體輸送系統800之一實施例中，一或多個調節流體儲存槽816被整合至氣體供應系統中且流體地連接至系統超壓模組812。在一些實施例中，一或多個調節流體供應閥818可視情況放置於任何調節流體儲存槽816與系統超壓模組812之間。在其中使用一個以上調節流體儲存槽816之一實施例中，流體類型可為相同類型或不同類型。在一實施例中，調節流體儲存槽816含有氬氣。調節流體經由一調節流體供應導管820自調節流體儲存槽816流動至系統超壓模組812。 In one embodiment of the gas delivery system 800, one or more conditioning fluid storage tanks 816 are integrated into the gas supply system and fluidly coupled to the system overpressure module 812. In some embodiments, one or more conditioning fluid supply valves 818 can be placed between any of the conditioning fluid storage slots 816 and the system overpressure module 812 as appropriate. In one embodiment in which more than one conditioning fluid storage tank 816 is used, the fluid types can be the same type or different types. In an embodiment, the conditioning fluid storage tank 816 contains argon. The conditioning fluid flows from the conditioning fluid storage tank 816 to the system overpressure module 812 via a conditioning fluid supply conduit 820.

系統超壓模組812調節自調節流體儲存槽816至槍盒802之流動。系統超壓模組812確保：依相對於周圍壓力之一恆定但最小超壓將調節流體供應至槍盒802。在一些實施例中，系統超壓模組812含於一單一容納單元內。在一些實施例中，系統超壓模組812不含於一單一容納單元內。在一些實施例中，系統超壓模組812未容納於任何單元中，但可代以為導管、閥及壓力調節器之一網狀結構。系統超壓模組812包括流體地串聯耦合之一或多個壓力調節器822、824及826。在一些實施例中，系統超壓模組812亦包括一或多個壓力釋放閥828及830。 The system overpressure module 812 regulates the flow of the self-adjusting fluid storage tank 816 to the gun box 802. The system overpressure module 812 ensures that it is constant according to one of the ambient pressures but the minimum overpressure will be adjusted The throttle fluid is supplied to the gun box 802. In some embodiments, the system overpressure module 812 is contained within a single containment unit. In some embodiments, system overpressure module 812 is not contained within a single containment unit. In some embodiments, the system overpressure module 812 is not housed in any unit, but may instead be a network of conduits, valves, and pressure regulators. The system overpressure module 812 includes one or more pressure regulators 822, 824, and 826 that are fluidly coupled in series. In some embodiments, system overpressure module 812 also includes one or more pressure relief valves 828 and 830.

在氣體輸送系統800之一實施例中，經由一調節流體供應導管820將一調節流體運送至系統超壓模組812。調節流體儲存槽816依一原始壓力P₁(諸如約250PSI至約350PSI)將調節流體供應至調節流體供應導管820及系統超壓模組812。系統超壓模組812將調節流體壓力自一入口壓力P₁減小至相對於周圍壓力設定之一出口壓力P₄。在一些實施例中，出口壓力P₄為大於周圍壓力之固定量。在一些實施例中，出口壓力P₄具有相對於周圍壓力之一固定比率。在一些實施例中，系統超壓模組812依比周圍壓力高約1英寸至約12英寸水柱之一出口壓力範圍將調節流體供應至槍盒802。在一些實施例中，系統超壓模組812依比周圍壓力高約4英寸水柱之一出口壓力將調節流體供應至槍盒802。在一些實施例中，系統超壓模組812依比周圍壓力高約8英寸水柱之一出口壓力將調節流體供應至槍盒802。在一些實施例中，系統超壓模組812依比周圍壓力高約2英寸水柱之一出口壓力將調節流體供應至槍盒802。在一些實施例中，系統超壓模組812依比周圍壓力高約1英寸水柱之一出口壓力範圍將調節流體供應至槍盒802。 In one embodiment of the gas delivery system 800, a conditioning fluid is delivered to the system overpressure module 812 via a conditioning fluid supply conduit 820. Conditioning fluid storage tank 816 by a raw pressure P ₁ (such as about 250PSI to about 350 PSI) to a conditioning fluid supply conditioning fluid supply conduit 820 and the system module 812 overpressure. Overpressure system module 812 to adjust the fluid pressure decreases from an inlet ₁ to a pressure P with respect to ambient pressure setting one of the outlet pressure P _4. In some embodiments, the outlet pressure P ₄ is larger than a fixed amount of ambient pressure. In some embodiments, the outlet pressure P ₄ one with respect to the ambient pressure fixed ratio. In some embodiments, system overpressure module 812 supplies conditioning fluid to gun cartridge 802 at an outlet pressure range that is about 1 inch to about 12 inches of water column above ambient pressure. In some embodiments, the system overpressure module 812 supplies conditioning fluid to the gun cartridge 802 at an outlet pressure that is about 4 inches of water column above ambient pressure. In some embodiments, the system overpressure module 812 supplies conditioning fluid to the gun cartridge 802 at an outlet pressure that is about 8 inches of water column above ambient pressure. In some embodiments, the system overpressure module 812 supplies conditioning fluid to the gun cartridge 802 at an outlet pressure that is about 2 inches of water column above ambient pressure. In some embodiments, the system overpressure module 812 supplies conditioning fluid to the gun cartridge 802 at an outlet pressure range that is about 1 inch of water column above ambient pressure.

在一些實施例中，各壓力調節器822、824及826包括一控制部分832、834及836及一閥部分838、840及842。在一些實施例中，該等壓力調節器之至少一者使用一基於隔膜之調節機構。較佳地，該基於隔膜之調節機構包括一基於隔膜之定量閥。通常，第一串聯定位之壓力調節器822依P₁自調節流體供應導管820接收調節流體。控制部分838使用來自P₁及周圍壓力之輸入來控制閥部分832以依一出口壓力P₂(諸如比周圍壓力高約50PSI)釋放調節流體。在一些實施例中，一第二串聯定位之壓力調節器824依P₂接收調節流體。控制部分840使用輸入壓力P₂及周圍壓力來控制閥部分834以依一出口壓力P₃(諸如比周圍壓力高約2PSI)釋放調節流體。在一些實施例中，一第三串聯定位之壓力調節器826依P₃接收調節流體。控制部分842使用輸入壓力P₃及周圍壓力來控制閥部分836以依一出口壓力P₄釋放調節流體。 In some embodiments, each of the pressure regulators 822, 824, and 826 includes a control portion 832, 834, and 836 and a valve portion 838, 840, and 842. In some embodiments, at least one of the pressure regulators uses a diaphragm-based adjustment mechanism. Preferably, the diaphragm-based adjustment mechanism comprises a diaphragm-based metering valve. Typically, the first pressure regulator 822 positioned in series of the supply conduit 820 by adjusting P ₁ from the fluid receiving conditioning fluid. From the control section 838 using the input P ₁ and the ambient pressure is controlled by a valve portion 832 to the outlet pressure P ₂ (such as about 50PSI higher than the ambient pressure) to release the fluid regulator. In some embodiments, a second pressure regulator 824 is positioned in series the conditioning fluid received by P _2. Using the input control section 840 and the ambient pressure P ₂ pressure control valve portion 834 by an outlet to release pressure P ₃ (such as about 2PSI higher than the ambient pressure) conditioning fluid. In some embodiments, a third pressure regulator 826 positioned in series the conditioning fluid received by P _3. Using the input control section 842 and a pressure P ₃ around the pressure control valve portion 836 to the outlet pressure P ₄ by releasing a conditioning fluid.

在一些實施例中，系統超壓模組812可視情況包括流體地耦合於最後壓力調節器826與槍盒802之間之一或多個獨立壓力釋放閥828及830。在一些實施例中，若所接收之壓力大於一選定壓力，則壓力釋放閥828及830經組態以將氣體排放至周圍環境。在一些實施例中，第一壓力釋放閥828依壓力P₄自最後串聯壓力調節器826接收氣體。在一些實施例中，若P₄高於一選定臨限值，則壓力釋放閥828將氣體排放至周圍環境以減小至槍盒802之入口壓力。在一些實施例中，該選定臨限值相對高於周圍壓力，使得在正常操作下無需啟動壓力釋放閥828。在一些實施例中，系統超壓模組812包括具有不同敏感度且被設定為不同臨限值之複數個壓力釋放閥828及830。較佳地，第二串聯安置之壓力釋放閥830具有比第一串聯安置之壓力釋放閥828低之一臨限值。 In some embodiments, system overpressure module 812 can optionally include one or more independent pressure relief valves 828 and 830 fluidly coupled between final pressure regulator 826 and gun cartridge 802. In some embodiments, pressure relief valves 828 and 830 are configured to vent gas to the surrounding environment if the received pressure is greater than a selected pressure. In some embodiments, a first pressure relief valve 828 is adjusted 826 by receiving gas pressure P ₄ in series from the last pressure. In some embodiments, if the P ₄ above a selected threshold value, the pressure relief valve 828 to the ambient gas emissions to reduce the pressure to the inlet 802 of the gun cartridge. In some embodiments, the selected threshold is relatively higher than the ambient pressure such that the pressure relief valve 828 need not be activated under normal operation. In some embodiments, system overpressure module 812 includes a plurality of pressure relief valves 828 and 830 having different sensitivities and being set to different thresholds. Preferably, the second series-placed pressure relief valve 830 has a lower threshold than the first series-connected pressure relief valve 828.

在具有連續且一致之材料產量之一高產量粒子生產系統中，可期望藉由使電漿槍及淬火腔室之壓力維持為略微高於周圍壓力而避免污染。將藉由組態一氣體輸送系統以依相對於周圍壓力之一恆定超壓將調節流體輸送至槍盒且減小系統與周圍環境之間之壓力差而最小化連續操作之高產量粒子生產系統之污染。此容許高品質奈米粒子之一致材料產量及生產。 In a high throughput particle production system with continuous and consistent material throughput, it may be desirable to avoid contamination by maintaining the pressure of the plasma gun and quenching chamber slightly above ambient pressure. A high-volume particle production system that minimizes continuous operation by configuring a gas delivery system to deliver a regulated fluid to the gun box at a constant overpressure relative to one of the ambient pressures and reducing the pressure differential between the system and the surrounding environment Pollution. This allows consistent material yield and production of high quality nanoparticles.

調節流體淨化及再循環系統Regulating fluid purification and recirculation systems

可使用大量高純度調節流體來確保恆定材料流通過奈米粒子生產系統。在典型粒子生產系統中，一般將廢棄調節流體排放至周圍環境中。儘管此解決方案可對較小規模之粒子生產有效，但將廢棄調節流體排放至周圍環境中不具成本效益或對保持連續操作之一高產量粒子生產系統而言無法達到環保要求。此外，排放廢棄調節流體可歸因於調節流體供應貯槽之頻繁替換而引起粒子生產放緩或停止。未經淨化之廢棄調節流體之再循環將導致可歸因於系統、供給材料或不同於調節流體之任何輔助流體(諸如工作氣體或紊流流體)之洩漏而引入至粒子生產系統中之雜質之累積。此等雜質可包含(但不限於)反應性氧化雜質、氫氣、氯化合物或水。一具成本效益之高產量粒子生產系統使調節流體再循環，同時維持調節流體純度。此導致更少流體浪費，確保更高品質之粒子生產，且避免可發生於替換空供應貯槽時之系統關閉。 A large amount of high purity conditioning fluid can be used to ensure a constant flow of material through the nanoparticle production system. In a typical particle production system, the spent conditioning fluid is typically vented to the surrounding environment. Although this solution can be effective for smaller scale particle production, it is not cost effective to discharge the spent conditioning fluid to the surrounding environment or to meet environmental requirements for a high throughput particle production system that maintains continuous operation. In addition, the discharge of waste conditioning fluid can cause particle production to slow or stop due to frequent replacement of the conditioning fluid supply reservoir. Recirculation of the unpurified waste conditioning fluid will result in impurities introduced into the particle production system attributable to leakage of the system, feed material or any auxiliary fluid other than the conditioning fluid, such as a working gas or turbulent fluid. accumulation. Such impurities may include, but are not limited to, reactive oxidizing impurities, hydrogen, chlorine compounds, or water. A cost effective high throughput particle production system recycles the conditioning fluid while maintaining the purity of the conditioning fluid. This results in less fluid wastage, ensures higher quality particle production, and avoids system shutdown that can occur when replacing an empty supply tank.

可使調節流體於一高產量粒子生產系統內再循環以減少昂貴調節流體之浪費。吾人已發現，亦可在調節流體之再循環期間使用一調節流體淨化系統來移除雜質以容許一始終純淨之調節流體再循環返回至系統中。一調節流體淨化及再循環系統可給一連續操作之高產量粒子生產系統提供經再循環且經淨化之調節流體以對一高產量粒子生產系統之連續操作提供一具成本效益之解決方案。 The conditioning fluid can be recirculated within a high throughput particle production system to reduce waste of expensive conditioning fluids. It has been discovered that a conditioning fluid purification system can also be used during the recirculation of the conditioning fluid to remove impurities to allow an always pure conditioning fluid to be recirculated back into the system. A conditioning fluid purification and recirculation system provides a continuously operated high throughput particle production system with a recirculating and purified conditioning fluid to provide a cost effective solution for continuous operation of a high throughput particle production system.

圖9繪示與一高產量粒子生產系統一起操作之一調節流體淨化及再循環系統之一實施例。當該高產量粒子生產系統處於操作中時，將工作氣體902及供給材料904引入至一電漿槍906。電漿槍906產生一電漿且在將該電漿排入至淬火腔室908中之前與所引入之供給材料及工作氣體一起形成一熱反應性混合物。一旦處於淬火腔室908中，則由調節流體冷卻該熱反應性混合物。調節流體流中所夾帶之冷卻粒子在由一收集器件912收集之前通過一冷卻導管910。在將廢棄調節流體連同任何雜質引入至一調節流體淨化系統916之前由一吸力產生器914(諸如一真空泵或鼓風機)將該等廢棄調節流體連通任何雜質牽引通過系統。 Figure 9 illustrates one embodiment of a regulated fluid purification and recirculation system operating with a high throughput particle production system. Work gas 902 and feed material 904 are introduced to a plasma gun 906 when the high throughput particle production system is in operation. The plasma gun 906 produces a plasma and forms a thermally reactive mixture with the introduced feed material and working gas prior to discharge of the slurry into the quenching chamber 908. Once in the quenching chamber 908, the thermally reactive mixture is cooled by the conditioning fluid. Regulating the cooling particles entrained in the fluid stream It is passed through a cooling conduit 910 before being collected by a collection device 912. The waste conditioning fluid is passed through the system by a suction generator 914 (such as a vacuum pump or blower) prior to introducing the spent conditioning fluid along with any impurities into a conditioning fluid purification system 916.

調節流體淨化系統916可為經組態以接受廢棄調節流體且放出一更純淨調節流體之任何系統。圖9繪示一調節流體淨化及再循環系統之一實施例。在將廢棄調節流體輸入至調節流體淨化系統916中之後，一壓縮機918迫使廢棄調節流體進入一氣體淨化器920。氣體淨化器920可包含自一氣體移除雜質之任何已知系統，其包含(但不限於)加熱或周圍溫度吸收劑、乾燥劑、重力分離器、基於氫氧化物之洗氣器或其他化學觸媒。在一些實施例中，可於周圍環境中透過一釋放孔922處理掉已移除之氣態雜質。在一些實施例中，可將雜質截留於一可替換濾筒上。 The conditioning fluid purification system 916 can be any system configured to accept waste conditioning fluid and deliver a cleaner conditioning fluid. Figure 9 illustrates an embodiment of a conditioning fluid purification and recirculation system. After the spent conditioning fluid is input to the conditioning fluid purification system 916, a compressor 918 forces the spent conditioning fluid into a gas purifier 920. Gas purifier 920 can include any known system for removing impurities from a gas including, but not limited to, heating or ambient temperature absorbents, desiccants, gravity separators, hydroxide based scrubbers, or other chemistries catalyst. In some embodiments, the removed gaseous impurities can be disposed of through a release aperture 922 in the surrounding environment. In some embodiments, impurities can be trapped on a replaceable filter cartridge.

在一些實施例中，一壓力釋放閥924、一溫度控制模組926或一過濾器928各可視情況安置且流體地連接於吸力產生器914與壓縮機918之間。若壓力高於一預定臨限值，則壓力釋放閥924可經組態以將廢棄調節流體釋放至周圍環境中。溫度控制模組926較佳為一熱交換器，且可用以降低淨化之前之廢棄調節流體之溫度。過濾器928可為(但不限於)一粒子過濾器或化學過濾器。 In some embodiments, a pressure relief valve 924, a temperature control module 926, or a filter 928 are each optionally disposed and fluidly coupled between the suction generator 914 and the compressor 918. If the pressure is above a predetermined threshold, the pressure relief valve 924 can be configured to release the spent conditioning fluid into the surrounding environment. The temperature control module 926 is preferably a heat exchanger and can be used to reduce the temperature of the spent conditioning fluid prior to purification. Filter 928 can be, but is not limited to, a particle filter or a chemical filter.

在將經淨化之調節流體導引至一槍盒934之前，可將一或多個壓力調節器930安置於氣體淨化器920之下游以完成再循環週期。壓力調節器930可經組態以依一預定出口壓力釋放經淨化之調節流體。在一些實施例中，壓力調節器930之出口壓力為大於周圍壓力之固定量。在一些實施例中，壓力調節器930之出口壓力具有相對於周圍壓力之一固定比率。在一些實施例中，壓力調節器930依比周圍壓力高約1英寸至約250英寸水柱之一出口壓力範圍釋放調節流體。在一些實施例中，諸如當調節流體淨化系統916經組態以使經淨化之調節流體直接再循環至槍盒934(如圖9中所繪示)時，壓力調節器930可經組態以依比周圍壓力高約1英寸至約12英寸水柱之一出口壓力範圍釋放經淨化之調節流體。在一替代實施例中，諸如當將調節流體淨化及再循環系統916整合至一系統超壓模組中(如下文及圖10中所描述)時，壓力調節器930可經組態以依比周圍壓力高約12英寸至約250英寸水柱之一出口壓力範圍釋放經淨化之調節流體。在一些實施例中，一或多個壓力釋放閥932可安置於壓力調節器930之下游及槍盒934之前。若存在，則壓力釋放閥932可經組態以依一預定壓力釋放經淨化之調節流體。 Prior to directing the purified conditioning fluid to a gun cartridge 934, one or more pressure regulators 930 can be placed downstream of the gas purifier 920 to complete the recirculation cycle. Pressure regulator 930 can be configured to release the purified conditioning fluid at a predetermined outlet pressure. In some embodiments, the outlet pressure of the pressure regulator 930 is a fixed amount greater than the ambient pressure. In some embodiments, the outlet pressure of the pressure regulator 930 has a fixed ratio relative to one of the ambient pressures. In some embodiments, the pressure regulator 930 releases the conditioning fluid at an outlet pressure range that is about 1 inch to about 250 inches of water column above the ambient pressure. In some embodiments The pressure regulator 930 can be configured to contrast to ambient pressure, such as when the conditioning fluid purification system 916 is configured to recirculate the purified conditioning fluid directly to the gun cartridge 934 (as depicted in Figure 9). An outlet pressure range of about 1 inch to about 12 inches of water is released to release the purified conditioning fluid. In an alternate embodiment, such as when the conditioning fluid purification and recirculation system 916 is integrated into a system overpressure module (as described below and in FIG. 10), the pressure regulator 930 can be configured to contrast The purified conditioning fluid is released at an outlet pressure ranging from about 12 inches to about 250 inches of water. In some embodiments, one or more pressure relief valves 932 can be disposed downstream of pressure regulator 930 and before gun cartridge 934. If present, the pressure relief valve 932 can be configured to release the purified conditioning fluid at a predetermined pressure.

在一些實施例中，調節流體淨化系統916可包含一背壓流迴路936，其可包含一或多個背壓調節器938。背壓流迴路將經淨化之調節流體之部分自氣體淨化器920之輸出端向後分流至壓縮機918之上游的系統之主導管。一般而言，在高產量粒子生產系統之操作期間，背壓流迴路936不在作用中。然而，壓力會偶爾累積於系統內，且將非常高之壓力輸送至槍盒934可損壞高產量粒子生產系統之敏感組件。可藉由將經淨化之調節流體排放至周圍環境中而釋放該壓力；然而，應較佳地避免調節流體之浪費。可藉由分流壓縮機之上游的調節流體之部分(其中壓力一般較低)而回收利用此調節流體。背壓調節器938可經組態以在壓力高於一預定壓力時啟動背壓流迴路936。 In some embodiments, the conditioning fluid purification system 916 can include a back pressure flow circuit 936 that can include one or more back pressure regulators 938. The back pressure flow circuit splits a portion of the purified conditioning fluid from the output of the gas purifier 920 back to the main conduit of the system upstream of the compressor 918. In general, the back pressure flow loop 936 is not active during operation of the high throughput particle production system. However, pressure can occasionally accumulate within the system, and delivering very high pressures to the gun casing 934 can damage sensitive components of high throughput particle production systems. This pressure can be released by discharging the purified conditioning fluid into the surrounding environment; however, waste of conditioning fluid should preferably be avoided. This conditioning fluid can be recycled by the portion of the conditioning fluid upstream of the split compressor where the pressure is generally low. The back pressure regulator 938 can be configured to activate the back pressure flow circuit 936 when the pressure is above a predetermined pressure.

在一高產量粒子生產系統之操作期間，一致產量一般取決於大部分純淨調節流體之一連續流。粒子生產程序期間所引入之工作氣體及供給材料亦頻繁地引入雜質，若容許該等雜質累積於系統中，則該等雜質可使所生產之奈米粒子之品質降級。處理掉廢棄調節流體將使雜質之累積最小化，然而，對連續操作中之一高產量粒子生產系統而言，其不具成本效益。一調節流體淨化及再循環系統可淨化廢棄調節流體且使其再循環返回至系統中以容許具成本效益地連續使用高產量粒子生產系統。較佳地，使引入至奈米粒子生產系統中之調節流體之至少50重量%、至少80重量%、至少90重量%或至少99重量%淨化及再循環。 During operation of a high throughput particle production system, consistent yield generally depends on one of the most continuous flow of pure conditioning fluid. The working gas and the feed material introduced during the particle production process also frequently introduce impurities, and if such impurities are allowed to accumulate in the system, the impurities can degrade the quality of the produced nanoparticle. Disposing of the spent conditioning fluid will minimize the accumulation of impurities, however, it is not cost effective for one of the high throughput particle production systems in continuous operation. A conditioning fluid purification and recirculation system purifies the waste conditioning fluid and recycles it back into the system to allow for cost-effective continuous use of high throughput Particle production system. Preferably, at least 50%, at least 80%, at least 90% or at least 99% by weight of the conditioning fluid introduced into the nanoparticle production system is purified and recycled.

具有恆定超壓之氣體輸送系統與調節流體淨化及再循環系統之整合Integration of a gas delivery system with constant overpressure and a regulated fluid purification and recirculation system

在一高產量粒子生產系統之一較佳實施例中，利用具有恆定超壓之氣體輸送系統與一調節流體淨化及再循環系統兩者。由於氣體輸送系統及調節流體淨化及再循環系統之輸出可具有不同壓力，所以較佳地在將調節流體輸送至槍盒之前整合兩個系統。透過同時使用兩個系統，可依相對於周圍壓力之最小超壓將經淨化且經再循環之調節流體提供至槍盒以限制浪費調節流體、雜質及系統洩漏。此外，同時使用氣體輸送系統及調節流體淨化及再循環系統確保：即使在粒子生產或再循環程序期間存在調節流體之一些損失，但仍會在高產量粒子生產系統之連續使用期間將足夠調節流體供應至系統。 In a preferred embodiment of a high throughput particle production system, both a gas delivery system having a constant overpressure and a conditioning fluid purification and recirculation system are utilized. Since the gas delivery system and the output of the conditioning fluid purification and recirculation system can have different pressures, it is preferred to integrate the two systems prior to delivering the conditioning fluid to the gun box. By using both systems simultaneously, the purified and recirculated conditioning fluid can be supplied to the gun box at a minimum overpressure relative to ambient pressure to limit wasted conditioning fluids, impurities, and system leaks. In addition, the simultaneous use of a gas delivery system and conditioning of the fluid purification and recirculation system ensures that even if there is some loss of conditioning fluid during the particle production or recycling process, it will be sufficient to regulate the fluid during continuous use of the high throughput particle production system. Supply to the system.

圖10繪示與一調節流體淨化及再循環系統1004整合之一系統超壓模組1002之一實例性實施例。在此整合系統中，一吸力產生器1006(較佳為一真空泵或鼓風機)將廢棄調節流體輸送至調節流體淨化系統1004。在將廢棄調節流體輸入至流體淨化系統1004中之後，一壓縮機1008迫使廢棄調節流體進入一氣體淨化器1010。在一些實施例中，一壓力釋放閥1012、一溫度控制模組1014或一過濾器1016各可視情況安置且流體地連接於吸力產生器1006與壓縮機1008之間。 FIG. 10 illustrates an exemplary embodiment of a system overpressure module 1002 integrated with a conditioning fluid purification and recirculation system 1004. In this integrated system, a suction generator 1006 (preferably a vacuum pump or blower) delivers waste conditioning fluid to the conditioning fluid purification system 1004. After the spent conditioning fluid is input to the fluid purification system 1004, a compressor 1008 forces the spent conditioning fluid into a gas purifier 1010. In some embodiments, a pressure relief valve 1012, a temperature control module 1014, or a filter 1016 are each optionally disposed and fluidly coupled between the suction generator 1006 and the compressor 1008.

系統超壓模組1002經組態以依相對於周圍壓力設定之一出口壓力P₄將調節流體輸送至一槍盒1018。在一些實施例中，出口壓力P₄為大於周圍壓力之固定量。在一些實施例中，出口壓力P₄具有相對於周圍壓力之一固定比率。在一些實施例中，系統超壓模組1002依比周圍壓力高約1英寸至約12英寸水柱之一出口壓力範圍將調節流體供應至槍盒1018。當系統超壓模組1002與調節流體淨化及再循環系統整合時，系統超壓模組1002自兩個或兩個以上來源接收調節流體。在一些實施例中，系統超壓模組1002依一壓力P₁自一或多個調節流體儲存槽1020接收調節流體且依一壓力P₅自調節流體淨化及再循環系統1004接收調節流體。在一些實施例中，一或多個調節流體供應閥1022可視情況放置於任何調節流體儲存槽1020與系統超壓模組1002之間。 System overpressure by module 1002 is configured to set one of the ambient pressure regulator outlet pressure P ₄ fluid to the cartridge 1018 with respect to the shot. In some embodiments, the outlet pressure P ₄ is larger than a fixed amount of ambient pressure. In some embodiments, the outlet pressure P ₄ one with respect to the ambient pressure fixed ratio. In some embodiments, system overpressure module 1002 supplies conditioning fluid to gun cartridge 1018 at an outlet pressure range that is about 1 inch to about 12 inches of water column above ambient pressure. When the system overpressure module 1002 is integrated with the conditioning fluid purification and recirculation system, the system overpressure module 1002 receives conditioning fluid from two or more sources. In some embodiments, module 1002 system overpressure by a pressure P ₁ is adjusted from one or more fluid receiving reservoir and adjusting fluid purification and recycling system 1004 receives the fluid by adjusting a self-regulating fluid pressure P ₅ 1020. In some embodiments, one or more conditioning fluid supply valves 1022 can optionally be placed between any of the conditioning fluid storage tanks 1020 and the system overpressure module 1002.

在一些實施例中，系統超壓模組1002包括沿一調節流體供應導管1024串聯安置之一或多個壓力調節器。如圖10中所繪示，壓力調節器1026、1028及1030各包括一控制部分1032、1034及1036及一閥部分1038、1040及1042。在一些實施例中，該等壓力調節器之至少一者使用一基於隔膜之調節機構。較佳地，該基於隔膜之調節機構包括一基於隔膜之定量閥。第一串聯定位之壓力調節器1026依一初始壓力P₁自一或多個調節流體儲存槽1020接收調節流體。控制部分1032使用來自P₁及周圍壓力之輸入來控制閥部分1038以依一出口壓力P₂(諸如比周圍壓力高約50PSI)釋放調節流體。在一些實施例中，一第二串聯定位之壓力調節器1028依一輸出壓力P₂接收調節流體。控制部分1034使用輸入壓力P₂及周圍壓力來控制閥部分1040以依一出口壓力P₃(諸如比周圍壓力高約2PSI)釋放調節流體。 In some embodiments, system overpressure module 1002 includes one or more pressure regulators disposed in series along a regulated fluid supply conduit 1024. As illustrated in FIG. 10, pressure regulators 1026, 1028, and 1030 each include a control portion 1032, 1034, and 1036 and a valve portion 1038, 1040, and 1042. In some embodiments, at least one of the pressure regulators uses a diaphragm-based adjustment mechanism. Preferably, the diaphragm-based adjustment mechanism comprises a diaphragm-based metering valve. Positioning a first series of pressure regulator 1026 according to an initial pressure P ₁ is adjusted from one or more fluid storage tank 1020 receives the conditioning fluid. From the control section 1032 using the input P ₁ and the pressure surrounding the valve portion 1038 to be controlled by adjusting a fluid pressure release outlet P ₂ (such as about 50PSI higher than the ambient pressure). In some embodiments, the positioning of the pressure in a second series regulator 1028 output a regulated fluid pressure P ₂ by receiving. The control section 1034 using the input pressure and the ambient pressure P ₂ is controlled by a valve portion 1040 to the outlet pressure P ₃ (such as about 2PSI higher than the ambient pressure) to release the fluid regulator.

在氣體淨化器1010之下游，一或多個壓力調節器1044可安置於氣體淨化器1010與系統超壓模組1002之間。壓力調節器1044包括一控制部分1046及一閥部分1048。壓力調節器1044可經組態以自氣體淨化器1010接收經淨化之調節流體且依一預定出口壓力釋放經淨化之調節流體。控制部分1046使用來自輸入壓力及周圍壓力之輸入來控制閥部分1048以依一出口壓力P₅(諸如比周圍壓力高約100英寸水柱)釋放調節流體。視情況而定，一壓力釋放閥1050可安置於壓力調節器1044之下游且經組態以在P₅高於一預定臨限值時將經淨化之調節流體釋放至周圍環境中。 Downstream of the gas purifier 1010, one or more pressure regulators 1044 can be disposed between the gas purifier 1010 and the system overpressure module 1002. The pressure regulator 1044 includes a control portion 1046 and a valve portion 1048. The pressure regulator 1044 can be configured to receive the purified conditioning fluid from the gas purifier 1010 and release the purified conditioning fluid at a predetermined outlet pressure. Input from control section 1046 using the ambient pressure and the pressure input to the control valve 1048 to release by a part of the outlet pressure P ₅ (higher than the ambient pressure such as about 100 inches of water) conditioning fluid. As the case may be, a pressure release valve 1050 may be disposed downstream of the pressure regulator 1044 and is configured to warp when P ₅ is above a predetermined threshold to release the cleaned of conditioning fluid to the ambient environment.

調節流體淨化系統1004經由一再循環導管1052將經淨化之調節流體釋放至系統超壓模組1002。再循環導管1052於一接合點1054處與調節流體供應導管1024連接。圖10繪示安置於第二串聯安置之壓力調節器1028與第三串聯安置之壓力調節器1030之間之接合點1054，但接合點可安置於沿調節流體供應導管1024之任何位置處。較佳地，P₅為高於位於接合點1054之上游就近處之調節流體供應導管1024內之壓力之一壓力。例如圖10中所繪示，P₅較佳地大於P₃。 The conditioning fluid purification system 1004 releases the purified conditioning fluid to the system overpressure module 1002 via a recirculation conduit 1052. Recirculation conduit 1052 is coupled to conditioning fluid supply conduit 1024 at a junction 1054. 10 illustrates a junction 1054 disposed between a second series-connected pressure regulator 1028 and a third series-connected pressure regulator 1030, although the junction can be disposed anywhere along the conditioning fluid supply conduit 1024. Preferably, P ₅ is one of the pressures above the pressure within the conditioning fluid supply conduit 1024 located immediately upstream of the junction 1054. For example, as depicted in FIG. 10, P _{5 is} preferably greater than P ₃ .

在圖10所繪示之實施例中，系統超壓模組1002內之一第三串聯安置之壓力調節器1030依取決於P₃及P₅之一壓力接收調節流體。控制部分1036使用輸入壓力及周圍壓力來控制閥部分1042以依一出口壓力P₄釋放調節流體。 The embodiment depicted in FIG. 10, the system pressure in the third module of the overpressure arranged in series, one of the 1002 regulator 1030 according one of the ₃ and ₅ depending on the pressure P P received conditioning fluid. The control section 1036 using the input pressure and the ambient pressure to release the control valve portion 1042 by a regulated fluid outlet pressure P _4.

在一些實施例中，調節流體淨化系統1004可包含一背壓流迴路1056，其可包含一或多個背壓調節器1058。背壓流迴路將經淨化之調節流體之部分自氣體淨化器1010之輸出端分流返回至壓縮機1008之上游的系統之主導管。一般而言，在高產量粒子生產系統之操作期間，背壓流迴路1056不在作用中。背壓調節器1058可經組態以在壓力高於一預定壓力時啟動背壓流迴路1056。 In some embodiments, the conditioning fluid purification system 1004 can include a back pressure flow loop 1056 that can include one or more back pressure regulators 1058. The back pressure flow circuit diverts a portion of the purified conditioning fluid from the output of the gas purifier 1010 back to the main conduit of the system upstream of the compressor 1008. In general, the back pressure flow loop 1056 is not active during operation of the high throughput particle production system. The back pressure regulator 1058 can be configured to activate the back pressure flow circuit 1056 when the pressure is above a predetermined pressure.

在一些實施例中，系統超壓模組1002可視情況包括流體地耦合於最後壓力調節器1030與槍盒1018之間之一或多個獨立壓力釋放閥1060及1062。在一些實施例中，壓力釋放閥1060及1062經組態以在所接收之壓力大於一選定壓力時將氣體排放至周圍環境。在一些實施例中，第一壓力釋放閥1060依壓力P₄自最後串聯壓力調節器1030接收氣體。在一些實施例中，若P₄高於一選定臨限值，則壓力釋放閥1060將氣體排放至周圍環境以減小至槍盒1018之入口壓力。在一些實施例中，該選定臨限值相對高於周圍壓力，使得在正常操作下無需啟動壓力釋放閥1060。在一些實施例中，系統超壓模組1002包括具有不同敏感度且被設定為不同臨限值之複數個壓力釋放閥1060及1062。較佳地，第二串聯安置之壓力釋放閥1062具有比第一串聯安置之壓力釋放閥1060低之一臨限值。 In some embodiments, system overpressure module 1002 can optionally include one or more independent pressure relief valves 1060 and 1062 fluidly coupled between final pressure regulator 1030 and gun cartridge 1018. In some embodiments, pressure relief valves 1060 and 1062 are configured to vent gas to the surrounding environment when the received pressure is greater than a selected pressure. In some embodiments, a first pressure relief valve 1060 by a pressure regulator P ₄ in series from the last 1030 receives gas pressure. In some embodiments, if the P ₄ above a selected threshold value, the pressure relief valve 1060 to the ambient gas emissions to reduce the inlet 1018 to the pressure cartridge gun. In some embodiments, the selected threshold is relatively higher than the ambient pressure such that the pressure relief valve 1060 need not be activated under normal operation. In some embodiments, system overpressure module 1002 includes a plurality of pressure relief valves 1060 and 1062 having different sensitivities and being set to different thresholds. Preferably, the second series-disposed pressure relief valve 1062 has a lower threshold than the first series-connected pressure relief valve 1060.

如所描述般組態，無論由吸力產生器引起之壓力波動或周圍壓力之波動如何，氣體供應系統及調節流體淨化及再循環系統可經整合以依相對周圍壓力之一恆定超壓將經淨化之調節流體供應至槍盒內。由於連續使用中之一高產量粒子生產系統利用可觀調節流體量，所以較佳地具有可依略微高於周圍壓力之一壓力淨化及再循環廢棄調節流體之一系統。 Configured as described, regardless of pressure fluctuations caused by the suction generator or fluctuations in ambient pressure, the gas supply system and the conditioning fluid purification and recirculation system can be integrated to be purified by constant overpressure at one of the relative ambient pressures. The conditioning fluid is supplied to the gun case. Since one of the high-yield particle production systems in continuous use utilizes a considerable amount of regulated fluid, it is preferred to have a system that purifies and recycles the spent conditioning fluid at a pressure slightly above one of the ambient pressures.

過濾器反脈衝Filter back pulse

在一典型粒子生產系統中，藉由使系統輸出流動通過一或多個過濾器元件而將新生產之粒子收集於一收集器件中。當廢棄調節流體通過過濾器元件且被排出或被再循環時，由過濾器元件保留由廢棄調節流體夾帶之粒子。然而，在一高產量粒子生產系統之連續操作期間，過濾器元件可因累積新產生之粒子而變為被阻塞。儘管可藉由於收集器件之下游施加一增大吸力而在一相對較短時間段內維持系統操作及材料產量，但最終需要關閉系統來收集粒子輸出且清潔及/或替換過濾器元件。 In a typical particle production system, newly produced particles are collected in a collection device by flowing the system output through one or more filter elements. When the spent conditioning fluid passes through the filter element and is discharged or recycled, the particles entrained by the waste conditioning fluid are retained by the filter element. However, during continuous operation of a high throughput particle production system, the filter elements may become blocked due to the accumulation of newly generated particles. Although system operation and material throughput can be maintained over a relatively short period of time by applying an increased suction downstream of the collection device, it is ultimately necessary to shut down the system to collect particle output and clean and/or replace the filter elements.

吾人已發現，在一高產量粒子生產系統中，可在不中斷正常系統操作及產量之情況下藉由將一或多個反脈衝施加至過濾器以釋放接著可被收集於一收集容器中之粒子而最小化歸因於阻塞過濾器元件之系統關閉。可使用流體(較佳為調節流體)之一叢發來產生各反脈衝。此叢發可發生於一相對較短時間間隔內且發生於相對於收集器件之操作壓力之一高壓力處。各反脈衝之壓力應足夠高以自過濾器元件去除粒子以容許該等粒子落入至一收集容器中。在一些實施例中，反脈衝可引起過濾器反向，但本發明未必需要使過濾器元件反向。可每隔一定時間間隔、或在一感測器偵測到材料流速下降時或在維持一所要流速所需之吸力增大超過一預定臨限值時手動施加反脈衝。在一些實施例中，該感測器可為一壓力感測器或一流速感測器。在一些實施例中，可使用一單一反脈衝，同時在其他實施例中，反脈衝可發生於一系列之兩個或兩個以上叢發中。 We have found that in a high throughput particle production system, one or more back pulses can be applied to the filter without interruption of normal system operation and throughput for release and then can be collected in a collection container. Particles are minimized due to system shutdown of the occlusion filter element. Each of the back pulses can be generated using a burst of fluid, preferably a conditioning fluid. This burst can occur at a relatively short time interval and at a high pressure relative to one of the operating pressures of the collection device. The pressure of each back pulse should be high enough to remove particles from the filter element to allow the particles to fall into a collection container. In some embodiments, the back pulse The filter can be reversed, but the invention does not necessarily require the filter element to be reversed. The back pulse can be manually applied at regular intervals, or when a sensor detects a decrease in material flow rate or when the suction required to maintain a desired flow rate increases beyond a predetermined threshold. In some embodiments, the sensor can be a pressure sensor or a flow rate sensor. In some embodiments, a single back pulse can be used, while in other embodiments, the back pulse can occur in a series of two or more bursts.

圖11繪示具有一過濾器反脈衝系統之一高產量粒子生產系統之一實施例。在粒子生產期間，新產生之粒子自一電漿槍1102流動通過一淬火腔室1104及冷卻導管1106，且進入一收集器件1108。廢棄調節流體可通過一過濾器元件1110，新生產之粒子累積於過濾器元件1110之表面上。在一些實施例中，大多數或實質上全部之新生產粒子累積於過濾器元件1110之表面上。廢棄調節流體繼續由一吸力產生器1112自收集器件1108汲取，且可被再循環，被排放至周圍環境，或否則被處理掉。吸力產生器1112可為(例如)一真空泵或鼓風機。一旦粒子開始累積於過濾器元件1110上，則可由吸力產生器1112連續增大吸力以維持一固定材料流速。由於吸力產生器1112無法不斷增大吸力，且因為一致流速係所要的，所以一旦材料流速減小至低於一預定臨限值(例如低於所要材料流速之95%，或例如低於所要材料流速之90%，或例如低於所要材料流速之80%)或吸力產生器1112施加高於一預定臨限值之一吸力(例如能力之95%，或例如能力之90%，或例如能力之80%)，則過濾器反脈衝系統可操作以消除壓力累積且恢復正常系統操作。在一些實施例中，可將一感測器114(例如一流速感測器或壓力感測器)固定至吸力產生器1112以觸發過濾器反脈衝之操作。 Figure 11 illustrates an embodiment of a high throughput particle production system having a filter back pulse system. During particle production, newly generated particles flow from a plasma gun 1102 through a quenching chamber 1104 and cooling conduit 1106 and into a collection device 1108. The spent conditioning fluid can pass through a filter element 1110 and the newly produced particles accumulate on the surface of the filter element 1110. In some embodiments, most or substantially all of the newly produced particles accumulate on the surface of the filter element 1110. The spent conditioning fluid continues to be drawn from the collection device 1108 by a suction generator 1112 and can be recirculated, discharged to the surrounding environment, or otherwise disposed of. The suction generator 1112 can be, for example, a vacuum pump or a blower. Once the particles begin to accumulate on the filter element 1110, the suction can be continuously increased by the suction generator 1112 to maintain a fixed material flow rate. Since the suction generator 1112 is unable to continuously increase the suction force and because the uniform flow rate is desired, once the material flow rate is reduced below a predetermined threshold (eg, less than 95% of the desired material flow rate, or for example below the desired material) 90% of the flow rate, or for example less than 80% of the desired material flow rate) or the suction generator 1112 applies one of the suctions above a predetermined threshold (eg 95% of the capacity, or for example 90% of the capacity, or for example the ability 80%), the filter back pulse system is operable to eliminate pressure buildup and resume normal system operation. In some embodiments, a sensor 114 (eg, a flow rate sensor or pressure sensor) can be secured to the suction generator 1112 to trigger the operation of the filter back pulse.

在過濾器反脈衝系統之一實施例中，一反脈衝流體儲存槽1116流體地連接至一第一壓力調節器1118，第一壓力調節器1118繼而流體地連接至一反脈衝貯槽1120。在一些實施例中，反脈衝流體儲存槽1116 含有調節流體，例如氬氣。第一壓力調節器1118經組態以依一預定壓力將調節流體釋放至反脈衝貯槽1120，使得當反脈衝系統未處於操作中時，依該預定壓力用調節流體給反脈衝貯槽1120加壓。在一些實施例中，第一壓力調節器1118將依約80psi至約140psi將調節流體釋放至反脈衝貯槽1120。在一些實施例中，第一壓力調節器1118將依約100psi至約120psi將調節流體釋放至反脈衝貯槽1120。 In one embodiment of the filter back pulse system, a reverse pulse fluid reservoir 1116 is fluidly coupled to a first pressure regulator 1118, which in turn is fluidly coupled to a reverse pulse reservoir 1120. In some embodiments, the reverse pulse fluid storage tank 1116 Contains a conditioning fluid, such as argon. The first pressure regulator 1118 is configured to release the conditioning fluid to the counter-pulse reservoir 1120 at a predetermined pressure such that when the reverse-pulsing system is not in operation, the counter-flush reservoir 1120 is pressurized with the conditioning fluid at the predetermined pressure. In some embodiments, the first pressure regulator 1118 will release conditioning fluid to the counter-pulse reservoir 1120 at about 80 psi to about 140 psi. In some embodiments, the first pressure regulator 1118 will release the conditioning fluid to the counter-pulse reservoir 1120 at about 100 psi to about 120 psi.

在一些實施例中，反脈衝貯槽1120流體地連接至一第二壓力調節器1122，第二壓力調節器1122連接至一反脈衝釋放導管1124。第二壓力調節器經組態以依一預定壓力釋放調節流體。在一些實施例中，第二壓力調節器1122經組態以依與第一壓力調節器1118經組態以釋放調節流體所依之壓力相同之壓力釋放調節流體。在其他實施例中，第二壓力調節器1122經組態以依比第一壓力調節器1118低之一壓力釋放調節流體。反脈衝釋放導管1124經安置使得由反脈衝系統釋放之調節流體在正常系統操作期間沿與廢棄調節流體流相反之軌跡被導引朝向過濾器元件1110。 In some embodiments, the back pulse reservoir 1120 is fluidly coupled to a second pressure regulator 1122 that is coupled to a reverse pulse release conduit 1124. The second pressure regulator is configured to release the conditioning fluid at a predetermined pressure. In some embodiments, the second pressure regulator 1122 is configured to release the conditioning fluid in accordance with the same pressure as the first pressure regulator 1118 is configured to release the conditioning fluid. In other embodiments, the second pressure regulator 1122 is configured to release the conditioning fluid at a lower pressure than the first pressure regulator 1118. The anti-pulse release conduit 1124 is positioned such that the conditioning fluid released by the reverse pulse system is directed toward the filter element 1110 along a trajectory opposite the waste conditioning fluid flow during normal system operation.

在一些實施例中，沿反脈衝釋放導管1124安置一2通直接作用電磁閥1126。2通直接作用電磁閥1126可充當過濾器反脈衝系統之一觸發機構。在接收一信號(例如一手動信號或來自感測器1114之一信號)以開始過濾器反脈衝系統之操作之後，2通直接作用電磁閥1126可將調節流體自加壓反脈衝貯槽1120釋放至反脈衝釋放導管1124，其中可將調節流體輸送至過濾器元件1110。在一些實施例中，2通直接作用電磁閥1126釋放調節流體之一單一脈衝。在其他實施例中，2通直接作用電磁閥1126可釋放一系列之兩個或兩個以上脈衝。脈衝長度可為任何時間長度，但通常為約0.1秒至約0.5秒長。當2通直接作用電磁閥1126釋放一系列之兩個或兩個以上脈衝時，脈衝之間通常存在約0.1秒至約0.5秒之一延遲。 In some embodiments, a 2-way direct acting solenoid valve 1126 is disposed along the counter-pulse release conduit 1124. The 2-way direct acting solenoid valve 1126 can act as a triggering mechanism for the filter back pulse system. Upon receiving a signal (eg, a manual signal or signal from one of the sensors 1114) to begin operation of the filter back pulse system, the 2-way direct acting solenoid valve 1126 can release the conditioning fluid from the pressurized back pulse reservoir 1120 to The pulsed release conduit 1124 can be delivered to the filter element 1110. In some embodiments, the 2-way direct acting solenoid valve 1126 releases a single pulse of one of the conditioning fluids. In other embodiments, the 2-way direct acting solenoid valve 1126 can release a series of two or more pulses. The pulse length can be any length of time, but is typically from about 0.1 second to about 0.5 seconds long. When the 2-way direct acting solenoid valve 1126 releases a series of two or more pulses, there is typically a delay of between about 0.1 seconds and about 0.5 seconds between the pulses.

一旦採用反脈衝系統，則去除累積於過濾器元件1110之表面上之粒子。通常，該等去除粒子落入至一收集容器1128中且可被保留。接著，可在無需關閉高產量粒子生產系統之情況下繼續使用未阻塞之過濾器元件1110。所描述之系統容許粒子生產系統在無需替換收集器件1108內之過濾器元件1110之情況下依每分鐘至少9克、每分鐘至少30克或每分鐘至少60克之一流速連續操作至少6個小時、至少12個小時、至少24個小時、至少48個小時、至少72個小時(3天)、至少336個小時(14天)、至少672個小時(28天)或至少1344個小時(56天)。 Once the back pulse system is employed, the particles accumulated on the surface of the filter element 1110 are removed. Typically, the removed particles fall into a collection container 1128 and can be retained. The unobstructed filter element 1110 can then continue to be used without shutting down the high throughput particle production system. The described system allows the particle production system to operate continuously for at least 6 hours at a flow rate of at least 9 grams per minute, at least 30 grams per minute, or at least 60 grams per minute without the need to replace the filter element 1110 in the collection device 1108, At least 12 hours, at least 24 hours, at least 48 hours, at least 72 hours (3 days), at least 336 hours (14 days), at least 672 hours (28 days), or at least 1344 hours (56 days) .

上文相對於「實施例」所描述之特徵及偏好為不同偏好且並非僅受限於該特定實施例；該等特徵及偏好可與來自其他實施例之特徵自由組合(若技術上可行)，且可形成特徵之較佳組合。 The features and preferences described above with respect to the "embodiments" are different preferences and are not limited to the particular embodiment; such features and preferences may be freely combined with features from other embodiments (if technically feasible), And a preferred combination of features can be formed.

以上描述經呈現以使一般技術者能夠製造及使用本發明，且該描述提供於一專利申請案及其要求之內文中。熟習技術者將易於明白對所描述之實施例之各種修改，且本文中之一般原理可應用於其他實施例。因此，本發明並非意欲受限於所展示之實施例，而是應被給予與本文中所描述之原理及特徵一致之最廣範圍。最後，本申請案中所參考之專利及公開案之全文以引用方式併入本文中。 The above description is presented to enable a person of ordinary skill in the art to make and use the invention, and the description is provided in the context of a patent application and its claims. Various modifications to the described embodiments will be readily apparent to those skilled in the art, and the general principles herein may be applied to other embodiments. Therefore, the present invention is not intended to be limited to the embodiments shown, but rather, Finally, the entire disclosure of the patents and publications which are hereby incorporated by reference herein in its entirety herein in

100‧‧‧電漿系統 100‧‧‧ Plasma System

102‧‧‧電漿槍 102‧‧‧Plastic gun

104‧‧‧材料輸入供給系統 104‧‧‧Material input supply system

106‧‧‧淬火腔室 106‧‧‧Quenching chamber

108‧‧‧冷卻導管 108‧‧‧Cooling duct

110‧‧‧輸出收集系統 110‧‧‧Output collection system

112‧‧‧工作氣體 112‧‧‧Working gas

114‧‧‧調節流體 114‧‧‧Regulating fluid

116‧‧‧槍盒 116‧‧‧gun box

118‧‧‧真空泵/鼓風機 118‧‧‧Vacuum pump/blower

Claims

一種奈米粒子生產系統，其包括：一電漿槍，其包括一凸形電極、一凹形電極及一工作氣體供應器，該工作氣體供應器經組態以沿一渦旋流方向橫跨形成於該凸形電極與該凹形電極之間之一電漿產生區域而輸送一工作氣體；一連續供給系統，其經組態以依每分鐘至少9克之一速率將材料供給至該電漿槍中；一淬火腔室，其定位於該電漿槍之後且包含至少一反應混合物輸入及至少一調節流體輸入；一冷卻導管，其經組態以將一調節流體流中所夾帶之奈米粒子自該淬火腔室傳導至一收集器，其中該冷卻導管包括一層流擾動器；一系統超壓模組，其使該系統中之一壓力維持高於一經量測的周圍壓力；及一調節流體淨化及再循環系統。 A nanoparticle production system comprising: a plasma gun comprising a convex electrode, a concave electrode and a working gas supply, the working gas supply configured to span across a vortex flow direction Forming a working gas formed in a plasma generating region between the convex electrode and the concave electrode; a continuous supply system configured to supply material to the plasma at a rate of at least 9 grams per minute In the gun; a quenching chamber positioned behind the plasma gun and comprising at least one reaction mixture input and at least one conditioning fluid input; a cooling conduit configured to pass the nanoparticle entrained in a conditioning fluid stream The particles are conducted from the quenching chamber to a collector, wherein the cooling conduit includes a flow disruptor; a system overpressure module that maintains a pressure in the system above a measured ambient pressure; and an adjustment Fluid purification and recycling systems.

如請求項1之奈米粒子生產系統，其中該連續供給系統包括一往復構件以在該奈米粒子生產系統之操作期間連續清掃一材料供給供應通道。 The nanoparticle production system of claim 1, wherein the continuous supply system includes a reciprocating member to continuously clean a material supply supply passage during operation of the nanoparticle production system.

如請求項2之奈米粒子生產系統，其中該往復構件依每秒至少2次之一速率往復。 The nanoparticle production system of claim 2, wherein the reciprocating member reciprocates at a rate of at least 2 times per second.

如請求項1之奈米粒子生產系統，其中該連續供給系統包括一脈衝氣體射流以在該奈米粒子生產系統之操作期間連續清掃一材料供給供應通道。 The nanoparticle production system of claim 1, wherein the continuous supply system comprises a pulsed gas jet to continuously sweep a material supply supply passage during operation of the nanoparticle production system.

如請求項1之奈米粒子生產系統，其中該奈米生產系統能夠在無需替換該凸形電極或該凹形電極之情況下操作至少336個小時。 The nanoparticle production system of claim 1, wherein the nano production system is capable of It is necessary to operate the convex electrode or the concave electrode for at least 336 hours.

如請求項1之奈米粒子生產系統，其中該淬火腔室具有一截頭圓錐形形狀且經組態以在操作期間產生具有大於1000之雷諾(Reynolds)數之一紊流。 The nanoparticle production system of claim 1, wherein the quenching chamber has a frustoconical shape and is configured to produce a turbulent flow having a Reynolds number greater than 1000 during operation.

如請求項1之奈米粒子生產系統，其中該層流擾動器包括葉片、擋板、一螺旋螺釘、隆脊或凸塊。 The nanoparticle production system of claim 1, wherein the laminar flow disruptor comprises a blade, a baffle, a screw, a ridge or a bump.

如請求項1之奈米粒子生產系統，其中該粒子生產系統經組態以在該冷卻導管中不發生阻塞之情況下連續操作至少336個小時。 The nanoparticle production system of claim 1, wherein the particle production system is configured to operate continuously for at least 336 hours without clogging in the cooling conduit.

如請求項1之奈米粒子生產系統，其中使該系統中之該壓力維持於比該經量測的周圍壓力高至少1英寸水柱之一壓力處。 The nanoparticle production system of claim 1, wherein the pressure in the system is maintained at a pressure that is at least one inch of water column above the measured ambient pressure.

如請求項1之奈米粒子生產系統，其中使引入至該奈米粒子生產系統中之該調節流體之至少80%淨化及再循環。 The nanoparticle production system of claim 1, wherein at least 80% of the conditioning fluid introduced into the nanoparticle production system is purified and recycled.

一種奈米粒子生產系統，其包括：一電漿槍，其包括一凸形電極、一凹形電極及一工作氣體供應器，該工作氣體供應器經組態以沿一渦旋流方向橫跨形成於該凸形電極與該凹形電極之間之一電漿產生區域而輸送一工作氣體；一連續供給系統，其經組態以依每分鐘至少9克之一速率將材料供給至該電漿槍中；一淬火腔室，其定位於該電漿槍之後且包含至少一反應混合物輸入及至少一調節流體輸入；一冷卻導管，其經組態以將一調節流體流中所夾帶之奈米粒子自該淬火腔室傳導至一收集器，其中該冷卻導管包括一層流擾動器；一系統超壓模組，其使該系統中之一壓力維持高於一經量測的周圍壓力；一粒子收集器件，其包括一過濾器及一泵，該泵經組態以將一吸力施加至該過濾器，使得在該奈米粒子生產系統之操作期間該調節流體被汲取通過該過濾器且奈米粒子收集於該過濾器之一表面上；一反脈衝系統，其經組態以在該奈米粒子生產系統之操作期間將一或多個反脈衝施加至該過濾器以釋放收集於該過濾器之該表面上之奈米粒子；及一調節流體淨化及再循環系統。 A nanoparticle production system comprising: a plasma gun comprising a convex electrode, a concave electrode and a working gas supply, the working gas supply configured to span across a vortex flow direction Forming a working gas formed in a plasma generating region between the convex electrode and the concave electrode; a continuous supply system configured to supply material to the plasma at a rate of at least 9 grams per minute In the gun; a quenching chamber positioned behind the plasma gun and comprising at least one reaction mixture input and at least one conditioning fluid input; a cooling conduit configured to pass the nanoparticle entrained in a conditioning fluid stream The particles are conducted from the quenching chamber to a collector, wherein the cooling conduit includes a flow disruptor; a system overpressure module that maintains a pressure in the system above a measured ambient pressure; a particle collection device comprising a filter and a pump configured to apply a suction force to the filter such that the conditioning fluid is drawn through the filter during operation of the nanoparticle production system and Nanoparticles are collected on a surface of the filter; a back pulse system configured to apply one or more back pulses to the filter during operation of the nanoparticle production system to release the collection Nanoparticles on the surface of the filter; and a conditioning fluid purification and recirculation system.

如請求項11之奈米粒子生產系統，其中該連續供給系統包括一往復構件以在該奈米粒子生產系統之操作期間連續清掃一材料供給供應通道。 The nanoparticle production system of claim 11, wherein the continuous supply system includes a reciprocating member to continuously clean a material supply supply passage during operation of the nanoparticle production system.

如請求項12之奈米粒子生產系統，其中該往復構件依每秒至少2次之一速率往復。 The nanoparticle production system of claim 12, wherein the reciprocating member reciprocates at a rate of at least 2 times per second.

如請求項11之奈米粒子生產系統，其中該連續供給系統包括一脈衝氣體射流以在該奈米粒子生產系統之操作期間連續清掃一材料供給供應通道。 The nanoparticle production system of claim 11, wherein the continuous supply system comprises a pulsed gas jet to continuously sweep a material supply supply passage during operation of the nanoparticle production system.

如請求項11之奈米粒子生產系統，其中該奈米生產系統能夠在無需替換該凸形電極或該凹形電極之情況下操作至少336個小時。 The nanoparticle production system of claim 11, wherein the nano production system is capable of operating for at least 336 hours without replacing the convex electrode or the concave electrode.

如請求項11之奈米粒子生產系統，其中該淬火腔室具有一截頭圓錐形形狀且經組態以在操作期間產生具有大於1000之雷諾數之一紊流。 The nanoparticle production system of claim 11, wherein the quenching chamber has a frustoconical shape and is configured to produce a turbulent flow having a Reynolds number greater than 1000 during operation.

如請求項11之奈米粒子生產系統，其中該層流擾動器包括葉片、擋板、一螺旋螺釘、隆脊或凸塊。 The nanoparticle production system of claim 11, wherein the laminar flow disruptor comprises a blade, a baffle, a screw, a ridge or a bump.

如請求項11之奈米粒子生產系統，其中該粒子生產系統經組態以在該冷卻導管中不發生阻塞之情況下連續操作至少336個小時。 The nanoparticle production system of claim 11, wherein the particle production system is configured to operate continuously for at least 336 hours without clogging in the cooling conduit.

如請求項11之奈米粒子生產系統，其中使該系統中之該壓力維持於比該經量測的周圍壓力高至少1英寸水柱之一壓力處。 The nanoparticle production system of claim 11, wherein the pressure in the system is maintained At a pressure at least one inch of water column above the measured ambient pressure.

如請求項11之奈米粒子生產系統，其中使引入至該奈米粒子生產系統中之該調節流體之至少80%淨化及再循環。 The nanoparticle production system of claim 11, wherein at least 80% of the conditioning fluid introduced into the nanoparticle production system is purified and recycled.

如請求項11之奈米粒子生產系統，其中該電漿槍包括圍繞該電漿槍之一出口環形安置之一冷卻環。 The nanoparticle production system of claim 11, wherein the plasma gun comprises a cooling ring disposed around the outlet of one of the plasma guns.

如請求項12之奈米粒子生產系統，其中該電漿槍包括安置於該電漿槍之一外表面上且接合至該冷卻環之一面板。 The nanoparticle production system of claim 12, wherein the plasma gun comprises a panel disposed on an outer surface of the plasma gun and joined to the cooling ring.

如請求項22之奈米粒子生產系統，其中使該面板在該電漿槍之連續操作期間保持低於900℃達160個小時以上。 The nanoparticle production system of claim 22, wherein the panel is maintained below 900 ° C for more than 160 hours during continuous operation of the plasma gun.

如請求項11之奈米粒子生產系統，其中該連續供給系統包括具有至少1毫米之一最小直徑之複數個材料注射口。 The nanoparticle production system of claim 11, wherein the continuous supply system comprises a plurality of material injection ports having a minimum diameter of at least 1 mm.

如請求項11之奈米粒子生產系統，其中該凸形電極或該凹形電極具鎢襯裡。 The nanoparticle production system of claim 11, wherein the convex electrode or the concave electrode has a tungsten lining.

如請求項11之奈米粒子生產系統，其中粒子於該電漿槍中之平均駐留時間為至少3毫秒。 The nanoparticle production system of claim 11, wherein the particles have an average residence time of at least 3 milliseconds in the plasma gun.

如請求項11之奈米粒子生產系統，其中當一感測器偵測到材料流下降至低於一預定臨限值時，該反脈衝系統經組態以將一或多個反脈衝自動施加至該過濾器。 The nanoparticle production system of claim 11, wherein the back pulse system is configured to automatically apply one or more back pulses when a sensor detects that the material flow drops below a predetermined threshold. To the filter.

如請求項11之奈米粒子生產系統，其中當通過該過濾器之一吸力增大至高於一預定臨限值時，該反脈衝系統經組態以將一或多個反脈衝自動施加至該過濾器。 The nanoparticle production system of claim 11, wherein the back pulse system is configured to automatically apply one or more back pulses to the nanoparticle production system by one of the filters when the suction is increased above a predetermined threshold. filter.

如請求項11之奈米粒子生產系統，其中該反脈衝系統經組態以施加具有100psi至120psi之一壓力之一或多個反脈衝。 The nanoparticle production system of claim 11, wherein the reverse pulse system is configured to apply one or more back pulses having a pressure of one of 100 psi to 120 psi.

如請求項11之奈米粒子生產系統，其中該反脈衝系統經組態以施加包括氬氣之一或多個反脈衝。 The nanoparticle production system of claim 11, wherein the reverse pulse system is configured to apply one or more back pulses comprising argon.

一種用於生產奈米粒子之電漿槍，其包括：一凸形電極及一凹形電極，其中該凸形電極或該凹形電極包括一導電耐熱金屬；一工作氣體供應器，其經組態以沿一渦旋流方向橫跨形成於該凸形電極與該凹形電極之間之一電漿產生區域而輸送一工作氣體；及一面板，其安置於與一冷卻環分離之該電漿槍之一外表面上。 A plasma gun for producing nano particles, comprising: a convex electrode and a concave electrode, wherein the convex electrode or the concave electrode comprises a conductive heat resistant metal; a working gas supply configured to be formed across the convex shape in a vortex flow direction A plasma generating region is provided between the electrode and the concave electrode to deliver a working gas; and a panel is disposed on an outer surface of the plasma gun separated from a cooling ring.

如請求項31之電漿槍，其中粒子於該電漿槍中之平均駐留時間為至少3毫秒。 The plasma gun of claim 31, wherein the particles have an average residence time in the plasma gun of at least 3 milliseconds.

如請求項31之電漿槍，其中該凸形電極或該凹形電極具鎢襯裡。 A plasma gun according to claim 31, wherein the convex electrode or the concave electrode has a tungsten lining.

如請求項31之電漿槍，其中使該面板在該電漿槍之連續操作期間保持低於900℃達160個小時以上。 The plasma gun of claim 31, wherein the panel is maintained below 900 ° C for more than 160 hours during continuous operation of the plasma gun.

一種奈米粒子生產系統，其包括如請求項31至34中任一項之電漿槍。 A nanoparticle production system comprising the plasma gun of any one of claims 31 to 34.

一種奈米粒子生產系統，其包括：一電漿槍；及一連續供給系統，其經組態以依每分鐘至少9克之一速率將材料供給至該電漿槍中。 A nanoparticle production system comprising: a plasma gun; and a continuous supply system configured to supply material to the plasma gun at a rate of at least 9 grams per minute.

如請求項36之奈米粒子生產系統，其中該連續供給系統經組態以在無阻塞之情況下於至少336個小時內將材料供給至該電漿槍。 The nanoparticle production system of claim 36, wherein the continuous supply system is configured to supply material to the plasma gun for at least 336 hours without obstruction.

如請求項36之奈米粒子生產系統，其中該連續供給系統包括多個材料供給供應通道以將供給材料供應至該電漿槍。 The nanoparticle production system of claim 36, wherein the continuous supply system includes a plurality of material supply supply channels to supply the supply material to the plasma gun.

如請求項36之奈米粒子生產系統，其中該連續供給系統包括一往復構件以在該奈米粒子生產系統之操作期間連續清掃一材料供給供應通道。 The nanoparticle production system of claim 36, wherein the continuous supply system includes a reciprocating member to continuously clean a material during operation of the nanoparticle production system Supply supply channel.

如請求項39之奈米粒子生產系統，其中該往復構件依每秒至少2次之一速率往復。 The nanoparticle production system of claim 39, wherein the reciprocating member reciprocates at a rate of at least 2 times per second.

如請求項36之奈米粒子生產系統，其中該連續供給系統包括一脈衝氣體射流以在該奈米粒子生產系統之操作期間連續清掃一材料供給供應通道。 The nanoparticle production system of claim 36, wherein the continuous supply system comprises a pulsed gas jet to continuously sweep a material supply supply channel during operation of the nanoparticle production system.

如請求項36之奈米粒子生產系統，其中該電漿槍包括圍繞該電漿槍之一出口環形安置之一冷卻環。 The nanoparticle production system of claim 36, wherein the plasma gun comprises a cooling ring disposed around the outlet of one of the plasma guns.

如請求項42之奈米粒子生產系統，其中該電漿槍包括安置於該電漿槍之一外表面上且接合至該冷卻環之一面板。 The nanoparticle production system of claim 42, wherein the plasma gun comprises a panel disposed on an outer surface of the plasma gun and joined to the cooling ring.

如請求項43之奈米粒子生產系統，其中使該面板在該電漿槍之連續操作期間保持低於900℃達160個小時以上。 The nanoparticle production system of claim 43, wherein the panel is maintained below 900 ° C for more than 160 hours during continuous operation of the plasma gun.

如請求項36之奈米粒子生產系統，其中該電漿槍進一步包括具有至少1毫米之一最小直徑之複數個材料注射口。 The nanoparticle production system of claim 36, wherein the plasma gun further comprises a plurality of material injection ports having a minimum diameter of at least 1 mm.

如請求項36之奈米粒子生產系統，其中粒子於該電漿槍中之平均駐留時間為至少3毫秒。 The nanoparticle production system of claim 36, wherein the particles have an average residence time in the plasma gun of at least 3 milliseconds.

如請求項36之奈米粒子生產系統，其進一步包括定位於該電漿槍之後以使由該電漿槍生產之奈米粒子與一調節流體分離之一粒子收集器件。 The nanoparticle production system of claim 36, further comprising a particle collection device positioned behind the plasma gun to separate the nanoparticle produced by the plasma gun from a conditioning fluid.

如請求項47之奈米粒子生產系統，其中該粒子生產器件包括一過濾器及一泵，該泵經組態以將一吸力施加至該過濾器，使得在該奈米粒子生產系統之操作期間該調節流體被汲取通過該過濾器且奈米粒子收集於該過濾器之一表面上。 The nanoparticle production system of claim 47, wherein the particle production device comprises a filter and a pump configured to apply a suction to the filter such that during operation of the nanoparticle production system The conditioning fluid is drawn through the filter and the nanoparticles are collected on one surface of the filter.

如請求項48之奈米粒子生產系統，其中該粒子生產器件進一步包括一反脈衝系統，該反脈衝系統經組態以在該奈米粒子生產系統之操作期間將一或多個反脈衝施加至該過濾器以釋放收集於該過濾器之該表面上之奈米粒子。 The nanoparticle production system of claim 48, wherein the particle production device further comprises a back pulse system configured to apply one or more back pulses to the nanoparticle production system during operation of the nanoparticle production system The filter is released for release Nanoparticles on the surface of the filter.

如請求項49之奈米粒子生產系統，其中當一感測器偵測到材料流下降至低於一預定臨限值時，該反脈衝系統經組態以將一或多個反脈衝自動施加至該過濾器。 The nanoparticle production system of claim 49, wherein the back pulse system is configured to automatically apply one or more back pulses when a sensor detects that the material flow drops below a predetermined threshold. To the filter.

如請求項49之奈米粒子生產系統，其中當通過該過濾器之一吸力增大至高於一預定臨限值時，該反脈衝系統經組態以將一或多個反脈衝自動施加至該過濾器。 The nanoparticle production system of claim 49, wherein the backflushing system is configured to automatically apply one or more back pulses to the nanoparticle production system by one of the filters when the suction is increased above a predetermined threshold filter.

如請求項49之奈米粒子生產系統，其中該反脈衝系統經組態以施加具有100psi至120psi之一壓力之一或多個反脈衝。 The nanoparticle production system of claim 49, wherein the reverse pulse system is configured to apply one or more back pulses having a pressure of one of 100 psi to 120 psi.

如請求項49之奈米粒子生產系統，其中該反脈衝系統經組態以施加包括氬氣之一或多個反脈衝。 The nanoparticle production system of claim 49, wherein the back pulse system is configured to apply one or more back pulses comprising argon.

如請求項36之奈米粒子生產系統，其中該電漿槍包括一凸形電極、一凹形電極及一工作氣體供應器，該工作氣體供應器經組態以沿一渦旋流方向橫跨形成於該凸形電極與該凹形電極之間之一電漿產生區域而輸送一工作氣體。 The nanoparticle production system of claim 36, wherein the plasma gun comprises a convex electrode, a concave electrode, and a working gas supply, the working gas supply configured to traverse in a vortex flow direction A working gas is formed by forming a plasma generating region between the convex electrode and the concave electrode.

如請求項54之奈米粒子生產系統，其中該凸形電極或該凹形電極具鎢襯裡。 The nanoparticle production system of claim 54, wherein the convex electrode or the concave electrode has a tungsten lining.

如請求項54之奈米粒子生產系統，其中該工作氣體供應器包括定位於該電漿產生區域之前以產生該渦旋流方向之一注射環。 The nanoparticle production system of claim 54, wherein the working gas supply comprises an injection ring positioned prior to the plasma generating region to produce the direction of the vortex flow.

如請求項56之奈米粒子生產系統，其中該注射環包括複數個注射口。 The nanoparticle production system of claim 56, wherein the injection ring comprises a plurality of injection ports.

如請求項57之奈米粒子生產系統，其中該等注射口圍繞該凸形電極安置於一環形形成物中。 The nanoparticle production system of claim 57, wherein the injection ports are disposed in an annular formation around the convex electrode.

如請求項58之奈米粒子生產系統，其中該等注射口朝向該凸形電極成角度。 The nanoparticle production system of claim 58, wherein the injection ports are angled toward the convex electrode.

如請求項58之奈米粒子生產系統，其中該等注射口遠離該凸形電極成角度。 The nanoparticle production system of claim 58, wherein the injection ports are remote from the convex shape The electrodes are angled.

如請求項54之奈米粒子生產系統，其中該奈米生產系統能夠在無需替換該凸形電極或該凹形電極之情況下操作至少336個小時。 The nanoparticle production system of claim 54, wherein the nano production system is capable of operating for at least 336 hours without replacing the convex electrode or the concave electrode.

如請求項36之奈米粒子生產系統，其進一步包括定位於該電漿槍之後且包含至少一反應混合物輸入及至少一調節流體輸入之一淬火腔室。 The nanoparticle production system of claim 36, further comprising a quenching chamber positioned behind the plasma gun and comprising at least one reaction mixture input and at least one conditioning fluid input.

如請求項62之奈米粒子生產系統，其中該淬火腔室具有一截頭圓錐形形狀且經組態以在操作期間產生具有大於1000之雷諾數之一紊流。 The nanoparticle production system of claim 62, wherein the quenching chamber has a frustoconical shape and is configured to produce a turbulent flow having a Reynolds number greater than 1000 during operation.

如請求項54之奈米粒子生產系統，其進一步包括定位於該電漿槍之後且包含至少一反應混合物輸入及至少一調節流體輸入之一淬火腔室。 The nanoparticle production system of claim 54, further comprising a quenching chamber positioned behind the plasma gun and comprising at least one reaction mixture input and at least one conditioning fluid input.

如請求項64之奈米粒子生產系統，其中該淬火腔室具有一截頭圓錐形形狀且經組態以在操作期間產生具有大於1000之雷諾數之一紊流。 The nanoparticle production system of claim 64, wherein the quenching chamber has a frustoconical shape and is configured to produce a turbulent flow having a Reynolds number greater than 1000 during operation.

如請求項62之奈米粒子生產系統，其進一步包括經組態以將一調節流體流中所夾帶之奈米粒子自該淬火腔室傳導至一收集器之一冷卻導管。 The nanoparticle production system of claim 62, further comprising a cooling conduit configured to conduct nanoparticle entrained in a conditioning fluid stream from the quenching chamber to a collector.

如請求項66之奈米粒子生產系統，其中該冷卻導管包括一層流擾動器。 The nanoparticle production system of claim 66, wherein the cooling conduit comprises a layer of flow disruptors.

如請求項67之奈米粒子生產系統，其中該層流擾動器包括葉片、擋板、一螺旋螺釘、隆脊或凸塊。 The nanoparticle production system of claim 67, wherein the laminar flow disruptor comprises a blade, a baffle, a screw, a ridge or a bump.

如請求項67之奈米粒子生產系統，其中該粒子生產系統經組態以在該冷卻導管中不發生阻塞之情況下連續操作至少6個小時。 The nanoparticle production system of claim 67, wherein the particle production system is configured to operate continuously for at least 6 hours without clogging in the cooling conduit.

如請求項64之奈米粒子生產系統，其進一步包括經組態以將一調節流體流中所夾帶之奈米粒子自該淬火腔室傳導至一收集器之一冷卻導管。 The nanoparticle production system of claim 64, further comprising configured to Nanoparticles entrained in the conditioning fluid stream are conducted from the quenching chamber to a cooling conduit of a collector.

如請求項70之奈米粒子生產系統，其中該冷卻導管包括一層流擾動器。 The nanoparticle production system of claim 70, wherein the cooling conduit comprises a layer of flow disruptor.

如請求項71之奈米粒子生產系統，其中該層流擾動器包括葉片、擋板、一螺旋螺釘、隆脊或凸塊。 The nanoparticle production system of claim 71, wherein the laminar flow disruptor comprises a blade, a baffle, a screw, a ridge or a bump.

如請求項71之奈米粒子生產系統，其中該粒子生產系統經組態以在該冷卻導管中不發生阻塞之情況下連續操作至少336個小時。 The nanoparticle production system of claim 71, wherein the particle production system is configured to operate continuously for at least 336 hours without clogging in the cooling conduit.

如請求項36之奈米粒子生產系統，其進一步包括使該系統中之一壓力維持高於一經量測的周圍壓力之一系統超壓模組。 The nanoparticle production system of claim 36, further comprising a system overpressure module that maintains one of the pressures in the system above a measured ambient pressure.

如請求項74之奈米粒子生產系統，其中使該系統中之該壓力維持於比該經量測的周圍壓力高至少1英寸水柱之一壓力處。 The nanoparticle production system of claim 74, wherein the pressure in the system is maintained at a pressure that is at least one inch of water column above the measured ambient pressure.

如請求項54之奈米粒子生產系統，其進一步包括使該系統中之一壓力維持高於一經量測的周圍壓力之一系統超壓模組。 The nanoparticle production system of claim 54, further comprising a system overpressure module that maintains one of the pressures in the system above a measured ambient pressure.

如請求項62之奈米粒子生產系統，其進一步包括使該系統中之一壓力維持高於一經量測的周圍壓力之一系統超壓模組。 The nanoparticle production system of claim 62, further comprising a system overpressure module that maintains one of the pressures in the system above a measured ambient pressure.

如請求項67之奈米粒子生產系統，其進一步包括使該系統中之一壓力維持高於一經量測的周圍壓力之一系統超壓模組。 The nanoparticle production system of claim 67, further comprising a system overpressure module that maintains one of the pressures in the system above a measured ambient pressure.

如請求項76之奈米粒子生產系統，其進一步包括一調節流體淨化及再循環系統。 The nanoparticle production system of claim 76, further comprising a conditioning fluid purification and recirculation system.

如請求項79之奈米粒子生產系統，其中使引入至該奈米粒子生產系統中之該調節流體之至少80%淨化及再循環。 The nanoparticle production system of claim 79, wherein at least 80% of the conditioning fluid introduced into the nanoparticle production system is purified and recycled.

一種將輸入材料連續供給至一奈米粒子生產系統中之方法，其包括：透過一第一可替換材料供應管將輸入材料供給至一電漿槍中；在通過該第一可替換材料供應管之輸入材料之一流速減小之後，透過一第二可替換材料供應管將輸入材料供給至該電漿槍中；停止輸入材料流動通過該第一可替換材料供應管；及清潔或替換該第一可替換材料供應管，接著透過該第一可替換材料供應管重新初始化輸入材料流入至該電漿槍中。 A method of continuously feeding an input material into a nanoparticle production system, comprising: supplying an input material to a plasma gun through a first replaceable material supply tube After the flow rate of one of the input materials passing through the first replaceable material supply tube is reduced, the input material is supplied to the plasma gun through a second replaceable material supply tube; stopping the input material from flowing through the first An alternate material supply tube; and cleaning or replacing the first replaceable material supply tube, and then reinitializing the input material into the plasma gun through the first replaceable material supply tube.

一種將輸入材料連續供給至一奈米粒子生產系統中之方法，其包括：透過一材料供給供應通道將輸入材料供給至一電漿槍中；及藉由依每分鐘至少9克之一速率迫使供給材料進入該電漿槍而連續清掃該材料供給供應通道。 A method of continuously feeding an input material into a nanoparticle production system, comprising: supplying an input material to a plasma gun through a material supply supply passage; and forcing the supply material by a rate of at least 9 grams per minute The plasma gun is inserted to continuously clean the material supply channel.

如請求項81之方法，其中藉由將一往復構件***至該材料供給供應通道中而迫使供給材料進入該電漿槍。 The method of claim 81, wherein the feed material is forced into the plasma gun by inserting a reciprocating member into the material supply supply passage.

如請求項82之方法，其中該往復構件依每秒至少2次之一速率往復。 The method of claim 82, wherein the reciprocating member reciprocates at a rate of at least 2 times per second.

如請求項81之方法，其中藉由使氣體脈動至該材料供給供應通道中而迫使供給材料進入該電漿槍。 The method of claim 81, wherein the feed material is forced into the plasma gun by pulsing the gas into the material supply supply passage.

一種奈米粒子生產系統，其包括：一電漿槍；一淬火腔室，其定位於該電漿槍之後且包含至少一紊流流體輸入；及一冷卻導管，其經組態以將一調節流體流中所夾帶之奈米粒子自該淬火腔室傳導至一收集器，其中該冷卻導管包括一層流擾動器且該奈米粒子生產系統經組態以在無阻塞之情況下連續操作至少6個小時。 A nanoparticle production system comprising: a plasma gun; a quenching chamber positioned behind the plasma gun and including at least one turbulent fluid input; and a cooling conduit configured to adjust Nanoparticles entrained in the fluid stream are conducted from the quenching chamber to a collector, wherein the cooling conduit includes a layer of flow disruptor and the nanoparticle production system is configured to operate continuously at least 6 without obstruction Hours.

如請求項86之奈米粒子生產系統，其中該淬火腔室具有一截頭圓錐形形狀且經組態以在操作期間產生具有大於1000之雷諾數之一紊流。 The nanoparticle production system of claim 86, wherein the quenching chamber has a frustoconical shape and is configured to produce a turbulent flow having a Reynolds number greater than 1000 during operation.

如請求項86之奈米粒子生產系統，其中該層流擾動器包括葉片、擋板、一螺旋螺釘、隆脊或凸塊。 The nanoparticle production system of claim 86, wherein the laminar flow disruptor comprises a blade, a baffle, a screw, a ridge or a bump.

如請求項86之奈米粒子生產系統，其中該粒子生產系統經組態以在該冷卻導管中不發生阻塞之情況下連續操作至少336個小時。 The nanoparticle production system of claim 86, wherein the particle production system is configured to operate continuously for at least 336 hours without clogging in the cooling conduit.

如請求項86之奈米粒子生產系統，其中該等紊流流體輸入圍繞一反應混合物輸入環形安置。 The nanoparticle production system of claim 86, wherein the turbulent fluid input is placed annularly around a reaction mixture input.

如請求項90之奈米粒子生產系統，其中一或多個紊流流體輸入為一紊流誘發射流。 The nanoparticle production system of claim 90, wherein the one or more turbulent fluid inputs are a turbulent trapped emission stream.

如請求項91之奈米粒子生產系統，其中將該紊流誘發射流導引朝向一反應混合物輸入。 The nanoparticle production system of claim 91, wherein the turbulent inducer stream is directed toward a reaction mixture input.

如請求項91之奈米粒子生產系統，其中將該紊流誘發射流導引遠離一反應混合物輸入。 The nanoparticle production system of claim 91, wherein the turbulent inducer stream is directed away from a reaction mixture input.

如請求項91之奈米粒子生產系統，其中垂直於一反應混合物輸入導引該紊流誘發射流。 The nanoparticle production system of claim 91, wherein the turbulent priming stream is directed perpendicular to a reaction mixture input.

如請求項90之奈米粒子生產系統，其中該等紊流流體輸入形成一互連環。 The nanoparticle production system of claim 90, wherein the turbulent fluid inputs form an interconnected loop.

一種奈米粒子生產系統，其包括：一電漿槍；一粒子收集器件，其包括一過濾器及一泵，該泵經組態以將一吸力施加至該過濾器，使得在該奈米粒子生產系統之操作期間該調節流體被汲取通過該過濾器且奈米粒子收集於該過濾器之一表面上；及一反脈衝系統，其經組態以在該奈米粒子生產系統之操作期間將一或多個反脈衝施加至該過濾器以釋放收集於該過濾器之該表面上之奈米粒子。 A nanoparticle production system comprising: a plasma gun; a particle collection device comprising a filter and a pump configured to apply a suction force to the filter such that the nanoparticle The conditioning fluid is drawn through the filter during operation of the production system and the nanoparticles are collected on a surface of the filter; A reverse pulse system configured to apply one or more back pulses to the filter during operation of the nanoparticle production system to release nanoparticles collected on the surface of the filter.

如請求項96之奈米粒子生產系統，其中當一感測器偵測到材料流下降至低於一預定臨限值時，該反脈衝系統經組態以將一或多個反脈衝自動施加至該過濾器。 The nanoparticle production system of claim 96, wherein the back pulse system is configured to automatically apply one or more back pulses when a sensor detects that the material flow drops below a predetermined threshold. To the filter.

如請求項96之奈米粒子生產系統，其中當通過該過濾器之一吸力增大至高於一預定臨限值時，該反脈衝系統經組態以將一或多個反脈衝自動施加至該過濾器。 The nanoparticle production system of claim 96, wherein the back pulse system is configured to automatically apply one or more back pulses to the nanoparticle production system by one of the filters when the suction is increased above a predetermined threshold filter.

如請求項96之奈米粒子生產系統，其中該反脈衝系統經組態以施加具有100psi至120psi之一壓力之一或多個反脈衝。 The nanoparticle production system of claim 96, wherein the reverse pulse system is configured to apply one or more back pulses having a pressure of one of 100 psi to 120 psi.

如請求項96之奈米粒子生產系統，其中該反脈衝系統經組態以施加包括氬氣之一或多個反脈衝。 The nanoparticle production system of claim 96, wherein the back pulse system is configured to apply one or more back pulses comprising argon.

如請求項96之奈米粒子生產系統，其中該奈米粒子生產系統經組態以在無需替換該過濾器之情況下操作至少6個小時。 The nanoparticle production system of claim 96, wherein the nanoparticle production system is configured to operate for at least 6 hours without replacing the filter.

如請求項96之奈米粒子生產系統，其進一步包括使該系統中之一壓力維持高於一經量測的周圍壓力之一系統超壓模組。 The nanoparticle production system of claim 96, further comprising a system overpressure module that maintains one of the pressures in the system above a measured ambient pressure.

如請求項102之奈米粒子生產系統，其中使該系統中之該壓力維持於比該經量測的周圍壓力高至少1英寸水柱之一壓力處。 The nanoparticle production system of claim 102, wherein the pressure in the system is maintained at a pressure that is at least one inch of water column above the measured ambient pressure.

如請求項96之奈米粒子生產系統，其進一步包括一調節流體淨化及再循環系統。 The nanoparticle production system of claim 96, further comprising a conditioning fluid purification and recirculation system.

如請求項104之奈米粒子生產系統，其中使引入至該奈米粒子生產系統中之該調節流體之至少80%淨化及再循環。 The nanoparticle production system of claim 104, wherein at least 80% of the conditioning fluid introduced into the nanoparticle production system is purified and recycled.

一種奈米粒子生產系統，其包括：一電漿槍；一系統超壓模組，其使該系統中之一壓力維持高於一經量測的周圍壓力；一調節流體淨化及再循環系統；一粒子收集器件，其包括一過濾器及一泵，該泵經組態以將一吸力施加至該過濾器，使得在該奈米粒子生產系統之操作期間該調節流體被汲取通過該過濾器且奈米粒子收集於該過濾器之一表面上；及一反脈衝系統，其經組態以在該奈米粒子生產系統之操作期間將一或多個反脈衝施加至該過濾器以釋放收集於該過濾器之該表面上之奈米粒子。 A nanoparticle production system comprising: a plasma gun; a system overpressure module that maintains a pressure in the system above a measured value Ambient pressure; a conditioning fluid purification and recirculation system; a particle collection device comprising a filter and a pump configured to apply a suction force to the filter such that the nanoparticle production system During the operation, the conditioning fluid is drawn through the filter and the nanoparticles are collected on a surface of the filter; and a back pulse system configured to operate during the operation of the nanoparticle production system A plurality of back pulses are applied to the filter to release the nanoparticles collected on the surface of the filter.

如請求項106之奈米粒子生產系統，其中當一感測器偵測到材料流下降至低於一預定臨限值時，該反脈衝系統經組態以將一或多個反脈衝自動施加至該過濾器。 The nanoparticle production system of claim 106, wherein the back pulse system is configured to automatically apply one or more back pulses when a sensor detects that the material flow drops below a predetermined threshold. To the filter.

如請求項106之奈米粒子生產系統，其中當通過該過濾器之一吸力增大至高於一預定臨限值時，該反脈衝系統經組態以將一或多個反脈衝自動施加至該過濾器。 The nanoparticle production system of claim 106, wherein the back pulse system is configured to automatically apply one or more back pulses to the nanoparticle production system by one of the filters when the suction is increased above a predetermined threshold filter.

如請求項106之奈米粒子生產系統，其中該反脈衝系統經組態以施加具有100psi至120psi之一壓力之一或多個反脈衝。 The nanoparticle production system of claim 106, wherein the back pulse system is configured to apply one or more back pulses having a pressure of one of 100 psi to 120 psi.

如請求項106之奈米粒子生產系統，其中該反脈衝系統經組態以施加包括氬氣之一或多個反脈衝。 The nanoparticle production system of claim 106, wherein the back pulse system is configured to apply one or more back pulses comprising argon.

如請求項106之奈米粒子生產系統，其中該奈米粒子生產系統經組態以在無需替換該過濾器之情況下操作至少6個小時。 The nanoparticle production system of claim 106, wherein the nanoparticle production system is configured to operate for at least 6 hours without replacing the filter.

如請求項106之奈米粒子生產系統，其中使該系統中之該壓力維持於比該經量測的周圍壓力高至少1英寸水柱之一壓力處。 The nanoparticle production system of claim 106, wherein the pressure in the system is maintained at a pressure that is at least one inch of water column above the measured ambient pressure.

如請求項106之奈米粒子生產系統，其中使引入至該奈米粒子生產系統中之該調節流體之至少80%淨化及再循環。 The nanoparticle production system of claim 106, wherein at least 80% of the conditioning fluid introduced into the nanoparticle production system is purified and recycled.