TW201441395A - Batch type apparatus for processing substrate - Google Patents
Batch type apparatus for processing substrate Download PDFInfo
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- TW201441395A TW201441395A TW103104743A TW103104743A TW201441395A TW 201441395 A TW201441395 A TW 201441395A TW 103104743 A TW103104743 A TW 103104743A TW 103104743 A TW103104743 A TW 103104743A TW 201441395 A TW201441395 A TW 201441395A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明是關於一種批次式基板處理裝置。更詳而言之，是關於一種批次式基板處理裝置，其可形成收容氣體供給流路之氣體供給部而使其突出於基板處理部其中一側外周面上，便可使進行基板處理步驟之內部空間的大小減少。 The present invention relates to a batch substrate processing apparatus. More specifically, the present invention relates to a batch type substrate processing apparatus which can form a gas supply portion for accommodating a gas supply flow path so as to protrude from one outer peripheral surface of a substrate processing portion, thereby allowing a substrate processing step to be performed. The size of the internal space is reduced.
為了製造半導體元件，必須進行在如矽晶圓之基板上蒸鍍需要之薄膜的步驟。薄膜蒸鍍步驟中，主要使用了噴鍍法(Sputtering)、化學氣相蒸鍍法(CVD：Chemical Vapor Deposition)、原子層蒸鍍法(ALD：Atomic Layer Deposition)等。 In order to manufacture a semiconductor element, it is necessary to perform a step of vapor-depositing a desired film on a substrate such as a germanium wafer. In the thin film vapor deposition step, sputtering, CVD (Chemical Vapor Deposition), and atomic layer deposition (ALD: Atomic Layer Deposition) are mainly used.
噴鍍法是一種技術，其是使以電漿狀態所生成之氬離子與對象物之表面撞擊，而將從對象物之表面脫離之對象物物質在基板上作為薄膜來蒸鍍。噴鍍法具有可形成接著性優異之高純度薄膜的優點，但對於要形成具有高縱 橫比(High Aspect Ratio)之微細圖型，便有極限存在。 The thermal spraying method is a technique in which an argon ion generated in a plasma state collides with a surface of an object, and an object substance which is detached from the surface of the object is vapor-deposited as a thin film on the substrate. The sputtering method has the advantage of being able to form a high-purity film excellent in adhesion, but is formed to have a high vertical There is a limit to the fine pattern of the High Aspect Ratio.
化學氣相蒸鍍法是將多種氣體朝反應室注入，利用如光或電漿之高能量使所誘導之氣體與反應氣體進行化學反應，藉此在基板上使薄膜蒸鍍之技術。化學氣相蒸鍍法由於是利用快速地產生之化學反應，因此要控制原子熱力學的(Thermodynamic)安定性非常困難，會有薄膜之物理性、化學性及電性之特性降低的問題。 The chemical vapor deposition method is a technique in which a plurality of gases are injected into a reaction chamber, and the induced gas is chemically reacted with the reaction gas by high energy such as light or plasma, thereby vapor-depositing the thin film on the substrate. Since the chemical vapor deposition method utilizes a chemical reaction that is rapidly generated, it is extremely difficult to control the thermodynamic stability of the atom, and there is a problem that the physical, chemical, and electrical properties of the film are lowered.
原子層蒸鍍法是將反應氣體即來源氣體與沖洗氣體交互地供給，在基板上來蒸鍍原子層單位之薄膜的技術。原子層蒸鍍法為了克服段差被覆性(Step Coverage)的極限而利用表面反應，故，對於形成具有高縱橫比之微細圖型相當適切，而有薄膜之電性與物理性特性優異的優點。 The atomic layer vapor deposition method is a technique in which a reaction gas, that is, a source gas and a flushing gas are alternately supplied, and a film of an atomic layer unit is vapor-deposited on a substrate. Since the atomic layer vapor deposition method utilizes the surface reaction in order to overcome the limit of the step coverage, it is advantageous in forming a fine pattern having a high aspect ratio, and is excellent in electrical properties and physical properties of the film.
原子層蒸鍍裝置可區別為在氣室將基板1片1片裝載而使蒸鍍步驟進行之枚葉式、與在氣室將複數片基板裝載而一口氣地使蒸鍍步驟進行之批次(Batch)式。 The atomic layer vapor deposition apparatus can be distinguished as a batch type in which one sheet of a substrate is loaded in a gas chamber to carry out a vapor deposition step, and a batch in which a plurality of substrates are loaded in a gas chamber and the vapor deposition step is performed in one go. (Batch) style.
圖1是顯示習知之批次式原子層蒸鍍裝置的立體圖。 Fig. 1 is a perspective view showing a conventional batch type atomic layer vapor deposition apparatus.
習知之批次式原子層蒸鍍裝置包含有將基板40裝載並形成進行蒸鍍步驟之空間之氣室11的工程管10。且，前述工程管10之內部設有：如蒸鍍步驟所需要之氣體供給部20、氣體排出部30等之元件。且，並包含有：與工程管10密閉結合之台座部51、朝工程管10內部***之突出部53、及包含可使複數片基板40積層之支持桿55的舟皿50。 A conventional batch type atomic layer vapor deposition apparatus includes a process pipe 10 in which a substrate 40 is loaded and a gas chamber 11 in which a vapor deposition step is formed is formed. Further, the inside of the engineering pipe 10 is provided with elements such as a gas supply unit 20 and a gas discharge unit 30 which are required for the vapor deposition step. Further, a pedestal portion 51 that is hermetically coupled to the engineering pipe 10, a protruding portion 53 that is inserted into the inside of the engineering pipe 10, and a boat 50 that includes a support rod 55 that can laminate the plurality of substrates 40 are included.
如前述之習知的批次式原子層蒸鍍裝置具有基 板40與工程管10內周面之間的距離d1’會比基板40與氣體供給部20之間的距離d2’更大之值(d1’>d2’)。即，習知之批次式原子層蒸鍍裝置由於在工程管10內部[或氣室11]設有氣體供給部20、氣體排出部30等之元件，因此會有工程管10內部氣室11之體積浪費地變大的問題。 The conventional atomic layer vapor deposition apparatus as described above has a base The distance d1' between the plate 40 and the inner circumferential surface of the engineering pipe 10 is larger than the distance d2' between the substrate 40 and the gas supply portion 20 (d1' > d2'). That is, in the conventional batch type atomic layer vapor deposition apparatus, since the components such as the gas supply part 20 and the gas discharge part 30 are provided inside the engineering pipe 10 [or the gas chamber 11], there is a gas chamber 11 inside the engineering pipe 10. The problem of a wasteful volume.
藉此，為了進行蒸鍍步驟，由於必須供給大量工程氣體而使其充滿氣室11，因此會有工程氣體之供給所需要之時間的消耗與工程氣體之浪費使用變大，蒸鍍步驟後用以將存在於氣室11內部之大量工程氣體排出之時間的消耗意會變大的問題。 Therefore, in order to carry out the vapor deposition step, since it is necessary to supply a large amount of engineering gas to fill the gas chamber 11, the time required for the supply of the engineering gas and the wasteful use of the engineering gas become large, and the vapor deposition step is used. The problem of the consumption of time for discharging a large amount of engineering gas existing inside the gas chamber 11 becomes large.
另一方面，習知之原子層蒸鍍裝置作為用以易於承受氣室11內部之壓力之理想的形態，一般使用直立型之工程管10。但，因直立型之氣室11的上部空間12，在工程氣體之供給與排出很多時間會消耗，而會有使工程氣體之浪費使用產生的問題。 On the other hand, the conventional atomic layer vapor deposition apparatus generally uses an upright type engineering pipe 10 as an ideal form for easily accommodating the pressure inside the gas chamber 11. However, since the upper space 12 of the upright type air chamber 11 is consumed for a large period of supply and discharge of the engineering gas, there is a problem that wasteful use of the engineering gas occurs.
與用以蒸鍍原子層之批次式裝置相關之先行技術揭示有韓國專利公開公報第10-2008-0028963號、韓國專利公開公報第10-2011-0087580號等。 The prior art relating to a batch type apparatus for vapor-depositing an atomic layer is disclosed in Korean Patent Laid-Open Publication No. 10-2008-0028963, Korean Patent Publication No. 10-2011-0087580, and the like.
[專利文獻1]韓國專利公開公報第10-2008-0028963號 [Patent Document 1] Korean Patent Laid-Open Publication No. 10-2008-0028963
[專利文獻2]韓國專利公開公報第10-2011-0087580號 [Patent Document 2] Korean Patent Publication No. 10-2011-0087580
本發明室為了解決上述習知技術之諸問題而成者，目的在於提供一種批次式基板處理裝置，其可使進行基板處理步驟之內部空間的大小減少。 In order to solve the problems of the above-described conventional techniques, the present invention has been made in an effort to provide a batch type substrate processing apparatus which can reduce the size of the internal space in which the substrate processing step is performed.
又，本發明之目的在於提供一種批次式基板處理裝置，其可使進行基板處理步驟之內部空間的大小減少，並使使用於基板處理步驟之基板處理氣體的使用量節約。 Further, an object of the present invention is to provide a batch type substrate processing apparatus which can reduce the size of the internal space in which the substrate processing step is performed and save the amount of use of the substrate processing gas used in the substrate processing step.
進而，本發明之目的在於提供一種批次式基板處理裝置，其可使進行基板處理步驟之內部空間的大小減少，並藉由使使用於於基板處理步驟之基板處理氣體的供給與排出圓滑進行，來使基板處理步驟時間劃時代地減少。 Further, an object of the present invention is to provide a batch type substrate processing apparatus which can reduce the size of an internal space in which a substrate processing step is performed, and smoothly perform supply and discharge of substrate processing gas used in a substrate processing step. In order to reduce the substrate processing step time.
又，本發明之目的在於提供一種批次式基板處理裝置，其從直立型使基板處理部之形態變形而使表面為平坦，使內部空間之大小減少。 Further, an object of the present invention is to provide a batch type substrate processing apparatus which deforms the shape of a substrate processing portion from an upright type to flatten the surface and reduce the size of the internal space.
為了達成上述之目的，本發明之一實施形態之批次式基板處理裝置之特徵在於包含有：基板處理部，將積層於基板積載部的複數片基板收容並處理；氣體供給部，形成於前述基板處理部其中一側外周面上，且收容基板處理氣體所流動之至少1個氣體供給流路並朝前述基板處理部供給基板處理氣體；又，基板與前述基板處理部內周面之間的距離為d1，基板與前述氣體供給流路之間的距離為d2時，d1≦d2。 In order to achieve the above object, a batch type substrate processing apparatus according to an embodiment of the present invention includes a substrate processing unit that stores and processes a plurality of substrates stacked on a substrate stacking portion, and a gas supply unit formed in the foregoing One of the substrate processing units includes at least one gas supply flow path through which the substrate processing gas flows, and supplies the substrate processing gas to the substrate processing unit; and the distance between the substrate and the inner peripheral surface of the substrate processing unit When d1, the distance between the substrate and the gas supply flow path is d2, d1≦d2.
根據如上所述所構成之本發明，會有始進行基板處理步驟之內部空間的大小減少的效果。 According to the present invention configured as described above, there is an effect that the size of the internal space in which the substrate processing step is started is reduced.
又，本發明由於使進行基板處理步驟之內部空間的大小減少，並可節約使用於基板處理步驟之基板處理氣體的使用量，因此可有節約基板處理步驟費用之效果。 Moreover, in the present invention, since the size of the internal space for performing the substrate processing step is reduced, and the amount of use of the substrate processing gas used in the substrate processing step can be saved, the effect of saving the cost of the substrate processing step can be achieved.
進而，本發明由於使進行基板處理步驟之內部空間的大小減少，並藉由使使用於基板處理步驟之基板處理氣體供給與排出圓滑，而基板處理步驟時間會劃時代地減少，因此會有基板處理步驟之生產性提升的效果。 Further, in the present invention, since the size of the internal space in which the substrate processing step is performed is reduced, and the substrate processing gas supply and discharge used in the substrate processing step are smoothed, the substrate processing step time is steadily reduced, and thus the substrate processing is performed. The effect of the productivity improvement of the steps.
又，本發明從直立型使基板處理部之形態變形而使表面為平坦，便會有使內部空間之大小減少的效果。 Moreover, in the present invention, the shape of the substrate processing portion is deformed from the upright type, and the surface is made flat, which has an effect of reducing the size of the internal space.
40‧‧‧基板 40‧‧‧Substrate
100‧‧‧基板處理部 100‧‧‧Substrate Processing Department
110‧‧‧基板處理部之內部空間 110‧‧‧Internal space of the substrate processing department
120、130‧‧‧補強肋部 120, 130‧‧‧ reinforcing ribs
150、160‧‧‧加熱器 150, 160‧‧‧ heater
200‧‧‧氣體供給部 200‧‧‧Gas Supply Department
250‧‧‧氣體供給流路 250‧‧‧ gas supply flow path
251‧‧‧氣體供給管 251‧‧‧ gas supply pipe
252‧‧‧吐出孔 252‧‧‧ spit hole
300‧‧‧氣體排出部 300‧‧‧ gas discharge department
350‧‧‧氣體排出流路 350‧‧‧ gas discharge flow path
351‧‧‧氣體排出管 351‧‧‧ gas discharge pipe
352‧‧‧排出孔 352‧‧‧Exhaust hole
400‧‧‧殼體 400‧‧‧shell
450‧‧‧歧管 450‧‧‧Management
500‧‧‧基板積載部 500‧‧‧Substrate stowage department
d1‧‧‧基板與基板處理部之內周面之間的距離 d1‧‧‧Distance between the substrate and the inner peripheral surface of the substrate processing unit
d2‧‧‧基板與氣體供給流路之間的距離 d2‧‧‧Distance between substrate and gas supply flow path
[圖1]是顯示習知之批次式原子層蒸鍍裝置的立體圖。 Fig. 1 is a perspective view showing a conventional batch type atomic layer vapor deposition device.
[圖2]是顯示本發明一實施形態之批次式基板處理裝置的立體圖。 Fig. 2 is a perspective view showing a batch type substrate processing apparatus according to an embodiment of the present invention.
[圖3]是圖2之一部分解立體圖。 FIG. 3 is a partially exploded perspective view of FIG. 2. FIG.
[圖4]是本發明一實施形態之批次式基板處理裝置的俯視截面。 Fig. 4 is a plan cross-sectional view of a batch type substrate processing apparatus according to an embodiment of the present invention.
[圖5(a)(b)]是本發明一實施形態之氣體供給部與氣體排出部的擴大立體圖。 5(a) and 5(b) are enlarged perspective views of a gas supply unit and a gas discharge unit according to an embodiment of the present invention.
[圖6(a)(b)]是顯示本發明一實施形態之已在上部面將補強肋部結合之批次式基板處理裝置的立體圖。 6(a) and 6(b) are perspective views showing a batch type substrate processing apparatus in which reinforcing ribs are joined to the upper surface according to an embodiment of the present invention.
[圖7(a)(b)]是顯示本發明一實施形態之加熱器設於外面之批次式基板處理裝置的立體圖。 [Fig. 7 (a) and (b)] is a perspective view showing a batch type substrate processing apparatus in which a heater according to an embodiment of the present invention is provided outside.
[圖8]是本發明一實施形態之加熱器的擴大正面圖。 Fig. 8 is an enlarged front elevational view showing a heater according to an embodiment of the present invention.
關於後述之本發明的詳細說明可參照以本發明所實施之特定實施形態為例所顯示的附加圖式。這些實施形態會充分地詳細說明而使該業者可實施本發明。本發明之多種實施形態雖彼此不同，但必須理解並不需要相互排斥。例如，在此所記載之特定的形狀、構造及特性會與一實施形態相關，在不脫離本發明之精神與範圍的範圍可用其他實施形態來實現。又，壁理解到各個所揭示之實施形態之個別構成要素的位置或配置在不脫離本發明之精神與範圍的範圍可變更。因此，後述之詳細說明並非理解為限定的意思，在適切地說明時，本發明之範圍只限定於與這些請求項所主張者相等之所有範圍一起附加的請求項。圖式中，類似之参照符號在橫跨各種側面時指示相同或類似的功能，亦會有長度與面積、厚度等與其之形態便宜行事之情形下，以誇張之方式來表現的情形。 For a detailed description of the present invention to be described later, reference may be made to the additional drawings shown in the specific embodiments of the present invention. These embodiments are described in sufficient detail to enable the practitioner to practice the invention. The various embodiments of the invention are different from each other, but it must be understood that they do not need to be mutually exclusive. For example, the specific shapes, structures, and characteristics described herein may be made in accordance with one embodiment, and may be implemented in other embodiments without departing from the spirit and scope of the invention. Further, the position or arrangement of the individual constituent elements of the respective embodiments disclosed may be changed without departing from the spirit and scope of the invention. Therefore, the detailed descriptions which follow are not to be construed as limiting, and the scope of the present invention is limited to the claims that are attached to all of the scopes of the claims. In the drawings, similar reference numerals indicate the same or similar functions when they are traversed on various sides, and may be expressed in an exaggerated manner in the case where the length, the area, the thickness, and the like are inexpensive.
本說明書中，可理解為所謂的基板是包含有半導體基板、使用於LED、LCD等之顯示裝置之基板、及太陽電池基板等的意思。 In the present specification, it is understood that the substrate is a substrate including a semiconductor substrate, a display device used for an LED or an LCD, and a solar cell substrate.
又，本說明書中，可理解到所謂的基板處理步驟是蒸鍍步驟，宜意味為使用了原子層蒸鍍法之蒸鍍步驟， 但並不限於此者，包含有使用了化學氣相蒸鍍法之蒸鍍步驟、熱處理步驟等之意思。但，以下，假設為使用了原子層蒸鍍法之蒸鍍步驟來說明。 Further, in the present specification, it is understood that the so-called substrate processing step is an evaporation step, and it is preferable to use an evaporation step using an atomic layer evaporation method. However, the present invention is not limited thereto, and includes a vapor deposition step using a chemical vapor deposition method, a heat treatment step, and the like. However, the following description is based on the vapor deposition step using the atomic layer vapor deposition method.
以下，參照附加之圖式，將本發明之實施形態之批次式裝置詳細地說明。 Hereinafter, the batch type apparatus according to the embodiment of the present invention will be described in detail with reference to the accompanying drawings.
圖2是顯示本發明一實施形態之批次式基板處理裝置的立體圖，圖3是圖2之一部分解立體圖，圖4是本發明一實施形態之批次式基板處理裝置的俯視截面，圖5是本發明一實施形態之氣體供給部200與氣體排出部300的擴大立體圖。 2 is a perspective view showing a batch type substrate processing apparatus according to an embodiment of the present invention, FIG. 3 is a partially exploded perspective view of FIG. 2, and FIG. 4 is a plan cross-sectional view of the batch type substrate processing apparatus according to an embodiment of the present invention, and FIG. An enlarged perspective view of the gas supply unit 200 and the gas discharge unit 300 according to an embodiment of the present invention.
如參照圖2至圖4，本實施形態之批次式基板處理裝置包含有基板處理部100、與氣體供給部200。 As shown in FIGS. 2 to 4, the batch type substrate processing apparatus of the present embodiment includes a substrate processing unit 100 and a gas supply unit 200.
基板處理部100之功能可說是工程管。基板處理部100將積層有複數片基板40之基板積載部500收容，並提供可進行蒸鍍膜形成步驟等之基板處理步驟的氣室空間110。 The function of the substrate processing unit 100 can be said to be an engineering pipe. The substrate processing unit 100 accommodates the substrate stacking unit 500 in which the plurality of substrates 40 are stacked, and provides a gas cell space 110 in which a substrate processing step such as a vapor deposition film forming step can be performed.
基板處理部100之材質可包含有石英(Quartz)、不銹鋼(SUS)、鋁(Aluminium)、石墨(Graphite)、碳化矽(Silicon carbide)、或氧化鋁(Aluminium oxide)當中之至少任1者。 The material of the substrate processing unit 100 may include at least one of quartz (Quartz), stainless steel (SUS), aluminum (Aluminium), graphite (Graphite), silicon carbide (Silicon carbide), or aluminum oxide (Aluminium oxide).
氣體供給部200可提供收容有至少1個氣體供給流路250之空間210，並形成為使其突出於基板處理部100其中一側外周面上，且可對基板處理部100之內部空間110供給基板處理氣體。在此，氣體供給流路250是從外部接受基板處理氣體並可對基板處理部100之內部供給的通路，可具 有管、中孔等之形態，特別是為了仔細控制基板處理氣體的供給量，宜由管來構成。以下，假設3條氣體供給管251構成氣體供給流路250之情形來說明。 The gas supply unit 200 can provide a space 210 in which at least one gas supply flow path 250 is accommodated, and is formed so as to protrude from one outer peripheral surface of the substrate processing unit 100, and can supply the internal space 110 of the substrate processing unit 100. The substrate treats the gas. Here, the gas supply flow path 250 is a passage that receives the substrate processing gas from the outside and can supply the inside of the substrate processing unit 100, and can have In the form of a tube, a medium hole, or the like, in particular, in order to carefully control the supply amount of the substrate processing gas, it is preferable to be constituted by a tube. Hereinafter, a case where three gas supply pipes 251 constitute the gas supply flow path 250 will be described.
另一方面，氣體排出部300可提供將至少1個氣體排出流路350收容之空間310，並形成為使其突出於基板處理部100另一側外周面上[即，氣體供給部200之相反側]，便可排出朝基板處理部100內部空間110流入的基板處理氣體。在此，氣體排出流路350是基板處理部100內部之基板處理氣體可朝外部排出的通路，可具有管、中孔等之形態，特別是為了圓滑地排出基板處理氣體，宜由比氣體供給管251直徑更大之管來構成。另一方面，在不具備氣體排出管351之情形下，以中孔形態來構成氣體排出流路350，將幫浦與氣體排出流路350連結，便可使基板處理氣體泵取而排出。以下，假設1個氣體排出管351構成氣體排出流路350之情形來說明。 On the other hand, the gas discharge unit 300 can provide a space 310 in which at least one gas discharge flow path 350 is housed, and is formed so as to protrude from the outer peripheral surface of the other side of the substrate processing unit 100 [that is, the opposite side of the gas supply unit 200) On the side, the substrate processing gas flowing into the internal space 110 of the substrate processing unit 100 can be discharged. Here, the gas discharge flow path 350 is a passage through which the substrate processing gas inside the substrate processing unit 100 can be discharged to the outside, and may have a form such as a tube or a mesopores, and particularly, in order to smoothly discharge the substrate processing gas, it is preferable to use a specific gas supply tube. 251 is made up of a larger diameter tube. On the other hand, when the gas discharge pipe 351 is not provided, the gas discharge flow path 350 is formed in the form of a mesopores, and the pump is connected to the gas discharge flow path 350, so that the substrate process gas can be pumped and discharged. Hereinafter, a case where one gas discharge pipe 351 constitutes the gas discharge flow path 350 will be described.
基板處理部100之外周面可與氣體供給部200之外周面連結成一體。又，基板處理部100之外周面可與氣體排出部300之外周面連結成一體。考慮於此，氣體供給部200與氣體排出部300之材質宜與基板處理部100相同。在將基板處理部100、氣體供給部200及氣體排出部300分別以不同方式製造之後，利用將這些使用溶接方式等來結合的方法而可連結基板處理部100、氣體供給部200及氣體排出部300之諸外周面。又，亦可在事前製造具有預定之厚度的基板處理部100之後，利用將除去朝基板處理部100之外周面上 其中一側與另一側突出之部分的剩餘部位加以切削加工，而在基板處理部100將氣體供給部200與氣體排出部300形成為一體的方法。 The outer peripheral surface of the substrate processing unit 100 can be integrally connected to the outer peripheral surface of the gas supply unit 200. Moreover, the outer peripheral surface of the substrate processing unit 100 can be integrally connected to the outer peripheral surface of the gas discharge unit 300. In consideration of this, the material of the gas supply unit 200 and the gas discharge unit 300 is preferably the same as that of the substrate processing unit 100. After the substrate processing unit 100, the gas supply unit 200, and the gas discharge unit 300 are manufactured in different manners, the substrate processing unit 100, the gas supply unit 200, and the gas discharge unit can be connected by a method in which these methods are used by bonding or the like. 300 outer faces. Further, after the substrate processing unit 100 having a predetermined thickness is manufactured in advance, it may be removed to the outer peripheral surface of the substrate processing unit 100. The remaining portion of the portion where the one side and the other side are protruded is cut, and the gas supply unit 200 and the gas discharge unit 300 are integrally formed in the substrate processing unit 100.
本實施形態之批次式基板處理裝置更可包含有：殼體(Housing)400、與基板積載部500。殼體400中下面會開放，並形成為其中一側突出之圓筒狀而使其可具有包圍基板處理部100與氣體供給部200之形態，殼體400之表面側可支持設置於如無塵室等之工程室(未圖示)之表面。如參照圖4，殼體400為了發揮製造基板處理部100與氣體供給部200之熱環境之斷熱體的角色，可為其中一側與另一側突出之容積(bulk)形態、或由朝垂直方向其中一側與另一側突出之圓形環形態之單位體410構成而使其包圍基板處理部100與氣體供給部200之外周，殼體400之最外廓面420可用SUS、鋁等來完成。又，殼體400之內側面可設置折曲部(以「∪」或「∩」形狀作為一例)連續地連結而形成的加熱器430。 The batch type substrate processing apparatus of the present embodiment may further include a housing 400 and a substrate stacking unit 500. The lower surface of the casing 400 is opened and formed into a cylindrical shape in which one side protrudes so as to have a shape surrounding the substrate processing portion 100 and the gas supply portion 200, and the surface side of the casing 400 can be supported to be disposed such as dust-free. The surface of a laboratory (not shown) such as a room. As shown in FIG. 4, in order to exert the role of the heat insulator for manufacturing the thermal environment of the substrate processing unit 100 and the gas supply unit 200, the housing 400 may be in the form of a bulk in which one side and the other side protrude, or The unit body 410 in the form of a circular ring in which one side and the other side protrude in the vertical direction is configured to surround the outer periphery of the substrate processing unit 100 and the gas supply unit 200, and the outermost surface 420 of the casing 400 may be made of SUS, aluminum, or the like. To be done. Further, the inner side surface of the casing 400 may be provided with a bent portion (a "∪" or "∩" shape as an example) of the heater 430 which is continuously connected.
基板積載部500設有公認之昇降系統(未圖示)而可昇降可能，並包含有主台座部510、補助台座部520、基板支持部530。 The substrate stacking unit 500 is provided with a recognized lifting system (not shown) and can be moved up and down, and includes a main pedestal portion 510, a sub-seat portion 520, and a substrate supporting portion 530.
主台座部510形成為大致圓筒狀，可載置於前述工程室之底部等，表面可與結合於殼體400之下端部側的歧管(Manifold)450密閉結合。 The main pedestal portion 510 is formed in a substantially cylindrical shape and can be placed on the bottom of the engineering chamber or the like, and the surface can be hermetically coupled to a manifold (Manifold) 450 coupled to the lower end side of the casing 400.
補助台座部520形成為大致圓筒狀，並設於主台座部510之表面，用比基板處理部100之內徑更小之直徑來 形成，且朝基板處理部100之內部空間110***。補助台座部520為了確保半導體製造步驟之均一性，載基板處理步驟中可設置成與馬達(未圖示)而使連動基板40可旋轉。又，、為了確保步驟之可信度，補助台座部520之內部在基板處理步驟中可設有用以從基板40下側施加熱的補助加熱器(未圖示)。積載保持於基板積載部500的基板40可利用前述補助加熱器在基板處理步驟前預先預熱。 The auxiliary pedestal portion 520 is formed in a substantially cylindrical shape and is provided on the surface of the main pedestal portion 510 and has a diameter smaller than the inner diameter of the substrate processing portion 100. It is formed and inserted into the internal space 110 of the substrate processing unit 100. In order to ensure the uniformity of the semiconductor manufacturing process, the submount 520 can be provided in a carrier substrate processing step so as to be rotatable with a motor (not shown). Further, in order to secure the reliability of the step, the auxiliary pedestal portion 520 may be provided with a supplementary heater (not shown) for applying heat from the lower side of the substrate 40 in the substrate processing step. The substrate 40 held by the substrate stacking unit 500 can be preheated in advance by the auxiliary heater before the substrate processing step.
基板支持部530會沿著補助台座部520之緣部側，彼此具有間隔地設置複數個。朝向補助台座部520之中心側之基板支持部530的內面分別形成有複數條支持溝而使彼此對應。支持溝***支持有基板40之緣部側，藉此，複數之基板40可以朝上下積層之形態積載保持於基板積載部500。 The substrate supporting portion 530 is provided at a plurality of intervals along the edge portion side of the auxiliary pedestal portion 520. A plurality of support grooves are formed on the inner surface of the substrate supporting portion 530 on the center side of the auxiliary pedestal portion 520 so as to correspond to each other. The support groove is inserted into the edge portion side of the substrate 40, whereby the plurality of substrates 40 can be stacked and held on the substrate stacking portion 500 in the form of the upper and lower layers.
基板積載部500昇降，並且可與在基板處理部100下端面與氣體供給部200下端面結合了上端面的歧管450下端面結合成可裝脫。從構成氣體供給部200之氣體供給流路250之氣體供給管251延伸的氣體供給連結管253朝歧管450之氣體供給連通孔451***並連通，又從構成氣體排出部300之氣體排出流路350之氣體排出管351延伸之氣體排出連結管353朝歧管450之氣體排出連通孔455***並連通。又，當基板積載部500上昇，基板積載部500之主台座部510之表面與歧管450之下端面側結合時，基板40便裝載於基板處理部100之內部空間110，基板處理部100便可密閉。為了安定之升限，在歧管450與基板積載部500之主台座部510之 間，升限構件(未圖示)可介有存在。 The substrate stacking portion 500 is lifted and lowered, and can be detachably coupled to the lower end surface of the manifold 450 in which the lower end surface of the substrate processing portion 100 and the lower end surface of the gas supply portion 200 are coupled to the upper end surface. The gas supply connection pipe 253 extending from the gas supply pipe 251 of the gas supply flow path 250 constituting the gas supply unit 200 is inserted into and communicated with the gas supply communication hole 451 of the manifold 450, and is further connected to the gas discharge flow path constituting the gas discharge unit 300. The gas discharge connection pipe 353 extending from the gas discharge pipe 351 of 350 is inserted into and communicated with the gas discharge communication hole 455 of the manifold 450. When the substrate stacking portion 500 is raised and the surface of the main pedestal portion 510 of the substrate stacking portion 500 is joined to the lower end surface side of the manifold 450, the substrate 40 is placed in the internal space 110 of the substrate processing portion 100, and the substrate processing portion 100 is placed. Can be sealed. In order to stabilize the ceiling, the manifold 450 and the main pedestal portion 510 of the substrate stowage portion 500 are In between, the lifting member (not shown) may exist.
如參照圖3與圖4，基板處理部100與殼體400成為同心而配置於殼體400內部，殼體400以包圍連結成一體之基板處理部100、氣體供給部200及氣體排出部300的形態來設置。 3 and 4, the substrate processing unit 100 is disposed inside the casing 400 concentrically with the casing 400, and the casing 400 surrounds the substrate processing unit 100, the gas supply unit 200, and the gas discharge unit 300 that are integrally connected. Form to set.
在氣體供給部200之內部空間210可收容氣體供給流路250。如參照圖4與圖5(a)，氣體供給流路250包含有沿著氣體供給部200之長度方向來形成之複數個氣體供給管251、與朝向基板處理部100形成於氣體供給管251其中一側的複數個吐出孔252。吐出孔252會分別形成複數個於個別之氣體供給管251。且，從氣體供給管251連通之氣體供給連結管253會朝形成於歧管450之氣體供給連通孔451***並連通。 The gas supply flow path 250 can be accommodated in the internal space 210 of the gas supply unit 200. As shown in FIG. 4 and FIG. 5(a), the gas supply flow path 250 includes a plurality of gas supply pipes 251 formed along the longitudinal direction of the gas supply unit 200, and a gas supply pipe 251 formed in the facing substrate processing unit 100. A plurality of discharge holes 252 on one side. The discharge holes 252 form a plurality of individual gas supply pipes 251, respectively. Further, the gas supply connection pipe 253 that is connected from the gas supply pipe 251 is inserted into and communicated with the gas supply communication hole 451 formed in the manifold 450.
在氣體排出部300之內部空間310可收容氣體排出流路350。如參照圖4與圖5(b)，氣體排出流路350包含有沿著氣體排出部300之長度方向來形成之氣體排出管351、與朝向基板處理部100形成於氣體排出管351其中一側的複數個排出孔352。排出孔352會形成複數個於氣體排出管351。且，從氣體排出管351連通之氣體排出連結管353會朝形成於歧管450之氣體排出連通孔455***並連通。 The gas discharge flow path 350 can be accommodated in the internal space 310 of the gas discharge unit 300. As shown in FIG. 4 and FIG. 5(b), the gas discharge flow path 350 includes a gas discharge pipe 351 formed along the longitudinal direction of the gas discharge portion 300, and a side of the gas discharge pipe 351 formed toward the substrate processing portion 100. A plurality of discharge holes 352. The discharge holes 352 are formed in plural numbers in the gas discharge pipe 351. Further, the gas discharge connecting pipe 353 that is connected from the gas discharge pipe 351 is inserted into and communicated with the gas discharge communication hole 455 formed in the manifold 450.
在基板積載部500與歧管450結合並且複數片基板40收容於基板處理部100時，吐出孔252與排出孔352將基板處理氣體朝基板40均勻地供給，並宜個別地位於支持於基板支持部530且彼此鄰接之基板40與基板40之間的間隔 而使其可容易吸入基板處理氣體並朝外部排出。 When the substrate stacking unit 500 is coupled to the manifold 450 and the plurality of substrates 40 are housed in the substrate processing unit 100, the discharge holes 252 and the discharge holes 352 uniformly supply the substrate processing gas toward the substrate 40, and are preferably individually supported on the substrate support. The spacing between the portion 530 and the substrate 40 adjacent to each other and the substrate 40 It makes it easy to suck in the substrate processing gas and discharge it to the outside.
氣體供給部200與氣體排出部300由於從基板處理部100外周面突出而形成，因此比起基板40與基板處理部100之內周面之間的距離d1，基板40與氣體供給流路250之間的距離d2可為相同或更大。即，在圖1所示之進行基板處理步驟之工程管10的氣室11配置氣體供給部20或氣體排出部30，跟具有基板40與工程管10之內周面之間的距離d1’比基板40與氣體供給部20之間的距離d2’更大之值(d1’>d2’)的習知技術不同，本發明會使d1≦d2之條件滿足，由於在基板處理部100之外部配置氣體供給部200或氣體排出部300，便可使基板處理部100之內部空間110的大小減少到可收容基板積載部500的最小大小[或可收容基板40之最小大小]。因此，不只是有因減少進行基板處理步驟之基板處理部100之內部空間110的大小而基板處理氣體之使用量的節約與伴隨此之基板處理步驟費用節約的優點，亦會有基板處理氣體之供給時間與排出時間的減少與伴隨此之基板處理步驟的生產性提升的優點。 Since the gas supply unit 200 and the gas discharge unit 300 are formed to protrude from the outer peripheral surface of the substrate processing unit 100, the substrate 40 and the gas supply flow path 250 are larger than the distance d1 between the substrate 40 and the inner peripheral surface of the substrate processing unit 100. The distance d2 between them may be the same or larger. That is, the gas supply unit 20 or the gas discharge unit 30 is disposed in the gas chamber 11 of the engineering pipe 10 which performs the substrate processing step shown in FIG. 1, and has a distance d1' ratio from the inner peripheral surface of the substrate 40 and the engineering pipe 10. Unlike the conventional technique in which the distance d2' between the substrate 40 and the gas supply portion 20 is larger (d1'>d2'), the present invention satisfies the condition of d1≦d2, which is disposed outside the substrate processing unit 100. The gas supply unit 200 or the gas discharge unit 300 can reduce the size of the internal space 110 of the substrate processing unit 100 to the minimum size (or the minimum size at which the substrate 40 can be accommodated) in which the substrate stacking unit 500 can be accommodated. Therefore, there is not only the advantage of reducing the amount of use of the substrate processing gas due to the reduction of the size of the internal space 110 of the substrate processing unit 100 for performing the substrate processing step, but also the cost of the substrate processing step, and the substrate processing gas. The reduction in supply time and discharge time is accompanied by the advantage of the productivity improvement of the substrate processing step.
圖6是顯示本發明一實施形態之已在上部面將補強肋部120、130結合之批次式基板處理裝置的立體圖。 Fig. 6 is a perspective view showing a batch type substrate processing apparatus in which reinforcing ribs 120 and 130 are joined to an upper surface according to an embodiment of the present invention.
與習知之批次式基板處理裝置的工程管10為直立型不同，本發明之基板處理部100具有圓柱形狀，表面可為平坦。基板處理部100表面構造成平坦，基板40將無法收容之直立型氣室11之上部空間12(參照圖1)排除，藉此會有使基板處理部100之內部空間110的大小更加減少的優點。 但，與習知之直立型氣室11相比，為了解除無法使內部之壓力均等地分散而可能產生之耐久性的問題，本發明之批次式基板處理裝置之特徵在於在基板處理部100之表面上將複數個補強肋部120、130加以結合。 Unlike the conventional tube 10 of the conventional batch type substrate processing apparatus, the substrate processing unit 100 of the present invention has a cylindrical shape and the surface can be flat. The surface of the substrate processing unit 100 is flat, and the substrate 40 excludes the upper space 12 (see FIG. 1) of the upright air chamber 11 that cannot be accommodated, whereby the size of the internal space 110 of the substrate processing unit 100 is further reduced. . However, the batch type substrate processing apparatus of the present invention is characterized in that it is in the substrate processing part 100 in order to solve the problem that the internal pressure cannot be uniformly dispersed in comparison with the conventional upright type air chamber 11. A plurality of reinforcing ribs 120, 130 are combined on the surface.
補強肋部120、130之材質可採用與基板處理部100之材質相同，但不限於此，在可支持基板處理部100之表面之目的的範圍內，可採用多種材質。 The material of the reinforcing ribs 120 and 130 may be the same as the material of the substrate processing unit 100. However, the material is not limited thereto, and various materials may be used within the range of the purpose of supporting the surface of the substrate processing unit 100.
如圖6(a)所示，補強肋部120、130可配置成使複數個補強肋部121、122交差並與基板處理部100之表面結合，如圖6(b)所示，亦可將複數個補強肋部131、132平行地配置並與基板處理部100之表面結合。補強肋部120、130可使用溶接方式等來與基板處理部100之表面結合。 As shown in FIG. 6( a ), the reinforcing ribs 120 and 130 may be disposed such that the plurality of reinforcing ribs 121 and 122 intersect and are combined with the surface of the substrate processing unit 100 , as shown in FIG. 6( b ). The plurality of reinforcing ribs 131 and 132 are arranged in parallel and joined to the surface of the substrate processing unit 100. The reinforcing ribs 120 and 130 can be bonded to the surface of the substrate processing unit 100 by a bonding method or the like.
圖7是顯示本發明一實施形態之加熱器150、160設於外面之批次式基板處理裝置的立體圖。 Fig. 7 is a perspective view showing a batch type substrate processing apparatus in which heaters 150 and 160 according to an embodiment of the present invention are provided outside.
如參照圖7，如圖3所示，殼體400之內側面設有加熱器430，或殼體400之內側面不設有加熱器430之情形下，在基板處理部100之表面與外周面設有用以將基板40加熱的加熱器150、160。雖未圖示，視需要亦可在氣體供給部200與氣體排出部300之表面與外周面設置加熱器。 As shown in FIG. 7, as shown in FIG. 3, the inner surface of the casing 400 is provided with a heater 430, or the inner surface of the casing 400 is not provided with the heater 430, and the surface and the outer peripheral surface of the substrate processing portion 100 are provided. Heaters 150, 160 for heating the substrate 40 are provided. Although not shown, a heater may be provided on the surface and the outer peripheral surface of the gas supply unit 200 and the gas discharge unit 300 as needed.
加熱器150、160形持為板狀，在基板處理部100之內部空間110可有效率地進行熱傳達，並可用從石墨(Graphite)或碳(Carbon)複合體之中所選擇之任1者來形成。或是，加熱器150、160可用碳化矽(Silicon carbide)或鉬之中所選擇之任1者來形成，或可用坎氏合金(Kanthal)來 形成。 The heaters 150 and 160 are formed in a plate shape, and heat can be efficiently transmitted in the internal space 110 of the substrate processing unit 100, and can be selected from any of graphite (Graphite) or carbon (Carbon) composites. To form. Alternatively, the heaters 150, 160 may be formed of any one of silicon carbide or molybdenum, or may be made of Kanthal. form.
加熱器150設於基板處理部100之表面，且形成為「□」形狀與「□」形狀依序連續地重複的形狀。此時，加熱器150在由形成於基板處理部100之表面之補強肋部120、130劃分之基板處理部100之表面，個別地來設置。 The heater 150 is provided on the surface of the substrate processing unit 100, and is formed in a shape in which the "□" shape and the "□" shape are continuously and continuously repeated. At this time, the heater 150 is individually provided on the surface of the substrate processing unit 100 which is defined by the reinforcing ribs 120 and 130 formed on the surface of the substrate processing unit 100.
加熱器160設於基板處理部100之外周面，分別配置於下側與上側，包含有相對向而成對之第1加熱器161與第2加熱器165。且，成對之第1加熱器161與第2加熱器165沿著基板處理部100之圓周方向以預定間隔來設置複數個。 The heaters 160 are provided on the outer peripheral surface of the substrate processing unit 100, and are disposed on the lower side and the upper side, respectively, and include the first heater 161 and the second heater 165 that are opposed to each other. Further, the pair of first heaters 161 and second heaters 165 are provided in plural at predetermined intervals along the circumferential direction of the substrate processing unit 100.
圖8是本發明一實施形態之加熱器160的擴大正面圖。 Fig. 8 is an enlarged front elevational view showing a heater 160 according to an embodiment of the present invention.
第1加熱器161具有：一對第1左側垂直板161a、一對第1右側垂直板161b、一對第1中央垂直板161c、一對第1上側連結板161d、一對第1下側連結板161e、及第1中央連結板161f。 The first heater 161 has a pair of first left vertical plates 161a, a pair of first right vertical plates 161b, a pair of first central vertical plates 161c, a pair of first upper connecting plates 161d, and a pair of first lower connecting sides. The plate 161e and the first center connecting plate 161f.
第1左側垂直板161a為從第1加熱器161之左側彼此隔離預定距離而相對向的一對，並朝向基板處理部100之上下方向。第1右側垂直板161b為從第1加熱器161之右側彼此隔離預定距離離隔而相對向的一對，並朝向基板處理部100之上下方向，具有與第1左側垂直板161a相同之長度。第1中央垂直板161c為從第1加熱器161之中央彼此隔離預定距離而相對向的一對，並朝向基板處理部100之上下方向，形成為比第1左側垂直板161a與第1右側垂直板161b更短，且配置於第1左側垂直板161a與第1右側垂直板161b之 間。 The first left vertical plate 161a is a pair that faces away from each other by a predetermined distance from the left side of the first heater 161, and faces the upper and lower sides of the substrate processing unit 100. The first right vertical plate 161b is a pair that is opposed to each other with a predetermined distance apart from the right side of the first heater 161, and has the same length as the first left vertical plate 161a toward the upper and lower sides of the substrate processing unit 100. The first central vertical plate 161c is opposed to each other by a predetermined distance from the center of the first heater 161, and is formed to be vertically higher than the first left vertical plate 161a and the first right side toward the substrate processing unit 100 in the vertical direction. The plate 161b is shorter and disposed on the first left vertical plate 161a and the first right vertical plate 161b. between.
第1上側連結板161d將一對第1左側垂直板161a上側部分與一對第1右側垂直板161b上側部分分別連結。第1下側連結板161e將與一對第1中央垂直板161c彼此鄰接之第1左側垂直板161a以及第1右側垂直板161b之下側部分分別連結。第1中央連結板161f將一對之第1中央垂直板161c之上側部分連結。 The first upper side connecting plate 161d connects the upper side portions of the pair of first left vertical plates 161a and the upper side portions of the pair of first right vertical plates 161b, respectively. The first lower side connecting plate 161e is connected to each of the first left vertical plate 161a and the lower side of the first right vertical plate 161b which are adjacent to each other with the pair of first central vertical plates 161c. The first center connecting plate 161f connects the upper side portions of the pair of first central vertical plates 161c.
第2加熱器165具有：一對第2左側垂直板165a、一對第2右側垂直板165b、一對第2中央垂直板165c、一對第2中央連結板165d、一對第2上側連結板165e、及第2下側連結板165f。 The second heater 165 includes a pair of second left vertical plates 165a, a pair of second right vertical plates 165b, a pair of second central vertical plates 165c, a pair of second center connecting plates 165d, and a pair of second upper connecting plates. 165e and the second lower side connecting plate 165f.
第2左側垂直板165a為從第2加熱器165之左側彼此隔離預定距離而相對向的一對，並朝向基板處理部100之上下方向。第2右側垂直板165b為從第2加熱器165之右側彼此隔離預定距離而相對向的一對，並朝向基板處理部100之上下方向，具有與第2左側垂直板165a相同長度。第2中央垂直板165c為從第2加熱器165之中央彼此隔離預定距離而相對向的一對，並朝向基板處理部100之上下方向，形成為比第2左側垂直板165a與第2右側垂直板165b更長，且配置於第2左側垂直板165a與第2右側垂直板165b之間。 The second left vertical plate 165a is a pair that is opposed to each other by a predetermined distance from the left side of the second heater 165, and faces the upper and lower sides of the substrate processing unit 100. The second right vertical plate 165b is a pair that is opposed to each other by a predetermined distance from the right side of the second heater 165, and has the same length as the second left vertical plate 165a toward the upper and lower sides of the substrate processing unit 100. The second center vertical plate 165c is a pair opposed to each other with a predetermined distance from the center of the second heater 165, and is formed to be perpendicular to the second left vertical plate 165a and the second right side toward the substrate processing unit 100 in the vertical direction. The plate 165b is longer and disposed between the second left vertical plate 165a and the second right vertical plate 165b.
第2中央連結板165d將一對第2左側垂直板165a下側部分與一對第2右側垂直板165b下側部分分別連結。第2上側連結板165e將與一對第2中央垂直板165c彼此鄰接之第2左側垂直板165a與第2右側垂直板165b之上側部分分別 連結。第2下側連結板165f將一對第2中央垂直板165c之下側部分連結。 The second center connecting plate 165d connects the lower portion of the pair of second left vertical plates 165a and the lower portion of the pair of second right vertical plates 165b, respectively. The second upper side connecting plate 165e separates the second left vertical plate 165a and the upper side of the second right vertical plate 165b adjacent to the pair of second central vertical plates 165c, respectively. link. The second lower side connecting plate 165f connects the lower side portions of the pair of second central vertical plates 165c.
此時，第1上側連結板161d之表面與第2中央連結板165d之下面彼此相對向，第2下側連結板165f之下面與第1中央連結板161f之表面彼此相對向，並且第2下側連結板165f位於第1左側垂直板161a與第1右側垂直板161b之間。 At this time, the surface of the first upper connecting plate 161d and the lower surface of the second central connecting plate 165d face each other, and the lower surface of the second lower connecting plate 165f and the surface of the first central connecting plate 161f face each other, and the second lower portion The side coupling plate 165f is located between the first left vertical plate 161a and the first right vertical plate 161b.
如前述之加熱器160中，由於加熱器端子為第1左側垂直板161a之下端部、第1右側垂直板161b之下端部、第2左側垂直板165a之上端部、及第2右側垂直板165b之上端部所具備[即，在加熱器160之4個角側具備加熱器端子]，因此會有將外部電源與加熱器端子容易連結之優點。 In the heater 160 described above, the heater terminal is the lower end portion of the first left vertical plate 161a, the lower end portion of the first right vertical plate 161b, the upper end portion of the second left vertical plate 165a, and the second right vertical plate 165b. Since the upper end portion is provided [that is, the heater terminal is provided on the four corner sides of the heater 160], there is an advantage that the external power source and the heater terminal are easily connected.
又，當將基板處理部100之內部加熱時，利用對流現象基板處理部100之內部空間110之上側部位就會比下側部位變得更高溫。但，由於加熱器160準備作為彼此劃分之第1加熱器161與第2加熱器165且朝上下來配置，因此當將第1加熱器161與第2加熱器165適切地控制時，便可控制而使基板處理部100之內部空間110的上下側之溫度為均一。 Further, when the inside of the substrate processing unit 100 is heated, the upper portion of the internal space 110 of the convection phenomenon substrate processing unit 100 becomes higher than the lower portion. However, since the heater 160 is prepared as the first heater 161 and the second heater 165 which are divided from each other and arranged upward, the first heater 161 and the second heater 165 can be controlled when the first heater 161 and the second heater 165 are appropriately controlled. Further, the temperature of the upper and lower sides of the internal space 110 of the substrate processing unit 100 is uniform.
進而，將沿著基板處理部100之高度方向的3個區域[從第2加熱器165之上端到第2中央連結板165d為止的區域、從第1上側連結板161d到第2下側連結板165f為止的區域、從第1中央連結板161f到第1加熱器161之下端為止的區域]利用彼此劃分之2個加熱器161、165而可加熱，故，與用2個加熱器控制2個區域之方式相比，在溫度控制之效率 性與均一性的面較為有利。 Further, three regions along the height direction of the substrate processing unit 100 [the region from the upper end of the second heater 165 to the second central connecting plate 165d] and the first upper connecting plate 161d to the second lower connecting plate are provided. The area from 165f to the lower end of the first heater 161f to the lower end of the first heater 161 is heated by the two heaters 161 and 165 divided from each other. Therefore, two heaters are used to control two. Compared to the way the area is in the efficiency of temperature control The face of sex and homogeneity is more favorable.
如上所述，本發明將收容氣體供給流路250與氣體排出流路350的氣體供給部200以及氣體排出部300與進行基板處理步驟之基板處理部100分離地來配置，藉此便可使基板處理部100之內部空間110之大小最小化，故，藉由節約基板處理氣體之使用量來節約步驟費用，並藉由使基板處理氣體之供給與排出時間縮短，便可使基板處理步驟之生產性提升。 As described above, according to the present invention, the gas supply unit 200 and the gas discharge unit 300 that house the gas supply flow path 250 and the gas discharge flow path 350 are disposed separately from the substrate processing unit 100 that performs the substrate processing step, whereby the substrate can be made. The size of the internal space 110 of the processing unit 100 is minimized, so that the step cost can be saved by saving the amount of use of the substrate processing gas, and the substrate processing step can be produced by shortening the supply and discharge time of the substrate processing gas. Sexual improvement.
且，藉由使基板處理部100之上部形成為平坦，使基板處理部100之內部空間110之大小更加減少便可使前述效果極大化，因將補強肋部120、130與基板處理部100之表面結合便可使耐久性強化。 Further, by forming the upper portion of the substrate processing unit 100 to be flat, the size of the internal space 110 of the substrate processing unit 100 can be further reduced, and the above-described effects can be maximized, by reinforcing the ribs 120 and 130 and the substrate processing unit 100. Surface bonding enhances durability.
且，加熱器150、160形成為板狀，並設於基板處理部100之外面，故，便可在基板處理部100之內部空間110有效率地進行熱傳達，因在角測具備加熱器160之端子，便可容易與外部電源連結，用2個加熱器161、162便可均一地溫度控制3個區域。 Further, since the heaters 150 and 160 are formed in a plate shape and provided on the outer surface of the substrate processing unit 100, heat can be efficiently transmitted in the internal space 110 of the substrate processing unit 100, and the heater 160 is provided at the angle measurement. The terminals can be easily connected to an external power source, and the two heaters 161 and 162 can uniformly control three areas with temperature.
本發明如上所述已舉出適宜之實施形態來圖示與說明，但不限於上述之實施形態，在不脫離本發明之精神之範圍內，根據具有該當發明所屬之技術領域之常識而可有多種變形與變更。如此之變形例與變更例會屬於本發明與附加之專利請求之範圍的範圍內。 The present invention has been described and illustrated in the above-described embodiments, but is not limited to the embodiments described above, and may be based on the common knowledge of the technical field to which the invention pertains, without departing from the spirit of the invention. A variety of variations and changes. Such modifications and variations are within the scope of the invention and the scope of the appended claims.
100‧‧‧基板處理部 100‧‧‧Substrate Processing Department
110‧‧‧基板處理部之內部空間 110‧‧‧Internal space of the substrate processing department
200‧‧‧氣體供給部 200‧‧‧Gas Supply Department
300‧‧‧氣體排出部 300‧‧‧ gas discharge department
400‧‧‧殼體 400‧‧‧shell
450‧‧‧歧管 450‧‧‧Management
500‧‧‧基板積載部 500‧‧‧Substrate stowage department
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| JP6578243B2 (en) * | 2015-07-17 | 2019-09-18 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Gas supply nozzle, substrate processing apparatus, semiconductor device manufacturing method and program |
| KR101826814B1 (en) * | 2015-09-23 | 2018-02-08 | 주식회사 테라세미콘 | Reactor of apparatus for processing substrate |
| KR101744201B1 (en) * | 2015-12-28 | 2017-06-12 | 주식회사 유진테크 | Apparatus for processing substrate |
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| JP2014165500A (en) | 2014-09-08 |
| CN104005005A (en) | 2014-08-27 |
| KR101396601B1 (en) | 2014-05-20 |
| TWI602937B (en) | 2017-10-21 |
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