TW201347027A

TW201347027A - Apparatus and process for single wafer wet processing with vertical batch soaking processor

Info

Publication number: TW201347027A
Application number: TW101117062A
Authority: TW
Inventors: Yu-Ming Chien; Yun-Chen Chiu; Wen-Ming Liu
Original assignee: Grand Plastic Technology Co Ltd
Priority date: 2012-05-14
Filing date: 2012-05-14
Publication date: 2013-11-16

Abstract

This invention reveals an apparatus and process for single wafer wet processing with vertical batch soaking processor, for photo-resist or polymer stripping from a wafer surface. A robot moves the wafers one by one from a cassette and set the wafers vertically on a soaking cassette of the soaking trough for batch soaking. After soaking, remove the wafer one by one and put into the horizontal etching trough to etch and remove the photo-resist. After etching, remove the wafer to a cleaning trough to clean the wafer with D.I. water or chemical solution. After cleaning, remove the wafer to the cassette.

Description

具有垂直批次浸泡製程之單晶圓濕製程裝置及製程 Single wafer wet process device and process with vertical batch immersion process

本發明係有關於一種單晶圓濕製程裝置及製程，特別是一種具有垂直批次浸泡製程之單晶圓濕製程裝置及製程，以增加浸透力，使蝕刻保護膜易於去除而增進效率，減少製程時間並增加良率。 The invention relates to a single-wafer wet process device and a process, in particular to a single-wafer wet process device and a process with a vertical batch immersion process, so as to increase the immersion force, and the etch protection film can be easily removed to improve efficiency and reduce the efficiency. Process time and increase yield.

積體電路製程中，以微影蝕刻形成圖案後，必須以蝕刻液去除保護光阻或保護膜，一般皆先浸泡，再清洗，然後旋乾，每一步驟皆以單晶圓水平處理設備處理。但浸泡製程需要較長時間，其他需時較短的製程必須等待每一片晶圓浸泡完了才能處理，使機台之使用效率不能提升。授予Ma等人之美國專利第20020162578A1號提出一種去除保護光阻或保護膜之浸泡方法，主要是將晶圓置於80℃之蝕刻液，再冷卻至室溫，再清洗、旋乾，而不需將晶圓置於緩衝液中。固然可以節省時間，但仍以單晶圓水平處理設備處理，是其缺點。 In the integrated circuit process, after patterning by lithography, the protective photoresist or protective film must be removed with an etchant. Generally, it is first immersed, then cleaned, and then spin-dried. Each step is processed by a single-wafer horizontal processing device. . However, the immersion process takes a long time, and other processes requiring shorter time must wait for each wafer to be immersed before processing, so that the efficiency of the machine cannot be improved. U.S. Patent No. 20020162578 A1 to Ma et al. proposes a method of removing a protective photoresist or a protective film, mainly by placing the wafer in an etching solution at 80 ° C, cooling it to room temperature, then washing and spinning, without The wafer needs to be placed in a buffer. Although it can save time, it is still handled by a single-wafer horizontal processing device, which is a disadvantage.

故有一種需求，能有批次浸泡之設計，以節省時間，同時具有垂直浸泡之設計，使浸泡更均勻而增加良率。 Therefore, there is a need to have a batch immersion design to save time and a vertical immersion design to make immersion more uniform and increase yield.

本發明即針對此一需求，提出一種能解決以上缺點之裝置及製程。 The present invention addresses this need and proposes a device and process that can solve the above disadvantages.

本發明之目的在提供一種具有垂直批次浸泡製程之單晶圓濕製程裝置及製程，以增加浸透力，使蝕刻保護膜易於去除而增進效率，減少浸泡時間。 SUMMARY OF THE INVENTION The object of the present invention is to provide a single wafer wet process apparatus and process having a vertical batch immersion process to increase the penetration force, to facilitate the removal of the etch protection film, thereby improving efficiency and reducing immersion time.

本發明之次一目的在提供一種具有垂直批次浸泡製程之單晶圓濕製程裝置及製程，使浸泡更均勻而增加良率。 A second object of the present invention is to provide a single wafer wet process apparatus and process having a vertical batch immersion process to make immersion more uniform and increase yield.

本發明之再一目的在提供一種具有垂直批次浸泡製程之單晶圓濕製程裝置及製程，使振盪時晶圓更穩定。 Still another object of the present invention is to provide a single wafer wet process apparatus and process having a vertical batch immersion process to make the wafer more stable during oscillation.

為達成上述目的及其他目的，本發明之第一觀點教導一種具有垂直批次浸泡製程之單晶圓濕製程裝置，用以去除晶圓上之蝕刻保護膜，例如光阻或印製膜，以機械手臂將晶圓置入浸泡槽、旋轉槽及清洗槽等製程槽中，包括：一個機械手臂，具有將晶圓自一製程槽移至另一製程槽，並可將晶圓自水平改為垂直，或自垂直改為水平之功能；一個浸泡槽，具有一個晶圓浸泡盒，該浸泡槽內有浸泡液，浸泡液經循環過濾迴路以保持堪用，機械手臂將晶圓一片一片垂直放置於該晶圓浸泡槽之浸泡盒內，成為一個批次，然後振動裝置使該晶圓浸泡盒上下振動，振動之頻率為0~100 s/min，振幅為0 mm~3 mm，以增加浸透力，使蝕刻保護膜易於去除；一個旋轉蝕刻槽，具有旋轉單片晶圓並噴灑化學液，蝕刻去除蝕刻保護膜之功能；一個清洗槽，具有以純水或化學品清洗單片晶圓之功能。 To achieve the above and other objects, a first aspect of the present invention teaches a single wafer wet process apparatus having a vertical batch immersion process for removing an etch protection film on a wafer, such as a photoresist or a printed film, The robot arm places the wafer into a process tank such as a soaking tank, a rotating tank and a cleaning tank, and includes: a robot arm for moving the wafer from one processing tank to another, and changing the wafer from horizontal to horizontal Vertical, or vertical to horizontal function; a soaking tank with a wafer soaking tank, the soaking tank contains soaking liquid, the soaking liquid is kept through the circulation filter circuit, and the robot arm places the wafer vertically In the soaking box of the wafer soaking tank, it becomes a batch, and then the vibrating device vibrates the wafer soaking box up and down, the vibration frequency is 0~100 s/min, and the amplitude is 0 mm~3 mm to increase the soaking. Force to make the etching protection film easy to remove; a rotary etching groove, which has the function of rotating a single wafer and spraying chemical liquid, etching and removing the etching protection film; and a cleaning tank having a pure water or chemical cleaning sheet Wafer function.

本發明之另一觀點教導一種垂直批次浸泡之單晶圓濕製程，用以去除晶圓上之蝕刻保護膜，例如光阻或印製膜，包含下列步驟：1.以機械手臂將晶圓自晶圓盒一片一片自水平改為垂直放置於浸泡槽之晶圓浸泡盒內，成為一個批次；2.振動裝使晶圓浸泡盒上下振動，振動之頻率為0~100 s/min，振幅為0 mm~3 mm，以增加浸透力，使保護膜易於去除；3.蝕刻完成後以機械手臂將晶圓一片一片自該晶圓浸泡盒取出至旋轉蝕刻槽，將晶圓旋轉並噴灑化學液，蝕刻去除保護膜；4晶圓蝕刻完成後，以機械手臂將晶圓移至清洗槽，以純水或化學品清洗晶圓；5.清洗完成，以機械手臂將晶圓移至晶圓盒。 Another aspect of the present invention teaches a single-wafer wet process for vertical batch immersion to remove an etch protection film on a wafer, such as a photoresist or a printed film, comprising the following steps: 1. Wafer the wafer with a robotic arm From the wafer cassette, one piece is changed from horizontal to vertical in the wafer soaking box of the soaking tank, and becomes a batch; 2. The vibration device makes the wafer soaking box vibrate up and down, and the frequency of vibration is 0~100 s/min, The amplitude is 0 mm~3 mm to increase the penetration force, so that the protective film can be easily removed. 3. After the etching is completed, the wafer is taken out from the wafer immersion box by the robot arm to the rotary etching tank, and the wafer is rotated and sprayed. Chemical liquid, etching to remove the protective film; 4 after the wafer is etched, move the wafer to the cleaning tank with a robot arm to clean the wafer with pure water or chemicals; 5. After cleaning, move the wafer to the crystal with a robotic arm Round box.

本發明之以上及其他目的及優點參考以下之參照圖示及最佳實施例之說明而更易完全瞭解。 The above and other objects and advantages of the present invention will be more fully understood from the description and appended claims appended claims.

請參考第1圖，第1圖係依據本發明實施例之浸泡槽。第1圖(A)為剖面圖。浸泡槽102內有浸泡液110，浸泡液經循環過濾迴路114以保持堪用，供機械手臂202(見第2圖)直接自裝載區之晶圓盒內將晶圓一片一片垂直放置於該晶圓浸泡盒104內，如箭頭118所示。至晶圓浸泡盒104內有整批晶圓106，上端之振動裝置108，可使晶圓浸泡盒104上下振動，如箭頭112所示，以增加浸透力，使蝕刻保護膜易於去除，浸泡完成，以機械手臂將晶圓一片一片移至旋轉蝕刻槽208(見第2圖)。第1圖(B)為晶圓浸泡盒之透視圖。晶圓浸泡盒104可垂直置放整批晶圓106，上端有振動裝置108，可使晶圓浸泡盒104上下振動，使振盪時晶圓更穩定而使浸泡更均勻以增加良率。 Please refer to FIG. 1, which is a dipping tank according to an embodiment of the present invention. Fig. 1(A) is a cross-sectional view. The soaking tank 102 has a soaking liquid 110 therein, and the soaking liquid is maintained by the circulation filtering circuit 114 for the robot arm 202 (see FIG. 2) to directly place the wafers vertically in the wafer cassette in the loading area. Inside the dome soaking box 104, as indicated by arrow 118. There is a whole batch of wafers 106 in the wafer immersion box 104, and the vibration device 108 at the upper end can vibrate the wafer immersion box 104 up and down, as indicated by an arrow 112, to increase the immersion force, so that the etching protection film can be easily removed, and the immersion is completed. The robot is used to move the wafer one by one to the rotary etching bath 208 (see Figure 2). Figure 1 (B) is a perspective view of the wafer immersion box. The wafer immersion box 104 can vertically place the entire wafer 106, and the upper end has a vibration device 108, which can vibrate the wafer immersion box 104 up and down, so that the wafer is more stable during oscillation and the immersion is more uniform to increase the yield.

請參考第2圖，第2圖係依據本發明實施例具有垂直批次浸泡製程之單晶圓濕製程裝置之示意圖。具有垂直浸泡製程之單晶圓濕製程裝置200中間有一個機械手臂202，用以將晶圓自一製程槽移至另一製程槽，並可將晶圓自水平改為垂直，或自垂直改為水平之功能。晶圓盒自緩衝區212傳送至晶圓盒裝載區203供機械手臂202直接將晶圓一片一片自水平改為垂直放置於浸泡槽102內之晶圓浸泡盒104內整批浸泡；浸泡時間到達，機械手臂202再將晶圓一片一片由浸泡盒傳送至旋轉蝕刻槽208旋轉蝕刻；旋轉蝕刻完成，以機械手臂將晶圓移至傳送至清洗槽210清洗；清洗完畢，以機械手臂將晶圓移至傳送至晶圓盒卸載區204裝入晶圓盒。 Please refer to FIG. 2, which is a schematic diagram of a single wafer wet process apparatus having a vertical batch immersion process according to an embodiment of the present invention. A single-wafer wet process device 200 having a vertical immersion process has a robot arm 202 for moving the wafer from one process slot to another, and changing the wafer from horizontal to vertical or from vertical. Level function. The wafer cassette is transferred from the buffer 212 to the wafer cassette loading area 203 for the robot arm 202 to directly immerse the wafers in a wafer soaking box 104 which is placed horizontally from the horizontal to the immersion tank 102; the immersion time is reached. The robot arm 202 then transfers the wafer one by one from the infusion box to the rotary etching bath 208 for rotary etching; the rotary etching is completed, the robot arm is moved to the cleaning tank 210 for cleaning; after cleaning, the wafer is pulled by the robot arm Move to the pod unloading area 204 to load the wafer cassette.

請參考第3圖，第3圖係依據本發明實施例之單晶圓濕製程流程圖。裝載/卸載製程302，將晶圓盒自緩衝區傳送晶圓盒至裝載區；機械手臂移置製程304，以機械手臂將晶圓自晶圓盒一片一片自水平改為垂直放置於浸泡槽內之晶圓浸泡盒內；浸泡製程306，振動裝置使晶圓浸泡盒上下振動，以增加浸透力，使保護膜易於去除；機械手臂移置傳送至製程308，浸泡時間到達，以機械手臂將一片晶圓自晶圓浸泡盒傳送至旋轉蝕刻槽；旋轉蝕刻製程310，將晶圓旋轉並噴灑化學液，蝕刻去除保護膜；機械手臂將晶圓傳送製程312，蝕刻完成後旋轉完畢，以機械手臂將此晶圓移至清洗槽，清洗製程314，以純水或化學品清洗晶圓，直至晶圓浸泡盒之晶圓清完成；回到裝載/卸載製程302，循環以上製程。 Please refer to FIG. 3, which is a flow chart of a single wafer wet process according to an embodiment of the present invention. Loading/unloading process 302, transferring the wafer cassette from the buffer to the loading area; the robot arm shifting process 304, using the robotic arm to place the wafer from the wafer cassette from horizontal to vertical in the immersion tank In the wafer soaking box; the soaking process 306, the vibration device causes the wafer soaking box to vibrate up and down to increase the penetration force, so that the protective film is easily removed; the mechanical arm is displaced and transferred to the process 308, When the immersion time arrives, the robot arm transfers a wafer from the wafer immersion box to the rotary etch tank; the etch process 310 rotates the wafer and sprays the chemical liquid to etch away the protective film; the robot arm transfers the wafer to the process 312. After the etching is completed, the rotation is completed, the robot arm is moved to the cleaning tank, and the cleaning process 314 is performed to clean the wafer with pure water or chemicals until the wafer cleaning of the wafer infusion box is completed; returning to the loading/unloading process 302 , cycle above the process.

藉由以上較佳之具體實施例之詳述，係希望能更加清楚描述本創作之特徵與精神，而並非以上述所揭露的較佳具體實例來對本發明之範疇加以限制。相反的，其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範疇內。 The features and spirit of the present invention are more clearly described in the detailed description of the preferred embodiments of the present invention, and are not intended to limit the scope of the invention. On the contrary, the intention is to cover various modifications and equivalent arrangements within the scope of the invention as claimed.

102‧‧‧浸泡槽 102‧‧‧soaking tank

104‧‧‧第一位置之晶圓浸泡盒 104‧‧‧The first position of the wafer soaking box

104-1‧‧‧第一位置之晶圓浸泡盒 104-1‧‧‧The first position of the wafer soaking box

106‧‧‧晶圓 106‧‧‧ wafer

108‧‧‧振動裝置 108‧‧‧Vibration device

110‧‧‧浸泡液 110‧‧‧ soaking solution

112‧‧‧振動箭頭 112‧‧‧Vibration arrow

114‧‧‧循環過濾迴路 114‧‧‧Circuit filter circuit

118‧‧‧箭頭 118‧‧‧ arrow

200‧‧‧單晶圓濕製程裝置 200‧‧‧Single wafer wet process device

202‧‧‧機械手臂 202‧‧‧ Robotic arm

203‧‧‧晶圓盒裝載區 203‧‧‧Facsimile loading area

204‧‧‧晶圓盒卸載區 204‧‧‧Facsimile unloading area

208‧‧‧旋轉蝕刻槽 208‧‧‧Rotating etching tank

210‧‧‧清洗槽 210‧‧‧cleaning tank

302‧‧‧裝載/卸載製程 302‧‧‧Loading/Unloading Process

304‧‧‧械手臂移置製程 304‧‧‧ Arm Displacement Process

306‧‧‧浸泡製程 306‧‧‧soaking process

308‧‧‧機械手臂移置製程 308‧‧‧ Robot arm shifting process

310‧‧‧旋轉蝕刻製程 310‧‧‧Rotary etching process

312‧‧‧機械手臂移置製程 312‧‧‧Manipulator Displacement Process

314‧‧‧清洗製程 314‧‧‧cleaning process

第1圖係依據本發明實施例之浸泡槽；第1圖(A)為剖面圖；第1圖(B)為晶圓浸泡盒之透視圖。 1 is a immersion tank according to an embodiment of the present invention; FIG. 1(A) is a cross-sectional view; and FIG. 1(B) is a perspective view of a wafer immersion box.

第2圖係依據本發明實施例具有垂直批次浸泡製程之單晶圓濕製程裝置之示意圖。 2 is a schematic view of a single wafer wet process apparatus having a vertical batch immersion process in accordance with an embodiment of the present invention.

第3圖係依據本發明實施例之單晶圓濕製程流程圖。 Figure 3 is a flow chart of a single wafer wet process in accordance with an embodiment of the present invention.

102‧‧‧浸泡槽 102‧‧‧soaking tank

106‧‧‧晶圓 106‧‧‧ wafer

108‧‧‧振動裝置 108‧‧‧Vibration device

110‧‧‧浸泡液 110‧‧‧ soaking solution

112‧‧‧振動箭頭 112‧‧‧Vibration arrow

114‧‧‧循環過濾迴路 114‧‧‧Circuit filter circuit

118‧‧‧箭頭 118‧‧‧ arrow

Claims

一種具有垂直批次浸泡製程之單晶圓濕製程裝置，用以去除晶圓上之蝕刻保護膜，以機械手臂將晶圓置入浸泡槽、旋轉槽及清洗槽等製程槽中，至少包含：一個機械手臂，具有將晶圓自一製程槽移至另一製程槽，並可將晶圓自水平改為垂直，或自垂直改為水平之功能；一個浸泡槽，具有一個晶圓浸泡盒，該浸泡槽內有浸泡液，浸泡液經循環過濾迴路以保持堪用，機械手臂將晶圓一片一片垂直放置於該晶圓浸泡槽之浸泡盒內，成為一個批次，然後振動裝置使該晶圓浸泡盒上下振動，以增加浸透力，使蝕刻保護膜易於去除；一個旋轉蝕刻槽，具有旋轉單片晶圓並噴灑化學液，蝕刻去除蝕刻保護膜之功能；一個清洗槽，具有以純水或化學品清洗單片晶圓之功能。 A single-wafer wet process device with a vertical batch immersion process for removing an etch protection film on a wafer, and placing the wafer into a process tank such as a immersion tank, a rotary tank, and a cleaning tank by a robot arm, including at least: A robotic arm that has the function of moving a wafer from one process slot to another, and changing the wafer from horizontal to vertical or from vertical to horizontal; a soaking tank with a wafer immersion box, The soaking tank has a soaking liquid, and the soaking liquid is kept through the circulation filtering circuit, and the robot arm vertically places the wafer in the soaking box of the wafer soaking tank, becomes a batch, and then vibrates the crystal to make the crystal The round soaking box vibrates up and down to increase the penetration force, so that the etching protection film is easy to remove; a rotary etching groove has the function of rotating a single wafer and spraying a chemical liquid, etching and removing the etching protection film; and a cleaning tank having pure water Or the function of chemicals to clean a single wafer.

一種垂直浸泡之單晶圓濕製程，用以去除晶圓上之蝕刻保護膜，至少包含下列步驟：以機械手臂將晶圓自晶圓盒一片一片自水平改為垂直放置於浸泡槽之晶圓浸泡盒內，成為一個批次；振動裝使該晶圓浸泡盒上下振動，以增加浸透力，使保護膜易於去除；晶圓浸泡完時間到達，以機械手臂將晶圓一片一片自該晶圓浸泡盒傳送至旋轉蝕刻槽；將晶圓旋轉並噴灑化學液，蝕刻去除保護膜；每一片晶圓旋轉完畢，以機械手臂將晶圓傳送至清洗槽，以純水或化學品清洗晶圓；清洗完畢，以機械手臂將晶圓傳送至晶圓盒。 A vertically immersed single-wafer wet process for removing an etched protective film on a wafer, comprising at least the following steps: using a robotic arm to change a wafer from a wafer cassette to a wafer vertically placed in a immersion bath In the soaking box, it becomes a batch; the vibration device makes the wafer soaking box vibrate up and down to increase the soaking force, so that the protective film is easy to remove; when the wafer is soaked, the wafer is taken from the wafer by the robot arm. The infusion box is transferred to the rotary etching tank; the wafer is rotated and sprayed with the chemical liquid, and the protective film is removed by etching; each wafer is rotated, the wafer is transferred to the cleaning tank by the robot arm, and the wafer is cleaned with pure water or chemicals; After cleaning, the robot is used to transfer the wafer to the wafer cassette.

如申請專利範圍第1或2項之裝置，其中該蝕刻保護膜為光阻。 The device of claim 1 or 2, wherein the etching protection film is a photoresist.

如申請專利範圍第1或2項之裝置，其中該蝕刻保護膜為印製膜。 The device of claim 1 or 2, wherein the etching protective film is a printed film.

如申請專利範圍第1或2項之裝置，其中該晶圓浸泡盒振動之頻率為0~100 s/min。 For example, the device of claim 1 or 2, wherein the wafer soaking box vibrates at a frequency of 0 to 100 s/min.

如申請專利範圍第1或2項之裝置，其中該晶圓浸泡盒振動之振幅為0 mm~3 mm。 The device of claim 1 or 2, wherein the vibration of the wafer soaking box has an amplitude of 0 mm to 3 mm.