TW201327867A - Chemical bath deposition device and method thereof - Google Patents
Chemical bath deposition device and method thereof Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
Description
本發明係關於一種化學浴沈積設備及方法，特別是關於一種製造薄膜太陽能電池之化學浴沈積設備及方法。The present invention relates to a chemical bath deposition apparatus and method, and more particularly to a chemical bath deposition apparatus and method for fabricating a thin film solar cell.
在薄膜太陽能電池之製程中，形成例如CdS、ZnS、InS等所構成的緩衝層之方法，通常利用化學浴沈積(chemical bath deposition)法，因為化學浴沈積法可形成的薄且均勻之薄膜，而且製造成本較低。In the process of a thin film solar cell, a method of forming a buffer layer composed of, for example, CdS, ZnS, InS, or the like, usually by a chemical bath deposition method, because of a thin and uniform film which can be formed by a chemical bath deposition method, And the manufacturing cost is lower.
然而，在化學浴沈積時，例如CdS的成核過程(nucleation)包含(1)均質(homogeneous)成核以及(2)異質(heterogeneous)成核兩種，異質成核會在表面形成CdS，而均質成核在化學浴中形成CdS粒子，如果CdS粒子沈降於處理表面，會被包覆於薄膜內，可能造成元件的缺陷，因此通常化學浴沈積法利用攪拌或垂直放置處理基板的方式，盡量排除該均質成核所形成的粒子或其他雜質粒子。However, in chemical bath deposition, for example, the nucleation of CdS includes (1) homogeneous nucleation and (2) heterogeneous nucleation, and heterogeneous nucleation forms CdS on the surface. Homogeneous nucleation forms CdS particles in a chemical bath. If CdS particles settle on the treated surface, they will be coated in the film, which may cause defects in the components. Therefore, chemical bath deposition is usually carried out by stirring or vertically placing the substrate. Particles or other impurity particles formed by the homogeneous nucleation are excluded.
例如美國專利第7,704,863號，揭露利用化學浴沈積法形成ZnS薄膜，其係利用攪拌及垂直放置處理基板的方式進行化學浴沈積。另外，例如美國專利公開第2010/0087027號，揭露大量化學浴處理設備，用以形成薄膜太陽能電池之CdS薄膜，該文獻的圖6表示化學浴處理設備之示意圖，也是利用攪拌及垂直放置處理基板的方式進行，但是該文獻的圖6所示的設備，化合物會沈積於基板的兩面，為了只沈積於基板的單面，需要先保護不進行沈積處理的另一面，卻仍然有大量化學廢棄物的問題。For example, U.S. Patent No. 7,704,863 discloses the formation of a ZnS film by chemical bath deposition by chemical bath deposition by means of agitation and vertical placement of the substrate. Further, for example, U.S. Patent Publication No. 2010/0087027 discloses a large number of chemical bath processing apparatuses for forming a CdS film of a thin film solar cell, and Fig. 6 of the document shows a schematic view of a chemical bath processing apparatus, which is also a substrate treated by stirring and vertical placement. In the manner shown in Figure 6, the compound is deposited on both sides of the substrate. In order to deposit only on one side of the substrate, it is necessary to protect the other side without deposition, but still have a large amount of chemical waste. The problem.
此外，例如美國專利公開第2007/0020400號，揭露化學沈積設備及方法，利用微通道噴出混合的反應溶液以及旋轉基板的方式，形成CdS薄膜。Further, for example, U.S. Patent Publication No. 2007/0020400 discloses a chemical deposition apparatus and method for forming a CdS thin film by using a microchannel to eject a mixed reaction solution and rotating a substrate.
然而，上述化學浴沈積過程，在固體-液體的界面，即處理基板的表面，會產生氣泡，該些氣泡如果沒有即時地離開該處理基板的表面(即浮出表面，消失於大氣中)會構成薄膜的氣孔，而成為薄膜的缺陷。雖然攪拌可以產生溶液的擾動，對於位在處理基板的表面之大氣泡或許有些微作用，但對於微氣泡的效果不佳。However, in the above chemical bath deposition process, at the interface of the solid-liquid, that is, the surface of the processing substrate, bubbles are generated, and if they do not leave the surface of the processing substrate (ie, float out of the surface, disappear into the atmosphere), The pores constituting the film become defects of the film. Although agitation can cause disturbance of the solution, it may be slightly ineffective for large bubbles located on the surface of the substrate, but it is not effective for microbubbles.
鑒於上述之發明背景，為了符合產業上之要求，本發明之目的之一，在於提供一種製造薄膜太陽能電池之化學浴沈積設備及方法，藉由運動機構改變表面張力的方式，可有效地除去固體-液體的界面(即薄膜形成的表面)之氣泡，避免所形成的薄膜包含氣孔(pin hole)，且可避免該均質成核所形成的粒子或其他雜質粒子包裹或沈降於薄膜形成的表面，藉此可形成薄且均勻而無缺陷之薄膜。In view of the above-mentioned background of the invention, in order to meet the requirements of the industry, one of the objects of the present invention is to provide a chemical bath deposition apparatus and method for manufacturing a thin film solar cell, which can effectively remove solids by changing the surface tension of the moving mechanism. a bubble of a liquid interface (ie, a surface formed by the film), preventing the formed film from containing a pin hole, and avoiding particles or other impurity particles formed by the homogeneous nucleation from being wrapped or deposited on the surface formed by the film. Thereby, a thin and uniform film without defects can be formed.
本發明之目的之一，在於提供一種製造薄膜太陽能電池之化學浴沈積設備及方法，藉由進行離心運動，粒子會因離心力而脫離處理表面，可避免該均質成核所形成的粒子或其他雜質粒子包裹於薄膜形成的表面，藉此可形成薄且均勻之薄膜。One of the objects of the present invention is to provide a chemical bath deposition apparatus and method for manufacturing a thin film solar cell. By performing centrifugal motion, particles are separated from the treated surface by centrifugal force, and particles or other impurities formed by the homogeneous nucleation can be avoided. The particles are wrapped around the surface of the film to form a thin and uniform film.
本發明之目的之一，在於提供一種製造薄膜太陽能電池之化學浴沈積設備及方法，可只有對基板的單面進行薄膜沈積，另外可減少反應溶液的使用量。One of the objects of the present invention is to provide a chemical bath deposition apparatus and method for manufacturing a thin film solar cell, which can perform film deposition on only one side of the substrate, and can reduce the amount of the reaction solution used.
為了達到上述目的，根據本發明一實施例，提供一種化學浴沈積設備，用以沈積一薄膜於薄膜太陽能電池用之基材，包括：一機架、一基材托座、一覆蓋罩、一擺動機構以及一離心運動機構。該機架，具有一真空室，該真空室與一真空裝置連接，使該真空室的氣體壓力小於大氣壓力。該基材托座，具有複數第一開口，與該機架的真空室連通，該基材托座隔著一第一密封構件設置於該機架上，該基材托座係用以容置該基材，使該基材之一待處理面對向的面與該基材托座接觸，藉由該複數第一開口之真空吸引力而使該基材與該基材托座密合。該覆蓋罩，具有至少一第二開口，作為一反應溶液的入口及出口，其中該覆蓋罩隔著一第二密封構件設置於該基材上，該覆蓋罩與該基材之間形成一容置空間，用以容納該反應溶液。該擺動機構，用以驅動該機架進行搖擺，以產生該反應溶液相對該基材之運動，但維持該反應溶液覆蓋該基材。該離心運動機構，用以驅動該機架進行離心運動，以產生該反應溶液相對該基材之運動，但維持該反應溶液覆蓋該基材；其中，該容置空間的溫度被控制於一預定的範圍內。In order to achieve the above object, according to an embodiment of the present invention, a chemical bath deposition apparatus for depositing a film on a substrate for a thin film solar cell includes: a frame, a substrate holder, a cover, and a cover The swing mechanism and a centrifugal movement mechanism. The frame has a vacuum chamber connected to a vacuum device such that the gas pressure of the vacuum chamber is less than atmospheric pressure. The substrate holder has a plurality of first openings communicating with the vacuum chamber of the frame, the substrate holder being disposed on the frame via a first sealing member, the substrate holder being for receiving The substrate is such that one of the substrates facing the facing surface is in contact with the substrate holder, and the substrate is brought into close contact with the substrate holder by the vacuum attraction of the plurality of first openings. The cover has at least one second opening as an inlet and an outlet of a reaction solution, wherein the cover is disposed on the substrate via a second sealing member, and the cover forms a space with the substrate A space is provided to accommodate the reaction solution. The oscillating mechanism is configured to drive the frame to oscillate to generate movement of the reaction solution relative to the substrate, but to maintain the reaction solution covering the substrate. The centrifugal movement mechanism is configured to drive the frame to perform centrifugal movement to generate movement of the reaction solution relative to the substrate, but maintain the reaction solution to cover the substrate; wherein the temperature of the accommodation space is controlled to a predetermined time In the range.
根據本發明另一實施例，提供一種化學浴沈積方法，包括：提供一基材，設置於該基材托座上，其中該基材具有一第一表面及與該第一表面對向之一第二表面；提供一基材托座，將該基材設置於該基材托座上，使該基材之該第一表面貼附於該基材托座上而露出該第二表面，作為被處理面；提供一覆蓋罩，設置於該基材上，使該覆蓋罩與該基材構成一容置空間；提供一反應溶液，從該覆蓋罩的一開口注入該容置空間中，使該基材的被處理面接觸該反應溶液；以及藉由一搖擺機構及一離心運動機構，驅動該基材托座進行搖擺及離心運動，以產生該反應溶液相對該基材之運動，但維持該反應溶液覆蓋該基材。According to another embodiment of the present invention, there is provided a chemical bath deposition method comprising: providing a substrate disposed on the substrate holder, wherein the substrate has a first surface and one of opposite the first surface a second surface; providing a substrate holder, the substrate is disposed on the substrate holder, and the first surface of the substrate is attached to the substrate holder to expose the second surface a surface to be treated; a cover is disposed on the substrate to form an accommodation space with the substrate; a reaction solution is provided, and the opening is injected into the receiving space from an opening of the cover The treated surface of the substrate contacts the reaction solution; and the substrate holder is driven to swing and centrifuge by a rocking mechanism and a centrifugal movement mechanism to generate movement of the reaction solution relative to the substrate, but maintain The reaction solution covers the substrate.
根據本發明的化學浴沈積設備及方法，例如可應用於製造薄膜太陽能電池之如CdS、ZnS、InS等所構成的緩衝層，藉由低溫製程、低成本的設備、簡單的製程以及減少反應溶液的使用量，形成薄且均勻之薄膜，可只有對基板的單面進行薄膜沈積，薄膜的缺陷少而提高薄膜太陽能電池之效率及降低薄膜太陽能電池的製造成本。The chemical bath deposition apparatus and method according to the present invention can be applied, for example, to a buffer layer made of a thin film solar cell such as CdS, ZnS, InS, etc., by a low temperature process, a low cost apparatus, a simple process, and a reaction solution reduction. The amount of use, forming a thin and uniform film, can only be deposited on one side of the substrate, the film defects are less, and the efficiency of the thin film solar cell is improved and the manufacturing cost of the thin film solar cell is reduced.
有關本發明之前述及其他技術內容、特點與功效，在以下配合參考圖式之一較佳實施例的詳細說明中，將可清楚的呈現。以下實施例中所提到的方向用語，例如：上、下、左、右、前或後等，僅是參考附加圖式的方向。因此，使用的方向用語是用來說明並非用來限制本發明。此外，「A層(或元件)設置於B層(或元件)上」之用語，並不限定為A層直接貼覆接觸B層表面的態樣，例如A層與B層中間尚間隔其他疊層亦為該用語所涵蓋範圍。圖示中，相同的元件係以相同的符號表示。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only directions referring to the additional drawings. Therefore, the directional terminology used is for the purpose of illustration and not limitation. In addition, the term "A layer (or component) is disposed on the B layer (or component)" is not limited to the aspect in which the A layer directly contacts the surface of the B layer, for example, the layer A and the layer B are spaced apart from each other. The layer is also covered by the term. In the drawings, the same elements are denoted by the same symbols.
習知的薄膜太陽能電池的製造步驟，例如第一圖所示，包含步驟S10：提供基板；步驟S20：形成電極層；步驟S30：形成吸收層；步驟S40：形成緩衝層(buffer layer or window layer)；以及步驟S50：形成其他層及封裝。其中，步驟S40：形成緩衝層，使用化學浴沈積法(chemical bath deposition)，形成例如CdS、ZnS、InS等所構成的緩衝層。步驟S50，例如包含形成ZnO層、Al層、AR層(抗反射層)等，最後進行封裝。在步驟S40後以及步驟S50前，可進行例如沖洗(rinse)以及乾燥等步驟，在化學浴之濕式製程後，準備進行例如濺鍍等的乾式製程。The manufacturing steps of the conventional thin film solar cell, as shown in the first figure, include the step S10: providing the substrate; the step S20: forming the electrode layer; the step S30: forming the absorption layer; and the step S40: forming the buffer layer or the buffer layer And step S50: forming other layers and packages. In step S40, a buffer layer is formed, and a chemical bath deposition method is used to form a buffer layer made of, for example, CdS, ZnS, InS, or the like. Step S50 includes, for example, forming a ZnO layer, an Al layer, an AR layer (anti-reflection layer), and the like, and finally performing packaging. After step S40 and before step S50, steps such as rinsing and drying may be performed, and after the chemical bath wet process, a dry process such as sputtering is prepared.
本發明之化學浴沈積設備，可應用於步驟S40的緩衝層之形成。更進一步，本發明之化學浴沈積設備，特別適合應用於任何化學浴沈積過程中有氣泡產生的反應步驟。The chemical bath deposition apparatus of the present invention can be applied to the formation of the buffer layer of the step S40. Furthermore, the chemical bath deposition apparatus of the present invention is particularly suitable for use in a reaction step in which bubble generation occurs in any chemical bath deposition process.
第二圖表示根據本發明一實施例之化學浴沈積設備的示意圖。本發明之化學浴沈積設備500，用以沈積一薄膜於薄膜太陽能電池用之基材120，包括：機架100、基材托座110、覆蓋罩200、搖擺機構400(所在位置係指擺動機構的擺動軸，未顯示其機械驅動裝置)400以及離心運動機構(未圖示)。The second figure shows a schematic view of a chemical bath deposition apparatus in accordance with an embodiment of the present invention. The chemical bath deposition apparatus 500 of the present invention is used for depositing a film on a substrate 120 for a thin film solar cell, comprising: a frame 100, a substrate holder 110, a cover 200, and a rocking mechanism 400 ( The position refers to the swinging shaft of the swinging mechanism, and the mechanical driving device 400 and the centrifugal moving mechanism (not shown) are not shown.
機架100，具有一真空室150，該真空室與真空裝置140(例如真空泵)連接，使該真空室的氣體壓力小於大氣壓力。該基材托座110，具有複數第一開口，與該機架100的真空室150連通，該基材托座110隔著第一密封構件132設置於該機架100上，該基材托座110係用以容置該基材，使該基材之一待處理面對向的面與該基材托座接觸，如此該待處理面可與反應溶液220接觸，藉由該複數第一開口(未圖示，第一開口係分佈設置於該基材托座上)之真空吸引力而使該基材與該基材托座密合。該覆蓋罩200，具有第二開口210，作為反應溶液220的入口及出口。該覆蓋罩200隔著第二密封構件134設置於該基材120上，該覆蓋罩與該基材之間形成一容置空間，用以容納該反應溶液220。The frame 100 has a vacuum chamber 150 connected to a vacuum device 140 (e.g., a vacuum pump) such that the gas pressure of the vacuum chamber is less than atmospheric pressure. The substrate holder 110 has a plurality of first openings communicating with the vacuum chamber 150 of the frame 100. The substrate holder 110 is disposed on the frame 100 via a first sealing member 132. The 110 system is configured to receive the substrate such that a surface of the substrate to be treated faces is in contact with the substrate holder, such that the surface to be treated can be in contact with the reaction solution 220 by the plurality of first openings The vacuum attraction force (not shown, the first opening is distributed on the substrate holder) causes the substrate to adhere to the substrate holder. The cover 200 has a second opening 210 as an inlet and an outlet of the reaction solution 220. The cover 200 is disposed on the substrate 120 via the second sealing member 134. An accommodating space is formed between the cover and the substrate for accommodating the reaction solution 220.
擺動機構400，用以驅動該機架進行搖擺，以產生該反應溶液相對該基材之運動，但維持該反應溶液覆蓋該基材。第三圖表示根據本發明一實施例之化學浴沈積設備的示意圖，其中(a)表示傾斜角度為0的狀態；(b)表示傾斜一特定角度的狀態。如第三圖(a)及(b)所示，所在位置係指擺動機構400的擺動軸，以基材托座在水平面之一任意軸，作為一擺動軸，使該基材托座以該搖擺軸進行上下搖擺，只要維持該反應溶液覆蓋該基材。第三圖(b)表示進行搖擺時的某一傾斜角度。The oscillating mechanism 400 is configured to drive the frame to oscillate to generate movement of the reaction solution relative to the substrate, but maintain the reaction solution to cover the substrate. The third drawing shows a schematic view of a chemical bath deposition apparatus according to an embodiment of the present invention, wherein (a) shows a state in which the inclination angle is 0; and (b) shows a state in which a specific angle is inclined. As shown in the third figure (a) and (b), The position refers to the swinging axis of the swinging mechanism 400, and the substrate holder is seated on any one of the horizontal planes as an swinging shaft, so that the substrate holder swings up and down with the rocking axis, as long as the reaction solution is maintained to cover the base. material. The third figure (b) shows a certain tilt angle when the swing is performed.
離心運動機構，係用以驅動該機架進行離心運動，係以該機架在水平面之幾何中心作為基準點，使該基準點沿一橢圓移動，而使該機架在水平面重複繞行一橢圓運動，以產生該反應溶液相對該基材之運動，但維持該反應溶液覆蓋該基材。第四圖表示根據本發明一實施例之化學浴沈積設備的機架進行離心運動的俯視示意圖。例如，標記1～5表示該機架的沿橢圓運動之軌跡。該橢圓運動係在水平面上進行，而搖擺運動則使該機架上下傾斜晃動。再者，離心運動機構，可以該機架在水平面之幾何中心作為中心點，使機架在水平面進行自轉的運動，如第五圖所示。更進一步，離心運動機構可以該機架在水平面之幾何中心作為中心點，使機架在水平面進行自轉的運動，且以該機架在水平面之幾何中心作為一基準點，使該基準點沿一橢圓移動，而使該機架在水平面重複繞行該橢圓運動，如第六圖所示。第四圖～第六圖中，箭號表示運動的方向。a centrifugal movement mechanism for driving the frame for centrifugal movement, wherein the geometric center of the horizontal plane of the frame is used as a reference point to move the reference point along an ellipse, and the frame is repeatedly circumscribed by an ellipse in a horizontal plane. Movement to produce movement of the reaction solution relative to the substrate, but maintaining the reaction solution to cover the substrate. The fourth figure shows a top plan view of a centrifugal movement of a frame of a chemical bath deposition apparatus according to an embodiment of the present invention. For example, the marks 1 to 5 indicate the trajectory of the frame along the elliptical motion. The elliptical motion is performed on a horizontal plane, and the rocking motion causes the rack to tilt up and down. Furthermore, the centrifugal movement mechanism can make the frame rotate at the horizontal plane as the center point of the geometric center of the horizontal plane, as shown in the fifth figure. Further, the centrifugal movement mechanism can take the frame as a center point in the geometric center of the horizontal plane, and make the frame rotate in the horizontal plane, and use the geometric center of the frame in the horizontal plane as a reference point, so that the reference point is along a The ellipse moves so that the frame repeats the elliptical motion in the horizontal plane, as shown in the sixth figure. In the fourth to sixth figures, the arrows indicate the direction of motion.
再者，該容置空間的溫度被控制於一預定的範圍內。例如覆蓋罩可更具備一加熱器，與一溫度控制器連接，控制該容置空間的溫度，以提高反應溶液的溫度，促進反應速率，提高沈積速度。此外，該機架可更包括一加熱板，設置靠近該基材托座，用以加熱該基材。例如該加熱板可整合於該基材托座內，如此可以加熱基材。Furthermore, the temperature of the accommodating space is controlled within a predetermined range. For example, the cover may further comprise a heater connected to a temperature controller to control the temperature of the accommodating space to increase the temperature of the reaction solution, promote the reaction rate, and increase the deposition speed. In addition, the frame may further include a heating plate disposed adjacent to the substrate holder for heating the substrate. For example, the heating plate can be integrated into the substrate holder so that the substrate can be heated.
反應溶液220，可使用習知的反應溶液，例如美國專利公開第2010/0087027、2011/0111129號等揭露的溶液或者其他文獻揭露的溶液。於一實施例，反應溶液220可由包含硫脲(thiourea)及去離子水之溶液與包含硫酸鎘或硫酸鋅、氨及去離子水之溶液混合所構成。As the reaction solution 220, a conventional reaction solution can be used, for example, a solution disclosed in U.S. Patent Publication No. 2010/0087027, 2011/0111129, or the like, or a solution disclosed in other documents. In one embodiment, the reaction solution 220 may be composed of a solution comprising thiourea and deionized water mixed with a solution comprising cadmium sulfate or zinc sulfate, ammonia, and deionized water.
於一實施例，覆蓋罩可更具有一凹槽，位於該覆蓋罩的下緣，該凹槽中填充有多孔性材料，用以捕捉微粒子。第七圖根據本發明一實施例之化學浴沈積設備的覆蓋罩之示意圖，(a)表示側視圖，(b)表示俯視圖。第七圖(b)中，斜線區域表示凹槽215，第七圖(a)中凹槽215設置於覆蓋罩200的下緣的周圍，於其中可填充例如乾淨及不與反應溶液產生反應之金屬絨、玻璃絨、玻璃纖維等多孔性材料，反應溶液220因離心運動及搖擺運動而流入凹槽215中，反應溶液220中的微粒子可被該些多孔性材料捕捉而無法再度回到基板的被處理表面。於另一實施例，凹槽215與篩網之組合，可有效地捕捉微粒子。In one embodiment, the cover may further have a recess located at a lower edge of the cover, the recess being filled with a porous material for capturing fine particles. Figure 7 is a schematic view of a cover of a chemical bath deposition apparatus according to an embodiment of the present invention, (a) showing a side view, and (b) showing a plan view. In the seventh diagram (b), the hatched area indicates the groove 215, and the groove 215 in the seventh figure (a) is disposed around the lower edge of the cover 200, and can be filled, for example, clean and does not react with the reaction solution. A porous material such as metal wool, glass wool or glass fiber, the reaction solution 220 flows into the groove 215 due to the centrifugal movement and the rocking motion, and the fine particles in the reaction solution 220 can be captured by the porous materials and cannot be returned to the substrate again. The surface being treated. In another embodiment, the combination of the recess 215 and the screen effectively captures the microparticles.
第一密封構件132的實施，例如可藉由O形環及凹槽來實現，例如第二密封構件134可藉由O形環來實現，以達到液體密封的目的，亦即反應溶液220被緊密地密封於該容置空間中，不滲漏。The implementation of the first sealing member 132 can be realized, for example, by an O-ring and a groove. For example, the second sealing member 134 can be realized by an O-ring for the purpose of liquid sealing, that is, the reaction solution 220 is tightly closed. The ground is sealed in the accommodating space without leaking.
於一實施例，基材120為製造薄膜太陽能電池過程中之基板，例如氧化的矽基板、可撓性基板、CIGS基板等。In one embodiment, the substrate 120 is a substrate in the process of manufacturing a thin film solar cell, such as an oxidized germanium substrate, a flexible substrate, a CIGS substrate, or the like.
擺動機構及離心運動機構可將機架上下左右搖擺晃動，以達到消除氣泡的功效。The swing mechanism and the centrifugal motion mechanism can swing the rack up and down and left and right to achieve the effect of eliminating bubbles.
擺動機構可藉由擺動軸以及旋轉馬達來實施，離心運動機構可藉由例如螺桿等的位移裝置來實施。The swing mechanism can be implemented by a swing shaft and a rotary motor, and the centrifugal motion mechanism can be implemented by a displacement device such as a screw.
根據本發明另一實施例，提供一種化學浴沈積方法，第八圖表示根據本發明一實施例之化學浴沈積方法的流程圖，同時參考第二圖，該方法包括：步驟S71：提供基材120，設置於該基材托座110上，其中該基材120具有一第一表面及與該第一表面對向之一第二表面；步驟S72：提供一基材托座，將該基材設置於該基材托座110上，使該基材之該第一表面貼附於該基材托座110上而露出該第二表面，作為被處理面；步驟S73：提供覆蓋罩200，設置於該基材120上，使該覆蓋罩200與該基材120構成一容置空間；步驟S74：提供反應溶液220，從該覆蓋罩200的開口210注入該容置空間中，使該基材120的被處理面接觸該反應溶液220；以及步驟S75：藉由搖擺機構400及離心運動機構，驅動該基材托座進行搖擺及離心運動，以產生該反應溶液相對該基材之運動，但維持該反應溶液覆蓋該基材。According to another embodiment of the present invention, there is provided a chemical bath deposition method, and an eighth diagram showing a flow chart of a chemical bath deposition method according to an embodiment of the present invention, while referring to the second figure, the method comprising: Step S71: providing a substrate 120, disposed on the substrate holder 110, wherein the substrate 120 has a first surface and a second surface opposite the first surface; Step S72: providing a substrate holder, the substrate Provided on the substrate holder 110 such that the first surface of the substrate is attached to the substrate holder 110 to expose the second surface as a processed surface; Step S73: providing a cover 200, setting On the substrate 120, the cover 200 and the substrate 120 form an accommodating space; Step S74: providing a reaction solution 220, and injecting into the accommodating space from the opening 210 of the cover 200 to make the substrate The treated surface of 120 is in contact with the reaction solution 220; and in step S75, the substrate holder is driven to swing and centrifuge by the rocking mechanism 400 and the centrifugal movement mechanism to generate movement of the reaction solution relative to the substrate, but Maintaining the reaction solution to cover the base .
步驟S76：重複步驟S75之動作，直至在該基材的被處理面形成一預定厚度之薄膜。Step S76: The action of step S75 is repeated until a film of a predetermined thickness is formed on the treated surface of the substrate.
具體地，反應溶液220，可使用習知的反應溶液，例如美國專利公開第2010/0087027號揭露的溶液或者其他文獻揭露的溶液。於一實施例，反應溶液可由包含硫脲(thiourea)及去離子水之溶液與包含硫酸鎘或硫酸鋅、氨及去離子水之溶液混合所構成。Specifically, as the reaction solution 220, a conventional reaction solution can be used, for example, a solution disclosed in U.S. Patent Publication No. 2010/0087027 or a solution disclosed in other documents. In one embodiment, the reaction solution may be composed of a solution comprising thiourea and deionized water mixed with a solution comprising cadmium sulfate or zinc sulfate, ammonia, and deionized water.
於一實施例，覆蓋罩可更具有一凹槽，位於該覆蓋罩的下緣，該凹槽中填充有多孔性材料，用以捕捉微粒子。該凹槽可利用上述的例子實施，例如第七圖所示的凹槽215，於其中填充乾淨及不與反應溶液產生反應之金屬絨、玻璃絨、玻璃纖維等多孔性材料。或者，凹槽215與篩網之組合，可有效地捕捉微粒子。In one embodiment, the cover may further have a recess located at a lower edge of the cover, the recess being filled with a porous material for capturing fine particles. The groove can be implemented by the above-described example, for example, the groove 215 shown in Fig. 7, in which a porous material such as metal wool, glass wool, or glass fiber which is clean and does not react with the reaction solution is filled. Alternatively, the combination of the recess 215 and the screen can effectively capture the microparticles.
以下，以實施例更具體地說明本發明的化學浴沈積設備及方法。Hereinafter, the chemical bath deposition apparatus and method of the present invention will be more specifically described by way of examples.
實施例1：Example 1:
添加硫酸鎘(CdSO4)、氫氧化銨、硫脲及去離子水，混合均勻，製備包含濃度0.0015M之硫酸鎘(CdSO4)、濃度1.5M之氫氧化銨、濃度0.0075M之硫脲的反應溶液。先將基材120設置於基材托座上，將覆蓋罩200設置於該基材120上，使該覆蓋罩200與該基材120構成一容置空間，藉由O形環(第一密封構件及第二密封構件)，使該容置空間密封。Cadmium sulfate (CdSO 4 ), ammonium hydroxide, thiourea and deionized water were added and mixed uniformly to prepare cadmium sulfate (CdSO 4 ) having a concentration of 0.0015 M, ammonium hydroxide having a concentration of 1.5 M, and thiourea having a concentration of 0.0075 M. Reaction solution. The substrate 120 is first disposed on the substrate holder, and the cover 200 is disposed on the substrate 120, so that the cover 200 and the substrate 120 form an accommodation space by the O-ring (first seal) The member and the second sealing member seal the accommodation space.
將製備的反應溶液由覆蓋罩200的開口210注入容置空間，與基材120接觸。加熱基材120之加熱器，設定為75℃。容置空間中的反應溶液，加熱至60℃。進行離心運動及搖擺運動12分鐘後，取出基板，量測所得的鍍膜，得到膜厚約60nm的CdS膜。The prepared reaction solution is injected into the accommodating space from the opening 210 of the cover 200 to be in contact with the substrate 120. The heater of the substrate 120 was heated to 75 °C. The reaction solution in the accommodation space was heated to 60 °C. After centrifugation and rocking motion for 12 minutes, the substrate was taken out, and the obtained plating film was measured to obtain a CdS film having a film thickness of about 60 nm.
於一實施例，基材120可為製造薄膜太陽能電池過程中之基板，例如氧化的矽基板、可撓性基板、CIGS基板等。In one embodiment, the substrate 120 can be a substrate during the manufacture of a thin film solar cell, such as an oxidized germanium substrate, a flexible substrate, a CIGS substrate, or the like.
綜上所述，根據本發明的化學浴沈積設備及方法，例如可應用於製造薄膜太陽能電池之如CdS、ZnS、InS等所構成的緩衝層，藉由低溫製程、低成本的設備、簡單的製程以及減少反應溶液的使用量，形成薄且均勻之薄膜，可只有對基板的單面進行薄膜沈積，薄膜的缺陷少而提高薄膜太陽能電池之效率及降低薄膜太陽能電池的製造成本。In summary, the chemical bath deposition apparatus and method according to the present invention can be applied, for example, to a buffer layer made of a thin film solar cell such as CdS, ZnS, InS, etc., by a low-temperature process, a low-cost device, and a simple The process and the use of the reaction solution are reduced to form a thin and uniform film, which can be deposited only on one side of the substrate, and the defects of the film are small to improve the efficiency of the thin film solar cell and reduce the manufacturing cost of the thin film solar cell.
以上雖以特定實施例說明本發明，但並不因此限定本發明之範圍，只要不脫離本發明之要旨，熟悉本技藝者瞭解在不脫離本發明的意圖及範圍下可進行各種變形或變更。另外本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外，摘要部分和標題僅是用來輔助專利文件搜尋之用，並非用來限制本發明之權利範圍。The present invention has been described in detail with reference to the preferred embodiments of the present invention, and the scope of the invention is not limited thereto, and it is understood that various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any embodiment or application of the invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.
S10～S76．．．製程步驟S10 ~ S76. . . Process step
100．．．機架100. . . frame
110．．．基材托座110. . . Substrate holder
120．．．基材120. . . Substrate
132．．．第一密封構件132. . . First sealing member
134．．．第二密封構件134. . . Second sealing member
140．．．真空裝置140. . . Vacuum device
150．．．真空室150. . . Vacuum chamber
200．．．覆蓋罩200. . . Cover
210．．．第二開口210. . . Second opening
215．．．凹槽215. . . Groove
220．．．反應溶液220. . . Reaction solution
400．．．擺動機構的擺動軸400. . . Swing axis of the swing mechanism
500．．．化學浴沈積設備500. . . Chemical bath deposition equipment
第一圖表示習知的薄膜太陽能電池的製造步驟。The first figure shows the manufacturing steps of a conventional thin film solar cell.
第二圖表示根據本發明一實施例之化學浴沈積設備的示意圖。The second figure shows a schematic view of a chemical bath deposition apparatus in accordance with an embodiment of the present invention.
第三圖表示根據本發明一實施例之化學浴沈積設備的示意圖，其中(a)表示傾斜角度為0的狀態；(b)表示傾斜一特定角度的狀態。The third drawing shows a schematic view of a chemical bath deposition apparatus according to an embodiment of the present invention, wherein (a) shows a state in which the inclination angle is 0; and (b) shows a state in which a specific angle is inclined.
第四圖表示根據本發明一實施例之化學浴沈積設備的機架進行離心運動的俯視示意圖。The fourth figure shows a top plan view of a centrifugal movement of a frame of a chemical bath deposition apparatus according to an embodiment of the present invention.
第五圖表示根據本發明另一實施例之化學浴沈積設備的機架進行離心運動的俯視示意圖。Fig. 5 is a top plan view showing the centrifugal movement of the frame of the chemical bath deposition apparatus according to another embodiment of the present invention.
第六圖表示根據本發明另一實施例之化學浴沈積設備的機架進行離心運動的俯視示意圖。Fig. 6 is a top plan view showing the centrifugal movement of the frame of the chemical bath deposition apparatus according to another embodiment of the present invention.
第七圖根據本發明一實施例之化學浴沈積設備的覆蓋罩之示意圖，(a)表示側視透視圖，(b)表示俯視透視圖。Figure 7 is a schematic view of a cover of a chemical bath deposition apparatus according to an embodiment of the present invention, (a) showing a side perspective view, and (b) showing a top perspective view.
第八圖表示根據本發明一實施例之化學浴沈積方法的流程圖。Figure 8 is a flow chart showing a chemical bath deposition method in accordance with an embodiment of the present invention.
100．．．機架100. . . frame
110．．．基材托座110. . . Substrate holder
120．．．基材120. . . Substrate
132．．．第一密封構件132. . . First sealing member
134．．．第二密封構件134. . . Second sealing member
140．．．真空裝置140. . . Vacuum device
150．．．真空室150. . . Vacuum chamber
200．．．覆蓋罩200. . . Cover
210．．．第二開口210. . . Second opening
220．．．反應溶液220. . . Reaction solution
400．．．擺動機構的擺動軸400. . . Swing axis of the swing mechanism
500．．．化學浴沈積設備500. . . Chemical bath deposition equipment
Claims (19)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149900A TW201327867A (en) | 2011-12-30 | 2011-12-30 | Chemical bath deposition device and method thereof |
| CN2012100722278A CN103184439A (en) | 2011-12-30 | 2012-03-19 | Chemical bath deposition apparatus and method for manufacturing thin film solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149900A TW201327867A (en) | 2011-12-30 | 2011-12-30 | Chemical bath deposition device and method thereof |
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|---|---|
| TW201327867A true TW201327867A (en) | 2013-07-01 |
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| TW100149900A TW201327867A (en) | 2011-12-30 | 2011-12-30 | Chemical bath deposition device and method thereof |
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| TW (1) | TW201327867A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI468543B (en) * | 2013-08-30 | 2015-01-11 | Substrate transfer and processing system and substrate transfer and processing methods | |
| DE102013220810A1 (en) * | 2013-10-15 | 2015-04-16 | Robert Bosch Gmbh | Device for the homogeneous wet-chemical treatment of substrates |
| US9433966B2 (en) * | 2014-02-21 | 2016-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system of chemical bath deposition |
| TWI593131B (en) * | 2014-10-27 | 2017-07-21 | 亞智科技股份有限公司 | Wet process reaction apparatus and wet process reaction vessel thereof |
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| US7700161B2 (en) * | 2007-05-30 | 2010-04-20 | Sisom Thin Films Llc | Film growth system and method |
| KR101097712B1 (en) * | 2011-05-31 | 2011-12-22 | 에스엔유 프리시젼 주식회사 | Deposition apparatus using chemical bath deposition |
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