TW201421577A - Plasma treatment device - Google Patents

Plasma treatment device Download PDF

Info

Publication number
TW201421577A
TW201421577A TW102136389A TW102136389A TW201421577A TW 201421577 A TW201421577 A TW 201421577A TW 102136389 A TW102136389 A TW 102136389A TW 102136389 A TW102136389 A TW 102136389A TW 201421577 A TW201421577 A TW 201421577A
Authority
TW
Taiwan
Prior art keywords
processing apparatus
plasma processing
power supply
conductor
filter unit
Prior art date
Application number
TW102136389A
Other languages
Chinese (zh)
Other versions
TWI621172B (en
Inventor
Naohiko Okunishi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201421577A publication Critical patent/TW201421577A/en
Application granted granted Critical
Publication of TWI621172B publication Critical patent/TWI621172B/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

This invention provides a plasma treatment device that reduces, to the greatest extent, influence on electron density distribution of a mounting stand or in-plane uniformity in a process characteristic, when setting up a filter unit on a heater power supply line electrically connected between a heating element inside of a mounting stand disposed in a treatment container and a heater power source disposed outside of the treatment container. In the plasma treatment device, a heating element 50, disposed inside a susceptor 12, is electrically connected to a heater switch 58 (IN) outside a chamber 10, through an inner conductor 51 going through the susceptor 12, a power supply conductor 52 longitudinally traversing a space SP, a filter unit 54 and an electric cable 56. The casing 110 of the filter unit 54 is fitted vertically, from the bottom of the chamber 10, into an opening 114 which is formed on the base 10a of the chamber 10 adjacent to a cylindrical conductor cover 42 surrounding around a power supply bar 40, so that the ceasing 110 is connected to the chamber base 10a physically and electrically.

Description

電漿處理裝置 Plasma processing device

本發明係關於使用高頻波對被處理基板施行電漿處理之電漿處理裝置，特別是關於一種電漿處理裝置，包含濾波器，以將經由設在於處理容器內載置被處理基板之載置台之高頻電極及發熱體進入加熱器供電線之高頻雜訊加以隔斷。 The present invention relates to a plasma processing apparatus for performing plasma treatment on a substrate to be processed using high-frequency waves, and more particularly to a plasma processing apparatus including a filter for passing a mounting table disposed on a substrate to be processed in a processing container. The high-frequency electrode and the heating element enter the high-frequency noise of the heater power supply line to be cut off.

使用電漿以製造半導體元件或是FPD(Flat Panel Display，平面顯示器)之微細加工中，被處理基板(半導體晶圓、玻璃基板等)上電漿密度分布之控制，及基板溫度或溫度分布之控制皆非常重要。若不適當控制基板溫度，即無法確保基板表面反應乃至於處理特性之均一性，半導體元件或是顯示元件之製造良率會降低。 The use of plasma to fabricate semiconductor components or fine-film processing of FPD (Flat Panel Display), control of plasma density distribution on substrates (semiconductor wafers, glass substrates, etc.), and substrate temperature or temperature distribution Control is very important. If the substrate temperature is not properly controlled, the substrate surface reaction and the uniformity of the processing characteristics cannot be ensured, and the manufacturing yield of the semiconductor element or the display element is lowered.

一般而言，於電漿處理裝置，特別是電容耦合型電漿處理裝置腔室內載置被處理基板之載置台或基座具有下列功能：對電漿空間施加高頻之高頻電極功能、以靜電吸附等固持基板之固持部功能、與以傳熱方式控制基板為既定溫度之溫度控制部功能。關於溫度控制功能，業界期望可適當修正來自電漿或腔室壁之輻射熱之不均一性造成的對基板之入熱特性之分布，或基板支持構造造成的熱分布。 In general, a stage or a susceptor on which a substrate to be processed is placed in a plasma processing apparatus, particularly a capacitively coupled plasma processing apparatus, has the following functions: a high frequency high frequency electrode function is applied to the plasma space, The function of the holding portion of the holding substrate such as electrostatic adsorption, and the function of the temperature control unit that controls the substrate to a predetermined temperature by the heat transfer method. Regarding the temperature control function, it is desirable in the industry to appropriately correct the distribution of the thermal characteristics of the substrate caused by the non-uniformity of the radiant heat from the plasma or the chamber wall, or the heat distribution caused by the substrate supporting structure.

自以往，為控制基座溫度乃至於基板溫度，多半使用組裝因通電發熱 之發熱體於基座而控制該發熱體產生之焦耳熱之加熱器方式。然而，若採用加熱器方式，自該高頻電源對基座高頻電極施加之高頻波的一部分會易於經由發熱體進入加熱器供電線。高頻雜訊若通過加熱器供電線而到達加熱器電源，即有損害加熱器電源之動作或性能之虞。且高頻電流若在加熱器供電線上流動，即會無謂地消耗高頻功率。因如此之情事，通常會將用來使自基座內建之發熱體進入之高頻雜訊衰減或加以阻擋之濾波器設在加熱器供電線上。 Since the past, in order to control the temperature of the susceptor and even the temperature of the substrate, most of the assembly is used for heating. The heating element is controlled by the susceptor to control the Joule heat generated by the heating element. However, if the heater method is employed, a part of the high-frequency wave applied from the high-frequency power source to the susceptor high-frequency electrode easily enters the heater power supply line via the heat generating body. If the high-frequency noise reaches the heater power supply through the heater power supply line, it will damage the operation or performance of the heater power supply. If the high-frequency current flows on the heater supply line, the high-frequency power is unnecessarily consumed. Because of this, a filter for attenuating or blocking high-frequency noise entering the heating element built into the pedestal is usually provided on the heater power supply line.

本案申請人於專利文獻1揭示一電漿處理裝置，於此種濾波器之初段設置具有非常大的電感之空心線圈，將此空心線圈收納在設置於基座附近(通常為下方)之導電性機殼內。此電漿處理裝置中，對基座內部之高頻電極施加單一高頻波，特別是13.56MHz以下的高頻波時，使用空心線圈之上述構成濾波器有效作用，可在加熱器供電線上使30A以上大的加熱器電流流動，同時高效率地，穩定確實地隔斷13.56MHz以下的高頻雜訊。 The applicant of the present application disclosed a plasma processing apparatus in Patent Document 1, and an air-core coil having a very large inductance is disposed in the initial stage of the filter, and the air-core coil is housed in conductivity (nearly below) disposed near the susceptor. Inside the case. In the plasma processing apparatus, when a single high-frequency wave is applied to the high-frequency electrode inside the susceptor, in particular, a high-frequency wave of 13.56 MHz or less, the above-described constituent filter using the air-core coil is effective, and can be made larger than 30 A on the heater power supply line. The heater current flows while efficiently and stably blocking high frequency noise below 13.56 MHz.

且本案申請人於專利文獻2揭示一技術，改善將自於電漿處理裝置處理容器內之基座進入加熱器供電線上的高頻率的高頻雜訊加以隔斷之濾波器性能。此濾波器技術藉由利用分布常數線路之規則性多重並聯共振特性，不要說是在對基座內部之高頻電極施加低頻率的高頻波時，即使是在施加高頻率(例如27MHz以上)高頻波時，亦可以1個空心線圈作為收納於濾波器機殼之線圈。 Moreover, the applicant of the present application disclosed a technique in Patent Document 2 to improve the filter performance of blocking high-frequency high-frequency noise from the susceptor in the processing chamber of the plasma processing apparatus into the heater power supply line. This filter technique utilizes the regular multiple parallel resonance characteristics of the distributed constant line, not to mention when a low frequency high frequency wave is applied to the high frequency electrode inside the pedestal, even when a high frequency (for example, 27 MHz or more) high frequency wave is applied. Alternatively, one air-core coil may be used as the coil housed in the filter case.

【先前技術文獻】 [Previous Technical Literature] 【專利文獻】 [Patent Literature]

【專利文獻1】日本特開2008-198902 [Patent Document 1] Japan Special Open 2008-198902

【專利文獻2】日本特開2011-135052 [Patent Document 2] Japanese Special Open 2011-135052

然而，具有用來將經由基座內部之高頻電極及發熱體進入加熱器供電線之高頻雜訊加以隔斷之濾波器之習知之電漿處理裝置中，於基座正下方濾波器之配置位置或加熱器供電線之迴繞會對基座上之電子密度分布或處理特性之面內均一性造成不良之影響，且亦會對濾波器之頻率-阻抗特性造成不良影響而使其成為一課題。 However, in a conventional plasma processing apparatus having a filter for blocking high-frequency noise passing through the high-frequency electrode inside the susceptor and the heating element into the heater power supply line, the filter is disposed directly below the susceptor. The rewinding of the position or heater supply line can adversely affect the in-plane uniformity of the electron density distribution or processing characteristics on the pedestal, and also adversely affect the frequency-impedance characteristics of the filter, making it a problem .

為解決如此之習知技術之課題，本發明提供一種電漿處理裝置，在將配置於處理容器內之載置台內部之發熱體與配置於處理容器外之加熱器電源加以電性連接之加熱器供電線上設置濾波器單元時，極力減少對載置台上之電子密度分布或處理特性之面內均一性造成的影響，且於濾波器單元獲得穩定之頻率-阻抗特性。 In order to solve the problem of the prior art, the present invention provides a plasma processing apparatus in which a heating element disposed inside a mounting table in a processing container and a heater power source disposed outside the processing container are electrically connected When the filter unit is provided on the power supply line, the influence on the in-plane uniformity of the electron density distribution or processing characteristics on the mounting table is minimized, and a stable frequency-impedance characteristic is obtained in the filter unit.

本發明之電漿處理裝置包含：處理容器，進行電漿處理；載置台，於該處理容器內隔著空間配置在板狀之導電性基部之上，載置並固持被處理基板；高頻電極，設於該載置台；高頻供電部，用來對該高頻電極施加一定頻率的高頻波；發熱體，設於該載置台；加熱器供電線，用來使該發熱體電性連接配置於該處理容器外之加熱器電源；及濾波器單元，包含：線圈，用來使經由該發熱體進入該加熱器供電線之高頻雜訊衰減，或加以阻擋；及機殼，收納該線圈；且配置該濾波器單元，使該機殼上端於該載置台正下方與該基部之上表面高度相同，或低於該基部之上表面，於該基部，形成以非接觸之方式使該加熱器供電線通過之開口，該加熱器供電線包含自位於該基部之該開口內側或下方之該線圈第1 端子至該載置台的下表面通過該空間延伸之銷狀或棒狀的第1導體。 A plasma processing apparatus according to the present invention includes: a processing container that performs plasma processing; and a mounting table in which a space is placed on a plate-shaped conductive base via a space, and a substrate to be processed is placed and held; and a high frequency electrode The high-frequency power supply unit is configured to apply a high-frequency wave of a certain frequency to the high-frequency electrode; the heating element is disposed on the mounting table; and the heater power supply line is configured to electrically connect the heating element to the mounting unit. a heater power supply outside the processing container; and a filter unit comprising: a coil for attenuating or blocking high frequency noise entering the heater power supply line via the heating element; and a casing for housing the coil; And configuring the filter unit such that the upper end of the casing is at the same height as the upper surface of the base directly below the mounting table, or lower than the upper surface of the base, and the heater is formed in a non-contact manner at the base An opening through which the power supply line passes, the heater power supply line including the coil 1 from inside or below the opening of the base A pin-shaped or rod-shaped first conductor through which the terminal extends to the lower surface of the mounting table.

上述裝置構成中，呈不將濾波器單元置入載置台正下方空間內之配置構成。又，濾波器單元之機殼上端於載置台正下方與基部之上表面高度相同，或低於基部之上表面，而安裝於基部開口，藉此由機殼收納之線圈配置於低於接地電位基部之上表面之位置，故因基部自高頻電極電磁性地被遮蔽，不投影於電漿產生空間，不成為使電漿密度分布紊亂之特異點。 In the above-described device configuration, the filter unit is placed in a space directly under the mounting table. Further, the upper end of the casing of the filter unit is at the same height as the upper surface of the base directly below the mounting table, or is lower than the upper surface of the base, and is attached to the base opening, whereby the coil housed by the casing is disposed below the ground potential Since the base portion is placed on the upper surface of the base portion, the base portion is electromagnetically shielded from the high-frequency electrode, and is not projected into the plasma generation space, and does not become a singular point that disturbs the plasma density distribution.

依本發明之電漿處理裝置，藉由如上述之構成及作用，可在將配置於處理容器內之載置台內部之發熱體與配置於處理容器外之加熱器電源加以電性連接之加熱器供電線上設置濾波器單元時，極力減少對載置台上之電子密度分布或處理特性之面內均一性造成的影響，且於濾波器單元獲得穩定之頻率-阻抗特性。 According to the plasma processing apparatus of the present invention, the heating element disposed inside the mounting table in the processing container and the heater power supply disposed outside the processing container can be electrically connected by the above-described configuration and operation. When the filter unit is provided on the power supply line, the influence on the in-plane uniformity of the electron density distribution or processing characteristics on the mounting table is minimized, and a stable frequency-impedance characteristic is obtained in the filter unit.

cw‧‧‧冷卻水 Cw‧‧‧cooling water

G‧‧‧間隙 G‧‧‧ gap

g‧‧‧圓孔(開口) G‧‧‧round hole (opening)

h1A‧‧‧第1端子 h 1A ‧‧‧1st terminal

h2A‧‧‧第2端子 h 2A ‧‧‧2nd terminal

n(1)、n(2)‧‧‧連接點 n(1), n(2)‧‧‧ connection points

SP‧‧‧空間 SP‧‧‧ Space

T(1)、T(2)‧‧‧濾波器端子 T(1), T(2)‧‧‧ filter terminals

W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer

10‧‧‧腔室(處理容器) 10‧‧‧ chamber (processing container)

10a‧‧‧底壁(基部) 10a‧‧‧ bottom wall (base)

10b‧‧‧底壁(開口部) 10b‧‧‧ bottom wall (opening)

10d‧‧‧側壁 10d‧‧‧ side wall

12‧‧‧基座 12‧‧‧ Pedestal

14、16‧‧‧筒狀支持部 14, 16‧‧‧ cylindrical support

18‧‧‧排氣路 18‧‧‧Exhaust road

20‧‧‧排氣口 20‧‧‧Exhaust port

22‧‧‧排氣管 22‧‧‧Exhaust pipe

24‧‧‧排氣裝置 24‧‧‧Exhaust device

26‧‧‧閘閥 26‧‧‧ gate valve

28‧‧‧背板 28‧‧‧ Backplane

30‧‧‧高頻電極 30‧‧‧High frequency electrode

32‧‧‧靜電吸盤 32‧‧‧Electrostatic suction cup

32a‧‧‧介電質層 32a‧‧‧ dielectric layer

32b‧‧‧DC電極 32b‧‧‧DC electrode

34、36‧‧‧高頻電源 34, 36‧‧‧ High frequency power supply

38‧‧‧匹配單元 38‧‧‧Matching unit

40‧‧‧供電棒 40‧‧‧Power rod

42‧‧‧導體外殼 42‧‧‧Conductor shell

44‧‧‧聚焦環 44‧‧‧ Focus ring

45‧‧‧直流電源 45‧‧‧DC power supply

46‧‧‧開關 46‧‧‧ switch

47‧‧‧電阻 47‧‧‧resistance

48‧‧‧DC高壓線 48‧‧‧DC high voltage line

50‧‧‧發熱體 50‧‧‧heating body

50(IN)‧‧‧內側發熱線 50 (IN) ‧ ‧ inner heating line

50(OUT)‧‧‧外側發熱線 50 (OUT) ‧‧‧ outside heating line

50(MI)‧‧‧中間發熱線 50 (MI) ‧ ‧ middle heating line

50(MIin)‧‧‧靠內中間發熱線 50(MI in )‧‧‧Inside middle heating line

50(MIout)‧‧‧靠外中間發熱線 50 (MI out ) ‧ ‧ outside the middle heating line

51(IN)、51(OUT)、51(IN1)、51(IN2)‧‧‧內部導體 51 (IN), 51 (OUT), 51 (IN1), 51 (IN2) ‧ ‧ internal conductor

52(IN)、52(OUT)、52(IN1)、52(IN2)、52(OUT1)、52(OUT2)‧‧‧供電導體 52 (IN), 52 (OUT), 52 (IN1), 52 (IN2), 52 (OUT1), 52 (OUT2) ‧ ‧ power supply conductor

54(IN)、54(MI)、54(MIin)、54(MIout)、54(OUT)‧‧‧濾波器單元 54 (IN), 54 (MI), 54 (MI in ), 54 (MI out ), 54 (OUT) ‧ ‧ filter unit

56(IN)、56(OUT)‧‧‧電纜線(成對纜線) 56 (IN), 56 (OUT) ‧‧‧ cable (paired cable)

58(IN)、58(OUT)‧‧‧加熱器電源 58 (IN), 58 (OUT) ‧ ‧ heater power supply

60‧‧‧冷媒通路 60‧‧‧Refrigerant access

62‧‧‧冷媒供給管 62‧‧‧Refrigerant supply pipe

64‧‧‧噴淋頭(上部電極) 64‧‧‧sprinkler head (upper electrode)

66‧‧‧電極板 66‧‧‧Electrode plate

68‧‧‧電極支持體 68‧‧‧electrode support

70‧‧‧氣體室 70‧‧‧ gas chamber

70a‧‧‧氣體導入口 70a‧‧‧ gas inlet

72‧‧‧氣體噴吐孔 72‧‧‧ gas spout

74‧‧‧處理氣體供給部 74‧‧‧Processing Gas Supply Department

75‧‧‧控制部 75‧‧‧Control Department

76‧‧‧氣體供給管 76‧‧‧ gas supply pipe

100(1)、100(2)‧‧‧加熱器供電線 100 (1), 100 (2) ‧ ‧ heater power supply line

102(1)、102(2)‧‧‧濾波器 102(1), 102(2)‧‧‧ filter

104(1)、104(2)‧‧‧線圈 104(1), 104(2)‧‧‧ coil

106(1)、106(2)‧‧‧電容器 106(1), 106(2)‧‧‧ capacitors

105‧‧‧分布常數線路 105‧‧‧Distributed constant line

110‧‧‧導電性機殼 110‧‧‧Electrically conductive case

110a‧‧‧通氣孔(衝孔金屬) 110a‧‧‧Ventilation holes (punching metal)

112‧‧‧導電性電容器盒 112‧‧‧Electrical capacitor box

116‧‧‧下部電連接器 116‧‧‧The lower electrical connector

118‧‧‧棒軸(捲筒) 118‧‧‧ rod shaft (reel)

122(1)、122(2)‧‧‧連接導體 122(1), 122(2)‧‧‧ Connecting conductor

120‧‧‧管 120‧‧‧ tube

124‧‧‧上部電連接器 124‧‧‧Upper electrical connector

126‧‧‧絕緣體支持棒 126‧‧‧Insulator support rod

128、158‧‧‧插座端子 128, 158‧‧‧ socket terminal

132、132a、132b、132c‧‧‧通路 132, 132a, 132b, 132c‧‧‧ pathway

134‧‧‧絕緣體 134‧‧‧Insulator

136‧‧‧外殼 136‧‧‧Shell

140‧‧‧電容器(電阻) 140‧‧‧ capacitor (resistance)

144‧‧‧電感器 144‧‧‧Inductors

146‧‧‧電容器(雜散電容) 146‧‧‧ capacitor (stray capacitance)

150‧‧‧LC串聯電路 150‧‧‧LC series circuit

152‧‧‧背板 152‧‧‧ Backplane

153、154(IN)、154(OUT)‧‧‧貫通孔 153, 154 (IN), 154 (OUT) ‧ ‧ through holes

156‧‧‧插座端子 156‧‧‧Socket terminal

158‧‧‧溝槽 158‧‧‧ trench

160‧‧‧垂直通路 160‧‧‧Vertical path

162‧‧‧可動基部 162‧‧‧ movable base

164‧‧‧伸縮囊 164‧‧‧ telescopic bladder

166‧‧‧檔板 166‧‧‧ baffle

168‧‧‧上部腳部 168‧‧‧ upper foot

170‧‧‧環狀板 170‧‧‧ring plate

172‧‧‧下部腳部 172‧‧‧ Lower foot

174‧‧‧連結部 174‧‧‧Connecting Department

174a‧‧‧板部 174a‧‧‧ Board

174b‧‧‧柱狀部 174b‧‧‧ Column

176‧‧‧螺軸 176‧‧‧ screw shaft

178‧‧‧馬達 178‧‧‧ motor

180‧‧‧螺帽 180‧‧‧ nuts

181‧‧‧絕緣薄片 181‧‧‧Insulation sheet

182‧‧‧環狀絕緣體 182‧‧‧Circular insulator

184‧‧‧上部匹配單元 184‧‧‧Upper matching unit

186‧‧‧上部供電棒 186‧‧‧Upper power supply rod

200‧‧‧凸緣 200‧‧‧Flange

202‧‧‧沉頭孔 202‧‧‧ countersunk hole

204‧‧‧開口 204‧‧‧ openings

206‧‧‧間隔物 206‧‧‧ spacers

208‧‧‧凸緣部 208‧‧‧Flange

210‧‧‧殼體 210‧‧‧Shell

圖1係顯示依本發明一實施形態之電漿處理裝置之構成之剖面圖。 Fig. 1 is a cross-sectional view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention.

圖2係顯示設於上述電漿處理裝置之基座之發熱體之構成之略俯視圖。 Fig. 2 is a schematic plan view showing the configuration of a heating element provided on the base of the plasma processing apparatus.

圖3係顯示用來對上述基座內之發熱體供給電力之加熱器供電部之電路構成圖。 Fig. 3 is a circuit configuration diagram showing a heater power supply unit for supplying electric power to a heating element in the susceptor.

圖4係顯示依實施形態之濾波器單元之物理性構造及配置構成之剖面圖。 Fig. 4 is a cross-sectional view showing the physical structure and arrangement of the filter unit according to the embodiment.

圖5係顯示上述濾波器單元中裝設於共通之棒軸之2系統之空心線圈之線圈卷線之外觀構成之立體圖。 Fig. 5 is a perspective view showing the appearance of a coil winding of an air-core coil of two systems mounted in a common rod shaft in the above filter unit.

圖6係顯示上述濾波器單元之上端部之構成之俯視圖。 Fig. 6 is a plan view showing the configuration of the upper end portion of the above filter unit.

圖7係顯示於基座12之內部及正下方加熱器供電線之迴繞佈局之縱剖面圖。 Figure 7 is a longitudinal cross-sectional view showing the wraparound layout of the heater supply line inside and below the susceptor 12.

圖8係顯示於基座之內部及正下方加熱器供電線之迴繞佈局之略俯視圖。 Figure 8 is a top plan view showing the wraparound layout of the heater supply line inside and below the pedestal.

圖9係顯示於基座之內部加熱器供電線之迴繞之一變形例之縱剖面圖。 Figure 9 is a longitudinal cross-sectional view showing a modification of the winding of the internal heater supply line of the susceptor.

圖10A係顯示就依實施形態之濾波器單元之配置及供電導體之迴繞不希望之一例圖。 Fig. 10A is a view showing an example of the arrangement of the filter unit according to the embodiment and the unwinding of the power supply conductor.

圖10B係顯示就依實施形態之濾波器單元之配置及供電導體之迴繞不希望之另一例圖。 Fig. 10B is a view showing another example of the arrangement of the filter unit according to the embodiment and the unwinding of the power supply conductor.

圖11係顯示實施形態中高頻雜訊通過加熱器供電線朝接地流動之高頻傳播路之等價電路圖。 Fig. 11 is an equivalent circuit diagram showing a high-frequency propagation path in which high-frequency noise is transmitted to the ground through the heater power supply line in the embodiment.

圖12係顯示上述等價電路中濾波器之頻率-阻抗特性圖。 Figure 12 is a graph showing the frequency-impedance characteristics of the filter in the above equivalent circuit.

圖13係顯示上述等價電路中LC串聯電路之頻率-阻抗特性圖。 Figure 13 is a graph showing the frequency-impedance characteristics of the LC series circuit in the above equivalent circuit.

圖14係顯示上述電漿處理裝置中於基座使用絕緣體之背板之構成例之剖面圖。 Fig. 14 is a cross-sectional view showing a configuration example of a backing plate in which an insulator is used in a susceptor in the plasma processing apparatus.

圖15係顯示圖14之裝置之重要部位之構成之部分剖面圖。 Figure 15 is a partial cross-sectional view showing the configuration of an important portion of the apparatus of Figure 14.

圖16A係顯示實施形態中發熱體為3分割式時之濾波器單元之配置及加熱器供電線之迴繞之一例之略俯視圖。 Fig. 16A is a schematic plan view showing an example of the arrangement of the filter unit and the winding of the heater power supply line in the case where the heating element is a three-part type in the embodiment.

圖16B係顯示發熱體為3分割式時之濾波器單元之配置及加熱器給電線之迴繞之另一例之略俯視圖。 Fig. 16B is a schematic plan view showing another example of the arrangement of the filter unit when the heating element is a three-divided type and the winding of the heater to the electric wire.

圖17A係顯示發熱體為4分割式時之濾波器單元之配置及加熱器給電線之迴繞之一例之略俯視圖。 Fig. 17A is a schematic plan view showing an arrangement of a filter unit when the heating element is a four-divided type and a winding of the heater wire.

圖17B係顯示發熱體為4分割式時之濾波器單元之配置及加熱器給電線之迴繞之另一例之略俯視圖。 Fig. 17B is a schematic plan view showing another example of the arrangement of the filter unit when the heating element is divided into four and the winding of the heater.

圖17C係顯示發熱體為4分割式時之濾波器單元之配置及加熱器給電線之迴繞之又一例之略俯視圖。 Fig. 17C is a schematic plan view showing still another example of the arrangement of the filter unit when the heating element is divided into four and the winding of the heater.

圖18係顯示於上述電漿處理裝置基座可沿上下方向移動時之構成例之縱剖面圖。 Fig. 18 is a longitudinal cross-sectional view showing a configuration example in which the susceptor of the plasma processing apparatus is movable in the vertical direction.

圖19A係顯示微波電漿處理裝置中濾波器單元安裝構造之一例之剖面圖。 Fig. 19A is a cross-sectional view showing an example of a filter unit mounting structure in a microwave plasma processing apparatus.

圖19B係顯示微波電漿處理裝置中濾波器單元安裝構造之另一例之剖面圖。 Fig. 19B is a cross-sectional view showing another example of the filter unit mounting structure in the microwave plasma processing apparatus.

圖19C係顯示微波電漿處理裝置中濾波器單元安裝構造之一例之剖面圖。 Fig. 19C is a cross-sectional view showing an example of a filter unit mounting structure in the microwave plasma processing apparatus.

圖19D係顯示微波電漿處理裝置中濾波器單元安裝構造之另一例之剖面圖。 Fig. 19D is a cross-sectional view showing another example of the filter unit mounting structure in the microwave plasma processing apparatus.

圖19E係顯示微波電漿處理裝置中濾波器單元安裝構造之另一例之剖面圖。 Fig. 19E is a cross-sectional view showing another example of the filter unit mounting structure in the microwave plasma processing apparatus.

圖20A係顯示用於供驗證微波漏洩之電磁場模擬之實施例之濾波器單元安裝構造之剖面圖。 Fig. 20A is a cross-sectional view showing a filter unit mounting structure of an embodiment for electromagnetic field simulation for verifying microwave leakage.

圖20B係顯示用於供驗證微波漏洩之電磁場模擬之比較例之濾波器單元安裝構造之剖面圖。 Fig. 20B is a cross-sectional view showing a filter unit mounting structure of a comparative example for electromagnetic field simulation for verifying microwave leakage.

圖21A係顯示依實施例之電磁場模擬之結果圖。 Fig. 21A is a graph showing the results of electromagnetic field simulation according to the embodiment.

圖21B係顯示依比較例之電磁場模擬之結果圖。 Fig. 21B is a graph showing the results of electromagnetic field simulation according to a comparative example.

圖22A係顯示圖20A之濾波器單元安裝構造中於殼體與機殼之間設置口徑13mm之圓孔時之電磁場模擬之結果圖。 Fig. 22A is a view showing the results of electromagnetic field simulation when a circular hole having a diameter of 13 mm is provided between the casing and the casing in the filter unit mounting structure of Fig. 20A.

圖22B係顯示圖20A之濾波器單元安裝構造中設有口徑17mm之圓孔時之電磁場模擬之結果圖。 Fig. 22B is a view showing the result of electromagnetic field simulation when a circular hole having a diameter of 17 mm is provided in the filter unit mounting structure of Fig. 20A.

圖22C係顯示圖20A之濾波器單元安裝構造中設有口徑23mm之圓孔時之電磁場模擬之結果圖。 Fig. 22C is a view showing the result of electromagnetic field simulation when a circular hole having a diameter of 23 mm is provided in the filter unit mounting structure of Fig. 20A.

圖22D係顯示圖20A之濾波器單元安裝構造中設有口徑27mm之圓孔時之電磁場模擬之結果圖。 Fig. 22D is a view showing the result of electromagnetic field simulation when a circular hole having a diameter of 27 mm is provided in the filter unit mounting structure of Fig. 20A.

圖22E係顯示圖20A之濾波器單元安裝構造中設有口徑35mm之圓孔時之電磁場模擬之結果圖。 Fig. 22E is a view showing the results of electromagnetic field simulation when a circular hole having a diameter of 35 mm is provided in the filter unit mounting structure of Fig. 20A.

以下，參照附圖說明本發明之較佳實施形態。 Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

〔電漿處理裝置整體之構成〕 [Construction of the whole plasma processing apparatus]

圖1顯示依本發明一實施形態之電漿處理裝置之構成。此電漿處理裝置作為下部雙頻施加方式之電容耦合型電漿處理裝置構成，具有例如鋁或不鏽鋼等金屬製圓筒型腔室(處理容器)10。腔室10接地。 Fig. 1 shows the configuration of a plasma processing apparatus according to an embodiment of the present invention. This plasma processing apparatus is configured as a capacitive coupling type plasma processing apparatus of a lower dual frequency application method, and has a metal cylindrical chamber (processing container) 10 such as aluminum or stainless steel. The chamber 10 is grounded.

於腔室10中，水平配置有載置作為被處理基板例如半導體晶圓W之圓板形載置台或基座12。此基座12由自腔室10底朝垂直上方延伸之介電質，例如陶瓷製之筒狀支持部14以非接地方式支持。於腔室10底壁(於此實施形態中為基部)10a、基座12下表面、與介電質筒狀支持部14內壁之間，形成通往大氣空間之空間SP。基座12下表面係無凹凸之水平平坦面，腔室10底壁10a之上表面除後述開口(10b、114)外亦係無凹凸之水平平坦面。 In the chamber 10, a disk-shaped mounting table or a susceptor 12 on which a substrate to be processed, for example, a semiconductor wafer W, is placed horizontally is disposed. The susceptor 12 is made of a dielectric extending vertically from the bottom of the chamber 10, for example, a cylindrical support portion 14 made of ceramic, in an ungrounded manner. A space SP to the atmospheric space is formed between the bottom wall of the chamber 10 (the base portion in this embodiment) 10a, the lower surface of the susceptor 12, and the inner wall of the dielectric cylindrical support portion 14. The lower surface of the susceptor 12 is a horizontal flat surface having no irregularities, and the upper surface of the bottom wall 10a of the chamber 10 is a horizontal flat surface having no irregularities in addition to the openings (10b, 114) to be described later.

在沿介電質筒狀支持部14外周自腔室10之底壁10b朝垂直上方延伸之導電性筒狀支持部16與腔室10內壁之間形成環狀排氣路18，於此排氣路18底設有排氣口20。此排氣口20經由排氣管22連接排氣裝置24。排氣裝置24具有渦輪分子泵等真空泵，可使腔室10內之處理空間減壓至所希望之真空度。於腔室10之側壁安裝有使半導體晶圓W之送入送出口開合之閘閥26。 An annular exhaust passage 18 is formed between the conductive cylindrical support portion 16 extending vertically upward from the bottom wall 10b of the chamber 10 along the outer periphery of the dielectric cylindrical support portion 14 and the inner wall of the chamber 10, in this row An exhaust port 20 is provided at the bottom of the air passage 18. This exhaust port 20 is connected to the exhaust device 24 via an exhaust pipe 22. The exhaust unit 24 has a vacuum pump such as a turbo molecular pump to depressurize the processing space in the chamber 10 to a desired degree of vacuum. A gate valve 26 for opening and closing the feeding and discharging port of the semiconductor wafer W is attached to the side wall of the chamber 10.

基座12中，自下而上依此順序堆疊導體例如鋁所構成之背板28、導體例如鋁所構成之下部高頻電極30、與晶圓吸附用靜電吸盤32。下部高頻電極30經由匹配單元38、供電棒40及背板28電性連接第1及第2高頻電源34、36。 In the susceptor 12, a back plate 28 made of a conductor such as aluminum, a lower portion high-frequency electrode 30 composed of a conductor such as aluminum, and an electrostatic chuck 32 for wafer adsorption are stacked in this order from bottom to top. The lower high-frequency electrode 30 is electrically connected to the first and second high-frequency power sources 34 and 36 via the matching unit 38, the power supply rod 40, and the backing plate 28.

第1高頻電源34主要輸出對產生電漿有所貢獻之一定頻率(通常在27MHz以上，宜在60MHz以上)之第1高頻波HF。另一方面，第2高頻電源36主要輸出對朝基座12上的半導體晶圓W導入離子有所貢獻之一定頻率(通常在13MHz以下)之第2高頻波LF。匹配單元38中，收納有用來在第1及第2高頻電源34、36與電漿負載之間整合阻抗之第1及第2匹配器(未經圖示)。 The first high-frequency power source 34 mainly outputs a first high-frequency wave HF having a constant frequency (usually 27 MHz or more, preferably 60 MHz or more) contributing to the generation of plasma. On the other hand, the second high-frequency power source 36 mainly outputs the second high-frequency wave LF having a constant frequency (usually 13 MHz or less) contributing to the introduction of ions into the semiconductor wafer W on the susceptor 12. The matching unit 38 houses first and second matching devices (not shown) for integrating impedance between the first and second high-frequency power sources 34 and 36 and the plasma load.

供電棒40由具有既定外徑之圓筒形或圓柱形導體構成，其上端連接基座12(背板28)下表面之中心部，其下端連接匹配單元38內上述第1及第2匹配器之高頻輸出端子。且於腔室10之底壁10a與匹配單元38之間設有包圍供電棒40周圍之圓筒形導體外殼42。更詳細而言，於腔室10之底壁10a形成具有較供電棒40外徑大一圈的既定口徑之圓形開口部10b，導體外殼42上端 部連接此腔室開口部10b，且導體外殼42下端部連接上述匹配器之接地(回線)端子。 The power supply rod 40 is composed of a cylindrical or cylindrical conductor having a predetermined outer diameter, the upper end of which is connected to the central portion of the lower surface of the base 12 (back plate 28), and the lower end of which is connected to the first and second matching units in the matching unit 38. High frequency output terminal. A cylindrical conductor housing 42 surrounding the periphery of the power supply rod 40 is disposed between the bottom wall 10a of the chamber 10 and the mating unit 38. More specifically, a circular opening portion 10b having a predetermined diameter larger than the outer diameter of the power supply rod 40 is formed in the bottom wall 10a of the chamber 10, and the upper end of the conductor housing 42 is formed. The chamber opening portion 10b is connected, and the lower end portion of the conductor housing 42 is connected to the ground (loop) terminal of the matching device.

基座12具有較半導體晶圓W大一圈的直徑或口徑。基座12之上表面經分隔為與晶圓W形狀大致相同(圓形)且尺寸大致相同之中心區域亦即晶圓載置部，與朝此晶圓載置部外側延伸之環狀周邊部。載置處理對象之半導體晶圓W在晶圓載置部上。在環狀周邊部上安裝有具有較半導體晶圓W之口徑大的內徑之環狀板材所謂聚焦環44。此聚焦環44對應半導體晶圓W之被蝕刻材，以例如Si、SiC、C、SiO2中任一材質構成。 The susceptor 12 has a diameter or a diameter larger than that of the semiconductor wafer W. The upper surface of the susceptor 12 is partitioned into a central portion which is substantially the same (circular) shape as the wafer W and has substantially the same size, that is, a wafer mounting portion and an annular peripheral portion extending outward of the wafer mounting portion. The semiconductor wafer W on which the processing target is placed is on the wafer mounting portion. An annular plate member having a larger inner diameter than the semiconductor wafer W is attached to the annular peripheral portion, and a focus ring 44 is attached. The focus ring 44 corresponds to an material to be etched of the semiconductor wafer W, and is made of, for example, any of Si, SiC, C, and SiO2.

在設於基座12上表面之靜電吸盤32內，將DC電極32b封入於一體形成或一體固著於高頻電極30上表面之介電質層32a中。DC電極32b經由開關46、高電阻值之電阻47及DC高壓線48電性連接配置於腔室10外之外接直流電源45。若對DC電極32b施加來自直流電源45之高壓直流電壓，即可以靜電將半導體晶圓W吸附固持在靜電吸盤32上。又，DC高壓線48係被覆線，通過圓筒體之下部供電棒40中，自下貫通基座12之背板28及下部高頻電極30，連接靜電吸盤32之DC電極32b。 In the electrostatic chuck 32 provided on the upper surface of the susceptor 12, the DC electrode 32b is sealed in a dielectric layer 32a integrally formed or integrally fixed to the upper surface of the high-frequency electrode 30. The DC electrode 32b is electrically connected to the external power supply 45 outside the chamber 10 via the switch 46, the high resistance value resistor 47, and the DC high voltage line 48. When the high voltage DC voltage from the DC power source 45 is applied to the DC electrode 32b, the semiconductor wafer W can be electrostatically adsorbed and held on the electrostatic chuck 32. Further, the DC high voltage line 48 is a covered wire, and the DC electrode 32b of the electrostatic chuck 32 is connected to the backing plate 28 and the lower high frequency electrode 30 of the susceptor 12 through the lower power supply rod 40 of the cylindrical body.

發熱體50與DC電極32b一齊亦封入靜電吸盤32之介電質層32a中。此發熱體50由例如螺旋狀電阻發熱線構成，於此實施形態中，如圖2所示，沿基座12之徑方向2分割為內側發熱線50(IN)與外側發熱線50(OUT)。 The heating element 50 is also enclosed in the dielectric layer 32a of the electrostatic chuck 32 together with the DC electrode 32b. The heating element 50 is composed of, for example, a spiral resistance heating wire. In this embodiment, as shown in FIG. 2, the heating element 50 is divided into the inner heating wire 50 (IN) and the outer heating wire 50 (OUT) along the radial direction 2 of the susceptor 12. .

其中，內側發熱線50(IN)經由通過基座12中之內部導體51(IN)、縱斷空間SP之供電導體52(IN)、濾波器單元54(IN)及電纜線56(IN)，電性連接配置於腔室10外之專用加熱器電源58(IN)。外側發熱線50(OUT)經由通過基座12中之內部導體51(OUT)、縱斷空間SP之供電導體52(OUT)、濾波器單元54(OUT)及電纜線56(OUT)，亦電性連接配置於腔室10外之專用加熱器電源58(OUT)。 The inner heating wire 50 (IN) passes through the inner conductor 51 (IN) in the susceptor 12, the power supply conductor 52 (IN) of the vertical space SP, the filter unit 54 (IN), and the cable line 56 (IN). The dedicated heater power source 58 (IN) disposed outside the chamber 10 is electrically connected. The outer heating wire 50 (OUT) passes through the inner conductor 51 (OUT) in the susceptor 12, the power supply conductor 52 (OUT) of the vertical space SP, the filter unit 54 (OUT), and the cable 56 (OUT). The dedicated heater power supply 58 (OUT) disposed outside the chamber 10 is connected.

濾波器單元54(IN)、54(OUT)之配置構成，及在濾波器單元54(IN)、 54(OUT)與發熱體50之間迴繞加熱器供電線之構成係依本實施形態之主要特徵部分，於後詳細說明。 Configuration of filter units 54 (IN), 54 (OUT), and in filter unit 54 (IN), The configuration of the rewinding heater power supply line between 54 (OUT) and the heating element 50 is mainly described in the present embodiment, and will be described in detail later.

基座12中，於下部高頻電極30內部設有沿例如圓周向延伸之環狀冷媒通路60。於此冷媒通路60，自急冷器單元(未經圖示)經由冷媒供給管62循環供給既定溫度冷媒例如冷卻水cw。可朝藉由冷媒溫度使基座12溫度下降之方向控制之。又，為使基座12熱性結合半導體晶圓W，經由氣體供給管62對靜電吸盤32與半導體晶圓W之接觸界面供給來自傳熱氣體供給部(未經圖示)之傳熱氣體例如氦氣。 In the susceptor 12, an annular refrigerant passage 60 extending in the circumferential direction is provided inside the lower high-frequency electrode 30. In the refrigerant passage 60, a predetermined temperature refrigerant such as cooling water cw is circulated and supplied from the chiller unit (not shown) via the refrigerant supply pipe 62. It can be controlled in the direction in which the temperature of the susceptor 12 is lowered by the temperature of the refrigerant. Further, in order to thermally bond the susceptor 12 to the semiconductor wafer W, a heat transfer gas such as cesium from a heat transfer gas supply unit (not shown) is supplied to the contact interface between the electrostatic chuck 32 and the semiconductor wafer W via the gas supply tube 62. gas.

於腔室10之頂棚設有與基座12平行相向，兼為上部電極之噴淋頭64。此噴淋頭64包含與基座12相向之電極板66，及以可自其背後(上)裝卸之方式支持此電極板66之電極支持體68，於電極支持體68內部設有氣體室70，將自此氣體室70朝基座12側貫通之多數氣體噴吐孔72形成於電極支持體68及電極板66。電極板66與基座12之間之空間係電漿產生空間或處理空間。設於氣體室70上部之氣體導入口70a連接來自處理氣體供給部74之氣體供給管76。電極板66由例如Si、SiC或是C構成，電極支持體68由經例如氧化鋁膜處理之鋁所構成。 A shower head 64 which is parallel to the susceptor 12 and which is also an upper electrode is provided in the ceiling of the chamber 10. The shower head 64 includes an electrode plate 66 facing the susceptor 12, and an electrode support body 68 supporting the electrode plate 66 in a manner capable of being detached from the back (upper). The gas chamber 70 is disposed inside the electrode support body 68. A plurality of gas ejection holes 72 penetrating from the gas chamber 70 toward the susceptor 12 side are formed on the electrode holder 68 and the electrode plate 66. The space between the electrode plate 66 and the susceptor 12 is a plasma generating space or processing space. The gas introduction port 70a provided in the upper portion of the gas chamber 70 is connected to the gas supply pipe 76 from the processing gas supply unit 74. The electrode plate 66 is made of, for example, Si, SiC or C, and the electrode support 68 is made of aluminum treated with, for example, an aluminum oxide film.

此電漿處理裝置內各部，例如排氣裝置24、高頻電源34、36、直流電源45之開關46、加熱器電源58(IN)、58(OUT)、急冷器單元(未經圖示)、傳熱氣體供給部(未經圖示)及處理氣體供給部74等各個動作及裝置整體動作(程序)由包含微電腦之控制部75控制。 Each part of the plasma processing apparatus, such as the exhaust unit 24, the high frequency power source 34, 36, the switch 46 of the DC power source 45, the heater power source 58 (IN), 58 (OUT), and the chiller unit (not shown) The respective operations of the heat transfer gas supply unit (not shown) and the processing gas supply unit 74 and the overall operation (program) of the device are controlled by the control unit 75 including the microcomputer.

此電漿處理裝置中，為進行例如蝕刻，首先使閘閥26為開狀態，將加工對象之半導體晶圓W送入腔室10內，載置在靜電吸盤32上。又，自處理氣體供給部74將蝕刻氣體(單氣體或混合氣體)以既定流量導入腔室10內，藉由排氣裝置24使腔室10內壓力為設定值。且使第1及第2高頻電源34、36導通，分別以既定功率輸出第1高頻波HF及第2高頻波LF，經由匹配單元38及供電棒40對基座12之下部高頻電極30施加此等高頻波HF、LF。且自傳熱 氣體供給部對靜電吸盤32與半導體晶圓W之間之接觸界面供給傳熱氣體(氦氣)，並使靜電吸盤用開關46導通，以靜電吸附力將傳熱氣體關在上述接觸界面。另一方面，使加熱器電源58(IN)、58(OUT)導通，以分別獨立之焦耳熱使內側發熱體50(IN)及外側發熱體50(OUT)發熱，控制基座12上表面溫度或溫度分布於設定值。於基座12與噴淋頭64之間之電漿產生空間藉由高頻放電使由噴淋頭64噴吐之蝕刻氣體電漿化，藉由因此電漿產生之自由基或離子蝕刻半導體晶圓W表面之被加工膜為所希望之圖案。 In the plasma processing apparatus, for example, etching is performed, first, the gate valve 26 is opened, and the semiconductor wafer W to be processed is sent into the chamber 10 and placed on the electrostatic chuck 32. Further, the processing gas supply unit 74 introduces an etching gas (single gas or mixed gas) into the chamber 10 at a predetermined flow rate, and the pressure in the chamber 10 is set to a value by the exhaust unit 24. The first and second high-frequency power sources 34 and 36 are turned on, and the first high-frequency wave HF and the second high-frequency wave LF are output at a predetermined power, and the high-frequency electrode 30 is applied to the lower portion of the susceptor 12 via the matching unit 38 and the power supply rod 40. High frequency waves such as HF and LF. Self-heat transfer The gas supply unit supplies a heat transfer gas (helium gas) to the contact interface between the electrostatic chuck 32 and the semiconductor wafer W, and turns on the electrostatic chuck switch 46 to close the heat transfer gas to the contact interface by electrostatic adsorption. On the other hand, the heater power sources 58 (IN) and 58 (OUT) are turned on to heat the inner heating element 50 (IN) and the outer heating element 50 (OUT) by independent Joule heat, and the upper surface temperature of the susceptor 12 is controlled. Or the temperature is distributed at the set value. The plasma generating space between the susceptor 12 and the shower head 64 plasmas the etching gas ejected by the shower head 64 by high-frequency discharge, thereby etching the semiconductor wafer by radical or ion generated by the plasma. The film to be processed on the W surface is the desired pattern.

此電容耦合型電漿處理裝置藉由對基座12內部之下部高頻電極30施加適於電漿產生之相對較高之頻率(宜在60MHz以上)之第1高頻波HF，使電漿在理想之解離狀態下高密度化，即使在更低壓之條件下亦可形成高密度電漿。與此同時，藉由對下部高頻電極30施加適於離子導入之相對較低之頻率(13MHz以下)之第2高頻波LF，可對基座12上之半導體晶圓W施行選擇性高之各向異性蝕刻。 The capacitive coupling type plasma processing apparatus makes the plasma ideal by applying a first high frequency wave HF suitable for plasma generation at a relatively high frequency (preferably above 60 MHz) to the upper high frequency electrode 30 inside the susceptor 12. In the dissociated state, the density is increased, and a high-density plasma can be formed even under a lower pressure condition. At the same time, by applying a second high-frequency wave LF suitable for ion introduction at a relatively low frequency (13 MHz or less) to the lower high-frequency electrode 30, the semiconductor wafer W on the susceptor 12 can be selectively selected. Etching to the opposite sex.

且此電容耦合型電漿處理裝置中，對基座12同時進行急冷器之冷卻與加熱器之加熱，且於半徑方向之中心部與邊緣部獨立控制加熱器之加熱，故可高速進行溫度切換或昇降溫，且亦可任意或多樣地控制溫度分布之分布。 In the capacitive coupling type plasma processing apparatus, the susceptor 12 simultaneously performs cooling of the chiller and heating of the heater, and independently controls heating of the heater at the center portion and the edge portion in the radial direction, so that temperature switching can be performed at high speed. Alternatively, the temperature may be raised and lowered, and the distribution of the temperature distribution may be controlled arbitrarily or in various ways.

〔濾波器單元內之電路構成〕 [Circuit configuration in the filter unit]

其次，說明此電漿處理裝置中濾波器單元54(IN)、54(OUT)內之電路構成。 Next, the circuit configuration in the filter units 54 (IN) and 54 (OUT) in the plasma processing apparatus will be described.

圖3顯示用來對內建於基座12之晶圓溫度控制用發熱體50供給電力之加熱器供電部之電路構成。於此實施形態中，發熱體50之內側發熱線50(IN)及外側發熱線50(OUT)分別連接實質上具有同一電路構成之個別加熱器供電部，獨立控制內側發熱線50(IN)及外側發熱線50(OUT)之發熱量或發熱溫度。以下說明中，描述關於相對於內側發熱線50(IN)之加熱器供電部之構成及作用。相對於外側發熱線50(OUT)之加熱器供電部之構成及作用亦完全相 同。 FIG. 3 shows a circuit configuration of a heater power supply unit for supplying electric power to the wafer temperature control heating element 50 built in the susceptor 12. In this embodiment, the inner heating wire 50 (IN) and the outer heating wire 50 (OUT) of the heating element 50 are respectively connected to individual heater power supply portions having substantially the same circuit configuration, and the inner heating wires 50 (IN) are independently controlled. The heat generation or heating temperature of the outer heating wire 50 (OUT). In the following description, the configuration and operation of the heater power supply portion with respect to the inner heating wire 50 (IN) will be described. The structure and function of the heater power supply unit with respect to the outer heating wire 50 (OUT) are also completely with.

加熱器電源58(IN)係使用例如SSR進行例如商用頻率開關(ON/OFF)動作之交流輸出型電源，與內側發熱線50(IN)以封閉迴圈之電路連接。更詳細而言，加熱器電源58(IN)之一對輸出端子中，第1輸出端子經由第1加熱器供電線100(1)電性連接內側發熱線50(IN)之第1端子h1A，第2輸出端子經由第2加熱器供電線100(2)電性連接內側發熱線50(IN)之第2端子h2A。 The heater power supply 58 (IN) is an AC output type power supply that performs, for example, a commercial frequency switch (ON/OFF) operation using an SSR, and is connected to the inner heating wire 50 (IN) by a circuit that closes the loop. More specifically, among the output terminals of the heater power source 58 (IN), the first output terminal is electrically connected to the first terminal h 1A of the inner heating wire 50 (IN) via the first heater power supply line 100 ( 1 ). The second output terminal is electrically connected to the second terminal h 2A of the inner heating wire 50 (IN) via the second heater power supply line 100 ( 2 ).

濾波器單元54(IN)包含分別設於第1及第2加熱器供電線100(1)、100(2)途中之第1及第2濾波器102(1)、102(2)。兩濾波器102(1)、102(2)之電路構成實質上相同。 The filter unit 54 (IN) includes first and second filters 102 (1) and 102 (2) provided in the middle of the first and second heater power supply lines 100 (1) and 100 (2), respectively. The circuit configurations of the two filters 102(1), 102(2) are substantially the same.

更詳細而言，兩濾波器102(1)、102(2)分別包含單一線圈104(1)、104(2)。線圈104(1)、104(2)之上部端子(第1端子)或濾波器端子T(1)、T(2)經由一對供電導體52(IN1)、52(IN2)及一對內部導體51(IN1)、51(IN2)分別連接內側發熱線50(IN)之兩端子h1A、h2A。線圈104(1)、104(2)之下部端子(第2端子)經由電容器106(1)、106(2)連接接地電位之導電性構件(例如腔室10)，且經由連接點n(1)、n(2)及電纜線(成對纜線)56(IN)分別連接加熱器電源58(IN)之第1及第2輸出端子。 In more detail, the two filters 102(1), 102(2) respectively include a single coil 104(1), 104(2). The upper terminals (first terminals) of the coils 104 (1) and 104 (2) or the filter terminals T (1) and T (2) pass through a pair of power supply conductors 52 (IN1), 52 (IN2) and a pair of internal conductors. 51 (IN1) and 51 (IN2) are respectively connected to the two terminals h 1A and h 2A of the inner heating wire 50 (IN). The lower terminals (second terminals) of the coils 104 (1) and 104 (2) are connected to a conductive member (for example, the chamber 10) having a ground potential via capacitors 106 (1) and 106 (2), and via a connection point n (1) ), n(2) and cable (paired cable) 56 (IN) are connected to the first and second output terminals of the heater power supply 58 (IN), respectively.

該構成之加熱器供電部中，由加熱器電源58(IN)輸出之電流於正極性循環中，通過第1加熱器供電線100(1)亦即電纜線56(IN)、線圈104(1)、供電導體52(IN1)及內部導體51(IN1)自一方發熱線端子h1A進入內側發熱線50(IN)，於內側發熱線50(IN)各部產生通電造成的焦耳熱，自另一方發熱線端子h2A出來後，通過第2加熱器供電線100(2)亦即內部導體51(IN2)、供電導體52(IN2)、線圈104(2)及電纜線56(IN)回歸。於負極性循環中，電流於相同電路朝與上述相反方向流動。此加熱器交流輸出電流為商用頻率，故線圈104(1)、104(2)之阻抗或其電壓降下小到可忽視，且通過電容器106(1)、106(2)而接地之漏洩電流亦少到可忽視。 In the heater power supply unit having the configuration, the current output from the heater power supply 58 (IN) is in the positive polarity cycle, and passes through the first heater power supply line 100 (1), that is, the cable 56 (IN) and the coil 104 (1). The power supply conductor 52 (IN1) and the inner conductor 51 (IN1) enter the inner heating wire 50 (IN) from one of the heating wire terminals h 1A , and generate Joule heat due to energization in each of the inner heating wires 50 (IN), from the other side. After the heating wire terminal h 2A comes out, the second heater power supply line 100 (2), that is, the inner conductor 51 (IN2), the power supply conductor 52 (IN2), the coil 104 (2), and the cable 56 (IN) are returned. In the negative polarity cycle, current flows in the opposite direction to the same circuit. The heater AC output current is a commercial frequency, so the impedance of the coils 104(1), 104(2) or its voltage drop is negligibly small, and the leakage current grounded by the capacitors 106(1), 106(2) is also Less can be ignored.

〔濾波器單元之物理性構造及配置構成〕 [Physical structure and configuration of filter unit]

圖4~圖6顯示依本實施形態之濾波器單元54(IN)之物理性構造及配置構成。濾波器單元54(IN)如圖4所示，於例如鋁所構成之圓筒形導電性機殼110中同軸收納第1濾波器102(1)之線圈104(1)與第2濾波器102(2)之線圈104(2)，於濾波器端子T(1)、T(2)之相反側結合機殼110下端之導電性電容器盒112中一齊收納第1濾波器102(1)側之電容器106(1)與第2濾波器102(2)側之電容器106(2)(圖3)。 4 to 6 show the physical structure and arrangement of the filter unit 54 (IN) according to the present embodiment. As shown in FIG. 4, the filter unit 54 (IN) coaxially houses the coil 104 (1) and the second filter 102 of the first filter 102 (1) in a cylindrical conductive casing 110 made of, for example, aluminum. (2) The coil 104 (2) is accommodated in the conductive capacitor case 112 at the lower end of the casing 110 on the opposite side of the filter terminals T (1) and T (2), and accommodates the first filter 102 (1) side. Capacitor 106 (1) and capacitor 106 (2) on the second filter 102 (2) side (Fig. 3).

機殼110鄰接包圍供電棒40周圍之圓筒形導體外殼42(圖1)，自腔室10外側垂直嵌入形成於腔室10底壁(基部)10a之開口114，物理性地且電性地結合腔室底壁10a。在此，機殼110安裝於腔室底壁10a之開口114，俾濾波器端子T(1)、T(2)之上表面不高於腔室底壁10a之上表面(最好是於相同高度為同一面)。此時，機殼110之上端亦宜不高於腔室底壁10a之上表面。 The casing 110 is adjacent to the cylindrical conductor casing 42 (FIG. 1) surrounding the power supply rod 40, and is vertically embedded in the opening 114 formed in the bottom wall (base) 10a of the chamber 10 from the outside of the chamber 10, physically and electrically. The chamber bottom wall 10a is joined. Here, the casing 110 is mounted to the opening 114 of the bottom wall 10a of the chamber, and the upper surface of the filter terminals T(1), T(2) is not higher than the upper surface of the bottom wall 10a of the chamber (preferably the same The height is the same side). At this time, the upper end of the casing 110 is preferably not higher than the upper surface of the bottom wall 10a of the chamber.

各線圈104(1)、104(2)由空心線圈構成，除使充分大(例如約30A)的電流自加熱器電源52(IN)朝內側發熱線50(IN)流動之供電線功能外，就防止發熱(功率損耗)之觀點而言，為不具有肥粒鐵等磁芯而以空心方式獲得非常大的電感，更為獲得大的線路長，具有較粗的線圈線與較大的線圈尺寸(例如直徑為22~45mm，長度130~280mm)。 Each of the coils 104 (1) and 104 (2) is constituted by an air-core coil, and a power supply function of a sufficiently large (for example, about 30 A) current flowing from the heater power source 52 (IN) toward the inner heating wire 50 (IN) is performed. From the viewpoint of preventing heat generation (power loss), a very large inductance is obtained in a hollow manner without a magnetic core such as ferrite, and a large line length is obtained, and a thick coil wire and a large coil are obtained. Dimensions (for example, 22 to 45 mm in diameter and 130 to 280 mm in length).

於圓筒形機殼110中，兩線圈104(1)、104(2)沿在絕緣體例如樹脂所構成之下部電連接器116上垂直佇立之絕緣體例如樹脂所構成之圓筒或圓柱狀棒軸(捲筒)118外周面，順著軸方向重疊並進，並同時以相等卷線間隔及線圈長度s呈螺旋狀卷繞。兩線圈104(1)、104(2)各線圈導線如圖5所示，宜由具有同一剖面積之薄板或平角銅線構成，以絕緣體之管120包覆單方空心線圈104(2)之線圈導線。又，只要可藉由黏接劑或是棒軸118以外之支持構件以一體方式穩定固持兩線圈104(1)、104(2)，可省略棒軸118。 In the cylindrical casing 110, the two coils 104(1), 104(2) are cylindrical or cylindrical rod shafts formed of an insulator such as a resin which is vertically erected on the lower electrical connector 116 formed of an insulator such as a resin. The outer peripheral surface of the (reel) 118 is superposed and moved in the axial direction, and is spirally wound at equal winding intervals and coil lengths s. As shown in FIG. 5, the coil wires of the two coils 104(1) and 104(2) are preferably composed of a thin plate or a rectangular copper wire having the same sectional area, and the coil of the single-side air-core coil 104 (2) is covered by the tube 120 of the insulator. wire. Further, the rod shaft 118 can be omitted as long as the two coils 104(1), 104(2) can be stably held by the support member other than the adhesive or the rod shaft 118.

兩線圈104(1)、104(2)下端於下部電連接器116中分別電性連接連接導體122(1)、122(2)。此等連接導體122(1)、122(2)於電容器盒112內分別連接連 接點n(1)、n(2)及電容器106(1)、106(2)(圖3)。 The lower ends of the two coils 104(1), 104(2) are electrically connected to the connecting conductors 122(1), 122(2) in the lower electrical connector 116, respectively. The connecting conductors 122(1), 122(2) are respectively connected in the capacitor case 112. Contacts n(1), n(2) and capacitors 106(1), 106(2) (Fig. 3).

於接近機殼110上端之位置，棒軸118上端結合絕緣體例如樹脂所構成之上部電連接器124。於此上部電連接器124之上表面，設置例如銅所構成之板片狀或方塊狀濾波器端子T(1)、T(2)，俾以露出之狀態突出。此等濾波器端子T(1)、T(2)於上部電連接器124中分別連接線圈104(1)、104(2)上端。 At an upper end of the casing 110, the upper end of the rod shaft 118 is combined with an insulator such as a resin to form the upper electrical connector 124. On the upper surface of the upper electrical connector 124, a plate-like or square-shaped filter terminal T(1), T(2) made of, for example, copper is provided, and the ridge protrudes in an exposed state. The filter terminals T(1), T(2) are connected to the upper ends of the coils 104(1), 104(2) in the upper electrical connector 124, respectively.

機殼110上端形成開口。濾波器端子T(1)、T(2)之上表面不被遮蔽，以開放狀態與基座12正下方空間SP對向。又，濾波器端子T(1)、T(2)分別連接被封入絕緣體支持棒126之銷狀或棒狀供電導體52(IN1)、52(IN2)下端。 An opening is formed at an upper end of the casing 110. The upper surfaces of the filter terminals T(1) and T(2) are not shielded, and are opposed to the space SP directly under the susceptor 12 in an open state. Further, the filter terminals T(1) and T(2) are respectively connected to the lower ends of the pin-shaped or rod-shaped power supply conductors 52 (IN1) and 52 (IN2) to which the insulator support bars 126 are sealed.

又，濾波器單元54(OUT)具有與濾波器單元54(IN)相同之電路構成及物理性構造，在與濾波器單元54(IN)供電棒40之相反側之位置亦即點對稱之位置，被安裝於腔室10之底壁(基部)10a(圖8)。 Further, the filter unit 54 (OUT) has the same circuit configuration and physical structure as the filter unit 54 (IN), and is located at a position on the opposite side of the power supply rod 40 of the filter unit 54 (IN), that is, a point symmetrical position. It is attached to the bottom wall (base) 10a of the chamber 10 (Fig. 8).

〔濾波器單元之電性功能〕 [Electrical function of filter unit]

此實施形態之濾波器單元54(IN)中，在第1及第2濾波器102(1)、102(2)之線圈104(1)、104(2)與外導體機殼110之間形成分布常數線路105。 In the filter unit 54 (IN) of this embodiment, the coils 104 (1), 104 (2) of the first and second filters 102 (1), 102 (2) and the outer conductor casing 110 are formed. Distribution constant line 105.

一般而言，傳送線路之特性阻抗Zo在無損耗之情形下使用每單位長度之靜電電容C、電感L，以Zo=√(L/C)賦予之。且波長λ以下列式(1)賦予之。 In general, the characteristic impedance Zo of the transmission line is given by the electrostatic capacitance C and the inductance L per unit length without loss, and is given by Zo = √ (L/C). And the wavelength λ is given by the following formula (1).

λ=2π/(ω√(LC)．．．．(1) λ=2π/(ω√(LC)....(1)

一般分布常數線路(特別是同軸線路)中，線路中心係棒狀圓筒導體，相對於此，此濾波器單元54(IN)中，圓筒狀線圈係中心導體，此點不同。吾人認為，每單位長度之電感L主要係由起因於此圓筒狀線圈之電感支配。另一方面，每單位長度之靜電電容由線圈表面與外導體構成之電容器靜電電容C限定。因此，吾人認為，於此濾波器單元54(IN)，亦可形成每單位長度之電感及靜電電容分別為L、C時，特性阻抗以Zo=√(L/C)賦予之分布 常數線路。 In a general distributed constant line (especially a coaxial line), the center of the line is a rod-shaped cylindrical conductor. In contrast, in the filter unit 54 (IN), the cylindrical coil is a center conductor, and this point is different. I believe that the inductance L per unit length is mainly dominated by the inductance of the cylindrical coil. On the other hand, the electrostatic capacitance per unit length is defined by the capacitor electrostatic capacitance C composed of the coil surface and the outer conductor. Therefore, we believe that the filter unit 54 (IN) can also form a distribution of characteristic impedance with Zo=√(L/C) when the inductance and capacitance per unit length are L and C, respectively. Constant line.

若自端子T側觀察具有如此之分布常數線路之濾波器單元即知，相反側因具有較大電容(例如5000pF)之電容器而虛擬地短路，故可獲得以一定頻率間隔重複較大的阻抗的頻率-阻抗特性。波長與分布線路長同等時可獲得如此之阻抗特性。 If the filter unit having such a distributed constant line is observed from the terminal T side, the opposite side is virtually short-circuited by a capacitor having a large capacitance (for example, 5000 pF), so that a large impedance can be repeated at a certain frequency interval. Frequency-impedance characteristics. Such impedance characteristics are obtained when the wavelength is equal to the length of the distribution line.

此濾波器單元54(IN)中，非線圈104(1)、104(2)之卷線長，軸方向線圈長度s(圖4)才是分布線路長。又，因於中心導體使用線圈104(1)、104(2)，相較於棒狀圓筒導體時可大幅增大L，減小λ，故可實現線路長(線圈長度s)相對較短，同時與波長同等或在其以上之實際有效長，可獲得重複以相對較短之頻率間隔具有較大阻抗之阻抗特性。 In this filter unit 54 (IN), the coil lengths of the non-coils 104(1), 104(2) and the coil length s (Fig. 4) of the axial direction are the length of the distribution line. Moreover, since the coils 104(1) and 104(2) are used for the center conductor, L can be greatly increased and λ can be reduced as compared with the rod-shaped cylindrical conductor, so that the line length (coil length s) can be made relatively short. At the same time, the actual effective length is equal to or higher than the wavelength, and it is possible to obtain an impedance characteristic having a large impedance at a relatively short frequency interval.

在此，在形成於線圈104(1)、104(2)與機殼(外導體)110之間之分布常數線路105上，特性阻抗(特別是每單位長度之電感及電容)宜一定。關於此點，圖示之構成例中，圓筒形線圈104(1)、104(2)以同軸方式配置於圓筒形機殼(外導體)110中，故可嚴密地滿足此特性阻抗一定之要件。當然，即使於線圈104(1)、104(2)與機殼(外導體)110之間之間隙(距離間隔)有些許凹凸，只要在允許範圍(一般係在應隔斷之高頻波的波長之1/4以下)內，實質上可滿足特性阻抗一定之要件。 Here, the characteristic impedance (especially the inductance and capacitance per unit length) is preferably constant on the distributed constant line 105 formed between the coils 104(1), 104(2) and the casing (outer conductor) 110. In this regard, in the illustrated configuration example, the cylindrical coils 104 (1) and 104 (2) are coaxially arranged in the cylindrical casing (outer conductor) 110, so that the characteristic impedance can be strictly satisfied. The essentials. Of course, even if the gap (distance interval) between the coils 104(1), 104(2) and the casing (outer conductor) 110 is somewhat uneven, as long as it is within the allowable range (generally 1 of the wavelength of the high-frequency wave to be blocked) Within /4 or less), it is essential to meet the requirements of a certain characteristic impedance.

如此，於各濾波器102(1)、102(2)，可獲得進行多重並聯共振，且阻抗特性之穩定性、再現性優異之濾波器特性。 As described above, in each of the filters 102(1) and 102(2), it is possible to obtain filter characteristics in which multiple parallel resonances are performed, and stability and reproducibility of impedance characteristics are excellent.

〔加熱器供電線之迴繞構成〕 [The winding structure of the heater power supply line]

圖7及圖8顯示於基座12內部及正下方加熱器供電線100(1)、100(2)之迴繞構成。如圖7所示，絕緣體支持棒126及封入於其中之供電導體52(IN1)、52(IN2)於途中不彎曲而沿鉛直方向筆直延伸，縱斷空間SP。又，供電導體52(IN1)、52(IN2)之前端部***與基座12(背板28)下表面電性絕緣而安裝於同一面之插座端子128。 7 and 8 show the rewinding of the heater supply lines 100(1), 100(2) inside and below the susceptor 12. As shown in FIG. 7, the insulator support bar 126 and the power supply conductors 52 (IN1) and 52 (IN2) enclosed therein are not bent in the middle and extend straight in the vertical direction to break the space SP. Further, the front end portions of the power supply conductors 52 (IN1) and 52 (IN2) are inserted into the socket terminals 128 which are electrically insulated from the lower surface of the susceptor 12 (back plate 28) and are mounted on the same surface.

濾波器端子T(1)、T(2)與插座端子128位於較內側發熱線50(IN)之端子h1A、h2A更靠腔室10中心之位置(圖8)。於基座12之背板28及下部高頻電極30，形成供內部導體51(IN1)、51(IN2)通過之隧道狀通路132(132a、132b、132c)(圖7)。 The filter terminals T(1), T(2) and the socket terminal 128 are located closer to the center of the chamber 10 than the terminals h 1A and h 2A of the inner heating wire 50 (IN) (Fig. 8). The tunnel-shaped vias 132 (132a, 132b, 132c) through which the inner conductors 51 (IN1) and 51 (IN2) pass are formed on the back plate 28 and the lower high-frequency electrode 30 of the susceptor 12 (FIG. 7).

更詳細而言，於背板28內部形成自插座端子128水平延伸至發熱線端子h1A、h2A正下方之水平通路132a，與自此水平通路132a終端朝垂直上方延伸至背板28之上表面之垂直通路132b。且於下部高頻電極30，形成在與背板28側垂直通路132b重疊之位置沿垂直方向延伸之貫通孔垂直通路132c。內部導體51(IN1)、51(IN2)由例如導電率高之金屬例如銅構成，在因例如樹脂所構成之絕緣體134而與背板28及下部高頻電極30電性絕緣之狀態下通過通路132(132a、132b、132c)中，電性連接插座端子128與靜電吸盤32內之發熱線端子h1A、h2A。內部導體51(IN1)、51(IN2)亦可採用銷狀、棒狀或板狀等任何形態。 More specifically, a horizontal passage 132a extending horizontally from the socket terminal 128 to directly below the heating wire terminals h1A , h2A is formed inside the backing plate 28, and extends upwardly from the terminal of the horizontal passage 132a to the backing plate 28 The vertical path 132b of the surface. Further, the lower high-frequency electrode 30 is formed with a through-hole vertical passage 132c extending in the vertical direction at a position overlapping the vertical passage 132b on the backing plate 28 side. The inner conductors 51 (IN1) and 51 (IN2) are made of, for example, a metal having a high electrical conductivity, such as copper, and are electrically insulated from the backing plate 28 and the lower high-frequency electrode 30 by an insulator 134 made of, for example, a resin. 132 (132a, 132b, 132c) electrically connects the socket terminal 128 and the heating wire terminals h 1A and h 2A in the electrostatic chuck 32. The inner conductors 51 (IN1) and 51 (IN2) may be in any form such as a pin shape, a rod shape or a plate shape.

又，為以最小限之方式使設於通路132內之絕緣體134作用，如圖9所示，亦可於背板28之水平通路132a內僅在內部導體51(IN1)、51(IN2)下設置(舖設)絕緣體134，於背板28垂直通路132b內及下部高頻電極30垂直通路132內完全省略絕緣體134。 Moreover, the insulator 134 provided in the via 132 is operated in a minimum manner, as shown in FIG. 9, or in the horizontal via 132a of the backplane 28 only under the inner conductors 51 (IN1), 51 (IN2). The insulator 134 is disposed (laid), and the insulator 134 is completely omitted in the vertical passage 132b of the backing plate 28 and the vertical passage 132 of the lower high-frequency electrode 30.

〔依實施形態之作用〕 [According to the role of the embodiment]

此電漿處理裝置中，關於濾波器單元54(IN)、54(OUT)之配置及基座12周圍加熱器供電線100(1)、100(2)之迴繞，藉由採用如上述之構成，可大幅提升基座12上之電漿密度分布特性或半導體晶圓W上之處理特性(例如蝕刻速率特性)之面內均一性。 In the plasma processing apparatus, the arrangement of the filter units 54 (IN) and 54 (OUT) and the wraparound of the heater power supply lines 100 (1) and 100 (2) around the susceptor 12 are constituted by the above-described configuration. The in-plane uniformity of the plasma density distribution characteristics on the susceptor 12 or the processing characteristics (e.g., etch rate characteristics) on the semiconductor wafer W can be greatly improved.

如上述，於基座內建發熱體，具有用來在對該發熱體供給電力之加熱器供電線上阻擋高頻雜訊，或使其衰減之濾波器之習知之電漿處理裝置中，濾波器單元之配置位置與基座周圍之加熱器供電線之迴繞對基座上之 電漿密度分布特性或半導體晶圓上之處理特性係非對稱構造之一因。具體而言，因自高頻電源對基座下部高頻電極施加之一部分高頻波經由發熱體在加熱器供電線上漏洩，電漿密度或蝕刻速率在於基座正下方空間內延伸之加熱器供電線附近如被朝下拽拉般下降。亦即，於基座正下方空間內延伸之加熱器供電線之俯視像作為使基座上之電漿密度分布紊亂之特異點會反映或投影於電漿產生空間。 As described above, in the conventional plasma processing apparatus having a heating element built into the susceptor and having a filter for blocking high frequency noise or attenuating the heater power supply line for supplying electric power to the heating element, the filter The configuration position of the unit and the heater power supply line around the base are wound on the base The plasma density distribution characteristics or processing characteristics on a semiconductor wafer are one of the asymmetric structures. Specifically, a part of the high-frequency wave applied to the high-frequency electrode of the lower portion of the susceptor from the high-frequency power source leaks through the heating element on the heater power supply line, and the plasma density or etching rate is near the heater power supply line extending in the space directly under the susceptor. If it is pulled down, it will fall. That is, the top view image of the heater power supply line extending in the space directly under the pedestal is reflected or projected in the plasma generation space as a singular point that disturbs the plasma density distribution on the susceptor.

本案發明人以電磁場計算解析基座周圍(特別是在其正下方)之電位分布及電場分布得知，加熱器供電線上的電位於基座正下方空間內與供電棒或下部高頻電極之表面電位同程度地高(例如有約數千伏特)，進入濾波器單元中後因線圈阻抗沿線圈軸方向逐漸下降，於線圈終端降至數十伏特。 The inventor of the present invention calculated the potential distribution and electric field distribution around the susceptor (especially directly below) by electromagnetic field calculation, and the electric power on the heater power supply line is located in the space directly under the pedestal and the surface of the power supply rod or the lower high frequency electrode. The potential is as high as the degree (for example, there are about several thousand volts). After entering the filter unit, the impedance of the coil gradually decreases in the direction of the coil axis, and drops to several tens of volts at the end of the coil.

然而，習知之電漿處理裝置中，於基座與腔室底壁之間之空間內配置濾波器單元，且於該空間內沿橫方向迴繞有加熱器供電線(供電導體)。此時，於空間內沿橫方向延伸之加熱器供電線(供電導體)之俯視像或濾波器單元之上表面(蓋)之俯視像以非對稱且較大的面積投影於基座上的電漿密度分布。 However, in the conventional plasma processing apparatus, a filter unit is disposed in a space between the susceptor and the bottom wall of the chamber, and a heater power supply line (power supply conductor) is wound in the lateral direction in the space. At this time, the top view image of the heater power supply line (power supply conductor) extending in the lateral direction in the space or the top view image of the upper surface (cover) of the filter unit is projected onto the susceptor in an asymmetric and large area. Pulp density distribution.

且習知之電漿處理裝置中，沿腔室徑方向亦未考慮濾波器單元(特別是外側發熱體用濾波器單元)之配置位置，有時會將其配置於基座周邊部正下方。此時，於空間內迴繞之高電壓加熱器供電線(供電導體)有時會成為天線，自該處朝周圍接地電位構件，例如經由易於透射高頻波之介電質筒狀支持部(14)朝接地電位之導電性筒狀支持部(16)放射高頻之電波，因此濾波器之高頻隔斷功能顯著降低。 Further, in the conventional plasma processing apparatus, the arrangement position of the filter unit (especially the filter unit for the external heating element) is not considered in the direction of the chamber diameter, and it may be disposed directly below the peripheral portion of the susceptor. At this time, the high-voltage heater supply line (power supply conductor) wound in the space may become an antenna from which the ground potential member is grounded, for example, via a dielectric cylindrical support portion (14) that easily transmits high-frequency waves. The conductive cylindrical support portion (16) of the ground potential radiates high-frequency radio waves, so that the high-frequency blocking function of the filter is remarkably lowered.

關於此點，本發明呈不將濾波器單元54(IN)、54(OUT)置入基座12正下方空間SP內之配置構成。特別是於此實施形態中，濾波器單元54(IN)之機殼110之上端於基座12正下方與腔室10之底壁(基部)10a之上表面高度相同，或較腔室底壁10a之上表面低，安裝於腔室底壁10a之開口114。藉此， 配置收納於機殼110之線圈104(1)、104(2)在較接地電位之腔室底壁10a之上表面低之位置，故因腔室底壁10a自基座12電磁性地被遮蔽，不投影於電漿產生空間。亦即，其不會成為使電漿密度分布紊亂之特異點。濾波器單元54(OUT)側之線圈104(1)、104(2)亦相同。 In this regard, the present invention is configured such that the filter units 54 (IN) and 54 (OUT) are not placed in the space SP directly under the susceptor 12. In particular, in this embodiment, the upper end of the casing 110 of the filter unit 54 (IN) is at the same height as the upper surface of the bottom wall (base) 10a of the chamber 10 directly below the susceptor 12, or the bottom wall of the chamber. The upper surface of 10a is low and is mounted to the opening 114 of the bottom wall 10a of the chamber. With this, The coils 104(1), 104(2) housed in the casing 110 are disposed at a position lower than the upper surface of the chamber bottom wall 10a of the ground potential, so that the chamber bottom wall 10a is electromagnetically shielded from the susceptor 12 , not projected in the plasma generation space. That is, it does not become a singular point that distort the plasma density distribution. The coils 104(1), 104(2) on the filter unit 54 (OUT) side are also the same.

另一方面，於空間SP內迴繞之供電導體52(IN1)、52(IN2)雖投影於基座12上的電漿密度分布，但其不橫向彎曲而沿鉛直方向筆直延伸，故其投影面積已盡可能地減小。且位於腔室10靠中心之位置。因此，對基座12上的電漿密度分布造成的影響度非常小。濾波器單元54(OUT)側之供電導體52(OUT1)、52(OUT2)亦相同。 On the other hand, although the power supply conductors 52 (IN1) and 52 (IN2) wound in the space SP are projected onto the susceptor 12 with a plasma density distribution, they are not bent laterally and extend straight in the vertical direction, so the projected area thereof Has been reduced as much as possible. It is located at the center of the chamber 10. Therefore, the degree of influence on the plasma density distribution on the susceptor 12 is very small. The power supply conductors 52 (OUT1) and 52 (OUT2) on the filter unit 54 (OUT) side are also the same.

且於基座12內部迴繞之內部導體51(IN1)、51(IN2)完全被收納(隱藏)於導體背板28及下部高頻電極30之通路132中，故不會對電漿產生空間造成影響，完全無使基座12上的電漿密度分布紊亂之虞。 The inner conductors 51 (IN1) and 51 (IN2) which are wound inside the susceptor 12 are completely accommodated (hidden) in the path 132 of the conductor back plate 28 and the lower high-frequency electrode 30, so that no space is generated for the plasma. The effect is completely devoid of the disorder of the plasma density distribution on the susceptor 12.

且於此實施形態中，配置供電導體52(IN1)、52(IN2)於靠腔室10中心之位置，充分遠離介電質筒狀支持部14，故無自供電導體52(IN1)、52(IN2)經由介電質筒狀支持部14朝接地電位之導電性筒狀支持部16放射高頻之電波之虞。濾波器單元54(OUT)側之供電導體52(OUT1)、52(OUT2)亦相同。 In this embodiment, the power supply conductors 52 (IN1) and 52 (IN2) are disposed at a position away from the center of the chamber 10, and are sufficiently separated from the dielectric cylindrical support portion 14, so that there are no self-power supply conductors 52 (IN1), 52. (IN2) The high-frequency radio wave is radiated to the conductive cylindrical support portion 16 of the ground potential via the dielectric cylindrical support portion 14. The power supply conductors 52 (OUT1) and 52 (OUT2) on the filter unit 54 (OUT) side are also the same.

且濾波器單元54(IN)中，機殼110之上端形成開口，濾波器端子T(1)、T(2)因露出不受遮蔽，以開放狀態面對基座12正下方空間SP。又，不要說是供電導體52(IN1)、52(IN2)，封入此等者之絕緣體支持棒126亦不接觸腔室底壁10a(開口114內側面)。藉此，如後述，可使濾波器端子T(1)、T(2)附近之雜散電容充分夠小，使濾波器102(1)、102(2)之頻率-阻抗特性穩定化。於濾波器單元54(OUT)亦相同。 In the filter unit 54 (IN), an opening is formed at the upper end of the casing 110, and the filter terminals T(1) and T(2) are exposed without being shielded, and face the space SP directly below the susceptor 12 in an open state. Further, it is not to say that the power supply conductors 52 (IN1) and 52 (IN2), and the insulator support bars 126 enclosed therein do not contact the chamber bottom wall 10a (the inner side surface of the opening 114). Thereby, as will be described later, the stray capacitance in the vicinity of the filter terminals T(1) and T(2) can be sufficiently small, and the frequency-impedance characteristics of the filters 102(1) and 102(2) can be stabilized. The filter unit 54 (OUT) is also the same.

圖10A及圖10B顯示關於依本實施形態之濾波器單元54(IN)、54(OUT)之配置及供電導體52(IN1)、52(IN2)，52(OUT1)、52(OUT2)之迴繞，不宜之數例X1~X5。 10A and 10B show the arrangement of the filter units 54 (IN) and 54 (OUT) according to the present embodiment, and the winding of the power supply conductors 52 (IN1), 52 (IN2), 52 (OUT1), and 52 (OUT2). , not suitable for a few cases X 1 ~ X 5 .

例如，於空間SP內供電導體52(OUT1)、52(OUT2)沿橫方向迴繞(圖10A X1)如上述投影於基座12上之電漿密度分布之供電導體52(OUT1)、52(OUT2)之俯視像會增大，故不宜。且於腔室底壁10a之開口114附近供電導體52(IN1)、52(IN2)橫向迴繞(圖10A X2)因會使供電導體52(IN1)、52(IN2)接近腔室底壁10a而增大雜散電容，故不宜。且使濾波器單元54(OUT)之機殼110高於腔室底壁10a之上表面(圖10A X3)亦因該部分會投影於基座12上的電漿密度分布，故不宜。 For example, in the space SP, the power supply conductors 52 (OUT1) and 52 (OUT2) are rewound in the lateral direction (Fig. 10A X 1 ) as the above-described power supply conductors 52 (OUT1), 52 of the plasma density distribution projected on the susceptor 12. The top view of OUT2) will increase, so it is not suitable. And the power supply conductors 52 (IN1), 52 (IN2) are laterally wound around the opening 114 of the chamber bottom wall 10a (Fig. 10A X 2 ) because the power supply conductors 52 (IN1), 52 (IN2) are close to the chamber bottom wall 10a. It is not appropriate to increase the stray capacitance. Moreover, it is not preferable to make the casing 110 of the filter unit 54 (OUT) higher than the upper surface of the chamber bottom wall 10a (Fig. 10A X 3 ) because the portion is projected onto the plasma density distribution on the susceptor 12.

供電導體52(OUT1)、52(OUT2)接近介電質筒狀支持部14(圖10B X4)如上述會使高頻之電磁波易於自供電導體52(OUT1)、52(OUT2)經由介電質筒狀支持部14朝接地電位之導電性筒狀支持部16放射，故不宜。例如，相對介電常數為10，由陶瓷所構成之介電質筒狀支持部14相對於高頻波之透射性與其1/10厚度之空間同等。亦即，因介電質筒狀支持部14介在，供電導體52(OUT1)、52(OUT2)更接近接地電位之導電性筒狀支持部16。 The power supply conductors 52 (OUT1) and 52 (OUT2) are close to the dielectric cylindrical support portion 14 (Fig. 10B X 4 ). As described above, high-frequency electromagnetic waves are easily transmitted from the power supply conductors 52 (OUT1) and 52 (OUT2) via the dielectric. The cylindrical support portion 14 is radiated toward the conductive cylindrical support portion 16 having the ground potential, which is not preferable. For example, the relative dielectric constant is 10, and the transmittance of the dielectric cylindrical support portion 14 made of ceramics with respect to high-frequency waves is equivalent to the space of 1/10 of the thickness. That is, the dielectric cylindrical support portion 14 is interposed between the power supply conductors 52 (OUT1) and 52 (OUT2) and the conductive cylindrical support portion 16 closer to the ground potential.

且於腔室底壁10a之開口114設置包覆濾波器端子T(1)、T(2)或供電導體52(IN1)、52(IN2)下端部之外殼136(圖10B X5)無論其材質為何(無論是導體或介電質中之何者)，其只要突出於腔室底壁10a上即會投影於基座12上之電漿密度分布故不宜，且濾波器端子T(1)、T(2)附近之雜散電容會增大故不宜。 And the outer casing 136 (Fig. 10B X 5 ) covering the lower end of the filter terminals T(1), T(2) or the power supply conductors 52 (IN1) and 52 (IN2) is provided in the opening 114 of the chamber bottom wall 10a. What is the material (whether in the conductor or the dielectric), as long as it protrudes from the bottom wall 10a of the chamber, the plasma density distribution projected on the susceptor 12 is not suitable, and the filter terminal T(1), The stray capacitance near T(2) will increase and it is not suitable.

雖已省略圖示，但有自基座12下表面或腔室10底面10a朝空間SP突出之突起物亦會對基座12上之電漿密度分布有所影響，故不宜。 Although the illustration is omitted, the protrusions protruding from the lower surface of the susceptor 12 or the bottom surface 10a of the chamber 10 toward the space SP may also affect the plasma density distribution on the susceptor 12, which is not preferable.

圖11顯示本實施形態中使高頻雜訊自高頻電源34(36)通過第1加熱器供電線100(1)朝接地流動之高頻傳播路之等價電路。此等價電路中，電容器140係高頻電極30與內側發熱線50(IN)或內部導體51(IN1)之間之靜電電容。電阻140主要係內側發熱線50(IN)之電阻。電感器144係供電導體52(IN1)之電感，電容器146係供電導體52(IN1)及濾波器端子T(1)附近之雜散電 容。又，濾波器102(1)內之雜散電容及電阻分已忽視(省略)。 Fig. 11 shows an equivalent circuit of the high-frequency propagation path for causing high-frequency noise from the high-frequency power source 34 (36) to flow to the ground through the first heater power supply line 100 (1) in the present embodiment. In this equivalent circuit, the capacitor 140 is an electrostatic capacitance between the high frequency electrode 30 and the inner heating wire 50 (IN) or the inner conductor 51 (IN1). The resistor 140 is mainly the resistance of the inner heating wire 50 (IN). The inductor 144 is an inductance of the power supply conductor 52 (IN1), and the capacitor 146 is a stray electric current near the power supply conductor 52 (IN1) and the filter terminal T(1). Rong. Further, the stray capacitance and resistance in the filter 102(1) are ignored (omitted).

此等價電路中，推測自基座12經由電感器144、電容器(雜散電容)146、濾波器102(1)內之線圈104(1)及電容器106(1)抵達接地電位之高頻傳播路時之頻率-阻抗特性ZA(f)例如圖12所示。且推測自基座12經由電感器144及電容器(雜散電容)146抵達接地電位之高頻傳播路時之頻率-阻抗特性ZB(f)例如圖13所示。 In this equivalent circuit, it is presumed that the susceptor 12 reaches the ground potential via the inductor 144, the capacitor (stray capacitance) 146, the coil 104(1) in the filter 102(1), and the capacitor 106(1). The frequency-impedance characteristic ZA(f) of the road time is as shown in FIG. It is presumed that the frequency-impedance characteristic ZB(f) when the susceptor 12 reaches the high-frequency propagation path of the ground potential via the inductor 144 and the capacitor (stray capacitance) 146 is as shown in FIG.

濾波器102(1)之頻率-阻抗特性ZA(f)合成有藉由線圈104(1)與外導體機殼110形成之分布常數線路105之頻率-阻抗特性(多重並聯共振特性)，與電感器144及電容器(雜散電容)146所構成之LC串聯電路150之頻率-阻抗特性ZB(f)。亦即，分布常數線路105之頻率-阻抗特性因位於其前段之LC串聯電路150之頻率-阻抗特性受到限制，朝LC串聯電路150之串聯共振頻率fSR頻率愈高多重並聯共振特性中並聯共振點之峰值愈逐漸降低。 The frequency-impedance characteristic ZA(f) of the filter 102(1) is synthesized with a frequency-impedance characteristic (multiple parallel resonance characteristic) of the distributed constant line 105 formed by the coil 104(1) and the outer conductor casing 110, and an inductance The frequency-impedance characteristic ZB(f) of the LC series circuit 150 formed by the 144 and the capacitor (stray capacitance) 146. That is, the frequency-impedance characteristic of the distributed constant line 105 is limited by the frequency-impedance characteristic of the LC series circuit 150 located at the front stage thereof, and the higher the series resonance frequency f SR toward the LC series circuit 150, the parallel resonance in the multiple parallel resonance characteristic The peak of the point gradually decreases.

在此，於LC串聯電路150之頻率-阻抗特性ZB(f)中，電容器146之靜電電容愈大，如圖13所示，串聯共振頻率fSR愈為較低的值(fSR→fSR')，於較其更低之頻率區域阻抗整體降低(ZB(f)→ZB(f)')。如此，如圖12所示，於濾波器102(1)之頻率-阻抗特性ZA(f)中，在較串聯共振頻率fSR低之所有並聯共振點及頻率區域中阻抗亦降低(ZA(f)→ZA(f)')。 Here, the frequency of the series LC circuit 150 to the - characteristic impedance ZB (f), the capacitor 146 of the electrostatic capacitance larger, 13, the series resonance frequency f SR more low value (f SR → f SR '), the impedance is reduced overall (ZB(f) → ZB(f)') in the lower frequency region. Thus, as shown in FIG. 12, in the frequency-impedance characteristic ZA(f) of the filter 102(1), the impedance is also lowered in all parallel resonance points and frequency regions which are lower than the series resonance frequency fSR (ZA(f) )→ZA(f)').

且電漿產生用第1高頻波HF之基本頻率為例如100MHz時，其第2高次諧波之頻率為200Mz。在此，例如圖13所示，移動至串聯共振頻率fSR低之頻率區域，接近第2高次諧波之頻率(200Mz)後，第2高次諧波之大電流即會在加熱器供電線100(1)上流動。 When the fundamental frequency of the first high-frequency wave HF for plasma generation is, for example, 100 MHz, the frequency of the second harmonic is 200 Mz. Here, for example, as shown in FIG. 13, after moving to a frequency region where the series resonance frequency f SR is low, and close to the frequency of the second harmonic (200 Mz), the large current of the second harmonic is supplied to the heater. The wire 100(1) flows.

因此，為使濾波器102(1)之高頻波隔斷功能穩定化，盡可能減小供電導體52(OUT1)及濾波器端子T(1)周圍之雜散電容146相當重要。於此實施形態中，如上述，於濾波器單元54(IN)，機殼110上端形成開口，濾波器端子T(1)因露出而不受遮蔽，以開放狀態與基座12正下方空間SP對向。又，不要 說是供電導體52(IN1)，將其封入之絕緣體支持棒126亦不接觸腔室底壁10a(開口114內側面)。藉此，盡可能減小雜散電容146，將LC串聯電路150之串聯共振頻率fSR盡可能地設定於較高頻率區域，使濾波器102(1)之頻率-阻抗特性(特別是多重並聯共振特性)穩定化。此於第2加熱器供電線(2)亦相同。 Therefore, in order to stabilize the high-frequency wave blocking function of the filter 102(1), it is important to minimize the stray capacitance 146 around the power supply conductor 52 (OUT1) and the filter terminal T(1). In this embodiment, as described above, in the filter unit 54 (IN), an opening is formed at the upper end of the casing 110, and the filter terminal T(1) is not shielded from being exposed, and is in an open state and a space SP directly below the susceptor 12. Opposite. Further, not to mention the power supply conductor 52 (IN1), the insulator support rod 126 enclosed therein does not contact the chamber bottom wall 10a (the inner side surface of the opening 114). Thereby, the stray capacitance 146 is minimized, and the series resonant frequency f SR of the LC series circuit 150 is set as much as possible in the higher frequency region, so that the frequency-impedance characteristic of the filter 102 (1) (especially multiple parallel Resonance characteristics) Stabilization. This is also the same for the second heater power supply line (2).

又，本實施形態中，雖可使濾波器單元54(IN)、54(OUT)之機殼110遠離腔室底壁10a之開口114而配置於腔室底壁10a之下，但不佳。亦即，若腔室底壁10a之開口114貫通而開放，該處不僅會成為將基座12上之電漿密度分布往上提高之反方向特異點，亦因供電導體52(IN1)、52(IN2)通過該開口114而會使供電導體52(IN1)、52(IN2)周圍之雜散電容146增大。且就大氣中之微粒、粉塵、水分等於開口114出入之點而言亦不宜。因此，宜安裝濾波器單元54(IN)、54(OUT)之機殼110，俾封閉腔室底壁10a之開口114，最好是如本實施形態，安裝成濾波器端子T(1)、T(2)之上表面與腔室底壁10a之上表面高度相同。 Further, in the present embodiment, the casings 110 of the filter units 54 (IN) and 54 (OUT) can be disposed below the chamber bottom wall 10a with the opening 114 of the chamber bottom wall 10a, but this is not preferable. That is, if the opening 114 of the bottom wall 10a of the chamber is open and open, it will not only become a tangible point in the opposite direction of increasing the plasma density distribution on the susceptor 12, but also because of the power supply conductors 52 (IN1), 52. (IN2) The stray capacitance 146 around the power supply conductors 52 (IN1) and 52 (IN2) is increased by the opening 114. It is also inappropriate for the point where the particles, dust and moisture in the atmosphere are equal to the opening and exit of the opening 114. Therefore, it is preferable to install the filter unit 54 (IN), the casing 110 of the 54 (OUT), and the opening 114 of the bottom wall 10a of the closed chamber, preferably as the filter terminal T (1), as in the embodiment. The upper surface of T(2) is the same height as the upper surface of the chamber bottom wall 10a.

〔其他實施形態或變形例〕 [Other Embodiments or Modifications]

以上雖已說明本發明之較佳實施形態，但本發明不由上述實施形態限定，可在其技術構想範圍內進行各種變形。 The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications can be made within the scope of the technical concept.

例如，上述實施形態之電漿處理裝置中，如圖14及圖15所示，亦可於基座12設置絕緣體背板152。此背板152中，上表面接合下部高頻電極30之上表面，下表面面對空間SP。 For example, in the plasma processing apparatus of the above-described embodiment, as shown in FIGS. 14 and 15, an insulator back plate 152 may be provided on the susceptor 12. In this back plate 152, the upper surface engages the upper surface of the lower high frequency electrode 30, and the lower surface faces the space SP.

於背板152中心部，形成供供電棒40通往下部高頻電極30側之貫通孔153。且在背板152位於濾波器單元54(IN)、54(OUT)正上方之部位，亦形成供供電導體52(IN1)、52(IN12)及供電導體52(OUT1)、52(OUT2)通往下部高頻電極30側之貫通孔154(IN)、154(OUT)。 A through hole 153 is formed in the center portion of the back plate 152 to feed the power supply rod 40 to the lower high frequency electrode 30 side. And the back plate 152 is located directly above the filter units 54 (IN), 54 (OUT), and also forms the power supply conductors 52 (IN1), 52 (IN12) and the power supply conductors 52 (OUT1), 52 (OUT2). The through holes 154 (IN) and 154 (OUT) on the lower high frequency electrode 30 side.

於下部高頻電極30下表面，設有接受供電導體52(IN1)、52(IN2)上端之 插座端子156。且於下部高頻電極30，於下表面形成自插座端子156水平延伸至發熱線端子h1A、h2A正下方之溝槽158，並形成自溝槽158終端朝垂直上方延伸至電極30之上表面之貫通孔垂直通路160。內部導體51(IN1)、51(IN2)自插座端子156於背板152之上表面匍伏通過溝槽158中，自溝槽158終端於垂直通路160中上升，到達發熱線端子h1A、h2A。 On the lower surface of the lower high-frequency electrode 30, a socket terminal 156 that receives the upper ends of the power supply conductors 52 (IN1) and 52 (IN2) is provided. And on the lower high-frequency electrode 30, a groove 158 extending horizontally from the socket terminal 156 to the lower side of the heating wire terminals h 1A and h 2A is formed on the lower surface, and is formed to extend vertically upward from the terminal of the groove 158 to the electrode 30. The through hole of the surface is a vertical passage 160. The inner conductors 51 (IN1), 51 (IN2) lie in the groove 158 from the upper surface of the back plate 152 from the socket terminal 156, and rise from the end of the groove 158 in the vertical path 160 to reach the heating wire terminal h 1A , h 2A .

如此，於基座12設置絕緣體背板152時，藉由採用在形成於下部高頻電極30下表面之溝槽158中內部導體51(IN1)、51(IN2)沿橫方向匍伏迴繞之構成，可將內部導體51(IN1)、51(IN2)隱藏於下部高頻電極30中，並亦可在實質上確保下部高頻電極30下表面之平坦性。因此，不因內部導體51(IN1)、51(IN2)之迴繞使基座12上之電漿密度分布受到影響。 Thus, when the insulator back plate 152 is disposed on the susceptor 12, the inner conductors 51 (IN1) and 51 (IN2) are undulating in the lateral direction by using the grooves 158 formed in the lower surface of the lower high-frequency electrode 30. The inner conductors 51 (IN1) and 51 (IN2) can be hidden in the lower high-frequency electrode 30, and the flatness of the lower surface of the lower high-frequency electrode 30 can be substantially ensured. Therefore, the plasma density distribution on the susceptor 12 is not affected by the rewinding of the inner conductors 51 (IN1), 51 (IN2).

上述實施形態中，內建於基座12之發熱體50沿基座12之徑方向2分割為內側發熱線50(IN)與外側發熱線50(OUT)。然而，亦可使發熱體50例如沿徑方向成為3分割為內側發熱線50(IN)、中間發熱線50(MI)與外側發熱線50(OUT)之構成，或是4分割為內側發熱線50(IN)、靠內中間發熱線50(MIin)、靠外中間發熱線50(MIout)與外側發熱線50(OUT)。 In the above embodiment, the heat generating body 50 built in the susceptor 12 is divided into the inner heating wire 50 (IN) and the outer heating wire 50 (OUT) in the radial direction 2 of the susceptor 12. However, the heating element 50 may be divided into three, for example, the inner heating wire 50 (IN), the intermediate heating wire 50 (MI), and the outer heating wire 50 (OUT) in the radial direction, or may be divided into four inner heating wires. 50 (IN), inner middle heating wire 50 (MI in ), outer intermediate heating wire 50 (MI out ) and outer heating wire 50 (OUT).

3分割式中，如圖16A所示，宜以靠腔室10中心部亦即供電棒40之方式在同心圓上等間隔(間隔120°)地配置分別對應內側發熱線50(IN)、中間發熱線50(MI)及外側發熱線50(OUT)之3個濾波器單元54(IN)、54(MI)、54(OUT)。此時，較內側發熱線50(IN)之端子h1A、h2A更朝徑方向內側(靠中心)地配置濾波器單元54(IN)。 In the three-divided type, as shown in FIG. 16A, it is preferable to arrange the inner heating wires 50 (IN) and the intermediate portions at equal intervals (interval 120°) on the concentric circles so as to be centered on the power supply rod 40 of the chamber 10. Three filter units 54 (IN), 54 (MI), and 54 (OUT) of the heating line 50 (MI) and the outer heating line 50 (OUT). At this time, the filter unit 54 (IN) is disposed on the inner side (centered) in the radial direction from the terminals h 1A and h 2A of the inner heating wire 50 (IN).

當然，在此等濾波器單元54(IN)、54(MI)、54(OUT)與介電質筒狀支持部14之間可隔開充分的距離間隔時，如圖16B所示，亦可較內側發熱線50(IN)之端子h1A、h2A更朝徑方向外側地配置濾波器單元54(IN)。惟此時3個濾波器單元54(IN)、54(MI)、54(OUT)亦宜在同心圓上等間隔(間隔120°)地配置。 Of course, when the filter units 54 (IN), 54 (MI), 54 (OUT) and the dielectric cylindrical support portion 14 can be separated by a sufficient distance, as shown in FIG. 16B, The filter unit 54 (IN) is disposed on the outer side in the radial direction from the terminals h 1A and h 2A of the inner heating wire 50 (IN). However, it is preferable that the three filter units 54 (IN), 54 (MI), and 54 (OUT) are arranged at equal intervals (interval 120) on the concentric circles.

同樣地，4分割式時，如圖17A所示，亦宜以靠腔室10中心部亦即供電棒40之方式在同心圓上等間隔(間隔90°)地配置分別對應內側發熱線50(IN)、靠內中間發熱線50(MIin)、靠外中間發熱線50(MIout)及外側發熱線50(OUT)之4個濾波器單元54(IN)、54(MIin)、54(MIout)、54(OUT)。此時，較內側發熱線50(IN)之端子h1A、h2A更朝徑方向內側(靠中心)地配置濾波器單元54(IN)。 Similarly, in the case of the four-divided type, as shown in FIG. 17A, it is also preferable to arrange the corresponding inner heating wires 50 at equal intervals (interval by 90°) on the concentric circles so as to be centered on the power supply rod 40 of the chamber 10 ( IN), the inner intermediate heating wire 50 (MI in ), the outer intermediate heating wire 50 (MI out ), and the outer heating wire 50 (OUT), four filter units 54 (IN), 54 (MI in ), 54 (MI out ), 54 (OUT). At this time, the filter unit 54 (IN) is disposed on the inner side (centered) in the radial direction from the terminals h 1A and h 2A of the inner heating wire 50 (IN).

當然，在此等濾波器單元54(IN)、54(MIin)、54(MIout)、54(OUT)與介電質筒狀支持部14之間可隔開充分的距離間隔時，如圖17B所示，亦可較內側發熱線50(IN)或是靠內中間發熱線50(MIin)更朝徑方向外側地配置此等濾波器單元。此時，如圖17C所示，亦宜在同心圓上等間隔(間隔90°)地配置4個濾波器單元54(IN)、54(MIin)、54(MIout)、54(OUT)。 Of course, when such filter units 54 (IN), 54 (MI in ), 54 (MI out ), 54 (OUT) and the dielectric cylindrical support portion 14 can be separated by a sufficient distance, such as As shown in Fig. 17B, these filter units may be disposed on the outer side in the radial direction from the inner heating wire 50 (IN) or the inner intermediate heating wire 50 (MI in ). At this time, as shown in FIG. 17C, it is also preferable to arrange four filter units 54 (IN), 54 (MI in ), 54 (MI out ), and 54 (OUT) at equal intervals (interval 90°) on the concentric circles. .

且於本發明，就濾波器單元54之內部構成亦可進行各種變形。例如，設於濾波器單元54內之濾波器102(1)、102(2)於上述實施形態中雖具有單一空心線圈102(1)、102(2)，但亦可係串聯連接複數線圈而成之構成，或具有實心線圈(例如環式線圈)之構成等。 Further, in the present invention, various modifications can be made to the internal configuration of the filter unit 54. For example, the filters 102(1) and 102(2) provided in the filter unit 54 have the single air-core coils 102(1) and 102(2) in the above embodiment, but may be connected in series to the plurality of coils. The composition is either a solid coil (for example, a loop coil) or the like.

上述實施形態中，在腔室10經固定之底壁10a上隔著空間SP於一定高度位置配置基座12。然而，如圖18所示，於腔室10內基座12可上下移動或位移之電漿處理裝置中，可將濾波器單元54(IN)、54(OUT)安裝於隔著介電質筒狀支持部14支持基座12之可昇降之可動基部162。在此，於基座12、介電質筒狀支持部14與可動基部162之間形成通往大氣空間之空間SP。 In the above embodiment, the susceptor 12 is disposed at a fixed height position on the bottom wall 10a of the chamber 10 via the space SP. However, as shown in FIG. 18, in the plasma processing apparatus in which the susceptor 12 can be moved up or down or displaced in the chamber 10, the filter units 54 (IN) and 54 (OUT) can be mounted via the dielectric cylinder. The support portion 14 supports the movable base 162 of the base 12 that can be raised and lowered. Here, a space SP to the atmosphere space is formed between the susceptor 12, the dielectric cylindrical support portion 14 and the movable base portion 162.

於可動基部162與腔室10之底壁10a之間設有筒狀伸縮囊164。此伸縮囊164使經由檔板166連通電漿產生空間(處理空間)之排氣路18朝下方延長，並將排氣路18及電漿產生空間(處理空間)自大氣空間隔離或隔斷。 A cylindrical bellows 164 is provided between the movable base 162 and the bottom wall 10a of the chamber 10. The bellows 164 extends the exhaust passage 18 that communicates with the plasma generating space (processing space) via the baffle 166 downward, and isolates or blocks the exhaust passage 18 and the plasma generating space (processing space) from the atmospheric space.

在由伸縮囊164包圍之空間內，沿縱方向連接設置上部腳部168、環狀板170及下部腳部172。上部腳部168上端結合可動基部162下表面，上部腳 部168下端結合環狀板170之上表面。環狀板170下表面結合下部腳部172上端。下部腳部172下端結合連結部174之板部174a。 In the space surrounded by the bellows 164, the upper leg portion 168, the annular plate 170, and the lower leg portion 172 are connected in the longitudinal direction. The upper end of the upper leg 168 is coupled to the lower surface of the movable base 162, and the upper leg The lower end of the portion 168 is coupled to the upper surface of the annular plate 170. The lower surface of the annular plate 170 is coupled to the upper end of the lower leg portion 172. The lower end of the lower leg portion 172 is coupled to the plate portion 174a of the coupling portion 174.

連結部174包含上述板部174a及2個柱狀部174b。板部174a設於腔室10下部下方。此構成例中，於板部174a安裝下部匹配單元38。 The connecting portion 174 includes the plate portion 174a and the two columnar portions 174b. The plate portion 174a is provided below the lower portion of the chamber 10. In this configuration example, the lower matching unit 38 is attached to the plate portion 174a.

於板部174a、環狀板170及可動基部162分別形成沿軸線Z方向延伸之貫通孔，下部供電棒40通過此等貫通孔沿垂直方向延伸至基座12(導體背板28)下表面。 The plate portion 174a, the annular plate 170, and the movable base portion 162 respectively form through holes extending in the direction of the axis Z, and the lower power supply rods 40 extend in the vertical direction through the through holes to the lower surface of the susceptor 12 (the conductor back plate 28).

柱狀部174b自板部174a周緣朝上方延伸。且柱狀174b於腔室10外與腔室10側壁10d大致平行延伸。此等柱狀部174b連接例如滾珠螺桿所構成之進給機構。具體而言，2個螺軸176於腔室側壁10d外側與2個柱狀部174b大致平行延伸。此等螺軸176分別連接2個馬達178。且於此等螺軸176分別安裝有2個螺帽180。此等螺帽180分別結合2個柱狀部174b。 The columnar portion 174b extends upward from the peripheral edge of the plate portion 174a. The columnar shape 174b extends substantially parallel to the side wall 10d of the chamber 10 outside the chamber 10. These columnar portions 174b are connected to a feed mechanism constituted by, for example, a ball screw. Specifically, the two screw shafts 176 extend substantially parallel to the two columnar portions 174b outside the chamber side wall 10d. These screws 176 are connected to two motors 178, respectively. Two nuts 180 are attached to the screw shafts 176, respectively. These nuts 180 are combined with the two columnar portions 174b, respectively.

依該昇降驅動機構，藉由使馬達178旋轉，螺帽180沿軸線Z方向移動亦即上下動。隨著螺帽180上下動，隔著可動基部162間接由連結部174支持之基座12可沿軸線Z方向移動亦即上下動。且隨著基座12上下動，伸縮囊164伸縮。其結果，可以可變方式調整基座12與上部電極64之間之距離。 According to the lift drive mechanism, by rotating the motor 178, the nut 180 moves in the direction of the axis Z, that is, up and down. As the nut 180 moves up and down, the base 12, which is indirectly supported by the coupling portion 174 via the movable base 162, is movable in the direction of the axis Z, that is, up and down. And as the base 12 moves up and down, the bellows 164 expands and contracts. As a result, the distance between the susceptor 12 and the upper electrode 64 can be adjusted in a variable manner.

又，此電漿處理裝置中，內建於基座12之發熱體50設於包夾在靜電吸盤32與高頻電極30之間之絕緣薄片181中。且上部電極64隔著環狀絕緣體182安裝於腔室10之上表面。輸出電漿產生用第1高頻波HF之高頻電源34經由上部匹配單元184及上部供電棒186電性連接上部電極64。且輸出離子導入用第2高頻波LF之高頻電源36經由下部匹配單元38內之匹配器(未經圖示)及下部供電棒40電性連接基座12。 Further, in the plasma processing apparatus, the heat generating body 50 built in the susceptor 12 is provided in the insulating sheet 181 sandwiched between the electrostatic chuck 32 and the high-frequency electrode 30. The upper electrode 64 is attached to the upper surface of the chamber 10 via an annular insulator 182. The high frequency power source 34 for outputting the plasma generated first high frequency wave HF is electrically connected to the upper electrode 64 via the upper matching unit 184 and the upper power supply rod 186. The high-frequency power source 36 that outputs the second high-frequency wave LF for ion introduction is electrically connected to the susceptor 12 via a matching device (not shown) in the lower matching unit 38 and the lower power supply rod 40.

本發明不限定於電容耦合型電漿蝕刻裝置，亦可適用於微波電漿蝕刻裝置或電感耦合電漿蝕刻裝置、螺旋波電漿蝕刻裝置等，且亦可適用於電 漿CVD、電漿氧化、電漿氮化、濺鍍等其他電漿處理裝置。且依本發明之被處理基板不限於半導體晶圓，亦可係平面顯示器、有機EL、太陽能電池用各種基板或光罩、CD基板、印刷基板等。 The invention is not limited to the capacitive coupling type plasma etching device, and can also be applied to a microwave plasma etching device, an inductively coupled plasma etching device, a spiral wave plasma etching device, etc., and can also be applied to electricity. Other plasma processing devices such as plasma CVD, plasma oxidation, plasma nitridation, and sputtering. Further, the substrate to be processed according to the present invention is not limited to a semiconductor wafer, and may be a flat panel display, an organic EL, various substrates for solar cells, a photomask, a CD substrate, a printed substrate, or the like.

微波放電式電漿處理裝置，特別是電漿蝕刻裝置中，於腔室內載置被處理基板例如半導體晶圓之載置台或基座亦與電容耦合型電漿處理裝置相同，具有基板固持(夾持)功能、偏壓功能及溫度控制功能。 In a microwave discharge type plasma processing apparatus, particularly a plasma etching apparatus, a mounting table or a susceptor on which a substrate to be processed, such as a semiconductor wafer, is placed in a chamber is also the same as a capacitive coupling type plasma processing apparatus, and has a substrate holding (clip) Hold) function, bias function and temperature control function.

特別是為具有溫度控制功能於基座設置發熱體時，亦自設置於腔室外之加熱器電源經由加熱器供電線對基座內部發熱體供給例如交流頻率電力。此時，對基座高頻電極施加之一部分偏壓(離子導入)用高頻波亦易於經由發熱體進入加熱器供電線。因此，具有用來在加熱器供電線上使高頻雜訊衰減，或加以阻擋之濾波器。因此，於微波電漿處理裝置亦可直接適用依上述實施形態之濾波器單元54(IN)、54(OUT)之構成，及於基座12內部及正下方加熱器供電線100(1)、100(2)之迴繞構成。 In particular, when a heating element is provided on the susceptor with a temperature control function, the heater power supply provided outside the chamber is supplied with, for example, AC frequency power to the heating element inside the susceptor via the heater power supply line. At this time, a high-frequency wave for applying a partial bias (ion introduction) to the susceptor high-frequency electrode is also likely to enter the heater power supply line via the heat generating body. Therefore, there is a filter for attenuating or blocking high frequency noise on the heater supply line. Therefore, the configuration of the filter units 54 (IN) and 54 (OUT) according to the above embodiment can be directly applied to the microwave plasma processing apparatus, and the heater power supply line 100 (1) inside and below the susceptor 12, The rewinding of 100(2).

惟於微波電漿處理裝置，自頂棚上之天線經由介電質窗朝腔室內放射、用於產生電漿，通常為2.45GHz之一部分微波會通過電漿及基座進入濾波器單元54(IN)、54(OUT)。在此，若進入濾波器單元54(IN)、54(OUT)之微波往外洩漏，有時即會成為電波雜訊之原因。 However, in the microwave plasma processing apparatus, the antenna on the ceiling is radiated into the chamber through the dielectric window for generating plasma, and a portion of the microwave, which is usually 2.45 GHz, enters the filter unit 54 through the plasma and the pedestal (IN). ), 54 (OUT). Here, if the microwaves entering the filter units 54 (IN) and 54 (OUT) leak out, they may become the cause of the radio noise.

圖19A~圖19D顯示依本發明於微波電漿處理裝置在腔室10之底壁10a安裝濾波器單元54(IN)時可確實防止微波漏洩障礙之構成例。濾波器單元54(OUT)亦構成相同。 Figs. 19A to 19D show an example of a configuration for reliably preventing microwave leakage when the filter unit 54 (IN) is attached to the bottom wall 10a of the chamber 10 in the microwave plasma processing apparatus according to the present invention. Filter unit 54 (OUT) is also constructed identically.

圖19A所示之濾波器單元安裝構造中，於濾波器單元54(IN)之機殼110上部一體形成或結合導體例如鋁所構成之鍔狀凸緣200，此凸緣200之上表面密接基部或腔室底壁10a下表面。於腔室底壁10a，形成收納上部電連接器124之沉頭孔202，與使密封銷狀供電導體52(IN1)、52(IN2)之絕緣體之棒126通過之開口204。又，於機殼110側面，藉由衝孔加工形成宜具有3mm以下 直徑之氣冷用通氣孔110a。 In the filter unit mounting structure shown in FIG. 19A, a dome-shaped flange 200 formed of a conductor such as aluminum is integrally formed on the upper portion of the casing 110 of the filter unit 54 (IN), and the upper surface of the flange 200 is closely attached to the base. Or the lower surface of the chamber bottom wall 10a. A counterbore 202 for accommodating the upper electrical connector 124 and an opening 204 for passing the rod 126 of the insulator sealing the pin-shaped power supply conductors 52 (IN1) and 52 (IN2) are formed in the chamber bottom wall 10a. Moreover, on the side of the casing 110, it is preferably formed by punching to have a size of 3 mm or less. A vent hole 110a for air cooling.

此安裝構造中，在腔室底壁10a與濾波器單元54(IN)之間微波漏洩之間隙幾乎不存在，故可確實防止微波漏洩障礙。又，機殼110之通氣孔110a之直徑在3mm以下，故微波不自通氣孔110a漏洩。 In this mounting structure, the gap in which the microwave leaks between the chamber bottom wall 10a and the filter unit 54 (IN) hardly exists, so that the microwave leakage obstacle can be surely prevented. Further, since the diameter of the vent hole 110a of the casing 110 is 3 mm or less, the microwave does not leak from the vent hole 110a.

圖19B之濾波器單元安裝構造中，凸緣200自下嵌入形成於腔室底壁10a之沉頭孔202。此時，凸緣200中，不僅其上表面，於側面亦與腔室底壁10a密接。此安裝構造中，在腔室底壁10a與濾波器單元54(IN)之間微波漏洩之間隙亦幾乎不存在，故可確實防止微波漏洩障礙。且此安裝構造中，與機殼110一體形成或結合之凸緣200嵌入腔室底壁10a之沉頭孔202，藉此可限定濾波器端子T(1)、T(2)之位置，乃至於可使供電導體52(IN1)、52(IN2)相對於基座12側插座端子128(156)(圖7、圖15)定位。 In the filter unit mounting configuration of Fig. 19B, the flange 200 is submerged from the counterbore 202 formed in the bottom wall 10a of the chamber. At this time, not only the upper surface but also the side surface of the flange 200 is in close contact with the chamber bottom wall 10a. In this mounting structure, the gap in which the microwave leaks between the chamber bottom wall 10a and the filter unit 54 (IN) is hardly present, so that the microwave leakage obstacle can be surely prevented. In this mounting configuration, the flange 200 integrally formed or coupled with the casing 110 is embedded in the counterbore 202 of the bottom wall 10a of the chamber, thereby defining the positions of the filter terminals T(1), T(2), and even The power supply conductors 52 (IN1), 52 (IN2) can be positioned relative to the susceptor 12 side receptacle terminal 128 (156) (Figs. 7, 15).

圖19C~19E顯示如上述防止微波漏洩障礙之濾波器單元安裝構造中，於機殼110內保持分布常數線路105之特性阻抗於一定之構成例。 19C to 19E show a configuration example in which the characteristic impedance of the distributed constant line 105 is kept constant in the casing 110 in the filter unit mounting structure for preventing the microwave leakage.

如上述凸緣200之上表面密接基部或腔室底壁10a之下表面時(圖19A)，若線圈104(1)、104(2)之上端部於凸緣200之上突出，沿半徑方向與此突出之線圈部分對向之外導體即不僅係機殼110，亦為具有大於其之口徑之腔室底壁10a之沉頭孔202之內壁，因此分布常數線路(同軸線路)105之特性阻抗有時會紊亂。 When the upper surface of the flange 200 is in close contact with the lower surface of the base or the bottom wall 10a of the chamber (Fig. 19A), if the upper ends of the coils 104(1), 104(2) protrude above the flange 200, the radial direction The outer conductor opposite to the protruding coil portion is not only the casing 110 but also the inner wall of the counterbore hole 202 having the chamber bottom wall 10a larger than the diameter thereof, and thus the distributed constant line (coaxial line) 105 The characteristic impedance is sometimes turbulent.

在此，圖19C之構成例中，將中心部形成開口之導體例如鋁所構成之罩蓋型間隔物206***上部電連接器124、凸緣200與腔室底壁10a之沉頭孔202之間，此間隔物206內周面及凸緣200內周面與機殼110內周面對齊為同一面，使線圈104(1)、104(2)與外導體之距離間隔d自分布常數線路(同軸線路)105之一端至一端保持一定。且導體間隔物206亦用作為用來相對於基座12側插座端子128(158)(圖7、圖15)容易且正確地對準濾波器端子T(1)、T(2)及供電導體52(IN1)、52(IN2)之填隙片。 Here, in the configuration example of Fig. 19C, a cap type spacer 206 made of a conductor having an opening at the center portion, for example, aluminum, is inserted into the upper electrical connector 124, the flange 200, and the counterbore 202 of the chamber bottom wall 10a. The inner circumferential surface of the spacer 206 and the inner circumferential surface of the flange 200 are aligned with the inner circumferential surface of the casing 110 so that the distance between the coils 104(1), 104(2) and the outer conductor is d. One end to one end of the line (coaxial line) 105 is kept constant. And the conductor spacer 206 is also used to easily and correctly align the filter terminals T(1), T(2) and the power supply conductor with respect to the susceptor 12 side socket terminal 128 (158) (Fig. 7, Fig. 15). A shim of 52 (IN1), 52 (IN2).

圖19D之構成例不具有導體間隔物206，代之以形成腔室底壁10a之開口114為與機殼110之內徑相同之口徑，開口114內壁及凸緣200內周面與機殼110內周面對齊為同一面，保持線圈104(1)、104(2)與外導體之距離間隔d於一定。且為對準濾波器端子T(1)、T(2)及供電導體52(IN1)、52(IN2)，將嵌入腔室底壁10a之開口114，由絕緣體所構成之環狀或圓筒狀凸緣部208一體形成或結合於上部電連接器124側面。 The configuration of Fig. 19D does not have the conductor spacer 206. Instead, the opening 114 forming the bottom wall 10a of the chamber is the same diameter as the inner diameter of the casing 110, and the inner wall of the opening 114 and the inner circumferential surface of the flange 200 and the casing The inner circumferential surface of 110 is aligned to the same surface, and the distance d between the coils 104(1), 104(2) and the outer conductor is kept constant. And for aligning the filter terminals T(1), T(2) and the power supply conductors 52(IN1), 52(IN2), the opening 114 embedded in the bottom wall 10a of the chamber, the ring or the cylinder formed by the insulator The flange portion 208 is integrally formed or bonded to the side of the upper electrical connector 124.

圖19E之構成例中，機殼110側凸緣200嵌入腔室底壁10a之開口114或沉頭孔202時，凸緣200內周面與機殼110內周面對齊為同一面，與線圈104(1)、104(2)上端部對向。 In the configuration example of FIG. 19E, when the casing 110 side flange 200 is fitted into the opening 114 or the counterbore 202 of the chamber bottom wall 10a, the inner circumferential surface of the flange 200 is aligned with the inner circumferential surface of the casing 110, and The upper ends of the coils 104(1), 104(2) are opposed to each other.

本案發明人以電磁場計算之模擬驗證於濾波器單元54(IN)有間隙時之微波漏洩現象。此模擬中，不設置腔室底壁10a之開口114，代之以將鋁所構成之圓筒狀殼體210連接於機殼110上端。在此，於殼體210下端與機殼110上端之間，如圖20A所示以完全不設置間隙之構成為一實施例，如圖20B所示以設置間隙G之構成為比較例。此間隙G之尺寸為縱(高度)8mm，橫(寬)60mm。 The inventors of the present invention verified the microwave leakage phenomenon when the filter unit 54 (IN) has a gap by the simulation of the electromagnetic field calculation. In this simulation, the opening 114 of the chamber bottom wall 10a is not provided, and instead, the cylindrical casing 210 made of aluminum is attached to the upper end of the casing 110. Here, between the lower end of the casing 210 and the upper end of the casing 110, as shown in FIG. 20A, a configuration in which no gap is provided at all is taken as an embodiment, and a configuration in which the gap G is provided as shown in FIG. 20B is a comparative example. The size of this gap G is 8 mm in longitudinal (height) and 60 mm in width (width).

藉由電磁場計算求取2.45GHz之微波自上方進入濾波器單元54(IN)中時機殼110內部及周圍之電場分布時，於實施例(圖20A)中，如圖21A所示完全無微波漏洩。且於機殼110之通氣孔(衝孔金屬)110a亦無漏洩。另一方面，比較例(圖20B)中，如圖21B所示可清楚確認微波大量自上述間隙G漏洩。 When the electric field distribution of 2.45 GHz microwaves enters the filter unit 54 (IN) from above into the filter unit 54 (IN) by the electromagnetic field calculation, in the embodiment (Fig. 20A), there is no microwave as shown in Fig. 21A. Leaked. Moreover, the vent hole (punching metal) 110a of the casing 110 is also leak-free. On the other hand, in the comparative example (Fig. 20B), as shown in Fig. 21B, it can be clearly confirmed that a large amount of microwaves leaked from the gap G described above.

又，本案發明人藉由與上述相同之電磁場計算，求取上述實施例(圖20A)及比較例(圖20B)之濾波器單元安裝構造中，就100MHz之高頻而言電磁場是否亦漏洩。其結果，雖已省略圖示，但於上述實施例(圖20A)中當然無電磁場之漏洩，於比較例(圖20B)亦完全無電磁場之漏洩。 Further, the inventors of the present invention calculated the electromagnetic field of the above-described embodiment (Fig. 20A) and the comparative example (Fig. 20B) by the same electromagnetic field calculation as described above, and whether or not the electromagnetic field leaks at a high frequency of 100 MHz. As a result, although the illustration is omitted, in the above embodiment (Fig. 20A), of course, there is no leakage of the electromagnetic field, and in the comparative example (Fig. 20B), there is no leakage of the electromagnetic field at all.

一般而言，通常來說電磁波(行進波)逼近導體開口部分時，電磁波半波長若小於開口部分之最大開口寬，電磁波即無法通過該開口部分。上述比較例(圖20B)之情形下，微波(2.45GHz)半波長為61mm，相對於此，形成於濾波器單元54(IN)上端部之間隙G之尺寸為8mm×60mm，故依上述之通常說法2.45GHz之微波可勉強通過間隙G，上述模擬結果亦大致與其符合。 In general, when electromagnetic waves (traveling waves) approach the opening portion of the conductor, the electromagnetic wave half-wavelength is smaller than the maximum opening width of the opening portion, and electromagnetic waves cannot pass through the opening portion. In the case of the above comparative example (Fig. 20B), the half wavelength of the microwave (2.45 GHz) is 61 mm. On the other hand, the size of the gap G formed at the upper end portion of the filter unit 54 (IN) is 8 mm × 60 mm, so It is generally said that the microwave of 2.45 GHz can barely pass the gap G, and the above simulation results are roughly in accordance with it.

因此，因濾波器單元54(IN)側及/或腔室10側之設計情事，不得已於濾波器單元54(IN)與腔室10之間形成間隙時，依上述通常說法，只要抑制該間隙最大開口寬在微波半波長之約一半以下(約30mm以下)，即可防止微波漏洩。 Therefore, due to the design of the filter unit 54 (IN) side and/or the chamber 10 side, it is necessary to form a gap between the filter unit 54 (IN) and the chamber 10, as long as the gap is suppressed as described above. The maximum opening width is less than about half of the microwave half-wavelength (about 30 mm or less) to prevent microwave leakage.

本案發明人亦進行用來確認此點之模擬。亦即，作為比照上述比較例(圖20B)而有間隙之安裝構造，於殼體210與機殼110之間設置圓孔(開口)g，選擇此圓孔g之口徑於13mm、17mm、23mm、27mm、35mm5階段，就各場合藉由電磁場計算求取2.45GHz之微波自上方進入濾波器單元54(IN)中時機殼110內部及周圍之電場分布。圖22A~圖22E顯示其模擬結果。 The inventor of the present invention also conducted a simulation to confirm this point. That is, as a mounting structure having a gap in comparison with the above comparative example (Fig. 20B), a circular hole (opening) g is provided between the casing 210 and the casing 110, and the diameter of the circular hole g is selected to be 13 mm, 17 mm, and 23 mm. In the 27mm and 35mm5 stages, the electric field distribution of the inside and outside of the casing 110 when the microwave of 2.45 GHz enters the filter unit 54 (IN) from above is calculated by electromagnetic field calculation. 22A to 22E show the simulation results thereof.

如圖22A所示，即使圓孔g之口徑為13mm亦有約數V/m之漏洩。又，已知隨著圓孔g之口徑增大為17mm、23mm、27mm電場(微波)之漏洩量增加(圖22B、圖22C、圖22D)，於35mm口徑時發生100V/m以上之漏洩(圖22E)。 As shown in Fig. 22A, even if the diameter of the circular hole g is 13 mm, there is a leak of about several V/m. Further, it is known that as the diameter of the circular hole g increases, the leakage amount of the electric field (microwave) of 17 mm, 23 mm, and 27 mm increases (FIG. 22B, FIG. 22C, and FIG. 22D), and leakage of 100 V/m or more occurs at a diameter of 35 mm ( Figure 22E).

由上述模擬可知，適用本發明之微波電漿處理裝置中，為確實保證可防止於濾波器單元54(IN)安裝構造周圍微波之漏洩，形成於濾波器單元54(IN)與腔室10之間之間隙中，其最大開口寬約為微波半波長(約60mm)時當然不充分，為半波長之約一半(約30mm)時亦尚不充分，需為半波長之數十分之1以下(約3mm以下)。 As is apparent from the above simulation, in the microwave plasma processing apparatus to which the present invention is applied, it is surely prevented from leaking around the microwaves in the filter unit 54 (IN) mounting structure, and is formed in the filter unit 54 (IN) and the chamber 10. In the gap between the gaps, the maximum opening width is about half the wavelength of the microwave (about 60 mm), and is not sufficient for about half of the half wavelength (about 30 mm), and the number of half wavelengths is less than one tenth. (about 3mm or less).

h1A‧‧‧第1端子 h 1A ‧‧‧1st terminal

h2A‧‧‧第2端子 h 2A ‧‧‧2nd terminal

50‧‧‧發熱體 50‧‧‧heating body

50(IN)‧‧‧內側發熱線 50 (IN) ‧ ‧ inner heating line

50(OUT)‧‧‧外側發熱線 50 (OUT) ‧‧‧ outside heating line

Claims (22)

一種電漿處理裝置，包含：處理容器，進行電漿處理；載置台，於該處理容器內隔著空間配置在板狀之導電性基部之上，載置並固持被處理基板；高頻電極，設於該載置台；高頻供電部，用來對該高頻電極施加一定頻率的高頻波；發熱體，設於該載置台；加熱器供電線，用來使該發熱體電性連接在配置於該處理容器外之加熱器電源；及濾波器單元，包含：線圈，用來使經由該發熱體進入該加熱器供電線之高頻雜訊衰減，或加以阻擋；與機殼，收納該線圈；且將該濾波器單元配置成：於該載置台正下方，使該機殼上端與該基部之上表面高度相同，或低於該基部之上表面，於該基部，形成以非接觸之方式使該加熱器供電線通過之開口，該加熱器供電線包含銷狀或棒狀的第1導體，自位於該基部之該開口之內側或下方的該線圈之第1端子到該載置台之下表面，穿過該空間延伸。 A plasma processing apparatus comprising: a processing container for performing plasma processing; and a mounting table in which a space is placed on a plate-shaped conductive base via a space, and the substrate to be processed is placed and held; and the high frequency electrode is The high-frequency power supply unit is configured to apply a high-frequency wave of a certain frequency to the high-frequency electrode; the heat generating body is disposed on the mounting table; and the heater power supply line is configured to electrically connect the heat generating body to the mounting stage. a heater power supply outside the processing container; and a filter unit comprising: a coil for attenuating or blocking high frequency noise entering the heater power supply line through the heating element; and housing the housing with the casing; And configuring the filter unit such that the upper end of the casing is at the same height as the upper surface of the base or lower than the upper surface of the base, and the base is formed in a non-contact manner. An opening through which the heater power supply line includes a pin-shaped or rod-shaped first conductor, from the first terminal of the coil located below or below the opening of the base to the lower surface of the mounting table , Extending through the space. 如申請專利範圍第1項之電漿處理裝置，其中該第1導體於該空間內或該開口內不彎曲而筆直延伸。 The plasma processing apparatus of claim 1, wherein the first conductor extends straight in the space or in the opening without bending. 如申請專利範圍第2項之電漿處理裝置，其中該第1導體於該空間內或該開口內沿鉛直方向筆直延伸。 The plasma processing apparatus of claim 2, wherein the first conductor extends straight in the vertical direction in the space or in the opening. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中將該第1導體封入絕緣體之棒中，該絕緣體之棒不接觸該基部之該開口的內側面。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the first conductor is sealed in a rod of the insulator, the rod of the insulator not contacting the inner side surface of the opening of the base. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該線圈之第1端子露出。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the first terminal of the coil is exposed. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該線圈之第1端子之上表面與該基部之上表面的高度相同。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the upper surface of the first terminal of the coil is the same as the height of the upper surface of the base. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該線圈之第1端子之上表面未被遮蔽而以開放狀態與該空間對向。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the upper surface of the first terminal of the coil is not shielded and faces the space in an open state. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該加熱器供電線包含：插座端子，為將該第1導體之上端部***而設於該載置台的下表面；及銷狀、棒狀或板狀的第2導體，為電性連接該插座端子與該發熱體端子而在該載置台之中延伸。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the heater power supply line includes: a socket terminal, and is disposed on a lower surface of the mounting base for inserting an upper end portion of the first conductor; And a second conductor of a pin shape, a rod shape or a plate shape is electrically connected to the socket terminal and the heat generating body terminal and extends in the mounting table. 如申請專利範圍第8項之電漿處理裝置，其中該線圈之第1端子及該插座端子，位於較該發熱體端子更靠近該處理容器中心之位置。 The plasma processing apparatus of claim 8, wherein the first terminal of the coil and the socket terminal are located closer to a center of the processing container than the heating element terminal. 如申請專利範圍第8項之電漿處理裝置，其中該載置台包含導體之背板，該導體之背板的上表面接合於該高頻電極之下表面，且該導體之背板的下表面面對該空間，該第2導體具有於埋入該背板之絕緣體中沿水平方向延伸之區間。 The plasma processing apparatus of claim 8, wherein the mounting table comprises a backing plate of a conductor, an upper surface of the backing plate of the conductor is bonded to a lower surface of the high frequency electrode, and a lower surface of the backing plate of the conductor Facing this space, the second conductor has a section extending in the horizontal direction in the insulator buried in the backing plate. 如申請專利範圍第8項之電漿處理裝置，其中該載置台包含絕緣體之背板，該絕緣體之背板的上表面接合於該高頻電極之下表面，而該絕緣體之背板的下表面面對該空間，該第2導體具有在形成於該高頻電極的下表面之溝槽中沿水平方向延伸之區間。 The plasma processing apparatus of claim 8, wherein the mounting table comprises an insulator backing plate, an upper surface of the backing plate of the insulator is bonded to a lower surface of the high frequency electrode, and a lower surface of the backing plate of the insulator Facing this space, the second conductor has a section extending in the horizontal direction in the groove formed on the lower surface of the high-frequency electrode. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該載置台具有靜電吸盤，該靜電吸盤包含：介電質層，該介電質層的下表面接合於該高頻電極之上表面，而該介電質層的上表面形成載置該基板之載置面；及DC電極，設於該介電質層中，為吸附該基板而被施加高壓之直流電壓。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the mounting table has an electrostatic chuck, the electrostatic chuck comprising: a dielectric layer, the lower surface of the dielectric layer being bonded to the high frequency An upper surface of the electrode, the upper surface of the dielectric layer forms a mounting surface on which the substrate is placed, and a DC electrode is disposed in the dielectric layer to apply a high-voltage DC voltage to the substrate. 如申請專利範圍第12項之電漿處理裝置，其中該發熱體在低於該DC電極之位置被設在該絕緣層中。 A plasma processing apparatus according to claim 12, wherein the heat generating body is disposed in the insulating layer at a position lower than the DC electrode. 如申請專利範圍第12項之電漿處理裝置，其中將該發熱體設置在被包夾於該絕緣層與該高頻電極之間的絕緣體之薄片中。 A plasma processing apparatus according to claim 12, wherein the heat generating body is disposed in a sheet of an insulator sandwiched between the insulating layer and the high frequency electrode. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中隔著介電質所構成之筒狀支持構件將該載置台設在該基部上。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the mounting base is provided on the base by a cylindrical supporting member formed of a dielectric material. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中 該基部形成該處理容器之底壁。 A plasma processing apparatus according to any one of claims 1 to 3, wherein The base forms the bottom wall of the processing vessel. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該基部可於該處理容器之底壁上方朝上下移動或位移，該濾波器單元配置在該基部與該處理容器的底壁之間。 The plasma processing apparatus of any one of claims 1 to 3, wherein the base is movable up or down above a bottom wall of the processing container, the filter unit being disposed at the base and the processing container Between the bottom walls. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該基部電性接地。 A plasma processing apparatus according to any one of claims 1 to 3, wherein the base is electrically grounded. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該濾波器單元之機殼係由導體構成，並電性接地。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the casing of the filter unit is made of a conductor and electrically grounded. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該高頻波主要協助於該處理容器內產生處理氣體之電漿。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the high frequency wave mainly assists in generating a plasma of a processing gas in the processing container. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該高頻波主要協助將離子自該電漿導入至載置於該載置台上之該基板。 A plasma processing apparatus according to any one of claims 1 to 3, wherein the high frequency wave mainly assists in introducing ions from the plasma into the substrate placed on the mounting table. 如申請專利範圍第1至3項中任一項之電漿處理裝置，其中該濾波器單元包含電性連接在該線圈之第2端子與接地電位構件之間的電容器。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the filter unit comprises a capacitor electrically connected between the second terminal of the coil and the ground potential member.
TW102136389A 2012-10-19 2013-10-08 Plasma treatment device TWI621172B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012-231551 2012-10-19
JP2012231551 2012-10-19
JP2013-107194 2013-05-21
JP2013107194A JP6081292B2 (en) 2012-10-19 2013-05-21 Plasma processing equipment

Publications (2)

Publication Number Publication Date
TW201421577A true TW201421577A (en) 2014-06-01
TWI621172B TWI621172B (en) 2018-04-11

Family

ID=50941335

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102136389A TWI621172B (en) 2012-10-19 2013-10-08 Plasma treatment device

Country Status (2)

Country Link
JP (1) JP6081292B2 (en)
TW (1) TWI621172B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552262B (en) * 2014-08-27 2016-10-01 Els System Technology Co Ltd Bearing device
TWI614791B (en) * 2015-07-23 2018-02-11 Hitachi High Tech Corp Plasma processing device
US10897808B2 (en) 2016-11-11 2021-01-19 Tokyo Electron Limited Filter device and plasma processing apparatus
TWI738250B (en) * 2019-05-14 2021-09-01 大陸商北京北方華創微電子裝備有限公司 Charge transferring device and associated plasma system
TWI791541B (en) * 2017-06-21 2023-02-11 日商東京威力科創股份有限公司 Plasma treatment device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102360248B1 (en) * 2016-05-10 2022-02-07 램 리써치 코포레이션 Laminated heater with different heater trace materials
JP6698502B2 (en) * 2016-11-21 2020-05-27 東京エレクトロン株式会社 Mounting table and plasma processing device
JP6850137B2 (en) * 2017-01-24 2021-03-31 日本特殊陶業株式会社 Holding device
JP7029340B2 (en) 2017-04-25 2022-03-03 東京エレクトロン株式会社 Filter device and plasma processing device
JP6865128B2 (en) 2017-07-19 2021-04-28 東京エレクトロン株式会社 Plasma processing equipment
WO2019124119A1 (en) * 2017-12-21 2019-06-27 東京エレクトロン株式会社 Substrate support member, substrate processing apparatus and substrate transport apparatus
US11456160B2 (en) 2018-03-26 2022-09-27 Tokyo Electron Limited Plasma processing apparatus
JP7208819B2 (en) 2018-03-26 2023-01-19 東京エレクトロン株式会社 Plasma processing equipment
JP7061511B2 (en) * 2018-05-10 2022-04-28 東京エレクトロン株式会社 Filter device and plasma processing device
TW202013581A (en) * 2018-05-23 2020-04-01 日商東京威力科創股份有限公司 Plasma treatment device
KR20220061617A (en) * 2020-11-06 2022-05-13 세메스 주식회사 Apparatus for treating substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221033A (en) * 1994-02-07 1995-08-18 Matsushita Electric Ind Co Ltd Plasma processing device
JPH08264465A (en) * 1995-03-23 1996-10-11 Tokyo Electron Ltd Processing apparatus
JP2000286239A (en) * 1999-03-30 2000-10-13 Rohm Co Ltd Plasma surface treating apparatus for semiconductor substrate
JP4672113B2 (en) * 2000-07-07 2011-04-20 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
JP5042661B2 (en) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 Plasma processing apparatus and filter unit
JP5643062B2 (en) * 2009-11-24 2014-12-17 東京エレクトロン株式会社 Plasma processing equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552262B (en) * 2014-08-27 2016-10-01 Els System Technology Co Ltd Bearing device
TWI614791B (en) * 2015-07-23 2018-02-11 Hitachi High Tech Corp Plasma processing device
US10897808B2 (en) 2016-11-11 2021-01-19 Tokyo Electron Limited Filter device and plasma processing apparatus
TWI742187B (en) * 2016-11-11 2021-10-11 日商東京威力科創股份有限公司 Filter device and plasma processing device
TWI791541B (en) * 2017-06-21 2023-02-11 日商東京威力科創股份有限公司 Plasma treatment device
TWI738250B (en) * 2019-05-14 2021-09-01 大陸商北京北方華創微電子裝備有限公司 Charge transferring device and associated plasma system

Also Published As

Publication number Publication date
JP6081292B2 (en) 2017-02-15
JP2014099585A (en) 2014-05-29
TWI621172B (en) 2018-04-11

Similar Documents

Publication Publication Date Title
TW201421577A (en) Plasma treatment device
US10332728B2 (en) Plasma processing apparatus
US11501958B2 (en) Plasma processing apparatus
KR102580823B1 (en) Plasma processing apparatus
TWI674615B (en) Plasma processing device
TWI472267B (en) Plasma processing device
KR102121655B1 (en) Plasma processing apparatus
JP5643062B2 (en) Plasma processing equipment
US10074519B2 (en) Plasma processing apparatus and filter unit
JP4904202B2 (en) Plasma reactor
TWI390578B (en) Plasma source with discharge inducing bridge and plasma processing system using the same
KR102177576B1 (en) Plasma treatment device and filter unit
US20150243486A1 (en) Plasma processing apparatus
KR102070471B1 (en) Plasma processing device and filter unit
TWI616947B (en) Plasma processing device
KR101496847B1 (en) Inductively coupled plasma reactor
KR100806522B1 (en) Inductively coupled plasma reactor
KR101020075B1 (en) Inductively coupled plasma reactor
TW202004831A (en) Plasma treatment apparatus
KR101058832B1 (en) Antenna Structure of Substrate Processing Equipment Using Plasma
KR101496840B1 (en) Plasma reactor apparatus having magnetism control constitution
KR101039232B1 (en) High-density plasma generation apparatus
JP2016046357A (en) Plasma processing device