TW201327926A - Light conversion structure and the light emitting device packaging structure using the same - Google Patents
Light conversion structure and the light emitting device packaging structure using the same Download PDFInfo
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Abstract
Description
本提案是關於一種發光二極體的封裝結構，特別是一種具有至少一微結構的光轉換結構和其應用之發光二極體的封裝結構。The present invention relates to a package structure of a light-emitting diode, in particular to a light-converting structure having at least one microstructure and a package structure of the light-emitting diode of the same.
隨著白光發光二極體(LED,Light Emitting Diode)的發光效率的提昇，白光LED已成為倍受重視的新世代光源。With the improvement of the luminous efficiency of white light emitting diodes (LEDs), white LEDs have become a new generation of light sources that have received much attention.
目前的白光LED大都由藍色晶片激發螢光粉體形成白光，而轉換成白光之後的光學品質優劣由光源的亮度、演色性、以及光源配光來評斷，而光源的演色性由螢光粉體混煉的方法決定，大多是將多種波長螢光粉體混煉在一起藉此增加演色性，但由於多種螢光粉體混煉在一起容易造成激發光相互吸收問題，導致發光效率不佳的問題。Most of the current white LEDs use blue wafers to excite the phosphor powder to form white light, and the optical quality after conversion to white light is judged by the brightness, color rendering, and light source of the light source, and the color rendering of the light source is made of phosphor powder. The method of body mixing determines that most of the phosphor powders of various wavelengths are mixed together to increase the color rendering property. However, due to the mixing of a plurality of phosphor powders, the mutual absorption of the excitation light is easily caused, resulting in poor luminous efficiency. The problem.
再者，若由發光晶片所發射出來的光再入射到其他材料(如螢光粉層)時，因材料與環境介質間之折射係數差異，會造成入射至其他材料的光線在特定入射角下遭到全反射。這將使得LED之光萃取效率降低。Furthermore, if the light emitted by the illuminating wafer is incident on other materials (such as the phosphor layer), the difference in the refractive index between the material and the environmental medium causes the light incident on other materials to be at a specific incident angle. Fully reflected. This will reduce the light extraction efficiency of the LED.
鑒於以上的問題，本提案在於提供一種具有一堆疊結構之光轉換結構和發光二極體的封裝結構，藉以解決習知技術中由於多種螢光粉體混煉在一起容易造成激發光相互吸收，導致發光效率不佳的問題。In view of the above problems, the present invention provides a package structure having a light-converting structure and a light-emitting diode of a stacked structure, so as to solve the problem that the excitation light is mutually absorbed due to mixing of a plurality of phosphor powders in the prior art. The problem of poor luminous efficiency.
本提案所揭露之光轉換結構，其包含第一微結構層和一堆疊結構。第一微結構層包含一第一平坦面和一第一粗糙面。一光線由第一粗糙面入射至第一微結構層，形成複數個散射光，並由第一平坦面射出。堆疊結構由複數個螢光粉層堆疊形成，且設置於第一微結構層的第一平坦面上，以吸收由第一微結構層的第一平坦面射出的散射光，並激發出複數個激發光。The light conversion structure disclosed in the proposal includes a first microstructure layer and a stack structure. The first microstructure layer includes a first flat surface and a first rough surface. A light is incident from the first rough surface to the first microstructure layer to form a plurality of scattered light and is emitted by the first flat surface. The stacked structure is formed by stacking a plurality of phosphor layers, and is disposed on the first flat surface of the first microstructure layer to absorb the scattered light emitted by the first flat surface of the first microstructure layer, and exciting a plurality of Excitation light.
在一實施例中，本提案所揭露之發光二極體的封裝結構，包含一用以發出一光線的發光晶片和一的光轉換結構。光轉換結構包含一第一微結構層和堆疊結構。第一微結構層包含一第一平坦面和一第一粗糙面，光線由第一微結構層的第一粗糙面入射而形成複數個第一散射光，並由第一微結構層的第一平坦面射出。In one embodiment, the package structure of the light-emitting diode disclosed in the present proposal comprises a light-emitting chip for emitting a light and a light-converting structure. The light conversion structure includes a first microstructure layer and a stacked structure. The first microstructure layer includes a first flat surface and a first rough surface, and the light is incident from the first rough surface of the first microstructure layer to form a plurality of first scattered light, and is first by the first microstructure layer The flat surface is shot.
堆疊結構由複數個螢光粉層堆疊形成且設置於第一微結構層的第一平坦面上，以吸收由第一微結構層的第一平坦面射出的每一個散射光，並激發出複數個激發光。The stacked structure is formed by stacking a plurality of phosphor layers and disposed on the first flat surface of the first microstructure layer to absorb each of the scattered light emitted by the first flat surface of the first microstructure layer and exciting the plurality of An excitation light.
如此一來，光轉換結構便可降低光線入射至堆疊結構時所產生的反射情形，使得光的萃取率以及出光率可以大幅提升。In this way, the light conversion structure can reduce the reflection situation when light is incident on the stacked structure, so that the extraction rate and the light extraction rate of the light can be greatly improved.
有關本提案的特徵、實作與功效，茲配合圖式作最佳實施例詳細說明如下。The features, implementation and efficacy of this proposal are described in detail below with reference to the preferred embodiment of the drawings.
請參照『第1A圖』，其係為根據本提案一實施例之光轉換結構的剖面示意圖。本實施例之光轉換結構M1包含一第一微結構層10、複數個螢光粉層(如螢光粉層11至13所示，但不為本提案之限制)。螢光粉層11至13堆疊形成一堆疊結構。第一微結構層10包含一第一平坦面102和一第一粗糙面101。堆疊結構設置於第一微結構層10的第一平坦面102上。Please refer to FIG. 1A, which is a schematic cross-sectional view of a light conversion structure according to an embodiment of the present proposal. The light conversion structure M1 of the present embodiment comprises a first microstructure layer 10 and a plurality of phosphor layers (such as the phosphor layers 11 to 13 but not limited by the proposal). The phosphor layers 11 to 13 are stacked to form a stacked structure. The first microstructure layer 10 includes a first flat surface 102 and a first rough surface 101. The stacked structure is disposed on the first flat surface 102 of the first microstructure layer 10.
當光線由第一微結構層10的第一粗糙面101入射至第一微結構層10中時，由於光轉換結構M1內的折射率與光轉換結構M1外的折射率不同，且第一粗糙面101會使光線的入射角度改變，因此光線入射至第一微結構10層後形成複數個第一散射光。這些第一散射光由第一微結構層10的第一平坦面102射出。When light is incident into the first microstructured layer 10 from the first rough surface 101 of the first microstructure layer 10, since the refractive index in the light conversion structure M1 is different from the refractive index outside the light conversion structure M1, and the first roughness The face 101 changes the incident angle of the light, so that the light is incident on the first microstructure 10 layer to form a plurality of first scattered lights. These first scattered light are emitted by the first flat surface 102 of the first microstructure layer 10.
螢光粉層11設置於第一微結構層10的第一平坦面102上。螢光粉層11中的螢光粉體11a吸收來自第一散射光的一第一光譜，而產生具有一第二光譜的複數個激發光。這些激發光將直接或間接入射至螢光粉層12中。The phosphor layer 11 is disposed on the first flat surface 102 of the first microstructure layer 10. The phosphor powder 11a in the phosphor layer 11 absorbs a first spectrum from the first scattered light to generate a plurality of excitation lights having a second spectrum. These excitation light will be incident directly or indirectly into the phosphor layer 12.
螢光粉層12設置於螢光粉層11上。螢光粉層12中的螢光粉體12a吸收來自螢光粉層11之具有第二光譜的激發光而產生複數個具有一第三光譜的激發光，然後直接或間接地入射至螢光粉層13中。The phosphor layer 12 is disposed on the phosphor layer 11. The phosphor powder 12a in the phosphor layer 12 absorbs the excitation light having the second spectrum from the phosphor layer 11 to generate a plurality of excitation lights having a third spectrum, and then directly or indirectly incident on the phosphor powder. In layer 13.
螢光粉層13設置於螢光粉層12上。螢光粉層13中的螢光粉體13a吸收來自螢光粉層12之具有第三光譜的激發光而產生複數個具有一第四光譜的激發光，然後直接或間接地由螢光粉層13之一表面131射出。The phosphor layer 13 is disposed on the phosphor layer 12. The phosphor powder 13a in the phosphor layer 13 absorbs the excitation light having the third spectrum from the phosphor layer 12 to generate a plurality of excitation lights having a fourth spectrum, and then directly or indirectly from the phosphor layer. One of the surfaces 131 is emitted.
由於本實施例之光轉換結構M1設置有第一微結構層10，使得入射至堆疊結構的光可將大幅提升，並可降低光線的全反射的問題，使得光轉換結構M1的出光率提升。Since the light conversion structure M1 of the present embodiment is provided with the first microstructure layer 10, the light incident on the stacked structure can be greatly improved, and the problem of total reflection of light can be reduced, so that the light extraction rate of the light conversion structure M1 is improved.
基於上述之實施例，本提案再提供一實施例，請參照『第1B圖』所示，其係為根據本提案一實施例之光轉換結構的剖面示意圖。根據本實施例所提供之光轉換結構M2，其較『第1A圖』之光轉換結構M1多設置了一第二微結構層14。此第二微結構層14包含一第二平坦面142和一第二粗糙面141。第二平坦面142設置於螢光粉層13之一表面131上。Based on the above embodiments, another embodiment of the present invention is provided. Please refer to FIG. 1B, which is a cross-sectional view of a light conversion structure according to an embodiment of the present proposal. According to the light conversion structure M2 provided in this embodiment, a second microstructure layer 14 is disposed more than the light conversion structure M1 of FIG. 1A. The second microstructure layer 14 includes a second flat surface 142 and a second rough surface 141. The second flat surface 142 is disposed on one surface 131 of the phosphor layer 13.
當『第1A圖』、『第1B圖』中由螢光粉層13射出的激發光由第二微結構層14之第二平坦面142入射至第二微結構層14中時，由於光轉換結構M2內的折射率與光轉換結構M2外的折射率不同，且第二粗糙面141會使光線的入射角度改變，因此這些光線入射至第二微結構14層後將產生光線散射，而形成複數個具有第四光譜的第二散射光，並由第二微結構層14之第二粗糙面141射出。When the excitation light emitted from the phosphor layer 13 in the "1A" and "1B" is incident on the second microstructure layer 14 by the second flat surface 142 of the second microstructure layer 14, the light is converted. The refractive index in the structure M2 is different from the refractive index outside the light conversion structure M2, and the second rough surface 141 changes the incident angle of the light, so that when the light is incident on the second microstructure 14 layer, light is scattered and formed. A plurality of second scattered lights having a fourth spectrum are emitted from the second rough surface 141 of the second microstructure layer 14.
如此一來，此實施例之光轉換結構M2不僅使得入射至堆疊結構的光可將大幅提升，降低光線的反射，更因著第二微結構層14的設置，而提升了光轉換結構M2的出光率。In this way, the light conversion structure M2 of this embodiment not only greatly enhances the light incident on the stacked structure, but also reduces the reflection of the light, and further enhances the light conversion structure M2 due to the arrangement of the second microstructure layer 14. Light output rate.
本提案所提供之光轉換結構M1和M2可以不同的方式實施在發光二極體的封裝結構中。The light conversion structures M1 and M2 provided by the present proposal can be implemented in different ways in the package structure of the light emitting diode.
為了更近一步闡述光轉換結構M1實施於發光二極體的封裝結構中的情形，請同時參照『第1A圖』和『第2A圖』，『第2A圖』係為根據本提案一實施例之發光二極體封裝結構的剖面示意圖。發光二極體的封裝結構包含一發光晶片21、一封裝體22和一光轉換結構M1。In order to further explain the case where the light conversion structure M1 is implemented in the package structure of the light-emitting diode, please refer to "1A" and "2A" at the same time, and "2A" is an embodiment according to the present proposal. A schematic cross-sectional view of a light emitting diode package structure. The package structure of the light emitting diode comprises a light emitting chip 21, a package body 22 and a light conversion structure M1.
封裝體22設置於發光晶片21和光轉換結構M1之間並覆蓋於發光晶片21。而光轉換結構M1與發光晶片21之間的距離D1大於光轉換結構M1中之第一微結構10的一厚度值。The package body 22 is disposed between the light-emitting chip 21 and the light conversion structure M1 and covers the light-emitting chip 21. The distance D1 between the light conversion structure M1 and the light-emitting chip 21 is greater than a thickness value of the first microstructure 10 in the light conversion structure M1.
在一實施例中，光轉換結構M1可製作成一薄膜貼片，設置於封裝體22的表面上。(薄膜貼片只是本案的實施方法之一，並非本案結構之製作方法的限制)In one embodiment, the light conversion structure M1 can be fabricated as a film patch disposed on the surface of the package 22. (The film patch is only one of the implementation methods of this case, not the limitation of the manufacturing method of the case)
本提案再提供一使用『第1A圖』的光轉換結構M1的發光二極體之封裝結構的實施樣態。請同時參照『第1A圖』和『第3A圖』，『第3A圖』係為根據本提案一實施例之發光二極體封裝結構的剖面示意圖。發光二極體的封裝結構包含一發光晶片31、一黏著層32、一封裝體33和一光轉換結構M1。This proposal further provides an implementation form of a package structure of a light-emitting diode using the light conversion structure M1 of "FIG. 1A". Please refer to FIG. 1A and FIG. 3A simultaneously. FIG. 3A is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the present proposal. The package structure of the light emitting diode comprises a light emitting chip 31, an adhesive layer 32, a package body 33 and a light conversion structure M1.
黏著層32設置於發光晶片31和光轉換結構M1之間並覆蓋於發光晶片31。且光轉換結構M1與發光晶片31之間具有一距離D2(厚度)。而封裝體33則包覆光轉換結構M1之外部。The adhesive layer 32 is disposed between the light emitting wafer 31 and the light conversion structure M1 and covers the light emitting wafer 31. Further, the light conversion structure M1 and the light-emitting chip 31 have a distance D2 (thickness). The package body 33 covers the outside of the light conversion structure M1.
在一實施例中，光轉換結構M1可製作成一薄膜貼片，透過黏著層32，設置在發光晶片31的表面上。In one embodiment, the light conversion structure M1 can be formed as a film patch that is disposed on the surface of the light emitting wafer 31 through the adhesive layer 32.
為了更近一步闡述光轉換結構M2實施於發光二極體的封裝結構中的情形，請同時參照『第1B圖』和『第2B圖』，『第2B圖』係為根據本提案一實施例之發光二極體封裝結構的剖面示意圖。發光二極體的封裝結構包含一發光晶片21、一封裝體22和一光轉換結構M2。In order to further explain the case where the light conversion structure M2 is implemented in the package structure of the light-emitting diode, please refer to "1B" and "2B" at the same time, and "2B" is an embodiment according to the present proposal. A schematic cross-sectional view of a light emitting diode package structure. The package structure of the light emitting diode comprises a light emitting chip 21, a package body 22 and a light conversion structure M2.
封裝體22設置於發光晶片21和光轉換結構M2的第一粗糙面101之間並覆蓋於發光晶片21。而光轉換結構M2與發光晶片21之間的距離D1大於光轉換結構M2中之第一微結構10的一厚度值。具有第四光譜的第二散射光將由第二粗糙面141射出。The package body 22 is disposed between the light-emitting chip 21 and the first rough surface 101 of the light conversion structure M2 and covers the light-emitting chip 21. The distance D1 between the light conversion structure M2 and the light-emitting chip 21 is greater than a thickness value of the first microstructure 10 in the light conversion structure M2. The second scattered light having the fourth spectrum will be emitted by the second rough surface 141.
在一實施例中，光轉換結構M2可製作成一薄膜貼片，設置於封裝體22的表面上。In one embodiment, the light conversion structure M2 can be fabricated as a film patch disposed on the surface of the package 22.
本提案再提供一使用『第1B圖』的光轉換結構M2的發光二極體之封裝結構的實施樣態。請同時參照『第1B圖』和『第3B圖』，『第3B圖』係為根據本提案一實施例之發光二極體封裝結構的剖面示意圖。發光二極體的封裝結構包含一發光晶片31、一黏著層32、一封裝體33和一光轉換結構M2。This proposal further provides an implementation form of a package structure of a light-emitting diode using the light conversion structure M2 of "FIG. 1B". Please refer to FIG. 1B and FIG. 3B simultaneously, and FIG. 3B is a schematic cross-sectional view of the light emitting diode package structure according to an embodiment of the present proposal. The package structure of the light emitting diode comprises a light emitting chip 31, an adhesive layer 32, a package body 33 and a light conversion structure M2.
黏著層32設置於發光晶片31之一表面311和光轉換結構M2之第一粗糙面101之間並覆蓋於發光晶片31。而光轉換結構M2與發光晶片31之間具有一距離D2的一厚度值。而封裝體33則包覆光轉換結構M2之第二粗糙面141的外部。The adhesive layer 32 is disposed between the surface 311 of one of the light-emitting wafers 31 and the first rough surface 101 of the light conversion structure M2 and covers the light-emitting wafer 31. The light conversion structure M2 and the light emitting wafer 31 have a thickness value of a distance D2. The package body 33 covers the outside of the second rough surface 141 of the light conversion structure M2.
在一實施例中，光轉換結構M2可製作成一薄膜貼片，透過黏著層32，設置於發光晶片31的表面上。In one embodiment, the light conversion structure M2 can be fabricated as a film patch that is disposed on the surface of the light emitting wafer 31 through the adhesive layer 32.
上述之各個實施例之第一微結構層和第二微結構層係為透明層，且可根據使用者的需要設計為具有規則排列或非規則排列的微結構。The first microstructure layer and the second microstructure layer of each of the above embodiments are transparent layers, and can be designed as regular or irregularly arranged microstructures according to the needs of the user.
上述之各個實施例之堆疊結構的實施方式可參照中華民國公開專利第201123548號所述的方式實施，然而此實施方式不為本案之技術特徵的限制。The embodiment of the stacked structure of the above embodiments can be implemented in the manner described in the Republic of China Patent Publication No. 201123548, however, this embodiment is not limited to the technical features of the present invention.
此外，上述之各個實施例之發光晶片的實施方式亦可在發光晶片的表面上進行粗糙化的設計，然而，此實施方式不為本案之技術特徵的限制。In addition, the embodiments of the above-described embodiments of the light-emitting wafer can also be roughened on the surface of the light-emitting wafer. However, this embodiment is not limited by the technical features of the present invention.
如此一來，光轉換結構便可降低光線入射至堆疊結構時所產生的反射情形，使得光的萃取率以及出光率可以大幅提升。In this way, the light conversion structure can reduce the reflection situation when light is incident on the stacked structure, so that the extraction rate and the light extraction rate of the light can be greatly improved.
雖然本提案以前述之較佳實施例揭露如上，然其並非用以限定本提案，任何熟習相像技藝者，在不脫離本提案之精神和範圍內，當可作些許之更動與潤飾，因此本提案之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。While the present invention has been disclosed in the foregoing preferred embodiments, it is not intended to limit the present invention. Any skilled person skilled in the art can make some changes and refinements without departing from the spirit and scope of the present proposal. The scope of patent protection of the proposal shall be subject to the definition of the scope of the patent application attached to this specification.
10、23．．．第一微結構10, 23. . . First microstructure
11-13．．．螢光粉層11-13. . . Fluorescent powder layer
11a-13a．．．螢光粉體11a-13a. . . Fluorescent powder
14．．．第二微結構14. . . Second microstructure
101．．．第一粗糙面101. . . First rough surface
102．．．第一平坦面102. . . First flat surface
141．．．第二粗糙面141. . . Second rough surface
142．．．第二平坦面142. . . Second flat surface
131、311．．．表面131, 311. . . surface
21、31．．．發光晶片21, 31. . . Light emitting chip
22、33．．．封裝體22, 33. . . Package
32．．．黏著層32. . . Adhesive layer
D1、D2．．．距離D1, D2. . . distance
M1、M2．．．光轉換結構M1, M2. . . Light conversion structure
第1A圖係為根據本提案一實施例之光轉換結構的剖面示意圖。Fig. 1A is a schematic cross-sectional view showing a light conversion structure according to an embodiment of the present proposal.
第1B圖係為根據本提案一實施例之光轉換結構的剖面示意圖。Fig. 1B is a schematic cross-sectional view showing a light conversion structure according to an embodiment of the present proposal.
第2A圖係為根據本提案一實施例之發光二極體封裝結構的剖面示意圖。2A is a schematic cross-sectional view showing a light emitting diode package structure according to an embodiment of the present proposal.
第2B圖係為根據本提案一實施例之發光二極體封裝結構的剖面示意圖。2B is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the present proposal.
第3A圖係為根據本提案一實施例之發光二極體封裝結構的剖面示意圖。3A is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the present proposal.
第3B圖係為根據本提案一實施例之發光二極體封裝結構的剖面示意圖。FIG. 3B is a schematic cross-sectional view showing a light emitting diode package structure according to an embodiment of the present proposal.
21．．．發光晶片twenty one. . . Light emitting chip
22．．．封裝體twenty two. . . Package
101．．．第一粗糙面101. . . First rough surface
141．．．第二粗糙面141. . . Second rough surface
D1．．．距離D1. . . distance
M2．．．光轉換結構M2. . . Light conversion structure
Claims (13)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149918A TW201327926A (en) | 2011-12-30 | 2011-12-30 | Light conversion structure and the light emitting device packaging structure using the same |
| CN2012102275809A CN103187515A (en) | 2011-12-30 | 2012-07-02 | Light conversion structure and packaging structure of light emitting diode applying same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149918A TW201327926A (en) | 2011-12-30 | 2011-12-30 | Light conversion structure and the light emitting device packaging structure using the same |
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| TW201327926A true TW201327926A (en) | 2013-07-01 |
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| TW (1) | TW201327926A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI547738B (en) * | 2015-06-09 | 2016-09-01 | Quantum dot enhancement film, backlight module and display device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150129356A (en) * | 2014-05-12 | 2015-11-20 | 엘지이노텍 주식회사 | Lighting device |
| US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
| US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
| TWI557952B (en) | 2014-06-12 | 2016-11-11 | 新世紀光電股份有限公司 | Light emitting component |
| TW202249306A (en) | 2017-11-05 | 2022-12-16 | 新世紀光電股份有限公司 | Light emitting apparatus |
| CN108803147A (en) * | 2018-07-02 | 2018-11-13 | 京东方科技集团股份有限公司 | Backlight module and display device with it |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6734465B1 (en) * | 2001-11-19 | 2004-05-11 | Nanocrystals Technology Lp | Nanocrystalline based phosphors and photonic structures for solid state lighting |
| US7157745B2 (en) * | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
| CA2567611A1 (en) * | 2004-05-28 | 2005-12-08 | Tir Systems Ltd. | Luminance enhancement apparatus and method |
| KR100665219B1 (en) * | 2005-07-14 | 2007-01-09 | 삼성전기주식회사 | Wavelengt-converted light emitting diode package |
| EP2087563B1 (en) * | 2006-11-15 | 2014-09-24 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
| US7825427B2 (en) * | 2008-09-12 | 2010-11-02 | Bridgelux, Inc. | Method and apparatus for generating phosphor film with textured surface |
| JP5555318B2 (en) * | 2009-06-04 | 2014-07-23 | コーニンクレッカ フィリップス エヌ ヴェ | Highly efficient light emitting device and method of manufacturing such a device |
| CN102237477A (en) * | 2010-04-29 | 2011-11-09 | 财团法人工业技术研究院 | Multilayer stack-packaged light- emitting diode |
-
2011
- 2011-12-30 TW TW100149918A patent/TW201327926A/en unknown
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI547738B (en) * | 2015-06-09 | 2016-09-01 | Quantum dot enhancement film, backlight module and display device | |
| US10042108B2 (en) | 2015-06-09 | 2018-08-07 | Radiant Opto-Electronics (Suzhou) Co., Ltd. | Quantum dot enhancement film, backlight module and display device |
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| CN103187515A (en) | 2013-07-03 |
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