TW201324570A - Field emission display - Google Patents
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Abstract
Description
本發明是有關於一種場發射顯示器的結構，特別是有關於場發射顯示器基板上的發射器設置區與閘極驅動單元設置的結構。The present invention relates to a structure of a field emission display, and more particularly to a structure in which a transmitter setting area and a gate driving unit are disposed on a field emission display substrate.
圖1所示為先前技術之場發射顯示器的上視圖，發射器設置區54散佈於資料電極53之上並沒有特別考慮其設置位置。而發射器57的置放位置則是由奈米粒子(nano particle)散佈於基板51上的位置所決定。由於旋轉塗佈器(spin coater)灑出奈米粒子時，因旋轉塗佈器置於基板中央之故，奈米粒子因離心力的關係，於基板51上的分布密度就呈現疏密不一致的情形。而場發射顯示器就會因發射器57的密度疏密不一致而呈現亮度不均勻的缺點。再者，奈米粒子灑佈前，基板上已形成的各層結構也影響奈米粒子落在基板上的位置。1 is a top view of a prior art field emission display with the emitter setting area 54 interspersed over the data electrode 53 without particular consideration of its location. The placement position of the emitter 57 is determined by the position at which the nano particles are dispersed on the substrate 51. When the spin coater sprinkles the nanoparticles, the distribution of the nanoparticle on the substrate 51 is inconsistent due to the centrifugal force due to the spin coater being placed in the center of the substrate. . However, the field emission display has the disadvantage of uneven brightness due to the inconsistent density of the emitter 57. Furthermore, the structure of each layer formed on the substrate before the nanoparticles are sprinkled also affects the position at which the nanoparticles fall on the substrate.
另一個影響亮度的因素是閘極驅動電壓Vg的壓降問題。閘極驅動單元55輸出閘極電壓Vg以驅動閘極52時，閘極電壓Vg沿第一方向由基板51之第一側(例如接近閘極驅動單元55之一側)傳送到基板51之第二側(例如遠離閘極驅動單元55之一側)，閘極電壓Vg會因阻抗之故而有壓降。此壓降也將使不同位置的場發射顯示器所受的電壓不同而導致亮度不均。Another factor that affects brightness is the voltage drop problem of the gate drive voltage Vg. When the gate driving unit 55 outputs the gate voltage Vg to drive the gate 52, the gate voltage Vg is transmitted from the first side of the substrate 51 (for example, near the side of the gate driving unit 55) to the substrate 51 in the first direction. On the two sides (for example, away from one side of the gate driving unit 55), the gate voltage Vg has a voltage drop due to the impedance. This voltage drop will also cause the field emission display at different locations to experience different voltages resulting in uneven brightness.
因此，場發射顯示器亮度不均的問題存在著，且亟需一方法來解決。Therefore, the problem of uneven brightness of the field emission display exists, and a method is needed to solve it.
本發明的目的就是在提供一種亮度均勻的發射顯示器。It is an object of the present invention to provide an emissive display having uniform brightness.
本發明提出一種場發射顯示器，主要包括基板、資料電極、閘極、閘極驅動單元發射器設置區以及複數發射器。其中，閘極形成於資料電極之上，並與資料電極形成至少一重疊區。複數發射器設置於資料電極上方之一發射器設置區內，且發射器設置區係設置於重疊區內。閘極驅動單元，置放於基板之第一側，並輸出一閘極電壓以驅動閘極。其中，發射器設置區包括了第一設置區與第二設置區。第一設置區，係位於較靠近閘極驅動單元之一側。第二設置區，係位於較遠離閘極驅動單元之另一側，且第一設置區的面積小於第二設置區的面積。其中，第一設置區與第二設置區係以重疊區內之資料電極的中央線為界。The invention provides a field emission display, which mainly comprises a substrate, a data electrode, a gate, a gate driving unit emitter setting area and a plurality of emitters. Wherein, the gate is formed on the data electrode and forms at least one overlapping area with the data electrode. The plurality of transmitters are disposed in one of the transmitter setting areas above the data electrodes, and the transmitter setting area is disposed in the overlapping area. The gate driving unit is placed on the first side of the substrate and outputs a gate voltage to drive the gate. The transmitter setting area includes a first setting area and a second setting area. The first setting area is located closer to one side of the gate driving unit. The second setting area is located on the other side farther from the gate driving unit, and the area of the first setting area is smaller than the area of the second setting area. Wherein, the first setting area and the second setting area are bounded by a central line of the data electrodes in the overlapping area.
在本發明的較佳實施例中，上述之場發射顯示器之基板上，資料電極往基板之第二側方向有至少有一突出部，且發射器設置區置放於突出部上。In a preferred embodiment of the present invention, on the substrate of the field emission display, the data electrode has at least one protruding portion toward the second side of the substrate, and the emitter setting region is placed on the protruding portion.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。The above and other objects, features and advantages of the present invention will become more <RTIgt;
以下將參照圖2、圖3(A)-3(C)說明本發明的實施內容。圖2繪示場發射顯示器之上視圖。圖3(A)、3(B)、3(C)則分別繪示圖(2)中A-A’、B-B’、C-C’的剖面圖。如圖2所示，場發射顯示器具有資料電極3與閘極2分別以其圖樣形成於基板1上。發射器設置區4設置於資料電極3上，發射器7則置放於發射器設置區4之內。在此實施例中，資料電極3與閘極2有重疊區域，而發射器設置區4則設置於資料電極3與閘極2的重疊區域內。閘極驅動單元5輸出驅動電壓Vg，用以驅動閘極2，且閘極驅動單元5置放於基板1之左側。在明白本發明之精神後，將閘極驅動單元5置放於基板1右側也能達到相同的效果。本實施例僅方便說明，並不限定閘極驅動單元5只能置放於基板1之左側。The implementation of the present invention will be described below with reference to Figs. 2 and 3(A)-3(C). Figure 2 depicts a top view of a field emission display. 3(A), 3(B), and 3(C) are cross-sectional views showing A-A', B-B', and C-C' in Fig. 2, respectively. As shown in FIG. 2, the field emission display has a data electrode 3 and a gate 2 formed on the substrate 1 in a pattern thereof. The emitter setting area 4 is disposed on the data electrode 3, and the emitter 7 is placed in the emitter setting area 4. In this embodiment, the data electrode 3 has an overlapping area with the gate 2, and the emitter setting area 4 is disposed in the overlapping area of the data electrode 3 and the gate 2. The gate driving unit 5 outputs a driving voltage Vg for driving the gate 2, and the gate driving unit 5 is placed on the left side of the substrate 1. After understanding the spirit of the present invention, the same effect can be achieved by placing the gate driving unit 5 on the right side of the substrate 1. This embodiment is only for convenience of explanation, and it is not limited that the gate driving unit 5 can be placed only on the left side of the substrate 1.
閘極驅動單元5輸出閘極電壓Vg由基板1之第一側傳送到基板1之第二側，例如由左側傳送至右側。但閘極電壓Vg因為訊號傳遞較遠以及阻抗之故，電壓會由基板1之第一側(左側)到基板1之第二側(右側)逐漸遞減。如圖2所示，閘極電壓Vg由在基板1之左側為35伏特逐漸向基板1之右側遞減到約33伏特。因此，若假設發射器7在基板1上的密度是均勻的情況下，場發射顯示器在靠近基板1之左側的亮度會比右側的亮度高。但實際上，由於奈米粒子灑佈於基板1上的密度並不均勻，發射器7的密度也就不均勻。透過適當得設置發射器設置區4，可以改善因閘極電壓Vg壓降所導致場發射顯示器在靠近基板1之左側的亮度會比右側的亮度高的缺點。The output gate voltage Vg of the gate driving unit 5 is transmitted from the first side of the substrate 1 to the second side of the substrate 1, for example, from the left side to the right side. However, because the gate voltage Vg is transmitted farther and the impedance, the voltage gradually decreases from the first side (left side) of the substrate 1 to the second side (right side) of the substrate 1. As shown in FIG. 2, the gate voltage Vg gradually decreases toward the right side of the substrate 1 to about 33 volts by 35 volts on the left side of the substrate 1. Therefore, if the density of the emitter 7 on the substrate 1 is assumed to be uniform, the brightness of the field emission display on the left side of the substrate 1 will be higher than that on the right side. However, in practice, since the density of the nanoparticles on the substrate 1 is not uniform, the density of the emitter 7 is not uniform. By appropriately setting the emitter setting region 4, it is possible to improve the disadvantage that the luminance of the field emission display near the substrate 1 is higher than that of the right side due to the gate voltage Vg voltage drop.
以下接著說明本實施例中，如何設置發射器設置區4。此實施例中，如圖2所示，閘極2包含複數條縱向配置的閘極線22，每一縱向配置的閘極線22包含複數向基板左側延伸的閘極凸出部21，資料電極3包含複數條縱向配置的資料線32，每一縱向配置的資料線32包含複數向基板右側延伸的資料電極凸出部31，每一發射器設置區4位於每一組對向延伸的閘極凸出部21與資料電極凸出部31的重疊區域內。又如圖3(A)-3(C)剖面圖所示，發射器設置區4位於資料電極3上方，並包含第一設置區41與第二設置區42，第一設置區41位於較靠近閘極驅動單元5之一側，而第二設置區42位於較遠離閘極驅動單元5之另一側，且第一設置區41的面積小於第二設置區42的面積，而第一設置區41與該第二設置區42係以資料電極凸出部31的中央線L為界。甚至，第一設置區41的面積可以為零，亦即，發射器7可僅設置於發射器設置區4的第二設置區42。Next, how to set the emitter setting area 4 in the present embodiment will be described below. In this embodiment, as shown in FIG. 2, the gate 2 includes a plurality of longitudinally disposed gate lines 22, and each of the longitudinally disposed gate lines 22 includes a plurality of gate protrusions 21 extending toward the left side of the substrate, and the data electrodes 3 includes a plurality of longitudinally disposed data lines 32, each of the longitudinally disposed data lines 32 including a plurality of data electrode projections 31 extending to the right side of the substrate, each emitter setting region 4 being located at each of the oppositely extending gates The overlapping portion of the projection 21 and the data electrode projection 31 is in the overlapping region. As shown in the cross-sectional view of FIG. 3(A)-3(C), the emitter setting area 4 is located above the data electrode 3, and includes a first setting area 41 and a second setting area 42, and the first setting area 41 is located closer. One side of the gate driving unit 5, and the second setting area 42 is located on the other side farther from the gate driving unit 5, and the area of the first setting area 41 is smaller than the area of the second setting area 42, and the first setting area The second installation area 42 is bounded by the center line L of the data electrode projection 31. Even, the area of the first setting area 41 may be zero, that is, the emitter 7 may be disposed only in the second setting area 42 of the emitter setting area 4.
基板之第一側(左側)的情況如下所述。如圖2與圖3(A)所示，閘極電壓Vg為35伏特，而圖3(A)中第二設置區42因設置於奈米粒子密度較低的區域，發射器7的密度也較低，故發射器7發光強度較低。而基板之第二側(右側)的情況又如圖2與圖3(C)與以下所述。閘極電壓Vg因壓降之故僅為33伏特，但圖3(C)中第二設置區42卻是設置於奈米粒子密度較高的區域，發射器7的密度反而較高，故發射器7發光強度較強。由於場發射顯示器的亮度皆與閘極電壓Vg和發射器7發光強度呈現正相關，如此便可補償閘極電壓Vg壓降所產生的問題。藉由適當得設置發射器設置區4，調整了發射器7在基板1之第一側(左側)的密度與在基板1之第二側(右側)的密度，間接調整發射器7在基板1之第一側(左側)的的發光強度與在基板1之第二側(右側)的的發光強度，達到改善場發射顯示器因閘極電壓Vg壓降所造成亮度不均勻的問題。The case of the first side (left side) of the substrate is as follows. As shown in FIG. 2 and FIG. 3(A), the gate voltage Vg is 35 volts, and in FIG. 3(A), the second set region 42 is disposed in a region where the density of the nanoparticle is low, and the density of the emitter 7 is also Lower, so the emitter 7 has a lower luminous intensity. The case of the second side (right side) of the substrate is as shown in Fig. 2 and Fig. 3(C) and below. The gate voltage Vg is only 33 volts due to the voltage drop, but the second set region 42 in Fig. 3(C) is placed in a region where the density of the nanoparticle is high, and the density of the emitter 7 is relatively high, so the emission is The luminous intensity of the device 7 is strong. Since the brightness of the field emission display is positively correlated with the gate voltage Vg and the luminous intensity of the emitter 7, the problem caused by the voltage drop of the gate voltage Vg can be compensated for. By appropriately setting the emitter setting region 4, the density of the emitter 7 on the first side (left side) of the substrate 1 and the density on the second side (right side) of the substrate 1 are adjusted, and the emitter 7 is indirectly adjusted on the substrate 1 The luminous intensity of the first side (left side) and the luminous intensity of the second side (right side) of the substrate 1 achieve a problem of improving brightness unevenness caused by the gate voltage Vg voltage drop of the field emission display.
圖4所示為圖2中A-A’的剖面圖。以下更加詳細說明此實施例的剖面圖。資料電極3為第一金屬層(例如：鎳、鉻)所形成，閘極2則是由至少兩層金屬層所形成，在此實施例中是由第二金屬層6與閘金屬層8所形成，第二金屬層6可以是鋁，而閘金屬層8可以是鉻。Fig. 4 is a cross-sectional view taken along line A-A' of Fig. 2. A cross-sectional view of this embodiment will be described in more detail below. The data electrode 3 is formed of a first metal layer (for example, nickel or chromium), and the gate 2 is formed of at least two metal layers, in this embodiment, a second metal layer 6 and a gate metal layer 8. Formed, the second metal layer 6 may be aluminum and the gate metal layer 8 may be chromium.
資料電極3形成後，阻抗層(resist layer)9與第一絕緣層10(例如：二氧化矽)，分別覆蓋於資料電極3之上，且第一絕緣層10置於阻抗層9之上，接著形成閘極2中的第二金屬層6於第一絕緣層10上。接著進行撒佈奈米粒子，奈米粒子經由旋轉塗佈器(spin coater)灑出於基板1上，奈米粒子因離心力以及基板1上已形成各層結構的關係，其分布密度就會呈現疏密不一致的情形。閘金屬層8則形成於第二金屬層6與奈米粒子之上，並與第二金屬層6電性連接，且閘金屬層8延伸至資料電極3上方而與資料電極3有重疊區域。接著，移除奈米粒子並在上述重疊區域進行蝕刻即可在第一絕緣層10造出孔洞，發射器7則設置於孔洞之中。適當得選擇蝕刻區，即是適當得設置發射器設置區4。藉此而達到改善場發射顯示器亮度不均勻的理由如上述實施例中所述，此處不再贅述。After the data electrode 3 is formed, a resist layer 9 and a first insulating layer 10 (for example, hafnium oxide) are respectively overlaid on the data electrode 3, and the first insulating layer 10 is placed on the resistive layer 9, Next, a second metal layer 6 in the gate 2 is formed on the first insulating layer 10. Next, the spun nanoparticle is sprinkled, and the nanoparticle is sprinkled on the substrate 1 via a spin coater. The nanoparticle is densified by the centrifugal force and the structure of each layer formed on the substrate 1. Inconsistent situation. The gate metal layer 8 is formed on the second metal layer 6 and the nano particles, and is electrically connected to the second metal layer 6, and the gate metal layer 8 extends over the data electrode 3 to overlap the data electrode 3. Next, the nanoparticles are removed and etched in the overlap region to create holes in the first insulating layer 10, and the emitter 7 is disposed in the holes. It is appropriate to select the etched region, that is, it is appropriate to set the emitter setting region 4. Therefore, the reason for improving the brightness unevenness of the field emission display is as described in the above embodiments, and details are not described herein again.
圖5、圖6(A)-6(C)說明本發明的第二實施例。圖5繪示為上視圖。圖6(A)、6(B)、6(C)則分別繪示圖5中A-A’、B-B’、C-C’的剖面圖。如圖5所示，閘極12包含複數條縱向配置的閘極線122，每一縱向配置的閘極線122包含複數向基板右側延伸的閘極凸出部121，資料電極13包含複數條縱向配置的資料線132，每一縱向配置的資料線132包含複數向基板左側延伸的資料電極凸出部131，每一發射器設置區14位於每一組對向延伸的閘極凸出部121與資料電極凸出部131的重疊區域內。閘極驅動單元15輸出驅動電壓Vg，用以驅動閘極12，且閘極驅動單元15置放於基板11之第一側(左側)。其中，發射器設置區14位於閘極12向基板之第二側(右側)延伸的閘極凸出部121與資料電極13向基板之第一側(左側)延伸的資料電極凸出部131的重疊區域內。又如圖6(A)-6(C)剖面圖所示，發射器設置區14位於資料電極13上方，並包含第一設置區141與第二設置區142，第一設置區141位於較靠近閘極驅動單元15之一側，而第二設置區142位於遠離閘極驅動單元15之另一側，且第一設置區141的面積小於第二設置區142的面積，而第一設置區141與該第二設置區142係以資料電極凸出部131的中央線L為界。甚至，第一設置區141的面積可以為零，亦即，發射器17可僅設置於發射器設置區14的第二設置區142。此實施例仍可達到改善場發射顯示器亮度不均勻的缺點，理由同第一實施例中所述，此處不再重述。Fig. 5 and Fig. 6(A)-6(C) illustrate a second embodiment of the present invention. Figure 5 is a top view. 6(A), 6(B) and 6(C) are cross-sectional views showing A-A', B-B', and C-C' in Fig. 5, respectively. As shown in FIG. 5, the gate 12 includes a plurality of longitudinally disposed gate lines 122. Each of the longitudinally disposed gate lines 122 includes a plurality of gate protrusions 121 extending to the right side of the substrate, and the data electrodes 13 include a plurality of longitudinal electrodes. The data line 132 is disposed, and each of the longitudinally disposed data lines 132 includes a plurality of data electrode protrusions 131 extending to the left side of the substrate, and each of the emitter setting areas 14 is located at each of the oppositely extending gate protrusions 121 and The data electrode projections 131 are in the overlapping region. The gate driving unit 15 outputs a driving voltage Vg for driving the gate 12, and the gate driving unit 15 is placed on the first side (left side) of the substrate 11. The emitter setting region 14 is located at the gate protruding portion 121 of the gate 12 extending toward the second side (right side) of the substrate and the data electrode protruding portion 131 of the data electrode 13 extending toward the first side (left side) of the substrate. Within the overlapping area. As shown in the cross-sectional view of FIG. 6(A)-6(C), the emitter setting area 14 is located above the data electrode 13, and includes a first setting area 141 and a second setting area 142, and the first setting area 141 is located closer. One side of the gate driving unit 15 and the second setting area 142 are located away from the other side of the gate driving unit 15, and the area of the first setting area 141 is smaller than the area of the second setting area 142, and the first setting area 141 The second installation area 142 is bounded by the center line L of the data electrode projection 131. Even, the area of the first setting area 141 may be zero, that is, the emitter 17 may be disposed only in the second setting area 142 of the emitter setting area 14. This embodiment can still achieve the disadvantage of improving the brightness unevenness of the field emission display, the reason is the same as that described in the first embodiment, and will not be repeated here.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
1,11,51．．．基板1,11,51. . . Substrate
2,12,52．．．閘極2,12,52. . . Gate
3,13,53．．．資料電極3,13,53. . . Data electrode
4,14,54．．．發射器設置區4,14,54. . . Transmitter setting area
5,15,55．．．閘極驅動單元5,15,55. . . Gate drive unit
6．．．第二金屬層6. . . Second metal layer
7,17,57．．．發射器7,17,57. . . launcher
8．．．閘極金屬層8. . . Gate metal layer
9．．．阻抗層9. . . Impedance layer
10．．．第一絕緣層10. . . First insulating layer
21,121．．．閘極突出部21,121. . . Gate protrusion
22,122．．．縱向配置的閘極線22,122. . . Longitudinal configuration of gate lines
31,131．．．資料電極突出部31,131. . . Data electrode protrusion
32,132．．．縱向配置的資料線32,132. . . Vertically configured data line
41,141．．．第一設置區41,141. . . First setting area
42,142．．．第二設置區42,142. . . Second setting area
L．．．資料電極突出部中央線L. . . Data electrode protrusion central line
Vg．．．閘極電壓Vg. . . Gate voltage
圖1繪示為習知場發射器顯示器基板之上視圖。1 is a top view of a conventional field emitter display substrate.
圖2繪示為本發明第一實施例之場發射器顯示器基板上視圖。2 is a top view of a field emitter display substrate according to a first embodiment of the present invention.
圖3(A)繪示為圖2中A-A’之剖面圖。Fig. 3(A) is a cross-sectional view taken along line A-A' of Fig. 2.
圖3(B)繪示為圖2中B-B’之剖面圖。Fig. 3(B) is a cross-sectional view taken along line B-B' in Fig. 2.
圖3(C)繪示為圖2中C-C’之剖面圖。Fig. 3(C) is a cross-sectional view taken along line C-C' of Fig. 2.
圖4繪示為圖2中A-A’之另一剖面圖。Fig. 4 is a cross-sectional view showing another A-A' of Fig. 2.
圖5繪示為本發明第二實施例之場發射器顯示器基板上視圖。FIG. 5 is a top view of a field emitter display substrate according to a second embodiment of the present invention.
圖6(A)繪示為圖5中A-A’之剖面圖。Fig. 6(A) is a cross-sectional view taken along line A-A' of Fig. 5.
圖6(B)繪示為圖5中B-B’之剖面圖。Fig. 6(B) is a cross-sectional view taken along line B-B' in Fig. 5.
圖6(C)繪示為圖5中C-C’之剖面圖。Fig. 6(C) is a cross-sectional view taken along line C-C' in Fig. 5.
1．．．基板1. . . Substrate
2．．．閘極2. . . Gate
3．．．資料電極3. . . Data electrode
4．．．發射器設置區4. . . Transmitter setting area
5．．．閘極驅動單元5. . . Gate drive unit
21．．．閘極凸出部twenty one. . . Gate bulge
22．．．縱向配置的閘極線twenty two. . . Longitudinal configuration of gate lines
31．．．資料電極凸出部31. . . Data electrode projection
32．．．縱向配置的資料線32. . . Vertically configured data line
Vg．．．閘極電壓Vg. . . Gate voltage
Claims (8)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100144483A TWI442439B (en) | 2011-12-02 | 2011-12-02 | Field emission display |
| CN201210067516.9A CN102543037B (en) | 2011-12-02 | 2012-03-13 | Field emission display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100144483A TWI442439B (en) | 2011-12-02 | 2011-12-02 | Field emission display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201324570A true TW201324570A (en) | 2013-06-16 |
| TWI442439B TWI442439B (en) | 2014-06-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW100144483A TWI442439B (en) | 2011-12-02 | 2011-12-02 | Field emission display |
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| CN (1) | CN102543037B (en) |
| TW (1) | TWI442439B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI460700B (en) * | 2012-05-07 | 2014-11-11 | Novatek Microelectronics Corp | Display driving apparatus and method for driving display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106896607A (en) * | 2017-04-27 | 2017-06-27 | 武汉华星光电技术有限公司 | A kind of array base palte and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006059548A (en) * | 2004-08-17 | 2006-03-02 | Hitachi Ltd | Display substrate |
| KR20060104658A (en) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | Electron emission device |
| JP2007311329A (en) * | 2006-05-19 | 2007-11-29 | Samsung Sdi Co Ltd | Light emission device, method of manufacturing electron emission unit therefor, and display device |
| KR100804704B1 (en) * | 2006-10-23 | 2008-02-18 | 삼성에스디아이 주식회사 | Light emission device and display |
| KR100913179B1 (en) * | 2008-01-09 | 2009-08-20 | 삼성에스디아이 주식회사 | Light emission device and display device using the light emission device as light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI460700B (en) * | 2012-05-07 | 2014-11-11 | Novatek Microelectronics Corp | Display driving apparatus and method for driving display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102543037A (en) | 2012-07-04 |
| TWI442439B (en) | 2014-06-21 |
| CN102543037B (en) | 2014-05-07 |
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