TW201341118A - Single wafer-type chemical polishing device - Google Patents
Single wafer-type chemical polishing device Download PDFInfo
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- TW201341118A TW201341118A TW101137729A TW101137729A TW201341118A TW 201341118 A TW201341118 A TW 201341118A TW 101137729 A TW101137729 A TW 101137729A TW 101137729 A TW101137729 A TW 101137729A TW 201341118 A TW201341118 A TW 201341118A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
- C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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Abstract
Description
本發明,係有關於構成為對於被連續性搬送而來之複數的玻璃基板而進行化學研磨處理之化學研磨裝置。 The present invention relates to a chemical polishing apparatus configured to perform a chemical polishing treatment on a plurality of glass substrates that are continuously conveyed.
為了將玻璃基板薄型化,一般而言係有必要使用包含氟酸之化學研磨液來對於玻璃基板進行化學研磨處理。作為此種化學研磨處理,係可列舉出:將應處理之玻璃基板在裝入有化學研磨液之槽中浸漬特定時間的批次式化學研磨、以及將應處理之玻璃基板藉由搬送滾輪來依序作搬送並將化學研磨液作噴灑之單片式化學研磨。 In order to reduce the thickness of the glass substrate, it is generally necessary to chemically polish the glass substrate using a chemical polishing liquid containing hydrofluoric acid. As such a chemical polishing treatment, a batch type chemical polishing in which a glass substrate to be treated is immersed in a tank filled with a chemical polishing liquid for a specific period of time, and a glass substrate to be processed are conveyed by a transfer roller A single-piece chemical polishing in which the chemical slurry is sprayed and sprayed.
在此些之化學研磨方式中,批次方式之研磨,係為藉由將應處理之玻璃基板在研磨液浴槽中浸漬特定之時間來將玻璃基板薄板化為所期望之板厚者,而有著能夠一次對於多量之玻璃基板進行處理的優點。但是,在批次方式之研磨中,係至少存在有以下之3個的問題點。 In the chemical polishing method, the batch method is performed by immersing the glass substrate to be treated in the polishing bath for a specific period of time to thin the glass substrate to a desired thickness. The advantage of being able to process a large amount of glass substrate at a time. However, in the batch type polishing, there are at least three following problem points.
首先,在批次方式之研磨中,由於研磨液浴槽係為對於上方而開放之構造,因此係有著研磨液浴槽之周圍會成為高濃度之氟酸氛圍的問題。特別是,當對於研磨液浴槽之研磨液而進行起泡處理的情況時,係有著氣體狀之氟酸容易朝向周圍擴散的問題點。在此種氟酸氛圍中而進行作業的作業員,若是不在身上附加適當之保護裝備並進行作業,則會有對於健康有所損害之虞。因此,對於作業員所 發給之保護裝備的成本係變高。 First, in the batch type polishing, since the polishing liquid bath is a structure that is open to the upper side, there is a problem that the periphery of the polishing liquid bath becomes a high-concentration hydrofluoric acid atmosphere. In particular, when the foaming treatment is performed on the polishing liquid in the polishing bath, there is a problem that the gaseous fluoric acid is likely to diffuse toward the surroundings. Workers who work in such a fluoric acid atmosphere may have health problems if they do not attach appropriate protective equipment to their work. Therefore, for the operator The cost of the protective equipment issued is higher.
又,在批次方式之研磨中,為了將研磨液浴槽之周圍的高濃度之氟酸氛圍消除,係成為需要強力之洗氣器等的排氣設備,並使設備成本增大。進而,由於會起因於氟酸氣體而使設備之腐蝕成為容易發生,因此,亦有著下述的問題:亦即是,為了施加適當的防蝕處理,會耗費成本,並且設備之交換頻度會變多,而耗費成本。 Further, in the batch type polishing, in order to eliminate the high-concentration hydrofluoric acid atmosphere around the polishing liquid bath, it is an exhaust device requiring a strong scrubber or the like, and the equipment cost is increased. Further, since corrosion of the device is likely to occur due to the hydrofluoric acid gas, there is also a problem that, in order to apply an appropriate anti-corrosion treatment, cost is incurred, and the frequency of exchange of the device is increased. And cost.
進而,亦成為需要使用用以將玻璃基板作支持之治具。因此,係與上述之批次式之化學研磨裝置相同的準備治具之費用係為高,並且亦有著容易在玻璃基板處而產生治具之痕跡的問題。 Further, it has become a need to use a jig for supporting a glass substrate. Therefore, the cost of preparing the jig is the same as that of the above-described chemical polishing device of the batch type, and there is also a problem that the trace of the jig is easily generated at the glass substrate.
因此,近年來,係有著使用單片方式之化學研磨的情況。例如,在先前技術中,係存在有下述一般之平面面板顯示器玻璃基板蝕刻裝置,其係構成為:藉由能夠使玻璃基板作附著之治具,來將玻璃基板作縱向支持,並一面搬送此治具一面對於玻璃基板噴射化學研磨液(例如,參考專利文獻1)。 Therefore, in recent years, there has been a case of chemical polishing using a one-piece method. For example, in the prior art, there is a general flat panel display glass substrate etching apparatus which is configured such that a glass substrate can be vertically supported by a jig capable of attaching a glass substrate. This jig is sprayed with a chemical polishing liquid on the glass substrate (for example, refer to Patent Document 1).
〔專利文獻1〕日本特開2008-266135號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-266135
然而,在專利文獻1所記載之技術中,係依然必須要 使用用以將玻璃基板作支持之治具。因此,係與上述之批次式之化學研磨裝置相同的準備治具之費用係為高,並且亦有著容易在玻璃基板處而產生治具之痕跡的問題。由於若是在玻璃基板處產生有治具痕跡,則對於進行有效率之去角設計一事而言係變得極為困難,因此,係有著使去角效率降低之問題。 However, in the technique described in Patent Document 1, it is still necessary A jig for supporting the glass substrate is used. Therefore, the cost of preparing the jig is the same as that of the above-described chemical polishing device of the batch type, and there is also a problem that the trace of the jig is easily generated at the glass substrate. Since the jig trace is generated at the glass substrate, it is extremely difficult to carry out efficient chamfering design, and therefore, there is a problem that the deangulation efficiency is lowered.
本發明,係為有鑑於上述之課題而進行者,並提供一種:能夠並不使用治具地而對於玻璃基板施加化學研磨處理之單片式的化學研磨裝置。 The present invention has been made in view of the above problems, and provides a one-piece chemical polishing apparatus capable of applying a chemical polishing treatment to a glass substrate without using a jig.
本發明之化學研磨裝置,係構成為對於被連續性搬送而來之複數的玻璃基板而進行化學研磨處理。此化學研磨裝置,係至少具備有搬送部以及研磨處理部。搬送部,係具備有構成為一面支持玻璃基板之底面一面朝向水平方向作搬送的複數之搬送滾輪。研磨處理部,係構成為對於藉由搬送部所搬送而來之玻璃基板,而噴射化學研磨液並將玻璃基板薄型化。研磨處理部,係具備有複數之處理腔以及複數之連結部。 The chemical polishing apparatus of the present invention is configured to perform a chemical polishing treatment on a plurality of glass substrates that are continuously conveyed. This chemical polishing apparatus includes at least a conveying unit and a polishing unit. The transport unit includes a plurality of transport rollers that are configured to support the bottom surface of the glass substrate and are transported in the horizontal direction. The polishing processing unit is configured to eject a chemical polishing liquid and reduce the thickness of the glass substrate with respect to the glass substrate conveyed by the conveying unit. The polishing processing unit includes a plurality of processing chambers and a plurality of connecting portions.
複數之處理腔,係構成為分別對於玻璃基板而噴射同一組成之化學研磨液。複數之連結部,係構成為將各處理腔作連結。複數之處理腔之各個,係具備有能夠在與玻璃基板之搬送方向相正交的方向上而搖動之噴射噴嘴。 The plurality of processing chambers are configured to eject a chemical polishing liquid of the same composition for each of the glass substrates. The plurality of connecting portions are configured to connect the processing chambers. Each of the plurality of processing chambers is provided with an injection nozzle that can be swung in a direction orthogonal to the conveying direction of the glass substrate.
在此構成中,由於係採用藉由複數之搬送滾輪來一面 將玻璃基板作直接性支持一面作搬送之構成,因此,係成為不需要藉由治具來支持玻璃基板。又,藉由故意設置進行相同之處理的複數之處理腔,由於係成為能夠對於單一之處理腔的長度作抑制,因此,係成為能夠將被配置在各處理腔中之噴射管的熱膨脹之影響降低,並謀求噴射噴嘴之搖動的順暢化。 In this configuration, since one of the plurality of transport rollers is used Since the glass substrate is configured to be directly supported for transport, it is not necessary to support the glass substrate by the jig. Further, by intentionally providing a plurality of processing chambers for performing the same processing, since the length of the single processing chamber can be suppressed, it is possible to influence the thermal expansion of the ejection tubes disposed in the respective processing chambers. Lowering and purifying the shaking of the spray nozzle.
若依據上述之本發明,則係成為能夠並不使用治具地而對於玻璃基板施加化學研磨處理。 According to the invention as described above, it is possible to apply a chemical polishing treatment to the glass substrate without using the jig.
圖1,係為對於本發明之實施形態的其中一例之單片式化學研磨裝置10之外觀作展示的圖。又,圖2以及圖3,係為對於化學研磨裝置10之概略構成作展示的圖。如圖1~圖3中所示一般,化學研磨裝置10,係具備有:搬入部12、和前置處理腔14、和第1處理腔16、和第2處理腔18、和第3處理腔20、和第4處理腔22、和第1中繼部28、和第2中繼部30、和第3中繼部32、和水洗腔24、和搬出部26、和處理液收容部42、和處理液供給部44、以及水供給部46。 Fig. 1 is a view showing the appearance of a one-piece chemical polishing apparatus 10 as an example of an embodiment of the present invention. 2 and 3 are views showing a schematic configuration of the chemical polishing apparatus 10. As shown in FIGS. 1 to 3, the chemical polishing apparatus 10 is generally provided with a loading unit 12, a pre-processing chamber 14, and a first processing chamber 16, a second processing chamber 18, and a third processing chamber. 20, the fourth processing chamber 22, the first relay portion 28, the second relay portion 30, and the third relay portion 32, and the water washing chamber 24, the carry-out portion 26, and the processing liquid storage portion 42, The treatment liquid supply unit 44 and the water supply unit 46.
搬入部12,係構成為能夠接收藉由以作業員所進行之手動作業或者是以機器人等所進行之自動作業而搬入的應進行薄型化處理之玻璃基板100。前置處理腔14,係構成 為接收從搬入部12所搬送而來之玻璃基板100。第1處理腔16,係構成為分別對於玻璃基板100之上下面而噴射化學研磨液並將玻璃基板薄型化。第2處理腔18、第3處理腔20以及第4處理腔22,係分別構成為對於玻璃基板之上下面而噴射與第1處理腔16同一組成之化學研磨液並將玻璃基板更進一步薄型化。第1中繼部28、第2中繼部30以及第3中繼部32,係分別構成為將複數之處理腔作連結。水洗腔24,係構成為將經過了第4處理腔22之玻璃基板100作水洗。搬出部26,係構成為能夠將經過了化學研磨處理以及水洗處理之玻璃基板100取出。到達了搬出部26處之玻璃基板100,係藉由以作業員所進行之手動作業或者是以機器人等所進行之自動作業而被從化學研磨裝置10取出並作回收。之後,玻璃基板100,當需要進行更進一步之薄型化的情況時,係再度被導入至化學研磨裝置10中,另一方面,當並不需要進行更進一步之薄型化的情況時,則係移行至成膜工程等之後段的工程處。 The loading unit 12 is configured to be capable of receiving a glass substrate 100 to be subjected to a thinning process by a manual operation by a worker or an automatic operation performed by a robot or the like. Pre-processing chamber 14, system composition The glass substrate 100 that has been transported from the loading unit 12 is received. The first processing chamber 16 is configured to eject a chemical polishing liquid on the upper and lower surfaces of the glass substrate 100 to reduce the thickness of the glass substrate. The second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 are configured to eject a chemical polishing liquid having the same composition as that of the first processing chamber 16 on the upper and lower surfaces of the glass substrate, and to further reduce the thickness of the glass substrate. . The first relay unit 28, the second relay unit 30, and the third relay unit 32 are each configured to connect a plurality of processing chambers. The water washing chamber 24 is configured to wash the glass substrate 100 that has passed through the fourth processing chamber 22. The carry-out unit 26 is configured to take out the glass substrate 100 subjected to the chemical polishing treatment and the water washing treatment. The glass substrate 100 that has reached the carry-out portion 26 is taken out from the chemical polishing apparatus 10 and collected by manual work by a worker or by an automatic operation by a robot or the like. After that, when the glass substrate 100 needs to be further thinned, it is introduced into the chemical polishing apparatus 10 again. On the other hand, when it is not necessary to further reduce the thickness, the system moves. To the engineering office in the latter part of the film forming project.
處理液收容部42,係經由第1處理腔16、第2處理腔18、第3處理腔20、第4處理腔22以及回收管線420而被作連接。處理液供給部44,係經由供液管線440,而被連接於第1處理腔16、第2處理腔18、第3處理腔20、第4處理腔22、第1中繼部28、第2中繼部30、以及第3中繼部32處。水供給部46,係經由供水管線460而被與前置處理腔14以及水洗腔24作連接。另外,在圖1中,關於化學研磨裝置10之回收管線420、供液管線 440以及洗淨水之供水管線460,係省略圖示。 The processing liquid storage unit 42 is connected via the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, and the recovery line 420. The processing liquid supply unit 44 is connected to the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, the first relay unit 28, and the second via the liquid supply line 440. The relay unit 30 and the third relay unit 32 are provided. The water supply unit 46 is connected to the pre-treatment chamber 14 and the water washing chamber 24 via the water supply line 460. In addition, in FIG. 1, the recovery line 420 and the supply line of the chemical polishing apparatus 10 are provided. 440 and the water supply line 460 for washing water are omitted.
在上述之化學研磨裝置10中,除了對於前置處理腔14之導入口200、從水洗腔24而來之導出口300以及後述之曲柄機構36之一部份的作業空間以外,前置處理腔14、第1處理腔16、第2處理腔18、第3處理腔20、第4處理腔22、第1中繼部28、第2中繼部30、第3中繼部32、以及水洗腔24,係作為全體而氣密性地且水密性地被作閉塞。導入口200以及導出口300,係呈現較玻璃基板100之板厚而更略高並且較玻璃基板100之橫寬幅而更略廣的細縫形狀。又,係貫通各部而在同一平面上被配置有多數之搬送滾輪50。各搬送滾輪50,係構成一面支持玻璃基板100之底面一面朝向圖示之右方向作搬送的搬送路徑。 In the chemical polishing apparatus 10 described above, the pre-processing chamber is provided in addition to the working space of the inlet port 200 of the pre-processing chamber 14, the outlet port 300 from the water washing chamber 24, and a portion of the crank mechanism 36 to be described later. 14. The first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, the first relay portion 28, the second relay portion 30, the third relay portion 32, and the water washing chamber 24 is occluded airtightly and watertightly as a whole. The inlet 200 and the outlet 300 are in a slit shape which is slightly larger than the thickness of the glass substrate 100 and which is slightly wider than the width of the glass substrate 100. Further, a plurality of transport rollers 50 are disposed on the same plane through the respective portions. Each of the transport rollers 50 constitutes a transport path that supports the bottom surface of the glass substrate 100 while being transported in the right direction of the drawing.
於此,搬送速度,係以設定為100~800mm/分為理想,更理想,係設定為300~550mm/分。又,在第1處理腔16、第2處理腔18、第3處理腔20以及第4處理腔22處之處理時間,於本實施形態中,係設定為合計20分鐘程度,但是,係並不被限定於此。又,若是超過上述之範圍而使搬送速度變得過慢,則不但是會使生產效率惡化,並且化學研磨液也會容易滯留在玻璃基板100上並對於均一之化學研磨造成阻礙,在最糟糕的情況時,還會有導致玻璃基板100之碎裂之虞。另一方面,在相同之裝置規模下,要是想提高搬送速度,則用以實現此目標之液組成的最適化係為困難,其結果,係難以實現均質性之化學 研磨。 Here, the transport speed is preferably set to 100 to 800 mm/minor, more preferably, it is set to 300 to 550 mm/min. Further, in the present embodiment, the processing time in the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 is set to a total of 20 minutes, but it is not It is limited to this. Moreover, if the conveyance speed is too slow if it exceeds the above range, the production efficiency is deteriorated, and the chemical polishing liquid is likely to remain on the glass substrate 100 and hinder the uniform chemical polishing, which is the worst. In the case of the case, there is a possibility that the glass substrate 100 is broken. On the other hand, under the same device scale, if it is desired to increase the transport speed, it is difficult to optimize the liquid composition for achieving this target, and as a result, it is difficult to achieve homogenization chemistry. Grinding.
在化學研磨裝置10處而被進行薄型化處理之玻璃基板100,雖並未被特別限定,但是,係構成為就算是針對G8尺寸之四方裁切(1080×1230mm)以及G6尺寸(1500×1800mm)等的大型玻璃基板,亦能夠將其之上下兩面作均質之研磨的化學研磨裝置10。又,化學研磨裝置10,係構成為不需要使用治具或載具等而將玻璃基板100直接性地藉由搬送滾輪50來作搬送。 The glass substrate 100 which is thinned in the chemical polishing apparatus 10 is not particularly limited, but is configured to be cut (1080×1230 mm) and G6 size (1500×1800 mm) for the G8 size. A large-sized glass substrate such as the same can also be used as a chemical polishing apparatus 10 for uniformly grinding the upper and lower surfaces thereof. Further, the chemical polishing apparatus 10 is configured such that the glass substrate 100 is directly transported by the transport roller 50 without using a jig or a carrier.
如同上述一般,第1處理腔16、第2處理腔18、第3處理腔20、第4處理腔22、第1中繼部28、第2中繼部30、以及第3中繼部32,係經由供液管線440,而與被作了溫度管理之處理液供給部44相通連,處理液供給部44之化學研磨液,係成為以40~42℃程度而被供給至各腔中。於此,化學研磨液之組成,係以設為氟酸1~20重量%、鹽酸0~10重量%且剩餘為水的液組成為理想。 As described above, the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, the first relay unit 28, the second relay unit 30, and the third relay unit 32, The chemical polishing liquid of the processing liquid supply unit 44 is supplied to the respective chambers at a temperature of 40 to 42 ° C via the liquid supply line 440 in communication with the temperature-treated processing liquid supply unit 44. Here, the composition of the chemical polishing liquid is preferably a liquid composition of 1 to 20% by weight of hydrofluoric acid, 0 to 10% by weight of hydrochloric acid, and the remainder being water.
又,前置處理腔14以及水洗腔24,係經由供水管線460而與水供給部46相通連,並成為將洗淨水供給至各腔中。另外,從前置處理腔14和水洗腔24所排出之洗淨排水,係被排出至廢水處理設備處。 Further, the pre-treatment chamber 14 and the water washing chamber 24 are connected to the water supply unit 46 via the water supply line 460, and the washing water is supplied to the respective chambers. Further, the washing drainage discharged from the pre-treatment chamber 14 and the washing chamber 24 is discharged to the wastewater treatment facility.
另一方面,如同上述一般,第1處理腔16、第2處理腔18、第3處理腔20以及第4處理腔22之底部,係經由回收管線420而與處理液收容部42相通連,並成為使研磨處理水被作回收。第1中繼部28、第2中繼部30以及第3中繼部32之底部,由於係分別具備有朝向相鄰接之 處理腔而傾斜的底部,因此,第1中繼部28、第2中繼部30以及第3中繼部32內之處理液,係順暢地被導引至相鄰接之處理腔中。另外,被作了回收的研磨處理水,在經過了反應生成物的沈澱和其他處理之後,若是身為能夠進行再利用的狀態,則係被送至處理液供給部44處,另一方面,當身為無法進行再利用之狀態的情況時,則係作為濃厚廢液而被移行至廢液處理工程處。 On the other hand, as described above, the bottoms of the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 are connected to the processing liquid storage portion 42 via the recovery line 420, and It is made that the water to be treated is recovered. The bottoms of the first relay unit 28, the second relay unit 30, and the third relay unit 32 are respectively provided with adjacent ones. Since the bottom of the chamber is inclined, the processing liquid in the first relay unit 28, the second relay unit 30, and the third relay unit 32 is smoothly guided to the adjacent processing chambers. In addition, after the precipitation of the reaction product and other treatments have been carried out, it is sent to the treatment liquid supply unit 44 if it is in a state in which it can be reused. When it is in a state where it cannot be reused, it is transferred to the waste disposal facility as a thick waste liquid.
又,如圖3中所示一般,前置處理腔14、第1處理腔16、第2處理腔18、第3處理腔20、第4處理腔22以及水洗腔24,係經由排氣管線340而與排氣部34相通連,並成為使各腔之內部氣體被吸引至排氣部34處。於此,由於排氣管線340係恆常性地起作用,因此,朝向前置處理腔14之導入口200、從水洗腔24而來之導出口300、被形成於曲柄機構36之一部份處的開口,係成為被維持於負壓狀態,而不會有處理氣體通過此些之開口而露出的情形。 Further, as shown in FIG. 3, the pre-processing chamber 14, the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, and the water washing chamber 24 are generally via an exhaust line 340. The gas is connected to the exhaust portion 34, and the internal gas of each chamber is attracted to the exhaust portion 34. Here, since the exhaust line 340 functions constantly, the inlet port 200 toward the pretreatment chamber 14 and the outlet port 300 from the water washing chamber 24 are formed in a part of the crank mechanism 36. The opening is maintained in a negative pressure state without the treatment gas being exposed through the openings.
如同圖4以及圖5中所示一般,在第1處理腔16、第2處理腔18、第3處理腔20、第4處理腔22以及水洗腔24處,係於搬送滾輪50之上下位置處,而分別被配置有在玻璃基板100之搬送方向上而延伸之一群(10根)的噴射管444(444U、444L)。各噴射管444,係為由氯化乙烯或者是TEFLON(登記商標)所成之中空的樹脂管,在1根的噴射管處,係一列地被形成有複數個的噴射噴嘴446。而後,係從被配置在上側處之上側噴射管444U而對 於玻璃基板100之上面噴射化學研磨液,並且從被配置在下側處之下側噴射管444L而對於玻璃基板100之底面噴射化學研磨液。另一方面,係從被配置在水洗腔24處之上側噴射管242U而對於玻璃基板之上面噴射洗淨水,並且從下側噴射管242L而對於玻璃基板100之底面噴射洗淨水。進而,在第1中繼部28、第2中繼部30以及第3中繼部32處,係分別被設置有噴射管282(282U、282L)、噴射管302(302U、302L)以及噴射管322(322U、322L),並將與第1~第4處理腔18、20、22、24同一組成之化學研磨液噴射至玻璃基板100之上面以及底面處。 As shown in FIG. 4 and FIG. 5, in the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, and the water washing chamber 24, at the upper and lower positions of the conveying roller 50 Each of the plurality of injection tubes 444 (444U, 444L) extending in the transport direction of the glass substrate 100 is disposed. Each of the injection pipes 444 is a hollow resin pipe made of vinyl chloride or TEFLON (registered trademark), and a plurality of injection nozzles 446 are formed in a row at one injection pipe. Then, from the upper side of the spray pipe 444U disposed at the upper side, A chemical polishing liquid is sprayed on the glass substrate 100, and a chemical polishing liquid is sprayed on the bottom surface of the glass substrate 100 from the lower side injection tube 444L disposed at the lower side. On the other hand, the washing water is sprayed from the upper side spray pipe 242U disposed at the water washing chamber 24, and the washing water is sprayed from the lower side spray pipe 242L to the bottom surface of the glass substrate 100. Further, the first relay unit 28, the second relay unit 30, and the third relay unit 32 are provided with injection pipes 282 (282U, 282L), injection pipes 302 (302U, 302L), and injection pipes, respectively. 322 (322U, 322L), and a chemical polishing liquid having the same composition as the first to fourth processing chambers 18, 20, 22, and 24 is sprayed onto the upper surface and the bottom surface of the glass substrate 100.
被配置在第1中繼部28、第2中繼部30以及第3中繼部32處之噴射管282(282U、282L)、噴射管302(302U、302L)以及噴射管322(322U、322L),還有被配置在水洗腔24處之噴射管(242U、242L),係被保持為固定狀態。另一方面,被配置在第1處理腔16、第2處理腔18、第3處理腔20、第4處理腔22處之各噴射管444,係被構成為能夠藉由曲柄機構36來作搖動。 Injection tubes 282 (282U, 282L), injection tubes 302 (302U, 302L), and injection tubes 322 (322U, 322L) disposed in the first relay unit 28, the second relay unit 30, and the third relay unit 32. Further, the injection pipes (242U, 242L) disposed at the water washing chamber 24 are maintained in a fixed state. On the other hand, each of the injection tubes 444 disposed in the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 is configured to be shaken by the crank mechanism 36. .
如同圖5中所示一般,在本實施形態中,第1處理腔16、第2處理腔18、第3處理腔20、以及第4處理腔22,係於玻璃基板100之上側以及下側處而分別被配置有10根的噴射管444(444U、444L)。圖5(A),係為對於被配置在玻璃基板之下方處的噴射管444從上方而作了描繪的平面圖,在各噴射管444處,例如係被形成有8個 的噴射噴嘴446。 As shown in FIG. 5, in the present embodiment, the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 are attached to the upper side and the lower side of the glass substrate 100. Each of the ten injection pipes 444 (444U, 444L) is disposed. Fig. 5(A) is a plan view showing the injection pipe 444 disposed below the glass substrate from above, and at each of the injection pipes 444, for example, eight are formed. Spray nozzle 446.
各噴射管444(444U、444L),係使其之前端側(圖示左側)被作閉塞,另一方面,在其之基端側處,係被設置有壓力控制部。壓力控制部,係藉由與噴射管444(444U、444L)相同數量(10個)的開閉閥442所構成,並成為能夠藉由對於各開閉閥442之開度作調整來任意地設定供給至各噴射管444(444U、444L)處之化學研磨液的液壓。另外,被供給至各噴射管444(444U、444L)處之化學研磨液的液壓,係可藉由被配置在化學研磨裝置10之上面處的計器38來作確認。 Each of the injection pipes 444 (444U, 444L) is closed on the front end side (left side in the drawing), and a pressure control portion is provided on the base end side thereof. The pressure control unit is configured by the same number (10) of opening and closing valves 442 as the injection pipes 444 (444U, 444L), and can be arbitrarily set and supplied by adjusting the opening degree of each of the opening and closing valves 442. The hydraulic pressure of the chemical slurry at each of the injection tubes 444 (444U, 444L). Further, the hydraulic pressure of the chemical polishing liquid supplied to each of the injection pipes 444 (444U, 444L) can be confirmed by the gauge 38 disposed on the upper surface of the chemical polishing apparatus 10.
在此實施例中,相較於周邊位置之噴射管444(444U、444L),中央位置之噴射管444(444U、444L)之液壓係被設定為更些許大,朝向玻璃基板100之中央位置的接觸壓和噴射量,係被設定為較對於玻璃基板100之周邊位置的接觸壓和噴射量而更些許高。因此,被噴射至玻璃基板100之中央位置處的化學研磨液,係成為朝向玻璃基板之周邊位置而順暢地移動,化學研磨液係成為難以在玻璃基板100之上面滯留。其結果,係成為在玻璃基板100之全面上而使略等量之化學研磨液起作用,而成為易於將玻璃基板100全面作均一的研磨。另外,當就算是並不使噴射管444(444U、444L)之液壓在寬幅方向上而變化也能夠使化學研磨液並不會滯留在玻璃基板100之上面的情況時,則並不需要特地使噴射管444(444U、444L)之液壓在寬幅方向上而變化,只要將全部的噴射管444 (444U、444L)之液壓設定為均一即可。 In this embodiment, the hydraulic pressure of the injection pipe 444 (444U, 444L) at the center position is set to be slightly larger than the spray pipe 444 (444U, 444L) at the peripheral position, toward the center of the glass substrate 100. The contact pressure and the ejection amount are set to be slightly higher than the contact pressure and the ejection amount to the peripheral position of the glass substrate 100. Therefore, the chemical polishing liquid that is ejected to the center of the glass substrate 100 smoothly moves toward the peripheral position of the glass substrate, and the chemical polishing liquid becomes difficult to remain on the upper surface of the glass substrate 100. As a result, a slight amount of the chemical polishing liquid acts on the entire surface of the glass substrate 100, and it is easy to uniformly polish the glass substrate 100 in a uniform manner. Further, even if the hydraulic pressure of the injection pipe 444 (444U, 444L) is not changed in the wide direction, the chemical polishing liquid can be prevented from remaining on the glass substrate 100, and it is not necessary to specifically The hydraulic pressure of the injection pipe 444 (444U, 444L) is varied in the wide direction as long as all the injection pipes 444 are to be used. The hydraulic pressure of (444U, 444L) can be set to be uniform.
又,各噴射管444(444U、444L),係藉由將其之兩端藉由軸承等來可旋轉地作軸支持,而構成為可藉由曲柄機構36來作略±30°之搖動(oscillation)(參考圖5(B))。另外,圖5(B),係為對於搖動角度作展示者,而並非為對於化學研磨液之噴射範圍作展示者。亦即是,由於化學研磨液係從噴射管444之噴射噴嘴446而以喇叭狀作噴出,因此其之噴射範圍係較搖動角度而更廣。 Further, each of the injection pipes 444 (444U, 444L) is rotatably supported by a shaft or the like by a bearing or the like, and is configured to be slightly shaken by ±30° by the crank mechanism 36 ( Oscillation) (Refer to Figure 5(B)). In addition, FIG. 5(B) is a display for the shaking angle, and is not intended to be a display for the range of the chemical polishing liquid. That is, since the chemical polishing liquid is ejected from the injection nozzle 446 of the injection pipe 444 in a flared manner, the injection range thereof is wider than the shaking angle.
曲柄機構36,係如圖6(A)以及圖6(B)中所示一般,構成為將驅動馬達362之旋轉力變換為使噴射管444(444U、444L)搖動之力並傳導至噴射管444(444U、444L)處。驅動馬達362之旋轉力,係透過傳導臂而作為使搖動臂366搖動之力來傳導至搖動臂366處。搖動臂366,係以可轉動之狀態而被支持在被設置於化學研磨裝置10之內壁部處的支持部368處。 The crank mechanism 36 is generally configured to convert the rotational force of the drive motor 362 into a force for oscillating the injection pipe 444 (444U, 444L) to be transmitted to the injection pipe as shown in FIGS. 6(A) and 6(B). 444 (444U, 444L). The rotational force of the drive motor 362 is transmitted to the swing arm 366 as a force for rocking the swing arm 366 through the conductive arm. The rocking arm 366 is supported in a rotatable state at a support portion 368 provided at an inner wall portion of the chemical polishing apparatus 10.
另一方面,各噴射管444(444U、444L)之端部,係貫通處理腔之隔壁,在位置於處理腔之外側處的部分處,係被安裝有用以傳導在噴射管444(444U、444L)之搖動中所必要的轉矩之轉矩傳導臂372、376。轉矩傳導臂372、376,係分別以可轉動之狀態而被支持於保持臂370、374處。保持臂370、374,係以可轉動並且可滑動的狀態而被連結於搖動臂366處。 On the other hand, the end portions of the respective injection pipes 444 (444U, 444L) pass through the partition wall of the processing chamber, and are installed at the portion located at the outer side of the processing chamber to be used for conduction in the injection pipe 444 (444U, 444L). The torque transmitting arms 372, 376 of the torque necessary for the shaking. The torque transmitting arms 372, 376 are respectively supported by the holding arms 370, 374 in a rotatable state. The holding arms 370, 374 are coupled to the rocking arm 366 in a rotatable and slidable state.
若是藉由驅動馬達362之旋轉力而使搖動臂366搖動,則與搖動臂366相連動地,保持臂370、374係如同圖 中之箭頭所示一般地而搖動。從保持臂370而來之力,係經由轉矩傳導臂372而作為轉矩來傳導至上側噴射管444U處。又,從保持臂374而來之力,係經由轉矩傳導臂376而作為轉矩來傳導至下側噴射管444L處。其結果,如同圖6(A)以及圖6(B)中所示一般,上側噴射管444U以及下側噴射管444L,係成為朝向與玻璃基板100之搬送方向相正交之方並且互為相反之方向,而作約±30°之旋轉。另外,驅動馬達362之旋轉數,係對於噴射管444(444U、444L)之搖動次數作規定,但是,在本實施形態中,係將驅動馬達之旋轉數設定為10~30rpm的程度。 If the rocking arm 366 is shaken by the rotational force of the driving motor 362, it is connected to the rocking arm 366, and the holding arms 370, 374 are like a figure. The arrow in the middle is generally shaken. The force from the holding arm 370 is transmitted to the upper injection pipe 444U as torque via the torque transmitting arm 372. Further, the force from the holding arm 374 is transmitted to the lower injection pipe 444L as torque via the torque transmission arm 376. As a result, as shown in FIG. 6(A) and FIG. 6(B), the upper side injection pipe 444U and the lower side injection pipe 444L are oriented in a direction orthogonal to the conveying direction of the glass substrate 100 and are opposite to each other. The direction is rotated by about ±30°. Further, the number of rotations of the drive motor 362 is defined by the number of times of the swing of the injection pipe 444 (444U, 444L). However, in the present embodiment, the number of rotations of the drive motor is set to be about 10 to 30 rpm.
在上側之噴射管444U處,係於其之下面被形成有噴射噴嘴446U,在下側之噴射管444L處,係於其之上面被形成有噴射噴嘴446L,各噴射噴嘴,係成為一面作約±30°之旋轉,一面將化學研磨液噴射至玻璃基板之上下面處(參考圖5(B))。 An injection nozzle 446U is formed on the lower side of the injection pipe 444U, and an injection nozzle 446L is formed on the lower side of the injection pipe 444L, and each of the injection nozzles is formed on one side. The chemical polishing liquid was sprayed onto the upper side of the glass substrate while rotating at 30° (refer to FIG. 5(B)).
另外,在本實施形態中,係故意將藉由同一之液組成而實行同樣的化學研磨之第1處理腔16、第2處理腔18、第3處理腔20以及第4處理腔22相互分割地作設置。其理由,係在於為了藉由對於噴射管444(444U、444L)之長度作抑制來防止噴射管444(444U、444L)之撓折,並且使噴射管444(444U、444L)順暢地作搖動之故。又,係為了將由於噴射管444(444U、444L)之熱膨脹所導致的影響抑制為更小之故。藉由採用此種構成,係成為能夠將噴射管444(444U、444L)和玻璃基板100之 間的距離維持為均一,並成為容易對於被噴射至玻璃基板100處之化學研磨液的液壓作調整。又,藉由使噴射管444(444U、444L)作順暢的搖動,係成為能夠使化學研磨液從玻璃基板100之上面而順暢地流下,因此化學研磨液係成為難以滯留在玻璃基板100之上面。另外,噴射管444(444U、444L)之長度,雖然亦與管徑(送液量)有所關連,但是,一般而言,係以抑制在2.5m以下為理想,更理想係抑制在2m以下。 Further, in the present embodiment, the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 which are subjected to the same chemical polishing by the same liquid composition are intentionally divided. Make settings. The reason for this is that the ejection tube 444 (444U, 444L) is prevented from being flexed by suppressing the length of the ejection tube 444 (444U, 444L), and the ejection tube 444 (444U, 444L) is smoothly shaken. Therefore. Further, in order to suppress the influence due to thermal expansion of the injection pipe 444 (444U, 444L) to be smaller. By adopting such a configuration, it is possible to enable the ejection tubes 444 (444U, 444L) and the glass substrate 100. The distance between them is maintained to be uniform, and it becomes easy to adjust the hydraulic pressure of the chemical polishing liquid sprayed to the glass substrate 100. Further, by smoothly oscillating the ejecting tubes 444 (444U, 444L), the chemical polishing liquid can smoothly flow from the upper surface of the glass substrate 100, so that the chemical polishing liquid is hard to stay on the glass substrate 100. . In addition, although the length of the injection pipe 444 (444U, 444L) is related to the pipe diameter (liquid supply amount), it is generally preferably suppressed to 2.5 m or less, and more preferably 2 m or less. .
為了以高速來對於玻璃基板100進行化學研磨,係有必要將加溫狀態之化學研磨液的送液量增加,但是,藉由將噴射管444(444U、444L)之長度抑制為適當的長度,不會有使驅動馬達362過度地大型化的情況,並且能夠藉由簡單的機構來使複數之噴射管444(444U、444L)順暢地作搖動。 In order to chemically polish the glass substrate 100 at a high speed, it is necessary to increase the liquid amount of the chemical polishing liquid in the heated state. However, by suppressing the length of the injection tube 444 (444U, 444L) to an appropriate length, There is no case where the drive motor 362 is excessively enlarged, and the plurality of injection pipes 444 (444U, 444L) can be smoothly shaken by a simple mechanism.
接著,使用圖7(A)~圖7(C),針對前置處理腔14之構成作說明。在前置處理腔14處,係如同前述一般,近接於第1處理腔16,而被配置有使噴射管444(444U、444L)作搖動之曲柄機構36。除了上述構成以外,在前置處理腔14處,係於朝向第1處理腔16之玻璃基板100的導入口處,被配置有接收玻璃基板100之對向滾輪146、和對於玻璃基板100之上下面而噴射水之水洗噴嘴142、144。水洗噴嘴142、144,係涵蓋與玻璃基板100之搬送方向相正交的方向(寬幅方向)之全區域,而以特定之間隔作複數配備。於此,玻璃基板100,係被設 定為會在對向滾輪146和搬送滾輪50處而被輕柔地作保持並導入至第1處理腔16中一般的接觸壓。 Next, the configuration of the pre-processing chamber 14 will be described with reference to FIGS. 7(A) to 7(C). At the pre-processing chamber 14, as in the foregoing, it is adjacent to the first processing chamber 16, and is provided with a crank mechanism 36 for oscillating the injection tubes 444 (444U, 444L). In addition to the above configuration, the pre-processing chamber 14 is disposed at the introduction port of the glass substrate 100 facing the first processing chamber 16, and is disposed on the opposite roller 146 for receiving the glass substrate 100, and above the glass substrate 100. Next, the water washing nozzles 142, 144 are sprayed. The water washing nozzles 142 and 144 cover the entire area in the direction (wide direction) orthogonal to the conveying direction of the glass substrate 100, and are provided in plural at specific intervals. Here, the glass substrate 100 is provided It is set as a contact pressure which is gently held at the opposite roller 146 and the conveying roller 50 and introduced into the first processing chamber 16.
又,水洗噴嘴142、144,係設定為會朝向對於玻璃基板100之第1處理腔16的導入口而噴射水。因此,被導入至第1處理腔16中之玻璃基板100,係成為充分作了浸濕的狀態,而防止被進行有非均一性之初期蝕刻。亦即是,第1處理腔16,由於係為氟酸氣體氛圍,因此若是玻璃基板100之表面係為乾燥狀態,則會有被氟酸氣體作不均一之侵蝕的危險,但是,在本實施形態中,由於玻璃基板100之表面係被水所保護,因此,之後,在第1處理腔16中,係開始均質性之蝕刻。 Further, the water washing nozzles 142 and 144 are set to spray water toward the inlet of the first processing chamber 16 of the glass substrate 100. Therefore, the glass substrate 100 introduced into the first processing chamber 16 is sufficiently wetted to prevent initial etching with non-uniformity. In other words, since the first processing chamber 16 is in a fluoric acid gas atmosphere, if the surface of the glass substrate 100 is in a dry state, the fluorine acid gas may be eroded by unevenness. However, in the present embodiment, In the form, since the surface of the glass substrate 100 is protected by water, subsequent homogenization etching is started in the first processing chamber 16.
在本實施形態中,如同圖7(A)~圖7(C)中所示一般,水洗噴嘴142係構成為朝向正下方而噴射水,另一方面,水洗噴嘴144係構成為朝向上方且朝向玻璃基板100之搬送路徑的上游側而斜方向地噴射水。將水洗噴嘴144構成為朝向斜上方而噴射水的結果,當玻璃基板100接近水洗噴嘴142、144時,如同圖7(A)以及圖7(B)中所示一般,係成為能夠從水洗噴嘴144而對於玻璃基板100之上面供給水。因此,係成為能夠在玻璃基板100之上面而迅速地形成用以保護其免於受到氟酸氣體之侵蝕的水膜。另外,若是玻璃基板100接近水洗噴嘴144,則由於從水洗噴嘴144所噴射之水係成為接觸到玻璃基板100之底面,因此,係能夠藉由水洗噴嘴144而將玻璃基板100之底面適當地洗淨並且適當地使其濕潤。 In the present embodiment, as shown in Figs. 7(A) to 7(C), the water washing nozzle 142 is configured to spray water directly downward, and the water washing nozzle 144 is configured to face upward and toward Water is sprayed obliquely on the upstream side of the conveyance path of the glass substrate 100. The water washing nozzle 144 is configured to spray water toward the obliquely upward direction. When the glass substrate 100 approaches the water washing nozzles 142 and 144, as shown in FIGS. 7(A) and 7(B), it is possible to wash the nozzle from the water. At 144, water is supplied to the upper surface of the glass substrate 100. Therefore, it is possible to rapidly form a water film on the glass substrate 100 to protect it from the attack by the hydrofluoric acid gas. In addition, when the glass substrate 100 approaches the water washing nozzle 144, since the water sprayed from the water washing nozzle 144 comes into contact with the bottom surface of the glass substrate 100, the bottom surface of the glass substrate 100 can be appropriately washed by the water washing nozzle 144. Net and properly moisten it.
如同以上一般,藉由在前置處理腔14處設置水洗噴嘴142、144,係能夠防止乾燥狀態之玻璃基板100暴露在氟酸氣體中並被非均一性地蝕刻的情況。又,由於係防止玻璃基板100以乾燥狀態而被挾持於對向滾輪146以及搬送滾輪50之間的情形,因此,能夠防止在通過對向滾輪146以及搬送滾輪50之間時而於玻璃基板100上產生傷痕或者是造成玻璃基板100污損的情況。 As described above, by providing the water washing nozzles 142, 144 at the pre-processing chamber 14, it is possible to prevent the glass substrate 100 in a dry state from being exposed to the hydrofluoric acid gas and being non-uniformly etched. In addition, since the glass substrate 100 is prevented from being held between the opposing roller 146 and the transport roller 50 in a dry state, it is possible to prevent the glass substrate 100 from passing between the opposing roller 146 and the transport roller 50. A flaw is generated on the surface or the glass substrate 100 is stained.
接著,針對第1中繼部28、第2中繼部30以及第3中繼部32作說明。在第1中繼部28、第2中繼部30以及第3中繼部32處,係分別於搬送路徑之上下位置處,配置有固定狀態之噴射管282、噴射管302以及噴射管322。並且,係從噴射管282、噴射管302、噴射管322而對於玻璃基板100之上下面噴射化學研磨液。在本實施形態中,噴射管282、噴射管302以及噴射管322係分別構成本發明之研磨液噴射手段。 Next, the first relay unit 28, the second relay unit 30, and the third relay unit 32 will be described. In the first relay unit 28, the second relay unit 30, and the third relay unit 32, the injection pipe 282, the injection pipe 302, and the injection pipe 322 in a fixed state are disposed at the upper and lower positions of the conveyance path. Further, a chemical polishing liquid is sprayed from the injection pipe 282, the injection pipe 302, and the injection pipe 322 to the upper and lower surfaces of the glass substrate 100. In the present embodiment, the injection pipe 282, the injection pipe 302, and the injection pipe 322 respectively constitute the polishing liquid spraying means of the present invention.
於此,係亦可考慮將第1中繼部28、第2中繼部30以及第3中繼部32,作為在玻璃研磨處理中之空閒空間,但是,在本實施形態中,係特地在此些之第1中繼部28、第2中繼部30以及第3中繼部32處,亦將同一組成之化學研磨液朝向玻璃基板100作噴射。因此,在通過第1中繼部28、第2中繼部30以及第3中繼部32時,係不會有化學研磨液在玻璃基板上滯留之虞,相反的,在通過第1中繼部28、第2中繼部30以及第3中繼部32時,也不會有玻璃基板100變乾之虞,而能夠實現高品質之玻璃研 磨。另外,第1中繼部28、第2中繼部30以及第3中繼部32之噴射管282、噴射管302以及噴射管322,雖係為固定狀態,但是,係亦可並非設為固定式,而採用搖動式之構成。 In this case, the first relay unit 28, the second relay unit 30, and the third relay unit 32 may be considered as free spaces in the glass polishing process. However, in the present embodiment, the present invention is specifically In the first relay unit 28, the second relay unit 30, and the third relay unit 32, the chemical polishing liquid having the same composition is also ejected toward the glass substrate 100. Therefore, when the first relay unit 28, the second relay unit 30, and the third relay unit 32 are passed, there is no possibility that the chemical polishing liquid stays on the glass substrate, and conversely, the first relay is passed. In the case of the portion 28, the second relay portion 30, and the third relay portion 32, the glass substrate 100 does not dry out, and high-quality glass research can be realized. mill. In addition, although the injection pipe 282, the injection pipe 302, and the injection pipe 322 of the first relay unit 28, the second relay unit 30, and the third relay unit 32 are in a fixed state, they may not be fixed. The formula is a rocking type.
玻璃基板100,係依序通過第1處理腔16、第2處理腔18、第3處理腔20、第4處理腔22、第1中繼部28、第2中繼部30、以及第3中繼部32,並依序被進行化學研磨。而後,結束了複數階段之化學研磨的玻璃基板100,係藉由被配置在第4處理腔22之出口處的氣刀244而進行上面之甩液處理,之後,藉由從被配置在水洗腔24中之一群的噴射管242所受到之洗淨水而被洗淨。洗淨用之噴射管242,雖係為固定狀態,但是係亦可採用使其作搖動之構成。 The glass substrate 100 sequentially passes through the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, the first relay portion 28, the second relay portion 30, and the third The step 32 is followed by chemical polishing. Then, the glass substrate 100 which has been subjected to the chemical polishing in the plural stage is subjected to the sputum treatment by the air knife 244 disposed at the exit of the fourth processing chamber 22, and thereafter, by being disposed in the water washing chamber The spray pipe 242 of one of the groups 24 is washed by the washing water. Although the spray pipe 242 for washing is in a fixed state, it may be configured to be rocked.
不論如何,在洗淨處理之最終段處,係被配置有上下一對之氣刀246,並藉由從該處所噴射出之空氣來使玻璃基板100之上下面迅速的乾燥。而後,從水洗腔24之導出口300所排出的玻璃基板,係藉由在搬出部26處待機之作業員而被取出,並結束一連串之加工處理。如此這般,藉由在上下一對之氣刀246的前段處另外配置氣刀244,由於係成為能夠從玻璃基板100之上面而將化學研磨液迅速地除去,因此,係成為能夠有效地防止玻璃基板100之上面被不均一性地蝕刻的情況。 In any case, at the final stage of the washing process, a pair of upper and lower air knives 246 are disposed, and the air jetted from the space is used to rapidly dry the upper and lower surfaces of the glass substrate 100. Then, the glass substrate discharged from the outlet 300 of the washing chamber 24 is taken out by the worker who waits at the carry-out unit 26, and the series of processing is terminated. In this manner, by separately arranging the air knife 244 in the front stage of the pair of upper and lower air knives 246, the chemical polishing liquid can be quickly removed from the upper surface of the glass substrate 100, so that it can be effectively prevented. The upper surface of the glass substrate 100 is etched unevenly.
如同上述一般,若依據本實施形態之化學研磨裝置10,則由於係在被閉塞之空間中而進行化學研磨,並且在 裝置內所產生的氟酸氣體等之有毒氣體係藉由洗氣器等之排氣機構而被略全部回收,因此,在化學研磨裝置10之周圍,氟酸氣體係幾乎不會擴散。其結果,相較於批次式化學研磨處理的情況,化學研磨裝置10周圍之作業環境係大幅度的改善。故而,係成為不會有作業員之健康惡化的擔憂,並且亦成為不需要在保護裝備上耗費成本。 As described above, according to the chemical polishing apparatus 10 of the present embodiment, chemical polishing is performed in the space where the occlusion is closed, and The toxic gas system such as the hydrofluoric acid gas generated in the apparatus is slightly recovered by the exhaust mechanism of the scrubber or the like. Therefore, the fluorinated acid gas system hardly diffuses around the chemical polishing apparatus 10. As a result, the working environment around the chemical polishing apparatus 10 is greatly improved as compared with the case of the batch type chemical polishing treatment. Therefore, there is a fear that the health of the worker will not deteriorate, and it is also unnecessary to cost the protective equipment.
進而,由於係能夠防止化學研磨裝置10之周圍的設備被氟酸氣體所侵蝕,因此亦能夠對於設備之維修費用作抑制。亦即是,可以說係有著能夠以低價之維修費用來對於作業員而提供良好之作業環境的極大之優點。又,在上述之單片方式的化學研磨裝置10中,係有著能夠將治具費用抑制為低並且也不會在玻璃基板上產生治具痕跡的優點。其結果,係成為能夠進行效率為佳之去角設計,而能夠將去角效率提升。 Further, since it is possible to prevent the equipment around the chemical polishing apparatus 10 from being corroded by the hydrofluoric acid gas, it is possible to suppress the maintenance cost of the equipment. That is to say, it can be said that there is a great advantage that it can provide a good working environment for the operator at a low maintenance cost. Moreover, in the above-described single-piece chemical polishing apparatus 10, there is an advantage that the cost of the jig can be suppressed to be low and the jig traces are not generated on the glass substrate. As a result, it is possible to carry out the chamfering design which is excellent in efficiency, and it is possible to improve the deangulation efficiency.
進而,在使用有單片方式之化學研磨裝置10的情況時,相較於批次方式之研磨處理,係有著成為能夠將作業效率和製品之品質提升的優點。進而,若依據化學研磨裝置10,則由於板厚精確度係提升,因此係能夠安定地預測切割時之良率。又,關於切斷面平面強度,相較於批次方式之研磨處理,亦成為能夠使其增強。進而,由於係不會有由於起泡所導致之氟酸損耗,因此能夠期待有15%程度之氟酸成本的削減。 Further, in the case where the chemical polishing apparatus 10 having a single-piece method is used, there is an advantage that the work efficiency and the quality of the product can be improved compared to the batch type polishing treatment. Further, according to the chemical polishing apparatus 10, since the plate thickness accuracy is improved, it is possible to stably predict the yield at the time of cutting. Further, the strength of the cut surface plane can be enhanced as compared with the batch type polishing treatment. Further, since there is no loss of fluoric acid due to foaming, it is expected to reduce the cost of fluoric acid by 15%.
上述之實施形態的說明,係在各點上均僅為例示,而不應將其視為限制性的說明。本發明之範圍,係並不被上 述之實施形態所限定,而是由申請專利範圍所界定。進而,在本發明之範圍中,係包含有與申請專利範圍均等之意義以及範圍內的所有之變更。 The above description of the embodiments is merely illustrative, and should not be construed as limiting. The scope of the invention is not The embodiments are defined, but are defined by the scope of the patent application. Furthermore, all changes that come within the meaning and range of the scope of the invention are included in the scope of the invention.
10‧‧‧化學研磨裝置 10‧‧‧Chemical grinding device
12‧‧‧搬入部 12‧‧‧Moving Department
14‧‧‧前置處理腔 14‧‧‧Pre-treatment chamber
16‧‧‧第1處理腔 16‧‧‧1st treatment chamber
18‧‧‧第2處理腔 18‧‧‧2nd processing chamber
20‧‧‧第3處理腔 20‧‧‧3rd processing chamber
22‧‧‧第4處理腔 22‧‧‧4th processing chamber
24‧‧‧水洗腔 24‧‧‧washing chamber
26‧‧‧搬出部 26‧‧‧ Moving out
28‧‧‧第1中繼部 28‧‧‧1st relay unit
30‧‧‧第2中繼部 30‧‧‧2nd relay
32‧‧‧第3中繼部 32‧‧‧3rd relay department
〔圖1〕對於本發明之實施形態的單片式化學研磨裝置之外觀作展示的圖。 Fig. 1 is a view showing the appearance of a one-piece chemical polishing apparatus according to an embodiment of the present invention.
〔圖2〕對於單片式化學研磨裝置之概略構成作展示的圖。 Fig. 2 is a view showing a schematic configuration of a one-piece chemical polishing apparatus.
〔圖3〕對於單片式化學研磨裝置之概略構成作展示的圖。 Fig. 3 is a view showing a schematic configuration of a one-piece chemical polishing apparatus.
〔圖4〕對於第1處理腔之概略構成作展示的圖。 Fig. 4 is a view showing a schematic configuration of a first processing chamber.
〔圖5〕對於處理液供給機構之概略構成作展示的圖。 Fig. 5 is a view showing a schematic configuration of a processing liquid supply mechanism.
〔圖6〕對於曲柄機構之概略構成作展示的圖。 Fig. 6 is a view showing a schematic configuration of a crank mechanism.
〔圖7〕對於前置處理腔處之處理作說明之圖。 [Fig. 7] A diagram for explaining the processing at the pre-processing chamber.
10‧‧‧化學研磨裝置 10‧‧‧Chemical grinding device
12‧‧‧搬入部 12‧‧‧Moving Department
14‧‧‧前置處理腔 14‧‧‧Pre-treatment chamber
16‧‧‧第1處理腔 16‧‧‧1st treatment chamber
18‧‧‧第2處理腔 18‧‧‧2nd processing chamber
20‧‧‧第3處理腔 20‧‧‧3rd processing chamber
22‧‧‧第4處理腔 22‧‧‧4th processing chamber
24‧‧‧水洗腔 24‧‧‧washing chamber
26‧‧‧搬出部 26‧‧‧ Moving out
28‧‧‧第1中繼部 28‧‧‧1st relay unit
30‧‧‧第2中繼部 30‧‧‧2nd relay
32‧‧‧第3中繼部 32‧‧‧3rd relay department
36‧‧‧曲柄機構 36‧‧‧Crank mechanism
38‧‧‧計器 38‧‧‧ 计
50‧‧‧搬送滾輪 50‧‧‧Transport roller
200‧‧‧導入口 200‧‧‧Import
300‧‧‧導出口 300‧‧‧export
340‧‧‧排氣管線 340‧‧‧Exhaust line
Claims (4)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011225799A JP5383769B2 (en) | 2011-10-13 | 2011-10-13 | Single wafer chemical polishing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201341118A true TW201341118A (en) | 2013-10-16 |
TWI568540B TWI568540B (en) | 2017-02-01 |
Family
ID=48081838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101137729A TWI568540B (en) | 2011-10-13 | 2012-10-12 | Monolithic chemical grinding equipment |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5383769B2 (en) |
KR (1) | KR101988999B1 (en) |
CN (1) | CN103889912B (en) |
TW (1) | TWI568540B (en) |
WO (1) | WO2013054783A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5317304B2 (en) * | 2012-01-31 | 2013-10-16 | 株式会社Nsc | Chemical polishing equipment |
JP6371502B2 (en) * | 2013-07-30 | 2018-08-08 | 大日本印刷株式会社 | Manufacturing method of optical film |
JP6557953B2 (en) * | 2014-09-09 | 2019-08-14 | 大日本印刷株式会社 | Structure and manufacturing method thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2533149B2 (en) * | 1988-01-20 | 1996-09-11 | 株式会社東芝 | Wet etching method |
CN2105491U (en) * | 1991-10-18 | 1992-05-27 | 夏长孝 | Pre-processor for glass |
US5228949A (en) * | 1991-11-07 | 1993-07-20 | Chemcut Corporation | Method and apparatus for controlled spray etching |
JPH08307037A (en) * | 1995-04-28 | 1996-11-22 | Yoshisato Tsubaki | Etching method of substrate and etching device of substrate |
JPH11307494A (en) * | 1998-04-17 | 1999-11-05 | Dainippon Screen Mfg Co Ltd | Substrate processing device |
JP2000323813A (en) * | 1999-05-12 | 2000-11-24 | Dainippon Screen Mfg Co Ltd | Substrate treatment unit |
JP3321120B2 (en) * | 1999-08-24 | 2002-09-03 | 東京化工機株式会社 | Chemical treatment equipment |
JP2007217752A (en) * | 2006-02-16 | 2007-08-30 | Toshiba Matsushita Display Technology Co Ltd | Etching device |
KR101387711B1 (en) | 2007-04-10 | 2014-04-23 | 에프엔에스테크 주식회사 | Glass substrate etching apparatus of flat panel display |
JP5449876B2 (en) * | 2008-08-28 | 2014-03-19 | 東京応化工業株式会社 | Transport device |
-
2011
- 2011-10-13 JP JP2011225799A patent/JP5383769B2/en not_active Expired - Fee Related
-
2012
- 2012-10-09 KR KR1020147010681A patent/KR101988999B1/en active IP Right Grant
- 2012-10-09 WO PCT/JP2012/076096 patent/WO2013054783A1/en active Application Filing
- 2012-10-09 CN CN201280050075.XA patent/CN103889912B/en not_active Expired - Fee Related
- 2012-10-12 TW TW101137729A patent/TWI568540B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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JP2013086978A (en) | 2013-05-13 |
WO2013054783A1 (en) | 2013-04-18 |
CN103889912B (en) | 2016-01-20 |
CN103889912A (en) | 2014-06-25 |
TWI568540B (en) | 2017-02-01 |
KR101988999B1 (en) | 2019-06-13 |
JP5383769B2 (en) | 2014-01-08 |
KR20140081828A (en) | 2014-07-01 |
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