TW201416159A - An electrophoretic cutting system and a method of fabricating electrophoretic cutting carrier - Google Patents
An electrophoretic cutting system and a method of fabricating electrophoretic cutting carrier Download PDFInfo
- Publication number
- TW201416159A TW201416159A TW101139451A TW101139451A TW201416159A TW 201416159 A TW201416159 A TW 201416159A TW 101139451 A TW101139451 A TW 101139451A TW 101139451 A TW101139451 A TW 101139451A TW 201416159 A TW201416159 A TW 201416159A
- Authority
- TW
- Taiwan
- Prior art keywords
- cutting
- abrasive
- carrier
- electrophoretic
- cutting carrier
- Prior art date
Links
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本發明係一種電泳式切割系統與電泳式切割載體製作方法,特別是針對具有硬脆材質或高硬度金屬材料的基材進行切割的系統與製作切割載體的方法。 The invention relates to an electrophoresis cutting system and an electrophoresis cutting carrier manufacturing method, in particular to a system for cutting a substrate having a hard and brittle material or a high hardness metal material and a method for preparing a cutting carrier.
在太陽能產業中,矽晶圓之製造過程基本上係包含長晶(Grown)、去頭尾(Cropping)、開方(S/Bricking)、切割(Sawing)與清洗(Clean)等製程步驟。 In the solar industry, the manufacturing process of germanium wafers basically includes process steps such as Grown, Cropping, S/Bricking, Sawing, and Clean.
其中,利用線鋸進行該切割係為一般常用的方式,且該切割作業在整個矽晶圓形成過程中佔有十分重要的地位,因該線鋸的切割製程將決定矽晶圓於切割後之厚度與表面的品質等因素,而該等因素將更進一步決定該矽晶圓之後續製程的困難度和複雜度。 Among them, the use of a wire saw for the cutting is a commonly used method, and the cutting operation plays an important role in the formation of the entire wafer, because the cutting process of the wire saw determines the thickness of the wafer after cutting. Factors such as the quality of the surface, and these factors will further determine the difficulty and complexity of the subsequent process of the wafer.
傳統的線鋸切割主要可區分為游離磨料和固定磨料的二種方式。又,因為游離磨料之方式具有成本低、磨料可回收以及切割出之表面較符合後段太陽能模組之製程等優點,因而使應用游離磨料之方式大量地使用於該線鋸切割作業中。 Traditional wire saw cutting can be divided into two ways: free abrasive and fixed abrasive. Moreover, since the method of free abrasive has the advantages of low cost, recyclable abrasive, and the surface of the cut is more in line with the process of the solar module of the rear stage, the use of the free abrasive is widely used in the wire saw cutting operation.
然而,在習知的該游離磨料之製程當中,其所使用之漿料係為乙二醇(Ethylene Glycol)和碳化矽(SiC)所混 合而成,而通常漿料之黏度和乙二醇之化學成分可能會造成漿料附著於該線鋸上線材表面的厚度不一致,進而造成該線鋸切割的切口損失(Kerf Loss)不同。 However, in the conventional process of the free abrasive, the slurry used is mixed with ethylene glycol (Ethylene Glycol) and tantalum carbide (SiC). In general, the viscosity of the slurry and the chemical composition of the ethylene glycol may cause the thickness of the slurry to adhere to the surface of the wire saw to be inconsistent, thereby causing a difference in the Kerf Loss of the wire saw cutting.
有鑑於上述的缺失,如何提出一種有效的系統與方法來解決習知技術的缺點,已是目前重要且極欲解決的課題。 In view of the above-mentioned shortcomings, how to propose an effective system and method to solve the shortcomings of the prior art has become an important and extremely problem to be solved.
本發明之一目的係提供一種電泳式切割載體製作方法,用以形成切割載體而達到對基材進行切割加工的目的。 An object of the present invention is to provide a method for fabricating an electrophoretic cutting carrier for forming a cutting carrier for the purpose of cutting a substrate.
本發明之另一目的係提供一種電泳式切割系統,係透過電泳游離沉積方式將磨料附著於可對該基材進行切割的切割載體,而降低在對該基材進行切割時所造成切口損失的目的。 Another object of the present invention is to provide an electrophoretic cutting system for attaching an abrasive to a cutting carrier capable of cutting the substrate by electrophoretic free deposition, thereby reducing the loss of the slit caused by cutting the substrate. purpose.
本發明之又一目的係提供上述的該電泳式切割系統,可應用於傳統的游離磨料與固定磨料切割的技術,並可搭配不同的磨料和懸浮液,藉由電場的方式控制該磨料沉積在該切割載體之膜厚,用以達到彈性地與均勻地控制薄膜厚度及提高磨料使用率之目的。 Still another object of the present invention is to provide the electrophoretic cutting system described above, which can be applied to a conventional technique of free abrasive and fixed abrasive cutting, and can be combined with different abrasives and suspensions to control the deposition of the abrasive by an electric field. The film thickness of the cutting carrier is used for the purpose of elastically and uniformly controlling the film thickness and increasing the abrasive usage rate.
為達到上述目的及其它目的,本發明係提供一種電泳式切割載體製作方法,係形成切割載體以應用於基材 的切割加工,該電泳式加工方法的步驟係包含,步驟(a),係調和介質、解離劑與結合劑,以形成懸浮溶液;接著步驟(b),係結合磨料與該懸浮溶液,並在該懸浮溶液與該磨料施加第一電極;在接著步驟(c),係設置切割載體並在該切割載體施加第二電極,以在該懸浮溶液與該磨料之間形成電場並在該切割載體的鄰近部分產生該磨料的電泳沉積;以及,又在接著步驟(d),係該磨料之其中一部分附著至該切割載體,以使該切割載體具有該磨料。 In order to achieve the above and other objects, the present invention provides an electrophoretic cutting carrier manufacturing method for forming a cutting carrier for use in a substrate. The cutting process, the step of the electrophoretic processing method comprises, step (a), adjusting the medium, the dissociating agent and the binding agent to form a suspension solution; and then the step (b), combining the abrasive with the suspension solution, and The suspension solution and the abrasive are applied with a first electrode; in the following step (c), a cutting carrier is disposed and a second electrode is applied to the cutting carrier to form an electric field between the suspension solution and the abrasive and in the cutting carrier An adjacent portion produces electrophoretic deposition of the abrasive; and, in addition to step (d), a portion of the abrasive is attached to the cutting carrier such that the cutting carrier has the abrasive.
為達到上述目的及其它目的,本發明係提供一種電泳式切割系統,係應用於基材的切割加工,該電泳式切割系統包含容置槽、第一電極板、切割載體、第二電極板與傳動單元。其中,該容置槽係形成容置空間,該容置槽係供儲存具有磨料粒子的懸浮溶液;該第一電極板係設置於該容置槽,該第一電極板係具有第一電壓;該切割載體係設置於該容置空間的上方;該第二電極板係與該切割載體電性連接,該第二電極板係於該切割載體形成第二電壓,該第二電壓與該第一電壓的電壓極性相反;以及,該傳動單元,係設置於該容置槽的二側及連接該切割載體,該傳動單元係驅動該切割載體以一位移方向產生移動,用以供該切割載體以該位移方向對該基材進行切割。其中,該第一電極板與該第二電極板係在 該容置空間產生電場,用以對該懸浮溶液中的該磨料粒子產生電泳游離,而讓該磨料粒子之其一部分脫離該懸浮溶液而附著於該切割載體。 In order to achieve the above and other objects, the present invention provides an electrophoretic cutting system for cutting a substrate, the electrophoretic cutting system comprising a receiving groove, a first electrode plate, a cutting carrier, a second electrode plate and Transmission unit. The accommodating groove is configured to store a suspension solution having abrasive particles; the first electrode plate is disposed in the accommodating groove, and the first electrode plate has a first voltage; The cutting carrier is disposed above the accommodating space; the second electrode plate is electrically connected to the cutting carrier, and the second electrode plate is formed on the cutting carrier to form a second voltage, the second voltage and the first The voltage of the voltage is opposite in polarity; and the transmission unit is disposed on two sides of the accommodating groove and connected to the cutting carrier, and the transmission unit drives the cutting carrier to move in a displacement direction for the cutting carrier to The displacement direction dicing the substrate. Wherein the first electrode plate and the second electrode plate are tied The accommodating space generates an electric field for electrophoresis free of the abrasive particles in the suspension solution, and a part of the abrasive particles is detached from the suspension solution to adhere to the cutting carrier.
與習知技術相較,本發明所提供電泳式切割系統及電泳式切割載體製作方法,係藉由磨料進行電泳游離沉積的方式,使得該磨料係可均勻地分布在可供對基材進行切割的切割載體之表面,並提供對該基材進行低切口損失的切割。 Compared with the prior art, the electrophoretic cutting system and the electrophoretic cutting carrier manufacturing method provided by the invention are performed by electrophoretic free deposition of the abrasive, so that the abrasive system can be evenly distributed in the substrate for cutting. Cutting the surface of the carrier and providing a cut for low nicking loss to the substrate.
為充分瞭解本發明之目的、特徵及功效,茲藉由下述具體之實施例,並配合所附之圖式,對本發明做一詳細說明,說明如後:參考第一圖,係本發明一實施例之電泳式切割載體製作方法的製作流程圖。於第一圖中,該電泳式切割工作製作方法係藉由電泳沉積(Electrophoresis Phenomenon)的方式,形成切割載體以對基材進行切割加工。 In order to fully understand the objects, features and advantages of the present invention, the present invention will be described in detail with reference to the accompanying drawings. A flow chart for the production of the electrophoretic cutting carrier of the embodiment. In the first figure, the electrophoretic cutting work manufacturing method forms a cutting carrier to perform cutting processing on a substrate by means of electrophoretic deposition (Electrophoresis Phenomenon).
再者,該電泳沉積係為一種電動現象,即在二個電極(正極與負極)所形成的一均勻電場下,具有電性的粒子將受到電場的作用而產生遷移,進而產生電泳現象並沉積於與該粒子之表面電荷相反之電極上。 Furthermore, the electrophoretic deposition system is an electrokinetic phenomenon, that is, under a uniform electric field formed by two electrodes (positive electrode and negative electrode), the electrically conductive particles will be subjected to an electric field to cause migration, thereby generating electrophoresis and deposition. On the electrode opposite to the surface charge of the particle.
該電泳式切割工作,其起始之製作步驟S11,係為調和介質、解離劑(Charging Agent)與結合劑(Bonding Agent)以形成懸浮溶液。其中,該介質係為水、醇類、酮類或烷類;該解離劑係氫氧化物、氯化物或胺類;而該結合劑係為水溶性樹脂。此外,在電泳沉積的過程中,由於該懸浮溶液內之成分係改變粒子之表面電荷,因此該懸浮溶液的成分係為主要的關鍵。一般而言,在該懸浮溶液中,用以改變粒子表面電荷的物質係為該解離劑,而該解離劑會於該懸浮溶液中解離出分子,並吸附於粒子表面而造成粒子表面電荷之改變。 The electrophoretic cutting operation, the initial production step S11, is a blending medium, a Charging Agent and a Bonding Agent to form a suspension solution. Wherein, the medium is water, an alcohol, a ketone or an alkane; the dissociating agent is a hydroxide, a chloride or an amine; and the binder is a water-soluble resin. In addition, during the electrophoretic deposition, since the components in the suspension solution change the surface charge of the particles, the composition of the suspension solution is the main key. Generally, in the suspension solution, the substance for changing the surface charge of the particles is the dissociating agent, and the dissociating agent dissociates the molecules in the suspension solution and adsorbs on the surface of the particles to cause a change in the surface charge of the particles. .
接著進行步驟S12,其係將磨料與該懸浮溶液結合,並在該懸浮溶液與該磨料中施加第一電極。其中,該磨料的材質係為碳化矽(SiC)、鑽石(Diamond)、立方碳化硼(B4C)、氧化鋁(Al2O3)或氧化鋯(ZrO2)等的硬脆材質,亦或者該磨料的材質亦可為氧化物、碳酸鹽類、錳化物或含鐵氧化物等的高硬度金屬。 Next, step S12 is performed in which an abrasive is combined with the suspension solution, and a first electrode is applied to the suspension solution and the abrasive. The material of the abrasive is a hard and brittle material such as SiC, Diamond, B 4 C, alumina (Al 2 O 3 ) or zirconia (ZrO 2 ). Alternatively, the material of the abrasive may be an oxide, a carbonate, a manganese compound or a high hardness metal such as an iron oxide.
再接著進行步驟S13,其係為設置切割載體並在該切割載體內施加第二電極,以在該懸浮溶液與該磨料之間形成電場,並在該切割載體的鄰近部分產生該磨料的電泳沉積。同時該第二電極的電極性係與該第一電極的電極性相反,例如該第一電極係為負極以供產生負電壓,而該第二電極則為正極以供產生正電壓。 Then proceeding to step S13, which is to set a cutting carrier and apply a second electrode in the cutting carrier to form an electric field between the suspension solution and the abrasive, and to generate electrophoretic deposition of the abrasive in an adjacent portion of the cutting carrier. . At the same time, the polarity of the second electrode is opposite to the polarity of the first electrode. For example, the first electrode is a negative electrode for generating a negative voltage, and the second electrode is a positive electrode for generating a positive voltage.
又接著進行步驟S14,係該磨料之其中一部分將附著至該切割載體,以使得該切割載體具有該磨料。於本步驟中,該磨料係受到該電場的影響而產生電泳游離現象,並進而在該切割載體的表面沉積該磨料。 Step S14 is then followed by attaching a portion of the abrasive to the cutting carrier such that the cutting carrier has the abrasive. In this step, the abrasive system is subjected to electrophoresis by the influence of the electric field, and the abrasive is further deposited on the surface of the cutting carrier.
可一併參考第二圖,於另外一實施例中,在步驟S13與步驟S14之間,更可進一步包含步驟S21,係將該磨料朝該切割載體的表面進行噴塗,以使得該磨料緊密地附著於該切割載體。 Referring to the second figure, in another embodiment, between step S13 and step S14, a step S21 may be further included, the abrasive is sprayed toward the surface of the cutting carrier, so that the abrasive is closely Attached to the cutting carrier.
回到第一圖,於步驟S12與S13中,該第一電極與該第二電極係選用脈波式供應電壓與直流定電壓之至少其一種方式來進行驅動,以產生在電泳沉積時所需之該電場。 Returning to the first figure, in steps S12 and S13, the first electrode and the second electrode are driven by at least one of a pulse wave supply voltage and a direct current voltage to generate the required electrodeposition. The electric field.
參考第三圖,係本發明一實施例之電泳式切割系統的架構示意圖。於第三圖中,該電泳式切割系統10係應用於基材2的切割加工。於本實施例中,該基材2係以矽晶(Silicon Ingot)22與玻璃層24的組合結構為例說明。 Referring to the third figure, there is shown a schematic diagram of the structure of an electrophoretic cutting system according to an embodiment of the present invention. In the third figure, the electrophoretic cutting system 10 is applied to the cutting process of the substrate 2. In the present embodiment, the substrate 2 is exemplified by a combined structure of a twin ingot 22 and a glass layer 24.
其中,該電泳式切割系統10係包含容置槽12、第一電極板14、切割載體16、第二電極板18與傳動單元20。 The electrophoretic cutting system 10 includes a receiving groove 12, a first electrode plate 14, a cutting carrier 16, a second electrode plate 18, and a transmission unit 20.
一併參考第四圖,係為該容置槽的詳細示意圖。其中,該容置槽12係形成一容置空間122,且該容置槽 12係用於儲存具有磨料粒子124的懸浮溶液126。其中,該懸浮溶液126更包含調和介質、解離劑與結合劑。舉例而言,該介質係為水、醇類、酮類或烷類、該解離劑係為氫氧化物、氯化物或胺類,而該結合劑係為水溶性樹脂;該磨料的材質係為碳化矽(SiC)、鑽石(Diamond)、立方碳化硼(B4C)、氧化鋁(Al2O3)或氧化鋯(ZrO2);同時,該磨料的材質係氧化物、碳酸鹽類、錳化物或含鐵氧化物。 Referring to the fourth figure together, it is a detailed schematic diagram of the receiving slot. The accommodating groove 12 is formed to form an accommodating space 122, and the accommodating groove 12 is used for storing the suspension solution 126 having the abrasive particles 124. Wherein, the suspension solution 126 further comprises a blending medium, a dissociating agent and a binding agent. For example, the medium is water, an alcohol, a ketone or an alkane, the dissociating agent is a hydroxide, a chloride or an amine, and the binder is a water-soluble resin; the material of the abrasive is Carbide (SiC), diamond (Diamond), cubic boron carbide (B 4 C), alumina (Al 2 O 3 ) or zirconia (ZrO 2 ); at the same time, the material of the abrasive is oxide, carbonate, Manganese or iron oxide.
該第一電極板14係設置於該容置槽12內,該第一電極板14係具有第一電壓V1。於本實施例中,該第一電壓V1係以負電壓為範例來說明。 The first electrode plate 14 is disposed in the accommodating groove 12, and the first electrode plate 14 has a first voltage V 1 . In the embodiment, the first voltage V 1 is exemplified by a negative voltage.
該切割載體16係設置於該容置空間122的上方。於本實施例中,該切割載體16係以線狀型態為範例來說明。請一併參照第五圖,於另外一實施例中,該切割載體16係亦可為圓狀型態。 The cutting carrier 16 is disposed above the accommodating space 122. In the present embodiment, the cutting carrier 16 is illustrated by taking a linear pattern as an example. Referring to FIG. 5 together, in another embodiment, the cutting carrier 16 may also be in a circular shape.
回到第三圖,該第二電極板18係與該切割載體16電性連接,又該第二電極板18係於該切割載體16形成第二電壓V2,且該第二電壓V2與該第一電壓V1的電壓極性係相反,亦即,該第二電壓V2在此係以正電壓為範例來說明。 Returning to the third figure, the second electrode plate 18 is electrically connected to the cutting carrier 16, and the second electrode plate 18 is connected to the cutting carrier 16 to form a second voltage V 2 , and the second voltage V 2 is The voltage polarity of the first voltage V 1 is opposite, that is, the second voltage V 2 is exemplified by a positive voltage.
該傳動單元20係設置於該容置槽12的二側並與該切割載體16連接,該傳動單元20係用於驅動該切割載 體16,使其朝向一位移方向產生移動,以供該切割載體16以該位移方向對該基材2進行切割。 The transmission unit 20 is disposed on two sides of the accommodating groove 12 and connected to the cutting carrier 16, and the transmission unit 20 is used for driving the cutting load. The body 16 is moved in a direction of displacement for the cutting carrier 16 to cut the substrate 2 in the direction of displacement.
回到第四圖,此外,該第一電極板14與該第二電極板18,會在該容置空間122內產生電場,以對該懸浮溶液126中的該磨料粒子124產生電泳游離,而讓該磨料粒子124之中的一部分,脫離該懸浮溶液126而附著於該切割載體16。 Returning to the fourth figure, in addition, the first electrode plate 14 and the second electrode plate 18 generate an electric field in the accommodating space 122 to generate electrophoresis freeness of the abrasive particles 124 in the suspension solution 126. A portion of the abrasive particles 124 are allowed to adhere to the cutting carrier 16 by being detached from the suspension solution 126.
參考第六圖,其係為本發明的另一實施例之電泳式切割系統的架構示意圖。於第六圖中,該電泳式切割系統10’同樣亦被應用於該基材2的切割加工中,且該電泳式切割系統10’除了包含與前述實施例相同的該容置槽12、該第一電極板14、該切割載體16、該第二電極板18與該傳動單元20以外,更包含輔助單元26與控制單元28。 Referring to a sixth drawing, it is a schematic structural view of an electrophoretic cutting system according to another embodiment of the present invention. In the sixth figure, the electrophoretic cutting system 10' is also applied to the cutting process of the substrate 2, and the electrophoresis cutting system 10' includes the same receiving groove 12 as the previous embodiment. The first electrode plate 14, the cutting carrier 16, the second electrode plate 18 and the transmission unit 20 further include an auxiliary unit 26 and a control unit 28.
該輔助單元26係鄰近地設置於該切割載體16旁,藉以讓該輔助單元26改變該磨料粒子124的行進方向,而將該磨料粒子124導引至該切割載體16的表面。 The auxiliary unit 26 is disposed adjacent to the cutting carrier 16 such that the auxiliary unit 26 changes the direction of travel of the abrasive particles 124 to direct the abrasive particles 124 to the surface of the cutting carrier 16.
該控制單元28係與該傳動單元20連接,該控制單元28係藉著產生直流定電壓與脈波電壓中之至少一者的驅動電壓,以驅動該傳動單元20。舉例而言,該控制單元28係藉由該驅動電壓來控制該傳動單元20,而使得該切割載體16進行移動。 The control unit 28 is coupled to the transmission unit 20, which drives the transmission unit 20 by generating a drive voltage for at least one of a DC constant voltage and a pulse voltage. For example, the control unit 28 controls the transmission unit 20 by the driving voltage to cause the cutting carrier 16 to move.
故本發明所提供電泳式切割系統及電泳式切割載體製作方法,其係藉由該磨料進行電泳游離沉積的方式,以使得該磨料可被均勻地分布在可供對基材進行切割的切割載體之表面,以對該基材提供低切口損失的切割作業。 Therefore, the electrophoretic cutting system and the electrophoretic cutting carrier manufacturing method provided by the present invention are carried out by electrophoretic free deposition of the abrasive, so that the abrasive can be uniformly distributed on the cutting carrier for cutting the substrate. The surface is a cutting operation that provides low kerf loss to the substrate.
本發明在上文中已以較佳實施例揭露,然熟習本項技術者應理解的是,該實施例僅用於描繪本發明,而不應解讀為限制本發明之範圍。應注意的是,舉凡與該實施例等效之變化與置換,均應設為涵蓋於本發明之範疇內。因此,本發明之保護範圍當以下文之申請專利範圍所界定者為準。 The invention has been described above in terms of the preferred embodiments, and it should be understood by those skilled in the art that the present invention is not intended to limit the scope of the invention. It should be noted that variations and permutations equivalent to those of the embodiments are intended to be included within the scope of the present invention. Therefore, the scope of the invention is defined by the scope of the following claims.
2‧‧‧基材 2‧‧‧Substrate
22‧‧‧矽晶 22‧‧‧ crystal
24‧‧‧玻璃層 24‧‧‧ glass layer
10、10’‧‧‧電泳式切割系統 10, 10'‧‧‧ Electrophoresis cutting system
12‧‧‧容置槽 12‧‧‧ accommodating slots
122‧‧‧容置空間 122‧‧‧ accommodating space
124‧‧‧磨料粒子 124‧‧‧Abrasive particles
126‧‧‧懸浮溶液 126‧‧‧suspension solution
14‧‧‧第一電極板 14‧‧‧First electrode plate
16‧‧‧切割載體 16‧‧‧ cutting carrier
18‧‧‧第二電極板 18‧‧‧Second electrode plate
20‧‧‧傳動單元 20‧‧‧Transmission unit
26‧‧‧輔助單元 26‧‧‧Auxiliary unit
28‧‧‧控制單元 28‧‧‧Control unit
V1‧‧‧第一電壓 V 1 ‧‧‧First voltage
V2‧‧‧第二電壓 V 2 ‧‧‧second voltage
S11~S14‧‧‧方法步驟 S11~S14‧‧‧ method steps
S21‧‧‧方法步驟 S21‧‧‧ method steps
第一圖係本發明一實施例之電泳式切割載體製作方法的製作流程圖。 The first figure is a flow chart for making a method for fabricating an electrophoretic cutting carrier according to an embodiment of the present invention.
第二圖係本發明另一實施例之電泳式切割載體製作方法的製作流程圖。 The second drawing is a flow chart for making a method for fabricating an electrophoretic cutting carrier according to another embodiment of the present invention.
第三圖係本發明一實施例之電泳式切割系統的架構示意圖。 The third figure is a schematic structural view of an electrophoretic cutting system according to an embodiment of the present invention.
第四圖係說明第三圖中容置槽的詳細示意圖。 The fourth figure is a detailed schematic diagram of the accommodating groove in the third figure.
第五圖係說明第三圖中切割載體的另一示意圖。 The fifth figure illustrates another schematic view of the cutting carrier in the third figure.
第六圖係本發明另一實施例之電泳式切割系統的 架構示意圖。 The sixth figure is an electrophoretic cutting system according to another embodiment of the present invention. Schematic diagram of the architecture.
S11~S14‧‧‧方法步驟 S11~S14‧‧‧ method steps
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101139451A TW201416159A (en) | 2012-10-25 | 2012-10-25 | An electrophoretic cutting system and a method of fabricating electrophoretic cutting carrier |
JP2013084625A JP2014083678A (en) | 2012-10-25 | 2013-04-15 | Electrophoretic cutting system and manufacturing method of electrophoretic cutting carrier |
CN201310232874.5A CN103774199A (en) | 2012-10-25 | 2013-06-13 | Electrophoresis type cutting system and electrophoresis type cutting carrier manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101139451A TW201416159A (en) | 2012-10-25 | 2012-10-25 | An electrophoretic cutting system and a method of fabricating electrophoretic cutting carrier |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201416159A true TW201416159A (en) | 2014-05-01 |
Family
ID=50566935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101139451A TW201416159A (en) | 2012-10-25 | 2012-10-25 | An electrophoretic cutting system and a method of fabricating electrophoretic cutting carrier |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2014083678A (en) |
CN (1) | CN103774199A (en) |
TW (1) | TW201416159A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107160575A (en) * | 2017-06-06 | 2017-09-15 | 宁波职业技术学院 | A kind of electrostatic spray free abrasive wiresaw cutting method |
CN107186902A (en) * | 2017-06-06 | 2017-09-22 | 宁波职业技术学院 | A kind of electrostatic spray saw blade cutting machine |
CN108466156A (en) * | 2018-02-28 | 2018-08-31 | 浙江工业大学 | A kind of absorption free abrasive grain wiresaw cutting method certainly |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0523963A (en) * | 1991-07-17 | 1993-02-02 | Res Dev Corp Of Japan | Polishing method by means of tape and device thereof |
JPH08197424A (en) * | 1995-01-27 | 1996-08-06 | Ricoh Co Ltd | Machining method by the aid of wire tool and machining device by the aid of wire tool |
CN1162568C (en) * | 2001-07-25 | 2004-08-18 | 中国科学院长春光学精密机械与物理研究所 | Process for preparing selective diamond film |
CN101531035B (en) * | 2009-04-21 | 2014-04-16 | 青岛科技大学 | A method for manufacturing electroplating diamond wire saw |
JP2011067934A (en) * | 2009-08-24 | 2011-04-07 | Noritake Super Abrasive Co Ltd | Fixed abrasive grain wire and method of manufacturing the same |
CN101840823A (en) * | 2010-05-11 | 2010-09-22 | 西北大学 | Preparation method of field emission cathode of large-area nano diamond coating |
JP5641536B2 (en) * | 2011-03-15 | 2014-12-17 | 日本パーカライジング株式会社 | Electrodeposition solution for fixed abrasive saw wire |
CN102517580B (en) * | 2011-12-14 | 2013-10-02 | 燕山大学 | Method for manufacturing porous polishing and grinding tool |
CN102605413B (en) * | 2012-03-21 | 2014-06-11 | 大连理工大学 | Hydrothermal-electrochemical method for preparing diamond film |
-
2012
- 2012-10-25 TW TW101139451A patent/TW201416159A/en unknown
-
2013
- 2013-04-15 JP JP2013084625A patent/JP2014083678A/en active Pending
- 2013-06-13 CN CN201310232874.5A patent/CN103774199A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN103774199A (en) | 2014-05-07 |
JP2014083678A (en) | 2014-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103395002B (en) | A kind of electric discharge machining in gas dressing of bulky diamond emery wheel repaiies neat method | |
CN100348391C (en) | Great diameter SiC monocrystal cutting method | |
TW200539255A (en) | Insulated pad conditional and method of using same | |
CN102909650B (en) | Surface processing method of strip laser medium | |
Wang et al. | Abrasive electrochemical multi-wire slicing of solar silicon ingots into wafers | |
JP2000343525A (en) | Method for cutting/processing semiconductor material | |
JP6598150B2 (en) | Method for producing single crystal SiC substrate | |
TWI540764B (en) | Method for manufacturing ceramic composite for optical conversion | |
CN109877658B (en) | Shear thickening-electrophoresis composite polishing device | |
CN114918742B (en) | Microstructure in-situ grinding and polishing processing device based on electrorheological effect and processing method thereof | |
CN109877657B (en) | Electrochemical thickening and polishing method | |
TW201416159A (en) | An electrophoretic cutting system and a method of fabricating electrophoretic cutting carrier | |
JP2011020197A (en) | Workpiece cutting method | |
JP2004050301A (en) | Wire saw and its manufacturing method | |
JP4258592B2 (en) | Ingot cutting apparatus and method | |
CN202439133U (en) | Diamond fret saw for cutting hard brittle material | |
JP2008161992A (en) | Cutting method for processed member and manufacturing method for wafer | |
WO2020137713A1 (en) | Cutting method and cutting device | |
CN202412498U (en) | Electroplating type fret saw | |
CN209754726U (en) | Shear thickening-electrophoresis composite polishing processing device | |
CN108555700A (en) | A kind of polishing process of silicon carbide wafer | |
CN202439134U (en) | Fretsaw | |
KR20010089212A (en) | Removable electrode | |
Yao et al. | The progress of fixed abrasive wire saws in the last decade | |
US6699105B1 (en) | Method and apparatus for cutting and grinding single crystal SiC |