TW201410917A - Echtant and method for manufacturing display device using the same - Google Patents
Echtant and method for manufacturing display device using the same Download PDFInfo
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發明背景 Background of the invention
本發明之例示性具體實例係關於蝕刻劑以及藉由使用該蝕刻劑於製造顯示裝置之方法。 Illustrative specific examples of the present invention relate to an etchant and a method of manufacturing a display device by using the etchant.
一般而言，在製造薄膜電晶體陣列面板時，用於閘極線路及資料線路之金屬層典型地分層於基板上，此後，可能需要蝕刻該等金屬層。 In general, when fabricating a thin film transistor array panel, the metal layers for the gate and data lines are typically layered on the substrate, after which it may be necessary to etch the metal layers.
關於閘極線路及資料線路，已使用具有良好導電性及低電阻之銅。但當使用銅時，在塗佈光阻且使該光阻圖案化之製程中使用單一銅膜可能存在困難。因此，多層金屬膜可應用於閘極線路及資料線路。 Regarding the gate line and the data line, copper having good conductivity and low resistance has been used. However, when copper is used, it may be difficult to use a single copper film in a process of coating photoresist and patterning the photoresist. Therefore, a multilayer metal film can be applied to a gate line and a data line.
舉例而言，在多層金屬膜中，已廣泛使用鈦/銅雙膜。 令人遺憾的是，當同時蝕刻鈦/銅雙膜時，蝕刻輪廓不佳，因此在隨後製程中存在困難。 For example, in a multilayer metal film, a titanium/copper double film has been widely used. Unfortunately, when the titanium/copper double film is simultaneously etched, the etching profile is poor, and thus there are difficulties in the subsequent process.
因此，需要提供與蝕刻鈦/銅膜相關之所需蝕刻輪廓。 Therefore, it is desirable to provide the desired etch profile associated with etching a titanium/copper film.
在此先前技術部分中揭示之以上資訊僅為促進理解本發明之背景，因此其可含有不構成此國家中一般技術者已知之先前技術的資訊。 The above information disclosed in this prior art section is only for facilitating an understanding of the background of the invention, and thus may contain information that does not constitute prior art known to those of ordinary skill in the art.
本發明滿足此等及其他需求，在本發明之例示性具體實例中提供一種蝕刻劑，其提供與所要鈦/銅膜蝕刻相關之蝕刻輪廓。 The present invention satisfies these and other needs, and in an illustrative embodiment of the invention provides an etchant that provides an etch profile associated with the desired titanium/copper film etch.
本發明之例示性具體實例揭示一種蝕刻劑。該蝕刻劑包含約0.5 wt%至約20 wt%過硫酸鹽、約0.01 wt%至約2 wt%氟化合物、約1 wt%至約10 wt%無機酸、約0.5 wt%至約5 wt%環胺化合物、約0.1 wt%至約5 wt%氯化合物、約0.05 wt%至約3 wt%銅鹽、約0.1 wt%至約10 wt%有機酸或有機酸鹽及水。 An illustrative embodiment of the invention discloses an etchant. The etchant comprises from about 0.5 wt% to about 20 wt% persulfate, from about 0.01 wt% to about 2 wt% fluorine compound, from about 1 wt% to about 10 wt% mineral acid, from about 0.5 wt% to about 5 wt% A cyclic amine compound, from about 0.1 wt% to about 5 wt% chlorine compound, from about 0.05 wt% to about 3 wt% copper salt, from about 0.1 wt% to about 10 wt% organic or organic acid salt, and water.
本發明之例示性具體實例揭示一種使用蝕刻劑於製造顯示裝置之方法。該方法包括在絕緣基板上形成閘極金屬層。該方法包括藉由使用蝕刻劑蝕刻該閘極金屬層形成包含閘極電極之閘極線。該方法亦包括在該閘極線上形成閘極絕緣層。該方法包括在該閘極絕緣層上形成非晶矽層及資料金屬層。該方法包括藉由蝕刻該非晶矽層及該資料金屬層形成半導體、歐姆接觸層、包含源極之資料線及集極。該方法亦包括在鈍化層上形成連接至該集極之像素電極。該方法包括用於蝕刻製程之蝕刻劑且該蝕刻劑包含約0.5 wt%至約20 wt%過硫酸鹽、約0.01 wt%至約2 wt%氟化合物、約1 wt%至約10 wt%無機酸、約0.5 wt%至約5 wt%環胺化合物、約0.1 wt%至約5 wt%氯化合物、約0.05 wt%至約3 wt%銅鹽、約0.1 wt%至約10 wt%有機酸或有機酸鹽及水。 An illustrative embodiment of the invention discloses a method of making a display device using an etchant. The method includes forming a gate metal layer on an insulating substrate. The method includes etching a gate metal layer by using an etchant to form a gate line including a gate electrode. The method also includes forming a gate insulating layer on the gate line. The method includes forming an amorphous germanium layer and a data metal layer on the gate insulating layer. The method includes forming a semiconductor, an ohmic contact layer, a data line including a source, and a collector by etching the amorphous germanium layer and the data metal layer. The method also includes forming a pixel electrode coupled to the collector on the passivation layer. The method includes an etchant for an etch process and the etchant comprises from about 0.5 wt% to about 20 wt% persulfate, from about 0.01 wt% to about 2 wt% fluorine compound, from about 1 wt% to about 10 wt% inorganic Acid, from about 0.5 wt% to about 5 wt% of a cyclic amine compound, from about 0.1 wt% to about 5 wt% of a chlorine compound, from about 0.05 wt% to about 3 wt% of a copper salt, from about 0.1 wt% to about 10 wt% of an organic acid Or organic acid salts and water.
應瞭解，以上概述與以下詳細描述皆為例示性及說明性的，且意欲提供對所主張之本發明之進一步說明。 It is to be understood that both the claims
下文中，參考展示本發明具體實例之隨附圖式，更充 分地描述本發明。然而，本發明可以許多不同形式體現且不應理解為限於本文中所闡述之具體實例。確切地說，提供此等具體實例以使本發明透徹，且將本發明之範疇充分傳達給熟習此項技術者。圖式中，為求清晰，可誇大層及區域之尺寸以及相對尺寸。圖式中相同參考數字表示相同元件。 Hereinafter, with reference to the accompanying drawings showing specific examples of the present invention, The invention is described in a separate manner. However, the invention may be embodied in many different forms and should not be construed as being limited to the specific examples set forth herein. Rather, these specific examples are provided to be thorough of the invention and the scope of the invention is fully disclosed to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity. The same reference numerals in the drawings denote the same elements.
圖式中，為求清晰，可誇大層、膜、面板及區域之厚度。貫穿本說明書，相同參考數字表示相同元件。應瞭解當稱諸如層、膜、區域或基板之元件「在」另一元件「上」時，其可直接在另一元件上或亦可存在介入元件。相比之下，當稱元件「直接在」另一元件「上」時，不存在介入元件。 In the drawings, the thickness of layers, films, panels, and regions may be exaggerated for clarity. Throughout the specification, the same reference numerals indicate the same elements. It is understood that when an element such as a layer, film, region or substrate is "on" another element, it can be directly on the other element or the intervening element can also be present. In contrast, when an element is referred to as being "directly on" another element, there is no intervening element.
應瞭解為達成本發明之目的，「中之至少一種」應解釋為意謂對應語言後之列舉元件的任何組合，包括多個列舉元件之組合。舉例而言，「X、Y或Z中之至少一種」應解釋為意謂僅X、僅Y、僅Z、或兩個或兩個以上項目X、Y及Z的任何組合(例如XYZ、XZ、YZ)。 It is to be understood that in order to achieve the invention, "at least one of" is to be construed as meaning any combination of the enumerated elements in the meaning of the corresponding language. For example, "at least one of X, Y, or Z" should be interpreted to mean only X, only Y, only Z, or any combination of two or more items X, Y, and Z (eg, XYZ, XZ) , YZ).
接著，將描述根據本發明例示性具體實例之蝕刻劑。 Next, an etchant according to an exemplary embodiment of the present invention will be described.
舉例而言，蝕刻劑用於蝕刻由鈦(Ti)形成之金屬線路或包括鈦之金屬膜及銅(Cu)或包括銅之金屬膜形成於鈦(Ti)或包括鈦之金屬膜上的雙膜。 For example, an etchant is used to etch a metal line formed of titanium (Ti) or a metal film including titanium and copper (Cu) or a metal film including copper formed on titanium (Ti) or a metal film including titanium membrane.
蝕刻劑可包括過硫酸鹽、氟化合物、無機酸、環胺化合物、氯化合物、銅鹽、有機酸或有機酸鹽及剩餘量水。 The etchant may include a persulfate, a fluorine compound, a mineral acid, a cyclic amine compound, a chlorine compound, a copper salt, an organic acid or an organic acid salt, and a remaining amount of water.
過硫酸鹽為蝕刻銅或包括銅之金屬膜的主要組分，且 意欲過硫酸鹽之含量以蝕刻劑之總含量計為約5 wt%至約20 wt%。若過硫酸鹽之含量低於約0.5 wt%，則銅或包括銅之金屬膜不能恰當地蝕刻或蝕刻速度極慢；另一方面，在含量超過約20 wt%的情況下，因為蝕刻速度完全增加，所以難以控制蝕刻製程。 Persulfate is the main component of etching copper or a metal film including copper, and The persulfate content is intended to be from about 5 wt% to about 20 wt%, based on the total of the etchant. If the content of persulfate is less than about 0.5 wt%, copper or a metal film including copper may not be properly etched or the etching rate is extremely slow; on the other hand, in the case where the content exceeds about 20 wt%, since the etching rate is completely Increased, so it is difficult to control the etching process.
過硫酸鹽可為過硫酸鉀(K2S2O8)、過硫酸鈉(Na2S2O8)或過硫酸銨((NH4)2S2O8)中之至少一種物質。 The persulfate may be at least one of potassium persulfate (K 2 S 2 O 8 ), sodium persulfate (Na 2 S 2 O 8 ) or ammonium persulfate ((NH 4 ) 2 S 2 O 8 ).
氟化合物為蝕刻鈦或包括鈦之金屬膜的主要組分，且用以移除在蝕刻期間可能產生之殘餘砂。意欲氟化合物之含量以蝕刻劑之總含量計為約0.01 wt%至約2 wt%。若氟化合物之含量低於約0.01 wt%，則因為鈦或包括鈦之金屬膜的蝕刻速度降低，所以可能產生殘餘砂；另一方面，若含量超過約20 wt%，則可能損壞諸如玻璃之上面形成金屬線路之基板以及與金屬線路一起形成之包括矽之絕緣層。 The fluorine compound is a main component of etching titanium or a metal film including titanium, and is used to remove residual sand which may be generated during etching. The content of the fluorine compound is desirably from about 0.01% by weight to about 2% by weight based on the total amount of the etchant. If the content of the fluorine compound is less than about 0.01% by weight, since the etching rate of titanium or a metal film including titanium is lowered, residual sand may be generated; on the other hand, if the content exceeds about 20% by weight, damage such as glass may be caused. A substrate on which a metal line is formed and an insulating layer including tantalum formed together with the metal line.
氟化合物可為氟離子或多原子氟離子解離在溶液中的化合物，且可為氟化銨、氟化鈉、氟化鉀、二氟化銨、二氟化鈉或二氟化鉀中之至少一種物質。 The fluorine compound may be a compound in which a fluoride ion or a polyatomic fluoride ion is dissociated in a solution, and may be at least at least ammonium fluoride, sodium fluoride, potassium fluoride, ammonium difluoride, sodium difluoride or potassium difluoride. a substance.
無機酸為用於蝕刻銅或包括銅及鈦之金屬膜或包括鈦之金屬膜的輔助氧化劑，且意欲該酸之含量以蝕刻劑之總含量計為約1 wt%至約10 wt%。在無機酸含量低於約1 wt%的情況下，因為銅或包括銅及鈦之金屬膜或包括鈦之金屬膜的蝕刻速度可能降低，所以蝕刻輪廓可能不佳且可能產生殘餘砂；另一方面，若含量超過約10 wt%，則因為可能產生過度蝕刻及光阻裂痕，所以線路可能因藥物溶液之滲 透而短路。 The inorganic acid is an auxiliary oxidizing agent for etching copper or a metal film including copper and titanium or a metal film including titanium, and it is intended that the acid content is from about 1 wt% to about 10 wt% based on the total content of the etchant. In the case where the inorganic acid content is less than about 1% by weight, since the etching speed of copper or a metal film including copper and titanium or a metal film including titanium may be lowered, the etching profile may be poor and residual sand may be generated; On the other hand, if the content exceeds about 10 wt%, the circuit may be infiltrated by the drug solution because excessive etching and photoresist cracking may occur. Short circuit.
無機酸可為硝酸、硫酸、磷酸或過氯酸中之至少一種物質。 The inorganic acid may be at least one of nitric acid, sulfuric acid, phosphoric acid or perchloric acid.
環胺化合物係為控制銅或包括銅之金屬膜的蝕刻速度而提供。意欲環胺化合物之含量以蝕刻劑之總含量計為約0.5 wt%至約5 wt%。在環胺化合物之含量低於約0.5 wt%的情況下，因為不可能控制銅的蝕刻速度，所以可能出現過度蝕刻。另一方面，在含量超過約5 wt%的情況下，因為銅之蝕刻速度可能降低而延長製程中之蝕刻時間，所以可能存在關於生產力方面之問題。 The cyclic amine compound is provided for controlling the etching rate of copper or a metal film including copper. The content of the cyclic amine compound is desirably from about 0.5% by weight to about 5% by weight based on the total amount of the etchant. In the case where the content of the cyclic amine compound is less than about 0.5% by weight, since etching speed of copper is impossible to control, over etching may occur. On the other hand, in the case where the content exceeds about 5 wt%, since the etching speed of copper may be lowered to extend the etching time in the process, there may be problems regarding productivity.
環胺化合物可為5-胺基四唑、咪唑、吲哚、嘌呤、吡唑、吡啶、嘧啶、吡咯、吡咯啶或吡咯啉中之至少一種物質。 The cyclic amine compound may be at least one of 5-aminotetrazole, imidazole, hydrazine, hydrazine, pyrazole, pyridine, pyrimidine, pyrrole, pyrrolidine or pyrroline.
氯化合物為用於蝕刻銅或包括銅之金屬膜的輔助氧化劑，且為控制錐角(taper angle)而提供。意欲氯化合物之含量以蝕刻劑之總含量計為約0.1 wt%至約5 wt%。在氯化合物之含量低於約0.1 wt%的情況下，因為銅或包括銅之金屬膜的蝕刻速度降低，所以蝕刻輪廓不佳；另一方面，若含量超過約5 wt%，則因為出現過度蝕刻，所以金屬線路可能移除掉。 The chlorine compound is an auxiliary oxidant for etching copper or a metal film including copper, and is provided for controlling a taper angle. The content of the chlorine compound is desirably from about 0.1% by weight to about 5% by weight based on the total amount of the etchant. In the case where the content of the chlorine compound is less than about 0.1% by weight, since the etching rate of copper or a metal film including copper is lowered, the etching profile is poor; on the other hand, if the content exceeds about 5 wt%, excessive Etched, so the metal lines may be removed.
氯化合物意謂可解離成氯離子之化合物，且可為氫氯酸(HCl)、氯化鈉(NaCl)、氯化鉀(KCl)或氯化銨(NH4Cl)中之至少一種物質。 The chlorine compound means a compound which can be dissociated into a chloride ion, and can be at least one of hydrochloric acid (HCl), sodium chloride (NaCl), potassium chloride (KCl) or ammonium chloride (NH 4 Cl).
銅鹽係為控制CD偏移(CD skew)而提供，且意欲銅 鹽之含量以蝕刻劑之總含量計為約0.05 wt%至約3 wt%。在銅鹽含量低於約0.05 wt%之情況下，各數目經處理薄片之CD偏移變化之偏差較大；另一方面，若含量超過約3 wt%，則因為主要氧化劑之氧化能力降低，所以經處理薄片之數目減少。 Copper salts are provided to control CD skew and are intended for copper The salt content is from about 0.05% by weight to about 3% by weight based on the total amount of the etchant. In the case where the copper salt content is less than about 0.05% by weight, the variation in CD shift of each number of treated sheets is large; on the other hand, if the content exceeds about 3 wt%, since the oxidation ability of the main oxidizing agent is lowered, Therefore, the number of treated sheets is reduced.
銅鹽可為硝酸銅(Cu(NO3)2)、硫酸銅(CuSO4)或磷酸銨銅(NH4CuPO4)中之至少一種物質。 The copper salt may be at least one of copper nitrate (Cu(NO 3 ) 2 ), copper sulfate (CuSO 4 ) or copper ammonium phosphate (NH 4 CuPO 4 ).
有機酸或有機酸鹽係為增加經處理薄片之數目而提供，其藉由與蝕刻金屬離子之螯合功能來防止對蝕刻劑的影響。意欲有機酸或有機酸鹽之含量以蝕刻劑之總含量計為約0.1 wt%至約10 wt%。在有機酸或有機酸鹽之含量低於約0.1 wt%的情況下，不存在增加經處理薄片之數目的作用；且在含量超過約10 wt%的情況下，不存在另外增加經處理薄片之數目的作用。 Organic or organic acid salts are provided to increase the number of treated flakes, which prevent the effect on the etchant by chelation with the etched metal ions. The content of the organic acid or organic acid salt is intended to be from about 0.1% by weight to about 10% by weight based on the total amount of the etchant. In the case where the content of the organic acid or organic acid salt is less than about 0.1% by weight, there is no effect of increasing the number of treated sheets; and in the case where the content exceeds about 10% by weight, there is no additional increase in the treated sheet. The role of the number.
有機酸或有機酸鹽可為以下中之至少一種物質：乙酸、丁酸、檸檬酸、甲酸、葡萄糖酸、乙醇酸、丙二酸、草酸、戊酸、磺基苯甲酸、磺基丁二酸、磺基鄰苯二甲酸、水楊酸、磺基水楊酸、苯甲酸、乳酸、甘油酸、丁二酸、蘋果酸、酒石酸、異檸檬酸、丙烯酸、亞胺二乙酸及乙二胺四乙酸(EDTA)以及其鈉鹽、其鉀鹽或其銨鹽。 The organic acid or organic acid salt may be at least one of the following: acetic acid, butyric acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, valeric acid, sulfobenzoic acid, sulfosuccinic acid , sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, glyceric acid, succinic acid, malic acid, tartaric acid, isocitric acid, acrylic acid, imine diacetic acid and ethylenediamine Acetic acid (EDTA) and its sodium salt, its potassium salt or its ammonium salt.
舉例而言，水包含去離子水、用於半導體製程之水，且可使用約18 MΩ/cm或大於18 MΩ/cm之水。相對於蝕刻劑之總含量，水係以剩餘量包含於其中使銅-鈦蝕刻劑之總重量約為100 wt%。 For example, water contains deionized water, water for semiconductor processing, and water of about 18 MΩ/cm or greater than 18 MΩ/cm can be used. The water is included in the remaining amount relative to the total content of the etchant so that the total weight of the copper-titanium etchant is about 100 wt%.
另外，根據本發明例示性具體實例之蝕刻劑可進一步包括金屬離子阻斷劑及防腐蝕劑。 In addition, the etchant according to an exemplary embodiment of the present invention may further include a metal ion blocker and an anticorrosive agent.
藉由使用根據本發明例示性具體實例之蝕刻劑，可有效蝕刻由鈦形成之金屬線路或包括鈦之金屬膜及銅或包括銅之金屬膜形成於鈦或包括鈦之金屬膜上的雙膜。 By using an etchant according to an exemplary embodiment of the present invention, a metal line formed of titanium or a metal film including titanium and a metal film containing copper or copper can be effectively formed on a titanium or a double film including a metal film of titanium. .
另外，當製造平板顯示器，諸如液晶顯示器時以及當製造記憶體半導體顯示面板時，可使用根據本發明例示性具體實例之蝕刻劑。另外，甚至在製造包括由鈦形成之金屬線路或包括鈦之金屬膜及銅或包括銅之金屬膜形成於鈦或包括鈦之金屬膜上的雙膜之另一電子裝置中亦可使用該蝕刻劑。 In addition, an etchant according to an exemplary embodiment of the present invention may be used when manufacturing a flat panel display such as a liquid crystal display and when manufacturing a memory semiconductor display panel. In addition, the etching may be used even in another electronic device including a metal circuit formed of titanium or a metal film including titanium and a metal film of copper or copper formed on a metal film of titanium or a metal film including titanium. Agent.
接著，將在下文中描述藉由使用根據本發明例示性具體實例之蝕刻劑製造顯示裝置之方法。 Next, a method of manufacturing a display device by using an etchant according to an exemplary embodiment of the present invention will be described hereinafter.
圖1為說明用於根據本發明例示性具體實例之顯示裝置之薄膜電晶體陣列面板的佈局圖，且圖2為沿圖1之線II-II所獲得的橫截面圖。 1 is a layout view illustrating a thin film transistor array panel for a display device according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line II-II of FIG.
在用於根據本發明例示性具體實例之顯示裝置之薄膜電晶體陣列面板中，複數個包括閘極電極124之閘極線121形成於由諸如玻璃或塑膠之絕緣材料製備之基板110上，且其上面依次形成閘極絕緣層140、複數個半導體層154、複數個歐姆接觸層163及165、複數個資料線171及複數個集極175。 In a thin film transistor array panel for a display device according to an exemplary embodiment of the present invention, a plurality of gate lines 121 including gate electrodes 124 are formed on a substrate 110 made of an insulating material such as glass or plastic, and A gate insulating layer 140, a plurality of semiconductor layers 154, a plurality of ohmic contact layers 163 and 165, a plurality of data lines 171, and a plurality of collectors 175 are sequentially formed thereon.
閘極線121轉接閘極信號且可在水平方向上延伸，且閘極電極124突出在閘極線121上方。 The gate line 121 switches the gate signal and can extend in the horizontal direction, and the gate electrode 124 protrudes above the gate line 121.
舉例而言，閘極線121可由用鈦或包括鈦之金屬形成之下層124p及用銅或包括銅之金屬形成之上層124r形成。 For example, the gate line 121 may be formed of a lower layer 124p formed of titanium or a metal including titanium and an upper layer 124r formed of copper or a metal including copper.
資料線171轉接資料信號且可在垂直方向上延伸，且可與閘極線121交叉。各資料線171可包括複數個向閘極電極124延伸之源極173。集極175可與資料線171分離且面向基於閘極電極124之源極173。 The data line 171 transfers the data signal and can extend in the vertical direction and can intersect the gate line 121. Each data line 171 can include a plurality of sources 173 extending toward the gate electrode 124. The collector 175 can be separated from the data line 171 and face the source 173 based on the gate electrode 124.
舉例而言，資料線171、源極173及集極極175可由用鈦或包括鈦之金屬形成的下層171p、173p及175p以及用銅或包括銅之金屬形成的上層171r、173r及175r形成。 For example, the data line 171, the source 173, and the collector 175 may be formed of lower layers 171p, 173p, and 175p formed of titanium or a metal including titanium, and upper layers 171r, 173r, and 175r formed of copper or a metal including copper.
半導體層154可安置於閘極電極124上，且其上面之歐姆接觸層163及165僅安置於半導體層154與資料線171及集極175之間，以減少其間的接觸電阻。 The semiconductor layer 154 may be disposed on the gate electrode 124, and the ohmic contact layers 163 and 165 thereon are disposed only between the semiconductor layer 154 and the data line 171 and the collector 175 to reduce the contact resistance therebetween.
一個閘極電極124、一個源極173及一個集極175連同半導體層154形成一個薄膜電晶體，且該薄膜電晶體之通道形成於源極173與集極175之間的半導體層154上。 A gate electrode 124, a source 173 and a collector 175 form a thin film transistor together with the semiconductor layer 154, and a channel of the thin film transistor is formed on the semiconductor layer 154 between the source 173 and the collector 175.
由氮化矽及氧化矽製備之鈍化層180可形成於資料線171及集極175上。 A passivation layer 180 prepared of tantalum nitride and hafnium oxide may be formed on the data line 171 and the collector 175.
曝露集極175之接觸孔185可形成於鈍化層180上，且像素電極191可形成於鈍化層180上且經由接觸孔185連接至集極175。 A contact hole 185 exposing the collector 175 may be formed on the passivation layer 180, and the pixel electrode 191 may be formed on the passivation layer 180 and connected to the collector 175 via the contact hole 185.
接著，參考圖3、圖4、圖5、圖6、圖7及圖8以及圖2，將描述用於根據本發明例示性具體實例之顯示裝置之薄膜電晶體陣列面板的製造方法。 Next, referring to Figures 3, 4, 5, 6, 7, and 8 and 2, a method of fabricating a thin film transistor array panel for a display device according to an exemplary embodiment of the present invention will be described.
圖3、圖4、圖5、圖6、圖7及圖8為依次說明用於 根據本發明例示性具體實例之顯示裝置之薄膜電晶體陣列面板的製造方法之橫截面圖。 3, 4, 5, 6, 7, and 8 are sequentially used for A cross-sectional view of a method of fabricating a thin film transistor array panel of a display device according to an exemplary embodiment of the present invention.
首先，如圖3所示，包括由鈦或包括鈦之金屬形成的下部閘極金屬層124p及由銅或包括銅之金屬形成的上部閘極金屬層124r的閘極金屬層124形成於透明絕緣基板110上。 First, as shown in FIG. 3, a gate metal layer 124 including a lower gate metal layer 124p formed of titanium or a metal including titanium and an upper gate metal layer 124r formed of copper or a metal including copper is formed in transparent insulation. On the substrate 110.
隨後，如圖4所示，藉由使用根據例示性具體實例之蝕刻劑蝕刻閘極金屬層120形成閘極電極124，且閘極絕緣層140形成於包括閘極電極124之絕緣基板110的整個表面上。 Subsequently, as shown in FIG. 4, the gate electrode 124 is formed by etching the gate metal layer 120 using an etchant according to an exemplary embodiment, and the gate insulating layer 140 is formed over the entire insulating substrate 110 including the gate electrode 124. On the surface.
閘極電極124可包括由鈦或包括鈦之金屬形成的下層124p及由銅或包括銅之金屬形成的上層124r。 The gate electrode 124 may include a lower layer 124p formed of titanium or a metal including titanium and an upper layer 124r formed of copper or a metal including copper.
隨後，如圖5所示，舉例而言，非晶矽層150、摻雜有雜質之非晶矽層160及資料金屬層170依次堆疊在閘極絕緣層140上。本文中，資料金屬層170可包括由鈦或包括鈦之金屬形成的下部資料金屬層170p及由銅或包括銅之金屬形成的上部資料金屬層170r。 Subsequently, as shown in FIG. 5, for example, an amorphous germanium layer 150, an amorphous germanium layer 160 doped with impurities, and a data metal layer 170 are sequentially stacked on the gate insulating layer 140. Herein, the data metal layer 170 may include a lower data metal layer 170p formed of titanium or a metal including titanium and an upper data metal layer 170r formed of copper or a metal including copper.
隨後，如圖6及圖7所示，藉由使用根據例示性具體實例之蝕刻劑蝕刻資料金屬層170，且藉由蝕刻非晶矽層150及上面摻雜有雜質之非晶矽層160形成包括源極173之資料線171、集極175、歐姆接觸層163及165以及半導體層154。 Subsequently, as shown in FIG. 6 and FIG. 7, the material metal layer 170 is etched by using an etchant according to an exemplary embodiment, and is formed by etching the amorphous germanium layer 150 and the amorphous germanium layer 160 doped with impurities thereon. The data line 171 of the source 173, the collector 175, the ohmic contact layers 163 and 165, and the semiconductor layer 154 are included.
舉例而言，資料線171、源極173及集極175可包括由鈦或包括鈦之金屬形成的下層171p、173p及175p以及由 銅或包括銅之金屬形成的上層171r、173r及175r。 For example, the data line 171, the source 173, and the collector 175 may include lower layers 171p, 173p, and 175p formed of titanium or a metal including titanium, and Copper or upper layers 171r, 173r, and 175r formed of a metal including copper.
隨後，如圖8所示，在鈍化層180形成於包括資料線171、集極175及閘極絕緣層140之整個表面上(如圖2所示)之後，可形成曝露集極175之接觸孔185，且像素電極191可形成於鈍化層180上。 Subsequently, as shown in FIG. 8, after the passivation layer 180 is formed on the entire surface including the data line 171, the collector 175, and the gate insulating layer 140 (as shown in FIG. 2), the contact hole of the exposed collector 175 may be formed. 185, and the pixel electrode 191 may be formed on the passivation layer 180.
在下文中，將經由詳細的實驗性實施例描述根據本發明例示性具體實例之蝕刻劑的效能。 Hereinafter, the performance of an etchant according to an exemplary embodiment of the present invention will be described via detailed experimental examples.
如下表1中所描述，180 kg蝕刻劑包含約10 wt%過硫酸鈉、約0.5 wt%二氟化銨、約3 wt%硝酸、約1.5 wt% 5-胺基四唑、約1.5 wt%氯化鈉、約0.2 wt%硫酸銅、約3 wt%乙酸及水。 As described in Table 1 below, the 180 kg etchant comprises about 10 wt% sodium persulfate, about 0.5 wt% ammonium difluoride, about 3 wt% nitric acid, about 1.5 wt% 5-aminotetrazole, about 1.5 wt%. Sodium chloride, about 0.2 wt% copper sulfate, about 3 wt% acetic acid, and water.
如下表1中所描述，180 kg蝕刻劑包含約15 wt%過硫酸鈉、約0.5 wt%二氟化銨、約2 wt%硝酸、約2 wt% 5-胺基四唑、約1 wt%氯化鈉、約0.01 wt%硫酸銅、約5 wt%乙酸及水。 As described in Table 1 below, the 180 kg etchant comprises about 15 wt% sodium persulfate, about 0.5 wt% ammonium difluoride, about 2 wt% nitric acid, about 2 wt% 5-aminotetrazole, about 1 wt%. Sodium chloride, about 0.01 wt% copper sulfate, about 5 wt% acetic acid, and water.
如下表1中所描述，180 kg蝕刻劑包含約8 wt%過硫酸鈉、約0.5 wt%二氟化銨、約5 wt%硝酸、約2.5 wt% 5-胺基四唑、約1.2 wt%氯化鈉、約0.1 wt%硫酸銅、約5 wt%乙酸及水。 As described in Table 1 below, the 180 kg etchant comprises about 8 wt% sodium persulfate, about 0.5 wt% ammonium difluoride, about 5 wt% nitric acid, about 2.5 wt% 5-aminotetrazole, about 1.2 wt%. Sodium chloride, about 0.1 wt% copper sulfate, about 5 wt% acetic acid, and water.
如下表1中所描述，180 kg蝕刻劑包含約10 wt%過硫 酸鈉、約0.5 wt%二氟化銨、約3 wt%硝酸、約0.5 wt% 5-胺基四唑及水。 As described in Table 1 below, 180 kg of etchant contains about 10 wt% sulfur. Sodium, about 0.5 wt% ammonium difluoride, about 3 wt% nitric acid, about 0.5 wt% 5-aminotetrazole, and water.
如下表1中所描述，180 kg蝕刻劑包含約5 wt%過硫酸鈉、約0.3 wt%二氟化銨、約2 wt% 5-胺基四唑、約1 wt%氯化鈉、約0.01 wt%硫酸銅、約5 wt%乙酸及水。 As described in Table 1 below, the 180 kg etchant comprises about 5 wt% sodium persulfate, about 0.3 wt% ammonium difluoride, about 2 wt% 5-aminotetrazole, about 1 wt% sodium chloride, about 0.01. Wt% copper sulfate, about 5 wt% acetic acid and water.
如下表1中所描述，180 kg蝕刻劑包含約13 wt%過硫酸鈉、約0.3 wt%二氟化銨、約2 wt%硝酸、約2 wt% 5-胺基四唑、約0.01 wt%硫酸銅、約5 wt%乙酸及水。 As described in Table 1 below, the 180 kg etchant comprises about 13 wt% sodium persulfate, about 0.3 wt% ammonium difluoride, about 2 wt% nitric acid, about 2 wt% 5-aminotetrazole, about 0.01 wt%. Copper sulfate, about 5 wt% acetic acid, and water.
如下表1中所描述，180 kg蝕刻劑包含約10 wt%過硫酸鈉、約0.5 wt%二氟化銨、約3 wt%硝酸、約2 wt% 5-胺基四唑、約1.5 wt%氯化鈉、約5 wt%乙酸及水。 As described in Table 1 below, the 180 kg etchant comprises about 10 wt% sodium persulfate, about 0.5 wt% ammonium difluoride, about 3 wt% nitric acid, about 2 wt% 5-aminotetrazole, about 1.5 wt%. Sodium chloride, about 5 wt% acetic acid and water.
如下表1中所描述，180 kg蝕刻劑包含約10 wt%過硫酸鈉、約0.5 wt%二氟化銨、約3 wt%硝酸、約2.5 wt% 5-胺基四唑、約1.5 wt%氯化鈉、約0.2 wt%硫酸銅及水。 As described in Table 1 below, the 180 kg etchant comprises about 10 wt% sodium persulfate, about 0.5 wt% ammonium difluoride, about 3 wt% nitric acid, about 2.5 wt% 5-aminotetrazole, about 1.5 wt%. Sodium chloride, about 0.2 wt% copper sulfate and water.
SPS：過硫酸鈉 ABF：二氟化銨 SPS: sodium persulfate ABF: ammonium difluoride
ATZ：5-胺基四唑 AcOH：乙酸 ATZ: 5-aminotetrazole AcOH: acetic acid
藉助於實施例，藉由使用以下方法評估根據本發明之實施例1、實施例2及實施例3之蝕刻劑以及根據比較實施例1、比較實施例2、比較實施例3、比較實施例4及比較實施例5之蝕刻劑的蝕刻特性。 The etchant according to Example 1, Embodiment 2 and Example 3 according to the present invention and the comparative example 1, Comparative Example 2, Comparative Example 3, and Comparative Example 4 were evaluated by the following methods by using the following examples. And the etching characteristics of the etchant of Comparative Example 5.
SiNx層沈積於玻璃上，鈦膜沈積於SiNx層上，且銅膜沈積於鈦膜上。在銅膜上，藉由使用鑽石刀將上面光阻經預定形狀圖案化之基板切割成約550 mm×650 mm之尺寸以 製造樣本。 The SiNx layer is deposited on the glass, the titanium film is deposited on the SiNx layer, and the copper film is deposited on the titanium film. On the copper film, the substrate having the upper photoresist patterned by the predetermined shape is cut into a size of about 550 mm × 650 mm by using a diamond knife. Make samples.
藉助於實施例，將實施例1、實施例2及實施例3以及比較實施例1、比較實施例2、比較實施例3、比較實施例4及比較實施例5之蝕刻劑置放在噴霧型蝕刻測試設備中，且升高溫度至約25℃。其後，在溫度達到約30±0.1℃之後，進行蝕刻製程。以相對於總蝕刻時間之EPD計，過度蝕刻進行200%。將樣本置放其中，開始噴霧，樣本在蝕刻完成之後自其中取出且用去離子水洗滌，且藉由使用熱風乾燥裝置乾燥，且藉由使用光阻去除劑移除光阻。在洗滌及乾燥之後，藉由使用電子掃描顯微鏡評估蝕刻特性，且結果描述於表2中。 By way of example, the etchants of Example 1, Example 2 and Example 3 and Comparative Example 1, Comparative Example 2, Comparative Example 3, Comparative Example 4 and Comparative Example 5 were placed in a spray type. Etch the test equipment and raise the temperature to about 25 °C. Thereafter, after the temperature reached about 30 ± 0.1 ° C, an etching process was performed. Excessive etching was performed at 200% in terms of EPD relative to the total etching time. The sample was placed therein, the spraying was started, the sample was taken out therefrom after the etching was completed and washed with deionized water, and dried by using a hot air drying device, and the photoresist was removed by using a photoresist removing agent. After washing and drying, the etching characteristics were evaluated by using an electron scanning microscope, and the results are described in Table 2.
參考表2，在根據本發明之實施例1、實施例2及實施例3之蝕刻劑的情況下，具有約0.5至1 μm之單側(CD偏移)及約40至60°之錐角的蝕刻特性極佳。 Referring to Table 2, in the case of the etchants according to Embodiment 1, Embodiment 2 and Embodiment 3 of the present invention, there is a one side (CD offset) of about 0.5 to 1 μm and a taper angle of about 40 to 60°. The etching characteristics are excellent.
在根據比較實施例1、比較實施例2及比較實施例5之蝕刻劑的情況下，具有約1.5 μm之單側(CD偏移)及約30至60°之錐角的蝕刻特性較佳；且在根據比較實施例3及比較實施例4之蝕刻劑的情況下，蝕刻特性不佳。 In the case of the etchants according to Comparative Example 1, Comparative Example 2, and Comparative Example 5, The etching characteristics of one side (CD shift) of 1.5 μm and the taper angle of about 30 to 60° are preferable; and in the case of the etchant according to Comparative Example 3 and Comparative Example 4, the etching characteristics are not good.
藉由使用以下方法評估具有較佳蝕刻特性之根據本發明實施例1之蝕刻劑以及根據比較實施例1、比較實施例2、比較實施例3、比較實施例4及比較實施例5之蝕刻劑的儲存特性。 An etchant according to Example 1 of the present invention having preferred etching characteristics and an etchant according to Comparative Example 1, Comparative Example 2, Comparative Example 3, Comparative Example 4, and Comparative Example 5 were evaluated by using the following method. Storage characteristics.
製造足夠多量之實施例1、比較實施例1及比較實施例5之蝕刻劑，在進行參考蝕刻之後剩餘蝕刻劑儲存在約10℃下，在相同條件下每日再次進行蝕刻測試，進行測試的同時與參考測試結果相比，且結果描述於表3中。 A sufficient amount of the etchant of Example 1, Comparative Example 1 and Comparative Example 5 was fabricated, and after the reference etching was performed, the remaining etchant was stored at about 10 ° C, and the etching test was again performed every day under the same conditions, and the test was performed. It is also compared with the reference test results, and the results are described in Table 3.
◎：極佳(相對於參考之改變量在10%內) ◎: Excellent (within 10% change from the reference)
×：不佳(相對於參考之改變量超過10%) ×: Poor (more than 10% change from the reference)
參考表3，在根據本發明之實施例1之蝕刻劑的情況 下，即使時間流逝，儲存特性仍極佳；在根據比較實施例1之蝕刻劑的情況下，儲存特性在4天之後不佳；且在根據比較實施例5之蝕刻劑的情況下，儲存特性在3天之後不佳。 Referring to Table 3, in the case of the etchant according to Example 1 of the present invention Under the lapse of time, the storage characteristics were excellent; in the case of the etchant according to Comparative Example 1, the storage characteristics were not good after 4 days; and in the case of the etchant according to Comparative Example 5, the storage characteristics were obtained. Not good after 3 days.
藉由使用以下方法評估具有較佳蝕刻特性之根據本發明實施例1之蝕刻劑以及根據比較實施例1、比較實施例2、比較實施例3及比較實施例4之蝕刻劑的經處理薄片之數目。 The etchant according to Example 1 of the present invention having preferred etching characteristics and the treated sheet of the etchant according to Comparative Example 1, Comparative Example 2, Comparative Example 3, and Comparative Example 4 were evaluated by using the following method. number.
藉由使用實施例1、比較實施例1及比較實施例4之蝕刻劑進行參考蝕刻，且藉由以約1,000 ppm之量添加銅粉進行完全溶解。接著，再次進行蝕刻測試，且在相對於參考之側蝕之改變量超過參考約10%的情況下，薄片之數目評估為不佳。結果描述在表4中。 The reference etching was performed by using the etchants of Example 1, Comparative Example 1, and Comparative Example 4, and completely dissolved by adding copper powder in an amount of about 1,000 ppm. Next, the etching test was performed again, and in the case where the amount of change in the side etching with respect to the reference exceeded the reference by about 10%, the number of sheets was evaluated as poor. The results are described in Table 4.
◎：極佳(當薄片數目隨時間改變時，相對於參考之改變量為10%或小於10%) ◎: Excellent (when the number of sheets changes with time, the amount of change relative to the reference is 10% or less)
×：不佳(當薄片數目隨時間改變時，相對於參考之改變量為10%或大於10%) ×: Poor (when the number of sheets changes with time, the amount of change with respect to the reference is 10% or more)
參考表4，在根據本發明實施例1之蝕刻劑的情況下， 不管銅粉量如何，薄片數目均極佳；但在根據比較實施例1之蝕刻劑的情況下，當銅粉量為約2000 ppm或大於2000 ppm時，薄片數目不佳；且在根據比較實施例4之蝕刻劑的情況下，當銅粉量為約2000 ppm及3000 ppm時，薄片數目不佳。 Referring to Table 4, in the case of the etchant according to Embodiment 1 of the present invention, Regardless of the amount of copper powder, the number of sheets was excellent; however, in the case of the etchant according to Comparative Example 1, when the amount of copper powder was about 2000 ppm or more, the number of sheets was poor; and In the case of the etchant of Example 4, when the amount of copper powder was about 2000 ppm and 3000 ppm, the number of sheets was not good.
如上文所述，可見根據本發明實施例1、實施例2及實施例3之蝕刻劑具有優良的蝕刻特性、優良的儲存特性及優良的經處理薄片數目特性，而根據比較實施例1、比較實施例2、比較實施例3、比較實施例4及比較實施例5之不包括無機酸、氯化合物、銅鹽及有機酸之蝕刻劑，具有差的蝕刻特性、差的儲存特性及差的經處理薄片數目特性。 As described above, it can be seen that the etchants according to the first embodiment, the second embodiment, and the third embodiment of the present invention have excellent etching characteristics, excellent storage characteristics, and excellent number of processed sheets, and are compared according to Comparative Example 1. Example 2, Comparative Example 3, Comparative Example 4, and Comparative Example 5 do not include an inorganic acid, a chlorine compound, a copper salt, and an organic acid etchant, and have poor etching characteristics, poor storage characteristics, and poor The number of sheets is processed.
熟習此項技術者將顯而易見，在不偏離本發明之精神或範疇的情況下，可在本發明中進行各種修改及變化。因此，假定本發明之修改及變化在隨附申請專利範圍及其相等物之範疇內，意欲本發明涵蓋該等修改及變化。 It will be apparent to those skilled in the art that various modifications and changes can be made in the present invention without departing from the spirit and scope of the invention. Therefore, it is intended that the present invention cover the modifications and variations thereof
圖1為根據本發明例示性具體實例之薄膜電晶體陣列面板的佈局圖。 1 is a layout view of a thin film transistor array panel according to an exemplary embodiment of the present invention.
圖2為沿圖1之線II-II所獲得的橫截面圖。 Figure 2 is a cross-sectional view taken along line II-II of Figure 1.
圖3、圖4、圖5、圖6、圖7及圖8為依次說明用於根據本發明例示性具體實例之顯示裝置之薄膜電晶體陣列面板的製造方法之橫截面圖。 3, 4, 5, 6, 7, and 8 are cross-sectional views sequentially illustrating a method of fabricating a thin film transistor array panel for a display device according to an exemplary embodiment of the present invention.
121‧‧‧閘極線 121‧‧‧ gate line
124‧‧‧閘極電極 124‧‧‧gate electrode
171‧‧‧資料線 171‧‧‧Information line
173‧‧‧源極 173‧‧‧ source
175‧‧‧集極 175‧‧ ‧ Collector
185‧‧‧接觸孔 185‧‧‧Contact hole
191‧‧‧像素電極 191‧‧‧pixel electrode
Claims (18)
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| TW101131993A TW201410917A (en) | 2012-09-03 | 2012-09-03 | Echtant and method for manufacturing display device using the same |
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| TW101131993A TW201410917A (en) | 2012-09-03 | 2012-09-03 | Echtant and method for manufacturing display device using the same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108934126A (en) * | 2017-05-22 | 2018-12-04 | Mec股份有限公司 | The forming method of etching solution, bulking liquor and thin copper film |
| TWI655275B (en) * | 2015-02-16 | 2019-04-01 | 南韓商東友精細化工有限公司 | Etchant composition and method of forming transparent electrode using same |
| TWI662157B (en) * | 2014-04-28 | 2019-06-11 | 南韓商東友精細化工有限公司 | Etchant and method of manufacturing display device using the same |
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2012
- 2012-09-03 TW TW101131993A patent/TW201410917A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI662157B (en) * | 2014-04-28 | 2019-06-11 | 南韓商東友精細化工有限公司 | Etchant and method of manufacturing display device using the same |
| TWI655275B (en) * | 2015-02-16 | 2019-04-01 | 南韓商東友精細化工有限公司 | Etchant composition and method of forming transparent electrode using same |
| CN108934126A (en) * | 2017-05-22 | 2018-12-04 | Mec股份有限公司 | The forming method of etching solution, bulking liquor and thin copper film |
| CN108934126B (en) * | 2017-05-22 | 2021-12-28 | Mec股份有限公司 | Etching solution, replenishment solution, and method for forming copper wiring |
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