TW201427110A - LED package and method for manufacturing the same - Google Patents

LED package and method for manufacturing the same Download PDF

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Publication number
TW201427110A
TW201427110A TW101149999A TW101149999A TW201427110A TW 201427110 A TW201427110 A TW 201427110A TW 101149999 A TW101149999 A TW 101149999A TW 101149999 A TW101149999 A TW 101149999A TW 201427110 A TW201427110 A TW 201427110A
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Taiwan
Prior art keywords
electrode
emitting diode
package structure
light emitting
diode package
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TW101149999A
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Chinese (zh)
Inventor
Hou-Te Lin
Pin-Chuan Chen
Lung-Hsin Chen
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Advanced Optoelectronic Tech
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Publication of TW201427110A publication Critical patent/TW201427110A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A method for manufacturing a light emitting diode (LED) package includes the following steps: providing a lead frame with multiple rows of a first and a second electrode alternatively arranged thereon, wherein a row of the first electrodes are linearly connected by a connecting bar located at an end of the first electrode and a row of the second electrodes are linearly connected by another connecting bar located at an end of the second electrode opposite to the first electrode; forming a reflecting cup between every two adjacent connecting bars to encapsulate the first and the second electrode, each of the reflecting cups defining a recess; dicing the connecting bar located at two opposite lateral sides of the reflecting cup into a plurality of separate connecting electrode, wherein the connecting electrode is correspondingly connected to a adjacent first electrode or a adjacent second electrode, the connecting electrode having a smaller width than that of the corresponding electrode; disposing an LED die in the recess and electrically connecting to the first electrode and the second electrode; forming an encapsulation layer in the recess to cover the LED die; dicing the reflecting cups. The LED package is also provided.

Description

發光二極體封裝結構的製造方法及發光二極體封裝結構Light-emitting diode package structure manufacturing method and light-emitting diode package structure

本發明涉及一種半導體發光元件，特別涉及一種發光二極體封裝結構的製造方法及發光二極體封裝結構。The present invention relates to a semiconductor light emitting device, and more particularly to a method of fabricating a light emitting diode package structure and a light emitting diode package structure.

發光二極體封裝結構（light emitting diode，LED）作為一種高效的發光源，具有環保、省電、壽命長等諸多特點已經被廣泛的運用於各種領域。As a highly efficient light source, the light emitting diode (LED) has many characteristics such as environmental protection, power saving, long life and the like, and has been widely used in various fields.

在應用到具體領域中之前，發光二極體封裝結構還需要進行封裝，以保護發光二極體封裝結構晶片，從而獲得較高的發光效率及較長的使用壽命。Before being applied to a specific field, the LED package structure needs to be packaged to protect the LED of the LED package structure, thereby achieving high luminous efficiency and long service life.

一般的發光二極體封裝結構通常先成型反射杯，在反射杯成型後再將電極彎折貼設於反射杯的底面及側面上。然而，這種方法製造的發光二極體封裝結構的密合度不佳，中的電極與反射杯之間結合不緊密，電極在使用過程中容易鬆動或脫落。In general, the LED package structure is usually formed by forming a reflector cup, and after the reflector cup is formed, the electrode is bent and attached to the bottom surface and the side surface of the reflector cup. However, the light-emitting diode package structure manufactured by this method has poor adhesion, and the bonding between the electrode and the reflective cup is not tight, and the electrode is easy to loose or fall off during use.

有鑑於此，有必要提供一種有效提升發光二極體封裝結構密合度的製造方法及發光二極體封裝結構。In view of the above, it is necessary to provide a manufacturing method and a light emitting diode package structure that effectively improve the adhesion of the light emitting diode package structure.

一種發光二極體封裝結構的製造方法，包括以下步驟：提供裝設有多列第一電極和第二電極的引線架，該第一電極、第二電極交錯排列於引線架上，同一列中的各第一電極藉由位於其端部的一連接條縱向串接，同一列中的各第二電極藉由位於其端部的另一連接條縱向串接；在引線架上兩列相鄰連接條之間形成圍繞第一電極、第二電極設置的反射杯，該反射杯具有容納發光二極體封裝結構晶片的容置槽；切割外露於反射杯相對兩側的連接條，使得連接條分隔成複數相對獨立的連接段，每一連接段對應第一電極/第二電極設置，該連接段的寬度小於與其連接的第一電極/第二電極的寬度；在容置槽內設置發光二極體封裝結構晶片並電連接該第一電極、第二電極；在容置槽內形成覆蓋發光二極體封裝結構晶片的封裝層；以及橫向切割反射杯以形成多個獨立的發光二極體封裝結構。A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a lead frame provided with a plurality of columns of first electrodes and second electrodes, wherein the first electrodes and the second electrodes are staggered on the lead frame in the same column Each of the first electrodes is longitudinally connected in series by a connecting strip at the end thereof, and the second electrodes in the same column are longitudinally connected in series by another connecting strip at the end thereof; adjacent to the two columns on the lead frame Forming a reflective cup disposed around the first electrode and the second electrode, the reflective cup having a receiving groove for accommodating the LED of the light emitting diode package structure; cutting the connecting strip exposed on opposite sides of the reflective cup, so that the connecting strip Separating into a plurality of relatively independent connecting segments, each connecting segment is disposed corresponding to the first electrode/second electrode, the width of the connecting segment is smaller than the width of the first electrode/second electrode connected thereto; and the light emitting diode is disposed in the receiving groove a polar package structure wafer and electrically connecting the first electrode and the second electrode; forming an encapsulation layer covering the LED of the LED package structure in the accommodating groove; and laterally cutting the reflective cup to form a plurality of independent A light emitting diode package structure.

一種發光二極體封裝結構，包括一對間隔設置的第一電極和第二電極、分別與第一電極和第二電極電連接的發光二極體封裝結構晶片以及圍繞發光二極體封裝結構晶片設置的反射杯，反射杯具有一容納發光二極體封裝結構晶片的容置槽，該發光二極體封裝結構還包括從該第一電極遠離第二電極的一端向外繼而向下一體延伸的連接段和第二電極遠離第一電極的一端向外繼而向下一體延伸的連接段，該第一電極上的連接段的寬度小於第一電極的寬度，該第二電極上的連接段的寬度小於第二電極的寬度，該第一電極和第二電極嵌置於反射杯內，該第一電極的連接段及第二電極的連接段分別外露於反射杯的相對兩側。A light emitting diode package structure comprising a pair of spaced apart first and second electrodes, a light emitting diode package structure wafer electrically connected to the first electrode and the second electrode, respectively, and a wafer surrounding the light emitting diode package structure a reflective cup having a receiving groove for accommodating the LED of the light emitting diode package structure, the light emitting diode package further comprising an outer end extending downward from the first electrode away from the second electrode a connecting section of the connecting section and the second electrode extending away from the one end of the first electrode and extending downwardly, the width of the connecting section on the first electrode is smaller than the width of the first electrode, and the width of the connecting section on the second electrode The first electrode and the second electrode are embedded in the reflective cup, and the connecting portion of the first electrode and the connecting portion of the second electrode are respectively exposed on opposite sides of the reflective cup.

與習知技藝相比，本方法係在反射杯成型後再對外露其兩側連接條進行切割以形成多個連接段，而第一電極、第二電極嵌置於反射杯內，這能有效提升發光二極體封裝結構的密合度。Compared with the prior art, the method is characterized in that after the reflective cup is formed, the connecting strips on both sides of the reflective cup are cut to form a plurality of connecting segments, and the first electrode and the second electrode are embedded in the reflecting cup, which can effectively Improve the adhesion of the LED package structure.

圖1係本發明一實施例的發光二極體封裝結構100的製造方法流程圖，請同時參閱圖1至圖21，該發光二極體封裝結構100的製造方法包括如下步驟：1 is a flow chart of a method for fabricating a light emitting diode package structure 100 according to an embodiment of the present invention. Referring to FIG. 1 to FIG. 21 simultaneously, the method for manufacturing the LED package structure 100 includes the following steps:

步驟S101，請同時參閱圖2至圖5，提供一裝設有多列第一電極10、第二電極20的引線架50，所述第一電極10、第二電極20交錯排列於引線架50上，同一列中的各第一電極10藉由位於其一端的連接條30縱向串接，同一列中的各第二電極20藉由位於其一端的連接條31縱向串接。Step S101, please refer to FIG. 2 to FIG. 5 simultaneously, and provide a lead frame 50 with a plurality of rows of first electrodes 10 and second electrodes 20, and the first electrodes 10 and the second electrodes 20 are staggered on the lead frame 50. The first electrodes 10 in the same column are vertically connected in series by the connecting strips 30 at one end thereof, and the second electrodes 20 in the same column are longitudinally connected in series by the connecting strips 31 at one end thereof.

該引線架50上還設有延展性能較好的複數金屬細線（未標示），該金屬細線用於將所述第一電極10和第二電極20分別固定於引線架50上並為該第一電極10和第二電極20提供必要的支撐力。The lead frame 50 is further provided with a plurality of metal thin wires (not labeled) having good ductility, and the metal thin wires are used for fixing the first electrode 10 and the second electrode 20 to the lead frame 50 respectively. The electrode 10 and the second electrode 20 provide the necessary supporting force.

該第一電極10包括相對設置的上表面101和下表面102。該第一電極10上開設有貫穿其上表面101和下表面102的至少一導孔103。該第二電極20包括相對設置的上表面201和下表面202。該第二電極20上開設有貫穿其上表面201和下表面202的至少一導孔203。The first electrode 10 includes an upper surface 101 and a lower surface 102 that are oppositely disposed. The first electrode 10 is provided with at least one via hole 103 penetrating the upper surface 101 and the lower surface 102 thereof. The second electrode 20 includes an upper surface 201 and a lower surface 202 that are disposed opposite each other. The second electrode 20 is provided with at least one guiding hole 203 extending through the upper surface 201 and the lower surface 202 thereof.

同一列中的各第一電極10位於該連接條30的同一側，同一列中的各第二電極20位於該連接條31的同一側。該連接條30、31的厚度（即沿垂直於第一電極10和第二電極20的上下表面方向上的厚度）大於第一電極10、第二電極20的厚度。該連接條30、31均包括相對設置的上下表面（未標示）。該連接條30的上表面與同一列中的各第一電極10的上表面101平齊，該連接條31的上表面與同一列中的各第二電極20的上表面201平齊。該連接條30的下表面遠離同一列中的各第一電極10的下表面102設置，該連接條31的下表面遠離同一列中的各第二電極20的下表面202設置。Each of the first electrodes 10 in the same column is located on the same side of the connecting strip 30, and each of the second electrodes 20 in the same column is located on the same side of the connecting strip 31. The thickness of the connecting strips 30, 31 (i.e., the thickness in the direction perpendicular to the upper and lower surfaces of the first electrode 10 and the second electrode 20) is greater than the thickness of the first electrode 10 and the second electrode 20. The connecting strips 30, 31 each include oppositely disposed upper and lower surfaces (not labeled). The upper surface of the connecting strip 30 is flush with the upper surface 101 of each of the first electrodes 10 in the same column, and the upper surface of the connecting strip 31 is flush with the upper surface 201 of each of the second electrodes 20 in the same column. The lower surface of the connecting strip 30 is disposed away from the lower surface 102 of each of the first electrodes 10 in the same column, and the lower surface of the connecting strip 31 is disposed away from the lower surface 202 of each of the second electrodes 20 in the same column.

該第一電極10的下表面102、第二電極20的下表面202還進一步分別向下凸出延伸形成第一增厚部1022、第二增厚部2022。該第一增厚部1022和第二增厚部2022分別自第一電極10和第二電極20內側相對的兩端垂直向下延伸而出。該第一增厚部1022、第二增厚部2022的寬度（沿連接條30、31的延伸方向上的寬度，即縱向的寬度）分別小於其對應的第一電極10、第二電極20的寬度。The lower surface 102 of the first electrode 10 and the lower surface 202 of the second electrode 20 further extend downwardly to form a first thickened portion 1022 and a second thickened portion 2022, respectively. The first thickened portion 1022 and the second thickened portion 2022 extend vertically downward from opposite ends of the inner side of the first electrode 10 and the second electrode 20, respectively. The widths of the first thickening portion 1022 and the second thickening portion 2022 (the width in the extending direction of the connecting strips 30, 31, that is, the width in the longitudinal direction) are smaller than the corresponding first electrode 10 and second electrode 20, respectively. width.

該第一增厚部1022的遠離對應第一電極10的底面（未標示）與該連接條30的下表面平齊。該第二增厚部2022的遠離對應第二電極20的底面（未標示）與該連接條31的下表面平齊。The bottom surface (not labeled) of the first thickened portion 1022 away from the corresponding first electrode 10 is flush with the lower surface of the connecting strip 30. The bottom surface (not labeled) of the second thickened portion 2022 away from the corresponding second electrode 20 is flush with the lower surface of the connecting strip 31.

相鄰的第一電極10和第二電極20之間形成一溝槽40用以絕緣性阻斷該第一電極10和第二電極20。該第一電極10的第一增厚部1022與連接條30共同圍設形成一通槽105，該第二電極20的第二增厚部2022與連接條31共同圍設形成一通槽205。該通槽105、205的頂端分別與導孔103、203連通。該溝槽40分別與通槽105、205橫向（沿第一電極10、第二電極20的延伸方向）連通。A trench 40 is formed between the adjacent first electrode 10 and the second electrode 20 for insulatingly blocking the first electrode 10 and the second electrode 20. The first thickening portion 1022 of the first electrode 10 and the connecting strip 30 are disposed together to form a through groove 105. The second thickening portion 2022 of the second electrode 20 and the connecting strip 31 are enclosed to form a through groove 205. The top ends of the through grooves 105 and 205 communicate with the guide holes 103 and 203, respectively. The trenches 40 are in communication with the vias 105, 205 (in the direction in which the first electrodes 10 and the second electrodes 20 extend).

步驟S102，請一併參閱圖8至圖11，在引線架50上兩列相鄰連接條30、31之間形成圍繞第一電極10、第二電極20設置的反射杯70。該反射杯70具有容納發光二極體封裝結構晶片80的容置槽71。In step S102, referring to FIG. 8 to FIG. 11, a reflective cup 70 disposed around the first electrode 10 and the second electrode 20 is formed between the two adjacent connecting strips 30, 31 on the lead frame 50. The reflector cup 70 has a receiving groove 71 for accommodating the LED package 80 of the LED package.

該容置槽71形成於該第一電極10的上表面101和第二電極20的上表面201上並向上貫穿該反射杯70。該第一電極10的上表面101的一部分和該第二電極20上表面201的一部分外露於該容置槽71的底部。所述第一增厚部1022和第二增厚部2022與該容置槽71分別位於該第一電極10和第二電極20的相對兩側，且該第一增厚部1022和第二增厚部2022與該容置槽71正對設置。The accommodating groove 71 is formed on the upper surface 101 of the first electrode 10 and the upper surface 201 of the second electrode 20 and penetrates the reflective cup 70 upward. A portion of the upper surface 101 of the first electrode 10 and a portion of the upper surface 201 of the second electrode 20 are exposed at the bottom of the accommodating groove 71. The first thickening portion 1022 and the second thickening portion 2022 and the accommodating groove 71 are respectively located on opposite sides of the first electrode 10 and the second electrode 20, and the first thickening portion 1022 and the second increasing portion The thick portion 2022 is disposed opposite to the accommodating groove 71.

該反射杯70成型之後，該第一增厚部1022遠離第一電極10的底面、第二增厚部2022的遠離第二電極20的底面分別外露於反射杯70的底部。After the reflector cup 70 is formed, the first thickened portion 1022 is away from the bottom surface of the first electrode 10 and the bottom surface of the second thickened portion 2022 away from the second electrode 20 is exposed at the bottom of the reflective cup 70.

請同時參考圖6至圖7，在本發明中該反射杯70成型於一模具60之中，該模具60包括相對設置的上模具61和下模具62。該上模具61和下模具62共同圍設出一收容該引線架50的密閉空間。該連接條30、31的上下表面均被上模具61和下模具62遮蓋。Referring to FIG. 6 to FIG. 7 simultaneously, in the present invention, the reflective cup 70 is molded into a mold 60 including an upper mold 61 and a lower mold 62 which are disposed opposite each other. The upper mold 61 and the lower mold 62 collectively enclose a sealed space for housing the lead frame 50. The upper and lower surfaces of the connecting strips 30, 31 are covered by the upper mold 61 and the lower mold 62.

該反射杯70的材質係環氧樹脂、矽樹脂、PPA（聚鄰苯二醯胺樹脂）等高分子化合物中的任一種，並藉由注塑的方式一體成型。The material of the reflector cup 70 is any one of a polymer compound such as epoxy resin, enamel resin, or PPA (polyphthalamide resin), and is integrally molded by injection molding.

該高分子化合物經過高溫加熱後變成熔融的流體。該流體經流道611流入模具內並沿第一增厚部1022、第二增厚部2022、導孔103、導孔203流動（請參看圖7），同時該流體被連接條30、31阻擋而在兩列相鄰連接條30、31之間流動以形成預設的反射杯70形狀。The polymer compound is heated to a molten fluid to become a molten fluid. The fluid flows into the mold through the flow path 611 and flows along the first thickened portion 1022, the second thickened portion 2022, the guide hole 103, and the guide hole 203 (refer to FIG. 7), and the fluid is blocked by the connecting strips 30, 31. Instead, it flows between two adjacent rows of connecting strips 30, 31 to form a predetermined shape of the reflecting cup 70.

步驟S103，請同時參閱圖12至圖14，切割外露於反射杯70相對兩側的連接條30、31，使得連接條30分隔成複數相對獨立的連接段301，每一連接段301對應第一電極10設置，該連接段301的寬度（即沿連接條30、31的延伸方向上的寬度，即縱向的寬度）小於與其連接的第一電極10的寬度；連接條31分隔成複數相對獨立的連接段311，每一連接段311對應第二電極20設置，該連接段311的寬度（沿連接條30、31的延伸方向上的寬度，即縱向的寬度）小於與其連接的第二電極20的寬度。Step S103, please refer to FIG. 12 to FIG. 14 at the same time, and cut the connecting strips 30, 31 exposed on opposite sides of the reflecting cup 70, so that the connecting strip 30 is divided into a plurality of relatively independent connecting segments 301, and each connecting segment 301 corresponds to the first The electrode 10 is disposed such that the width of the connecting portion 301 (i.e., the width along the extending direction of the connecting strips 30, 31, that is, the width in the longitudinal direction) is smaller than the width of the first electrode 10 connected thereto; the connecting strip 31 is divided into a plurality of relatively independent Connecting segments 311, each connecting segment 311 is disposed corresponding to the second electrode 20, and the width of the connecting segment 311 (the width along the extending direction of the connecting strips 30, 31, that is, the width in the longitudinal direction) is smaller than that of the second electrode 20 connected thereto width.

在本實施例中利用切刀對連接條30、31進行切割以將該連接條30、31分割成複數相對獨立的連接段301、311。在其他實施例中還可以利用鐳射雕刻的方式對連接條30、31進行切割。In the present embodiment, the connecting bars 30, 31 are cut by a cutter to divide the connecting bars 30, 31 into a plurality of relatively independent connecting segments 301, 311. In other embodiments, the connecting strips 30, 31 can also be cut by means of laser engraving.

另，在本發明中在切割連接條30、31步驟之後，還可在外露於容置槽71的底部的第一電極10和第二電極20以及外露於反射杯70兩側的連接段301、302的表面上製作一金屬層以防止外露的第一電極10、第二電極20和連接段301、311氧化。較佳地，該金屬層的材質係銀，並藉由電鍍的方式形成於外露的第一電極10、第二電極20和連接段301、302的表面上。In addition, in the present invention, after the step of cutting the connecting strips 30, 31, the first electrode 10 and the second electrode 20 exposed at the bottom of the receiving groove 71 and the connecting portion 301 exposed on both sides of the reflecting cup 70 may be further A metal layer is formed on the surface of 302 to prevent oxidation of the exposed first electrode 10, second electrode 20, and connection segments 301, 311. Preferably, the metal layer is made of silver and is formed by electroplating on the surfaces of the exposed first electrode 10, the second electrode 20 and the connecting segments 301, 302.

步驟S104，在容置槽71內設置發光二極體封裝結構晶片80並電連接所述第一電極10、第二電極20。In step S104, a light emitting diode package structure wafer 80 is disposed in the accommodating groove 71 and electrically connected to the first electrode 10 and the second electrode 20.

在該容置槽71內設置發光二極體封裝結構晶片80並藉由導線81、82分別連接至第一電極10和第二電極20。在本實施例中，該發光二極體封裝結構晶片80位於容置槽71的底部。具體地，該發光二極體封裝結構晶片80設置於第一電極10的上表面101上並藉由導線81、82分別與第一電極10和第二電極20電連接。可以理解地，在其他實施例中，該發光二極體封裝結構晶片80還可以藉由覆晶（Flip-Chip）的方式直接與第一電極10和第二電極20電連接。A light emitting diode package structure wafer 80 is disposed in the accommodating groove 71 and connected to the first electrode 10 and the second electrode 20 by wires 81 and 82, respectively. In this embodiment, the LED package structure 80 is located at the bottom of the accommodating groove 71. Specifically, the LED package structure 80 is disposed on the upper surface 101 of the first electrode 10 and electrically connected to the first electrode 10 and the second electrode 20 by wires 81 and 82, respectively. It can be understood that in other embodiments, the LED package 80 can be directly electrically connected to the first electrode 10 and the second electrode 20 by means of a flip-chip.

步驟S105，在容置槽71內形成覆蓋發光二極體封裝結構晶片80的封裝層90。 該封裝層90係矽膠、環氧樹脂或其他高分子材質中的一種。較佳地，該封裝層90還包含有螢光粉或光學擴散粉，以用於轉換或漫射該發光二極體封裝結構晶片80發出的光線。In step S105, an encapsulation layer 90 covering the LED package 80 of the LED package is formed in the accommodating groove 71. The encapsulation layer 90 is one of silicone, epoxy or other polymer materials. Preferably, the encapsulation layer 90 further comprises a phosphor powder or an optical diffusion powder for converting or diffusing the light emitted by the LED package 80.

步驟S106，請參考圖15，橫向切割反射杯70以形成多個獨立的發光二極體封裝結構100。該發光二極體封裝結構100的第一電極10、第二電極20嵌置於反射杯70內，該連接段301、311分別外露於反射杯70的相對兩側。Step S106, referring to FIG. 15, the reflective cup 70 is laterally cut to form a plurality of independent light emitting diode package structures 100. The first electrode 10 and the second electrode 20 of the LED package 100 are embedded in the reflective cup 70. The connecting segments 301 and 311 are respectively exposed on opposite sides of the reflective cup 70.

可以理解地，在步驟S102中成型反射杯70a時，該連接條30a、31a的上表面部分被上模具61遮蓋同時還有一部分上表面暴露於上模具61和下模具62圍設的空間內。請同時參考圖16至圖18，當反射杯70a成型後，該連接條30a、31a未被上模具61遮蓋的部分被反射杯70a覆蓋。請參考圖19至圖21，在接下來的步驟S03中切割連接條30a、31a時，切刀沿著反射杯70a的端部邊緣對連接條30a、31a進行切割，該連接條30a、31a上表面被反射杯70a覆蓋的部分未被切割，切割之後該連接條30a、31a被分割成複數相對獨立的連接段301a、311a。每一連接段301a、311a的寬度小於與其對應連接的第一電極10a或第二電極20a的寬度。每一連接段301a、311a的下表面外露出反射杯70a底部的部分呈“凸”字形（請參考圖21）。It is understood that when the reflecting cup 70a is molded in step S102, the upper surface portion of the connecting strips 30a, 31a is covered by the upper mold 61 while a part of the upper surface is exposed to the space enclosed by the upper mold 61 and the lower mold 62. Referring to FIGS. 16 to 18 simultaneously, when the reflective cup 70a is molded, the portion of the connecting strip 30a, 31a that is not covered by the upper mold 61 is covered by the reflective cup 70a. Referring to FIG. 19 to FIG. 21, when the connecting strips 30a, 31a are cut in the next step S03, the cutter cuts the connecting strips 30a, 31a along the end edges of the reflecting cup 70a, and the connecting strips 30a, 31a are cut. The portion of the surface covered by the reflecting cup 70a is not cut, and after the cutting, the connecting strips 30a, 31a are divided into a plurality of relatively independent connecting segments 301a, 311a. The width of each of the connecting segments 301a, 311a is smaller than the width of the first electrode 10a or the second electrode 20a to which the corresponding connection is made. The portion of the lower surface of each of the connecting segments 301a, 311a that exposes the bottom of the reflecting cup 70a has a "convex" shape (please refer to FIG. 21).

在本發明中，由發光二極體封裝結構的製造方法所得的發光二極體封裝結構100既可以作為側面發光型發光二極體封裝結構也可以作為頂部發光型發光二極體封裝結構使用。當該發光二極體封裝結構100作為側面發光型發光二極體封裝結構使用並安裝於電路板（圖未示）上時，該發光二極體封裝結構100藉由連接段301、301a和連接段311、311a與外部電路連接；當發光二極體封裝結構100作為頂部發光型發光二極體封裝結構使用時，該發光二極體封裝結構100藉由其第一增厚部1022和第二增厚部2022的底面與外部電路結構電連接。In the present invention, the LED package structure 100 obtained by the method of manufacturing the LED package structure can be used as a side-emitting type LED package structure or as a top-emission type LED package structure. When the LED package structure 100 is used as a side-emitting LED package structure and mounted on a circuit board (not shown), the LED package 100 is connected by connecting segments 301, 301a and The segments 311 and 311a are connected to an external circuit. When the LED package structure 100 is used as a top emission type LED package structure, the LED package structure 100 has a first thickening portion 1022 and a second portion thereof. The bottom surface of the thickened portion 2022 is electrically connected to an external circuit structure.

在本發明中，該反射杯70係藉由注塑的方式一體成型並圍繞第一電極10和第二電極20設置。與習知技藝相比，本方法在成型反射杯70時連接條30、連接條31被上模具61遮蓋，反射杯70成型後再對位於其兩側的連接條30、31分別進行切割以形成複數相對獨立的連接段301、311，而第一電極10、第二電極20嵌置於反射杯70內這能有效提升發光二極體封裝結構100的密合度，同時這種製造方法適合批量製作發光二極體封裝結構100，能有效提高生產效率。In the present invention, the reflecting cup 70 is integrally molded by injection molding and disposed around the first electrode 10 and the second electrode 20. Compared with the prior art, the connecting strip 30 and the connecting strip 31 are covered by the upper mold 61 when the reflecting cup 70 is formed. After the reflecting cup 70 is formed, the connecting strips 30 and 31 on both sides thereof are respectively cut to form. The plurality of relatively independent connecting segments 301, 311, and the first electrode 10 and the second electrode 20 are embedded in the reflective cup 70, which can effectively improve the tightness of the LED package structure 100, and the manufacturing method is suitable for batch production. The LED package structure 100 can effectively improve production efficiency.

其次，該第一增厚部1022、第二增厚部2022能增加該反射杯70與第一電極10、第二電極20的結合強度，該導孔103、203內卡榫有形成反射杯70的高分子化合物，亦能增加該反射杯70與第一電極10、第二電極20的結合強度。The first thickening portion 1022 and the second thickening portion 2022 can increase the bonding strength between the reflective cup 70 and the first electrode 10 and the second electrode 20. The guiding holes 103 and 203 are formed with the reflecting cup 70. The polymer compound can also increase the bonding strength of the reflector cup 70 to the first electrode 10 and the second electrode 20.

另，在本發明中成型反射杯70時，該第一增厚部1022和第二增厚部2022的底面分別外露於反射杯70的底部，發光二極體封裝結構晶片80工作時產生的熱量能藉由第一增厚部1022的底面和第二增厚部2022的底面散發到空氣之中，從而有效提升該發光二極體封裝結構100的散熱效率。In addition, when the reflective cup 70 is formed in the present invention, the bottom surfaces of the first thickened portion 1022 and the second thickened portion 2022 are exposed at the bottom of the reflective cup 70, respectively, and the heat generated when the light emitting diode package structure wafer 80 is operated. The bottom surface of the first thickened portion 1022 and the bottom surface of the second thickened portion 2022 can be dissipated into the air, thereby effectively improving the heat dissipation efficiency of the light emitting diode package structure 100.

綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施方式，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100．．．發光二極體封裝結構100. . . Light emitting diode package structure

10、10a．．．第一電極10, 10a. . . First electrode

101、201．．．上表面101, 201. . . Upper surface

102、202．．．下表面102, 202. . . lower surface

103、203．．．導孔103, 203. . . Guide hole

1022、1022a．．．第一增厚部1022, 1022a. . . First thickening

105、205．．．通槽105, 205. . . Passage

20、20a．．．第二電極20, 20a. . . Second electrode

2022、2022a．．．第二增厚部2022, 2022a. . . Second thickening

30、31、30a、31a．．．連接條30, 31, 30a, 31a. . . Connecting strip

301、311、301a、311a．．．連接段301, 311, 301a, 311a. . . Connection segment

40．．．溝槽40. . . Trench

50．．．引線架50. . . Lead frame

60．．．模具60. . . Mold

61．．．上模具61. . . Upper mold

611．．．流道611. . . Runner

62．．．下模具62. . . Lower mold

70、70a．．．反射杯70, 70a. . . Reflective cup

71、71a．．．容置槽71, 71a. . . Locating slot

80．．．發光二極體封裝結構晶片80. . . Light-emitting diode package structure wafer

81、82．．．導線81, 82. . . wire

90．．．封裝層90. . . Encapsulation layer

圖1係本發明一實施例的發光二極體封裝結構的製造方法流程圖。1 is a flow chart showing a method of manufacturing a light emitting diode package structure according to an embodiment of the present invention.

圖2係圖1中所示發光二極體封裝結構的製造方法步驟S101所得的引線架的俯視示意圖。FIG. 2 is a schematic top plan view of the lead frame obtained in step S101 of the manufacturing method of the light emitting diode package structure shown in FIG. 1.

圖3係圖2所示引線架中第一電極、第二電極的俯視示意圖。3 is a top plan view of the first electrode and the second electrode in the lead frame shown in FIG. 2.

圖4係圖3所示第一電極和第二電極沿IV-IV線的剖面示意圖。4 is a schematic cross-sectional view of the first electrode and the second electrode shown in FIG. 3 taken along line IV-IV.

圖5係圖3所示第一電極和第二電極的仰視示意圖。Figure 5 is a bottom plan view of the first electrode and the second electrode shown in Figure 3.

圖6係圖1中引線架放置於模具內的剖面示意圖。Figure 6 is a schematic cross-sectional view showing the lead frame of Figure 1 placed in a mold.

圖7係圖1中引線架放置於模具內的仰視示意圖（下模具的底部被隱藏）。Figure 7 is a bottom plan view of the lead frame of Figure 1 placed in a mold (the bottom of the lower mold is hidden).

圖8係圖1中所示發光二極體封裝結構的製造方法步驟S102所得的引線架上形成反射杯後的俯視示意圖。FIG. 8 is a top plan view showing the reflective cup formed on the lead frame obtained by the step S102 of the method for manufacturing the light emitting diode package structure shown in FIG.

圖9係圖8所示引線架上形成反射杯後第一電極和第二電極的俯視示意圖。9 is a top plan view showing the first electrode and the second electrode after forming a reflective cup on the lead frame shown in FIG.

圖10係圖9所示第一電極和第二電極沿X-X線的剖面示意圖。Figure 10 is a cross-sectional view of the first electrode and the second electrode shown in Figure 9 taken along the line X-X.

圖11係圖9所示第一電極和第二電極的仰視示意圖。Figure 11 is a bottom plan view showing the first electrode and the second electrode shown in Figure 9.

圖12係圖1中所示發光二極體封裝結構的製造方法步驟S103所得的切割連接條形成連接段之後的第一電極、第二電極的俯視示意圖。FIG. 12 is a top plan view showing the first electrode and the second electrode after the dicing connecting strip obtained in step S103 of the manufacturing method of the illuminating diode package structure shown in FIG.

圖13係圖12所示第一電極和第二電極沿XIII-XIII線的剖面示意圖。Figure 13 is a schematic cross-sectional view of the first electrode and the second electrode shown in Figure 12 taken along the line XIII-XIII.

圖14係圖12所示第一電極和第二電極的仰視示意圖。Figure 14 is a bottom plan view showing the first electrode and the second electrode shown in Figure 12.

圖15係圖1中所示發光二極體封裝結構的製造方法步驟S106所得的獨立發光二極體封裝結構的剖面示意圖。FIG. 15 is a cross-sectional view showing the independent light emitting diode package structure obtained in step S106 of the method for fabricating the light emitting diode package structure shown in FIG. 1.

圖16係圖1中所示發光二極體封裝結構的製造方法步驟S102的另一實施例中在引線架上形成反射杯後第一電極和第二電極的俯視示意圖。16 is a top plan view showing the first electrode and the second electrode after forming a reflective cup on the lead frame in another embodiment of the manufacturing method of the light emitting diode package structure shown in FIG.

圖17係圖16中第一電極和第二電極沿XVII-XVII線的剖面示意圖。Figure 17 is a schematic cross-sectional view of the first electrode and the second electrode taken along line XVII-XVII of Figure 16.

圖18係圖16所示第一電極和第二電極的仰視示意圖。Figure 18 is a bottom plan view showing the first electrode and the second electrode shown in Figure 16.

圖19係圖1中所示發光二極體封裝結構的製造方法步驟S103的另一實施例中在切割連接條形成連接段之後第一電極和第二電極的俯視示意圖。FIG. 19 is a top plan view showing the first electrode and the second electrode after the cutting connecting strip forms the connecting section in another embodiment of the manufacturing method of the light emitting diode package structure shown in FIG.

圖20係圖19中第一電極和第二電極沿XX-XX線的剖面示意圖。Figure 20 is a cross-sectional view of the first electrode and the second electrode taken along line XX-XX of Figure 19.

圖21係圖19所示第一電極和第二電極的仰視示意圖。Figure 21 is a bottom plan view showing the first electrode and the second electrode shown in Figure 19.

Claims (11)

一種發光二極體封裝結構的製造方法，包括以下步驟：
提供裝設有多列第一電極和第二電極的引線架，該第一電極、第二電極交錯排列於引線架上，同一列中的各第一電極藉由位於其端部的一連接條縱向串接，同一列中的各第二電極藉由位於其端部的另一連接條縱向串接；
在引線架上兩列相鄰連接條之間形成圍繞第一電極、第二電極設置的反射杯，該反射杯具有容納發光二極體封裝結構晶片的容置槽；
切割外露於反射杯相對兩側的連接條，使得連接條分隔成複數相對獨立的連接段，每一連接段對應第一電極/第二電極設置，該連接段的寬度小於與其連接的第一電極/第二電極的寬度；
在容置槽內設置發光二極體封裝結構晶片並電連接該第一電極、第二電極；
在容置槽內形成覆蓋發光二極體封裝結構晶片的封裝層；以及
橫向切割反射杯以形成多個獨立的發光二極體封裝結構。A method of manufacturing a light emitting diode package structure, comprising the steps of:
Providing a lead frame provided with a plurality of rows of first electrodes and second electrodes, the first electrodes and the second electrodes are staggered on the lead frame, and each of the first electrodes in the same column is connected by a connecting strip at an end thereof Longitudinally connected in series, each of the second electrodes in the same column is longitudinally connected in series by another connecting strip at the end thereof;
Forming a reflective cup disposed around the first electrode and the second electrode between the two adjacent rows of the lead frame, the reflective cup having a receiving groove for accommodating the LED of the light emitting diode package structure;
Cutting the connecting strips exposed on opposite sides of the reflecting cup, so that the connecting strip is divided into a plurality of relatively independent connecting segments, each connecting segment is disposed corresponding to the first electrode/second electrode, and the connecting segment has a width smaller than the first electrode connected thereto / width of the second electrode;
Providing a light emitting diode package structure wafer in the accommodating groove and electrically connecting the first electrode and the second electrode;
Forming an encapsulation layer covering the LED of the light emitting diode package structure in the accommodating groove; and laterally cutting the reflective cup to form a plurality of independent light emitting diode package structures. 如申請專利範圍第1項所述的發光二極體封裝結構的製造方法，其中該相鄰的第一電極和第二電極之間形成溝槽以絕緣性阻斷該第一電極和第二電極，該第一電極以及與第一電極對應的連接條、該第二電極以及與第二電極對應的連接條分別圍設出一通槽，該第一電極、第二電極之間的溝槽分別與該通槽橫向連通。The method for manufacturing a light emitting diode package structure according to claim 1, wherein a trench is formed between the adjacent first electrode and the second electrode to insulate the first electrode and the second electrode in an insulating manner. The first electrode and the connecting strip corresponding to the first electrode, the second electrode and the connecting strip corresponding to the second electrode respectively define a through groove, and the groove between the first electrode and the second electrode respectively The through slots are laterally connected. 如申請專利範圍第1項所述的發光二極體封裝結構的製造方法，其中在設置發光二極體封裝結構晶片之前該製造方法還包括對外露於容置槽底部的第一電極和第二電極以及外露於反射杯兩側的連接段的表面上製作一金屬層的步驟，以防止外露的第一電極、第二電極和連接段氧化。The manufacturing method of the light emitting diode package structure according to claim 1, wherein the manufacturing method further comprises a first electrode and a second exposed to the bottom of the receiving groove before the light emitting diode package structure wafer is disposed. A step of forming a metal layer on the surface of the electrode and the connecting portion exposed on both sides of the reflecting cup to prevent oxidation of the exposed first electrode, the second electrode and the connecting portion. 如申請專利範圍第3項所述的發光二極體封裝結構的製造方法，其中該金屬層的材料係銀，該金屬層藉由電鍍的方式形成於外露的第一電極、第二電極和連接段的外表面。The method for manufacturing a light emitting diode package structure according to claim 3, wherein the material of the metal layer is silver, and the metal layer is formed by plating on the exposed first electrode, the second electrode and the connection. The outer surface of the segment. 如申請專利範圍第1-4項中任意一項所述的發光二極體封裝結構的製造方法，其中該第一電極和第二電極均包括相對設置的上表面和下表面，該第一電極的下表面和第二電極的下表面分別向下凸出延伸形成增厚部，在反射杯成型後該第一電極上的增厚部遠離第一電極的外表面外露於反射杯外，該第二電極上的增厚部遠離第二電極的外表面外露於反射杯外。The manufacturing method of the light emitting diode package structure according to any one of claims 1 to 4, wherein the first electrode and the second electrode each comprise an opposite upper surface and a lower surface, the first electrode The lower surface and the lower surface of the second electrode respectively protrude downward to form a thickening portion, and after the reflective cup is formed, the thickened portion on the first electrode is exposed away from the outer surface of the first electrode and is exposed outside the reflective cup. The thickened portion on the two electrodes is exposed outside the reflective cup away from the outer surface of the second electrode. 如申請專利範圍第5項所述的發光二極體封裝結構的製造方法，其中第一電極的上表面和第二電極的上表面暴露於該反射杯的容置槽內，該第一電極的增厚部形成於第一電極的下表面上，第二電極的增厚部形成於第二電極的下表面上。The manufacturing method of the light emitting diode package structure according to claim 5, wherein the upper surface of the first electrode and the upper surface of the second electrode are exposed in the receiving groove of the reflective cup, the first electrode The thickened portion is formed on the lower surface of the first electrode, and the thickened portion of the second electrode is formed on the lower surface of the second electrode. 如申請專利範圍第5項所述的發光二極體封裝結構的製造方法，其中該第一電極上開設貫穿第一電極上下表面的至少一導孔，第二電極上開設貫穿第二電極上下表面的至少一導孔。The method of manufacturing the LED package of claim 5, wherein the first electrode has at least one via hole penetrating through the upper and lower surfaces of the first electrode, and the second electrode is formed through the upper and lower surfaces of the second electrode. At least one guide hole. 如申請專利範圍第5項所述的發光二極體封裝結構的製造方法，其中該反射杯的材質係高分子化合物，並藉由注塑成型方式一體製造。The method for manufacturing a light-emitting diode package structure according to claim 5, wherein the material of the reflector cup is a polymer compound and is integrally manufactured by injection molding. 如申請專利範圍第8項所述的發光二極體封裝結構的製造方法，其中該反射杯成型於一模具之中，該模具包括相對設置的上模具和下模具，該上模具和下模具共同圍設出收容引線架的密閉空間，該高分子化合物經過加熱後變成熔融的流體，該流體被注入模具內引線架上的兩列相鄰連接條之間並沿第一電極和第二電極的增厚部流動以形成該反射杯。The manufacturing method of the light emitting diode package structure according to claim 8, wherein the reflective cup is formed in a mold, the mold includes an upper mold and a lower mold which are oppositely disposed, and the upper mold and the lower mold are common Enclosing a sealed space for accommodating the lead frame, the polymer compound is heated to become a molten fluid, and the fluid is injected between two adjacent rows of connecting strips on the lead frame of the mold and along the first electrode and the second electrode The thickened portion flows to form the reflective cup. 如申請專利範圍第9項所述的發光二極體封裝結構的製造方法，其中該連接條包括相對設置的上表面和下表面，該連接條的下表面被下模具遮蓋，該連接條的上表面部分被上模具遮蓋，在反射杯成型之後該連接條上表面未被上模具遮蓋的部分被反射杯覆蓋。The manufacturing method of the light emitting diode package structure according to claim 9, wherein the connecting strip includes opposite upper and lower surfaces, and a lower surface of the connecting strip is covered by a lower mold, the connecting strip is upper The surface portion is covered by the upper mold, and the portion of the upper surface of the connecting strip that is not covered by the upper mold after the reflective cup is formed is covered by the reflective cup. 一種發光二極體封裝結構，包括一對間隔設置的第一電極和第二電極、分別與第一電極和第二電極電連接的發光二極體封裝結構晶片以及圍繞發光二極體封裝結構晶片設置的反射杯，反射杯具有一容納發光二極體封裝結構晶片的容置槽，其改良在於：該發光二極體封裝結構還包括從該第一電極遠離第二電極的一端向外繼而向下一體延伸的連接段和第二電極遠離第一電極的一端向外繼而向下一體延伸的連接段，該第一電極上的連接段的寬度小於第一電極的寬度，該第二電極上的連接段的寬度小於第二電極的寬度，該第一電極和第二電極嵌置於反射杯內，該第一電極的連接段及第二電極的連接段分別外露於反射杯的相對兩側。A light emitting diode package structure comprising a pair of spaced apart first and second electrodes, a light emitting diode package structure wafer electrically connected to the first electrode and the second electrode, respectively, and a wafer surrounding the light emitting diode package structure a reflecting cup having a receiving groove for accommodating the LED of the light emitting diode package structure, wherein the light emitting diode package structure further comprises an end from the end of the first electrode away from the second electrode a connecting portion of the lower integrally extending connecting portion and the second electrode extending away from the one end of the first electrode and extending downwardly, the connecting portion on the first electrode has a width smaller than a width of the first electrode, and the second electrode is on the second electrode The width of the connecting portion is smaller than the width of the second electrode. The first electrode and the second electrode are embedded in the reflective cup, and the connecting portion of the first electrode and the connecting portion of the second electrode are respectively exposed on opposite sides of the reflective cup.
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