TW201415583A - Wafer laminated body and method for bonding and debonding between device wafer and carrier wafer - Google Patents
Wafer laminated body and method for bonding and debonding between device wafer and carrier wafer Download PDFInfo
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- TW201415583A TW201415583A TW102136063A TW102136063A TW201415583A TW 201415583 A TW201415583 A TW 201415583A TW 102136063 A TW102136063 A TW 102136063A TW 102136063 A TW102136063 A TW 102136063A TW 201415583 A TW201415583 A TW 201415583A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明是關於一種包含接合於如承載晶圓等支撐體上之元件晶圓的疊層體、該承載晶圓和元件晶圓的黏合及剝離方法。 The present invention relates to a laminate comprising a component wafer bonded to a support such as a carrier wafer, and a method of bonding and peeling the carrier wafer and the component wafer.
近年來，隨著電子設備的小型化及薄型化，形成於印刷電路基板的電路正趨於高密度化，且相鄰的電極之間的間隔和電極的寬度變得非常窄。由此，對於半導體封裝件的薄型化和小型化的要求也正在提高。由於這種要求，作為半導體晶圓的封裝方式，利用倒裝晶圓連接方式取代了利用金屬線的習知的金屬線黏合方式，該倒裝晶圓連接方式是指，在晶圓的電極上形成被稱為凸塊(bump)的突起電極，來藉由凸塊直接連接基板電極和晶圓電極，這種方式正受到關注。最近，作為進一步高功能化並能夠實現高速工作的技術，作為以最短距離連接晶圓之間的三維安裝技術的矽貫通電極(TSV：Through Silicon Via)技術正受到關注。這種矽貫通電極(TSV)技術正逐漸成為實現更高密度、大容量化所必要的技術。 In recent years, with the miniaturization and thinning of electronic devices, circuits formed on printed circuit boards are becoming denser, and the interval between adjacent electrodes and the width of electrodes are extremely narrow. As a result, the demand for thinning and miniaturization of the semiconductor package is also increasing. Due to this requirement, as a semiconductor wafer packaging method, a conventional wafer bonding method using a metal wire is replaced by a flip chip connection method, which is referred to as an electrode on a wafer. Forming a bump electrode called a bump to directly connect the substrate electrode and the wafer electrode by the bump is attracting attention. Recently, as a technology that is further highly functional and capable of high-speed operation, a TSV (Through Silicon Via) technology that is a three-dimensional mounting technique for connecting wafers at the shortest distance is attracting attention. Such a through-electrode (TSV) technology is gradually becoming a technology necessary for achieving higher density and larger capacity.
半導體晶圓的厚度要求盡可能薄且機械性強度並不下降。並且，隨著半導體裝置的進而薄型化的要求，正執行研削晶圓的背面的所謂背磨削，以使半導體晶圓更薄，而且半導體裝置的製備程序逐漸變得複雜。因此，作為適合簡化半導體製備程序的方法，需提出兼備在進行背磨削時維持半導體晶圓的功能和底部填充功能的樹脂。 The thickness of the semiconductor wafer is required to be as thin as possible and the mechanical strength does not decrease. Further, with the demand for further thinning of the semiconductor device, so-called back grinding of the back surface of the wafer is being performed to make the semiconductor wafer thinner, and the preparation procedure of the semiconductor device is gradually complicated. Therefore, as a method suitable for simplifying the semiconductor preparation process, it is necessary to provide a resin which has both the function of maintaining the semiconductor wafer and the underfill function during back grinding.
為實現這種目標，需要執行對形成有半導體電路的基板的非電路形成面(又稱為“背面”)進行研削，並在背面形成包含矽貫通電極的電極的程序。在矽基板的背面研削程序中，在研削面的相反側黏貼保護 膠帶，來防止研削時的晶圓的破損。但是，這膠帶將有機樹脂膜作為基材來使用，而有機樹脂膜基材雖具有柔軟性，但強度或耐熱性不充分，因而不適合執行在背面形成配線層的程序。因此，提出藉由黏合材料在矽、玻璃等的支撐體接合半導體基板，從而能夠充分承受背面研削、背面電極形成程序的方案。 In order to achieve such a goal, it is necessary to perform a process of grinding a non-circuit forming surface (also referred to as a "back surface") of a substrate on which a semiconductor circuit is formed, and forming an electrode including a through-electrode on the back surface. Adhesive protection on the opposite side of the grinding surface in the back grinding process of the 矽 substrate Tape to prevent damage to the wafer during grinding. However, this tape uses an organic resin film as a base material, and the organic resin film base material has flexibility, but strength or heat resistance is insufficient, and thus it is not suitable to perform a process of forming a wiring layer on the back surface. Therefore, it has been proposed to bond the semiconductor substrate to a support such as tantalum or glass by the adhesive material, and it is possible to sufficiently withstand the back grinding and the back electrode forming process.
在這裡，重要的問題是在支撐體接合基板時的黏合劑以及黏合方法。尤其，黏合劑需要能夠無縫隙地將基板接合於支撐體，需要具有能夠承受之後的程序的充分的耐久性，並且最後應能夠方便地從支撐體剝離薄型晶圓。由於晶圓和支撐體最後被剝離，因而黏合劑又被稱為臨時黏合劑。 Here, an important problem is an adhesive and a bonding method when the support body is bonded to the substrate. In particular, the adhesive needs to be able to bond the substrate to the support without gaps, and it is necessary to have sufficient durability to withstand the subsequent processes, and finally it is possible to easily peel off the thin wafer from the support. Since the wafer and the support are finally stripped, the adhesive is also referred to as a temporary adhesive.
作為習知的剝離方法，局限於如下技術等，即，使用包含光吸收性物質的黏合劑，向此照射高強度的光來分解黏合劑層，從而從支撐體剝離黏合劑層的技術，以及將熱熔融性的碳氫化合物類化合物用於黏合劑，在加熱熔融的狀態下執行接合/剝離的技術。 The conventional peeling method is limited to a technique in which a binder containing a light absorbing material is used to irradiate high-strength light to decompose the adhesive layer, thereby peeling off the adhesive layer from the support, and A technique in which a hot-melt hydrocarbon compound is used for a binder and bonding/peeling is performed in a state of being heated and melted.
前一技術具有每一張基板的處理時間變長等的問題。並且，後一技術雖然由於僅藉由加熱來進行控制，因而簡便，但另一方面，由於在超過200℃的高溫下熱穩定性不充分，因而適用範圍很窄。並且，雖然提出了將矽黏結劑用於臨時黏合劑層的技術，但是這由於使用附加固化型的矽黏結劑來將基板接合於支撐體，在剝離時浸漬於溶解或分解矽酮樹脂的藥劑來從支撐體分離基板，因而剝離所需時間非常長，並具有在實際製備程序中很難適用的問題。 The former technique has a problem that the processing time per substrate becomes long. Further, although the latter technique is simple because it is controlled by heating, on the other hand, since the thermal stability is insufficient at a high temperature exceeding 200 ° C, the application range is narrow. Further, although a technique of using a tantalum binder for the temporary adhesive layer has been proposed, this is because the substrate is bonded to the support by using an additional curing type tantalum binder, and is immersed in the agent for dissolving or decomposing the anthrone resin at the time of peeling. In order to separate the substrate from the support, the time required for peeling is very long and has a problem that it is difficult to apply in an actual preparation procedure.
本發明的目的在於提供一種臨時黏合承載晶圓和元件晶圓以能夠執行半導體程序，並能夠節約程序時間來無元件晶圓的損傷地分離元件晶圓和承載晶圓的疊層體以及黏合/剝離方法。 It is an object of the present invention to provide a temporary bonding of a carrier wafer and a component wafer to enable execution of a semiconductor program, and to save program time to separate the component wafer and the wafer-bearing laminate and bond/without damage to the component wafer. Stripping method.
為了達成上述目的的本發明之實施例的疊層體，其包括：一元件晶圓；一保護層，其形成於該元件晶圓的一面；一承載晶圓，其用於支撐該元件晶圓；一填充層，其形成於該承載晶圓的一面；以及一光分解 層，其形成於該填充層上的一部分，與該保護層相接觸，來使該元件晶圓與該承載晶圓臨時接合。 A laminate according to an embodiment of the present invention for achieving the above object, comprising: a component wafer; a protective layer formed on one side of the component wafer; and a carrier wafer for supporting the component wafer a filling layer formed on one side of the carrier wafer; and a photolysis a layer formed on a portion of the fill layer in contact with the protective layer to temporarily bond the component wafer to the carrier wafer.
與此同時，為了達成上述目的的本發明之一實施例的疊層體之黏合及剝離處理方法，其包括：步驟(a)，在一元件晶圓的一面形成一保護層；步驟(b)，在一承載晶圓的一面形成一填充層；步驟(c)，在該填充層上的一部分形成一光分解層；步驟(d)，接合該保護層和該光分解層，來使該元件晶圓和該承載晶圓臨時接合；以及步驟(e)，向該光分解層照射雷射，來使該元件晶圓和該承載晶圓分離。 Meanwhile, a method of bonding and peeling a laminate according to an embodiment of the present invention for achieving the above object, comprising: step (a), forming a protective layer on one side of a component wafer; and step (b) Forming a filling layer on one side of the carrier wafer; step (c), forming a photo-decomposing layer on a portion of the filling layer; and step (d), bonding the protective layer and the photo-decomposing layer to make the element The wafer and the carrier wafer are temporarily bonded; and in step (e), the photo-decomposition layer is irradiated with a laser to separate the component wafer from the carrier wafer.
本發明的疊層體具有元件晶圓和承載晶圓之間的保護層、填充層以及由形成於該填充層上的一部分形成之光分解層形成的黏結劑層，因而具有能夠無該元件晶圓的損傷地進行黏合及剝離處理之優異的效果。 The laminate of the present invention has a protective layer between the element wafer and the carrier wafer, a filling layer, and a binder layer formed of a photo-decomposable layer formed on a portion of the filling layer, thereby having the element crystal Excellent results of bonding and peeling treatment in a round damage.
根據本發明的疊層體之黏合及剝離處理方法，向在該填充層上的一部分(較佳地，在該填充層上的邊緣部分)形成之光分解層照射雷射來執行剝離處理，因而具有在縮短程序時間的同時又能夠無元件晶圓的損傷地分離元件晶圓和承載晶圓之優異的效果。 According to the bonding and peeling treatment method of the laminate of the present invention, the photodecomposition layer formed on a part of the filling layer (preferably, the edge portion on the filling layer) is irradiated with a laser to perform a peeling treatment, and thus It has an excellent effect of separating the component wafer and the carrier wafer without damage to the component wafer while shortening the program time.
10‧‧‧元件晶圓 10‧‧‧Component Wafer
20‧‧‧保護層 20‧‧‧Protective layer
30‧‧‧承載晶圓 30‧‧‧Loading wafer
40‧‧‧填充層 40‧‧‧Filling layer
50‧‧‧光分解層 50‧‧‧Light decomposition layer
100、101‧‧‧疊層體 100, 101‧‧‧ laminate
200‧‧‧支撐體 200‧‧‧Support
S110、S120、S121、S200、S300‧‧‧步驟 S110, S120, S121, S200, S300‧‧‧ steps
第1圖繪示本發明的一實施例之疊層體的剖視圖。 Fig. 1 is a cross-sectional view showing a laminate of an embodiment of the present invention.
第2圖繪示本發明的另一實施例之疊層體的剖視圖。 Fig. 2 is a cross-sectional view showing a laminate of another embodiment of the present invention.
第3圖繪示形成有填充層及光分解層之承載晶圓的立體圖。 FIG. 3 is a perspective view showing a carrier wafer on which a filling layer and a photo-decomposing layer are formed.
第4圖繪示形成有填充層及光分解層之承載晶圓的俯視圖。 FIG. 4 is a plan view showing a carrier wafer on which a filling layer and a photo-decomposing layer are formed.
第5圖繪示本發明的疊層體之黏合及剝離處理方法的流程圖。 Fig. 5 is a flow chart showing the method of bonding and peeling the laminate of the present invention.
以下參照附圖詳細說明的實施例將會使得本發明的優點和特徵以及實現這些優點和特徵的方法更加明確。但是，本發明不局限於以下所公開的實施例，本發明能夠以互不相同的各種方式實施，本實施例只用於使本發明的公開內容更加完整，有助於本發明所屬技術領域的普通技 術人員能夠完整地理解本發明之範疇，本發明是根據申請專利範圍而定義。在說明書全文中，相同的附圖標記表示相同的結構元件。 The embodiments described in detail below with reference to the drawings will make the advantages and features of the invention, and the methods of the inventions. However, the present invention is not limited to the embodiments disclosed below, and the present invention can be implemented in various ways that are different from each other. This embodiment is only used to make the disclosure of the present invention more complete and contribute to the technical field of the present invention. General skill The scope of the invention can be fully understood by the skilled person, and the invention is defined in accordance with the scope of the patent application. Throughout the specification, the same reference numerals denote the same structural elements.
疊層體Laminate
以下，參照附圖對本發明的疊層體進行詳細說明。 Hereinafter, the laminate of the present invention will be described in detail with reference to the drawings.
第1圖為表示本發明的一實施例之疊層體的剖視圖。參照第1圖，本發明的疊層體100，其包括：一元件晶圓10；一保護層20，其形成於該元件晶圓10的一面；一承載晶圓30，其用於支撐該元件晶圓10；一填充層40，其形成於該承載晶圓30的一面；以及一光分解層50，其形成於該填充層40上的一部分，與該保護層20相接觸，來使該元件晶圓10與該承載晶圓20臨時接合。 Fig. 1 is a cross-sectional view showing a laminate of an embodiment of the present invention. Referring to FIG. 1, a laminate 100 of the present invention includes: a component wafer 10; a protective layer 20 formed on one side of the component wafer 10; and a carrier wafer 30 for supporting the component a wafer 10; a filling layer 40 formed on one side of the carrier wafer 30; and a photo-decomposing layer 50 formed on a portion of the filling layer 40 in contact with the protective layer 20 to make the component The wafer 10 is temporarily bonded to the carrier wafer 20.
並且，如第2圖所示，本發明的另一實施例之疊層體101，其包括：一元件晶圓10；一承載晶圓30，其用於支撐該元件晶圓10；一保護層20，其形成於該承載晶圓30的一面；一填充層40，其形成於該元件晶圓10的一面；以及一光分解層50，其形成於該填充層40上的一部分，與該保護層20相接觸，來使該元件晶圓10與該承載晶圓30臨時接合。 Moreover, as shown in FIG. 2, the laminate 101 of another embodiment of the present invention includes: a component wafer 10; a carrier wafer 30 for supporting the component wafer 10; a protective layer 20, which is formed on one side of the carrier wafer 30; a filling layer 40 formed on one side of the component wafer 10; and a photo-decomposing layer 50 formed on a portion of the filling layer 40, and the protection The layers 20 are in contact to temporarily engage the component wafer 10 with the carrier wafer 30.
以下，對本發明之疊層體100、101所包括的各多個結構進行詳細說明。 Hereinafter, each of the plurality of structures included in the laminates 100 and 101 of the present invention will be described in detail.
元件晶圓10 Component wafer 10
首先，元件晶圓10作為普通的晶圓，可包含矽、鎵等半導體晶圓、水晶晶圓、藍寶石以及玻璃等。 First, the component wafer 10 is a common wafer and may include a semiconductor wafer such as germanium or gallium, a crystal wafer, sapphire, and glass.
保護層20 Protective layer 20
之後，對在該元件晶圓10的表面形成之保護層20進行說明。該保護層20發揮對在元件晶圓10的電路面形成之圖案進行保護的作用。並且，在經過該元件晶圓10的研削及背面程序後分離由黏合劑等結合的元件晶圓10和承載晶圓20時，該保護層20發揮能夠使該元件晶圓10和該承載晶圓20順暢地分離的作用。 Next, the protective layer 20 formed on the surface of the element wafer 10 will be described. The protective layer 20 functions to protect a pattern formed on the circuit surface of the element wafer 10. Further, when the component wafer 10 and the carrier wafer 20 bonded by the adhesive or the like are separated after the grinding and the back surface of the component wafer 10, the protective layer 20 functions to enable the component wafer 10 and the carrier wafer. 20 smooth separation effect.
藉由在元件晶圓10的電路面形成的圖案上塗敷包含固化型矽酮樹脂的組合物，來形成該保護層20。同時，如第2圖所示的實施方式，該保護層20也可形成於承載晶圓30的一面，而不是元件晶圓10的一面。 The protective layer 20 is formed by applying a composition containing a curable fluorenone resin to a pattern formed on the circuit surface of the element wafer 10. Meanwhile, as in the embodiment shown in FIG. 2, the protective layer 20 may be formed on one side of the carrier wafer 30 instead of one side of the component wafer 10.
在這裡，固化型矽酮樹脂可使用包含溶劑添加型樹脂、溶劑縮合型樹脂、溶劑紫外線-固化型樹脂、無溶劑添加型樹脂、無溶劑縮合型樹脂、無溶劑紫外線固化型樹脂以及無溶劑電子線固化型樹脂中的至少一種固化反應型樹脂。 Here, the curable fluorenone resin may be a solvent-added resin, a solvent condensed resin, a solvent ultraviolet-curable resin, a solventless additive resin, a solventless condensation resin, a solventless ultraviolet curable resin, and a solventless electron. At least one of the line-curable resins is a curing reaction type resin.
該保護層20中除了包含固化型矽酮樹脂之外還可包含固化劑。固化劑的含量較佳為保護層20的總組成中的0.5~5.0重量百分比(%)，更佳為1.0~3.0重量%。在固化劑的含量小於0.5重量%的情況下，有可能導致因未固化而在元件晶圓10的電路面之圖案上產生矽轉印的問題，在固化劑的含量超過5.0重量%的情況下，由於難以控制固化速度，因而有可能保護層20組成液的適用期被縮短。 The protective layer 20 may further contain a curing agent in addition to the curable fluorenone resin. The content of the curing agent is preferably from 0.5 to 5.0% by weight (%) based on the total composition of the protective layer 20, more preferably from 1.0 to 3.0% by weight. In the case where the content of the curing agent is less than 0.5% by weight, there is a possibility that the problem of the transfer of the ruthenium on the pattern of the circuit surface of the element wafer 10 due to uncured is caused, and in the case where the content of the curing agent exceeds 5.0% by weight. Since it is difficult to control the curing speed, it is possible that the pot life of the protective layer 20 constituent liquid is shortened.
該保護層20的組成中可包含溶劑，作為該溶劑，可使用水類或有機類溶劑，但本發明並不受特殊限制。 The composition of the protective layer 20 may contain a solvent, and as the solvent, an aqueous or organic solvent may be used, but the present invention is not particularly limited.
承載晶圓30 Carrying wafer 30
在本發明中，承載晶圓30發揮支撐該元件晶圓10，並防止元件晶圓在研削以及移送過程中遭到破壞的作用。 In the present invention, the carrier wafer 30 functions to support the component wafer 10 and prevent the component wafer from being damaged during grinding and transfer.
尤其，較佳地，本發明的承載晶圓30由能夠使在本發明使用的雷射等光能透射的材料形成。作為範例，可使用玻璃材料或透明丙烯酸類材料等。 In particular, preferably, the carrier wafer 30 of the present invention is formed of a material capable of transmitting light energy such as a laser used in the present invention. As an example, a glass material, a transparent acrylic material, or the like can be used.
填充層40 Fill layer 40
本發明的填充層40形成於該承載晶圓30的一面。該填充層40位於元件晶圓10和承載晶圓30之間，發揮吸收在元件晶圓10的研削加工時產生的負荷應力，並填補在元件晶圓10上的電路圖案面形成的凹凸部分的作用。同時，如第2圖所示的實施方式，該填充層10也可形成於元件晶圓10的一面，而不是承載晶圓30的一面。 The filling layer 40 of the present invention is formed on one side of the carrier wafer 30. The filling layer 40 is located between the element wafer 10 and the carrier wafer 30, and absorbs the load stress generated during the grinding process of the element wafer 10, and fills the uneven portion formed on the circuit pattern surface of the element wafer 10. effect. Meanwhile, as in the embodiment shown in FIG. 2, the filling layer 10 may be formed on one side of the element wafer 10 instead of the side on which the wafer 30 is carried.
可藉由使用光固化型樹脂或熱固化型樹脂來形成填充層40。更佳地，可使用光固化型樹脂。較佳地，例如，光固化型樹脂選擇自主成分為光聚合性氨基甲酸乙酯丙烯酸酯低聚物的樹脂組合物中。 The filling layer 40 can be formed by using a photocurable resin or a thermosetting resin. More preferably, a photocurable resin can be used. Preferably, for example, the photocurable resin is selected from a resin composition in which the self-assembling component is a photopolymerizable urethane acrylate oligomer.
可用於填充層40的氨基甲酸乙酯丙烯酸酯低聚物(urethane acrylate oligomer)可由聚酯型或聚醚型多羥基化合物和聚異氰酸酯化合物 等進行反應而得到的末端異氰酸酯氨基甲酸乙酯類聚合物與包含羥基的丙烯酸酯或甲基丙烯酸甲酯進行反應而得。這種氨基甲酸乙酯丙烯酸酯低聚物在分子內具有光聚合性雙鍵，藉由光照射聚合並固化。氨基甲酸乙酯丙烯酸酯低聚物經聚合及固化形成於如承載晶圓30等的支撐體上，由此可形成該填充層40。 The urethane acrylate oligomer which can be used for the filling layer 40 can be a polyester type or a polyether type polyhydroxy compound and a polyisocyanate compound. The terminal isocyanate urethane-based polymer obtained by the reaction is reacted with a hydroxy group-containing acrylate or methyl methacrylate. Such a urethane acrylate oligomer has a photopolymerizable double bond in a molecule, and is polymerized and cured by light irradiation. The urethane acrylate oligomer is formed by polymerization and solidification on a support such as a carrier wafer 30, whereby the filling layer 40 can be formed.
較佳地，在本發明中使用的氨基甲酸乙酯丙烯酸酯低聚物的分子量具有1000至50000的範圍，更佳地，可具有2000至30000的範圍。這些氨基甲酸乙酯丙烯酸酯低聚物可單獨或組合兩種以上來使用。 Preferably, the urethane acrylate oligomer used in the present invention has a molecular weight of from 1,000 to 50,000, and more preferably from 2,000 to 30,000. These urethane acrylate oligomers can be used individually or in combination of 2 or more types.
僅利用該氨基甲酸乙酯丙烯酸酯低聚物有可能難以得到適當的填充層。因此，較佳地，用光聚合性單體稀釋氨基甲酸乙酯丙烯酸酯低聚物並塗敷後進行固化來形成填充層40。光聚合性單體在分子內具有光聚合性雙鍵，例如可使用由脂環族化合物、芳香族化合物、雜環化合物、多官能丙烯酸酯形成的單體。 It is possible to obtain a suitable filling layer by using only the urethane acrylate oligomer. Therefore, it is preferred to form the packed layer 40 by diluting the urethane acrylate oligomer with a photopolymerizable monomer and applying it to cure. The photopolymerizable monomer has a photopolymerizable double bond in the molecule, and for example, a monomer composed of an alicyclic compound, an aromatic compound, a heterocyclic compound, or a polyfunctional acrylate can be used.
在本發明中，在由光固化型樹脂形成該填充層40的情況下，光聚合所需時間和光照射量可藉由向樹脂混合光聚合引發劑來決定。 In the present invention, in the case where the filling layer 40 is formed of a photocurable resin, the time required for photopolymerization and the amount of light irradiation can be determined by mixing a photopolymerization initiator with a resin.
該光聚合引發劑可使用包含安息香化合物、苯乙酮化合物、醯基膦氧化物化合物、二茂鈦化合物、硫辛酸化合物或過氧化物化合物等光引發劑或者包含胺或醌等光增感劑的物質。具體地，可使用1-羥基環己基苯基甲酮、安息香、安息香甲醚、安息香***、安息香異丙醚、苄基二苯基硫醚、二硫化四甲基秋蘭姆、偶氮二異丁腈、二苄基、二乙醯、以及β-氯蒽醌中的至少一種物質。 The photopolymerization initiator may be a photoinitiator containing a benzoin compound, an acetophenone compound, a mercaptophosphine oxide compound, a titanocene compound, a lipoic acid compound or a peroxide compound, or a photo sensitizer such as an amine or an anthracene. Substance. Specifically, 1-hydroxycyclohexyl phenyl ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl diphenyl sulfide, tetramethylthiuram disulfide, azo diisophoric acid can be used. At least one of butyronitrile, dibenzyl, diethyl hydrazine, and β-chloropurine.
相對於形成該填充層之樹脂的總量100重量%，可使用0.05至15重量%的該光聚合引發劑，較佳地可使用0.1至10重量%，更佳地可使用0.5至5重量%。在使用小於0.05重量%的該光聚合引發劑的情況下，由於未固化而有可能難以進行程序，在超過15重量%來使用的情況下，由於完成光固化的填充層的分子量分佈度變寬而具有填充層的耐熱性、耐化學性等變脆弱的問題。 The photopolymerization initiator may be used in an amount of from 0.05 to 15% by weight, preferably from 0.1 to 10% by weight, more preferably from 0.5 to 5% by weight, based on 100% by weight of the total amount of the resin forming the filling layer. . In the case where less than 0.05% by weight of the photopolymerization initiator is used, it may be difficult to carry out the procedure due to uncured, and in the case of use exceeding 15% by weight, the molecular weight distribution of the packed layer which completes photocuring is broadened. On the other hand, there is a problem that the heat resistance and chemical resistance of the packed layer become weak.
該填充層40可由低聚物以及單體以多種組合排列而成，可與添加劑進行混合而成，該添加劑為碳酸鈣、二氧化矽及雲母等無機填充 劑，鐵、鉛等金屬填充劑以及顏料及染料等著色劑等。 The filling layer 40 may be formed by arranging oligomers and monomers in various combinations, and may be mixed with additives, such as inorganic fillers such as calcium carbonate, cerium oxide and mica. Metal fillers such as iron and lead, and colorants such as pigments and dyes.
光分解層50 Light decomposition layer 50
在本發明中，光分解層50形成於該填充層40上的一部分。該光分解層50發揮使元件晶圓10和承載晶圓30臨時接合的功能。該光分解層50為使元件晶圓10和承載晶圓30臨時接合的結構。因此，在元件晶圓10和承載晶圓30分離時，應減少光分解層的黏合力。應對光分解層50執行光照射處理等，以減少該光分解層50的黏合力，如果在承載晶圓30的整個上表面形成有光分解層50，則需要向很廣的面積的光分解層50進行光照射程序，因而具有程序時間變長、費用高的缺點。因此，本發明的光分解層50形成於在承載晶圓30的一面形成的填充層40上的一部分。 In the present invention, the photo-decomposition layer 50 is formed on a portion of the filling layer 40. The photo-decomposition layer 50 functions to temporarily bond the element wafer 10 and the carrier wafer 30. The photo-decomposition layer 50 is a structure for temporarily bonding the element wafer 10 and the carrier wafer 30. Therefore, when the component wafer 10 and the carrier wafer 30 are separated, the adhesion of the photo-decomposing layer should be reduced. The light-dissolving layer 50 should be subjected to light irradiation treatment or the like to reduce the adhesion of the light-decomposing layer 50. If the light-decomposing layer 50 is formed on the entire upper surface of the carrier wafer 30, a light-decomposing layer having a wide area is required. Since the light irradiation program is performed at 50, the program has a long time and a high cost. Therefore, the photo-decomposition layer 50 of the present invention is formed on a portion of the filling layer 40 formed on one side of the carrier wafer 30.
尤其，較佳地，本發明的該光分解層50形成於該填充層40上的邊緣部分。 In particular, preferably, the photo-decomposition layer 50 of the present invention is formed on an edge portion of the filling layer 40.
第2及3圖為表示由形成有填充層40及光分解層50的承載晶圓30構成的支撐體200的圖。參照這些圖，本發明的光分解層以圓形形成於作為該填充層40上的一部分的邊緣部分，換句話講，本發明的光分解層包圍元件晶圓10的最週邊部分。在這裡，較佳地，該光分解層50能夠以5mm以下的寬度形成，尤其，以3mm以下的寬度形成在該填充層40上的邊緣部分。這是由於在元件晶圓10的週邊的3mm範圍內沒有圖案等的結構，如果超過3mm，則有可能對形成於元件晶圓表面的圖案造成影響。 FIGS. 2 and 3 are views showing the support 200 including the carrier wafer 30 on which the filling layer 40 and the photo-decomposition layer 50 are formed. Referring to these figures, the photo-decomposing layer of the present invention is formed in a circular shape on an edge portion as a part of the filling layer 40. In other words, the photo-decomposing layer of the present invention surrounds the most peripheral portion of the element wafer 10. Here, preferably, the photo-decomposition layer 50 can be formed with a width of 5 mm or less, in particular, an edge portion formed on the filling layer 40 with a width of 3 mm or less. This is because there is no pattern or the like in the range of 3 mm around the periphery of the element wafer 10. If it exceeds 3 mm, the pattern formed on the surface of the element wafer may be affected.
本發明的光分解層50為實現將光能轉化為熱能的功能的部分，可由包含作為將光轉換為熱的物質的吸光劑、分散光的溶劑以及用於塗敷的黏結劑樹脂的樹脂組合物來形成。 The photo-decomposable layer 50 of the present invention is a part that realizes a function of converting light energy into thermal energy, and can be composed of a resin composition including a light absorbing agent as a substance that converts light into heat, a solvent that disperses light, and a binder resin for coating. Things are formed.
在包含於該樹脂組合物的物質中，吸光劑可包括染料(可見光染料、紫外線染料、紅外線染料、螢光染料以及放射線偏光染料)、顏料、金屬、金屬化合物、金屬膜以及其他適當的吸收材料。作為適當的放射線吸收體的範例，可以是選自由碳黑、石墨粉末、碳奈米管等碳類無機粒子、金屬氧化物以及金屬硫化物構成的組中的一種或兩種以上的物質， 但本發明並不特別受此限制。 In the substance contained in the resin composition, the light absorbing agent may include a dye (visible dye, ultraviolet dye, infrared dye, fluorescent dye, and radiation polarizing dye), a pigment, a metal, a metal compound, a metal film, and other suitable absorbing materials. . An example of a suitable radiation absorber may be one or two or more selected from the group consisting of carbon-based inorganic particles such as carbon black, graphite powder, and carbon nanotubes, metal oxides, and metal sulfides. However, the invention is not particularly limited by this.
光分解層50內的吸光劑的含量可根據吸光劑的種類、粒子結構以及分散度等來變化。較佳地，可包含1~60重量%的吸光劑。在該吸光劑的含量小於1重量%的情況下，分解黏結劑樹脂的作用有可能甚微，在超過60重量%的情況下，由於產生過多的熱而有可能引發對於其它層的結合部的損傷，因而並非較佳。 The content of the light absorbing agent in the photo-decomposable layer 50 can be changed depending on the kind of the light absorbing agent, the particle structure, the degree of dispersion, and the like. Preferably, 1 to 60% by weight of a light absorbing agent may be contained. In the case where the content of the light absorbing agent is less than 1% by weight, the effect of decomposing the binder resin may be small, and in the case of more than 60% by weight, it is possible to cause a bond to other layers due to excessive heat generation. Damage is therefore not preferred.
同時，在光分解層內可包含1~50重量%的吸光劑，更佳地包含5~30重量%的吸光劑，以減少在進行光照射之後分離出塗敷有光分解層50的支撐體200時適用的力，並在進行晶圓研磨及生成晶圓背面的電路等程序時防止支撐體200與元件晶圓10的扭曲。在該吸光劑的含量小於1重量%的情況下，由於分解黏結劑樹脂的作用甚微，因而在剝離程序上有可能存在問題。在該吸光劑的含量超過50重量%的情況下，由於產生過多的熱而有可能引發元件晶圓10的圖案受損，隨著吸光劑的含量增加，光分解層的黏結力下降，因而有可能在進行疊層體的後續程序方面產生問題。 Meanwhile, 1 to 50% by weight of the light absorbing agent may be contained in the photodecomposition layer, and more preferably 5 to 30% by weight of the light absorbing agent is included to reduce the separation of the support coated with the photolysis layer 50 after the light irradiation. The force applied at 200 o'clock prevents the distortion of the support 200 and the component wafer 10 when performing processes such as wafer polishing and generating a circuit on the back side of the wafer. In the case where the content of the light absorbing agent is less than 1% by weight, since the effect of decomposing the binder resin is small, there is a possibility that there is a problem in the peeling procedure. In the case where the content of the light absorbing agent exceeds 50% by weight, the pattern of the element wafer 10 may be damaged due to excessive heat generation, and as the content of the light absorbing agent increases, the adhesion force of the photodecomposition layer decreases, thereby There may be problems in performing subsequent procedures for the laminate.
作為該樹脂組合物的其他成分的黏結劑發揮將吸光劑以及分散溶劑在基材層固化的作用，並在進行研磨晶圓以及生成晶圓背面電路等程序時發揮作為抑制支撐體200和元件晶圓10之間的扭曲的黏合劑的作用。該黏結劑作為能夠藉由紫外線或熱固化的有機物質，可以是包含選自由聚酯類樹脂、丙烯酸類樹脂、環氧類樹脂、矽類樹脂以及聚氨基甲酸乙酯類樹脂構成的組中的至少一種物質。 The binder which is another component of the resin composition functions to cure the light absorbing agent and the dispersion solvent in the base material layer, and functions as a suppression support body 200 and a component crystal when a process such as polishing a wafer and generating a wafer back surface circuit is performed. The effect of a twisted adhesive between the circles 10. The binder may be an organic substance that can be cured by ultraviolet rays or heat, and may include a group selected from the group consisting of polyester resins, acrylic resins, epoxy resins, oxime resins, and polyurethane resins. At least one substance.
較佳地，該黏結劑的含量為總固體量中的50~95重量%，更佳為60~90重量%，達到不妨礙所塗敷的固體物的分散性以及所塗敷的固體物殘留於基材層而不妨礙膜製備程序的程序性的程度。在該黏結劑的含量小於50重量%的情況下，由於相對於吸光劑的含量，黏結劑的含量低，因而光分解層的黏結力下降。因此，有可能在進行疊層體的後續程序方面產生問題。並且，在該黏結劑的含量超過95重量%的情況下，由於光分解層組合液的固體量及黏度上升，因而具有難以均勻塗敷的問題。 Preferably, the binder is contained in an amount of 50 to 95% by weight, more preferably 60 to 90% by weight, based on the total solid amount, so as not to hinder the dispersibility of the applied solid matter and the residual solid matter to be applied. The substrate layer does not interfere with the procedural extent of the film preparation procedure. In the case where the content of the binder is less than 50% by weight, since the content of the binder is low with respect to the content of the light absorbing agent, the bonding force of the photodecomposition layer is lowered. Therefore, it is possible to cause problems in performing subsequent procedures of the laminate. In addition, when the content of the binder exceeds 95% by weight, the solid amount and viscosity of the photodecomposition layer combination liquid increase, so that it is difficult to apply uniformly.
在該光分解層50的組合物中，作為分散溶劑，可使用使固 體物分散的性質優異的碳氫化合物類、酮類等，但是本發明並不限制於此。較佳地，作為本發明的分散溶劑，使用包含甲基乙基甲酮、甲基異丁基甲酮、甲醇、乙醇、異丙醇、甲苯以及環己酮中的至少一種物質。並且，可根據在用於形成光分解層的支撐體上進行塗敷的工藝來變更該分散溶劑的含量。 In the composition of the photo-decomposition layer 50, as a dispersion solvent, it can be used to fix Hydrocarbons, ketones, and the like which are excellent in the dispersion of the body, but the present invention is not limited thereto. Preferably, as the dispersion solvent of the present invention, at least one selected from the group consisting of methyl ethyl ketone, methyl isobutyl ketone, methanol, ethanol, isopropanol, toluene, and cyclohexanone is used. Further, the content of the dispersion solvent can be changed according to a process of applying on a support for forming a photo-decomposable layer.
並且，較佳地，該光分解層50具有50~500gf/inch的黏合力。在光分解層50的黏合力小於50gf/inch的情況下，具有在進行疊層體的後續程序方面因低黏合力而剝離的問題，並且有可能存在著多種化學藥品滲透等的問題。並且，在光分解層50的黏合力超過500gf/inch的情況下，由於在照射雷射後剝離力仍然很高而在進行剝離程序時有可能產生問題。 Further, preferably, the photo-decomposition layer 50 has an adhesive force of 50 to 500 gf/inch. When the adhesive force of the photo-decomposition layer 50 is less than 50 gf/inch, there is a problem in that the laminate is peeled off due to a low adhesive force in the subsequent procedure of the laminate, and there is a possibility that a plurality of chemicals penetrate and the like. Further, in the case where the adhesion of the photo-decomposable layer 50 exceeds 500 gf/inch, since the peeling force is still high after the irradiation of the laser, there is a possibility that a problem occurs when the peeling process is performed.
層疊層的黏合及剝離處理方法Lamination and peeling treatment method of laminated layer
以下，將對本發明的疊層體的黏合及剝離處理方法進行詳細說明。 Hereinafter, the method of bonding and peeling the laminate of the present invention will be described in detail.
第4圖為簡要表示本發明的疊層體的黏合及剝離處理方法的流程圖。參照第4圖，本發明的疊層體的黏合及剝離處理方法，其包括以下步驟：步驟(a)，在一元件晶圓的一面形成一保護層(步驟S110)；步驟(b)，在一承載晶圓的一面形成一填充層(步驟S120)，步驟(c)：在該填充層上的一部分形成一光分解層(步驟S121)；步驟(d)，接合該保護層和該光分解層，來使該元件晶圓和該承載晶圓臨時接合(步驟S200)；以及步驟(e)，向該光分解層照射雷射，來使該元件晶圓和該承載晶圓分離(步驟S300)。 Fig. 4 is a flow chart schematically showing a method of bonding and peeling a laminate of the present invention. Referring to Fig. 4, a method for bonding and peeling a laminate of the present invention comprises the steps of: (a) forming a protective layer on one side of a component wafer (step S110); and step (b), a side of the carrying wafer forms a filling layer (step S120), step (c): forming a photo-decomposing layer on a portion of the filling layer (step S121); step (d), bonding the protective layer and the photo-decomposing a layer for temporarily bonding the component wafer and the carrier wafer (step S200); and step (e), irradiating the photo-decomposition layer with a laser to separate the component wafer from the carrier wafer (step S300) ).
作為上述步驟(a)的形成保護層20的步驟(步驟S110)和作為步驟(b)的形成填充層40的步驟(步驟S120)以及作為步驟(c)的形成光分解層50的步驟(步驟S121)在順序上並不受特殊限制。該保護層20、填充層40及光分解層50可分別個別形成於元件晶圓10及承載晶圓30上。 The step of forming the protective layer 20 as the above step (a) (step S110) and the step of forming the filling layer 40 as the step (b) (step S120) and the step of forming the photo-decomposition layer 50 as the step (c) (step) S121) is not particularly limited in order. The protective layer 20, the filling layer 40, and the photo-decomposing layer 50 may be separately formed on the element wafer 10 and the carrier wafer 30.
步驟(a)，形成保護層的步驟(步驟S110) Step (a), a step of forming a protective layer (step S110)
首先，在形成保護層20的步驟(步驟S110)中，在元件晶 圓10的一面形成具有離型力的層。該保護層20可藉由利用勻膠機(spin coater)等塗敷裝置來在元件晶圓10的接合面整體進行塗敷後固化而成。 First, in the step of forming the protective layer 20 (step S110), in the element crystal One side of the circle 10 forms a layer having a release force. The protective layer 20 can be formed by coating and curing the entire bonding surface of the element wafer 10 by a coating device such as a spin coater.
步驟(b)，形成填充層的步驟(步驟S120) Step (b), the step of forming a filling layer (step S120)
之後，在形成填充層40的步驟(步驟S120)中，在承載晶圓30的一面(與該元件晶圓相接合的接合面)形成填充層40。 Thereafter, in the step of forming the filling layer 40 (step S120), the filling layer 40 is formed on one side of the carrier wafer 30 (the bonding surface joined to the element wafer).
與該保護層20相同，也可利用勻膠機等塗敷裝置來形成該填充層40。可藉由在該承載晶圓30的一面整體塗敷填充層形成物質後經紫外線固化來形成該填充層40。該填充層40可根據填充層形成物質的黏度來數次塗敷並層疊該填充層形成物質，來得到所希望的厚度。 Similarly to the protective layer 20, the filling layer 40 may be formed by a coating device such as a glue dispenser. The filling layer 40 can be formed by applying a filling layer forming material to one surface of the carrier wafer 30 and curing it by ultraviolet rays. The filling layer 40 can apply and laminate the filling layer forming material several times in accordance with the viscosity of the filling layer forming material to obtain a desired thickness.
在本發明中，可適當選擇紫外線燈的光能種類或用於光照射的燈的種類等。作為具體的範例，可使用化學螢光燈、黑光燈、殺菌燈等低壓燈或金屬鹵化物燈、高壓水銀燈等高壓燈。可根據所需要的特性來設定紫外線的照射量。在本發明的疊層體處理方法中，可將紫外線的照射量設定為100至5000mJ/cm2，較佳為500至4000mJ/cm2，更佳為1000至3000mJ/cm2範圍的照射量。 In the present invention, the type of light energy of the ultraviolet lamp, the type of lamp used for light irradiation, and the like can be appropriately selected. As a specific example, a low-pressure lamp such as a chemical fluorescent lamp, a black light lamp, a germicidal lamp, or a high-pressure lamp such as a metal halide lamp or a high-pressure mercury lamp can be used. The amount of ultraviolet light irradiation can be set according to the required characteristics. In the laminate processing method of the present invention, the irradiation amount of the ultraviolet rays can be set to an irradiation amount in the range of 100 to 5,000 mJ/cm 2 , preferably 500 to 4,000 mJ/cm 2 , more preferably 1,000 to 3,000 mJ/cm 2 .
步驟(c)，形成光分解層的步驟(步驟S121) Step (c), a step of forming a photodecomposition layer (step S121)
之後，在形成該光分解層50的步驟(步驟S121)中，在該填充層40上的一部分形成光分解層50。如上所述，較佳地，本發明的光分解層50形成於該填充層40上的邊緣部分。 Thereafter, in the step of forming the photo-decomposition layer 50 (step S121), a part of the filling layer 40 is formed with the photo-decomposition layer 50. As described above, preferably, the photo-decomposable layer 50 of the present invention is formed on the edge portion of the filling layer 40.
可藉由使用勻膠機等塗敷裝置來形成光分解層50。在填充層40塗敷光分解層形成物質後借助熱進行固化來形成該光分解層50。較佳地，光分解層50尤其以圓形形成在填充層40的最週邊。如上所述，能夠以5mm以下的寬度來形成該光分解層50，較佳地，以3mm以下形成。這是由於在元件晶圓10的週邊3mm的範圍沒有如元件晶圓的電路面的圖案(pattern)等結構，因而是不直接使用的部分。 The photo-decomposition layer 50 can be formed by using a coating device such as a glue dispenser. The photo-decomposition layer 50 is formed by applying a photodecomposition layer forming material to the filling layer 40 and then curing it by heat. Preferably, the photo-decomposition layer 50 is formed in a circular shape, particularly at the outermost periphery of the filling layer 40. As described above, the photo-decomposition layer 50 can be formed with a width of 5 mm or less, preferably 3 mm or less. This is because the structure of 3 mm in the periphery of the element wafer 10 does not have a structure such as a pattern of the circuit surface of the element wafer, and thus is not directly used.
步驟(d)，臨時接合步驟(步驟S200) Step (d), temporary joining step (step S200)
之後，在元件晶圓10和承載晶圓20的臨時接合步驟(步驟S200)中，藉由接合該保護層20和該光分解層50，來使該元件晶圓和該承載晶圓臨時接合。藉由該步驟形成本發明的疊層體100。 Thereafter, in the temporary bonding step (step S200) of the component wafer 10 and the carrier wafer 20, the component wafer and the carrier wafer are temporarily bonded by bonding the protective layer 20 and the photo-decomposition layer 50. The laminate 100 of the present invention is formed by this step.
該疊層體100具有元件晶圓10、承載晶圓30以及用於接合上述兩種晶圓的一種黏合劑層，該黏合劑層包括：保護層20，其形成於元件晶圓10，填充層40，其形成於承載晶圓30，並與保護層20相接觸；以及光分解層50，其形成於填充層40上的一部分(較佳為邊緣部分)，並與保護層20相接觸。 The laminate 100 has a component wafer 10, a carrier wafer 30, and an adhesive layer for bonding the two wafers. The adhesive layer includes a protective layer 20 formed on the component wafer 10 and filled with layers. 40, which is formed on the carrier wafer 30 and is in contact with the protective layer 20; and a photo-decomposition layer 50 formed on a portion (preferably an edge portion) of the filling layer 40 and in contact with the protective layer 20.
該光分解層50維持與該保護層20強力結合的狀態，以防止在元件晶圓10的研磨及後續程序期間元件晶圓10晃動和扭曲。 The photo-decomposition layer 50 maintains a state of being strongly bonded to the protective layer 20 to prevent the component wafer 10 from being shaken and twisted during the polishing of the element wafer 10 and subsequent processes.
步驟(e)，分離步驟(S300) Step (e), separation step (S300)
之後，使該元件晶圓10和該承載晶圓30分離的步驟(步驟S300)的特徵在於，向該光分解層50照射雷射來使該元件晶圓10和該承載晶圓30分離。 Thereafter, the step of separating the element wafer 10 from the carrier wafer 30 (step S300) is characterized in that the photo-decomposition layer 50 is irradiated with a laser to separate the element wafer 10 from the carrier wafer 30.
在使該元件晶圓10和該承載晶圓30分離的步驟中，向形成於該元件晶圓10和該承載晶圓30之間的光分解層50照射雷射，來降低與該保護層20強力結合的光分解層50的結合力。像這樣藉由降低該光分解層50和該保護層20的黏合力，能夠容易地使該元件晶圓10和該承載晶圓30分離。在本發明中，為了降低該光分解層50的黏合力而照射的雷射可使用以約1064nm的波長放射光的摻釹釔鋁石榴石(ND-YAG)雷射。 In the step of separating the component wafer 10 and the carrier wafer 30, a laser is irradiated to the photo-decomposition layer 50 formed between the component wafer 10 and the carrier wafer 30 to reduce the protective layer 20 The bonding force of the strongly bonded photolysis layer 50. By reducing the adhesion between the photo-decomposable layer 50 and the protective layer 20, the element wafer 10 and the carrier wafer 30 can be easily separated. In the present invention, a laser irradiated to reduce the adhesion of the photo-decomposable layer 50 may use an ytterbium-doped aluminum garnet (ND-YAG) laser which emits light at a wavelength of about 1064 nm.
在照射雷射後，晶圓疊層體100的光分解層50的黏合力將下降。在這裡，可在該光分解層50和該保護層20之間***末端尖銳的***體，由此可使元件晶圓10和承載晶圓30之間的分離更加容易。 After the laser is irradiated, the adhesion of the photo-decomposition layer 50 of the wafer laminate 100 will decrease. Here, a sharp-edged insertion body can be inserted between the photo-decomposition layer 50 and the protective layer 20, whereby separation between the element wafer 10 and the carrier wafer 30 can be made easier.
同時，本發明的疊層體之黏合及剝離處理方法包括以下步驟：步驟(a)，在一承載晶圓30的一面形成一保護層20；步驟(b)，在一元件晶圓10的一面形成一填充層40；步驟(c)，在該填充層40上的一部分形成一光分解層50；步驟(d)：接合該保護層20和該光分解層50，來使該元件晶圓10和該承載晶圓30臨時接合；步驟(e)，向該光分解層50照射雷射，來使該元件晶圓10和該承載晶圓30分離。 Meanwhile, the method for bonding and peeling a laminate of the present invention comprises the steps of: (a) forming a protective layer 20 on one side of a carrier wafer 30; and (b), one side of a component wafer 10; Forming a filling layer 40; step (c), forming a photo-decomposing layer 50 on a portion of the filling layer 40; and (d) bonding the protective layer 20 and the photo-decomposing layer 50 to bond the device wafer 10 The carrier wafer 30 is temporarily bonded to the carrier wafer 30; in step (e), the photo-decomposition layer 50 is irradiated with a laser to separate the component wafer 10 from the carrier wafer 30.
亦即，該保護層20可形成於該承載晶圓30的一面，而不是該元件晶圓10，該填充層40可形成於該元件晶圓10的一面。 That is, the protective layer 20 may be formed on one side of the carrier wafer 30 instead of the component wafer 10, and the filling layer 40 may be formed on one side of the component wafer 10.
以下，藉由本發明的實施例來對本發明進行更加詳細的說明 但是本發明的範圍並不限定於下述中所提出的實施例。 Hereinafter, the present invention will be described in more detail by way of embodiments of the present invention. However, the scope of the invention is not limited to the embodiments set forth below.
實施例1Example 1
1、在元件晶圓上形成保護層1. Form a protective layer on the component wafer
在330mm(直徑)×0.75mm(厚度)的矽晶圓旋轉塗敷保護層。作為保護層使用了用甲苯(Toluene)稀釋至30%的由聚二甲矽氧烷(polydimethylsiloxane)組成的附加反應型矽化合物的產品[KS847H，韓國信越矽膠有限公司(Shin-Etsu Silicone Korea Co.,Ltd)]。本實施例的保護層組合物中包含100重量份的矽化合物、1.5重量份的鉑乙醯丙酮[CAT-PL-50T，韓國信越矽膠有限公司(Shin-Etsu Silicone Korea Co.,Ltd)]、250重量份的甲苯(Toluene)、250重量份的甲基乙基甲酮(Methyl Ethyl Ketone，MEK)。最終組合物的黏度為12cps，固體量為5.3%。 The protective layer was spin-coated on a ruthenium wafer of 330 mm (diameter) × 0.75 mm (thickness). As a protective layer, a product of an additional reaction type ruthenium compound consisting of polydimethylsiloxane diluted to 30% with toluene was used [KS847H, Shin-Etsu Silicone Korea Co., Ltd. (Shin-Etsu Silicone Korea Co.) ,Ltd)]. The protective layer composition of the present embodiment contains 100 parts by weight of a ruthenium compound, 1.5 parts by weight of platinum acetoacetate [CAT-PL-50T, Shin-Etsu Silicone Korea Co., Ltd.], 250 parts by weight of toluene, 250 parts by weight of methyl ethyl ketone (Methyl Ethyl Ketone, MEK). The final composition had a viscosity of 12 cps and a solids content of 5.3%.
所製備的保護層組合物藉由旋轉塗敷適用於該晶圓。初期以100rpm(每分鐘轉數)準確地向旋轉的該晶圓的中心排出10ml的保護層組合物。之後以2800rpm旋轉，並在晶圓的前表面塗敷保護層組合物。向乾燥部移動完成旋轉塗敷的晶圓，並在150℃下進行了3分鐘的乾燥及固化，之後向冷卻部移動來進行冷卻。完成程序的晶圓塗敷有1μm厚度的保護層。 The prepared protective layer composition is applied to the wafer by spin coating. Initially, 10 ml of the protective layer composition was accurately discharged to the center of the rotated wafer at 100 rpm (revolutions per minute). Thereafter, it was rotated at 2800 rpm, and a protective layer composition was applied to the front surface of the wafer. The spin-coated wafer was moved to the drying section, dried and solidified at 150 ° C for 3 minutes, and then moved to the cooling section to be cooled. The finished wafer was coated with a protective layer having a thickness of 1 μm.
2、在承載晶圓上形成填充層及光分解層2. Forming a filling layer and a photo-decomposing layer on the carrier wafer
在330.5mm(直徑)×0.75mm(厚度)的承載晶圓旋轉塗敷了填充層及光分解層。 A filling layer and a photo-decomposing layer were spin-coated on a carrier wafer of 330.5 mm (diameter) × 0.75 mm (thickness).
用於填充層的氨基甲酸乙酯丙烯酸酯低聚物[PU-210，味元化工有限公司(Miwon Specialty Chemical Co.,Ltd.)]用光聚合性單體[M200，味元化工有限公司(Miwon Specialty Chemical Co.,Ltd.)]稀釋後使用，並添加光聚合引發劑[IRG-184D，汽巴精化有限公司(Ciba Specialty Chemical Co.,Ltd.)]來製備出填充層。填充層組合物的配比及黏度見下表1。 Urethane acrylate oligomer for filling layer [PU-210, Miwon Specialty Chemical Co., Ltd.] using photopolymerizable monomer [M200, Weiyuan Chemical Co., Ltd. ( Miwon Specialty Chemical Co., Ltd.) was used after dilution, and a photopolymerization initiator [IRG-184D, Ciba Specialty Chemical Co., Ltd.] was added to prepare a packed layer. The ratio and viscosity of the filling layer composition are shown in Table 1 below.
藉由旋轉塗敷向該承載晶圓塗敷了所製備出的填充層組合物。初期以100rpm準確地向該旋轉的承載晶圓的中心排出30ml的填充層組合物。之後以1800rpm旋轉，並在承載晶圓的前表面塗敷了該組合物。向紫外線曝光裝置移送塗敷了填充層的承載晶圓，並藉由80mW、1500mJ的光照射來進行光固化。再向旋轉塗敷裝置移送完成光固化的承載晶圓，並在該填充層上的邊緣部分塗敷光分解層組合物。向乾燥部移動塗敷有填充層及光分解層的晶圓，並在150℃下進行3分鐘乾燥，之後向冷卻部移動來進行冷卻。完成程序的晶圓在晶圓的邊緣位置2mm的寬度塗敷有光固化層，所塗敷的光固化層的厚度被測定為1μm。 The prepared fill layer composition is applied to the carrier wafer by spin coating. Initially, 30 ml of the filling layer composition was accurately discharged to the center of the rotating carrier wafer at 100 rpm. It was then rotated at 1800 rpm and the composition was applied to the front surface of the carrier wafer. The carrier wafer coated with the filling layer was transferred to an ultraviolet exposure apparatus, and photocured by light irradiation of 80 mW and 1500 mJ. The photocured carrier wafer is transferred to the spin coating apparatus, and the photodecomposition layer composition is applied to the edge portion of the filling layer. The wafer coated with the filling layer and the photo-decomposable layer was moved to the drying portion, dried at 150 ° C for 3 minutes, and then moved to the cooling portion to be cooled. The wafer on which the program was completed was coated with a photocured layer at a width of 2 mm at the edge position of the wafer, and the thickness of the applied photocured layer was measured to be 1 μm.
作為光分解層使用了被聚合為丙烯酸單體的丙烯酸類樹脂[(P-140H，AK化工科技有限公司(AK Chemtech Co.,Ltd)]，作為吸光劑使用了碳黑[(MA-100，世界管業有限公司(World Tube Co.,Ltd)]分散於甲基乙基甲酮(Methyl Ethly Ketone)的。光分解層的組成比見下表2。 As the photodecomposition layer, an acrylic resin [(P-140H, AK Chemtech Co., Ltd.)) which is polymerized as an acrylic monomer is used, and carbon black [(MA-100,) is used as a light absorbing agent. World Tube Co., Ltd. was dispersed in methyl ethyl ketone (Methyl Ethly Ketone). The composition ratio of the photodecomposition layer is shown in Table 2 below.
3、臨時接合及分離3. Temporary joint and separation
形成有保護層的元件晶圓和形成有填充層及光分解層的承 載晶圓的接合在常溫及真空腔室內執行，在荷重為4ton.f且接合時間為300秒的條件下實施。 a component wafer formed with a protective layer and a carrier formed with a filling layer and a photodecomposition layer The bonding of the carrier wafer was performed at room temperature and in a vacuum chamber, and was carried out under the conditions of a load of 4 ton.f and a bonding time of 300 seconds.
實施例2Example 2
實施例2中，除了在承載晶圓形成保護層，並在元件晶圓形成填充層及光分解層之外，按照與實施例1相同的方法製備出疊層體。 In Example 2, a laminate was produced in the same manner as in Example 1 except that a protective layer was formed on the carrier wafer, and a filling layer and a photo-decomposable layer were formed on the element wafer.
實施例3Example 3
實施例3中，除了光分解層中包含環氧類樹脂之外，按照與實施例1相同的方法製備出疊層體。 In Example 3, a laminate was produced in the same manner as in Example 1 except that the epoxy resin was contained in the photo-decomposable layer.
實施例4Example 4
實施例4中，除了光分解層中包含氨基甲酸乙酯類樹脂之外，按照與實施例1相同的方法製備出疊層體。 In Example 4, a laminate was prepared in the same manner as in Example 1 except that the urethane-based resin was contained in the photo-decomposable layer.
實施例5Example 5
實施例5中，除了在填充層上的邊緣位置以10mm的寬度塗敷光分解層之外，按照與實施例1相同的方法製備出疊層體。 In Example 5, a laminate was produced in the same manner as in Example 1 except that the photo-decomposition layer was applied at a position on the filling layer at a width of 10 mm.
實施例6Example 6
實施例6中，除了使用4.8重量%的碳奈米管(Carbon Nano-tubes)作為光分解層的吸光劑之外，按照與實施例1相同的方法製備出疊層體。 In Example 6, a laminate was prepared in the same manner as in Example 1 except that 4.8% by weight of carbon nanotubes (Carbon Nano-tubes) was used as a light absorbing agent for the photodecomposition layer.
實施例7Example 7
實施例7中，除了在填充層中未用光聚合性單體稀釋氨基甲酸乙酯丙烯酸酯低聚物之外，按照與實施例1相同的方法製備出疊層體。 In Example 7, a laminate was prepared in the same manner as in Example 1 except that the urethane acrylate oligomer was not diluted with the photopolymerizable monomer in the packed bed.
實施例1至實施例7的測試(Test)Test of Example 1 to Example 7 (Test)
在接合該等實施例的各晶圓後，以肉眼及顯微鏡觀察了介面的黏合情況，並將未產生異常的情況評價為○(優異)或△(良好)，並將產生異常的情況評價為不良。 After joining the wafers of the examples, the bonding of the interface was observed with the naked eye and the microscope, and the case where no abnormality occurred was evaluated as ○ (excellent) or Δ (good), and the abnormality was evaluated as bad.
對接合的晶圓使用研磨機來進行了元件晶圓的背面研削。最終將元件晶圓的厚度研削至50μm後，用肉眼及顯微鏡實施外觀檢查。將未產生異常的情況評價為○(優異)或△(良好)，並將產生異常的情況評價為不良。 The back side of the component wafer was ground using a grinder on the bonded wafer. After the thickness of the component wafer was finally ground to 50 μm, visual inspection was performed with the naked eye and a microscope. The case where no abnormality occurred was evaluated as ○ (excellent) or Δ (good), and the occurrence of the abnormality was evaluated as poor.
將接合的晶圓放入氮氧氣下的200℃的烘箱1小時後，進行冷卻，之後用肉眼及顯微鏡實施外觀檢查。將未產生異常的情況評價為○(優異)或△(良好)，並將產生異常的情況評價為不良。 The bonded wafer was placed in an oven at 200 ° C for 1 hour under nitrogen and oxygen, and then cooled, and then visually inspected with the naked eye and a microscope. The case where no abnormality occurred was evaluated as ○ (excellent) or Δ (good), and the occurrence of the abnormality was evaluated as poor.
將接合的晶圓含浸於各裝有酸、鹼以及溶劑的桶，分時間段放置後取出並實施外觀檢查。將未產生異常的情況評價為○(優異)或△(良好)，並將產生異常的情況評價為不良。 The bonded wafer is impregnated into each of the barrels containing the acid, the alkali, and the solvent, and after being placed for a period of time, it is taken out and subjected to visual inspection. The case where no abnormality occurred was evaluated as ○ (excellent) or Δ (good), and the occurrence of the abnormality was evaluated as poor.
向塗敷於所接合的晶圓的邊緣位置的光分解層照射以1064nm的波長放射光的摻釹釔鋁石榴石(ND-YAG)雷射。將所接合的晶圓的邊緣位置全部照射所需的時間為3秒鐘。在照射雷射後，分離元件晶圓和承載晶圓並實施外觀檢查。將未產生異常的情況評價為○(優異)或△(良好)，並將產生異常的情況評價為不良。 An ytterbium-doped aluminum garnet (ND-YAG) laser that emits light at a wavelength of 1064 nm is irradiated to the photo-decomposing layer applied to the edge position of the bonded wafer. The time required to illuminate all of the edge positions of the bonded wafers was 3 seconds. After the laser is irradiated, the component wafer and the carrier wafer are separated and a visual inspection is performed. The case where no abnormality occurred was evaluated as ○ (excellent) or Δ (good), and the occurrence of the abnormality was evaluated as poor.
本發明的實施例在晶圓間的接合性、研削性、耐熱性、耐化學性以及分離性方面均未產生異常。 The examples of the present invention did not cause any abnormality in the inter-wafer bonding property, the grinding property, the heat resistance, the chemical resistance, and the separation property.
在這裡，雖然實施例5的情況在分離性方面雖不至於存在異常，但與其他多個實施例分離性優異相比，實施例5被評價為良好。分析其原因是由於實施例5的光分解層具有10mm的寬度，因而雷射照射的範圍需要比其他實施例寬，並需更延長雷射照射時間。即，分析為在程序的 效率性方面，除了實施例5之外的其他多個實施例更為優異。 Here, in the case of Example 5, although there was no abnormality in the separation property, Example 5 was evaluated as being superior to the other examples. The reason for the analysis is that since the photo-decomposing layer of Embodiment 5 has a width of 10 mm, the range of laser irradiation needs to be wider than that of the other embodiments, and it is necessary to extend the laser irradiation time. That is, the analysis is in the program In terms of efficiency, many other embodiments than Example 5 are more excellent.
並且，實施例7在接合性方面雖不至於存在異常，但與其他多個實施例接合性優異相比，實施例7被評價為良好。實施例7在形成填充層時未用光聚合性單體稀釋氨基甲酸乙酯低聚物，由此與其他多個實施例相比，不容易形成填充層。分析其原因是由於形成填充層的氨基甲酸乙酯低聚物的黏度為20000以上。因此，分析為實施例7在填充層與保護層互相接合時，與其他多個實施例相比，接合性並不優異。 Further, in Example 7, although there was no abnormality in the bonding property, Example 7 was evaluated as being excellent as compared with the other examples. In Example 7, the urethane oligomer was not diluted with the photopolymerizable monomer at the time of forming the packed layer, whereby the filled layer was not easily formed as compared with the other various examples. The reason for the analysis was that the viscosity of the urethane oligomer forming the packed layer was 20,000 or more. Therefore, in the analysis of Example 7, when the filling layer and the protective layer were bonded to each other, the bonding property was not excellent as compared with the other plural examples.
比較例1Comparative example 1
比較例1與實施例1不同，在填充層的前表面形成光分解層來製備出疊層體。 In Comparative Example 1, unlike the first embodiment, a photo-decomposition layer was formed on the front surface of the packed bed to prepare a laminate.
如比較例1，向承載晶圓上照射20秒鐘雷射後使元件晶圓和承載晶圓分離，以使元件晶圓和承載晶圓剝離。分離後，對比較例1的疊層體實施外觀檢查的結果觀察到，由於形成於填充層的前表面的光分解層和激光反應而在元件晶圓的表面出現了如同被熱燒焦似的斑紋。即，與多個實施例相比，比較例1的程序效率非常差，並且評價為在元件晶圓的表面存在異常。 As in Comparative Example 1, the component wafer and the carrier wafer were separated by irradiating the carrier wafer with a 20 second laser to peel off the component wafer and the carrier wafer. After the separation, the appearance inspection of the laminate of Comparative Example 1 was observed, and it was observed that the photodecomposition layer formed on the front surface of the filling layer reacted with the laser to appear on the surface of the element wafer as if it was burnt by heat. Marking. That is, the program efficiency of Comparative Example 1 was extremely inferior compared to the plurality of examples, and it was evaluated that there was an abnormality on the surface of the element wafer.
雖然本發明已用較佳實施例揭露如上，然其並非用以限定本發明，本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described above in terms of the preferred embodiments, the invention is not intended to limit the invention, and the invention may be practiced without departing from the spirit and scope of the invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims.
10‧‧‧元件晶圓 10‧‧‧Component Wafer
20‧‧‧保護層 20‧‧‧Protective layer
30‧‧‧承載晶圓 30‧‧‧Loading wafer
40‧‧‧填充層 40‧‧‧Filling layer
50‧‧‧光分解層 50‧‧‧Light decomposition layer
100‧‧‧疊層體 100‧‧‧Laminated body
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| TWI587426B (en) * | 2014-09-16 | 2017-06-11 | Toshiba Kk | A manufacturing method of a semiconductor device, and a semiconductor manufacturing apparatus |
| TWI640089B (en) * | 2016-05-30 | 2018-11-01 | 大陸商蘇州晶方半導體科技股份有限公司 | Packing structure and packing method |
| TWI755996B (en) * | 2020-12-24 | 2022-02-21 | 天虹科技股份有限公司 | Wafer holder for generating uniform temperature and thin film deposition device using the wafer holder |
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| KR101617316B1 (en) * | 2013-08-14 | 2016-05-02 | 코스텍시스템(주) | A method for bonding / de-bonding of device wafer and carrier wafer and apparatus for bonding/de-bonding |
| US8962449B1 (en) * | 2013-07-30 | 2015-02-24 | Micron Technology, Inc. | Methods for processing semiconductor devices |
| KR101532756B1 (en) * | 2014-03-28 | 2015-07-01 | 주식회사 이녹스 | Thermosetting temporary-bonding-film for semiconductor wafer, laminated body comprising the same and method for debonding laminated body |
| JP6216727B2 (en) * | 2014-05-08 | 2017-10-18 | 東京応化工業株式会社 | Support separation method |
| JP6524972B2 (en) * | 2015-09-28 | 2019-06-05 | Jsr株式会社 | Method of treating object, composition for temporary fixation, semiconductor device and method of manufacturing the same |
| US10074626B2 (en) * | 2016-06-06 | 2018-09-11 | Shin-Etsu Chemical Co., Ltd. | Wafer laminate and making method |
| CN107611075A (en) * | 2017-09-04 | 2018-01-19 | 华进半导体封装先导技术研发中心有限公司 | A kind of interim bonding structure and interim bonding method |
| KR20210135111A (en) | 2020-05-04 | 2021-11-12 | 삼성전자주식회사 | Method of manufacturing semiconductor package |
| CN115346437B (en) * | 2022-08-03 | 2023-07-25 | 武汉华星光电半导体显示技术有限公司 | Display module and display device |
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| JP4565804B2 (en) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | Laminate including ground substrate, method for producing the same, method for producing ultrathin substrate using laminate, and apparatus therefor |
| JP4514409B2 (en) * | 2003-02-20 | 2010-07-28 | 日東電工株式会社 | Method for temporarily fixing semiconductor wafer, electronic component, and circuit board |
| US7785938B2 (en) * | 2006-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using semiconductor integrated circuit |
| AT508318B1 (en) * | 2008-01-24 | 2022-07-15 | Brewer Science Inc | PROCEDURE FOR TEMPORARILY MOUNTING A DEVICE WAFER ON A SUPPORT SUBSTRATE |
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| TWI587426B (en) * | 2014-09-16 | 2017-06-11 | Toshiba Kk | A manufacturing method of a semiconductor device, and a semiconductor manufacturing apparatus |
| US10199253B2 (en) | 2014-09-16 | 2019-02-05 | Toshiba Memory Corporation | Method for manufacturing semiconductor devices through peeling using UV-ray |
| TWI640089B (en) * | 2016-05-30 | 2018-11-01 | 大陸商蘇州晶方半導體科技股份有限公司 | Packing structure and packing method |
| TWI755996B (en) * | 2020-12-24 | 2022-02-21 | 天虹科技股份有限公司 | Wafer holder for generating uniform temperature and thin film deposition device using the wafer holder |
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