TW201339336A - Evaporation source and vacuum evaporation apparatus using the same - Google Patents
Evaporation source and vacuum evaporation apparatus using the same Download PDFInfo
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- TW201339336A TW201339336A TW102105598A TW102105598A TW201339336A TW 201339336 A TW201339336 A TW 201339336A TW 102105598 A TW102105598 A TW 102105598A TW 102105598 A TW102105598 A TW 102105598A TW 201339336 A TW201339336 A TW 201339336A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Abstract
Description
有關在真空下加熱蒸鍍材料而使蒸鍍粒子產生，在基板上形成蒸鍍材料的膜之真空蒸鍍裝置。 A vacuum vapor deposition apparatus for heating a vapor deposition material under vacuum to generate vapor deposition particles and forming a film of a vapor deposition material on a substrate.
簡單說明一般性的有機電致發光元件(以下稱為有機EL元件)。 A general organic electroluminescence device (hereinafter referred to as an organic EL device) will be briefly described.
有機EL元件是在基板上依陽極、電洞輸送層、發光層、電子輸送層、電子注入層、陰極的順序形成膜，藉由在陽極與陰極之間流動電流來發光。 The organic EL device forms a film on the substrate in the order of an anode, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, and emits light by flowing a current between the anode and the cathode.
特別是有關從電洞輸送層到電子注入層是藉由真空蒸鍍或印刷或塗佈來形成有機化合物或無機化合物，在陽極上形成積層構造體。而且，以真空蒸鍍或濺射在積層構造體上形成鎂．銀或鋁等的金屬膜，設置陰極。如此形成有機EL元件。 In particular, from the hole transport layer to the electron injecting layer, an organic compound or an inorganic compound is formed by vacuum evaporation or printing or coating, and a laminated structure is formed on the anode. Moreover, magnesium is formed on the laminated structure by vacuum evaporation or sputtering. A metal film such as silver or aluminum is provided with a cathode. The organic EL element is thus formed.
使用圖2來說明一般性的真空蒸鍍方法的例子。 An example of a general vacuum evaporation method will be described using FIG.
在圖2中，真空蒸鍍裝置1是具備：真空腔室2、真空泵3及蒸發源4。真空腔室2是成為密閉容器，在其內部配置有蒸發源4及蒸鍍對象的基板5。並且，真空腔室 2的內部是在對基板5成膜時，需要保持10-3~10-6Pa的真空度，因此藉由真空泵3來真空排氣。在蒸發源4是加熱蒸鍍材料而使氣化，對基板5吹上而成膜。此時，對於基板5的大型化是可使基板5旋轉，或使基板5或蒸發源4的任一方移動來進行成膜。 In FIG. 2, the vacuum vapor deposition apparatus 1 is equipped with the vacuum chamber 2, the vacuum pump 3, and the evaporation source 4. The vacuum chamber 2 is a sealed container, and an evaporation source 4 and a substrate 5 to be vapor-deposited are disposed inside the vacuum chamber 2 . Further, the inside of the vacuum chamber 2 is required to maintain a degree of vacuum of 10 -3 to 10 -6 Pa when the substrate 5 is formed, so that it is evacuated by the vacuum pump 3. The evaporation source 4 is heated and vaporized to vaporize, and the substrate 5 is blown to form a film. At this time, the enlargement of the substrate 5 is such that the substrate 5 can be rotated or one of the substrate 5 or the evaporation source 4 can be moved to form a film.
若簡單說明一般性的蒸發源構造的例子，則將蒸鍍材料封入內部的坩堝是藉由加熱器來加熱。藉此，蒸鍍材料氣化，可由設在坩堝的蓋的開口來使蒸鍍材料的氣體朝基板放出於上方。 When the example of the general evaporation source structure is briefly explained, the crucible in which the vapor deposition material is sealed inside is heated by a heater. Thereby, the vapor deposition material is vaporized, and the gas of the vapor deposition material can be placed upward toward the substrate by the opening provided in the lid of the crucible.
上述的坩堝是由坩堝本體、上蓋及中蓋所構成。坩堝本體是藉由構造體來支撐，藉由加熱手段的加熱器來輻射加熱而使蒸鍍材料蒸發。 The above-mentioned crucible is composed of a crucible body, an upper cover and a middle cover. The crucible body is supported by the structure, and the evaporation material is evaporated by heating by a heater of a heating means.
藉此，在配置於坩堝的上方的基板形成膜。為了控制加熱器的輸出，藉由熱電偶來測定坩堝的底部溫度。而且，在加熱器的外周部設置有反射器，構成來自加熱器的輻射熱會集中於坩堝內。 Thereby, a film is formed on the substrate disposed above the crucible. In order to control the output of the heater, the bottom temperature of the crucible was measured by a thermocouple. Further, a reflector is provided on the outer peripheral portion of the heater, and radiant heat from the heater is concentrated in the crucible.
〔專利文獻1〕日本特開2008-24998號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-24998
就上述以往技術而言，從坩堝的噴嘴放出的蒸鍍材料的蒸氣大多數是朝向基板的方向移動。但，其中 會發生朝向蒸發源的內部進入的蒸氣的粒子，或從坩堝本體與上蓋的間隙洩出者。 In the above-described conventional technique, most of the vapor of the vapor deposition material discharged from the nozzle of the crucible moves in the direction toward the substrate. But where Particles of vapor entering the interior of the evaporation source may occur, or may be leaked from the gap between the crucible body and the upper cover.
進入蒸發源的內部的蒸鍍材料的蒸氣的粒子，對於和反射器(Reflector)的外部連接的構件，例如構造構件或加熱器的端子及熱電偶等，會集中於蒸發源內部的低溫的構件而凝縮析出。 The particles of the vapor of the vapor deposition material entering the inside of the evaporation source are concentrated on a member connected to the outside of the reflector, for example, a terminal of a structural member or a heater, a thermocouple, or the like, and are concentrated in a low-temperature member inside the evaporation source. And condensed and precipitated.
一旦有機化合物的蒸鍍材料析出，則在有機蒸鍍中，會因為接受長時間加熱器的熱而分解，產生影響膜質的雜質。並且，在無機化合物的蒸鍍材料時，也會有蒸鍍材料附著的構件貼附，維修時無法分解各構件的情形。特別是若以金屬材料作為蒸鍍材料，則也有可能在加熱器的端子間等發生短路。該等的問題點是在以往技術的蒸發源未被解決。 When the vapor deposition material of the organic compound is precipitated, in the organic vapor deposition, the heat of the heater is decomposed for a long time, and impurities affecting the film quality are generated. Further, in the case of the vapor deposition material of the inorganic compound, the member to which the vapor deposition material adheres may be attached, and the members may not be decomposed during maintenance. In particular, when a metal material is used as the vapor deposition material, a short circuit may occur between the terminals of the heater or the like. The problem with these is that the evaporation source of the prior art has not been solved.
對於此，在專利文獻1所示的蒸發源，未揭示針對有關在上述所示的蒸發源內部析出蒸鍍材料的問題的解決方案。 In this regard, the evaporation source shown in Patent Document 1 does not disclose a solution to the problem of depositing a vapor deposition material inside the evaporation source described above.
本發明的目的是在於提供一種即使蒸鍍材料進入蒸發源內部，還是可防止膜質的劣化，對於連續運轉或維修不會產生阻礙之蒸發源及真空蒸鍍裝置。 An object of the present invention is to provide an evaporation source and a vacuum vapor deposition apparatus which can prevent deterioration of film quality even if a vapor deposition material enters the inside of an evaporation source, and which does not hinder continuous operation or maintenance.
為了達成上述目的，本發明是在藉由：具有用以放出將被封入的蒸鍍材料加熱而蒸發的蒸鍍材料的噴嘴之坩堝、及用以加熱此坩堝的加熱手段、及配置在前述 坩堝與前述加熱手段的周邊之隔熱手段(第1隔熱手段)所構成的蒸發源中，在前述隔熱手段與坩堝或加熱手段之間設置被保持於比該加熱手段還低溫的浮游蒸鍍物回收手段，且在此浮游蒸鍍物回收手段與前述坩堝及前述加熱手段之間設置隔熱手段(第2隔熱手段)。 In order to achieve the above object, the present invention is provided by a nozzle having a vapor deposition material for evaporating a vapor deposition material to be sealed, and a heating means for heating the crucible, and disposed in the foregoing In the evaporation source formed by the heat insulating means (first heat insulating means) around the heating means, a floating steam which is kept at a lower temperature than the heating means is provided between the heat insulating means and the crucible or the heating means. In the plating material recovery means, a heat insulating means (second heat insulating means) is provided between the floating vapor deposition material recovery means and the crucible and the heating means.
前述加熱手段亦可與前述坩堝一體，或設於坩堝的內部。 The heating means may be integral with the crucible or provided inside the crucible.
前述加熱手段亦可利用電阻加熱來發熱。 The heating means can also generate heat by resistance heating.
前述加熱手段亦可配置於前述坩堝之外，且使用電阻加熱、感應加熱、紅外線加熱的任一種加熱手段。 The heating means may be disposed outside the crucible, and may be any one of electric heating, induction heating, and infrared heating.
前述第1隔熱手段亦可為至少覆蓋前述浮游蒸鍍物回收手段相對於前述坩堝及加熱手段的對向面之形狀。 The first heat insulating means may have a shape that covers at least the opposing surface of the floating vapor deposition material recovery means with respect to the crucible and the heating means.
並且，為了達成上述目的，本發明較理想是前述第1隔熱手段為層疊單數或複數的板之構造為佳。 Further, in order to achieve the above object, in the present invention, it is preferable that the first heat insulating means is a structure in which a single or plural number of sheets are stacked.
並且，為了達成上述目的，本發明較理想是前述第1隔熱手段係使用碳．金屬．陶瓷的任一種或複數種所形成的板為佳。 Further, in order to achieve the above object, the present invention preferably uses the carbon as the first heat insulating means. metal. It is preferred that any one or more of the ceramics are formed.
並且，為了達成上述目的，本發明較理想是前述第2隔熱手段為層疊單數或複數的板之構造為佳。 Further, in order to achieve the above object, in the present invention, it is preferable that the second heat insulating means is a structure in which a single or plural number of sheets are stacked.
並且，為了達成上述目的，本發明較理想是前述第2隔熱手段係使用碳．金屬．陶瓷的任一種或複數種 所形成的板為佳。 Moreover, in order to achieve the above object, the present invention preferably uses the carbon as the second heat insulating means. metal. Any or a plurality of ceramics The formed plate is preferred.
並且，為了達成上述目的，本發明較理想是在前述浮游蒸鍍物回收手段的周圍設置可裝卸的罩，此罩係與冷卻手段至少部分地接觸而被冷卻為佳。 Further, in order to achieve the above object, in the present invention, it is preferable that a detachable cover is provided around the floating vapor deposition material recovery means, and the cover is cooled at least partially in contact with the cooling means.
並且，為了達成上述目的，本發明較理想是將前述浮游蒸鍍物回收手段設在前述坩堝之具有噴嘴的面以外為佳。 Further, in order to achieve the above object, in the present invention, it is preferable that the floating vapor deposition material recovery means is provided outside the surface of the crucible having the nozzle.
並且，為了達成上述目的，本發明較理想是前述浮游蒸鍍物回收裝置係藉由循環的冷卻媒體來冷卻為佳。 Further, in order to achieve the above object, in the present invention, it is preferable that the floating vapor deposition material recovery device is cooled by a circulating cooling medium.
並且，為了達成上述目的，本發明較理想是前述冷卻媒體係循環於外殼的壁本身，且前述外殼與前述浮游蒸鍍物回收手段係熱性地接觸為佳。 Further, in order to achieve the above object, in the present invention, it is preferable that the cooling medium is circulated to the wall itself of the outer casing, and the outer casing is preferably in thermal contact with the floating vapor deposition recovery means.
並且，用以達成上述目的之本發明的構成是使用前述蒸發源的任一個的真空蒸鍍裝置。 Further, the configuration of the present invention for achieving the above object is a vacuum vapor deposition apparatus using any of the above-described evaporation sources.
若根據本發明，則可提供一種即使蒸鍍材料進入蒸發源內部，還是可防止膜質的劣化，對於連續運轉或維修不會產生阻礙之真空蒸鍍裝置及蒸發源。 According to the present invention, it is possible to provide a vacuum vapor deposition apparatus and an evaporation source which can prevent deterioration of the film quality even if the vapor deposition material enters the inside of the evaporation source, and which does not hinder continuous operation or maintenance.
1‧‧‧真空蒸鍍裝置 1‧‧‧Vacuum evaporation device
2‧‧‧腔室 2‧‧‧ chamber
3‧‧‧真空泵 3‧‧‧vacuum pump
4‧‧‧蒸發源 4‧‧‧ evaporation source
5‧‧‧基板 5‧‧‧Substrate
6‧‧‧閘閥 6‧‧‧ gate valve
7‧‧‧真空搬送室 7‧‧‧vacuum transfer room
8‧‧‧基板儲料室 8‧‧‧Substrate storage room
9‧‧‧真空搬送機械手臂 9‧‧‧Vacuum transport robot
10‧‧‧基板 10‧‧‧Substrate
11‧‧‧蒸發源 11‧‧‧ evaporation source
12‧‧‧遮罩 12‧‧‧ mask
13‧‧‧基板保持部 13‧‧‧Substrate retention department
14‧‧‧閘閥 14‧‧‧ gate valve
16‧‧‧真空蒸鍍腔室 16‧‧‧Vacuum evaporation chamber
21‧‧‧蒸發材料 21‧‧‧Evaporation materials
22‧‧‧坩堝 22‧‧‧坩埚
25‧‧‧熱電偶 25‧‧‧ thermocouple
24‧‧‧反射器 24‧‧‧ reflector
26‧‧‧速率感測器 26‧‧‧ rate sensor
27‧‧‧外殼 27‧‧‧Shell
28‧‧‧冷卻區塊 28‧‧‧cooling block
34‧‧‧噴嘴 34‧‧‧Nozzles
43‧‧‧隔熱手段 43‧‧‧Insulation means
44‧‧‧加熱手段(加熱器23) 44‧‧‧heating means (heater 23)
45‧‧‧冷卻手段(浮游蒸鍍物回收手段) 45‧‧‧Cooling means (recovery of floating vapor deposition)
46‧‧‧熱輻射隔熱手段 46‧‧‧ Thermal radiation insulation
50‧‧‧端子 50‧‧‧terminal
51‧‧‧水冷配管 51‧‧‧Water-cooled piping
52‧‧‧冷卻劑 52‧‧‧ coolant
52a冷卻劑流通孔 52a coolant flow hole
52b‧‧‧U形轉彎部 52b‧‧‧U-turn
100‧‧‧有機EL裝置製造裝置 100‧‧‧Organic EL device manufacturing device
圖1是本發明的實施例的真空蒸鍍裝置的基本構成的 概略圖。 1 is a view showing the basic configuration of a vacuum evaporation apparatus according to an embodiment of the present invention. Schematic diagram.
圖2是一般性的真空蒸鍍之成膜裝置的概略構成圖。 2 is a schematic configuration diagram of a general film deposition apparatus for vacuum vapor deposition.
圖3是本發明的實施例的真空蒸鍍裝置的概略構成圖。 Fig. 3 is a schematic configuration diagram of a vacuum vapor deposition device according to an embodiment of the present invention.
圖4是本發明的實施例的有機EL裝置製造裝置的概略構成圖。 4 is a schematic configuration diagram of an apparatus for manufacturing an organic EL device according to an embodiment of the present invention.
圖5是表示本發明的其他實施例的蒸發源的冷卻手段的圖。 Fig. 5 is a view showing a cooling means of an evaporation source according to another embodiment of the present invention.
圖6是表示本發明的其他實施例的蒸發源的冷卻手段的圖。 Fig. 6 is a view showing a cooling means of an evaporation source according to another embodiment of the present invention.
以下，按照圖來說明本發明的一實施例。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
根據圖面來說明用以實施本發明的最佳形態。 The best mode for carrying out the invention will be described based on the drawings.
圖1是本發明的實施例的真空蒸鍍裝置的基本構成的概略圖。利用圖1來說明本發明的實施例的真空蒸鍍裝置的概要。 Fig. 1 is a schematic view showing a basic configuration of a vacuum vapor deposition device according to an embodiment of the present invention. An outline of a vacuum vapor deposition apparatus according to an embodiment of the present invention will be described with reference to Fig. 1 .
在圖1中，真空蒸鍍裝置1是具有真空容器的腔室2，其中配置有放出蒸鍍材料21的蒸氣的蒸發源4及被蒸鍍物的基板5。在蒸鍍時為了使腔室2內部形成比10-3Pa更高的真空度，而藉由連接至腔室2的真空泵3來經常真 空排氣。在此，基板5不是構成真空蒸鍍裝置1者，而是藉由真空蒸鍍裝置1來成膜者。 In FIG. 1, the vacuum vapor deposition apparatus 1 is a chamber 2 having a vacuum vessel in which an evaporation source 4 that discharges vapor of the vapor deposition material 21 and a substrate 5 on which a vapor deposition material is deposited are disposed. In order to make the inside of the chamber 2 form a vacuum higher than 10 -3 Pa at the time of vapor deposition, it is often evacuated by vacuum pump 3 connected to the chamber 2. Here, the substrate 5 is formed by the vacuum vapor deposition device 1 instead of the vacuum vapor deposition device 1.
開始減壓之後，藉由蒸發源4的加熱手段44來加熱坩堝22。藉由此加熱，蒸鍍材料21會被蒸發或昇華，而產生蒸鍍材料21的蒸氣，在基板5成膜。在此使用的基板5是使用玻璃、陶瓷、金屬、有機物的任一種的平板。例如，在形成有機EL元件時，在基板5的蒸鍍面預先形成陽極。 After the decompression is started, the crucible 22 is heated by the heating means 44 of the evaporation source 4. By this heating, the vapor deposition material 21 is evaporated or sublimated, and the vapor of the vapor deposition material 21 is generated to form a film on the substrate 5. The substrate 5 used herein is a flat plate using any of glass, ceramic, metal, and organic matter. For example, when an organic EL element is formed, an anode is formed in advance on the vapor deposition surface of the substrate 5.
有機EL元件的各層是使用其次那樣的材料。陽極是例如ITO、金、碘化銅、氧化錫等電洞注入能力高，功函數大的金屬或合金之電氣傳導性化合物為理想。 Each layer of the organic EL element is a material that uses the next. The anode is preferably an electrically conductive compound of a metal or an alloy having a high hole injection capability such as ITO, gold, copper iodide or tin oxide and having a large work function.
電洞注入層是例如使用CuPc或m-MTDATA。電洞輸送層是例如使用α-NPD、TPD、PDA。發光層是例如在主材料使用紅螢稀、CBP、CDBP、Alq3，在摻雜劑材料使用香豆素6、Ir(ppy)3，FIrpic等。電子輸送層是例如使用Alq3，PBD，TAZ，BND，OXD等。電子注入層是例如使用LiF、BCP，鍶等。陰極是使用Mg-Ag共蒸鍍膜、Al等。 The hole injection layer is, for example, CuPc or m-MTDATA. The hole transport layer is, for example, α-NPD, TPD, or PDA. The light-emitting layer is, for example, red phosgene, CBP, CDBP, and Alq3 in the main material, and coumarin 6, Ir(ppy) 3, FIrpic, or the like in the dopant material. The electron transport layer is, for example, Alq3, PBD, TAZ, BND, OXD or the like. The electron injecting layer is, for example, LiF, BCP, helium or the like. The cathode is a Mg-Ag co-deposited film, Al or the like.
蒸鍍是使用藉由坩堝22、加熱手段44、隔熱手段43所構成的蒸發源4來進行蒸鍍。藉由加熱手段44來加熱封入蒸鍍材料21的坩堝22，使產生蒸鍍材料21的蒸氣。然後，藉由設在坩堝22的噴嘴34來朝基板5放出，藉此進行成膜。該等坩堝22、加熱手段44、隔熱手段43等是被收納於外殼27。另外、加熱手段44是只要 能夠加熱坩堝內部的蒸鍍材料即可，因此即是在坩堝的內部也無妨。以下的實施例2~3也同樣加熱手段44的位置不論坩堝的內外可設置。 The vapor deposition is performed by using the evaporation source 4 composed of the crucible 22, the heating means 44, and the heat insulating means 43. The crucible 22 sealed in the vapor deposition material 21 is heated by the heating means 44 to generate the vapor of the vapor deposition material 21. Then, it is discharged toward the substrate 5 by the nozzles 34 provided on the crucible 22, whereby film formation is performed. The crucible 22, the heating means 44, the heat insulating means 43, and the like are housed in the outer casing 27. In addition, the heating means 44 is as long as It is only necessary to heat the vapor deposition material inside the crucible, and therefore it is also possible to be inside the crucible. In the following Examples 2 to 3, the position of the heating means 44 can be set regardless of the inside and outside of the crucible.
蒸發源4的控制是在蒸發源4內部設置熱電偶，以使坩堝22或其環境溫度能夠形成預定的溫度之方式調整往加熱手段44的投入電力者。或，亦可在蒸發源4與基板之間所設的空間設置速率感測器26，以此速率感測器26的每單位時間的蒸鍍速率能夠形成預定的值之方式調整加熱手段44的投入電力。25是熱電偶。50是端子。 The evaporation source 4 is controlled by providing a thermocouple inside the evaporation source 4 to adjust the input power to the heating means 44 in such a manner that the crucible 22 or its ambient temperature can form a predetermined temperature. Alternatively, a rate sensor 26 may be disposed in a space provided between the evaporation source 4 and the substrate, and the heating means 44 may be adjusted in such a manner that the evaporation rate per unit time of the rate sensor 26 can form a predetermined value. Put in electricity. 25 is a thermocouple. 50 is the terminal.
在基板5大型化時是使基板5旋轉，自旋轉軸錯開蒸發源4的狀態下固定，或使基板5或蒸發源4的任一方移動於蒸氣噴出方向及垂直方向。特別是後者的情況是只要使噴嘴34排列於基板的寬度方向，使基板5或蒸發源4移動於排列方向及直角方向即可。 When the substrate 5 is increased in size, the substrate 5 is rotated, and the evaporation source 4 is fixed from the rotation axis, or either the substrate 5 or the evaporation source 4 is moved in the vapor discharge direction and the vertical direction. In particular, in the latter case, the nozzles 34 may be arranged in the width direction of the substrate, and the substrate 5 or the evaporation source 4 may be moved in the arrangement direction and the direction perpendicular to the direction.
為了連續對不同的基板5進行蒸鍍，只要在腔室2設置閘閥6，使處理完成的基板5原封不動維持真空的狀態移動至別的腔室2，保持相同的真空度搬入未處理的基板5即可。 In order to continuously vapor-deposit the different substrates 5, the gate valve 6 is provided in the chamber 2, and the processed substrate 5 is moved to the other chamber 2 in a state where the vacuum is maintained as it is, and the untreated substrate is carried in the same degree of vacuum. 5 can be.
如此可謀求蒸鍍裝置及蒸發源的運用。本發明的蒸發源4也可與上述同樣運用。 In this way, the operation of the vapor deposition device and the evaporation source can be achieved. The evaporation source 4 of the present invention can also be used in the same manner as described above.
以下，利用圖1來說明有關本發明的蒸發源。 Hereinafter, an evaporation source according to the present invention will be described using FIG.
另外，在本實施例所示的圖是顯示全部將基板5的成 膜面朝下處理的形態的例子，但本發明可不拘成膜面的面向來適用。 In addition, the figure shown in this embodiment shows that all of the substrate 5 is formed. An example of a form in which the film is processed face down, but the present invention can be applied without depending on the surface of the film surface.
在圖1中，蒸發源4是藉由：封入蒸鍍材料21且具有用以放出蒸鍍材料21的噴嘴34之坩堝22、及在坩堝22的外部用以加熱坩堝22之加熱手段44、及配置在坩堝22及加熱手段44的周邊之隔熱手段(第1隔熱手段)43所構成。而且，在隔熱手段43與坩堝22或加熱手段44之間設有冷卻手段45(浮游蒸鍍物回收手段)。 In FIG. 1, the evaporation source 4 is formed by enclosing the vapor deposition material 21 and having a nozzle 34 for discharging the vapor deposition material 21, and a heating means 44 for heating the crucible 22 outside the crucible 22, and The heat insulating means (first heat insulating means) 43 is disposed around the crucible 22 and the heating means 44. Further, between the heat insulating means 43 and the crucible 22 or the heating means 44, a cooling means 45 (floating vapor deposition means) is provided.
可藉由此冷卻手段45來誘捕射入蒸發源4內的材料蒸氣的粒子，選擇性地使析出。藉此，可使往周圍的構件之析出降低至最小限度。此冷卻手段45的溫度相較於蒸鍍材料蒸發的溫度，為充分低的溫度，例如若是昇華的蒸鍍材料，則為昇華點以下，若是蒸發的材料，則保持於融點以下的溫度為理想。 The particles of the material vapor injected into the evaporation source 4 can be trapped by the cooling means 45 to selectively precipitate. Thereby, the precipitation of the surrounding members can be minimized. The temperature of the cooling means 45 is sufficiently lower than the temperature at which the vapor deposition material evaporates. For example, if it is a sublimation vapor deposition material, it is below the sublimation point, and if it is an evaporation material, the temperature below the melting point is ideal.
另一方面，在將冷卻手段45設置於上述的位置時，因為明顯吸收坩堝22或加熱手段44的輻射熱，所以坩堝內的蒸鍍材料的溫度下降，蒸鍍本身產生阻礙。為了防止此情形，以坩堝22及加熱手段44無法直視冷卻手段45的方式設置熱輻射隔熱手段(第2隔熱手段)46。 On the other hand, when the cooling means 45 is placed at the above position, since the radiant heat of the crucible 22 or the heating means 44 is significantly absorbed, the temperature of the vapor deposition material in the crucible drops, and the vapor deposition itself is hindered. In order to prevent this, the heat radiation heat insulating means (second heat insulating means) 46 is provided so that the crucible 22 and the heating means 44 cannot directly look at the cooling means 45.
此熱輻射隔熱手段46是緊貼或不緊貼於冷卻手段45皆無妨。只要加熱手段44或面對坩堝22的最表面的溫度比冷卻手段45的溫度更充分高，不影響坩堝22內的蒸鍍材料21的蒸發即可。並且，只要是冷卻手段45 的一部分露出於隔熱手段43所包圍的領域中的構造即可。 The heat radiation heat insulating means 46 may be attached to or not in close contact with the cooling means 45. As long as the temperature of the heating means 44 or the outermost surface facing the crucible 22 is sufficiently higher than the temperature of the cooling means 45, the evaporation of the vapor deposition material 21 in the crucible 22 is not affected. And, as long as it is a cooling means 45 A part of the structure may be exposed in a field surrounded by the heat insulating means 43.
在圖3(A)顯示作為電阻加熱式的加熱手段44(加熱器23)使用的例子。 An example of use as the resistance heating type heating means 44 (heater 23) is shown in Fig. 3(A).
在圖3(A)中，若加熱器23的發熱體為700℃以下，則由於與周圍的絶緣對策簡便，因此使用夾套加熱器較容易管理，所以較理想。超過700℃時，特別是1000℃以上，將Mo，Ta，W等的金屬或其合金的金屬線捲於陶瓷框來構成加熱器為佳。陶瓷框的材質是氧化鋁、SiC、氮化硼、氮化鋁等在高溫絶緣性佳的材質為理想。加熱器23是構成甜甜圈狀或上下又左右等2分割或2分割以上也無妨。只要坩堝22及蒸鍍材料21不會不均一加熱，將加熱器23怎樣構成皆可。加熱手段44是除了電阻加熱以外，亦可使用感應加熱或紅外線加熱。 In FIG. 3(A), when the heating element of the heater 23 is 700 ° C or less, since the insulation measures against the surroundings are simple, it is preferable to use a jacket heater for easy management. When the temperature exceeds 700 ° C, particularly 1000 ° C or higher, it is preferable to form a heater by winding a metal wire of a metal such as Mo, Ta, or W or an alloy thereof on a ceramic frame. The material of the ceramic frame is preferably a material excellent in high-temperature insulation such as alumina, SiC, boron nitride or aluminum nitride. The heater 23 may be formed in a donut shape, a vertical division, a right and left, or the like, or may be divided into two or more divisions. As long as the crucible 22 and the vapor deposition material 21 are not unevenly heated, the heater 23 can be configured. The heating means 44 may be inductive heating or infrared heating in addition to resistance heating.
在以加熱器23包圍的領域中收納坩堝22。在圖3中，坩堝22與加熱器23是非接觸，但只要不會因坩堝22與加熱器23的直接或間接性的接觸而發生短路、漏電，即使接觸也無妨。 The crucible 22 is housed in a field surrounded by the heater 23. In FIG. 3, the crucible 22 is not in contact with the heater 23, but it may be caused by short-circuit or electric leakage due to direct or indirect contact of the crucible 22 with the heater 23.
坩堝22的材質是金屬材料Mo，Ta，W等的金屬或含該等的合金為理想。陶瓷材料是氧化鋁、SiC、氮化硼、氮化鋁等為理想，其他石墨碳等的材質也可使用。 The material of the crucible 22 is preferably a metal such as a metal material such as Mo, Ta, or W or an alloy containing the same. The ceramic material is preferably alumina, SiC, boron nitride or aluminum nitride, and other materials such as graphite carbon can also be used.
在圖3中是顯示使複數片的反射板48分別離開一間隔之所謂的反射器24，作為取代圖1、圖2所示的 隔熱手段43者。此反射板48在700℃以下可使用不鏽鋼材或鈦材。在以上的溫度帶域可使用Au，Cu，Mo，Ta，W等的金屬材料及其合金、碳、氧化鋁、SiC、BN、AlN等的陶瓷材。只要可保持反射傳播熱輻射的紅外線等的電磁波的機能即可。因此，為了使紅外線光帶的反射率提升，將反射板48的表面鏡面加工為理想，且亦可電鍍Ag，Au，Cu，Al等的金屬。 In Fig. 3, a so-called reflector 24 for separating the reflecting plates 48 of a plurality of sheets from each other is shown, instead of the one shown in Figs. Insulation means 43. The reflector 48 may be made of stainless steel or titanium at 700 ° C or lower. In the above temperature band, a metal material such as Au, Cu, Mo, Ta, or W, or an alloy thereof, or a ceramic material such as carbon, alumina, SiC, BN, or AlN can be used. It suffices that the function of electromagnetic waves such as infrared rays that radiate heat radiation can be maintained. Therefore, in order to increase the reflectance of the infrared light band, the surface of the reflecting plate 48 is mirror-finished, and a metal such as Ag, Au, Cu, or Al may be plated.
亦可取代反射器24，至少鋪上1片以上熱傳導小耐熱溫度高的陶瓷板或以陶瓷的纖維所製作的薄板。在使用陶瓷板時，亦可考慮真空排氣，使用氣孔率小者。並且，即使併用圖3所示的反射器24與隔熱材等也無妨。 Instead of the reflector 24, at least one or more ceramic plates having a small heat conduction and high heat resistance temperature or a thin plate made of ceramic fibers may be placed. When using a ceramic plate, vacuum evacuation may also be considered, and a porosity is small. Further, even if the reflector 24 and the heat insulating material shown in Fig. 3 are used in combination, it may be used.
圖3(B)是表示加熱器23的形狀。 FIG. 3(B) shows the shape of the heater 23.
在圖3(B)中，(1)所示的加熱器23a是形成一體者，(2)所示的加熱器23b是2分割者。該等的加熱器的使用是配合外殼27的大小或基板5的大小來選擇使用。 In Fig. 3(B), the heater 23a shown in (1) is formed integrally, and the heater 23b shown in (2) is a two-part. The use of such heaters is selected to match the size of the outer casing 27 or the size of the substrate 5.
在此利用圖4來簡單說明有機EL裝置製造的生產線構成。 Here, the production line configuration of the organic EL device manufacturing will be briefly described using FIG.
圖4是本發明的實施例的有機EL裝置製造裝置的概略構成圖。 4 is a schematic configuration diagram of an apparatus for manufacturing an organic EL device according to an embodiment of the present invention.
在圖4中，本發明的有機EL裝置製造裝置100是構成可在同一真空蒸鍍腔室16進行對準及蒸鍍。有機EL裝置製造裝置100是成為在中心部具有真空搬送 機械手臂9的多角形的真空搬送室7、及在其周邊部放射狀地配置基板儲料室8或成膜室的真空蒸鍍腔室16之群組型的有機EL裝置製造裝置100的構成。各真空蒸鍍腔室16是具有保持基板10的基板保持部13及遮罩12。並且，在真空蒸鍍腔室16及基板儲料室8與真空搬送室7之間設有隔離彼此的真空之閘閥14。蒸發源11是使用圖1或圖3所示的蒸發源4。 In FIG. 4, the organic EL device manufacturing apparatus 100 of the present invention is configured to perform alignment and vapor deposition in the same vacuum vapor deposition chamber 16. The organic EL device manufacturing apparatus 100 has a vacuum transfer at the center. The configuration of the group-type organic EL device manufacturing apparatus 100 of the polygonal vacuum transfer chamber 7 of the robot arm 9 and the vacuum vapor deposition chamber 16 in which the substrate storage chamber 8 or the film formation chamber are radially arranged in the peripheral portion thereof . Each of the vacuum deposition chambers 16 is a substrate holding portion 13 having a holding substrate 10 and a mask 12. Further, a vacuum gate valve 14 that isolates each other is provided between the vacuum evaporation chamber 16 and the substrate storage chamber 8 and the vacuum transfer chamber 7. The evaporation source 11 is the evaporation source 4 shown in Fig. 1 or Fig. 3.
藉由如此的構成，真空搬送機械手臂9從基板儲料室8取出基板10，搬入至真空蒸鍍腔室16的基板保持部13。然後，在真空蒸鍍腔室16，使被搬入的基板10以基板旋回手段(未圖示)來正對於遮罩12，進行對準(基板與遮罩的對位)，使蒸發源11上下對基板10蒸鍍。蒸鍍後，使基板10回到水平狀態。然後，藉由真空搬送機械手臂9來從真空蒸鍍腔室16搬出基板10，搬入至其他的真空蒸鍍腔室16或回到基板儲料室8。 With such a configuration, the vacuum transfer robot arm 9 takes out the substrate 10 from the substrate storage chamber 8 and carries it into the substrate holding portion 13 of the vacuum deposition chamber 16. Then, in the vacuum deposition chamber 16, the substrate 10 to be loaded is aligned with the mask 12 by means of a substrate rotation means (not shown) (alignment of the substrate and the mask), and the evaporation source 11 is moved up and down. The substrate 10 is evaporated. After vapor deposition, the substrate 10 is returned to the horizontal state. Then, the substrate 10 is carried out from the vacuum deposition chamber 16 by the vacuum transfer robot arm 9, and carried into the other vacuum vapor deposition chamber 16 or returned to the substrate storage chamber 8.
在如此的處理的基板10的搬出入中，以不會影響各真空蒸鍍腔室16的處理之方式控制關聯的閘閥14。 In the carry-in and out of the substrate 10 thus processed, the associated gate valve 14 is controlled so as not to affect the processing of each vacuum vapor deposition chamber 16.
如以上般，本實施例是在坩堝22及加熱手段44(加熱器23)的外部設置冷卻手段45，且設在以隔熱手段44(反射器24)所包圍的領域的內側。藉此，可使浮游的洩漏蒸氣集中地附著於冷卻手段45，因此可防止上述附著往多餘的地方。 As described above, in the present embodiment, the cooling means 45 is provided outside the crucible 22 and the heating means 44 (heater 23), and is provided inside the area surrounded by the heat insulating means 44 (reflector 24). Thereby, the floating leaking vapor can be concentratedly attached to the cooling means 45, so that the above-mentioned adhesion to the excess place can be prevented.
並且，對於冷卻手段45之來自加熱器23的 熱是藉由輻射熱隔熱手段46(反射器24)所遮斷，因此不會有冷卻手段45被加熱的情形。因此，可安定捕集洩漏蒸氣。 And, for the cooling means 45 from the heater 23 The heat is blocked by the radiant heat insulation means 46 (reflector 24), so that there is no case where the cooling means 45 is heated. Therefore, the trapped vapor can be stably collected.
在圖5顯示冷卻手段的詳細。 The details of the cooling means are shown in FIG.
圖5是表示本發明的其他實施例的蒸發源的冷卻手段的圖。 Fig. 5 is a view showing a cooling means of an evaporation source according to another embodiment of the present invention.
在圖5中，本實施例是將冷卻手段45例如設為不鏽鋼製的區塊28，使冷卻劑52(使用油或水等作為冷卻媒體)從反射器24的外部循環的構造者。 In the present embodiment, the cooling means 45 is, for example, a block 28 made of stainless steel, and the coolant 52 (using oil or water as a cooling medium) is circulated from the outside of the reflector 24.
亦即，設置貫通腔室2及外殼27的2條的冷卻劑流通孔52a，且以2條的冷卻劑流通孔52a能夠在冷卻區塊28合流的方式設置U形轉彎部52b。冷卻劑流通孔52a是分別以能夠成為連續的流通孔之方式用配管51連接。 In other words, two coolant passage holes 52a penetrating the chamber 2 and the outer casing 27 are provided, and the U-turn portion 52b is provided so that the two coolant passage holes 52a can merge in the cooling block 28. The coolant passage holes 52a are connected by a pipe 51 so as to be continuous flow holes.
另外，在本實施例是以貫通腔室2、外殼27、冷卻區塊28的冷卻劑流通孔52a所構成，但並非限於此構成，當然以U字狀的配管所構成也可取得相同的效果。 Further, in the present embodiment, the coolant passage hole 52a is formed in the chamber 2, the outer casing 27, and the cooling block 28. However, the present invention is not limited to this configuration. Of course, the same effect can be obtained by forming a U-shaped pipe. .
如以上般，若根據本實施例，則藉由使冷卻劑52循環於冷卻區塊28，冷卻區塊28可經常保持低溫狀態，因此可提高洩漏蒸氣的捕集效果。 As described above, according to the present embodiment, by circulating the coolant 52 to the cooling block 28, the cooling block 28 can be kept at a low temperature state, so that the trapping effect of the leaking vapor can be improved.
圖6是表示本發明的其他實施例的蒸發源的冷卻手段的圖。 Fig. 6 is a view showing a cooling means of an evaporation source according to another embodiment of the present invention.
在圖6中，實施例2是使冷卻媒體循環於冷卻區塊28的構成，但本實施例是在反射器24鑿孔，使與外部的外殼27連接或一體化。並且，在與外殼27連接或形成一體構造時，亦可只水冷外殼側。 In Fig. 6, the second embodiment is a configuration in which the cooling medium is circulated to the cooling block 28. However, in the present embodiment, the reflector 24 is bored to connect or integrate with the outer casing 27. Further, when it is connected to the outer casing 27 or forms an integral structure, it is also possible to only water-cool the outer casing side.
亦即，若就那樣使用冷卻區塊28，則會吸收坩堝22或加熱手段44(加熱器23)的熱輻射，使蒸發源內的溫度顯著降低，妨礙蒸鍍。因此，如圖5或圖6所示般，在冷卻區塊28內，與加熱手段44或坩堝22對峙的面設置輻射熱遮斷手段46。此輻射熱遮斷手段46是反射器24或隔熱材等皆可。 That is, if the cooling block 28 is used as it is, the heat radiation of the crucible 22 or the heating means 44 (heater 23) is absorbed, and the temperature in the evaporation source is remarkably lowered to impede vapor deposition. Therefore, as shown in FIG. 5 or FIG. 6, in the cooling block 28, a radiant heat blocking means 46 is provided on the surface facing the heating means 44 or the crucible 22. This radiant heat blocking means 46 may be a reflector 24 or a heat insulating material or the like.
最好冷卻區塊28的溫度是設定成比蒸發源4之反射器24的內側的構件哪個皆低的溫度。並且，設定成比蒸鍍材料21的蒸發溫度更充分低的溫度，例如蒸鍍材料21為溶融系材料時是融點附近，昇華系材料時是昇華開始溫度以下為理想。藉此，從噴嘴附近侵入蒸發源4中而來的蒸鍍材料21的粒子，不是蒸發源4的構成構件例如熱電偶或反射器24，而是可使集中於冷卻區塊28來析出。 Preferably, the temperature of the cooling block 28 is set to a temperature lower than which of the members of the inside of the reflector 24 of the evaporation source 4. Further, the temperature is set to be sufficiently lower than the evaporation temperature of the vapor deposition material 21. For example, when the vapor deposition material 21 is a molten material, it is in the vicinity of the melting point, and in the case of the sublimation material, it is preferably a sublimation starting temperature or lower. Thereby, the particles of the vapor deposition material 21 that have entered the evaporation source 4 from the vicinity of the nozzle are not constituent members of the evaporation source 4 such as the thermocouple or the reflector 24, but may be concentrated in the cooling block 28 to be deposited.
並且，如圖5或圖6所示般，亦可在冷卻區塊28安裝防著板29。最好防著板29是與冷卻區塊28接觸，以熱傳導性佳的材料來製作。並且，防著板29的外 側的面是以噴沙等來使具有凹凸，使附著的蒸鍍材料不會脫落為佳。並且，使防著板29可容易裝卸，藉此可容易進行維修。 Further, as shown in FIG. 5 or FIG. 6, the retaining plate 29 may be attached to the cooling block 28. Preferably, the anti-plate 29 is in contact with the cooling block 28 and is made of a material having good thermal conductivity. And, outside the anti-plate 29 The side surface is made to have irregularities by sandblasting or the like, and it is preferable that the deposited vapor deposition material does not fall off. Further, the anti-sliding plate 29 can be easily attached and detached, whereby maintenance can be easily performed.
實施例2是將冷卻劑流通孔52a的U形轉彎部52b設在冷卻區塊28，但本實施例是設在外殼27。藉此，冷卻區塊28是經由外殼27來間接性地冷卻，因此冷卻劑流通孔52a的加工比較簡單，可謀求低成本化。 In the second embodiment, the U-turn portion 52b of the coolant passage hole 52a is provided in the cooling block 28, but the present embodiment is provided in the outer casing 27. Thereby, since the cooling block 28 is indirectly cooled by the outer casing 27, the processing of the coolant flow hole 52a is relatively simple, and the cost can be reduced.
另外，如上述般，在本實施例中也是以貫通腔室2、外殼27的冷卻劑流通孔52a所構成，但並非限於此構成，當然以U字狀的配管所構成也可取得相同的效果。 In the present embodiment, the coolant passage hole 52a of the outer casing 27 is also formed in the present embodiment. However, the present invention is not limited to this configuration. Of course, the same effect can be obtained by forming a U-shaped pipe. .
如以上般，若根據本發明，則設成以隔熱手段來覆蓋冷卻手段，可藉由冷卻手段來局部地作出比蒸鍍材料所蒸發的溫度更充分低的溫度或蒸鍍材料的融點以下的部分，藉此將進入坩堝．加熱手段與隔熱手段之間的蒸鍍材料粒子集中於冷卻手段45而析出。 As described above, according to the present invention, the cooling means is covered by the heat insulating means, and the temperature which is sufficiently lower than the temperature evaporated by the vapor deposition material or the melting point of the vapor deposition material can be locally made by the cooling means. The following sections will be used to enter the 坩埚. The vapor deposition material particles between the heating means and the heat insulating means are concentrated on the cooling means 45 and are deposited.
並且，藉由冷卻手段在面對加熱手段或坩堝的部分設置隔熱手段，可抑制蒸鍍製程的影響。 Further, by providing a heat insulating means in a portion facing the heating means or the crucible by the cooling means, the influence of the vapor deposition process can be suppressed.
而且，使往加熱手段(加熱器)的端子、熱電偶、坩堝或支撐加熱手段的構造體之蒸鍍材料的附著形成最小限度，可抑制以往對於該等的構件之蒸鍍材料的析出所引發的膜質劣化或對於連續運轉或維修的阻礙。 Further, the adhesion of the vapor deposition material to the terminal of the heating means (heater), the thermocouple, the crucible, or the structure supporting the heating means is minimized, and the precipitation of the vapor deposition material of the member can be suppressed. Deterioration of the membrane or impediment to continuous operation or maintenance.
並且，可在冷卻手段的蒸鍍材料所析出的部分卸下，安裝以熱傳導性佳的材質所製作的防著板，藉此 可簡單地進行維修，維持性能。 Further, it is possible to remove the portion where the vapor deposition material of the cooling means is deposited, and to mount the anti-slip plate made of a material having good thermal conductivity. It can be easily repaired to maintain performance.
1‧‧‧真空蒸鍍裝置 1‧‧‧Vacuum evaporation device
2‧‧‧腔室 2‧‧‧ chamber
3‧‧‧真空泵 3‧‧‧vacuum pump
4‧‧‧蒸發源 4‧‧‧ evaporation source
5‧‧‧基板 5‧‧‧Substrate
6‧‧‧閘閥 6‧‧‧ gate valve
21‧‧‧蒸發材料 21‧‧‧Evaporation materials
22‧‧‧坩堝 22‧‧‧坩埚
25‧‧‧熱電偶 25‧‧‧ thermocouple
26‧‧‧速率感測器 26‧‧‧ rate sensor
27‧‧‧外殼 27‧‧‧Shell
34‧‧‧噴嘴 34‧‧‧Nozzles
43‧‧‧隔熱手段 43‧‧‧Insulation means
44‧‧‧加熱手段(加熱器23) 44‧‧‧heating means (heater 23)
45‧‧‧冷卻手段(浮游蒸鍍物回收手段) 45‧‧‧Cooling means (recovery of floating vapor deposition)
46‧‧‧熱輻射隔熱手段 46‧‧‧ Thermal radiation insulation
50‧‧‧端子 50‧‧‧terminal
Claims (20)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012079803A JP2013211138A (en) | 2012-03-30 | 2012-03-30 | Evaporation source and vacuum deposition device using the same |
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| Publication Number | Publication Date |
|---|---|
| TW201339336A true TW201339336A (en) | 2013-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW102105598A TW201339336A (en) | 2012-03-30 | 2013-02-18 | Evaporation source and vacuum evaporation apparatus using the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2013211138A (en) |
| KR (1) | KR20130111272A (en) |
| CN (1) | CN103361610A (en) |
| TW (1) | TW201339336A (en) |
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| TWI560294B (en) * | 2015-12-09 | 2016-12-01 | Au Optronics Corp | Evaporation apparatus and evaporation method |
| TWI624554B (en) * | 2015-08-21 | 2018-05-21 | 弗里松股份有限公司 | Evaporation source |
| TWI661067B (en) * | 2013-10-24 | 2019-06-01 | 日立造船股份有限公司 | Manifold for vacuum evaporation device |
| US10982319B2 (en) | 2015-08-21 | 2021-04-20 | Flisom Ag | Homogeneous linear evaporation source |
| TWI781929B (en) * | 2016-04-25 | 2022-11-01 | 美商創新先進材料股份有限公司 | Effusion cells, deposition systems including effusion cells, and related methods |
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| JP2014072005A (en) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | Evaporation source, vacuum deposition device and method of manufacturing organic el display device |
| CN104213080B (en) * | 2014-08-20 | 2016-08-24 | 京东方科技集团股份有限公司 | Evaporation source and evaporated device |
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| CN112376018A (en) * | 2020-10-29 | 2021-02-19 | 云谷（固安）科技有限公司 | Evaporation source device and evaporation equipment |
| CN113088892B (en) * | 2021-03-31 | 2023-02-28 | 京东方科技集团股份有限公司 | Vapor deposition source and vapor deposition device |
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-
2012
- 2012-03-30 JP JP2012079803A patent/JP2013211138A/en active Pending
-
2013
- 2013-02-13 KR KR1020130015305A patent/KR20130111272A/en not_active Application Discontinuation
- 2013-02-18 TW TW102105598A patent/TW201339336A/en unknown
- 2013-02-19 CN CN2013100535083A patent/CN103361610A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI661067B (en) * | 2013-10-24 | 2019-06-01 | 日立造船股份有限公司 | Manifold for vacuum evaporation device |
| TWI624554B (en) * | 2015-08-21 | 2018-05-21 | 弗里松股份有限公司 | Evaporation source |
| US10676812B2 (en) | 2015-08-21 | 2020-06-09 | Flisom Ag | Evaporation source |
| US10982319B2 (en) | 2015-08-21 | 2021-04-20 | Flisom Ag | Homogeneous linear evaporation source |
| TWI560294B (en) * | 2015-12-09 | 2016-12-01 | Au Optronics Corp | Evaporation apparatus and evaporation method |
| TWI781929B (en) * | 2016-04-25 | 2022-11-01 | 美商創新先進材料股份有限公司 | Effusion cells, deposition systems including effusion cells, and related methods |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103361610A (en) | 2013-10-23 |
| JP2013211138A (en) | 2013-10-10 |
| KR20130111272A (en) | 2013-10-10 |
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