TW201409456A - Liquid crystal element, liquid crystal display - Google Patents
Liquid crystal element, liquid crystal display Download PDFInfo
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- TW201409456A TW201409456A TW102129677A TW102129677A TW201409456A TW 201409456 A TW201409456 A TW 201409456A TW 102129677 A TW102129677 A TW 102129677A TW 102129677 A TW102129677 A TW 102129677A TW 201409456 A TW201409456 A TW 201409456A
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1396—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the liquid crystal being selectively controlled between a twisted state and a non-twisted state, e.g. TN-LC cell
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Abstract
Description
本發明有關液晶元件和液晶顯示裝置中的光電特性的改良技術。 The present invention relates to an improved technique for photoelectric characteristics in a liquid crystal element and a liquid crystal display device.
在日本特開2011-203547號公報(專利文獻1)中,公開了利用兩種配向狀態間轉變的新穎的液晶顯示元件(反向TN型液晶元件)。有關該習知的液晶顯示元件具有進行了配向處理的第1基板、第2基板以及配置於該等基板之間並進行扭轉配向的液晶層,液晶層中含有旋光性材料。並且,在液晶層中不含有旋光性材料的情況下將液晶分子扭轉的旋轉方向設為第1旋轉方向時,旋光性材料向液晶分子賦予朝與第1旋轉方向相反的第2旋轉方向的旋轉性。此外,第1基板和第2基板配向處理成分別顯現20°以上45°以下的預傾角。在第1基板和第2基板上,設置有能夠在液晶層的層厚方向和與其垂直的方向上分別產生電場的電極。根據上述結構,能夠得到具有可維持顯示狀態的記憶性、且可得到高對比度比的顯示品質優異的液晶顯示元件。 A novel liquid crystal display element (reverse TN type liquid crystal element) that utilizes transition between two alignment states is disclosed in Japanese Laid-Open Patent Publication No. 2011-203547 (Patent Document 1). The liquid crystal display device of the prior art has a first substrate, a second substrate, and a liquid crystal layer disposed between the substrates and subjected to a torsional alignment, and the liquid crystal layer contains an optically active material. In the case where the liquid crystal layer does not contain the optically active material, when the rotation direction in which the liquid crystal molecules are twisted is the first rotation direction, the optically active material imparts a rotation to the liquid crystal molecules in the second rotation direction opposite to the first rotation direction. Sex. Further, the first substrate and the second substrate are aligned so as to exhibit a pretilt angle of 20° or more and 45° or less, respectively. An electrode capable of generating an electric field in a layer thickness direction of the liquid crystal layer and a direction perpendicular thereto is provided on the first substrate and the second substrate. According to the above configuration, it is possible to obtain a liquid crystal display element having excellent memory quality while maintaining the memory property in the display state and obtaining a high contrast ratio.
但是,上述習知的液晶顯示元件在以下方面還有改良的餘地,即在使液晶層的液晶分子的配向狀態從向第2旋轉方向扭轉的狀態轉變為向第1旋轉方向扭轉的狀態時所需的時間較長。特別在需要比較短時間地進行顯示的寫入和消除的多個用途(例如鐘錶的顯示部、車輛用資訊顯示面板等)方面期望改良這點。 However, the above-described conventional liquid crystal display device has room for improvement in that the alignment state of the liquid crystal molecules of the liquid crystal layer is changed from the state of being twisted in the second rotation direction to the state of being twisted in the first rotation direction. It takes a long time. In particular, it is desired to improve this in many applications (for example, a display unit of a timepiece, a vehicle information display panel, etc.) in which writing and erasing of display are required to be performed in a relatively short period of time.
【專利文獻1】日本特開2011-203547號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-203547
本發明的具體方式的目的之一在於提供一種能夠減少利用兩種配向狀態間的轉變的液晶元件以及使用該液晶元件的液晶顯示裝置中的液晶層的狀態轉變所需的時間的技術。 An object of a specific aspect of the present invention is to provide a technique capable of reducing a time required for a state transition of a liquid crystal element using a transition between two alignment states and a liquid crystal layer in a liquid crystal display device using the liquid crystal element.
本發明的一個方式的液晶元件的特徵在於,該液晶元件包含:(a)相對配置的第1基板以及第2基板,它們各自的一個面被實施了配向處理;(b)液晶層,其設置在第1基板的一個面與第2基板的一個面之間;(c)用於向液晶層施加與第1基板以及第2基板的各一個面大致垂直方向的第1電場和與該各一個面大致平行方向的第2電場的電極;以及(d)驅動電路,其向電極供給驅動電壓,(e)第1基板和第2基板的配向處理的方向被設定成使液晶層的液晶分子產生朝第1方向扭轉的第1配向狀態,(f)液晶層含有產生第2配向狀態的性質的旋光性材料,第2配向狀態是液晶分子朝向與第1方向相反的第2方向扭轉的狀態,(g)從驅動電路供給的驅動電壓至少在經由電極向液晶層施加第1電場後施加第2電場,(h)液晶層藉由被施加第1電場和第2電場從第1配向狀態轉變為第2配向狀態。 In a liquid crystal element according to an aspect of the present invention, the liquid crystal element includes: (a) a first substrate and a second substrate disposed opposite to each other, wherein one surface of each of the liquid crystal elements is subjected to alignment processing; and (b) a liquid crystal layer is disposed. Between one surface of the first substrate and one surface of the second substrate; (c) applying a first electric field to the liquid crystal layer substantially perpendicular to each of the first substrate and the second substrate, and each of the first electric field An electrode of a second electric field having a substantially parallel direction; and (d) a driving circuit for supplying a driving voltage to the electrode; (e) a direction of alignment processing of the first substrate and the second substrate is set to generate liquid crystal molecules of the liquid crystal layer In the first alignment state that is twisted in the first direction, (f) the liquid crystal layer contains an optically active material that has a property of the second alignment state, and the second alignment state is a state in which the liquid crystal molecules are twisted in the second direction opposite to the first direction. (g) the driving voltage supplied from the driving circuit applies a second electric field at least after applying the first electric field to the liquid crystal layer via the electrode, and (h) the liquid crystal layer is changed from the first alignment state to the first alignment state by the application of the first electric field and the second electric field. The second alignment state.
根據上述結構,能夠藉由組合兩種電場並施加液晶層,減少從第1配向狀態向第2配向狀態的轉變所需的時間。 According to the above configuration, it is possible to reduce the time required for the transition from the first alignment state to the second alignment state by combining the two electric fields and applying the liquid crystal layer.
在上述液晶元件中,可以在施加第1電場後接著施加第2電場。 In the liquid crystal element described above, a second electric field may be applied after the application of the first electric field.
由此,能夠在藉由第1電場產生的配向狀態的轉變開始返回到原來前施加第2電場。 Thereby, the second electric field can be applied before returning to the original state by the transition of the alignment state by the first electric field.
在上述液晶元件中,還較佳施加第1電場的期間與施加第2電場的期間至少一部分重合。此時,重合的期間能夠設為例如3秒以上。 In the liquid crystal element described above, it is preferable that at least a portion of the period during which the first electric field is applied and the period during which the second electric field is applied overlap. In this case, the period of overlap can be set to, for example, 3 seconds or longer.
由此,在重合期間中,同時施加第1電場和第2電場,從而能夠進一步減少配向狀態的轉變所需的時間。 Thereby, the first electric field and the second electric field are simultaneously applied during the overlap period, and the time required for the transition of the alignment state can be further reduced.
本發明的一個方式的液晶顯示裝置具備多個像素部,該多個像素部分別用上述本發明的液晶元件構成。 A liquid crystal display device according to an aspect of the present invention includes a plurality of pixel portions each composed of the liquid crystal element of the present invention described above.
根據上述結構,能夠藉由利用液晶元件的兩種配向狀態的雙穩定性(記憶性),得到除了顯示重寫時以外基本不需要功率、並且減少了液晶層的配向狀態的轉變所需的時間(即減少了顯示切換時間)的液晶顯示裝置。 According to the above configuration, it is possible to obtain the time required for the transition of the alignment state of the liquid crystal layer, which is substantially unnecessary in addition to the display rewriting, by utilizing the bistable (memory) of the two alignment states of the liquid crystal element. (ie, the display switching time is reduced).
1‧‧‧上側基板 1‧‧‧Upper substrate
2‧‧‧下側基板 2‧‧‧lower substrate
3‧‧‧液晶層 3‧‧‧Liquid layer
51‧‧‧第1基板 51‧‧‧1st substrate
52‧‧‧第1電極 52‧‧‧1st electrode
53、57‧‧‧配向膜 53, 57‧‧‧ alignment film
54‧‧‧第2基板 54‧‧‧2nd substrate
55‧‧‧第2電極 55‧‧‧2nd electrode
56‧‧‧絕緣膜 56‧‧‧Insulation film
58‧‧‧第3電極 58‧‧‧3rd electrode
59‧‧‧第4電極 59‧‧‧4th electrode
60‧‧‧液晶層 60‧‧‧Liquid layer
65‧‧‧驅動電路 65‧‧‧Drive circuit
71、72、73‧‧‧驅動器 71, 72, 73‧‧‧ drive
74‧‧‧像素部 74‧‧‧Pixel Department
A1~An、B1~Bm、C1~Cn、D1~Dn‧‧‧控制線 A1~An, B1~Bm, C1~Cn, D1~Dn‧‧‧ control lines
第1圖是示意地示出反向TN型液晶元件的動作的示意圖;第2圖是用於說明從反向扭轉狀態向延展扭轉(Spray Twist)狀態轉變時液晶層的配向狀態與電場方向的關係的概念圖; 第3圖是示出反向TN型液晶元件的結構例的剖面圖;第4圖(A)是以俯視圖表示第1~第4電極的配置的示意圖,第4圖(B)~第4圖(D)是以剖面表示第1~第4電極的配置的示意圖;第5圖(A)~第5圖(C)是示出在將液晶元件的液晶層設為反向扭轉狀態後施加縱向電場時的顯微鏡觀察像的圖,又,第5圖(D)是示出用於該觀察的液晶元件的摩擦方向以及偏光板的透過軸的方向的圖;第6圖是示出使得產生暫時的配向狀態的轉變的縱向電場的大小與穿透率之間的關係的圖;第7圖(A)和第7圖(B)是用於說明從驅動電路供給的驅動電壓的波形圖;第8圖是示出使用驅動電壓驅動實施例的液晶元件時穿透率之經時變化的圖;第9圖(A)~第9圖(C)是示出實施例的液晶元件的顯微鏡觀察像的圖,第9圖(D)是示出偏光板的透過軸以及摩擦方向的圖;第10圖(A)~第10圖(D)是示出比較例的液晶元件的顯微鏡觀察像的圖,第10圖(E)是示出偏光板的透過軸以及摩擦方向的圖;第11圖是示出驅動電壓的頻率與轉變時間之間的關係的圖;以及第12圖是示意性示出液晶顯示裝置的結構例的圖。 Fig. 1 is a schematic view schematically showing an operation of a reverse TN type liquid crystal element; Fig. 2 is a view for explaining an alignment state and an electric field direction of a liquid crystal layer when transitioning from a reverse twist state to a stretch Twist state Conceptual diagram of the relationship; 3 is a cross-sectional view showing a configuration example of a reverse TN type liquid crystal element, and FIG. 4(A) is a schematic view showing the arrangement of the first to fourth electrodes in a plan view, and FIG. 4(B) to FIG. (D) is a schematic view showing the arrangement of the first to fourth electrodes in a cross section; and FIGS. 5(A) to 5(C) are diagrams showing the application of the longitudinal direction after the liquid crystal layer of the liquid crystal element is in a reverse twist state. Fig. 5(D) is a view showing the rubbing direction of the liquid crystal element used for the observation and the direction of the transmission axis of the polarizing plate, and Fig. 6 is a view showing the temporary generation of the image. A diagram showing the relationship between the magnitude of the longitudinal electric field and the transmittance of the transition of the alignment state; FIGS. 7(A) and 7(B) are waveform diagrams for explaining the driving voltage supplied from the driving circuit; 8 is a view showing temporal changes in transmittance when the liquid crystal element of the embodiment is driven using a driving voltage; and FIGS. 9(A) to 9(C) are microscopic observation images showing the liquid crystal element of the embodiment. FIG. 9(D) is a view showing a transmission axis and a rubbing direction of a polarizing plate; FIGS. 10(A) to 10(D) are microscopic observations showing a liquid crystal element of a comparative example. FIG. 10(E) is a view showing a transmission axis and a rubbing direction of a polarizing plate; FIG. 11 is a view showing a relationship between a frequency of a driving voltage and a transition time; and FIG. 12 is a schematic view A diagram showing a configuration example of a liquid crystal display device.
以下,參照附圖說明本發明的實施方式。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第1圖是示意地示出反向TN型液晶元件的動作的示意圖。在反向TN型液晶元件中,作為基本結構,具備相對配置的上側基板1和下側基板2以及設置於它們之間的液晶層3。上側基板1與下側基板2各自的表面被實施了摩擦處理等配向處理。以它們的配向處理的方向(在圖中用箭頭表示)按照90°左右的角度彼此交叉的方式,相對地配置上側基板1與下側基板2。藉由向上側基板1與下側基板2之間注入向列型液晶材料來形成液晶層3。該液晶層3採用了添加有旋光性材料的液晶材料,該旋光性材料產生使液晶分子在其方位角方向上朝向特定的方向(在第1圖的例子中為右旋轉方向)扭轉的作用。這樣的反向TN型液晶元件藉由旋光性材料的作用而在 初始狀態下成為液晶層3在延展配向的同時進行扭轉的延展扭轉狀態。當在其層厚方向上對該延展扭轉狀態的液晶層3施加超過飽和電壓的電壓時,液晶分子轉變為朝向左旋轉方向扭轉的反向扭轉狀態(均勻扭轉(Uniform Twist)狀態)。在這種反向扭轉狀態的液晶層3中,主體中的液晶分子傾斜,所以表現出降低液晶元件的驅動電壓的效果。 Fig. 1 is a schematic view schematically showing the operation of a reverse TN type liquid crystal element. In the reverse TN type liquid crystal element, as the basic structure, the upper substrate 1 and the lower substrate 2 which are opposed to each other and the liquid crystal layer 3 provided therebetween are provided. The surfaces of the upper substrate 1 and the lower substrate 2 are subjected to alignment processing such as rubbing treatment. The upper substrate 1 and the lower substrate 2 are opposed to each other in such a manner that their alignment processing (indicated by arrows in the drawing) intersects each other at an angle of about 90 degrees. The liquid crystal layer 3 is formed by injecting a nematic liquid crystal material between the upper substrate 1 and the lower substrate 2. The liquid crystal layer 3 employs a liquid crystal material to which an optically active material is added, and this optically active material acts to twist the liquid crystal molecules in a specific direction in the azimuthal direction (the right direction of rotation in the example of Fig. 1). Such a reverse TN type liquid crystal cell is acted upon by an optically active material In the initial state, the liquid crystal layer 3 is twisted and twisted while being extended in alignment. When a voltage exceeding the saturation voltage is applied to the liquid crystal layer 3 in the twisted state in the layer thickness direction, the liquid crystal molecules are converted into a reverse twist state (uniform twist state) which is twisted in the left rotation direction. In the liquid crystal layer 3 in the reverse twist state, the liquid crystal molecules in the main body are inclined, so that the effect of lowering the driving voltage of the liquid crystal element is exhibited.
第2圖是用於說明從反向扭轉狀態向延展扭轉(Spray Twist)狀態轉變時液晶層的配向狀態與電場方向的關係的概念圖。如第2圖(A)所示,針對相對於基板面處於水準方向的電場(Electric field),將電場的施加方向設定為:使其與反向扭轉狀態下的液晶層的層厚方向的大致中央的液晶分子(圖中為附有圖樣的液晶分子)的長軸方向儘量不平行,而是成為垂直或接近垂直的狀態。由此,液晶層的層厚方向之大致中央的液晶分子沿著電場方向重新進行配向,所以如第2圖(B)所示,液晶層的配向狀態從反向扭轉狀態轉變至延展扭轉狀態。此外,當對反向扭轉狀態的液晶層施加了電場而使其成為與該層厚方向之大致中央的液晶分子的長軸方向平行或接***行的狀態時,難以產生從反向扭轉狀態向延展扭轉狀態的轉變。這是因為,在液晶層的層厚方向的大致中央,幾乎不會因電場而產生液晶分子的重新配向。根據以上情況,為了在反向TN型液晶元件中在兩種配向狀態之間自如地轉變,基本上需要產生與液晶層的層厚方向相應的電場(縱向電場)和與其垂直的方向的電場(橫向電場),而且對於橫向電場而言,較佳成為與反向扭轉狀態的液晶層的層厚方向之大致中央的液晶分子的長軸方向大致垂直或者接近於垂直的方向。關於具備用於自如地施加這些縱向電場和橫向電場的電極構造的反向TN型液晶元件,以下舉出具體例子進行說明。 Fig. 2 is a conceptual diagram for explaining the relationship between the alignment state of the liquid crystal layer and the direction of the electric field when the transition from the reverse twist state to the transition Twist state. As shown in FIG. 2(A), the electric field is applied in an electric field in the horizontal direction with respect to the substrate surface so as to be approximately the same as the layer thickness direction of the liquid crystal layer in the reverse twist state. The long-axis directions of the central liquid crystal molecules (the liquid crystal molecules with patterns attached in the drawing) are as parallel as possible, but become vertical or nearly vertical. Thereby, the liquid crystal molecules in the substantially center of the thickness direction of the liquid crystal layer are realigned in the direction of the electric field. Therefore, as shown in FIG. 2(B), the alignment state of the liquid crystal layer changes from the reverse twist state to the extended twist state. Further, when an electric field is applied to the liquid crystal layer in the reverse twist state so as to be parallel or nearly parallel to the long-axis direction of the liquid crystal molecules substantially at the center of the layer thickness direction, it is difficult to generate the state from the reverse twist state to the extension. A change in the state of twisting. This is because, in the substantially center of the thickness direction of the liquid crystal layer, realignment of liquid crystal molecules is hardly caused by an electric field. According to the above, in order to freely change between the two alignment states in the reverse TN type liquid crystal element, it is basically necessary to generate an electric field (longitudinal electric field) corresponding to the layer thickness direction of the liquid crystal layer and an electric field in a direction perpendicular thereto ( The transverse electric field) is preferably substantially perpendicular or perpendicular to the longitudinal direction of the liquid crystal molecules substantially at the center of the layer thickness direction of the liquid crystal layer in the reverse twist state. A reverse TN type liquid crystal element having an electrode structure for applying these longitudinal electric field and transverse electric field freely will be described below with reference to specific examples.
第3圖是示出反向TN型液晶元件的結構例的剖面圖。第3圖所示的液晶元件具有在第1基板(上側基板)51與第2基板(下側基板)54之間夾設有液晶層60的基本結構,並且具有用於向液晶層60供給驅動電壓的驅動部65。下面進一步詳細說明液晶元件的構造。另外,對於密封液晶層60周圍的密封材料等部件省略圖示和說明。 Fig. 3 is a cross-sectional view showing a configuration example of a reverse TN type liquid crystal element. The liquid crystal element shown in FIG. 3 has a basic structure in which a liquid crystal layer 60 is interposed between a first substrate (upper substrate) 51 and a second substrate (lower substrate) 54, and has a structure for supplying driving to the liquid crystal layer 60. Voltage drive unit 65. The configuration of the liquid crystal element will be described in further detail below. In addition, illustration and description of components such as a sealing material surrounding the liquid crystal layer 60 are omitted.
第1基板51和第2基板54分別是例如玻璃基板、塑膠基板等透明基板。如圖所示,第1基板51和第2基板54彼此的一個面相對,以預定間 隙(例如幾μm)貼合起來。另外,雖然省略了特別的圖示,然而也可以在任意一個基板上形成薄膜電晶體等開關元件。 Each of the first substrate 51 and the second substrate 54 is a transparent substrate such as a glass substrate or a plastic substrate. As shown in the figure, one surface of the first substrate 51 and the second substrate 54 are opposed to each other in a predetermined space. The gap (for example, a few μm) is attached. Further, although a special illustration is omitted, a switching element such as a thin film transistor may be formed on any one of the substrates.
第1電極52設置於第1基板51的一面側。此外,第2電極55設置於第2基板54的一面側。第1電極52和第2電極55分別藉由對例如氧化銦錫(ITO)等透明導電膜進行適當圖形化來構成。 The first electrode 52 is provided on one surface side of the first substrate 51. Further, the second electrode 55 is provided on one surface side of the second substrate 54. Each of the first electrode 52 and the second electrode 55 is formed by appropriately patterning a transparent conductive film such as indium tin oxide (ITO).
絕緣膜(絕緣層)56以覆蓋第2電極55的方式設置在第2基板54上。該絕緣膜56例如是二氧化矽膜、氮化矽膜、氮氧化矽膜或它們的層疊膜等無機絕緣膜,或者有機絕緣膜(例如丙烯類有機絕緣膜)。 The insulating film (insulating layer) 56 is provided on the second substrate 54 so as to cover the second electrode 55. The insulating film 56 is, for example, an inorganic insulating film such as a ceria film, a tantalum nitride film, a hafnium oxynitride film or a laminated film thereof, or an organic insulating film (for example, an acryl-based organic insulating film).
第3電極58、第4電極59分別設置在第2基板54上的上述絕緣膜56上。本實施方式的第3電極58和第4電極59是分別具有多個電極支的梳齒狀電極,配置為各電極支交替排列(參照後述的第4圖)。第3電極58和第4電極59分別藉由對例如氧化銦錫(ITO)等透明導電膜進行適當圖形化來構成。第3電極58、第4電極59各自的電極支例如電極寬度為20~30μm左右,電極間隔為20~200μm左右。 The third electrode 58 and the fourth electrode 59 are provided on the insulating film 56 on the second substrate 54, respectively. The third electrode 58 and the fourth electrode 59 of the present embodiment are comb-shaped electrodes each having a plurality of electrode branches, and are arranged such that the electrode branches are alternately arranged (see FIG. 4 to be described later). Each of the third electrode 58 and the fourth electrode 59 is formed by appropriately patterning a transparent conductive film such as indium tin oxide (ITO). The electrode branch of each of the third electrode 58 and the fourth electrode 59 has, for example, an electrode width of about 20 to 30 μm and an electrode spacing of about 20 to 200 μm.
配向膜53以覆蓋第1電極52的方式設置於第1基板51的一面側。此外,配向膜57以覆蓋第3電極58和第4電極59的方式設置於第2基板54的一面側。對各配向膜53、57實施預定的配向處理(例如摩擦處理)。藉由各配向膜53、57在與液晶層60的介面處賦予液晶層60的液晶分子的預傾角比較高,例如為20°以上。 The alignment film 53 is provided on one surface side of the first substrate 51 so as to cover the first electrode 52. Further, the alignment film 57 is provided on one surface side of the second substrate 54 so as to cover the third electrode 58 and the fourth electrode 59. A predetermined alignment treatment (for example, a rubbing treatment) is performed on each of the alignment films 53 and 57. The pretilt angle of the liquid crystal molecules imparted to the liquid crystal layer 60 at the interface with the liquid crystal layer 60 by the respective alignment films 53 and 57 is relatively high, for example, 20° or more.
液晶層60設置於第1基板51和第2基板54彼此之間。構成液晶層60的液晶材料的介電常數各向異性Δε為正(Δε>0)。在該液晶材料中添加了用於使液晶分子扭轉配向的旋光性材料。 The liquid crystal layer 60 is provided between the first substrate 51 and the second substrate 54. The dielectric constant anisotropy Δ ε of the liquid crystal material constituting the liquid crystal layer 60 is positive (Δε>0). An optically active material for twisting and aligning liquid crystal molecules is added to the liquid crystal material.
驅動電路65與第1電極53、第2電極56、第3電極58以及第4電極59連接,向這些電極供給驅動電壓。 The drive circuit 65 is connected to the first electrode 53, the second electrode 56, the third electrode 58, and the fourth electrode 59, and supplies a drive voltage to these electrodes.
第4圖(A)是以俯視圖表示第1~第4電極的配置的示意圖。第4圖(B)~第4圖(D)是以剖面表示第1~第4電極的配置的示意圖。參照這些圖說明使用各電極對液晶層施加的電場。 Fig. 4(A) is a schematic view showing the arrangement of the first to fourth electrodes in a plan view. 4(B) to 4(D) are schematic views showing the arrangement of the first to fourth electrodes in a cross section. The electric field applied to the liquid crystal layer using each electrode will be described with reference to these figures.
如第4圖(A)所示,第1電極52與第2電極55彼此相對配置,在兩者重疊的區域內配置有第3電極58和第4電極59。此外,第3電極58的多個電極支和第4電極59的多個電極支以逐個交替重複的方式配置。 As shown in FIG. 4(A), the first electrode 52 and the second electrode 55 are disposed to face each other, and the third electrode 58 and the fourth electrode 59 are disposed in a region where the two are overlapped. Further, the plurality of electrode branches of the third electrode 58 and the plurality of electrode branches of the fourth electrode 59 are arranged alternately one by one.
如第4圖(B)所示,能夠藉由由驅動電路65對第1電極52與第2電極55之間施加電壓,在兩個電極之間產生電場。這種情況下的電場如圖所示成為沿著第1基板51和第2基板54的厚度方向(單元厚度方向)的電場、即“縱向電場(第1電場)”。 As shown in FIG. 4(B), an electric field can be generated between the two electrodes by applying a voltage between the first electrode 52 and the second electrode 55 by the drive circuit 65. The electric field in this case is an electric field along the thickness direction (unit thickness direction) of the first substrate 51 and the second substrate 54, that is, "longitudinal electric field (first electric field)".
此外,如第4圖(C)所示,能夠藉由由驅動電路65對第3電極58與第4電極59之間施加電壓,在兩個電極之間產生電場。這種情況下的電場如圖所示為與第1基板51和第2基板54的各一個面大致平行的方向的電場、即“橫向電場(第2電場)”。此後有時將使用這種電場的模式稱作“IPS模式”。 Further, as shown in FIG. 4(C), an electric field can be generated between the two electrodes by applying a voltage between the third electrode 58 and the fourth electrode 59 by the drive circuit 65. The electric field in this case is an electric field in a direction substantially parallel to one surface of each of the first substrate 51 and the second substrate 54, that is, a "transverse electric field (second electric field)". Hereinafter, a mode in which such an electric field is used is sometimes referred to as an "IPS mode."
此外,如第4圖(D)所示,能夠藉由由驅動電路65向隔著絕緣膜56相對配置的第2電極55與第3電極58以及第4電極59之間施加電壓,由此在兩個電極之間產生電場。這種情況下的電場如圖所示成為沿著與第1基板51和第2基板54之各一個面大致平行的方向的電場、即“橫向電場)第2電場)”。此後有時將使用這種電場的模式稱作“FFS模式”。 Further, as shown in FIG. 4(D), a voltage can be applied between the second electrode 55 and the third electrode 58 and the fourth electrode 59 which are opposed to each other via the insulating film 56 by the drive circuit 65. An electric field is generated between the two electrodes. The electric field in this case is an electric field in a direction substantially parallel to one surface of each of the first substrate 51 and the second substrate 54, that is, a "transverse electric field" second electric field)". Hereinafter, a mode in which such an electric field is used is sometimes referred to as "FFS mode".
本實施方式的液晶元件在初始狀態下將液晶層60的液晶分子配向為延展扭轉狀態。與此相對,在如上述那樣使用第1電極52和第2電極55產生縱向電場時,液晶層60的液晶分子的配向狀態轉變為反向扭轉狀態。此後,若使用第3電極58和第4電極59產生橫向電場(IPS模式),則液晶層60的配向狀態轉變為延展扭轉狀態。此外,在使用第2電極55、第3電極58、第4電極59產生橫向電場的情況下(FFS模式),液晶層60的配向狀態也同樣從反向扭轉狀態轉變到延展扭轉狀態。與IPS模式進行比較,處於FFS模式能使液晶層60的配向狀態更為均勻地轉變的趨勢。認為這是由於對第3電極58、第4電極59的各電極上也施加了橫向電場。因此可以說基於開口率(穿透率、對比度比)的觀點FFS模式更合適。 In the liquid crystal element of the present embodiment, the liquid crystal molecules of the liquid crystal layer 60 are aligned in an extended twist state in an initial state. On the other hand, when the longitudinal electric field is generated by using the first electrode 52 and the second electrode 55 as described above, the alignment state of the liquid crystal molecules of the liquid crystal layer 60 is changed to the reverse twist state. Thereafter, when the third electric field 58 and the fourth electrode 59 are used to generate a transverse electric field (IPS mode), the alignment state of the liquid crystal layer 60 is changed to the extended twist state. Further, when the transverse electric field is generated by the second electrode 55, the third electrode 58, and the fourth electrode 59 (FFS mode), the alignment state of the liquid crystal layer 60 also changes from the reverse twist state to the extended twist state. Compared with the IPS mode, the FFS mode tends to make the alignment state of the liquid crystal layer 60 more uniformly. This is considered to be because a transverse electric field is also applied to each of the electrodes of the third electrode 58 and the fourth electrode 59. Therefore, it can be said that the FFS mode is more suitable based on the viewpoint of the aperture ratio (transmission ratio, contrast ratio).
關於液晶層60的配向狀態能夠在延展扭轉狀態與反向扭轉狀態之間切換的理由研究如下。在延展扭轉狀態下,液晶層60的層厚方向之大致中央處的液晶分子配向為大致水平,但在由於縱向電場而成為反向扭轉狀態後,層厚方向之大致中央處的液晶分子配向為接近垂直的狀態。此後,藉由IPS模式或FFS模式的橫向電場對反向扭轉狀態的液晶層60的層厚方向之大致中央處的液晶分子施加橫向電場,由於處於延展扭轉狀態的液晶層 60之該大致中央處的液晶分子朝向應有的指向箭頭方向,因此再次轉變到作為初始狀態的延展扭轉狀態。藉由以上敍述,可認為有效應用了縱向電場和橫向電場來切換延展扭轉狀態和反向扭轉狀態。 The reason why the alignment state of the liquid crystal layer 60 can be switched between the extended twist state and the reverse twist state is as follows. In the extended twist state, the alignment of the liquid crystal molecules at the substantially center of the layer thickness direction of the liquid crystal layer 60 is substantially horizontal, but after the reverse twist state due to the longitudinal electric field, the alignment of the liquid crystal molecules at the approximate center of the layer thickness direction is Near vertical. Thereafter, a transverse electric field is applied to the liquid crystal molecules at substantially the center of the layer thickness direction of the liquid crystal layer 60 in the reverse twist state by the transverse electric field of the IPS mode or the FFS mode, due to the liquid crystal layer in the extended twist state. The liquid crystal molecules at the substantially central portion of the 60 are oriented in the direction of the pointing arrow, and thus are again shifted to the extended twist state as the initial state. From the above description, it can be considered that the longitudinal electric field and the transverse electric field are effectively applied to switch between the extended twist state and the reverse twist state.
接著詳細說明液晶元件的實施例。 Next, an embodiment of a liquid crystal element will be described in detail.
藉由對帶ITO膜的玻璃基板的ITO膜進行圖形化,製作具有第1電極52的第1基板51。這裏可以藉由通常的光微影技術進行ITO膜的圖形化。作為ITO蝕刻方法,使用濕蝕刻(氯化鐵)。此處的第1電極52的形狀圖形會在取出電極部分和相當於顯示像素的部分殘留ITO膜。同樣地,藉由對帶ITO膜的玻璃基板的ITO膜進行圖形化,製作具有第2電極55的第2基板54。 The first substrate 51 having the first electrode 52 was produced by patterning an ITO film of a glass substrate with an ITO film. Here, the ITO film can be patterned by ordinary photolithography. As the ITO etching method, wet etching (ferric chloride) is used. Here, the shape pattern of the first electrode 52 leaves an ITO film on the electrode portion and the portion corresponding to the display pixel. Similarly, the second substrate 54 having the second electrode 55 was produced by patterning the ITO film of the glass substrate with an ITO film.
然後在第2基板54的第2電極55上形成絕緣膜56。此時,需要採取在取出電極部分不形成絕緣膜56的措施。作為該方法,可舉出預先在取出電極部分形成抗蝕劑並在絕緣膜56形成後提離的方法、在藉由金屬遮罩等隱藏了取出電極部分的狀態下藉由濺鍍法等形成絕緣膜56的方法等。此外,作為絕緣膜56可舉出有機絕緣膜、二氧化矽膜或氮化矽膜等無機絕緣膜以及它們的組合等。這裏使用丙烯類有機絕緣膜和二氧化矽膜(SiO2膜)的層疊膜作為絕緣膜56。 Then, an insulating film 56 is formed on the second electrode 55 of the second substrate 54. At this time, it is necessary to take measures for not forming the insulating film 56 at the electrode portion. In this method, a method of forming a resist in the electrode portion and forming the insulating film 56, and then removing the electrode portion by a metal mask or the like is formed by sputtering or the like. The method of insulating film 56 and the like. Further, examples of the insulating film 56 include an organic insulating film, an inorganic insulating film such as a hafnium oxide film or a tantalum nitride film, a combination thereof, and the like. Here, a laminated film of a propylene-based organic insulating film and a ceria film (SiO 2 film) is used as the insulating film 56.
在取出電極部分(端子部分)貼附耐熱性的薄膜(聚醯亞胺帶),在該狀態下旋塗有機絕緣膜的材料液。例如在以2000rpm旋轉30秒的條件下,獲得膜厚1μm。對其進行潔淨烘烤使其燒結(例如220℃、1小時)。在貼附有耐熱性薄膜的情況下藉由濺鍍法(交流放電)形成SiO2膜。例如將基板加熱至80℃,形成1000埃。這裏,當剝離了耐熱性薄膜時,能夠將有機絕緣膜、SiO2膜一併良好剝離。此後進行潔淨烘烤使其燒結(例如220℃、1小時)。這是為了提高SiO2膜的絕緣性和透明性。雖然未必有形成SiO2膜的必要性,然而藉由形成該膜能提高在其上形成的ITO膜的緊密貼合性和圖形化性能,因此最好來進行形成。還能提高絕緣性。另一方面,雖然也可以考慮不形成有機絕緣膜而僅由SiO2膜來獲取絕緣性的方法,然而此時SiO2膜易於變為多孔質,因而較佳確保4000埃~8000埃左右的膜厚。此外,還可以為與SiNx構成的層疊膜。另外,作為無機絕緣膜的形成方法敍述的是濺鍍法,然而也可以使用真空蒸鍍法、離子束法、CVD法(化學 氣相沉積法)等形成方法。 A heat-resistant film (polyimine tape) is attached to the electrode portion (terminal portion), and the material liquid of the organic insulating film is spin-coated in this state. For example, a film thickness of 1 μm was obtained under the conditions of rotation at 2000 rpm for 30 seconds. It is clean baked and sintered (for example, 220 ° C, 1 hour). When a heat resistant film is attached, a SiO 2 film is formed by a sputtering method (alternating discharge). For example, the substrate is heated to 80 ° C to form 1000 angstroms. Here, when the heat resistant film is peeled off, the organic insulating film and the SiO 2 film can be uniformly peeled off together. Thereafter, it is subjected to clean baking to be sintered (for example, 220 ° C for 1 hour). This is to improve the insulation and transparency of the SiO 2 film. Although the necessity of forming the SiO 2 film is not necessarily required, the formation of the film can improve the adhesion and patterning properties of the ITO film formed thereon, and therefore it is preferable to form it. It also improves insulation. On the other hand, a method in which the insulating property is obtained only by the SiO 2 film without forming an organic insulating film is also conceivable. However, in this case, the SiO 2 film tends to be porous, so that it is preferable to secure a film of about 4000 angstroms to 8,000 angstroms. thick. Further, it may be a laminated film composed of SiNx. Further, as a method of forming the inorganic insulating film, a sputtering method is described. However, a method such as a vacuum deposition method, an ion beam method, or a CVD method (chemical vapor deposition method) may be used.
然後,在絕緣膜56上形成第3電極58和第4電極59。具體而言,首先藉由濺鍍法(交流放電)在絕緣膜56上形成ITO膜。例如將基板加熱至100℃,在整個表面形成大約1200埃左右的ITO膜。藉由通常的光微影技術對該ITO膜進行圖形化。作為此時的光罩,使用具有與上述第4圖所示之梳齒狀電極對應的遮光部分的遮罩。作為梳齒狀的電極,例如能夠設電極支的寬度為20μm~30μm、電極間隔20μm~200μm。另外,若上述取出電極部分不存在圖形則藉由蝕刻一併除去下側的ITO膜,因此使用在取出電極部分也形成有圖形的光罩。 Then, the third electrode 58 and the fourth electrode 59 are formed on the insulating film 56. Specifically, an ITO film is first formed on the insulating film 56 by a sputtering method (alternating current discharge). For example, the substrate is heated to 100 ° C, and an ITO film of about 1200 angstroms is formed on the entire surface. The ITO film is patterned by a conventional photolithography technique. As the mask at this time, a mask having a light shielding portion corresponding to the comb-shaped electrode shown in Fig. 4 is used. As the comb-shaped electrode, for example, the width of the electrode branch can be set to 20 μm to 30 μm, and the electrode interval can be 20 μm to 200 μm. Further, when the extraction electrode portion does not have a pattern, the lower ITO film is removed by etching, and therefore, a mask having a pattern formed on the extraction electrode portion is used.
清洗如上製作出的第1基板51和第2基板54。具體而言,首先進行水洗(刷洗或沖洗、純水清洗),在水乾後進行UV清洗,最後進行IR乾燥。 The first substrate 51 and the second substrate 54 produced as described above are cleaned. Specifically, first, water washing (brushing or rinsing, pure water washing) is performed, UV drying is performed after the water is dried, and IR drying is finally performed.
接著在第1基板51、第2基板54上分別形成配向膜53、57。作為配向膜53、57,例如使用將通常用作垂直配向膜的材料的側鏈密度降低後的聚醯亞胺膜。將配向膜的材料液(配向材料)塗覆於第1基板51、第2基板54的各自的一個面上,藉由潔淨烘烤對其進行燒結(例如160~260℃、1小時)。作為配向膜的材料液的塗佈方法,可使用柔性印刷、噴墨印刷或旋塗。這裏使用的是旋塗,而使用其他方式結果也相同。配向膜53、57的膜厚例如為500~800埃。接著對各配向膜53、57進行作為配向處理的摩擦處理。將摩擦時的推入量例如設定為0.8mm。由此,各配向膜53、57相對于液晶分子可顯現20°~60°左右的預傾角。關於摩擦方向,設定為初始狀態(延展扭轉狀態)下的扭轉角φ為例如70°。 Next, alignment films 53 and 57 are formed on the first substrate 51 and the second substrate 54, respectively. As the alignment films 53 and 57, for example, a polyimide film having a reduced side chain density of a material which is generally used as a vertical alignment film is used. The material liquid (alignment material) of the alignment film is applied to one surface of each of the first substrate 51 and the second substrate 54, and is sintered by a clean baking (for example, 160 to 260 ° C for 1 hour). As a coating method of the material liquid of the alignment film, flexographic printing, inkjet printing, or spin coating can be used. Spin coating is used here, and the results are the same in other ways. The film thickness of the alignment films 53, 57 is, for example, 500 to 800 angstroms. Next, the respective alignment films 53 and 57 are subjected to a rubbing treatment as an alignment treatment. The amount of pushing at the time of rubbing is set to, for example, 0.8 mm. Thereby, each of the alignment films 53 and 57 can exhibit a pretilt angle of about 20 to 60 with respect to the liquid crystal molecules. Regarding the rubbing direction, the torsion angle φ in the initial state (extended twist state) is set to, for example, 70°.
接著將第1基板51與第2基板54貼合起來。用分配器在第1基板51上將密封材料塗覆為期望的圖形,該密封材料中混入有大致2wt%的粒徑大約4μm的柱狀玻璃間隔部件。此外,用乾式分佈法在第2基板54上分佈粒徑大約4μm的塑膠間隔部件。在貼合兩基板後,藉由熱壓接使密封材料固化。 Next, the first substrate 51 and the second substrate 54 are bonded together. The sealing material was applied to the first substrate 51 by a dispenser into a desired pattern in which approximately 2 wt% of a columnar glass spacer having a particle diameter of about 4 μm was mixed. Further, a plastic spacer having a particle diameter of about 4 μm is distributed on the second substrate 54 by a dry distribution method. After bonding the two substrates, the sealing material is cured by thermocompression bonding.
進而,藉由在第1基板51與第2基板54之間注入液晶材料來形成液晶層60。在液晶材料中添加例如CB15作為旋光性材料。旋光性材料的添加量被設定為使得d/p為0.25~0.53。 Further, the liquid crystal layer 60 is formed by injecting a liquid crystal material between the first substrate 51 and the second substrate 54. For example, CB15 is added to the liquid crystal material as an optically active material. The amount of the optically active material added is set such that d/p is 0.25 to 0.53.
最後,在第1基板51和第2基板54的各個外側貼合偏光板。偏光板 設為正交尼科耳配置。此處,以各偏光板的透過軸與摩擦方向成10°角度的方式配置偏光板。 Finally, a polarizing plate is bonded to each of the outer sides of the first substrate 51 and the second substrate 54. Polarizer Set to the crossed Nicols configuration. Here, the polarizing plate is disposed such that the transmission axis of each polarizing plate is at an angle of 10° to the rubbing direction.
藉由以上過程,實施例的液晶元件完成。該液晶元件在完成時刻將液晶層60配向成延展扭轉狀態。此時,成為穿透率(或反射率)比較高的明亮狀態的外觀。並且,在對液晶層60施加縱向電場時,液晶層60的配向轉變成反向扭轉狀態,即使在關閉電場後也維持該狀態。此時,成為穿透率(或反射率)比較低的較暗狀態的外觀。並且,在對液晶層60施加橫向電場時,液晶層60的配向再次轉變成延展扭轉狀態,即使在關閉電場後也維持該狀態。 By the above process, the liquid crystal element of the embodiment is completed. The liquid crystal element aligns the liquid crystal layer 60 in an extended twist state at the completion time. At this time, the appearance is a bright state in which the transmittance (or reflectance) is relatively high. Further, when a longitudinal electric field is applied to the liquid crystal layer 60, the alignment of the liquid crystal layer 60 is changed to a reverse twist state, and this state is maintained even after the electric field is turned off. At this time, the appearance is a dark state in which the transmittance (or reflectance) is relatively low. Further, when a transverse electric field is applied to the liquid crystal layer 60, the alignment of the liquid crystal layer 60 is again converted into an extended twist state, and this state is maintained even after the electric field is turned off.
接著詳細說明本實施方式的液晶元件的驅動方法。 Next, a method of driving the liquid crystal element of the present embodiment will be described in detail.
第5圖(A)~第5圖(C)是示出在將液晶元件的液晶層設為反向扭轉狀態後施加縱向電場時的顯微鏡觀察像的圖。此外,第5圖(D)是示出用於該觀察之液晶元件的摩擦方向以及偏光板的透過軸的方向的圖。如第5圖(D)所示,該液晶元件將各偏光板的透過軸分別設定為圖中沿順時針方向的45°方向和沿逆時針方向的45°方向,將第1基板51的摩擦方向RL設定為沿順時針方向的35°,第2基板54的摩擦方向RU設定為沿逆時針方向的35°。本申請的發明人研究後得到以下見解:在對第5圖(A)所示的反向扭轉狀態的液晶層施加縱向電場後關閉電場時,如第5圖(B)所示,液晶層的配向狀態從反向扭轉狀態暫時轉變為延展扭轉狀態,在幾秒後如第5圖(C)所示那樣開始再次返回到反向扭轉狀態。另外,這裏作為縱向電場,在對第1電極52與第2電極55之間施加2.5V的電壓後設為了0V。詳細觀察可知,從暫時的延展扭轉狀態向反向扭轉狀態的再次轉變以間隔部件(間隔材料)為起點開始產生。 FIGS. 5(A) to 5(C) are views showing a microscope observation image when a vertical electric field is applied after the liquid crystal layer of the liquid crystal element is in a reverse twist state. Further, Fig. 5(D) is a view showing the rubbing direction of the liquid crystal element used for the observation and the direction of the transmission axis of the polarizing plate. As shown in FIG. 5(D), the liquid crystal element sets the transmission axis of each polarizing plate to a 45° direction in the clockwise direction and a 45° direction in the counterclockwise direction, respectively, to rub the first substrate 51. The direction RL is set to 35° in the clockwise direction, and the rubbing direction RU of the second substrate 54 is set to 35° in the counterclockwise direction. The inventors of the present application obtained the following findings: when the electric field is turned off after applying a longitudinal electric field to the liquid crystal layer in the reverse twist state shown in FIG. 5(A), as shown in FIG. 5(B), the liquid crystal layer is The alignment state is temporarily changed from the reverse twist state to the extended twist state, and after a few seconds, as shown in FIG. 5(C), the return to the reverse twist state is started again. Further, here, as a vertical electric field, a voltage of 2.5 V is applied between the first electrode 52 and the second electrode 55, and is set to 0 V. As can be seen in detail, the transition from the temporary extended twist state to the reverse twist state is started with the spacer member (spacer material) as a starting point.
第6圖是示出使得產生暫時之配向狀態轉變的縱向電場的大小與穿透率之間的關係的圖。在第6圖中橫軸與經過時間對應,左側縱軸與從液晶元件的正面方向測量的穿透率對應,右側縱軸與縱向電場的大小(施加電壓)對應,實線表示穿透率,柱狀圖的柱表示施加電壓。在經過時間0~15秒的期間,液晶元件的液晶層處於初始狀態(延展扭轉狀態),此時的穿透率比較高。在經過時間15~30秒的期間,液晶元件的液晶層藉由施加縱向電場轉變成反向扭轉狀態,此時的穿透率比較低。在經過時間30~50秒的 期間,處於對液晶元件的液晶層沒有施加電壓的狀態,維持反向扭轉狀態,因此穿透率較低。在經過時間50秒之後以10秒間隔分別向液晶層施加10V(伏特)、9V、8V、7V、6V、5V、4V、3.5V、3V、2.5V、2V、1V的交流電壓。另外,施加的交流電壓的頻率是20Hz,施加的時間分別是大致1秒。如圖所示,可知在本實驗例中,在施加電壓2.5V~3.5V的情況下,電場關閉後,穿透率瞬間變大為與初始狀態同等程度,該穿透率上升的狀態大概維持3秒。但是,在施加電壓2V的條件和3.5V以上的條件下電場關閉後沒有出現穿透率急劇上升的現象。即,能夠得到以下見解:藉由向反向扭轉狀態的液晶層施加比較低的縱向電場,能夠瞬間轉變為延展扭轉狀態,而且該暫時的轉變所需的時間比較短。 Fig. 6 is a graph showing the relationship between the magnitude of the longitudinal electric field and the transmittance which cause the transition of the temporary alignment state. In Fig. 6, the horizontal axis corresponds to the elapsed time, the left vertical axis corresponds to the transmittance measured from the front direction of the liquid crystal element, and the right vertical axis corresponds to the magnitude of the longitudinal electric field (applied voltage), and the solid line indicates the transmittance. The bars of the histogram represent the applied voltage. During the elapse of time of 0 to 15 seconds, the liquid crystal layer of the liquid crystal element is in an initial state (extended torsion state), and the transmittance at this time is relatively high. During the elapse of time of 15 to 30 seconds, the liquid crystal layer of the liquid crystal element is converted into a reverse twist state by application of a longitudinal electric field, and the transmittance at this time is relatively low. After 30 to 50 seconds elapsed During this period, the voltage is not applied to the liquid crystal layer of the liquid crystal element, and the reverse twist state is maintained, so that the transmittance is low. An alternating voltage of 10 V (volts), 9 V, 8 V, 7 V, 6 V, 5 V, 4 V, 3.5 V, 3 V, 2.5 V, 2 V, 1 V was applied to the liquid crystal layer at intervals of 10 seconds after the elapse of time of 50 seconds. Further, the frequency of the applied alternating voltage was 20 Hz, and the applied time was approximately 1 second. As shown in the figure, in the present experimental example, when the applied voltage is 2.5 V to 3.5 V, the electric field is turned off, and the transmittance is instantaneously increased to the same level as the initial state, and the state in which the transmittance is increased is maintained. 3 seconds. However, there was no sharp increase in the transmittance after the electric field was turned off under the condition of applying a voltage of 2 V and a condition of 3.5 V or more. That is, it can be understood that by applying a relatively low longitudinal electric field to the liquid crystal layer in the reverse twist state, it is possible to instantaneously change to the extended twist state, and the time required for the temporary transition is relatively short.
本申請的發明人根據這種見解進行研究後得到以下構思:藉由在對反向扭轉狀態的液晶層施加縱向電場而使其暫時轉變為延展扭轉狀態後,進一步施加橫向電場,能夠使轉變為該延展扭轉狀態的狀態穩定,並且與不向反向扭轉狀態的液晶層施加縱向電場而施加橫向電場的情況相比,能夠縮短轉變到延展扭轉狀態所需的時間。接著詳細說明用於使該構思具體化的驅動方法。 Based on this finding, the inventors of the present application have obtained the idea that by applying a longitudinal electric field to the liquid crystal layer in the reverse twist state and temporarily transforming it into an extended twist state, a lateral electric field is further applied, and the conversion can be made into The state in which the twisted state is extended is stabilized, and the time required for transitioning to the extended twist state can be shortened as compared with the case where a vertical electric field is applied to the liquid crystal layer in the reverse twist state without applying a transverse electric field. Next, a driving method for embodying the concept will be described in detail.
第7圖(A)和第7圖(B)是用於說明從驅動電路供給的驅動電壓的波形圖。本實施方式的驅動電路65中存在V1、V2、V3的電壓輸出,均為矩形波。在使液晶元件60的液晶層的配向狀態從延展扭轉狀態轉變為反向扭轉狀態時,藉由驅動電路65對第1電極52與第2電極55之間施加電壓V1(縱向電場)。另一方面,在使液晶元件60的液晶層的配向狀態從反向扭轉狀態轉變為延展扭轉狀態時,藉由驅動電路65,首先對第1電極52與第2電極55之間施加電壓V2(縱向電場),接著對第3電極58與第4電極59之間施加電壓V3(橫向電場)。 7(A) and 7(B) are waveform diagrams for explaining a driving voltage supplied from a driving circuit. In the drive circuit 65 of the present embodiment, voltage outputs of V1, V2, and V3 are present, and both are rectangular waves. When the alignment state of the liquid crystal layer of the liquid crystal element 60 is changed from the extended twist state to the reverse twist state, the voltage V1 (longitudinal electric field) is applied between the first electrode 52 and the second electrode 55 by the drive circuit 65. On the other hand, when the alignment state of the liquid crystal layer of the liquid crystal element 60 is changed from the reverse twist state to the extended twist state, the voltage V2 is first applied between the first electrode 52 and the second electrode 55 by the drive circuit 65 ( The longitudinal electric field) is then applied with a voltage V3 (transverse electric field) between the third electrode 58 and the fourth electrode 59.
詳細地說,首先如第7圖(A)所示那樣在時間t1的期間內對第1電極52與第2電極55之間施加電壓V2。接著,如第7圖(B)所示,在從施加電壓V2起經過時間t2後,在時間t3的期間內對第3電極58與第4電極59之間施加電壓V3。此時,在將時間t2設定得比時間t1小的情況下,如圖示的例子那樣,電壓V2的施加期間與電壓V3的施加期間暫時重合。即,暫時向液晶層60同時施加縱向電場和橫向電場。另外,關於電壓V1 ~V3的任意一個,都能適當調整頻率和電壓的大小。在電壓V3大於電壓V1、V2的情況下,為了防止電壓V3作為雜訊混入到第1電極52和第2電極55,相比接地驅動,較佳為高阻抗驅動。 Specifically, first, as shown in FIG. 7(A), a voltage V2 is applied between the first electrode 52 and the second electrode 55 during the period of time t1. Next, as shown in FIG. 7(B), after a time t2 elapses from the application of the voltage V2, a voltage V3 is applied between the third electrode 58 and the fourth electrode 59 during the period of time t3. At this time, when the time t2 is set to be smaller than the time t1, as in the illustrated example, the application period of the voltage V2 and the application period of the voltage V3 temporarily overlap. That is, the longitudinal electric field and the transverse electric field are simultaneously applied to the liquid crystal layer 60 at the same time. In addition, regarding voltage V1 Any one of ~V3 can adjust the frequency and voltage appropriately. When the voltage V3 is larger than the voltages V1 and V2, in order to prevent the voltage V3 from being mixed into the first electrode 52 and the second electrode 55 as noise, it is preferable to drive at a higher impedance than the ground drive.
對使用這種驅動電壓時的詳細驅動條件進行研究可知,為了進一步縮短從反向扭轉狀態向延展扭轉狀態的轉變時間,較佳滿足t1>t2的條件。即,可知較佳存在同時施加縱向電場和橫向電場的期間。另外,也可以設為t1=t2,該情況下在電壓V2的施加後接著施加電壓V3。由此,在向液晶層60施加縱向電場後,接著施加橫向電場。此外,也可以設為t1<t2,該情況下在電壓V1的施加後隔著無電壓施加的期間施加電壓V2。由此,在向液晶層60施加縱向電場後,隔著電場0的期間施加橫向電場。該情況下,為了顯現更大的利用縱向電場和橫向電場的組合來提高回應性的效果,需要滿足t1+3(秒)≧t2的條件。關於與該時間t1相加的“3秒”,如上述第6圖所示,根據是在電場關閉後,穿透率瞬間變大為與初始狀態同等程度的狀態維持的時間大概是3秒。 As a result of examining the detailed driving conditions when such a driving voltage is used, it is understood that the condition of t1 > t2 is preferably satisfied in order to further shorten the transition time from the reverse twist state to the extended twist state. That is, it is understood that there is preferably a period in which a vertical electric field and a transverse electric field are simultaneously applied. Alternatively, t1=t2 may be used. In this case, voltage V3 is applied after the application of voltage V2. Thus, after a longitudinal electric field is applied to the liquid crystal layer 60, a transverse electric field is applied. Further, t1 < t2 may be used. In this case, the voltage V2 is applied during the period in which no voltage is applied after the application of the voltage V1. Thereby, after a vertical electric field is applied to the liquid crystal layer 60, a transverse electric field is applied while the electric field 0 is interposed. In this case, in order to exhibit a larger effect of utilizing the combination of the longitudinal electric field and the transverse electric field to improve the responsiveness, it is necessary to satisfy the condition of t1 + 3 (sec) ≧ t2. As for the "3 seconds" added to the time t1, as shown in the sixth drawing, the time during which the transmittance is instantaneously increased to the same level as the initial state after the electric field is turned off is approximately 3 seconds.
第8圖是示出使用上述驅動電壓驅動實施例的液晶元件時穿透率的經時變化的圖。此處,將驅動電壓設定為電壓V1=10V、電壓V2=2.5V、電壓V3=10V、時間t1=1.0秒、時間t2=0.5秒、時間t3=1.0秒,測量從反向扭轉狀態轉變成延展扭轉狀態時的穿透率的經時變化。此外,作為比較例,還測量了僅使用橫向電場時穿透率的經時變化。將此時的電壓V3設為10V。如圖所示,在僅施加橫向電場的比較例的液晶元件中,液晶層的配向狀態從反向扭轉狀態向延展扭轉狀態轉變,伴隨於此,到穿透率發生變化為止需要大約25秒,與此相對,在實施例的液晶元件中,該時間被大幅度縮短為大約6秒。 Fig. 8 is a view showing temporal changes in transmittance when the liquid crystal element of the embodiment is driven using the above-described driving voltage. Here, the driving voltage is set to voltage V1=10V, voltage V2=2.5V, voltage V3=10V, time t1=1.0 second, time t2=0.5 second, time t3=1.0 second, and the measurement is changed from the reverse twist state to The temporal change in the transmittance when the twisted state is extended. Further, as a comparative example, the temporal change of the transmittance when only the transverse electric field was used was also measured. The voltage V3 at this time was set to 10V. As shown in the figure, in the liquid crystal element of the comparative example in which only the transverse electric field is applied, the alignment state of the liquid crystal layer changes from the reverse twist state to the extended twist state, and accordingly, it takes about 25 seconds until the transmittance changes. On the other hand, in the liquid crystal element of the embodiment, the time was greatly shortened to about 6 seconds.
第9圖(A)~第9圖(C)是示出實施例的液晶元件的顯微鏡觀察像的圖,第9圖(D)是示出偏光板的透過軸以及摩擦方向的圖。在實施例的液晶元件中,如第9圖(A)所示,在向液晶層為反向扭轉狀態的液晶層供給了上述組合縱向電場和橫向電場而成的驅動電壓時,觀察到藉由縱向電場而瞬間轉變為延展扭轉狀態(第9圖(B)),之後,向延展扭轉狀態的轉變藉由橫向電場而呈穩定的情形(第9圖(C))。 9(A) to 9(C) are diagrams showing a microscope observation image of the liquid crystal element of the embodiment, and FIG. 9(D) is a view showing a transmission axis and a rubbing direction of the polarizing plate. In the liquid crystal element of the embodiment, as shown in FIG. 9(A), when the driving voltage of the combined longitudinal electric field and the transverse electric field is supplied to the liquid crystal layer in the reverse twist state of the liquid crystal layer, it is observed that The longitudinal electric field instantaneously changes to the extended twist state (Fig. 9(B)), and thereafter, the transition to the extended twist state is stabilized by the transverse electric field (Fig. 9(C)).
第10圖(A)~第10圖(D)是示出比較例的液晶元件的顯微鏡觀察 像的圖,第10圖(E)是示出偏光板的透過軸以及摩擦方向的圖。在比較例的液晶元件中,如第10圖(A)所示,在向液晶層為反向扭轉狀態的液晶層供給了橫向電場的驅動電壓時,觀察到在梳齒狀的第3電極和第4電極的電極支之間隨機產生轉變成延展扭轉狀態的區域(第10圖(B)),之後轉變成延展扭轉狀態的區域逐漸擴大(第10圖(C):經過5秒後),進而轉變成延展扭轉狀態的區域擴及整體的情形(第10圖(D):經過25秒後)。 10 (A) to 10 (D) are microscopic observations showing liquid crystal elements of a comparative example Fig. 10(E) is a view showing a transmission axis and a rubbing direction of the polarizing plate. In the liquid crystal element of the comparative example, as shown in FIG. 10(A), when a driving voltage of a transverse electric field is supplied to the liquid crystal layer in a reverse twist state in the liquid crystal layer, a third electrode in the comb shape is observed. A region which is transformed into a stretched torsion state is randomly generated between the electrode branches of the fourth electrode (Fig. 10(B)), and then the region which is transformed into the extended twist state is gradually enlarged (Fig. 10(C): after 5 seconds), Further, the region which is transformed into the extended twist state is expanded to the whole (Fig. 10(D): after 25 seconds have elapsed).
與上述實施例的液晶元件相比,在比較例中,從反向扭轉狀態向延展扭轉狀態轉變時的情形不同。即,在實施例中,藉由開始的縱向電場的施加大範圍產生轉變成延展扭轉狀態的區域,並藉由之後的橫向電場的施加維持這些區域。因此,外觀上美觀性良好。與此相對,在比較例中轉變成延展扭轉狀態的區域在電極支間局部產生後其區域擴大。因此,外觀上美觀性不佳。 Compared with the liquid crystal element of the above-described embodiment, in the comparative example, the case when transitioning from the reverse twist state to the extended twist state is different. That is, in the embodiment, the regions which are converted into the extended twist state are generated in a wide range by the application of the initial longitudinal electric field, and these regions are maintained by the application of the subsequent transverse electric field. Therefore, the appearance is good. On the other hand, in the comparative example, the region which was transformed into the expanded torsion state was enlarged after being locally generated between the electrode branches. Therefore, the appearance is not good.
第11圖是示出驅動電壓的頻率與轉變時間之間的關係的圖。分別在20Hz~100Hz間可變地設定電壓V2的頻率f2和電壓V3的頻率f3來測量對實施例的液晶元件供給驅動電壓時從反向扭轉狀態轉變成延展扭轉狀態的轉變時間。另外,將轉變時間設為到穿透率的變化飽和為止的時間。此外,關於頻率以外的條件,將電壓V2設定為2.5V和3.0V兩種,電壓V3在任意一個情況下均設定為10V,將時間t1設定為1.0秒,時間t2設定為0.5秒,時間t3設定為1.0秒。如圖所示,在頻率比較高的情況下,具體而言在50Hz~100Hz的情況下,幾乎觀察不到轉變時間T對頻率的依存性,但在頻率比較低的情況下,具體而言在20Hz~40Hz的情況下,能觀察到頻率越低轉變時間T越縮短的趨勢。 Fig. 11 is a graph showing the relationship between the frequency of the driving voltage and the transition time. The frequency f2 of the voltage V2 and the frequency f3 of the voltage V3 are variably set between 20 Hz and 100 Hz, respectively, to measure the transition time from the reverse twist state to the extended twist state when the driving voltage is supplied to the liquid crystal element of the embodiment. Further, the transition time is set to a time until the change in the transmittance is saturated. Further, regarding conditions other than the frequency, the voltage V2 is set to 2.5 V and 3.0 V, and the voltage V3 is set to 10 V in either case, the time t1 is set to 1.0 second, and the time t2 is set to 0.5 second, time t3. Set to 1.0 second. As shown in the figure, in the case where the frequency is relatively high, specifically, in the case of 50 Hz to 100 Hz, the dependence of the transition time T on the frequency is hardly observed, but in the case where the frequency is relatively low, specifically In the case of 20 Hz to 40 Hz, it can be observed that the lower the frequency, the shorter the transition time T is.
接著說明使用了上述液晶元件具有的記憶性能實現低功耗驅動的液晶顯示裝置的結構例。 Next, a configuration example of a liquid crystal display device which realizes low power consumption driving using the memory performance of the liquid crystal element described above will be described.
第12圖是示意性示出液晶顯示裝置之結構例的圖。第12圖所示的液晶顯示裝置是矩陣狀地排列多個像素部74而構成的單純矩陣型的液晶顯示裝置,作為各像素部74,可採用上述液晶元件。具體而言,液晶顯示裝置構成為包含:在X方向延伸的m根控制線B1~Bm;對這些控制線B1~Bm提供控制信號的驅動器71;分別與控制線B1~Bm交叉並在Y方向延 伸的n根控制線A1~An;對這些控制線A1~An提供控制信號的驅動器72;分別與控制線B1~Bm交叉並在Y方向延伸的n根控制線C1~Cn和D1~Dn;對這些控制線C1~Cn和D1~Dn提供控制信號的驅動器73;設置於控制線B1~Bm與控制線A1~An的各交點處的像素部74。 Fig. 12 is a view schematically showing a configuration example of a liquid crystal display device. The liquid crystal display device shown in FIG. 12 is a simple matrix liquid crystal display device in which a plurality of pixel portions 74 are arranged in a matrix, and the liquid crystal element can be used as each of the pixel portions 74. Specifically, the liquid crystal display device is configured to include m control lines B1 to Bm extending in the X direction, and drivers 71 for supplying control signals to the control lines B1 to Bm; respectively intersecting the control lines B1 to Bm in the Y direction Delay n control lines A1~An; drivers 72 for providing control signals to these control lines A1~An; n control lines C1~Cn and D1~Dn extending in the Y direction respectively with control lines B1~Bm; A driver 73 that supplies a control signal to these control lines C1 to Cn and D1 to Dn, and a pixel portion 74 that is provided at each intersection of the control lines B1 to Bm and the control lines A1 to An.
各控制線B1~Bm、A1~An、C1~Cn和D1~Dn例如由ITO等透明導電膜構成。控制線B1~Bm與A1~An交叉的部分作為上述第1電極52和第2電極55發揮作用(參照第4圖(B))。另外,控制線C1~Cn與設置於與各像素部74相當的區域中而作為第3電極58的梳齒狀的電極支(第12圖中省略了圖示)連接。同樣地,控制線D1~Dn與設置於與各像素部74相當的區域中而作為第4電極59的梳齒狀的電極支(第12圖中省略了圖示)連接。 Each of the control lines B1 to Bm, A1 to An, C1 to Cn, and D1 to Dn is made of, for example, a transparent conductive film such as ITO. A portion where the control lines B1 to Bm intersect with A1 to An functions as the first electrode 52 and the second electrode 55 (see FIG. 4(B)). In addition, the control lines C1 to Cn are connected to the comb-shaped electrode branch (not shown in FIG. 12) of the third electrode 58 in a region corresponding to each pixel portion 74. Similarly, the control lines D1 to Dn are connected to the comb-shaped electrode branch (not shown in FIG. 12) of the fourth electrode 59 in a region corresponding to each pixel portion 74.
作為第12圖所示結構的液晶顯示裝置的驅動法,可考慮各種方法。例如說明按照每個控制線B1、B2、B3...Bm和行進行顯示重寫的方法(線依次驅動法)。這種情況下,對希望進行相對明亮顯示(反向扭轉狀態)的像素部74施加縱向電場的驅動電壓,對希望進行相對較暗顯示(延展扭轉狀態)的像素部74施加組合縱向電場和橫向電場而成的驅動電壓即可。 Various methods can be considered as the driving method of the liquid crystal display device having the structure shown in Fig. 12. For example, a method of performing display rewriting in accordance with each of the control lines B1, B2, B3, ... Bm and a line (line sequential driving method) will be described. In this case, a driving voltage of a vertical electric field is applied to the pixel portion 74 which is desired to perform a relatively bright display (reverse twist state), and a combined longitudinal electric field and lateral direction are applied to the pixel portion 74 which is desired to perform a relatively dark display (extended torsional state). The driving voltage of the electric field can be used.
依次選擇控制線B2、B3...,將這種驅動電壓施加到對應的像素部74,從而能進行點矩陣顯示。藉由這種驅動而重寫的顯示狀態能夠半永久性地保持。為了重寫該顯示只要再次從控制線B1起執行上述控制即可。另外,此處示出將本發明用於所謂的單純矩陣型液晶顯示裝置的例子,然而本發明還能應用於使用了薄膜電晶體等之主動矩陣型液晶顯示裝置。在主動矩陣型液晶顯示裝置的情況下無需對控制線B1等的每行進行重寫,因此能縮短重寫時間。此外,還能施加閾值2倍以上的電壓,因此能更高速地進行重寫。其中,單側基板具有橫向電場用和縱向電場用的電極,因此每個像素需要2個薄膜電晶體等。 The control lines B2, B3, ... are sequentially selected, and such a driving voltage is applied to the corresponding pixel portion 74, so that dot matrix display can be performed. The display state rewritten by such driving can be held semi-permanently. In order to rewrite the display, it is only necessary to perform the above control from the control line B1 again. Further, although the present invention is applied to an example of a so-called simple matrix liquid crystal display device, the present invention is also applicable to an active matrix liquid crystal display device using a thin film transistor or the like. In the case of the active matrix type liquid crystal display device, it is not necessary to rewrite each line of the control line B1 or the like, so that the rewriting time can be shortened. Further, since a voltage twice or more the threshold value can be applied, the rewriting can be performed at a higher speed. Among them, the single-sided substrate has electrodes for the transverse electric field and the longitudinal electric field, and therefore two thin film transistors and the like are required for each pixel.
如上所述,根據本實施方式以及各實施例,能夠減少利用兩種配向狀態間的轉變的液晶元件中的液晶層的狀態轉變所需的時間。 As described above, according to the present embodiment and the respective embodiments, it is possible to reduce the time required for the state transition of the liquid crystal layer in the liquid crystal element using the transition between the two alignment states.
此外,液晶元件的製造工序基本上與通常的液晶元件的製造工序大致相同,從而成本增高的因素較少。即,能夠以與通常的液晶元件相同的製造技術價廉地製造。 Further, the manufacturing process of the liquid crystal element is basically the same as the manufacturing process of a normal liquid crystal element, and there are few factors for increasing the cost. That is, it can be manufactured inexpensively by the same manufacturing technique as a normal liquid crystal element.
此外,本實施方式等的液晶元件在重寫顯示時以外並不需要功率,因此能夠進行超低功耗驅動,在透射型顯示器、反射型顯示器的任意一個情況下均能夠實現合適的顯示器。尤其在應用於反射型顯示器的情況下有較大優點。 Further, since the liquid crystal element of the present embodiment does not require power other than when the display is rewritten, ultra-low power consumption can be driven, and an appropriate display can be realized in either of the transmissive display and the reflective display. Especially in the case of application to a reflective display, there is a great advantage.
此外,能夠應用利用了配向狀態的記憶性的驅動方法(線依次重寫法等),因此能夠在不使用薄膜電晶體等開關元件的情況下利用單純矩陣顯示進行大容量的點矩陣顯示。因此,能夠以低成本進行大容量顯示。 In addition, since a memory driving method (line sequential rewriting method or the like) using the alignment state can be applied, it is possible to perform large-dot dot matrix display using simple matrix display without using a switching element such as a thin film transistor. Therefore, it is possible to perform large-capacity display at low cost.
另外,本發明不限於上述實施方式的內容,能夠在本發明的主旨範圍內進行各種變化並實施。例如,在上述實施方式等中列舉摩擦處理作為配向處理的具體例子,但還能夠使用除此以外的配向處理(例如光配向法、斜角蒸鍍法等)。此外,關於在說明中列舉的數值條件等,只不過是恰當的一個例子,不一定限定於這些數值條件。 The present invention is not limited to the above-described embodiments, and various changes can be made and implemented within the spirit and scope of the invention. For example, in the above-described embodiment and the like, the rubbing treatment is exemplified as a specific example of the alignment treatment, but other alignment treatments (for example, a photo-alignment method, a bevel vapor deposition method, or the like) can be used. Further, the numerical conditions and the like listed in the description are merely examples and are not necessarily limited to these numerical conditions.
V2、V3‧‧‧施加電壓 V2, V3‧‧‧ applied voltage
t1、t2、t3‧‧‧時間 T1, t2, t3‧‧‧ time
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