TW201405682A - 封裝元件之接合方法及真空舟設備 - Google Patents

封裝元件之接合方法及真空舟設備 Download PDF

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TW201405682A
TW201405682A TW102122104A TW102122104A TW201405682A TW 201405682 A TW201405682 A TW 201405682A TW 102122104 A TW102122104 A TW 102122104A TW 102122104 A TW102122104 A TW 102122104A TW 201405682 A TW201405682 A TW 201405682A
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vacuum
package
package component
boat
holes
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TWI560786B (en
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Ming-Da Cheng
Hsiu-Jen Lin
Cheng-Ting Chen
Wei-Yu Chen
Chien-Wei Lee
Chung-Shi Liu
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Taiwan Semiconductor Mfg
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Abstract

一種封裝元件接合方法包括設置一第一封裝元件在一真空舟上，其中該真空舟包括一孔洞，且該第一封裝元件覆蓋該孔洞；一第二封裝元件設置於該第一封裝元件上，其中一焊接區設置於該第一封裝元件和該第二封裝元件之間。該孔洞為真空，其中該第一封裝元件會受到一朝向真空舟的壓力作用，該壓力是因為孔洞內的真空所產生。當該孔洞內保持真空時，該焊接區會回焊將該第二封裝元件接合至該第一封裝元件。

Description

封裝元件之接合方法及真空舟設備
本發明是關於封裝元件的接合。更具體地來說，本發明有關於封裝元件的接合方式及真空舟設備。
積體電路的封裝中，設備晶片或封裝體將被封裝於封裝基板上，而封裝基板包括金屬連接器，該金屬連接器是用於在封裝基板相反兩側發送電子訊號。覆晶接合法(flip chip bonding)可使設備晶片連結在封裝基板的一側，回焊(reflow)則使焊球融化，而使得晶片與封裝基板相互聯繫。
封裝基板可使用適合層疊的材料，此外，有機材料也可當作封裝基板的電介質材料使用。無論如何，上述這些材料皆容易因為焊料在回焊中所需的升溫而產生翹曲。此外，在接合過程中，由於設備晶片和封裝基板擁有明顯不同的熱膨脹係數(CTEs)，晶片和封裝基板的翹曲會更加惡化。舉例來說，設備晶片中的矽之熱膨脹係數接近3.2，而封裝基板的熱膨脹係數介於17至10之間，亦可能更高。封裝基板的翹曲可能會造成不規則的接合和/或凸塊的裂縫，如此一來，將會對封裝加工的產量產生不利的影響。
本發明為解決一般封裝積體電路時，易產生之翹 曲問題，提出一種封裝元件的接合方法以及真空舟設備，藉由該方法和設備，可避免封裝時因升溫及各材料之間不同熱膨脹係數所產生的翹曲問題。
於本發明一實施例中，設置一第一封裝元件在一真空舟上，其中該真空舟包括一孔洞，且該第一封裝元件遮蔽該孔洞。一第二封裝元件設置於該第一封裝元件之上，還有一焊接區設置於該第一封裝元件和該第二封裝元件之間。該孔洞保持真空，因此該第一封裝元件會受到一面向真空舟的壓力所按壓，當開始回焊加工時，該焊接區會呈熔融態並接合該第二封裝元件至該第一封裝元件，此時孔洞內依然保持真空。
於本發明另一實施例中，設置一封裝基板片在一真空舟上，其中該真空舟包括複數個孔洞，且該封裝基板片遮蔽該些孔洞。複數個封裝元件設置於該封裝基板片上，其中該封裝基板片包括複數個封裝基板，該些封裝元件一對一地設置於該些封裝基板上，還有一焊接區設置於該些封裝元件和該些封裝基板之間。該些孔洞保持真空，因此該封裝基板片會受到一面向真空舟的壓力所按壓，當開始回焊加工時，該焊接區會呈熔融態並接合該些封裝元件至該些封裝基板，此時孔洞內依然保持真空。
於本發明又一實施例中，真空舟包括一基底，該基底包括一上部分、一下部分，其中該上部分呈環形且連接該下部分的邊緣處。該真空舟更包括一空氣滲透層，設置於該基底的該上部分之上並連接該上部分。該空氣滲透層、該上部分以及該下部分在它們之間圍成一空氣通道。複數個孔洞貫穿該 空氣滲透層，其中該些孔洞連接空氣通道與外部環境，一熱絕緣層設置於該基底的下部分之上，一出口連接空氣通道。
10‧‧‧第一封裝元件(封裝基板片)
12‧‧‧封裝基板
14‧‧‧虛線
16‧‧‧連接器
18‧‧‧焊墊
20‧‧‧真空舟
22‧‧‧基底
22A‧‧‧下部分
22B‧‧‧上部分
23‧‧‧熱絕緣層
24‧‧‧空氣滲透層
26‧‧‧孔洞
28‧‧‧空氣通道
29‧‧‧出口
30‧‧‧幫浦
32‧‧‧閥門
36‧‧‧箭頭
38‧‧‧第二封裝元件
40‧‧‧焊接區
42‧‧‧回焊單元
44‧‧‧輸送帶
46‧‧‧箭頭
48‧‧‧加熱源
49‧‧‧箭頭
50‧‧‧腔室
第1A圖係表示本發明一實施例之封裝基板片俯視圖。
第1B圖係表示於第1圖中沿1B-1B方向之剖視圖。
第2A圖係表示本發明一較佳實施例之真空舟剖視圖。
第2B圖係表示本發明另一較佳實施例之真空舟剖視圖。
第2C圖係表示第2A圖和第2B圖所示之真空舟俯視圖。
第3圖係表示複數個封裝元件設置於一封裝基板片上之示意圖。
第4圖係表示本發明一實施例之回焊單元、輸送帶和加熱源在封裝加工時的剖視圖。
當前實施例的實施方式及運用將在下面幾點詳述。應當理解到，所揭露的發明概念在具體施行情況中將涵蓋各種不同的變化情形。討論具體實施例僅是為了說明具體施行的方法，並不因此縮減所揭露的範圍。
在本發明實施例中已提供封裝的方法，各種實施例的變化也有所討論。遍及各種視圖和所說明之實施例，類似的標號用於指定類似元件。可以理解到，所提及之實施例皆為較佳的實施例，如第1A圖到第4圖，有更多的實施例會以此較佳的實施例為基礎而被發展。
第1A圖表示當一接合過程施行時，第一封裝元件 10的俯視圖。第一封裝元件10可能為一封裝基板片，因此以下將其稱為封裝基板片10，當然封裝元件10亦可為其他種類的封裝元件，像是中介層(interposer)。封裝基板12可能為一多層基板，包括複數個介電薄膜互相層疊，在一實施例中，封裝基板片10包括的封裝基板12都是相同的。在一些實施例中，封裝基板12均勻分布於封裝基板片10，且可為一陣列模式。在其他實施例中，封裝基板12亦可以複數個群組的方式分布，其中各群組間的間距大於群組內封裝基板12的間距。
第1B圖表示封裝基板12的剖視圖，其中該剖視圖為跨越第1A圖中的線1B-1B之剖視圖。複數個連接器16形成於封裝基板12之一側，可能為預焊區(pre-solder regions)、金屬接墊(metal pads)或非回焊金屬凸塊(non-reflowable metal bumps)，連接器16電性連接位於封裝基板12相反側的金屬點，例如焊墊18。虛線14表示連接連接器16和焊墊18的結構，其中該結構可能包括複數個金屬線和將金屬線互連的孔。
第2A圖和第2B圖表示在較佳的實施例中，真空舟20(vacuum boat)的剖視圖。真空舟20包括基底22，該基底22更包括下部分22A以及上部分22B，空氣滲透層24連接於上部分22B的上方。下部分22A位於空氣滲透層24下方且被其所覆蓋，空氣滲透層24與下部分22A垂直地被空氣通道28所隔開，而空氣通道28中充滿著空氣(或為真空)，上部分22B為一環狀結構且包圍空氣通道28，除此之外，上部分22B與空氣滲透層24沒有間隙的結合在一起。基底22為非多孔性材料，如此可有效率地避免空氣滲透，空氣通道28可能擁有如同封裝基板片10 的俯視圖之外型(像是矩形)。在某些較佳的實施例中，下部分22A、上部分22B以及空氣滲透層24為足以維持真空的剛性材料，如此一來真空舟20將不會因真空而毀壞。舉例來說，下部分22A、上部分22B以及空氣滲透層24可能為金屬或金屬合金，像是銅、鋁、不鏽鋼等等；或者，下部分22A、上部分22B以及空氣滲透層24可為陶瓷。
請再次參閱第2A圖及第2B圖，基底22可能也包括熱絕緣層23，該熱絕緣層23為熱絕緣材料，舉例來說，熱絕緣層23的導熱係數可能低於1W/K．m。熱絕緣層23可承受焊料的熔化溫度(或略高之溫度)而不損壞，舉例來說，熱絕緣層23被設置來承受高於200℃或更高大約230℃之溫度。在一些較佳的實施例中，熱絕緣層23為聚四氟乙烯(Teflon)。
請參閱第2A圖，熱絕緣層23有項功能是當回焊加工(reflow process，如第4圖)時可以避免空氣滲透層24吸收過多的熱，並傳導至下部分22A。如果沒有熱絕緣層23，下部分22A在如第4圖所示之回焊加工時會吸收過多的熱，因此導致封裝基板12、封裝元件38和焊接區40的溫度不利地被減低(第4圖)。
如第2A圖和第2B圖所示，空氣滲透層24可能包括複數個孔洞26，而空氣通道28與之連接，因此可以從孔洞26與外部環境(如大氣)交換空氣，空氣通道28亦連接出口29，該出口29可經由幫浦30和閥門32連接外部環境。出口29是用於把空氣通道28和孔洞26中的空氣抽成真空，生成一個真空環境(當封裝基板片10設置於空氣滲透層24上時，如第3圖及第4圖)。 閥門32也用於允許空氣流進空氣通道28和孔洞26來釋放真空。在一些實施例中，一額外的閥門(未顯示)可連接空氣通道28，如此一來閥門32就用於製造真空，而額外的閥門則用於釋放真空。
第2B圖表示關於另一實施例中，真空舟20的剖視圖。在這實施例中，熱絕緣層23為空氣滲透層24之頂層，孔洞26亦於熱絕緣層23成形，並穿透至熱絕緣層23之下的空氣絕緣層24底部部分。空氣滲透層24的下部分可為剛性材料，如金屬、金屬合金、陶瓷等等，如此一來空氣滲透層24的下部分提供熱絕緣層23充足的機械支撐。在這實施例中，當如第2B圖所示之真空舟20用於接合封裝基板片10和第二封裝元件38時(第3圖和第4圖)，封裝基板片10可與熱絕緣層23接觸，如此一來封裝基板片10和焊接區40的熱將不會傳導至真空舟20的基底22。
第2C圖表示第2A圖和第2B圖的結構俯視圖，有複數個孔洞26分布於整個空氣滲透層24。這些複數孔洞26顯然呈均勻分布，舉例來說，呈陣列，或其他模式如半徑模式、螺旋模式等等。第2C圖同時說明了封裝基板片10設置於空氣滲透層24上，封裝基板片10以虛線表示。空氣滲透層24的俯視圖可為一矩形結構，然而其他形狀亦可被採用。
在第3圖和第4圖中，雖然幫浦30和閥門32被介紹用以連接於真空舟20，但幫浦30和閥門32亦可在回焊加工前連接(如第4圖)，並於回焊加工後從真空舟20拆除。此外，第3圖及第4圖中的真空舟20為第2A圖所介紹的，為了用來說明實施 例的概念，惟第3圖和第4圖所使用的真空舟20亦可採用第2B圖的結構。
請參閱第3圖，封裝基板片10設置於真空舟20之上，孔洞26被封裝基板片10遮蔽且密封。接著，幫浦30將抽離空氣通道28和孔洞26之內的空氣，箭頭36代表空氣撤離的方向。在製造真空的過程中，因為真空產生的壓差會導致一向下的力施加於封裝基板片10，因此封裝基板片10將會變得扁平。在製造真空的過程中，空氣通道28和孔洞26的壓力可能為低於大氣壓力的任意數值，舉例來說，空氣通道28的壓力可能低於大氣壓力的50%。第二封裝元件38設置於封裝基板12上，舉例來說，是一對一對應的，焊接區40位於封裝基板12和第二封裝元件38之間，第二封裝元件38可於製造真空開始之前或之後設置於封裝基板片10。在一些實施例中，第二封裝元件38為晶片(像是包括在CMOS設備中的設備晶片)、封裝體等等。經由這些描述，真空舟20、封裝基板12和第二封裝元件38的組合整體上可視為一回焊單元42。
接著，如第4圖所示，回焊單元42將執行回焊加工，使得焊接區40產生回焊，因此第二封裝元件38將各自接合底下的封裝基板12。在一些較佳的實施例中，執行回焊會使用對流型回焊設備，如第4圖所示。舉例來說，回焊加工可於一腔室50內執行，回焊單元42被輸送帶44運輸進出腔室50。在回焊時，輸送帶44和回焊單元42向前移動，如箭頭46所示。可以理解到，在其他實施例中，執行回焊亦可使用除了對流型回焊設備以外的回焊方法。如第4圖所示，複數個回焊單元42設置 於輸送帶44，並一個接著一個被運輸進出腔室50。當回焊單元42被運輸出腔室50後，回焊單元42將從輸送帶44上被移除，而一額外的回焊單元42將被放置於輸送帶44上，其中該額外的回焊單元42所包括的第二封裝元件38和封裝基板12尚未接合。
在回焊過程中，輸送帶44將運輸回焊單元42經過一個或多個的加熱區，該些加熱區包括一個或多個的加熱源48，用於加熱焊接區40。當回焊單元42被運輸經過加熱源48，第二封裝元件38和其下方封裝基板12之間的焊接區40會被加熱至溫度高於焊接區40的熔化溫度，因此焊接區40將會呈熔融態。在一些實施例中，加熱源48可被設置於高於及/或低於回焊單元42以及輸送帶44的地方。加熱源48可為一輻射狀加熱源，像是紅外線輻射源，或對回焊單元42吹熱氣的設備。連接加熱源48的箭頭49指向象徵輻射熱或熱氣等等。
回焊加工的過程中，當要產生真空時，操作幫浦30來保持封裝基板12的氣壓。可於其中的任意時間點開始抽氣，舉例來說，可在設置封裝基板片10於真空舟20上之後，且設置第二封裝元件38之前或之後開始抽氣。在另一實施例中，可在回焊單元42放置於輸送帶44上之後，且焊接區40呈熔融態之前開始抽氣。在又一實施例中，可在焊接區40呈熔融態之後，且焊接區40凝固之前開始抽氣。真空將會在回焊加工結束之前一直保持，屆時，焊接區40將冷卻且至少大致或完全固化，第二封裝元件38從而與其下方的封裝基板12接合。此時真空可以釋放，舉例來說，允許空氣經由閥門32進入空氣通道28，而幫浦30則與真空舟20斷開。
在一些實施例中，不同回焊單元42的幫浦30為可分離的幫浦。在另一實施例中，幫浦30可為具有複數個入口的同一幫浦，其中每一入口分別連接至一回焊單元42。
在一實施例中，經由回焊加工，封裝基板12會因為空氣通道28和孔洞26內的真空，所產生的壓差而變得扁平(第3圖和第4圖)。於是，由於第二封裝元件38內不同材料的不同熱膨脹係數所造成封裝基板12的翹曲會被大致消除，使封裝的可靠度可獲得改善。
依據前述各實施例所述，本發明更提供一種封裝元件之接合方法，包括設置第一封裝元件在真空舟上，其中真空舟包括一孔洞，且第一封裝元件遮蔽該孔洞；一第二封裝元件設置於第一封裝元件上，其中焊接區設置於第一封裝元件和第二封裝元件之間。前述孔洞為真空的，其中第一封裝元件會受到一朝向真空舟的壓力作用，此壓力是由於孔洞內的真空所產生。當孔洞內保持真空時，焊接區會產生回焊以接合第二封裝元件至第一封裝元件。
依據前述各實施例所述，本發明更提供一種封裝元件之接合方法，包括設置封裝基板片在真空舟上，其中真空舟包括複數個孔洞，且封裝基板片遮蔽該些複數個孔洞。該封裝基板片包括複數個封裝基板，複數個封裝元件設置於封裝基板片上，其中該些封裝元件一對一地設置於封裝基板片上的該些封裝基板上。複數個孔洞內的空氣將被抽出，並於封裝基板片上產生一朝向真空舟的壓力。設置於該些封裝元件和封裝基板間的焊接區將回焊以接合封裝元件和封裝基板，其中抽取空 氣的步驟會執行至焊接區大致固化為止。
依據前述實施例所述，真空舟包括一基底，該基底包括呈環形的上部分和位於上部分之下的下部分，其中上部分連接下部分的邊緣處。真空舟更包括一空氣滲透層，設置於基底的上部分之上並連接該上部分。空氣滲透層、上部分以及下部分在它們之間圍成一空氣通道。複數個孔洞貫穿空氣滲透層，其中該些孔洞連接空氣通道與外部環境，一熱絕緣層設置於基底的下部分之上，一出口連接空氣通道。
雖然當前揭露的實施例及其優點都鉅細靡遺地描述，但理應理解到，在不離開本精神和揭露範圍所定義的附加申請專利範圍，在這裡可以有各種變動、替代或修改。此外，本發明並無意限制當前的範圍在說明書內特定實施例的流程、機器、製造、物品組成、工具、方法和步驟。一般了解此技術領域的人可以很容易明白，從當前所揭露、流程、設備、製造、物品組成、工具、方法或步驟，當前存在或將要開發的，相對於這裡介紹的實施例，展現大幅相同功能或達到大幅相同結果，可能使用的是源於當前所揭露。據此，附加的申請專利範圍可包括那些流程、設備、製造、物品組成、工具、方法或步驟的範圍。另外，每一申請專利範圍構成個別的實施例，且本發明之揭露範圍也包括各個申請專利範圍及實施例的組合。
10‧‧‧第一封裝元件(封裝基板片)
12‧‧‧封裝基板
26‧‧‧孔洞
28‧‧‧空氣通道
30‧‧‧幫浦
32‧‧‧閥門
38‧‧‧第二封裝元件
40‧‧‧焊接區
42‧‧‧回焊單元
44‧‧‧輸送帶
46‧‧‧箭頭
48‧‧‧加熱源
49‧‧‧箭頭
50‧‧‧腔室

Claims (10)

  1. 一種封裝元件之接合方法，包括：設置一第一封裝元件於一真空舟上，其中該真空舟包括一孔洞，且該第一封裝元件遮蔽該孔洞；設置一第二封裝元件於該第一封裝元件上，其中該第一封裝元件和該第二封裝元件之間設置一焊接區；於該孔洞內製造真空，其中該第一封裝元件受到一朝向該真空舟的壓力作用，且該壓力是由於該孔洞內的真空所產生；以及當該孔洞內保持真空時，對該焊接區執行一回焊步驟以接合該第二封裝元件至該第一封裝元件。
  2. 如申請專利範圍第1項所述之封裝元件之接合方法，更包括：在該真空舟中設置一熱絕緣層，以抑制該第一封裝元件傳遞其中的熱至該真空舟之一下部分。
  3. 如申請專利範圍第1項所述之封裝元件之接合方法，其中在該回焊步驟中持續使該孔洞內保持真空，直到該焊接區大致固化。
  4. 如申請專利範圍第1項所述之封裝元件之接合方法，其中該真空舟更包括複數個孔洞，且於製造真空的步驟中，該些孔洞形成真空。
  5. 如申請專利範圍第1項所述之封裝元件之接合方法，其中於該回焊步驟中，更包括接合複數個第二封裝元件至該第一封裝元件。
  6. 一種真空舟設備，包括： 一基底，其中該基底包括：一上部分，該上部分為環狀；一下部分，該下部分位於該上部分之下，其中該上部分連接該下部分的邊緣處；一空氣滲透層，設置於該基底之該上部分之上且連接該上部分，其中該空氣滲透層、該上部分及該下部分之間形成一空氣通道；複數個孔洞，貫穿該空氣滲透層，其中該些孔洞連接該空氣通道至外部環境；一熱絕緣層，設置於該基底之該下部分之上；以及一出口，連接該空氣通道。
  7. 如申請專利範圍第6項所述之真空舟設備，其中當一封裝基板片置於該空氣滲透層上時，該空氣通道被密封。
  8. 如申請專利範圍第7項所述之真空舟設備，更包括：一幫浦，連接該出口，其中該幫浦製造該空氣通道和該些孔洞內的真空，且該真空舟設備藉由真空朝向該空氣滲透層作用一壓力予該封裝基板片。
  9. 如申請專利範圍第6項所述之真空舟設備，其中該熱絕緣層在該空氣通道之下。
  10. 如申請專利範圍第6項所述之真空舟設備，其中該熱絕緣層在該空氣通道之上，且該些孔洞貫穿該熱絕緣層。
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US11432372B2 (en) 2022-08-30
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US20170098571A1 (en) 2017-04-06
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US20140027431A1 (en) 2014-01-30
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