TW201424900A - Method for the production of hollow bodies, in particular of coolers, hollow bodies, and electric or electronic modules containing coolers - Google Patents

Method for the production of hollow bodies, in particular of coolers, hollow bodies, and electric or electronic modules containing coolers Download PDF

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TW201424900A
TW201424900A TW102128974A TW102128974A TW201424900A TW 201424900 A TW201424900 A TW 201424900A TW 102128974 A TW102128974 A TW 102128974A TW 102128974 A TW102128974 A TW 102128974A TW 201424900 A TW201424900 A TW 201424900A
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layer
metal
sintered
sintering
layers
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Juergen Schulz-Harder
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Curamik Electronics Gmbh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A method for the production of hollow bodies, in particular of coolers, having at least two metal layers, which are arranged by stacking to form a stack and are joined to each other by means of at least one joining or bonding layer, and having at least one cavity, which is formed inside the stack and is produced by structuring at least one metal layer, wherein a layer consisting of a bonding material is applied to at least one of the surface sides of the metal layers neighbouring each other within the stack before stacking and is transformed into the bonding layer joining the metal layers after stacking.

Description

生產中空體尤其是冷卻器的方法、中空體及含冷卻器的電或電子模組 Method for producing hollow bodies, especially coolers, hollow bodies and electrical or electronic modules containing coolers

本發明相關於依據專利請求項1的前言的生產中空體的方法，及，依據專利請求項19的前言的中空體，更明確地說，冷卻器及專利請求項20的前言的模組。 The present invention relates to a method of producing a hollow body according to the preamble of Patent Request 1, and a hollow body according to the preamble of Patent Request 19, more specifically, a cooler and a module of the preamble of Patent Request 20.

已知稱為“DCB法”(直接銅黏結技術)係被已知為例如使用金屬或銅片材或在其表面側上具有由金屬與較佳為氧的反應氣體的化學化合物構成的一層或塗覆層(熔融層)的金屬或銅箔，以彼此結合金屬層或片材(例如銅片材或箔)及/或結合至陶瓷或陶瓷層。以此例如描述於美國PS3744120或DE-PS2319854的方法，該層或塗覆(熔融層)形成具有低於該金屬(例如銅)的熔化溫度的熔化溫度的共晶系統，因此，該等層可以藉由將箔片放於陶瓷上並加熱所有層，藉由只有在熔融層或氧化層的區 域中實質熔融金屬或銅而彼此結合。 Known as the "DCB method" (direct copper bonding technique) is known, for example, using a metal or copper sheet or a layer having a chemical compound of a metal and a reactive gas of oxygen on the surface side thereof or The metal or copper foil of the coating layer (melting layer) is bonded to each other to a metal layer or sheet (for example, a copper sheet or foil) and/or to a ceramic or ceramic layer. Thus, for example, the method described in US Pat. No. 3,034,120 or DE-PS 23, 1985, the layer or coating (melting layer) forms a eutectic system having a melting temperature lower than the melting temperature of the metal (for example, copper), and therefore, the layers can By placing the foil on the ceramic and heating all layers, only in the area of the molten or oxide layer The domains are substantially molten metal or copper and bonded to each other.

此DCB法然後例如具有以下方法步驟：‧銅箔的氧化，使得產生一均勻銅氧化物層；‧將該銅箔置放於陶瓷層上；‧加熱該複合物至於大約1025及1083℃間之例如大約1071℃的處理溫度；‧冷卻至室溫。 The DCB process then has, for example, the following method steps: ‧ oxidation of the copper foil to produce a uniform layer of copper oxide; ‧ placing the copper foil on the ceramic layer; ‧ heating the composite to between about 1025 and 1083 ° C For example, a processing temperature of about 1071 ° C; ‧ cooling to room temperature.

類似於用以直接黏結銅至銅或銅至陶瓷的先前已知DCB方法，其他直接金屬黏結法或技術係為已知的，以此等方法金屬層或片材可以以類似方式大致彼此結合及/或結合至陶瓷或陶瓷層。DCB法或類似於此的方法係如下被稱為DMB法(直接金屬-黏結法)。 Similar to previously known DCB methods for directly bonding copper to copper or copper to ceramics, other direct metal bonding methods or techniques are known in which metal layers or sheets can be substantially bonded to each other in a similar manner and / or combined to a ceramic or ceramic layer. The DCB method or a method similar to this is referred to as the DMB method (direct metal-bonding method) as follows.

也已知稱為活性銲接法(DE2213115；EP-A-153618)例如結合金屬層或金屬箔，以形成金屬化塗覆，更明確是具有陶瓷材料的銅層或銅箔或鋁層或鋁箔。以此也可以用以特定地生產金屬/陶瓷基材的此方法，於例如銅箔的金屬箔與例如氮化鋁陶瓷之陶瓷基材間之結合係使用硬焊在大約800-1000℃間之溫度生產，其除了例如銅、銀及/或金的主要成份外，也包含活性金屬。此例如為群組Hf、Ti、Zr、Nb、Ce中的至少一元素的活性金屬藉由化學反應在銲料與陶瓷間產生一結合，同時，在該銲料與金屬間之結合為金屬硬焊結合。 Also known as active welding (DE 2213115; EP-A-153618), for example, in combination with a metal layer or a metal foil to form a metallized coating, more specifically a copper or copper foil or aluminum layer or aluminum foil with a ceramic material. This method can also be used to specifically produce a metal/ceramic substrate. The bonding between a metal foil such as a copper foil and a ceramic substrate such as an aluminum nitride ceramic is brazed between about 800 and 1000 ° C. Temperature production, which includes active metals in addition to the main components such as copper, silver and/or gold. For example, the active metal of at least one of the groups Hf, Ti, Zr, Nb, and Ce forms a bond between the solder and the ceramic by a chemical reaction, and at the same time, the bond between the solder and the metal is a metal brazing bond. .

也已知有以主動冷卻體或冷卻器形式的中空體，其冷卻體或冷卻器係由多數堆疊金屬層或金屬箔(堆 疊)構成，這些係藉由例如焊接、藉由擴散銲接或DMB法之結合或黏結而彼此結合。此作法的缺點之一為金屬層的整個堆疊必須被加熱至用以結合或黏結的高溫，並且，當擴散銲接時，也必須受到高壓，結果該等金屬層結構至少部份改變，特別是金屬層的硬度降低。再者，在很多情況下，無法防止例如焊料的黏結材料或在焊接結合時之共晶(Eutectic)熔融流入在堆疊內部中之金屬層中作成形成空腔或冷卻通道的開口及/或凹陷中，並阻擋該等開口或凹陷或由其所形成之空腔或冷卻通道。將以電鍍或其他方法所產生在金屬層或金屬箔上之抗蝕層不能在堆疊前被施加，因為該等層係為在結合或黏結時為作成合金所改變，因此，大致損失其保護作用。在結合後的抗蝕層的施用並不可能或不夠可能。未完成施用之抗蝕層甚至增加以在不同金屬間形成局部電元件的腐蝕。先前方法的另一缺點為長處理時間，這是由於結合所必須並為加熱及冷卻處理所造成。 Hollow bodies in the form of active cooling bodies or coolers are also known, the cooling bodies or coolers of which are composed of a plurality of stacked metal layers or metal foils (heap) Stacked, these are bonded to each other by, for example, soldering, bonding or bonding by diffusion bonding or DMB. One of the disadvantages of this approach is that the entire stack of metal layers must be heated to a high temperature for bonding or bonding, and also must be subjected to high pressures during diffusion welding, with the result that at least some of the metal layer structure changes, particularly metals. The hardness of the layer is lowered. Furthermore, in many cases, it is not possible to prevent the bonding material such as solder or the Eutectic melt in the welding bond from flowing into the openings and/or depressions forming the cavity or cooling passage in the metal layer in the interior of the stack. And blocking the openings or depressions or the cavity or cooling passage formed by them. A resist layer which is formed by electroplating or other methods on a metal layer or a metal foil cannot be applied before stacking because the layers are changed for alloying at the time of bonding or bonding, and therefore, the protective effect is substantially lost. . Application of the resist layer after bonding is not possible or possible. The unsuppressed applied resist layer even increases the corrosion to form local electrical components between different metals. Another disadvantage of the prior methods is the long processing time due to the necessity of bonding and the heating and cooling treatment.

本發明之目的為發現一種方法，其避免上述缺點並簡化由至少兩金屬層或金屬箔構成的中空體的生產，該等金屬層或金屬箔排列以形成堆疊並彼此結合。 It is an object of the present invention to find a method which avoids the above disadvantages and simplifies the production of hollow bodies composed of at least two metal layers or metal foils arranged to form a stack and bonded to each other.

為了完成此目的，一種方法係依據專利請求項1形成。一中空體，更明確地說，冷卻器形成專利請求項19的標的。具有此一冷卻器的模組形成了專利請求項 20的標的。 To accomplish this, a method is formed in accordance with Patent Request 1. A hollow body, more specifically, the cooler forms the subject of patent claim 19. The module with this cooler forms a patent claim 20 of the subject.

依據本發明之方法的基本優點包含：在結合或黏結時，只需對予以結合的材料，即，金屬層或金屬箔略微加熱。 The basic advantages of the method according to the invention include that only a combination of the material to be bonded, i.e., the metal layer or the metal foil, is slightly heated during bonding or bonding.

歸因於在結合或黏結處理時的略微加熱，對金屬層的材料特性並沒有改變或沒有重大改變。 Due to the slight heating at the bonding or bonding treatment, the material properties of the metal layer did not change or changed significantly.

結合金屬層或箔的黏結或結合層係為燒結所產生或為燒結層，在黏結處理時並沒有熔化製程產生，表示可以完成更細微結構。例如，因此有可能增加個別空腔的內表面積，因此，改良熱轉移。 The bonding or bonding layer of the bonding metal layer or foil is produced by sintering or is a sintered layer, and no melting process is produced during the bonding treatment, indicating that a finer structure can be completed. For example, it is therefore possible to increase the internal surface area of individual cavities and, therefore, improve heat transfer.

在結合之前，可以施用抗蝕層並且不會由於相對低燒結溫度改變其特性。 The resist layer can be applied prior to bonding and does not change its properties due to the relatively low sintering temperature.

燒結材料只在燒結壓力有效並且燒結電流流動的區域燒結。殘留或過量及未燒結的燒結材料可以在燒結後被洗出。 The sintered material is sintered only in a region where the sintering pressure is effective and the sintering current flows. The residual or excess and unsintered sintered material can be washed out after sintering.

減少之處理時間造成生產成本的相當大降低。 The reduced processing time results in a considerable reduction in production costs.

如果金屬層或金屬箔例如由銅或由銅合金構成，則由銅或銅合金構成的金屬粉末或包含此金屬粉末的材料係較佳為燒結材料。該燒結溫度然後遠低於銅或銅合金的熔點及金屬層與燒結材料的熔點。如果使用由鋁或鋁合金構成的金屬層及鋁或鋁合金構成金屬粉末形式的燒結材料或含有此金屬粉末的燒結材料，則相同情形也可以適用。在此時，燒結溫度也遠低於鋁或鋁合金的熔點及金屬層及燒結材料的熔點。 If the metal layer or the metal foil is composed of, for example, copper or a copper alloy, the metal powder composed of copper or a copper alloy or the material containing the metal powder is preferably a sintered material. The sintering temperature is then much lower than the melting point of the copper or copper alloy and the melting point of the metal layer and the sintered material. The same situation can also be applied if a metal layer composed of aluminum or an aluminum alloy and aluminum or an aluminum alloy are used to constitute a sintered material in the form of a metal powder or a sintered material containing the metal powder. At this time, the sintering temperature is also much lower than the melting point of the aluminum or aluminum alloy and the melting points of the metal layer and the sintered material.

遠較於傳統結合或黏結法簡化法被生產，特別當金屬層及由鋁或鋁合金構成的燒結材料被使用時，因為金屬層係被結合而不必真空或不必特殊助銲劑材料。 It is much easier to produce than the conventional bonding or bonding method, especially when a metal layer and a sintered material composed of aluminum or aluminum alloy are used, since the metal layer is bonded without vacuum or special flux material.

在本發明之意義內的“主動冷卻器”更明確為中空體，其空腔形成冷卻通道，通道包含熱傳遞媒體或冷卻媒體，或冷卻媒體流經冷卻通道。 An "active cooler" within the meaning of the present invention is more specifically a hollow body, the cavity of which forms a cooling passage, the passage comprising a heat transfer medium or a cooling medium, or a cooling medium flowing through the cooling passage.

在本發明意義內的用語“實質”或“大約”表示偏移開個別準確值+/-10%，較佳+/-5%，及/或對該功能不重要的變化的偏移。 The term "substantial" or "approximately" within the meaning of the present invention denotes an offset that is offset by an individual accurate value of +/- 10%, preferably +/- 5%, and/or a change that is not important to the function.

本發明之發展，優點及應用可以在以下例示實施例的說明及圖式中找到。所有所述及/或所示的特性基本上單獨或組合形成本發明之標的，而不管它們在申請專利範圍中如何總結或它們如何彼此表示。申請專利範圍的內容形成說明書的一部份。 Developments, advantages and applications of the present invention can be found in the description and drawings of the following exemplified embodiments. All of the described and/or illustrated features form the subject matter of the invention, either individually or in combination, regardless of how they are summarized in the scope of the patent application or how they are represented. The content of the patent application scope forms part of the specification.

1、1a-1c‧‧‧中空體 1, 1a-1c‧‧‧ hollow body

2-5‧‧‧金屬層 2-5‧‧‧metal layer

6-8‧‧‧燒結層 6-8‧‧‧Sintered layer

6.1-8.1‧‧‧燒結材料層 6.1-8.1‧‧‧Sintered material layer

9‧‧‧空腔 9‧‧‧ cavity

10‧‧‧開口 10‧‧‧ openings

11、12‧‧‧電極 11, 12‧‧‧ electrodes

13‧‧‧電流源 13‧‧‧current source

14、15‧‧‧金屬層 14, 15‧‧‧ metal layer

16‧‧‧空腔 16‧‧‧ cavity

17‧‧‧下凹 17‧‧‧ recessed

18‧‧‧燒結層 18‧‧‧Sintered layer

18.1‧‧‧燒結材料層 18.1‧‧‧Sintered material layer

19‧‧‧中間層 19‧‧‧Intermediate

20‧‧‧電或電子元件 20‧‧‧Electric or electronic components

本發明係使用例示實施例的圖更詳細說明如下。在附圖中：圖1顯示以簡化顯示及剖面的主動冷卻器或主動散熱器形式的中空體；圖2以示意圖顯示之用以生產圖1的中空體的方法的不同方法步驟；圖3以簡化顯示及剖面顯示依據本發明另一實施例之主動冷卻器的形式之中空體； 圖4以示意圖顯示用以生產圖3的中空體的方法的不同方法步驟；圖5以簡化顯示及剖面顯示依據本發明另一實施例之主動冷卻器形式之中空體；圖6以示意圖顯示生產圖5的中空體的方法的不同方法步驟；圖7以簡化顯示及剖面顯示依據本發明之另一實施例的主動冷卻器形式的中空體；圖8以示意顯示用以生產圖7的中空體的方法的不同方法步驟；圖9以示意圖顯示在本發明之另一實施例之生產圖1、3、5及7的中空體的方法的不同部份步驟；圖10及11各個顯示在生產圖1、3、5及7的中空體時的燒結電流Is的等時性分佈圖；圖12顯示在生產圖1、3、5或7時，燒結壓力Ps的等時分佈圖。 The present invention is described in more detail below using an exemplary embodiment. In the drawings: Figure 1 shows a hollow body in the form of an active cooler or active heat sink in simplified display and section; Figure 2 shows in schematic view the different method steps of the method for producing the hollow body of Figure 1; Simplified display and cross-section showing a hollow body in the form of an active cooler in accordance with another embodiment of the present invention; Figure 4 is a schematic view showing different method steps of the method for producing the hollow body of Figure 3; Figure 5 shows a hollow body in the form of an active cooler according to another embodiment of the present invention in a simplified display and a cross-sectional view; Figure 6 shows the production in a schematic view FIG. 7 shows a hollow body in the form of an active cooler according to another embodiment of the present invention in a simplified display and a cross-sectional view; FIG. 8 is a schematic view showing the hollow body used in the production of FIG. Different method steps of the method; FIG. 9 is a schematic view showing different steps of the method for producing the hollow body of FIGS. 1, 3, 5 and 7 in another embodiment of the present invention; FIGS. 10 and 11 are each shown in the production drawing Isochronous distribution map of the sintering current Is at the time of hollow bodies of 1, 3, 5 and 7; Fig. 12 shows an isochronous distribution diagram of the sintering pressure Ps at the time of production of Figs. 1, 3, 5 or 7.

在圖1及2中，1為冷卻器形式之中空體。中空體由多數金屬層2-5構成，這些係被以堆疊狀以堆疊方式排列於另一個之上並各個由金屬箔形成並藉由以燒結層6-8形式之黏結層以燒結而彼此結合。燒結層6-8為堆疊配置的一部份，即，在各個例子中，一燒結層6-8係被排列於兩金屬層2-5之間。 In Figures 1 and 2, 1 is a hollow body in the form of a cooler. The hollow body is composed of a plurality of metal layers 2-5 which are arranged in a stacked manner on top of each other and are each formed of a metal foil and bonded to each other by sintering in the form of a sintered layer in the form of a sintered layer 6-8. . The sintered layers 6-8 are part of a stacked configuration, i.e., in each of the examples, a sintered layer 6-8 is arranged between the two metal layers 2-5.

兩金屬層2及5形成外層或中空體1的頂及底。金屬層3及4被排列於金屬層2及5之間，並在中空體1中形成空腔9，即當中空體1係被使用作為主動冷卻器時，蒸氣態及/或氣態或較佳液體熱傳遞媒體或冷卻媒體流經冷卻器的冷卻結構。空腔或冷卻器結構係在中空體1的頂及低為其中之金屬層2及5所閉合。在圖1中以1.1表示之連接係被用以供給及排放冷卻媒體。金屬層3及4係被設有多數開口10，以形成空腔9或冷卻器結構，其中各個開口10的開放在所示實施例中為連續的，即由金屬層3及4的一表面側延伸至另一表面側。開口10主要可以任何方式被形成及/或排列，只要必要的冷卻器結構被產生即可，較佳冷卻器結構具有固定分支冷卻通道及/或具有連續柱1.2，其連接金屬層2及5並由金屬層2及4與燒結層6-8的材料構成。在金屬層3及4的開口10係例如藉由衝孔、切割(包含雷射切割)或以蝕刻及遮罩法中之蝕刻產生。 The two metal layers 2 and 5 form the outer layer or the top and bottom of the hollow body 1. The metal layers 3 and 4 are arranged between the metal layers 2 and 5, and a cavity 9 is formed in the hollow body 1, that is, when the hollow body 1 is used as an active cooler, a vapor state and/or a gas state or preferably The liquid heat transfer medium or cooling medium flows through the cooling structure of the cooler. The cavity or cooler structure is closed at the top of the hollow body 1 and the metal layers 2 and 5 in which it is low. The connection, indicated at 1.1 in Figure 1, is used to supply and discharge the cooling medium. The metal layers 3 and 4 are provided with a plurality of openings 10 to form a cavity 9 or a cooler structure, wherein the opening of each opening 10 is continuous in the illustrated embodiment, i.e., by a surface side of the metal layers 3 and 4. Extend to the other surface side. The openings 10 can be formed and/or arranged in any manner, as long as the necessary chiller structure is produced, preferably having a fixed branch cooling passage and/or having a continuous column 1.2 connecting the metal layers 2 and 5 and It consists of the materials of the metal layers 2 and 4 and the sintered layer 6-8. The openings 10 in the metal layers 3 and 4 are produced, for example, by punching, cutting (including laser cutting) or etching in etching and masking.

圖2顯示在位置a-i中生產中空體1的方法的主要步驟。在位置a及b中，提供有上金屬層2。在步驟c及e中，設有開口10的金屬層3及4係被提供並且然後在位置d及f中，各個設有燒結材料層6.1及7.1在表面側上，燒結材料隨後在燒結後形成燒結層6及7。層6.1及7.1係被施用使得個別層並不會覆蓋開口10。 Figure 2 shows the main steps of the method of producing the hollow body 1 in the position a-i. In positions a and b, the upper metal layer 2 is provided. In steps c and e, metal layers 3 and 4 provided with openings 10 are provided and then in positions d and f, each of which is provided with layers 6.1 and 7.1 of sintered material on the surface side, the sintered material is subsequently formed after sintering Sintered layers 6 and 7. Layers 6.1 and 7.1 are applied such that the individual layers do not cover the opening 10.

在位置g中，提供有金屬層5然後在位置h設有燒結材料層8.1在表面側上，在燒結後，燒結材料形 成燒結層8。在位置i，設有燒結材料的個別金屬層2-5係被彼此堆疊在一起，使得金屬層2-5在此堆疊中彼此跟隨藉由燒結材料層6.1、7.1及8.1彼此相靠在一起。然後，以此方式形成之堆疊係被排列於兩電極11及12之間，其中電極11係放在金屬層2背向金屬層3及4的表面側上，及電極12係被放在金屬層5背向金屬層3及4的表面側上，使得個別電極11或12以其電極面完全地覆蓋相關金屬化層2或5，但較佳地突出為金屬層2-5所形成之堆疊的邊緣。電極11例如係為如液壓床的壓床的壓模的一部份，用以產生高壓或燒結壓力Ps。電極12然後為該壓床的工作台的一部份。 In position g, a metal layer 5 is provided and then a layer of sintered material 8.1 is provided on the surface side at position h, after sintering, the sintered material is shaped Sintered layer 8. At the position i, the individual metal layers 2-5 provided with the sintered material are stacked one on another such that the metal layers 2-5 follow each other in this stack by the sintered material layers 6.1, 7.1 and 8.1. Then, the stacked system formed in this manner is arranged between the two electrodes 11 and 12, wherein the electrode 11 is placed on the surface side of the metal layer 2 facing away from the metal layers 3 and 4, and the electrode 12 is placed on the metal layer. 5 facing away from the surface side of the metal layers 3 and 4 such that the individual electrodes 11 or 12 completely cover the associated metallization layer 2 or 5 with their electrode faces, but preferably protrude as a stack of metal layers 2-5 edge. The electrode 11 is, for example, part of a stamper of a press such as a hydraulic bed for generating a high pressure or sintering pressure Ps. The electrode 12 is then part of the table of the press.

結合金屬層2-5也是防漏的燒結層6-8的燒結或形成係為電流源13所供給的燒結電流Is所發生在燒結壓力Ps下，該壓力係以垂直於其表面側的方式被施用至電極11及12，因此，至金屬層2-5及其間之層6.1、7.1及8.1，電極11及12間之電壓為低，例如，在範圍2伏及25伏內。 The sintering or formation of the sintered metal layer 2-5, which is also a leak-proof sintered layer 6-8, occurs when the sintering current Is supplied from the current source 13 occurs at a sintering pressure Ps which is perpendicular to the surface side thereof. Applied to electrodes 11 and 12, therefore, to metal layers 2-5 and layers 6.1, 7.1 and 8.1 therebetween, the voltage between electrodes 11 and 12 is low, for example, in the range of 2 volts and 25 volts.

當金屬層2-5及用於層6.1、7.1及8.1的燒結材料被導電時，燒結層6-8可以為電流或火花燒結所形成，當然燒結電流Is被設定使得到達必要燒結溫度，但並未發生熔化程序。 When the metal layer 2-5 and the sintered material for the layers 6.1, 7.1 and 8.1 are electrically conductive, the sintered layer 6-8 may be formed by electric current or spark sintering, of course, the sintering current Is is set so as to reach the necessary sintering temperature, but No melting procedure occurred.

燒結層8係被顯示在圖1及2中作為連續層。然而，因為燒結只發生於燒結壓力Ps足夠有效同時燒結電流Is流動的區域，即，在開口10外側的金屬層4 的下側上，因此，其他殘留或過量及未燒結材料可以在燒結後被洗出，在完成中空體1中的燒結層8被同樣地建構，即，並未出現或只出現在金屬層4中的開口10處具有降低厚度。 Sintered layer 8 is shown in Figures 1 and 2 as a continuous layer. However, since the sintering occurs only in a region where the sintering pressure Ps is sufficiently effective while the sintering current Is flows, that is, the metal layer 4 outside the opening 10 On the underside, therefore, other residual or excess and unsintered materials can be washed out after sintering, and the sintered layer 8 in the finished hollow body 1 is likewise constructed, ie, does not appear or only appears in the metal layer 4 The opening 10 in the middle has a reduced thickness.

圖3隨後顯示中空體1a的剖面圖，其與中空體1的實質不同在於將下金屬層5結合至其上的金屬層4的燒結層8建構處已經被結構施用層8.1所建構，使得由金屬層5所形成的下側上的中空體1a的空腔9被可靠地為金屬層5所定界而不是為燒結層8所定界。 Figure 3 then shows a cross-sectional view of the hollow body 1a, which is substantially different from the hollow body 1 in that the sintered layer 8 of the metal layer 4 to which the lower metal layer 5 is bonded has been constructed by the structural application layer 8.1, so that The cavity 9 of the hollow body 1a on the lower side formed by the metal layer 5 is reliably delimited by the metal layer 5 instead of being bound by the sintered layer 8.

圖4隨後顯示用以在位置a-i生產中空體1a的方法的主要步驟，此方法不同於圖2的方法只在於位置h中，形成後續燒結層8的燒結材料係被施用於在已經建構於層8.1中的情況，使得此材料係只位於金屬層4放在開口10外的層8.1之上。依據位置i，為防漏的燒結層6-8，更明確地說，用以供熱傳送媒體流經空腔9的燒結層6-8係藉由施加燒結壓力Ps及經由電極11及12施加燒結電流Is而形成。 Fig. 4 then shows the main steps of the method for producing the hollow body 1a at the position ai, which differs from the method of Fig. 2 only in the position h, and the sintered material forming the subsequent sintered layer 8 is applied to the layer already constructed. The condition in 8.1 is such that the material is only located above layer 8.1 of metal layer 4 outside of opening 10. Depending on the position i, the leak-proof sintered layer 6-8, more specifically, the sintered layer 6-8 for supplying the heat transfer medium through the cavity 9 is applied by applying the sintering pressure Ps and via the electrodes 11 and 12. The sintering current Is is formed.

圖5顯示由上金屬層14與下金屬層15構成的中空體1b，作為在簡化剖面顯示圖的另一實施例。金屬層14及15均為金屬箔。為了形成向外閉合的空腔16或者熱傳輸媒體或冷卻媒體可以流動其間之冷卻器結構，下金屬化層15被設有印記或下凹17。兩金屬層14及15再次藉由燒結層18彼此連接，該燒結層至少對於熱傳輸媒體或冷卻媒體為防漏的。 Fig. 5 shows a hollow body 1b composed of an upper metal layer 14 and a lower metal layer 15, as another embodiment of the simplified cross-sectional view. The metal layers 14 and 15 are both metal foils. In order to form the outwardly closed cavity 16 or the cooler structure in which the heat transfer medium or cooling medium can flow, the lower metallization layer 15 is provided with an imprint or depression 17. The two metal layers 14 and 15 are again connected to each other by a sintered layer 18 which is leak-proof at least for the heat transfer medium or the cooling medium.

圖6顯示在位置a-f生產中空體1b的主要方法步驟。依據位置a及b，被提供有金屬層14，然後，在位置c及d，對應於金屬層14的金屬層係被用以形成具有下凹17的金屬層15，例如，藉由遮罩及蝕刻法之結構蝕刻。在位置e，形成後續燒結層18的由燒結材料構成的結構層18.1然後被施加至金屬層15，使得下凹17並未為燒結材料所覆蓋。在位置f中，具有層18.1的兩金屬層14及15然後被用以在電極11及12間形成一堆疊，然後結合兩金屬層14及15的防漏燒結層18係藉由對該堆疊施加燒結壓力P及燒結電流I而加以產生。 Figure 6 shows the main method steps for producing the hollow body 1b at the position a-f. Depending on the locations a and b, the metal layer 14 is provided. Then, at positions c and d, the metal layer corresponding to the metal layer 14 is used to form the metal layer 15 having the recess 17, for example, by masking and Structure etching of the etching method. At position e, the structural layer 18.1 of sintered material forming the subsequent sintered layer 18 is then applied to the metal layer 15 such that the recess 17 is not covered by the sintered material. In position f, the two metal layers 14 and 15 having layer 18.1 are then used to form a stack between electrodes 11 and 12, and then the leak-proof sintered layer 18 of the two metal layers 14 and 15 is applied by applying the stack. The sintering pressure P and the sintering current I are generated.

圖7顯示透過中空體1c的剖面圖，其與圖5的中空體不同在於金屬層14也設有下凹17，使得在兩金屬層14及15中之下凹17互補向外閉合空腔16或向外閉合的冷卻器結構。兩金屬層14及15再次藉由結構之防漏燒結層18而彼此結合。 Figure 7 shows a cross-sectional view through the hollow body 1c, which differs from the hollow body of Figure 5 in that the metal layer 14 is also provided with a recess 17 such that the lower recess 17 in the two metal layers 14 and 15 complements the outer closed cavity 16 Or a cooler structure that closes outward. The two metal layers 14 and 15 are again bonded to each other by the leak-proof sintered layer 18 of the structure.

圖8顯示在位置a-g中生產中空體1c的方法的主要方法步驟，此方法不同於圖6的方法只在於在步驟a及g中，金屬層14係設有下凹17。 Figure 8 shows the main method steps of the method of producing the hollow body 1c in the position a-g, which differs from the method of Figure 6 only in that the metal layer 14 is provided with a recess 17 in steps a and g.

在每一例子中，燒結層6-8及18延伸於相鄰金屬層2-5、14及15的整個區域上，但是在金屬層3、4、14及15中的開口10及下凹17仍然在這些實施例中保持開放。 In each of the examples, the sintered layers 6-8 and 18 extend over the entire area of the adjacent metal layers 2-5, 14 and 15, but the openings 10 and the recesses 17 in the metal layers 3, 4, 14 and 15 It remains open in these embodiments.

為了改良燒結法及/或藉由燒結層6-8、18之在金屬層2-5、14及15間之燒結結合，在施加由燒結材 料構成之層6.1、7.1、8.1或18.1之前，可以權宜地提供具有金屬中間層19的相關金屬層，如例如圖9所示之在位置a及b中之金屬層5。由燒結材料構成的結構或連續層8.1然後施加至該金屬中間層19(位置c及d)。中間層19也可以為抗蝕層或此一層的一部份，其例如然後延伸於金屬層的整個自由區域上。 In order to improve the sintering method and/or by sintering the sintered layers 6-8, 18 between the metal layers 2-5, 14 and 15, the sintering material is applied Prior to the formation of layers 6.1, 7.1, 8.1 or 18.1, an associated metal layer having a metallic intermediate layer 19, such as, for example, the metal layer 5 in positions a and b shown in Figure 9, may be provided. A structure or continuous layer 8.1 of sintered material is then applied to the metal intermediate layer 19 (positions c and d). The intermediate layer 19 can also be a resist layer or a portion of this layer that extends, for example, over the entire free area of the metal layer.

銅、鋁、鐵、鎳、鈦、鉬、鎢、鉭、銀、金及上述金屬的合金，例如銅合金、鐵合金、銀合金、鋁合金、鈦合金，以及，具有不同金屬，例如上述金屬或金屬合金的多數層的多分層材料係可為作為金屬層2-5、14及15的適當材料。 Copper, aluminum, iron, nickel, titanium, molybdenum, tungsten, niobium, silver, gold, and alloys of the foregoing metals, such as copper alloys, iron alloys, silver alloys, aluminum alloys, titanium alloys, and, having different metals, such as the above metals or The multi-layered material of the majority of the layers of the metal alloy may be a suitable material for the metal layers 2-5, 14 and 15.

例如由銅、銀、金、鋁、鎳、鐵、鈦或上述金屬的合金，例如，銅合金、鐵合金、銀合金、鋁合金、鉭合金構成的能被燒結的微粒或粉狀金屬材料或金屬粉末，以及，包含能被燒結之微粒或粉末金屬材料或金屬粉末的混合物或膏料及其他添加物係為作為層6.1、7.1、8.1及18.1的適當燒結材料。能被燒結之微粒或粉末金屬材料的粒子大小係例如在範圍0.1微米及50微米之間。燒結材料係以例如單模態、雙模態或三模態形式出現。 For example, copper, silver, gold, aluminum, nickel, iron, titanium or an alloy of the above metals, for example, a sintered alloy or a powdery metal material or metal composed of a copper alloy, an iron alloy, a silver alloy, an aluminum alloy, or a tantalum alloy. The powder, as well as mixtures or pastes and other additives comprising fine particles or powder metal materials or metal powders which can be sintered, are suitable sintered materials for layers 6.1, 7.1, 8.1 and 18.1. The particle size of the particles that can be sintered or the powder metal material is, for example, in the range of 0.1 micrometers and 50 micrometers. The sintered material appears in, for example, a single mode, a bimodal state, or a trimodal form.

層6.1、7.1、8.1及18.1在個別方法中以相同材料構成，例如，被施加以範圍5至300微米的層厚度。層6.1、7.1、8.1及18.1係例如使用印刷法，例如網印法、藉由靜電噴灑、噴出或藉由使用施加滾輪加以施加。其他方法也是可能。 Layers 6.1, 7.1, 8.1 and 18.1 are composed of the same material in individual methods, for example, applied to a layer thickness ranging from 5 to 300 microns. Layers 6.1, 7.1, 8.1 and 18.1 are applied, for example, by printing, such as screen printing, by electrostatic spraying, spraying or by using an application roller. Other methods are also possible.

銅、鎳、鉻、銀、金、鈀、鉑或例如上述金屬的合金係適用於該金屬中間層19，其金屬係不同於承載有該中間層的金屬層2-5、14或15的金屬。中間層19可以以不同方式施加，例如，電鍍、化學沈積或CVD法，藉由濺鍍、電漿噴出、冷氣噴出等。中間層19的厚度例如於範圍0.05微米至100微米間。 Copper, nickel, chromium, silver, gold, palladium, platinum or an alloy such as the above metal is suitable for the metal intermediate layer 19, the metal of which is different from the metal of the metal layer 2-5, 14 or 15 carrying the intermediate layer. . The intermediate layer 19 can be applied in different ways, such as electroplating, chemical deposition or CVD, by sputtering, plasma spraying, cold air ejection, and the like. The thickness of the intermediate layer 19 is, for example, in the range of 0.05 μm to 100 μm.

於燒結時所用之燒結壓力Ps係例如在範圍0.5kN/cm2及6.0kN/cm2之間。燒結電流Is較佳係被選擇，使得在予以產生之燒結層6-8、18的區域，即發生燒結處理處的電流密度於範圍10A/cm2及300A/cm2之間。 Sintering pressure Ps system being used at the time of sintering, for example, the range of 0.5kN / cm 2 and 6.0kN / between 2 cm. The sintering current Is is preferably selected such that the current density at the sintering treatment zone in the region where the sintered layers 6-8, 18 are produced is in the range of 10 A/cm 2 and 300 A/cm 2 .

為了改良燒結效能及完成具有高電流峰值的燒結電流Is，可以權宜地使用如圖10所示之脈衝狀燒結電流Is，其個別電流脈衝的脈寬t1係於範圍1毫秒及500毫秒之間及脈衝時間間隔t2係於範圍0毫秒及400毫秒之間。在此時，也可以如圖11所示權宜地將電流脈衝重疊上交流電流或其他較小電流脈衝。 In order to improve the sintering efficiency and complete the sintering current Is having a high current peak, the pulsed sintering current Is as shown in FIG. 10 can be used expediently, and the pulse width t1 of the individual current pulses is in the range of 1 millisecond and 500 milliseconds. The pulse time interval t2 is between 0 milliseconds and 400 milliseconds. At this time, it is also expedient to superimpose the current pulse on the alternating current or other small current pulse as shown in FIG.

為了改良燒結層6-8及18的形成，也可權宜地使燒結壓力Ps被以脈衝狀方式施加，以例如圖12所示之形式，一固定燒結壓力Psmin被疊加上在燒結壓力上的脈衝狀增量，使得燒結壓力Ps於壓力Psmax與值Psmin間之脈衝狀方式改變。壓力Psmin然後例如於0.05Psmax及0.98Psmax之間，Psmax係由範圍0.5kN/cm2及6kN/cm2之間選出。脈衝狀壓力施加的週期持續時間tp係例如於範圍0.5毫秒及3000毫秒之間。 In order to improve the formation of the sintered layers 6-8 and 18, it is also expedient to apply the sintering pressure Ps in a pulsed manner, for example, in the form shown in Fig. 12, a fixed sintering pressure Psmin is superimposed on the sintering pressure. The increment is such that the sintering pressure Ps changes in a pulsed manner between the pressure Psmax and the value Psmin. The pressure Psmin is then, for example, between 0.05 Psmax and 0.98 Psmax, and the Psmax is selected from the range of 0.5 kN/cm 2 and 6 kN/cm 2 . The period duration tp of the pulsed pressure application is, for example, between the range of 0.5 milliseconds and 3000 milliseconds.

在依據本發明之方法的另一實施例中，在由燒結壓力Psmin的燒結處理時，燒結壓力Ps增加並在燒結處理或燒結階段結束之前到達值Pmax，如圖12之實線所示。再者，在此實施例中，也可能增加予以為燒結壓力所疊加之燒結壓力Ps以脈衝狀方式改變。 In another embodiment of the method according to the invention, at the sintering treatment by the sintering pressure Psmin, the sintering pressure Ps increases and reaches a value Pmax before the end of the sintering treatment or sintering phase, as indicated by the solid line in FIG. Further, in this embodiment, it is also possible to increase the sintering pressure Ps superimposed on the sintering pressure in a pulse-like manner.

明確地說，增加之燒結壓力具有預燒結發生在燒結階段開始的優點，因此，發生至少某部份量的燒結材料及由此材料所形成之燒結層的穩定化，然後，除了燒結外，也可能在燒結階段進行中發生燒結材料的增加壓縮，以此方式，完成燒結層6-8及18，這些至少對熱傳輸媒體為防漏的。 In particular, the increased sintering pressure has the advantage that pre-sintering occurs at the beginning of the sintering phase, so that at least some portion of the sintered material and the sintered layer formed by the material are stabilized, and then, in addition to sintering, It is possible that during the sintering phase, an increased compression of the sintered material occurs, in such a way that the sintered layers 6-8 and 18 are completed, which are at least leak-proof to the heat transfer medium.

為了改良燒結材料的膏料流動特性，它們較佳也包含有機添加劑，例如纖維素。於此時，在個別膏料施加之後及在燒結階段開始之前，例如，在堆疊金屬層2-5、14及15之前後，發生有機添加劑的乾燥及烘焙。如果堆疊配置係安排於電極11及12之間，在對應調整下的電流密度及壓力P下，有機添加劑的乾燥及烘焙也可以特別使用電流加以發生。 In order to improve the paste flow characteristics of the sintered materials, they preferably also contain organic additives such as cellulose. At this time, drying and baking of the organic additive occurs after application of the individual pastes and before the start of the sintering phase, for example, before the metal layers 2-5, 14 and 15 are stacked. If the stacking arrangement is arranged between the electrodes 11 and 12, the drying and baking of the organic additive can also take place in particular using an electric current under the correspondingly adjusted current density and pressure P.

個別中空體1、1a-1c較佳形成用於電或電子元件20的主動冷卻器，例如，用於二極體雷射條的例如光電元件。 The individual hollow bodies 1, 1a-1c preferably form an active cooler for the electrical or electronic component 20, for example, a photovoltaic element for a diode laser strip.

本發明已經使用例示實施例加以描述如上。可以自明的，各種變化及修改可以在不脫離本發明概念下完成。 The invention has been described above using illustrative embodiments. It is to be understood that various changes and modifications can be made without departing from the inventive concept.

例如，如果使用膏料狀燒結材料，則可以方便地在施加燒結材料的層6.1-8.1、18.1後，加熱金屬層2-5、14及15的個別堆疊，以協助燒結處理及/或烘焙添加劑，更明確說，有機添加劑。 For example, if a paste-like sintered material is used, it is convenient to heat the individual stacks of metal layers 2-5, 14 and 15 after application of layers 6.1-8.1, 18.1 of the sintered material to assist in the sintering and/or baking additives. More specifically, organic additives.

1‧‧‧中空體 1‧‧‧ hollow body

1.1‧‧‧連接 1.1‧‧‧Connect

1.2‧‧‧連續柱 1.2‧‧‧Continuous column

2-5‧‧‧金屬層 2-5‧‧‧metal layer

6-8‧‧‧燒結層 6-8‧‧‧Sintered layer

9‧‧‧空腔 9‧‧‧ cavity

10‧‧‧開口 10‧‧‧ openings

20‧‧‧電或電子元件 20‧‧‧Electric or electronic components

Claims (21)

一種生產中空體的方法，尤其是冷卻器的中空體，該中空體具有：至少兩金屬層(2-5、14、15)，其係藉由堆疊配置以形成一堆疊並藉由至少一結合或黏結層(6-8、18)而彼此結合；及至少一空腔(9，16)，其係被形成在該堆疊內並藉由結構至少一金屬層(3、4、14、15)而產生，其中由黏結材料所構成的一層(6.1、7.1、8.1、18.1)係在堆疊前被施加至在該堆疊內的彼此相鄰的金屬層(2-5、14、15)之表面側的至少之一並在堆疊後被轉換為結合該等金屬層(2-5、14、15)的該黏結層，其特徵在於：燒結材料被使用為該黏結材料，及在堆疊後，在燒結階段中，該彼此結合該等金屬層(2-5、14、15)的黏結層係由該燒結材料，在燒結壓力(Ps)下藉由施加電流(Is)而以燒結層(6-8、18)的形式產生。 A method of producing a hollow body, in particular a hollow body of a cooler, having: at least two metal layers (2-5, 14, 15) arranged by stacking to form a stack and by at least one combination Or bonding layers (6-8, 18) to each other; and at least one cavity (9, 16) formed in the stack and structured by at least one metal layer (3, 4, 14, 15) Produced, wherein a layer (6.1, 7.1, 8.1, 18.1) composed of a bonding material is applied to the surface side of the adjacent metal layers (2-5, 14, 15) in the stack before stacking At least one of and at the time of stacking is converted into the bonding layer in combination with the metal layers (2-5, 14, 15), characterized in that the sintered material is used as the bonding material, and after stacking, in the sintering stage The bonding layer bonded to the metal layers (2-5, 14, 15) from the sintered material is sintered at a sintering pressure (Ps) by applying a current (Is) to the sintered layer (6-8, The form of 18) is produced. 如申請專利範圍第1項所述之方法，其中在該堆疊內部的至少一金屬層(3、4)設有連續開口(10)，被建構以形成該至少一空腔(9)。 The method of claim 1, wherein the at least one metal layer (3, 4) inside the stack is provided with a continuous opening (10) configured to form the at least one cavity (9). 如申請專利範圍第1或2項所述之方法，其中至少一金屬化層(14、15)設有印記或下凹(17)，被建構在面向相鄰金屬化層(15、14)的側面上。 The method of claim 1 or 2, wherein the at least one metallization layer (14, 15) is provided with an imprint or a recess (17), which is constructed to face the adjacent metallization layer (15, 14). On the side. 如申請專利範圍第3項所述之方法，其中由該燒結材料構成的該層(6.1、7.1、8.1、18.1)係被施加至在該開口(10)及下凹(17)外的金屬層(2-5、14、15) 的表面區域。 The method of claim 3, wherein the layer (6.1, 7.1, 8.1, 18.1) composed of the sintered material is applied to a metal layer outside the opening (10) and the recess (17). (2-5, 14, 15) Surface area. 如申請專利範圍第1項所述之方法，其中銅、鋁、鐵、鈦、鉬、鎢、鉭、銀、金或包含前述金屬的合金或銅與銅合金或鋁與鋁合金的層係被使用作為金屬層(2-5、14、15)。 The method of claim 1, wherein the copper, aluminum, iron, titanium, molybdenum, tungsten, tantalum, silver, gold or an alloy comprising the foregoing metal or a layer of copper and copper alloy or aluminum and aluminum alloy is Used as a metal layer (2-5, 14, 15). 如申請專利範圍第1項所述之方法，其中能被燒結之例如由銅、鐵、鈦、銀、金或含上述金屬的合金的微粒或粉末狀金屬材料或金屬粉末，或例如包含該金屬粉末的膏狀材料係被使用作為燒結材料。 The method of claim 1, wherein the particles, such as copper, iron, titanium, silver, gold, or an alloy containing the above metal, or a powdered metal material or metal powder, or the like, can be sintered. A powdered paste material is used as the sintered material. 如申請專利範圍第1項所述之方法，其中在施加該燒結材料或由例如中間層(19)與該燒結材料構成的層(6.1、7.1、8.1、18.1)之前，予以為該燒結層(6-8、18)所結合的該金屬層(2-5、14、15)的至少之一係在其表面側上設有一金屬中間層(19)，該金屬中間層(19)係由鎳、鉻、銀、金、銅、鉑、鈀所構成的群組中所選出的至少一金屬所構成，及其中該金屬中間層(19)係例如藉由濺鍍、電漿噴射及/或冷噴在電鍍上、化學上加以施加。 The method of claim 1, wherein the sintered layer is applied prior to applying the sintered material or a layer (6.1, 7.1, 8.1, 18.1) composed of, for example, an intermediate layer (19) and the sintered material ( 6-8, 18) at least one of the metal layers (2-5, 14, 15) to be bonded is provided with a metal intermediate layer (19) on the surface side thereof, the metal intermediate layer (19) being made of nickel And at least one metal selected from the group consisting of chromium, silver, gold, copper, platinum, and palladium, and wherein the metal intermediate layer (19) is, for example, by sputtering, plasma spraying, and/or cold The spray is applied to the plating and chemically applied. 如申請專利範圍第7項所述之方法，其中該金屬中間層係被施加有範圍0.05微米至100微米間之厚度。 The method of claim 7, wherein the metal intermediate layer is applied with a thickness ranging from 0.05 micrometers to 100 micrometers. 如申請專利範圍第1項所述之方法，其中能夠被燒結的微粒或粉末狀金屬材料或金屬粉末係被以單模態、雙模態或三模態形式被使用作為該燒結材料。 The method of claim 1, wherein the fine particles or powdery metal material or metal powder capable of being sintered are used as the sintered material in a single mode, a bimodal state or a trimodal form. 如申請專利範圍第1項所述之方法，其中由該燒 結材料構成的該層(6.1、7.1、8.1、18.1)係被施加以範圍於5微米至300微米間的層厚度。 The method of claim 1, wherein the method comprises The layer (6.1, 7.1, 8.1, 18.1) of the junction material is applied to a layer thickness ranging from 5 microns to 300 microns. 如申請專利範圍第1項所述之方法，其中在該燒結階段，金屬層(2-5、14、15)的該堆疊在予以生產該燒結層(6-8、18)的區域中，受到範圍於0.5kN/cm2至6kN/cm2間的燒結壓力(Ps)及/或於10A/cm2至300A/cm2間的燒結電流密度。 The method of claim 1, wherein in the sintering stage, the stack of metal layers (2-5, 14, 15) is subjected to a region in which the sintered layer (6-8, 18) is produced. The sintering pressure (Ps) ranging from 0.5 kN/cm 2 to 6 kN/cm 2 and/or the sintering current density between 10 A/cm 2 and 300 A/cm 2 . 如申請專利範圍第1項所述之方法，其中該金屬層(2-5、14、15)的堆疊係安排於兩電極(11、12)之間，以施加該燒結壓力(Ps)及燒結電流(Es)。 The method of claim 1, wherein the stack of metal layers (2-5, 14, 15) is arranged between the two electrodes (11, 12) to apply the sintering pressure (Ps) and sintering Current (Es). 如申請專利範圍第1項所述之方法，其中在該燒結階段期間，該燒結壓力(Ps)係例如由下燒結壓力(Psmin)增加至上燒結壓力(Psmax)作變化及/或以壓力脈衝於該下燒結壓力(Psmin)及該上燒結壓力(Psmax)間改變之脈衝狀方式作變化，其中該下燒結壓力(Psmin)係例如在該上燒結壓力(Psmax)的5%至98%間之範圍內及該壓力脈衝的持續時間係於0.5毫秒至3000毫秒間之範圍內。 The method of claim 1, wherein during the sintering phase, the sintering pressure (Ps) is varied, for example, from a lower sintering pressure (Psmin) to an upper sintering pressure (Psmax) and/or a pressure pulse a change in the pulse-like manner between the lower sintering pressure (Psmin) and the upper sintering pressure (Psmax), wherein the lower sintering pressure (Psmin) is, for example, between 5% and 98% of the upper sintering pressure (Psmax) The duration of the pressure pulse and the duration of the pressure pulse is in the range of 0.5 milliseconds to 3000 milliseconds. 如申請專利範圍第1項所述之方法，其中該燒結壓力及該燒結電流係被設定，使得產生防漏燒結層(6-8、18)。 The method of claim 1, wherein the sintering pressure and the sintering current are set such that a leak-proof sintered layer (6-8, 18) is produced. 如申請專利範圍第1項所述之方法，其中該燒結材料或由該燒結材料構成的層(6.1、7.1、8.1、18.1)係藉由網印、噴灑、噴射及/或靜電方式施加。 The method of claim 1, wherein the sintered material or the layer (6.1, 7.1, 8.1, 18.1) composed of the sintered material is applied by screen printing, spraying, spraying and/or electrostatic means. 如申請專利範圍第1項所述之方法，其中在該燒結階段初始之前及/或在燒結階段期間，例如，藉由運用調整或降低電流密度及降低壓縮壓力至該等層，而進行添加劑，更明確地說，該燒結材料或該燒結材料的該等層(6.1、7.1、8.1、18.1)的有機添加劑之乾燥及/或烘焙。 The method of claim 1, wherein the additive is performed before the initial stage of the sintering stage and/or during the sintering stage, for example, by applying adjustment or reduction of current density and reduction of compression pressure to the layers. More specifically, the sintered material or the organic additive of the layers (6.1, 7.1, 8.1, 18.1) of the sintered material is dried and/or baked. 如申請專利範圍第1項所述之方法，其中，在該燒結階段後，未燒結的燒結材料係例如藉由洗出移除。 The method of claim 1, wherein the unsintered sintered material is removed, for example, by washing out after the sintering stage. 如申請專利範圍第1項所述之方法，其中該中空體(1、1a-1c)的熱均衡壓力發生，以進一步壓縮該燒結層(6-8、18)。 The method of claim 1, wherein the thermal equilibrium pressure of the hollow body (1, 1a-1c) occurs to further compress the sintered layer (6-8, 18). 一種中空體，更明確地說，由至少兩金屬層(2-5、14、15)構成之形成堆疊的冷卻器，其中在該堆疊內的彼此相鄰的金屬層(2-5、14、15)係於彼此面向的表面側藉由結合或黏結層(6-8、18)彼此結合，及在該堆疊的內部的至少一金屬層(3、4、14、15)係例如藉由形成多數開口(10)及/或印記或下凹(17)而被建構以形成至少一空腔(9、16)，其特徵在於：該個別黏結層(6-8、18)係為由金屬燒結材料構成的燒結層，及該中空體係較佳依據如申請專利範圍第1至18項中任一項所述之方法產生。 A hollow body, more specifically, a stack of coolers formed of at least two metal layers (2-5, 14, 15), wherein adjacent metal layers (2-5, 14 in the stack) 15) bonding to each other on the surface side facing each other by bonding or bonding layers (6-8, 18), and at least one metal layer (3, 4, 14, 15) inside the stack is formed, for example, by A plurality of openings (10) and/or imprints or depressions (17) are constructed to form at least one cavity (9, 16), characterized in that the individual bonding layers (6-8, 18) are made of a metal sintered material. The sintered layer is formed, and the hollow system is preferably produced according to the method of any one of claims 1 to 18. 一種模組，具有被形成為冷卻器的至少一中空體(1、1a-1c)，並具有至少一電或電子元件(20)設在該冷卻器上，其特徵在於：該中空體(1、1a-1c)係依據如申請專利範圍第19 項所述形成。 A module having at least one hollow body (1, 1a-1c) formed as a cooler and having at least one electrical or electronic component (20) disposed on the cooler, characterized in that the hollow body (1) , 1a-1c) is based on the scope of the patent application Formed as described in the item. 如申請專利範圍第20項所述之模組，其中其係為一光電模組及/或該元件(20)為光電元件。 The module of claim 20, wherein the module is a photovoltaic module and/or the component (20) is a photovoltaic component.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851625A (en) * 2015-09-03 2018-03-27 大陆汽车有限公司 Cooling device, the method for producing cooling device and power circuit
TWI749708B (en) * 2020-08-14 2021-12-11 大陸商廣州力及熱管理科技有限公司 A high-power vapor chamber structure manufacturing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014204347A1 (en) * 2014-03-10 2015-09-10 Siemens Aktiengesellschaft Spark plasma sintering with improved joining zone strength
DE102014213490C5 (en) * 2014-07-10 2020-06-18 Continental Automotive Gmbh Cooling device, method for producing a cooling device and power circuit
CN106449567B (en) * 2016-11-26 2018-11-23 江苏拓博制冷科技有限公司 A kind of cooler

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB931096A (en) * 1958-07-02 1963-07-10 Minnesota Mining & Mfg Improvements in ceramic articles
DE2213115C3 (en) * 1972-03-17 1975-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the high-strength joining of ceramics made of carbides, including diamonds, borides, nitrides or suicides, with metal by the dry soldering process
US3766634A (en) * 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
US3744120A (en) * 1972-04-20 1973-07-10 Gen Electric Direct bonding of metals with a metal-gas eutectic
JPH0810710B2 (en) * 1984-02-24 1996-01-31 株式会社東芝 Method for manufacturing good thermal conductive substrate
IN168174B (en) * 1986-04-22 1991-02-16 Siemens Ag
JP4015796B2 (en) * 1999-03-31 2007-11-28 Ｓｐｓシンテックス株式会社 Automatic pulse current pressure sintering method and system
DE10016129A1 (en) * 2000-03-31 2001-10-18 Siemens Ag Method for establishing a heat-conducting connection between two workpieces
DE60045389D1 (en) * 2000-10-20 2011-01-27 Mitsubishi Electric Corp COOLING DEVICE, SEMICONDUCTOR LASER LIGHT SOURCE DEVICE AND SEMICONDUCTOR LIGHT SOURCE SOURCE UNIT
US8087452B2 (en) * 2002-04-11 2012-01-03 Lytron, Inc. Contact cooling device
TWI284190B (en) * 2004-11-11 2007-07-21 Taiwan Microloops Corp Bendable heat spreader with metallic screens based micro-structure and method for fabricating same
DE102006003735A1 (en) * 2006-01-26 2007-08-09 Infineon Technologies Ag Arrangement for fixing electronic components on a support
DE202007007568U1 (en) * 2007-05-25 2007-09-20 Boston Cool Tec Corporation, Wilmington A flat heatpipe (heat pipe) and heat sink using them
DE102009000192A1 (en) * 2009-01-14 2010-07-15 Robert Bosch Gmbh Sintered material, sintered compound and method for producing a sintered compound
TW201043910A (en) * 2009-06-03 2010-12-16 High Conduction Scient Co Ltd Water-cooling device and its manufacturing method
JP2010286134A (en) * 2009-06-09 2010-12-24 Sony Corp Manufacturing method of heat transport device and heat transport device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851625A (en) * 2015-09-03 2018-03-27 大陆汽车有限公司 Cooling device, the method for producing cooling device and power circuit
CN107851625B (en) * 2015-09-03 2020-09-04 大陆汽车有限公司 Cooling device, method for producing a cooling device and power supply circuit
TWI749708B (en) * 2020-08-14 2021-12-11 大陸商廣州力及熱管理科技有限公司 A high-power vapor chamber structure manufacturing method

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