TW201430996A - Mechanical clamping assembly for a ring-shaped component within a vacuum chamber for substrate processing - Google Patents
Mechanical clamping assembly for a ring-shaped component within a vacuum chamber for substrate processing Download PDFInfo
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- TW201430996A TW201430996A TW102140511A TW102140511A TW201430996A TW 201430996 A TW201430996 A TW 201430996A TW 102140511 A TW102140511 A TW 102140511A TW 102140511 A TW102140511 A TW 102140511A TW 201430996 A TW201430996 A TW 201430996A
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- ring
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- substrate
- clamp device
- mechanical clamp
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Abstract
Description
本發明係有關於一種用以將如一基板環之一環形組件與配置在例如用於半導體晶圓加工之一腔室之一真空或減壓腔室內的一安裝裝置固結在一起，同時保持達成冷卻目的之最佳導熱性的機械設備。 The present invention relates to a method for consolidating a ring assembly such as a substrate ring with a mounting device disposed in a vacuum or decompression chamber, such as one of the chambers for semiconductor wafer processing, while maintaining Mechanical equipment for optimal thermal conductivity for cooling purposes.
在一用於半導體製造程序之電漿加工裝置中，有提供一基板安裝裝置之一加工腔室，且例如一晶圓之一基板安裝在該基板安裝裝置上。接著在真空下施加一高頻電壓至該加工腔室以產生用於在該基板上實施之一蝕刻程序的一電漿。在這種電漿加工裝置中，在該安裝台上使用一基板環以固持實施該程序之該基板之一外周緣以便加強施加在該基板之一平面上之電漿的均勻性係習知的。 In a plasma processing apparatus for a semiconductor manufacturing process, there is provided a processing chamber for a substrate mounting device, and for example, a substrate of a wafer is mounted on the substrate mounting device. A high frequency voltage is then applied to the processing chamber under vacuum to create a plasma for performing an etching process on the substrate. In such a plasma processing apparatus, a substrate ring is used on the mounting table to hold the outer periphery of one of the substrates on which the procedure is performed to enhance the uniformity of the plasma applied to one of the planes of the substrate. .
用以一電漿加工裝置之一基板環係暴露於電漿使得該基板環本身會被蝕刻且接著被腐蝕。由於一基板之 腐蝕破壞在該程序中使用之電漿在該半導體晶圓平面上的均勻性，故當該環之腐蝕已進行至某種程度時必須以一新基板環更換一被腐蝕基板環。 A substrate ring system for use in a plasma processing apparatus is exposed to the plasma such that the substrate ring itself is etched and then etched. Due to a substrate Corrosion destroys the uniformity of the plasma used in the process on the plane of the semiconductor wafer, so that when the corrosion of the ring has progressed to some extent, a etched substrate ring must be replaced with a new substrate ring.
一可能問題係在一預防保養(PM)周期之各安裝後，該晶圓夾頭及例如該基板環之組件等不會一致地互相對齊。由於該可更換組件係手動地安裝(以手動、目視最適安裝為主)，故適當地安裝及對齊該組件在該晶圓夾頭上亦更困難。該錯位將在該夾頭與該可更換組件之間產生一不一致間隙間隔，這會因該加工電漿造成電弧放電且對該晶圓夾頭之破壞。在嚴苛之情形下，該破壞會在該晶圓上產生顆粒且必須花錢更換一新晶圓夾頭。 One possible problem is that after each installation of a preventive maintenance (PM) cycle, the wafer chuck and components such as the substrate ring are not uniformly aligned with one another. Since the replaceable component is manually mounted (mainly by manual and visually optimal mounting), proper assembly and alignment of the component is also more difficult on the wafer chuck. This misalignment creates an inconsistent gap between the collet and the replaceable component, which can cause arcing of the process plasma and damage to the wafer chuck. In severe cases, the damage can create particles on the wafer and must cost money to replace a new wafer chuck.
大部份半導體晶圓處理腔室需要高射頻功率，且在該晶圓及周圍組件上產生高溫。因此，該晶圓通常藉由一晶圓夾頭支持，且該晶圓夾頭係設計成具有使熱可在處理時透過一氦氣背面由該熱晶圓傳送至一冷夾頭的一精巧冷卻系統。支持該晶圓夾頭，有例如一基板環之上述環形組件(例如，一聚焦環、邊緣環、遮蔽環或沈積環)，且該環形組件準確地嵌合在該晶圓夾頭上，但是具有可讓它在預防保養(PM)周期中輕易移除及更換之間隙。 Most semiconductor wafer processing chambers require high RF power and generate high temperatures on the wafer and surrounding components. Therefore, the wafer is usually supported by a wafer chuck, and the wafer chuck is designed to have an ingenious heat transfer from the hot wafer to a cold chuck through the back side of the helium during processing. cooling system. Supporting the wafer chuck, such as the above ring assembly (eg, a focus ring, edge ring, shadow ring or deposition ring) of a substrate ring, and the ring assembly is accurately fitted on the wafer chuck, but has It allows it to be easily removed and replaced during the preventive maintenance (PM) cycle.
但是，上述氦氣背面方法之一問題係該晶圓夾頭仍可能無法透過該氦背側冷卻支持在環繞例如該基板環等之該晶圓之組件上。因此，該組件溫度會一直比該晶圓高。在該晶圓與周圍組件之間之不一致溫度造成一不良晶圓產率。 However, one of the problems with the above-described helium backing method is that the wafer chuck may still not be supported by the backside side cooling on the assembly surrounding the wafer such as the substrate ring. Therefore, the temperature of the component will always be higher than the wafer. The inconsistent temperature between the wafer and surrounding components creates a poor wafer yield.
此外，在具有上述構造之該電漿處理裝置中，可在該安裝台與該基板環之間在一減壓腔室內的一真空絕緣層，該真空絕緣層造成在該安裝台與該基板環之間的不良熱傳遞。如果形成該真空絕緣層，則該基板環可能不會被冷卻。該基板環之溫度的上升會造成在該晶圓之外周緣上實施之蝕刻之特性的劣化，例如，一蝕刻速度、一孔貫穿性質(可藉由蝕刻可靠地挖通至一預定深度之一性質)、及蝕刻之深寬比的劣化。 Further, in the plasma processing apparatus having the above configuration, a vacuum insulation layer may be disposed between the mounting table and the substrate ring in a decompression chamber, the vacuum insulation layer being formed at the mounting table and the substrate ring Poor heat transfer between. If the vacuum insulation layer is formed, the substrate ring may not be cooled. The rise in temperature of the substrate ring causes degradation of the characteristics of the etching performed on the periphery of the wafer, for example, an etching rate, a hole penetration property (which can be reliably dug by etching to a predetermined depth) Properties), and the degradation of the aspect ratio of the etch.
如果在這些條件下繼續該電漿程序，則熱會累積在該基板環上，導致該基板環之溫度不穩定，且這不利於已可在同一批中之複數個晶圓上實施之一均勻蝕刻程序。因此，在晶圓與周圍組件之間的平衡溫度變得非常重要。 If the plasma process is continued under these conditions, heat will accumulate on the substrate ring, causing the temperature of the substrate ring to be unstable, and this is not conducive to achieving uniformity on a plurality of wafers in the same batch. Etching procedure. Therefore, the equilibrium temperature between the wafer and the surrounding components becomes very important.
為了解決該等問題，已發展藉由改善在一基板環與一安裝台之間之熱傳遞效率，主動地控制一基板環之溫度的一方法。依據該習知技術，該熱傳遞效率係藉由將呈一凝膠狀之一熱傳遞片設置一基板環與一安裝台之間，且亦藉由將該基板環機械地加壓抵靠該安裝台來改善。 In order to solve such problems, a method of actively controlling the temperature of a substrate ring by improving the heat transfer efficiency between a substrate ring and a mounting table has been developed. According to the prior art, the heat transfer efficiency is achieved by placing a heat transfer sheet in the form of a gel between a substrate ring and a mounting table, and also by mechanically pressing the substrate ring against the Install the table to improve.
這種熱傳遞片對於改善在一基板環與一安裝台之間之熱傳遞是非常有效的。但是，該熱傳遞片係由凝膠聚合物製成，這會有一問題。該凝膠聚合物可能會黏著在與其接觸之金屬或一陶瓷表面上。特別地，當該基板環及該安裝台係機械地互相壓抵以增加其間之熱傳遞時，該熱 傳遞片之凝膠聚合物經常強力地黏著在該安裝台之表面上。在不使用一專用剝離夾具之情形下，無法輕易地移除該強力地黏著之熱傳遞片。這使得更換該基板環或該安裝台之工作效率大幅降低。 This heat transfer sheet is very effective for improving heat transfer between a substrate ring and a mounting table. However, the heat transfer sheet is made of a gel polymer, which has a problem. The gel polymer may adhere to the metal or ceramic surface it is in contact with. In particular, the heat is transmitted when the substrate ring and the mounting platform are mechanically pressed against each other to increase heat transfer therebetween. The gel polymer of the transfer sheet is often strongly adhered to the surface of the mounting table. The strongly adhered heat transfer sheet cannot be easily removed without using a dedicated peeling jig. This greatly reduces the work efficiency of replacing the substrate ring or the mounting table.
此外，該熱傳遞片之某些組件經常留在該基板環或該安裝台之表面上成為污垢或殘渣，或黏著物。在剝除該強力地黏著之熱傳遞片時，該表面必須保持清潔以便後續處理。 In addition, certain components of the heat transfer sheet often remain on the substrate ring or the surface of the mounting table as dirt or debris, or adhesive. When the strongly adhered heat transfer sheet is stripped, the surface must be kept clean for subsequent processing.
相反地，另一習知方法揭露一發明，該發明係有關於雖然機械地加壓一基板環，但是藉由實施使該熱傳遞片之至少一側為無黏著性，可由一安裝裝置輕易地移除該基板環。 Conversely, another conventional method discloses an invention relating to mechanically pressing a substrate ring, but by performing at least one side of the heat transfer sheet to be non-adhesive, it can be easily performed by a mounting device The substrate ring is removed.
在各上述習知方法中，均試圖透過一機械加壓單元在一基板環與一安裝裝置之間獲得熱傳遞。但是，該機械單元使該裝置之構造更複雜。因此，需要具有最佳熱傳遞能力、可靠及準確對齊，及在不需要複雜機械總成之情形下之可移除性的一基板環及一電漿處理裝置。 In each of the above conventional methods, it is attempted to obtain heat transfer between a substrate ring and a mounting device through a mechanical pressurizing unit. However, the mechanical unit complicates the construction of the device. Accordingly, there is a need for a substrate ring and a plasma processing apparatus that have optimal heat transfer capabilities, reliable and accurate alignment, and removability without the need for complex mechanical assemblies.
一種機械式夾具裝置，係安裝在一環形組件之一後表面上，且該環形組件環繞實施一程序之一基板之一外周緣，又，用以可分離地且自動對齊地安裝該環形組件在一安裝台上之該機械式夾具裝置包含一用以將該欲處理之基板安裝於其上之冷卻機構，其中該安裝台係進一步 安裝在一用以提供該基板之加工的真空或減壓腔室內，且在該環形組件之該後表面具有複數個孔；及用以可分離地對齊及使用該等孔，以一特定負載固定該環形組件之該後表面在該安裝台上的一設備。 A mechanical clamp device mounted on a rear surface of a ring assembly, and the ring assembly surrounds an outer periphery of one of the substrates of the program, and is detachably and automatically aligned to mount the ring assembly The mechanical clamp device on a mounting table includes a cooling mechanism for mounting the substrate to be processed thereon, wherein the mounting platform is further Mounted in a vacuum or decompression chamber for providing processing of the substrate, and having a plurality of holes on the rear surface of the ring assembly; and for detachably aligning and using the holes to be fixed by a specific load A device on the mounting table of the rear surface of the ring assembly.
在本發明之一第一態樣中，該設備包含具有一圓柱形之一夾環，且在一圓形端具有一向外延伸唇部，用以反覆地扣入及脫離在該後表面之各個孔。 In a first aspect of the invention, the apparatus includes a cylindrical one of the clamping rings and an outwardly extending lip at a rounded end for reversibly snapping in and out of the rear surface hole.
在本發明之另一態樣中，該機械式夾具裝置具有由該圓形端向下延伸至夾環之一側的複數個開縫區域，用以反覆地扣入及脫離在該後表面之其中一孔。 In another aspect of the invention, the mechanical clamp device has a plurality of slit regions extending downwardly from the rounded end to one side of the clamp ring for repetitively snapping in and out of the rear surface One of the holes.
配合藉由舉例顯示本發明之原理之附圖，可由以下詳細說青了解本發明之其他特徵及優點。 Other features and advantages of the present invention will become apparent from the Detailed Description of the Drawing.
1‧‧‧裝置 1‧‧‧ device
2‧‧‧晶圓 2‧‧‧ wafer
3‧‧‧腔室 3‧‧‧ chamber
4‧‧‧靜電夾頭 4‧‧‧Electrical chuck
4a‧‧‧頂表面 4a‧‧‧ top surface
5‧‧‧基座 5‧‧‧Base
6‧‧‧側排氣通道 6‧‧‧ side exhaust passage
7‧‧‧排氣板 7‧‧‧Exhaust plate
8‧‧‧反應腔室 8‧‧‧Reaction chamber
9‧‧‧排氣腔室 9‧‧‧Exhaust chamber
10‧‧‧排氣管 10‧‧‧Exhaust pipe
11‧‧‧靜電電極板 11‧‧‧Electrostatic electrode plate
12‧‧‧DC電源 12‧‧‧DC power supply
13‧‧‧絕緣構件 13‧‧‧Insulating components
14‧‧‧基板環 14‧‧‧Substrate ring
14a‧‧‧頂表面 14a‧‧‧ top surface
14b‧‧‧底表面；後表面 14b‧‧‧ bottom surface; rear surface
14c‧‧‧凸緣 14c‧‧‧Flange
15‧‧‧氣體導入蓮蓬頭 15‧‧‧Gas introduction shower head
16‧‧‧高頻電源 16‧‧‧High frequency power supply
17‧‧‧下高頻電源 17‧‧‧High frequency power supply
18‧‧‧氣體導入管 18‧‧‧ gas introduction tube
19‧‧‧緩衝腔室 19‧‧‧ buffer chamber
20‧‧‧上電極板 20‧‧‧Upper electrode plate
21‧‧‧氣孔 21‧‧‧ stomata
22‧‧‧冷媒通道 22‧‧‧Refrigerant channel
23‧‧‧冷媒供應管 23‧‧‧Refrigerant supply pipe
24‧‧‧熱傳遞氣體供應孔 24‧‧‧heat transfer gas supply hole
25‧‧‧孔 25‧‧‧ hole
25a‧‧‧較大直徑段；上段 25a‧‧‧large diameter section; upper section
25b‧‧‧較小直徑段 25b‧‧‧Small diameter section
26‧‧‧孔 26‧‧‧ holes
26a‧‧‧上部；較寬部份 26a‧‧‧ upper part; wider part
26b‧‧‧下部 26b‧‧‧ lower
27‧‧‧機械式夾具總成 27‧‧‧Mechanical clamp assembly
28‧‧‧夾環 28‧‧‧Clip ring
29‧‧‧唇部 29‧‧‧Lip
29a‧‧‧向內傾斜部份 29a‧‧‧Inwardly inclined part
29b‧‧‧凹陷、向內傾斜部份 29b‧‧‧Sag, inwardly inclined part
30‧‧‧端 30‧‧‧
31‧‧‧狹縫 31‧‧‧Slit
32‧‧‧夾具螺栓 32‧‧‧Clamp bolts
33‧‧‧軸套環 33‧‧‧ shaft collar
34‧‧‧肋部 34‧‧‧ ribs
以下，參照示範圖式詳細說明本發明如下：圖1係一截面示意圖，顯示有關本發明一實施例之電漿處理裝置之一例；圖2係一側視/俯視立體圖，顯示本發明之一基板環及一安裝台之一對應圓柱形靜電夾頭；圖3A至D分別係側視、俯視、仰視及(沿圖3B之線3A-3A之圖3A之區域3C之)放大截面圖，顯示本發明之基板環；圖4A至B係側視截面圖，顯示依據本發明之一機械式夾具總成，且該基板環分別在安裝及未安裝位置； 圖5A至C分別係俯視、側視及(沿圖5A之線5C-5C)截面圖，顯示本發明之一夾環；圖6A至C分別係俯視、側視及(沿圖6A之線6C-6C)截面圖，顯示本發明之一軸套環；及圖7係在本發明之基板環之一底側，該等孔之另一結構的放大截面圖。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings in which: FIG. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment of the present invention; and FIG. 2 is a side view/top view of a substrate showing a substrate of the present invention. One of the ring and one mounting table corresponds to a cylindrical electrostatic chuck; FIGS. 3A to D are respectively a side view, a plan view, a bottom view, and an enlarged cross-sectional view (area 3C of FIG. 3A along the line 3A-3A of FIG. 3B), showing the present Figure 4A to B are side cross-sectional views showing a mechanical clamp assembly in accordance with the present invention, and the substrate rings are in installed and unmounted positions, respectively; 5A to 5C are plan views, side views, and (5C-5C along the line of FIG. 5A), respectively, showing a clamp ring of the present invention; FIGS. 6A to C are respectively a plan view, a side view, and (6C along the line of FIG. 6A). -6C) A cross-sectional view showing a bushing ring of the present invention; and Fig. 7 is an enlarged cross-sectional view showing another structure of the holes on the bottom side of one of the substrate rings of the present invention.
本發明係有關於用於有關一欲處理之基板之一安裝裝置之一基板環或其他類似組件的機械式夾具總成。因此，首先，說明用以實施本發明之一欲處理之基板之該安裝裝置。 The present invention is directed to a mechanical clamp assembly for a substrate ring or other similar component associated with a mounting device for a substrate to be processed. Therefore, first, the mounting device for carrying out the substrate to be processed of the present invention will be described.
圖1係顯示有關本發明一實施例之電漿處理裝置1之一例的截面示意圖。該裝置1包括一腔室3以收納一半導體晶圓2且一靜電夾頭4及一圓柱形基座5係配置在該腔室3內作為一安裝台之一部份以便安裝該晶圓2在該安裝台上。一用以排氣之側排氣通道6係形成在該腔室3之一內壁表面與該基座5之一側表面之間且包含一穿孔板之一排氣板7係配置在通過該側排氣通道6之中間。該排氣板7具有作為一分隔該裝置1為上與下部之隔板的功能，產生作為一反應腔室8之上部及作為一排氣腔室9之下部。該排氣腔室9具有一通入其中之排氣管10且該腔室3係藉由一真空泵(未圖示)排空。 Fig. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus 1 according to an embodiment of the present invention. The device 1 includes a chamber 3 for housing a semiconductor wafer 2, and an electrostatic chuck 4 and a cylindrical base 5 are disposed in the chamber 3 as part of a mounting table for mounting the wafer 2 On the mounting platform. An exhaust passage 6 for exhausting is formed between an inner wall surface of the chamber 3 and a side surface of the base 5 and includes a perforated plate. The exhaust plate 7 is disposed through the exhaust plate 7 The middle of the side exhaust passage 6. The venting plate 7 has a function as a partition separating the upper and lower portions of the apparatus 1 to be formed as an upper portion of a reaction chamber 8 and as a lower portion of an exhaust chamber 9. The exhaust chamber 9 has an exhaust pipe 10 that opens therein and is evacuated by a vacuum pump (not shown).
包含一靜電電極板11之該靜電夾頭4係配置在該 基座5上方。該靜電夾頭4具有有一較小直徑之一上碟狀構件放在一下碟狀構件之頂部的形狀。一層介電材(例如陶瓷)係形成在該上碟狀構件之上表面上，且藉由施加在與一DC電源12連接之該靜電電極板11上的一高DC電壓，在該上碟狀構件之該表面上產生一介電電位，並且安裝在其上之該晶圓2係藉由一庫侖力或Johnson Rahbek力吸附及支持。 The electrostatic chuck 4 including an electrostatic electrode plate 11 is disposed in the Above the base 5. The electrostatic chuck 4 has a shape in which one of the smaller diameters is placed on the top of the lower dish member. A dielectric material (for example, ceramic) is formed on the upper surface of the upper dish member and is applied to the upper electrode plate 11 by a high DC voltage applied to the electrostatic electrode plate 11 connected to a DC power source 12. A dielectric potential is generated on the surface of the member, and the wafer 2 mounted thereon is adsorbed and supported by a Coulomb force or Johnson Rahbek force.
該靜電夾頭4係藉由螺接固定在該基座5上且一基板環14安裝在一絕緣構件13與該晶圓2之間。該絕緣構件13係用以防止電漿向一外周緣方向太過分散且控制一電場以防止電漿在太過分散後由該排氣板7漏至一排氣側。該基板環14之表面係由例如矽及碳化矽之一導電材料製成。該基板環14覆蓋該晶圓2之一外周緣，其表面係暴露於該反應腔室8之空間，且具有一使在該反應腔室中之電漿匯聚在該晶圓上的功能。 The electrostatic chuck 4 is fixed to the susceptor 5 by screwing, and a substrate ring 14 is mounted between an insulating member 13 and the wafer 2. The insulating member 13 is for preventing the plasma from being excessively dispersed toward an outer peripheral direction and controlling an electric field to prevent the plasma from leaking from the exhaust plate 7 to an exhaust side after being excessively dispersed. The surface of the substrate ring 14 is made of a conductive material such as tantalum and tantalum carbide. The substrate ring 14 covers the outer periphery of one of the wafers 2, the surface of which is exposed to the space of the reaction chamber 8, and has a function of concentrating the plasma in the reaction chamber on the wafer.
電漿係藉由施加至高頻電源16之高頻功率及由該下高頻電源17施加至該基座5之高頻功率的作用，在該反應腔室內產生。一反應氣體係由一氣體導入管18供應至該氣體導入蓮蓬頭15且在藉由透過一緩衝腔室19通過設置在一上電極板20中的許多氣孔21轉換成電漿之後進一步供應至該反應腔室8。 The plasma is generated in the reaction chamber by the high frequency power applied to the high frequency power source 16 and the high frequency power applied to the susceptor 5 by the lower high frequency power source 17. A reaction gas system is supplied from a gas introduction pipe 18 to the gas introduction showerhead 15 and further supplied to the reaction after being converted into a plasma by passing through a buffer chamber 19 through a plurality of pores 21 provided in an upper electrode plate 20. Chamber 8.
該晶圓2在暴露於電漿後溫度上升且因此藉熱傳遞至該基座5冷卻。因此，該基座5係由一具有良好熱傳導性之金屬材料形成且一冷媒通道22設置在其中以使例如水及乙二醇之冷媒由一冷媒供應管23循環以便冷卻。 The wafer 2 rises in temperature after exposure to the plasma and is therefore cooled by heat transfer to the susceptor 5. Therefore, the susceptor 5 is formed of a metal material having good thermal conductivity and a refrigerant passage 22 is disposed therein so that refrigerant such as water and ethylene glycol is circulated by a refrigerant supply pipe 23 for cooling.
許多熱傳遞氣體供應孔24係設置在吸附該晶圓2之表面上且該晶圓2之後表面係藉由使氦流出這些孔來冷卻。 A plurality of heat transfer gas supply holes 24 are provided on the surface of the wafer 2 and the surface of the wafer 2 is cooled by flowing the crucibles out of the holes.
因此，該晶圓2被吸附及支持在該靜電夾頭4上。該靜電夾頭4係藉由螺接固定在該基座5上且該冷媒通道22係設置在該靜電夾頭4內。 Therefore, the wafer 2 is adsorbed and supported on the electrostatic chuck 4. The electrostatic chuck 4 is fixed to the base 5 by screwing and the refrigerant passage 22 is disposed in the electrostatic chuck 4.
該基板環14係一環形組件，且該環形組件具有由一介電材料或一導電材料製成之環形本體。應注意的是本發明之環形組件不限於基板環且可包括其他組件，例如聚焦邊緣環、遮蔽環或沈積環。此外，應了解的是該等組件可具有環形以外之在所屬技術領域中習知之形狀，例如一正方形、矩形等。通常，該等組件可由矽、石英、氧化鋁、或在所屬技術領域中習知之其他適當材料製成。 The substrate ring 14 is an annular component having an annular body made of a dielectric material or a conductive material. It should be noted that the ring assembly of the present invention is not limited to a substrate ring and may include other components such as a focus edge ring, a shadow ring or a deposition ring. Moreover, it should be understood that the components can have shapes other than a ring that are well known in the art, such as a square, rectangle, and the like. Typically, the components can be made of tantalum, quartz, alumina, or other suitable materials known in the art.
圖2係顯示本發明之該基板環14及該安裝台之該圓靜電夾頭4的側視/俯視立體圖。如圖2所示，該基板環14之頂表面14a係實質平坦的且顯示沒有開口。如圖所示，該靜電夾頭4之頂表面具有複數個均勻分開之孔25。這些孔可具有任何多種環形(或其他形狀)之布置，且它們甚至可利用已預先存在一標準靜電夾頭4或安裝台上的孔。 2 is a side/top plan view showing the substrate ring 14 of the present invention and the circular electrostatic chuck 4 of the mounting table. As shown in Figure 2, the top surface 14a of the substrate ring 14 is substantially flat and shows no openings. As shown, the top surface of the electrostatic chuck 4 has a plurality of evenly spaced holes 25. These holes can have any of a variety of annular (or other shapes) arrangements, and they can even utilize holes that are pre-existing on a standard electrostatic chuck 4 or mounting table.
圖3A至D分別顯示該基板環14之側視、俯視、仰視及(沿圖3B之線3A-3A之圖3A之區域3C之)放大截面圖。該基板環14之底或後表面具有形成於其中之複數個均勻分開、圓形開口或孔26。又，如圖3D(及如下述之圖4A 至B)所示，這些孔26只部份地延伸穿過該基板環14之厚度，使得該等孔26被隱藏且由該環之上方完全看不到。因此，本發明完全不需要改變該基板環14之頂表面。事實上，如果在該靜電夾頭4上使用預先存在之孔25，則本發明只需要對一現有安裝裝置進行極少之機械加工或改變。 3A through D show enlarged side views of the substrate ring 14, side view, top view, and (area 3C of Fig. 3A along line 3A-3A of Fig. 3B), respectively. The bottom or back surface of the substrate ring 14 has a plurality of evenly spaced, circular openings or apertures 26 formed therein. Again, as shown in Figure 3D (and Figure 4A below) As shown in B), the holes 26 extend only partially through the thickness of the substrate ring 14 such that the holes 26 are hidden and completely invisible from above the ring. Therefore, the present invention does not require any change in the top surface of the substrate ring 14. In fact, if pre-existing holes 25 are used on the electrostatic chuck 4, the present invention requires only minimal machining or modification of an existing mounting device.
圖4A至B顯示本發明之機械式夾具總成27之一實施例之側視截面圖，且該基板環14係在安裝位置之前(或脫扣位置)且亦在該安裝(扣合)位置。如由這些圖可知，該基板環14通常可具有一比該安裝台之靜電夾頭4大之總直徑。 4A-B show side cross-sectional views of one embodiment of a mechanical clamp assembly 27 of the present invention, and the substrate ring 14 is before the mounting position (or trip position) and also in the mounting (fastening) position. . As can be seen from these figures, the substrate ring 14 can generally have a larger overall diameter than the electrostatic chuck 4 of the mounting table.
該截面圖亦顯示在該環14之後表面之用於該等孔26之一缺口設計的一例子。如在這些圖中(且在圖3D與7中)詳細地所示，該等孔26包括較靠近該頂表面14a且具有一較大直徑之一上部26a，及向該基板環14之底表面14b通出之一下部26b。本質上，這構造在該孔26之壁內形成一圓形凸緣14c，且該凸緣14c表面向內延伸且接著向該環之底表面14b向外傾斜。本質上，這些孔形成用於本發明之按扣配合機構之一“母”部份。 The cross-sectional view also shows an example of a notch design for one of the holes 26 in the surface behind the ring 14. As shown in detail in these figures (and in Figures 3D and 7), the apertures 26 include an upper portion 26a that is closer to the top surface 14a and has a larger diameter, and a bottom surface toward the substrate ring 14. 14b opens one of the lower portions 26b. Essentially, this configuration forms a circular flange 14c in the wall of the bore 26, and the surface of the flange 14c extends inwardly and then slopes outwardly toward the bottom surface 14b of the ring. Essentially, the holes form a "mother" portion of the snap fit mechanism of the present invention.
本發明之機械式夾具總成27包括一用以***及定位在該靜電夾頭4上之各個孔25a內的圓柱形夾環28。關於該等孔25，如圖4A至B所示，在該靜電夾頭4中之各孔25具有在該夾頭4之頂表面4a上開口的一較大直徑段25a，及在段25a之一中心且更深地延伸入該夾頭之一較小直徑段25b。 The mechanical clamp assembly 27 of the present invention includes a cylindrical clamp ring 28 for insertion and positioning within each of the apertures 25a of the electrostatic chuck 4. With respect to the holes 25, as shown in Figs. 4A to B, each of the holes 25 in the electrostatic chuck 4 has a larger diameter section 25a opening on the top surface 4a of the chuck 4, and in the section 25a A center and deeper extend into one of the smaller diameter segments 25b of the collet.
本發明之夾環28可由可彈性變形之材料製成，例如金屬、塑膠(如PAI或PEEK)、橡膠或在所屬技術領域中習知之其他適當材料。 The clamp ring 28 of the present invention may be formed from an elastically deformable material such as metal, plastic (e.g., PAI or PEEK), rubber, or other suitable material as is known in the art.
如在圖5A至C進一步所示，該夾環28在一圓形端30具有一向外延伸唇部29。這唇部29具有一向頂部之向內傾斜部份29a及一向底部之凹陷、向內傾斜部份29b。因此，這具有唇部29之圓形端30本質上形成本發明之按扣配合機構之一“公”部份。 As further shown in Figures 5A-C, the clamp ring 28 has an outwardly extending lip 29 at a rounded end 30. This lip portion 29 has an inwardly inclined portion 29a and a concave portion inwardly and an inwardly inclined portion 29b. Thus, the rounded end 30 having the lip 29 essentially forms one of the "male" portions of the snap fit mechanism of the present invention.
如在圖4A與4B之脫扣及扣合圖中所示，在操作時，該夾環28先被壓入該基板環14之孔中，使得該圓形端30稍微向內壓縮且各個傾斜部份讓該端30滑入，且被收納在該孔26之較寬部份26a內。即，在該基板環14上之該孔26內的圓形凸緣14c與該夾環28形成一可分離之干涉配合。在各個孔26內之凸緣14c之配置形成一“瓶頸”，且在該端30區域中之該夾環28必須向內壓縮，以便通過該“瓶頸”。在通過該干涉(瓶頸)後，該端30擴大或釋放返回其自然狀態。因此，該凸緣14c暫時防止該唇部29由該孔26脫出，產生該“扣合”且確保該夾環28安裝在該基板環14之各個孔26中，直到該夾環28可再被壓縮而使該端30通過該瓶頸，以便它“脫扣”及由該基板環14分離。藉由適當地設計該孔26及該唇部29區域之尺寸(公差)，可改變及控制用於該扣合/脫扣操作之時間、力量及其他因素。 As shown in the trip and snap diagrams of Figures 4A and 4B, in operation, the clamp ring 28 is first pressed into the aperture of the substrate ring 14 such that the rounded end 30 is slightly compressed inwardly and tilted. The portion 30 is slid into place and received within the wider portion 26a of the aperture 26. That is, the circular flange 14c in the aperture 26 in the substrate ring 14 forms a separable interference fit with the clamp ring 28. The configuration of the flange 14c within each aperture 26 forms a "bottleneck" and the clamp ring 28 must be compressed inwardly in the region of the end 30 to pass the "bottleneck". After passing the interference (bottleneck), the end 30 expands or releases back to its natural state. Thus, the flange 14c temporarily prevents the lip 29 from coming out of the aperture 26, creating the "fast fit" and ensuring that the clamp ring 28 is mounted in each of the apertures 26 of the substrate ring 14 until the clamp ring 28 can be re-attached The end 30 is compressed to pass the neck so that it "trips" and is separated by the substrate ring 14. By appropriately designing the dimensions (tolerances) of the aperture 26 and the area of the lip 29, the time, force and other factors for the snap/trip operation can be varied and controlled.
為進一步協助有關上述扣入/脫扣操作之壓縮及釋放該夾環28之圓形端30區域，複數個狹縫31可部份地 且縱向地由邊緣且沿該夾環28之側邊向下延伸。因此，上述配置允許該夾環28相對於該基板環14之後表面輕易地自動對齊及確實附接/分離。 To further assist in the compression and release of the rounded end 30 region of the clamping ring 28, the plurality of slits 31 may partially And extending longitudinally from the edge and down the sides of the clamp ring 28. Thus, the above configuration allows the clip ring 28 to be easily automatically aligned and indeed attached/detached relative to the rear surface of the substrate ring 14.
該機械式夾具總成27可更包括一軸套環33(如圖6A至C之俯視、側視及截面圖詳細所示)，該軸套環33可設置在該夾環28與該夾具螺栓32之間，作為其中之另一保護及內襯。該軸套環33可由用於該夾環28之上述類似材料製成。 The mechanical clamp assembly 27 can further include a bushing collar 33 (shown in plan view, side view and cross-sectional view in detail in FIGS. 6A-C), the bushing collar 33 can be disposed on the clamp ring 28 and the clamp bolt 32. Between, as another protection and lining. The collar 33 can be made of the similar materials described above for the clamp ring 28.
請再參閱圖4A至B，本發明亦可包括一夾具螺栓32，該夾具螺栓32係用以延伸穿過在該夾環28及軸套環33之另一端之一中央開口且接合及可分離地固定在該靜電夾頭4中之各個孔25的一段25b。該夾具螺栓32可為M5或任何標準或適當尺寸，可由金屬或其他適當材料製成，且可具有螺紋或具有所屬技術領域中習知之任何其他接合裝置。 4A to B, the present invention may also include a clamp bolt 32 for extending through a central opening at one of the other ends of the clamp ring 28 and the collar 33 and being detachable and separable. A section 25b of each of the holes 25 in the electrostatic chuck 4 is fixed. The clamp bolt 32 can be M5 or any standard or suitable size, can be made of metal or other suitable material, and can be threaded or have any other engagement means as is known in the art.
該夾具螺栓32與該孔25之段25b之鎖緊施加一壓力在該可彈性變形之軸套環33及該夾環28上，且在該螺栓鎖固之該靜電夾頭4之該孔25上產生一轉矩。因此，該軸套環33有助於分散及吸收所施加之壓力以保護該夾環28及該螺栓32，及防止該螺栓32變鬆。該軸套環33亦保護該螺栓32及該夾環28之相對表面不受磨損。但是，當在該等負載下時，該軸套環33亦允許該夾環28之某種程度的自移動(可容許誤差)。藉由適當地設計例如軸套33之夾具總成的尺寸(公差)，吾人可改變及控制該等自移動之量，以 將該夾環28與在該基板環14之後表面之該孔26在上述扣合/脫扣操作時之適當及快速對齊最佳化。 The locking bolt 32 and the locking portion 25b of the hole 25 exert a pressure on the elastically deformable collar 33 and the clamping ring 28, and the hole 25 of the electrostatic chuck 4 is locked by the bolt. A torque is generated on it. Therefore, the collar 33 helps to disperse and absorb the applied pressure to protect the clamp ring 28 and the bolt 32, and to prevent the bolt 32 from becoming loose. The collar 33 also protects the opposing surfaces of the bolt 32 and the clamp ring 28 from wear. However, the collar 33 also allows some degree of self-movement of the clamp ring 28 (allowable tolerance) when under these loads. By appropriately designing the dimensions (tolerances) of the clamp assembly such as the bushing 33, we can change and control the amount of such self-movement to The proper and rapid alignment of the clamp ring 28 with the aperture 26 on the rear surface of the substrate ring 14 during the snap-on/trip operation described above is optimized.
在一實施例中，當鎖緊時，該螺栓會承受一大約601b之負載且會受到大約¼最終拉伸強度(12,000psi)之應力。在該負載及定位時，該機械式夾具總成27之夾環28可使該對應基板環14及晶圓2與該靜電夾頭4及安裝台準確、簡單且適當地對齊。此外，該夾具螺栓32係選擇及/或設計成可提供該特定負載使得在該基板環14之後表面與該安裝台之靜電夾頭4之表面之間的熱傳遞接觸面積最大或最佳化。對於防止在兩表面之間形成一間隙及上述真空絕緣層，該最佳化在一真空腔室中特別有價值。 In one embodiment, when locked, the bolt will withstand a load of approximately 601b and will be subjected to a stress of approximately 1⁄4 final tensile strength (12,000 psi). During the loading and positioning, the clamp ring 28 of the mechanical clamp assembly 27 allows the corresponding substrate ring 14 and wafer 2 to be accurately, simply and properly aligned with the electrostatic chuck 4 and the mounting table. Additionally, the clamp bolts 32 are selected and/or designed to provide this particular load such that the heat transfer contact area between the surface of the substrate ring 14 and the surface of the electrostatic chuck 4 of the mounting table is maximized or optimized. This optimization is particularly valuable in a vacuum chamber for preventing the formation of a gap between the two surfaces and the vacuum insulation layer described above.
圖7顯示設計成在該基板環14之後表面中之孔26的另一例。在圖7所示之配置中，由該後表面突出之另外肋部34可進一步引導該夾環28之圓形端30輕易且準確地自動對齊及定位在各個孔26。即，一手動或機械裝置可環繞該後表面14b移動該夾具28之圓形邊緣30直到它接合且被該肋部34引導而適當定位，以便完成上述“按扣配合”固定。 FIG. 7 shows another example of a hole 26 designed to be in the surface behind the substrate ring 14. In the configuration shown in FIG. 7, the additional ribs 34 projecting from the rear surface can further guide the rounded end 30 of the clamp ring 28 to be easily and accurately aligned and positioned in each of the apertures 26. That is, a manual or mechanical device can move the rounded edge 30 of the clamp 28 about the rear surface 14b until it engages and is properly positioned by the rib 34 to complete the "snap fit" fixation described above.
應了解的是本發明之該基板環14或其他類似環形組件可以是一單環形本體，或它亦可包含可配合在一起以形成一整體部件之一以上之環形本體的一總成。舉例而言，該基板環14可包括可配合在一起以形成一整體部件之兩不同直徑之環形部件。如可在所屬技術領域中實施地，可預想到許多複數個組合環之類似組合。又，如上所述， 應可清楚地了解該組件亦不只限於環形狀且可具有例如正方形、矩形、其他多邊形等之其他形狀。 It will be appreciated that the substrate ring 14 or other similar annular component of the present invention can be a single annular body, or it can comprise an assembly that can be mated together to form an annular body of more than one integral component. For example, the substrate ring 14 can include two different diameter annular members that can be mated together to form a unitary component. Similar combinations of a plurality of combination rings are envisioned as may be practiced in the art. Again, as mentioned above, It should be clearly understood that the assembly is also not limited to ring shapes and may have other shapes such as squares, rectangles, other polygons, and the like.
在操作時，本發明之機械式夾具總成27提供一用以快速且穩定地定位組件在該真空腔室內之極簡單總成。此外，與其他較複雜之總成不同，該配置具有在安裝時看不到(隱藏)之優點。 In operation, the mechanical clamp assembly 27 of the present invention provides a very simple assembly for quickly and stably positioning the assembly within the vacuum chamber. In addition, unlike other more complex assemblies, this configuration has the advantage of being invisible (hidden) at the time of installation.
只藉由使該夾環28***該靜電夾頭4之一孔25之上段25a，且該螺栓32鎖緊在其中並且固定在該孔之各段25b上，該基板環14便可因上述狹縫31而更容易地，藉由手動地或機械地稍微壓縮該夾環28，由該夾環28之唇部29脫扣(如圖4A所示)。接著，一更換物可透過一類似壓縮操作扣合在該夾環28上(如圖4B所示)，以在一PM周期進行一快速且穩定定位之更換。 Only by inserting the clamp ring 28 into the upper portion 25a of the hole 25 of the electrostatic chuck 4, and the bolt 32 is locked therein and fixed on each segment 25b of the hole, the substrate ring 14 can be narrowed by the above The slit 31 is more easily removed by manually or mechanically compressing the clamp ring 28 from the lip 29 of the clamp ring 28 (as shown in Figure 4A). Next, a replacement can be snapped onto the clamp ring 28 by a similar compression operation (as shown in Figure 4B) for a quick and stable positioning change in a PM cycle.
此外，該夾環28(及該任選之軸套環33)之彈性變形性容許該總成在該系統之熱膨脹與收縮下維持一足夠夾持力。由於該總成在整個該等熱膨脹與收縮過程留在一線性彈性範圍內，故其設計可維持一足夠夾持力/負載，以便提供該可分離組件之穩定、準確定位。在該夾環28及軸套環33中之彈性能量的儲存亦防止由於該等熱效應對其他組件造成之破壞。 Moreover, the elastic deformability of the clamp ring 28 (and the optional collar 16) allows the assembly to maintain a sufficient clamping force under thermal expansion and contraction of the system. Since the assembly remains in a linear elastic range throughout the thermal expansion and contraction processes, it is designed to maintain a sufficient clamping force/load to provide stable, accurate positioning of the separable component. The storage of the elastic energy in the clamp ring 28 and the collar ring 33 also prevents damage to other components due to such thermal effects.
在本發明之另一實施例中，複數個條平坦熱傳遞片(味顯示)可被夾在該基板環14與該靜電夾頭4之間，且在該等機械式夾具總成27之間，用以進一步改善在該基板環14與該安裝台之間的熱傳遞。該熱傳遞片可事先與該基 板環14結合成一體。該熱傳遞片係用來藉由被夾在該基板環14與該靜電夾頭4之兩接觸表面之間促進熱傳遞且可由一具有良好撓性及熱傳導性之聚合材料(適合地凝膠聚合物)製成。在本發明中，更有利的是將該熱傳遞片之一表面事先黏著在該基板環14上使得在該熱傳遞片與該基板環14之間的熱傳遞不會損失。 In another embodiment of the invention, a plurality of strips of flat heat transfer sheets (flavor display) can be sandwiched between the substrate ring 14 and the electrostatic chuck 4, and between the mechanical clamp assemblies 27 To further improve heat transfer between the substrate ring 14 and the mounting table. The heat transfer sheet can be previously associated with the base The plate rings 14 are integrated into one. The heat transfer sheet is used to promote heat transfer by being sandwiched between the substrate ring 14 and the contact surface of the electrostatic chuck 4 and can be a polymer material having good flexibility and thermal conductivity (suitable for gel polymerization) Made of). In the present invention, it is more advantageous to previously adhere one surface of the heat transfer sheet to the substrate ring 14 so that heat transfer between the heat transfer sheet and the substrate ring 14 is not lost.
該片之成形厚度可較佳地為0.1至1.0mm且形成一0.2至0.5mm之厚度的一片係特佳的。形成之厚度小於0.1mm之一片具有一低硬度且會具有不良處理性及低黏著性。另一方面，如果該厚度超過1mm，則熱阻增加使得所欲熱傳導性會無法得到。 The sheet may preferably have a forming thickness of 0.1 to 1.0 mm and form a sheet having a thickness of 0.2 to 0.5 mm. One of the sheets having a thickness of less than 0.1 mm is formed to have a low hardness and may have poor handleability and low adhesion. On the other hand, if the thickness exceeds 1 mm, the increase in thermal resistance makes the desired thermal conductivity unobtainable.
應了解的是上述實施例只是說明可表示本發明之原理之應用的許多可能特定實施例中之一實施例。例如，某人可預想到在各種晶圓製造程序(例如蝕刻、化學蒸氣沈積法(CVD)或物理蒸氣沈積(PVD))中使用本發明之機械式夾具總成。在不偏離本發明之精神與範圍的情形下，所屬技術領域中具有通常知識者可輕易地想出複數個及變化之其他配置。 It will be appreciated that the above-described embodiments are merely illustrative of one of many possible specific embodiments of the application that may represent the principles of the invention. For example, one can envision the use of the mechanical clamp assembly of the present invention in various wafer fabrication processes, such as etching, chemical vapor deposition (CVD), or physical vapor deposition (PVD). Other configurations that are common to those skilled in the art can readily come up with multiple and variations without departing from the spirit and scope of the invention.
4a‧‧‧頂表面 4a‧‧‧ top surface
14‧‧‧基板環 14‧‧‧Substrate ring
14a‧‧‧頂表面 14a‧‧‧ top surface
25‧‧‧孔 25‧‧‧ hole
25a‧‧‧較大直徑段；上段 25a‧‧‧large diameter section; upper section
25b‧‧‧較小直徑段 25b‧‧‧Small diameter section
26a‧‧‧上部；較寬部份 26a‧‧‧ upper part; wider part
27‧‧‧機械式夾具總成 27‧‧‧Mechanical clamp assembly
28‧‧‧夾環 28‧‧‧Clip ring
32‧‧‧夾具螺栓 32‧‧‧Clamp bolts
33‧‧‧軸套環 33‧‧‧ shaft collar
Claims (11)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261725395P | 2012-11-12 | 2012-11-12 |
Publications (1)
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| TW201430996A true TW201430996A (en) | 2014-08-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102140511A TW201430996A (en) | 2012-11-12 | 2013-11-07 | Mechanical clamping assembly for a ring-shaped component within a vacuum chamber for substrate processing |
Country Status (2)
| Country | Link |
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| TW (1) | TW201430996A (en) |
| WO (1) | WO2014075024A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI595530B (en) * | 2016-04-14 | 2017-08-11 | 北京北方華創微電子裝備有限公司 | Apparatus for plasma treatment and operation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4444437B2 (en) * | 2000-03-17 | 2010-03-31 | キヤノンアネルバ株式会社 | Plasma processing equipment |
| EP1458019A3 (en) * | 2003-03-13 | 2005-12-28 | VenTec Gesellschaft für Venturekapital und Unternehmensberatung | Mobile transportable electrostatic substrate holders |
| US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
| US8419959B2 (en) * | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| US9171702B2 (en) * | 2010-06-30 | 2015-10-27 | Lam Research Corporation | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber |
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- 2013-11-11 WO PCT/US2013/069511 patent/WO2014075024A1/en active Application Filing
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI595530B (en) * | 2016-04-14 | 2017-08-11 | 北京北方華創微電子裝備有限公司 | Apparatus for plasma treatment and operation method thereof |
| US10170285B2 (en) | 2016-04-14 | 2019-01-01 | Beijing Naura Microelectronics Equipment Co., Ltd | Method of operating semiconductor manufacturing apparatus and semiconductor devices |
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| WO2014075024A1 (en) | 2014-05-15 |
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