TW201443994A - Plasma processing method and plasma processing device - Google Patents

Plasma processing method and plasma processing device Download PDF

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TW201443994A
TW201443994A TW103105352A TW103105352A TW201443994A TW 201443994 A TW201443994 A TW 201443994A TW 103105352 A TW103105352 A TW 103105352A TW 103105352 A TW103105352 A TW 103105352A TW 201443994 A TW201443994 A TW 201443994A
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plasma
processed
processing
film
frequency
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TW103105352A
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TWI606514B (en
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Masafumi Urakawa
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges

Abstract

An object of the invention is to maintain the uniformity of a processing target surface of a processing target body without requiring configuration changes. A plasma processing method includes a gas supply step, a power supply step, and an etching step. In the gas supply step, a process gas is supplied to the interior of a processing chamber in which a processing target body is disposed. In the power supply step, a plasma generation power with a frequency of 100 MHz to 150 MHz, which functions as the power for generating a plasma of the process gas supplied to the interior of the processing chamber, and a bias power which has a lower frequency than the plasma generation power, are supplied to the chamber. In the etching step, the processing target body is etched by the plasma of the process gas while the bias power is pulse-modulated to produce a duty ratio of 10% to 70% and a frequency of 5 kHz to 20 kHz.

Description

電漿處理方法及電漿處理裝置 Plasma processing method and plasma processing device

本發明之各種面向及實施形態係關於一種電漿處理方法及電漿處理裝置。 Various aspects and embodiments of the present invention relate to a plasma processing method and a plasma processing apparatus.

半導體之製造程序中，廣泛使用實行以薄膜之沉積或蝕刻等為目的之電漿處理之電漿處理裝置。為獲得高性能且高功能之半導體，宜對被處理體之被處理面進行均一之電漿處理。 In the manufacturing process of a semiconductor, a plasma processing apparatus which performs plasma processing for the purpose of depositing or etching a thin film or the like is widely used. In order to obtain a high-performance and high-performance semiconductor, it is preferable to perform uniform plasma treatment on the treated surface of the object to be processed.

近年來之電漿處理中，使用利用頻率相對較高之高頻電力產生處理氣體之電漿之電漿處理裝置。此電漿處理裝置作為電漿產生用電力供給頻率例如為100MHz之高頻電力。且電漿處理裝置作為用來將電漿中之離子導入被處理體之偏壓用電力，供給頻率低於電漿產生用電力之高頻電力。 In recent plasma processing, a plasma processing apparatus that generates plasma of a processing gas using high-frequency power having a relatively high frequency is used. This plasma processing apparatus supplies high frequency electric power having a frequency of, for example, 100 MHz as a power generation source for plasma generation. Further, the plasma processing apparatus is used as a bias power for introducing ions in the plasma into the object to be processed, and supplies high-frequency power having a frequency lower than that of the plasma generating power.

又，如此之電漿處理裝置中，已知對應被處理體之中央部之電漿密度大於對應被處理體之周緣部之電漿密度，故將用來使電漿密度均一化之構件設於被處理體之載置台。例如專利文獻1中揭示：於載置台之內部對應被處理體之中央部之區域設置介電層，以介電層減弱自被處理體之中央部對電漿所供給之電場，藉此使電漿密度均一化。 Further, in such a plasma processing apparatus, it is known that a plasma density corresponding to a central portion of the object to be processed is larger than a plasma density of a peripheral portion of the object to be processed, so that a member for uniformizing the plasma density is provided. The mounting table of the object to be processed. For example, Patent Document 1 discloses that a dielectric layer is provided in a region corresponding to a central portion of a workpiece in a mounting table, and a dielectric layer is used to weaken an electric field supplied from a central portion of the workpiece to a plasma, thereby making electricity The pulp density is uniform.

【先前技術文獻】 [Previous Technical Literature]

【專利文獻】 [Patent Literature]

【專利文獻1】日本特開2008-243973號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-243973

然而，習知技術中，未考慮到使構成不需變更，同時維持被處理體之被處理面之均一性。亦即，習知技術中，於對應被處理體之中央部之區域設置介電層，藉此使電漿密度均一化，故可維持被處理體之被處理面之均一性，但為設置介電層需重新變更處理裝置內之構成。變更如此之處理裝置內之構成後，即有構成複雜化，或製造成本提高之虞。 However, in the prior art, it is not considered that the configuration is not required to be changed, and the uniformity of the processed surface of the object to be processed is maintained. In other words, in the prior art, a dielectric layer is provided in a region corresponding to the central portion of the object to be processed, thereby uniformizing the plasma density, so that the uniformity of the processed surface of the object to be processed can be maintained. The electrical layer needs to change the composition of the processing device again. When the configuration in such a processing device is changed, the configuration is complicated or the manufacturing cost is increased.

依本發明之一面向之電漿處理方法包含氣體供給程序、電力供給程序、與蝕刻程序。氣體供給程序對配置有被處理體之處理容器之內部供給處理氣體。電力供給程序供給用來產生對處理容器之內部所供給之處理氣體之電漿，頻率為100MHz~150MHz之電漿產生用電力，與頻率低於電漿產生用電力之偏壓用電力。蝕刻程序一面對該偏壓用電力施以脈衝調變，使其負載比成為10%~70%，且頻率為5kHz~20kHz，一面藉由該處理氣體之電漿蝕刻被處理體。 A plasma processing method according to one aspect of the present invention includes a gas supply program, a power supply program, and an etching process. The gas supply program supplies the processing gas to the inside of the processing container in which the object to be processed is placed. The power supply program supplies a plasma for generating a processing gas supplied to the inside of the processing container, a plasma generating power having a frequency of 100 MHz to 150 MHz, and a bias power having a frequency lower than that of the plasma generating power. The etching process pulsates the bias power so that the load ratio becomes 10% to 70%, and the frequency is 5 kHz to 20 kHz, and the object to be processed is etched by the plasma of the processing gas.

依本發明之各種面向及實施形態，可實現一種電漿處理方法及電漿處理裝置，以不變更構成而維持被處理體之被處理面之均一性之方式，擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 According to various aspects and embodiments of the present invention, it is possible to realize a plasma processing method and a plasma processing apparatus which maintain the uniformity of the processed surface of the object to be processed without changing the configuration, and the setting range of the expansion processing conditions is also That is, the processing device and the margin of the processing (allowable range) allow the device to continuously process.

W‧‧‧晶圓 W‧‧‧ wafer

2‧‧‧電漿處理裝置 2‧‧‧ Plasma processing unit

3‧‧‧載置台 3‧‧‧ mounting table

21a‧‧‧上部室 21a‧‧‧Upper room

21b‧‧‧下部室 21b‧‧‧low room

21‧‧‧處理容器 21‧‧‧Processing container

22‧‧‧排氣口 22‧‧‧Exhaust port

23‧‧‧排氣管 23‧‧‧Exhaust pipe

24‧‧‧排氣裝置 24‧‧‧Exhaust device

25‧‧‧送入送出口 25‧‧‧Send in and out

26‧‧‧閘閥 26‧‧‧ gate valve

27‧‧‧支持部 27‧‧‧Support Department

28‧‧‧檔板 28‧‧‧Baffle

31a‧‧‧支持台 31a‧‧‧Support Desk

31‧‧‧下部電極 31‧‧‧ lower electrode

32‧‧‧介電層 32‧‧‧Dielectric layer

33‧‧‧電極膜 33‧‧‧Electrode film

41、42‧‧‧絕緣構件 41, 42‧‧‧Insulating components

43‧‧‧冷媒流路 43‧‧‧Refrigerant flow path

44a‧‧‧貫通孔 44a‧‧‧through hole

44‧‧‧氣體流路 44‧‧‧ gas flow path

45a‧‧‧第1高頻電源 45a‧‧‧1st high frequency power supply

45b‧‧‧第2高頻電源 45b‧‧‧2nd high frequency power supply

46a、46b‧‧‧匹配器 46a, 46b‧‧‧matcher

47‧‧‧聚焦環 47‧‧‧ Focus ring

51‧‧‧上部電極 51‧‧‧Upper electrode

52a‧‧‧氣體擴散室 52a‧‧‧Gas diffusion chamber

52‧‧‧氣體供給孔 52‧‧‧ gas supply hole

53‧‧‧氣體導入管 53‧‧‧ gas introduction tube

55‧‧‧處理氣體供給源 55‧‧‧Processing gas supply

56a、56b‧‧‧多極化磁石 56a, 56b‧‧‧Multipolar Magnets

100‧‧‧程序控制器 100‧‧‧Program controller

101‧‧‧使用者介面 101‧‧‧User interface

102‧‧‧記憶部 102‧‧‧Memory Department

201、401b‧‧‧多晶矽膜 201, 401b‧‧‧ polysilicon film

202、301、401a‧‧‧SiO2膜 202, 301, 401a‧‧ SiO2 film

302、402‧‧‧有機膜 302, 402‧‧‧ organic film

401‧‧‧疊層膜 401‧‧‧Laminated film

圖1係顯示適用於依本實施形態之電漿處理方法之電漿處理裝置之概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing a plasma processing apparatus applied to a plasma processing method according to the present embodiment.

圖2A係顯示依本實施形態之被處理體之構造例(其1)之剖面圖。 Fig. 2A is a cross-sectional view showing a structural example (1) of the object to be processed according to the embodiment.

圖2B係顯示依本實施形態之被處理體之構造例(其2)之剖面圖。 Fig. 2B is a cross-sectional view showing a structural example (the second) of the object to be processed according to the embodiment.

圖2C係顯示依本實施形態之被處理體之構造例(其3)之剖面圖。 Fig. 2C is a cross-sectional view showing a structural example (3) of the object to be processed according to the embodiment.

圖3係顯示以依本實施形態之電漿處理裝置進行之電漿處理方法之處理之流程之一例之流程圖。 Fig. 3 is a flow chart showing an example of the flow of the processing of the plasma processing method by the plasma processing apparatus according to the embodiment.

圖4A(a)、(b)係顯示依本實施形態之蝕刻程序之一例圖。 4A(a) and 4(b) are views showing an example of an etching procedure according to the embodiment.

圖4B係顯示依本實施形態之蝕刻程序之一例圖。 Fig. 4B is a view showing an example of an etching procedure according to the embodiment.

圖5A係顯示關於比較例1及實施例1~3之處理結果圖。 Fig. 5A is a view showing the results of processing in Comparative Example 1 and Examples 1 to 3.

圖5B係顯示負載比及頻率對中央領先分布造成之影響之驗證結果(其1)圖。 Fig. 5B is a graph showing the result of verification (1) of the influence of the load ratio and frequency on the central leading distribution.

圖6係顯示關於比較例2及實施例4、5之處理結果圖。 Fig. 6 is a view showing the processing results of Comparative Example 2 and Examples 4 and 5.

圖7A係顯示關於比較例3及實施例6之處理結果圖。 Fig. 7A is a view showing the results of processing in Comparative Example 3 and Example 6.

圖7B係顯示關於比較例3及實施例6之處理結果圖。 Fig. 7B is a view showing the processing results of Comparative Example 3 and Example 6.

圖8A係顯示負載比及頻率對中央領先分布造成之影響之驗證結果(其2)圖。 Fig. 8A is a graph showing the result of verification (2) of the influence of the load ratio and frequency on the central leading distribution.

圖8B係顯示負載比及頻率對中央領先分布造成之影響之驗證結果(其2)圖。 Fig. 8B is a graph showing the result of verification (2) of the effect of the load ratio and frequency on the central leading distribution.

圖9A係顯示依實施例7~10之處理結果圖。 Fig. 9A is a view showing the results of the treatment according to Examples 7 to 10.

圖9B係顯示依實施例7~10之處理結果圖。 Fig. 9B is a graph showing the results of the treatment according to Examples 7 to 10.

圖10A係顯示依實施例11~實施例14之處理結果圖。 Fig. 10A is a view showing the results of the processing according to the eleventh embodiment to the fourteenth embodiment.

圖10B係顯示依實施例11~實施例14之處理結果圖。 Fig. 10B is a view showing the results of the processing according to the eleventh embodiment to the fourteenth embodiment.

以下，參照圖式詳細說明關於各種實施形態。又，各圖式中對同一或相當之部分附予同一符號。 Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or equivalent parts are attached to the same symbols.

依本實施形態之電漿處理方法於一實施形態中，包含： 氣體供給程序，對配置有被處理體之處理容器之內部供給處理氣體；電力供給程序，供給如下之電力：電漿產生用電力，用來產生對該處理容器之內部所供給之處理氣體的電漿，頻率為100MHz~150MHz；與偏壓用電力，其頻率低於該電漿產生用電力；及蝕刻程序，一面對該偏壓用電力施以脈衝調變，使其負載比成為10%~70%，且頻率為5kHz~20kHz，一面藉由該處理氣體之電漿蝕刻被處理體。 In one embodiment, the plasma processing method according to the embodiment includes: The gas supply program supplies the processing gas to the inside of the processing container in which the object to be processed is placed, and the power supply program supplies electric power for plasma generation to generate electricity for the processing gas supplied to the inside of the processing container. The slurry has a frequency of 100 MHz to 150 MHz; the frequency of the bias voltage is lower than the power for generating the plasma; and the etching process is performed by applying a pulse modulation to the bias power to make the load ratio 10%. ~70%, and the frequency is 5 kHz to 20 kHz, and the object to be processed is etched by the plasma of the processing gas.

依本實施形態之電漿處理方法於一實施形態中，該蝕刻程序中，一面對該偏壓用電力施以脈衝調變，使其負載比成為40%~60%，且頻率為5kHz~10kHz，一面藉由該處理氣體之電漿蝕刻被處理體。 According to the plasma processing method of the present embodiment, in the etching process, the bias power is pulse-modulated so that the duty ratio is 40% to 60% and the frequency is 5 kHz. At 10 kHz, the object to be processed is etched by the plasma of the process gas.

依本實施形態之電漿處理方法於一實施形態中，該偏壓用電力之頻率為0.4kHz~13.56MHz。 According to the plasma processing method of the present embodiment, in one embodiment, the frequency of the bias power is 0.4 kHz to 13.56 MHz.

依本實施形態之電漿處理方法於一實施形態中，該被處理體包含多晶矽膜與SiO2膜或有機膜，該蝕刻程序中，以該SiO2膜或該有機膜為遮罩，藉由該處理氣體之電漿蝕刻該多晶矽膜。 In one embodiment of the plasma processing method according to the embodiment, the object to be processed includes a polycrystalline germanium film and an SiO 2 film or an organic film. In the etching process, the SiO 2 film or the organic film is used as a mask. The plasma of the process gas etches the polysilicon film.

依本實施形態之電漿處理方法於一實施形態中，該被處理體包含SiO2膜與有機膜或多晶矽膜，該蝕刻程序中，以該有機膜或該多晶矽膜為遮罩，藉由該處理氣體之電漿蝕刻該SiO2膜。 In one embodiment of the plasma processing method according to the embodiment, the object to be processed includes an SiO 2 film, an organic film or a polysilicon film, and the organic film or the polysilicon film is used as a mask in the etching process. The plasma of the processing gas etches the SiO 2 film.

依本實施形態之電漿處理方法於一實施形態中，該被處理體包含SiO2膜與多晶矽膜之疊層膜、及有機膜，該蝕刻程序中，以該有機膜為遮罩，藉由該處理氣體之電漿蝕刻該疊層膜。 According to one embodiment of the plasma processing method of the present embodiment, the object to be processed includes a laminated film of a SiO 2 film and a polycrystalline germanium film, and an organic film, wherein the organic film is masked by the etching process. The plasma of the process gas etches the laminated film.

依本實施形態之電漿處理方法於一實施形態中，該疊層膜至少堆疊24層以上。 According to the plasma processing method of the present embodiment, in one embodiment, the laminated film is stacked at least 24 layers or more.

依本實施形態之電漿處理方法於一實施形態中，該處理氣體包含溴或氯、氟、與氧。 In one embodiment of the plasma processing method of the present embodiment, the processing gas contains bromine or chlorine, fluorine, and oxygen.

依本實施形態之電漿處理方法於一實施形態中，該處理氣體更包含氬。 In one embodiment of the plasma processing method of the present embodiment, the processing gas further comprises argon.

依本實施形態之電漿處理方法於一實施形態中，該處理氣體包含CF類氣體。 According to the plasma processing method of the present embodiment, in one embodiment, the processing gas contains a CF-based gas.

依本實施形態之電漿處理方法於一實施形態中，該偏壓用電力為500W~3000W。 According to the plasma processing method of the present embodiment, in one embodiment, the bias power is 500 W to 3000 W.

依本實施形態之電漿處理方法於一實施形態中，以該蝕刻程序蝕刻之該被處理體之中心位置之蝕刻速率，與自該被處理體之中心位置沿徑向朝周緣側恰偏離既定距離之位置之蝕刻速率之差為-1.2(nm/min)~1.2(nm/min)。 According to the plasma processing method of the present embodiment, in the embodiment, the etching rate of the center position of the object to be processed which is etched by the etching process is exactly offset from the center position of the object to be processed in the radial direction toward the peripheral side. The difference in etching rate between the positions of the distance is -1.2 (nm/min) to 1.2 (nm/min).

依本實施形態之電漿處理裝置於一實施形態中包含：處理容器，配置有被處理體；排氣部，用來使該處理容器之內部減壓；氣體供給部，用來對該處理容器之內部供給處理氣體；及控制部，實行下列程序：氣體供給程序，對該處理容器之內部供給處理氣體；電力供給程序，供給如下之電力：電漿產生用電力，用來產生對該處理容器之內部所供給之處理氣體的電漿，頻率為100MHz~150MHz；與偏壓用電力，其頻率低於該電漿產生用電力；及 蝕刻程序，一面對該偏壓用電力施以脈衝調變，使其負載比成為10%~70%，且頻率為5kHz~20kHz，一面藉由該處理氣體之電漿蝕刻被處理體。 In one embodiment, the plasma processing apparatus according to the embodiment includes a processing container in which a target object is disposed, an exhaust unit for decompressing the inside of the processing container, and a gas supply unit for the processing container. The control unit supplies the processing gas, and the control unit executes a gas supply program to supply a processing gas to the inside of the processing container, and a power supply program that supplies the following electric power: plasma generating electric power for generating the processing container. The plasma of the processing gas supplied therein has a frequency of 100 MHz to 150 MHz; and the power for biasing is lower than the power for generating the plasma; In the etching process, the bias power is pulse-modulated so that the duty ratio is 10% to 70%, and the frequency is 5 kHz to 20 kHz, and the object to be processed is etched by the plasma of the processing gas.

圖1係顯示適用於依本實施形態之電漿處理方法之電漿處理裝置之概略剖面圖。圖1中，顯示RIE(Reactive Ion Etching)電漿處理裝置之一例。此電漿處理裝置2包含：處理容器21，例如內部由作為密封空間之真空腔室構成；載置台3，配置於此處理容器21內之底面中央；及上部電極51，設於載置台3之上方而與此載置台3對向。 Fig. 1 is a schematic cross-sectional view showing a plasma processing apparatus applied to a plasma processing method according to the present embodiment. In Fig. 1, an example of a RIE (Reactive Ion Etching) plasma processing apparatus is shown. The plasma processing apparatus 2 includes a processing container 21 which is internally constituted by a vacuum chamber as a sealed space, a mounting table 3 disposed at the center of the bottom surface of the processing container 21, and an upper electrode 51 provided on the mounting table 3. The upper side is opposed to the mounting table 3.

處理容器21由小徑之圓筒狀之上部室21a，與大徑之圓筒狀之下部室21b構成。上部室21a與下部室21b相互連通，處理容器21整體氣密地構成。於上部室21a之上部，配置上部電極51，於上部室21a內，收納載置台3等。於下部室21b內，收納支持載置台3之支持部27及排氣空間。下部室21b底面之排氣口22經由排氣空間排氣管23連接排氣裝置24。此排氣裝置24連接未圖示之壓力調整部，此壓力調整部藉由來自未圖示之控制部之信號使處理容器21內整體排氣，維持於所希望之真空度。排氣裝置24係用來使處理容器21之內部減壓之排氣部之一例。另一方面，於上部室21a之側面，設有作為被處理體之晶圓W之送入送出口25，此送入送出口25可由閘閥26開合。處理容器21以鋁等導電性構件構成而接地。 The processing container 21 is composed of a cylindrical upper chamber 21a having a small diameter and a cylindrical lower chamber 21b having a large diameter. The upper chamber 21a and the lower chamber 21b communicate with each other, and the entire processing container 21 is airtight. The upper electrode 51 is disposed above the upper chamber 21a, and the mounting table 3 and the like are housed in the upper chamber 21a. The support portion 27 supporting the mounting table 3 and the exhaust space are housed in the lower chamber 21b. The exhaust port 22 on the bottom surface of the lower chamber 21b is connected to the exhaust device 24 via the exhaust space exhaust pipe 23. The exhaust unit 24 is connected to a pressure adjusting unit (not shown). The pressure adjusting unit exhausts the entire inside of the processing container 21 by a signal from a control unit (not shown) to maintain a desired degree of vacuum. The exhaust unit 24 is an example of an exhaust unit for decompressing the inside of the processing container 21. On the other hand, a feed-in/out port 25 of the wafer W as a target object is provided on the side surface of the upper chamber 21a, and the feed-in/out port 25 can be opened and closed by the gate valve 26. The processing container 21 is made of a conductive member such as aluminum and is grounded.

載置台3呈將例如作為鋁所構成之導電體構件之電漿產生用下部電極31，與包覆下部電極31之上表面而形成之介電層32自下方依此順序堆疊之構造，電極膜33埋入介電層32。介電層32與電極膜33構成靜電吸盤。且載置台3包含絕緣構件41、42，絕緣構件41包覆下部電極31之側周面，絕緣構件42包覆下部電極31之底面，下部電極31隔著此等絕緣構件41、42由設置在支持板27上的支持台31a固定，呈相對於處理容器21充分地電浮接之狀態。 The mounting table 3 has a structure in which a lower electrode 31 for plasma generation, for example, a conductor member made of aluminum, and a dielectric layer 32 formed to cover the upper surface of the lower electrode 31 are stacked in this order from the bottom, and the electrode film is formed. 33 is buried in the dielectric layer 32. The dielectric layer 32 and the electrode film 33 constitute an electrostatic chuck. Further, the mounting table 3 includes insulating members 41 and 42. The insulating member 41 covers the side peripheral surface of the lower electrode 31, the insulating member 42 covers the bottom surface of the lower electrode 31, and the lower electrode 31 is disposed between the insulating members 41 and 42 via the insulating members 41 and 42. The support table 31a on the support plate 27 is fixed and is in a state of being sufficiently electrically floated with respect to the processing container 21.

於下部電極31內，形成用來使冷媒流通之冷媒流路43，冷媒於此冷媒流路43流動，藉此冷卻下部電極31，將被載置於作為介電層32之上表面之載置面之晶圓W冷卻至所希望之溫度。 In the lower electrode 31, a refrigerant flow path 43 for circulating a refrigerant is formed, and the refrigerant flows through the refrigerant flow path 43, whereby the lower electrode 31 is cooled and placed on the upper surface of the dielectric layer 32. The wafer W is cooled to the desired temperature.

且於介電層32，設有將用來提高載置面與晶圓W背面之間之導熱性之熱傳導性背面氣體(導熱氣體)加以釋放之貫通孔44a。此貫通孔44a與形成於下部電極31內等之氣體流路44連通，經由此氣體流路44釋放由未圖示之氣體供給部供給之例如氦(He)等背面氣體。 Further, the dielectric layer 32 is provided with a through hole 44a for releasing a thermally conductive back surface gas (heat conductive gas) for improving the thermal conductivity between the mounting surface and the back surface of the wafer W. The through hole 44a communicates with the gas flow path 44 formed in the lower electrode 31 or the like, and the back gas such as helium (He) supplied from a gas supply unit (not shown) is released through the gas flow path 44.

且下部電極31分別經由匹配器46a、46b連接供給例如頻率為100MHz~150MHz之高頻電力之第1高頻電源45a，與供給例如頻率低於第1高頻電源45a之0.4kHz~13.56MHz之高頻電力之第2高頻電源45b。由第1高頻電源45a供給之高頻電力扮演後述使處理氣體電漿化之角色，由第2高頻電源45b供給之高頻電力扮演對晶圓W施加偏壓電力，藉此將電漿中之離子導入晶圓W表面之角色。於以下，為便於說明，有時稱由第1高頻電源45a供給之高頻電力為電漿產生用電力，稱由第2高頻電源45b供給之高頻電力為偏壓用電力。 Further, the lower electrode 31 is connected to the first high-frequency power source 45a for supplying high-frequency power of, for example, a frequency of 100 MHz to 150 MHz via the matching units 46a and 46b, and is supplied with, for example, 0.4 kHz to 13.56 MHz which is lower in frequency than the first high-frequency power source 45a. The second high frequency power supply 45b of high frequency power. The high-frequency power supplied from the first high-frequency power source 45a plays a role of plasma-forming the processing gas, and the high-frequency power supplied from the second high-frequency power source 45b acts to apply bias current to the wafer W, thereby plasma The role of ions in the surface of the wafer W. In the following, for convenience of explanation, the high-frequency power supplied from the first high-frequency power source 45a is the power for generating plasma, and the high-frequency power supplied from the second high-frequency power source 45b is called the bias power.

且於下部電極31之上表面外周部配置聚焦環47，俾包圍介電層32。聚焦環47扮演調整晶圓W之周緣部之外方區域之電漿狀態之角色，例如扮演使電漿較晶圓W廣闊，提升晶圓面內之蝕刻速度之均一性之角色。 A focus ring 47 is disposed on the outer peripheral portion of the upper surface of the lower electrode 31, and the dielectric layer 32 is surrounded by the crucible. The focus ring 47 acts to adjust the plasma state of the region outside the peripheral portion of the wafer W, for example, to play the role of making the plasma wider than the wafer W and increasing the uniformity of the etching speed in the wafer surface.

於支持台31a之下部外側設置檔板28，俾包圍支持台31a。檔板28扮演作為使上部室21a內之處理氣體經由形成於檔板28與上部室21a壁部之間之間隙朝下部室21b流通，藉此使上部室21a內之處理氣體之氣流均一排氣之整流板之角色。 A baffle 28 is provided on the outer side of the lower portion of the support table 31a, and surrounds the support table 31a. The baffle 28 functions to allow the processing gas in the upper chamber 21a to flow toward the lower chamber 21b via the gap formed between the baffle plate 28 and the wall portion of the upper chamber 21a, thereby uniformly exhausting the flow of the process gas in the upper chamber 21a. The role of the rectifying board.

且上部電極51呈中空狀形成，於其下表面分散形成用來對處理容器21內分散供給處理氣體之多數之氣體供給孔52，俾例如使處理均一，藉此構成氣體噴淋頭。於上部電極51之上方設有氣體擴散室52a，以氣體擴散室 52a使氣體擴散，朝氣體供給孔供給之。氣體擴散室52a亦可分割為複數。且於上部電極51之上表面中央設有氣體導入管53，此氣體導入管53貫通處理容器21之上表面中央，於上游連接處理氣體供給源55。此處理氣體供給源55包含未圖示之處理氣體供給量之控制機構，可控制對電漿處理裝置2處理氣體之供給量之供給與否及增減。上部電極51、氣體導入管53及處理氣體供給源55係用來對處理容器21之內部供給處理氣體之氣體供給部之一例。且上部電極51固定於上部室21a之壁部，藉此於上部電極51與處理容器21之間形成導電路。 Further, the upper electrode 51 is formed in a hollow shape, and a gas supply hole 52 for dispersing and supplying a plurality of processing gases to the processing container 21 is dispersed on the lower surface thereof, and for example, the treatment is uniform, thereby constituting the gas shower head. A gas diffusion chamber 52a is disposed above the upper electrode 51 to be a gas diffusion chamber 52a diffuses the gas and supplies it to the gas supply hole. The gas diffusion chamber 52a can also be divided into a plurality. A gas introduction pipe 53 is provided at the center of the upper surface of the upper electrode 51. The gas introduction pipe 53 passes through the center of the upper surface of the processing container 21, and is connected upstream to the processing gas supply source 55. The processing gas supply source 55 includes a control means for supplying a processing gas (not shown), and can control whether or not the supply amount of the processing gas to the plasma processing apparatus 2 is increased or decreased. The upper electrode 51, the gas introduction pipe 53, and the processing gas supply source 55 are examples of a gas supply unit for supplying a processing gas to the inside of the processing container 21. Further, the upper electrode 51 is fixed to the wall portion of the upper chamber 21a, whereby a conductive circuit is formed between the upper electrode 51 and the processing container 21.

且於上部室21a之周圍，在送入送出口25之上下配置二個多極化磁石56a、56b。配置多極化磁石56a、56b，俾複數之各異向性節段柱狀磁石安裝於環狀之磁性體之機殼，鄰接之複數之節段柱狀磁石彼此之方向相互逆向。藉此，磁力線於鄰接之節段柱狀磁石間形成，在上部電極51與下部電極31之間之處理空間之周邊部形成磁場，可封閉電漿於處理空間。又，裝置構成亦可不具有多極化磁石56a、56b。 Further, two multi-polarized magnets 56a and 56b are disposed below the upper and lower chambers 21a, above and below the feed-in/out port 25. The multi-polarized magnets 56a and 56b are disposed, and the anisotropic segmental columnar magnets of the plurality of turns are mounted on the casing of the annular magnetic body, and the adjacent plurality of columnar magnets are opposite to each other in the direction of each other. Thereby, the magnetic lines of force are formed between the adjacent columnar magnets, and a magnetic field is formed in the peripheral portion of the processing space between the upper electrode 51 and the lower electrode 31, so that the plasma can be sealed in the processing space. Further, the device configuration may not have the multi-polarized magnets 56a and 56b.

且電漿處理裝置2各構成部連接具有CPU之程序控制器100而被控制。程序控制器100連接程序管理者進行用來管理電漿處理裝置2之指令之輸入操作等之鍵盤，或使電漿處理裝置2之運轉狀況可視化而顯示之顯示器等所構成之使用者介面101。 Further, each component of the plasma processing apparatus 2 is connected to the program controller 100 having a CPU and is controlled. The program controller 100 is connected to a user interface for constructing a keyboard for inputting an operation of a command of the plasma processing apparatus 2 or a display or the like for visualizing the operation state of the plasma processing apparatus 2.

且程序控制器100連接將記錄有用來藉由控制程序控制器100實現由電漿處理裝置2實行之各種處理之控制程式，或處理條件資料等之配方加以儲存之記憶部102。 Further, the program controller 100 is connected to the memory unit 102 which stores a control program for realizing various processes executed by the plasma processing device 2 by the control program controller 100, or a recipe for processing condition data and the like.

且亦可以來自使用者介面101之指示等自記憶部102叫出任意之配方，由程序控制器100實行，藉此在程序控制器100之控制下，於電漿處理裝置2進行所希望之處理。配方可利用例如由CD-ROM、硬碟、軟碟、快閃記憶體等電腦可讀取之記憶媒體儲存之狀態者，或是，自其他裝置經由例如專用線路隨時傳送而利用。程序控制器100亦稱「控制部」。 Alternatively, an arbitrary recipe can be called from the memory unit 102 from the instruction of the user interface 101, and executed by the program controller 100, whereby the desired processing is performed in the plasma processing apparatus 2 under the control of the program controller 100. . The recipe may be utilized by, for example, a state of a memory medium readable by a computer such as a CD-ROM, a hard disk, a floppy disk, a flash memory, or the like, or may be utilized for transmission from another device via, for example, a dedicated line. The program controller 100 is also referred to as a "control unit".

例如，程序控制器100控制電漿處理裝置2各部，俾進行後述之電漿處理方法。舉更詳細之一例說明即知，程序控制器100自處理氣體供給源55對處理容器21之內部供給處理氣體。又，程序控制器100供給用來產生對處理容器21之內部所供給之處理氣體之電漿，頻率為100MHz~150MHz之電漿產生用電力，與頻率低於電漿產生用電力之偏壓用電力。又，程序控制器100使偏壓用電力脈衝調變，俾負載比為10%~70%，且頻率為5kHz~20kHz，同時藉由處理氣體之電漿蝕刻被處理體。在此，所謂使偏壓用電力脈衝調變包含例如交互重複供給及供給停止偏壓用電力。且所謂負載比係相對於將供給偏壓用電力之供給時間，與停止供給偏壓用電力之停止時間相加而獲得之相加時間之供給時間之比。且被處理體係例如晶圓W。 For example, the program controller 100 controls each part of the plasma processing apparatus 2, and performs a plasma processing method which will be described later. As will be described in more detail, the program controller 100 supplies a processing gas to the inside of the processing container 21 from the processing gas supply source 55. Further, the program controller 100 supplies a plasma for generating a processing gas supplied to the inside of the processing container 21, and a plasma generating power having a frequency of 100 MHz to 150 MHz and a bias voltage lower than a frequency for generating plasma. electric power. Further, the program controller 100 modulates the bias power pulse with a load-to-load ratio of 10% to 70% and a frequency of 5 kHz to 20 kHz while etching the object to be processed by plasma of the processing gas. Here, the power pulse for bias voltage modulation includes, for example, cross-over supply and supply stop bias power. The load ratio is a ratio of the supply time of the supply power for the bias voltage to the supply time of the addition time obtained by adding the stop time of the power supply for the bias voltage. And the system to be processed, such as wafer W.

圖2A係顯示依本實施形態之被處理體之構造例(其1)之剖面圖。圖2A所示之被處理體包含作為處理對象膜之多晶矽膜201，與在多晶矽膜201之上呈線狀形成，作為遮罩之SiO2膜202。又，圖2A中，雖顯示在多晶矽膜201之上形成SiO2膜202之例，但亦可在多晶矽膜201之上形成有機膜。 Fig. 2A is a cross-sectional view showing a structural example (1) of the object to be processed according to the embodiment. The object to be processed shown in FIG. 2A includes a polycrystalline germanium film 201 as a film to be processed, and a SiO 2 film 202 which is formed in a line shape on the polycrystalline germanium film 201 as a mask. Further, in FIG. 2A, an example in which the SiO 2 film 202 is formed on the polysilicon film 201 is shown, but an organic film may be formed on the polysilicon film 201.

圖2B係顯示依本實施形態之被處理體之構造例(其2)之剖面圖。圖2B所示之被處理體包含作為處理對象膜之SiO2膜301，與在SiO2膜301之上呈線狀形成，作為遮罩之有機膜302。有機膜302宜係例如非晶碳、SiCO等。又，圖2B中，雖顯示在SiO2膜301之上形成有機膜302之例，但亦可在SiO2膜301之上形成多晶矽膜。 Fig. 2B is a cross-sectional view showing a structural example (the second) of the object to be processed according to the embodiment. The object to be processed shown in FIG. 2B includes an SiO 2 film 301 as a film to be processed, and an organic film 302 which is formed in a line shape on the SiO 2 film 301 as a mask. The organic film 302 is preferably, for example, amorphous carbon, SiCO or the like. Further, in FIG. 2B, an example in which the organic film 302 is formed on the SiO 2 film 301 is shown, but a polycrystalline germanium film may be formed on the SiO 2 film 301.

圖2C係顯示依本實施形態之被處理體之構造例(其3)之剖面圖。圖2C所示之被處理體包含作為處理對象膜之複數之疊層膜401，與在疊層膜401之上呈線狀形成，作為遮罩之有機膜402。有機膜402宜係例如非晶碳、SiCO等。疊層膜401係SiO2膜401a與多晶矽膜401b之疊層膜。疊層膜401至少形成24層以上。 Fig. 2C is a cross-sectional view showing a structural example (3) of the object to be processed according to the embodiment. The object to be processed shown in FIG. 2C includes a plurality of laminated films 401 as a film to be processed, and an organic film 402 which is formed in a line shape on the laminated film 401 as a mask. The organic film 402 is preferably, for example, amorphous carbon, SiCO or the like. The laminated film 401 is a laminated film of the SiO 2 film 401a and the polycrystalline germanium film 401b. The laminated film 401 is formed in at least 24 layers.

其次，更詳細說明關於以依本實施形態之電漿處理裝置2進行之電漿 處理方法。圖3係顯示以依本實施形態之電漿處理裝置進行之電漿處理方法之處理流程之一例之流程圖。 Next, the plasma of the plasma processing apparatus 2 according to the present embodiment will be described in more detail. Approach. Fig. 3 is a flow chart showing an example of a processing flow of a plasma processing method by the plasma processing apparatus according to the embodiment.

如圖3所示，電漿處理裝置2進行對配置有被處理體之處理容器21之內部供給處理氣體之氣體供給程序(步驟S101)。例如，電漿處理裝置2中，作為處理氣體，對處理容器21之內部供給含有溴或氯、氟、與氧之氣體。含有溴或氯、氟、與氧之氣體係例如HBr/NF3/O2。且例如電漿處理裝置2中，作為處理氣體，亦可對處理容器21之內部供給CF類氣體。CF類氣體係例如CF4。且作為處理氣體，對處理容器21之內部供給含有溴或氯、氟、與氧之氣體時，處理氣體亦可更包含氬。 As shown in FIG. 3, the plasma processing apparatus 2 performs a gas supply program for supplying a processing gas to the inside of the processing container 21 in which the object to be processed is placed (step S101). For example, in the plasma processing apparatus 2, a gas containing bromine, chlorine, fluorine, and oxygen is supplied to the inside of the processing container 21 as a processing gas. A gas system containing bromine or chlorine, fluorine, and oxygen such as HBr/NF 3 /O 2 . Further, for example, in the plasma processing apparatus 2, a CF-based gas may be supplied to the inside of the processing container 21 as a processing gas. A CF-based gas system such as CF 4 . Further, when a gas containing bromine, chlorine, fluorine, or oxygen is supplied to the inside of the processing container 21 as a processing gas, the processing gas may further contain argon.

舉更詳細之一例說明之。電漿處理裝置2之程序控制器100自處理氣體供給源55，經由作為噴淋頭之上部電極51對處理容器21之內部供給處理氣體。 Give a more detailed example to illustrate. The program controller 100 of the plasma processing apparatus 2 supplies the processing gas to the inside of the processing container 21 from the processing gas supply source 55 via the upper electrode 51 of the shower head.

接著，電漿處理裝置2進行供給頻率為100MHz~150MHz之電漿產生用電力，與頻率低於電漿產生用電力之偏壓用電力之電力供給程序(步驟S102)。在此，偏壓用電力之頻率例如為0.4kHz~13.56MHz。且偏壓用電力例如為500W~3000W。 Next, the plasma processing apparatus 2 performs a power supply program for supplying power for plasma generation having a frequency of 100 MHz to 150 MHz and a power for bias voltage having a frequency lower than that for power generation for plasma generation (step S102). Here, the frequency of the bias power is, for example, 0.4 kHz to 13.56 MHz. The bias power is, for example, 500 W to 3000 W.

舉更詳細之一例說明之。電漿處理裝置2之程序控制器100自第1高頻電源45a對處理容器21之內部供給電漿產生用電力，藉此自處理氣體產生電漿。且程序控制器100自第2高頻電源45b對被處理體供給偏壓用電力，藉此將電漿中之離子導入被處理體。 Give a more detailed example to illustrate. The program controller 100 of the plasma processing apparatus 2 supplies the plasma generating electric power to the inside of the processing container 21 from the first high-frequency power source 45a, thereby generating plasma from the processing gas. The program controller 100 supplies the bias power to the object to be processed from the second high-frequency power source 45b, thereby introducing ions in the plasma into the object to be processed.

接著，電漿處理裝置2進行使偏壓用電力脈衝調變，俾負載比為10%~70%，且頻率為5kHz~20kHz，同時藉由處理氣體之電漿蝕刻被處理體之蝕刻程序(步驟S103)。電漿處理裝置2宜使偏壓用電力脈衝調變，俾負載比為20%~70%，且頻率為5kH~20kHz，同時藉由處理氣體之電漿蝕刻被處理體。電漿處理裝置2更宜使偏壓用電力脈衝調變，俾負載比為40% ~60%，且頻率為5kHz~10kHz，同時藉由處理氣體之電漿蝕刻被處理體。以蝕刻程序蝕刻之被處理體之中心位置之蝕刻速率，與自該被處理體之中心位置沿徑向朝周緣側恰偏離既定距離之位置之蝕刻速率之差為-1.2(nm/min)~1.2(nm/min)。 Next, the plasma processing apparatus 2 performs an etching process of modulating the object to be processed by the plasma of the processing gas by adjusting the power pulse for bias voltage, the 俾 load ratio is 10% to 70%, and the frequency is 5 kHz to 20 kHz. Step S103). The plasma processing apparatus 2 is preferably configured to modulate the bias power pulse with a 俾 load ratio of 20% to 70% and a frequency of 5 kHz to 20 kHz while etching the object to be processed by plasma of the processing gas. The plasma processing device 2 is preferably configured to modulate the bias voltage with a load-to-load ratio of 40%. ~60%, and the frequency is 5 kHz to 10 kHz, while the object to be processed is etched by plasma of the processing gas. The etching rate of the center position of the object to be processed which is etched by the etching process is erroneously offset from the center position of the object to be processed by a predetermined distance from the center side of the object to be processed by -1.2 (nm/min). 1.2 (nm/min).

例如，假定被處理體包含多晶矽膜與SiO2膜或有機膜之情形。此時，電漿處理裝置2以SiO2膜或有機膜為遮罩，藉由處理氣體之電漿蝕刻多晶矽膜。且例如假定被處理體包含SiO2膜，與有機膜或多晶矽膜之情形。此時，電漿處理裝置2以有機膜或多晶矽膜為遮罩，藉由處理氣體之電漿蝕刻SiO2膜。且例如假定被處理體包含SiO2膜與多晶矽膜之疊層膜，及有機膜之情形。此時，電漿處理裝置2以有機膜為遮罩，藉由處理氣體之電漿蝕刻疊層膜。 For example, it is assumed that the object to be processed contains a polycrystalline germanium film and a SiO 2 film or an organic film. At this time, the plasma processing apparatus 2 uses a SiO 2 film or an organic film as a mask, and the polysilicon film is etched by the plasma of the processing gas. For example, it is assumed that the object to be treated contains a SiO 2 film, and an organic film or a polycrystalline film. At this time, the plasma processing apparatus 2 masks the SiO 2 film by the plasma of the processing gas with the organic film or the polysilicon film as a mask. For example, it is assumed that the object to be processed contains a laminated film of a SiO 2 film and a polycrystalline germanium film, and a case of an organic film. At this time, the plasma processing apparatus 2 masks the organic film, and the laminated film is etched by the plasma of the processing gas.

圖4A及圖4B係顯示依本實施形態之蝕刻程序之一例圖。又，圖4A及圖4B之例中，被處理體如圖2B所示，包含作為處理對象膜之SiO2膜301，與在SiO2膜301之上呈線狀形成，作為遮罩之有機膜302。電漿處理裝置2之程序控制器100自第2高頻電源45b對晶圓W供給偏壓用電力，並使偏壓用電力脈衝調變，俾負載比為60%，且頻率為10kHz。亦即，如圖4B所示，程序控制器100在將電漿中之正離子或負離子導入被處理體時，控制第2高頻電源45b之ON/OFF，俾負載比為60%，且頻率為10kHz，藉此使偏壓用電力脈衝調變。 4A and 4B are views showing an example of an etching procedure according to the embodiment. In the example of FIG. 4A and FIG. 4B, the object to be processed includes the SiO 2 film 301 as a film to be processed, and is formed in a line shape on the SiO 2 film 301 as an organic film as a mask. 302. The program controller 100 of the plasma processing apparatus 2 supplies the bias power to the wafer W from the second high-frequency power source 45b, and modulates the bias power pulse, and the load-to-load ratio is 60%, and the frequency is 10 kHz. That is, as shown in FIG. 4B, when the positive or negative ions in the plasma are introduced into the object to be processed, the program controller 100 controls ON/OFF of the second high-frequency power source 45b, and the load-to-load ratio is 60%, and the frequency is It is 10 kHz, whereby the bias voltage is modulated by the power pulse.

其結果，第2高頻電源45b為ON時，如圖4A之(a)所示，正離子及負離子對被處理體上之SiO2膜301之碰撞加速，被處理體上離子鞘之厚度增加。另一方面，第2高頻電源45b為OFF時，如圖4A之(b)所示，正離子及負離子對被處理體上之SiO2膜301之碰撞受到抑制，被處理體上離子鞘之厚度減少。控制供給偏壓用電力之第2高頻電源45b為ON/OFF，藉此圖4A之(a)所示之離子鞘之狀態與圖4A之(b)所示之離子鞘之狀態交互重複。如此，被處理體上離子鞘之成長即受到抑制。特別是，形成於對應被處理體之中央部之區域之離子鞘之成長相較於形成於對應被 處理體之周緣部之區域之離子鞘之成長受到抑制。其結果，對應被處理體之中央部之電漿密度與對應被處理體之周緣部之電漿密度被適度地均一化，可維持被處理體上SiO2膜301之被處理面之均一性。例如，作為形成於被處理體上之SiO2膜301之電洞之寬之CD(Critical Dimension)自被處理體之中央部橫跨被處理體之周緣部均一化。 As a result, when the second high-frequency power source 45b is turned on, as shown in FIG. 4A(a), the collision of the positive ions and the negative ions on the SiO 2 film 301 on the object to be processed is accelerated, and the thickness of the ion sheath on the object to be processed is increased. . On the other hand, when the second high-frequency power source 45b is turned off, as shown in FIG. 4A(b), collision of positive ions and negative ions with the SiO 2 film 301 on the object to be processed is suppressed, and the ion sheath on the object to be processed is suppressed. The thickness is reduced. The second high-frequency power source 45b for controlling the power for supplying bias voltage is turned ON/OFF, whereby the state of the ion sheath shown in (a) of FIG. 4A overlaps with the state of the ion sheath shown in FIG. 4A(b). Thus, the growth of the ion sheath on the object to be treated is suppressed. In particular, the growth of the ion sheath formed in the region corresponding to the central portion of the object to be processed is suppressed from the growth of the ion sheath formed in the region corresponding to the peripheral portion of the object to be processed. As a result, the plasma density of the central portion of the object to be processed and the plasma density of the peripheral portion of the object to be processed are appropriately uniformized, and the uniformity of the surface to be treated of the SiO 2 film 301 on the object to be processed can be maintained. For example, the CD (Critical Dimension) which is the width of the hole of the SiO 2 film 301 formed on the object to be processed is uniformized from the central portion of the object to be processed across the peripheral portion of the object to be processed.

又，圖4A及圖4B之說明中，雖已說明被處理體係圖2B所示之被處理體之情形，但揭示之技術不限於此，被處理體亦可係圖2A所示之被處理體，或圖2C所示之被處理體。首先，假定被處理體如圖2A所示，包含作為處理對象膜之多晶矽膜201，與在多晶矽膜201之上呈線狀形成，作為遮罩之SiO2膜202之情形。此時，實行依本實施形態之蝕刻程序後，作為形成於被處理體上之多晶矽膜201之電洞之寬之CD即自被處理體之中央部橫跨被處理體之周緣部均一化。 4A and 4B, the case of the object to be processed shown in FIG. 2B is described. However, the technique disclosed is not limited thereto, and the object to be processed may be the object to be processed shown in FIG. 2A. Or the object to be processed shown in Fig. 2C. First, as shown in FIG. 2A, the object to be processed includes a polycrystalline germanium film 201 as a film to be processed, and a SiO 2 film 202 which is formed as a mask in a linear shape on the polycrystalline germanium film 201. At this time, after the etching process according to the present embodiment, the CD which is the width of the hole of the polysilicon film 201 formed on the object to be processed is uniformized from the central portion of the object to be processed.

且例如假定被處理體如圖2C所示，包含作為處理對象膜之複數之疊層膜401，與在疊層膜401之上呈線狀形成，作為遮罩之有機膜402。此時，實行依本實施形態之蝕刻程序後，作為形成於被處理體上之疊層膜401之電洞之寬之CD即自被處理體之中央部橫跨被處理體之周緣部均一化。 For example, as shown in FIG. 2C, the object to be processed includes a plurality of laminated films 401 as a film to be processed, and an organic film 402 which is formed in a line on the laminated film 401 as a mask. In this case, after the etching process according to the present embodiment, the CD which is the width of the hole formed in the laminated film 401 of the object to be processed is uniformized from the central portion of the object to be processed to the peripheral portion of the object to be processed. .

如上述，依本實施形態，進行下列程序：氣體供給程序，對處理容器21之內部供給處理氣體；電力供給程序，供給頻率為100MHz~150MHz之電漿產生用電力，與偏壓用電力；及蝕刻程序，使偏壓用電力脈衝調變，俾負載比為10%~70%，且頻率為5kHz~20kHz，同時藉由處理氣體之電漿蝕刻被處理體。 As described above, according to the present embodiment, the following procedure is provided: a gas supply program for supplying a processing gas to the inside of the processing container 21, and a power supply program for supplying plasma generating power having a frequency of 100 MHz to 150 MHz and bias power; The etching process modulates the bias voltage with a power pulse, the 俾 load ratio is 10% to 70%, and the frequency is 5 kHz to 20 kHz, and the object to be processed is etched by plasma of the processing gas.

因此，對應被處理體之中央部之電漿密度與對應被處理體之周緣部之電漿密度被適度均一化。其結果，可以不需變更構成，同時維持被處理體之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 Therefore, the plasma density corresponding to the central portion of the object to be processed and the plasma density of the peripheral portion of the corresponding object to be processed are appropriately uniformized. As a result, it is possible to expand the processing condition setting range, that is, the processing device and the processing margin (permissible range), without changing the configuration while maintaining the uniformity of the processed surface of the object to be processed, so that the device can be continuously Process it.

且依本實施形態，蝕刻程序中，宜使偏壓用電力脈衝調變，俾負載比為20%~60%，且頻率為5kHz~20kHz，同時藉由處理氣體之電漿蝕刻被處理體。其結果，可以更高精度地維持被處理體之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 According to this embodiment, in the etching process, it is preferable to adjust the bias power pulse, the load-to-load ratio is 20% to 60%, and the frequency is 5 kHz to 20 kHz, and the object to be processed is etched by the plasma of the processing gas. As a result, the setting range of the expansion processing conditions, that is, the margin of the processing device and the processing (allowable range) can be maintained so that the uniformity of the processed surface of the object to be processed can be maintained with higher precision, and the apparatus can be continuously processed. .

且依本實施形態，蝕刻程序中，更宜使偏壓用電力脈衝調變，俾負載比為40%~60%，且頻率為5kHz~20kHz，同時藉由處理氣體之電漿蝕刻被處理體。其結果，可以更高精度地維持被處理體之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 According to the embodiment, in the etching process, it is preferable to adjust the bias power pulse, the load-to-load ratio is 40% to 60%, and the frequency is 5 kHz to 20 kHz, and the processed object is plasma-etched by the processing gas. . As a result, the setting range of the expansion processing conditions, that is, the margin of the processing device and the processing (allowable range) can be maintained so that the uniformity of the processed surface of the object to be processed can be maintained with higher precision, and the apparatus can be continuously processed. .

且依本實施形態，偏壓用電力之頻率為0.4kHz~13.56MHz。其結果，可高效率地導入電漿中之離子，故可以更高精度地維持被處理體之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 According to this embodiment, the frequency of the bias power is 0.4 kHz to 13.56 MHz. As a result, since the ions in the plasma can be efficiently introduced, the setting range of the expansion processing conditions, that is, the processing device and the processing margin, can be maintained while maintaining the uniformity of the processed surface of the object to be processed with higher precision. (allowed range), so that the device can be processed continuously.

且依本實施形態，被處理體包含多晶矽膜與SiO2膜或有機膜，蝕刻程序中，以SiO2膜或有機膜為遮罩，藉由處理氣體之電漿蝕刻多晶矽膜。其結果，可以維持被處理體上之多晶矽膜之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 Further, according to the present embodiment, the object to be processed includes a polycrystalline germanium film, an SiO 2 film or an organic film, and in the etching process, the polysilicon film is etched by a plasma of a processing gas using a SiO 2 film or an organic film as a mask. As a result, the setting range of the expansion processing conditions, that is, the processing device and the processing margin (permissible range) can be maintained, so that the uniformity of the processed surface of the polysilicon film on the object to be processed can be maintained, so that the device can be continuously processed. .

且依本實施形態，被處理體包含SiO2膜，與有機膜或多晶矽膜，蝕刻程序中，以有機膜或多晶矽膜為遮罩，藉由處理氣體之電漿蝕刻SiO2膜。其結果，可以維持被處理體上之SiO2膜之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 Further, according to the present embodiment, the object to be processed includes an SiO 2 film, an organic film or a polysilicon film, and in the etching process, the organic film or the polysilicon film is used as a mask, and the SiO 2 film is etched by the plasma of the processing gas. As a result, the setting range of the expansion processing conditions, that is, the processing device and the processing margin (permissible range) can be maintained so that the uniformity of the treated surface of the SiO 2 film on the object to be processed can be maintained. deal with.

且依本實施形態，被處理體包含SiO2膜與多晶矽膜之疊層膜，及有機 膜，蝕刻程序中，以有機膜為遮罩，藉由處理氣體之電漿蝕刻疊層膜。其結果，可以維持被處理體上之疊層膜之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 According to the present embodiment, the object to be processed includes a laminated film of a SiO 2 film and a polycrystalline germanium film, and an organic film. In the etching process, the organic film is used as a mask, and the laminated film is etched by plasma of a processing gas. As a result, the setting range of the expansion processing conditions, that is, the processing device and the processing margin (permissible range) can be maintained so that the uniformity of the processed surface of the laminated film on the object to be processed can be maintained. deal with.

且依本實施形態，疊層膜至少堆疊24層以上。其結果，可以維持在被處理體上至少堆疊24層以上之疊層膜之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 According to this embodiment, at least 24 layers of the laminated film are stacked. As a result, the setting range of the expansion processing conditions, that is, the processing device and the processing margin (permissible range), can be maintained while maintaining the uniformity of the processed surface of the laminated film of at least 24 layers or more on the object to be processed. The device is continuously processed.

且依本實施形態，處理氣體包含溴或氯、氟、與氧。其結果，可以更高精度地維持被處理體之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 According to this embodiment, the processing gas contains bromine, chlorine, fluorine, and oxygen. As a result, the setting range of the expansion processing conditions, that is, the margin of the processing device and the processing (allowable range) can be maintained so that the uniformity of the processed surface of the object to be processed can be maintained with higher precision, and the apparatus can be continuously processed. .

且依本實施形態，處理氣體更包含氬。其結果，可不需變更構成，同時僅藉由變更氬之流量控制被處理體之中央部之蝕刻速率及CD為所希望之值。 According to this embodiment, the processing gas further contains argon. As a result, it is possible to control the etching rate and CD of the central portion of the object to be processed to a desired value by merely changing the flow rate of argon without changing the configuration.

且依本實施形態，處理氣體包含CF類氣體。其結果，可以更高精度地維持被處理體之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 According to this embodiment, the processing gas contains a CF-based gas. As a result, the setting range of the expansion processing conditions, that is, the margin of the processing device and the processing (allowable range) can be maintained so that the uniformity of the processed surface of the object to be processed can be maintained with higher precision, and the apparatus can be continuously processed. .

且依本實施形態，偏壓用電力為500W~3000W。其結果，可控制被處理體之中央部之蝕刻速率及CD為所希望之值。 According to this embodiment, the bias power is 500 W to 3000 W. As a result, the etching rate and CD of the central portion of the object to be processed can be controlled to a desired value.

且依本實施形態，以蝕刻程序蝕刻之被處理體之中心位置之蝕刻速率，與自該被處理體之中心位置沿徑向朝周緣側恰偏離既定距離之位置之蝕刻速率之差為-1.2(nm/min)~1.2(nm/min)。其結果，可高精度地控制被處理體之中央部之蝕刻速率及CD為所希望之值。 According to this embodiment, the etching rate of the center position of the object to be processed which is etched by the etching process is erroneously offset from the center position of the object to be processed by a predetermined distance from the center side of the object to be -1.2. (nm/min)~1.2 (nm/min). As a result, the etching rate and CD of the central portion of the object to be processed can be controlled with high precision to a desired value.

(實施例) (Example)

以下，舉出實施例更詳細地說明關於揭示之電漿處理方法。惟，揭示之電漿處理方法不由以下之實施例限定。 Hereinafter, the plasma processing method disclosed will be described in more detail with reference to examples. However, the disclosed plasma processing methods are not limited by the following examples.

(比較例1) (Comparative Example 1)

比較例1中，對被處理體進行依序進行氣體供給程序、電力供給程序、與蝕刻程序之一連串電漿處理程序。電漿處理程序使用以下條件進行。被處理體使用具有以下構造者。 In the first comparative example, the object to be processed is sequentially subjected to a gas supply program, a power supply program, and a plasma processing program in series with one of the etching programs. The plasma processing procedure was carried out using the following conditions. The object to be processed uses the following constructor.

(被處理體) (subject to be processed)

處理對象膜：SiO2膜 Treatment target film: SiO 2 film

遮罩：多晶矽膜 Mask: polycrystalline film

(電漿處理程序) (plasma processing program)

處理氣體：HBr/NF3/O2=300/34/24sccm Processing gas: HBr/NF 3 /O 2 =300/34/24sccm

來自第1高頻電源之高頻電力(電漿產生用電力)：800W High-frequency power from the first high-frequency power source (electricity for plasma generation): 800W

電漿產生用電力之頻率：100MHz Frequency of electricity generated by plasma: 100MHz

來自第2高頻電源之高頻電力(偏壓用電力)：600W High-frequency power from the second high-frequency power supply (bias power): 600W

偏壓用電力之頻率：13.56MHz Frequency of bias power: 13.56MHz

針對偏壓用電力之脈衝調變：不實行 Pulse modulation for bias power: not implemented

脈衝調變後偏壓用電力之負載比：100% Load ratio of bias power after pulse modulation: 100%

脈衝調變後偏壓用電力之頻率：0kHz Frequency of power for bias after pulse modulation: 0kHz

溫度(上部電極/處理容器之內壁/下部電極)：80/70/60℃ Temperature (upper electrode / inner wall of the processing vessel / lower electrode): 80/70/60 ° C

(實施例1) (Example 1)

實施例1中，於電漿處理程序，使用以下條件使偏壓用電力脈衝調變，同時藉由處理氣體之電漿蝕刻被處理體。關於其他點，與比較例1相同。 In the first embodiment, in the plasma processing program, the bias voltage is modulated by the following conditions, and the object to be processed is etched by the plasma of the processing gas. The other points are the same as in Comparative Example 1.

針對偏壓用電力之脈衝調變：實行 Pulse modulation for bias power: implementation

脈衝調變後偏壓用電力之負載比：60% Load ratio of bias power after pulse modulation: 60%

脈衝調變後偏壓用電力之頻率：5kHz Frequency of power for bias after pulse modulation: 5 kHz

(實施例2) (Example 2)

實施例2中，於電漿處理程序，作為偏壓用電力使用以下條件。關於其他點，與實施例1相同。 In the second embodiment, the following conditions were used as the bias power in the plasma processing program. The other points are the same as in the first embodiment.

來自第2高頻電源之高頻電力(偏壓用電力)：1000W High-frequency power (bias power) from the second high-frequency power supply: 1000W

(實施例3) (Example 3)

實施例3中，於電漿處理程序，作為偏壓用電力使用以下條件，且作為脈衝調變後偏壓用電力之頻率使用以下條件。關於其他點，與實施例1相同。 In the third embodiment, the following conditions were used as the bias power for the plasma processing program, and the following conditions were used as the frequency of the bias power after the pulse modulation. The other points are the same as in the first embodiment.

來自第2高頻電源之高頻電力(偏壓用電力)：1000W High-frequency power (bias power) from the second high-frequency power supply: 1000W

脈衝調變後偏壓用電力之頻率：10kHz Frequency of power for bias after pulse modulation: 10 kHz

(關於比較例1及實施例1~3之處理結果) (Related results of Comparative Example 1 and Examples 1 to 3)

圖5A係顯示關於比較例1及實施例1~3之處理結果圖。圖5A之圖501~圖504分別係顯示比較例1及實施例1~3中被處理體之蝕刻速率圖。圖501~圖504中，縱軸顯示以HBr/NF3/O2之電漿蝕刻被處理體之SiO2膜時之蝕刻速率〔nm/min〕。且圖501~圖504中，橫軸顯示被處理體之徑向之位置。亦即，圖501~圖504顯示被處理體之中心位置為「0」，自被處理體之「-150(mm)」之周緣位置至「+150(mm)」之周緣位置之蝕刻速率。 Fig. 5A is a view showing the results of processing in Comparative Example 1 and Examples 1 to 3. 501 to 504 of Fig. 5A show etch rate diagrams of the objects to be processed in Comparative Example 1 and Examples 1 to 3, respectively. In FIGS. 501 to 504, the vertical axis shows the etching rate [nm/min] when the SiO 2 film of the object to be processed is etched with a plasma of HBr/NF 3 /O 2 . In FIGS. 501 to 504, the horizontal axis shows the position of the radial direction of the object to be processed. That is, 501 to 504 show that the center position of the object to be processed is "0", and the etching rate from the peripheral position of "-150 (mm)" of the object to be processed to the peripheral position of "+150 (mm)".

且圖5A中，所謂「Point2 average」顯示被處理體之中心位置之蝕刻速率，與自被處理體之中心位置沿徑向朝周緣側恰偏離±30(mm)之位置之蝕刻速率之差。此「Point2 average」在既定值(例如1.2)以上時，意味著發生作為相較於被處理體之周緣部之蝕刻速率，被處理體之中央部之蝕刻速率過大之分布之中央領先分布。因此，藉由使「Point2 average」在1.2以下，可以高精度地維持被處理體之被處理面之均一性之方式擴張處理條件之設定範圍，亦即，處理裝置及處理之邊限(允許範圍)，使裝置不停地進行處理。 In FIG. 5A, "Point 2 average" indicates the difference between the etching rate at the center position of the object to be processed and the etching rate at a position which is exactly ±30 (mm) from the center position of the object to be processed in the radial direction toward the peripheral side. When the "Point 2 average" is equal to or greater than a predetermined value (for example, 1.2), it means that a central leading distribution of a distribution in which the etching rate of the central portion of the object to be processed is excessive is generated as compared with the etching rate of the peripheral portion of the object to be processed. Therefore, by setting "Point 2 average" to 1.2 or less, it is possible to maintain the uniformity of the processing surface of the object to be processed with high precision, that is, the processing device and the margin of processing (allowable range) ), so that the device is continuously processed.

如圖5A所示，不使偏壓用電力脈衝調變之比較例1中，沿被處理體之 徑向複數之位置之蝕刻速率之平均為26.3nm/min，相對於平均蝕刻速率之差異為±7.8%。此平均蝕刻速率與差異皆未滿足預先決定之允許規格。且比較例1中，「Point2 average」為3.1nm/min。此「Point2 average」係顯示發生中央領先分布之值。 As shown in FIG. 5A, in Comparative Example 1 in which the bias voltage is not modulated, along the object to be processed The average etch rate at the position of the radial complex is 26.3 nm/min, which is ±7.8% with respect to the average etch rate. This average etch rate and difference do not meet the pre-determined allowable specifications. In Comparative Example 1, "Point 2 average" was 3.1 nm/min. This "Point2 average" shows the value of the central leading distribution.

相對於此，使偏壓用電力脈衝調變，俾負載比為60%，且頻率為5kHz之實施例1中，沿被處理體之徑向複數之位置之蝕刻速率之平均為17.5nm/min，相對於平均蝕刻速率之差異為±7.7%。此平均蝕刻速率與差異皆滿足預先決定之允許規格。且實施例1中，「Point2 average」為0.5nm/min。此「Point2 average」係顯示中央領先分布之程度較比較例1輕減之值。換言之，實施例1中，被處理體之周緣部之蝕刻速率與被處理體之中央部之蝕刻速率之差較比較例1小。 On the other hand, in the first embodiment, the etch rate of the position of the plurality of the radial direction of the object to be processed is 17.5 nm/min. The difference from the average etch rate is ±7.7%. This average etch rate and difference both meet predetermined allowable specifications. Further, in Example 1, "Point 2 average" was 0.5 nm/min. This "Point2 average" shows the value of the central leading distribution which is lighter than that of Comparative Example 1. In other words, in the first embodiment, the difference between the etching rate of the peripheral portion of the object to be processed and the etching rate of the central portion of the object to be processed is smaller than that of the comparative example 1.

使用大於實施例1之偏壓用電力之實施例2中，沿被處理體之徑向複數之位置之蝕刻速率之平均為24.7nm/min，相對於平均蝕刻速率之差異為±5.6%。此平均蝕刻速率與差異皆滿足預先決定之允許規格。且實施例2中，「Point2 average」為1.3nm/min。此「Point2 average」係顯示中央領先分布之程度較比較例1輕減之值。換言之，實施例2中，被處理體之周緣部之蝕刻速率與被處理體之中央部之蝕刻速率之差較比較例1小。 In Example 2, which was larger than the bias power of Example 1, the average etching rate along the radial direction of the object to be processed was 24.7 nm/min, and the difference with respect to the average etching rate was ±5.6%. This average etch rate and difference both meet predetermined allowable specifications. Further, in Example 2, "Point 2 average" was 1.3 nm/min. This "Point2 average" shows the value of the central leading distribution which is lighter than that of Comparative Example 1. In other words, in the second embodiment, the difference between the etching rate of the peripheral portion of the object to be processed and the etching rate of the central portion of the object to be processed is smaller than that of the comparative example 1.

使用大於實施例1之偏壓用電力，與大於實施例1之脈衝調變後之頻率之實施例3中，沿被處理體之徑向複數之位置之蝕刻速率之平均為26.0nm/min，相對於平均蝕刻速率之差異為±6.7%。此平均蝕刻速率與差異皆滿足預先決定之允許規格。且實施例3中，「Point2 average」為0.5nm/min。此「Point2 average」係顯示中央領先分布之程度較比較例1輕減之值，且係與實施例1同等之值。換言之，實施例3中，被處理體之周緣部之蝕刻速率與被處理體之中央部之蝕刻速率之差較比較例1小，且維持與實施例1同等之值。 In the third embodiment, which is larger than the bias power of the first embodiment and the frequency after the pulse modulation of the first embodiment, the average etching rate along the radial direction of the object to be processed is 26.0 nm/min. The difference from the average etch rate is ±6.7%. This average etch rate and difference both meet predetermined allowable specifications. Further, in Example 3, "Point 2 average" was 0.5 nm/min. This "Point 2 average" indicates the value of the central leading distribution which is lighter than that of Comparative Example 1, and is equivalent to the value of Embodiment 1. In other words, in the third embodiment, the difference between the etching rate of the peripheral portion of the object to be processed and the etching rate at the central portion of the object to be processed is smaller than that of the comparative example 1, and the value equivalent to that of the first embodiment is maintained.

如此，比較比較例1與實施例1~3即知，實施例1~3中，使偏壓用 電力脈衝調變，同時藉由處理氣體之電漿蝕刻被處理體，藉此相較於不使偏壓用電力脈衝調變之手法，可提升被處理體之被處理面之均一性。 Thus, comparing Comparative Example 1 with Examples 1 to 3, it is known that in Examples 1 to 3, the bias voltage is used. The power pulse is modulated, and the object to be processed is etched by the plasma of the processing gas, whereby the uniformity of the processed surface of the object to be processed can be improved compared to the method of not modulating the power pulse for biasing.

(負載比及頻率對中央領先分布造成之影響之驗證結果(其1)) (Verification of the effect of load ratio and frequency on the central leading distribution (1))

圖5B係顯示負載比及頻率對中央領先分布造成之影響之驗證結果(其1)之圖。圖5B中，橫軸顯示脈衝調變後偏壓用電力之負載比(%)，縱軸顯示脈衝調變後偏壓用電力之頻率(kHz)。且圖5B中，所謂「Point2 average」顯示被處理體之中心位置之蝕刻速率，與自被處理體之中心位置沿徑向恰偏離±30(mm)之位置之蝕刻速率之差。且圖5B中，一併顯示分別對應比較例1、實施例2及實施例3之測定點。 Fig. 5B is a diagram showing the verification result (1) of the influence of the load ratio and frequency on the central leading distribution. In Fig. 5B, the horizontal axis shows the duty ratio (%) of the bias power after the pulse modulation, and the vertical axis shows the frequency (kHz) of the bias power after the pulse modulation. In Fig. 5B, "Point 2 average" indicates the difference between the etching rate of the center position of the object to be processed and the etching rate at a position which is exactly ±30 (mm) from the center position of the object to be processed. In FIG. 5B, the measurement points corresponding to Comparative Example 1, Example 2, and Example 3 are shown together.

如圖5B所示，不使偏壓用電力脈衝調變之比較例1中，「Point2 average」大於1.2nm/min，故已知中央領先分布之程度相對較大。相對於此，使偏壓用電力脈衝調變之實施例1及實施例3中，「Point2 average」在1.2nm/min以下，故已知中央領先分布之程度較比較例1輕減。因此，本案發明人等就存在於分別對應實施例2及實施例3之測定點周圍之複數之測定點測定「Point2 average」。此測定之結果，使偏壓用電力脈衝調變，俾負載比為10%~70%，且頻率為5kHz~20kHz時，「Point2 average」在1.2nm/min以下。且使偏壓用電力脈衝調變，俾負載比為40%~60%，且頻率為5kHz~10kHz時，相較於使偏壓用電力脈衝調變，俾負載比為10%~70%，且頻率為5kHz~20kHz時，「Point2 average」較小。亦即，經確認宜使偏壓用電力脈衝調變，俾負載比為10%~70%，且頻率為5kHz~20kHz，負載比為40%~60%，且頻率為5kHz~10kHz更佳，藉此可使中央領先分布之程度輕減。 As shown in FIG. 5B, in Comparative Example 1 in which the bias power pulse was not modulated, "Point 2 average" was larger than 1.2 nm/min, so that the degree of central leading distribution was known to be relatively large. On the other hand, in the first and third embodiments in which the bias power pulse is modulated, the "Point 2 average" is 1.2 nm/min or less. Therefore, the degree of the central leading distribution is known to be smaller than that of the comparative example 1. Therefore, the inventors of the present invention measured the "Point 2 average" at the measurement points of the plural corresponding to the measurement points of the second and third embodiments, respectively. As a result of this measurement, the bias voltage is modulated by a power pulse, the load-to-load ratio is 10% to 70%, and the "Point 2 average" is 1.2 nm/min or less at a frequency of 5 kHz to 20 kHz. Moreover, the bias voltage is modulated by the power pulse, the load-to-load ratio is 40% to 60%, and the frequency is 5 kHz to 10 kHz, and the load-to-load ratio is 10% to 70% compared with the power pulse for biasing. When the frequency is 5 kHz to 20 kHz, "Point 2 average" is small. That is, it is confirmed that the bias voltage is modulated by the power pulse, the load-to-load ratio is 10% to 70%, the frequency is 5 kHz to 20 kHz, the duty ratio is 40% to 60%, and the frequency is preferably 5 kHz to 10 kHz. This will reduce the extent of the central lead distribution.

(比較例2) (Comparative Example 2)

比較例2中，對被處理體進行依序進行氣體供給程序、電力供給程序、與蝕刻程序之一連串電漿處理程序。電漿處理程序使用以下條件進行。被處理體使用具有以下構造者。 In the second comparative example, the object to be processed is sequentially subjected to a gas supply program, a power supply program, and a plasma processing program in series with one of the etching programs. The plasma processing procedure was carried out using the following conditions. The object to be processed uses the following constructor.

(被處理體) (subject to be processed)

處理對象膜：SiO2膜 Treatment target film: SiO 2 film

遮罩：多晶矽膜 Mask: polycrystalline film

(電漿處理程序) (plasma processing program)

處理氣體：CF4=100sccm Processing gas: CF 4 =100sccm

來自第1高頻電源之高頻電力(電漿產生用電力)：600W High-frequency power from the first high-frequency power source (electricity for plasma generation): 600W

電漿產生用電力之頻率：100MHz Frequency of electricity generated by plasma: 100MHz

來自第2高頻電源之高頻電力(偏壓用電力)：600W High-frequency power from the second high-frequency power supply (bias power): 600W

偏壓用電力之頻率：13.56MHz Frequency of bias power: 13.56MHz

針對偏壓用電力之脈衝調變：不實行 Pulse modulation for bias power: not implemented

脈衝調變後偏壓用電力之負載比：100% Load ratio of bias power after pulse modulation: 100%

脈衝調變後偏壓用電力之頻率：0kHz Frequency of power for bias after pulse modulation: 0kHz

溫度(上部電極/處理容器之內壁/下部電極)：80/70/60℃ Temperature (upper electrode / inner wall of the processing vessel / lower electrode): 80/70/60 ° C

(實施例4) (Example 4)

實施例4中，於電漿處理程序，使用以下條件使偏壓用電力脈衝調變，同時藉由處理氣體之電漿蝕刻被處理體。關於其他點，與比較例2相同。 In the fourth embodiment, in the plasma processing program, the bias voltage is modulated by the following conditions, and the object to be processed is etched by the plasma of the processing gas. The other points are the same as in Comparative Example 2.

針對偏壓用電力之脈衝調變：實行 Pulse modulation for bias power: implementation

脈衝調變後偏壓用電力之負載比：60% Load ratio of bias power after pulse modulation: 60%

脈衝調變後偏壓用電力之頻率：10kHz Frequency of power for bias after pulse modulation: 10 kHz

(實施例5) (Example 5)

實施例5中，於電漿處理程序，作為偏壓用電力使用以下條件。關於其他點，與實施例4相同。 In the fifth embodiment, the following conditions were used as the bias power in the plasma processing program. The other points are the same as in the fourth embodiment.

來自第2高頻電源之高頻電力(偏壓用電力)：1000W High-frequency power (bias power) from the second high-frequency power supply: 1000W

(關於比較例2及實施例4、5之處理結果) (Results of Comparative Example 2 and Examples 4 and 5)

圖6係顯示關於比較例2及實施例4、5之處理結果圖。圖6之圖601~圖603分別係顯示比較例2及實施例4、5中之處理結果之蝕刻速率圖。圖601~圖603中，縱軸顯示以CF4之電漿蝕刻被處理體之SiO2膜時之蝕刻速率〔nm/min〕。且圖601~圖603中，橫軸顯示被處理體之徑向之位 置。亦即，圖601~圖603顯示被處理體之中心位置為「0」，自被處理體之「-150(mm)」之周緣位置至「+150(mm)」之周緣位置之蝕刻速率。 Fig. 6 is a view showing the processing results of Comparative Example 2 and Examples 4 and 5. 601 to 603 of Fig. 6 show etch rate diagrams of the processing results in Comparative Example 2 and Examples 4 and 5, respectively. In Figs. 601 to 603, the vertical axis shows the etching rate [nm/min] when the SiO 2 film of the object to be processed is etched by the plasma of CF 4 . In FIGS. 601 to 603, the horizontal axis shows the position of the radial direction of the object to be processed. That is, FIGS. 601 to 603 show that the center position of the object to be processed is "0", and the etching rate from the peripheral position of "-150 (mm)" of the object to be processed to the peripheral position of "+150 (mm)".

且圖6中，所謂「Point2 average」顯示被處理體之中心位置之蝕刻速率，與自被處理體之中心位置沿徑向恰偏離±30(mm)之位置之蝕刻速率之差。此「Point2 average」在既定值(例如1.0)以上時，意味著發生作為相較於被處理體之周緣部之蝕刻速率，被處理體之中央部之蝕刻速率過大之分布之中央領先分布。 In Fig. 6, "Point 2 average" indicates the difference between the etching rate of the center position of the object to be processed and the etching rate at a position which is exactly ±30 (mm) from the center position of the object to be processed. When the "Point 2 average" is equal to or greater than a predetermined value (for example, 1.0), it means that a central leading distribution of a distribution in which the etching rate of the central portion of the object to be processed is excessive is generated as compared with the etching rate of the peripheral portion of the object to be processed.

如圖6所示，不使偏壓用電力脈衝調變之比較例2中，沿被處理體之徑向複數之位置之蝕刻速率之平均為219.8nm/min，相對於平均蝕刻速率之差異為±4.3%。此平均蝕刻速率與差異皆未滿足預先決定之允許規格。且比較例2中，「Point2 average」為2.5nm/min。此「Point2 average」係顯示發生作為相較於被處理體之周緣部之蝕刻速率，被處理體之中央部之蝕刻速率過大之分布之中央領先分布之值。 As shown in Fig. 6, in Comparative Example 2 in which the bias voltage was not modulated, the average etching rate along the radial direction of the object to be processed was 219.8 nm/min, and the difference with respect to the average etching rate was ±4.3%. This average etch rate and difference do not meet the pre-determined allowable specifications. In Comparative Example 2, "Point 2 average" was 2.5 nm/min. This "Point 2 average" indicates the value of the central leading distribution of the distribution in which the etching rate of the central portion of the object to be processed is excessive as compared with the etching rate of the peripheral portion of the object to be processed.

相對於此，使偏壓用電力脈衝調變，俾負載比為60%，且頻率為10kHz之實施例4中，沿被處理體之徑向複數之位置之蝕刻速率之平均為157.5nm/min，相對於平均蝕刻速率之差異為±4.9%。此平均蝕刻速率與差異皆滿足預先決定之允許規格。且實施例4中，「Point2 average」為1.4nm/min。此「Point2 average」係顯示中央領先分布之程度相較於比較例2已輕減之值。換言之，實施例4中，被處理體之周緣部之蝕刻速率與被處理體之中央部之蝕刻速率之差較比較例2小。 On the other hand, in the fourth embodiment in which the bias voltage is modulated by the power pulse, the load-to-load ratio is 60%, and the frequency is 10 kHz, the average etching rate along the radial direction of the object to be processed is 157.5 nm/min. The difference from the average etch rate is ±4.9%. This average etch rate and difference both meet predetermined allowable specifications. Further, in Example 4, "Point 2 average" was 1.4 nm/min. This "Point2 average" shows the value of the central leading distribution compared to the value of Comparative Example 2. In other words, in the fourth embodiment, the difference between the etching rate of the peripheral portion of the object to be processed and the etching rate of the central portion of the object to be processed is smaller than that of the comparative example 2.

使用大於實施例4之偏壓用電力之實施例5中，沿被處理體之徑向複數之位置之蝕刻速率之平均為188.3nm/min，相對於平均蝕刻速率之差異為±2.8%。此平均蝕刻速率與差異皆滿足預先決定之允許規格。且實施例5中，「Point2 average」為1.2nm/min。此「Point2 average」係顯示中央領先分布之程度相較於比較例2已輕減之值。換言之，實施例5中，被處理體之周緣部之蝕刻速率與被處理體之中央部之蝕刻速率之差較比較例2 小。 In Example 5, which was larger than the bias power for the fourth embodiment, the average etching rate along the radial direction of the object to be processed was 188.3 nm/min, and the difference with respect to the average etching rate was ±2.8%. This average etch rate and difference both meet predetermined allowable specifications. Further, in Example 5, "Point 2 average" was 1.2 nm/min. This "Point2 average" shows the value of the central leading distribution compared to the value of Comparative Example 2. In other words, in Example 5, the difference between the etching rate of the peripheral portion of the object to be processed and the etching rate of the central portion of the object to be processed is Comparative Example 2 small.

如此，比較比較例2與實施例4、5即知，實施例4、5中，使偏壓用電力脈衝調變，同時藉由處理氣體之電漿蝕刻被處理體，藉此相較於不使偏壓用電力脈衝調變之手法，可提升被處理體之被處理面之均一性。 Thus, comparing Comparative Example 2 with Examples 4 and 5, in Examples 4 and 5, the bias power pulse was modulated, and the processed body was etched by the plasma of the processing gas, thereby comparing The method of adjusting the bias voltage with the power pulse can improve the uniformity of the processed surface of the object to be processed.

(比較例3) (Comparative Example 3)

比較例3中，對被處理體進行以2個步驟階段性地進行多晶矽膜之蝕刻程序之電漿處理程序。亦即，於第1步驟以電漿蝕刻多晶矽至既定深度之途中，於第2步驟以電漿蝕刻至既定深度。電漿處理程序使用以下條件以2步驟階段地蝕刻。被處理體使用具有以下構造者。 In Comparative Example 3, a plasma processing procedure was performed in which the object to be processed was subjected to an etching process of a polysilicon film in two steps. That is, in the first step, the polysilicon is plasma-etched to a predetermined depth, and in the second step, the plasma is etched to a predetermined depth. The plasma treatment procedure was etched in two steps using the following conditions. The object to be processed uses the following constructor.

(被處理體) (subject to be processed)

處理對象膜：多晶矽膜 Treatment target film: polycrystalline film

遮罩：SiO2膜 Mask: SiO 2 film

(電漿處理程序) (plasma processing program)

(第1步驟) (Step 1)

處理氣體：HBr/NF3/O2=300/28/17sccm Processing gas: HBr/NF 3 /O 2 =300/28/17sccm

來自第1高頻電源之高頻電力(電漿產生用電力)：800W High-frequency power from the first high-frequency power source (electricity for plasma generation): 800W

電漿產生用電力之頻率：100MHz Frequency of electricity generated by plasma: 100MHz

來自第2高頻電源之高頻電力(偏壓用電力)：1000W High-frequency power (bias power) from the second high-frequency power supply: 1000W

偏壓用電力之頻率：13.56MHz Frequency of bias power: 13.56MHz

針對偏壓用電力之脈衝調變：不實行 Pulse modulation for bias power: not implemented

脈衝調變後偏壓用電力之負載比：100% Load ratio of bias power after pulse modulation: 100%

脈衝調變後偏壓用電力之頻率：0kHz Frequency of power for bias after pulse modulation: 0kHz

溫度(上部電極/處理容器之內壁/下部電極)：80/70/60℃ Temperature (upper electrode / inner wall of the processing vessel / lower electrode): 80/70/60 ° C

(第2步驟) (Step 2)

處理氣體：HBr/NF3/O2=300/34/15sccm Processing gas: HBr/NF 3 /O 2 =300/34/15sccm

來自第1高頻電源之高頻電力(電漿產生用電力)：800W High-frequency power from the first high-frequency power source (electricity for plasma generation): 800W

電漿產生用電力之頻率：100MHz Frequency of electricity generated by plasma: 100MHz

來自第2高頻電源之高頻電力(偏壓用電力)：1000W High-frequency power (bias power) from the second high-frequency power supply: 1000W

偏壓用電力之頻率：13.56MHz Frequency of bias power: 13.56MHz

針對偏壓用電力之脈衝調變：不實行 Pulse modulation for bias power: not implemented

脈衝調變後偏壓用電力之負載比：100% Load ratio of bias power after pulse modulation: 100%

脈衝調變後偏壓用電力之頻率：0kHz Frequency of power for bias after pulse modulation: 0kHz

溫度(上部電極/處理容器之內壁/下部電極)：80/70/60℃ Temperature (upper electrode / inner wall of the processing vessel / lower electrode): 80/70/60 ° C

(實施例6) (Example 6)

實施例6中，於電漿處理程序之第1步驟及第2步驟，使用以下條件使偏壓用電力脈衝調變，同時藉由處理氣體之電漿蝕刻被處理體。關於其他點，與比較例3相同。 In the sixth embodiment, in the first step and the second step of the plasma processing program, the bias power pulse is modulated by the following conditions, and the object to be processed is etched by the plasma of the processing gas. The other points were the same as in Comparative Example 3.

針對偏壓用電力之脈衝調變：實行 Pulse modulation for bias power: implementation

脈衝調變後偏壓用電力之負載比：60% Load ratio of bias power after pulse modulation: 60%

脈衝調變後偏壓用電力之頻率：10kHz Frequency of power for bias after pulse modulation: 10 kHz

(關於比較例3及實施例6之處理結果) (Related results of Comparative Example 3 and Example 6)

圖7A及圖7B係顯示關於比較例3及實施例6之處理結果圖。圖7A之描摹圖701係將比較例3中電漿處理程序後之被處理體之中央部之剖面放大而獲得之攝影之描摹圖。描摹圖702係將比較例3中電漿處理程序後之被處理體之位於中央部與周緣部之中間之中間部之剖面放大而獲得之攝影之描摹圖。描摹圖703係將比較例3中電漿處理程序後之被處理體之周緣部之剖面放大而獲得之攝影之描摹圖。描摹圖711係將實施例6中電漿處理程序後之被處理體之中央部之剖面放大而獲得之攝影之描摹圖。描摹圖712係將實施例6中電漿處理程序後之被處理體之位於中央部與周緣部之中間之中間部之剖面放大而獲得之攝影之描摹圖。描摹圖713係將實施例6中電漿處理程序後之被處理體之周緣部之剖面放大而獲得之攝影之描摹圖。 7A and 7B are views showing the results of processing in Comparative Example 3 and Example 6. FIG. 7A is a photographic diagram obtained by enlarging a cross section of a central portion of the object to be processed after the plasma processing procedure in Comparative Example 3. The drawing 702 is a photographic drawing obtained by enlarging a cross section of the intermediate portion between the center portion and the peripheral portion of the object to be processed after the plasma processing procedure in Comparative Example 3. The drawing 703 is a photographic diagram obtained by enlarging a cross section of the peripheral portion of the object to be processed after the plasma processing procedure in Comparative Example 3. The drawing 711 is a photographic drawing obtained by enlarging a cross section of the central portion of the object to be processed after the plasma processing procedure in the sixth embodiment. The drawing 712 is a photographic diagram obtained by enlarging a cross section of the intermediate portion between the center portion and the peripheral portion of the object to be processed after the plasma processing procedure in the sixth embodiment. The drawing 713 is a photographic diagram obtained by enlarging the cross section of the peripheral portion of the object to be processed after the plasma processing procedure in the sixth embodiment.

且圖7B之圖801係顯示比較例3中被處理體各部之形狀圖。圖811係顯示實施例6中被處理體各部之形狀表。 Further, Fig. 7B is a view showing the shape of each part of the object to be processed in Comparative Example 3. Fig. 811 is a table showing the shape of each part of the object to be processed in the sixth embodiment.

又，圖7A及圖7B中，「Center」、「Middle」及「Edge」分別表示被處理體之中央部、中間部及周緣部。且圖7B中，「Mask Remain」顯示遮罩之高度，「Partial Depth」顯示處理對象膜之蝕刻深度。 In addition, in FIGS. 7A and 7B, "Center", "Middle", and "Edge" respectively indicate the central portion, the intermediate portion, and the peripheral portion of the object to be processed. In Fig. 7B, "Mask Remain" displays the height of the mask, and "Partial Depth" shows the etching depth of the film to be processed.

如圖7A及圖7B所示，不使偏壓用電力脈衝調變之比較例3中，遮罩之高度自被處理體之周緣部朝中央部降低，且處理對象膜之蝕刻深度自被處理體之周緣部朝中央部變深。相對於此，使偏壓用電力脈衝調變，俾負載比為60%，且頻率為10kHz之實施例6中，遮罩之高度及處理對象膜之蝕刻深度自被處理體之周緣部朝中央部大致一定。 As shown in FIG. 7A and FIG. 7B, in Comparative Example 3 in which the bias pulse power pulse is not modulated, the height of the mask is lowered from the peripheral edge portion of the object to be processed toward the center portion, and the etching depth of the processing target film is processed from the inside. The peripheral part of the body becomes deeper toward the central part. On the other hand, in the sixth embodiment in which the bias power pulse is modulated and the load-to-load ratio is 60% and the frequency is 10 kHz, the height of the mask and the etching depth of the film to be processed are directed from the peripheral portion of the object to the center. The department is roughly certain.

如此，比較比較例3與實施例6即知，實施例6中，使偏壓用電力脈衝調變，同時藉由處理氣體之電漿蝕刻被處理體，藉此相較於不使偏壓用電力脈衝調變之手法，可提升被處理體之被處理面之均一性。 Thus, in Comparative Example 3 and Example 6, it is understood that in the sixth embodiment, the bias power pulse is modulated, and the object to be processed is etched by the plasma of the processing gas, thereby making it easier to use the bias voltage. The power pulse modulation method can improve the uniformity of the processed surface of the object to be processed.

(負載比及頻率對中央領先分布造成之影響之驗證結果(其2)) (Verification of the effect of load ratio and frequency on the central leading distribution (2))

圖8A及圖8B係顯示負載比及頻率對中央領先分布造成之影響之驗證結果(其2)圖。圖8A及圖8B中，縱軸表示Point2 average(nm/min)。且圖8A中，橫軸表示脈衝調變後偏壓用電力之負載比(%)。且圖8B中，橫軸表示脈衝調變後偏壓用電力之頻率(Hz)。且圖8A中，一併表示分別對應比較例1、比較例2、實施例1、實施例3及實施例5之測定點。且圖8B中，一併表示分別對應比較例1、比較例2及實施例1~實施例3之測定點。又，圖8A及圖8B中，所謂Point2 average表示被處理體之中心位置之蝕刻速率，與自被處理體之中心位置沿徑向恰偏離±30(mm)之位置之蝕刻速率之差。 8A and 8B are diagrams showing the verification result (2) of the influence of the load ratio and frequency on the central leading distribution. In FIGS. 8A and 8B, the vertical axis represents Point2 average (nm/min). In Fig. 8A, the horizontal axis represents the duty ratio (%) of the bias power after the pulse modulation. In Fig. 8B, the horizontal axis represents the frequency (Hz) of the bias power after the pulse modulation. Further, in Fig. 8A, measurement points corresponding to Comparative Example 1, Comparative Example 2, Example 1, Example 3, and Example 5 are shown. Further, in Fig. 8B, the measurement points corresponding to Comparative Example 1, Comparative Example 2, and Examples 1 to 3, respectively, are shown. Further, in FIGS. 8A and 8B, the point 2 average indicates the difference between the etching rate of the center position of the object to be processed and the etching rate at a position which is exactly ±30 (mm) from the center position of the object to be processed.

如圖8A及圖8B所示，相較於不使偏壓用電力脈衝調變之比較例1及比較例2，使偏壓用電力脈衝調變之各實施例中，「Point2 average」較小。亦即，已知各實施例中，中央領先分布之程度相較於比較例1及比較例2已輕減。因此，本案發明人等就存在於分別對應各實施例之測定點周圍之複數之測定點測定「Point2 average」。此測定之結果，使偏壓用電力脈衝 調變，俾負載比為10%~70%，且頻率為5kHz~20kHz時，「Point2 average」滿足預先決定之允許規格(例如在1.2以下)。且使偏壓用電力脈衝調變，俾負載比為40%~60%，且頻率為5kHz~10kHz時，相較於使偏壓用電力脈衝調變，俾負載比為10%~70%，且頻率為5kHz~20kHz時，「Point2 average」較小。亦即，經確認宜使偏壓用電力脈衝調變，俾負載比為10%~70%，且頻率為5kHz~20kHz，負載比為40%~60%，且頻率為5kHz~10kHz更佳，藉此，可使中央領先分布之程度輕減。 As shown in FIG. 8A and FIG. 8B, in each of the examples in which the bias power pulse is modulated, the "Point 2 average" is smaller than in Comparative Example 1 and Comparative Example 2 in which the bias power pulse is not modulated. . That is, it is known that the degree of the central leading distribution in each of the embodiments has been reduced as compared with Comparative Example 1 and Comparative Example 2. Therefore, the inventors of the present invention measured "Point 2 average" in the measurement points corresponding to the plural points around the measurement points of the respective examples. As a result of this measurement, the power pulse for biasing Modulation, the 俾 load ratio is 10% to 70%, and the frequency is 5 kHz to 20 kHz, "Point 2 average" meets the predetermined allowable specifications (for example, below 1.2). Moreover, the bias voltage is modulated by the power pulse, the load-to-load ratio is 40% to 60%, and the frequency is 5 kHz to 10 kHz, and the load-to-load ratio is 10% to 70% compared with the power pulse for biasing. When the frequency is 5 kHz to 20 kHz, "Point 2 average" is small. That is, it is confirmed that the bias voltage is modulated by the power pulse, the load-to-load ratio is 10% to 70%, the frequency is 5 kHz to 20 kHz, the duty ratio is 40% to 60%, and the frequency is preferably 5 kHz to 10 kHz. In this way, the degree of central leading distribution can be reduced.

(實施例7) (Example 7)

實施例7中，作為電漿產生用電力、偏壓用電力、脈衝調變後偏壓用電力之負載比及脈衝調變後偏壓用電力之頻率，使用以下條件。關於其他點，與實施例1相同。 In the seventh embodiment, the following conditions are used as the power generation frequency of the plasma, the power for the bias voltage, the duty ratio of the power for the pulse after the pulse modulation, and the frequency of the power for the bias voltage after the pulse modulation. The other points are the same as in the first embodiment.

來自第1高頻電源之高頻電力(電漿產生用電力)：400W High-frequency power from the first high-frequency power source (electricity for plasma generation): 400W

來自第2高頻電源之高頻電力(偏壓用電力)：1850W High-frequency power from the second high-frequency power supply (bias power): 1850W

脈衝調變後偏壓用電力之負載比：30% Load ratio of bias power after pulse modulation: 30%

脈衝調變後偏壓用電力之頻率：10kHz Frequency of power for bias after pulse modulation: 10 kHz

(實施例8~實施例10) (Examples 8 to 10)

實施例8~實施例10中，分別作為處理氣體使用以下之處理氣體。關於其他點，與實施例7相同。 In the eighth to tenth embodiments, the following processing gases were used as the processing gas. The other points are the same as in the seventh embodiment.

實施例8：HBr/NF3/O2/Ar=300/34/24/50sccm Example 8: HBr/NF 3 /O 2 /Ar=300/34/24/50 sccm

實施例9：HBr/NF3/O2/Ar=300/34/24/100sccm Example 9: HBr/NF 3 /O 2 /Ar=300/34/24/100 sccm

實施例10：HBr/NF3/O2/Ar=300/34/24/200sccm Example 10: HBr/NF 3 /O 2 /Ar=300/34/24/200 sccm

(關於實施例7~實施例10之處理結果) (Related results of Example 7 to Example 10)

圖9A及圖9B係顯示實施例7~10中之處理結果圖。圖9A之圖901~圖904分別係顯示實施例7~實施例10中被處理體之蝕刻速率圖。圖901~圖904中，縱軸顯示藉由HBr/NF3/O2之電漿或HBr/NF3/O2/Ar之電漿蝕刻被處理體之SiO2膜時之蝕刻速率〔nm/min〕。且圖901~圖904中，橫軸顯示被處理體之徑向之位置。亦即，圖901~圖904顯示被處理體之中心位置為「0」，自被處理體之「-150(mm)」之周緣位置至「+150(mm)」 之周緣位置之蝕刻速率。 9A and 9B are views showing the results of the processing in Examples 7 to 10. 901 to 904 of Fig. 9A are diagrams showing etching rates of the objects to be processed in the seventh to tenth embodiments, respectively. FIG FIGS. 901 to 904, the vertical axis shows by HBr / NF 3 / O of plasma or HBr 2 / NF 3 / O 2 / Ar plasma etching when the etching rate of the treated body of the SiO 2 film [nm / Min]. In FIGS. 901 to 904, the horizontal axis shows the position of the radial direction of the object to be processed. That is, FIGS. 901 to 904 show that the center position of the object to be processed is "0", and the etching rate from the peripheral position of "-150 (mm)" of the object to be processed to the peripheral position of "+150 (mm)".

且圖9B中，縱軸表示Point2 average(nm/min)，橫軸表示Ar之流量(sccm)。 In FIG. 9B, the vertical axis represents Point2 average (nm/min), and the horizontal axis represents the flow rate (sccm) of Ar.

且圖9A及圖9B中，所謂「Point2 average」表示被處理體之中心位置之蝕刻速率，與自被處理體之中心位置沿徑向朝周緣側恰偏離±30(mm)之位置之蝕刻速率之差。此「Point2 average」在既定值(例如1.2)以上時，意味著發生作為相較於被處理體之周緣部之蝕刻速率，被處理體之中央部之蝕刻速率過大之分布之中央領先分布。 In addition, in FIG. 9A and FIG. 9B, the "Point 2 average" indicates the etching rate of the center position of the object to be processed, and the etching rate at a position which is exactly ±30 (mm) from the center position of the object to be processed in the radial direction toward the peripheral side. Difference. When the "Point 2 average" is equal to or greater than a predetermined value (for example, 1.2), it means that a central leading distribution of a distribution in which the etching rate of the central portion of the object to be processed is excessive is generated as compared with the etching rate of the peripheral portion of the object to be processed.

如圖9A及圖9B所示，不使用Ar之實施例7中，沿被處理體之徑向複數之位置之蝕刻速率之平均為25.5nm/min，相對於平均蝕刻速率之差異為±3.2%。此平均蝕刻速率與差異皆滿足預先決定之允許規格。且實施例7中，「Point2 average」為0.3nm/min。此「Point2 average」係顯示中央領先分布之程度較比較例1輕減之值。換言之，實施例7中，被處理體之周緣部之蝕刻速率與被處理體之中央部之蝕刻速率之差較比較例1小。 As shown in FIG. 9A and FIG. 9B, in Example 7 in which Ar is not used, the average etching rate along the radial direction of the object to be processed is 25.5 nm/min, and the difference from the average etching rate is ±3.2%. . This average etch rate and difference both meet predetermined allowable specifications. Further, in Example 7, "Point 2 average" was 0.3 nm/min. This "Point2 average" shows the value of the central leading distribution which is lighter than that of Comparative Example 1. In other words, in the seventh embodiment, the difference between the etching rate of the peripheral portion of the object to be processed and the etching rate of the central portion of the object to be processed is smaller than that of the comparative example 1.

且使用Ar之實施例8~實施例10中，沿被處理體之徑向複數之位置之蝕刻速率之平均分別為22.6nm/min、22.8nm/min及23.1nm/min。且實施例8~實施例10中，相對於平均蝕刻速率之差異分別為±6.1%、±4.7%及±3.3%。此等平均蝕刻速率與差異皆滿足預先決定之允許規格。且實施例8~實施例10中，「Point2 average」分別為0.0nm/min、-0.1nm/min及-0.6nm/min。此等「Point2 average」係顯示中央領先分布之程度較比較例1輕減之值。換言之，實施例8~實施例10中，被處理體之周緣部之蝕刻速率與被處理體之中央部之蝕刻速率之差較比較例1小。 Further, in Examples 8 to 10 in which Ar was used, the average etching rates along the radial direction of the object to be processed were 22.6 nm/min, 22.8 nm/min, and 23.1 nm/min, respectively. Further, in Examples 8 to 10, the difference with respect to the average etching rate was ±6.1%, ±4.7%, and ±3.3%, respectively. These average etch rates and differences all meet predetermined allowable specifications. Further, in Examples 8 to 10, "Point 2 average" was 0.0 nm/min, -0.1 nm/min, and -0.6 nm/min, respectively. These "Point 2 average" systems show the extent to which the central leading distribution is deducted from Comparative Example 1. In other words, in Examples 8 to 10, the difference between the etching rate of the peripheral portion of the object to be processed and the etching rate of the central portion of the object to be processed was smaller than that of Comparative Example 1.

且使用Ar之實施例8~實施例10中，Ar之流量愈增加，「Point2 average」愈小。依其結果可知，可藉由變更Ar之流量控制被處理體之中央部之蝕刻速率及CD為所希望之值。作為Ar之流量愈增加，「Point2 average」愈小之理由，可想像以下之理由。亦即，可想像此因電漿中之離子中易於集中在非處理體之中央部之負離子(例如Br-)因作為正離子之Ar離子而被抵銷，結果，妨礙到被處理體之中央部之蝕刻之進展。 Further, in Examples 8 to 10 in which Ar was used, the flow rate of Ar increased, and the smaller the "Point 2 average". From the results, it is understood that the etching rate and CD of the central portion of the object to be processed can be controlled to a desired value by changing the flow rate of Ar. As the flow rate of Ar increases, the reason why the "Point2 average" is smaller is conceivable for the following reasons. In other words, it is conceivable that negative ions (for example, Br - ) which are easily concentrated in the central portion of the non-treated body in the plasma are offset by Ar ions as positive ions, and as a result, hinder the center of the object to be processed. The progress of the etching of the Ministry.

(實施例11~實施例14) (Examples 11 to 14)

實施例11~實施例14中，分別作為偏壓用電力使用以下條件。關於其他點，與實施例7相同。 In the eleventh to the fourteenth embodiments, the following conditions were used as the bias power. The other points are the same as in the seventh embodiment.

實施例11：640W Example 11: 640W

實施例12：1350W Example 12: 1350W

實施例13：2350W Example 13: 2350W

實施例14：2850W Example 14: 2850W

(關於實施例11~實施例14之處理結果) (Related results of Examples 11 to 14)

圖10A及圖10B係顯示實施例11~實施例14中之處理結果圖。圖10A之圖1001及圖1002分別係顯示實施例12及實施例13中被處理體之蝕刻速率圖。圖1001及圖1002中，縱軸表示以HBr/NF3/O2之電漿或HBr/NF3/O2/Ar之電漿蝕刻被處理體之SiO2膜時之蝕刻速率〔nm/min〕。且圖1001及圖1002中，橫軸表示被處理體之徑向之位置。亦即，圖1001及圖1002顯示被處理體之中心位置為「0」，自被處理體之「-150(mm)」之周緣位置至「+150(mm)」之周緣位置之蝕刻速率。 10A and 10B are views showing the results of processing in the eleventh embodiment to the fourteenth embodiment. 1001 and 1002 of Fig. 10A are graphs showing etching rates of the objects to be processed in the embodiment 12 and the embodiment 13, respectively. FIG. 1001 and Fig. 1002, the vertical axis represents HBr / NF 3 / O 2 plasma or the HBr / NF 3 / O 2 / Ar of the plasma etching process is an etch rate while the body of the SiO 2 film [nm / min ]. In FIGS. 1001 and 1002, the horizontal axis represents the position of the radial direction of the object to be processed. That is, FIGS. 1001 and 1002 show that the center position of the object to be processed is "0", and the etching rate from the peripheral position of "-150 (mm)" of the object to be processed to the peripheral position of "+150 (mm)".

且圖10B中，縱軸表示Point2 average(nm/min)，橫軸表示偏壓用電力(W)。 In FIG. 10B, the vertical axis represents Point2 average (nm/min), and the horizontal axis represents bias power (W).

且圖10A及圖10B中，所謂「Point2 average」表示被處理體之中心位置之蝕刻速率，與自被處理體之中心位置沿徑向朝周緣側恰偏離±30(mm)之位置之蝕刻速率之差。此「Point2 average」在既定值(例如1.2)以上時，意味著發生作為相較於被處理體之周緣部之蝕刻速率，被處理體之中央部之蝕刻速率過大之分布之中央領先分布。 In addition, in FIG. 10A and FIG. 10B, the "Point 2 average" indicates the etching rate of the center position of the object to be processed, and the etching rate at a position which is exactly ±30 (mm) from the center position of the object to be processed in the radial direction toward the peripheral side. Difference. When the "Point 2 average" is equal to or greater than a predetermined value (for example, 1.2), it means that a central leading distribution of a distribution in which the etching rate of the central portion of the object to be processed is excessive is generated as compared with the etching rate of the peripheral portion of the object to be processed.

如圖10A及圖10B所示，偏壓用電力為1350W之實施例12，及偏壓用電力為2350W之實施例13中，沿被處理體之徑向複數之位置之蝕刻速率之平均分別為21.0nm/min及29.4nm/min。且實施例12及實施例13中，相對於平均蝕刻速率之差異分別為±4.9%及±4.1%。此等平均蝕刻速率與差異皆滿足預先決定之允許規格。且實施例11~實施例14中，「Point2 average」分別為0.5nm/min、0.1nm/min、0.5nm/min及1.1nm/min。此等「Point2 average」係顯示中央領先分布之程度較比較例1輕減之值。換言之，實施例11~實施例14中，被處理體之周緣部之蝕刻速率與被處理體之中央部之蝕刻速率之差較比較例1小。 As shown in FIG. 10A and FIG. 10B, in the embodiment 12 in which the bias power is 1350 W and the bias power is 2350 W, the average etching rates along the radial direction of the object to be processed are respectively 21.0 nm/min and 29.4 nm/min. Further, in Examples 12 and 13, the difference with respect to the average etching rate was ±4.9% and ±4.1%, respectively. These average etch rates and differences all meet predetermined allowable specifications. Further, in Examples 11 to 14, "Point 2 average" was 0.5 nm/min, 0.1 nm/min, 0.5 nm/min, and 1.1 nm/min, respectively. These "Point 2 average" systems show the extent to which the central leading distribution is deducted from Comparative Example 1. In other words, in Examples 11 to 14, the difference between the etching rate of the peripheral portion of the object to be processed and the etching rate of the central portion of the object to be processed was smaller than that of Comparative Example 1.

且如圖10B所示，實施例12~實施例14中，偏壓用電力愈增加，「Point2 average」愈大。自其結果可知，可藉由變更偏壓用電力控制被處理體之中央部之蝕刻速率及CD為所希望之值。 As shown in FIG. 10B, in the embodiment 12 to the embodiment 14, the electric power for biasing is increased, and the "Point2 average" is larger. As a result, it is understood that the etching rate and CD of the central portion of the object to be processed can be controlled to a desired value by changing the bias power.

S101~S103‧‧‧步驟 S101~S103‧‧‧Steps

Claims (13)

一種電漿處理方法，包含：氣體供給程序，對配置有被處理體之處理容器之內部供給處理氣體；電力供給程序，供給如下之電力：電漿產生用電力，用來產生對該處理容器之內部所供給之處理氣體的電漿，頻率為100MHz~150MHz；與偏壓用電力，其頻率低於該電漿產生用電力；及蝕刻程序，一面對該偏壓用電力施以脈衝調變，使其負載比成為10%~70%，且頻率為5kHz~20kHz，一面藉由該處理氣體之電漿蝕刻被處理體。 A plasma processing method comprising: a gas supply program for supplying a processing gas to a processing container in which a target object is disposed; and a power supply program for supplying electric power for plasma generation for generating a processing container; The plasma of the processing gas supplied therein has a frequency of 100 MHz to 150 MHz; the power for biasing is lower than the power for generating the plasma; and the etching process is applied to the bias power. The load ratio is 10% to 70%, and the frequency is 5 kHz to 20 kHz, and the object to be processed is etched by plasma of the processing gas. 如申請專利範圍第1項之電漿處理方法，其中該蝕刻程序中，一面對該偏壓用電力施以脈衝調變，使其負載比成為40%~60%，且頻率為5kHz~10kHz，一面藉由該處理氣體之電漿蝕刻被處理體。 The plasma processing method according to claim 1, wherein in the etching process, the bias power is pulse-modulated to have a load ratio of 40% to 60% and a frequency of 5 kHz to 10 kHz. The object to be processed is etched by the plasma of the processing gas. 如申請專利範圍第1或2項之電漿處理方法，其中該偏壓用電力之頻率為0.4kHz~13.56MHz。 A plasma processing method according to claim 1 or 2, wherein the frequency of the bias power is from 0.4 kHz to 13.56 MHz. 如申請專利範圍第1或2項之電漿處理方法，其中該被處理體包含多晶矽膜與SiO2膜或有機膜，該蝕刻程序中，以該SiO2膜或該有機膜為遮罩，藉由該處理氣體之電漿蝕刻該多晶矽膜。 The plasma processing method according to claim 1 or 2, wherein the object to be processed comprises a polycrystalline germanium film and a SiO 2 film or an organic film, and in the etching process, the SiO 2 film or the organic film is used as a mask. The polysilicon film is etched from the plasma of the process gas. 如申請專利範圍第1或2項之電漿處理方法，其中該被處理體包含SiO2膜與有機膜或多晶矽膜，該蝕刻程序中，以該有機膜或該多晶矽膜為遮罩，藉由該處理氣體之電漿蝕刻該SiO2膜。 The plasma processing method of claim 1 or 2, wherein the object to be processed comprises a SiO 2 film and an organic film or a polysilicon film, wherein the organic film or the polysilicon film is masked by the etching process. The plasma of the process gas etches the SiO 2 film. 如申請專利範圍第1或2項之電漿處理方法，其中該被處理體包含SiO2膜與多晶矽膜之疊層膜、及有機膜，該蝕刻程序中，以該有機膜為遮罩，藉由該處理氣體之電漿蝕刻該疊層膜。 The plasma processing method according to claim 1 or 2, wherein the object to be processed comprises a laminated film of a SiO 2 film and a polycrystalline germanium film, and an organic film, wherein the organic film is used as a mask. The laminated film is etched from the plasma of the processing gas. 如申請專利範圍第6項之電漿處理方法，其中該疊層膜至少堆疊24層以上。 The plasma processing method of claim 6, wherein the laminated film is stacked at least 24 layers or more. 如申請專利範圍第1或2項之電漿處理方法，其中該處理氣體包含溴或氯、氟、與氧。 A plasma processing method according to claim 1 or 2, wherein the processing gas comprises bromine or chlorine, fluorine, and oxygen. 如申請專利範圍第8項之電漿處理方法，其中該處理氣體更包含氬。 The plasma processing method of claim 8, wherein the processing gas further comprises argon. 如申請專利範圍第1或2項之電漿處理方法，其中該處理氣體包含CF類氣體。 A plasma processing method according to claim 1 or 2, wherein the processing gas contains a CF-based gas. 如申請專利範圍第1或2項之電漿處理方法，其中該偏壓用電力為500W~3000W。 The plasma processing method according to claim 1 or 2, wherein the bias power is 500 W to 3000 W. 如申請專利範圍第1或2項之電漿處理方法，其中令該蝕刻程序蝕刻之該被處理體之中心位置的蝕刻速率，與自該被處理體之中心位置沿徑向朝周緣側偏離既定距離之位置的蝕刻速率之差為-1.2(nm/min)~1.2(nm/min)。 The plasma processing method according to claim 1 or 2, wherein an etching rate of a center position of the object to be processed which is etched by the etching process is deviated from a center position of the object to be processed in a radial direction toward a peripheral side The difference in etching rate at the position of the distance is -1.2 (nm/min) to 1.2 (nm/min). 一種電漿處理裝置，包含：處理容器，配置有被處理體；排氣部，用來使該處理容器之內部減壓；氣體供給部，用來對該處理容器之內部供給處理氣體；及控制部，實行下列程序：氣體供給程序，對該處理容器之內部供給處理氣體；電力供給程序，供給如下之電力：電漿產生用電力，用來產生對該處理容器之內部所供給之處理氣體的電漿，頻率為100MHz~150MHz；與偏壓用電力，其頻率低於該電漿產生用電力；及蝕刻程序，一面對該偏壓用電力施以脈衝調變，使其負載比成為10%~70%，且頻率為5kHz~20kHz，一面藉由該處理氣體之電漿蝕刻被處理體。 A plasma processing apparatus comprising: a processing container configured with a processed object; an exhaust portion for decompressing the inside of the processing container; a gas supply portion for supplying a processing gas to the inside of the processing container; and controlling The first program is a gas supply program for supplying a processing gas to the inside of the processing container, and a power supply program for supplying electric power for plasma generation for generating a processing gas supplied to the inside of the processing container. The plasma has a frequency of 100 MHz to 150 MHz; the frequency of the bias voltage is lower than the power for generating the plasma; and the etching process is performed by applying a pulse modulation to the bias power to make the load ratio 10 %~70%, and the frequency is 5 kHz to 20 kHz, and the object to be processed is etched by the plasma of the processing gas.
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