TW201415613A - Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic device - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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Abstract
Description
本技術係關於一種固體攝像裝置、固體攝像裝置之製造方法及電子機器，尤其係關於一種具有抗反射調整層之固體攝像裝置、該固體攝像裝置之製造方法、及使用有該固體攝像裝置之電子機器。 The present technology relates to a solid-state imaging device, a method of manufacturing a solid-state imaging device, and an electronic device, and more particularly to a solid-state imaging device having an anti-reflection adjustment layer, a method of manufacturing the same, and an electronic device using the same machine.
固體攝像裝置具有排列有複數個光電轉換部之半導體基板，於該半導體基板上設置有抗反射調整層，進而於抗反射調整層之上部設置有具有包含複數種顏色之圖案之彩色濾光片。對固體攝像裝置之入射光由彩色濾光片分離成紅、綠及藍等具有不同波長之光併入射至各光電轉換部。 The solid-state imaging device includes a semiconductor substrate in which a plurality of photoelectric conversion portions are arranged, an anti-reflection adjustment layer is provided on the semiconductor substrate, and a color filter having a pattern including a plurality of colors is further provided on an upper portion of the anti-reflection adjustment layer. The incident light to the solid-state imaging device is separated by a color filter into light having different wavelengths such as red, green, and blue, and is incident on each of the photoelectric conversion portions.
關於此種固體攝像裝置，揭示有如下技術：根據彩色濾光片之圖案，即根據入射至光電轉換部之光之波長設定抗反射調整層之膜厚，從而謀求固體攝像裝置之感度提高。 In such a solid-state imaging device, there is disclosed a technique in which the film thickness of the anti-reflection adjustment layer is set in accordance with the pattern of the color filter, that is, the wavelength of the light incident on the photoelectric conversion portion, thereby improving the sensitivity of the solid-state imaging device.
例如固體攝像裝置包含：半導體基板，其包含複數個光電轉換元件；抗反射膜，其積層於半導體基板之受光面；及彩色濾光片，其積層於抗反射膜之上部且具有特定排列圖案。於該固體攝像裝置中，將積層有特定顏色之彩色濾光片之光電轉換元件作為抗反射膜去除元件，且該抗反射去除元件係於受光面開口部整個面去除抗反射膜(參考下述專利文獻1)。 For example, the solid-state imaging device includes a semiconductor substrate including a plurality of photoelectric conversion elements, an anti-reflection film laminated on the light-receiving surface of the semiconductor substrate, and a color filter laminated on the upper portion of the anti-reflection film and having a specific arrangement pattern. In the solid-state imaging device, a photoelectric conversion element in which a color filter of a specific color is laminated is used as an anti-reflection film removing element, and the anti-reflection removing element is attached to the entire surface of the light-receiving surface opening portion to remove the anti-reflection film (refer to the following Patent Document 1).
[專利文獻1]日本專利特開2011-216730號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-216730
然而，於此種構成之固體攝像裝置中，積層於半導體基板之受光面之抗反射膜被去除了對應於抗反射去除元件之部分，即，積層於半導體基板之受光面之抗反射膜被形成圖案。於對積層於半導體基板之受光面之抗反射膜進行圖案形成時，容易對受光面造成抗蝕劑污染、損傷，故而於抗反射去除元件中，白點及暗電流惡化之可能性較高。 However, in the solid-state imaging device having such a configuration, the anti-reflection film laminated on the light-receiving surface of the semiconductor substrate is removed from the portion corresponding to the anti-reflection removing element, that is, the anti-reflection film laminated on the light-receiving surface of the semiconductor substrate is formed. pattern. When the anti-reflection film laminated on the light-receiving surface of the semiconductor substrate is patterned, the resist is easily contaminated and damaged on the light-receiving surface. Therefore, in the anti-reflection removing element, the white point and the dark current are likely to be deteriorated.
因此，本技術之課題在於提供一種具有不會使白點及暗電流惡化而設置之抗反射調整層，並根據入射光之波長使各光電轉換部之感度最佳化的固體攝像裝置。 Therefore, an object of the present invention is to provide a solid-state imaging device which has an anti-reflection adjustment layer which is provided without deteriorating white spots and dark currents, and which optimizes the sensitivity of each photoelectric conversion portion in accordance with the wavelength of incident light.
為了達成此種目的，本技術之固體攝像裝置包含具有複數個光電轉換部之半導體基板、保護層、遮光膜、抗反射調整層、彩色濾光片、及配線層。保護層係覆蓋受光面之整個面地設置於半導體基板之受光面之正上方。遮光膜係設置於保護層上，將光電轉換部之間遮光。抗反射調整層係於保護層上設置於遮光膜之上層及下層之至少一者，並具有對應於特定之光電轉換部而經薄膜化之階差形狀。彩色濾光片係以對應於光電轉換部之配置而設置於抗反射調整層上，並具有對應於抗反射調整層之膜厚之各色圖案。配線層係設置於半導體基板之與受光面相反側。 In order to achieve such an object, a solid-state imaging device of the present technology includes a semiconductor substrate having a plurality of photoelectric conversion portions, a protective layer, a light shielding film, an anti-reflection adjustment layer, a color filter, and a wiring layer. The protective layer covers the entire surface of the light receiving surface and is disposed directly above the light receiving surface of the semiconductor substrate. The light shielding film is provided on the protective layer to shield the photoelectric conversion portions from light. The anti-reflection adjustment layer is provided on the protective layer on at least one of the upper layer and the lower layer of the light-shielding film, and has a stepped shape which is thinned in accordance with the specific photoelectric conversion portion. The color filter is provided on the anti-reflection adjustment layer in accordance with the arrangement of the photoelectric conversion portion, and has a color pattern corresponding to the film thickness of the anti-reflection adjustment layer. The wiring layer is provided on the opposite side of the semiconductor substrate from the light receiving surface.
關於此種構成之固體攝像裝置，具有對應於特定之光電轉換部而經薄膜化之階差形狀之抗反射調整層係如下構成：介隔覆蓋受光面之整個面而設置之保護層，而設置於半導體基板之受光面上。因此，於將介隔保護層而成膜於受光面上之抗反射調整層圖案化為階差形狀 時，圖案化之損傷不會影響半導體基板之受光面。 In the solid-state imaging device having such a configuration, the anti-reflection adjustment layer having a stepped shape which is thinned in accordance with the specific photoelectric conversion portion is configured to provide a protective layer which is provided to cover the entire surface of the light-receiving surface, and is provided. On the light receiving surface of the semiconductor substrate. Therefore, the anti-reflection adjustment layer formed on the light-receiving surface by the protective layer is patterned into a step shape. When the patterning damage does not affect the light receiving surface of the semiconductor substrate.
又，本技術亦係此種固體攝像裝置之製造方法，並進行如下程序。首先，於具有複數個光電轉換部之半導體基板之受光面之正上方形成覆蓋受光面之整個面之保護層。於保護層上形成對光電轉換部之間進行遮光之遮光膜。又，於保護層上在遮光膜之上層及下層之至少一者成膜抗反射調整層，並將成膜而成之抗反射調整層圖案化為對應於特定之光電轉換部而經薄膜化之階差形狀。其後，於抗反射調整層上以對應於光電轉換部之配置形成具有對應於抗反射調整層之膜厚之各色圖案之彩色濾光片。又，於半導體基板之與受光面相反側形成配線層。 Moreover, the present technology is also a method of manufacturing such a solid-state imaging device, and the following procedure is performed. First, a protective layer covering the entire surface of the light-receiving surface is formed directly above the light-receiving surface of the semiconductor substrate having a plurality of photoelectric conversion portions. A light shielding film that blocks light between the photoelectric conversion portions is formed on the protective layer. Further, an anti-reflection adjustment layer is formed on at least one of the upper layer and the lower layer of the light-shielding film on the protective layer, and the anti-reflection adjustment layer formed by the film formation is patterned into a thin film corresponding to the specific photoelectric conversion portion. Step shape. Thereafter, a color filter having a color pattern corresponding to the film thickness of the anti-reflection adjustment layer is formed on the anti-reflection adjustment layer in a configuration corresponding to the photoelectric conversion portion. Further, a wiring layer is formed on the opposite side of the semiconductor substrate from the light receiving surface.
又，本技術亦為包含上述固體攝像裝置之電子機器，進而包含將入射光導入至光電轉換部之光學系統。 Moreover, the present technology is also an electronic device including the above solid-state imaging device, and further includes an optical system that introduces incident light into the photoelectric conversion portion.
關於以上所說明之本技術，於包含具有對應於特定之光電轉換部而經薄膜化之階差形狀之抗反射調整層的固體攝像裝置中，抗反射調整層之圖案化所產生之損傷不會影響半導體基板之受光面，故而可防止白點及暗電流之惡化。因此，於包含抗反射調整層之固體攝像裝置中，可不使白點及暗電流惡化，而根據以彩色濾光片分光後之入射光之波長謀求各光電轉換部之感度之最佳化。 In the solid-state imaging device including the anti-reflection adjustment layer having a stepped shape which is thinned corresponding to a specific photoelectric conversion portion, the damage caused by the patterning of the anti-reflection adjustment layer is not caused by the above-described technique. Since the light-receiving surface of the semiconductor substrate is affected, deterioration of white spots and dark current can be prevented. Therefore, in the solid-state imaging device including the anti-reflection adjustment layer, the sensitivity of each photoelectric conversion portion can be optimized based on the wavelength of the incident light split by the color filter without deteriorating the white point and the dark current.
1、1-1、1-1a、1-1b、1-2、1-2a、1-3‧‧‧固體攝像裝置 1, 1-1, 1-1a, 1-1b, 1-2, 1-2a, 1-3‧‧‧ solid state camera
3‧‧‧像素 3‧‧ ‧ pixels
4‧‧‧像素區域 4‧‧‧Pixel area
5‧‧‧垂直驅動電路 5‧‧‧Vertical drive circuit
6‧‧‧行信號處理電路 6‧‧‧ line signal processing circuit
7‧‧‧水平驅動電路 7‧‧‧ horizontal drive circuit
8‧‧‧系統控制電路 8‧‧‧System Control Circuit
9‧‧‧像素驅動線 9‧‧‧Pixel drive line
10‧‧‧垂直驅動線 10‧‧‧Vertical drive line
11‧‧‧半導體基板 11‧‧‧Semiconductor substrate
11a‧‧‧受光面 11a‧‧‧Glossy surface
12、12b、12g、12r‧‧‧光電轉換部 12, 12b, 12g, 12r‧‧‧ photoelectric conversion department
13‧‧‧保護層 13‧‧‧Protective layer
14、24、24b、24g、24r、24-1、24-2、34‧‧‧抗反射調整層 14, 24, 24b, 24g, 24r, 24-1, 24-2, 34‧‧‧ anti-reflection adjustment layer
14b、14g‧‧‧凹部 14b, 14g‧‧‧ recess
15‧‧‧遮光膜 15‧‧‧Shade film
16‧‧‧密接層 16‧‧ ‧ close layer
17‧‧‧彩色濾光片 17‧‧‧Color filters
17b、17g、17r‧‧‧圖案 17b, 17g, 17r‧‧‧ patterns
18‧‧‧晶載透鏡 18‧‧‧Crystal lens
19‧‧‧配線層 19‧‧‧Wiring layer
91‧‧‧相機 91‧‧‧ camera
93‧‧‧光學系統 93‧‧‧Optical system
94‧‧‧快門裝置 94‧‧‧Shutter device
95‧‧‧驅動電路 95‧‧‧ drive circuit
96‧‧‧信號處理電路 96‧‧‧Signal Processing Circuit
PR1、PR2、PR3‧‧‧抗蝕劑圖案 PR1, PR2, PR3‧‧‧resist pattern
Tr、Tg、Tb‧‧‧膜厚 Tr, Tg, Tb‧‧‧ film thickness
圖1係應用本技術之固體攝像裝置之概略構成圖。 Fig. 1 is a schematic configuration diagram of a solid-state imaging device to which the present technology is applied.
圖2係表示第1實施形態之固體攝像裝置之構成之主要部分剖面圖。 FIG. 2 is a cross-sectional view showing the configuration of a solid-state imaging device according to the first embodiment.
圖3A-C係表示第1實施形態之固體攝像裝置之製造方法之剖面步驟圖(1)。 3A to 3C are cross-sectional view (1) showing a method of manufacturing the solid-state imaging device according to the first embodiment.
圖4A-C係表示第1實施形態之固體攝像裝置之製造方法之剖面步 驟圖(2)。 4A-C are cross-sectional views showing a method of manufacturing the solid-state imaging device according to the first embodiment. Figure (2).
圖5A、B係表示第1實施形態之固體攝像裝置之製造方法之剖面步驟圖(3)。 5A and 5B are cross-sectional view (3) showing a method of manufacturing the solid-state imaging device according to the first embodiment.
圖6係關於第1實施形態之固體攝像裝置之圖表。 Fig. 6 is a diagram showing a solid-state imaging device according to the first embodiment.
圖7係表示第1實施形態之變化例1之固體攝像裝置之構成的主要部分剖面圖。 Fig. 7 is a cross-sectional view showing the configuration of a solid-state imaging device according to a first modification of the first embodiment.
圖8係表示第1實施形態之變化例2之固體攝像裝置之構成的主要部分剖面圖。 Fig. 8 is a cross-sectional view showing the configuration of a solid-state imaging device according to a second modification of the first embodiment.
圖9係表示第2實施形態之固體攝像裝置之構成之主要部分剖面圖。 FIG. 9 is a cross-sectional view showing the configuration of a solid-state imaging device according to a second embodiment.
圖10A-C係表示第2實施形態之固體攝像裝置之製造方法之剖面步驟圖(1)。 10A to 10C are cross-sectional view (1) showing a method of manufacturing the solid-state imaging device according to the second embodiment.
圖11A、B係表示第2實施形態之固體攝像裝置之製造方法之剖面步驟圖(2)。 11A and 11B are cross-sectional view (2) showing a method of manufacturing the solid-state imaging device according to the second embodiment.
圖12係表示第2實施形態之變化例1之固體攝像裝置之構成的主要部分剖面圖。 Fig. 12 is a cross-sectional view showing the configuration of a solid-state imaging device according to a first modification of the second embodiment.
圖13係表示第3實施形態之固體攝像裝置之構成之主要部分剖面圖。 FIG. 13 is a cross-sectional view showing the configuration of a solid-state imaging device according to a third embodiment.
圖14係使用有應用本技術而獲得之固體攝像裝置之電子機器之構成圖。 Fig. 14 is a view showing the configuration of an electronic apparatus using a solid-state imaging device obtained by applying the present technique.
以下，基於圖式，以如下所示之順序說明本技術之實施形態。 Hereinafter, embodiments of the present technology will be described in the following order based on the drawings.
1.實施形態之固體攝像裝置之概略構成例 1. A schematic configuration example of a solid-state imaging device according to an embodiment
2.第1實施形態之固體攝像裝置(抗反射調整層設置於遮光膜之下層之例) 2. Solid-state imaging device according to the first embodiment (an example in which an anti-reflection adjustment layer is provided under a light-shielding film)
3.第1實施形態之變化例1(彩色濾光片僅設置於遮光膜之開口內 之例) 3. Modification 1 of the first embodiment (the color filter is provided only in the opening of the light shielding film) Example)
4.第1實施形態之變化例2(抗反射調整層為薄膜化為2級膜厚之階差形狀之例) 4. Modification 2 of the first embodiment (an example in which the anti-reflection adjustment layer is formed into a stepped shape of a film thickness of a second order)
5.第2實施形態之固體攝像裝置(抗反射調整層設置於遮光膜之上層之例：其一) 5. The solid-state imaging device according to the second embodiment (an example in which the anti-reflection adjustment layer is provided on the upper layer of the light-shielding film: one of them)
6.第2實施形態之變化例1(抗反射調整層為設置於遮光膜之上層及下層之積層構造之例) 6. Modification 1 of the second embodiment (an example in which the anti-reflection adjustment layer is a laminated structure provided on the upper layer and the lower layer of the light shielding film)
7.第3實施形態之固體攝像裝置(抗反射調整層設置於遮光膜之上層之例：其二) 7. A solid-state imaging device according to a third embodiment (an example in which an anti-reflection adjustment layer is provided on an upper layer of a light-shielding film: second)
8.第4實施形態(使用有固體攝像裝置之電子機器之例) 8. Fourth Embodiment (Example of an electronic device using a solid-state imaging device)
再者，對各實施形態中共用之構成要素標註相同符號，並省略重複之說明。 In addition, constituent elements that are common to the respective embodiments are denoted by the same reference numerals, and the description thereof will not be repeated.
圖1表示作為設置有本技術之固體攝像裝置之固體攝像裝置之一例，使用MOS(Metal Oxide Semiconductor，金屬氧化物半導體)型固體攝像裝置之概略構成。 FIG. 1 shows a schematic configuration of a solid-state imaging device using a MOS (Metal Oxide Semiconductor) type as an example of a solid-state imaging device provided with a solid-state imaging device of the present technology.
該圖所示之固體攝像裝置1於半導體基板11之一面上具有像素區域4，該像素區域4係由包含光電轉換區域之複數個像素3呈二維排列而成。於排列於像素區域4之各像素3設置有光電轉換區域、浮動擴散部(Floating Diffusion)、讀出閘、以及包含複數個電晶體(所謂之MOS電晶體)及電容元件等之像素電路。再者，亦有複數個像素3中共有像素電路之一部分之情形。 The solid-state imaging device 1 shown in the figure has a pixel region 4 on one surface of a semiconductor substrate 11, and the pixel region 4 is formed by two-dimensionally arranging a plurality of pixels 3 including a photoelectric conversion region. Each of the pixels 3 arranged in the pixel region 4 is provided with a photoelectric conversion region, a floating diffusion, a read gate, and a pixel circuit including a plurality of transistors (so-called MOS transistors) and capacitor elements. Furthermore, there are cases in which a plurality of pixels 3 share a part of the pixel circuit.
於如上所述之像素區域4之周邊部分設置有垂直驅動電路5、行信號處理電路6、水平驅動電路7、及系統控制電路8等周邊電路。 Peripheral circuits such as the vertical drive circuit 5, the line signal processing circuit 6, the horizontal drive circuit 7, and the system control circuit 8 are provided in the peripheral portion of the pixel region 4 as described above.
垂直驅動電路5例如包含移位暫存器，選擇像素驅動線9並對所選擇之像素驅動線9供給用以驅動像素3之脈衝，以列單位驅動排列於 像素區域4之像素3。即，垂直驅動電路5係以列單位依序於垂直方向上選擇掃描排列於像素區域4之各像素。繼而，通過相對於像素驅動線9垂直地進行配線之垂直驅動線10，將各像素3中根據受光量而生成之基於信號電荷之像素信號供給至行信號處理電路6。 The vertical driving circuit 5 includes, for example, a shift register, selects the pixel driving line 9 and supplies a pulse for driving the pixel 3 to the selected pixel driving line 9, and is arranged in column unit driving. Pixel 3 of pixel area 4. That is, the vertical drive circuit 5 selectively scans the pixels arranged in the pixel region 4 in the vertical direction in column units. Then, the signal charge-based pixel signal generated in accordance with the amount of received light in each pixel 3 is supplied to the line signal processing circuit 6 by the vertical drive line 10 which is vertically wired with respect to the pixel drive line 9.
行信號處理電路6係配置於像素之例如每行，對自1列量之像素3輸出之信號每像素行地進行雜訊去除等信號處理。即，行信號處理電路6進行用以去除像素固有之固定圖案雜訊之相關雙取樣(CDS：Correlated Double Sampling)、或信號放大、類比/數位轉換(AD：Analog/Digital Conversion)等信號處理。 The line signal processing circuit 6 is disposed, for example, in each row of pixels, and performs signal processing such as noise removal for each pixel row of signals output from the pixels 3 of one column. That is, the line signal processing circuit 6 performs signal processing such as Correlated Double Sampling (CDS) for removing fixed pattern noise inherent to the pixel, or signal amplification, analog/digital conversion (AD: Analog/Digital Conversion).
水平驅動電路7例如包含移位暫存器，藉由依序輸出水平掃描脈衝而依序選擇各個行信號處理電路6，並自各個行信號處理電路6使像素信號輸出。 The horizontal drive circuit 7 includes, for example, a shift register, which sequentially selects each line signal processing circuit 6 by sequentially outputting horizontal scanning pulses, and outputs pixel signals from the respective line signal processing circuits 6.
系統控制電路8接收輸入時脈及指示動作模式等之資料，而且輸出固體攝像裝置1之內部資訊等資料。即，於系統控制電路8中，基於垂直同步信號、水平同步信號及主時脈而生成成為垂直驅動電路5、行信號處理電路6、及水平驅動電路7等之動作之基準之時脈信號或控制信號。繼而，將該等信號輸入至垂直驅動電路5、行信號處理電路6、及水平驅動電路7等。 The system control circuit 8 receives data such as an input clock and an instruction operation mode, and outputs information such as internal information of the solid-state imaging device 1. In other words, the system control circuit 8 generates a clock signal that serves as a reference for the operation of the vertical drive circuit 5, the line signal processing circuit 6, and the horizontal drive circuit 7 based on the vertical synchronization signal, the horizontal synchronization signal, and the main clock. control signal. Then, the signals are input to the vertical drive circuit 5, the line signal processing circuit 6, the horizontal drive circuit 7, and the like.
驅動各像素之驅動電路包含如上所述之各周邊電路5~8、及設置於像素區域4之像素電路。再者，周邊電路5~8亦可配置於積層於像素區域4之位置。 The driving circuit for driving each pixel includes each of the peripheral circuits 5 to 8 as described above and a pixel circuit provided in the pixel region 4. Furthermore, the peripheral circuits 5 to 8 may be disposed at positions stacked in the pixel region 4.
(抗反射調整層設置於遮光膜之下層之例) (Example in which the anti-reflection adjustment layer is disposed under the light shielding film)
圖2係表示第1實施形態之固體攝像裝置之構成之主要部分剖面圖。以下，基於該圖式而說明第1實施形態之固體攝像裝置1-1之構成。 FIG. 2 is a cross-sectional view showing the configuration of a solid-state imaging device according to the first embodiment. Hereinafter, the configuration of the solid-state imaging device 1-1 according to the first embodiment will be described based on the drawings.
如圖2所示，第1實施形態之固體攝像裝置1-1具有包含光電轉換部12之半導體基板11，並於半導體基板11之受光面11a上依序積層有保護層13、抗反射調整層14、遮光膜15、密接層16、彩色濾光片17及晶載透鏡(on-chip lens)18。又，固體攝像裝置1-1為背面照射型，並於半導體基板11之與受光面11a相反側設置有配線層19。 As shown in FIG. 2, the solid-state imaging device 1-1 of the first embodiment includes a semiconductor substrate 11 including a photoelectric conversion unit 12, and a protective layer 13 and an anti-reflection adjustment layer are sequentially laminated on the light-receiving surface 11a of the semiconductor substrate 11. 14. A light shielding film 15, an adhesion layer 16, a color filter 17, and an on-chip lens 18. Further, the solid-state imaging device 1-1 is of a back side illumination type, and a wiring layer 19 is provided on the opposite side of the semiconductor substrate 11 from the light receiving surface 11a.
其中抗反射調整層14具特徵性，其具有對應於特定之光電轉換部12而經薄膜化之階差形狀，該階差形狀係以遮光膜15為掩膜而經圖案化之階差形狀。又，於固體攝像裝置1-1中，具有此種階差形狀之抗反射調整層14之特徵在於介隔覆蓋受光面11a之整個面而設置之保護層13，而設置於半導體基板11之受光面11a上。進而，彩色濾光片17之特徵在於嵌入遮光膜15之間而設置。 The anti-reflection adjustment layer 14 is characterized in that it has a stepped shape which is thinned corresponding to the specific photoelectric conversion portion 12, and the step shape is a stepped shape which is patterned by using the light shielding film 15 as a mask. Further, in the solid-state imaging device 1-1, the anti-reflection adjustment layer 14 having such a step shape is characterized in that the protective layer 13 provided to cover the entire surface of the light-receiving surface 11a is provided, and the light-receiving layer 13 provided on the semiconductor substrate 11 is received. On face 11a. Further, the color filter 17 is characterized in that it is provided between the light shielding films 15.
以下，按照半導體基板11、光電轉換部12、保護層13、抗反射調整層14、遮光膜15、密接層16、彩色濾光片17、晶載透鏡18、配線層19之順序說明各構成。 Hereinafter, each configuration will be described in the order of the semiconductor substrate 11, the photoelectric conversion portion 12, the protective layer 13, the anti-reflection adjustment layer 14, the light shielding film 15, the adhesion layer 16, the color filter 17, the crystal carrier lens 18, and the wiring layer 19.
半導體基板11由晶質半導體構成，例如為包含單晶矽之基板。於半導體基板11內，沿受光面11a排列形成有複數個光電轉換部12，並於與受光面11a相反側之界面設置有省略圖示之浮動擴散部。 The semiconductor substrate 11 is made of a crystalline semiconductor, and is, for example, a substrate including a single crystal germanium. In the semiconductor substrate 11, a plurality of photoelectric conversion portions 12 are arranged along the light-receiving surface 11a, and a floating diffusion portion (not shown) is provided at an interface opposite to the light-receiving surface 11a.
光電轉換部12係包含n型雜質區域及p型雜質區域之pn接面之光電二極體(PD，photodiode)。光電轉換部12係設置於每個像素，並於半導體基板11內相對於受光面11a呈二維排列有複數個。對該光電轉換部12入射以彩色濾光片17分光後之光。例如於彩色濾光片17具有RGB(Red-Green-Blue，紅綠藍)各色圖案17r、17g、17b之情形時，對光電轉換部12r(12)入射紅色(R)之光，對光電轉換部12g(12)入射綠色(G)之光，且對光電轉換部12b(12)入射藍色(B)之光。於各光電轉換部 12中，入射光經光電轉換，所產生之信號電荷被蓄積。 The photoelectric conversion unit 12 is a photodiode (PD) including an n-type impurity region and a pn junction of the p-type impurity region. The photoelectric conversion unit 12 is provided in each of the pixels, and is plurally arranged in two dimensions in the semiconductor substrate 11 with respect to the light receiving surface 11a. The photoelectric conversion unit 12 is incident on the light split by the color filter 17. For example, when the color filter 17 has the RGB (Red-Green-Blue) color patterns 17r, 17g, and 17b, the red (R) light is incident on the photoelectric conversion portion 12r (12), and photoelectric conversion is performed. The portion 12g (12) is incident on the light of the green (G), and the light of the blue (B) is incident on the photoelectric conversion portion 12b (12). In each photoelectric conversion unit In 12, the incident light is photoelectrically converted, and the generated signal charge is accumulated.
保護層13係覆蓋受光面11a之整個面而設置於半導體基板11之受光面11a之正上方，且為保護半導體基板11之受光面11a之層。該保護層13係未經圖案化而表面平坦之層，具有10~50nm左右之均勻膜厚。又，作為一例，保護層13之折射率高於抗反射調整層14。 The protective layer 13 covers the entire surface of the light-receiving surface 11a and is disposed directly above the light-receiving surface 11a of the semiconductor substrate 11, and is a layer that protects the light-receiving surface 11a of the semiconductor substrate 11. The protective layer 13 is a layer having a flat surface without being patterned, and has a uniform film thickness of about 10 to 50 nm. Moreover, as an example, the refractive index of the protective layer 13 is higher than that of the anti-reflection adjustment layer 14.
此種保護層13係使用例如氧化鉿(HfO)、氧化鋁(Al2O3)、氧化鉭(TaO)、五氧化鉭(Ta2O5)、氮化矽(SiN)及氧化矽(Si2O)等而構成。或者亦可由該等之積層構造構成。包含該等材料之保護層13為對半導體基板11之保護膜。又，於使用該等材料之情形時，保護層13亦發揮作為對半導體基板11之釘紮層之功能。 Such a protective layer 13 is, for example, hafnium oxide (HfO), aluminum oxide (Al 2 O 3 ), tantalum oxide (TaO), tantalum pentoxide (Ta 2 O 5 ), tantalum nitride (SiN), and tantalum oxide (Si). 2 O) and so on. Or it may consist of these laminated structures. The protective layer 13 containing these materials is a protective film for the semiconductor substrate 11. Further, in the case of using these materials, the protective layer 13 also functions as a pinning layer for the semiconductor substrate 11.
抗反射調整層14係於保護層13上設置於遮光膜15之下層。抗反射調整層14係具有對應於特定之光電轉換部12而局部地薄膜化而成之階差形狀，且以由彩色濾光片17分光後之各色光於各光電轉換部12中之反射率達到最小之方式進行調整的抗反射用之層。抗反射調整層14之折射率較彩色濾光片17之折射率小，例如為折射率n=1.44~1.54左右。藉此，抗反射調整層14發揮作為半導體基板11之受光面11a上之多層抗反射膜之功能。再者，抗反射調整層14之折射率較保護層13之折射率低。 The anti-reflection adjustment layer 14 is provided on the protective layer 13 under the light shielding film 15. The anti-reflection adjustment layer 14 has a step shape which is partially thinned corresponding to the specific photoelectric conversion portion 12, and the reflectance of each color light split by the color filter 17 in each photoelectric conversion portion 12 The anti-reflection layer that is adjusted to the minimum. The refractive index of the anti-reflection adjustment layer 14 is smaller than the refractive index of the color filter 17, and is, for example, a refractive index n of 1.44 to 1.54. Thereby, the anti-reflection adjustment layer 14 functions as a multilayer anti-reflection film on the light-receiving surface 11a of the semiconductor substrate 11. Furthermore, the refractive index of the anti-reflection adjustment layer 14 is lower than that of the protective layer 13.
此種抗反射調整層14例如使用氮化矽(SiN)及氧化矽(SiO)等無機材料、丙烯酸系樹脂及苯乙烯等有機材料而構成。可為自該等選擇一種材料而成之單層構造，可為混合複數種材料而成之單層構造，或者亦可為積層構造。作為積層構造之一例，將抗反射調整層14設為使用了選擇比相互不同之材料之層所形成之積層構造，於對抗反射調整層14進行形成階差形狀之蝕刻時，亦可將下層作為蝕刻終止層使用。 The anti-reflection adjustment layer 14 is made of, for example, an inorganic material such as tantalum nitride (SiN) or yttrium oxide (SiO), an acrylic resin, or an organic material such as styrene. It may be a single-layer structure in which one material is selected from the above, and may be a single-layer structure in which a plurality of materials are mixed, or may be a laminated structure. As an example of the laminated structure, the anti-reflection adjustment layer 14 is formed by using a layered structure in which layers of materials different from each other are selected, and when the anti-reflection adjustment layer 14 is formed into a stepped shape, the lower layer may be used as the lower layer. The etch stop layer is used.
抗反射調整層14係以經由彩色濾光片17而入射至特定之光電轉換部12之光之波長越大，則對應於該光電轉換部12之部分之膜厚越大的方式，對應於特定之光電轉換部12而局部地薄膜化而成之階差形狀。此處，將對應於各光電轉換部12r、12g、12b而薄膜化而成之部分之抗反射調整層14之各膜厚設為膜厚Tr、Tg及Tb。於此情形時，各膜厚Tr、Tg及Tb為可防止以彩色濾光片17分光後之特定波長之光反射的膜厚，考慮光之持續時間，該等膜厚係於10~500nm左右之範圍內進行調整。於本實施形態中，該等膜厚Tr、Tg及Tb之關係根據入射光之波長而成為Tr>Tg>Tb。 The anti-reflection adjustment layer 14 corresponds to a specific type in which the wavelength of light incident on the specific photoelectric conversion portion 12 via the color filter 17 is larger, and the film thickness corresponding to the portion of the photoelectric conversion portion 12 is larger. The photoelectric conversion unit 12 is partially thinned into a stepped shape. Here, each film thickness of the anti-reflection adjustment layer 14 which is thinned in accordance with each of the photoelectric conversion portions 12r, 12g, and 12b is referred to as a film thickness Tr, Tg, and Tb. In this case, each of the film thicknesses Tr, Tg, and Tb is a film thickness that can prevent light of a specific wavelength after being split by the color filter 17, and the film thickness is about 10 to 500 nm in consideration of the duration of light. Adjust within the scope. In the present embodiment, the relationship between the film thicknesses Tr, Tg, and Tb is Tr>Tg>Tb depending on the wavelength of the incident light.
又，抗反射調整層14具有之階差形狀係以遮光膜15為掩膜之蝕刻所形成之階差形狀。因此，抗反射調整層14具有開口形狀與遮光膜15之開口相同之凹部14g、14b，該等凹部14g、14b係對應於各光電轉換部12g、12b而進行設置。由於抗反射調整層14具有凹部14g、14b，故而如上所述，對應於各光電轉換部12r、12g、12b之部分之抗反射調整層14之各膜厚成為Tr、Tg、Tb。藉此，抗反射調整層14對應於各光電轉換部12r、12g、12b被局部地薄膜化，具有設置有凹部14g、14b之階差形狀。 Further, the anti-reflection adjustment layer 14 has a step shape which is formed by etching with the light-shielding film 15 as a mask. Therefore, the anti-reflection adjustment layer 14 has concave portions 14g and 14b having the same opening shape as the openings of the light shielding film 15, and the concave portions 14g and 14b are provided corresponding to the respective photoelectric conversion portions 12g and 12b. Since the anti-reflection adjustment layer 14 has the concave portions 14g and 14b, as described above, the respective thicknesses of the anti-reflection adjustment layer 14 corresponding to the respective photoelectric conversion portions 12r, 12g, and 12b are Tr, Tg, and Tb. Thereby, the anti-reflection adjustment layer 14 is partially thinned corresponding to each of the photoelectric conversion portions 12r, 12g, and 12b, and has a stepped shape in which the concave portions 14g and 14b are provided.
於此種抗反射調整層14中，由作為掩膜之遮光膜15所覆蓋之部分，即遮光膜15之下部分之膜厚分別相等。另一方面，要被圖案化之部分即遮光膜15之開口部分之膜厚根據入射至對應之光電轉換部12之光之波長而不同。而且，遮光膜15之開口部分係相對於由遮光膜15所覆蓋之部分而被薄膜化。 In the anti-reflection adjustment layer 14, the portion covered by the light-shielding film 15 as a mask, that is, the film thickness of the lower portion of the light-shielding film 15 is equal. On the other hand, the film thickness of the portion to be patterned, that is, the opening portion of the light shielding film 15 differs depending on the wavelength of light incident on the corresponding photoelectric conversion portion 12. Further, the opening portion of the light shielding film 15 is thinned with respect to the portion covered by the light shielding film 15.
遮光膜15係對光電轉換部12之間進行遮光之膜，且於抗反射調整層14上，以覆蓋光電轉換部12之間並於光電轉換部12上開口之圖案進行設置。該遮光膜15係使用例如鎢(W)、氧化鎢(WO)、鈦(Ti)、氮 化鈦(TiN)及碳黑分散樹脂等材料而構成。可為自該等選擇一種材料而成之單層構造，可為混合有複數種材料之單層構造，或者亦可為積層構造。 The light-shielding film 15 is a film that shields the photoelectric conversion unit 12 from light, and is provided on the anti-reflection adjustment layer 14 so as to cover the pattern between the photoelectric conversion units 12 and open on the photoelectric conversion unit 12. The light shielding film 15 is made of, for example, tungsten (W), tungsten oxide (WO), titanium (Ti), nitrogen. It is composed of a material such as titanium (TiN) and a carbon black dispersion resin. The single layer structure may be selected from a material selected from the above, and may be a single layer structure in which a plurality of materials are mixed, or may be a laminated structure.
密接層16係覆蓋抗反射調整層14及遮光膜15之具有均勻膜厚之層，且係使遮光膜15與彩色濾光片17之密接性提高之層。該密接層16較佳為包含具有與抗反射調整層14相同程度之折射率之材料，可使用與抗反射調整層14相同之材料構成。 The adhesion layer 16 covers a layer having a uniform film thickness of the anti-reflection adjustment layer 14 and the light-shielding film 15 and is a layer in which the adhesion between the light-shielding film 15 and the color filter 17 is improved. The adhesion layer 16 preferably includes a material having the same refractive index as the anti-reflection adjustment layer 14, and may be made of the same material as the anti-reflection adjustment layer 14.
彩色濾光片17係以對應於光電轉換部12之配置設置，並具有對應於抗反射調整層14之膜厚之各色圖案。例如使用如圖2所示般具有RGB之各色圖案17r、17g、17b之彩色濾光片17。於此情形時，R圖案17r對應於抗反射調整層14之膜厚Tr，G圖案17g對應於抗反射調整層14之膜厚Tg，B圖案17b對應於抗反射調整層14之膜厚Tb。彩色濾光片17係於抗反射調整層14上以嵌入遮光膜15之間之狀態介隔密接層16而設置。藉此，照射至固體攝像裝置1-1之光，於彩色濾光片17之各色圖案中經分光後之波長不同之光(例如紅色、綠色及藍色)入射至對應之各光電轉換部12(12r、12g、12b)。 The color filter 17 is provided corresponding to the arrangement of the photoelectric conversion portion 12, and has a color pattern corresponding to the film thickness of the anti-reflection adjustment layer 14. For example, a color filter 17 having RGB color patterns 17r, 17g, and 17b as shown in FIG. 2 is used. In this case, the R pattern 17r corresponds to the film thickness Tr of the anti-reflection adjustment layer 14, the G pattern 17g corresponds to the film thickness Tg of the anti-reflection adjustment layer 14, and the B pattern 17b corresponds to the film thickness Tb of the anti-reflection adjustment layer 14. The color filter 17 is provided on the anti-reflection adjustment layer 14 so as to be interposed between the light-shielding films 15 via the adhesion layer 16. Thereby, the light that has been irradiated to the solid-state imaging device 1-1 is incident on the respective photoelectric conversion sections 12 having different wavelengths (for example, red, green, and blue) after being split in the respective color patterns of the color filter 17. (12r, 12g, 12b).
又，彩色濾光片17較佳為具有經平坦化之表面。藉此，無需設置平坦化層作為繼而說明之晶載透鏡18之基底。 Further, the color filter 17 preferably has a flattened surface. Thereby, it is not necessary to provide a planarization layer as the substrate of the crystal carrier lens 18 which will be described later.
此種彩色濾光片17係例如於以丙烯酸系樹脂作為主成分之有機樹脂中添加使用有金屬錯合物或高分子染料之色素而構成。或者亦可由多層膜構成，作為多層膜之一例，可列舉氮化矽(SiN)及氧化矽(SiO)等無機材料之積層構造。 The color filter 17 is formed by, for example, adding a dye containing a metal complex or a polymer dye to an organic resin containing an acrylic resin as a main component. Alternatively, it may be composed of a multilayer film. Examples of the multilayer film include a laminated structure of inorganic materials such as tantalum nitride (SiN) and cerium oxide (SiO).
晶載透鏡18係構成為於表面平坦之彩色濾光片17上，對應於各 光電轉換部12而設置，且使入射光聚光於各光電轉換部12。 The crystal carrier lens 18 is formed on the color filter 17 whose surface is flat, corresponding to each The photoelectric conversion unit 12 is provided, and the incident light is condensed on each of the photoelectric conversion units 12.
配線層19係設置於半導體基板11之與受光面11a相反側。於與半導體基板11之界面側，介隔閘絕緣膜而設置省略圖示之傳輸閘，並且進而設置其他電極，該等電極由層間絕緣膜(省略圖示)所覆蓋。於層間絕緣膜上設置有多層配線，該配線之一部分連接於傳輸閘及半導體基板11內之浮動擴散部。此種配線層19形成驅動像素之驅動電路之一部分。 The wiring layer 19 is provided on the opposite side of the semiconductor substrate 11 from the light receiving surface 11a. On the interface side with the semiconductor substrate 11, a transfer gate (not shown) is provided through a gate insulating film, and further electrodes are provided, and these electrodes are covered with an interlayer insulating film (not shown). A plurality of wirings are provided on the interlayer insulating film, and one of the wirings is partially connected to the transfer gate and the floating diffusion portion in the semiconductor substrate 11. Such a wiring layer 19 forms part of a driving circuit for driving pixels.
圖3~圖5係用以說明第1實施形態之固體攝像裝置1-1之製造方法之剖面步驟圖。以下，基於該等圖式而說明固體攝像裝置1-1之製造方法。 3 to 5 are cross-sectional view showing a method of manufacturing the solid-state imaging device 1-1 according to the first embodiment. Hereinafter, a method of manufacturing the solid-state imaging device 1-1 will be described based on the drawings.
首先，如圖3之A所示，沿半導體基板11之受光面11a排列形成複數個光電轉換部12，進而於半導體基板11內形成省略了圖示之浮動擴散部。於半導體基板11之與受光面11a相反側之表面上，介隔閘絕緣膜而形成省略了圖示之傳輸閘及其他閘極電極，並以層間絕緣膜覆蓋該等，而於層間絕緣膜形成多層之配線。藉此，於半導體基板11之與受光面11a相反側形成配線層19。 First, as shown in FIG. 3A, a plurality of photoelectric conversion portions 12 are arranged along the light receiving surface 11a of the semiconductor substrate 11, and a floating diffusion portion (not shown) is formed in the semiconductor substrate 11. On the surface of the semiconductor substrate 11 opposite to the light-receiving surface 11a, a gate insulating film is formed to form a transfer gate and other gate electrodes, which are not shown, and are covered with an interlayer insulating film to form an interlayer insulating film. Multi-layer wiring. Thereby, the wiring layer 19 is formed on the opposite side of the semiconductor substrate 11 from the light receiving surface 11a.
繼而，於半導體基板11之受光面11a上依序積層成膜保護層13、抗反射調整層14及光膜15。其中保護層13例如包含氧化鉿(HfO)，並藉由真空薄膜製法以膜厚10~50nm而成膜。抗反射調整層14例如包含氮化矽(SiN)，並藉由P-CVD(Plasma-Chemical Vapor Deposition，電漿化學氣相沈積)法而成膜。此時，抗反射調整層14之膜厚與方才使用圖1而說明之抗反射調整層14之對應於光電轉換部12r之部分的膜厚Tr一致，例如設為膜厚130nm。遮光膜15例如包含鎢(W)，並藉由濺鍍成膜法而成膜。 Then, the protective layer 13, the anti-reflection adjustment layer 14, and the optical film 15 are sequentially laminated on the light-receiving surface 11a of the semiconductor substrate 11. The protective layer 13 contains, for example, hafnium oxide (HfO), and is formed into a film having a film thickness of 10 to 50 nm by a vacuum film production method. The anti-reflection adjustment layer 14 contains, for example, tantalum nitride (SiN), and is formed by a P-CVD (Plasma-Chemical Vapor Deposition) method. At this time, the film thickness of the anti-reflection adjustment layer 14 is equal to the film thickness Tr of the portion of the anti-reflection adjustment layer 14 corresponding to the photoelectric conversion portion 12r described with reference to FIG. 1, and is, for example, a film thickness of 130 nm. The light shielding film 15 contains, for example, tungsten (W), and is formed into a film by a sputtering film formation method.
繼而，如圖3之B所示，於遮光膜15上形成覆蓋光電轉換部12間之形狀之抗蝕劑圖案PR1，將該抗蝕劑圖案PR1作為掩膜而進行遮光膜15之蝕刻。於蝕刻結束後去除抗蝕劑圖案PR1。藉此，如圖3之C所示，於光電轉換部12上開口之圖案之遮光膜15被形成圖案。 Then, as shown in FIG. 3B, a resist pattern PR1 covering the shape between the photoelectric conversion portions 12 is formed on the light shielding film 15, and the light shielding film 15 is etched using the resist pattern PR1 as a mask. The resist pattern PR1 is removed after the etching is completed. Thereby, as shown in FIG. 3C, the light shielding film 15 of the pattern opened on the photoelectric conversion portion 12 is patterned.
其後，如圖4之A所示，於抗反射調整層14及遮光膜15上形成抗蝕劑圖案PR2。抗蝕劑圖案PR2係具有對應於光電轉換部12b之開口，並覆蓋光電轉換部12g、12r之上部的形狀。抗蝕劑圖案PR2之開口具有與對應於光電轉換部12b之遮光膜15之開口同等之大小，但只要覆蓋對應於光電轉換部12g、12r之遮光膜15之開口，則亦可稍大。 Thereafter, as shown in FIG. 4A, a resist pattern PR2 is formed on the anti-reflection adjustment layer 14 and the light shielding film 15. The resist pattern PR2 has a shape corresponding to the opening of the photoelectric conversion portion 12b and covers the upper portion of the photoelectric conversion portions 12g and 12r. The opening of the resist pattern PR2 has the same size as the opening corresponding to the light shielding film 15 of the photoelectric conversion portion 12b, but may be slightly larger as long as it covers the opening of the light shielding film 15 corresponding to the photoelectric conversion portions 12g and 12r.
繼而，使用此種抗蝕劑圖案PR2並且以遮光膜15為掩膜而進行抗反射調整層14之蝕刻，從而形成特定深度之凹部。蝕刻時，如圖4之B所示，以對應於光電轉換部12b之部分之抗反射調整層14之膜厚成為Tb(例如40nm)之方式進行蝕刻，從而形成凹部14b。於蝕刻結束後去除抗蝕劑圖案PR2。藉此，如圖4之B所示，於抗反射調整層14之對應於光電轉換部12b之位置，相對於遮光膜15以自對準形成凹部14b。 Then, the resist pattern PR2 is used and the anti-reflection adjustment layer 14 is etched using the light-shielding film 15 as a mask to form a recess of a specific depth. At the time of etching, as shown in FIG. 4B, the film thickness of the anti-reflection adjustment layer 14 corresponding to the portion of the photoelectric conversion portion 12b is etched so as to be Tb (for example, 40 nm), thereby forming the concave portion 14b. The resist pattern PR2 is removed after the etching is completed. Thereby, as shown in FIG. 4B, at the position of the anti-reflection adjustment layer 14 corresponding to the photoelectric conversion portion 12b, the concave portion 14b is formed in self-alignment with respect to the light shielding film 15.
繼而，與凹部14b之形成同樣地，以省略了圖示之抗蝕劑圖案及遮光膜15為掩膜而進行抗反射調整層14之蝕刻，如圖4之C所示，於對應於光電轉換部12g之位置以自對準形成凹部14g。凹部14g係以對應於光電轉換部12g之部分之抗反射調整層14之膜厚成為Tg(例如80nm)之方式而形成。又，對應於光電轉換部12r之部分之抗反射調整層14之膜厚Tr為成膜時之膜厚Tr(例如130nm)。該等各部分之抗反射調整層14之膜厚之關係成為Tr>Tg>Tb。藉此，如圖4之C所示，於抗反射調整層14形成具有凹部14b、14g之階差形狀。 Then, similarly to the formation of the concave portion 14b, the anti-reflection adjustment layer 14 is etched by using the resist pattern and the light-shielding film 15 (not shown) as a mask, as shown in FIG. 4C, corresponding to photoelectric conversion. The position of the portion 12g is self-aligned to form the recess 14g. The concave portion 14g is formed such that the thickness of the anti-reflection adjustment layer 14 corresponding to a portion of the photoelectric conversion portion 12g becomes Tg (for example, 80 nm). Moreover, the film thickness Tr of the anti-reflection adjustment layer 14 corresponding to the portion of the photoelectric conversion portion 12r is the film thickness Tr (for example, 130 nm) at the time of film formation. The relationship between the film thicknesses of the anti-reflection adjustment layers 14 of the respective portions is Tr>Tg>Tb. Thereby, as shown in FIG. 4C, the anti-reflection adjustment layer 14 is formed with a stepped shape having the concave portions 14b and 14g.
繼而，如圖5之A所示，於抗反射調整層14及遮光膜15上形成密接層16。密接層16例如包含丙烯酸系樹脂等有機材料，並藉由旋轉塗佈以膜厚10~70nm成膜。再者，若無需要，亦可不形成密接層16。 Then, as shown in FIG. 5A, the adhesion layer 16 is formed on the anti-reflection adjustment layer 14 and the light shielding film 15. The adhesion layer 16 contains, for example, an organic material such as an acrylic resin, and is formed into a film having a film thickness of 10 to 70 nm by spin coating. Furthermore, the adhesion layer 16 may not be formed if it is not necessary.
其後，如圖5之B所示，於密接層16上以對應於光電轉換部12之配置，並以嵌入遮光膜15之間之狀態形成對應於抗反射調整層14之膜厚Tr、Tg、Tb之各色圖案17r、17g、17b。此時，藉由使用了含有各色之色素之感光性組合物之微影法，而分別圖案形成各色圖案17r、17g、17b。 Thereafter, as shown in FIG. 5B, the film thicknesses Tr, Tg corresponding to the anti-reflection adjustment layer 14 are formed on the adhesion layer 16 in a state corresponding to the photoelectric conversion portion 12 and in a state of being embedded between the light shielding films 15. And Tb color patterns 17r, 17g, 17b. At this time, the respective color patterns 17r, 17g, and 17b are patterned by patterning using a photosensitive composition containing a dye of each color.
繼而，視需要於各色圖案17r、17g、17b上進行平坦化。藉此，於密接層16上，以嵌入遮光膜15之間之狀態形成有包含各色圖案17r、17g、17b之彩色濾光片17。 Then, planarization is performed on the respective color patterns 17r, 17g, and 17b as needed. Thereby, the color filter 17 including the color patterns 17r, 17g, and 17b is formed on the adhesion layer 16 in a state of being interposed between the light shielding films 15.
以上步驟後，如先前之圖2所示，於彩色濾光片17上形成晶載透鏡18，藉此完成固體攝像裝置1-1。 After the above steps, as shown in the previous FIG. 2, the on-chip lens 18 is formed on the color filter 17, whereby the solid-state imaging device 1-1 is completed.
以上所說明之第1實施形態之固體攝像裝置1-1係如下構成：具有對應於特定之光電轉換部12而經薄膜化之階差形狀之抗反射調整層14介隔覆蓋受光面11a之整個面而進行設置之保護層13，而設置於半導體基板11之受光面11a上。因此，於固體攝像裝置1-1中，將抗反射調整層14圖案化為階差形狀時，圖案化之損傷不會影響半導體基板11之受光面11a，可防止白點及暗電流之惡化。因此，於包含抗反射調整層14之固體攝像裝置1-1中，可不使白點及暗電流惡化，而根據以彩色濾光片17分光後之入射光之波長謀求各光電轉換部12之感度之最佳化。 The solid-state imaging device 1-1 according to the first embodiment described above is configured such that the anti-reflection adjustment layer 14 having a stepped shape corresponding to the specific photoelectric conversion portion 12 is interposed to cover the entire light-receiving surface 11a. The protective layer 13 provided on the surface is provided on the light receiving surface 11a of the semiconductor substrate 11. Therefore, when the anti-reflection adjustment layer 14 is patterned into a stepped shape in the solid-state imaging device 1-1, the damage of the pattern does not affect the light-receiving surface 11a of the semiconductor substrate 11, and deterioration of white spots and dark current can be prevented. Therefore, in the solid-state imaging device 1-1 including the anti-reflection adjustment layer 14, the sensitivity of each photoelectric conversion portion 12 can be obtained from the wavelength of the incident light split by the color filter 17 without deteriorating the white point and the dark current. Optimized.
又，於固體攝像裝置1-1中，保護層13具有均勻之膜厚，並且覆蓋半導體基板11之受光面11a之整個面。因此，於保護層13發揮作為對半導體基板11之釘紮層之功能之情形時，於對應於以彩色濾光片17分光後之入射光之波長之各光電轉換部12中，不會有對半導體基板11之釘紮效應變動從而白點及暗電流之值變動之情況。即，可防止由顏色雜訊引起之圖像品質之惡化。因此，可不變動釘紮效應，藉由具有 階差形狀之抗反射調整層14調整抗反射條件，而根據以彩色濾光片17分光後之入射光之波長謀求各光電轉換部12之感度之最佳化。 Further, in the solid-state imaging device 1-1, the protective layer 13 has a uniform film thickness and covers the entire surface of the light receiving surface 11a of the semiconductor substrate 11. Therefore, when the protective layer 13 functions as a pinning layer for the semiconductor substrate 11, the photoelectric conversion portion 12 corresponding to the wavelength of the incident light split by the color filter 17 does not have a pair. The pinning effect of the semiconductor substrate 11 fluctuates, and the values of the white point and the dark current fluctuate. That is, deterioration of image quality caused by color noise can be prevented. Therefore, the pinning effect can be changed without The anti-reflection adjustment layer 14 of the step shape adjusts the anti-reflection condition, and the sensitivity of each photoelectric conversion unit 12 is optimized in accordance with the wavelength of the incident light split by the color filter 17.
又，抗反射調整層14藉由具有與彩色濾光片17不同之折射率，而發揮作為半導體基板11之受光面11a上之多層抗反射膜之功能。進而，由於抗反射調整層14具有對應於特定之光電轉換部而經薄膜化之階差形狀，故以彩色濾光片17分光後之各色入射光於各光電轉換部12中之反射率達到最小，可使各光電轉換部12之感度最佳化。 Further, the anti-reflection adjustment layer 14 functions as a multilayer anti-reflection film on the light-receiving surface 11a of the semiconductor substrate 11 by having a refractive index different from that of the color filter 17. Further, since the anti-reflection adjustment layer 14 has a stepped shape which is thinned in accordance with the specific photoelectric conversion portion, the reflectance of each of the incident light beams split by the color filter 17 in each of the photoelectric conversion portions 12 is minimized. The sensitivity of each photoelectric conversion unit 12 can be optimized.
圖6係表示本第1實施形態之固體攝像裝置1-1中自彩色濾光片17向半導體基板11之透射率之測定結果的圖表。虛線R表示抗反射調整層14之膜厚為130nm之情形時之透射率，可知相對於波長為480~700nm左右之光顯示出95%以上之透射率。實線G表示抗反射調整層14之膜厚為80nm之情形時之透射率，可知相對於波長為460~620nm左右之光顯示出95%以上之透射率。虛線B表示抗反射調整層14之膜厚為40nm之情形時之透射率，可知相對於波長為440~600nm左右之光顯示出95%以上之透射率。 FIG. 6 is a graph showing the measurement results of the transmittance from the color filter 17 to the semiconductor substrate 11 in the solid-state imaging device 1-1 according to the first embodiment. The dotted line R indicates the transmittance when the film thickness of the anti-reflection adjustment layer 14 is 130 nm, and it is understood that the transmittance is 95% or more with respect to light having a wavelength of about 480 to 700 nm. The solid line G indicates the transmittance when the film thickness of the anti-reflection adjustment layer 14 is 80 nm, and it is understood that the transmittance is 95% or more with respect to light having a wavelength of about 460 to 620 nm. The broken line B indicates the transmittance when the film thickness of the anti-reflection adjustment layer 14 is 40 nm, and it is understood that the transmittance is 95% or more with respect to light having a wavelength of about 440 to 600 nm.
藉此可知，關於固體攝像裝置1-1，於將具有階差形狀之抗反射調整層14之各部分之膜厚Tr、Tg、Tb分別設為130nm、80nm、40nm之情形時，可將相對於紅色光(波長630nm)、綠色光(波長540nm)、藍色光(波長460nm)之透射率分別調整為95%以上。因此，可確認於固體攝像裝置1-1中，可使紅色光、綠色光、青色光分別入射之各光電轉換部12r、12g、12b之感度最佳化。 In the solid-state imaging device 1-1, when the film thicknesses Tr, Tg, and Tb of the respective portions of the anti-reflection adjustment layer 14 having the stepped shape are 130 nm, 80 nm, and 40 nm, respectively, it is possible to The transmittances of red light (wavelength 630 nm), green light (wavelength 540 nm), and blue light (wavelength 460 nm) were adjusted to 95% or more. Therefore, in the solid-state imaging device 1-1, it is possible to optimize the sensitivity of each of the photoelectric conversion units 12r, 12g, and 12b into which the red light, the green light, and the cyan light are incident.
又，於固體攝像裝置1-1中，彩色濾光片17係嵌入遮光膜15之間之構成。因此，晶載透鏡18與半導體基板11之距離變短，可抑制混色，並使光電轉換部12中之受光感度提高。其結果，可提供混色得到抑制，顏色再現性高之固體攝像裝置1-1。 Further, in the solid-state imaging device 1-1, the color filter 17 is interposed between the light shielding films 15. Therefore, the distance between the crystal lens 18 and the semiconductor substrate 11 is shortened, color mixing can be suppressed, and the light sensitivity in the photoelectric conversion unit 12 can be improved. As a result, it is possible to provide the solid-state imaging device 1-1 in which the color mixture is suppressed and the color reproducibility is high.
又，抗反射調整層14係以遮光膜15為掩膜而圖案化而成之層， 故遮光膜15之下部分之抗反射調整層14未被薄膜化而保持成膜時之膜厚，可於遮光膜15與半導體基板11之受光面11a之間確保一定之距離。藉此，於將遮光膜15設為浮動電極之情形時，亦可防止白點及暗電流之惡化。 Further, the anti-reflection adjustment layer 14 is a layer formed by patterning the light-shielding film 15 as a mask. Therefore, the anti-reflection adjustment layer 14 under the light-shielding film 15 is not thinned to maintain the film thickness at the time of film formation, and a certain distance can be secured between the light-shielding film 15 and the light-receiving surface 11a of the semiconductor substrate 11. Thereby, when the light shielding film 15 is used as a floating electrode, deterioration of white spots and dark current can be prevented.
再者，本實施形態係說明了對應於光電轉換部12r之部分之抗反射調整層14之膜厚Tr與遮光膜15下部分之抗反射調整層14之膜厚相同的情形。然而並不限於此，亦可於抗反射調整層14之對應於光電轉換部12r之部分設置凹部。於此情形時，抗反射調整層14之各部分之膜厚Tr、Tg、Tb之關係亦為Tr>Tg>Tb。 In the present embodiment, the film thickness Tr of the anti-reflection adjustment layer 14 corresponding to the portion of the photoelectric conversion portion 12r and the film thickness of the anti-reflection adjustment layer 14 of the lower portion of the light shielding film 15 are the same. However, it is not limited thereto, and a concave portion may be provided in a portion of the anti-reflection adjustment layer 14 corresponding to the photoelectric conversion portion 12r. In this case, the relationship between the film thicknesses Tr, Tg, and Tb of the respective portions of the anti-reflection adjustment layer 14 is also Tr>Tg>Tb.
又，本實施形態係對彩色濾光片17具有RGB之3色圖案之情形進行說明，但並不限於此，彩色濾光片17亦可具有2色或4色以上之圖案。於此情形時，抗反射調整層14根據彩色濾光片17具有之圖案而成為被薄膜化為2級或4級以上之階差形狀。 Further, in the present embodiment, the case where the color filter 17 has a three-color pattern of RGB is described. However, the color filter 17 may have a pattern of two or four colors or more. In this case, the anti-reflection adjustment layer 14 is formed into a stepped shape of a second order or a fourth order or more according to the pattern of the color filter 17.
又，於遮光膜15與彩色濾光片17之密接性良好之情形時，亦可省略密接層16。 Further, when the adhesion between the light shielding film 15 and the color filter 17 is good, the adhesion layer 16 may be omitted.
圖7係表示第1實施形態之固體攝像裝置之變化例1之構成的主要部分剖面圖。如圖7所示，變化例1之固體攝像裝置1-1a與使用圖2而說明之固體攝像裝置1-1之不同之處在於：彩色濾光片17於抗反射調整層14上僅設置於遮光膜15之開口內。再者，對與第1實施形態共用之構成要素標註相同之符號，並省略重複之說明。 FIG. 7 is a cross-sectional view of a main portion showing a configuration of a first modification of the solid-state imaging device according to the first embodiment. As shown in FIG. 7, the solid-state imaging device 1-1a of the first modification is different from the solid-state imaging device 1-1 described with reference to FIG. 2 in that the color filter 17 is provided only on the anti-reflection adjustment layer 14 Inside the opening of the light shielding film 15. The constituent elements that are the same as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.
變化例1之固體攝像裝置1-1a之特徵在於：彩色濾光片17於抗反射調整層14上僅設置於遮光膜15之開口內。於遮光膜15之開口內在底面及側壁設置有密接層16，且於此種遮光膜15之開口內介隔密接層16而設置有彩色濾光片17。彩色濾光片17之上表面與遮光膜15之上表面 為相同高度，並形成平坦之面。於以彩色濾光片17與遮光膜15而形成之平坦面上設置晶載透鏡18。 The solid-state imaging device 1-1a according to the first modification is characterized in that the color filter 17 is provided only in the opening of the light shielding film 15 on the anti-reflection adjustment layer 14. The adhesion layer 16 is provided on the bottom surface and the side wall in the opening of the light shielding film 15, and the color filter 17 is provided in the opening of the light shielding film 15 so as to interpose the adhesion layer 16. The upper surface of the color filter 17 and the upper surface of the light shielding film 15 The same height and a flat surface. The crystal carrier lens 18 is provided on a flat surface formed by the color filter 17 and the light shielding film 15.
變化例1之固體攝像裝置1-1a之製造方法之特徵在於藉由以遮光膜15為掩膜之各色圖案17r、17g、17b之圖案形成而形成彩色濾光片17，並以如下方式形成。 The method of manufacturing the solid-state imaging device 1-1a according to the first modification is characterized in that the color filter 17 is formed by patterning the color patterns 17r, 17g, and 17b having the light shielding film 15 as a mask, and is formed as follows.
首先，於方才使用圖4之C而說明之將抗反射調整層14圖案化為階差形狀之步驟之前，係以與第1實施形態之固體攝像裝置1-1相同之方式形成。 First, before the step of patterning the anti-reflection adjustment layer 14 into a stepped shape, which is described using C in Fig. 4, it is formed in the same manner as the solid-state imaging device 1-1 of the first embodiment.
繼而，於抗反射調整層14及遮光膜15上成膜密接層16，並藉由回蝕而去除遮光膜15上之密接層16。藉此，如圖7所示，於遮光膜15之開口內之底面及側壁形成有密接層16。 Then, the adhesion layer 16 is formed on the anti-reflection adjustment layer 14 and the light shielding film 15, and the adhesion layer 16 on the light shielding film 15 is removed by etch back. Thereby, as shown in FIG. 7, the adhesion layer 16 is formed in the bottom surface and the side wall in the opening of the light-shielding film 15.
繼而，於密接層16上以對應於光電轉換部12之配置，且以嵌入遮光膜15之間之狀態形成對應於抗反射調整層14之膜厚Tr、Tg、Tb之各色圖案17r、17g、17b。此時，例如藉由使用了含有各色之色素之感光性組合物之微影法分別圖案形成各色圖案17r、17g。其後，塗佈對應於圖案17b之感光性組合物並使其硬化。繼而，進行平坦化至各色圖案17r、17g、17b成為與遮光膜15相同之高度為止。藉此，如圖7所示，各色圖案17r、17g、17b成為相對於遮光膜15以自對準而形成者，且彩色濾光片17僅形成於遮光膜15之開口內。 Then, the color patterns 17r, 17g corresponding to the film thicknesses Tr, Tg, and Tb of the anti-reflection adjustment layer 14 are formed on the adhesion layer 16 in a state corresponding to the photoelectric conversion portion 12 and in a state of being embedded between the light shielding films 15. 17b. At this time, for example, the respective color patterns 17r and 17g are respectively patterned by lithography using a photosensitive composition containing a dye of each color. Thereafter, the photosensitive composition corresponding to the pattern 17b is applied and cured. Then, the planarization is performed until the respective color patterns 17r, 17g, and 17b are at the same height as the light shielding film 15. As a result, as shown in FIG. 7, the color patterns 17r, 17g, and 17b are formed to be self-aligned with respect to the light shielding film 15, and the color filter 17 is formed only in the opening of the light shielding film 15.
其後，如圖7所示，於彩色濾光片17及遮光膜15上形成晶載透鏡18，藉此完成固體攝像裝置1-1a。 Thereafter, as shown in FIG. 7, the crystal carrying lens 18 is formed on the color filter 17 and the light shielding film 15, whereby the solid-state imaging device 1-1a is completed.
關於以上所說明之變化例1之固體攝像裝置1-1a，亦可獲得與第1實施形態相同之效果。 The solid-state imaging device 1-1a of the first modification described above can also obtain the same effects as those of the first embodiment.
進而，於固體攝像裝置1-1a中，抗反射調整層14藉由以遮光膜15 為掩膜之圖案化，而以自對準形成為具有對應於特定之光電轉換部12g、12b之凹部14g、14b之階差形狀。進而，構成彩色濾光片17之各色圖案17r、17g、17b係相對於遮光膜15以自對準而形成。因此，抗反射調整層14與彩色濾光片17均為相對於遮光膜15以自對準而形成者，因此，不會產生抗反射調整層14與彩色濾光片17之位置對準偏移。藉此，可提供精度更高之固體攝像裝置1-1a。 Further, in the solid-state imaging device 1-1a, the anti-reflection adjustment layer 14 is provided with the light shielding film 15 For patterning of the mask, self-alignment is formed to have a stepped shape corresponding to the recesses 14g, 14b of the specific photoelectric conversion portions 12g, 12b. Further, the color patterns 17r, 17g, and 17b constituting the color filter 17 are formed in self-alignment with respect to the light shielding film 15. Therefore, both the anti-reflection adjustment layer 14 and the color filter 17 are formed to be self-aligned with respect to the light shielding film 15, and therefore, the positional deviation of the anti-reflection adjustment layer 14 and the color filter 17 is not generated. . Thereby, the solid-state imaging device 1-1a with higher precision can be provided.
圖8係表示第1實施形態之固體攝像裝置之變化例2之構成的主要部分剖面圖。如圖8所示，變化例2之固體攝像裝置1-1b與使用圖2說明之固體攝像裝置1-1之不同之處在於：抗反射調整層14具有對應於特定之光電轉換部12而經薄膜化為2級膜厚之階差形狀。再者，對與第1實施形態共用之構成要素標註相同之符號，並省略重複之說明。 FIG. 8 is a cross-sectional view showing the configuration of a second modification of the solid-state imaging device according to the first embodiment. As shown in FIG. 8, the solid-state imaging device 1-1b of Modification 2 is different from the solid-state imaging device 1-1 described with reference to FIG. 2 in that the anti-reflection adjustment layer 14 has a corresponding photoelectric conversion portion 12 The film is formed into a step shape of a film thickness of the second order. The constituent elements that are the same as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.
變化例2之固體攝像裝置1-1b之特徵在於：相對於具有RGB之各色圖案之彩色濾光片17，抗反射調整層14具有被薄膜化為2級膜厚之階差形狀。例如於彩色濾光片17具有RGB之各色圖案17r、17g、17b之情形時，對應於各光電轉換部12r、12g、12b之部分之抗反射調整層14之各膜厚為Tr、Tg及Tb。該等膜厚Tr、Tg及Tb並非相互不同而是呈2級不同，例如，如圖8所示成為Tr>Tg=Tb之關係。於此情形時，例如將膜厚Tr設為130nm，將膜厚Tg、Tb設為40nm。又，亦可為Tr=Tg>Tb之關係，於此情形時，例如將膜厚Tr、Tg設為130nm，將膜厚Tb設為40nm。 The solid-state imaging device 1-1b according to the second modification is characterized in that the anti-reflection adjustment layer 14 has a stepped shape which is thinned into a second-order film thickness with respect to the color filter 17 having the respective color patterns of RGB. For example, when the color filter 17 has the RGB color patterns 17r, 17g, and 17b, the film thicknesses of the anti-reflection adjustment layers 14 corresponding to the respective photoelectric conversion portions 12r, 12g, and 12b are Tr, Tg, and Tb. . The film thicknesses Tr, Tg, and Tb are not different from each other but are different in two stages. For example, as shown in FIG. 8, the relationship of Tr>Tg=Tb is obtained. In this case, for example, the film thickness Tr is set to 130 nm, and the film thicknesses Tg and Tb are set to 40 nm. Further, the relationship may be Tr=Tg>Tb. In this case, for example, the film thicknesses Tr and Tg are set to 130 nm, and the film thickness Tb is set to 40 nm.
關於以上所說明之變化例2之固體攝像裝置1-1b，亦可獲得與第1實施形態相同之效果。 The solid-state imaging device 1-1b according to the second modification described above can also obtain the same effects as those of the first embodiment.
進而，變化例2之固體攝像裝置1-1b係如下構成：相對於具有3色 之圖案之彩色濾光片17，抗反射調整層14具有被薄膜化為2級膜厚之階差形狀。因此，於將抗反射調整層14圖案化為階差形狀時，削減了使用之抗蝕劑圖案及步驟數。因此，可提供製造效率高之固體攝像裝置1-1b。 Further, the solid-state imaging device 1-1b according to the second modification is configured to have three colors with respect to The pattern color filter 17 has an anti-reflection adjustment layer 14 having a stepped shape which is thinned into a second-order film thickness. Therefore, when the anti-reflection adjustment layer 14 is patterned into a step shape, the resist pattern and the number of steps used are reduced. Therefore, the solid-state imaging device 1-1b having high manufacturing efficiency can be provided.
再者，於變化例2中，對彩色濾光片17具有RGB之各色圖案之情形進行了說明，但並不限於此，彩色濾光片17亦可具有4色以上之圖案。例如，於彩色濾光片17具有4色之圖案之情形時，抗反射調整層14成為被薄膜化為2級或3級膜厚之階差形狀。 Further, in the second modification, the case where the color filter 17 has the RGB color pattern has been described. However, the color filter 17 may have a pattern of four or more colors. For example, when the color filter 17 has a pattern of four colors, the anti-reflection adjustment layer 14 is formed into a stepped shape of a film thickness of two or three.
圖9係表示第2實施形態之固體攝像裝置之構成之主要部分剖面圖。以下基於該圖對第2實施形態之固體攝像裝置1-2之特徵性構成進行說明。再者，於本第2實施形態及其變化例中，對與第1實施形態共用之構成要素標註相同之符號，並省略重複之說明。 FIG. 9 is a cross-sectional view showing the configuration of a solid-state imaging device according to a second embodiment. The characteristic configuration of the solid-state imaging device 1-2 according to the second embodiment will be described below based on the drawing. In the second embodiment and its modifications, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.
圖9所示之固體攝像裝置1-2與使用圖2說明之第1實施形態之固體攝像裝置1-1之不同之處在於：抗反射調整層24於保護層13上設置於遮光膜15之上層。而且，抗反射調整層24具有以遮光膜15為掩膜之蝕刻所形成之階差形狀。其他構成與第1實施形態相同。然而，於固體攝像裝置1-2中不設置密接層，於抗反射調整層24及遮光膜15上，不介隔密接層而直接設置彩色濾光片17。再者，亦可設置密接層。 The solid-state imaging device 1-2 shown in FIG. 9 is different from the solid-state imaging device 1-1 of the first embodiment described with reference to FIG. 2 in that the anti-reflection adjustment layer 24 is provided on the protective layer 13 on the light shielding film 15. upper layer. Further, the anti-reflection adjustment layer 24 has a step shape formed by etching using the light-shielding film 15 as a mask. The other configuration is the same as that of the first embodiment. However, in the solid-state imaging device 1-2, the adhesion layer is not provided, and the color filter 17 is directly provided on the anti-reflection adjustment layer 24 and the light-shielding film 15 without interposing the adhesion layer. Furthermore, an adhesive layer can also be provided.
於固體攝像裝置1-2中，於保護層13上遮光膜15被形成圖案，並於遮光膜15之間設置有抗反射調整層24(24r、24g、24b)。 In the solid-state imaging device 1-2, the light shielding film 15 is patterned on the protective layer 13, and an anti-reflection adjustment layer 24 (24r, 24g, 24b) is provided between the light shielding films 15.
抗反射調整層24為由對應於各光電轉換部12r、12g、12b而經薄膜化之抗反射調整層24r、24g、24b所構成之階差形狀。該等抗反射調整層24r、24g、24b之各膜厚為Tr、Tg及Tb，並與第1實施形態同樣地成為Tr>Tg>Tb之關係。 The anti-reflection adjustment layer 24 is a stepped shape formed by the anti-reflection adjustment layers 24r, 24g, and 24b which are thinned in accordance with the respective photoelectric conversion portions 12r, 12g, and 12b. Each of the anti-reflection adjustment layers 24r, 24g, and 24b has a thickness of Tr, Tg, and Tb, and has a relationship of Tr>Tg>Tb as in the first embodiment.
又，抗反射調整層24係以遮光膜15為掩膜而進行蝕刻而成之層。抗反射調整層24r、24g、24b之中至少抗反射調整層24g、24b為以遮光膜15為掩膜而進行蝕刻而成之部分。因此，抗反射調整層24g、24b之各膜厚Tg、Tb為遮光膜15之膜厚以下，且抗反射調整層24g、24b僅設置於遮光膜15之開口內。 Further, the anti-reflection adjustment layer 24 is a layer obtained by etching the light-shielding film 15 as a mask. Among the anti-reflection adjustment layers 24r, 24g, and 24b, at least the anti-reflection adjustment layers 24g and 24b are formed by etching the light-shielding film 15 as a mask. Therefore, the film thicknesses Tg and Tb of the anti-reflection adjustment layers 24g and 24b are equal to or less than the film thickness of the light-shielding film 15, and the anti-reflection adjustment layers 24g and 24b are provided only in the openings of the light-shielding film 15.
另一方面，抗反射調整層24r亦可為以遮光膜15為掩膜而進行蝕刻而成之部分。於此情形時，抗反射調整層24r與抗反射調整層24g、24b同樣地僅設置於遮光膜15之開口內。又，抗反射調整層24r亦可如圖示般為未被薄膜化而保持成膜時之膜厚之部分。於此情形時，抗反射調整層24r係以嵌入遮光膜15之方式進行設置，即嵌入遮光膜15之開口內並且覆蓋遮光膜15而進行設置。 On the other hand, the anti-reflection adjustment layer 24r may be a portion obtained by etching the light-shielding film 15 as a mask. In this case, the anti-reflection adjustment layer 24r is provided only in the opening of the light shielding film 15 similarly to the anti-reflection adjustment layers 24g and 24b. Further, the anti-reflection adjustment layer 24r may be a portion of the film thickness at the time of film formation without being thinned as shown. In this case, the anti-reflection adjustment layer 24r is provided so as to be embedded in the light-shielding film 15, that is, to be embedded in the opening of the light-shielding film 15 and to cover the light-shielding film 15.
此種抗反射調整層24使用第1實施形態中所說明之材料。 The material described in the first embodiment is used for the anti-reflection adjustment layer 24.
圖10及圖11係用以說明第2實施形態之固體攝像裝置1-2之製造方法之剖面步驟圖。以下，基於該等圖而對固體攝像裝置1-2之製造方法進行說明。 FIG. 10 and FIG. 11 are cross-sectional process diagrams for explaining a method of manufacturing the solid-state imaging device 1-2 according to the second embodiment. Hereinafter, a method of manufacturing the solid-state imaging device 1-2 will be described based on the drawings.
首先，如圖10之A所示，與說明第1實施形態之固體攝像裝置1-1之製造方法同樣地，準備具有複數個光電轉換部12之半導體基板11，並於半導體基板11之與受光面11a相反側形成配線層19。繼而，於半導體基板11之受光面11a上形成保護層13，並於保護層13上圖案形成遮光膜15。 First, as shown in FIG. 10A, in the same manner as the manufacturing method of the solid-state imaging device 1-1 according to the first embodiment, a semiconductor substrate 11 having a plurality of photoelectric conversion portions 12 is prepared, and the semiconductor substrate 11 is received and received. The wiring layer 19 is formed on the opposite side of the surface 11a. Then, a protective layer 13 is formed on the light receiving surface 11a of the semiconductor substrate 11, and the light shielding film 15 is patterned on the protective layer 13.
繼而，如圖10之B所示，於保護層13上覆蓋遮光膜15而形成抗反射調整層24。此時，以與先前使用圖9說明之抗反射調整層24之對應於光電轉換部12r之部分之膜厚Tr相同的膜厚形成抗反射調整層24。 Then, as shown in FIG. 10B, the light-shielding film 15 is covered on the protective layer 13 to form the anti-reflection adjustment layer 24. At this time, the anti-reflection adjustment layer 24 is formed with the same film thickness as the film thickness Tr of the portion of the anti-reflection adjustment layer 24 described above with reference to FIG. 9 corresponding to the photoelectric conversion portion 12r.
繼而，如圖10之C所示，於抗反射調整層24上形成抗蝕劑圖案PR3。抗蝕劑圖案PR3具有對應於光電轉換部12b之開口，並為覆蓋光 電轉換部12g、12r之上部之形狀。抗蝕劑圖案PR3之開口具有與對應於光電轉換部12b之遮光膜15之開口同等之大小，但只要覆蓋對應於光電轉換部12g、12r之遮光膜15之開口，則亦可稍大。 Then, as shown in FIG. 10C, a resist pattern PR3 is formed on the anti-reflection adjustment layer 24. The resist pattern PR3 has an opening corresponding to the photoelectric conversion portion 12b and is a cover light The shape of the upper portion of the electrical conversion portions 12g and 12r. The opening of the resist pattern PR3 has the same size as the opening corresponding to the light shielding film 15 of the photoelectric conversion portion 12b, but may be slightly larger as long as it covers the opening of the light shielding film 15 corresponding to the photoelectric conversion portions 12g and 12r.
繼而，使用此種抗蝕劑圖案PR3，並且以遮光膜15為掩膜而進行抗反射調整層24之蝕刻，如圖11之A所示，對於遮光膜15以自對準形成對應於光電轉換部12b且膜厚為Tb之抗反射調整層24b。於蝕刻結束後去除抗蝕劑圖案PR3。藉此，於對應於光電轉換部12b之遮光膜15之開口內，形成膜厚Tb之抗反射調整層24b。 Then, the resist pattern PR3 is used, and the anti-reflection adjustment layer 24 is etched using the light-shielding film 15 as a mask, as shown in FIG. 11A, the self-alignment is formed for the light-shielding film 15 corresponding to photoelectric conversion. The portion 12b is an anti-reflection adjustment layer 24b having a film thickness of Tb. The resist pattern PR3 is removed after the etching is completed. Thereby, the anti-reflection adjustment layer 24b having the film thickness Tb is formed in the opening of the light shielding film 15 corresponding to the photoelectric conversion portion 12b.
繼而，與抗反射調整層24b之形成同樣地，以遮光膜15為掩膜而進行抗反射調整層24之蝕刻，如圖11之B所示，於對應於光電轉換部12g之遮光膜15之開口內，對於遮光膜15以自對準而形成膜厚Tg之抗反射調整層24g。從而剩餘之未被蝕刻之抗反射調整層24之部分成為對應於光電轉換部12r且膜厚為Tr之抗反射調整層24r。該等抗反射調整層24r、24g、24b之各膜厚Tr、Tg及Tb之關係成為Tr>Tg>Tb。藉此，形成由抗反射調整層24r、24g、24b所構成之階差形狀之抗反射調整層24。 Then, similarly to the formation of the anti-reflection adjustment layer 24b, the anti-reflection adjustment layer 24 is etched using the light-shielding film 15 as a mask, as shown in FIG. 11B, in the light-shielding film 15 corresponding to the photoelectric conversion portion 12g. In the opening, the anti-reflection adjustment layer 24g having a film thickness Tg is formed in self-alignment with the light shielding film 15. Thus, a portion of the remaining unetched anti-reflection adjustment layer 24 becomes an anti-reflection adjustment layer 24r corresponding to the photoelectric conversion portion 12r and having a film thickness Tr. The relationship between the respective film thicknesses Tr, Tg, and Tb of the anti-reflection adjustment layers 24r, 24g, and 24b is Tr>Tg>Tb. Thereby, an anti-reflection adjustment layer 24 having a stepped shape composed of the anti-reflection adjustment layers 24r, 24g, and 24b is formed.
其後，如圖10所示，於抗反射調整層24上，以對應於光電轉換部12r、12g、12b之配置，且以嵌入遮光膜15之間之狀態形成彩色濾光片17，該彩色濾光片17具有對應於抗反射調整層14之膜厚Tr、Tg、Tb之各色圖案17r、17g、17b。繼而，於彩色濾光片17上形成晶載透鏡18，藉此完成固體攝像裝置1-2。 Thereafter, as shown in FIG. 10, a color filter 17 is formed on the anti-reflection adjustment layer 24 in a state corresponding to the arrangement of the photoelectric conversion portions 12r, 12g, and 12b, and between the light-shielding films 15 is formed. The filter 17 has color patterns 17r, 17g, and 17b corresponding to the film thicknesses Tr, Tg, and Tb of the anti-reflection adjustment layer 14. Then, the on-chip lens 18 is formed on the color filter 17, whereby the solid-state imaging device 1-2 is completed.
關於以上所說明之第2實施形態之固體攝像裝置1-2，亦可獲得與第1實施形態相同之效果。即，固體攝像裝置1-2係如下構成：具有對應於特定之光電轉換部12而經薄膜化之階差形狀之抗反射調整層24介隔覆蓋受光面11a之整個面而設置之保護層13，而設置於半導體基板 11之受光面11a上。因此，關於固體攝像裝置1-2，於將抗反射調整層24圖案化為階差形狀時，圖案化之損傷不會影響半導體基板11之受光面11a，可防止白點及暗電流之惡化。因此，於具備抗反射調整層24之固體攝像裝置1-2中，可不使白點及暗電流惡化，而根據以彩色濾光片17分光後之入射光之波長謀求各光電轉換部12之感度之最佳化。 The solid-state imaging device 1-2 according to the second embodiment described above can also obtain the same effects as those of the first embodiment. In other words, the solid-state imaging device 1-2 is configured such that the anti-reflection adjustment layer 24 having a stepped shape corresponding to the specific photoelectric conversion portion 12 is provided with a protective layer 13 that covers the entire surface of the light-receiving surface 11a. And disposed on a semiconductor substrate 11 on the light receiving surface 11a. Therefore, in the solid-state imaging device 1-2, when the anti-reflection adjustment layer 24 is patterned into a stepped shape, the damage of the pattern does not affect the light-receiving surface 11a of the semiconductor substrate 11, and deterioration of white spots and dark current can be prevented. Therefore, in the solid-state imaging device 1-2 including the anti-reflection adjustment layer 24, the sensitivity of each photoelectric conversion portion 12 can be obtained from the wavelength of the incident light split by the color filter 17 without deteriorating the white point and the dark current. Optimized.
又，於固體攝像裝置1-2中，與第1實施形態同樣地，保護層13具有均勻之膜厚並且覆蓋半導體基板11之受光面11a之整個面。因此，於保護層13發揮作為對半導體基板11之釘紮層之功能之情形時，可不變動釘紮效應，藉由具有階差形狀之抗反射調整層24調整抗反射條件，而根據以彩色濾光片17分光後之入射光之波長謀求各光電轉換部12之感度之最佳化。 In the solid-state imaging device 1-2, as in the first embodiment, the protective layer 13 has a uniform film thickness and covers the entire surface of the light-receiving surface 11a of the semiconductor substrate 11. Therefore, when the protective layer 13 functions as a pinning layer for the semiconductor substrate 11, the anti-reflection condition can be adjusted by the anti-reflection adjustment layer 24 having a stepped shape without changing the pinning effect, and according to the color filter The wavelength of the incident light after the light sheet 17 is split is optimized for the sensitivity of each photoelectric conversion unit 12.
又，抗反射調整層24與第1實施形態同樣地藉由具有與彩色濾光片17不同之折射率，而發揮作為半導體基板11之受光面11a上之多層抗反射膜之功能。進而，由於抗反射調整層24具有對應於特定之光電轉換部而經薄膜化之階差形狀，故以彩色濾光片17分光後之各色入射光於各光電轉換部12中之反射率達到最小，可使各光電轉換部12之感度最佳化。 In the same manner as in the first embodiment, the anti-reflection adjustment layer 24 functions as a multilayer anti-reflection film on the light-receiving surface 11a of the semiconductor substrate 11 by having a refractive index different from that of the color filter 17. Further, since the anti-reflection adjustment layer 24 has a stepped shape which is thinned in accordance with the specific photoelectric conversion portion, the reflectance of each of the incident light beams split by the color filter 17 in each of the photoelectric conversion portions 12 is minimized. The sensitivity of each photoelectric conversion unit 12 can be optimized.
又，於固體攝像裝置1-2中，與第1實施形態同樣地為彩色濾光片17嵌入遮光膜15之間之構成。因此，晶載透鏡18與半導體基板11之距離變短，可抑制混色，使光電轉換部12中之受光感度提高。其結果，可提供混色得到抑制，顏色再現性高之固體攝像裝置1-2。 In the solid-state imaging device 1-2, the color filter 17 is placed between the light-shielding films 15 in the same manner as in the first embodiment. Therefore, the distance between the crystal lens 18 and the semiconductor substrate 11 is shortened, color mixing can be suppressed, and the light sensitivity in the photoelectric conversion unit 12 can be improved. As a result, it is possible to provide the solid-state imaging device 1-2 in which the color mixture is suppressed and the color reproducibility is high.
再者，亦可於本實施形態之固體攝像裝置1-2中組合方才說明之第1實施形態之變化例2(參照圖8)。於此情形時，相對於具有3色之圖案之彩色濾光片17，抗反射調整層24具有對應於特定之光電轉換部12被薄膜化成2級膜厚之階差形狀。抗反射調整層24r、24g、24b之各膜厚Tr、Tg、Tb係以成為Tr>Tg=Tb、或Tr=Tg>Tb之關係之方式進 行調整。 In addition, the second embodiment (see FIG. 8) of the first embodiment will be described in combination with the solid-state imaging device 1-2 of the present embodiment. In this case, the anti-reflection adjustment layer 24 has a step shape corresponding to the specific photoelectric conversion portion 12 being thinned into a second-order film thickness with respect to the color filter 17 having a pattern of three colors. The film thicknesses Tr, Tg, and Tb of the anti-reflection adjustment layers 24r, 24g, and 24b are such that Tr>Tg=Tb or Tr=Tg>Tb Line adjustment.
又，亦可於抗反射調整層24及遮光膜15上，介隔密接層而設置彩色濾光片17。 Further, the color filter 17 may be provided on the anti-reflection adjustment layer 24 and the light-shielding film 15 via the adhesion layer.
圖12係表示第2實施形態之固體攝像裝置之變化例1之構成的主要部分剖面圖。如圖12所示，變化例1之固體攝像裝置1-2a與使用圖10說明之固體攝像裝置1-2之不同之處在於：抗反射調整層24為於保護層13上設置於遮光膜15之上層及下層之積層構造。即，為由設置於遮光膜15之下層之抗反射調整層24-1、及設置於遮光膜15之上層之抗反射調整層24-2構成的積層構造。再者，對與第2實施形態共用之構成要素標註相同之符號，並省略重複之說明。 FIG. 12 is a cross-sectional view of a principal part showing a configuration of a first modification of the solid-state imaging device according to the second embodiment. As shown in FIG. 12, the solid-state imaging device 1-2a of the first modification is different from the solid-state imaging device 1-2 described with reference to FIG. 10 in that the anti-reflection adjustment layer 24 is provided on the protective layer 13 on the light shielding film 15. The laminated structure of the upper layer and the lower layer. That is, it is a laminated structure composed of the anti-reflection adjustment layer 24-1 provided under the light shielding film 15 and the anti-reflection adjustment layer 24-2 provided on the upper layer of the light shielding film 15. The components that are the same as those in the second embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.
變化例1之固體攝像裝置1-2a係於圖9所示之固體攝像裝置1-2中，於保護層13與具有階差形狀之抗反射調整層24之間追加進一步之抗反射調整用之層而成的構成。如圖12所示，此種變化例1之固體攝像裝置1-2a具有積層構造之抗反射調整層24，該積層構造之抗反射調整層24係由設置於遮光膜15之下層之抗反射調整層24-1、及設置於遮光膜15之上層之抗反射調整層24-2所構成。該積層構造中至少上層之抗反射調整層24-2具有以遮光膜15為掩膜之蝕刻所形成之階差形狀。即，於保護層13上成膜有下層之抗反射調整層24-1，於其上遮光膜15被形成圖案，並於遮光膜15之間呈階差形狀地設置有上層之抗反射調整層24-2。 The solid-state imaging device 1-2a according to the first modification is incorporated in the solid-state imaging device 1-2 shown in FIG. 9, and further anti-reflection adjustment is added between the protective layer 13 and the anti-reflection adjustment layer 24 having a stepped shape. The composition of the layer. As shown in FIG. 12, the solid-state imaging device 1-2a of the first modification has an anti-reflection adjustment layer 24 having a laminated structure, and the anti-reflection adjustment layer 24 of the laminated structure is adjusted by anti-reflection provided on the lower layer of the light-shielding film 15. The layer 24-1 and the anti-reflection adjustment layer 24-2 provided on the upper layer of the light shielding film 15 are formed. In the laminated structure, at least the upper anti-reflection adjustment layer 24-2 has a stepped shape formed by etching using the light-shielding film 15 as a mask. That is, the lower layer anti-reflection adjustment layer 24-1 is formed on the protective layer 13, and the upper light-shielding film 15 is patterned, and an anti-reflection adjustment layer of the upper layer is provided in a stepped shape between the light-shielding films 15. 24-2.
關於此種積層構造之抗反射調整層24，對應於各光電轉換部12r、12g、12b之部分之各膜厚為Tr、Tg及Tb，且與第2實施形態同樣地成為Tr>Tg>Tb之關係。各膜厚Tr、Tg及Tb為將下層之抗反射調整層24-1與上層之抗反射調整層24-2相加而成之膜厚。 In the anti-reflection adjustment layer 24 of the laminated structure, the film thicknesses of the respective portions of the photoelectric conversion portions 12r, 12g, and 12b are Tr, Tg, and Tb, and Tr>Tg>Tb as in the second embodiment. Relationship. Each of the film thicknesses Tr, Tg, and Tb is a film thickness obtained by adding the lower anti-reflection adjustment layer 24-1 and the upper anti-reflection adjustment layer 24-2.
抗反射調整層24-1、24-2可為包含相同材料之層，亦可為包含相互不同之材料之層。於為包含相互不同之材料之層之情形時，抗反射調整層24-1、24-2相互之折射率之差較佳為0.1以內。此種抗反射調整層24-1、24-2使用第1實施形態中所說明之材料。 The anti-reflection adjustment layers 24-1, 24-2 may be layers containing the same material, or may be layers containing materials different from each other. In the case of a layer containing mutually different materials, the difference in refractive index between the anti-reflection adjustment layers 24-1, 24-2 is preferably within 0.1. The materials described in the first embodiment are used for the anti-reflection adjustment layers 24-1 and 24-2.
關於以上所說明之變化例1之固體攝像裝置1-2a，亦可獲得與第2實施形態相同之效果。 The solid-state imaging device 1-2a according to the first modification described above can also obtain the same effects as those of the second embodiment.
再者，亦可不僅上層之抗反射調整層24-2具有階差形狀，下層之抗反射調整層24-1亦具有階差形狀。於此情形時，可首先積層成膜下層之抗反射調整層24-1及上層之抗反射調整層24-2，其後，繼上層之抗反射調整層24-2之蝕刻後對下層之抗反射調整層24-1進行蝕刻。或者亦可先進行下層之抗反射調整層24-1之蝕刻，其後，成膜上層之抗反射調整層24-2並進行蝕刻。 Furthermore, not only the anti-reflection adjustment layer 24-2 of the upper layer may have a step shape, but also the anti-reflection adjustment layer 24-1 of the lower layer may have a step shape. In this case, the anti-reflection adjustment layer 24-1 of the lower layer and the anti-reflection adjustment layer 24-2 of the upper layer may be laminated first, and then the anti-reflection adjustment layer 24-2 is etched against the lower layer after the etching of the anti-reflection adjustment layer 24-2 of the upper layer. The reflection adjustment layer 24-1 is etched. Alternatively, etching of the lower anti-reflection adjustment layer 24-1 may be performed first, and then the upper anti-reflection adjustment layer 24-2 is formed and etched.
又，抗反射調整層24並不限於2層，亦可為由3層以上之複數層構成之積層構造。於此情形時，至少最上層具有階差形狀。 Further, the anti-reflection adjustment layer 24 is not limited to two layers, and may have a laminated structure composed of a plurality of layers of three or more layers. In this case, at least the uppermost layer has a step shape.
圖13係表示第3實施形態之固體攝像裝置之構成之主要部分剖面圖。以下基於該圖而對第3實施形態之固體攝像裝置1-3之特徵性構成進行說明。再者，於本第3實施形態中，對與第1實施形態共用之構成要素標註相同之符號，並省略重複之說明。 FIG. 13 is a cross-sectional view showing the configuration of a solid-state imaging device according to a third embodiment. The characteristic configuration of the solid-state imaging device 1-3 according to the third embodiment will be described below based on the drawing. In the third embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.
圖13所示之固體攝像裝置1-3與使用圖2說明之第1實施形態之固體攝像裝置1-1之不同之處在於：抗反射調整層34於保護層13上設置於遮光膜15之上層。其他構成與第1實施形態相同。然而，於固體攝像裝置1-3中不設置密接層，於抗反射調整層34上不介隔密接層而直 接設置彩色濾光片17。又，彩色濾光片17不嵌入至遮光膜15之間而設置於抗反射調整層34上。再者，亦可設置密接層。 The solid-state imaging device 1-3 shown in FIG. 13 is different from the solid-state imaging device 1-1 of the first embodiment described with reference to FIG. 2 in that the anti-reflection adjustment layer 34 is provided on the protective layer 13 on the light shielding film 15. upper layer. The other configuration is the same as that of the first embodiment. However, in the solid-state imaging device 1-3, the adhesion layer is not provided, and the anti-reflection adjustment layer 34 is not interposed between the adhesion layers. The color filter 17 is connected. Further, the color filter 17 is not interposed between the light shielding films 15 and is provided on the anti-reflection adjustment layer 34. Furthermore, an adhesive layer can also be provided.
於固體攝像裝置1-3中，於保護層13上遮光膜15被形成圖案，並以嵌入遮光膜15之方式設置抗反射調整層34。 In the solid-state imaging device 1-3, the light shielding film 15 is patterned on the protective layer 13, and the anti-reflection adjustment layer 34 is provided so as to be embedded in the light shielding film 15.
抗反射調整層34為對應於各光電轉換部12r、12g、12b而經薄膜化之階差形狀。抗反射調整層34之對應於各光電轉換部12r、12g、12b之部分之各膜厚為Tr、Tg及Tb，且與第1實施形態同樣地成為Tr>Tg>Tb之關係。 The anti-reflection adjustment layer 34 has a stepped shape which is thinned in accordance with each of the photoelectric conversion portions 12r, 12g, and 12b. The thickness of each of the portions of the anti-reflection adjustment layer 34 corresponding to each of the photoelectric conversion portions 12r, 12g, and 12b is Tr, Tg, and Tb, and is similar to the first embodiment in the relationship of Tr>Tg>Tb.
關於以上所說明之第3實施形態之固體攝像裝置1-3，亦可獲得與第1實施形態相同之效果。即，固體攝像裝置1-3係如下構成：具有對應於特定之光電轉換部12而經薄膜化之階差形狀之抗反射調整層34介隔覆蓋受光面11a之整個面而設置之保護層13，而設置於半導體基板11之受光面11a上。因此，於固體攝像裝置1-3中，於將抗反射調整層34圖案化為階差形狀時，圖案化之損傷不會影響半導體基板11之受光面11a，可防止白點及暗電流之惡化。因此，於包含抗反射調整層34之固體攝像裝置1-3中，可不使白點及暗電流惡化，而根據以彩色濾光片17分光後之入射光之波長謀求各光電轉換部12之感度之最佳化。 The solid-state imaging device 1-3 according to the third embodiment described above can also obtain the same effects as those of the first embodiment. In other words, the solid-state imaging device 1-3 is configured such that the anti-reflection adjustment layer 34 having a stepped shape corresponding to the specific photoelectric conversion portion 12 is provided with a protective layer 13 that covers the entire surface of the light-receiving surface 11a. It is provided on the light receiving surface 11a of the semiconductor substrate 11. Therefore, in the solid-state imaging device 1-3, when the anti-reflection adjustment layer 34 is patterned into a stepped shape, the damage of the pattern does not affect the light-receiving surface 11a of the semiconductor substrate 11, and the deterioration of the white point and the dark current can be prevented. . Therefore, in the solid-state imaging device 1-3 including the anti-reflection adjustment layer 34, the sensitivity of each photoelectric conversion portion 12 can be obtained from the wavelength of the incident light split by the color filter 17 without deteriorating the white point and the dark current. Optimized.
又，於固體攝像裝置1-3中，與第1實施形態同樣地，保護層13具有均勻之膜厚並且覆蓋半導體基板11之受光面11a之整個面。藉此，於保護層13發揮作為對半導體基板11之釘紮層之功能之情形時，可不變動釘紮效應，藉由具有階差形狀之抗反射調整層34調整抗反射條件，而根據以彩色濾光片17分光後之入射光之波長謀求各光電轉換部12之感度之最佳化。 Further, in the solid-state imaging device 1-3, as in the first embodiment, the protective layer 13 has a uniform film thickness and covers the entire surface of the light receiving surface 11a of the semiconductor substrate 11. Thereby, when the protective layer 13 functions as a pinning layer for the semiconductor substrate 11, the anti-reflection condition can be adjusted by the anti-reflection adjustment layer 34 having a stepped shape without changing the pinning effect, and The wavelength of the incident light after the filter 17 is split is optimized for the sensitivity of each photoelectric conversion unit 12.
又，抗反射調整層34藉由具有與彩色濾光片17不同之折射率而發揮作為半導體基板11之受光面11a上之多層抗反射膜之功能。進 而，由於抗反射調整層34具有對應於特定之光電轉換部而經薄膜化之階差形狀，故以彩色濾光片17分光後之各色入射光於各光電轉換部12中之反射率達到最小，可使各光電轉換部12之感度最佳化。 Further, the anti-reflection adjustment layer 34 functions as a multilayer anti-reflection film on the light-receiving surface 11a of the semiconductor substrate 11 by having a refractive index different from that of the color filter 17. Enter On the other hand, since the anti-reflection adjustment layer 34 has a stepped shape which is thinned in accordance with the specific photoelectric conversion portion, the reflectance of the incident light of each color after being separated by the color filter 17 is minimized in each of the photoelectric conversion portions 12. The sensitivity of each photoelectric conversion unit 12 can be optimized.
再者，亦可於本實施形態之固體攝像裝置1-3中組合方才說明之第1實施形態之變化例2(參照圖8)。於此情形時，相對於具有3色之圖案之彩色濾光片17，抗反射調整層34具有對應於特定之光電轉換部12被薄膜化為2級之階差形狀。抗反射調整層34之各部分之膜厚Tr、Tg、Tb係以成為Tr>Tg=Tb、或Tr=Tg>Tb之關係之方式進行調整。 In addition, the second embodiment (see FIG. 8) of the first embodiment will be described in combination with the solid-state imaging device 1-3 of the present embodiment. In this case, the anti-reflection adjustment layer 34 has a stepped shape corresponding to the specific photoelectric conversion portion 12 being thinned into two stages with respect to the color filter 17 having a pattern of three colors. The film thicknesses Tr, Tg, and Tb of the respective portions of the anti-reflection adjustment layer 34 are adjusted so as to have a relationship of Tr>Tg=Tb or Tr=Tg>Tb.
又，亦可於本實施形態之固體攝像裝置1-3中組合方才說明之第2實施形態之變化例1(參照圖12)。於此情形時，抗反射調整層34為設置於遮光膜15之上層及下層之積層構造，且至少上層具有階差形狀。 In addition, the first embodiment (see FIG. 12) of the second embodiment will be described in combination with the solid-state imaging device 1-3 of the present embodiment. In this case, the anti-reflection adjustment layer 34 has a laminated structure provided on the upper layer and the lower layer of the light shielding film 15, and at least the upper layer has a stepped shape.
上述實施形態中所說明之本技術之固體攝像裝置可應用於例如數位相機或視訊攝影機等相機系統、進而具有攝像功能之行動電話或具備攝像功能之其他機器等電子機器。 The solid-state imaging device of the present technology described in the above embodiments can be applied to, for example, a camera system such as a digital camera or a video camera, an electronic device such as a mobile phone having an imaging function, or another device having an imaging function.
圖14表示作為本技術之電子機器之一例之使用有固體攝像裝置的相機之構成圖。本實施形態例之相機係以可拍攝靜態圖像或動態圖像之視訊攝影機為例者。該相機91具有：固體攝像裝置1、將入射光導入至固體攝像裝置1之受光感測器部之光學系統93、快門裝置94、驅動固體攝像裝置1之驅動電路95、及處理固體攝像裝置1之輸出信號之信號處理電路96。 Fig. 14 is a view showing the configuration of a camera using a solid-state imaging device as an example of an electronic apparatus of the present technology. The camera of this embodiment is exemplified by a video camera that can capture still images or moving images. The camera 91 includes a solid-state imaging device 1 , an optical system 93 that introduces incident light into a light receiving sensor unit of the solid-state imaging device 1 , a shutter device 94 , a drive circuit 95 that drives the solid-state imaging device 1 , and a processed solid-state imaging device 1 . The signal processing circuit 96 of the output signal.
固體攝像裝置1應用上述各實施形態中所說明之構成之固體攝像裝置。光學系統(光學透鏡)93係使來自被攝體之像光(入射光)於固體攝像裝置1之攝像面上成像。藉此，於固體攝像裝置1內，一定期間內 蓄積信號電荷。此種光學系統93亦可設為包含複數個光學透鏡之光學透鏡系統。快門裝置94控制對固體攝像裝置1之光照射時間及遮光時間。驅動電路95對固體攝像裝置1及快門裝置94供給驅動信號，並根據供給之驅動信號(時序信號)控制固體攝像裝置1對信號處理電路96之信號輸出動作之控制、及快門裝置94之快門動作。即，驅動電路95係藉由驅動信號(時序信號)之供給而進行自固體攝像裝置1向信號處理電路96之信號傳送動作。信號處理電路96係對自固體攝像裝置1傳送之信號進行各種信號處理。進行了信號處理之影像信號被記憶於記憶體等記憶媒體或被輸出至監視器。 The solid-state imaging device 1 is applied to the solid-state imaging device having the configuration described in each of the above embodiments. The optical system (optical lens) 93 images the image light (incident light) from the subject on the imaging surface of the solid-state imaging device 1. Thereby, in the solid-state imaging device 1, within a certain period of time Accumulate signal charge. Such an optical system 93 can also be an optical lens system comprising a plurality of optical lenses. The shutter device 94 controls the light irradiation time and the light blocking time of the solid-state imaging device 1. The drive circuit 95 supplies a drive signal to the solid-state imaging device 1 and the shutter device 94, and controls the control of the signal output operation of the solid-state imaging device 1 to the signal processing circuit 96 and the shutter operation of the shutter device 94 based on the supplied drive signal (timing signal). . In other words, the drive circuit 95 performs a signal transfer operation from the solid-state imaging device 1 to the signal processing circuit 96 by the supply of a drive signal (timing signal). The signal processing circuit 96 performs various signal processing on the signals transmitted from the solid-state imaging device 1. The video signal subjected to signal processing is memorized in a memory medium such as a memory or output to a monitor.
根據以上所說明之本實施形態之電子機器，藉由使用上述第1實施形態~第3實施形態中所說明之任一受光特性良好之固體攝像裝置，可達成具有攝像功能之電子機器之高清攝像或小型化。 According to the electronic device of the present embodiment described above, it is possible to realize high-definition imaging of an electronic device having an imaging function by using any solid-state imaging device having excellent light receiving characteristics as described in the first to third embodiments. Or miniaturization.
再者，本技術亦可採用如下構成。 Furthermore, the present technology can also adopt the following configuration.
(1) (1)
一種固體攝像裝置，其包含：半導體基板，其具有複數個光電轉換部；保護層，其於上述半導體基板之受光面之正上方，覆蓋該受光面之整個面而設置；遮光膜，其設置於上述保護層上，將上述光電轉換部之間遮光；抗反射調整層，其於上述保護層上設置於上述遮光膜之上層及下層之至少一者，並具有對應於特定之上述光電轉換部而經薄膜化之階差形狀；彩色濾光片，其以對應於上述光電轉換部之配置而設於上述抗反射調整層上置，並具有對應於上述抗反射調整層之膜厚之各色圖案；及 配線層，其設置於上述半導體基板之與受光面相反側。 A solid-state imaging device comprising: a semiconductor substrate having a plurality of photoelectric conversion portions; a protective layer disposed over a light receiving surface of the semiconductor substrate and covering the entire surface of the light receiving surface; and a light shielding film disposed on the light shielding film The protective layer is provided with light shielding between the photoelectric conversion portions, and the antireflection adjustment layer is provided on the protective layer on at least one of an upper layer and a lower layer of the light shielding film, and has a photoelectric conversion portion corresponding to the specific one. a thinned step shape; a color filter disposed on the anti-reflection adjustment layer corresponding to the arrangement of the photoelectric conversion portion, and having a color pattern corresponding to a film thickness of the anti-reflection adjustment layer; and The wiring layer is provided on a side opposite to the light receiving surface of the semiconductor substrate.
(2) (2)
如(1)之固體攝像裝置，其中上述抗反射調整層係於上述保護層上設置於上述遮光膜之下層，並具有以上述遮光膜為掩膜之蝕刻所形成之階差形狀；上述彩色濾光片係嵌入上述遮光膜間而設置於上述抗反射調整層上。 The solid-state imaging device according to (1), wherein the anti-reflection adjustment layer is provided on the protective layer on a lower layer of the light-shielding film, and has a step shape formed by etching using the light-shielding film as a mask; The light sheet is interposed between the light shielding films and provided on the anti-reflection adjustment layer.
(3) (3)
如(2)之固體攝像裝置，其中上述彩色濾光片於上述抗反射調整層上僅設置於上述遮光膜之開口內。 The solid-state imaging device according to (2), wherein the color filter is provided only in the opening of the light shielding film on the anti-reflection adjustment layer.
(4) (4)
如(2)或(3)之固體攝像裝置，其中上述抗反射調整層之上述遮光膜之下部分之膜厚相等。 The solid-state imaging device according to (2) or (3), wherein the film thickness of the lower portion of the light-shielding film of the anti-reflection adjustment layer is equal.
(5) (5)
如(1)之固體攝像裝置，其中上述抗反射調整層於上述保護層上設置於上述遮光膜之上層。 The solid-state imaging device according to (1), wherein the anti-reflection adjustment layer is provided on the protective layer on an upper layer of the light-shielding film.
(6) (6)
如(5)之固體攝像裝置，其中上述抗反射調整層具有以上述遮光膜為掩膜之蝕刻所形成之階差形狀；上述彩色濾光片係嵌入上述遮光膜間而設置於上述抗反射調整層上。 The solid-state imaging device according to (5), wherein the anti-reflection adjustment layer has a stepped shape formed by etching using the light-shielding film as a mask, and the color filter is interposed between the light-shielding films and is provided in the anti-reflection adjustment. On the floor.
(7) (7)
如(1)之固體攝像裝置，其中上述抗反射調整層為於上述保護層上設置於上述遮光膜之上層 及下層之積層構造，且構成該積層構造之至少最上層具有上述階差形狀。 The solid-state imaging device according to (1), wherein the anti-reflection adjustment layer is provided on the protective layer on the upper layer of the light shielding film And a laminated structure of the lower layer, and at least the uppermost layer constituting the laminated structure has the above-described stepped shape.
(8) (8)
如(7)之固體攝像裝置，其中上述最上層具有以上述遮光膜為掩膜之蝕刻所形成之階差形狀；上述彩色濾光片係嵌入上述遮光膜間而設置於上述抗反射調整層上。 The solid-state imaging device according to (7), wherein the uppermost layer has a stepped shape formed by etching using the light shielding film as a mask, and the color filter is interposed between the light shielding films and disposed on the anti-reflection adjustment layer. .
(9) (9)
如(1)至(8)中任一項之固體攝像裝置，其中上述保護層具有均勻之膜厚。 The solid-state imaging device according to any one of (1) to (8) wherein the protective layer has a uniform film thickness.
(10) (10)
如(1)至(9)中任一項之固體攝像裝置，其中上述抗反射調整層之折射率較上述彩色濾光片之折射率小。 The solid-state imaging device according to any one of (1) to (9), wherein the anti-reflection adjustment layer has a refractive index smaller than a refractive index of the color filter.
(11) (11)
如(1)至(10)中任一項之固體攝像裝置，其中上述抗反射調整層係入射至對應之上述光電轉換部之光之波長越大，則對應於該光電轉換部之部分之膜厚越大。 The solid-state imaging device according to any one of (1) to (10), wherein the anti-reflection adjustment layer is a film that corresponds to a portion of the photoelectric conversion portion when the wavelength of light incident on the corresponding photoelectric conversion portion is larger The thicker the bigger.
(12) (12)
如(1)至(11)中任一項之固體攝像裝置，其中上述彩色濾光片具有經平坦化之表面。 The solid-state imaging device according to any one of (1) to (11), wherein the color filter has a planarized surface.
(13) (13)
一種固體攝像裝置之製造方法，其包括：於具有複數個光電轉換部之半導體基板之受光面之正上方，形成覆蓋該受光面之整個面之保護層；於上述保護層上形成將上述光電轉換部之間遮光之遮光膜； 於上述保護層上，在上述遮光膜之上層及下層之至少一者成膜抗反射調整層；將上述抗反射調整層圖案化為對應於特定之上述光電轉換部而經薄膜化之階差形狀；於上述抗反射調整層上以對應於上述光電轉換部之配置，形成具有對應於上述抗反射調整層之膜厚之各色圖案之彩色濾光片；及於上述半導體基板之與受光面相反側形成配線層。 A method of manufacturing a solid-state imaging device, comprising: forming a protective layer covering an entire surface of the light-receiving surface directly above a light-receiving surface of a semiconductor substrate having a plurality of photoelectric conversion portions; forming the photoelectric conversion on the protective layer a light-shielding film between the parts; In the protective layer, at least one of an upper layer and a lower layer of the light shielding film is formed with an antireflection adjustment layer; and the antireflection adjustment layer is patterned into a stepped shape corresponding to the specific photoelectric conversion portion. Forming a color filter having a color pattern corresponding to a film thickness of the anti-reflection adjustment layer on the anti-reflection adjustment layer corresponding to the arrangement of the photoelectric conversion portion; and on a side opposite to the light-receiving surface of the semiconductor substrate A wiring layer is formed.
(14) (14)
如(13)之固體攝像裝置之製造方法，其中成膜上述抗反射調整層時，於上述保護層上在上述遮光膜之下層成膜該抗反射調整層；形成上述遮光膜時，於經成膜於上述保護層上之上述抗反射調整層上形成該遮光膜；將上述抗反射調整層圖案化時，進行以上述遮光膜為掩膜之圖案化；形成上述彩色濾光片時，於上述抗反射調整層上嵌入上述遮光膜之間而形成該彩色濾光片。 The method of manufacturing a solid-state imaging device according to (13), wherein, when the anti-reflection adjustment layer is formed, the anti-reflection adjustment layer is formed on the protective layer under the light-shielding film; and when the light-shielding film is formed, The film is formed on the anti-reflection adjustment layer on the protective layer; when the anti-reflection adjustment layer is patterned, patterning is performed by using the light-shielding film as a mask; and when the color filter is formed, The color filter is formed by being embedded between the light-shielding films on the anti-reflection adjustment layer.
(15) (15)
如(14)之固體攝像裝置之製造方法，其中形成上述彩色濾光片時，以上述遮光膜為掩膜而圖案形成上述各色圖案，並於上述抗反射調整層上僅於該遮光膜之開口內形成該彩色濾光片。 In the method of manufacturing a solid-state imaging device according to (14), wherein the color filter is formed, the color pattern is patterned by using the light shielding film as a mask, and only the opening of the light shielding film is formed on the anti-reflection adjustment layer. The color filter is formed inside.
(16) (16)
如(13)之固體攝像裝置之製造方法，其中成膜上述抗反射調整層時，在形成上述遮光膜後，於上述保護層上在上述遮光膜之上層成膜該抗反射調整層。 In the method of manufacturing a solid-state imaging device according to (13), in forming the anti-reflection adjustment layer, after the light-shielding film is formed, the anti-reflection adjustment layer is formed on the protective layer on the light-shielding film.
(17) (17)
如(16)之固體攝像裝置之製造方法，其中將上述抗反射調整層圖案化時，進行使用抗蝕劑圖案並且以上述遮光膜為掩膜之圖案化；形成上述彩色濾光片時，於上述抗反射調整層上嵌入上述遮光膜間而形成該彩色濾光片。 In the method of manufacturing a solid-state imaging device according to (16), wherein the anti-reflection adjustment layer is patterned, a resist pattern is used and the light-shielding film is used as a mask; and when the color filter is formed, The color filter is formed by being embedded in the anti-reflection adjustment layer between the light-shielding films.
(18) (18)
一種電子機器，其包含：半導體基板，其具有複數個光電轉換部；保護層，其於上述半導體基板之受光面之正上方，覆蓋該受光面之整個面而設置；遮光膜，其設置於上述保護層上，將上述光電轉換部之間遮光；抗反射調整層，其於上述保護層上設置於上述遮光膜之上層及下層之至少一者，並具有對應於特定之上述光電轉換部而經薄膜化之階差形狀；彩色濾光片，其於上述抗反射調整層上以對應於上述光電轉換部之配置設置，並具有對應於上述抗反射調整層之膜厚之各色圖案；配線層，其設置於上述半導體基板之與受光面相反側；及光學系統，其將入射光導入至上述光電轉換部。 An electronic device comprising: a semiconductor substrate having a plurality of photoelectric conversion portions; a protective layer disposed over a light receiving surface of the semiconductor substrate and covering the entire surface of the light receiving surface; a light shielding film disposed on the above In the protective layer, the photoelectric conversion portions are shielded from light; and the anti-reflection adjustment layer is provided on the protective layer on at least one of the upper layer and the lower layer of the light shielding film, and has a corresponding photoelectric conversion portion corresponding thereto. a thinned step shape; a color filter disposed on the anti-reflection adjustment layer corresponding to the photoelectric conversion portion, and having a color pattern corresponding to a film thickness of the anti-reflection adjustment layer; a wiring layer, The semiconductor substrate is disposed on a side opposite to the light receiving surface of the semiconductor substrate, and an optical system that introduces incident light into the photoelectric conversion portion.
1-1‧‧‧固體攝像裝置 1-1‧‧‧Solid camera
11‧‧‧半導體基板 11‧‧‧Semiconductor substrate
11a‧‧‧受光面 11a‧‧‧Glossy surface
12、12b、12g、12r‧‧‧光電轉換部 12, 12b, 12g, 12r‧‧‧ photoelectric conversion department
13‧‧‧保護層 13‧‧‧Protective layer
14‧‧‧抗反射調整層 14‧‧‧Anti-reflection adjustment layer
14b、14g‧‧‧凹部 14b, 14g‧‧‧ recess
15‧‧‧遮光膜 15‧‧‧Shade film
16‧‧‧密接層 16‧‧ ‧ close layer
17‧‧‧彩色濾光片 17‧‧‧Color filters
17b、17g、17r‧‧‧圖案 17b, 17g, 17r‧‧‧ patterns
18‧‧‧晶載透鏡 18‧‧‧Crystal lens
19‧‧‧配線層 19‧‧‧Wiring layer
Tr、Tg、Tb‧‧‧膜厚 Tr, Tg, Tb‧‧‧ film thickness
Claims (18)
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| US10636826B2 (en) * | 2015-10-26 | 2020-04-28 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, manufacturing method thereof, and electronic device |
| WO2020070887A1 (en) * | 2018-10-05 | 2020-04-09 | オリンパス株式会社 | Solid-state imaging device |
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