TW201422056A - Laser transfer method and apparatus therefor - Google Patents

Abstract

The invention relates to a laser transfer method and apparatus therefor, and to an organic EL panel, and an organic EL layer for forming lighting layer of the organic EL panel without using an evaporation mask. A circuit substrate (101) with an organic EL component forming portion is arranged opposite to an organic EL film (21) and on a supporting substrate (20), and a metallic subject substrate (220) is subjected to laser to generate chock wave in the supporting substrate (20). An organic EL layer is formed on the circuit substrate (101) side. In this way, organic EL panels can be manufactured in high precision and large frame and at a low cost.

Description

雷射轉印方法及使用彼之雷射轉印設備 Laser transfer method and use of the laser transfer device

本發明是有關有機EL面板，有機TFT，有機太陽電池等的機能性有機膜的製造方法。 The present invention relates to a method for producing a functional organic film such as an organic EL panel, an organic TFT, or an organic solar cell.

又，有關有機EL面板的製造裝置及有機EL面板製造方法，特別是有關高效率安定形成有機EL發光層的技術。 Further, the manufacturing apparatus of the organic EL panel and the method of manufacturing the organic EL panel are particularly related to techniques for forming an organic EL light-emitting layer with high efficiency and stability.

以往，包含有機EL面板的發光層之有機EL層的分色法是使用遮罩蒸鍍法。但，遮罩蒸鍍法是所使用的蒸鍍遮罩高價，且運用成本也高，因為使裝置基板與蒸鍍遮罩接觸，所以異物的影響大，製造良品率低。因此，製造成本變高，有機EL面板單價高。而且，蒸鍍遮罩製造技術及遮罩蒸鍍製程，對於有機EL面板的大型化．高精細化或工件大小擴大，也未能追上。 Conventionally, the color separation method of the organic EL layer including the light-emitting layer of the organic EL panel is a mask vapor deposition method. However, in the mask vapor deposition method, the vapor deposition mask used is expensive, and the operation cost is also high. Since the device substrate is brought into contact with the vapor deposition mask, the influence of foreign matter is large, and the manufacturing yield is low. Therefore, the manufacturing cost becomes high, and the unit price of the organic EL panel is high. Moreover, the vapor deposition mask manufacturing technology and the mask evaporation process are large-sized for the organic EL panel. High definition or enlarged workpiece size has not caught up.

為了解決該等的問題，有「白色光+彩色濾光片(CF)」法或色變換法、噴墨法或透印版印刷法等的溶液製程等未使用遮罩蒸鍍的方法被檢討。就使用「白色光+CF」法或色變換法、噴墨法或透印版印刷法等的塗佈製 程之有機EL面板而言，發光效率會降低，壽命也變短。因此，為了實現使用該等的技術之有機EL面板，必須等待發光效率高，且可達成長壽命的材料之開發。另外，所謂、「白色光+CF」法是先在全畫素形成白色光的有機EL層，按每個畫素每使用複數色的CF來形成彩色畫像者。 In order to solve such problems, a method such as a "white light + color filter (CF)" method, a color conversion method, an inkjet method, or a plate-printing method, etc., which is not used for mask vapor deposition, is reviewed. . Coating using a "white light + CF" method or a color conversion method, an inkjet method, or a through-printing method In the organic EL panel of Cheng, the luminous efficiency is reduced and the life is shortened. Therefore, in order to realize an organic EL panel using these technologies, it is necessary to wait for development of materials having high luminous efficiency and achieving a long life. In addition, the "white light + CF" method is an organic EL layer that first forms white light in a full pixel, and a color image is formed for each pixel using a plurality of CFs.

作為取代遮罩蒸鍍的分色法的別的手段，可舉雷射轉印法。雷射轉印法是可高精細對應，可對應於大面積基板。在專利文獻1是有藉由昇華法來使材料蒸鍍於有機EL面板的雷射轉印法被報告(LIPS、Laser Patternwise Sublimation)。並且，在專利文獻2是有藉由轉印薄板的熱膨脹來使有機材料轉印至有機EL面板的雷射轉印法被報告(LITI、Laser Induced Thermal Imaging)。 As another means of replacing the color separation method of the mask vapor deposition, a laser transfer method can be mentioned. The laser transfer method is high-definition and can correspond to a large-area substrate. Patent Document 1 discloses a laser transfer method in which a material is vapor-deposited on an organic EL panel by a sublimation method (LIPS, Laser Patternwise Sublimation). Further, Patent Document 2 discloses a laser transfer method in which an organic material is transferred to an organic EL panel by thermal expansion of a transfer sheet (LITI, Laser Induced Thermal Imaging).

在專利文獻3是揭示有：對施體基板(donor substrate)的既定的場所照射雷射光，以形成於施體基板上的吸收層來吸收雷射光，藉此使衝撃波產生，使施體基板上的發光材料剝離而使轉印至有機EL面板的無遮罩圖案化。 Patent Document 3 discloses that laser light is irradiated to a predetermined place of a donor substrate, and an absorption layer formed on the donor substrate absorbs laser light, thereby generating a punch wave, and applying the punch wave to the donor substrate. The luminescent material is peeled off to pattern the unmasked material transferred to the organic EL panel.

並且，有機EL(電致發光；Electro luminescence)元件是具有自發光性、高速反應及廣視野角等的良好性能。藉由該等的良好性能，近年來，有機EL元件作為表現高畫質的動影像的顯示器面板用的裝置已被開發。有機EL元件是在陰極與陽極之間具有層疊有機電洞輸送層、有機電子輸送層、有機發光層等的多層構造。 Further, the organic EL (Electroluminescence) element has excellent properties such as self-luminescence, high-speed reaction, and wide viewing angle. In recent years, organic EL devices have been developed as devices for display panels that exhibit high-quality moving images. The organic EL element has a multilayer structure in which a laminated organic hole transport layer, an organic electron transport layer, an organic light-emitting layer, or the like is provided between a cathode and an anode.

成為有機EL顯示裝置的發光層等之薄的有機EL膜 的成膜方法，一般是使用遮罩蒸鍍法。所謂遮罩蒸鍍法是以圖案狀地形成有開口部的蒸鍍遮罩來覆蓋基板，通過開口部來蒸鍍有機物質，在基板上形成有機EL膜的方法。由於有機EL顯示裝置是畫素的精細度高，因此蒸鍍遮罩的開口非常小。遮罩蒸鍍法是在覆蓋基板的遮罩上也堆積有機EL膜，由於開口徑變化，所以蒸鍍遮罩的定期性的更換、洗淨、或維修為必要，有生產性降低的課題。 Thin organic EL film which becomes a light-emitting layer of an organic EL display device The film forming method is generally a mask evaporation method. The mask vapor deposition method is a method in which a vapor deposition mask having an opening is formed in a pattern to cover a substrate, and an organic substance is vapor-deposited through the opening to form an organic EL film on the substrate. Since the organic EL display device is high in the fineness of the pixels, the opening of the vapor deposition mask is very small. In the mask vapor deposition method, the organic EL film is deposited on the mask covering the substrate, and the opening diameter is changed. Therefore, it is necessary to periodically replace, clean, or repair the vapor deposition mask, and there is a problem that productivity is lowered.

並且，因為遮罩蒸鍍法是接受來自蒸發源的熱輻射，遮罩本身會熱膨脹，所以無法確保主基板的周邊部的遮罩開口位置與電路基板上的既定蒸鍍位址的對位精度，成為阻礙對應於主基板大型化、面板高精細化的要因。 Further, since the mask vapor deposition method receives heat radiation from the evaporation source, the mask itself thermally expands, so that the alignment accuracy of the mask opening position of the peripheral portion of the main substrate and the predetermined vapor deposition address on the circuit board cannot be ensured. This is a factor that hinders the enlargement of the main substrate and the high definition of the panel.

為了解決該等的問題，使預先蒸鍍有機層的施體基板與形成元件的元件基板緊貼或接近，對施體基板照射雷射束，藉此使有機EL層昇華或剝離，往元件基板轉印的無遮罩轉印方式被提倡。 In order to solve such problems, the donor substrate on which the organic layer is vapor-deposited is brought into close contact with or close to the element substrate on which the element is formed, and the donor substrate is irradiated with a laser beam, thereby sublimating or peeling off the organic EL layer to the element substrate. The transfer-free maskless transfer method is advocated.

在預先形成有機層的施體基板上照射雷射，將有機層轉印至電路基板上的所望區域的方式，在專利文獻4)是揭示有：對於在玻璃基板全面塗佈發光材料的施體基板照射雷射，藉此使發光材料昇華，在對向設置的裝置基板上形成有機EL層之技術。並且，在專利文獻5是揭示有：使塗佈發光材料的施體薄膜緊貼於裝置基板，將發光層熱轉印至既定的場所之方式。 A method of irradiating a laser on a donor substrate on which an organic layer is formed in advance and transferring the organic layer to a desired region on a circuit board is disclosed in Patent Document 4): a coating body for completely coating a luminescent material on a glass substrate The substrate is irradiated with a laser to sublimate the luminescent material, and a technique of forming an organic EL layer on the oppositely disposed device substrate. Further, Patent Document 5 discloses a method in which a donor film coated with a light-emitting material is adhered to a device substrate, and the light-emitting layer is thermally transferred to a predetermined place.

[先行技術文獻] [Advanced technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特許3789991號公報 [Patent Document 1] Japanese Patent No. 3789991

[專利文獻2]日本特表2002-534782號公報 [Patent Document 2] Japanese Patent Publication No. 2002-534782

[專利文獻3]日本特開2010-40380號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2010-40380

[專利文獻4]日本特開2002-302759號 [Patent Document 4] Japanese Patent Laid-Open No. 2002-302759

[專利文獻5]日本特開2006-216563號 [Patent Document 5] Japanese Patent Laid-Open No. 2006-216563

專利文獻1所示的LIPS法是對於在玻璃基板全面形成發光材料的施體基板照射雷射，藉此使發光材料昇華，在對向設置的裝置基板上形成有機EL層。藉由對成膜部分選擇性地照射雷射來實現無遮罩圖案化。就此方法而言，因為1層1層蒸鍍，所以容易因昇華用的蓄熱層的溫度上昇而受蒸鍍環境的影響。因此，工程數變長，膜質劣化也容易產生。並且，就LIPS法而言，原理上只能一次圖案化1層，有隨著分離形成的層數增加，而轉印的工程數增加的缺點。又，由於將雷射能量予以熱變換來利用，所以會因為轉印環境溫度上昇而產生雜質混入等，擔憂有機EL元件的特性劣化。 In the LIPS method disclosed in Patent Document 1, a donor substrate on which a luminescent material is entirely formed on a glass substrate is irradiated with a laser, whereby the luminescent material is sublimated, and an organic EL layer is formed on the oppositely disposed device substrate. Maskless patterning is achieved by selectively illuminating the film forming portion with a laser. In this method, since one layer and one layer are vapor-deposited, it is easy to be affected by the vapor deposition environment due to an increase in the temperature of the heat storage layer for sublimation. Therefore, the number of engineering becomes long, and deterioration of film quality is also likely to occur. Further, in the case of the LIPS method, in principle, only one layer can be patterned at a time, and there is a disadvantage that the number of layers formed by separation increases and the number of engineering transferred increases. In addition, since the laser energy is used for thermal conversion, the impurities are mixed due to an increase in the temperature of the transfer environment, and the characteristics of the organic EL element are deteriorated.

又，專利文獻2所示的LITI法是使形成發光材料的施體薄膜緊貼於裝置，在既定的場所照射雷射，藉此實現無遮罩圖案化。LITI法基本上是熱轉印法，可複數層的轉印。但，需要附加壓力、溫度，一旦層數增加，厚膜化， 則擔憂膜質劣化。因此，即使是LITI法，實際上也為1~2層，所以當層數增加時，需要重複轉印，或與蒸鍍法併用。並且，一旦異物存在，則會在予以夾持的狀態下施加壓力，因此缺陷會增加。 Further, in the LITI method disclosed in Patent Document 2, the donor film forming the luminescent material is brought into close contact with the device, and the laser is irradiated at a predetermined place, thereby achieving maskless patterning. The LITI method is basically a thermal transfer method, which can transfer a plurality of layers. However, additional pressure and temperature are required, and once the number of layers is increased, the film is thickened. Then there is concern about deterioration of the film quality. Therefore, even in the case of the LITI method, it is actually 1 to 2 layers, so when the number of layers is increased, it is necessary to repeat the transfer or use it in combination with the vapor deposition method. Further, when foreign matter is present, pressure is applied in a state of being clamped, so that defects are increased.

又，專利文獻3中未揭示用以使衝撃波產生的具體的雷射照射方法，可想像是利用與LIPS法同樣的昇華之發光材料的蒸鍍，具有與LIPS法同樣的課題。 Further, Patent Document 3 does not disclose a specific laser irradiation method for generating a smash wave, and it is conceivable that vapor deposition using a sublimation luminescent material similar to the LIPS method has the same problem as the LIPS method.

在專利文獻4是揭示有：對於在玻璃基板全面塗佈發光材料的施體基板照射雷射，藉此使發光材料昇華，在對向設置的裝置基板上形成有機EL層之技術。然而，將雷射能量變換成熱，發光材料充分地加熱至昇華的溫度，因此轉印環境的溫度上昇所造成的雜質混入等容易發生，會有有機EL元件特性容易劣化的問題。 Patent Document 4 discloses a technique in which a donor substrate on which a luminescent material is entirely coated on a glass substrate is irradiated with a laser to sublimate the luminescent material, and an organic EL layer is formed on the oppositely disposed device substrate. However, since the laser energy is converted into heat and the luminescent material is sufficiently heated to the sublimation temperature, impurities or the like caused by an increase in the temperature of the transfer environment are likely to occur, and the organic EL element characteristics are likely to be deteriorated.

在專利文獻5是揭示有：使塗佈發光材料的施體薄膜緊貼於裝置基板，將發光層熱轉印至既定的場所之方式。但，因為使裝置基板與施體薄膜緊貼，所以一旦異物存在，則會在予以夾持的狀態下施加壓力，因此在形成裝置時會有異物引起的黑點缺陷增加的問題。 Patent Document 5 discloses a method in which a donor film coated with a light-emitting material is adhered to a device substrate, and the light-emitting layer is thermally transferred to a predetermined place. However, since the device substrate and the donor film are brought into close contact with each other, when foreign matter is present, pressure is applied in a state where the foreign matter is present. Therefore, there is a problem that black spot defects due to foreign matter increase when the device is formed.

本發明的課題是克服以上那樣的問題點，不使用蒸鍍遮罩，良品率佳地形成含發光層的複數個有機膜層。 An object of the present invention is to overcome the above problems, and to form a plurality of organic film layers including a light-emitting layer without using a vapor deposition mask.

本發明的第2目的是在於解決上述以往技術的課題，提供一種在雷射轉印製程中不會隨溫度上昇產生元件發光特性的劣化或異物混入造成的黑點缺陷之雷射轉印方法或轉印裝置。 A second object of the present invention is to solve the above-described problems of the prior art, and to provide a laser transfer method in which a black spot defect caused by deterioration of a light-emitting property of a device or a foreign matter does not occur due to an increase in temperature during a laser transfer process or Transfer device.

又，本發明的第3目的是在於提供一種可高速且高安定地將施體基板上的有機層轉印至電路基板之雷射轉印方法或轉印裝置。 Further, a third object of the present invention is to provide a laser transfer method or a transfer device which can transfer an organic layer on a donor substrate to a circuit board at a high speed and with high stability.

本發明係一種雷射轉印方法，係將形成於金屬施體薄板上的薄膜予以轉印至與金屬施體薄板對向的基板之轉印方法，其特徵為：在一定的方向掃描複數的脈衝雷射光列，而照射至金屬施體薄板背面，在照射第1脈衝光的部分，以第2脈衝光的至少一部分能夠重疊的方式照射掃描第2脈衝光。 The invention relates to a laser transfer method, which is a method for transferring a film formed on a metal donor sheet to a substrate opposite to a metal donor sheet, characterized in that: scanning a plurality of layers in a certain direction The pulsed laser beam is irradiated onto the back surface of the metal donor thin plate, and the second pulsed light is irradiated so that at least a part of the second pulsed light can overlap while the first pulsed light is irradiated.

又，本發明係一種雷射轉印設備，係在將形成於金屬施體薄板上的薄膜轉印至與金屬施體薄板對向的基板之轉印方法的雷射轉印設備，其特徵係具有：轉印部，其係進行：在一定的方向掃描複數的脈衝雷射光列，而照射至金屬施體薄板背面，在照射第1脈衝光的部分，以第2脈衝光的至少一部分能夠重疊的方式照射掃描第2脈衝光之雷射轉印方法；及薄膜形成部，其係於金屬施體薄板形成有機膜作為薄膜。 Further, the present invention relates to a laser transfer apparatus which is a laser transfer apparatus for transferring a film formed on a metal donor sheet to a substrate opposite to a metal application sheet, and is characterized by And a transfer unit that scans a plurality of pulsed laser beams in a predetermined direction and irradiates the back surface of the metal thin plate, and at least a part of the second pulse light can be overlapped in a portion where the first pulse light is irradiated A method of irradiating a laser beam for scanning a second pulsed light; and a film forming portion for forming an organic film as a film on a metal donor sheet.

又，本發明係一種有機EL面板製造裝置，其特徵係具備：平台，其係搭載：在一主面形成有機層的施體基板、及與前述一主面隔著一定的間隔來對向的電路基板； 雷射振盪器，其係振盪雷射光；雷射光整形手段，其係將前述雷射光變換成矩形形狀的均一強度分布；雷射光分配手段，其係取得將前述均一強度分布的雷射光予以直列且等間隔地配光的2個以上的雷射光；投影透鏡，其係將前述2個以上的雷射光予以縮小投影於前述施體基板的其他主面上；移動手段，其係使前述直列且等間隔地配光的前述雷射光與前述平台在前述直列方向相對地等速移動；及控制手段，其係隨著前述等速移動，使往前述施體基板的其他主面上的同一處重疊照射。 Moreover, the present invention provides an apparatus for manufacturing an organic EL panel, comprising: a platform on which a donor substrate having an organic layer formed on a main surface thereof and a predetermined interval therebetween are opposed to each other; Circuit substrate a laser oscillator, which is an oscillating laser beam; a laser beam shaping device that converts the laser light into a rectangular shape with a uniform intensity distribution; and a laser light distribution device that obtains the laser light of the uniform intensity distribution in an array and Two or more types of laser light that are equally spaced; a projection lens that reduces and projects the two or more types of laser light onto the other main surface of the donor substrate; and the moving means that causes the in-line and the like The laser light spaced apart from the light is moved at a constant speed relative to the in-line direction of the platform; and the control means is configured to overlap the same surface on the other main surface of the donor substrate in accordance with the constant velocity movement .

又，本發明係一種有機EL面板製造方法，係於電路基板上形成由導電性薄膜所構成的第一電極，在前述第一電極上形成至少含發光層的有機EL層，形成被形成於前述有機EL層上的第二電極之有機EL面板的製造方法，其特徵為：對於在一主面層疊有機EL膜的施體基板，使形成下部電極的前述電路基板與前述施體基板保持一定的間隔和前述一主面對向，將所被振盪的振盪雷射光予以變換成具備矩形形狀的均一強度分布之複數的矩形雷射光，將複數的前述矩形雷射光予以直列且等間隔地配置，在前述施體基板的其他主面的既定的區域隔一定時間以上既定次數重疊照射， 使前述有機EL膜從前述施體基板剝離，轉印至前述對向的前述電路基板上。 Moreover, the present invention relates to a method for producing an organic EL panel, in which a first electrode made of a conductive thin film is formed on a circuit board, and an organic EL layer containing at least a light-emitting layer is formed on the first electrode, and the formation is formed on the aforementioned A method for producing an organic EL panel of a second electrode on an organic EL layer, wherein the substrate substrate on which the organic EL film is laminated on one main surface is provided so that the circuit substrate on which the lower electrode is formed and the donor substrate are kept constant Between the interval and the one main facing direction, the oscillating laser light that has been oscillated is converted into a plurality of rectangular laser beams having a rectangular uniform intensity distribution, and the plurality of rectangular laser lights are arranged in series and at equal intervals. The predetermined area of the other main surface of the donor substrate overlaps with a predetermined number of times over a predetermined period of time. The organic EL film is peeled off from the donor substrate and transferred onto the opposite circuit substrate.

本發明是將形成於金屬施體薄板上的薄膜轉印至與金屬施體薄板對向的基板之轉印方法，在一定的方向掃描複數的脈衝雷射光列，而照射至金屬施體薄板背面，以第2脈衝光的至少一部分會重疊於照射第1脈衝光的部分之方式照射掃描第2脈衝光，藉此可不使用蒸鍍遮罩來形成有機膜層，因此有機膜面板的大型化、高精細化成為可能。 The present invention is a method for transferring a film formed on a metal donor sheet to a substrate opposite to a metal donor sheet, scanning a plurality of pulsed laser beams in a certain direction, and irradiating the back surface of the metal donor sheet By scanning the second pulsed light so that at least a part of the second pulsed light is superimposed on the portion irradiated with the first pulsed light, the organic film layer can be formed without using the vapor deposition mask, and therefore the organic film panel is enlarged. High definition is possible.

又，由於形成有機膜面板的主基板的大型化成為可能，所以可使每主基板的面板取得數增大，其結果，可使有機膜面板的製造成本降低。 Moreover, since the size of the main substrate on which the organic film panel is formed is increased, the number of panels obtained per main substrate can be increased, and as a result, the manufacturing cost of the organic film panel can be reduced.

又，由於可使構成有機膜元件(被複數形成於有機膜面板上)的有機膜在限制條件少的平膜的狀態下形成，因此可提高膜厚分布．再現性，可改善色純度等的特性。又，由於可在平膜的狀態下形成有機膜元件的膜構成，因此可降低膜缺陷，有助於有機膜層的工程數低減。 Further, since the organic film constituting the organic film element (which is formed plurally on the organic film panel) can be formed in a state in which a flat film having a small number of restrictions is formed, the film thickness distribution can be improved. Reproducibility improves characteristics such as color purity. Moreover, since the film structure of the organic film element can be formed in a flat film state, film defects can be reduced, and the number of engineering of the organic film layer can be reduced.

又，若根據本發明，則可提供一種在雷射轉印製程中不會隨溫度上昇產生元件發光特性的劣化或異物混入造成的黑點缺陷之雷射轉印方法或轉印裝置。 Moreover, according to the present invention, it is possible to provide a laser transfer method or a transfer device which does not cause deterioration of the light-emitting characteristics of the element or black spot defects caused by foreign matter incorporation in the laser transfer process.

又，可高速且高安定地將施體基板上的有機層轉印至電路基板之雷射轉印方法或轉印裝置。 Moreover, the laser beam transfer method or the transfer device which transfers the organic layer on the donor substrate to the circuit board at high speed and high stability can be used.

20、60、61、70、71‧‧‧支撐基板 20, 60, 61, 70, 71‧‧‧ support substrate

21‧‧‧第1有機膜 21‧‧‧1st organic film

22‧‧‧薄膜片 22‧‧‧film film

23‧‧‧薄膜圖案 23‧‧‧ film pattern

31、51‧‧‧第1脈衝光 31, 51‧‧‧1st pulse light

32、52‧‧‧第2脈衝光 32, 52‧‧‧2nd pulse light

33‧‧‧第3脈衝光 33‧‧‧3rd pulsed light

41‧‧‧熱擴散的圓柱區域 41‧‧‧ Thermally diffused cylindrical region

100、300、400、500‧‧‧有機EL基板 100, 300, 400, 500‧‧‧ organic EL substrate

101‧‧‧驅動電路基板 101‧‧‧Drive circuit substrate

102‧‧‧平坦化層 102‧‧‧flattening layer

103‧‧‧第1電極 103‧‧‧1st electrode

104‧‧‧堤部 104‧‧‧dike

105~107‧‧‧有機膜 105~107‧‧‧ organic film

108‧‧‧第2電極 108‧‧‧2nd electrode

109‧‧‧有機EL元件形成部 109‧‧‧Organic EL element forming department

220‧‧‧施體基板 220‧‧‧body substrate

801‧‧‧基板 801‧‧‧Substrate

802‧‧‧閘極電極 802‧‧ ‧ gate electrode

803‧‧‧閘極絕緣層 803‧‧‧ gate insulation

804‧‧‧源極電極 804‧‧‧ source electrode

805‧‧‧汲極電極 805‧‧‧汲electrode

806‧‧‧有機膜 806‧‧‧ Organic film

810‧‧‧有機TFT基板 810‧‧‧Organic TFT substrate

901‧‧‧基板 901‧‧‧Substrate

902‧‧‧第1電極 902‧‧‧1st electrode

903‧‧‧堤部 903‧‧‧dike

904~906‧‧‧有機膜 904~906‧‧‧ Organic film

907‧‧‧第2電極 907‧‧‧2nd electrode

910‧‧‧有機太陽電池基板 910‧‧‧Organic solar cell substrate

502‧‧‧前處理室 502‧‧‧Pre-treatment room

503、515‧‧‧有機蒸鍍室 503, 515‧‧‧ organic evaporation chamber

504、506、507、509、512、514‧‧‧雷射轉印室 504, 506, 507, 509, 512, 514‧‧ ‧ laser transfer room

505、508、513‧‧‧施體蒸鍍槽 505, 508, 513‧‧‧ body evaporation tank

516‧‧‧蒸鍍室 516‧‧‧vaporation chamber

517‧‧‧密封室 517‧‧‧ sealed room

1‧‧‧雷射振盪器 1‧‧‧Laser oscillator

3‧‧‧雷射光 3‧‧‧Laser light

4‧‧‧光擋板 4‧‧‧Light baffle

12‧‧‧雷射光整形．分歧手段 12‧‧‧Laser light shaping. Disagreement

13‧‧‧遮罩 13‧‧‧ mask

13K‧‧‧遮罩的開口部 13K‧‧‧ opening of the mask

14‧‧‧中繼透鏡 14‧‧‧Relay lens

16‧‧‧施體基板及電路基板 16‧‧‧body substrate and circuit board

17‧‧‧平台 17‧‧‧ platform

18‧‧‧光束輪廓分析儀 18‧‧‧beam profiler

80、30‧‧‧繞射光學元件 80, 30‧‧‧Diffractive optical components

81‧‧‧高斯型強度分布 81‧‧‧ Gaussian intensity distribution

85、35‧‧‧均一強度分布 85, 35‧‧‧ uniform intensity distribution

50‧‧‧真空腔室 50‧‧‧vacuum chamber

201、202、203‧‧‧雷射轉印裝置 201, 202, 203‧‧ ‧ laser transfer device

310‧‧‧電路基板 310‧‧‧ circuit board

304‧‧‧有機EL膜 304‧‧‧Organic EL film

305‧‧‧剝離片 305‧‧‧ peeling film

312‧‧‧施體基板 312‧‧‧body substrate

320~327‧‧‧轉印區域 320~327‧‧‧Transfer area

330‧‧‧未照射區域 330‧‧‧Unilluminated area

401‧‧‧玻璃基板 401‧‧‧ glass substrate

402‧‧‧SiN膜 402‧‧‧SiN film

403‧‧‧SiO膜 403‧‧‧SiO film

405‧‧‧通道膜 405‧‧‧channel membrane

406‧‧‧閘極配線 406‧‧‧gate wiring

407‧‧‧源極、汲極配線 407‧‧‧Source and drain wiring

408‧‧‧層間絕緣膜 408‧‧‧Interlayer insulating film

409‧‧‧鈍化膜 409‧‧‧passivation film

410‧‧‧透明電極 410‧‧‧Transparent electrode

411‧‧‧元件分離帶 411‧‧‧Component separation tape

412‧‧‧電洞輸送層陰極 412‧‧‧Cone transport layer cathode

413‧‧‧發光層 413‧‧‧Lighting layer

414‧‧‧陰極 414‧‧‧ cathode

415‧‧‧充填材 415‧‧‧ Filling materials

416‧‧‧密封板 416‧‧‧ Sealing plate

圖1是表示本發明的有機EL顯示裝置的剖面圖。 Fig. 1 is a cross-sectional view showing an organic EL display device of the present invention.

圖2是實施例1的製造製程圖。 2 is a manufacturing process diagram of Embodiment 1.

圖3是表示實施例1的脈衝雷射光列的圖表。 Fig. 3 is a graph showing a pulse laser light train of the first embodiment.

圖4是表示實施例1的脈衝雷射照射後的金屬施體薄板的熱擴散區域的模式圖。 4 is a schematic view showing a thermal diffusion region of a metal donor sheet after pulsed laser irradiation in the first embodiment.

圖5是表示實施例1的脈衝雷射照射方法的模式圖。 Fig. 5 is a schematic view showing a pulse laser irradiation method of the first embodiment.

圖6是表示具有實施例1的凹凸構造之金屬施體薄板的製造方法的剖面圖。 Fig. 6 is a cross-sectional view showing a method of manufacturing a metal thin plate having the uneven structure of the first embodiment.

圖7是表示具有實施例1的2層構造之金屬施體薄板的製造方法的剖面圖。 Fig. 7 is a cross-sectional view showing a method of manufacturing a metal-coated thin plate having the two-layer structure of the first embodiment.

圖8是表示本發明的雷射轉印設備之一形態的模式圖。 Fig. 8 is a schematic view showing one embodiment of a laser transfer apparatus of the present invention.

圖9是表示本發明的雷射轉印設備的其他形態的模式圖。 Fig. 9 is a schematic view showing another embodiment of the laser transfer apparatus of the present invention.

圖10是表示本發明的實施例2的有機EL顯示裝置的剖面圖。 FIG. 10 is a cross-sectional view showing an organic EL display device according to a second embodiment of the present invention.

圖11是表示本發明的實施例3的有機EL顯示裝置的剖面圖。 FIG. 11 is a cross-sectional view showing an organic EL display device according to a third embodiment of the present invention.

圖12是表示本發明的實施例4的有機EL顯示裝置的剖面圖。 FIG. 12 is a cross-sectional view showing an organic EL display device according to a fourth embodiment of the present invention.

圖13是表示本發明的實施例5的有機TFT裝置的剖面圖。 Fig. 13 is a cross-sectional view showing an organic TFT device according to a fifth embodiment of the present invention.

圖14是表示本發明的實施例6的有機太陽電池裝置 的剖面圖。 Figure 14 is a view showing an organic solar battery device of Example 6 of the present invention. Sectional view.

圖15是表示本發明的實施例7的雷射轉印裝置的構成圖。 Fig. 15 is a configuration diagram showing a laser transfer device according to a seventh embodiment of the present invention.

圖16是表示可採用於本發明的雷射轉印裝置的繞射光學元件的構成及被形成的所望形狀的均一強度分布圖。 Fig. 16 is a view showing a configuration of a diffractive optical element which can be employed in the laser transfer device of the present invention, and a uniform intensity distribution diagram of a desired shape to be formed.

圖17是表示本發明的實施例8的雷射轉印裝置的構成圖。 Fig. 17 is a configuration diagram showing a laser transfer device according to an eighth embodiment of the present invention.

圖18A是表示可採用在本發明的雷射轉印裝置的繞射光學元件的其他構成及被形成的所望形狀的均一強度分布圖。 Fig. 18A is a view showing a uniform intensity distribution of another configuration of a diffractive optical element which can be employed in the laser transfer device of the present invention and a desired shape to be formed.

圖18B是表示可採用於本發明的雷射轉印裝置的繞射光學元件的其他構成的圖。 Fig. 18B is a view showing another configuration of a diffractive optical element which can be employed in the laser transfer device of the present invention.

圖19是說明本發明的雷射轉印方法的圖。 Figure 19 is a view for explaining a laser transfer method of the present invention.

圖20是說明本發明的雷射轉印方法的適當的條件範圍的圖。 Fig. 20 is a view for explaining an appropriate range of conditions of the laser transfer method of the present invention.

圖21是表示本發明的實施例9的雷射轉印裝置的構成圖。 Fig. 21 is a block diagram showing a laser transfer device according to a ninth embodiment of the present invention.

圖22是表示適用本發明的有機EL顯示器生產工程之一例的工程圖。 Fig. 22 is a drawing showing an example of a production process of an organic EL display to which the present invention is applied.

圖23是表示完成後的有機EL元件的構造的剖面圖。 Fig. 23 is a cross-sectional view showing the structure of the completed organic EL element.

以下，按照實施例，藉由圖面等來詳細說明本發明。以下的說明是顯示本案發明的內容的具體例，本案發明並 非限於該等的說，該當業者可在本說明書所揭示的技術思想的範圍內實施各種的變更及修正。並且，在用以說明本發明的全圖中，具有同一機能者是附上同一符號，有時省略其重複的說明。 Hereinafter, the present invention will be described in detail by way of drawings and the like in accordance with the embodiments. The following description is a specific example showing the contents of the present invention, and the present invention is The present invention is not limited to the above, and various changes and modifications can be made by the practitioner within the scope of the technical idea disclosed in the present specification. In the entire drawings for explaining the present invention, the same functions are denoted by the same reference numerals, and the description thereof will be omitted.

在本說明書中是將在具有TFT等的驅動電路的驅動電路基板上形成由有機EL元件所構成的發光元件之基板稱為有機EL基板，將密封有機EL基板者稱為有機EL面板。 In the present specification, a substrate in which a light-emitting element composed of an organic EL element is formed on a drive circuit board having a drive circuit such as a TFT is referred to as an organic EL substrate, and a sealed organic EL substrate is referred to as an organic EL panel.

[實施例1] [Example 1]

首先，針對在有機EL基板上形成被圖案化的有機膜之有機EL面板的製造方法來說明本發明的雷射轉印方法。圖1是實施例1的有機EL基板的剖面圖。在圖1中，100是表示有機EL基板。101是在玻璃基板上形成具有TFT(薄膜電晶體)等的驅動電路之驅動電路基板，102是設在驅動電路基板101上之聚醯亞胺等所構成的平坦化層，103是由成為有機EL元件的下部電極的導電性薄膜所構成的第1電極，104是覆蓋第1電極端部的絕緣堤部(bank)，105~107是構成有機EL元件的有機膜，108是成為上部電極的第2電極。109是表示設在驅動電路基板101上之上述的有機EL元件形成部。有機EL基板100是由驅動電路基板101及形成於其上的有機EL元件形成部109所形成。 First, the laser transfer method of the present invention will be described with respect to a method of manufacturing an organic EL panel in which a patterned organic film is formed on an organic EL substrate. Fig. 1 is a cross-sectional view showing an organic EL substrate of Example 1. In Fig. 1, 100 denotes an organic EL substrate. 101 is a drive circuit substrate on which a drive circuit such as a TFT (Thin Film Transistor) is formed on a glass substrate, 102 is a planarization layer made of polyimide or the like provided on the drive circuit substrate 101, and 103 is made organic. The first electrode 104 made of a conductive thin film of the lower electrode of the EL element is an insulating bank covering the end of the first electrode, 105 to 107 are organic films constituting the organic EL element, and 108 is an upper electrode. The second electrode. 109 is the above-described organic EL element forming portion provided on the drive circuit substrate 101. The organic EL substrate 100 is formed of a drive circuit substrate 101 and an organic EL element forming portion 109 formed thereon.

從驅動電路基板101側取出發光後的光之底部發光型 (Bottom Emission)元件時，第1電極103是藉由ITO、IZO、ZnO等的透明導電膜所形成，第2電極108是藉由Al等的反射性金屬膜所構成。另一方面，從驅動電路基板101的相反側取出發光後的光之頂部發光型(Top Emission)元件時，第1電極103是使用Al等的反射性金屬膜。有時第1電極103的表面是藉由ITO等的透明膜所被覆。第2電極108是使用ITO、IZO、ZnO等的透明導電膜，或薄薄形成的Ag等金屬膜的半透明膜。有時第2電極108是設為透明導電膜及金屬膜的層疊膜。 The bottom emission type of the light after the light is taken out from the side of the drive circuit substrate 101 In the case of the Bottom Emission element, the first electrode 103 is formed of a transparent conductive film such as ITO, IZO, or ZnO, and the second electrode 108 is formed of a reflective metal film such as Al. On the other hand, when the top emission element of the light emitted from the opposite side of the drive circuit board 101 is taken out, the first electrode 103 is made of a reflective metal film of Al or the like. The surface of the first electrode 103 may be covered with a transparent film such as ITO. The second electrode 108 is a semitransparent film using a transparent conductive film such as ITO, IZO, or ZnO, or a thin metal film such as Ag. The second electrode 108 is a laminated film of a transparent conductive film and a metal film.

在圖1所示的有機EL基板100中，有機膜105及有機膜107是作為紅色發光元件106R、綠色發光元件106G、藍色發光元件106B的共通層之機能。當第1電極103側為陽極時，有機膜105是成為電洞輸送層(包含電洞注入層，電子阻止層)，有機膜107是成為電子輸送層(包含電子注入層，電洞阻止層)。相反的，當第2電極106側為陽極時，有機膜107為電洞輸送層，有機膜105是成為電子輸送層。 In the organic EL substrate 100 shown in FIG. 1, the organic film 105 and the organic film 107 function as a common layer of the red light-emitting element 106R, the green light-emitting element 106G, and the blue light-emitting element 106B. When the first electrode 103 side is an anode, the organic film 105 serves as a hole transport layer (including a hole injection layer and an electron blocking layer), and the organic film 107 serves as an electron transport layer (including an electron injection layer and a hole blocking layer). . On the contrary, when the second electrode 106 side is an anode, the organic film 107 is a hole transport layer, and the organic film 105 is an electron transport layer.

有機膜106是包含發光層的有機膜，按發光色來分離圖案成紅色發光元件106R、綠色發光元件106G、藍色發光元件106B。在有機膜106中含有電洞阻止層或電子阻止層，在使有機EL元件具有干涉效果時，含有電洞輸送層、電子輸送層。將本發明適用於此有機膜106的成膜。 The organic film 106 is an organic film including a light-emitting layer, and is separated into a red light-emitting element 106R, a green light-emitting element 106G, and a blue light-emitting element 106B in accordance with the light-emitting color. The organic film 106 contains a hole blocking layer or an electron blocking layer, and when the organic EL element has an interference effect, it includes a hole transporting layer and an electron transporting layer. The present invention is applied to the film formation of this organic film 106.

有機膜106的發光層是也有僅2個發光色被圖案分離的情況。該情況是有機膜105或有機膜107具有作為剩下 的發光色的發光層之機能。由於有機膜105、有機膜107的能帶隙(Band gap)廣，因此作為未被圖案分離的發光層的發光色最好是藍色發光。 The light-emitting layer of the organic film 106 is also in a case where only two light-emitting colors are separated by a pattern. In this case, the organic film 105 or the organic film 107 has the remaining The function of the luminescent color of the luminescent layer. Since the organic film 105 and the organic film 107 have a wide band gap, it is preferable that the luminescent color of the light-emitting layer that is not separated by the pattern is blue light.

在圖2顯示本發明之一實施形態的有機EL基板的製造方法的工程流程圖。在步驟(a)中，顯示由金屬箔所構成支撐基板20。如後述般，對支撐基板照射雷射光，吸收雷射光的脈衝能量。同金屬箔的材質是可舉沃斯田鐵系不鏽鋼、麻田散鐵系不鏽鋼、Ni、Fe-Ni合金等，但並非限於此。 Fig. 2 is a flow chart showing the construction of a method of manufacturing an organic EL substrate according to an embodiment of the present invention. In the step (a), the support substrate 20 composed of a metal foil is shown. As will be described later, the support substrate is irradiated with laser light to absorb the pulse energy of the laser light. The material of the metal foil may be, for example, Worth Iron-based stainless steel, 麻田散铁-based stainless steel, Ni, or Fe-Ni alloy, but is not limited thereto.

在步驟(b)中，藉由在支撐基板20上形成第1有機膜21來形成施體基板220。第1有機膜21是由至少包含106R、106G、106B的任一發光層的1層以上的有機膜所構成的平(未被圖案化)的有機膜。亦可在第1有機膜21含有電洞輸送層或電子阻止層。又，亦可在第1有機膜21含有電子輸送層或電洞輸送層。第1有機膜21的形成方法是可舉周知的真空蒸鍍法、印刷法、旋轉塗佈法，但並非限於此。 In the step (b), the donor substrate 220 is formed by forming the first organic film 21 on the support substrate 20. The first organic film 21 is a flat (unpatterned) organic film composed of one or more organic films including at least one of the light-emitting layers of 106R, 106G, and 106B. The first organic film 21 may contain a hole transport layer or an electron blocking layer. Further, the first organic film 21 may include an electron transport layer or a hole transport layer. The method of forming the first organic film 21 is a vacuum vapor deposition method, a printing method, or a spin coating method, but is not limited thereto.

在步驟(c)中，使設置由平坦化層102、第1電極103及共通層的有機膜104所構成的有機EL元件形成部110的驅動電路基板101與在步驟(b)所示的工程形成的施體基板220對向來安裝於成膜室(轉印室)200內。驅動電路基板101與施體基板220是亦可使接觸，或不使接觸地設置間隙。其次，進行真空排氣至100Pa以下的壓力為止，製作將設於施體基板220的第1有機膜21轉送 至驅動電路基板101的環境。此環境為了容易間隙控制，抑制殘留氣體的影響，而設為100Pa以下的真空度。間隙是最好100μm以下。特別是最好為不接觸的10μm以上100μm以下。100Pa的平均自由工程是約100μm，在上述間隙是被轉印的分子幾乎不會有與殘留氣體衝突的情形，因此殘留氣體進入所被轉印的膜的情形會被減低，可保持轉印膜的膜質的高品質。並且，在比100Pa高真空狀態，即使將間隙形成100μm以上，還是可保持轉印膜的膜質的高品質。另外，薄膜片的轉送環境是亦可為大氣壓，但需要顯著地弄窄驅動電路基板101與施體基板220的間隙，必須注意殘留氣體對轉送的影響。 In the step (c), the drive circuit substrate 101 of the organic EL element forming portion 110 including the planarization layer 102, the first electrode 103, and the organic layer 104 of the common layer is provided in the step (b). The formed donor substrate 220 is oppositely mounted in the film forming chamber (transfer chamber) 200. The drive circuit substrate 101 and the donor substrate 220 may be in contact with each other or may be provided with no gap. Next, vacuum evacuation is performed to a pressure of 100 Pa or less, and the first organic film 21 provided on the donor substrate 220 is transferred. The environment to the drive circuit substrate 101. This environment is set to a vacuum degree of 100 Pa or less in order to facilitate the gap control and suppress the influence of the residual gas. The gap is preferably 100 μm or less. In particular, it is preferably 10 μm or more and 100 μm or less which are not in contact. The average free work of 100 Pa is about 100 μm, and in the above gap, the transferred molecules hardly collide with the residual gas, so that the residual gas enters the film to be transferred, the transfer film can be kept. The membranous quality is high. Further, in a vacuum state higher than 100 Pa, even if the gap is formed to be 100 μm or more, the film quality of the transfer film can be maintained high. Further, the transfer environment of the film sheet may be atmospheric pressure, but it is necessary to significantly narrow the gap between the drive circuit substrate 101 and the donor substrate 220, and attention must be paid to the influence of residual gas on transfer.

在步驟(d)中，在支撐基板20的既定的場所(與形成驅動電路基板101的發光元件圖案的場所對面的施體基板220的場所)，由背面側來照射雷射光La(例如Nd：YAG雷射的第2高次諧波，波長：532nm)，在支撐基板20內引起衝撃波。雷射光La的照射場所是亦可藉由電腦控制的地點指定來進行，或利用設有對應於發光部圖案的開口部之遮光遮罩。在步驟(e)中，在支撐基板20的既定的位置照射複數的脈衝雷射光La。脈衝光是激發支撐基板之金屬箔的電子。該電子是藉由無放射遷移來激發格子振動，使支撐基板的物體溫度上昇。藉此，在支撐基板產生熱膨脹所造成的彈性變形，彈性波會傳播於支撐基板內部。起先被照射的第1脈衝雷射光La1是被金屬箔的支撐基板吸收變換成熱。被變換的熱是在經過時間t-t1擴散 於以式(1)所示的熱擴散長L定義的區域。 In the step (d), the laser beam La is irradiated from the back side at a predetermined place of the support substrate 20 (the place where the donor substrate 220 is opposite to the place where the light-emitting element pattern of the drive circuit substrate 101 is formed) (for example, Nd: The second harmonic of the YAG laser, wavelength: 532 nm) causes a pulsation wave in the support substrate 20. The irradiation place of the laser light La may be performed by a computer-controlled location designation or by using a light-shielding mask provided with an opening corresponding to the light-emitting portion pattern. In the step (e), a plurality of pulsed laser lights La are irradiated at a predetermined position of the support substrate 20. The pulsed light is an electron that excites a metal foil supporting the substrate. The electrons excite the lattice vibration by radiation migration to raise the temperature of the object supporting the substrate. Thereby, the support substrate is elastically deformed by thermal expansion, and the elastic wave propagates inside the support substrate. The first pulsed laser light La1 that is initially irradiated is absorbed and converted into heat by the support substrate of the metal foil. The heat that is transformed is diffused over time t-t1 The region defined by the heat diffusion length L shown by the formula (1).

熱擴散長L=2×[熱擴散率α×(t-t1)]1/2．．．．(1) Thermal diffusion length L = 2 × [thermal diffusivity α × (t-t1)] 1/2. . . . (1)

如式(1)所示般，熱擴散長是成為熱擴散率與被照射脈衝雷射光La1起經過時間t-t1的乘積的平方根的2倍。熱擴散率是支撐基板的材質的金屬箔固有的物性值，藉由雷射閃光法來測定。 As shown in the formula (1), the thermal diffusion length is twice the square root of the product of the thermal diffusivity and the elapsed time t-t1 from the pulsed laser light La1. The thermal diffusivity is a physical property value inherent to the metal foil of the material of the support substrate, and is measured by a laser flash method.

在步驟(f)中，朝驅動電路基板101飛出的薄膜片是移動於施體基板220與驅動電路基板101之間的空間，到達驅動電路基板101而附著。藉此，如步驟(g)所示般，在驅動電路基板101的有機EL元件部110上形成由第1有機膜21所構成的薄膜圖案23。此薄膜圖案24會成為包含圖1所示的發光層之有機膜106。 In the step (f), the film sheet flying toward the drive circuit board 101 is moved in a space between the donor substrate 220 and the drive circuit board 101, and reaches the drive circuit board 101 to be attached. Thereby, as shown in the step (g), the thin film pattern 23 composed of the first organic film 21 is formed on the organic EL element portion 110 of the drive circuit substrate 101. This thin film pattern 24 becomes an organic film 106 including the light-emitting layer shown in FIG.

藉由重複在以上的步驟(a)~步驟(f)所示的工程，可按發光的色別將包含發光層的有機膜106予以圖案分離成106R、106G、106B。 By repeating the processes shown in the above steps (a) to (f), the organic film 106 including the light-emitting layer can be patterned into 106R, 106G, and 106B in terms of light emission.

上述的工程，在步驟(d)中，雷射是使用具有重複頻率的脈衝雷射。脈衝雷射是可舉Nd：YAG雷射、Nd：YVO₄、Nd：YLF雷射、鈦藍寶石雷射，但並非限於此。雷射光La的波長是選擇被支撐層20的材質吸收的光的波長。具體而言，成為UV光、可視光、紅外線區域及寬廣的波長區域。 In the above project, in step (d), the laser is a pulsed laser having a repetition frequency. The pulsed laser is a Nd:YAG laser, a Nd:YVO ₄ , a Nd:YLF laser, or a titanium sapphire laser, but is not limited thereto. The wavelength of the laser light La is a wavelength at which light absorbed by the material of the support layer 20 is selected. Specifically, it is a UV light, a visible light, an infrared ray region, and a wide wavelength region.

圖3是表示脈衝雷射光列的時間變化的圖表。 Fig. 3 is a graph showing temporal changes in a pulsed laser light train.

在經過時間t=t1，第1脈衝光31會被照射。其次，在t=t2、t3，第2脈衝光32、第3脈衝光33會被照射。重複使用脈衝雷射時，各脈衝光所被照射的經過時間的間隔是相等，為△t0。並且，最好各脈衝光的脈衝寬是0.1~10ns的範圍。 At the elapse of time t=t1, the first pulsed light 31 is irradiated. Next, at t=t2 and t3, the second pulse light 32 and the third pulse light 33 are irradiated. When the pulse laser is repeatedly used, the elapsed time interval at which each pulse light is irradiated is equal, which is Δt0. Further, it is preferable that the pulse width of each pulse light is in the range of 0.1 to 10 ns.

而且，在步驟(e)的工程中，圖4是表示被照射第2脈衝雷射光為止的熱擴散區域的模式圖。圖4是假設被照射第2脈衝光的經過時間t=t2-t1的熱擴散長L2要比支撐基板的板厚d大。φ是被集光的脈衝雷射光的直徑。在圖4中，擴散後的熱是至t=t2為止到達至支撐基板的雷射光入射面的相反側的面，因此熱會擴散於直徑φ+2L2，高度d的圓柱41內。當L2小於d時，圓柱是成為直徑φ+2L2，高度L2。若將圓柱41的體積設為Va，則同圓柱41內的溫度上昇△T是以式(2)來表示。 Further, in the process of the step (e), FIG. 4 is a schematic view showing a heat diffusion region until the second pulsed laser beam is irradiated. 4 is assuming that the thermal diffusion length L2 of the elapsed time t=t2-t1 of the second pulsed light is larger than the thickness d of the support substrate. φ is the diameter of the pulsed laser light that is collected. In FIG. 4, the heat after the diffusion reaches the surface on the opposite side to the laser light incident surface of the support substrate until t=t2, so the heat is diffused into the cylinder 41 having the diameter φ+2L2 and the height d. When L2 is smaller than d, the cylinder becomes the diameter φ+2L2 and the height L2. When the volume of the cylinder 41 is Va, the temperature rise ΔT in the same cylinder 41 is expressed by the formula (2).

△T=Ep/(Va×ρ×σ)．．．．(2) △ T = Ep / (Va × ρ × σ). . . . (2)

在此，Ep是第1脈衝雷射光31的脈衝能量，ρ是支撐基板20的密度，σ是支撐基板20的比熱。因此，形成有機膜的支撐基板的表面的溫度是以T0+△T來表示。選擇脈衝雷射光列、支撐基板20的條件，而使此溫度能夠符合比有機膜的蒸鍍溫度TEV低那樣的條件之式(3)。 Here, Ep is the pulse energy of the first pulsed laser light 31, ρ is the density of the support substrate 20, and σ is the specific heat of the support substrate 20. Therefore, the temperature of the surface of the support substrate on which the organic film is formed is represented by T0 + ΔT. The condition of the pulsed laser beam and the support substrate 20 is selected so that the temperature can conform to the condition (3) which is lower than the vapor deposition temperature TEV of the organic film.

T0+△T<TEV．．．．(3) T0+△T<TEV. . . . (3)

例如，藉由縮小雷射光的Ep來縮小△T。或，拉長t=t1~t2的時間間隔，亦即降低雷射光的重複頻率1/(△t0)來縮小△T。或，增厚支撐基板的板厚d來縮小 △T。 For example, ΔT is reduced by reducing the Ep of the laser light. Or, the time interval of t=t1~t2 is elongated, that is, the repetition frequency 1/(Δt0) of the laser light is reduced to reduce ΔT. Or, thicken the thickness d of the support substrate to reduce △T.

蒸鍍溫度TEV是被定義為固體材料藉由加熱來氣化的溫度或經溶融而氣化的溫度。具體而言，被定義為真空下的飽和蒸氣壓成為0.1Pa的溫度。飽和蒸氣壓是在真空下由材料的熱重量變化測定來算出。 The vapor deposition temperature TEV is defined as the temperature at which the solid material is vaporized by heating or the temperature at which it is vaporized by melting. Specifically, it is defined as a temperature at which the saturated vapor pressure under vacuum becomes 0.1 Pa. The saturated vapor pressure is calculated from the change in the thermogravimetric change of the material under vacuum.

被照射第1脈衝雷射光31之後在同位置照射第2脈衝雷射光32、第3脈衝雷射光33。藉此，傳播於支撐基板內部的衝撃波會被引起，藉由產生的衝撃波，被層疊於該場所的第1有機膜21會剝離。第1有機膜21剝離而形成的薄片22是由產生的衝撃波來取得能量而朝驅動電路基板101飛出。 After the first pulsed laser light 31 is irradiated, the second pulse laser light 32 and the third pulse laser light 33 are irradiated at the same position. Thereby, the pulsation wave propagating inside the support substrate is caused, and the first organic film 21 laminated on the place is peeled off by the generated blast wave. The sheet 22 formed by peeling off the first organic film 21 is made to generate energy by the generated wave, and flies out toward the drive circuit board 101.

其次，圖5是表示將脈衝雷射光列予以照射掃描的方法的模式圖。對形成有有機膜21的支撐基板20照射第1脈衝雷射光51。照射第1脈衝雷射光之後△t0後，照射第2脈衝雷射光52。此時，第2脈衝雷射光的照射位置是以能夠與照射第1脈衝雷射光的位置部分重疊的方式掃描。最好重疊的區域是脈衝射束的一半以上的面積重疊那樣的掃描條件。同條件，掃描區域是最低照射2次的脈衝。如此一來，與重複照射於同位置時同樣，傳播於支撐基板內部的衝撃波會被引起，藉由產生的衝撃波，被重疊於該場所的第1有機膜21會剝離。第1有機膜21剝離而形成的薄片22是由產生的衝撃波來取得能量而朝驅動電路基板101飛出。 Next, Fig. 5 is a schematic view showing a method of irradiating a pulsed laser beam by scanning. The first pulsed laser light 51 is irradiated onto the support substrate 20 on which the organic film 21 is formed. After illuminating the first pulse of the laser light, Δt0, the second pulsed laser light 52 is irradiated. At this time, the irradiation position of the second pulsed laser light is scanned so as to be partially overlapped with the position at which the first pulsed laser light is irradiated. Preferably, the overlapping regions are scanning conditions in which the area of more than half of the pulse beam overlaps. Under the same conditions, the scanning area is the pulse with the lowest illumination 2 times. As described above, similarly to the repeated irradiation of the same position, the pulsation wave propagating inside the support substrate is caused, and the first organic film 21 which is superposed on the place is peeled off by the generated blast wave. The sheet 22 formed by peeling off the first organic film 21 is made to generate energy by the generated wave, and flies out toward the drive circuit board 101.

如以上所述般，若根據本發明之有機EL基板的形成 方法，則可取得其次那樣的效果。 As described above, the formation of the organic EL substrate according to the present invention The method can achieve the next effect.

(1)不須使用微細化．大型化困難的金屬遮罩(蒸鍍遮罩)。又，由於是不使用金屬遮罩的有機膜形成，所以異物的影響或對蒸鍍遮罩的接觸所造成的損傷等也可抑制。 (1) No need to use micro-finishing. A metal mask (evaporation mask) that is difficult to enlarge. Further, since it is formed of an organic film that does not use a metal mask, the influence of foreign matter or damage to the contact of the vapor deposition mask can be suppressed.

(2)由於對包含分離形成所必要的發光層之有機膜的成膜限制少，因此有機膜的高品質化成為可能。亦即，有助於發光效率提升及長壽命化。 (2) Since the film formation restriction of the organic film containing the light-emitting layer necessary for separation formation is small, it is possible to improve the quality of the organic film. That is, it contributes to an improvement in luminous efficiency and a long life.

(3)一邊維持施體基板上所形成的第1有機膜的層構成，一邊形成有機膜圖案。由於對薄膜層往施體基板的形成是無限制，因此可不使工程數增加地製作使用各種膜的層疊構造。 (3) An organic film pattern is formed while maintaining the layer configuration of the first organic film formed on the donor substrate. Since the formation of the film layer to the donor substrate is not limited, it is possible to produce a laminated structure using various films without increasing the number of works.

其次，說明有關2種類的金屬施體薄板的製造方法。圖6是表示具有實施例1的凹凸構造的金屬施體薄板的製造方法的剖面圖。在圖6中，支撐基板620是以2種類的金屬薄板60、61所構成。對於使衝撃波產生的金屬薄板61，在不照射雷射的部分是部分地形成厚的金屬薄板60。藉此，由於有機膜的剝離是藉由金屬薄板60來決定，因此會被進行端面漂亮的圖案轉印。 Next, a method of manufacturing two types of metal donor sheets will be described. Fig. 6 is a cross-sectional view showing a method of manufacturing a metal donor sheet having the uneven structure of the first embodiment. In FIG. 6, the support substrate 620 is composed of two types of metal thin plates 60 and 61. For the thin metal plate 61 which generates the punching wave, a thick metal thin plate 60 is partially formed in a portion where the laser beam is not irradiated. Thereby, since the peeling of the organic film is determined by the thin metal plate 60, a beautiful pattern transfer of the end face is performed.

其次，圖7是表示具有實施例1的2層構造之金屬施體薄板的製造方法的剖面圖。在圖7中，支撐基板是以2種類的金屬薄板70、71所構成。使衝撃波產生的金屬薄板71相較於位在雷射照射面側的金屬薄板70，板厚薄，熱擴散率低。因此，產生的衝撃波的頻率低，轉印能量 強，更低的雷射功率的轉印可能。 Next, Fig. 7 is a cross-sectional view showing a method of manufacturing a metal-coated thin plate having the two-layer structure of the first embodiment. In FIG. 7, the support substrate is composed of two types of metal thin plates 70 and 71. The thin metal plate 71 generated by the punching wave is thinner than the thin metal plate 70 positioned on the side of the laser irradiation surface, and has a low thermal diffusivity. Therefore, the frequency of the generated wave is low, and the transfer energy Strong, lower laser power transfer possible.

藉由利用本發明，可有機EL面板的高精細化、大畫面化、畫面的高亮度化、長壽命化，在大面積的主基板形成多數的有機EL基板，提升每一個的有機EL面板的製造成本的降低、製造良品率等。 By using the present invention, it is possible to form a plurality of organic EL substrates on a large-area main substrate by high-definition, large-screen, high-intensity, and long-life of the organic EL panel, and to enhance each of the organic EL panels. Reduction in manufacturing costs, manufacturing yield, and the like.

圖1所示的有機EL基板100是在驅動電路基板101上依序形成平坦化層102及第1電極103、有機膜共通層105之後，藉由本發明來形成圖案分離的有機膜106，之後，形成有機膜共通層107及共通層的第2電極108。 The organic EL substrate 100 shown in FIG. 1 is formed by sequentially forming the planarization layer 102, the first electrode 103, and the organic film common layer 105 on the drive circuit substrate 101, and then forming the organic film 106 separated by the pattern by the present invention. The organic film common layer 107 and the second electrode 108 of the common layer are formed.

在實施例1所示之作為有機EL元件的有機膜的具體例，可舉發光層的主體材料，使添加於發光層的各發光色摻雜劑，電洞注入層，電洞輸送層，電子輸送層，及電子注入層。並且，有機EL層的無機層的具體例，可舉電子注入層。以下說明有關各層的材料。 Specific examples of the organic film as the organic EL element shown in the first embodiment include a host material of the light-emitting layer, and each of the light-emitting color dopants added to the light-emitting layer, the hole injection layer, the hole transport layer, and the electrons. Transport layer, and electron injection layer. Further, specific examples of the inorganic layer of the organic EL layer include an electron injecting layer. The materials related to each layer are explained below.

<主體> <main body>

主體材料是使用咔唑衍生物，芴衍生物或芳基矽烷衍生物等為理想。為了取得效率佳的發光，主體材料的激發能量比藍色摻雜劑的激發能量更充分大為理想。另外，激發能量是利用發光光譜(emission spectrum)來測定。 The host material is preferably a carbazole derivative, an anthracene derivative or an aryl decane derivative. In order to obtain efficient luminescence, the excitation energy of the host material is more sufficiently larger than the excitation energy of the blue dopant. Further, the excitation energy is measured by an emission spectrum.

<藍色摻雜劑> <Blue dopant>

藍色摻雜劑是在400nm~500nm之間存在室溫之PL光譜的最大強度。藍色摻雜劑的主架構是例如可舉苝，銥 錯合物(Bis(3、5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium(III))：FIrpic等)。由發光效率或載體傳導的觀點來看，藍色摻雜劑的濃度是對於主體而言10wt%以上為理想。最好藍色摻雜劑的重量平均分子量是500以上3000以下。 The blue dopant is the maximum intensity of the PL spectrum in which room temperature is present between 400 nm and 500 nm. The main structure of the blue dopant is, for example, 铱 Bis (3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium(III)): FIrpic et al). From the viewpoint of luminous efficiency or carrier conduction, the concentration of the blue dopant is preferably 10% by weight or more for the host. Preferably, the blue dopant has a weight average molecular weight of 500 or more and 3,000 or less.

<綠色摻雜劑> <Green dopant>

綠色摻雜劑是在500nm~590nm之間存在室溫之PL光譜的最大強度。綠色摻雜劑的主架構是例如可舉香豆素及其衍生物，銥錯合物(Tris(2-phenylpyridine)iridium(III)：以下Ir(ppy)₃、等)。綠色摻雜劑的重量平均分子量是最好為500以上3000以下。 The green dopant is the maximum intensity of the PL spectrum where room temperature is present between 500 nm and 590 nm. The main structure of the green dopant is, for example, coumarin and a derivative thereof, and Tris(2-phenylpyridine)iridium(III): Ir(ppy) ₃ or the like. The weight average molecular weight of the green dopant is preferably 500 or more and 3,000 or less.

<紅色摻雜劑> <red dopant>

紅色摻雜劑是在590nm~780nm之間存在室溫之PL光譜的最大強度。紅色摻雜劑的主架構是例如可舉紅螢烯，(E)-2-(2-(4-(dimethylamino)styryl)-6-methyl-4H-pyran-4-ylidene)malononitrile(DCM)及其衍生物，銥錯合物(Bis(1-phenylisoquinoline)(acetylacetonate)iridium(III)等)，鋨錯合物，銪錯合物。 The red dopant is the maximum intensity of the PL spectrum with room temperature between 590 nm and 780 nm. The main structure of the red dopant is, for example, erythrin, (E)-2-(2-(4-(dimethylamino)styryl)-6-methyl-4H-pyran-4-ylidene)malononitrile (DCM) and Its derivative, Bis(1-phenylisoquinoline) (acetylacetonate) iridium (III), etc., ruthenium complex, ruthenium complex.

<電洞注入層> <hole injection layer>

所謂電洞注入層是使用在改善發光效率或壽命之目的。又，雖無特別必須，但可使用在緩和陽極的凹凸之目 的。亦可將電洞注入層設為單層或複數層。電洞注入層是PEDOT(聚(3、4-伸乙基二氧基噻吩))：PSS(聚苯乙烯磺酸酯)等的導電性高分子為理想。其他亦可使用聚吡咯系或三苯胺系的聚合物材料。並且，與低分子(重量平均分子量10000以下)材料系組合常被使用的酞花青類化合物或星爆型胺(star burst type amine)系化合物也可適用。 The so-called hole injection layer is used for the purpose of improving luminous efficiency or life. Moreover, although it is not particularly necessary, it can be used to alleviate the unevenness of the anode. of. The hole injection layer can also be set as a single layer or a plurality of layers. The hole injection layer is preferably a conductive polymer such as PEDOT (poly(3,4-extended ethyldioxythiophene)): PSS (polystyrene sulfonate). Other polypyrrole or triphenylamine based polymeric materials may also be used. Further, a phthalocyanine compound or a starburst type amine compound which is often used in combination with a low molecular weight (weight average molecular weight of 10,000 or less) material is also applicable.

<電洞輸送層> <hole transport layer>

電洞輸送層是對發光層供給電洞的層。廣義的是電洞注入層、電子阻止層也含在電洞輸送層。亦可將電洞輸送層設為單層或複數層。電洞輸送層是可使用星爆型胺(star burst type amine)系化合物或茋衍生物，腙衍生物，噻吩衍生物，芴衍生物等。並非限於該等的材料，即使將該等的材料併用2種以上也無妨。為了將電洞輸送層低電阻化，使驅動電壓降低，亦可在電洞輸送層中添加電子接受性材料。 The hole transport layer is a layer that supplies a hole to the light-emitting layer. In a broad sense, the hole injection layer and the electron blocking layer are also contained in the hole transport layer. The hole transport layer can also be set as a single layer or a plurality of layers. As the hole transport layer, a star burst type amine compound or an anthracene derivative, an anthracene derivative, a thiophene derivative, an anthracene derivative or the like can be used. It is not limited to these materials, and even if these materials are used in combination of two or more types. In order to reduce the resistance of the hole transport layer and lower the driving voltage, an electron-accepting material may be added to the hole transport layer.

<電子輸送層> <Electronic transport layer>

電子輸送層是對發光層供給電子的層。廣義的是電子注入層、電洞阻止層也含在電子輸送層。亦可將電子輸送層設為單層或複數層。此電子輸送層的材料是例如可使用雙(2-甲基-8-羥基喹啉)-4-(苯基苯酚)鋁(BAlq)或三(8-羥基喹啉)鋁(Alq₃)，Tris(2、4、6-trimethyl- 3-(pyridin-3-yl)phenyl)borane(3TPYMB)，1、4-Bis(triphenylsilyl)benzene(UGH2)，噁二唑衍生物，***衍生物，富勒烯衍生物，啡啉衍生物，喹啉衍生物，矽茂衍生物等。為了將電子輸送層低電阻化，使元件的驅動電壓降低，亦可在電子輸送層中添加電子供給性材料。 The electron transport layer is a layer that supplies electrons to the light emitting layer. In a broad sense, the electron injecting layer and the hole blocking layer are also contained in the electron transporting layer. The electron transport layer can also be set as a single layer or a plurality of layers. The material of the electron transport layer is, for example, bis(2-methyl-8-hydroxyquinoline)-4-(phenylphenol)aluminum (BAlq) or tris(8-hydroxyquinoline)aluminum (Alq ₃ ). Tris (2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), 1,4-Bis(triphenylsilyl)benzene (UGH2), oxadiazole derivative, triazole derivative, Fullerene derivatives, phenanthroline derivatives, quinoline derivatives, oxime derivatives, and the like. In order to lower the resistance of the electron transport layer and lower the driving voltage of the element, an electron supply material may be added to the electron transport layer.

所謂電子接受性材料是意指容易放出電子(容易交給電子接受性材料以外的分子)的材料。電子供給性材料是例如可舉N-ethyl-1、10-phenanthrolium(NEP)衍生物，Methyltriphenylphosphonium(MTPP)衍生物，N、N、N、N-tetramethyl-p-phenylenendiamine(TMPD)衍生物，rhodamine B chloride衍生物，pyronin B chloride衍生物，8-Hydroxyquinolinolato-lithium(Liq)衍生物等。 The electron accepting material means a material which is easy to emit electrons (it is easy to give to molecules other than the electron accepting material). The electron-donating material is, for example, a N-ethyl-1, 10-phenanthrolium (NEP) derivative, a Methyltriphenylphosphonium (MTPP) derivative, a N, N, N, N-tetramethyl-p-phenylenendiamine (TMPD) derivative, rhodamine. B chloride derivative, pyronin B chloride derivative, 8-Hydroxyquinolinolato-lithium (Liq) derivative, and the like.

<電子注入層> <electron injection layer>

電子注入層是使從陰極往電子輸送層的電子注入效率提升。具體而言，最好是氟化鋰，氟化鎂，氟化鈣，氟化鍶，氟化鋇，氧化鎂，氧化鋁。當然並非限於該等的材料，即使是併用該等的材料兩種以上也無妨。 The electron injecting layer enhances the efficiency of electron injection from the cathode to the electron transporting layer. Specifically, lithium fluoride, magnesium fluoride, calcium fluoride, barium fluoride, barium fluoride, magnesium oxide, and aluminum oxide are preferred. Of course, it is not limited to these materials, and it is also possible to use two or more of these materials in combination.

<面板> <panel>

在此所謂的面板是指將有機發光元件使用在畫素的顯示裝置。有機發光顯示裝置是有單純矩陣有機發光顯示裝置及主動矩陣有機發光顯示裝置。 The term "panel" as used herein refers to a display device in which an organic light-emitting element is used in a pixel. The organic light emitting display device has a simple matrix organic light emitting display device and an active matrix organic light emitting display device.

單純矩陣有機發光顯示裝置是在複數的陽極線與陰極 線所交叉的位置形成有電洞輸送層、發光層、電子輸送層等的有機膜，各畫素是在1圖框(frame)期間中，僅選擇時間點亮。選擇時間是以陽極線數來除以1圖框期間的時間寬。 A simple matrix organic light emitting display device is in a plurality of anode lines and cathodes An organic film such as a hole transport layer, a light-emitting layer, or an electron transport layer is formed at a position where the line intersects, and each pixel is illuminated only in a frame period. The selection time is the time width divided by the number of anode lines divided by 1 frame.

主動矩陣有機發光顯示裝置是在構成各畫素的有機EL(發光)元件連接由2~4個的薄膜電晶體的開關元件及電容所構成的驅動元件，1圖框期間中的全點亮成為可能。因此，不必提高亮度，可拉長有機發光元件的壽命。 In the active matrix organic light-emitting display device, a switching element composed of two to four thin film transistors and a capacitor are connected to an organic EL (light-emitting) element constituting each pixel, and the full-lighting in one frame period becomes may. Therefore, it is not necessary to increase the brightness, and the life of the organic light emitting element can be elongated.

在此所謂的畫素是意指被多數配置於顯示裝置的畫面的縱橫，在顯示區域中顯示文字或圖表(graphic)的最小單位者。並且，所謂副畫素是意指在進行彩色顯示的顯示裝置中，將畫素更分割的最小單位者。就彩色畫像而言，一般是以紅、藍、綠3色的副畫素所構成的構造。副畫素的配置是有條紋配列，馬賽克配列，三角形(delta)配列。條紋配列是各色的副畫素排成1列。因此，就條紋配列而言，雷射轉印的掃描方向是最好在各色副畫素排成1列的方向進行。馬賽克配列是成為各色的副畫素排列於斜方向的配置。因此，雷射轉印的掃描方向是最好在各色副畫素排列成傾斜的方向進行。三角形配列是取紅、藍、綠的副畫素成為三角形的配置。因此，位於某副畫素的上下之他色的副畫素是只偏移副畫素的短邊方向的長度的一半。就此配列而言，雷射轉印的掃描方向是亦可為各色的副畫素所排列的斜方向，但因為副畫素間分離，所以最好是移動副畫素的長度方向，在短邊方向移動而移動至其次 的副畫素的長度方向的掃描方法。 The term "pixel" as used herein means the smallest unit in which characters or graphs are displayed in the display area by the vertical and horizontal of the screen which is mostly disposed on the display device. Further, the term "subpixel" means a minimum unit that divides pixels more in a display device that performs color display. In the case of a color image, it is generally a structure composed of sub-pixels of three colors of red, blue, and green. The configuration of the sub-pixels is striped, mosaic, and delta. The stripe arrangement is a sub-picture of each color arranged in one column. Therefore, in the case of the stripe arrangement, the scanning direction of the laser transfer is preferably performed in the direction in which the sub-pixels of the respective colors are arranged in one line. The mosaic arrangement is an arrangement in which the sub-pixels of the respective colors are arranged in an oblique direction. Therefore, the scanning direction of the laser transfer is preferably performed in a direction in which the sub-pixels of the respective colors are arranged in an oblique direction. The triangle arrangement is a configuration in which the sub-pixels of red, blue, and green are triangular. Therefore, the sub-pixels of the upper and lower colors of a certain pixel are only half of the length of the short side direction of the sub-pixel. In this arrangement, the scanning direction of the laser transfer is an oblique direction in which the sub-pixels of the respective colors are arranged, but since the sub-pixels are separated, it is preferable to move the length direction of the sub-pixels on the short side. Move in the direction and move to the next The scanning method of the length direction of the sub-pixel.

<雷射轉印設備> <Laser transfer equipment>

雷射轉印設備是由：進行基板的搬出入的裝載鎖定室、進行基板的搬送的搬送機械手臂(robot)、對有機EL基板蒸鍍有機膜的真空蒸鍍室、對金屬施體薄板蒸鍍有機膜的真空蒸鍍室、利用金屬施體薄板來進行雷射轉印的雷射轉印室所構成。又，由於此雷射轉印設備是彩色畫像顯示，所以最好設置對紅、綠、藍的發光色的副畫素電極進行雷射轉印的複數個雷射轉印室。 The laser transfer device is a transfer lock chamber that carries in and out of the substrate, a robot that transports the substrate, a vacuum deposition chamber that deposits an organic film on the organic EL substrate, and a metal thin plate. A vacuum deposition chamber for plating an organic film, and a laser transfer chamber for performing laser transfer using a metal donor sheet. Further, since the laser transfer device is a color image display, it is preferable to provide a plurality of laser transfer chambers for performing laser transfer on the sub-pixel electrodes of the red, green, and blue luminescent colors.

圖8是表示雷射轉印設備的一形態的模式圖。由進行基板的搬入之裝載鎖定室501來搬入有機EL基板。被搬入的有機EL基板是利用機械手臂室510的手臂來搬出入於各處理槽。首先，在前處理槽502中，進行下部電極的洗滌及表面處理。前處理是可舉大氣壓電漿、UV/O3處理、ICP電漿處理等，但並非限於此。其次，在有機蒸鍍室503中，以真空蒸鍍法來形成圖1所示的有機膜105。其次，在雷射轉印室504或506形成紅色發光層106R。同室使用的紅色金屬施體薄板是形成有在施體蒸鍍槽505轉印的有機膜。 Fig. 8 is a schematic view showing an embodiment of a laser transfer apparatus. The organic EL substrate is carried by the load lock chamber 501 into which the substrate is carried. The organic EL substrate that has been carried in is carried out into each of the processing tanks by the arm of the robot arm chamber 510. First, in the pretreatment tank 502, washing and surface treatment of the lower electrode are performed. The pretreatment may be, for example, atmospheric piezoelectric slurry, UV/O3 treatment, ICP plasma treatment, or the like, but is not limited thereto. Next, in the organic vapor deposition chamber 503, the organic film 105 shown in Fig. 1 is formed by a vacuum deposition method. Next, a red light-emitting layer 106R is formed in the laser transfer chamber 504 or 506. The red metal donor sheet used in the same chamber is formed with an organic film transferred in the donor vapor deposition tank 505.

圖8是對於2台的轉印室配置1台的施體蒸鍍室，但台數比是以雷射轉印與轉印的有機膜的形成的生產節拍(takt time)的比來決定。其次，在雷射轉印室507或509形成綠色發光層106G。綠色金屬施體薄板是形成有在 施體蒸鍍槽508轉印的有機膜。 Fig. 8 shows a one-piece vapor deposition chamber in which two transfer chambers are arranged. However, the number ratio is determined by the ratio of the production takt time of the formation of the organic film by the laser transfer and the transfer. Next, a green light-emitting layer 106G is formed in the laser transfer chamber 507 or 509. Green metal donor sheet is formed in The organic film transferred by the vapor deposition tank 508 is applied.

其次，有機EL基板是經由裝載鎖定室511來搬送至具有機械手臂室518的旁邊的群集，在雷射轉印室512或514形成藍色發光層106B。藍色金屬施體薄板是形成有在施體蒸鍍槽513轉印的有機膜。其次，在有機蒸鍍室515中形成圖1所示的有機膜107，在蒸鍍室516中形成第2電極。其次，在密封室517進行後述的密封，經由裝載鎖定室519搬出。 Next, the organic EL substrate is transported to the side having the robot arm chamber 518 via the load lock chamber 511, and the blue light-emitting layer 106B is formed in the laser transfer chamber 512 or 514. The blue metal donor sheet is formed with an organic film that is transferred in the donor vapor deposition tank 513. Next, the organic film 107 shown in FIG. 1 is formed in the organic vapor deposition chamber 515, and the second electrode is formed in the vapor deposition chamber 516. Next, sealing is performed in the sealed chamber 517, which will be described later, and is carried out via the load lock chamber 519.

圖9是表示別的雷射轉印設備的一形態的模式圖。從裝載鎖定室501搬入有機EL基板，在鄰接的前處理槽502中進行下部電極的洗滌及表面處理。其次，在有機蒸鍍室503中，圖1所示的有機膜105會以真空蒸鍍法來形成。其次，在雷射轉印室504或506形成紅色發光層106R。同室使用的紅色金屬施體薄板是形成有在施體蒸鍍槽505轉印的有機膜。同圖中，對於2台的轉印室配置1台的施體蒸鍍室，但台數比是以雷射轉印與轉印的有機膜的形成的生產節拍(takt time)的比來決定。 Fig. 9 is a schematic view showing an embodiment of another laser transfer device. The organic EL substrate is carried into the load lock chamber 501, and the lower electrode is washed and surface-treated in the adjacent pretreatment tank 502. Next, in the organic vapor deposition chamber 503, the organic film 105 shown in Fig. 1 is formed by a vacuum deposition method. Next, a red light-emitting layer 106R is formed in the laser transfer chamber 504 or 506. The red metal donor sheet used in the same chamber is formed with an organic film transferred in the donor vapor deposition tank 505. In the same figure, one set of vapor deposition chambers is disposed in two transfer chambers, but the ratio is determined by the ratio of the takt time of the formation of the organic film by laser transfer and transfer. .

其次，在雷射轉印室507或509形成綠色發光層106G。綠色金屬施體薄板是形成有在施體蒸鍍槽508轉印的有機膜。其次，在雷射轉印室512或514形成藍色發光層106B。藍色金屬施體薄板是形成有在施體蒸鍍槽513轉印的有機膜。其次，在有機蒸鍍室515中形成圖1所示的有機膜107，在蒸鍍室516中形成第2電極。其次，在密封室517進行後述的密封，經由裝載鎖定室519來搬 出。 Next, a green light-emitting layer 106G is formed in the laser transfer chamber 507 or 509. The green metal donor sheet is formed with an organic film that is transferred in the donor vapor deposition tank 508. Next, a blue light-emitting layer 106B is formed in the laser transfer chamber 512 or 514. The blue metal donor sheet is formed with an organic film that is transferred in the donor vapor deposition tank 513. Next, the organic film 107 shown in FIG. 1 is formed in the organic vapor deposition chamber 515, and the second electrode is formed in the vapor deposition chamber 516. Next, sealing is performed in the sealed chamber 517, which will be described later, and is moved via the load lock chamber 519. Out.

並且，雷射轉印是最好在以下的製程實施。利用金屬施體薄板來對於被搬入至雷射轉印室的第1有機EL基板進行雷射轉印。其次，搬入第2有機EL基板，調整同金屬施體薄板的位置，而利用有機薄膜所附著的金屬薄板區域來進行雷射轉印。其次，搬入第3有機EL基板，調整同金屬施體薄板的位置，而利用有機薄膜所附著的區域來進行雷射轉印。 Also, laser transfer is preferably carried out in the following processes. The first organic EL substrate carried into the laser transfer chamber is subjected to laser transfer using a metal donor sheet. Next, the second organic EL substrate is carried in, and the position of the metal thin plate is adjusted, and the metal thin plate region to which the organic film adheres is used for laser transfer. Next, the third organic EL substrate is carried in, the position of the metal-coated thin plate is adjusted, and the region where the organic film adheres is used for laser transfer.

金屬施體薄板與有機EL基板的對準是最好利用位於有機EL基板的背面之對準攝影機。對準攝影機是調整有機EL基板與雷射頭的位置關係，對第2有機EL基板、第3有機EL基板是調整同有機EL基板與金屬施體薄板的位置關係。藉此，金屬施體薄板全區域的有機薄膜會被轉印，因此材料利用效率會提升，金屬施體薄板的再生成為可能。 The alignment of the metal donor sheet with the organic EL substrate is preferably performed by using an alignment camera located on the back surface of the organic EL substrate. In the alignment camera, the positional relationship between the organic EL substrate and the laser head is adjusted, and the positional relationship between the organic EL substrate and the metal organic thin plate is adjusted for the second organic EL substrate and the third organic EL substrate. Thereby, the organic thin film in the entire region of the metal donor sheet is transferred, so that the material utilization efficiency is improved, and the regeneration of the metal donor sheet is possible.

[實施例2] [Embodiment 2]

圖10是表示實施例2的有機EL基板300的構成的模式圖。圖10是在驅動電路基板101上依序形成平坦化層102及第1電極103、堤部104、共通層的有機膜105之後，按各色藉由本發明來形成圖案分離的發光元件之有機膜106R、106G、106B及圖案分離的有機膜107R、107G、107B，然後形成共通層之第2電極108。 FIG. 10 is a schematic view showing a configuration of an organic EL substrate 300 of the second embodiment. 10 is an organic film 106R in which a light-emitting element of a pattern-separated light-emitting element is formed by the present invention by sequentially forming the planarization layer 102, the first electrode 103, the bank portion 104, and the organic film 105 of the common layer on the drive circuit substrate 101. 106G, 106B and the pattern-separated organic films 107R, 107G, and 107B, and then the second electrode 108 of the common layer is formed.

有機EL基板300是在圖案分離的發光元件之有機膜 106A、106B、106C包含有機膜107R、107G、107B。其他的構造或製造方法是與圖1所示的有機EL基板100相同。 The organic EL substrate 300 is an organic film of a light-emitting element separated in a pattern 106A, 106B, and 106C include organic films 107R, 107G, and 107B. Other configurations or manufacturing methods are the same as those of the organic EL substrate 100 shown in FIG. 1.

[實施例3] [Example 3]

圖11是表示實施例3的有機EL基板400的構成的模式圖。圖11是在驅動電路基板101上依序形成平坦化層102及第1電極103、堤部104之後，藉由本發明來形成圖案分離的有機膜105R、105G、105B及圖案分離的發光元件之有機膜106R、106G、106B，然後，形成共通層之有機膜107及共通層之第2電極108。 FIG. 11 is a schematic view showing a configuration of an organic EL substrate 400 of Example 3. 11 is an organic state in which the patterned organic film 105R, 105G, and 105B and the pattern-separated light-emitting elements are formed by sequentially forming the planarization layer 102, the first electrode 103, and the bank 104 on the drive circuit substrate 101. The films 106R, 106G, and 106B are then formed with the organic film 107 of the common layer and the second electrode 108 of the common layer.

有機EL基板400是在圖案分離的有機膜106R、106G、106B包含有機膜105R、105G、105B。其他的構造或製造方法是與圖1所示的有機EL基板100相同。 The organic EL substrate 400 includes organic films 105R, 105G, and 105B in the organic films 106R, 106G, and 106B separated by the pattern. Other configurations or manufacturing methods are the same as those of the organic EL substrate 100 shown in FIG. 1.

[實施例4] [Example 4]

圖12是表示實施例4的有機EL基板500的構成的模式圖。圖12是在驅動電路基板101上依序形成平坦化層102及第1電極103、堤部104之後，藉由本發明來形成圖案分離的有機膜105R、105G、105B，然後形成圖案分離的發光元件之有機膜106R、106G、106B，更形成圖案分離的有機膜107R、107G、107B，在其上形成第2電極108。 FIG. 12 is a schematic view showing a configuration of an organic EL substrate 500 of Example 4. 12, after the planarization layer 102, the first electrode 103, and the bank portion 104 are sequentially formed on the drive circuit substrate 101, the pattern-separated organic films 105R, 105G, and 105B are formed by the present invention, and then the pattern-separated light-emitting elements are formed. The organic films 106R, 106G, and 106B further form pattern-separated organic films 107R, 107G, and 107B, and the second electrode 108 is formed thereon.

有機EL基板500是在圖案分離的有機膜106包含有 機膜105R、105G、105B、及有機膜107R、107G、107B。其他的構造或製造方法是與圖1所示的有機EL基板100相同。 The organic EL substrate 500 is included in the organic film 106 separated by a pattern. The organic films 105R, 105G, and 105B and the organic films 107R, 107G, and 107B. Other configurations or manufacturing methods are the same as those of the organic EL substrate 100 shown in FIG. 1.

將利用本發明來形成的有機EL基板密封，藉此完成有機EL面板。利用密封劑來貼合驅動電路基板及密封玻璃，該驅動電路基板是設置具有藉由本發明來圖案分離的有機膜之有機EL元件，在驅動電路基板與密封玻璃之間的密封空間充填氮等的惰性氣體。 The organic EL substrate formed by the present invention is sealed, whereby the organic EL panel is completed. The drive circuit board is an organic EL element provided with an organic film which is patterned by the present invention by a sealant, and the sealed space between the drive circuit board and the sealing glass is filled with nitrogen or the like. Inert gas.

並且，亦可藉由樹脂薄板來被覆驅動電路的有機EL元件形成部，該驅動電路是設置具有藉由本發明來圖案分離後的有機膜之有機EL元件。樹脂薄板是可使用環氧系高分子化合物，丙烯酸系高分子化合物，聚醯亞胺系高分子化合物等。亦可使矽系絕緣層(矽氮化膜，矽氧化膜，矽氮化氧化膜)或鋁氧化膜等的無機系絕緣薄膜介於樹脂薄板與第2電極之間。並且，亦可取代密封玻璃而使用設有氣體屏障層的塑膠等。 Further, the organic EL element forming portion of the driving circuit may be coated with a resin sheet which is an organic EL element provided with an organic film which is patterned by the present invention. As the resin sheet, an epoxy polymer compound, an acrylic polymer compound, a polyimine polymer compound or the like can be used. An inorganic insulating film such as a lanthanum insulating layer (yttrium nitride film, tantalum oxide film, tantalum nitride oxide film) or an aluminum oxide film may be interposed between the resin sheet and the second electrode. Further, a plastic or the like provided with a gas barrier layer may be used instead of the sealing glass.

而且，藉由薄膜密封層來被覆設置有機EL元件的驅動電路基板的有機EL元件形成部，該有機EL元件是具有藉由本發明來圖案分離後的有機膜，可使有機EL面板變薄。薄膜密封層是作為前述無機系絕緣膜與有機系絕緣薄膜的多層膜使用。由於藉由樹脂薄板或薄膜密封層來壓住具有藉由本發明來圖案分離後的有機膜之有機EL元件，因此可取得提高被圖案化而轉印成膜之有機膜的密著力的效果。 In addition, the organic EL element forming portion of the driving circuit substrate on which the organic EL element is provided is covered with a film sealing layer, and the organic EL element has an organic film which is patterned by the present invention, and the organic EL panel can be thinned. The film sealing layer is used as a multilayer film of the inorganic insulating film and the organic insulating film. Since the organic EL element having the organic film which has been patterned by the present invention is pressed by the resin sheet or the film sealing layer, the effect of improving the adhesion of the organic film which is patterned and transferred into a film can be obtained.

另外，在實施例1~4是說明有關有機EL元件的發光層的圖案化。此發光層是具有作為活性層的機能。活性層是指進行元件的動作的部分，因此有機EL元件是指發光層的事。並且，有機薄膜電晶體(TFT)的情況，活性層是指藉由對閘極電極施加電壓來流動電流的有機半導體層。並且，在有機太陽電池中，活性層是指吸收光而形成的激發狀態會乖離成電洞及電子的有機半導體層。 Further, in Examples 1 to 4, the patterning of the light-emitting layer of the organic EL element was explained. This luminescent layer has a function as an active layer. The active layer refers to a portion that performs an operation of the element, and therefore the organic EL element refers to a light-emitting layer. Further, in the case of an organic thin film transistor (TFT), the active layer refers to an organic semiconductor layer that flows a current by applying a voltage to a gate electrode. Further, in the organic solar cell, the active layer refers to an organic semiconductor layer in which an excited state formed by absorbing light is separated into a hole and an electron.

[實施例5] [Example 5]

在本發明的實施例5中，圖13是表示本發明的實施例5的有機TFT裝置的剖面圖。製作圖13所示的構造的有機TFT裝置。在基板802上形成閘極絕緣電極802，在其上形成閘極絕緣膜803。在其上形成源極電極804及汲極電極805。對於在同基板的閘極電極上部以源極電極及汲極電極所包圍的區域，藉此在實施例1使用的雷射轉印方法來使有機半導體806圖案化，而製作有機TFT基板810。藉由本發明的雷射轉印來製作具有高精細的有機半導體層之有機TFT。 In the fifth embodiment of the present invention, FIG. 13 is a cross-sectional view showing an organic TFT device according to a fifth embodiment of the present invention. An organic TFT device having the structure shown in Fig. 13 was produced. A gate insulating electrode 802 is formed on the substrate 802, and a gate insulating film 803 is formed thereon. A source electrode 804 and a drain electrode 805 are formed thereon. The organic semiconductor 806 is patterned by the laser transfer method used in the first embodiment in the region surrounded by the source electrode and the drain electrode in the upper portion of the gate electrode of the same substrate to fabricate the organic TFT substrate 810. An organic TFT having a high-definition organic semiconductor layer is formed by laser transfer of the present invention.

[實施例6] [Embodiment 6]

在本發明的實施例6中，圖14是表示本發明的實施例6的有機太陽電池裝置的剖面圖。製作圖14所示的構造的有機太陽電池裝置。在基板900上形成第1電極901，且形成覆蓋其端部的絕緣堤部902。在其上形成共 通有機膜903。對於同基板的第1電極上部，藉由在實施例1使用的雷射轉印方法來形成層疊p型有機半導體904及n型有機半導體905的膜。在其上形成第2電極906，製作有機太陽電池基板910。藉由本發明的雷射轉印來製作具有高精細的活性層區域之有機太陽電池裝置。 In the sixth embodiment of the present invention, FIG. 14 is a cross-sectional view showing an organic solar battery apparatus according to a sixth embodiment of the present invention. An organic solar cell device having the structure shown in Fig. 14 was produced. The first electrode 901 is formed on the substrate 900, and an insulating bank portion 902 covering the end portion thereof is formed. Forming a total The organic film 903 is passed through. A film of the p-type organic semiconductor 904 and the n-type organic semiconductor 905 is laminated on the upper portion of the first electrode of the same substrate by the laser transfer method used in the first embodiment. The second electrode 906 is formed thereon to form an organic solar cell substrate 910. An organic solar cell device having a high-definition active layer region is produced by the laser transfer of the present invention.

[實施例7] [Embodiment 7]

圖15是表示適合於實施本發明的有機EL面板的製造方法之第7實施例的雷射轉印裝置201的構成圖。雷射轉印裝置201是具備：LD激發脈衝固體雷射的雷射振盪器1、前處理部、調節射束徑的射束徑調節部、將在射束徑調節部所被處理的雷射光照射於施體基板312的照射處理部、將薄的有機EL膜從施體基板312轉印至電路基板310的轉印部、及該等的統括控制部(未圖示)。 FIG. 15 is a configuration diagram showing a laser transfer device 201 according to a seventh embodiment of the method for manufacturing an organic EL panel of the present invention. The laser transfer device 201 is a laser oscillator including an LD excitation pulse solid laser, a preprocessing unit, a beam diameter adjusting unit that adjusts a beam diameter, and a laser beam to be processed in the beam diameter adjusting unit. The irradiation processing unit that irradiates the donor substrate 312, the transfer unit that transfers the thin organic EL film from the donor substrate 312 to the circuit board 310, and the integrated control unit (not shown).

前處理部是具備：ND濾光片2，其係用以調整由雷射振盪器1所振盪的脈衝雷射光3的輸出；及光擋板4，其係由用以在所望的時機切出雷射光的波卡爾器(Pockels cell)及偏光射束***器所構成。 The preprocessing unit includes an ND filter 2 for adjusting an output of the pulsed laser light 3 oscillated by the laser oscillator 1, and a light baffle 4 for cutting out at a desired timing. The laser light is composed of a Pockels cell and a polarized beam splitter.

射束徑調節部是具備：雷射擴束器(beam expander)5，其係用以調整來自光擋板(Shutter)4的雷射光的射束徑；雷射光分歧機構6，其係用以將雷射光的一部分分歧； 光束輪廓分析儀(beam profiler)7，其係計測分歧後的雷射光的空間強度分布；訊號處理部8，其係處理在光束輪廓分析儀7測定的空間強度分布訊號，抽出射束徑，與基準值作比較；及驅動器9，其係根據處理結果來驅動雷射擴束器5。 The beam diameter adjusting unit includes a beam expander 5 for adjusting a beam diameter of laser light from the shutter 4, and a laser light branching mechanism 6 for Dividing part of the laser light; a beam profiler 7, which measures the spatial intensity distribution of the laser light after the divergence; the signal processing unit 8 processes the spatial intensity distribution signal measured by the beam profile analyzer 7, extracts the beam path, and The reference value is compared; and the driver 9 drives the laser beam expander 5 in accordance with the processing result.

照射處理部是具備：光軸調整用反射鏡10及11，其係具備驅動機構(未圖示)，調整被分歧的雷射光的光軸；雷射光整形手段12，其係於結像面將雷射光調整成所望的形狀的強度分布；及投影透鏡15，其係將該被整形的光學像予以縮小投影於照射面上(試料面上)。 The irradiation processing unit includes optical axis adjusting mirrors 10 and 11 including a driving mechanism (not shown) for adjusting the optical axis of the branched laser light, and the laser beam shaping means 12 is attached to the image plane The laser beam is adjusted to have an intensity distribution of a desired shape; and the projection lens 15 is configured to reduce and project the shaped optical image onto the irradiation surface (sample surface).

轉印部是具備：搭載電路基板及施體基板16的平台17、及用以測定平台上的雷射光的空間強度分布的光束輪廓分析儀18、及比較在分析儀18所被測定的空間強度分布與基準強度分布的訊號處理裝置19。 The transfer unit includes a stage 17 on which the circuit board and the donor substrate 16 are mounted, and a beam profile analyzer 18 for measuring the spatial intensity distribution of the laser light on the stage, and comparing the spatial strength measured by the analyzer 18. A signal processing device 19 that distributes and sets the reference intensity distribution.

如後述的圖19所示般，有機EL薄膜304以均一的膜厚來形成於一主面側的施體基板及電路基板16是以施體基板312上形成有機EL薄膜304的側的面與電路基板310上形成電路的側的面能夠對向的方式來保持於真空腔室50內的平台17上。並且，在真空腔室50內部設有光束輪廓分析儀18。 As shown in FIG. 19, which will be described later, the donor substrate and the circuit board 16 which are formed on the main surface side of the organic EL film 304 with a uniform film thickness are the side surface on which the organic EL film 304 is formed on the donor substrate 312. The side of the circuit substrate 310 on the side where the circuit is formed can be held on the stage 17 in the vacuum chamber 50 in a facing manner. Further, a beam profile analyzer 18 is provided inside the vacuum chamber 50.

雷射振盪器1是使用產生紫外或可視波長的脈衝雷射光者，特別是由輸出的大小、輸出的安定性等來看，雷射 二極體激發YVO₄雷射或雷射二極體激發Nd：YAG雷射的第二高次諧波(波長：532nm)為適當。但，並非限於此，亦可使用氬雷射、準分子雷射、YVO₄或YAG雷射的第3或第4高次諧波、以光纖結合的複數個半導體雷射等。 The laser oscillator 1 is a pulsed laser that generates ultraviolet or visible wavelengths, in particular, the size of the output, the stability of the output, etc., and the laser diode excites the YVO ₄ laser or the laser diode excitation. The second higher harmonic (wavelength: 532 nm) of the Nd:YAG laser is appropriate. However, it is not limited thereto, and an argon laser, a quasi-molecular laser, a third or fourth harmonic of a YVO ₄ or YAG laser, a plurality of semiconductor lasers combined by an optical fiber, or the like may be used.

作為構成光擋板4的零件，除了波卡爾器(Pockels cell)以外，還可使用AO(音響光學)調製器。但，一般AO調製器與波卡爾器作比較，驅動頻率低，繞射效率為70~80%，有稍微低的缺點，但可使用。藉由如此使用波卡爾器4或AO調製器等的光擋板，可由雷射振盪器1的脈衝列(train)在所望的時機切出脈衝照射。 As the component constituting the light baffle 4, an AO (Acoustic Optical) modulator can be used in addition to the Pockels cell. However, the general AO modulator is compared with the wave card device, the driving frequency is low, the diffraction efficiency is 70-80%, and there is a disadvantage of being slightly lower, but it can be used. By thus using the light baffle of the waver 4 or the AO modulator or the like, the pulse irradiation can be cut out at a desired timing by the pulse train of the laser oscillator 1.

照射於施體基板312的雷射光3為了變換成適於雷射轉印的雷射光，而藉由雷射光整形手段12來整形成至少具有2個以上的均一的強度分布之矩形雷射光。來自氣體雷射振盪器或固體雷射振盪器的輸出射束通常是圓形持有高斯函數型的能量分布，因此無法就那樣適用在本發明的雷射轉印。若振盪器輸出充分大，則可充分地擴大射束徑，從中心部分之比較均一的部分切出必要的形狀，藉此取得大致均一的能量分布的任意的形狀，但捨去射束的周邊部分，能量的大部分會浪費。又，若在大型基板全面，以一條的雷射束來重複進行每畫素間距的轉印工程，則會有處理能力大幅度降低的問題。為了解決該等的缺點，將具有高斯函數型的分布之單一雷射脈衝變換成具有複數的均一的分布之雷射光，而使用具有雷射光整形手段及雷射 光分配(分歧)手段的機能之雷射光整形．分歧手段12。 The laser light 3 irradiated onto the donor substrate 312 is converted into a laser light suitable for laser transfer, and the laser light shaping means 12 is used to form rectangular laser light having at least two uniform intensity distributions. The output beam from a gas laser oscillator or a solid-state laser oscillator is generally circular in shape and has a Gaussian function-type energy distribution, and thus cannot be applied as such in the laser transfer of the present invention. When the oscillator output is sufficiently large, the beam diameter can be sufficiently enlarged, and a necessary shape can be cut out from a relatively uniform portion of the center portion, thereby obtaining an arbitrary uniform shape of the energy distribution, but the periphery of the beam is rounded off. In part, most of the energy is wasted. Further, if the transfer process per pixel interval is repeated with one laser beam in a large-sized substrate, there is a problem that the processing capability is greatly reduced. In order to solve these disadvantages, a single laser pulse having a Gaussian function type distribution is transformed into a laser beam having a complex uniform distribution, and a laser beam shaping method and a laser are used. Light distribution (differential) means the function of laser light shaping. Disagreement means 12.

將高斯函數型的不均一的強度分布的單一雷射光整型成複數的均一強度分布之手段的代表例，可舉繞射光學元件，但使用在本發明的雷射光整形．分歧手段12並非限於此，只要能夠將雷射光實現矩形狀均一或適於雷射轉印的能量分布，使用哪種的手段皆可。並且，作為將在雷射光整形．分歧手段12所被整形、分歧的雷射光3的空間強度分布予以原封不動保持下提高功率密度，往所望的間距縮小的手段，亦可在雷射光整形手段12與施體基板312之間***縮小投影透鏡(未圖示)，縮小投影光學像。 A representative example of a means for shaping a single laser light of a Gaussian functional type with a heterogeneous intensity distribution into a complex uniform intensity distribution is a diffractive optical element, but is used in the laser light shaping of the present invention. The divergent means 12 is not limited thereto, and any means can be used as long as the laser light can be made uniform in a rectangular shape or suitable for laser transfer. Also, as the laser will be shaped in the laser. The spatial intensity distribution of the laser light 3 that is shaped and diverged by the divergent means 12 is maintained as it is, and the power density is increased. The means for reducing the desired distance can also be inserted between the laser beam shaping means 12 and the donor substrate 312. A projection lens (not shown) reduces the projection optical image.

在此，詳細說明有關使用在本發明的雷射轉印的繞射光學元件的機能。圖16是說明藉由繞射光學元件20來將具有高斯函數型的強度分布之雷射光變換成複數(在圖16是4條)的均一的強度分布之機能的圖。 Here, the function of the diffractive optical element used in the laser transfer of the present invention will be described in detail. Fig. 16 is a view for explaining the function of converting the laser light having the Gaussian function type intensity distribution into a complex intensity distribution (four in Fig. 16) by the diffractive optical element 20.

繞射光學元件80是指在透明的平面基板上以光微影蝕刻(Photolithography)工程來製作可視光波長程度的階差圖案，使光通過該階差圖案，藉此在通過各圖案的雷射光產生光路長，自由地控制雷射光的波面、相位，在任意的結像面上以任意的分割數來形成任意的強度分布、形狀的雷射圖案之光學元件。繞射光學元件80是可將0次繞射光的取出效率設定成90%以上非常高，若與在準分子雷射光之類相干長度(Coherence length)短(可干涉性低)雷射的整形光學系使用的多透鏡陣列方式(Fly eye方式)等作比較，則為可效率佳地取出雷射光的能量之元 件。並且，繞射光學元件80是利用光的繞射來整形雷射光，因此具有固體雷射等相干長度長(可干涉性高)，在上述多透鏡陣列方式、Fly eye方式等以往的雷射光整形技術，整形困難的雷射光的整形光學系也可適用的優勢。而且，繞射光學元件80是以單體的元件來進行雷射光整形，因此光學系的維修的容易性的點也比上述2方式更有利。 The diffractive optical element 80 refers to a step pattern on which a visible light wavelength is formed by photolithography on a transparent planar substrate, and light is passed through the step pattern, thereby passing the laser light through each pattern. An optical element that generates a laser pattern having an arbitrary intensity distribution and shape by forming an arbitrary optical path length, freely controlling the wavefront and phase of the laser light, and forming an arbitrary number of divisions on an arbitrary image plane. The diffractive optical element 80 is a shaping optical which can set the extraction efficiency of the 0-order diffracted light to 90% or more, and is short to a coherence length (low interferability) laser such as excimer laser light. The multi-lens array method (Fly eye method) used for comparison is an energy element for efficiently extracting laser light. Pieces. Further, since the diffractive optical element 80 is configured to shape the laser light by the diffraction of the light, it has a long coherence length such as a solid laser (high interferability), and conventional laser beam shaping such as the multi-lens array method or the Fly eye method. The technique of shaping the optical system of difficult laser light is also applicable. Further, since the diffractive optical element 80 performs laser beam shaping by a single element, the ease of maintenance of the optical system is also more advantageous than the above two aspects.

圖16所示的繞射光學元件80是被設計成在具有高斯函數型的強度分布81的雷射光3射入元件中心時可在結像面84上形成所望形狀的均一強度分布85。入射雷射光3是高斯函數型強度分布81，且雷射光的中心位置、行進方向對於光軸83一致。此情況的光軸83是意指通過繞射光學元件80的中心位置，在對繞射光學元件表面垂直的方向延伸的軸。亦即，繞射光學元件80的中心與雷射光3的中心一致。在如此的狀態下，雷射光81射入繞射光學元件80時，結像面84的整形雷射光強度分布85是被變換成適於有機材料的轉印之均一強度分布。 The diffractive optical element 80 shown in Fig. 16 is designed to form a uniform intensity distribution 85 of a desired shape on the image plane 84 when the laser light 3 having the Gaussian function type intensity distribution 81 is incident on the center of the element. The incident laser light 3 is a Gaussian function type intensity distribution 81, and the center position and the traveling direction of the laser light are coincident with respect to the optical axis 83. The optical axis 83 in this case means an axis extending in a direction perpendicular to the surface of the diffractive optical element by the center position of the diffractive optical element 80. That is, the center of the diffractive optical element 80 coincides with the center of the laser light 3. In such a state, when the laser beam 81 is incident on the diffractive optical element 80, the shaped laser light intensity distribution 85 of the image plane 84 is converted into a uniform intensity distribution suitable for transfer of the organic material.

[實施例8] [Embodiment 8]

圖17是表示具有使用能量充分大的振盪器時的其他的雷射光分歧手段之雷射轉印裝置202的第2實施例的圖。圖18A、18B是表示其他的雷射光分歧手段的圖。圖18A所示的繞射光學元件30是使具有高斯函數型的強度分布31的雷射光3射入，使具有均一強度分布35的雷射 光形成在某結像面34上之雷射光整形手段。在繞射光學元件30的結像面34上，***形成有圖18B所示的任意的開口圖案例如規則性的矩形開口圖案之雷射光分歧(分配)手段的遮罩13，取得透過遮罩13的開口部13K而被分配的複數的雷射光。並且，如圖17所示般，亦可使複數的雷射光經由用以變換成平行光的中繼透鏡14、投影透鏡來結像於施體基板上。 Fig. 17 is a view showing a second embodiment of the laser transfer device 202 having another laser light divergence means when an oscillator having a sufficiently large energy is used. 18A and 18B are views showing other laser light divergence means. The diffractive optical element 30 shown in Fig. 18A is such that laser light 3 having a Gaussian function type intensity distribution 31 is incident to make a laser having a uniform intensity distribution 35. Light is formed by a laser beam shaping means on a certain image plane 34. A mask 13 in which a laser light divergence (distribution) means of an arbitrary opening pattern such as a regular rectangular opening pattern shown in FIG. 18B is formed is formed on the image plane 34 of the diffractive optical element 30, and a transmissive mask 13 is obtained. The plurality of laser lights are allocated to the opening portion 13K. Further, as shown in FIG. 17, a plurality of laser beams may be connected to the donor substrate via the relay lens 14 and the projection lens for conversion into parallel light.

若根據實施例8，則如圖18B所示般，只要將遮罩13的開口圖案13K設定成矩陣狀，便可形成在雷射掃描方向及與雷射掃描方向正交的方向排列複數雷射光的圖案，由於可對施體基板312進行複數列的重疊照射，因此可預料處理能力大幅度的提升。 According to the eighth embodiment, as shown in FIG. 18B, by setting the opening pattern 13K of the mask 13 in a matrix shape, it is possible to form a plurality of laser beams arranged in the laser scanning direction and the direction orthogonal to the laser scanning direction. Since the pattern of the donor substrate 312 can be superimposed in a plurality of columns, it is expected that the processing capability is greatly improved.

如後述的圖19所示般，有機EL膜以均一的膜厚來形成於一主面側的施體基板312及電路基板310是以施體基板上形成有機EL膜的側的面與電路基板上形成電路的側的面能夠對向的方式來保持於真空腔室50內的平台17上。另外，在實施例7、8是顯示將施體基板312、電路基板310及平台17保持於真空腔室50內的情況。此外，亦可採用：以鉗位框(clamping frame)等來密封對向配置的基板周邊部之後，藉由乾式泵、渦輪分子泵、低溫泵(皆未圖示)來真空保持施體基板312與電路基板310之間的空間那樣的形態。 The donor substrate 312 and the circuit substrate 310 which are formed on the main surface side with a uniform film thickness as shown in FIG. 19, which will be described later, are the side surface on which the organic EL film is formed on the donor substrate, and the circuit substrate. The side on which the side on which the circuit is formed can be held in a manner opposite to the platform 17 in the vacuum chamber 50. Further, in the seventh and eighth embodiments, the case where the donor substrate 312, the circuit substrate 310, and the stage 17 are held in the vacuum chamber 50 is shown. Further, after the peripheral portion of the substrate disposed oppositely is sealed by a clamping frame or the like, the donor substrate 312 is vacuum-held by a dry pump, a turbo molecular pump, or a cryopump (none of which is shown). A form like the space between the circuit board 310.

施體基板312是由Ti、Ni、Cu、Fe、Au、Cr、Mo、W或含該等的合金的其中任一所構成的金屬板為適合，施 體基板的厚度是5~10微米程度為適合。在施體基板312之與電路基板310對向的面上是藉由真空蒸鍍法等預先以均一的膜厚來形成轉印至電路基板的有機EL膜。對向設置的施體基板與成膜用的電路基板之間隔是必須在基板面內保持於一定，為此，在電路基板上的畫素區域周邊或施體基板上的任何一方，設有藉由光微影蝕刻工程來形成的突起或間隔件為適(未圖示)。突起、或間隔件的厚度是數μm~數百μm，較理想是80~100μm程度為適，該等是藉由光微影蝕刻工程來形成。間隔件是按各畫素或以能夠包圍複數的畫素區域(在畫素區域不重疊)的方式配置於四方，但在包圍四方的間隔件框間設有間隙為適。藉由此間隙，隔著間隔件來使施體基板與電路基板之間保持於真空而對向時，以間隔件來隔開的區域也全部被保持於一定壓力。亦即，可藉由此突起、間隔件來將施體基板之形成有機EL膜的面與電路基板的間隔保持於一定。 The donor substrate 312 is made of a metal plate made of any one of Ti, Ni, Cu, Fe, Au, Cr, Mo, W or an alloy containing the same. The thickness of the bulk substrate is suitably 5 to 10 μm. On the surface of the donor substrate 312 that faces the circuit board 310, an organic EL film that is transferred to the circuit board is formed in advance by a vacuum deposition method or the like with a uniform film thickness. The distance between the donor substrate and the circuit substrate for film formation must be kept constant in the substrate surface. Therefore, it is provided on either the periphery of the pixel region on the circuit substrate or on the donor substrate. Protrusions or spacers formed by photolithography etching are suitable (not shown). The thickness of the protrusions or spacers is several μm to several hundreds μm, preferably 80 to 100 μm, which is formed by photolithography etching. The spacer is disposed on each of the pixels or in a pixel region that can surround the plurality of pixels (the pixel regions do not overlap), but a gap is provided between the spacer frames surrounding the square. By this gap, when the donor substrate and the circuit board are held in a vacuum by the spacers and opposed to each other, the regions partitioned by the spacers are all held at a constant pressure. In other words, the interval between the surface on which the organic EL film is formed on the donor substrate and the circuit board can be kept constant by the projections and the spacers.

其次，按照圖來說明有關可適用在本發明的各實施例的有機EL面板的製造方法。 Next, a method of manufacturing an organic EL panel applicable to each embodiment of the present invention will be described with reference to the drawings.

圖19(a)~(d)是顯示利用本發明的雷射轉印方法來將有機EL膜304轉印於電路基板310上的工程的一例圖。圖19是矩陣狀轉印的情況，以其1列為代表進行說明。如圖19(a)所示般，對於在金屬箔上預先形成均一的膜厚的有機EL膜304之施體基板312，藉由圖16所示的雷射光整形．分歧手段12之繞射光學元件80來將雷射光3分歧成4條具有均一的強度分布的雷射光。然後， 對於施體基板312相對地掃描往箭號的方向分歧的雷射光，從圖19(a)往圖(d)依序使移動於所望區域照射。此時，對於轉印有機EL膜304的相對座標0~X7(轉印區域320~轉印區域327)，以分歧的4條雷射光能夠按每一定的時間重疊照射之方式調整雷射掃描速度。 19(a) to 19(d) are diagrams showing an example of a process of transferring the organic EL film 304 onto the circuit board 310 by the laser transfer method of the present invention. Fig. 19 is a view showing a case of matrix transfer, and one row thereof will be described as a representative. As shown in Fig. 19 (a), the donor substrate 312 of the organic EL film 304 having a uniform film thickness formed on the metal foil is formed by laser light irradiation as shown in Fig. 16. The diffractive optical element 80 of the divergent means 12 divides the laser light 3 into four laser beams having a uniform intensity distribution. then, The donor substrate 312 is relatively scanned for laser light that is divergent in the direction of the arrow, and is sequentially irradiated from the desired region from FIG. 19(a) to FIG. At this time, with respect to the relative coordinates 0 to X7 (transfer region 320 to transfer region 327) of the transfer organic EL film 304, the laser scanning speed can be adjusted in such a manner that the four laser lights that are divergent can be superimposed and irradiated every certain time. .

或，此時，為了提高雷射照射時機的調整自由度，亦可利用EO調製器、AO調製器等的光擋板4(參照圖15)來進行脈衝的間拔，藉此以雷射能夠照射於所望區域之方式調整高頻振盪的雷射振盪器的脈衝列。 Alternatively, in order to increase the degree of freedom in adjusting the timing of the laser irradiation, the optical baffle 4 (see FIG. 15) such as an EO modulator or an AO modulator may be used to extract the pulses, thereby enabling the laser to be extracted. The pulse train of the high frequency oscillating laser oscillator is adjusted so as to illuminate the desired area.

在此，敘述有關往施體基板312上之藉由雷射光照射所產生的熱彈性波的產生機構、有機EL膜304的剝離機構。被照射雷射的金屬箔是以極表面來吸收雷射光能量。藉此，僅極表面附近的格子會局部性地熱膨脹。熱膨脹後的極表面附近的格子壓縮深度方向的格子，此壓縮變形會以音速傳播於格子中。亦即產生彈性波。另一方面，自由表面(雷射照射面)是以解放被蓄積於格子的變形的形式膨脹。一旦傳播於深度方向的壓縮波到達背面，則這回背面的自由表面會起伏。對於起伏的表面所欲回到原來形狀的力量會作用，在相反方向反射傳播彈性波。 Here, a mechanism for generating a thermoelastic wave generated by irradiation of laser light onto the donor substrate 312 and a peeling mechanism of the organic EL film 304 will be described. The metal foil that is exposed to the laser absorbs the laser light energy on the extreme surface. Thereby, only the lattice near the extreme surface is locally thermally expanded. The lattice in the vicinity of the pole surface after thermal expansion compresses the lattice in the depth direction, and this compression deformation propagates in the lattice at the speed of sound. That is, an elastic wave is generated. On the other hand, the free surface (laser irradiation surface) is expanded in a form in which the liberation is accumulated in the lattice. Once the compression wave propagating in the depth direction reaches the back side, the free surface on the back side will fluctuate. For the undulating surface, the force that wants to return to the original shape will act, and the elastic wave will be reflected in the opposite direction.

如此一來，熱彈性波會往復於金屬箔中，可取得共振狀態。有機EL膜304是在一定時間以上接受金屬箔的共振狀態時，機械性地從金屬箔剝離，飛翔，轉印至對向的電路基板310。 As a result, the thermoelastic wave reciprocates in the metal foil, and a resonance state can be obtained. When the organic EL film 304 receives the resonance state of the metal foil for a certain period of time or longer, it is mechanically peeled off from the metal foil, and is transferred to the opposite circuit board 310.

此時，引起適於有機EL膜304的機械性剝離的彈性 波之雷射光強度是存在適當的範圍。圖20是表示有機膜的雷射剝離轉印製程的適當範圍的模式圖。橫軸，縱軸是分別對應於雷射重疊次數及雷射的能量密度。若將適當範圍以上的強度的雷射光照射於一主面，則可想像產生以下的二個現象。一個是被加熱的一主面的極表面的熱會傳導，多主面的有機膜溫度上昇的現象，另一個是振幅(能量)大的熱彈性波會到達至其他主面上，在通過有機EL膜中時產生波的傳播所造成的隔熱壓縮，膜中溫度上昇的現象。該等的複合因素，使膜中溫度不必要地上昇，容易發生損傷有機膜的不良情況。亦即，喪失作為有機EL膜的機能。 At this time, elasticity suitable for mechanical peeling of the organic EL film 304 is caused. The intensity of the laser light of the wave is in the proper range. Fig. 20 is a schematic view showing an appropriate range of a laser peeling transfer process of an organic film. The horizontal axis and the vertical axis correspond to the number of times of laser overlap and the energy density of the laser, respectively. When laser light of an intensity of an appropriate range or more is irradiated onto one main surface, it is conceivable that the following two phenomena occur. One is the heat conduction of the pole surface of the heated one main surface, the temperature of the organic film of the multi-main surface rises, and the other is that the thermoelastic wave with large amplitude (energy) reaches the other main surface, passing through the organic In the EL film, the phenomenon of heat insulation and compression caused by the propagation of waves occurs, and the temperature in the film rises. These composite factors cause the temperature in the film to rise unnecessarily, which is liable to cause damage to the organic film. That is, the function as an organic EL film is lost.

另一方面，在照射適當範圍以下的雷射光時，由於被引起的熱彈性波的振幅(能量)不大，因此在其次的雷射脈衝被照射以前衰減，無法取得為了使機械的剝離產生之充分的共振狀態。亦即，只在適當的次數重疊照射適當的強度的雷射脈衝時，可繼續取得適於剝離的適當的共振狀態。 On the other hand, when irradiating laser light of an appropriate range or less, since the amplitude (energy) of the thermoelastic wave to be generated is not large, it is attenuated before the next laser pulse is irradiated, and it is impossible to obtain the mechanical peeling. Full resonance state. That is, an appropriate resonance state suitable for peeling can be continuously obtained only when the appropriate intensity of the laser pulse is superimposed and applied at an appropriate number of times.

圖19(a)所示的施體基板312上的轉印區域320是所被分歧的4條雷射光的重疊照射完了的區域。藉由4次的雷射照射，一定時間以上所望的振幅強度的熱彈性波會繼續被引起，背面的有機EL膜304會作為剝離片305來轉印至電路基板310(相對座標0)。對轉印區域321(相對座標X1)是完成3次的雷射照射，對轉印區域322(相對座標X2)是完成2次的雷射照射，對轉印區域323 (相對座標X3)是完成1次的雷射照射，引起行進於照射區域的深度方向的熱彈性波，但有機膜是未被剝離轉印。並且，以虛線所包圍的區域330(相對座標X4~X7)是雷射未照射區域。 The transfer region 320 on the donor substrate 312 shown in Fig. 19 (a) is a region in which the overlapping four laser beams are irradiated. By the four-time laser irradiation, the thermoelastic wave of the amplitude intensity which is expected for a certain period of time or longer continues to be generated, and the organic EL film 304 on the back surface is transferred as the peeling sheet 305 to the circuit board 310 (relative coordinate 0). For the transfer region 321 (relative coordinate X1), laser irradiation is completed three times, and for the transfer region 322 (relative coordinate X2), laser irradiation is completed twice, and the transfer region 323 is applied. (relative coordinate X3) is a laser irradiation that is completed once, causing a thermoelastic wave traveling in the depth direction of the irradiation region, but the organic film is not peeled off. Further, a region 330 (relative coordinates X4 to X7) surrounded by a broken line is a laser non-irradiated region.

將一定時間經過後的狀態顯示於圖19(b)。雷射光3、光學元件80是對於與電路基板310對向的施體基板312相對性地移動，對轉印區域321(相對座標X1)進行第4次的雷射照射。藉此符合轉印區域321的有機膜剝離的條件，有機EL膜304會被剝離轉印至電路基板310上的座標X1。同時對轉印區域322(相對座標X2)進行第3次的雷射照射，對轉印區域323(相對座標X3)進行第2次的雷射照射，對轉印區域324(相對座標X4)進行第1次的雷射照射。 The state after a certain period of time has elapsed is shown in Fig. 19(b). The laser light 3 and the optical element 80 are relatively moved with respect to the donor substrate 312 opposed to the circuit board 310, and subjected to the fourth laser irradiation of the transfer region 321 (relative coordinate X1). Thereby, the organic EL film 304 is peeled off and transferred to the coordinate X1 on the circuit board 310 in accordance with the conditions in which the organic film of the transfer region 321 is peeled off. At the same time, the third irradiation of the transfer region 322 (relative coordinate X2) is performed, and the second laser irradiation is performed on the transfer region 323 (relative coordinate X3), and the transfer region 324 (relative coordinate X4) is performed. The first laser irradiation.

更將一定時間經過後的狀態顯示於圖19(c)。雷射光3、光學元件80是對於與電路基板310對向的施體基板312更相對性地往箭號的方向移動，對轉印區域322(相對座標X2)進行第4次的雷射照射。與先前同樣，符合轉印區域322(相對座標X2)的有機膜剝離的條件，有機EL膜304會被剝離轉印至電路基板310上的座標X2。同時對轉印區域323(相對座標X3)進行第3次的雷射照射，對轉印區域324(相對座標X4)進行第2次的雷射照射，對轉印區域325(相對座標X5)進行最初的雷射照射。 The state after a certain period of time has elapsed is shown in Fig. 19(c). The laser light 3 and the optical element 80 move in the direction of the arrow more toward the donor substrate 312 opposed to the circuit board 310, and perform the fourth laser irradiation on the transfer region 322 (relative coordinate X2). Similarly to the prior art, the organic EL film 304 is peeled off and transferred to the coordinate X2 on the circuit substrate 310 under the condition that the organic film of the transfer region 322 (relative to the coordinate X2) is peeled off. At the same time, the transfer region 323 (relative coordinate X3) is subjected to the third laser irradiation, the transfer region 324 (relative coordinate X4) is subjected to the second laser irradiation, and the transfer region 325 (relative coordinate X5) is performed. The initial laser exposure.

更將一定時間經過後的狀態顯示於圖19(d)。雷射 光3、光學元件80是對於與電路基板310對向的施體基板312更相對性地往箭號的方向移動，對轉印區域323(相對座標X3)進行第4次的雷射照射。與先前同樣，符合轉印區域323(相對座標X3)的有機膜剝離的條件，有機EL膜304會被剝離轉印至電路基板上的座標X3。同時對轉印區域324(相對座標X4)進行第3次的雷射照射，對轉印區域325(相對座標X5)進行第2次的雷射照射，對轉印區域326(相對座標X6)進行最初的雷射照射。 The state after a certain period of time has elapsed is shown in Fig. 19(d). Laser The light 3 and the optical element 80 move more toward the direction of the arrow with respect to the donor substrate 312 opposed to the circuit board 310, and perform the fourth laser irradiation on the transfer area 323 (relative coordinate X3). Similarly to the prior art, the organic EL film 304 is peeled off and transferred to the coordinate X3 on the circuit board under the condition that the organic film of the transfer region 323 (relative to the coordinate X3) is peeled off. At the same time, the third irradiation of the transfer region 324 (relative coordinate X4) is performed, and the second laser irradiation is performed on the transfer region 325 (relative coordinate X5), and the transfer region 326 (relative coordinate X6) is performed. The initial laser exposure.

之後也對於電路基板上所必要的區域以一定間隔重複雷射光的重疊照射。如此不會因為不必要的溫度上昇而使有機膜損傷的情形，可實現安定的轉印工程。 Subsequent irradiation of the laser light is also repeated at regular intervals for the necessary regions on the circuit board. In this way, the organic film is not damaged due to an unnecessary temperature rise, and a stable transfer process can be realized.

以上說明的轉印工程是在每一轉印區域使離散性地移動進行，但亦可以所被分歧的雷射光的公約數單位來使離散性地移動，既定次數使重疊於同轉印區域。例如，分歧數為4時，其公約數是1、2、4。2時，在同位置進行2次雷射照射，每2轉印區域使2次離散性地移動。4時，在同位置進行4次雷射照射，每4轉印區域使1次離散性地移動。一般，若將分歧數設為N，將N的公約數設為M，將移動次數設為P，將在同位置的照射次數設為L，則P=N/M，L=N/P。而且，在以上的說明是既定次數=分歧數，但亦可將分歧數設定成既定次數的整數倍。此情況，先設分歧數=既定次數，以前述的方法來進行照射，之後按照真的分歧數來使離散性地移動。 The transfer process described above is discretely moved in each transfer region, but may be discretely moved by a common number of laser light that is branched, and overlapped in the same transfer region for a predetermined number of times. For example, when the number of divergences is 4, the common divisor is 1, 2, and 4. When 2, the laser irradiation is performed twice at the same position, and the displacement is moved twice discretely every 2 transfer regions. At 4 o'clock, four times of laser irradiation were performed at the same position, and the movement was discretely performed once every four transfer regions. In general, if the number of divergence is N, the common divisor of N is M, the number of movements is P, and the number of irradiations at the same position is L, then P=N/M, L=N/P. Further, in the above description, the predetermined number of times = the number of divergences, but the number of divergences may be set to an integral multiple of a predetermined number of times. In this case, the number of divergence = the predetermined number of times is first set, and the irradiation is performed by the above method, and then the discrete number is moved in accordance with the true divergence number.

在以上說明的雷射轉印裝置，若根據實施例7、8，則可在一主面層疊有機EL薄膜的施體基板上的其他主面，一邊保持一定的時間間隔，一邊重疊照射具有均一的強度分布之複數的雷射光，藉此一面抑制有機EL薄膜的溫度上昇所造成的損傷，一面使合適於剝離有機EL薄膜的熱彈性波繼續產生於施體基板內。 According to the laser transfer device described above, according to the seventh and eighth embodiments, the other main surfaces on the donor substrate on which the organic EL thin film is laminated on one main surface can be uniformly irradiated while maintaining a constant time interval. The laser beam having a plurality of intensity distributions is used to suppress the damage caused by the temperature rise of the organic EL film, and the thermoelastic wave suitable for the peeling of the organic EL film is continuously generated in the donor substrate.

並且，在以上說明的雷射轉印裝置，若根據實施例7，則可將雷射束分歧，對於掃描方向直列配置，藉此使雷射束往同一處重疊照射，而使引起所望的熱彈性波時也不會有損處理能力來實現所望的雷射轉印製程。 Further, in the laser transfer device described above, according to the seventh embodiment, the laser beams can be branched and arranged in the scanning direction, whereby the laser beam is superimposed and irradiated to the same place, thereby causing the desired heat. Elastic waves do not detract from the processing power to achieve the desired laser transfer process.

而且，在以上說明的雷射轉印裝置，若根據實施例8，則可藉由將任意分配的開口圖案例如規則性的矩形開口圖案設成矩陣狀的遮罩來分配雷射光，使雷射束往同一處重疊照射，而使引起所望的熱彈性波時，不會有損處理能力來實現所望的雷射轉印製程。 Further, in the laser transfer device described above, according to the eighth embodiment, laser light can be distributed by arbitrarily assigning an open pattern such as a regular rectangular opening pattern to a matrix-shaped mask, so that the laser beam is irradiated. The beams are superimposed on the same side so that when the desired thermoelastic wave is caused, the processing capability is not impaired to achieve the desired laser transfer process.

[實施例9] [Embodiment 9]

圖7是表示適合實施本發明的有機EL面板的製造方法之實施例9的雷射轉印裝置203的構成圖。 FIG. 7 is a configuration diagram showing a laser transfer device 203 according to a ninth embodiment of the method for manufacturing an organic EL panel of the present invention.

實施例9的雷射轉印裝置203與實施例7相異的點是將雷射振盪器1直列且等間隔地設置複數台作為雷射光分配手段的點。並且，使用圖18所示的繞射光學元件30作為雷射光整形手段，直列且等間隔地形成雷射光。當然，亦可使用圖18所示將複數的雷射光分歧成複數的雷射光 整形．分歧手段12之繞射光學元件30來形成具有矩陣狀的均一的強度分布之雷射光。並且，亦可分別對於雷射光設置對於1條的雷射光形成光學系的構成要素的一部分或全部。而且，亦可將雷射振盪器1予以矩陣狀且等間隔地設置複數台。 The laser transfer device 203 of the ninth embodiment differs from the seventh embodiment in that the laser oscillator 1 is arranged in series and a plurality of stages are provided at equal intervals as a laser light distributing means. Further, the diffractive optical element 30 shown in FIG. 18 is used as a laser beam shaping means, and laser light is formed in series and at equal intervals. Of course, it is also possible to use a plurality of laser beams to divide into a plurality of laser lights as shown in FIG. Plastic surgery. The diffractive optical element 30 of the divergent means 12 forms laser light having a uniform intensity distribution in a matrix. Further, it is also possible to provide a part or all of the constituent elements of the optical system for one piece of laser light for the laser light. Further, the laser oscillators 1 may be provided in a matrix and at equal intervals.

在圖19所示的轉印工程也同樣在實施例9中也可使用。在實施例9中也可取得與實施例7或8同樣的效果。 The transfer process shown in Fig. 19 can also be used in the same manner as in the ninth embodiment. The same effects as those of the seventh or eighth embodiment can be obtained also in the ninth embodiment.

若根據以上說明的實施例7乃至9，則可提供一種在雷射轉印製程中不會有隨溫度上昇而元件發光特性劣化或異物混入造成黑點缺陷的發生之雷射轉印方法及轉印裝置。 According to the seventh to ninth embodiments described above, it is possible to provide a laser transfer method and a transfer which do not cause deterioration of the light-emitting characteristics of the element or the occurrence of black-spot defects due to temperature rise during the laser transfer process. Printing device.

又，若根據以上說明的實施例7乃至9，則可提供一種能夠將施體基板上的有機層予以高速且高安定地轉印至電路基板的雷射轉印方法及轉印裝置。 Further, according to the seventh to ninth embodiments described above, it is possible to provide a laser transfer method and a transfer device capable of transferring an organic layer on a donor substrate to a circuit board at high speed and high stability.

[實施例10] [Embodiment 10]

實施例10為顯示進行本發明雷射轉印方式的原理驗證實驗的結果。藉由真空蒸鍍法，在厚度10μm的SUS304施體基板的一主面上，以膜厚65nm來形成Alq₃(發光層及電子輸送層)作為轉印層。另一方面，在玻璃基板的一主面上，依序以膜厚150nm來形成ITO(陽極電極)，以膜厚125nm來形成α-NPD(電洞輸送層)，作為轉印Alq₃的側的電路基板。 Embodiment 10 is a result showing a principle verification experiment in which the laser transfer method of the present invention is carried out. Alq ₃ (light emitting layer and electron transporting layer) was formed as a transfer layer on one main surface of a SUS304 donor substrate having a thickness of 10 μm by a vacuum deposition method at a film thickness of 65 nm. On the other hand, on one main surface of the glass substrate, ITO (anode electrode) was formed in a film thickness of 150 nm, and α-NPD (hole transport layer) was formed at a film thickness of 125 nm as a side of transfer Alq ₃ Circuit board.

其次，隔著厚度80μm的間隔件，以Alq₃膜面與α- NPD膜面能夠對向的方式安裝施體基板與玻璃基板，保持於真空層內，且經由真空層的窗材來對SUS304施體基板的其他主面上(不形成Alq₃層的側)以0.8m/s的速度在一方向掃描照射脈衝YAG雷射(波長532nm，輸出6W，脈衝寬10ns，重複頻率20kHz)。雷射每1脈衝的輸出是300μJ，將SUS304板上的照射射束徑設定於190μm來照射，以1J/cm²的能量密度進行雷射照射。由雷射的重複頻率與掃描速度的關係，依序進行：點徑190mm的雷射脈衝每50μs，在一方向移動40μm而照射的工程。亦即，在SUS施體基板上的同一處，雷射脈衝會被重疊照射4次的條件。 Next, the donor substrate and the glass substrate were attached so that the Alq ₃ film surface and the α-NPD film surface were opposed to each other with a spacer having a thickness of 80 μm, and held in the vacuum layer, and the SUS304 was passed through the window of the vacuum layer. The other main surface of the donor substrate (the side where the Alq ₃ layer was not formed) was scanned with a pulsed YAG laser (wavelength 532 nm, output 6 W, pulse width 10 ns, repetition frequency 20 kHz) in a direction at a speed of 0.8 m/s. The output of the laser per pulse was 300 μJ, and the irradiation beam diameter on the SUS304 plate was set to 190 μm to irradiate, and laser irradiation was performed at an energy density of 1 J/cm ² . The relationship between the repetition frequency of the laser and the scanning speed is sequentially performed: a laser pulse having a spot diameter of 190 mm per 50 μs, and a project of moving 40 μm in one direction to illuminate. That is, on the same place on the SUS donor substrate, the laser pulse is superimposed and irradiated four times.

在這樣的照射條件下一列照射後，在與掃描方向正交的方向使射束點相對性地平行移動100μm，進行同樣的掃描照射。如此使重複射束平行移動，將基板全面掃描照射後，在轉印後的Alq₃膜上，依序蒸鍍LiF(電子注入層)0.5nm，Al(陰極電極)，將玻璃基板貼合於層疊膜形成基板而密封。 After the irradiation of the next row under such irradiation conditions, the beam spots were relatively moved in parallel by 100 μm in the direction orthogonal to the scanning direction, and the same scanning irradiation was performed. In this manner, the repeated beams were moved in parallel, and after the substrate was completely scanned and irradiated, LiF (electron injection layer) of 0.5 nm and Al (cathode electrode) were sequentially deposited on the transferred Alq ₃ film, and the glass substrate was bonded thereto. The laminated film is formed into a substrate and sealed.

以此方法形成的有機EL發光裝置是在進行轉印的全面確認發光。此時，在亮度100cd/m²的發光電壓是9V。考量SUS施體基板的光吸收及往板厚方向的熱傳導，估算雷射重疊照射所造成Alq₃層側的溫度上昇量時，溫度是70℃程度。這是遠比Alq₃昇華溫度低的溫度。 The organic EL light-emitting device formed by this method is a comprehensive confirmation light emission for performing transfer. At this time, the light-emitting voltage at a luminance of 100 cd/m ² was 9V. Considering the light absorption of the SUS donor substrate and the heat conduction in the thickness direction, the temperature rise is 70 ° C when the temperature rise of the Alq ₃ layer side caused by the overlapping laser irradiation is estimated. This is a temperature that is much lower than the Alq ₃ sublimation temperature.

由此可理解，本方式是藉由熱昇華以外的現象來將有機層轉印至裝置基板側。亦即，可想像成實施例7記載那 樣藉由雷射熱彈性波之機械性的剝離所產生的轉印。由於可將有機膜溫度壓至低溫，因此可實現一邊抑制有機膜的熱損傷，一邊安定作為具有原來的機能的膜之轉印工程。 From this, it can be understood that the present embodiment transfers the organic layer to the device substrate side by a phenomenon other than thermal sublimation. That is, it can be imagined as described in the seventh embodiment. A transfer resulting from mechanical peeling of a laser thermoelastic wave. Since the temperature of the organic film can be lowered to a low temperature, it is possible to achieve a transfer process of a film having the original function while suppressing thermal damage of the organic film.

依據該等的檢討證實，藉由脈衝重疊照射所引起之熱彈性波的傳播，Alq₃不會因熱而昇華(分解)，保持分子構造不變，機械性地被轉印。實現保持分子構造不變的狀態的轉印是意味可實現不損裝置性能且安定之有機層的轉印。 According to these reviews, it was confirmed that Alq _{3 was} not sublimated (decomposed) by heat due to the propagation of the thermoelastic waves caused by the pulse overlap irradiation, and the molecular structure was maintained and mechanically transferred. The transfer which realizes the state in which the molecular structure is maintained is a transfer which means that the stable organic layer can be realized without impairing the performance of the device.

(比較例) (Comparative example)

在實施例10中，除了將作為施體基板使用的SUS板設為厚度2μm，將雷射掃描速度設為3.2m/s以外，是與實施例2同樣設定，形成有機EL裝置。在3.2m/s的掃描時，由與雷射振盪頻率的關係，雷射脈衝間的移動是相當於160μm。亦即，在比較例2的照射是成為雷射脈衝不重疊於SUS304施體基板上的同一處(1脈衝照射)的條件。 In the tenth embodiment, the organic EL device was formed in the same manner as in the second embodiment except that the SUS plate used as the donor substrate was set to have a thickness of 2 μm and the laser scanning speed was set to 3.2 m/s. At a scan of 3.2 m/s, the movement between the laser pulses is equivalent to 160 μm in relation to the laser oscillation frequency. That is, the irradiation in Comparative Example 2 is a condition in which the laser pulse does not overlap the same place (1 pulse irradiation) on the SUS304 donor substrate.

在調查以這樣的雷射照射條件來形成的裝置的發光特性時，在點照射中央部是未被確認裝置發光。在估算SUS板厚條件為2μm的Alq₃層側的溫度上昇量時，溫度是270℃程度。此溫度是超過Alq₃昇華的溫度，可推定因雷射轉印工程中的膜中溫度上昇而產生材料的熱昇華．分解。 When investigating the light-emitting characteristics of the device formed under such laser irradiation conditions, the unconfirmed device emits light at the center portion of the spot irradiation. When the temperature rise amount of the SUS plate thickness condition of 2 μm on the side of the Alq ₃ layer was estimated, the temperature was about 270 °C. This temperature is higher than the temperature of Alq ₃ sublimation, and it can be presumed that the material is sublimed due to the temperature rise in the film in the laser transfer engineering. break down.

以上說明有關雷射轉印裝置及使用轉印裝置的雷射轉 印方法的實施例。 The above description relates to the laser transfer device and the laser transfer using the transfer device An embodiment of the printing method.

在此，說明有關包含前述雷射轉印工程之使用有機電致發光(EL)元件的顯示裝置的製造工程。圖22是表示製造工程的流程圖，圖23是表示完成後的有機EL元件的構造的剖面圖。如該等的圖所示般，在玻璃基板401上藉由CVD等的手段來薄薄地堆積具有作為屏障膜的機能之SiN膜402及SiO膜403，且在其上以CVD法來將構成電晶體的通道部分之非晶形矽膜或IGZO膜的通道膜405形成50nm程度的厚度，因應所需進行雷射退火等變換膜質的處理。在此記載有關屏障膜的層構成、膜厚及構成電晶體通道的薄膜的膜厚、膜質等是其一例，如此的記載不是限制本發明者。 Here, a manufacturing process of a display device using an organic electroluminescence (EL) element including the aforementioned laser transfer engineering will be described. Fig. 22 is a flow chart showing a manufacturing process, and Fig. 23 is a cross-sectional view showing the structure of the completed organic EL element. As shown in the above-mentioned figures, the SiN film 402 and the SiO film 403 having a function as a barrier film are thinly deposited on the glass substrate 401 by means of CVD or the like, and the SiO film is electrically formed thereon. The amorphous ruthenium film of the channel portion of the crystal or the channel film 405 of the IGZO film is formed to a thickness of about 50 nm, and the film quality treatment such as laser annealing is performed in accordance with the necessity. Here, the layer structure of the barrier film, the film thickness, the film thickness of the film constituting the transistor channel, the film quality, and the like are examples, and the description thereof is not intended to limit the inventors.

以能夠形成既定的電路之方式，將上述那樣形成的通道膜405蝕刻成島形狀，在形成閘極絕緣膜(未圖示)、閘極配線406之後，進行根據離子注入的雜質擴散、及雜質擴散區域的活化退火，依序形成源極、汲極配線407、層間絕緣膜408、鈍化膜409、透明電極410，藉此可形成將電晶體電路配置於畫素部的主動矩陣基板。 The channel film 405 formed as described above is etched into an island shape so that a gate insulating film (not shown) and a gate wiring 406 are formed, and impurity diffusion and impurity diffusion according to ion implantation are performed. In the activation annealing of the region, the source, the drain wiring 407, the interlayer insulating film 408, the passivation film 409, and the transparent electrode 410 are sequentially formed, whereby the active matrix substrate in which the transistor circuit is disposed in the pixel portion can be formed.

為了驅動有機EL元件所必要的每畫素的電晶體數是選擇2~5，只要使用組合電晶體之最適的電路構成即可。如此的電路是推薦以CMOS電路來形成的定電流驅動電路作為一例。有關如此的電路、電極形成的加工技術的詳細對於該當業者而言為周知。並且，在電晶體電路的製造工程的途中需要追加離子注入、活化退火等的工程也為 周知。 The number of transistors per pixel necessary for driving the organic EL element is selected from 2 to 5, as long as the optimum circuit configuration of the combined transistor is used. Such a circuit is an example of a constant current drive circuit which is preferably formed by a CMOS circuit. Details of the processing techniques for such circuits and electrode formation are well known to those skilled in the art. In addition, in the middle of the manufacturing process of the transistor circuit, it is necessary to add a process such as ion implantation or activation annealing. I know.

其次，在主動矩陣基板上的透明電極410的周邊部形成元件分離帶411。在如此的元件分離帶411是被要求絕緣性，可使用聚醯亞胺等的有機材料，或SiO₂、SiN等的無機材料。有關如此的元件分離帶411的成膜及圖案形成法也為該業者所周知。 Next, an element separation tape 411 is formed on the peripheral portion of the transparent electrode 410 on the active matrix substrate. In such an element separation tape 411, insulation is required, and an organic material such as polyimide or an inorganic material such as SiO ₂ or SiN can be used. Film formation and pattern formation methods for such element separation tape 411 are also well known to those skilled in the art.

如前述般，在透明電極410上依序形成有機EL材料的電洞輸送層412、發光層413、電子輸送層(未圖示)、陰極414。此時，如前述般，亦可以雷射轉印方式來一次轉印包含有機層的多層構造的膜。又，亦可利用雷射轉印及遮罩蒸鍍，在特定的透明電極410上分塗發光色不同的發光層413。藉此可形成更多色的顯示器的情形為周知。 As described above, the hole transport layer 412, the light-emitting layer 413, the electron transport layer (not shown), and the cathode 414 of the organic EL material are sequentially formed on the transparent electrode 410. At this time, as described above, the film of the multilayer structure including the organic layer may be primarily transferred by a laser transfer method. Further, the light-emitting layer 413 having a different luminescent color may be applied to the specific transparent electrode 410 by laser transfer and mask evaporation. The situation in which a more colored display can be formed thereby is well known.

只在畫素區域以網版印刷等的手段來塗佈充填材415，在該充填材415上層疊密封板416來完成密封。對於如此形成的有機EL顯示裝置進行點亮檢查。在點亮檢查中，產生黑點、白點等的缺陷時也對缺陷修正可能者進行修正。之後，因應所需經由儲存於框體的模組工程來完成有機EL顯示裝置。 The filler 415 is applied only by means of screen printing or the like in the pixel region, and the sealing plate 416 is laminated on the filler 415 to complete the sealing. The lighting inspection was performed on the organic EL display device thus formed. In the lighting inspection, when defects such as black spots and white spots are generated, the defect correction may be corrected. Thereafter, the organic EL display device is completed in accordance with the module work stored in the casing in response to the need.

本發明是不僅以雷射轉印及真空蒸鍍來形成上述說明的有機層之所謂低分子型的顯示器有效，連所謂被稱為高分子型的有機EL顯示器也有效。而且，本發明不僅在前述那樣的玻璃基板上依序層疊透明電極、有機層及陰極，而將EL發光取出至玻璃基板側之所謂底部發光型的有機 EL的製造有效，連在玻璃基板上依序層疊陰極、有機層及透明電極，而將EL發光取出至密封基板側之所謂頂部發光型的有機EL的製造也有效。 The present invention is effective as a so-called low-molecular-weight display that forms the organic layer described above by laser transfer and vacuum deposition, and is also effective as an organic EL display called a polymer type. Further, in the present invention, not only the transparent electrode, the organic layer, and the cathode are sequentially laminated on the glass substrate as described above, but the so-called bottom emission type organic body in which the EL light emission is taken out to the side of the glass substrate is obtained. The production of EL is effective, and it is also effective to produce a so-called top emission type organic EL in which a cathode, an organic layer, and a transparent electrode are sequentially laminated on a glass substrate, and EL light is taken out to the side of the sealing substrate.

20‧‧‧支撐基板 20‧‧‧Support substrate

21‧‧‧第1有機膜 21‧‧‧1st organic film

100‧‧‧有機EL基板 100‧‧‧Organic EL substrate

101‧‧‧驅動電路基板 101‧‧‧Drive circuit substrate

110‧‧‧有機EL元件部 110‧‧‧Organic EL Component Division

200‧‧‧成膜室(轉印室) 200‧‧‧ Film forming chamber (transfer chamber)

220‧‧‧施體基板 220‧‧‧body substrate

Claims (36)

一種雷射轉印方法，係將形成於金屬施體薄板上的薄膜予以轉印至與前述金屬施體薄板對向的基板之轉印方法，其特徵為：在一定的方向掃描複數的脈衝雷射光列，而照射至前述金屬施體薄板背面，在照射第1脈衝光的部分，以第2脈衝光的至少一部分能夠重疊的方式照射掃描第2脈衝光。 A laser transfer method is a method for transferring a film formed on a metal donor sheet to a substrate opposite to the metal donor sheet, characterized in that: scanning a plurality of pulsed rays in a certain direction The light beam array is irradiated onto the back surface of the metal donor thin plate, and the second pulse light is irradiated so that at least a part of the second pulse light can overlap while the first pulse light is irradiated. 如申請專利範圍第1項之雷射轉印方法，其中，在從被照射前述第1脈衝光到被照射前述第2脈衝光為止的時間，使用從被照射前述第1脈衝光的前述金屬施體薄板背面部分到熱擴散長區域為止的溫度比前述薄膜的蒸鍍溫度低之具有重複頻率的前述脈衝雷射光列。 The laser transfer method according to the first aspect of the invention, wherein the metal light irradiated with the first pulse light is used for a time from when the first pulse light is irradiated to when the second pulse light is irradiated The pulsed laser beam having a repetition frequency is lower than the vapor deposition temperature of the film from the back surface portion of the thin plate to the heat diffusion long region. 如申請專利範圍第1項之雷射轉印方法，其中，在從被照射前述第1脈衝光到被照射前述第2脈衝光為止的時間，使用從被照射前述第1脈衝光的前述金屬施體薄板背面部分到熱擴散長區域為止的溫度比前述薄膜的蒸鍍溫度更低之板厚的前述金屬施體薄板。 The laser transfer method according to the first aspect of the invention, wherein the metal light irradiated with the first pulse light is used for a time from when the first pulse light is irradiated to when the second pulse light is irradiated The metal donor sheet having a thickness lower than a vapor deposition temperature of the film from the back surface portion of the body sheet to the long heat diffusion region. 如申請專利範圍第1項之雷射轉印方法，其中，在從被照射前述第1脈衝光到被照射前述第2脈衝光為止的時間，使用從被照射前述第1脈衝光的前述金屬施體薄板背面部分到熱擴散長區域為止的溫度比前述薄膜的蒸鍍溫度更低之脈衝能量的前述第1脈衝光。 The laser transfer method according to the first aspect of the invention, wherein the metal light irradiated with the first pulse light is used for a time from when the first pulse light is irradiated to when the second pulse light is irradiated The first pulse light having a pulse energy lower than a vapor deposition temperature of the film from a back surface portion of the thin metal plate to a long heat diffusion region. 如申請專利範圍第1項之雷射轉印方法，其中， 在前述金屬施體薄板與前述基板之間具有間隙。 For example, the laser transfer method of claim 1 of the patent scope, wherein There is a gap between the metal donor sheet and the substrate. 如申請專利範圍第5項之雷射轉印方法，其中，將前述間隙設為10μm以上且100μm以下。 The laser transfer method of claim 5, wherein the gap is set to be 10 μm or more and 100 μm or less. 如申請專利範圍第1項之雷射轉印方法，其中，前述薄膜係從前述金屬施體薄板側依載體輸送層、活性層的順序層疊之層疊膜，或從前述金屬施體薄板側依活性層、載體輸送層的順序層疊之層疊膜。 The laser transfer method according to the first aspect of the invention, wherein the film is a laminated film which is laminated in the order of the carrier transfer layer and the active layer from the side of the metal donor sheet, or is active from the side of the metal donor sheet. A laminated film in which the layers and the carrier transport layer are sequentially laminated. 如申請專利範圍第1項之雷射轉印方法，其中，前述薄膜係從前述金屬施體薄板側依活性層、載體輸送層的順序層疊之層疊膜。 The laser beam transfer method according to the first aspect of the invention, wherein the film is a laminated film in which the active layer and the carrier transport layer are laminated in this order from the side of the metal donor sheet. 如申請專利範圍第1項之雷射轉印方法，其中，前述薄膜係從前述金屬施體薄板側依載體輸送層、活性層、載體輸送層的順序層疊之層疊膜。 The laser transfer method according to the first aspect of the invention, wherein the film is a laminated film which is laminated in this order from the side of the metal donor sheet to the carrier layer, the active layer and the carrier layer. 如申請專利範圍第1項之雷射轉印方法，其中，前述薄膜係從前述金屬施體薄板側依電極層、載體輸送層、活性層的順序層疊之層疊膜。 The laser beam transfer method according to the first aspect of the invention, wherein the film is a laminated film in which the electrode layer is laminated in the order of the electrode layer, the carrier layer, and the active layer. 如申請專利範圍第1項之雷射轉印方法，其中，前述薄膜係從前述金屬施體薄板側依複數的載體輸送層、活性層、複數的載體輸送層的順序層疊之層疊膜。 The laser transfer method according to the first aspect of the invention, wherein the film is a laminated film in which a plurality of carrier transport layers, an active layer, and a plurality of carrier transport layers are stacked in this order from the side of the metal donor sheet. 如申請專利範圍第1項之雷射轉印方法，其中，在前述基板上形成有電極，前述脈衝雷射列的掃描方向係成為前述電極的長度方向的掃描。 The laser transfer method of claim 1, wherein an electrode is formed on the substrate, and a scanning direction of the pulsed laser beam is a scan in a longitudinal direction of the electrode. 如申請專利範圍第12項之雷射轉印方法，其中，前述電極為畫像顯示裝置的畫素電極，前述畫素電極 係被分類成具有至少3種類以上的發光色之副畫素電極，前述脈衝雷射係被掃描於特定的發光色的前述副畫素電極的長度方向。 The laser transfer method of claim 12, wherein the electrode is a pixel electrode of the image display device, and the pixel electrode It is classified into a sub-pixel electrode having at least three types of luminescent colors, and the pulsed laser system is scanned in the longitudinal direction of the sub-pixel electrode of a specific luminescent color. 如申請專利範圍第13項之雷射轉印方法，其中，前述副畫素電極係馬賽克(mosaic)配列或三角形(delta)配列所配置，前述脈衝雷射係被掃描於特定的發光色的前述副畫素電極所鄰接的方向。 The laser transfer method of claim 13, wherein the sub-pixel element is arranged in a mosaic or a delta arrangement, and the pulsed laser is scanned in a specific luminescent color. The direction in which the sub-pixel electrodes are adjacent. 如申請專利範圍第1項之雷射轉印方法，其中，形成前述金屬施體薄板的板厚不同的區域，未被照射前述脈衝雷射光列的區域的金屬施體薄板的板厚係比被照射前述脈衝雷射光列的區域的金屬施體薄板的板厚厚。 The laser transfer method of claim 1, wherein the metal thin plate having a different thickness is formed in the region of the metal thin plate, and the thickness of the metal thin plate not irradiated to the region of the pulsed laser beam is The thickness of the metal donor sheet in the region where the pulsed laser beam is irradiated is thick. 如申請專利範圍第1項之雷射轉印方法，其中，前述金屬施體薄板係成為2層構造，被照射前述脈衝雷射光列的側的金屬薄板的熱擴散率係比形成有前述薄膜的側的金屬薄板的熱擴散率大。 The laser transfer method according to the first aspect of the invention, wherein the metal thin plate has a two-layer structure, and a thermal diffusion rate of the thin metal plate on the side of the pulsed laser beam is higher than that of the thin film. The side metal sheet has a large thermal diffusivity. 一種雷射轉印設備，其特徵係具有：轉印部，其係進行雷射轉印方法，在將形成於金屬施體薄板上的薄膜轉印至與前述金屬施體薄板對向的基板之轉印方法中，在一定的方向掃描複數的脈衝雷射光列，而照射至前述金屬施體薄板背面，在照射第1脈衝光的部分，以第2脈衝光的至少一部分能夠重疊的方式照射掃描第2脈衝光；及薄膜形成部，其係於前述金屬施體薄板形成有機膜作 為前述薄膜。 A laser transfer device characterized by: a transfer portion that performs a laser transfer method, and transfers a film formed on a metal donor sheet to a substrate opposite to the metal donor sheet In the transfer method, a plurality of pulsed laser light beams are scanned in a predetermined direction, and are irradiated onto the back surface of the metal donor thin plate, and a portion irradiated with the first pulsed light is irradiated so that at least a part of the second pulsed light can overlap. a second pulsed light; and a thin film forming portion formed on the metal donor sheet to form an organic film It is the aforementioned film. 如申請專利範圍第17項之雷射轉印設備，其中，在前述基板具有至少3種類以上的發光色的副畫素電極，作為彩色畫像顯示用，在第1發光色的副畫素電極進行前述雷射轉印，在第2發光色的副畫素電極進行前述雷射轉印，在第3發光色的副畫素電極進行前述雷射轉印。 The laser transfer device according to claim 17, wherein the sub-pixel electrode having at least three types of luminescent colors on the substrate is used as a color image display for the sub-pixel electrode of the first illuminating color. In the above-described laser transfer, the above-described laser transfer is performed on the sub-pixel electrode of the second luminescent color, and the laser transfer is performed on the sub-pixel electrode of the third luminescent color. 如申請專利範圍第17項之雷射轉印設備，其中，在前述基板具有至少3種類以上的發光色的副畫素電極，作為彩色畫像顯示用，在第1發光色的副畫素電極進行前述雷射轉印，在第2發光色的副畫素電極進行前述雷射轉印。 The laser transfer device according to claim 17, wherein the sub-pixel electrode having at least three types of luminescent colors on the substrate is used as a color image display for the sub-pixel electrode of the first illuminating color. In the above-described laser transfer, the above-described laser transfer is performed on the sub-pixel electrode of the second luminescent color. 如申請專利範圍第17項之雷射轉印設備，其中，利用前述金屬施體薄板來對第1基板進行前述雷射轉印，調整第2基板及前述金屬施體薄板的位置，而利用前述薄膜附著的金屬薄板區域來進行前述雷射轉印，調整第3基板及前述金屬施體薄板的位置，而利用前述薄膜附著的區域來進行前述雷射轉印。 The laser transfer device of claim 17, wherein the first substrate is subjected to the laser transfer by the metal thin plate, and the positions of the second substrate and the metal thin plate are adjusted. The laser thin film region to which the film adheres is subjected to the above-described laser transfer, and the positions of the third substrate and the metal donor thin plate are adjusted, and the laser transfer is performed by the region where the film adheres. 如申請專利範圍第20項之雷射轉印設備，其中，在前述第1基板、前述第2基板及前述第3基板的背面設置對準攝影機，利用該對準攝影機來調整前述基板及雷射頭，調整前述金屬施體薄板及前述雷射頭的位置來進行雷射轉印。 The laser beam transfer device of claim 20, wherein an alignment camera is provided on a back surface of the first substrate, the second substrate, and the third substrate, and the substrate and the laser are adjusted by the alignment camera. The head adjusts the position of the metal donor sheet and the aforementioned laser head to perform laser transfer. 一種有機EL面板製造裝置，其特徵係具備：平台，其係搭載：在一主面形成有機層的施體基板、 及與前述一主面隔著一定的間隔來對向的電路基板；雷射振盪器，其係振盪雷射光；雷射光整形手段，其係將前述雷射光變換成矩形形狀的均一強度分布；雷射光分配手段，其係取得將前述均一強度分布的雷射光予以直列且等間隔地配光的2個以上的雷射光；投影透鏡，其係將前述2個以上的雷射光予以縮小投影於前述施體基板的其他主面上；移動手段，其係使前述直列且等間隔地配光的前述雷射光與前述平台在前述直列方向相對地等速移動；及控制手段，其係隨著前述等速移動，使往前述施體基板的其他主面上的同一處重疊照射。 An organic EL panel manufacturing apparatus characterized by comprising: a platform on which a donor substrate having an organic layer formed on a main surface, And a circuit board facing the first main surface at a predetermined interval; the laser oscillator is an oscillating laser beam; and the laser light shaping means is a uniform intensity distribution for converting the laser light into a rectangular shape; a light distribution means for obtaining two or more types of laser light in which the laser light of the uniform intensity distribution is arranged in line and equally spaced; and a projection lens for reducing and projecting the two or more types of laser light The other main surface of the bulk substrate; and the moving means for moving the laser light that is aligned in the line at equal intervals and the platform to move at a constant speed in the direction of the in-line direction; and the control means is along with the aforementioned constant velocity The movement is performed to superimpose the same portion on the other main surface of the donor substrate. 如申請專利範圍第22項之有機EL面板製造裝置，其中，前述雷射光分配手段係具有：將前述均一強度分布的雷射光予以直列且等間隔地分歧成複數的雷射光的機能之雷射光分歧手段。 The organic EL panel manufacturing apparatus according to claim 22, wherein the laser light distribution means has a laser light divergence in which the laser light of the uniform intensity distribution is arranged in a line and is divided into a plurality of laser beams at equal intervals. means. 如申請專利範圍第23項之有機EL面板製造裝置，其中，前述雷射光整形手段及前述雷射光分配手段係將具有複數的前述均一的強度分布的雷射光予以前述直列且等間隔地產生之繞射光學元件。 The apparatus for manufacturing an organic EL panel according to claim 23, wherein the laser light shaping means and the laser light distribution means are configured to wind laser light having a plurality of uniform intensity distributions in an in-line and equally spaced manner. Optical components. 如申請專利範圍第23項之有機EL面板製造裝置，其中，前述雷射光整形手段係於結像面上形成具有均一強度分布的雷射光之繞射光學元件，前述雷射光分歧手段係位於前述結像面上設置，具備前述直列且等間隔的開 口圖案之遮罩。 The apparatus for manufacturing an organic EL panel according to claim 23, wherein the laser light shaping means is a diffraction optical element that forms a laser beam having a uniform intensity distribution on a junction image surface, and the laser light divergence means is located at the junction. Set on the surface, with the above-mentioned inline and equally spaced opening The mask of the mouth pattern. 如申請專利範圍第25項之有機EL面板製造裝置，其中，在前述遮罩與前述投影透鏡之間設置用以將前述前述分歧數2個以上的雷射光變換成平行光的中繼透鏡。 The organic EL panel manufacturing apparatus according to claim 25, wherein a relay lens for converting two or more of the plurality of laser beams into parallel light is provided between the mask and the projection lens. 如申請專利範圍第22項之有機EL面板製造裝置，其中，前述雷射光分配手段係具備直列或矩陣狀且等間隔地設置的複數個前述雷射振盪器。 The organic EL panel manufacturing apparatus according to claim 22, wherein the laser light distribution means includes a plurality of the laser oscillators arranged in an in-line or matrix shape and arranged at equal intervals. 如申請專利範圍第22~27項中的任一項所記載之有機EL面板製造裝置，其中，具備光擋板，其係具有：藉由波卡爾器及偏光射束***器的組合，在任意的時間，以任意的時間間隔來切出來自前述前述雷射振盪器的雷射光之機能。 The organic EL panel manufacturing apparatus according to any one of claims 22 to 27, further comprising: a light baffle having a combination of a waver and a polarizing beam splitter At the time, the function of the laser light from the aforementioned laser oscillator is cut out at arbitrary time intervals. 如申請專利範圍第22~27項中的任一項所記載之有機EL面板製造裝置，其中，前述雷射光係全固體脈衝雷射光，或藉由前述光擋板來時間變調的連續振盪固體雷射光。 The apparatus for manufacturing an organic EL panel according to any one of claims 22 to 27, wherein the laser light is all solid-solid pulsed laser light or a continuously oscillating solid ray that is time-shifted by the light baffle. Shoot light. 如申請專利範圍第22~27項中的任何一項所記載之有機EL面板製造裝置，其中，前述施體基板係由Ti、Ni、Cu、Fe、Au、Cr、Mo、W或含該等的合金之任一所構成的金屬板。 The organic EL panel manufacturing apparatus according to any one of claims 22 to 27, wherein the donor substrate is made of Ti, Ni, Cu, Fe, Au, Cr, Mo, W or the like. A metal plate composed of any of the alloys. 一種有機EL面板製造方法，係於電路基板上形成由導電性薄膜所構成的第一電極，在前述第一電極上形成至少含發光層的有機EL層，形成被形成於前述有機EL 層上的第二電極之有機EL面板的製造方法，其特徵為：對於在一主面層疊有機EL膜的施體基板，使形成下部電極的前述電路基板與前述施體基板保持一定的間隔和前述一主面對向，將所被振盪的振盪雷射光予以變換成具備矩形形狀的均一強度分布之複數的矩形雷射光，將複數的前述矩形雷射光予以直列且等間隔地配置，在前述施體基板的其他主面的既定的區域隔一定時間以上既定次數重疊照射，使前述有機EL膜從前述施體基板剝離，轉印至前述對向的前述電路基板上。 An organic EL panel manufacturing method is characterized in that a first electrode made of a conductive thin film is formed on a circuit board, and an organic EL layer containing at least a light-emitting layer is formed on the first electrode, and is formed on the organic EL. A method for producing an organic EL panel of a second electrode on a layer, wherein the substrate substrate on which the organic EL film is laminated on one main surface is provided with a predetermined interval between the circuit substrate on which the lower electrode is formed and the donor substrate The oscillating laser light that has been oscillated is converted into a plurality of rectangular laser beams having a rectangular uniform intensity distribution, and the plurality of rectangular laser lights are arranged in parallel and at equal intervals. The predetermined area of the other main surface of the bulk substrate is irradiated with a predetermined number of times or more, and the organic EL film is peeled off from the donor substrate and transferred onto the opposite circuit board. 如申請專利範圍第31項之有機EL面板製造方法，其中，將前述振盪雷射光或前述矩形雷射光予以分歧或切出。 The method of manufacturing an organic EL panel according to claim 31, wherein the oscillating laser light or the rectangular laser light is diverged or cut out. 如申請專利範圍第31項之有機EL面板製造方法，其中，前述一定時間係將脈衝雷射或前述振盪雷射光或前述矩形雷射光予以時間變調下取得。 The method of manufacturing an organic EL panel according to claim 31, wherein the predetermined period of time is obtained by temporally adjusting a pulsed laser or the oscillating laser light or the rectangular laser light. 如申請專利範圍第31項之有機EL面板製造方法，其中，使前述矩形雷射光與前述電路基板及前述施體基板相對地移動。 The method of manufacturing an organic EL panel according to claim 31, wherein the rectangular laser light is moved relative to the circuit board and the donor substrate. 如申請專利範圍第34項之有機EL面板製造方法，其中，以前述等間隔單位或前述既定次數單位來使離散地移動。 The method for producing an organic EL panel according to claim 34, wherein the method of manufacturing the discrete EL is discretely moved by the equal interval unit or the predetermined number of times. 如申請專利範圍第31~35項中的任何一項所記 載之有機EL面板製造方法，其中，根據來自1台的雷射振盪器或直列或矩陣狀且等間隔地配置的複數個雷射振盪器之前述振盪雷射光來形成前述複數的矩形雷射光。 As noted in any of the patent applications in items 31 to 35 In the method of manufacturing an organic EL panel, the plurality of rectangular laser light beams are formed by the oscillating laser light from a plurality of laser oscillators or a plurality of laser oscillators arranged in an in-line or matrix manner at equal intervals.