TW201340815A - A method of manufacturing a printed circuit board, a printed circuit board and a semiconductor device - Google Patents
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本發明係關於一種印刷電路板之製造方法、印刷電路板及半導體裝置。 The present invention relates to a method of manufacturing a printed circuit board, a printed circuit board, and a semiconductor device.
以往，製造用於半導體裝置的電路板時，例如準備玻璃預浸體等樹脂所構成之大片的疊層板，在此疊層板上一併形成對應複數的印刷電路板之配線圖案之後，加工成既定的尺寸。 Conventionally, when manufacturing a circuit board for a semiconductor device, for example, a large-sized laminated board made of a resin such as a glass prepreg is prepared, and a wiring pattern corresponding to a plurality of printed circuit boards is collectively formed on the laminated board, and then processed. Into a given size.
又，有時藉由電解電鍍來對配線圖案的主要部分施加鍍鎳或鍍金。施加電解電鍍時，係將用以自外部接收供電之供電圖案與配線圖案連接。藉由將配線圖案與供電圖案相連接，可對配線圖案供電，可對此配線圖案的必要處施加鎳或金的電解電鍍。 Further, nickel plating or gold plating is applied to a main portion of the wiring pattern by electrolytic plating. When electrolytic plating is applied, a power supply pattern for receiving power from the outside is connected to the wiring pattern. The wiring pattern can be supplied with power by connecting the wiring pattern to the power supply pattern, and electrolytic plating of nickel or gold can be applied to the necessary portion of the wiring pattern.
供電圖案，僅在用以對印刷電路板的配線圖案之必要處進行電解電鍍時有其必要，在電氣訊號的傳導等時，乃是不必要之部分。因此，當電解電鍍結束後，在印刷電路板的外型加工時亦同時將供電圖案切斷使供電圖案與配線圖案斷線來製得印刷電路板。 The power supply pattern is necessary only for electroplating necessary for the wiring pattern of the printed circuit board, and is an unnecessary part in the conduction of the electric signal or the like. Therefore, when the electrolytic plating is completed, the power supply pattern is cut off at the same time as the external processing of the printed circuit board, and the power supply pattern and the wiring pattern are broken to produce a printed circuit board.
另一方面，隨著印刷電路板的小型高密度化，僅在印刷電路板的外型加工時將供電圖案切斷使供電圖案與配線圖案斷線則有其困難，為了與之對應而提出了：以具蝕刻耐性的電鍍將配線圖案覆蓋之後，將供電圖案蝕刻去除等方法(例如專利文獻1)。 On the other hand, with the miniaturization and high density of the printed circuit board, it is difficult to cut the power supply pattern and disconnect the power supply pattern and the wiring pattern only during the external processing of the printed circuit board, and it has been proposed in order to cope with it. : A method in which a wiring pattern is covered by etching with etching resistance, and a power supply pattern is removed by etching or the like (for example, Patent Document 1).
然而，具蝕刻耐性的電鍍法等仍有電鍍表面受污染等問題。 However, electroplating methods such as etching resistance have problems such as contamination of the plating surface.
專利文獻1：日本特開昭53-133423號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. Sho 53-133423
本發明係鑑於上述事由所製成，係提供一種不會使步驟複雜化並對應小型高密度化之印刷電路板之製造方法、印刷電路板及半導體裝置。 The present invention has been made in view of the above circumstances, and provides a method of manufacturing a printed circuit board, a printed circuit board, and a semiconductor device which are complicated in size and high in density without complicating the steps.
根據本發明，可提供一種印刷電路板之製造方法，其特徵為包含以下步驟：在絕緣基板上設置複數的接線墊，以及使該接線墊彼此連接並且供電至該接線墊之供電圖案之步驟；在該絕緣基板上設置表面被覆層並且將該被覆層選擇性地去除，藉以將第一開口部設置在該供電圖案上之步驟；以及將從該第一開口部露出的該供電圖案選擇性地去除之步驟。 According to the present invention, there can be provided a method of manufacturing a printed circuit board, comprising the steps of: providing a plurality of wiring pads on an insulating substrate, and connecting the wiring pads to each other and supplying power to the power supply pattern of the wiring pads; Providing a surface coating layer on the insulating substrate and selectively removing the coating layer, thereby disposing the first opening portion on the power supply pattern; and selectively supplying the power supply pattern exposed from the first opening portion Steps to remove.
在此印刷電路板之製造方法中，係將從第一開口部露出的供電圖案選擇性地去除。因此，在外形加工時利用衝孔來去除供電圖案之方法中，即使是有界限的高密度配線圖案，亦可有效率地將供電圖案去除。 In the method of manufacturing a printed circuit board, the power supply pattern exposed from the first opening portion is selectively removed. Therefore, in the method of removing the power supply pattern by punching during the outer shape processing, even if there is a limited high-density wiring pattern, the power supply pattern can be efficiently removed.
該被覆層宜由單一物質所構成。 The coating layer is preferably composed of a single substance.
又，亦可包含：將該被覆層選擇性地去除，藉以將第二開口部設置在該接線墊的既定位置上之步驟。又，亦可更包含：形成覆蓋該第一開口部並使該第二開口部露出之第一遮罩之步驟。 Moreover, the method further includes the step of selectively removing the coating layer to provide the second opening portion at a predetermined position of the wiring pad. Moreover, the method further includes the step of forming a first mask that covers the first opening and exposes the second opening.
又，亦可更包含：在設置該第二開口部之步驟之後，在該第二開口部上形成用以與半導體元件連接之金屬凸塊之歩驟。又， 亦可更包含：在該金屬凸塊形成後，將該第一遮罩剝離，並且形成覆蓋該第二開口部並使該第一開口部露出之第二遮罩之步驟。 Moreover, the method further includes the step of forming a metal bump for connecting to the semiconductor element on the second opening after the step of providing the second opening. also, The method further includes the step of peeling off the first mask after the metal bump is formed, and forming a second mask covering the second opening and exposing the first opening.
再者，該表面被覆層亦可為感光性樹脂。又，將該供電圖案選擇性地去除之步驟，亦可使用藥液來進行。該第一開口部的形成，亦可對該感光性樹脂進行曝光顯影來形成。又，該第二開口部的形成，亦可使用雷射來進行。 Further, the surface coating layer may be a photosensitive resin. Further, the step of selectively removing the power supply pattern may be performed using a chemical liquid. The formation of the first opening portion may be performed by exposing and developing the photosensitive resin. Further, the formation of the second opening portion may be performed using a laser.
又，該雷射亦可為碳酸氣體雷射。 Also, the laser may be a carbon dioxide gas laser.
又，該金屬凸塊亦可由電鍍所形成。又，該第二開口部，亦可以當剖面觀之時為包夾該第一開口部之方式形成。 Moreover, the metal bumps may also be formed by electroplating. Further, the second opening portion may be formed to sandwich the first opening portion when viewed from the cross section.
根據本發明，可提供一種由上述印刷電路板之製造方法所製得之印刷電路板。 According to the present invention, a printed circuit board produced by the above method of manufacturing a printed circuit board can be provided.
又根據本發明，可提供一種將半導體元件搭載於上述所記載的印刷電路板上所構成之半導體裝置。 According to the present invention, it is possible to provide a semiconductor device in which a semiconductor element is mounted on the printed circuit board described above.
根據本發明，可提供一種不會使步驟複雜化並對應小型高密度化之印刷電路板之製造方法、印刷電路板及半導體裝置。 According to the present invention, it is possible to provide a method of manufacturing a printed circuit board, a printed circuit board, and a semiconductor device which do not complicate the steps and which are small and dense.
以下依據圖式說明本發明的實施形態。 Embodiments of the present invention will be described below based on the drawings.
本實施形態中，係以於雙面形成有電路層之雙面印刷電路板為例來針對較佳的製造方法進行如下之說明。 In the present embodiment, a preferred method of manufacturing is described below by taking a double-sided printed circuit board having a circuit layer formed on both sides as an example.
另，本發明並不限於接下來所說明之內容，在可達成本發明 目的之範圍內的變更、改良等均包含在本發明之內。 In addition, the present invention is not limited to the contents described below, in the reachable cost invention Changes, improvements, etc. within the scope of the purpose are included in the present invention.
又，本發明雖以選擇性地去除第一金屬層，將所殘留的區域作為雷射遮罩使用之保形遮罩法為例來加以說明，但亦可適當地適用於無須去除第一金屬層而直接使用雷射來進行加工之直接雷射加工法。 Further, although the present invention is described by taking a conformal mask method in which the remaining region is selectively removed as a laser mask, the present invention is suitably applied to the first metal without removing the first metal layer. Direct laser processing using layers for direct processing using lasers.
首先，說明以本實施形態中所說明的之製造方法所製得之印刷電路板1。如圖1所示，印刷電路板1設有：絕緣層21，貫穿有導電體20；接線墊22，設於絕緣層21一方的面側(圖中頂面)，並連接至導電體20；以及第一被覆層(第一阻焊層)23，包覆該接線墊22，並且在接線墊22的一部分上形成有第一開口部39與第二開口部38。又，包含：配線圖案24，設於絕緣層21另一方的面側(圖中底面)，並連接至導電體20；第二被覆層(第二阻焊層)25，包覆配線圖案24；以及焊珠29，設於第二被覆層25的開口內。在第一被覆層23的第二開口部38中設有自第一被覆層突出的焊料層26(亦稱為金屬凸塊)；焊料層26設於連接至接線墊22的金屬層27上。金屬層27，例如為銅層271、鎳層272等的疊層構造亦可，或為銅層亦可。 First, the printed circuit board 1 produced by the manufacturing method described in the embodiment will be described. As shown in Figure 1, the printed circuit board 1 is provided with: an insulating layer 21, through the electrical conductor 20; the wiring pad 22, provided on one side of the insulating layer 21 (top surface in the figure), and connected to the electrical conductor 20; And a first covering layer (first solder resist layer) 23 covering the wiring pad 22, and a first opening portion 39 and a second opening portion 38 are formed on a portion of the wiring pad 22. Further, the wiring pattern 24 is provided on the other surface side (the bottom surface in the drawing) of the insulating layer 21, and is connected to the conductor 20; the second coating layer (second solder resist layer) 25, covering the wiring pattern 24; And the bead 29 is provided in the opening of the second covering layer 25. A solder layer 26 (also referred to as a metal bump) protruding from the first cladding layer is provided in the second opening portion 38 of the first cladding layer 23; the solder layer 26 is provided on the metal layer 27 connected to the wiring pad 22. The metal layer 27 may have a laminated structure such as a copper layer 271 or a nickel layer 272, or may be a copper layer.
以下，將圖中頂面稱為頂面，圖中底面稱為底面。 Hereinafter, the top surface in the drawing is referred to as a top surface, and the bottom surface in the drawing is referred to as a bottom surface.
又，第一被覆層23中設有第一開口部39。第一開口部39，係以當剖面觀之時被夾在形成有焊料層26的第二開口部38中方式設置。在第一開口部39的底面有絕緣基板21的表面露出。 Further, a first opening portion 39 is provided in the first covering layer 23. The first opening portion 39 is provided so as to be sandwiched between the second opening portions 38 in which the solder layer 26 is formed when viewed in a cross section. The surface of the insulating substrate 21 is exposed on the bottom surface of the first opening 39.
又，以剖面觀之時第一開口部39的各第二開口部38側之側壁面，乃是第一被覆層的端面與供電圖案的端面37形成約略相同之面。 Further, the side wall surface on the second opening portion 38 side of the first opening portion 39 in the cross-sectional view is such that the end surface of the first coating layer forms approximately the same surface as the end surface 37 of the feed pattern.
其次，說明印刷電路板1之較佳的製造方法。 Next, a preferred manufacturing method of the printed circuit board 1 will be described.
首先，準備：在絕緣層21的頂面設置有第一金屬層11、在底面隔著第二金屬層12與剝離層17設置有支持構件13之貼金屬疊層板10(圖2A)。 First, a metal clad laminate 10 having a first metal layer 11 on the top surface of the insulating layer 21 and a support member 13 on the bottom surface via the second metal layer 12 and the peeling layer 17 is prepared (FIG. 2A).
絕緣層21，可使用一般作為印刷電路板的絕緣材料使用之樹脂複合材料。例如，可使用將樹脂組成物浸滲或塗布於纖維基材之預浸體加熱硬化之樹脂基材、或樹脂薄膜。 As the insulating layer 21, a resin composite material generally used as an insulating material for a printed circuit board can be used. For example, a resin substrate or a resin film obtained by heat-hardening a prepreg in which a resin composition is impregnated or coated on a fiber substrate can be used.
構成絕緣層之樹脂組合物，例如宜為熱硬化性樹脂。熱硬化性樹脂，可將矽氧樹脂、氰酸酯樹脂、酚樹脂等單獨使用或複數組合來使用。樹脂組成物，為了提升其低熱膨脹性，亦可含有無機填充材料。 The resin composition constituting the insulating layer is preferably, for example, a thermosetting resin. The thermosetting resin can be used singly or in combination of a silicone resin, a cyanate resin, a phenol resin, or the like. The resin composition may contain an inorganic filler in order to enhance its low thermal expansion property.
構成纖維基材的基材，例如可舉出玻璃織布、玻璃不織布等玻璃纖維基材，或是以玻璃以外的無機化合物為成分之織布或不織布等無機玻璃纖維基材。此等之中從作為印刷電路板時的剛性之面向來看，宜為玻璃織布纖維基材。 Examples of the substrate constituting the fiber base material include a glass fiber base material such as a glass woven fabric or a glass nonwoven fabric, or an inorganic glass fiber base material such as a woven fabric or a nonwoven fabric containing inorganic compounds other than glass. Among these, from the viewpoint of rigidity as a printed circuit board, it is preferable to be a glass woven fiber substrate.
將使預浸體加熱硬化之樹脂基材作為絕緣層21使用時，將在該熱硬化性樹脂中因應需要而製備有無機填充材料、硬化劑、硬化促進劑之樹脂清漆，浸滲於玻璃纖維布纖維基材等基材中，並使之乾燥，藉以製得預浸體。其次，將金屬層重疊在預浸體的正反面上來進行加熱加壓成形，而可製得貼金屬疊層板10。又，即使直接對絕緣層21施以電鍍處理，亦可製得貼金屬疊層板10。但，製得疊層板之方法並不限於上述，可適當地進行選擇。 When a resin substrate which heat-hardens a prepreg is used as the insulating layer 21, a resin varnish containing an inorganic filler, a hardener, and a hardening accelerator is prepared as needed in the thermosetting resin, and impregnated into the glass fiber. A prepreg is prepared by drying a substrate such as a fiber substrate and drying it. Next, the metal layer is laminated on the front and back surfaces of the prepreg to perform heat and pressure forming, whereby the metal laminated board 10 can be obtained. Further, even if the insulating layer 21 is directly subjected to a plating treatment, the metal-clad laminate 10 can be obtained. However, the method of producing the laminated board is not limited to the above, and can be appropriately selected.
使用樹脂薄膜時，樹脂薄膜，例如可舉出：聚醯亞胺樹脂薄膜、聚醚醯亞胺樹脂薄膜、聚醯胺醯亞胺樹脂薄膜等之聚醯亞胺樹脂系薄膜；聚醯胺樹脂等之聚醯胺樹脂系薄膜；聚酯樹脂等之聚酯樹脂系薄膜。其中宜以聚醯亞胺樹脂系薄膜為主。藉此，可提升彈力與耐熱性。 When a resin film is used, examples of the resin film include a polyimide film, a polyetherimide resin film, a polyamidimide resin film, and the like; and a polyamide resin; A polyester resin film such as a polyamide resin film or the like. Among them, it is preferred to use a polyimide film. Thereby, the elasticity and heat resistance can be improved.
使用樹脂薄膜時，可使用：在金屬層上塗布成為基底的樹脂 並使之加熱乾燥來作為疊層板者；將黏接劑樹脂塗布在金屬箔上，並對樹脂薄膜進行加熱加壓成形來作為疊層板者；直接藉由濺鍍或電鍍在樹脂薄膜上形成金屬層來作為疊層板者。但，製得疊層板的方法並不限於上述，可適當地進行選擇。 When a resin film is used, it is possible to use a resin coated as a substrate on a metal layer. And heating and drying it as a laminate; coating the adhesive resin on the metal foil, and heating and pressing the resin film to form a laminate; directly by sputtering or plating on the resin film A metal layer is formed as a laminate. However, the method of producing the laminated board is not limited to the above, and can be appropriately selected.
絕緣層21的厚度，係由印刷電路板1的規格所決定，雖無特別限定，但宜為20μm~300μm，較佳為40μm~100μm。 The thickness of the insulating layer 21 is determined by the specifications of the printed circuit board 1, and is not particularly limited, but is preferably 20 μm to 300 μm, preferably 40 μm to 100 μm.
其次說明第一金屬層11。第一金屬層11的金屬種類宜為鎳、鉻、鈷、鉬、釩、鎢或銅等單一金屬，或是宜以此等的合金薄膜作為第一金屬層11。又，使用極薄金屬層時，金屬種類係使用不銹鋼、鎳、鋁、鐵、銅等，從蝕刻性等來看較佳為使用銅。 Next, the first metal layer 11 will be described. The metal species of the first metal layer 11 is preferably a single metal such as nickel, chromium, cobalt, molybdenum, vanadium, tungsten or copper, or an alloy thin film such as this is preferably used as the first metal layer 11. Further, when an extremely thin metal layer is used, stainless steel, nickel, aluminum, iron, copper, or the like is used for the metal type, and copper is preferably used from the viewpoint of etching property and the like.
第一金屬層11的厚度為0.05μm以上、12μm以下為宜。第一金屬層11厚於12μm時，難以在第一金屬層11以及導體層之配線圖案形成後，去除用以進行半加成製程中的電解電鍍的供電之供電圖案36，難以形成細微電路。又，第一金屬層11薄於0.05μm時，在電路形成的步驟中，有銅受到蝕刻而露出基底的絕緣層21之可能性。 The thickness of the first metal layer 11 is preferably 0.05 μm or more and 12 μm or less. When the first metal layer 11 is thicker than 12 μm, it is difficult to remove the power supply pattern 36 for performing electrolytic plating in the semi-additive process after the wiring pattern of the first metal layer 11 and the conductor layer is formed, and it is difficult to form a fine circuit. Further, when the first metal layer 11 is thinner than 0.05 μm, in the step of forming the circuit, there is a possibility that the copper is etched to expose the insulating layer 21 of the substrate.
作為第二金屬層12，金屬的種類、金屬的厚度亦可不同於第一金屬層11，亦可與之相同。若在第二金屬層12側中亦與第一金屬層11側同樣要求配線圖案的細微化與精度，則宜與第一金屬層11為同種。 As the second metal layer 12, the kind of the metal and the thickness of the metal may be different from the first metal layer 11, or may be the same. When the wiring pattern is required to be finer and more precise than the first metal layer 11 side on the second metal layer 12 side, it is preferably the same as the first metal layer 11.
其次，說明支持構件13。在雷射加工步驟中，藉由固持該支持構件13來進行雷射加工，可防止位於貫穿孔19的底部之第二金屬層12的損傷、貫穿、孔洞。當未固持支持構件13來進行雷射加工時，有雷射加工條件變得狹小之虞。 Next, the support member 13 will be described. In the laser processing step, by performing the laser processing by holding the support member 13, it is possible to prevent damage, penetration, and holes of the second metal layer 12 located at the bottom of the through hole 19. When the support member 13 is not held for laser processing, there are cases where the laser processing conditions become narrow.
支持構件13的素材，宜為含有選自銅、鋁、銀、金、鎳、鉻、鈦、鋯、鐵、鈀、鉑、鉬、鈷、鎢、鈮、鉭、矽之至少1種的材料。其中，較佳為由銅、鋁、銀、金所構成之材料。 The material of the support member 13 is preferably a material containing at least one selected from the group consisting of copper, aluminum, silver, gold, nickel, chromium, titanium, zirconium, iron, palladium, platinum, molybdenum, cobalt, tungsten, rhenium, ruthenium, and iridium. . Among them, a material composed of copper, aluminum, silver, or gold is preferable.
其次，支持構件13的熱傳導率宜為10W．m-1．K-1以上。小於10W．m-1．K-1時，因為雷射加工中的熱容量較小而難以散熱，故容易積熱。因此，位於貫穿孔底部周邊的第二金屬層12頂面之絕緣層21的樹脂因熱而劣化。因此，第二金屬層12與絕緣層21之密接劣化，可靠度降低。 Secondly, the thermal conductivity of the support member 13 is preferably 10 W. M-1. K-1 or more. Less than 10W. M-1. At K-1, since the heat capacity in the laser processing is small and it is difficult to dissipate heat, it is easy to accumulate heat. Therefore, the resin of the insulating layer 21 located on the top surface of the second metal layer 12 at the periphery of the bottom of the through hole is deteriorated by heat. Therefore, the adhesion between the second metal layer 12 and the insulating layer 21 is deteriorated, and the reliability is lowered.
又，支持構件13的厚度雖無特別規定，但宜為10μm以上、50μm以下，較佳為10μm以上、25μm以下。令支持構件13的厚度在此範圍內，因而在後續步驟中容易剝離去除。 Further, although the thickness of the support member 13 is not particularly limited, it is preferably 10 μm or more and 50 μm or less, and preferably 10 μm or more and 25 μm or less. The thickness of the support member 13 is made to be within this range, and thus it is easy to peel off in the subsequent step.
其次說明剝離層17。剝離層17，係以含有選自鉻、鉻酸鹽、鉬、鉭、釩、錳、鎢、鐵、鈷、鎳、鋅之至少1種的物質所進行之表面處理、或形成矽烷偶合劑等有機覆膜之方法來適當地形成。 Next, the peeling layer 17 will be described. The release layer 17 is surface-treated with a substance selected from at least one selected from the group consisting of chromium, chromate, molybdenum, niobium, vanadium, manganese, tungsten, iron, cobalt, nickel, and zinc, or a decane coupling agent is formed. The method of organic coating is suitably formed.
支持構件13與剝離層17以及第二金屬層12，從雷射加工品質或電路基板的可靠度、生產力諸點來看，特別適合使用附載體箔可剝離極薄銅箔或將銅電沉積在鋁箔上之可蝕刻性極薄銅箔。 The support member 13 and the peeling layer 17 and the second metal layer 12 are particularly suitable for using a carrier foil peelable ultra-thin copper foil or electrodepositing copper from the viewpoints of laser processing quality or reliability and productivity of the circuit substrate. Very thin copper foil with etchability on aluminum foil.
其次，藉由光阻形成、遮罩曝光、顯影、蝕刻去除、剝離，選擇性地去除第一金屬層的貫穿孔之形成部分，而形成保形遮罩法的遮罩(未圖示)。 Next, a portion of the through hole of the first metal layer is selectively removed by photoresist formation, mask exposure, development, etching removal, and lift-off to form a mask (not shown) of the conformal mask method.
自第一金屬層11面側將雷射照射在選擇性地去除了第一金屬層11之部分上。藉由照射雷射光而在絕緣層21中形成貫穿孔19(圖2B)。照射雷射之機具，例如有碳酸氣體雷射加工機、UV雷射加工機、準分子雷射加工機等，較佳為碳酸氣體雷射加工機。 碳酸氣體雷射加工機的特徵點，可舉出無機基材的加工為相對較容易的震盪波長區域。 A laser is irradiated from a surface side of the first metal layer 11 on a portion where the first metal layer 11 is selectively removed. A through hole 19 is formed in the insulating layer 21 by irradiating the laser light (Fig. 2B). The apparatus for irradiating the laser, for example, a carbon dioxide gas laser processing machine, a UV laser processing machine, an excimer laser processing machine, etc., is preferably a carbon dioxide gas laser processing machine. The characteristic point of the carbon dioxide gas laser processing machine is a region in which the inorganic substrate is processed to a relatively easy oscillation wavelength region.
雷射的加工條件雖無特別限定，但例如絕緣層21的厚度為40μm而第一金屬層11以及第二金屬層12的厚度為3μm且使用碳酸氣體雷射加工機時，較佳為光束徑100~180μm、脈衝寬度1~100μm、基準能量0.5~9.0mJ，更佳為光束徑110~130μm、脈衝寬度1~20μm、基準能量1.0~3.0mJ。 Although the processing conditions of the laser are not particularly limited, for example, when the thickness of the insulating layer 21 is 40 μm and the thickness of the first metal layer 11 and the second metal layer 12 is 3 μm and a carbon dioxide gas laser processing machine is used, the beam diameter is preferable. 100~180μm, pulse width 1~100μm, reference energy 0.5~9.0mJ, more preferably beam diameter 110~130μm, pulse width 1~20μm, reference energy 1.0~3.0mJ.
例如絕緣層21的厚度為60μm而第一金屬層11以及第二金屬層12的厚度為3μm且使用碳酸氣體雷射加工機時，較佳為光束徑100~180μm、脈衝寬度1~100μm、基準能量0.5~9.0mJ，更佳為光束徑110~130μm、脈衝寬度20~40μm、基準能量5.0~7.0mJ。 For example, when the thickness of the insulating layer 21 is 60 μm and the thickness of the first metal layer 11 and the second metal layer 12 is 3 μm and a carbon dioxide gas laser processing machine is used, the beam diameter is preferably 100 to 180 μm, and the pulse width is 1 to 100 μm. The energy is 0.5 to 9.0 mJ, more preferably the beam diameter is 110 to 130 μm, the pulse width is 20 to 40 μm, and the reference energy is 5.0 to 7.0 mJ.
又，宜以過錳酸酸去膠渣處理或電漿清洗等，將雷射加工後的貫穿孔19內的碳化物殘渣加以適當地清洗去除。 Further, it is preferable to appropriately clean and remove the carbide residue in the through hole 19 after the laser processing by permanganic acid desmear treatment or plasma cleaning.
因此，可形成第二金屬層12的沒有損傷、貫穿、孔洞之缺陷之貫穿孔19。 Therefore, the through hole 19 of the second metal layer 12 without defects such as damage, penetration, and voids can be formed.
其次，將導體層15賦予在第一以及第二金屬層11、12上、以及絕緣層21的貫穿孔19內壁面上(圖2C)。導體層15的厚度，例如宜為0.05μm以上、2.0μm以下。導體層15的形成方法，宜為濺鍍法、蒸鍍法、無電解電鍍法。其中較佳為無電解電鍍法。又，導體層15的材料較適當為鎳、鉻、鈷、鉬、釩、鎢或銅等單一金屬，或其等之合金。特別是，若有鑒於與貫穿孔19內的絕緣層21的內壁部分之導體密接性，以及成為半加成製程的供電層之第一以及第二金屬層11、12以及導體層15之去除性，則銅更為適宜。 Next, the conductor layer 15 is applied to the first and second metal layers 11, 12 and the inner wall surface of the through hole 19 of the insulating layer 21 (Fig. 2C). The thickness of the conductor layer 15 is preferably, for example, 0.05 μm or more and 2.0 μm or less. The method of forming the conductor layer 15 is preferably a sputtering method, a vapor deposition method, or an electroless plating method. Among them, electroless plating is preferred. Further, the material of the conductor layer 15 is suitably a single metal such as nickel, chromium, cobalt, molybdenum, vanadium, tungsten or copper, or an alloy thereof. In particular, the adhesion of the conductors to the inner wall portion of the insulating layer 21 in the through hole 19, and the removal of the first and second metal layers 11, 12 and the conductor layer 15 of the power supply layer which is a semi-additive process are considered. Sex, copper is more suitable.
其次，將隔著剝離層17鄰接於第二金屬層12之支持構件13剝離(圖2D、圖3A)。剝離的方法並無特別規定，使用適當、適宜之方法即可。 Next, the support member 13 adjacent to the second metal layer 12 via the peeling layer 17 is peeled off (FIG. 2D, FIG. 3A). The method of peeling is not specifically defined, and an appropriate and appropriate method can be used.
其次，如圖3B所示，將光阻遮罩M配置於不形成圖案之部分上。光阻遮罩M可使用薄膜狀的負型感光性光阻。 Next, as shown in FIG. 3B, the photoresist mask M is disposed on a portion where no pattern is formed. The photoresist mask M can use a film-shaped negative photosensitive photoresist.
光阻遮罩M的形成方法，係使用例如真空壓合機等將負型感光性光阻形成於導體層上。其次，使用遮蓋了形成圖案的部分之光罩，來進行紫外線照射。其次，進行顯影。顯影液可使用碳酸鈉溶液。 In the method of forming the photoresist mask M, a negative photosensitive resist is formed on the conductor layer by using, for example, a vacuum press machine. Next, ultraviolet ray irradiation is performed using a photomask that covers the portion where the pattern is formed. Next, development is carried out. A sodium carbonate solution can be used as the developer.
其次，在導體層15上施以電鍍(圖3C)。電鍍的方法可使用硫酸銅電鍍。電鍍的厚度在圖案部分中宜為1μm以上、50μm以下，較佳為5μm以上、40μm以下。因此，形成成為通孔之導電體20，並且形成接線墊22與配線圖案24。 Next, electroplating is applied to the conductor layer 15 (Fig. 3C). The method of electroplating can be electroplated using copper sulfate. The thickness of the plating is preferably 1 μm or more and 50 μm or less, and preferably 5 μm or more and 40 μm or less in the pattern portion. Therefore, the electric conductor 20 which becomes the through hole is formed, and the wiring pad 22 and the wiring pattern 24 are formed.
其次，藉由剝離液將光阻遮罩剝離。剝離液，例如可使用鹼性水溶性的液體。 Next, the photoresist mask is peeled off by a stripper. As the peeling liquid, for example, an alkaline water-soluble liquid can be used.
其次，將形成有光阻遮罩的部分之第一和第二金屬層11、12以及導體層15去除。(圖3D)。去除方法宜使用過氧化氫-硫酸蝕刻液與高壓噴霧方式。未將由電解電鍍所形成的圖案曝露於長時間的蝕刻等中，故電路精度優良，且可作為適合高密度配線的電路基板。因此，在絕緣基板21上的頂面，形成將接線墊22與接線墊22彼此連接以及電性導出連接至外部之供電圖案36；並在底面形成有配線圖案24。供電圖案36的配線形狀，例如如圖8A所示，以在俯視觀之時包圍接線墊的方式設有供電圖案36，而連接至各接線墊。圖8B係示意地顯示將供電圖案36去除時之圖。 Next, the first and second metal layers 11, 12 and the conductor layer 15 on which the photoresist mask is formed are removed. (Fig. 3D). The removal method should preferably use a hydrogen peroxide-sulfuric acid etching solution and a high pressure spraying method. Since the pattern formed by electrolytic plating is not exposed to etching for a long period of time or the like, the circuit is excellent in accuracy and can be used as a circuit board suitable for high-density wiring. Therefore, on the top surface of the insulating substrate 21, a power supply pattern 36 that connects the wiring pads 22 and the wiring pads 22 to each other and electrically leads to the outside is formed; and a wiring pattern 24 is formed on the bottom surface. The wiring shape of the power supply pattern 36 is, for example, as shown in FIG. 8A, and is provided with a power supply pattern 36 so as to surround the wiring pads in a plan view, and is connected to each of the wiring pads. FIG. 8B is a view schematically showing a state in which the power supply pattern 36 is removed.
其次，在接線墊22、供電圖案36、配線圖案24之上，形成有第一以及第二被覆層23、25。第一以及第二被覆層23、25，雖可使用感光性類型或非感光性類型，但宜為感光性類型。又，可舉出片狀或液狀者。適當地選擇其等即可。藉由使用感光性類型的表面被覆層，可簡化步驟。 Next, first and second covering layers 23 and 25 are formed on the wiring pad 22, the power supply pattern 36, and the wiring pattern 24. The first and second covering layers 23 and 25 may be of a photosensitive type or a non-photosensitive type, but are preferably of a photosensitive type. Further, those in the form of flakes or liquids can be mentioned. You can choose them appropriately. The step can be simplified by using a photosensitive type of surface coating.
又，第一以及第二被覆層23、25，例如能由以感光性樹脂為必要成分之樹脂組成物所構成。 Further, the first and second coating layers 23 and 25 can be composed of, for example, a resin composition containing a photosensitive resin as an essential component.
使用此種樹脂組成物，而可藉由曝光以及顯影而容易地圖案成形出第二絕緣層23、第三絕緣層25的開口。 With such a resin composition, the openings of the second insulating layer 23 and the third insulating layer 25 can be easily patterned by exposure and development.
感光性樹脂，並無特別限定，可使用眾所皆知的感光性樹脂組成物來形成。感光性樹脂可為負型、正型之任一者。 The photosensitive resin is not particularly limited, and can be formed using a well-known photosensitive resin composition. The photosensitive resin may be either a negative type or a positive type.
感光性樹脂，可含有丙烯酸樹脂，可使用環氧變性丙烯酸樹脂等。又，除了丙烯酸樹脂等光硬化性樹脂之外，亦可加入環氧樹脂等熱硬化性樹脂。 The photosensitive resin may contain an acrylic resin, and an epoxy-modified acrylic resin or the like may be used. Further, a thermosetting resin such as an epoxy resin may be added in addition to the photocurable resin such as an acrylic resin.
感光性樹脂，亦可加入聚合引發劑、敏化劑、勻塗劑等。又，亦可含有二氧化矽等填充劑。其等的粒徑，宜小於曝光時的光的波長。 As the photosensitive resin, a polymerization initiator, a sensitizer, a leveling agent, or the like may be added. Further, a filler such as cerium oxide may be contained. The particle size of the particles is preferably smaller than the wavelength of light at the time of exposure.
又，感光性樹脂可使用液狀類型，或是薄膜類型等形態。考慮到對第一電路層22、第二電路層24的被覆性、操作性時，宜使用薄膜類型。 Further, the photosensitive resin may be in the form of a liquid type or a film type. The film type is preferably used in consideration of the coating property and operability of the first circuit layer 22 and the second circuit layer 24.
為液狀類型時，能以網版印刷法、塗布法來形成。又，在雙面形成有電路層(第一電路層22、第二電路層24)時，可將雙面電路基板浸漬於液狀光阻中，藉以在雙面同時形成第二絕緣層23以及第三絕緣層25。 When it is a liquid type, it can be formed by a screen printing method or a coating method. Further, when the circuit layer (the first circuit layer 22 and the second circuit layer 24) is formed on both sides, the double-sided circuit substrate can be immersed in the liquid photoresist, whereby the second insulating layer 23 is simultaneously formed on both sides and The third insulating layer 25.
為薄膜類型時，可使用真空壓合機等來形成。 In the case of a film type, it can be formed using a vacuum press machine or the like.
其次，如圖4A所示，藉由將第一以及第二被覆層23、25選擇性地去除，來形成第一開口部39，以及用以在底面搭載焊珠之開口部49。第一以及第二被覆層23、25的厚度，宜為15μm以上、30μm以下。第一以及第二被覆層23、25，厚度可相同，亦可不同。 又，亦可與形成被覆層的樹脂之組成相同，亦可與之不同。開口部的大小，例如在超過100μm時則使用感光性類型的被覆層，例如經由遮罩曝光、顯影步驟來形成開口部為佳。 Next, as shown in FIG. 4A, the first opening portion 39 and the opening portion 49 for mounting the bead on the bottom surface are formed by selectively removing the first and second covering layers 23, 25. The thickness of the first and second coating layers 23 and 25 is preferably 15 μm or more and 30 μm or less. The first and second covering layers 23 and 25 may have the same thickness or different thicknesses. Further, it may be the same as or different from the composition of the resin forming the coating layer. When the size of the opening is, for example, more than 100 μm, a photosensitive type coating layer is used, and for example, an opening is formed by a mask exposure and development step.
又，開口部的大小，例如在未達100μm時則使用非感光性類型的阻焊劑來形成被覆層；至於開口部的形成，例如照射雷射光來形成開口部亦可。 Further, for example, when the size of the opening is less than 100 μm, a non-photosensitive type solder resist is used to form a coating layer; and for the formation of the opening, for example, laser light may be irradiated to form an opening.
其次，藉由將第一被覆層23選擇性地去除，而以包夾第一開口部39並使接線墊22露出之方式形成第二開口部38(圖4B)。用以與半導體晶片進行凸塊連接之第二開口部38，相較於第一開口部39，開口面積較小，故例如在開口部的大小未達100μm時，即使使用非感光性類型的阻焊劑來形成被覆層、或使用非感光性類型的阻焊劑來形成被覆層，則開口部例如宜照射雷射光來形成開口部。照射雷射光的機具，例如有CO2雷射加工機、UV雷射加工機、準分子雷射加工機等，較佳為CO2雷射加工機。雷射的加工條件，宜為脈衝寬度1~100μm、基準能量0.5~9.0mJ，更佳為脈衝寬度1~20μm、基準能量1.0~3.0mJ。照射次數則配合基材的厚度來適當決定即可。 Next, by selectively removing the first covering layer 23, the second opening portion 38 is formed to sandwich the first opening portion 39 and expose the wiring pad 22 (FIG. 4B). The second opening portion 38 for bump connection with the semiconductor wafer has a smaller opening area than the first opening portion 39. Therefore, for example, when the size of the opening portion is less than 100 μm, even if a non-photosensitive type is used. When the flux forms a coating layer or a non-photosensitive type solder resist is used to form the coating layer, the opening is preferably irradiated with laser light to form an opening. The apparatus for irradiating the laser light, for example, a CO2 laser processing machine, a UV laser processing machine, an excimer laser processing machine, etc., is preferably a CO2 laser processing machine. The processing conditions of the laser are preferably a pulse width of 1 to 100 μm, a reference energy of 0.5 to 9.0 mJ, more preferably a pulse width of 1 to 20 μm, and a reference energy of 1.0 to 3.0 mJ. The number of times of irradiation may be appropriately determined in accordance with the thickness of the substrate.
其次，在從用以搭載焊料凸塊的開口部49露出的配線圖案24上，宜形成金屬層28以作為用以保護配線圖案24之表面處理。 Next, on the wiring pattern 24 exposed from the opening portion 49 on which the solder bump is mounted, the metal layer 28 is preferably formed as a surface treatment for protecting the wiring pattern 24.
形成順序，例如首先，以遮罩覆蓋第一開口部39與第二開口部38，在開口部49上形成金屬層28。其次，將上述遮罩去除之後，如圖4C所示，以遮罩覆蓋在配線圖案24上形成有金屬層28之開口部49，以及第一開口部39，使接線墊22從第二開口部38露出。在從第二開口部38露出的接線墊22上，以電解電鍍形成較第一被覆層23的高度更為突出之焊料層26(亦稱為金屬凸塊)。較第一被覆層23更為突出之焊料層26的材料，適合銅、鎳、錫、銀等單一金屬，或其等之合金。焊料層26的厚度，宜為1μm以上、45μm以下，較佳為2μm以上、20μm以下。又，根據需要，可藉 由電解電鍍在接線墊22與焊料層26之間形成金屬層27。 In the order of formation, for example, first, the first opening portion 39 and the second opening portion 38 are covered with a mask, and the metal layer 28 is formed on the opening portion 49. Next, after the mask is removed, as shown in FIG. 4C, the opening portion 49 in which the metal layer 28 is formed on the wiring pattern 24 and the first opening portion 39 are covered with the mask, so that the wiring pad 22 is removed from the second opening portion. 38 exposed. On the wiring pad 22 exposed from the second opening portion 38, a solder layer 26 (also referred to as a metal bump) having a higher protrusion height than the first cladding layer 23 is formed by electrolytic plating. The material of the solder layer 26 which is more prominent than the first cladding layer 23 is suitable for a single metal such as copper, nickel, tin or silver, or an alloy thereof. The thickness of the solder layer 26 is preferably 1 μm or more and 45 μm or less, and preferably 2 μm or more and 20 μm or less. Also, as needed, you can borrow A metal layer 27 is formed between the wiring pad 22 and the solder layer 26 by electrolytic plating.
遮罩M可使用薄膜狀的負型感光性光阻。遮罩M的形成方法，係使用真空壓合機等來形成負型感光性光阻。其次，使用光罩進行紫外線照射。其次，進行顯影。顯影液可使用碳酸鈉溶液。 The mask M can use a film-shaped negative photosensitive photoresist. The method of forming the mask M is to form a negative-type photosensitive photoresist using a vacuum press machine or the like. Next, a reticle is used for ultraviolet irradiation. Next, development is carried out. A sodium carbonate solution can be used as the developer.
其次，藉由剝離液將遮罩M剝離。剝離液例如可使用鹼性水溶性的液體。 Next, the mask M is peeled off by the stripping liquid. As the peeling liquid, for example, an alkaline water-soluble liquid can be used.
其次，將覆蓋第一開口部39的遮罩M去除，如圖5A所示，以遮罩M進行被覆，俾覆蓋第二開口部38並使第一開口部39露出，或覆蓋開口部49。遮罩M可使用薄膜狀的負型感光性光阻。如此，形成了有供電圖案36露出之遮罩M。 Next, the mask M covering the first opening portion 39 is removed, and as shown in FIG. 5A, the mask M is covered, and the second opening portion 38 is covered to expose the first opening portion 39 or cover the opening portion 49. The mask M can use a film-shaped negative photosensitive photoresist. Thus, the mask M having the power supply pattern 36 exposed is formed.
遮罩M的形成方法，係使用例如真空壓合機等來形成負型感光性光阻。其次，使用光罩進行紫外線照射。其次，進行顯影。顯影液可使用碳酸鈉溶液。 The method of forming the mask M is to form a negative-type photosensitive photoresist using, for example, a vacuum press machine. Next, a reticle is used for ultraviolet irradiation. Next, development is carried out. A sodium carbonate solution can be used as the developer.
其次，將自第一開口部39露出的供電圖案36去除(圖5B)。去除方法，可使用使用了藥液之濕蝕刻法。藥液，可使用氯化鐵蝕刻液、過氧化氫-硫酸蝕刻液、氯化銅蝕刻液等。供電圖案36的去除，可使用高壓噴霧方式來進行。藉由使用高壓噴霧，可促進鉛直方法的蝕刻來防止供電圖案的側蝕刻。又，可使用接線墊22間的距離較小之窄間距配線板。又，亦可照射雷射來進行去除。使用了藥液之蝕刻者，相較於雷射加工，絕緣層21的損傷較小，故為較佳的。 Next, the power supply pattern 36 exposed from the first opening portion 39 is removed (FIG. 5B). For the removal method, a wet etching method using a chemical liquid can be used. As the chemical liquid, a ferric chloride etching solution, a hydrogen peroxide-sulfuric acid etching solution, a copper chloride etching solution, or the like can be used. The removal of the power supply pattern 36 can be performed using a high pressure spray method. By using a high pressure spray, the etching of the vertical method can be promoted to prevent side etching of the power supply pattern. Further, a narrow pitch wiring board having a small distance between the wiring pads 22 can be used. Alternatively, the laser can be irradiated for removal. The etcher using the chemical liquid is preferable because the damage of the insulating layer 21 is small compared to the laser processing.
其次，藉由剝離液將遮罩M剝離。剝離液例如可使用鹼性水溶性的液體。 Next, the mask M is peeled off by the stripping liquid. As the peeling liquid, for example, an alkaline water-soluble liquid can be used.
藉由以上步驟，形成了已除去供電圖案之印刷電路板1(圖5B、圖8B)。 By the above steps, the printed circuit board 1 from which the power supply pattern has been removed is formed (Fig. 5B, Fig. 8B).
其次，說明使用了此印刷電路板1之半導體裝置6的製造方法。 Next, a method of manufacturing the semiconductor device 6 using the printed circuit board 1 will be described.
另，本發明並不限於接下來所說明之內容，在可達成本發明目的之範圍內的變更、改良等均包含在本發明之內。 Further, the present invention is not limited to the contents described below, and modifications, improvements, etc. within the scope of the invention are included in the present invention.
(半導體安裝) (semiconductor installation)
將半導體元件5安裝在印刷電路板1上。 The semiconductor element 5 is mounted on the printed circuit board 1.
具體方法雖可由印刷電路板1以及半導體元件5的規格來適當地決定，但可藉由以下方法來進行安裝：以具有助焊活性之黏接劑3將半導體元件的電極與電路基板的連接端子藉由加熱加壓加以連結之方法；將半導體元件的電極與電路基板的連接端子藉由加熱加壓加以連結後，將液狀底部填充物3注入連接部分之方法(圖6A、圖6B)。將具助焊活性之黏接劑3疊層於電路基板1之方法，若是薄膜狀的黏接劑，則可使用真空壓合機等來進行疊層。又，若是液狀的黏接劑，則可使用輥式塗布法、網版印刷法等。又，雖在形成於電路基板上的第一開口部39與黏接劑所疊層之區域中形成有空隙部43，但由於之後的加熱加壓成形使黏接劑流出，空隙部43為黏接劑所埋入(圖7B)。 Although the specific method can be appropriately determined by the specifications of the printed circuit board 1 and the semiconductor element 5, it can be mounted by connecting the electrode of the semiconductor element and the circuit board with the adhesive 3 having the fluxing activity. A method of joining by heating and pressurization, and a method of injecting a liquid underfill 3 into a connecting portion by connecting the electrodes of the semiconductor element and the connection terminals of the circuit board by heating and pressurization (FIGS. 6A and 6B). A method of laminating the flux-bonding adhesive 3 on the circuit board 1 can be carried out by using a vacuum press machine or the like in the case of a film-like adhesive. Moreover, in the case of a liquid adhesive, a roll coating method, a screen printing method, or the like can be used. Further, although the void portion 43 is formed in the region where the first opening portion 39 formed on the circuit board and the adhesive are laminated, the adhesive is discharged by the subsequent heat and pressure molding, and the void portion 43 is adhered. The agent is embedded (Fig. 7B).
(樹脂密封) (resin sealed)
其次，使用環氧樹脂組成物與模具，將設置有半導體元件5的印刷電路板1壓縮成形，以將半導體元件密封於電路基板上。因此，可確保所製得的半導體裝置6之可靠度。 Next, the printed circuit board 1 provided with the semiconductor element 5 is compression-molded using an epoxy resin composition and a mold to seal the semiconductor element on the circuit board. Therefore, the reliability of the fabricated semiconductor device 6 can be ensured.
(搭載焊珠) (equipped with solder beads)
再者，在第二阻焊層25的開口部上形成焊珠29。因此，容易再次安裝在其他基板等。賦予焊珠29之方法，可舉出例如電鍍法、焊膏印刷法、焊珠搭載法。 Further, a bead 29 is formed on the opening of the second solder resist layer 25. Therefore, it is easy to mount it on another substrate or the like. Examples of the method of imparting the beads 29 include a plating method, a solder paste printing method, and a bead mounting method.
(切割) (cutting)
其次，如圖7A所示，將電路基板分割，製得以一個半導體元件與所分割的一個電路基板所構成之複數的半導體裝置6。 Next, as shown in FIG. 7A, the circuit board is divided to form a plurality of semiconductor devices 6 composed of one semiconductor element and one divided circuit board.
[實施例] [Examples]
其次，說明本發明的實施例。 Next, an embodiment of the present invention will be described.
(實施例1) (Example 1)
以與實施形態相同之方法製造出印刷電路板。 A printed circuit board was produced in the same manner as in the embodiment.
如以下方式製作出絕緣層。使樹脂組成物浸滲於玻璃纖維基材中來製作出厚度40μm的預浸體。其次，在預浸體的雙面上，隔著剝離層疊層出支持構件即附有18μm可剝離銅箔之3μm銅箔，以作為第一金屬層以及第二金屬層，並進行加壓加熱成形而製作出厚度82μm的貼金屬疊層板。 An insulating layer was produced as follows. The resin composition was impregnated into the glass fiber substrate to prepare a prepreg having a thickness of 40 μm. Next, on the both sides of the prepreg, a 3 μm copper foil with a peeling copper foil of 18 μm was attached as a support member, as a first metal layer and a second metal layer, and subjected to pressure heating forming. A metal clad laminate having a thickness of 82 μm was produced.
其次，將第一金屬層側的18μm可剝離銅箔剝除後，藉由光阻形成、遮罩曝光、顯影、蝕刻去除、剝離，形成了將第一金屬層的貫穿孔之形成部分選擇性去除之保形遮罩。保形遮罩的開口徑為75μm。 Next, after the 18 μm peelable copper foil on the first metal layer side is stripped, the formation of the through hole of the first metal layer is selectively formed by photoresist formation, mask exposure, development, etching removal, and lift-off. The conformal mask removed. The conformal mask has an opening diameter of 75 μm.
其次，從形成有保形遮罩的第一金屬層面側使用碳酸氣體雷射加工機，照射脈衝寬度3μm、基準能量1.3mJ、光束徑120μm，以進行電漿清洗，藉以製得75μm的貫穿孔。 Next, a carbon gas laser processing machine is used from the first metal layer side on which the conformal mask is formed, and a pulse width of 3 μm, a reference energy of 1.3 mJ, and a beam diameter of 120 μm are irradiated for plasma cleaning. 75 μm through hole.
其次，對第一金屬層上以及絕緣層的貫穿孔內部進行無電解鍍銅而賦予了厚度1μm的導體層。 Next, electroless copper plating was applied to the inside of the first metal layer and the through hole of the insulating layer to provide a conductor layer having a thickness of 1 μm.
其次，將第二金屬層側的18μm可剝離銅箔剝除。 Next, the 18 μm peelable copper foil on the side of the second metal layer was peeled off.
其次，將薄膜狀的負型感光性光阻UFG-255(旭化成ematerials製)壓合在第一金屬層以及第二金屬層上，利用光罩照射 紫外線，進行顯影之後，製得接線墊與供電用的光阻遮罩。 Next, a film-shaped negative photosensitive photoresist UFG-255 (manufactured by Asahi Kasei ematerials) was laminated on the first metal layer and the second metal layer, and irradiated with a photomask. Ultraviolet rays, after development, a wiring pad and a photoresist mask for power supply are produced.
其次，在接線墊上，在液溫25℃、電流密度0.5A/dm2之條件下進行硫酸鍍銅而製得電鍍厚度15μm。其次，藉由剝離液將光阻遮罩剝離，使用過氧化氫-硫酸蝕刻液藉由高壓噴霧方式，來去除接線墊與供電圖案部以外的第一以及第二金屬層以及導體層，藉以形成最小間距70μm的電路圖案。 Next, on the wiring pad, copper plating was performed under the conditions of a liquid temperature of 25 ° C and a current density of 0.5 A/dm 2 to obtain a plating thickness of 15 μm. Next, the photoresist mask is peeled off by the stripping liquid, and the first and second metal layers and the conductor layer other than the wiring pad and the power supply pattern portion are removed by a high pressure spray method using a hydrogen peroxide-sulfuric acid etching solution, thereby forming A circuit pattern with a minimum pitch of 70 μm.
其次，使用片狀感光性阻焊劑PFR-800 SR-1(太陽油墨製)，將之壓合在配線圖案上，利用光罩照射紫外線，在供電圖案上形成第一開口部、及在另一方的面側上形成焊珠搭載用的開口部後，進行顯影，進行後續硬化而形成了第一、第二表面被覆層。 Next, a sheet-like photosensitive solder resist PFR-800 SR-1 (made of solar ink) is used, and this is pressed against the wiring pattern, and the ultraviolet ray is irradiated by the reticle to form a first opening portion on the power supply pattern and on the other side. After the opening for mounting the bead is formed on the surface side, development is performed, and subsequent curing is performed to form the first and second surface coating layers.
其次，使用碳酸氣體雷射，在接線墊上的第一表面被覆層上形成第二開口部。 Next, using a carbon dioxide gas laser, a second opening portion is formed on the first surface coating layer on the wiring pad.
其次，以無電解鍍鎳2.0μm、置換金電鍍0.1μm，對自焊珠搭載用的開口部露出之配線圖案施以表面處理。 Then, the wiring pattern exposed from the opening for mounting the bead was subjected to surface treatment by electroless nickel plating of 2.0 μm and replacement gold plating of 0.1 μm.
其次，將薄膜狀的負型感光性光阻UFG-255(旭化成ematerials製)壓合在第一金屬層以及第二金屬層上，利用光罩照射紫外線，進行顯影之後，製得供電圖案保護用的光阻遮罩。 Next, a film-form negative photosensitive photoresist UFG-255 (manufactured by Asahi Kasei ematerials) is pressed against the first metal layer and the second metal layer, and irradiated with ultraviolet rays by a photomask to develop the power supply pattern. The photoresist mask.
其次，對從第二開口部露出的接線墊，以電解鍍銅15.0μm、電解鍍鎳5μm、電解鍍錫-銀10μm，形成金屬凸塊。 Next, a metal bump was formed on the wiring pad exposed from the second opening by electrolytic copper plating of 15.0 μm, electrolytic nickel plating of 5 μm, and electrolytic tin plating with silver of 10 μm.
其次，將供電圖案保護用的光阻遮罩去除，使用薄膜狀的負型感光性光阻UFG-255(旭化成ematerials製)，將之壓合在第一、第二被覆層以及導電層上，利用光罩照射紫外線，進行顯影之後，露出第一開口部，並覆蓋第二開口部以及第二被覆層側，以此方 式製得光阻遮罩。 Next, the photoresist mask for protecting the power supply pattern is removed, and a film-shaped negative photosensitive photoresist UFG-255 (manufactured by Asahi Kasei ematerials) is used to press it onto the first and second coating layers and the conductive layer. After the ultraviolet ray is irradiated with a photomask and developed, the first opening portion is exposed, and the second opening portion and the second coating layer side are covered. A photoresist mask is produced.
其次，使用氯化鐵蝕刻液，將自第一開口部露出的供電圖案藉由高壓噴霧方式去除之後，去除光阻遮罩，而製得印刷電路板。 Next, using a ferric chloride etching solution, the power supply pattern exposed from the first opening portion is removed by a high-pressure spray method, and then the photoresist mask is removed to obtain a printed circuit board.
將片狀附助焊活性機能黏接劑壓合在所製得之印刷電路板的第一被覆層上，藉由加壓加熱安裝了半導體元件(TEG晶片、尺寸15mm×15mm、厚度0.8mm)。 A sheet-like auxiliary active bonding adhesive is pressed onto the first coating layer of the obtained printed circuit board, and a semiconductor element (TEG wafer, size 15 mm × 15 mm, thickness 0.8 mm) is mounted by pressure heating. .
其次，使用環氧樹脂組成物對設置有半導體元件的印刷電路板進行壓縮成形，來將半導體元件密封於印刷電路板上，藉由切割將印刷電路板分割，而製得了由半導體元件與所分割的一個印刷電路板所構成之複數的半導體裝置。即使接線墊間距離為250μm之狹小間隔，亦可在接線墊間設置供電圖案，可不使步驟複雜化而以高產出製得半導體裝置。 Next, a printed circuit board provided with a semiconductor element is compression-molded using an epoxy resin composition to seal the semiconductor element on a printed circuit board, and the printed circuit board is divided by dicing to obtain a semiconductor element and a divided portion. A plurality of semiconductor devices formed by one printed circuit board. Even if the distance between the wiring pads is a narrow interval of 250 μm, a power supply pattern can be provided between the wiring pads, and the semiconductor device can be manufactured with high output without complicating the steps.
根據本發明，可提供一種不會使步驟複雜化並對應小型高密度化之印刷電路板之製造方法、印刷電路板及半導體裝置，故本發明在產業上極為有用。 According to the present invention, it is possible to provide a printed circuit board manufacturing method, a printed circuit board, and a semiconductor device which do not complicate the steps and which are small in size and high in density. Therefore, the present invention is extremely useful industrially.
1‧‧‧印刷電路板 1‧‧‧Printed circuit board
3‧‧‧黏接劑 3‧‧‧Adhesive
5‧‧‧半導體元件 5‧‧‧Semiconductor components
6‧‧‧半導體裝置 6‧‧‧Semiconductor device
10‧‧‧貼金屬疊層板 10‧‧‧Metal laminated board
11‧‧‧第一金屬層 11‧‧‧First metal layer
12‧‧‧第二金屬層 12‧‧‧Second metal layer
13‧‧‧支持構件 13‧‧‧Support components
15‧‧‧導體層 15‧‧‧Conductor layer
17‧‧‧剝離層 17‧‧‧ peeling layer
19‧‧‧貫穿孔 19‧‧‧through holes
20‧‧‧導電體 20‧‧‧Electric conductor
21‧‧‧絕緣層 21‧‧‧Insulation
22‧‧‧接線墊 22‧‧‧Wiring pads
23‧‧‧第一被覆層(第一阻焊層) 23‧‧‧First coating (first solder mask)
24‧‧‧配線圖案 24‧‧‧Wiring pattern
25‧‧‧第二被覆層(第二阻焊層) 25‧‧‧Second coating (second solder mask)
26‧‧‧焊料層 26‧‧‧ solder layer
27‧‧‧金屬層 27‧‧‧metal layer
28‧‧‧金屬層 28‧‧‧metal layer
29‧‧‧焊珠 29‧‧‧welds
36‧‧‧供電圖案 36‧‧‧Power supply pattern
37‧‧‧供電圖案的端面 37‧‧‧End face of the power supply pattern
38‧‧‧第二開口部 38‧‧‧second opening
39‧‧‧第一開口部 39‧‧‧First opening
43‧‧‧空隙部 43‧‧‧Voids
49‧‧‧開口部 49‧‧‧ openings
271‧‧‧銅層 271‧‧‧ copper layer
272‧‧‧鎳層 272‧‧‧ Nickel layer
M‧‧‧遮罩 M‧‧‧ mask
圖1係有關本發明一實施形態之電路基板的剖面圖。 Fig. 1 is a cross-sectional view showing a circuit board according to an embodiment of the present invention.
圖2A係顯示電路基板的製造步驟之剖面圖。 2A is a cross-sectional view showing a manufacturing step of a circuit board.
圖2B係顯示電路基板的製造步驟之剖面圖。 2B is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖2C係顯示電路基板的製造步驟之剖面圖。 2C is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖2D係顯示電路基板的製造步驟之剖面圖。 2D is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖3A係顯示電路基板的製造步驟之剖面圖。 Fig. 3A is a cross-sectional view showing a manufacturing step of a circuit board.
圖3B係顯示電路基板的製造步驟之剖面圖。 Fig. 3B is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖3C係顯示電路基板的製造步驟之剖面圖。 Fig. 3C is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖3D係顯示電路基板的製造步驟之剖面圖。 3D is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖4A係顯示電路基板的製造步驟之剖面圖。 4A is a cross-sectional view showing a manufacturing step of a circuit board.
圖4B係顯示電路基板的製造步驟之剖面圖。 4B is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖4C係顯示電路基板的製造步驟之剖面圖。 4C is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖5A係顯示電路基板的製造步驟之剖面圖。 Fig. 5A is a cross-sectional view showing a manufacturing step of a circuit board.
圖5B係顯示電路基板的製造步驟之剖面圖。 Fig. 5B is a cross-sectional view showing a manufacturing step of the circuit substrate.
圖6A係顯示將半導體晶片搭載於電路基板上的步驟之圖。 Fig. 6A is a view showing a step of mounting a semiconductor wafer on a circuit board.
圖6B係顯示將半導體晶片搭載於電路基板上的步驟之圖。 Fig. 6B is a view showing a step of mounting a semiconductor wafer on a circuit board.
圖7A係顯示半導體裝置之圖。 Fig. 7A is a view showing a semiconductor device.
圖7B係顯示半導體裝置之圖。 Fig. 7B is a view showing a semiconductor device.
圖8A係顯示接線墊與供電圖案的連接例之示意圖。 Fig. 8A is a view showing a connection example of a wiring pad and a power supply pattern.
圖8B係顯示接線墊與供電圖案的連接例之示意圖。 Fig. 8B is a schematic view showing a connection example of a wiring pad and a power supply pattern.
1‧‧‧印刷電路板 1‧‧‧Printed circuit board
20‧‧‧導電體 20‧‧‧Electric conductor
21‧‧‧絕緣層 21‧‧‧Insulation
22‧‧‧接線墊 22‧‧‧Wiring pads
23‧‧‧第一被覆層(第一阻焊層) 23‧‧‧First coating (first solder mask)
24‧‧‧配線圖案 24‧‧‧Wiring pattern
25‧‧‧第二被覆層(第二阻焊層) 25‧‧‧Second coating (second solder mask)
26‧‧‧焊料層 26‧‧‧ solder layer
27‧‧‧金屬層 27‧‧‧metal layer
29‧‧‧焊珠 29‧‧‧welds
37‧‧‧供電圖案的端面 37‧‧‧End face of the power supply pattern
38‧‧‧第二開口部 38‧‧‧second opening
39‧‧‧第一開口部 39‧‧‧First opening
271‧‧‧銅層 271‧‧‧ copper layer
272‧‧‧鎳層 272‧‧‧ Nickel layer
Claims (15)
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| TW101110631A TW201340815A (en) | 2012-03-27 | 2012-03-27 | A method of manufacturing a printed circuit board, a printed circuit board and a semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| TW101110631A TW201340815A (en) | 2012-03-27 | 2012-03-27 | A method of manufacturing a printed circuit board, a printed circuit board and a semiconductor device |
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| TW201340815A true TW201340815A (en) | 2013-10-01 |
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|---|---|---|---|
| TW101110631A TW201340815A (en) | 2012-03-27 | 2012-03-27 | A method of manufacturing a printed circuit board, a printed circuit board and a semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201340815A (en) |
-
2012
- 2012-03-27 TW TW101110631A patent/TW201340815A/en unknown
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