TW201422805A - Substrate cleaning method and cleaning liquid composition - Google Patents
Substrate cleaning method and cleaning liquid composition Download PDFInfo
- Publication number
- TW201422805A TW201422805A TW102136803A TW102136803A TW201422805A TW 201422805 A TW201422805 A TW 201422805A TW 102136803 A TW102136803 A TW 102136803A TW 102136803 A TW102136803 A TW 102136803A TW 201422805 A TW201422805 A TW 201422805A
- Authority
- TW
- Taiwan
- Prior art keywords
- cleaning
- substrate
- mass
- liquid composition
- cleaning liquid
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 119
- 239000000758 substrate Substances 0.000 title claims abstract description 83
- 239000007788 liquid Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000000203 mixture Substances 0.000 title claims abstract description 48
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims abstract description 13
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims abstract description 10
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 125000004084 sesquiterpene group Chemical group 0.000 claims 1
- 239000000126 substance Substances 0.000 description 15
- 239000003513 alkali Substances 0.000 description 11
- -1 polyoxymethylene Polymers 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 238000011109 contamination Methods 0.000 description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 150000004354 sesquiterpene derivatives Chemical group 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910000000 metal hydroxide Inorganic materials 0.000 description 4
- 150000004692 metal hydroxides Chemical class 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920006324 polyoxymethylene Polymers 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229930004725 sesquiterpene Natural products 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004088 foaming agent Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 125000003566 oxetanyl group Chemical group 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- FBCQUCJYYPMKRO-UHFFFAOYSA-N prop-2-enyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC=C FBCQUCJYYPMKRO-UHFFFAOYSA-N 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- RIWRBSMFKVOJMN-UHFFFAOYSA-N 2-methyl-1-phenylpropan-2-ol Chemical compound CC(C)(O)CC1=CC=CC=C1 RIWRBSMFKVOJMN-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical group C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- JSGRIFNBTXDZQU-UHFFFAOYSA-N C1(=CC=CC=C1)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(=CC=CC=C1)C(C(OC)(OC)OC)CCCCCCCC JSGRIFNBTXDZQU-UHFFFAOYSA-N 0.000 description 1
- LNEJJQMNHUGXDW-UHFFFAOYSA-N CC(C(OCC)(OCC)C)CCCCCCCC Chemical compound CC(C(OCC)(OCC)C)CCCCCCCC LNEJJQMNHUGXDW-UHFFFAOYSA-N 0.000 description 1
- HBOOXBWNADZQDD-UHFFFAOYSA-N COC(CCCCCCCCCCCCOC(C(=C)C)=O)(OC)OC Chemical compound COC(CCCCCCCCCCCCOC(C(=C)C)=O)(OC)OC HBOOXBWNADZQDD-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000011033 desalting Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- YDLYQMBWCWFRAI-UHFFFAOYSA-N hexatriacontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC YDLYQMBWCWFRAI-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical group CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 229940042596 viscoat Drugs 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002349 well water Substances 0.000 description 1
- 235000020681 well water Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明係關於一種附著於玻璃基板或矽晶圓等各種基板之聚有機矽氧烷之硬化物之清潔去除。 The present invention relates to the cleaning and removal of a cured product of a polyorganosiloxane which is attached to various substrates such as a glass substrate or a tantalum wafer.
通常，接著劑等中所含之附著於各種基板之含有聚矽氧之有機物或無機物可使用酸、鹼、有機溶劑等藥液而去除。例如，已知有使用苯、甲苯、二甲苯、烴、及醚等有機溶劑而去除有機物等，但硬化物之剝離性並不充分，又，存在如下情況：於剝離後產生之廢液中含有毒性較強之化合物或成為環境污染之原因之化合物。因此，作為先前之清潔液，主要使用氫氟酸鹽液或鹼金屬氫氧化物之溶液。然而，由於氫氟酸鹽會腐蝕玻璃，因此於用於玻璃基板時需要注意。因此，矽晶圓製造商或元件製造商為了去除附著於矽晶圓等基板之污染物，而進行各種清潔。例如，稱為RCA清潔(RCA clean)之具有代表性之清潔方法包含以下方法之組合：於將氨水、過氧化氫水及超純水之混合液(以下，有時稱為APM)加熱至60~90℃而去除矽晶圓上之微粒子或有機物後，將鹽酸、過氧化氫水及超純水之混合液(以下，有時稱為HPM)加熱至50~100℃而去除矽晶圓上之金屬雜質。又，將硫酸與過氧化氫水之混合液(以下，有時稱為SPM)加熱至80~150℃而成之清潔液可用於分解、去除抗蝕劑等有機物或者去除金屬雜質。 In general, an organic or inorganic substance containing polyoxymethylene attached to various substrates contained in an adhesive or the like can be removed using a chemical solution such as an acid, a base or an organic solvent. For example, it is known that an organic solvent such as benzene, toluene, xylene, a hydrocarbon, or an ether is used to remove an organic substance, but the peeling property of the cured product is not sufficient, and there is a case where the waste liquid generated after the peeling is contained. A highly toxic compound or a compound that causes environmental pollution. Therefore, as the previous cleaning liquid, a solution of a hydrofluoric acid solution or an alkali metal hydroxide is mainly used. However, since hydrofluoride can corrode glass, care must be taken when it is used for a glass substrate. Therefore, the wafer manufacturer or component manufacturer performs various cleaning in order to remove contaminants attached to substrates such as germanium wafers. For example, a representative cleaning method called RCA clean includes a combination of the following methods: heating a mixture of ammonia water, hydrogen peroxide water, and ultrapure water (hereinafter, sometimes referred to as APM) to 60. After removing the fine particles or organic matter on the germanium wafer at ~90 ° C, a mixture of hydrochloric acid, hydrogen peroxide water and ultrapure water (hereinafter sometimes referred to as HPM) is heated to 50 to 100 ° C to remove the germanium wafer. Metal impurities. Further, a cleaning liquid obtained by heating a mixed solution of sulfuric acid and hydrogen peroxide (hereinafter sometimes referred to as SPM) to 80 to 150 ° C can be used for decomposing and removing organic substances such as resist or removing metal impurities.
作為玻璃基板之清潔方法，於專利文獻1中，揭示有一種藉由利用經加熱之SPM清潔玻璃基板，而去除所附著之金屬或有機物的方 法。 As a method of cleaning a glass substrate, Patent Document 1 discloses a method of removing a metal or an organic substance attached by cleaning a glass substrate with a heated SPM. law.
另一方面，金屬氫氧化物之溶液通常存在如下問題：溶解力較弱，溶解後產生溶質之析出而再次附著於清潔後之基板表面。又，如專利文獻2所揭示，雖藉由進行強鹼清潔，可將牢固地附著於玻璃基板之硬化物溶解去除，但同時存在如下問題：玻璃基板表面亦因鹼而略微溶解，從而造成損傷。進而，於進行強鹼清潔之情形時，由於使用氫氧化鉀溶液或氫氧化鈉溶液等強鹼，因此對於用作半導體製造用途之無鹼玻璃基板等，該基板表面被鹼金屬污染，故而即便為低濃度，亦難以再利用藉由該等方法而再生之基板等。 On the other hand, the solution of the metal hydroxide usually has a problem that the dissolving power is weak, and after the dissolution, the solute is precipitated and adheres again to the surface of the substrate after cleaning. Further, as disclosed in Patent Document 2, the cured product firmly adhered to the glass substrate can be dissolved and removed by the strong alkali cleaning, but at the same time, the surface of the glass substrate is slightly dissolved by the alkali, thereby causing damage. . Further, in the case of performing a strong alkali cleaning, since a strong alkali such as a potassium hydroxide solution or a sodium hydroxide solution is used, the surface of the substrate is contaminated with an alkali metal for an alkali-free glass substrate used for semiconductor manufacturing, and so even At a low concentration, it is also difficult to reuse a substrate or the like which is regenerated by such methods.
作為不使用金屬氫氧化物之鹼性清潔液，市售有包含水溶性有機胺、及二甲基亞碸之類之有機溶劑之抗蝕劑用剝離液。作為具有相同性質之抗蝕劑用剝離液，於專利文獻4中，揭示有聚醯亞胺系硬化物之剝離方法，但由於為與水溶液之混合物，因此有溶液本身之親和性較差而成為低鹼濃度之傾向，從而存在無法充分地獲得剝離硬化物之能力之情況。對於含有大量二甲基亞碸之類之融點為室溫附近之極性溶劑之剝離液，其作為清潔液存在如下等問題：冬季保管於室外倉庫內時，會發生凍結而難以操作。亦未顯示對聚有機矽氧烷之硬化物之效果。 As an alkaline cleaning liquid which does not use a metal hydroxide, a peeling liquid for a resist containing an organic solvent such as a water-soluble organic amine and dimethyl hydrazine is commercially available. In the peeling liquid for resists having the same properties, Patent Document 4 discloses a peeling method of a polyimide-based cured product. However, since it is a mixture with an aqueous solution, the affinity of the solution itself is poor and becomes low. The tendency of the alkali concentration tends to be insufficient to obtain the ability to peel off the cured product. A peeling liquid containing a large amount of a dimethyl sulfoxide having a melting point of a polar solvent in the vicinity of room temperature has a problem as a cleaning liquid, and when it is stored in an outdoor warehouse in winter, it freezes and is difficult to handle. The effect on the cured product of polyorganosiloxane is also not shown.
又，有去除附著於各種基板之聚矽氧樹脂等之方法，但其幾乎皆以低分子矽氧烷或聚矽氧油等未硬化物為對象(專利文獻5~7)，對於硬化物，亦存在難以藉由RCA清潔等通常之方法而清潔之情形。例如，揭示有如專利文獻8所示之清潔具有水解性矽烷基之改性聚矽氧聚合物之方法，但於硬化前必須使其與清潔劑進行反應，而不適合去除完全硬化者。進而，硬化方法亦限定於濕氣硬化。除此以外，亦有如專利文獻9所示之使用氧電漿之去除方法，但該等方法存在必需大型裝置等問題。 In addition, there is a method of removing a polyoxymethylene resin or the like which adheres to various substrates, but it is almost always made of an unhardened material such as a low molecular weight siloxane or a polyoxygenated oil (Patent Documents 5 to 7). There are also cases where it is difficult to clean by a usual method such as RCA cleaning. For example, there is disclosed a method of cleaning a modified polyoxymethylene polymer having a hydrolyzable decyl group as shown in Patent Document 8, but it is necessary to react it with a detergent before hardening, and is not suitable for removing a completely hardened person. Further, the hardening method is also limited to moisture hardening. In addition to this, there is also a method of removing oxygen plasma as shown in Patent Document 9, but these methods have problems such as a large-sized apparatus.
進而，若限定於硬化物，則可使用利用氫氟酸等強酸或金屬氧化物等強鹼進行清潔之方法，故而會引起基板之損傷、腐蝕、污染等問題，可用作基板之構件受到限制。尤其是尚無可不對半導體用基板等之表面造成損傷、腐蝕、污染而簡便地去除牢固地附著之聚有機矽氧烷之硬化物的方法等，因此難以一次性地使附著有該等者再生。因此，若可將必需高潔淨性之半導體元件用基板等清潔、再生，則亦可關係到製造成本之削減。 Further, when it is limited to a cured product, a method of cleaning with a strong acid such as hydrofluoric acid or a strong alkali such as a metal oxide may be used, which may cause problems such as damage, corrosion, and contamination of the substrate, and the member used as the substrate may be restricted. . In particular, there is a method of easily removing the cured material of the polyorganosiloxane which is firmly adhered to the surface of the semiconductor substrate or the like, and it is difficult to regenerate the adhered one at a time. . Therefore, if the semiconductor element substrate or the like which is required to have high cleanliness can be cleaned and regenerated, the manufacturing cost can be reduced.
專利文獻1：日本專利特開平9-227170號公報 Patent Document 1: Japanese Patent Laid-Open No. Hei 9-227170
專利文獻2：日本專利特開平2-247650號公報 Patent Document 2: Japanese Patent Laid-Open No. Hei 2-247650
專利文獻3：日本專利特開2006-319282號公報 Patent Document 3: Japanese Patent Laid-Open No. 2006-319282
專利文獻4：日本專利特開2005-181802號公報 Patent Document 4: Japanese Patent Laid-Open Publication No. 2005-181802
專利文獻5：日本專利特開2008-127492號公報 Patent Document 5: Japanese Patent Laid-Open Publication No. 2008-127492
專利文獻6：日本專利特開2011-57777號公報 Patent Document 6: Japanese Patent Laid-Open No. 2011-57777
專利文獻7：日本專利特開2010-132713號公報 Patent Document 7: Japanese Patent Laid-Open Publication No. 2010-132713
專利文獻8：日本專利特開2002-35705號公報 Patent Document 8: Japanese Patent Laid-Open Publication No. 2002-35705
專利文獻9：日本專利特開2011-216542號公報 Patent Document 9: Japanese Patent Laid-Open Publication No. 2011-216542
本發明提供一種可不產生基板之損傷、腐蝕、污染而簡便地將附著於基板表面之聚有機矽氧烷之硬化物清潔去除，從而實現半導體用之各種基板之再生的該基板之清潔方法及清潔液組合物。 The present invention provides a cleaning method and cleaning method for cleaning and removing a cured material of a polyorganosiloxane which adheres to a surface of a substrate without causing damage, corrosion or contamination of the substrate, thereby realizing regeneration of various substrates for semiconductors. Liquid composition.
本發明者等人為了提高先前之基板清潔技術而進行了銳意研究，結果發現：藉由使用相對於清潔液組合物之總質量，含有氫氧化 四烷基銨1~20質量%、醇20~98質量%、及N-甲基吡咯啶酮1~79質量%之清潔液組合物，可不產生損傷、腐蝕、污染而清潔基板表面，去除所附著之聚有機矽氧烷之硬化物，從而完成本發明。 The inventors of the present invention conducted intensive studies to improve the previous substrate cleaning technique, and as a result, found that by using a hydroxide relative to the total mass of the cleaning liquid composition, A cleaning liquid composition of 1 to 20% by mass of tetraalkylammonium, 20 to 98% by mass of alcohol, and 1 to 79% by mass of N-methylpyrrolidone can clean the surface of the substrate without causing damage, corrosion or contamination, and remove the surface. The cured product of the attached polyorganosiloxane is used to complete the present invention.
即，本發明包括以下發明1至7。 That is, the present invention includes the following inventions 1 to 7.
一種清潔方法，其係用以去除附著於基板表面之聚有機矽氧烷之硬化物者，且包括如下步驟：使清潔液組合物與基板表面接觸，該清潔液組合物相對於清潔液組合物之總質量，含有烷基之碳數為1~4之氫氧化四烷基銨1~20質量%、碳數1~5之醇20~98質量%、及N-甲基吡咯啶酮1~79質量%。 A cleaning method for removing a cured material of a polyorganosiloxane which adheres to a surface of a substrate, and comprising the steps of: contacting a cleaning liquid composition with a surface of the substrate, the cleaning liquid composition being relative to the cleaning liquid composition The total mass is 1 to 20% by mass of a tetraalkylammonium hydroxide having an alkyl group of 1 to 4, 20 to 98% by mass of an alcohol having 1 to 5 carbon atoms, and N-methylpyrrolidone 1~ 79% by mass.
如發明1之清潔方法，其中使清潔液組合物於20~120℃下與基板表面接觸。 The cleaning method according to Invention 1, wherein the cleaning liquid composition is brought into contact with the surface of the substrate at 20 to 120 °C.
如發明1或2之清潔方法，其進而包括使含有硫酸之清潔液與基板表面接觸之步驟。 A cleaning method according to Invention 1 or 2, which further comprises the step of bringing the cleaning liquid containing sulfuric acid into contact with the surface of the substrate.
如發明1至3中任一項之清潔方法，其進而包括於利用水進行清潔後將基板乾燥之步驟。 The cleaning method according to any one of Inventions 1 to 3, which further comprises the step of drying the substrate after cleaning with water.
如發明1至4中任一項之清潔方法，其中基板為玻璃基板或矽晶圓。 The cleaning method according to any one of Inventions 1 to 4, wherein the substrate is a glass substrate or a germanium wafer.
如發明1至5中任一項之清潔方法，其中聚有機矽氧烷之硬化物具有籠形倍半矽氧烷結構。 The cleaning method according to any one of Inventions 1 to 5, wherein the hardened polyorganosiloxane has a cage sesquiterpene structure.
一種清潔液組合物，其相對於清潔液組合物之總質量，含有包含碳數1~4之烷基之氫氧化四烷基銨1~20質量%、碳數1~5之醇20~98質量%、及N-甲基吡咯啶酮1~79質量%。 A cleaning liquid composition containing 1 to 20% by mass of a tetraalkylammonium hydroxide containing an alkyl group having 1 to 4 carbon atoms and an alcohol 20 to 98 having a carbon number of 1 to 5, based on the total mass of the cleaning liquid composition. % by mass and N-methylpyrrolidone 1 to 79% by mass.
根據本發明之清潔方法，可不進行難以操作之利用氫氟酸之清潔或使用金屬氫氧化物等之強鹼清潔，而有效地將牢固地附著於包括玻璃基板或矽晶圓在內之各種基板表面之聚有機矽氧烷之硬化物清潔去除，亦可防止去除物之殘渣之再附著。又，由於清潔後之基板表面無損傷、腐蝕、污染，因此可實現基板之再生。進而，由於不使用氫氟酸等具有較強之腐蝕性之藥液，因此操作性較好，亦無需耗費成本之設備。尤其是幾乎不可能因鹼成分而引起污染，故而可實現高潔淨之基板之清潔、再生，亦可關係到成本之削減。因此，本發明之清潔方法於半導體元件之製造方面極其有用。 According to the cleaning method of the present invention, it is possible to effectively adhere to various substrates including a glass substrate or a tantalum wafer without performing difficult cleaning using hydrofluoric acid or using a strong alkali cleaning such as metal hydroxide. The hardening of the polyorganosiloxane on the surface is cleaned and removed, and the reattachment of the residue of the removed product is also prevented. Moreover, since the surface of the substrate after cleaning is free from damage, corrosion, and contamination, the substrate can be regenerated. Further, since a highly corrosive chemical liquid such as hydrofluoric acid is not used, the operability is good, and there is no need for costly equipment. In particular, it is almost impossible to cause contamination due to an alkali component, so that cleaning and regeneration of a highly clean substrate can be achieved, and the cost can be reduced. Therefore, the cleaning method of the present invention is extremely useful in the manufacture of semiconductor elements.
以下，詳細地對本發明進行說明。 Hereinafter, the present invention will be described in detail.
所謂本發明中之清潔液組合物，意指分別含有特定量之氫氧化四烷基銨、醇、及N-甲基吡咯啶酮的供以去除附著於基板表面之聚有機矽氧烷之硬化物的清潔液。 The cleaning liquid composition of the present invention means that a specific amount of tetraalkylammonium hydroxide, an alcohol, and N-methylpyrrolidone are respectively contained to remove the hardening of the polyorganosiloxane which adheres to the surface of the substrate. Cleaning solution for the object.
本發明所使用之氫氧化四烷基銨係鍵結於氫氧化銨之氮原子之四個氫原子全部經烷基取代而成之化合物。該氫原子可分別經相同之烷基取代，或者亦可經不同之複數種烷基取代。又，該氫氧化四烷基銨亦可為水合物。 The tetraalkylammonium hydroxide used in the present invention is a compound in which all of the four hydrogen atoms of the nitrogen atom of ammonium hydroxide are substituted with an alkyl group. The hydrogen atom may be substituted by the same alkyl group, or may be substituted with a plurality of different alkyl groups. Further, the tetraalkylammonium hydroxide may also be a hydrate.
作為烷基，可使用碳數為1~4、較佳為1~3之烷基。具體而言，可列舉：甲基、乙基、丙基、異丙基、正丁基等。 As the alkyl group, an alkyl group having 1 to 4 carbon atoms, preferably 1 to 3 carbon atoms can be used. Specific examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, and an n-butyl group.
作為此種氫氧化四烷基銨之具體例，可列舉：氫氧化四甲基 銨、氫氧化四乙基胺、氫氧化四正丁基銨、氫氧化二甲基二乙基銨等。於本發明中，就獲取之容易性或經濟性而言，較佳為使用氫氧化四甲基銨。又，該等可單獨使用，或者亦可組合兩種以上使用。 Specific examples of such tetraalkylammonium hydroxide include tetramethyl hydroxide. Ammonium, tetraethylamine hydroxide, tetra-n-butylammonium hydroxide, dimethyldiethylammonium hydroxide, and the like. In the present invention, tetramethylammonium hydroxide is preferably used in terms of ease of availability or economy. Further, these may be used singly or in combination of two or more.
作為本發明中所使用之醇，可使用碳數為1~5之低級醇。具體而言，可列舉：甲醇、乙醇、1-丙醇、異丙醇、1-丁醇、1-戊醇等。於本發明中，就操作性或安全性之方面而言，較佳為使用異丙醇。該等醇可單獨使用或者組合兩種以上使用。 As the alcohol used in the present invention, a lower alcohol having a carbon number of 1 to 5 can be used. Specific examples thereof include methanol, ethanol, 1-propanol, isopropanol, 1-butanol, and 1-pentanol. In the present invention, isopropyl alcohol is preferably used in terms of operability or safety. These alcohols may be used singly or in combination of two or more.
以下對本發明中之清潔液組合物說明各成分之含量。 The content of each component will be described below for the cleaning liquid composition of the present invention.
氫氧化四烷基銨較理想為於本發明之清潔液組合物100質量%中，含有1~20質量%、較佳為3~15質量%、進而較佳為5~10質量%之量。於氫氧化四烷基銨之含量未達1質量%之情形時，清潔能力較低，另一方面，若超過20質量%，則存在所獲得之清潔液組合物腐蝕基板或所鍍敷之金屬等之情況。 The tetraalkylammonium hydroxide is preferably contained in an amount of 1 to 20% by mass, preferably 3 to 15% by mass, and more preferably 5 to 10% by mass, based on 100% by mass of the cleaning liquid composition of the present invention. When the content of the tetraalkylammonium hydroxide is less than 1% by mass, the cleaning ability is low. On the other hand, if it exceeds 20% by mass, the obtained cleaning liquid composition corrodes the substrate or the plated metal. Waiting for the situation.
醇較理想為於本發明之清潔液組合物100質量%中，含有20~98質量%、較佳為30~60質量%、進而較佳為35~55質量%之量。於醇之含量未達20質量%之情形時，存在如下情況：氫氧化四烷基銨相對於清潔液之溶解性降低，清潔液變得不均勻。另一方面，若超過98質量%，則存在如下情況：由於相對地清潔液組合物中可含有之鹼濃度過度降低，因此無法獲得充分之清潔能力。 The amount of the alcohol is preferably from 20 to 98% by mass, preferably from 30 to 60% by mass, and more preferably from 35 to 55% by mass, based on 100% by mass of the cleaning liquid composition of the present invention. When the content of the alcohol is less than 20% by mass, there is a case where the solubility of the tetraalkylammonium hydroxide with respect to the cleaning liquid is lowered, and the cleaning liquid becomes uneven. On the other hand, when it exceeds 98% by mass, there is a case where the alkali concentration which can be contained in the relatively cleansing liquid composition is excessively lowered, so that sufficient cleaning ability cannot be obtained.
N-甲基吡咯啶酮較理想為於本發明之清潔液組合物100質量%中，含有1~79質量%、較佳為10~70質量%、進而較佳為20~60質量%之量。若N-甲基吡咯啶酮之含量未達10質量%，則存在如下情況：無法充分地溶解自基板剝離之抗蝕劑之硬化物片，而於基板產生未溶解之硬化物片之再附著。另一方面，若超過79質量%，則存在如下情況：由於清潔液組合物中可含有之鹼成分之濃度過度降低，因此無法充分獲得將硬化物自基板去除之能力。 The N-methylpyrrolidone is preferably contained in an amount of from 1 to 79% by mass, preferably from 10 to 70% by mass, and more preferably from 20 to 60% by mass, based on 100% by mass of the cleaning liquid composition of the present invention. . When the content of the N-methylpyrrolidone is less than 10% by mass, the cured sheet of the resist which is peeled off from the substrate may not be sufficiently dissolved, and the undissolved cured sheet may be reattached to the substrate. . On the other hand, when it exceeds 79% by mass, the concentration of the alkali component which can be contained in the cleaning liquid composition is excessively lowered, so that the ability to remove the cured product from the substrate cannot be sufficiently obtained.
如上所述，本發明之清潔液組合物之基本組成包含氫氧化四烷基銨、醇及N-甲基吡咯啶酮，亦可於不妨礙本發明之作用效果之範圍內，根據各種目的而添加螯合劑、陰離子界面活性劑、兩性界面活性劑、氟系界面活性劑、溶劑、pH值調整劑、消泡劑、發泡劑、二醇醚類、防腐劑、抗氧化劑、無機鹽、分散劑等其他成分。 As described above, the basic composition of the cleaning liquid composition of the present invention comprises tetraalkylammonium hydroxide, an alcohol, and N-methylpyrrolidone, and may be used for various purposes within a range not inhibiting the effects of the present invention. Adding chelating agent, anionic surfactant, amphoteric surfactant, fluorine-based surfactant, solvent, pH adjuster, antifoaming agent, foaming agent, glycol ether, preservative, antioxidant, inorganic salt, dispersion Other ingredients such as agents.
作為本發明之清潔對象之基板無特別限定，通常較佳為供半導體元件之製造者，尤佳為玻璃基板或矽晶圓。 The substrate to be cleaned by the present invention is not particularly limited, and is generally preferably a manufacturer of a semiconductor element, and more preferably a glass substrate or a germanium wafer.
以下表示作為藉由本發明之清潔方法而去除之對象的聚有機矽氧烷之硬化物之例，但並不限定於此。 The example of the cured product of the polyorganosiloxane which is the object to be removed by the cleaning method of the present invention is shown below, but is not limited thereto.
例如可列舉下述式(1)所示之藉由使具有光聚合性基之籠形倍半矽氧烷光聚合而獲得的接著性聚有機矽氧烷之硬化物。該聚有機矽氧烷之硬化物實質上維持原本之籠形倍半矽氧烷結構。 For example, a cured product of an adhesive polyorganosiloxane obtained by photopolymerization of a cage-shaped sesquiterpene oxide having a photopolymerizable group represented by the following formula (1) can be mentioned. The cured product of the polyorganooxane substantially maintains the original cage sesquiterpene structure.
式(1)中，A分別獨立為含有光聚合性基或不含有光聚合性基之有機基，含有光聚合性基之有機基之個數X為1~8，不含有光聚合性基之有機基之個數Y為0~7，X與Y之和為8。光聚合性基表示丙烯醯基、甲基丙烯醯基、芳基、環氧基、氧雜環丁烷基及乙烯醚基。 In the formula (1), each A is independently an organic group containing a photopolymerizable group or a photopolymerizable group, and the number X of the organic group containing a photopolymerizable group is 1 to 8, and does not contain a photopolymerizable group. The number Y of organic groups is 0 to 7, and the sum of X and Y is 8. The photopolymerizable group means an acrylonitrile group, a methacryl fluorenyl group, an aryl group, an epoxy group, an oxetanyl group, and a vinyl ether group.
該硬化物係藉由對該接著性聚有機矽氧烷進行紫外線照射而形成。 The cured product is formed by ultraviolet irradiation of the adhesive polyorganosiloxane.
作為相同之接著性聚有機矽氧烷之硬化物，亦可列舉包含具有光聚合性基之烷氧基矽烷之水解縮合物的改性聚有機矽氧烷之硬化物。該硬化物係分別使用至少一種以上之以下通式(2)或(3)所表示之烷氧基矽烷進行水解縮合而獲得之縮合物。 A cured product of a modified polyorganosiloxane containing a hydrolysis condensate of alkoxysilane having a photopolymerizable group may also be mentioned as a cured product of the same adhesive polyorganosiloxane. The cured product is a condensate obtained by hydrolytic condensation of at least one alkoxysilane represented by the following general formula (2) or (3).
[化2](R1)XSi(OR2)4-X (2) [Chemical 2] (R 1 ) X Si(OR 2 ) 4-X (2)
式(2)中，R1分別獨立為甲基或苯基，R2分別獨立為甲基或乙基，X為0~3之整數。 In the formula (2), R 1 is each independently a methyl group or a phenyl group, and R 2 is independently a methyl group or an ethyl group, and X is an integer of 0 to 3.
[化3](R3)XSi(OR4)4-X (3) [Chemical 3] (R 3 ) X Si(OR 4 ) 4-X (3)
式(3)中，R3分別獨立為選自由丙烯醯基、甲基丙烯醯基、芳基、環氧基、氧雜環丁烷基及乙烯醚基所組成之群中之至少一種基，R4分別獨立為甲基或乙基，X為1~3之整數。 In the formula (3), R 3 is each independently at least one selected from the group consisting of an acryloyl group, a methacryloyl group, an aryl group, an epoxy group, an oxetanyl group, and a vinyl ether group. R 4 is independently a methyl group or an ethyl group, and X is an integer of 1 to 3.
可認為，例如由式(2)所表示之作為烷氧基矽烷之苯基三甲氧基矽烷(R1=苯基，R2=甲基，X=1)或二甲基二乙氧基矽烷(R1=甲基，R2=乙基，X=2)、及式(3)所表示之作為烷氧基矽烷之甲基丙烯酸3-(三甲氧基矽烷基)丙酯(R3=甲基丙烯酸丙酯基，R4=甲基，X=1)獲得之水解縮合物具有以下所示之部分結構。再者，圖中之波浪線意指其前端亦連接有鍵。 It is considered, for example, that phenyltrimethoxydecane (R 1 =phenyl group, R 2 =methyl group, X=1) or dimethyldiethoxydecane represented by the formula (2) as an alkoxydecane. (R 1 =methyl, R 2 =ethyl, X=2), and 3-(trimethoxydecyl)propyl methacrylate as alkoxydecane represented by formula (3) (R 3 = The hydrolysis condensate obtained by the propyl methacrylate group, R 4 = methyl group, X = 1) has a partial structure shown below. Furthermore, the wavy line in the figure means that the front end is also connected with a key.
[化4]
關於作為藉由本發明之清潔方法而去除之對象之聚有機矽氧烷之硬化物，其結構無特別限制，亦包括：未改性之聚有機矽氧烷之硬化物；及由具有環氧基、胺基、羥基、丙烯醯基、甲基丙烯醯基等官能基之有機改性矽氧烷化合物獲得之聚有機矽氧烷之硬化物。於聚有機矽氧烷中，亦可調配聚合觸媒、接著賦予劑、填充劑、補強劑、色素、阻燃劑、抗氧化劑、紫外線吸收劑、發泡劑等各種添加劑。又，該組合物之形狀可為一液硬化型、二液硬化型、接著性片材等，可使用室溫硬化、加熱硬化、光硬化等任一種硬化方法。 Regarding the cured product of the polyorganosiloxane which is the object to be removed by the cleaning method of the present invention, the structure thereof is not particularly limited, and includes: a cured product of an unmodified polyorganosiloxane; and an epoxy group having A cured product of a polyorganosiloxane obtained from an organic modified siloxane compound having a functional group such as an amine group, a hydroxyl group, an acryl fluorenyl group or a methacryl fluorenyl group. In the polyorganosiloxane, various additives such as a polymerization catalyst, a subsequent imparting agent, a filler, a reinforcing agent, a coloring matter, a flame retardant, an antioxidant, an ultraviolet absorber, and a foaming agent may be blended. Further, the shape of the composition may be a one-liquid curing type, a two-liquid curing type, an adhesive sheet or the like, and any curing method such as room temperature curing, heat curing, or light curing may be used.
另外，除了應用於市售之聚矽氧樹脂或一般之接著劑用樹脂狀污垢之清潔以外，亦可作為抗蝕劑剝離液而應用於含有無機微粒子之污垢之清潔。 Further, in addition to the cleaning of a commercially available polyoxyxylene resin or a resinous soil for a general adhesive, it can be applied as a resist stripping liquid to the cleaning of soil containing inorganic fine particles.
使用有本發明之清潔液組合物之清潔方法無特別限定，例如可列舉：將基板浸漬於收納有清潔液組合物之浸漬槽中之浸漬式清潔；藉由噴淋、噴霧、及/或噴射等而使清潔液流動之淋浴法；使用海棉或毛刷等之洗擦清潔法；對浸漬式清潔施加超音波而提高清潔效率之超音波清潔法；起泡清潔法等。 The cleaning method using the cleaning liquid composition of the present invention is not particularly limited, and examples thereof include immersion cleaning in which a substrate is immersed in a dipping tank containing a cleaning liquid composition; by spraying, spraying, and/or spraying a shower method in which a cleaning liquid flows, a cleaning method using a sponge or a brush, an ultrasonic cleaning method in which ultrasonic waves are applied to an immersion cleaning, and a cleaning method such as a foam cleaning method.
以下敍述本發明中之清潔步驟之一例。使經加熱之清潔液組合物與該基板接觸，並藉由上述清潔方法進行清潔之後，進行1分鐘以上超純水沖洗以沖去附著於基板表面之藥液成分之大部分，並使其乾燥。其後，利用含有硫酸之水溶液清潔該基板，與前步驟相同地進行 超純水沖洗，並使其乾燥。利用含有硫酸之水溶液之清潔方法無特別限制，可使用通常之SPM清潔中所進行之方法。藉由併用該步驟，可去除殘留於該基板表面之微量之鹼成分。 An example of the cleaning step in the present invention will be described below. After the heated cleaning liquid composition is brought into contact with the substrate and cleaned by the above cleaning method, the ultrapure water is rinsed for 1 minute or more to wash away most of the chemical components adhering to the surface of the substrate, and dried. . Thereafter, the substrate is cleaned with an aqueous solution containing sulfuric acid, and is carried out in the same manner as in the previous step. Rinse with ultrapure water and allow to dry. The cleaning method using the aqueous solution containing sulfuric acid is not particularly limited, and the method carried out in the usual SPM cleaning can be used. By using this step in combination, a trace amount of the alkali component remaining on the surface of the substrate can be removed.
使本發明之清潔液組合物與該基板接觸時之溫度較理想的是較佳為20~120℃，更佳為40~100℃。於清潔液組合物之溫度未達20℃之情形時，將硬化物自基板剝離之速度較慢而不實用。又，若清潔液組合物之溫度超過120℃，則存在清潔液組合物中所含之醇之蒸發較激烈，清潔性能降低之情況。 The temperature at which the cleaning liquid composition of the present invention is brought into contact with the substrate is preferably from 20 to 120 ° C, more preferably from 40 to 100 ° C. When the temperature of the cleaning liquid composition is less than 20 ° C, the speed at which the cured product is peeled off from the substrate is slow and not practical. Further, when the temperature of the cleaning liquid composition exceeds 120 ° C, there is a case where the evaporation of the alcohol contained in the cleaning liquid composition is severe and the cleaning performance is lowered.
又，本發明之清潔方法亦可與通常半導體製造步驟中所進行之清潔方法，即如RCA清潔之組合有以下方法之清潔方法進行組合：將APM加熱至60~90℃而進行清潔之方法、將HPM加熱至50~100℃而進行清潔之方法、及將SPM加熱至80~150℃而進行清潔之方法等。 Moreover, the cleaning method of the present invention can also be combined with a cleaning method generally performed in a semiconductor manufacturing step, that is, a combination method such as RCA cleaning, which has the following method: a method of heating APM to 60 to 90 ° C for cleaning, A method in which HPM is heated to 50 to 100 ° C for cleaning, and a method in which SPM is heated to 80 to 150 ° C for cleaning.
本發明中之含有硫酸之水溶液亦可含有過氧化氫，作為較佳者，可列舉用於去除抗蝕劑等有機物或金屬雜質之SPM。SPM清潔係將SPM加熱而進行。清潔條件並無特別限定，一般經常使用之組成係硫酸與過氧化氫水之體積比為4：1至8：1之範圍，清潔溫度為80~150℃之範圍即足夠。 The aqueous solution containing sulfuric acid in the present invention may contain hydrogen peroxide, and preferably SPM for removing organic substances such as a resist or metal impurities. The SPM cleaning system performs the heating of the SPM. The cleaning conditions are not particularly limited. Generally, the composition ratio of sulfuric acid to hydrogen peroxide water is in the range of 4:1 to 8:1, and the cleaning temperature is in the range of 80 to 150 °C.
本發明中所使用之硫酸及過氧化氫等藥品之品質較理想為具有儘可能高之純度以避免因該藥品中之雜質而使玻璃基板受到污染之不良狀況，具體而言，較理想為使用電子工業用等級之藥品。 The quality of a chemical such as sulfuric acid or hydrogen peroxide used in the present invention is desirably such that the purity is as high as possible to avoid contamination of the glass substrate due to impurities in the drug. Specifically, it is preferably used. A graded drug for the electronics industry.
作為本發明所使用之水，可列舉：城市用水、井水、純水(藉由離子交換樹脂等進行脫鹽處理而成之水)、超純水(不僅去除無機離子，而且去除有機物、活菌、微粒子、溶存氣體等而成之水)、各種功能水等，就對電子控制電路等造成不良影響之金屬離子成分之含量較少之方面而言，較佳為純水或超純水等。 Examples of the water used in the present invention include municipal water, well water, pure water (water obtained by desalting by ion exchange resin, etc.), and ultrapure water (not only removing inorganic ions but also removing organic matter and living bacteria). In the case where the content of the metal ion component which adversely affects the electronic control circuit or the like is small, it is preferably pure water or ultrapure water.
以下，根據實施例具體地對本發明進行說明，但本發明並不限定於該等。 Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited thereto.
首先，為了再現牢固地附著於基板表面之聚有機矽氧烷之硬化物，製備接著性聚有機矽氧烷組合物。其後，使該組合物於基板上硬化，藉此於基板上形成、附著硬化物。將其用作樣本基板，而對本發明之清潔方法之清潔性進行評價。 First, in order to reproduce a cured product of a polyorganosiloxane which is firmly attached to the surface of a substrate, an adhesive polyorganosiloxane composition is prepared. Thereafter, the composition is cured on the substrate to form and adhere a cured product on the substrate. This was used as a sample substrate to evaluate the cleanability of the cleaning method of the present invention.
以下依序對各步驟進行說明。 The steps are described in order below.
於100ml茄形燒瓶中，添加八(二甲基矽烷基)八倍半矽氧烷(美國Hybrid Plastics公司製造，商品名為SH1310)5.13g、甲基丙烯酸烯丙酯5.40g(東京化成股份有限公司製造)、甲苯50ml、及作為鉑觸媒之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷鉑(0)錯合物之二甲苯溶液(鉑濃度為2質量%)(Aldrich股份有限公司製造)15mg，並於室溫(23℃)下攪拌整夜(24小時)。其後，使用旋轉蒸發器而蒸餾去除甲苯及未反應之甲基丙烯酸烯丙酯，而以淺黃色之液體獲得含有甲基丙烯醯基之籠形倍半矽氧烷8.8g。 In a 100 ml eggplant-shaped flask, octadecyl octadecane oxide (manufactured by Hybrid Plastics, USA, trade name: SH1310), 5.13 g, and allyl methacrylate 5.40 g were added (Tokyo Chemical Co., Ltd.) Manufactured by the company, 50 ml of toluene, and a xylene solution of platinum 1,3-divinyl-1,1,3,3-tetramethyldioxane platinum (0) complex (platinum concentration) 2 mg%) (manufactured by Aldrich Co., Ltd.) 15 mg, and stirred at room temperature (23 ° C) overnight (24 hours). Thereafter, toluene and unreacted allyl methacrylate were distilled off using a rotary evaporator, and 8.8 g of cage sesquiterpene containing methacryl fluorenyl group was obtained as a pale yellow liquid.
相對於該籠形倍半矽氧烷100份，添加季戊四醇三丙烯酸酯(大阪有機化學工業股份有限公司製造，商品名為Viscoat#300)20份，並添加光自由基聚合起始劑(Ciba Speciality Chemicals股份有限公司製造，商品名為Darocur 1173)2份，而獲得接著性聚有機矽氧烷組合物。 20 parts of pentaerythritol triacrylate (manufactured by Osaka Organic Chemical Industry Co., Ltd., trade name Viscoat #300) was added to 100 parts of the cage sesquioxane, and a photoradical polymerization initiator (Ciba Speciality) was added. 2 parts, manufactured by Chemicals, Inc., under the trade name Darocur 1173), to obtain an adhesive polyorganosiloxane composition.
於利用氧化鈰(Aldrich股份有限公司製造)之微粒子研磨表面而成之100mm、厚1.1mm之無鹼玻璃基板(康寧股份有限公司製造，商 品編號為7059)之基板表面，藉由旋轉塗佈機將上述各接著性組合物0.6g塗佈為約50μm之厚度，並藉由紫外線照射機(HOYA-SCHOTT製造，商品名為UV LIGHT SOURCE EX250)照射5分鐘紫外線，使接著性組合物層硬化。繼而，於加熱板上自室溫緩慢地升溫至150℃，其後加熱約1小時，而於該無鹼玻璃基板表面形成接著劑層。將其作為樣本基板，並用於下述清潔性評價。 Grinding the surface with fine particles of cerium oxide (made by Aldrich Co., Ltd.) The surface of the substrate of a 100 mm thick 1.1 mm thick alkali-free glass substrate (manufactured by Corning Incorporated, product number 7059) was coated with 0.6 g of each of the above-mentioned adhesive compositions to a thickness of about 50 μm by a spin coater. The ultraviolet ray irradiator (manufactured by HOYA-SCHOTT, trade name: UV LIGHT SOURCE EX250) was irradiated with ultraviolet rays for 5 minutes to cure the adhesive composition layer. Then, the temperature was slowly raised from room temperature to 150 ° C on a hot plate, followed by heating for about 1 hour to form an adhesive layer on the surface of the alkali-free glass substrate. This was used as a sample substrate and used for the following cleanability evaluation.
為了對清潔性進行評價，將表1(實施例1~9及比較例1~11)所示之各成分按照所記載之質量份進行調配，而製成清潔液組合物。將各清潔液組合物約300ml放入聚四氟乙烯樹脂製浸漬槽中，並加溫至表1中所記載之溫度。將該樣本基板浸漬於其中，一面使用磁力攪拌器及磁力攪拌子攪拌清潔液，一面保持該狀態12分鐘~9小時。繼而，利用純水進行1分鐘沖洗處理，並使其乾燥。其後，將其浸漬於硫酸及過氧化氫(4：1)之混合液中，並加溫至90℃，一面攪拌清潔液，一面保持該狀態1小時。最後，利用純水進行1分鐘沖洗處理，並使其充分乾燥，藉由光學顯微鏡而觀察該玻璃基板表面。 In order to evaluate the cleanability, each component shown in Table 1 (Examples 1 to 9 and Comparative Examples 1 to 11) was prepared in accordance with the stated mass parts to prepare a cleaning liquid composition. About 300 ml of each cleaning liquid composition was placed in a immersion tank made of a polytetrafluoroethylene resin, and heated to the temperature shown in Table 1. The sample substrate was immersed therein, and the cleaning liquid was stirred with a magnetic stirrer and a magnetic stirrer while maintaining the state for 12 minutes to 9 hours. Then, it was rinsed with pure water for 1 minute and allowed to dry. Thereafter, this was immersed in a mixed liquid of sulfuric acid and hydrogen peroxide (4:1), and the mixture was heated to 90 ° C, and the cleaning liquid was stirred while maintaining the state for 1 hour. Finally, it was rinsed with pure water for 1 minute, and sufficiently dried, and the surface of the glass substrate was observed by an optical microscope.
將結果示於表1。再者，玻璃基板表面之狀態之評價標準如下所述。 The results are shown in Table 1. Furthermore, the evaluation criteria of the state of the surface of the glass substrate are as follows.
◎：無附著物及再附著，亦無損傷、腐蝕及污點。 ◎: No attachment and re-adhesion, no damage, corrosion and stains.
○：無損傷、腐蝕及污點，但去除物未溶解而發現有再附著。 ○: No damage, corrosion, and stains were observed, but the removed material was not dissolved and found to be reattached.
△：產生損傷、腐蝕或污點。 △: Damage, corrosion or stains are generated.
×：無法去除附著物。 ×: The attached matter could not be removed.
(關於清潔性良好之實施例1~9，重複進行三次接著、剝離、清潔之循環) (Regarding Examples 1 to 9 with good cleanability, repeating the cycle of three subsequent steps, peeling, and cleaning)
根據表1之結果，確認到本發明之清潔方法對聚有機矽氧烷之硬化物顯示優異之清潔性，進而未發現基板表面之損傷、腐蝕、污染等問題。 From the results of Table 1, it was confirmed that the cleaning method of the present invention exhibited excellent cleanability to the cured product of polyorganosiloxane, and further problems such as damage, corrosion, and contamination of the surface of the substrate were not observed.
可知，尤其是於實施例3~9中，由於藉由將清潔液加溫而提高溶液之剝離性及溶解性，因此亦可縮短清潔時間。又，可確認，於實施例4、6中，不僅對玻璃基板，而且對矽晶圓亦顯示相同之清潔性。於實施例1~9中，使用相同之玻璃基板，藉由相同之步驟重複進行三次進行接著、剝離及清潔之一連串之循環，結果未發現該基板表面之損傷、腐蝕、污染等問題。 In particular, in Examples 3 to 9, in particular, since the cleaning property was heated to improve the peelability and solubility of the solution, the cleaning time was also shortened. Further, it was confirmed that in Examples 4 and 6, the same cleanability was exhibited not only for the glass substrate but also for the germanium wafer. In Examples 1 to 9, the same glass substrate was used, and the series of subsequent steps of peeling, peeling, and cleaning was repeated three times in the same procedure. As a result, problems such as damage, corrosion, and contamination of the surface of the substrate were not observed.
另一方面，於比較例1、2及11中，溶液對硬化物之溶解性較低，發現去除物之再附著。於比較例3中，由於對有機物之親和性較差，進而亦缺乏對硬化物之溶解性，故而無法去除所接著之硬化物。於比較例4中，雖顯示金屬氫氧化物溶液可於某程度上剝離牢固地接著之硬化物，但產生了玻璃基板之污點。於比較例9中，顯示若使用強力之酸清潔液，則發現基板之腐蝕等。於比較例10中，顯示若利用SPM進行清潔，則幾乎未剝離聚有機矽氧烷之硬化物。 On the other hand, in Comparative Examples 1, 2 and 11, the solubility of the solution to the cured product was low, and the reattachment of the removed matter was found. In Comparative Example 3, since the affinity for the organic substance was inferior and the solubility to the cured product was also lacking, the cured product could not be removed. In Comparative Example 4, although the metal hydroxide solution was peeled off to some extent, the cured material was firmly adhered, but stains on the glass substrate were generated. In Comparative Example 9, it was revealed that if a strong acid cleaning liquid was used, corrosion of the substrate or the like was observed. In Comparative Example 10, it was shown that if the cleaning was carried out by SPM, the cured product of the polyorganosiloxane was hardly peeled off.
根據本發明之基板之清潔方法，可將必需高潔淨性之半導體元件用玻璃基板等清潔、再生，於半導體製造步驟中可廣泛地利用。 According to the method for cleaning a substrate of the present invention, a semiconductor element which is required to have high cleanliness can be cleaned and regenerated with a glass substrate or the like, and can be widely used in the semiconductor manufacturing step.
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012225597 | 2012-10-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201422805A true TW201422805A (en) | 2014-06-16 |
Family
ID=50477327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102136803A TW201422805A (en) | 2012-10-11 | 2013-10-11 | Substrate cleaning method and cleaning liquid composition |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2014057860A1 (en) |
| TW (1) | TW201422805A (en) |
| WO (1) | WO2014057860A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107312650A (en) * | 2016-04-26 | 2017-11-03 | 信越化学工业株式会社 | The preparation of cleanser compositions and thin substrate |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6329889B2 (en) * | 2014-12-11 | 2018-05-23 | 信越化学工業株式会社 | Cleaning liquid and coating film forming apparatus piping cleaning method |
| JP2023174600A (en) * | 2022-05-27 | 2023-12-07 | 花王株式会社 | Cleaner composition for adhesive |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60247928A (en) * | 1984-05-23 | 1985-12-07 | Seiko Instr & Electronics Ltd | Cleaning method of semiconductor substrate |
| JP2009075285A (en) * | 2007-09-20 | 2009-04-09 | Fujifilm Corp | Stripper for semiconductor device and stripping method |
| JP2009073078A (en) * | 2007-09-21 | 2009-04-09 | Fujifilm Corp | Curable composition for photo-nanoimprint and member for liquid crystal display using the same |
| JP5404459B2 (en) * | 2010-02-08 | 2014-01-29 | 東京応化工業株式会社 | Lithographic cleaning liquid and wiring forming method |
-
2013
- 2013-10-03 WO PCT/JP2013/076939 patent/WO2014057860A1/en active Application Filing
- 2013-10-03 JP JP2014540820A patent/JPWO2014057860A1/en active Pending
- 2013-10-11 TW TW102136803A patent/TW201422805A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107312650A (en) * | 2016-04-26 | 2017-11-03 | 信越化学工业株式会社 | The preparation of cleanser compositions and thin substrate |
| CN107312650B (en) * | 2016-04-26 | 2021-09-10 | 信越化学工业株式会社 | Detergent composition and preparation of thin substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2014057860A1 (en) | 2016-09-05 |
| WO2014057860A1 (en) | 2014-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW594444B (en) | Residue cleaning solution | |
| TW556054B (en) | Stripping composition | |
| CN102449131B (en) | Compositions and methods for removing organic substances | |
| TWI355416B (en) | Aqueous cleaning composition for removing residues | |
| TWI275904B (en) | Photoresist stripper composition, and exfoliation method of a photoresist using it | |
| JP6412143B2 (en) | Stripper composition for removing photoresist and method for stripping photoresist using the same | |
| TWI494713B (en) | Photoresist stripping solution | |
| TW201533549A (en) | Resist-stripping liquid | |
| JP2003289060A (en) | Cleaning liquid for substrate for semiconductor device and cleaning method | |
| KR101595977B1 (en) | Stripper composition for removing photoresist and stripping mthod of photoresist using the same | |
| TW201134940A (en) | Photoresist stripping solutions | |
| TWI752903B (en) | Compositions and methods that promote charge complexing copper protection during low pka driven polymer stripping | |
| JP2000039727A (en) | Stripper composition for photoresist | |
| TW201422805A (en) | Substrate cleaning method and cleaning liquid composition | |
| WO2014057861A1 (en) | Method for cleaning glass substrate | |
| TW201100979A (en) | Resist remover composition and method for removing resist using same | |
| TWI243203B (en) | Composition for stripping resist | |
| US20110253171A1 (en) | Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication | |
| TW426816B (en) | Hydroxylamine-gallic compound composition and process | |
| KR20100032993A (en) | Stripper composition for removing photoresist | |
| US9611451B2 (en) | Metal-safe solid form aqueous-based compositions and methods to remove polymeric materials in electronics manufacturing | |
| KR20160024574A (en) | Resist stripper composition and a method of stripping resist using the same | |
| KR20080076535A (en) | Stipper composition for photoresist comprising n-methylacetamide | |
| TWI793500B (en) | Stripper composition for removing photoresist and stripping method of photoresist using the same | |
| JP2004205675A (en) | Resist stripping agent |