TW201417434A - Over current protection circuit - Google Patents
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Abstract
Description
本發明有關於一種保護電路,特別是有關於一種過電流保護電路。 The present invention relates to a protection circuit, and more particularly to an overcurrent protection circuit.
電子裝置於啟動、或負載電路變動時所產生之過電流,不僅影響整個電子裝置之正常工作,甚至會導致整個系統的損害。因此,需於電子裝置中設計適當之過電流保護電路,利用限制電流以防止過電流損壞整個系統,且限制電流亦可有助於減少供電電源之大小。習知上,可利用誤差放大器於開關電源輸入端偵測負載電流是否過大,依據該偵測結果,產生系統所需之過電流控制訊號,來控制輸入至負載之電流。 The overcurrent generated by the electronic device during startup or when the load circuit changes not only affects the normal operation of the entire electronic device, but may even cause damage to the entire system. Therefore, it is necessary to design an appropriate overcurrent protection circuit in the electronic device, to limit the current to prevent the overcurrent from damaging the entire system, and limiting the current can also help to reduce the size of the power supply. Conventionally, the error amplifier can be used to detect whether the load current is too large at the input end of the switching power supply, and according to the detection result, an overcurrent control signal required by the system is generated to control the current input to the load.
第1圖繪示一習知過電流保護電路之概略圖示,其中此過電流保護電路100係耦接於一電源輸入端Vin和一負載101之間用以控制一開關104。過電流保護電路100包括一電流偵測電路103和一個控制單元106。開關以N型電晶體104實現。供電路徑105上之電流I大小會隨著負載101的不同而變動,當電流偵測電路103偵測到供電路徑105之電流I在一限定值下時,控制單元106會將N型電晶體104設定為完全導通的狀態,亦即控制N型電晶體104的閘極電壓為高位準狀態。N型電晶體104的電流大小與其閘極和源極之間的壓差有關。因此,一旦電流偵測電路103偵測到供電路徑105發生過電流狀況,控制單元 106會藉由降低N型電晶體104的閘極電壓來降低其閘極和源極之間的壓差,進而限制能透過N型電晶體104傳送至負載101的電流大小。 FIG. 1 is a schematic diagram of a conventional overcurrent protection circuit 100. The overcurrent protection circuit 100 is coupled between a power input terminal Vin and a load 101 for controlling a switch 104. The overcurrent protection circuit 100 includes a current detection circuit 103 and a control unit 106. The switch is implemented as an N-type transistor 104. The magnitude of the current I on the power supply path 105 varies with the load 101. When the current detecting circuit 103 detects that the current I of the power supply path 105 is at a limited value, the control unit 106 will pass the N-type transistor 104. The state is set to be fully turned on, that is, the gate voltage of the N-type transistor 104 is controlled to a high level state. The magnitude of the current of the N-type transistor 104 is related to the voltage difference between its gate and source. Therefore, once the current detecting circuit 103 detects an overcurrent condition of the power supply path 105, the control unit 106 reduces the voltage difference between the gate and the source by lowering the gate voltage of the N-type transistor 104, thereby limiting the amount of current that can be transmitted through the N-type transistor 104 to the load 101.
本發明之一目的在於提供一種有效而穩定的過電流保護電路。 It is an object of the present invention to provide an effective and stable overcurrent protection circuit.
根據本發明之一態樣係在提供一種過電流保護電路。此過電流保護電路係耦接在一開關之輸出端和一負載間之電流路徑上。此過電流保護電路包括一第一過電流偵測單元、一第二過電流偵測單元以及一控制單元。第一過電流偵測單元,耦接電流路徑與一第一電壓間,用以根據電流路徑上之電流輸出一第一控制信號。第二過電流偵測單元,耦接該電流路徑與一第二電壓間,用以根據電流路徑上之電流輸出一第二控制信號。控制單元,耦接第一過電流偵測單元和第二過電流偵測單元,根據第一控制信號或第二控制信號控制開關以減少電流路徑上之電流。 According to an aspect of the present invention, an overcurrent protection circuit is provided. The overcurrent protection circuit is coupled to the current path between the output of a switch and a load. The overcurrent protection circuit includes a first overcurrent detection unit, a second overcurrent detection unit, and a control unit. The first overcurrent detecting unit is coupled between the current path and a first voltage for outputting a first control signal according to the current on the current path. The second overcurrent detecting unit is coupled between the current path and a second voltage for outputting a second control signal according to the current on the current path. The control unit is coupled to the first overcurrent detecting unit and the second overcurrent detecting unit, and controls the switch according to the first control signal or the second control signal to reduce the current on the current path.
在一實施例中,此開關為一電晶體,此電晶體之汲極端耦接一電源輸入端,此電晶體之源極端耦接此電流路徑。 In one embodiment, the switch is a transistor, and the transistor is coupled to a power input terminal, and the source terminal of the transistor is coupled to the current path.
在一實施例中,控制單元更具有:一閘極電壓供應電路、一第一N型電晶體以及一第二N型電晶體,其中第一N型電晶體之汲極端耦接電晶體之閘極端,第一N型電晶體之閘極端接收第一控制信號,第二N型電晶體之汲極端耦接電晶體之閘極端,第二N型電晶體之閘極端接收第二控制信號。 In an embodiment, the control unit further includes: a gate voltage supply circuit, a first N-type transistor, and a second N-type transistor, wherein the first N-type transistor is coupled to the gate of the transistor Extremely, the gate terminal of the first N-type transistor receives the first control signal, the second terminal of the second N-type transistor is coupled to the gate terminal of the transistor, and the gate terminal of the second N-type transistor receives the second control signal.
在一實施例中,第一過電流偵測單元,更包括:一第一放大器、一第三N型電晶體、一第一電阻以及一第二電阻。其中,第一放大器具有一正端、一負端以及一輸出端;第一放大器之正端與負端根據該電流路徑上之電流方向依序耦接至該電流路徑,第三N型電晶體之閘極端耦接第一放大器之輸出端,第三N型電晶體之汲極端耦接第一放大器之正端;第一電阻將第一放大器之正端耦接至該電流路徑;第三N型電晶體之源極端透過該第二電阻耦接該第一電壓,其中當一電流流經第二電阻時會產生第一控制信號。 In one embodiment, the first overcurrent detecting unit further includes: a first amplifier, a third N-type transistor, a first resistor, and a second resistor. The first amplifier has a positive terminal, a negative terminal and an output terminal; the positive terminal and the negative terminal of the first amplifier are sequentially coupled to the current path according to the current direction on the current path, and the third N-type transistor The gate is coupled to the output of the first amplifier, and the third N-type transistor is coupled to the positive terminal of the first amplifier; the first resistor couples the positive terminal of the first amplifier to the current path; The source terminal of the type transistor is coupled to the first voltage through the second resistor, wherein a first control signal is generated when a current flows through the second resistor.
在一實施例中,第二過電流偵測單元,更包括:一第二放大器、一第一P型電晶體、一第二P型電晶體、一第三電阻以及一第四電阻。其中第二放大器具有一正端、一負端以及一輸出端,第二放大器之負端與正端根據該電流路徑上之電流方向依序耦接至該電流路徑;第一P型電晶體之閘極端耦接第二放大器之輸出端,第一P型電晶體之汲極端耦接第一放大器之該正端,第一P型電晶體之源極端耦接第二電壓;第二P型電晶體與第一P型電晶體形成一電流鏡電路,其中第二P型電晶體之閘極端耦接第二放大器之輸出端,第二P型電晶體之源極端耦接該第二電壓;第三電阻將該第二放大器之正端耦接至該電流路徑;第二P型電晶體之汲極端耦接該第四電阻,其中當一電流流經該第四電阻時會產生該第二控制信號。 In one embodiment, the second overcurrent detecting unit further includes: a second amplifier, a first P-type transistor, a second P-type transistor, a third resistor, and a fourth resistor. The second amplifier has a positive terminal, a negative terminal and an output terminal, and the negative terminal and the positive terminal of the second amplifier are sequentially coupled to the current path according to the current direction on the current path; the first P-type transistor The gate terminal is coupled to the output end of the second amplifier, the first terminal of the first P-type transistor is coupled to the positive terminal of the first amplifier, and the source terminal of the first P-type transistor is coupled to the second voltage; the second P-type battery Forming a current mirror circuit with the first P-type transistor, wherein a gate terminal of the second P-type transistor is coupled to an output terminal of the second amplifier, and a source terminal of the second P-type transistor is coupled to the second voltage; a third resistor coupling the positive terminal of the second amplifier to the current path; a second terminal of the second P-type transistor is coupled to the fourth resistor, wherein the second control is generated when a current flows through the fourth resistor signal.
在一實施例中,當電流路徑產生一過電流時,第三N型電晶體根據該過電流於該第三N型電晶體之源極端輸出一第一電流。當該第一電流流經該第二電阻時產生該第一 控制信號,以導通該第一N型電晶體改變該開關之閘極電壓,減少該電流路徑上之電流。 In one embodiment, when the current path generates an overcurrent, the third N-type transistor outputs a first current according to the overcurrent at the source terminal of the third N-type transistor. Generating the first current when the first current flows through the second resistor And controlling a signal to turn on the first N-type transistor to change a gate voltage of the switch to reduce a current on the current path.
在一實施例中,當電流路徑產生一過電流時,根據該過電流,第一P型電晶體透過該電流鏡結構於第二P型電晶體之汲極輸出一第二電流。第二電流流經該第四電阻時產生該第二控制信號,以導通該第二N型電晶體改變該開關之閘極電壓,減少該電流路徑上之電流。 In one embodiment, when the current path generates an overcurrent, according to the overcurrent, the first P-type transistor outputs a second current through the current mirror structure at the drain of the second P-type transistor. The second current flows through the fourth resistor to generate the second control signal to turn on the second N-type transistor to change the gate voltage of the switch to reduce the current on the current path.
綜合上述所言,本發明於連接負載之電流路徑上耦接至少一第一過電流偵測單元以及一第二過電流偵測單元來提供過電流保護。藉由對第一過電流偵測單元以及第二過電流偵測單元操作電壓之設定,可決定此兩過電流偵測單元之啟動時機以及保護範圍,來提供更周延之保護。 In summary, the present invention couples at least one first overcurrent detecting unit and a second overcurrent detecting unit to the current path connected to the load to provide overcurrent protection. By setting the operating voltages of the first overcurrent detecting unit and the second overcurrent detecting unit, the starting timing and protection range of the two overcurrent detecting units can be determined to provide more comprehensive protection.
以下為本發明較佳具體實施例以所附圖示加以詳細說明,下列之說明及圖示使用相同之參考數字以表示相同或類似元件,並且在重複描述相同或類似元件時則予省略。 The following description of the preferred embodiments of the invention is in the
第2圖所示係根據本發明一實施方式之過電流保護電路之概略圖示。其中本發明之過電流保護電路200係耦接於一開關204之輸出端和一負載端211之間。過電流保護電路200包括:一第一過電流偵測單元201、一第二過電流偵測單元202和一控制單元203。在下述實施例中,開關204是以N型電晶體來實現,藉以說明本發明之應用,然而,在其他之實施例中,開關亦可以P型電晶體來實現。開關204之汲極端耦接於電源輸入端210,用以接收一輸 入電壓Vin,源極端則耦接一電流路徑205用以提供一輸出電壓Vout至負載端211以供電給一負載212。第一過電流偵測單元201耦接於電流路徑205,用以輸出對應於流經該電流路徑205電流之一第一信號S1。第二過電流偵測單元202亦耦接於電流路徑205,用以輸出對應於流經該電流路徑205電流之一第二信號S2。控制單元203係耦接於該第一過電流偵測單元201以及第二過電流偵測單元202,當接收到該第一信號S1或第二信號S2時,會輸出一控制信號至開關204之閘極端,用以驅動開關204,以減少流經電流路徑205之電流,達到過電流保護之目的。 Fig. 2 is a schematic illustration of an overcurrent protection circuit in accordance with an embodiment of the present invention. The overcurrent protection circuit 200 of the present invention is coupled between the output end of a switch 204 and a load end 211. The overcurrent protection circuit 200 includes a first overcurrent detection unit 201, a second overcurrent detection unit 202, and a control unit 203. In the following embodiments, the switch 204 is implemented as an N-type transistor to illustrate the application of the present invention. However, in other embodiments, the switch can also be implemented as a P-type transistor. The switch 204 is coupled to the power input terminal 210 for receiving an input. The input voltage Vin is coupled to a current path 205 for providing an output voltage Vout to the load terminal 211 for supplying power to a load 212. The first overcurrent detecting unit 201 is coupled to the current path 205 for outputting a first signal S1 corresponding to one of the currents flowing through the current path 205. The second overcurrent detecting unit 202 is also coupled to the current path 205 for outputting a second signal S2 corresponding to one of the currents flowing through the current path 205. The control unit 203 is coupled to the first overcurrent detecting unit 201 and the second overcurrent detecting unit 202. When the first signal S1 or the second signal S2 is received, a control signal is outputted to the switch 204. The gate terminal is used to drive the switch 204 to reduce the current flowing through the current path 205 for overcurrent protection.
第3圖所示係根據本發明一實施方式之過電流保護電路之電路圖。根據本發明,控制單元303包括一第一N型電晶體3031、一第二N型電晶體3032和一閘極電壓供應電路3033,當電流路徑305未發生過電流時,開關304由閘極電壓供應電路3033提供電壓來控制開關304傳送至電流路徑305的電流大小。反之,當電流路徑305發生過電流時,則由第一過電流偵測單元301產生第一信號S1,或第二過電流偵測單元302產生第二信號S2,來分別控制第一N型電晶體3031或第二N型電晶體3032導通,藉以驅動開關304降低流經電流路徑305之電流,達到過電流保護之目的,其中第一過電流偵測單元301和第二過電流偵測單元302之操作方式如下所述。 Fig. 3 is a circuit diagram of an overcurrent protection circuit according to an embodiment of the present invention. According to the present invention, the control unit 303 includes a first N-type transistor 3031, a second N-type transistor 3032, and a gate voltage supply circuit 3033. When the current path 305 does not have an overcurrent, the switch 304 is controlled by the gate voltage. Supply circuit 3033 provides a voltage to control the amount of current that switch 304 transmits to current path 305. Conversely, when an overcurrent occurs in the current path 305, the first overcurrent detecting unit 301 generates the first signal S1, or the second overcurrent detecting unit 302 generates the second signal S2 to respectively control the first N type The crystal 3031 or the second N-type transistor 3032 is turned on, so as to drive the switch 304 to reduce the current flowing through the current path 305 to achieve the purpose of overcurrent protection, wherein the first overcurrent detecting unit 301 and the second overcurrent detecting unit 302 The mode of operation is as follows.
第一過電流偵測單元301包括:一第一放大器3011、一第一電阻3012、一第三N型電晶體3013以及一第二電阻3014。其中,第一放大器3011、第一電阻3012、第三N 型電晶體3013以及第二電阻3014形成一負回授關係,第一過電流偵測單元301即係利用此整體負回授之特性,將第一放大器3011之正端及負端拉至等電位。其中,第一放大器3011之輸出端耦接第三N型電晶體3013之閘極,而第一放大器3011之正端與負端均耦接至電流路徑305,且,第一放大器3011是根據電流I1方向依序將正端與負端耦接至電流路徑305。而第三N型電晶體3013之源極透過電阻3014耦接至電壓Vss,第三N型電晶體3013之汲極耦接至第一放大器3011之正端。 The first overcurrent detecting unit 301 includes a first amplifier 3011, a first resistor 3012, a third N-type transistor 3013, and a second resistor 3014. Wherein, the first amplifier 3011, the first resistor 3012, and the third N The transistor 3013 and the second resistor 3014 form a negative feedback relationship, and the first overcurrent detecting unit 301 pulls the positive and negative terminals of the first amplifier 3011 to the equipotential by utilizing the characteristics of the overall negative feedback. . The output of the first amplifier 3011 is coupled to the gate of the third N-type transistor 3013, and the positive and negative terminals of the first amplifier 3011 are coupled to the current path 305, and the first amplifier 3011 is based on the current. The I1 direction sequentially couples the positive and negative terminals to the current path 305. The source of the third N-type transistor 3013 is coupled to the voltage Vss through the resistor 3014, and the drain of the third N-type transistor 3013 is coupled to the positive terminal of the first amplifier 3011.
在一實施例中,電流路徑305具有一路徑電阻Rs,且流經路徑電阻Rs和第一電阻3012之電流分別為電流I1及電流I2,則電流I1和電流I2之大小會與路徑電阻Rs和第一電阻3012之比例有關。當電流路徑305發生電流增加時,亦即流經路徑電阻Rs之電流I1提高,因為負回授之特性,電流I2亦相對地提高。且由於第一放大器3011之正端與負端是根據電流I1之流向依序耦接至電流路徑305,使得第一放大器3011之輸出端輸出一高位準電位而導通第三N型電晶體3013,此提高之電流I2會經由導通之第三N型電晶體3013傳送至第二電阻3014用以產生第一信號S1,亦即跨於第二電阻3014上之電壓準位,當此電壓準位大於控制單元303中之第一N型電晶體3031之起始電壓時,使得第一N型電晶體3031導通,拉低開關304之閘極電壓,達成過電流保護的目的。當開關304之閘極電壓被拉低至一特定值時,此時輸出電壓Vout亦會降至一特定電壓,使得第二過電流偵測單元302啟動。 In one embodiment, the current path 305 has a path resistance Rs, and the currents flowing through the path resistance Rs and the first resistor 3012 are current I1 and current I2, respectively, and the magnitudes of the current I1 and the current I2 are equal to the path resistance Rs and The ratio of the first resistor 3012 is related. When the current increases in the current path 305, that is, the current I1 flowing through the path resistance Rs is increased, the current I2 is relatively increased due to the characteristics of the negative feedback. And the positive terminal and the negative terminal of the first amplifier 3011 are sequentially coupled to the current path 305 according to the flow direction of the current I1, so that the output terminal of the first amplifier 3011 outputs a high level potential to turn on the third N-type transistor 3013. The increased current I2 is transmitted to the second resistor 3014 via the turned-on third N-type transistor 3013 for generating the first signal S1, that is, across the voltage level on the second resistor 3014, when the voltage level is greater than When the initial voltage of the first N-type transistor 3031 in the control unit 303 is turned on, the first N-type transistor 3031 is turned on, and the gate voltage of the switch 304 is pulled down to achieve the purpose of overcurrent protection. When the gate voltage of the switch 304 is pulled down to a specific value, the output voltage Vout also drops to a specific voltage, so that the second overcurrent detecting unit 302 is activated.
第二過電流偵測單元302包括:一第二放大器3021、一第三電阻3022、一第四電阻3025以及一由第一P型電晶體3023和第二P型電晶體3024構成之電流鏡電路。其中,第二放大器3021、第三電阻3022、電流鏡電路以及第四電阻3025形成一負回授關係,第二過電流偵測單元302即係利用此整體負回授之特性,將第二放大器3021之正端及負端拉至等電位。其中,第二放大器3021之輸出端耦接第一P型電晶體3023和第二P型電晶體3024之閘極端,而第二放大器3012之正端與負端均耦接至電流路徑305,且第二放大器3011是根據電流路徑305上之電流I1流向依序將負端與正端耦接至電流路徑305。第一P型電晶體3023和第二P型電晶體3024之源極耦接至電壓Vdd,第一P型電晶體3023之汲極端耦接至第二放大器3021之正端,第二P型電晶體3024之汲極端耦接至第四電阻3025。 The second overcurrent detecting unit 302 includes a second amplifier 3021, a third resistor 3022, a fourth resistor 3025, and a current mirror circuit formed by the first P-type transistor 3023 and the second P-type transistor 3024. . The second amplifier 3021, the third resistor 3022, the current mirror circuit and the fourth resistor 3025 form a negative feedback relationship, and the second overcurrent detecting unit 302 utilizes the characteristics of the overall negative feedback to apply the second amplifier. The positive and negative ends of 3021 are pulled to the equipotential. The output of the second amplifier 3021 is coupled to the gate terminals of the first P-type transistor 3023 and the second P-type transistor 3024, and the positive and negative terminals of the second amplifier 3012 are coupled to the current path 305, and The second amplifier 3011 couples the negative and positive terminals to the current path 305 in sequence according to the current I1 flowing on the current path 305. The source of the first P-type transistor 3023 and the second P-type transistor 3024 is coupled to the voltage Vdd, the first terminal of the first P-type transistor 3023 is coupled to the positive terminal of the second amplifier 3021, and the second P-type is The top of the crystal 3024 is coupled to the fourth resistor 3025.
在一實施例中,電流路徑305具有一路徑電阻Rs,且流經電流路徑305和第三電阻3022之電流分別為電流I1及電流I3,則電流I1和電流I3之大小會與路徑電阻Rs和第三電阻3022之比例有關。當電流路徑305發生電流增加時,亦即流經路徑電阻Rs之電流為I1提高,因為負回授特性,電流I3亦相對地提高。且由於第二放大器3021是根據電流方向依序將負端與正端耦接至電流路徑305,使得第二放大器3012之輸出端輸出一低位準電位而導通第一P型電晶體3023和第二P型電晶體3024。且由於第一P型電晶體3023和第二P型電晶體3024形成一電流鏡電路,因此提高之電流I3亦同時等比例形成於第二P型電 晶體3024之汲極處用以產生第二信號S2,亦即跨於第四電阻3025上之電壓準位,當此電壓準位大於控制單元303中之第二N型電晶體3032起始電壓時,使得第二N型電晶體3032導通,拉低開關304之閘極電壓,達成過電流保護的目的。 In one embodiment, the current path 305 has a path resistance Rs, and the currents flowing through the current path 305 and the third resistor 3022 are current I1 and current I3, respectively, and the magnitudes of the current I1 and the current I3 are equal to the path resistance Rs and The ratio of the third resistor 3022 is related. When the current increases in the current path 305, that is, the current flowing through the path resistance Rs is increased by I1, the current I3 is relatively increased due to the negative feedback characteristic. And because the second amplifier 3021 sequentially couples the negative terminal and the positive terminal to the current path 305 according to the current direction, so that the output terminal of the second amplifier 3012 outputs a low level potential to turn on the first P-type transistor 3023 and the second. P-type transistor 3024. And since the first P-type transistor 3023 and the second P-type transistor 3024 form a current mirror circuit, the increased current I3 is also formed in equal proportion to the second P-type battery. The drain of the crystal 3024 is used to generate the second signal S2, that is, across the voltage level on the fourth resistor 3025. When the voltage level is greater than the initial voltage of the second N-type transistor 3032 in the control unit 303. The second N-type transistor 3032 is turned on, and the gate voltage of the switch 304 is pulled down to achieve the purpose of overcurrent protection.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100‧‧‧過電流保護電路 100‧‧‧Overcurrent protection circuit
101‧‧‧負載電路 101‧‧‧Load circuit
103‧‧‧電流偵測電路 103‧‧‧ Current detection circuit
104‧‧‧N型電晶體 104‧‧‧N type transistor
105‧‧‧供電路徑 105‧‧‧Power supply path
106‧‧‧控制單元 106‧‧‧Control unit
200‧‧‧過電流保護電路 200‧‧‧Overcurrent protection circuit
201和301‧‧‧第一過電流偵測單元 201 and 301‧‧‧First overcurrent detection unit
202和302‧‧‧第二過電流偵測單元 202 and 302‧‧‧Second overcurrent detection unit
203和303‧‧‧控制單元 203 and 303‧‧‧ control units
204和304‧‧‧開關 204 and 304‧‧‧ switches
205和305‧‧‧電流路徑 205 and 305‧‧‧ current paths
210‧‧‧電源輸入端 210‧‧‧Power input
211‧‧‧負載端 211‧‧‧Load side
212‧‧‧負載 212‧‧‧load
3011‧‧‧第一放大器 3011‧‧‧First amplifier
3012‧‧‧第一電阻 3012‧‧‧First resistance
3013‧‧‧第三N型電晶體 3013‧‧‧ Third N-type transistor
3014‧‧‧第二電阻 3014‧‧‧second resistance
3021‧‧‧第二放大器 3021‧‧‧second amplifier
3022‧‧‧第三電阻 3022‧‧‧ Third resistor
3023‧‧‧第一P型電晶體 3023‧‧‧First P-type transistor
3024‧‧‧第二P型電晶體 3024‧‧‧Second P-type transistor
3025‧‧‧第四電阻 3025‧‧‧fourth resistor
3031‧‧‧第一N型電晶體 3031‧‧‧First N-type transistor
3032‧‧‧第二N型電晶體 3032‧‧‧Second N-type transistor
3033‧‧‧閘極電壓供應電路 3033‧‧‧gate voltage supply circuit
Rs‧‧‧路徑電阻 Rs‧‧‧ path resistance
I1,I2和I3‧‧‧電流 I1, I2 and I3‧‧‧ current
S1‧‧‧第一信號 S1‧‧‧ first signal
S2‧‧‧第二信號 S2‧‧‧ second signal
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖所示為一習知過電流保護電路之概略圖示。 The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.
第2圖所示為根據本發明一實施方式之過電流保護電路之概略圖示。 Fig. 2 is a schematic diagram showing an overcurrent protection circuit according to an embodiment of the present invention.
第3圖所示為根據本發明一實施方式之過電流保護電路之電路圖。 Fig. 3 is a circuit diagram showing an overcurrent protection circuit according to an embodiment of the present invention.
200‧‧‧過電流保護電路 200‧‧‧Overcurrent protection circuit
201‧‧‧第一過電流偵測單元 201‧‧‧First overcurrent detection unit
202‧‧‧第二過電流偵測單元 202‧‧‧Second overcurrent detection unit
203‧‧‧一控制單元 203‧‧‧ a control unit
204‧‧‧開關 204‧‧‧Switch
205‧‧‧電流路徑 205‧‧‧ Current path
210‧‧‧電源輸入端 210‧‧‧Power input
211‧‧‧負載端 211‧‧‧Load side
212‧‧‧負載 212‧‧‧load
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TWI701536B (en) * | 2018-09-26 | 2020-08-11 | 全漢企業股份有限公司 | Power apparatus, current detecting circuit and current detecting method |
CN112444664A (en) * | 2019-08-28 | 2021-03-05 | 联咏科技股份有限公司 | Overcurrent detector for multi-channel potential converter module |
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TWI701536B (en) * | 2018-09-26 | 2020-08-11 | 全漢企業股份有限公司 | Power apparatus, current detecting circuit and current detecting method |
US11025156B2 (en) | 2018-09-26 | 2021-06-01 | Fsp Technology Inc. | Power apparatus, current detecting circuit and current detecting method |
CN112444664A (en) * | 2019-08-28 | 2021-03-05 | 联咏科技股份有限公司 | Overcurrent detector for multi-channel potential converter module |
CN112444664B (en) * | 2019-08-28 | 2024-05-24 | 联咏科技股份有限公司 | Overcurrent detector for multi-channel potential converter module |
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