TW201415685A - OLED lighting apparatus - Google Patents

OLED lighting apparatus Download PDF

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Publication number
TW201415685A
TW201415685A TW101137761A TW101137761A TW201415685A TW 201415685 A TW201415685 A TW 201415685A TW 101137761 A TW101137761 A TW 101137761A TW 101137761 A TW101137761 A TW 101137761A TW 201415685 A TW201415685 A TW 201415685A
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Taiwan
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organic light
wire
layer
substrate
electrode layer
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TW101137761A
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Chinese (zh)
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Chih-Feng Sung
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Ultimate Image Corp
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Priority to TW101137761A priority Critical patent/TW201415685A/en
Priority to CN201310302889.4A priority patent/CN103730599B/en
Priority to US14/041,265 priority patent/US20140103311A1/en
Publication of TW201415685A publication Critical patent/TW201415685A/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/814Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/351Thickness

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

An OLED lighting apparatus includes a substrate, at least one conductive wire, an insulating layer, a first electrode layer, an organic light-emitting layer, and a second electrode layer. The conductive wire is disposed on the substrate and has a top surface away from the substrate. The insulating layer is disposed on the substrate and exposes at least a part of the top surface of the conductive wire. The insulating layer has an upper surface away from the substrate. The first electrode layer is disposed on the upper surface of the insulating layer, and is electrically connected to the conductive wire. The organic light-emitting layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic light-emitting layer. In addition, a manufacturing method of the OLED lighting apparatus is provided.

Description

有機發光二極體照明裝置 Organic light emitting diode lighting device

本發明是有關於一種照明裝置,且特別是有關於一種有機發光二極體照明裝置。 The present invention relates to a lighting device, and more particularly to an organic light emitting diode lighting device.

有機發光二極體具有自發光、低耗電、高反應速率等優點,已吸引了顯示及照明領域應用的廣泛注意。有機發光二極體是以電激發螢光或磷光有機化合物的發光層來產生光線。 Organic light-emitting diodes have the advantages of self-luminescence, low power consumption, high reaction rate, etc., and have attracted extensive attention in the field of display and illumination. The organic light-emitting diode generates light by electrically exciting a fluorescent layer of a fluorescent or phosphorescent organic compound.

現有的有機發光二極體裝置大多是以導電薄膜為電極來傳輸電流至發光層,容易受限於電阻值而難以傳輸大電流,並導致無可避免的功率損失。尤其在照明領域,此問題會更加明顯。因此,為了傳輸大電流,會利用額外的分流電極來輔助大電流的傳送。 Most of the existing organic light-emitting diode devices use a conductive film as an electrode to transmit current to the light-emitting layer, which is easily limited by the resistance value and is difficult to transmit a large current, and causes inevitable power loss. Especially in the field of lighting, this problem will become more apparent. Therefore, in order to transmit a large current, an additional shunt electrode is utilized to assist in the transmission of large currents.

如圖1所示,一種有機發光二極體照明裝置的剖視示意圖。基板11上依序形成有透明電極12以及分流電極13。分流電極13與透明電極12電連接。由於分流電極13的厚度明顯大於透明電極12,利用低阻抗的分流電極13來傳輸大電流,可有效地避免功率損失。 FIG. 1 is a schematic cross-sectional view of an organic light emitting diode illumination device. A transparent electrode 12 and a shunt electrode 13 are sequentially formed on the substrate 11. The shunt electrode 13 is electrically connected to the transparent electrode 12. Since the thickness of the shunt electrode 13 is significantly larger than that of the transparent electrode 12, the low-current shunt electrode 13 is used to transmit a large current, and power loss can be effectively avoided.

然而,由於分流電極13加上絕緣層14的厚度,遠大於有機發光層15或金屬電極16的厚度,導致蒸鍍於基板11上之有機發光層15產生厚度不均勻的現象,並導致後續蒸鍍於有機發光層15上的金屬電極16在轉折處產生裂縫17的現象。 However, since the thickness of the shunt electrode 13 plus the insulating layer 14 is much larger than the thickness of the organic light-emitting layer 15 or the metal electrode 16, the organic light-emitting layer 15 evaporated on the substrate 11 is uneven in thickness, and causes subsequent steaming. The phenomenon in which the metal electrode 16 plated on the organic light-emitting layer 15 generates the crack 17 at the turning point.

本發明的一目的是在提供一種有機發光二極體照明裝置,可解決上述有機發光層之厚度不均及電極在轉折處發生裂縫的問題。 An object of the present invention is to provide an organic light emitting diode illumination device which can solve the problem of uneven thickness of the organic light emitting layer and cracking of the electrode at the turning point.

本發明提出一種有機發光二極體照明裝置,包含一基板、至少一導線、一絕緣層、一第一電極層、一有機發光層,以及一第二電極層。導線位於基板上且具有一遠離基板的頂面。絕緣層位於基板上且露出導線之頂面的至少一部分,且絕緣層具有一遠離基板的上表面。第一電極層覆蓋於絕緣層之上表面上,並且與導線電連接。有機發光層位於第一電極層上。第二電極層位於有機發光層。 The invention provides an organic light emitting diode illumination device comprising a substrate, at least one wire, an insulating layer, a first electrode layer, an organic light emitting layer, and a second electrode layer. The wires are on the substrate and have a top surface remote from the substrate. The insulating layer is on the substrate and exposes at least a portion of the top surface of the wire, and the insulating layer has an upper surface away from the substrate. The first electrode layer covers the upper surface of the insulating layer and is electrically connected to the wires. The organic light emitting layer is on the first electrode layer. The second electrode layer is located on the organic light emitting layer.

在本發明的實施例中,上述絕緣層之上表面大致對齊導線之頂面,且絕緣層之上表面與導線之頂面之高度差小於100nm。 In an embodiment of the invention, the upper surface of the insulating layer is substantially aligned with the top surface of the wire, and the height difference between the upper surface of the insulating layer and the top surface of the wire is less than 100 nm.

在本發明的實施例中,上述第一電極層、有機發光層、以及第二電極層彼此平行地連續延伸。 In an embodiment of the invention, the first electrode layer, the organic light-emitting layer, and the second electrode layer continuously extend in parallel with each other.

在本發明的實施例中,上述該導線是呈直線狀在該基板上延伸。 In an embodiment of the invention, the wire extends linearly on the substrate.

在本發明的實施例中,上述該導線之數量為複數,且該等導線是平行地排列於該基板上。 In an embodiment of the invention, the number of the wires is plural, and the wires are arranged in parallel on the substrate.

本發明的另一目的是在提供一種有機發光二極體照明裝置的製作方法,可解決上述有機發光層之厚度不均及電極在轉折處發生裂縫的問題。 Another object of the present invention is to provide a method for fabricating an organic light-emitting diode illumination device which can solve the problem of uneven thickness of the organic light-emitting layer and cracking of the electrode at the turning point.

本發明提出一種有機發光二極體照明裝置的製作方法,包含以下步驟:首先,提供基板。然後,於基板上形成至少一導線,導線具有一遠離基板的頂面。接著,於基板上形成絕緣層,且絕緣層露出導線之頂面的至少一部分。絕緣層具有一遠離基 板的上表面。然後,形成一覆蓋絕緣層之上表面之第一電極層,且使第一電極層與導線形成電連接。接著,於第一電極層上形成有機發光層。最後,於有機發光層上形成第二電極層。 The invention provides a method for fabricating an organic light emitting diode illumination device, comprising the following steps: First, providing a substrate. Then, at least one wire is formed on the substrate, and the wire has a top surface away from the substrate. Next, an insulating layer is formed on the substrate, and the insulating layer exposes at least a portion of the top surface of the wire. The insulating layer has a distance from the base The upper surface of the board. Then, a first electrode layer covering the upper surface of the insulating layer is formed, and the first electrode layer is electrically connected to the wires. Next, an organic light-emitting layer is formed on the first electrode layer. Finally, a second electrode layer is formed on the organic light-emitting layer.

在本發明的實施例中,更使絕緣層之上表面大致對齊導線之頂面,且使絕緣層之上表面與導線之頂面之高度差小於100nm。 In an embodiment of the invention, the upper surface of the insulating layer is substantially aligned with the top surface of the wire, and the height difference between the upper surface of the insulating layer and the top surface of the wire is less than 100 nm.

在本發明的實施例中,更使第一電極層、有機發光層、以及第二電極層呈現彼此平行地連續延伸。 In an embodiment of the invention, the first electrode layer, the organic light-emitting layer, and the second electrode layer are further extended in parallel with each other.

本發明藉由將第一電極層、有機發光層、以及第二電極層設置於導線及絕緣層上且彼此平行地連續延伸,可解決習知有機發光層之厚度不均及電極在轉折處發生裂縫的問題,並且可以提高有機發光二極體照明裝置之發光均勻性。 The present invention can solve the problem that the thickness of the conventional organic light-emitting layer is uneven and the electrode occurs at the turning point by disposing the first electrode layer, the organic light-emitting layer, and the second electrode layer on the wire and the insulating layer and continuously extending in parallel with each other. The problem of cracks and the uniformity of illumination of the organic light-emitting diode illumination device can be improved.

為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。 The above and other objects, features and advantages of the present invention will become more <RTIgt;

圖2為依據本發明之一實施例之有機發光二極體照明裝置20的剖視示意圖。如圖所示,有機發光二極體照明裝置20包含基板21、導線22、絕緣層23、第一電極層24、有機發光層25,以及第二電極層26。 2 is a cross-sectional view of an organic light emitting diode illumination device 20 in accordance with an embodiment of the present invention. As shown, the organic light-emitting diode illumination device 20 includes a substrate 21, a wire 22, an insulating layer 23, a first electrode layer 24, an organic light-emitting layer 25, and a second electrode layer 26.

基板21為透明的玻璃或塑膠材質。導線22位在基板21上。導線22為金屬材質。導線22具有二由基板21上表面向上延伸的側面220,以及連接二側面220的頂緣且遠離基板21的頂面221。頂面221的至少一部分向上露出於絕緣層23之外。 The substrate 21 is made of transparent glass or plastic. The wire 22 is positioned on the substrate 21. The wire 22 is made of metal. The wire 22 has two side faces 220 extending upward from the upper surface of the substrate 21, and a top edge 221 connecting the top edges of the two side faces 220 away from the substrate 21. At least a portion of the top surface 221 is exposed upward beyond the insulating layer 23.

絕緣層23位於基板21上,並位於導線22的二側且與導 線22的二側面220相接。絕緣層23具有一遠離基板21的上表面231,且絕緣層23之厚度大致等於導線22之厚度,使絕緣層23之上表面231大致對齊於導線22之頂面221。絕緣層23為至少部分透明的無機材質或有機材質。無機材質可為氮化矽或二氧化矽等,而有機材質可為BCB或PC403等聚合物。 The insulating layer 23 is located on the substrate 21 and is located on both sides of the wire 22 and is guided The two sides 220 of the wire 22 meet. The insulating layer 23 has an upper surface 231 away from the substrate 21, and the thickness of the insulating layer 23 is substantially equal to the thickness of the wires 22 such that the upper surface 231 of the insulating layer 23 is substantially aligned with the top surface 221 of the wires 22. The insulating layer 23 is an at least partially transparent inorganic or organic material. The inorganic material may be tantalum nitride or cerium oxide, and the organic material may be a polymer such as BCB or PC403.

第一電極層24覆蓋於導線22之頂面221及絕緣層23的上表面231上。第一電極層24為至少部分透明的透明導電膜,並且與導線22之頂面221形成電連接。有機發光層25覆蓋於第一電極層24上。有機發光層25例如包含電子傳輸層(electron transport layer)、電致發光層(electroluminescent layer)、以及電洞傳輸層(hole transport layer)。第二電極層26位於有機發光層25上。第二電極層26例如為不透光的金屬材質薄膜,或者,亦可為透光的透明導電膜。需特別說明的是,第一電極層24、有機發光層25、以及第二電極層26三者在導線22及絕緣層23的上方彼此平行地連續延伸,沒有斷面及轉折。 The first electrode layer 24 covers the top surface 221 of the wire 22 and the upper surface 231 of the insulating layer 23. The first electrode layer 24 is an at least partially transparent transparent conductive film and is electrically connected to the top surface 221 of the wire 22. The organic light emitting layer 25 covers the first electrode layer 24. The organic light-emitting layer 25 includes, for example, an electron transport layer, an electroluminescent layer, and a hole transport layer. The second electrode layer 26 is on the organic light emitting layer 25. The second electrode layer 26 is, for example, a metal film that is opaque to light, or may be a light-transmissive transparent conductive film. It should be noted that the first electrode layer 24, the organic light-emitting layer 25, and the second electrode layer 26 continuously extend parallel to each other above the wires 22 and the insulating layer 23, and have no cross-section and transition.

當施加電壓時,電流會從導線22流至第一電極層24,再經由有機發光層25至第二電極層26。帶負電的電子由第二電極層26移動至有機發光層25,同時帶正電的電洞會由第一電極層24移動至有機發光層25。當帶負電的電子與帶正電的電洞在有機發光層25相遇,兩者會再結合(recombine)並放出光子,並經由第一電極層24、絕緣層23以及基板21並向外界發出。 When a voltage is applied, current flows from the wire 22 to the first electrode layer 24 and then through the organic light-emitting layer 25 to the second electrode layer 26. The negatively charged electrons are moved from the second electrode layer 26 to the organic light emitting layer 25 while the positively charged holes are moved from the first electrode layer 24 to the organic light emitting layer 25. When the negatively charged electrons and the positively charged holes meet at the organic light-emitting layer 25, the two recombine and emit photons, and are emitted to the outside through the first electrode layer 24, the insulating layer 23, and the substrate 21.

由於導線22之頂面221大致對齊絕緣層23的上表面231,兩者大致可構成一個平整的平面,使第一電極層24、有機發光層25、以及第二電極層26三者在導線22及絕緣層23的上彼此平行地連續延伸,由於沒有轉折,第一電極層24、 有機發光層25、以及第二電極層26三者的厚度均勻且不會導致裂縫的情況發生。藉此,可有效提高有機發光二極體照明裝置20之發光均勻性。 Since the top surface 221 of the wire 22 is substantially aligned with the upper surface 231 of the insulating layer 23, the two may substantially form a flat plane, such that the first electrode layer 24, the organic light-emitting layer 25, and the second electrode layer 26 are on the wire 22. And the upper layers of the insulating layer 23 extend continuously in parallel with each other, since there is no turning, the first electrode layer 24, The thicknesses of the organic light-emitting layer 25 and the second electrode layer 26 are uniform and do not cause cracks. Thereby, the uniformity of illumination of the organic light-emitting diode illumination device 20 can be effectively improved.

適用於製作絕緣層23的形成方式可為蒸鍍、濺鍍等沉積方法,且本發明不以此為限。如圖3所示,不同的沉積方法及沉積時的條件的可能導致絕緣層23之上表面231略低或略高於導線22之頂面221。但需注意的是,絕緣層23之上表面231與導線22之頂面221的高度差可限定在小於100nm,以避免較大轉折導致裂縫的情況發生。 The method for forming the insulating layer 23 may be a deposition method such as vapor deposition or sputtering, and the invention is not limited thereto. As shown in FIG. 3, different deposition methods and conditions at the time of deposition may cause the upper surface 231 of the insulating layer 23 to be slightly lower or slightly higher than the top surface 221 of the wire 22. It should be noted, however, that the difference in height between the upper surface 231 of the insulating layer 23 and the top surface 221 of the wire 22 can be limited to less than 100 nm to avoid the occurrence of cracks due to a large turning.

圖4是依據本發明之一實施例之有機發光二極體照明裝置的上視示意圖。本實施例之有機發光二極體照明裝置大致與圖2的實施例相同,不同之處在於絕緣層23之厚度較導線22為薄,第一電極層24覆蓋絕緣層23之上表面,但並未覆蓋於導線22之頂面221,而是位於導線22之兩側且分別連接至導線22之兩側面220上。 4 is a top plan view of an organic light emitting diode lighting device in accordance with an embodiment of the present invention. The organic light emitting diode illumination device of the present embodiment is substantially the same as the embodiment of FIG. 2, except that the thickness of the insulating layer 23 is thinner than the wire 22, and the first electrode layer 24 covers the upper surface of the insulating layer 23, but The top surface 221 of the wire 22 is not covered, but is located on both sides of the wire 22 and is connected to the two sides 220 of the wire 22, respectively.

在本實施例中,絕緣層23之厚度加上第一電極層24之厚度大致等於導線22之厚度,使導線22之頂面221大致對齊第一電極層24的上表面,導線22之頂面221與第一電極層24之上表面兩者大致可構成一個平整的平面,使有機發光層25以及第二電極層26在導線22及第一電極層24的上方彼此平行地連續延伸,沒有斷面及轉折。 In the present embodiment, the thickness of the insulating layer 23 plus the thickness of the first electrode layer 24 is substantially equal to the thickness of the wire 22 such that the top surface 221 of the wire 22 is substantially aligned with the upper surface of the first electrode layer 24, and the top surface of the wire 22 221 and the upper surface of the first electrode layer 24 can form a flat plane substantially, so that the organic light-emitting layer 25 and the second electrode layer 26 extend continuously parallel to each other above the wire 22 and the first electrode layer 24 without breaking. Face and turning.

圖5是依據本發明之一實施例之有機發光二極體照明裝置20的上視示意圖。在本實施例中,導線22之數量為複數,各導線22為直線狀且平行地排列於基板21上。並且,第一電極層24實際上具有多個分別連接至導線22的電極區塊241。需注意的是,實際實施時,導線22的數量及第一電極層22的 分佈及形狀皆不以圖5所示為限。 FIG. 5 is a top plan view of an organic light emitting diode illumination device 20 in accordance with an embodiment of the present invention. In the present embodiment, the number of the wires 22 is plural, and the wires 22 are linear and arranged in parallel on the substrate 21. Also, the first electrode layer 24 actually has a plurality of electrode blocks 241 that are respectively connected to the wires 22. It should be noted that, in actual implementation, the number of wires 22 and the first electrode layer 22 The distribution and shape are not limited to those shown in FIG.

圖6是依據本發明之一實施例之有機發光二極體照明裝置20之製作方法的流程圖。配合參考圖2及圖6,首先,在步驟110中,提供基板21。接著,在步驟120中,於基板21上形成導線22。然後,在步驟130中,於基板21上形成絕緣層23,且使絕緣層23露出導線22之頂面221的至少一部分。接著,在步驟140中,形成覆蓋導線22之頂面221及絕緣層23之上表面231之第一電極層24,且使第一電極層24與導線22之頂面221形成電連接。然後,在步驟150中,於第一電極層24上形成有機發光層25。最後,在步驟160中,於有機發光層25上形成第二電極層26,即完成本發明實施例之有機發光二極體照明裝置20的製作。 FIG. 6 is a flow chart of a method of fabricating an organic light emitting diode illumination device 20 in accordance with an embodiment of the present invention. Referring to FIG. 2 and FIG. 6, first, in step 110, the substrate 21 is provided. Next, in step 120, a wire 22 is formed on the substrate 21. Then, in step 130, an insulating layer 23 is formed on the substrate 21, and the insulating layer 23 is exposed to at least a portion of the top surface 221 of the wire 22. Next, in step 140, a first electrode layer 24 covering the top surface 221 of the wire 22 and the upper surface 231 of the insulating layer 23 is formed, and the first electrode layer 24 is electrically connected to the top surface 221 of the wire 22. Then, in step 150, an organic light-emitting layer 25 is formed on the first electrode layer 24. Finally, in step 160, the second electrode layer 26 is formed on the organic light-emitting layer 25, that is, the fabrication of the organic light-emitting diode lighting device 20 of the embodiment of the present invention is completed.

綜上所述,本發明至少具有以下優點: In summary, the present invention has at least the following advantages:

由於使導線22之頂面221大致對齊絕緣層23的上表面231或是大致對齊第一電極層24的上表面,兩種作法皆大致可構成一個平整的平面,使有機發光層25以及第二電極層26兩者在導線22及絕緣層23上彼此平行地連續延伸。由於沒有轉折,有機發光層25以及第二電極層26兩者的厚度均勻且不會導致裂縫的情況發生。藉此,可有效提高有機發光二極體照明裝置20之發光均勻性。 Since the top surface 221 of the wire 22 is substantially aligned with the upper surface 231 of the insulating layer 23 or substantially aligned with the upper surface of the first electrode layer 24, both methods can substantially form a flat plane, so that the organic light-emitting layer 25 and the second layer Both of the electrode layers 26 continuously extend in parallel with each other on the wires 22 and the insulating layer 23. Since there is no turning, the thickness of both the organic light-emitting layer 25 and the second electrode layer 26 is uniform and does not cause cracks. Thereby, the uniformity of illumination of the organic light-emitting diode illumination device 20 can be effectively improved.

雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

<先前技術> <Prior technology>

11‧‧‧基板 11‧‧‧Substrate

12‧‧‧透明電極 12‧‧‧Transparent electrode

13‧‧‧分流電極 13‧‧‧Split electrode

14‧‧‧絕緣層 14‧‧‧Insulation

15‧‧‧有機發光層 15‧‧‧Organic light-emitting layer

16‧‧‧金屬電極 16‧‧‧Metal electrodes

17‧‧‧裂縫 17‧‧‧ crack

<實施方式> <Embodiment>

20‧‧‧有機發光二極體照明裝置 20‧‧‧Organic LED lighting device

21‧‧‧基板 21‧‧‧Substrate

22‧‧‧導線 22‧‧‧Wire

220‧‧‧側面 220‧‧‧ side

221‧‧‧頂面 221‧‧‧ top surface

23‧‧‧絕緣層 23‧‧‧Insulation

231‧‧‧上表面 231‧‧‧ upper surface

24‧‧‧第一電極層 24‧‧‧First electrode layer

241‧‧‧電極區塊 241‧‧‧Electrode block

25‧‧‧有機發光層 25‧‧‧Organic light-emitting layer

26‧‧‧第二電極層 26‧‧‧Second electrode layer

圖1為習知有機發光二極體照明裝置的剖視示意圖。 1 is a schematic cross-sectional view of a conventional organic light emitting diode lighting device.

圖2為依據本發明之一實施例之有機發光二極體照明裝置的剖視圖。 2 is a cross-sectional view of an organic light emitting diode illumination device in accordance with an embodiment of the present invention.

圖3為依據本發明之一實施例之有機發光二極體照明裝置的另一剖視圖。 3 is another cross-sectional view of an organic light emitting diode illumination device in accordance with an embodiment of the present invention.

圖4為依據本發明之一實施例之有機發光二極體照明裝置的上視示意圖。 4 is a top plan view of an organic light emitting diode lighting device in accordance with an embodiment of the present invention.

圖5為依據本發明之一實施例之有機發光二極體照明裝置的剖視示意圖。 FIG. 5 is a cross-sectional view of an organic light emitting diode illumination device in accordance with an embodiment of the present invention.

圖6為依據本發明之一實施例之有機發光二極體照明裝置的流程圖。 6 is a flow chart of an organic light emitting diode lighting device in accordance with an embodiment of the present invention.

20‧‧‧有機發光二極體照明裝置 20‧‧‧Organic LED lighting device

21‧‧‧基板 21‧‧‧Substrate

22‧‧‧導線 22‧‧‧Wire

220‧‧‧側面 220‧‧‧ side

221‧‧‧頂面 221‧‧‧ top surface

23‧‧‧絕緣層 23‧‧‧Insulation

231‧‧‧上表面 231‧‧‧ upper surface

24‧‧‧第一電極層 24‧‧‧First electrode layer

25‧‧‧有機發光層 25‧‧‧Organic light-emitting layer

26‧‧‧第二電極層 26‧‧‧Second electrode layer

Claims (10)

一種有機發光二極體照明裝置,包含:一基板;至少一導線,位於該基板上,該導線具有一遠離該基板的頂面;一絕緣層,位於該基板上且露出該頂面的至少一部分,該絕緣層具有一遠離該基板的上表面;一第一電極層,覆蓋於該絕緣層之該上表面上,且與該導線電連接;一有機發光層,位於該第一電極層上;以及一第二電極層,位於該有機發光層上。 An organic light emitting diode lighting device comprising: a substrate; at least one wire on the substrate, the wire having a top surface away from the substrate; an insulating layer on the substrate and exposing at least a portion of the top surface The insulating layer has an upper surface away from the substrate; a first electrode layer covering the upper surface of the insulating layer and electrically connected to the wire; an organic light emitting layer on the first electrode layer; And a second electrode layer on the organic light emitting layer. 如申請專利範圍第1項所述之有機發光二極體照明裝置,其中該絕緣層之厚度大致等於該導線之厚度,使該絕緣層之該上表面大致對齊該導線之該頂面,且該絕緣層之該上表面與該導線之該頂面之高度差小於100nm。 The OLED illumination device of claim 1, wherein the insulating layer has a thickness substantially equal to a thickness of the wire such that the upper surface of the insulating layer is substantially aligned with the top surface of the wire, and The height difference between the upper surface of the insulating layer and the top surface of the wire is less than 100 nm. 如申請專利範圍第1項所述之有機發光二極體照明裝置,其中該絕緣層之厚度加上該第一電極層之厚度大致等於該導線之厚度,使該第一電極層之上表面大致對齊該導線之頂面。 The organic light emitting diode lighting device of claim 1, wherein the thickness of the insulating layer plus the thickness of the first electrode layer is substantially equal to the thickness of the wire, so that the upper surface of the first electrode layer is substantially Align the top surface of the wire. 如申請專利範圍第1項所述之有機發光二極體照明裝置,其中該有機發光層以及該第二電極層彼此平行地連續延伸。 The organic light emitting diode lighting device of claim 1, wherein the organic light emitting layer and the second electrode layer extend continuously in parallel with each other. 如申請專利範圍第1項所述之有機發光二極體照明裝置,其 中該導線是呈直線狀在該基板上延伸。 An organic light-emitting diode lighting device according to claim 1, wherein The wire extends linearly on the substrate. 如申請專利範圍第1項所述之有機發光二極體照明裝置,其中該導線之數量為複數,且該等導線是平行地排列於該基板上。 The organic light emitting diode lighting device of claim 1, wherein the number of the wires is plural, and the wires are arranged in parallel on the substrate. 一種有機發光二極體照明裝置的製作方法,包含:提供一基板;於該基板上形成至少一導線,該導線具有一遠離該基板的頂面;於該基板上形成一絕緣層,且該絕緣層露出該導線之頂面的至少一部分,該絕緣層具有一遠離該基板的上表面;形成一覆蓋該絕緣層之該上表面之第一電極層,且使該第一電極層與該導線形成電連接;於該第一電極層上形成一有機發光層;以及於該有機發光層上形成一第二電極層。 A method for fabricating an organic light emitting diode device includes: providing a substrate; forming at least one wire on the substrate, the wire having a top surface away from the substrate; forming an insulating layer on the substrate, and the insulating The layer exposes at least a portion of a top surface of the wire, the insulating layer having an upper surface away from the substrate; forming a first electrode layer covering the upper surface of the insulating layer, and forming the first electrode layer and the wire Electrically connecting; forming an organic light emitting layer on the first electrode layer; and forming a second electrode layer on the organic light emitting layer. 如申請專利範圍第7項所述之有機發光二極體照明裝置的製作方法,其中使該絕緣層之厚度大致等於該導線之厚度,以使該絕緣層之該上表面大致對齊該導線之頂面,且使該絕緣層之該上表面與該導線之該頂面之高度差小於100nm。 The method of fabricating an organic light-emitting diode lighting device according to claim 7, wherein the thickness of the insulating layer is substantially equal to the thickness of the wire such that the upper surface of the insulating layer is substantially aligned with the top of the wire. And the height difference between the upper surface of the insulating layer and the top surface of the wire is less than 100 nm. 如申請專利範圍第7項所述之有機發光二極體照明裝置的製作方法,其中使該絕緣層之厚度加上該第一電極層之厚度大致等於該導線之厚度,使該第一電極層之上表面大致對齊該導線 之頂面。 The method of fabricating an organic light-emitting diode lighting device according to claim 7, wherein the thickness of the insulating layer and the thickness of the first electrode layer are substantially equal to the thickness of the wire, so that the first electrode layer The upper surface is substantially aligned with the wire The top surface. 如申請專利範圍第7項所述之有機發光二極體照 明裝置的製作方法,其中使該有機發光層以及該第二電極層呈現彼此平行地連續延伸。 The organic light-emitting diode photo according to claim 7 of the patent application scope A method of fabricating a device, wherein the organic light-emitting layer and the second electrode layer are continuously extended in parallel with each other.
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