TW201417203A - Laser processing apparatus and processing condition setting method of patterned substrate - Google Patents

Laser processing apparatus and processing condition setting method of patterned substrate Download PDF

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TW201417203A
TW201417203A TW102120283A TW102120283A TW201417203A TW 201417203 A TW201417203 A TW 201417203A TW 102120283 A TW102120283 A TW 102120283A TW 102120283 A TW102120283 A TW 102120283A TW 201417203 A TW201417203 A TW 201417203A
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processing
crack
substrate
transient
laser light
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TWI550754B (en
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Yuma Iwatsubo
Hisashi Isokawa
Shohei Nagatomo
Ikuyoshi Nakatani
naoya Kiyama
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Mitsuboshi Diamond Ind Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

A processing condition setting method for well slicing a patterned substrate is provided. Laser beam is irradiated along predetermined scribe lines at discrete places on the patterned substrate by unit pulsed light to form machined traces so that crack extends from each machined trace. The processing condition setting method for slicing the patterned substrate includes: a step of carrying out crack extension process as a transient processing on a part of the patterned substrate; according to a difference value between the specific location coordinates of a crack end of the machined trace extension formed during the transient processing in a first photographed image that is obtained through photographing a transient processing execution location under the condition that focusing is made on the patterned substrate surface and the specific location coordinates of the machined trace of the transient processing in a second photographed image that is obtained through photographing processing execution location under the condition that the focus point is aligned with the focal point location of the laser beam in the transient processing, a shifting direction of a laser beam irradiation location is specified.

Description

雷射加工裝置及具有圖案之基板之加工條件設定方法 Laser processing apparatus and processing condition setting method of patterned substrate

本發明係關於在分割於單結晶基板上將複數個單位圖案二維地反覆配置而成之具有圖案之基板時設定加工條件之方法，特別是關於雷射佳工裝置之加工條件之設定方法。 The present invention relates to a method of setting processing conditions when a plurality of unit patterns are two-dimensionally arranged on a single crystal substrate, and in particular, a method for setting processing conditions of a laser beaming device.

LED元件，例如係以下述流程製造，亦即將於藍寶石單結晶等基板(晶圓、母基板)上將LED元件之單位圖案二維地反覆形成而成之具有圖案之基板(具有LED圖案之基板)，以設為格子狀之被稱為切割道(Street)之分割預定區域加以分割並單片化(晶片化)。此處，所謂切割道係藉由分割而成為LED元件之兩個部分之間隙部分之寬度狹窄區域。 The LED element is manufactured by, for example, a substrate having a pattern in which a unit pattern of an LED element is two-dimensionally overlaid on a substrate (wafer, mother substrate) such as sapphire single crystal (a substrate having an LED pattern). It is divided and diced (wafered) by a predetermined segmentation region called a scribe line which is formed in a lattice shape. Here, the scribe line is a narrow-width region which is a gap portion of the two portions of the LED element by division.

作為此種分割用之手法，已有一種公知之手法，係藉由將脈衝寬度為psec等級之超短脈衝光之雷射光以各個單位脈衝光之被照射區域沿加工預定線位於離散處之條件加以照射，以沿形成加工預定線(通常為切割道中心位置)形成分割用之起點(參照例如專利文獻1)。專利文獻1所揭示之手法中，係藉由在各個單位脈衝光之被照射區域形成之加工痕之間產生因劈開或裂開而形成之龜裂伸展(裂痕伸展)，沿該龜裂分割基板，來實現單片化。 As a method for such division, there is a known method of arranging the irradiated light of the ultrashort pulse light having a pulse width of psec level at a discrete position along the planned line by the irradiated area of each unit pulsed light. Irradiation is performed to form a starting point for division along a line to be formed (usually a center position of the cutting path) (see, for example, Patent Document 1). In the method disclosed in Patent Document 1, a crack extension (crack extension) formed by splitting or splitting between the processing marks formed in the irradiated region of each unit pulsed light is performed, and the substrate is divided along the crack. To achieve singulation.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2001-131256號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-131256

如上述之具有圖案之基板中，通常係沿與設於藍寶石單結晶基板之定向平面(orientation flat)平行之方向及與此方向正交之方向配置單位圖案而成。因此，此種具有圖案之基板中，切割道係延伸於與定向平面(Orientation flat)平行之方向及與此方向垂直之方向而成。 In the substrate having the pattern as described above, the unit pattern is usually arranged in a direction parallel to the orientation flat provided on the sapphire single crystal substrate and in a direction orthogonal to the direction. Therefore, in such a patterned substrate, the scribe line extends in a direction parallel to the orientation flat and perpendicular to the direction.

在以如專利文獻1所揭示之手法分割此種具有圖案之基板之情形，當然會沿平行於定向平面之切割道與垂直於定向平面之切割道照射雷射光。此種情形下，伴隨雷射光之照射之自加工痕之龜裂之伸展不僅於亦係加工預定線之延伸方向之雷射光之照射方向(掃描方向)產生，亦在基板之厚度方向產生。 In the case of dividing such a patterned substrate by the method disclosed in Patent Document 1, it is of course possible to illuminate the laser light along a scribe line parallel to the orientation plane and a scribe line perpendicular to the orientation plane. In this case, the extension of the crack of the self-processing mark accompanying the irradiation of the laser light is generated not only in the irradiation direction (scanning direction) of the laser light in the extending direction of the planned line but also in the thickness direction of the substrate.

不過，相較於在沿平行於定向平面之切割道照射雷射光時在基板厚度方向之龜裂伸展係從加工痕產生於垂直方向，當以相同照射條件沿垂直於定向平面之切割道照射雷射光時，龜裂並非於垂直方向而係伸展於從垂直方向傾斜之方向，此種差異已可由過去經驗得知。而且，此種龜裂傾斜之方向，雖在相同之晶圓面內會一致，但有隨各個具有圖案之基板而不同之情形。 However, the crack extension in the thickness direction of the substrate is generated from the processing mark in the vertical direction as compared with the irradiation of the laser light along the dicing plane parallel to the orientation plane, and the ray is irradiated along the scribe line perpendicular to the orientation plane under the same irradiation conditions. When the light is emitted, the crack does not extend in the vertical direction but in the direction inclined from the vertical direction. This difference has been known from past experience. Further, the direction in which the cracks are inclined may be the same in the same wafer surface, but may be different depending on the substrate having the pattern.

此外，作為用於具有圖案之基板之藍寶石單結晶基板，雖除了c面或a面等結晶面之面方位與主面法線方向一致者以外有時會使用以在主面內垂直於定向平面之方向作為傾斜軸而使該等結晶面之面方位相對主面法線方向傾斜之所謂賦予傾斜角(off angle)之基板(亦稱為off基板)，但 上述之沿垂直於定向平面之切割道照射雷射光時之龜裂之傾斜不論是否是off基板均會產生，此點已由本發明之發明者群確認。 Further, as a sapphire single crystal substrate for a patterned substrate, the surface orientation of the crystal face such as the c-plane or the a-plane may be used to be perpendicular to the orientation plane in the main surface, in addition to the plane orientation of the principal surface of the c-plane or the a-plane. The direction in which the plane direction of the crystal faces is inclined with respect to the normal direction of the main surface as the tilt axis, so-called an off angle substrate (also referred to as an off substrate), but The above-described inclination of the crack when irradiating the laser light along the scribe line perpendicular to the orientation plane is generated regardless of whether or not the substrate is off, which has been confirmed by the inventors of the present invention.

另一方面，從LED元件之微小化或每一基板面積之擷取個數提升等之要求來看，切割道之寬度較窄是比較理想的。然而，當以此種切割道之寬度狹窄之具有圖案之基板為對象適用專利文獻1所揭示之手法時，垂直於定向平面之切割道，有可能產生傾斜而伸展之龜裂不位在該切割道之寬度內而到達鄰接之作為LED元件之區域的不良情形。此種不良情形之產生，由於成為使LED元件之良率降低之要因，因此並非理想。 On the other hand, in view of the miniaturization of the LED elements or the increase in the number of extractions per substrate area, it is preferable that the width of the dicing streets is narrow. However, when the method disclosed in Patent Document 1 is applied to a substrate having a pattern having a narrow width of such a dicing street, a scribe line perpendicular to the orientation plane may be inclined and the crack is not formed at the cutting. The problem is that the width of the track reaches the area adjacent to the LED element. Such a problem arises because it is a factor that lowers the yield of the LED element, which is not preferable.

為了抑制此種良率之降低，雖必須在加工各個具有圖案之基板時特定龜裂傾斜之方向，並對應於此來設定加工條件例如加工位置，但在LED元件之量產過程中，為了使加工生產性提升，被要求迅速地進行對各個具有圖案之基板之加工條件之設定。 In order to suppress such a decrease in yield, it is necessary to specify a direction in which the crack is inclined when processing each of the patterned substrates, and to set processing conditions such as a processing position, but in the mass production process of the LED element, Improvement in processing productivity is required to quickly set the processing conditions of each patterned substrate.

本發明有鑑於上述課題而完成，其目的在於提供能以將具有圖案之基板良好地單片化之方式設定加工條件之方法、以及實現此方法之裝置。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a method capable of setting processing conditions in which a substrate having a pattern is satisfactorily singulated, and an apparatus for realizing the method.

為了解決上述課題，申請專利範圍第1項之發明係一種雷射加工裝置，其具備：射出源，射出雷射光；載台，能固定具有圖案之基板，該具有圖案之基板係於單結晶基板上將複數個單位元件圖案二維地反覆配置而成；能藉由使前述射出源與前述載台相對移動以將前述雷射光一邊沿既定之加工預定線掃描、一邊照射於前述具有圖案之基板，其特徵在於：能執行龜裂伸展加工，其係以藉由前述雷射光之各個單位脈衝光而形 成於前述具有圖案之基板之加工痕沿前述加工預定線位於離散處之方式照射前述雷射光，使龜裂從各個前述加工痕於前述具有圖案之基板伸展；且進一步具備攝影手段，能拍攝載置於前述載台之前述具有圖案之基板；以及偏置條件設定手段，係設定偏置條件，該偏置條件係用以在前述龜裂伸展加工時使前述雷射光之照射位置從前述加工預定線偏置；前述偏置條件設定手段，在將前述具有圖案之基板之一部分位置設定為前述偏置條件設定用之前述龜裂伸展加工之執行位置，對前述執行位置進行前述偏置條件設定用之前述龜裂伸展加工即暫態加工後，使前述攝影手段拍攝在使焦點對準於前述具有圖案之基板表面之狀態下拍攝前述暫態加工之前述執行位置而取得第1攝影影像，且在使焦點對準於已進行前述暫態加工時之前述雷射光之焦點位置之狀態下拍攝前述暫態加工之前述執行位置而取得第2攝影影像；根據從前述第1攝影影像特定之從藉由前述暫態加工形成之加工痕伸展之龜裂之終端之位置座標與根據從前述第2攝影影像特定之前述暫態加工之加工痕之位置座標之差分值，在前述龜裂伸展加工時特定應使前述雷射光之照射位置偏置之方向。 In order to solve the above problems, the invention of claim 1 is a laser processing apparatus comprising: an emission source for emitting laser light; and a stage capable of fixing a substrate having a pattern, the patterned substrate being attached to the single crystal substrate The plurality of unit element patterns are repeatedly arranged two-dimensionally; the projection source can be moved relative to the stage to scan the laser beam along the predetermined planned line and irradiated to the patterned substrate , characterized in that it is capable of performing a crack stretching process, which is formed by pulse light of each unit of the aforementioned laser light The processing marks formed on the patterned substrate are irradiated with the laser light so as to be scattered at a predetermined line along the processing line, so that the cracks are stretched from the respective processing marks on the substrate having the pattern; and further, the photographing means is provided, and the photographing means can be photographed. a substrate having a pattern disposed on the stage; and a bias condition setting means for setting a bias condition for causing the irradiation position of the laser light to be irradiated from the processing at the time of the crack stretching process The offset condition setting means sets the position of one of the patterned substrates to the execution position of the crack extension processing for setting the bias condition, and sets the offset condition for the execution position. After the transient processing of the crack stretching process, the imaging means captures the execution position of the transient processing in a state in which the focus is on the surface of the substrate having the pattern, and obtains the first captured image, and Shooting in a state where the focus position of the aforementioned laser light when the aforementioned transient processing has been performed is performed Obtaining a second photographic image by the execution position of the transient processing; and locating a position of the terminal of the crack extending from the processing mark formed by the transient processing from the first photographic image and according to the second The difference value of the position coordinates of the processing marks of the transient processing specified by the photographic image specifies the direction in which the irradiation position of the laser light is biased during the crack propagation processing.

申請專利範圍第2項之發明係如申請專利範圍第1項之雷射加工裝置，其中，前述偏置條件設定手段，根據藉由在前述第1攝影影像與前述第2攝影影像之各個中沿前述暫態加工時之加工方向積算像素值而取得之積算設定檔，特定在前述暫態加工時產生之前述龜裂之終端之位置座標與前述暫態加工時之前述加工痕之位置座標。 The invention of claim 2 is the laser processing apparatus of claim 1, wherein the bias condition setting means is based on each of the first photographic image and the second photographic image The integrated set value obtained by integrating the pixel values in the processing direction during the transient processing specifies the position coordinates of the end of the crack generated at the time of the transient processing and the position coordinates of the processing mark during the transient processing.

申請專利範圍第3項之發明係如如申請專利範圍第1或2項之雷射加工裝置，其中，前述偏置條件設定手段，係根據預先取得之作 為前述龜裂開始點加工之對象之前述具有圖案之基板之個體資訊，決定在前述龜裂伸展加工時使前述雷射光之照射位置從前述加工預定線偏置時之偏置量。 The invention of claim 3 is the laser processing apparatus according to claim 1 or 2, wherein the bias condition setting means is based on a pre-acquisition The individual information of the patterned substrate which is the target of the crack initiation point is determined as an offset amount when the irradiation position of the laser light is offset from the processing target line during the crack stretching process.

申請專利範圍第4項之發明係一種具有圖案之基板之加工條件設定方法，係設定進行加工時之加工條件之方法，該加工係藉由對於單結晶基板上將複數個單位元件圖案二維地反覆配置而成之具有圖案之基板照射雷射光以將前述具有圖案之基板單片化，其特徵在於：將前述具有圖案之基板單片化之加工，係以藉由前述雷射光之各個單位脈衝光而形成於前述具有圖案之基板之加工痕沿前述加工預定線位於離散處之方式照射前述雷射光，使龜裂從各個前述加工痕於前述具有圖案之基板伸展之龜裂伸展加工；且具備：偏置條件設定步驟，係在前述龜裂開始點加工前，設定用以在前述龜裂伸展加工時使前述雷射光之照射位置從前述加工預定線偏置之偏置條件；前述偏置條件設定步驟，具備：暫態加工步驟，在將前述具有圖案之基板之一部分位置設定為前述偏置條件設定用之前述龜裂伸展加工之執行位置，對前述執行位置進行前述偏置條件設定用之前述龜裂伸展加工即暫態加工；攝影步驟，使既定之攝影手段拍攝在使焦點對準於前述具有圖案之基板表面之狀態下拍攝前述暫態加工之前述執行位置而取得第1攝影影像，且在使焦點對準於已進行前述暫態加工時之前述雷射光之焦點位置之狀態下拍攝前述暫態加工之前述執行位置而取得第2攝影影像；以及偏置方向特定步驟，根據從前述第1攝影影像特定之從藉由前述暫態加工形成之加工痕伸展之龜裂之終端之位置座標與根據從前述第2攝影影像特定之前述暫態加工之加工痕之位置座標之差分值，在前述龜裂伸 展加工時特定應使前述雷射光之照射位置偏置之方向。 The invention of claim 4 is a method for setting a processing condition of a patterned substrate, and is a method for setting processing conditions at the time of processing by two-dimensionally patterning a plurality of unit elements on a single crystal substrate The substrate having the pattern repeatedly arranged to illuminate the laser light to singulate the substrate having the pattern, wherein the processing of the substrate having the pattern is performed by each unit pulse of the laser light The processing marks formed on the substrate having the pattern are irradiated with the laser light so as to be scattered at a predetermined line along the processing line, and the crack is stretched and stretched from the respective processing marks on the substrate having the pattern; The bias condition setting step is to set an offset condition for biasing the irradiation position of the laser light from the processing target line during the crack propagation processing before the crack initiation point processing; the bias condition The setting step includes: a transient processing step of setting a position of one of the patterned substrates to the offset The execution position of the crack propagation process for setting the condition, the transient processing of the crack stretching process for setting the bias condition to the execution position, and the photographing step of causing the predetermined imaging means to focus on Acquiring the execution position of the transient processing in the state of the surface of the substrate having the pattern to obtain the first image, and photographing the focus in the state of the focus of the laser light when the transient processing is performed. Obtaining a second photographic image by the execution position of the transient processing; and a biasing direction specifying step of locating a terminal of the crack extending from the processing mark formed by the transient processing from the first photographic image The coordinate value of the coordinates and the coordinate of the position of the processing mark according to the aforementioned transient processing specified from the second photographic image, The direction in which the irradiation position of the aforementioned laser light is biased is specified in the processing.

申請專利範圍第5項之發明係如如申請專利範圍第4項之具有圖案之基板之加工條件設定方法，其中，前述偏置方向特定步驟中，根據藉由在前述第1攝影影像與前述第2攝影影像之各個中沿前述暫態加工時之加工方向積算像素值而取得之積算設定檔，特定在前述暫態加工時產生之前述龜裂之終端之位置座標與前述暫態加工時之前述加工痕之位置座標。 The invention of claim 5 is the processing condition setting method of the patterned substrate according to claim 4, wherein the biasing direction specifying step is based on the first photographic image and the foregoing (2) the integrated set value obtained by integrating the pixel values in the processing direction during the transient processing in each of the photographic images, and specifying the position coordinates of the end of the crack generated during the transient processing and the aforementioned transient processing The position coordinates of the processing marks.

申請專利範圍第6項之發明係如如申請專利範圍第4或5項之具有圖案之基板之加工條件設定方法，其中，前述偏置條件設定步驟，進一步具備根據預先取得之作為前述龜裂開始點加工之對象之前述具有圖案之基板之個體資訊，決定在前述龜裂伸展加工時使前述雷射光之照射位置從前述加工預定線偏置時之偏置量。 The invention of claim 6 is the processing condition setting method of the patterned substrate according to claim 4 or 5, wherein the bias condition setting step further includes starting the crack according to the pre-acquisition The individual information of the patterned substrate on which the dot is processed determines the offset amount when the irradiation position of the laser light is offset from the predetermined processing line during the crack stretching process.

根據申請專利範圍第1至6項之發明，由於在藉由龜裂伸展加工將具有圖案之基板單片化時，在與定向平面正交之方向之加工中龜裂會傾斜的情形，能藉由在使雷射光之照射位置偏置後進行該龜裂伸展加工，因此可非常良好地抑制將設於具有圖案之基板之構成各個元件晶片之單位圖案單片化時產生破壞。其結果，提升藉由將具有圖案之基板單片化而取得之元件晶片之良率。 According to the invention of the first to sixth aspects of the patent application, since the substrate having the pattern is singulated by the crack stretching process, the crack may be inclined in the processing in the direction orthogonal to the orientation plane, Since the crack stretching process is performed after the irradiation position of the laser beam is biased, it is possible to very satisfactorily suppress the occurrence of breakage when the unit pattern of each of the element wafers provided on the patterned substrate is singulated. As a result, the yield of the element wafer obtained by singulating the patterned substrate is improved.

1‧‧‧控制器 1‧‧‧ controller

4‧‧‧載台 4‧‧‧ stage

4m‧‧‧移動機構 4m‧‧‧Mobile agencies

5‧‧‧照射光學系 5‧‧‧Optical Optics

6‧‧‧上部觀察光學系 6‧‧‧Upper viewing optics

6a、16a‧‧‧攝影機 6a, 16a‧‧‧ camera

6b、16b‧‧‧監視器 6b, 16b‧‧‧ monitor

7‧‧‧上部照明系 7‧‧‧Upper lighting system

8‧‧‧下部照明系 8‧‧‧Lower lighting system

10‧‧‧被加工物 10‧‧‧Processed objects

10a‧‧‧保持片 10a‧‧‧ Keeping the film

11‧‧‧吸引手段 11‧‧‧Attraction means

100‧‧‧雷射加工裝置 100‧‧‧ Laser processing equipment

16‧‧‧下部觀察光學系 16‧‧‧ Lower Observation Optics

51、71、81‧‧‧半反射鏡 51, 71, 81‧‧‧ half mirror

52、82‧‧‧聚光透鏡 52, 82‧‧‧ concentrating lens

CR1、CR2‧‧‧龜裂 CR1, CR2‧‧‧ crack

IM1、IM2‧‧‧攝影影像 IM1, IM2‧‧‧ photographic images

IP1‧‧‧雷射光之照射位置 IP1‧‧‧Laser light irradiation position

L1‧‧‧上部照明光 L1‧‧‧Upper illumination

L2‧‧‧下部照明光 L2‧‧‧Lower illumination

LB‧‧‧雷射光 LB‧‧‧Laser light

M‧‧‧加工痕 M‧‧‧ machining marks

OF‧‧‧定向平面 OF‧‧‧ Orientation plane

PL‧‧‧加工預定線 PL‧‧‧Processing line

S1‧‧‧上部照明光源 S1‧‧‧Upper illumination source

S2‧‧‧下部照明光源 S2‧‧‧lower illumination source

SL‧‧‧雷射光源 SL‧‧‧Laser light source

ST‧‧‧切割道 ST‧‧‧ cutting road

T1、T2‧‧‧(龜裂)之終端 T1, T2‧‧‧ (crack) terminal

UP‧‧‧單位圖案 UP‧‧‧ unit pattern

W‧‧‧具有圖案之基板 W‧‧‧patterned substrate

W1‧‧‧單結晶基板 W1‧‧‧Single crystal substrate

Wa、Wb‧‧‧(具有圖案之基板之)主面 Main surface of Wa, Wb‧‧‧ (with patterned substrate)

圖1係概略顯示用於被加工物之分割之雷射加工裝置100構成的示意 圖。 Fig. 1 is a schematic view showing the configuration of a laser processing apparatus 100 for dividing a workpiece. Figure.

圖2係用以說明龜裂伸展加工中之雷射光LB之照射態樣的圖。 Fig. 2 is a view for explaining an irradiation state of the laser light LB in the crack stretching process.

圖3(a),(b)係具有圖案之基板W之示意俯視圖及部分放大圖。 3(a) and 3(b) are a schematic plan view and a partial enlarged view of a substrate W having a pattern.

圖4係顯示沿加工預定線PL照射雷射光LB之情形之具有圖案之基板W在垂直於Y方向之剖面之龜裂伸展之樣子的圖。 Fig. 4 is a view showing how the patterned substrate W in the case where the laser beam LB is irradiated along the planned line PL is stretched in a section perpendicular to the Y direction.

圖5係顯示使雷射光LB之照射位置IP1偏置而進行龜裂伸展加工之情形之具有圖案之基板W在厚度方向之龜裂伸展之樣子的示意剖面圖。 FIG. 5 is a schematic cross-sectional view showing a state in which the patterned substrate W is cracked in the thickness direction in a case where the irradiation position IP1 of the laser light LB is biased and the crack stretching process is performed.

圖6係顯示第1態樣之偏置條件之設定處理流程的圖。 Fig. 6 is a view showing a flow of setting processing of the bias condition of the first aspect.

圖7係例示暫態加工時之雷射光LB之照射位置IP1的圖。 Fig. 7 is a view showing an irradiation position IP1 of the laser light LB at the time of transient processing.

圖8(a),(b)係用以說明基於具有圖案之基板W之攝影影像IM1之座標X1之決定方法的圖。 8(a) and 8(b) are views for explaining a method of determining the coordinates X1 of the photographic image IM1 based on the substrate W having the pattern.

圖9(a),(b)係用以說明基於具有圖案之基板W之攝影影像IM2之座標X2之決定方法的圖。 9(a) and 9(b) are diagrams for explaining a method of determining the coordinates X2 of the photographic image IM2 based on the patterned substrate W.

圖10係顯示第2態樣之偏置條件之設定處理流程的圖。 Fig. 10 is a view showing a flow of a setting process of a bias condition of the second aspect.

<雷射加工裝置> <Laser processing device>

圖1係概略顯示可適用於本發明之實施形態之用於被加工物之分割之雷射加工裝置100構成的示意圖。雷射加工裝置100主要具備進行裝置內之各種動作(觀察動作、對準動作、加工動作等)之控制之控制器1、將被加工物10載置於其上之載台4、以及將從雷射光源SL射出之雷射光LB照射於被加工物10之照射光學系5。 Fig. 1 is a schematic view showing the configuration of a laser processing apparatus 100 for use in dividing a workpiece according to an embodiment of the present invention. The laser processing apparatus 100 mainly includes a controller that controls various operations (observation operation, alignment operation, machining operation, and the like) in the device, a stage 4 on which the workpiece 10 is placed, and The laser beam LB emitted from the laser light source SL is irradiated onto the illumination optical system 5 of the workpiece 10.

載台4主要由石英等在光學上為透明之部材構成。載台4 能藉由例如吸引泵等吸引手段11將載置於其上面之被加工物10吸引固定。又，載台4能藉由移動機構4m移動於水平方向。此外，圖1中，雖係對被加工物10貼附具有粘著性之保持片10a後以該保持片10a之側作為被載置面而將被加工物10載置於載台4，但使用保持片10a之態樣並非必須。 The stage 4 is mainly composed of an optically transparent member such as quartz. Stage 4 The workpiece 10 placed on the upper surface can be suction-fixed by the suction means 11 such as a suction pump. Further, the stage 4 can be moved in the horizontal direction by the moving mechanism 4m. In addition, in the case of the workpiece 10, the adhesive sheet 10a is attached to the workpiece 10, and the workpiece 10 is placed on the stage 4 with the side of the holding sheet 10a as the placement surface. It is not necessary to use the aspect of the holding piece 10a.

移動機構4m係藉由未圖示之驅動手段之作用在水平面內使載台4移動於既定之XY二軸方向。藉此，實現觀察位置之移動或雷射光照射位置之移動。此外，關於移動機構4m，若在以既定之旋轉軸為中心之在水平面內之旋轉(θ旋轉)動作亦能與水平驅動進行，就進行對準等方面而言更佳。 The moving mechanism 4m moves the stage 4 in the horizontal direction of the predetermined XY in the horizontal plane by the action of a driving means (not shown). Thereby, the movement of the observation position or the movement of the laser light irradiation position is achieved. Further, the movement mechanism 4m is preferably driven in a horizontal direction by a rotation (θ rotation) operation in a horizontal plane centering on a predetermined rotation axis.

照射光學系5，具備雷射光源SL、設於省略圖示之鏡筒內之半反射鏡51、以及聚光透鏡52。 The illuminating optical system 5 includes a laser light source SL, a half mirror 51 provided in a lens barrel (not shown), and a condensing lens 52.

雷射加工裝置100概略地使從雷射光源SL發出之雷射光LB在半反射鏡51反射後，使該雷射光LB以藉由聚光透鏡52對焦於載置於載台4之被加工物10之被加工部位之方式聚光，而照射於被加工物10。接著，在此態樣中，係藉由一邊照射雷射光LB、一邊使載台4移動，而能對被加工物10進行沿既定之加工預定線之加工。亦即，雷射加工裝置100係藉由對被加工物10使雷射光LB相對地掃描來進行加工之裝置。 The laser processing apparatus 100 roughly reflects the laser light LB emitted from the laser light source SL on the half mirror 51, and causes the laser beam LB to focus on the workpiece placed on the stage 4 by the collecting lens 52. The portion to be processed of 10 is condensed and irradiated onto the workpiece 10. Then, in this aspect, the workpiece 4 is moved while the laser light LB is irradiated, and the workpiece 10 can be processed along a predetermined planned line. That is, the laser processing apparatus 100 is a device that performs processing by relatively scanning the laser beam LB with respect to the workpiece 10.

作為雷射光LB，係非常合適地使用Nd：YAG雷射之態樣。作為雷射光源SL，使用波長為500nm~1600nm者。又，為了實現上述之加工圖案之加工，雷射光LB之脈衝寬度必須為1psec~50psec左右。又，反覆頻率R為10kHz~200kHz左右、雷射光之照射能量(脈衝能量)為0.1μJ~50μJ左右，則非常合適。 As the laser light LB, the Nd:YAG laser is very suitably used. As the laser light source SL, a wavelength of 500 nm to 1600 nm is used. Further, in order to realize the processing of the above-described processing pattern, the pulse width of the laser light LB must be about 1 psec to 50 psec. Further, the repetition frequency R is about 10 kHz to 200 kHz, and the irradiation energy (pulse energy) of the laser light is about 0.1 μJ to 50 μJ, which is very suitable.

此外，雷射加工裝置100中，在加工處理時，亦能視必要在使對焦位置從被加工物10表面意圖地偏移之散焦狀態下照射雷射光LB。本實施形態中，最好係將散焦值(從被加工物10往內部之方向之對焦位置之偏移量)設定為0μm以上、30μm以下之範圍。 Further, in the laser processing apparatus 100, it is also possible to irradiate the laser beam LB in a defocused state in which the in-focus position is intentionally shifted from the surface of the workpiece 10 as necessary during the processing. In the present embodiment, it is preferable to set the defocus value (the amount of shift from the in-focus position in the direction from the workpiece 10 to the inside) to a range of 0 μm or more and 30 μm or less.

又，雷射加工裝置100中，於載台4之上方，具備用以從上方觀察、拍攝被加工物10之上部觀察光學系6、以及從載台4之上方對被加工物10照射照明光之上部照明系7。又，於載台4之下方，具備從載台4之下方對被加工物10照射照明光之下部照明系8。 Further, in the laser processing apparatus 100, above the stage 4, the optical system 6 is viewed from above, the upper portion of the workpiece 10 is imaged, and the workpiece 10 is illuminated from above the stage 4. The upper lighting system is 7. Further, below the stage 4, the illumination system 8 is irradiated with illumination light below the workpiece 10 from below the stage 4.

上部觀察光學系6具備設於半反射鏡51上方(鏡筒之上方)之CCD攝影機6a與連接於該CCD攝影機6a之監視器6b。又，上部照明系7具備上部照明光源S1與半反射鏡71。 The upper observation optical system 6 includes a CCD camera 6a provided above the half mirror 51 (above the lens barrel) and a monitor 6b connected to the CCD camera 6a. Further, the upper illumination system 7 includes an upper illumination light source S1 and a half mirror 71.

此等上部觀察光學系6與上部照明系7與照射光學系5構成為同軸。更詳言之，照射光學系5之半反射鏡51與聚光透鏡52係與上部觀察光學系6及上部照明系7共用。藉此，從上部照明光源S1發出之上部照明光L1，在設於未圖示之鏡筒內之半反射鏡71被反射，進而透射過構成照射光學系5之半反射鏡51後，在聚光透鏡52被聚光而照射於被加工物10。又，上部觀察光學系6中，能在被照射上部照明光L1之狀態下進行透射過聚光透鏡52、半反射鏡51及半反射鏡71之被加工物10之明視野像之觀察。 The upper observation optical system 6 and the upper illumination system 7 and the illumination optical system 5 are coaxial. More specifically, the half mirror 51 and the condensing lens 52 of the illuminating optical system 5 are shared with the upper observation optical system 6 and the upper illumination system 7. Thereby, the upper illumination light L1 is emitted from the upper illumination light source S1, the half mirror 71 provided in the lens barrel (not shown) is reflected, and is transmitted through the half mirror 51 constituting the illumination optical system 5, and then collected. The optical lens 52 is condensed and irradiated to the workpiece 10. Further, in the upper observation optical system 6, the bright field image of the workpiece 10 transmitted through the condensing lens 52, the half mirror 51, and the half mirror 71 can be observed while the upper illumination light L1 is being irradiated.

又，下部照明系8具備下部照明光源S2、半反射鏡81、以及聚光透鏡82。亦即，雷射加工裝置100中，能使從下部照明光源S2射出並在半反射鏡81反射後在聚光透鏡82聚光之下部照明光L2透過載台4對 被加工物10進行照射。例如，若使用下部照明系8，則能在使下部照明光L2照射於被加工物10之狀態下在上部觀察光學系6進行其透射光之觀察等。 Further, the lower illumination system 8 includes a lower illumination light source S2, a half mirror 81, and a collecting lens 82. That is, in the laser processing apparatus 100, the illumination light L2 can be transmitted from the lower illumination light source S2 and reflected by the half mirror 81, and then the illumination light L2 can be transmitted through the stage 4 by the condenser lens 82. The workpiece 10 is irradiated. For example, when the lower illumination system 8 is used, the optical system 6 can observe the transmitted light in the upper portion while the lower illumination light L2 is irradiated onto the workpiece 10.

再者，如圖1所示，雷射加工裝置100中亦可具備用以從下方觀察、拍攝被加工物10之下部觀察光學系16。下部觀察光學系16具備設於半反射鏡81下方之CCD攝影機16a與連接於該CCD攝影機16a之監視器16b。在此下部觀察光學系16中，例如能在使上部照明光L1照射於被加工物10之狀態下進行其透射光之觀察。 Further, as shown in FIG. 1, the laser processing apparatus 100 may be provided with an optical system 16 for observing the lower portion of the workpiece 10 as viewed from below. The lower observation optical system 16 includes a CCD camera 16a provided below the half mirror 81 and a monitor 16b connected to the CCD camera 16a. In the lower observation optical system 16, for example, the observation of the transmitted light can be performed while the upper illumination light L1 is irradiated onto the workpiece 10.

控制器1進一步具備控制裝置各部之動作以實現後述態樣中之被加工物10之加工處理之控制部2、以及儲存控制雷射加工裝置100之動作之程式3p或在加工處理時被參照之各種資料之記憶部3。 Further, the controller 1 further includes a control unit 2 that controls the operation of each part of the apparatus to realize the processing of the workpiece 10 in the later-described aspect, and a program 3p that stores the operation of the laser processing apparatus 100 or is referred to during processing. The memory part of various materials 3.

控制部2例如係藉由個人電腦或微電腦等通用電腦來實現者，藉由以該電腦讀取儲存於記憶部3之程式3p並執行，以將各種構成要素作為控制部2之功能構成要素予以實現。 The control unit 2 is realized by, for example, a general-purpose computer such as a personal computer or a microcomputer, and reads and executes the program 3p stored in the storage unit 3 by the computer, and uses various components as functional components of the control unit 2. achieve.

記憶部3係藉由ROM或RAM及硬碟等記憶媒體來實現。此外，記憶部3亦可係藉由實現控制部2之電腦之構成要素來實現之態樣，亦可如硬碟等與該電腦另外獨立設置之態樣。 The memory unit 3 is realized by a memory medium such as a ROM, a RAM, or a hard disk. Further, the memory unit 3 may be realized by realizing the components of the computer of the control unit 2, and may be separately provided separately from the computer such as a hard disk.

於記憶部3除了儲存程式3p、作為加工對象之被加工物10之個體資訊(例如材質、結晶方位、形狀(尺寸、厚度)等)以外，亦儲存記述有加工位置(或切割道位置)之被加工物資料D1，且儲存記述有與在各個加工模式中雷射加工態樣對應之針對雷射光各個參數之條件或載台4之驅動條件(或該等之設定可能範圍)等之加工模式設定資料D2。又，於記憶部3 亦適當地儲存有照射位置偏置資料D3，其係在因後述之理由而需使雷射光LB之照射位置I相對記述於被加工物資料D1之加工位置偏置既定距離之情形所參照者。 In addition to the storage unit 3p and the individual information (for example, material, crystal orientation, shape (size, thickness), etc.) of the workpiece 10 to be processed, the memory unit 3 stores the processing position (or the cutting path position). The workpiece data D1 is stored and described as a processing mode corresponding to each of the parameters of the laser light or the driving condition of the stage 4 (or the set possible range) corresponding to the laser processing aspect in each processing mode. Set the data D2. Also, in the memory unit 3 The irradiation position offset data D3 is also appropriately stored, which is referred to by the case where the irradiation position I of the laser light LB is required to be offset from the processing position of the workpiece data D1 by a predetermined distance for the reason described later.

控制部2主要具備：驅動控制部21，控制移動機構4m對載台4之驅動或聚光透鏡52之對焦動作等與加工處理有關係之各種驅動部分之動作；攝影控制部22，控制上部觀察光學系6或下部觀察光學系16對被加工物10之觀察、攝影；照射控制部23，控制來自雷射光源SL之雷射光LB之照射；吸附控制部24，控制吸引手段11之被加工物10對載台4之吸附固定動作；加工處理部25，依據被賦予之被加工物資料D1及加工模式設定資料D2執行對加工對象位置之加工處理；以及偏置設定部26，負責設定在加工處理前設定雷射光LB之照射位置之偏置相關之條件之處理。 The control unit 2 mainly includes a drive control unit 21 that controls the operation of various driving portions related to the processing such as the driving of the stage 4 or the focusing operation of the collecting lens 52 by the moving mechanism 4m, and the imaging control unit 22 controls the upper observation. The optical system 6 or the lower observation optical system 16 observes and photographs the workpiece 10; the irradiation control unit 23 controls the irradiation of the laser light LB from the laser light source SL; and the adsorption control unit 24 controls the workpiece of the suction device 11. 10 pairs of adsorption fixing operations of the stage 4; the processing unit 25 performs processing for processing the processing target position based on the workpiece information D1 and the processing mode setting data D2; and the offset setting unit 26 is responsible for setting processing The process of setting the conditions related to the offset of the irradiation position of the laser light LB before processing.

具備如以上構成之控制器1之雷射加工裝置100，在從操作者被賦予以記述於被加工物資料D1之加工位置作為對象之既定加工模式之加工執行指示後，加工處理部25係取得被加工物資料D1且從加工模式設定資料D2取得與被選擇之加工模式對應之條件，透過驅動控制部21或照射控制部23等其他裝置控制對應之各部之動作以執行與該條件對應之動作。例如從雷射光源SL發出之雷射光LB之波長或輸出、脈衝之反覆頻率、脈衝寬度之調整等，係藉由照射控制部23來實現。藉此，在被作為對象之加工位置中實現被指定之加工模式之加工。 In the laser processing apparatus 100 having the controller 1 configured as described above, the processing unit 25 obtains an instruction to execute the processing in a predetermined processing mode in which the processing position of the workpiece data D1 is specified from the operator. The workpiece data D1 is obtained from the machining mode setting data D2, and the conditions corresponding to the selected machining mode are obtained, and the operations of the respective units are controlled by the drive control unit 21 or the illumination control unit 23 to execute the operation corresponding to the condition. . For example, the wavelength or output of the laser light LB emitted from the laser light source SL, the repetition frequency of the pulse, and the adjustment of the pulse width are realized by the irradiation control unit 23. Thereby, the processing of the specified machining mode is realized in the machining position to be the object.

不過，本實施形態之雷射加工裝置100中，例如被加工物10係具有圖案之基板W(參照圖3及圖4)，在對此種具有圖案之基板W進行下述之龜裂伸展加工之情形，能在上述態樣之雷射加工前視必要情形使 雷射光LB之光軸之照射位置偏置。此種雷射光LB之照射位置之偏置之詳細，留待後述。 In the laser processing apparatus 100 of the present embodiment, for example, the workpiece 10 is a substrate W having a pattern (see FIGS. 3 and 4), and the substrate W having the pattern is subjected to the following crack stretching processing. In the case of the laser processing of the above aspect, it is necessary to make the necessary situation The illumination position of the optical axis of the laser light LB is offset. The details of the offset of the irradiation position of the laser beam LB will be described later.

又，較佳為，雷射加工裝置100構成為能藉由加工處理部25之作用在控制器1依據操作者可利用地被提供之加工處理選單來選擇對應各種加工內容之加工模式。此種情形下，加工處理選單最好係以GUI來提供。 Moreover, it is preferable that the laser processing apparatus 100 is configured to be able to select a processing mode corresponding to various processing contents in the controller 1 by the processing processing unit 25 in accordance with the processing menu available to the operator. In this case, the processing menu is preferably provided by the GUI.

藉由具有如以上之構成，雷射加工裝置100能非常合適地進行各種雷射加工。 With the above configuration, the laser processing apparatus 100 can perform various laser processing very suitably.

<龜裂伸展加工之原理> <Principles of crack stretching processing>

其次，說明雷射加工裝置100中可實現之加工手法之一之龜裂伸展加工。圖2係用以說明龜裂伸展加工中之雷射光LB之照射態樣的圖。更詳言之，圖2顯示了龜裂伸展加工時之雷射光LB之反覆頻率R(kHz)與在雷射光LB之照射時載置被加工物10之載台之移動速度V(mm/sec)與雷射光LB之光束點中心間隔Δ(μm)之關係。此外，以下之說明中，雖係以使用上述之雷射加工裝置100為前提，藉由雷射光LB之射出源為固定，使載置有被加工物10之載台4移動，來實現雷射光LB對被加工物10之相對掃描，但即使係使被加工物10為靜止之狀態來使雷射光LB之射出源移動之態樣，亦同樣地能實現龜裂伸展加工。 Next, a crack stretching process which is one of the processing methods that can be realized in the laser processing apparatus 100 will be described. Fig. 2 is a view for explaining an irradiation state of the laser light LB in the crack stretching process. More specifically, FIG. 2 shows the repetition frequency R (kHz) of the laser light LB during the crack stretching process and the moving speed V (mm/sec) of the stage on which the workpiece 10 is placed during the irradiation of the laser light LB. ) is related to the center distance Δ (μm) of the beam spot of the laser light LB. In addition, in the following description, it is assumed that the above-described laser processing apparatus 100 is used, and the projection source of the laser light LB is fixed, and the stage 4 on which the workpiece 10 is placed is moved to realize the laser light. The LB scans the workpiece 10 in the opposite direction. However, even if the workpiece 10 is in a stationary state and the emission source of the laser beam LB is moved, the crack stretching process can be similarly performed.

如圖2所示，在雷射光LB之反覆頻率為R(kHz)之情形，係每1/R(msec)會有一個雷射脈衝(亦稱為單位脈衝光)從雷射光源發出。在載置有被加工物10之載台4以速度V(mm/sec)移動之情形，在從發出某雷射脈衝至發出次一雷射脈衝之期間，由於被加工物10係移動V×(1/R)=V/R(μm)， 因此某雷射脈衝之光束中心位置與次一發出之雷射脈衝之光束中心位置之間隔、亦即光束點中心間隔Δ(μm)係以Δ=V/R決定。 As shown in Fig. 2, in the case where the repetitive frequency of the laser light LB is R (kHz), a laser pulse (also referred to as unit pulse light) is emitted from the laser light source every 1/R (msec). In the case where the stage 4 on which the workpiece 10 is placed is moved at the speed V (mm/sec), the workpiece 10 is moved by V × during the period from the issuance of a certain laser pulse to the emission of the next laser pulse. (1/R)=V/R(μm), Therefore, the distance between the center position of the beam of a certain laser pulse and the center position of the beam of the next outgoing laser pulse, that is, the center distance Δ(μm) of the beam point is determined by Δ=V/R.

由上述可知，在雷射光LB之光束徑(亦稱為光束腰部(beam Waist)徑、點尺寸)Db與光束點中心間隔Δ滿足Δ>Db……(式1)之情形下，於雷射光之掃描時各個雷射脈衝不會重疊。 As described above, in the case where the beam diameter (also referred to as beam waist diameter and dot size) Db of the laser light LB and the beam spot center distance Δ satisfy Δ>Db (Expression 1), the laser light is emitted. Each laser pulse does not overlap during scanning.

進而，若將單位脈衝光之照射時間亦即脈衝寬度設定為極短，則在各個單位脈衝光之被照射位置中會產生一現象，亦即較雷射光LB之點尺寸狹窄之存在於被照射位置之大致中央區域之物質，會因從被照射之雷射光得到運動能量而往垂直於被照射面之方向飛散或變質，另一方面包含伴隨此飛散而產生之反作用力在內之因單位脈衝光之照射而產生之衝擊或應力係作用於該被照射位置之周圍。 Further, when the irradiation time of the unit pulse light, that is, the pulse width is set to be extremely short, a phenomenon occurs in the irradiation position of each unit pulse light, that is, the point size narrower than the point of the laser light LB is irradiated. The substance in the approximate central region of the position will scatter or deteriorate in the direction perpendicular to the illuminated surface due to the kinetic energy obtained from the irradiated laser light, and on the other hand, the unit pulse including the reaction force generated by the scattering. The impact or stress generated by the irradiation of light acts around the illuminated position.

利用上述各點，若使從雷射光源陸續發出之雷射脈衝(單位脈衝光)沿加工預定線依序且離散地照射，則會在沿著加工預定線之各個單位脈衝光之被照射位置依序形成微小之加工痕，在各個加工痕彼此之間連續地形成龜裂，進而龜裂亦伸展於被加工物之厚度方向。如此，藉由龜裂伸展加工而形成之龜裂，成為分割被加工物10時之分割起點。此外，在雷射光LB為既定(非為0)之散焦值之情形下、以散焦狀態照射之情形，係在焦點位置近旁產生變質，此種產生變質之區域成為上述之加工痕。 With each of the above points, if the laser pulses (unit pulse light) successively emitted from the laser light source are sequentially and discretely irradiated along the planned line, the irradiated position of the pulse light of each unit along the planned line is irradiated. A minute processing mark is formed in sequence, and cracks are continuously formed between the respective processing marks, and the crack also extends in the thickness direction of the workpiece. In this way, the crack formed by the crack stretching process becomes the starting point of the division when the workpiece 10 is divided. Further, in the case where the laser light LB is a predetermined (non-zero) defocus value and is irradiated in a defocused state, deterioration occurs in the vicinity of the focus position, and such a deteriorated region becomes the above-described processing mark.

接著，能藉由使用例如公知之裂斷裝置，進行使藉由龜裂伸展加工而形成之龜裂伸展至具有圖案之基板W之相反面的裂斷步驟，而能分割被加工物10。此外，藉由龜裂伸展而被加工物10在厚度方向被完全 分斷之情形，雖不需要上述之裂斷步驟，但由於即使一部分之龜裂到達相反面，單藉由龜裂伸展使被加工物10完全被二分之情形係屬罕見，因此一般係會伴隨裂斷步驟。 Then, the workpiece 10 can be divided by a cracking step of stretching the crack formed by the crack stretching process to the opposite surface of the patterned substrate W by using, for example, a known cracking device. In addition, the workpiece 10 is completely in the thickness direction by crack propagation. In the case of breaking, although the above-mentioned cracking step is not required, even if a part of the crack reaches the opposite side, it is rare that the workpiece 10 is completely divided by the crack extension, and therefore it is generally accompanied. Breaking step.

裂斷步驟，例如係使被加工物10呈形成有加工痕之側之主面成為下側之姿勢，且以兩個下側裂斷桿支撐分割預定線兩側之狀態下，往另一主面且係緊挨分割預定線上方之裂斷位置使上側裂斷桿降下，藉此來進行。 In the breaking step, for example, the main surface of the workpiece 10 having the side on which the machining mark is formed is in the lower side, and the two lower side split rods are supported to support both sides of the predetermined line, and the other main The surface is placed next to the fracture position above the predetermined line to lower the upper split rod, thereby performing.

此外，若相當於加工痕之節距之光束點中心間隔Δ過大，則裂斷特性會變差而無法實現沿著加工預定線之裂斷。在龜裂伸展加工時，必須考慮到此點來決定加工條件。 Further, if the center distance Δ of the beam spot corresponding to the pitch of the processing marks is too large, the cracking characteristics are deteriorated and the crack along the planned line cannot be obtained. When cracking and stretching is performed, this point must be taken into consideration to determine the processing conditions.

鑑於以上各點，在進行為了於被加工物10形成作為分割起點之龜裂之龜裂伸展加工時最佳之條件，大致如下所述。具體之條件可依被加工物10之材質或厚度等來適當選擇。 In view of the above, the optimum conditions for forming the crack stretching process for forming the crack as the starting point of the workpiece 10 are as follows. The specific conditions can be appropriately selected depending on the material or thickness of the workpiece 10 and the like.

脈衝寬度τ：1psec以上50psec以下；光束徑Db：約1μm~10μm左右；載台移動速度V：50mm/sec以上3000mm/sec以下；脈衝之反覆頻率R：10kHz以上200kHz以下；脈衝能量E：0.1μJ~50μJ。 Pulse width τ: 1 psec or more and 50 psec or less; beam diameter Db: about 1 μm to 10 μm; stage moving speed V: 50 mm/sec or more and 3000 mm/sec or less; pulse repetition frequency R: 10 kHz or more and 200 kHz or less; pulse energy E: 0.1 μJ~50μJ.

<具有圖案之基板> <Substrate with pattern>

其次，說明作為被加工物10之一例之具有圖案之基板W。圖3係具有圖案之基板W之示意俯視圖及部分放大圖。 Next, a substrate W having a pattern as an example of the workpiece 10 will be described. 3 is a schematic plan view and a partial enlarged view of a substrate W having a pattern.

所謂具有圖案之基板W，例如係於藍寶石等單結晶基板(晶圓、母基板)W1(參照圖4)之一主面上積層形成既定之元件圖案而成者。元件圖案，具有在被單片化後將分別構成一個元件晶片之複數個單位圖案UP二維地反覆配置之構成。例如LED元件等作為光學元件或電子元件之單位圖案UP被二維地反覆。 The substrate W having a pattern is formed by laminating a predetermined element pattern on one main surface of a single crystal substrate (wafer, mother substrate) W1 (see FIG. 4) such as sapphire. The element pattern has a configuration in which a plurality of unit patterns UP each constituting one element wafer are repeatedly arranged two-dimensionally after being singulated. For example, an LED element or the like is a two-dimensionally repeated unit pattern UP as an optical element or an electronic element.

又，具有圖案之基板W雖在俯視下呈大致圓形，但於外周之一部分具備直線狀之定向平面(orientation flat)OF。以後，將在具有圖案之基板W之面內定向平面OF之延伸方向稱為X方向，將正交於X方向之方向稱為Y方向。 Further, the patterned substrate W has a substantially circular shape in plan view, but has a linear orientation flat OF at one of the outer circumferences. Hereinafter, the direction in which the orientation plane OF is in the plane of the patterned substrate W is referred to as the X direction, and the direction orthogonal to the X direction is referred to as the Y direction.

作為單結晶基板W1，係使用具有70μm~200μm之厚度者。使用100μm厚度之藍寶石單結晶是非常合適之一例。又，元件圖案通常形成為具有數μm左右之厚度。又，元件圖案亦可具有凹凸。 As the single crystal substrate W1, a thickness of 70 μm to 200 μm is used. The use of a single crystal of sapphire having a thickness of 100 μm is a very suitable example. Further, the element pattern is usually formed to have a thickness of about several μm. Further, the element pattern may have irregularities.

例如，只要係LED晶片製造用之具有圖案之基板W，則將由包含GaN(氮化鎵)在內之Ⅲ族氮化物半導體構成之發光層或其他複數個薄膜層磊晶形成於藍寶石單結晶上，進而於該薄膜層上藉由形成LED元件(LED晶片)中構成通電電極之電極圖案而構成。 For example, as long as it is a patterned substrate W for LED wafer fabrication, a light-emitting layer composed of a group III nitride semiconductor including GaN (gallium nitride) or other plural thin film layers is epitaxially formed on a single sapphire crystal. Further, the thin film layer is formed by forming an electrode pattern constituting a current-carrying electrode in the LED element (LED wafer).

此外，在具有圖案之基板W之形成時，作為單結晶基板W1，亦可係使用以在主面內垂直於定向平面之Y方向作為軸而使c面或a面等結晶面之面方位相對主面法線方向傾斜數度左右之所謂賦予傾斜角(off angle)之基板(亦稱為off基板)。 Further, when the substrate W having the pattern is formed, as the single crystal substrate W1, the plane direction of the crystal face such as the c-plane or the a-plane may be used as the axis in the Y-direction perpendicular to the orientation plane in the main surface. A substrate (also referred to as an off substrate) that imparts an off angle by tilting the normal direction of the principal surface by a few degrees.

各個單位圖案UP之邊界部分即寬度狹窄之區域被稱為切割道ST。切割道ST係在具有圖案之基板W之分割預定位置，藉由在後述 態樣中沿切割道ST被照射雷射光，而使具有圖案之基板W被分割成各個元件晶片。切割道ST通常為數十μm左右之寬度，設定為在俯視元件圖案時呈格子狀。不過，在切割道ST之部分中單結晶基板W1不需要露出，在切割道ST之位置構成元件圖案之薄膜層亦可連續形成。 A boundary portion of each unit pattern UP, that is, a region having a narrow width is referred to as a scribe line ST. The scribe line ST is at a predetermined position of the substrate W having the pattern, as will be described later. In the aspect, the laser beam is irradiated along the scribe line ST, and the patterned substrate W is divided into individual element wafers. The scribe line ST is usually a width of about several tens of μm, and is set to have a lattice shape when the element pattern is viewed in plan. However, in the portion of the scribe line ST, the single crystal substrate W1 does not need to be exposed, and the film layer constituting the element pattern at the position of the scribe line ST may be continuously formed.

<具有圖案之基板中之龜裂伸展與加工位置之偏置> <Offset of crack extension and processing position in patterned substrate>

以下，考量為了沿切割道ST分割如上述之具有圖案之基板W，沿設定於切割道ST中心之加工預定線PL進行龜裂伸展加工之情形。 In the following, it is considered that the substrate W having the pattern as described above is divided along the scribe line ST, and the crack stretching process is performed along the processing planned line PL set at the center of the scribe line ST.

此外，本實施形態中，在進行上述態樣之龜裂伸展加工時，係向具有圖案之基板W中未設有元件圖案之側之面、亦即單結晶基板W1露出之主面Wa(參照圖4)照射雷射光LB。亦即，將形成有元件圖案之側之主面Wb(參照圖4)作為被載置面載置固定於雷射加工裝置100之載台4，來進行雷射光LB之照射。此外，更詳言之，雖於元件圖案表面存在凹凸，但由於該凹凸較具有圖案之基板W整體之厚度充分地小，因此實質上視為於具有圖案之基板W之形成元件圖案之側具備平坦之主面亦無問題。或者，亦可將設有元件圖案之單結晶基板W1之主面視為具有圖案之基板W之主面Wb。 Further, in the present embodiment, when the crack propagation processing of the above-described aspect is performed, the surface of the substrate W having the pattern on the side where the element pattern is not provided, that is, the main surface Wa on which the single crystal substrate W1 is exposed is exposed (refer to Figure 4) Irradiation of the laser light LB. In other words, the main surface Wb (see FIG. 4) on the side where the element pattern is formed is placed on the stage 4 of the laser processing apparatus 100 as the surface to be mounted, and the laser light LB is irradiated. Further, in more detail, although the surface of the element pattern has irregularities, since the unevenness is sufficiently smaller than the thickness of the entire substrate W having the pattern, it is substantially regarded as being provided on the side of the patterned substrate W on which the element pattern is formed. There is no problem with the flat main surface. Alternatively, the main surface of the single crystal substrate W1 provided with the element pattern may be regarded as the main surface Wb of the substrate W having the pattern.

此點在龜裂伸展加工實施中雖本質上並非必須之態樣，但在切割道ST之寬度較小之情形或薄膜層形成至切割道ST之部分之情形等，從縮小雷射光之照射對元件圖案造成之影響或更確實地實現分割之觀點來看則為較佳態樣。此外，圖3中之所以以虛線表示單位圖案UP或切割道ST，係為了顯示單結晶基板露出之主面Wa為雷射光之照射對象面，且設有元件圖案之主面Wb朝向其相反側。 This point is not essential in the implementation of the crack stretching process, but in the case where the width of the scribe line ST is small or the film layer is formed to the portion of the scribe line ST, the irradiation of the laser light is reduced. A preferred aspect is the point of view of the effect of the component pattern or the fact that the segmentation is actually achieved. In addition, in FIG. 3, the unit pattern UP or the scribe line ST is indicated by a broken line in order to show that the main surface Wa exposed by the single crystal substrate is the irradiation target surface of the laser light, and the main surface Wb provided with the element pattern faces the opposite side. .

又，龜裂伸展加工係在對雷射光LB賦予既定之(非為0)之散焦值之散焦狀態下進行。此外，散焦值相較於具有圖案之基板W厚度為充分小。 Further, the crack stretching process is performed in a defocused state in which a predetermined (not zero) defocus value is given to the laser light LB. Further, the defocus value is sufficiently smaller than the thickness of the substrate W having the pattern.

圖4，係顯示在雷射加工裝置100中，設定了使龜裂伸展產生之照射條件後，沿設定於切割道ST(延伸於與定向平面OF正交之Y方向)之中心位置之加工預定線PL照射雷射光LB來進行龜裂伸展加工時之在具有圖案之基板W之厚度方向之龜裂伸展之樣子的示意剖面圖。此外，以下將具有圖案之基板W之主面Wa亦稱為具有圖案之基板W之表面，將具有圖案之基板W之主面Wb亦稱為具有圖案之基板W之背面。 4 is a view showing a processing schedule in the center position of the scribe line ST (extending in the Y direction orthogonal to the orientation plane OF) after the irradiation condition for causing the crack extension is set in the laser processing apparatus 100. A schematic cross-sectional view of a state in which the line PL is irradiated with the laser beam LB to perform crack propagation in the thickness direction of the substrate W having the pattern. In addition, hereinafter, the main surface Wa of the patterned substrate W is also referred to as the surface of the patterned substrate W, and the main surface Wb of the patterned substrate W is also referred to as the back surface of the patterned substrate W.

此情形下，在具有圖案之基板W之厚度方向中從主面Wa起數μm~30μm之距離之位置，加工痕M沿Y軸方向離散地形成，龜裂在各個加工痕M之間伸展，且龜裂CR1及龜裂CR2分別從加工痕M往上方(主面Wa之側)及下方(主面Wb之側)伸展。 In this case, in the thickness direction of the substrate W having the pattern, the position of the distance from the main surface Wa is several μm to 30 μm, the processing marks M are discretely formed along the Y-axis direction, and the cracks are stretched between the respective processing marks M. The crack CR1 and the crack CR2 are respectively extended from the processing mark M to the upper side (the side of the main surface Wa) and the lower side (the side of the main surface Wb).

不過，此等龜裂CR1及CR2，並非往加工痕M之鉛直上方或下方、亦即沿著從加工預定線PL延伸於具有圖案之基板W之厚度方向之面P1伸展，而是以相對面P1傾斜、越從加工痕M離開則越從面P1偏移之態樣伸展。而且，在X方向中，龜裂CR1與龜裂CR2從面P1偏移之方向係相反。 However, the cracks CR1 and CR2 are not stretched directly above or below the lead of the processing mark M, that is, along the surface P1 extending from the planned line PL in the thickness direction of the patterned substrate W, but in the opposite direction. P1 is inclined, and the more it leaves from the processing mark M, the more the surface P1 is displaced. Further, in the X direction, the direction in which the crack CR1 and the crack CR2 are offset from the plane P1 is opposite.

進而，當以此種態樣，龜裂CR1及CR2一邊傾斜一邊伸展時，依其傾斜之程度，會產生如圖4所示，龜裂CR2之終端T(亦包含藉由其後之裂斷步驟而伸展之情形)超過切割道ST之範圍，而伸展至構成元件晶片之單位圖案UP之部分。若如此以龜裂CR1及CR2伸展之處作為起點 進行裂斷，則單位圖案UP會破損，元件晶片成為不良品。而且，從過去經驗可知，此種龜裂之傾斜，只要係在具有相同圖案之基板W中於相同方向進行加工，則在其他加工位置亦同樣地會產生。若在各個切割道ST中產生此種在厚度方向之龜裂之傾斜，進而引起單位圖案UP之破壞，則會導致良品之元件晶片之擷取個數(良率)降低。 Further, in this manner, when the cracks CR1 and CR2 are stretched while being inclined, depending on the degree of inclination, the terminal T of the crack CR2 as shown in Fig. 4 (including the break by the subsequent crack) The step of stretching is over the range of the scribe line ST and extends to the portion of the unit pattern UP constituting the element wafer. If so, use the crack CR1 and CR2 extension as a starting point. When the crack is performed, the unit pattern UP is broken, and the element wafer becomes a defective product. Further, it has been known from past experience that the inclination of such a crack is similarly generated in other processing positions as long as it is processed in the same direction in the substrate W having the same pattern. When the inclination of the crack in the thickness direction occurs in each of the scribe lines ST, and the unit pattern UP is broken, the number of defective component chips (yield ratio) is lowered.

為了避免此種不良情形之產生，本實施形態中，係使雷射光LB之照射位置從作為加工位置之加工預定線PL之設定位置偏置以使龜裂CR2之終端T位在切割道ST之範圍內。 In order to avoid such a problem, in the present embodiment, the irradiation position of the laser beam LB is offset from the set position of the processing planned line PL as the processing position so that the terminal T position of the crack CR2 is at the scribe line ST. Within the scope.

圖5係顯示使雷射光LB之照射位置IP從圖4所示之加工預定線PL往以箭頭AR1所示之-X方向偏置而進行龜裂伸展加工時之具有圖案之基板W在厚度方向之龜裂伸展之樣子的示意剖面圖。如圖5所示，只要使雷射光LB之照射位置IP偏置，則可避免單位圖案UP之破壞。 5 is a view showing the substrate W having the pattern in the thickness direction when the irradiation position IP of the laser light LB is offset from the processing planned line PL shown in FIG. 4 to the -X direction indicated by the arrow AR1 to perform the crack stretching process. A schematic cross-sectional view of the cracked stretch. As shown in FIG. 5, if the irradiation position of the laser light LB is IP-biased, the destruction of the unit pattern UP can be avoided.

不過，圖5中，雖龜裂CR2之終端T2位於緊挨加工預定線PL下方，但此並非必須之態樣，只要終端T2收在切割道ST之範圍內即可。 However, in Fig. 5, although the terminal T2 of the crack CR2 is located immediately below the planned line PL, this is not essential, as long as the terminal T2 is received within the range of the scribe line ST.

又，圖5中，往單位圖案UP不存在之主面Wa側伸展之龜裂CR1之終端T1雖未收在切割道ST之範圍內，但只要非足以對元件晶片功能造成影響之顯著傾斜，則不立即判斷為不良情形。例如，只要元件晶片之形狀收在預先規定之容許範圍內，則如圖5所示之龜裂CR1之傾斜可被容許。 Further, in FIG. 5, the terminal T1 of the crack CR1 extending toward the main surface Wa side where the unit pattern UP does not exist is not included in the range of the scribe line ST, but as long as it is not sufficiently inclined to affect the function of the element wafer, Then it is not immediately judged as a bad situation. For example, as long as the shape of the element wafer is within a predetermined allowable range, the inclination of the crack CR1 as shown in FIG. 5 can be tolerated.

此外，由過去經驗可知，如上述之龜裂之傾斜，係僅在對具有圖案之基板W沿與其定向平面OF正交之Y方向進行龜裂伸展加工時產生之現象，在沿與定向平面OF平行之X方向進行龜裂伸展加工時不會產 生。亦即，在沿X方向進行龜裂伸展加工之情形，具有圖案之基板W在厚度方向之龜裂之伸展，係從加工痕往鉛直上方及鉛直下方產生。 In addition, it is known from past experience that the inclination of the crack as described above is a phenomenon which occurs only when the substrate W having a pattern is subjected to a crack stretching process in the Y direction orthogonal to the orientation plane OF thereof, and along the orientation plane OF. Parallel X direction does not produce crack propagation processing Health. That is, in the case where the crack stretching process is performed in the X direction, the crack of the patterned substrate W in the thickness direction is generated from the processing mark to the vertical upper side and the vertical direction.

<偏置條件之設定> <Setting of bias conditions>

(第1態樣) (1st aspect)

如上所述，在對具有圖案之基板W進行龜裂伸展加工而欲單片化之情形，在進行與定向平面OF正交之Y方向之加工時，有時必須使雷射光LB之照射位置偏置。在此情形中會成為問題者，雖圖4及圖5中龜裂CR1往-X方向傾斜伸展，龜裂CR2往+X方向傾斜伸展，但此不過是例示，而係兩者之伸展方向會因各個具有圖案之基板W而替換，以及在各個具有圖案之基板W中龜裂之傾斜會朝向哪個方向產生若不實際照射雷射光LB進行龜裂伸展加工則不會得知。若不知至少傾斜之方向，則實際上並無法進行使照射位置偏置之動作。 As described above, in the case where the substrate W having the pattern is subjected to the crack stretching process and is to be singulated, it is necessary to bias the irradiation position of the laser light LB when performing the Y direction orthogonal to the orientation plane OF. Set. In this case, it will become a problem. Although the crack CR1 is inclined in the -X direction in FIG. 4 and FIG. 5, the crack CR2 is inclined to extend in the +X direction, but this is merely an example, and the extension direction of the two will be It is replaced by the substrate W having the pattern, and in which direction the inclination of the crack is generated in each of the patterned substrates W is not known if the laser beam LB is not actually irradiated and cracked and stretched. If the direction of the tilt is not known at all, the operation of biasing the irradiation position cannot be actually performed.

進而，在元件晶片之量產過程中，從生產性提升之觀點來看，被要求自動地且盡可能迅速地設定用以偏置之條件。 Further, in the mass production process of the element wafer, it is required to automatically and as quickly set the condition for biasing from the viewpoint of productivity improvement.

圖6係顯示基於以上各點之本實施形態之雷射加工裝置100中進行之偏置條件之設定處理流程的圖。本實施形態之偏置條件之設定處理，概略地說，係對欲單片化之具有圖案之基板W一部分進行龜裂伸展加工，藉由影像處理特定出因該加工之結果而產生之龜裂之傾斜之方向後，在該被特定出之方向中賦予預先設定之偏置量(距離)。此種偏置條件之設定處理，係藉由以雷射加工裝置100之控制器1所具備之偏置設定部26依據儲存於記憶部3之程式3p，使裝置各部動作，且進行必要之運算處理等來實現。 Fig. 6 is a view showing a flow of a setting process of an offset condition performed in the laser processing apparatus 100 according to the embodiment of the present invention. In the setting process of the bias condition of the present embodiment, a part of the substrate W having a pattern to be singulated is subjected to crack propagation processing, and cracking due to the result of the processing is specified by image processing. After the direction of the tilt, a predetermined offset amount (distance) is given in the specified direction. The setting process of the bias condition is performed by the offset setting unit 26 included in the controller 1 of the laser processing apparatus 100 in accordance with the program 3p stored in the storage unit 3, and the necessary operations are performed, and necessary operations are performed. Processing, etc. to achieve.

此外，在進行此設定處理前，預先使具有圖案之基板W載置固定於雷射加工裝置100之載台4上且進行對準處理使其X方向與Y方向分別與移動機構4m之移動方向即水平二軸方向一致。對準處理，除了能適用專利文獻1所揭示之手法以外，亦可適當地適用公知之手法。又，於被加工物資料D1記述有作為加工對象之具有圖案之基板W之個體資訊。 Further, before performing the setting process, the patterned substrate W is placed and fixed on the stage 4 of the laser processing apparatus 100 in advance, and the alignment process is performed so that the X direction and the Y direction are respectively moved to the moving direction of the moving mechanism 4m. That is, the horizontal two axes are in the same direction. In the alignment process, in addition to the technique disclosed in Patent Document 1, a well-known technique can be suitably applied. Further, individual information of the substrate W having the pattern to be processed is described in the workpiece data D1.

首先，先決定進行偏置設定用之龜裂伸展加工之位置(雷射光LB之照射位置)(步驟STP1)，對該位置照射雷射光LB以進行龜裂伸展加工(步驟STP2)。其後，將上述偏置設定用之龜裂伸展加工稱為暫態加工。 First, the position of the crack propagation processing for the offset setting (the irradiation position of the laser beam LB) is determined (step STP1), and the laser beam LB is irradiated to the position to perform the crack stretching process (step STP2). Thereafter, the crack stretching process for the above-described offset setting is referred to as transient processing.

此種暫態加工，最好係在其加工結果不會對元件晶片之擷取個數產生影響之位置進行。例如，最好係將在具有圖案之基板W中不形成作為元件晶片之單位圖案UP之外緣位置等作為對象來進行。圖7係例示考量到此點之暫態加工時之雷射光LB之照射位置IP1的圖。圖7中，係例示較在X方向之位置座標為最負之切割道ST(ST1)更靠向具有圖案之基板W之外緣處(X方向負之側)設定暫態加工用之照射位置IP1之情形。此外，圖7中，雖係將照射位置IP1橫越具有圖案之基板W之兩個外周端位置來顯示，但並不需在橫越兩外周端位置之間之全範圍照射雷射光LB。 Such transient processing is preferably performed at a position where the processing result does not affect the number of pickups of the component wafer. For example, it is preferable to perform the target position of the unit pattern UP which is not the element wafer in the substrate W having the pattern, and the like. Fig. 7 is a view exemplifying the irradiation position IP1 of the laser light LB at the time of transient processing at this point. In Fig. 7, it is exemplified that the irradiation position for transient processing is set to the outer edge of the patterned substrate W (the negative side in the X direction) more than the ruin track ST (ST1) whose position is the most negative in the X direction. The case of IP1. Further, in FIG. 7, although the irradiation position IP1 is displayed across the two outer peripheral end positions of the patterned substrate W, it is not necessary to irradiate the laser beam LB over the entire range between the positions of the two outer peripheral ends.

具體之照射位置IP1之設定方法並無特別限定。例如，亦可係根據預先被賦予之與具有圖案之基板W形狀相關之資料來進行之態樣，或者藉由影像處理特定出切割道ST(ST1)之位置並根據其特定結果來進行之態樣。 The method of setting the specific irradiation position IP1 is not particularly limited. For example, it may be performed according to a material previously associated with the shape of the substrate W having the pattern, or by specifying the position of the scribe line ST (ST1) by image processing and performing the state according to the specific result thereof. kind.

在對照射位置IP1之暫態加工結束後，接著在藉由下部照明光源S2對具有圖案之基板W賦予來自主面Wb側之透射照明之狀態下，以 使CCD攝影機6a之焦點位置(高度)對準於此時之具有圖案之基板W表面即主面Wa之狀態拍攝暫態加工之加工位置(步驟STP3)。接著，藉由對所取得之攝影影像進行既定處理，來決定可視為在龜裂CR1之主面Wa中之終端T1在X方向之代表座標位置的座標X1(步驟STP4)。 After the transient processing of the irradiation position IP1 is completed, the transmission light from the main surface Wb side is applied to the patterned substrate W by the lower illumination light source S2. The processing position of the transient processing is photographed by aligning the focus position (height) of the CCD camera 6a with the main surface Wa of the surface of the patterned substrate W at this time (step STP3). Then, by performing predetermined processing on the acquired photographic image, the coordinate X1 which can be regarded as the representative coordinate position of the terminal T1 in the X direction in the main surface Wa of the crack CR1 is determined (step STP4).

圖8係用以說明基於在步驟STP3取得之具有圖案之基板W之攝影影像IM1之座標X1之決定方法的圖。 FIG. 8 is a view for explaining a method of determining the coordinates X1 of the photographic image IM1 based on the patterned substrate W obtained in step STP3.

更詳言之，圖8(a)係顯示在步驟STP3取得之攝影影像IM1中雷射光LB之照射位置IP1近旁之部分。該攝影影像IM1中，加工痕M被觀察為在Y方向延伸之微小點列或大致連續線。又，從此種加工痕M往主面Wa伸展之龜裂CR1係以較加工痕M強之對比(以更高之像素值，具體而言即更黑)被觀察。此外，之所以龜裂CR1之對比較加工痕M強，係因龜裂CR1存在於較加工痕M更接近CCD攝影機6a之焦點位置處之故。 More specifically, FIG. 8(a) shows a portion in the vicinity of the irradiation position IP1 of the laser beam LB in the photographic image IM1 obtained in step STP3. In the photographic image IM1, the processing mark M is observed as a minute dot row or a substantially continuous line extending in the Y direction. Further, the crack CR1 extending from the processing mark M toward the main surface Wa is observed in comparison with the processing mark M (in a higher pixel value, specifically, more black). Further, the reason why the crack CR1 is stronger than the processing mark M is because the crack CR1 exists closer to the focus position of the CCD camera 6a than the processed mark M.

基於以此方式取得之攝影影像IM1之座標X1之決定，係設定於Y方向具有長度方向且包含此等加工痕M及龜裂CR1之像在內之既定矩形區域RE1，並作成將該矩形區域RE1中之X座標為相同位置之像素值(色濃度值)沿Y方向加以積算而成之設定檔，藉此來進行。圖8(b)所示者，係以圖8(a)所示之攝影影像IM1為對象藉由上述積算處理而取得之設定檔PF1。 The determination of the coordinate X1 of the photographic image IM1 obtained in this way is set to a predetermined rectangular area RE1 having a longitudinal direction in the Y direction and including the image of the processing mark M and the crack CR1, and is formed into the rectangular area. The X coordinate in RE1 is performed by integrating the pixel value (color density value) at the same position in the Y direction. As shown in FIG. 8(b), the set image PF1 obtained by the above-described integration processing is taken as the captured image IM1 shown in FIG. 8(a).

如上所述，圖8(a)所示之攝影影像IM1，由於係將焦點對準於主面Wa而取得者，因此可知，龜裂CR1越多存在之位置且龜裂CR1越接近主面Wa之處，在圖8(b)所示之設定檔PF1中像素值就越高。因此，本實施形態中，係將該設定檔PF1中像素值為最大之座標X1視為龜裂CR1 之終端T1在X方向之座標位置。 As described above, since the photographic image IM1 shown in FIG. 8(a) is obtained by focusing on the main surface Wa, it is understood that the more the crack CR1 exists and the closer the crack CR1 is to the main surface Wa Where, the pixel value is higher in the setting file PF1 shown in Fig. 8(b). Therefore, in the present embodiment, the coordinate X1 in which the pixel value in the setting file PF1 is the largest is regarded as the crack CR1. The terminal T1 is at the coordinate position in the X direction.

以此方式決定座標X1後，其次，與拍攝攝影影像IM1時同樣地，在藉由下部照明光源S2對具有圖案之基板W賦予來自主面Wb側之透射照明之狀態下，以使CCD攝影機6a之焦點位置(高度)對準於加工痕M之深度位置、亦即龜裂伸展加工時之雷射光LB之焦點位置之狀態拍攝該加工位置(步驟STP5)。接著，藉由對所取得之攝影影像進行既定處理，來決定可視為加工痕M在X方向之代表座標位置的座標X2(步驟STP6)。 After the coordinate X1 is determined in this manner, the CCD camera 6a is placed in the state in which the substrate W having the pattern is provided with the transmission illumination from the main surface Wb side by the lower illumination light source S2 in the same manner as in the case of the photographic image IM1. The focus position (height) is aligned with the depth position of the processing mark M, that is, the state of the focus position of the laser light LB during the crack stretching process, and the processing position is captured (step STP5). Then, by performing predetermined processing on the acquired photographic image, the coordinate X2 which can be regarded as the representative coordinate position of the processing mark M in the X direction is determined (step STP6).

圖9係用以說明基於在步驟STP5取得之具有圖案之基板W之攝影影像IM2之座標X2之決定方法的圖。 FIG. 9 is a view for explaining a method of determining the coordinates X2 of the photographic image IM2 based on the patterned substrate W obtained in step STP5.

更詳言之，圖9(a)係顯示在步驟STP5取得之攝影影像IM2中雷射光LB之照射位置IP1近旁之部分。與圖9(a)所示之攝影影像IM1同樣地，在該攝影影像IM2中，加工痕M被觀察為在Y方向延伸之微小點列或大致連續線，又，亦觀察到從此加工痕M往主面Wa伸展之龜裂CR1。不過，藉由攝影時之焦點位置設定於加工痕M之深度位置，而在攝影影像IM2中，被觀察到加工痕M之對比較攝影影像IM1強。 More specifically, FIG. 9(a) shows a portion in the vicinity of the irradiation position IP1 of the laser light LB in the photographic image IM2 obtained in step STP5. Similarly to the photographic image IM1 shown in FIG. 9(a), in the photographic image IM2, the processing mark M is observed as a minute dot row or a substantially continuous line extending in the Y direction, and a processing mark M is also observed from this. The crack CR1 stretched toward the main surface Wa. However, since the focus position at the time of photographing is set at the depth position of the processing mark M, in the photographic image IM2, it is observed that the processed mark M is stronger than the comparative photographic image IM1.

基於以此方式取得之攝影影像IM2之座標X2之決定，係與步驟STP4中之龜裂CR1之終端T1之決定方法同樣地，設定於Y方向具有長度方向且包含加工痕M及龜裂CR1之像在內之既定矩形區域RE2，並作成將該矩形區域RE2中之X座標為相同位置之像素值(色濃度值)沿Y方向加以積算而成之設定檔，藉此來進行。圖9(b)所示者，係以圖9(a)所示之攝影影像IM2為對象藉由上述積算處理而取得之設定檔PF2。此外，矩形區域RE2與矩形區域RE1可設定為相同尺寸，亦可視各個攝影影像中加工痕M 或龜裂CR1之存在位置而使其兩者相異。 The determination of the coordinate X2 of the photographic image IM2 obtained in this manner is set to have a longitudinal direction in the Y direction and includes the processing mark M and the crack CR1 in the same manner as the method of determining the terminal T1 of the crack CR1 in the step STP4. The predetermined rectangular area RE2 is formed, and the X-coordinate in the rectangular area RE2 is set as a profile in which the pixel values (color density values) at the same position are integrated in the Y direction. As shown in FIG. 9(b), the set image PF2 obtained by the above-described integration processing is taken as the captured image IM2 shown in FIG. 9(a). In addition, the rectangular area RE2 and the rectangular area RE1 can be set to the same size, and the visible mark M can also be seen in each photographic image. Or crack the location of CR1 to make it different.

如上所述，圖9(a)所示之攝影影像IM2，由於係將焦點對準於加工痕M之深度位置而取得者，因此可知，越接近加工痕M之處，在圖9(b)所示之設定檔PF2中像素值就越高。因此，本實施形態中，係將該設定檔PF2中像素值為最大之座標X2視為加工痕M在X方向之座標位置。 As described above, the photographic image IM2 shown in Fig. 9(a) is obtained by focusing on the depth position of the processing mark M. Therefore, it is understood that the closer to the processing mark M, the Fig. 9(b) The pixel value in the set file PF2 shown is higher. Therefore, in the present embodiment, the coordinate X2 in which the pixel value in the setting file PF2 is the largest is regarded as the coordinate position of the processing mark M in the X direction.

此外，步驟STP3~STP6所示之處理之執行順序亦可適當替換，亦可適當並行進行。例如，亦可在連續進行步驟STP3及步驟STP5之攝影處理後，依序進行步驟STP4及步驟STP6之座標X1、X2之特定處理，亦可在步驟STP3之攝影處理後，進行步驟STP4之座標X1之特定處理之期間，與此並行地進行步驟STP5之攝影處理。 Further, the order of execution of the processes shown in steps STP3 to STP6 may be appropriately replaced or may be performed in parallel as appropriate. For example, after the photographic processing of step STP3 and step STP5 is continuously performed, the specific processing of coordinates X1 and X2 of step STP4 and step STP6 may be sequentially performed, or the coordinate X1 of step STP4 may be performed after the photographic processing of step STP3. During the specific processing, the photographing process of step STP5 is performed in parallel with this.

藉由以上態樣決定座標X1及X2之值後，接著，算出此等座標值之差分值ΔX=X2-X1，根據其結果特定出應進行偏置之方向(步驟STP7)。 After determining the values of the coordinates X1 and X2 in the above manner, the difference value ΔX=X2-X1 of the coordinate values is calculated, and the direction in which the offset should be performed is specified based on the result (step STP7).

具體而言，ΔX與偏置方向之間有以下之關係。 Specifically, there is the following relationship between ΔX and the bias direction.

ΔX>0→終端T1到達較加工痕M更靠+X方向→往-X方向偏置；ΔX<0→終端T1到達較加工痕M更靠-X方向→往+X方向偏置；ΔX=0→終端T1到達緊挨加工痕M上方→不需偏置。 ΔX>0→terminal T1 reaches the +X direction to the more processed mark M→offset to the −X direction; ΔX<0→end T1 reaches the more processed mark M and is offset by the −X direction→to the +X direction; ΔX= 0→Terminal T1 reaches above the processing mark M → no offset is required.

只要是圖8及圖9所示之情形，由於ΔX<0，因此被特定為應往+X方向偏置。 As long as it is the case shown in Figs. 8 and 9, since ΔX < 0, it is specified to be offset in the +X direction.

藉由如上述特定偏置方向，接著，根據儲存於記憶部3之被加工物資料D1與照射位置偏置資料D3，決定對被特定出之偏置方向之偏置量(步驟STP8)。 By the specific offset direction as described above, the offset amount to the specific bias direction is determined based on the workpiece data D1 stored in the memory unit 3 and the irradiation position offset data D3 (step STP8).

如上所述，於被加工物資料D1記述有實際作為加工對象(亦即已進行偏置設定用之龜裂伸展加工)之具有圖案之基板W之個體資訊(結晶方位、厚度等)。另一方面，於照射位置偏置資料D3預先有能依照具有圖案之基板W之個體資訊設定偏置量之記述。偏置設定部26係從被加工物資料D1取得具有圖案之基板W之個體資訊，並參照照射位置偏置資料D3決定與該個體資訊對應之偏置量。 As described above, the individual information (crystal orientation, thickness, and the like) of the patterned substrate W actually being processed (that is, the crack stretching process for offset setting) is described in the workpiece data D1. On the other hand, in the irradiation position offset data D3, there is previously described the offset amount that can be set in accordance with the individual information of the substrate W having the pattern. The offset setting unit 26 acquires the individual information of the substrate W having the pattern from the workpiece data D1, and determines the offset amount corresponding to the individual information with reference to the irradiation position offset data D3.

此外，從照射位置偏置資料D3之記述內容決定之偏置量，經驗上係賦予只要以其值使雷射光LB之照射位置對加工位置偏置則大部分之情形可避免如圖4所示之龜裂CR2導致單位圖案UP之破壞之值。例如，只要是有具有圖案之基板W厚度越大則龜裂之傾斜之程度亦越大之傾向，則設想於照射位置偏置資料D3以具有圖案之基板W厚度越大則設定越大之偏置量之方式來記述等的對應。 Further, the offset amount determined from the description of the irradiation position offset data D3 is empirically given as long as the irradiation position of the laser light LB is offset from the machining position by the value thereof, and most of the cases can be avoided as shown in FIG. The crack CR2 causes the value of the destruction of the unit pattern UP. For example, as long as the thickness of the substrate W having the pattern is larger, the degree of inclination of the crack tends to be larger, and it is assumed that the irradiation position bias data D3 is set to be larger as the thickness of the substrate W having the pattern is larger. The correspondence is described in terms of the amount of the measurement.

照射位置偏置資料D3之形式並無特別限定。例如可係將照射位置偏置資料D3作成依每一具有圖案之基板W之材質種類或厚度範圍記述有應設定之偏置量之表之態樣，或係厚度與偏置量規定為某函數關係之態樣。 The form of the irradiation position offset data D3 is not particularly limited. For example, the irradiation position offset data D3 may be described as a table in which the offset amount to be set is described in accordance with the material type or thickness range of each patterned substrate W, or the thickness and the offset amount are defined as a function. The aspect of the relationship.

又，由上述之決定方法可清楚得知，偏置量之決定，由於能與以步驟STP1~STP7進行之偏置方向之特定無關係地進行，因此不一定要在特定出偏置方向後再決定，亦可係在偏置方向之特定前或與偏置方向 之特定並行地進行之態樣。 Moreover, it is clear from the above-described determination method that the determination of the offset amount can be performed in a specific relationship with the bias direction in steps STP1 to STP7, so that it is not necessary to specify the offset direction. Decide, either before or in the bias direction The specific aspect of the parallel implementation.

在步驟STP7之偏置方向之決定與在步驟STP8之偏置量之決定後，偏置設定處理即結束。接續於此，根據所決定之偏置方向及偏置量進行用以將具有圖案之基板W單片化之龜裂伸展加工處理。藉此，可實現非常良好地抑制了因龜裂伸展導致之單位圖案UP之破壞之具有圖案之基板W之單片化。 After the determination of the bias direction of step STP7 and the determination of the offset amount at step STP8, the offset setting process ends. Following this, a crack stretching process for singulating the patterned substrate W is performed based on the determined bias direction and offset amount. Thereby, it is possible to achieve singulation of the patterned substrate W which suppresses the destruction of the unit pattern UP due to crack propagation very well.

此外，原理上雖能根據以步驟STP7算出之ΔX之值設定偏置量或將ΔX本身設定為偏置量，但採用此種態樣亦不一定會提升偏置量之設定精度。其原因在於，以上述態樣決定之座標X1或X2，就其算出原理而言，不完全可說是能正確地代表龜裂CR1之終端T1或加工痕M之實際位置之值，由於單單是為了決定偏置方向而權宜地求出之值，因此其差分值ΔX不見得可在該具有圖案之基板W之所有加工中賦予適當之偏置量。 Further, in principle, the offset amount can be set based on the value of ΔX calculated in step STP7 or ΔX itself can be set as the offset amount, but this aspect does not necessarily increase the setting accuracy of the offset amount. The reason is that the coordinate X1 or X2 determined in the above-described manner is not completely arguably the value of the actual position of the terminal T1 or the processing mark M which can correctly represent the crack CR1, since it is simply Since the value is determined exponentially in order to determine the bias direction, the difference value ΔX does not necessarily give an appropriate offset amount in all processing of the patterned substrate W.

(第2態樣) (the second aspect)

雷射加工裝置100之偏置條件之設定處理方法不限於上述之第1態樣。圖10係顯示第2態樣之偏置條件之設定處理流程的圖。圖10所示之第2態樣之設定處理，除了在取代圖6所示之第1態樣中之設定處理之步驟STP3及步驟STP4而進行步驟STP13及步驟STP14這點、以及伴隨於此地於步驟STP7之差分值之算出所使用之座標值與第1設定處理不同這點以外，其餘均與第1設定處理相同。 The setting processing method of the bias condition of the laser processing apparatus 100 is not limited to the first aspect described above. Fig. 10 is a view showing a flow of a setting process of a bias condition of the second aspect. The setting process of the second aspect shown in FIG. 10 is performed in addition to steps STP3 and STP14 in place of the setting process STP3 and step STP4 in the first aspect shown in FIG. The coordinate values used for the calculation of the difference value in step STP7 are the same as those in the first setting process except for the first setting process.

具體而言，第2態樣中，在藉由步驟STP1~步驟STP2進行暫態加工後，在藉由下部照明光源S2對具有圖案之基板W賦予來自主面 Wb側之透射照明之狀態下，以使CCD攝影機6a之焦點位置(高度)對準於此時之具有圖案之基板W背面即主面Wb之狀態拍攝已進行暫態加工之位置(步驟STP13)。接著，藉由對所取得之攝影影像進行基於圖8所說明之與決定龜裂CR1之終端T1之影像處理相同之影像處理，來決定可視為在龜裂CR2之主面Wb中之終端T2在X方向之代表座標位置的座標X3(步驟STP14)。具體而言，係作成與圖8(b)之設定檔PF1相同之設定檔，並將其中像素值最大之座標X3視為龜裂CR2之終端T2之位置。 Specifically, in the second aspect, after the transient processing is performed by the steps STP1 to STP2, the substrate W having the pattern is given the main surface by the lower illumination light source S2. In the state of the transmission illumination on the Wb side, the position where the focus position (height) of the CCD camera 6a is aligned with the main surface Wb which is the back surface of the patterned substrate W at this time is taken to capture the position where the transient processing has been performed (step STP13). . Next, by performing the same image processing as the image processing of the terminal T1 for determining the crack CR1 described with reference to FIG. 8, the terminal T2 that can be regarded as being in the main surface Wb of the crack CR2 is determined. The coordinate X3 representing the coordinate position in the X direction (step STP14). Specifically, the same profile as the profile PF1 of FIG. 8(b) is created, and the coordinate X3 in which the pixel value is the largest is regarded as the position of the terminal T2 of the crack CR2.

接著，接續於此步驟進行步驟STP5~步驟STP6之處理求出座標X2後，在步驟STP7中算出ΔX=X2-X3，根據其結果特定出應進行偏置之方向(偏置方向)(步驟STP7)。 Then, after the process of steps STP5 to STP6 is performed in this step to obtain the coordinate X2, ΔX=X2-X3 is calculated in step STP7, and the direction (offset direction) to be biased is specified based on the result (step STP7). ).

具體而言，ΔX與偏置方向之間有以下之關係。 Specifically, there is the following relationship between ΔX and the bias direction.

ΔX>0→終端T2到達較加工痕M更靠-X方向→往+X方向偏置；ΔX<0→終端T2到達較加工痕M更靠+X方向→往-X方向偏置；ΔX=0→終端T2到達緊挨加工痕M下方→不需偏置。 ΔX>0→terminal T2 reaches the -X direction→offset to the +X direction; ΔX<0→end T2 reaches the +X direction→offset to the -X direction; ΔX= 0→Terminal T2 reaches below the processing mark M → no offset is required.

又，偏置量之設定只要與第1態樣同樣地進行即可。 Further, the setting of the offset amount may be performed in the same manner as in the first aspect.

第2態樣之情形亦與第1態樣同樣地，在步驟STP7之偏置方向之決定與在步驟STP8之偏置量之決定後，偏置設定處理即結束，接續於此，根據所決定之偏置方向及偏置量進行用以將具有圖案之基板W單片化之龜裂伸展加工處理。藉此，可實現非常良好地抑制了因龜裂伸展導致 之單位圖案UP之破壞之具有圖案之基板W之單片化。 Similarly to the first aspect, in the same manner as in the first aspect, after the determination of the bias direction of step STP7 and the determination of the offset amount in step STP8, the offset setting processing is terminated, and the determination is continued based on the determination. The offset direction and the offset amount are subjected to a crack stretching process for singulating the patterned substrate W. Thereby, it is possible to achieve very good suppression of cracking and stretching. The singulation of the patterned substrate W by the destruction of the unit pattern UP.

如以上所說明，根據本實施形態，在藉由龜裂伸展加工將具有圖案之基板單片化時，在與定向平面正交之方向之加工中龜裂會傾斜的情形，由於能藉由在使雷射光之照射位置偏置後進行該龜裂伸展加工，來抑制龜裂之傾斜，因此，可非常良好地抑制將設於具有圖案之基板之構成各個元件晶片之單位圖案單片化時產生破壞。其結果，提升藉由將具有圖案之基板單片化而取得之元件晶片之良率。 As described above, according to the present embodiment, when the substrate having the pattern is diced by the crack stretching process, the crack is inclined in the process orthogonal to the orientation plane, since By performing the crack stretching process by offsetting the irradiation position of the laser light and suppressing the inclination of the crack, it is possible to very satisfactorily suppress the occurrence of the unit pattern of the respective element wafers provided on the patterned substrate. damage. As a result, the yield of the element wafer obtained by singulating the patterned substrate is improved.

Claims (6)

一種雷射加工裝置，其具備：射出源，射出雷射光；載台，能固定具有圖案之基板，該具有圖案之基板係於單結晶基板上將複數個單位元件圖案二維地反覆配置而成；能藉由使前述射出源與前述載台相對移動以將前述雷射光一邊沿既定之加工預定線掃描、一邊照射於前述具有圖案之基板，其特徵在於：能執行龜裂伸展加工，其係以藉由前述雷射光之各個單位脈衝光而形成於前述具有圖案之基板之加工痕沿前述加工預定線位於離散處之方式照射前述雷射光，使龜裂從各個前述加工痕於前述具有圖案之基板伸展；且進一步具備攝影手段，能拍攝載置於前述載台之前述具有圖案之基板；以及偏置條件設定手段，係設定偏置條件，該偏置條件係用以在前述龜裂伸展加工時使前述雷射光之照射位置從前述加工預定線偏置；前述偏置條件設定手段，在將前述具有圖案之基板之一部分位置設定為前述偏置條件設定用之前述龜裂伸展加工之執行位置，對前述執行位置進行前述偏置條件設定用之前述龜裂伸展加工即暫態加工後，使前述攝影手段拍攝在使焦點對準於前述具有圖案之基板表面之狀態下拍攝前述暫態加工之前述執行位置而取得第1攝影影像，且在使焦點對準於已進行前述暫態加工時之前述雷射光之焦點位置之狀態下拍攝前述暫態加工之前述執行位置而取得第2攝影影像； 根據從前述第1攝影影像特定之從藉由前述暫態加工形成之加工痕伸展之龜裂之終端之位置座標與根據從前述第2攝影影像特定之前述暫態加工之加工痕之位置座標之差分值，在前述龜裂伸展加工時特定應使前述雷射光之照射位置偏置之方向。 A laser processing apparatus comprising: an emission source for emitting laser light; and a stage capable of fixing a substrate having a pattern, wherein the patterned substrate is formed by two-dimensionally overlapping a plurality of unit element patterns on a single crystal substrate. The substrate having the pattern can be irradiated while the projection light is moved relative to the stage to scan the predetermined laser beam along the predetermined planned line, and the crack stretching process can be performed. Irradiating the laser light so that the processing marks formed on the patterned substrate by the respective unit pulse lights of the laser light are located at discrete points along the planned processing line, and causing cracks from the respective processing marks to the aforementioned pattern And extending the substrate; further comprising: a photographing means capable of photographing the patterned substrate placed on the stage; and bias setting means for setting a bias condition for the crack stretching process And irradiating the irradiation position of the laser light from the predetermined processing line; the bias condition setting means The position of one part of the substrate of the pattern is set to the execution position of the crack propagation process for setting the bias condition, and the above-described execution position is subjected to the above-described process of setting the offset condition, that is, the transient processing, and then the photographing is performed. Taking the image by capturing the execution position of the transient processing in a state in which the surface of the substrate having the pattern is focused to obtain the first image, and the focus is on the aforementioned Ray when the transient processing has been performed. Acquiring the execution position of the transient processing in a state where the focus position of the light is emitted to obtain the second photographic image; a position coordinate of a terminal end of the crack extending from the processing mark formed by the transient processing from the first photographic image, and a position coordinate of the processing mark according to the transient processing specified from the second photographic image The difference value specifies a direction in which the irradiation position of the laser light is biased in the crack propagation processing. 如申請專利範圍第1項之雷射加工裝置，其中，前述偏置條件設定手段，根據藉由在前述第1攝影影像與前述第2攝影影像之各個中沿前述暫態加工時之加工方向積算像素值而取得之積算設定檔，特定在前述暫態加工時產生之前述龜裂之終端之位置座標與前述暫態加工時之前述加工痕之位置座標。 The laser processing apparatus according to claim 1, wherein the bias condition setting means is integrated with each other in the processing direction of the transient processing in each of the first image and the second image. The integrated set value obtained by the pixel value specifies the position coordinates of the end of the crack generated at the time of the transient processing and the position coordinate of the processing mark at the time of the transient processing. 如申請專利範圍第1或2項之雷射加工裝置，其中，前述偏置條件設定手段，係根據預先取得之作為前述龜裂開始點加工之對象之前述具有圖案之基板之個體資訊，決定在前述龜裂伸展加工時使前述雷射光之照射位置從前述加工預定線偏置時之偏置量。 The laser processing apparatus according to claim 1 or 2, wherein the bias condition setting means determines the individual information of the substrate having the pattern which is the target of the crack initiation point processing obtained in advance. The amount of offset when the irradiation position of the laser light is offset from the predetermined processing line during the crack stretching process. 一種具有圖案之基板之加工條件設定方法，係設定進行加工時之加工條件之方法，該加工係藉由對於單結晶基板上將複數個單位元件圖案二維地反覆配置而成之具有圖案之基板照射雷射光以將前述具有圖案之基板單片化，其特徵在於：將前述具有圖案之基板單片化之加工，係以藉由前述雷射光之各個單位脈衝光而形成於前述具有圖案之基板之加工痕沿前述加工預定線位於離散處之方式照射前述雷射光，使龜裂從各個前述加工痕於前述具有圖案之基板伸展之龜裂伸展加工；且具備：偏置條件設定步驟，係在前述龜裂開始點加工前，設定用 以在前述龜裂伸展加工時使前述雷射光之照射位置從前述加工預定線偏置之偏置條件；前述偏置條件設定步驟，具備：暫態加工步驟，在將前述具有圖案之基板之一部分位置設定為前述偏置條件設定用之前述龜裂伸展加工之執行位置，對前述執行位置進行前述偏置條件設定用之前述龜裂伸展加工即暫態加工；攝影步驟，使既定之攝影手段拍攝在使焦點對準於前述具有圖案之基板表面之狀態下拍攝前述暫態加工之前述執行位置而取得第1攝影影像，且在使焦點對準於已進行前述暫態加工時之前述雷射光之焦點位置之狀態下拍攝前述暫態加工之前述執行位置而取得第2攝影影像；以及偏置方向特定步驟，根據從前述第1攝影影像特定之從藉由前述暫態加工形成之加工痕伸展之龜裂之終端之位置座標與根據從前述第2攝影影像特定之前述暫態加工之加工痕之位置座標之差分值，在前述龜裂伸展加工時特定應使前述雷射光之照射位置偏置之方向。 A method for setting a processing condition of a patterned substrate is a method of setting a processing condition at the time of processing, wherein the processing is performed by patterning a plurality of unit element patterns two-dimensionally on a single crystal substrate Irradiating the laser light to singulate the patterned substrate, wherein the processing of the substrate having the pattern is performed on the substrate having the pattern by pulse light of each unit of the laser light The processing mark irradiates the laser light so that the crack is stretched from each of the processing marks on the patterned substrate, and the step of setting the bias condition is performed in a manner that the predetermined processing line is located at a discrete position. Before the crack start point is processed, set a biasing condition for biasing an irradiation position of the laser light from the processing target line during the crack stretching process; and the biasing condition setting step includes: a transient processing step of arranging a portion of the patterned substrate The position is set to an execution position of the crack propagation process for setting the bias condition, and the cracking process, that is, the transient processing for setting the bias condition, is performed on the execution position; and the photographing step is performed by a predetermined photographing means Acquiring the execution position of the transient processing in a state where the focus is on the surface of the substrate having the pattern to obtain the first image, and focusing on the laser light when the transient processing has been performed a second captured image is obtained by capturing the execution position of the transient processing in a state of a focus position; and an offset direction specifying step is performed from a processing mark formed by the transient processing from the first captured image. The position coordinates of the terminal of the crack and the position of the processing mark according to the aforementioned transient processing specified from the second photographic image The difference value of the coordinates is specified in the direction in which the irradiation position of the laser light is biased during the crack propagation processing. 如申請專利範圍第4項之具有圖案之基板之加工條件設定方法，其中，前述偏置方向特定步驟中，根據藉由在前述第1攝影影像與前述第2攝影影像之各個中沿前述暫態加工時之加工方向積算像素值而取得之積算設定檔，特定在前述暫態加工時產生之前述龜裂之終端之位置座標與前述暫態加工時之前述加工痕之位置座標。 The processing condition setting method of the patterned substrate according to claim 4, wherein the offset direction specifying step is based on the transient state in each of the first photographic image and the second photographic image The integrated set value obtained by integrating the pixel values in the processing direction during processing specifies the position coordinates of the end of the crack generated at the time of the transient processing and the position coordinates of the processing mark at the time of the transient processing. 如申請專利範圍第4或5項之具有圖案之基板之加工條件設定方法，其中，前述偏置條件設定步驟，進一步具備根據預先取得之作為前述龜裂開始點加工之對象之前述具有圖案之基板之個體資訊，決定在前述龜裂 伸展加工時使前述雷射光之照射位置從前述加工預定線偏置時之偏置量。 The processing condition setting method of the patterned substrate according to the fourth or fifth aspect of the invention, wherein the bias condition setting step further includes the substrate having the pattern which is obtained as the target of the crack initiation point acquired in advance Individual information, decided to crack in the aforementioned The amount of offset when the irradiation position of the laser light is biased from the predetermined processing line during the stretching process.
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