TW201323766A - Reflective coating for a light emitting device mount - Google Patents

Reflective coating for a light emitting device mount Download PDF

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TW201323766A
TW201323766A TW101133538A TW101133538A TW201323766A TW 201323766 A TW201323766 A TW 201323766A TW 101133538 A TW101133538 A TW 101133538A TW 101133538 A TW101133538 A TW 101133538A TW 201323766 A TW201323766 A TW 201323766A
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Taiwan
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lens
light emitting
disposed
pedestal
devices
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TW101133538A
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Chinese (zh)
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Frederic Stephane Diana
Brendan Jude Moran
Jeffrey Dellert Kmetec
Stefan Eberle
Mira Misra
Kuochou Tai
Werner Karl Goetz
Mikhail Fouksman
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Koninkl Philips Electronics Nv
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Publication of TW201323766A publication Critical patent/TW201323766A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

A method according to embodiments of the invention includes disposing on a secondary mount a plurality of light emitting devices. Each light emitting device includes a light emitting diode disposed on a primary mount. A reflective material is disposed on a surface of the secondary mount between the light emitting devices. After disposing the plurality of light emitting devices on a secondary mount, a lens is disposed over at least one of the light emitting devices.

Description

用於發光裝置基座之反射塗佈 Reflective coating for the illuminator base

本發明係關於一種用於其上安裝一發光裝置之一基座之反射塗佈。 The present invention relates to a reflective coating for a susceptor on which a illuminating device is mounted.

半導體發光裝置(包含發光二極體(LED)、諧振腔發光二極體(RCLED)、諸如表面發射型雷射及邊緣發射型雷射之垂直腔雷射二極體(VCSEL))屬於當前可用之最有效光源。在能夠跨越可見光譜操作的高亮度發光裝置之製造中當前所關注之材料系統包含III-V族半導體，尤其係鎵、鋁、銦及氮之二元、三元及四元合金(亦稱為III族氮化物材料)。通常，藉由以下操作來製作III族氮化物發光裝置：藉由金屬有機物化學汽相沈積(MOCVD)、分子束磊晶(MBE)或其他磊晶技術在一藍寶石、碳化矽、III族氮化物或其他適合基板上磊晶生長不同組合物及摻雜劑濃度之一半導體層堆疊。該堆疊通常包含形成於基板上方摻雜有(舉例而言)Si之一或多個n型層、在形成於該(等)n型層上方之一作用區域中之一或多個發光層及形成於該作用區域上方摻雜有(舉例而言)Mg之一或多個p型層。在該等n型及p型區域上形成電觸點。 Semiconductor light-emitting devices (including light-emitting diodes (LEDs), resonant cavity light-emitting diodes (RCLEDs), vertical cavity laser diodes (VCSELs) such as surface-emitting lasers and edge-emitting lasers) are currently available The most effective light source. The material systems currently of interest in the fabrication of high-intensity illumination devices capable of operating across the visible spectrum comprise III-V semiconductors, especially binary, ternary and quaternary alloys of gallium, aluminum, indium and nitrogen (also known as Group III nitride material). Generally, a group III nitride light-emitting device is fabricated by metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or other epitaxial techniques in a sapphire, tantalum carbide, or group III nitride. Or other suitable stacking of semiconductor layers on a substrate for epitaxial growth of different compositions and dopant concentrations. The stack generally includes one or more light-emitting layers formed on the substrate with one or more n-type layers, for example, Si, and one of the active regions formed over the n-type layer. Formed above the active region is doped with, for example, one or more p-type layers of Mg. Electrical contacts are formed on the n-type and p-type regions.

圖1圖解說明安裝於一子基座上之三個LED，其更詳細地闡述於US 2011/0012149中。為了形成圖6中所圖解說明之裝置，在一生長基板上形成習用LED 10A、10B、10C，然後對其進行單粒化並將其安裝於一子基座晶圓22上。製 備一反射底填充材料。舉例而言，將TiO2之粒子(在白色光下顯現為白色)或諸如ZrO2之其他反射粒子添加至適合於底填充之一聚矽氧模製化合物。然後，舉例而言，藉由注入模製形成用於每一LED之一底填充及反射層54。冷卻模具以使底填充材料固化。然後將該模具自晶圓22移除，從而留下硬化之底填充材料54囊封每一LED且在每一LED之間的晶圓22表面上。舉例而言，藉由用高速微珠噴吹晶圓22之整個表面來移除每一LED之生長基板上方之過量底填充材料54，然後移除每一LED之生長基板。可在每一LED上方模製磷光體層62A、62B及62C，從而產生圖1中所圖解說明之結構。然後，單粒化子基座晶圓22以形成個別LED/子基座。 Figure 1 illustrates three LEDs mounted on a submount, which is described in more detail in US 2011/0012149. To form the device illustrated in Figure 6, conventional LEDs 10A, 10B, 10C are formed on a growth substrate, which is then singulated and mounted on a submount wafer 22. A reflective underfill material is prepared. For example, particles of TiO 2 (appearing white under white light) or other reflective particles such as ZrO 2 are added to one of the polyoxyl molding compounds suitable for underfill. Then, for example, an underfill and reflective layer 54 for each of the LEDs is formed by injection molding. The mold is cooled to cure the underfill material. The mold is then removed from wafer 22 leaving a hardened underfill material 54 to encapsulate each LED and on the surface of wafer 22 between each LED. For example, excess underfill material 54 over the growth substrate of each LED is removed by blowing the entire surface of wafer 22 with high speed microbeads, and then the growth substrate of each LED is removed. Phosphor layers 62A, 62B, and 62C can be molded over each LED to produce the structure illustrated in FIG. The submount wafers 22 are then singulated to form individual LED/submounts.

本發明之一目標係在一發光裝置基座上提供一反射塗佈。 One object of the present invention is to provide a reflective coating on a luminaire base.

一種根據本發明之實施例之方法包含在一次基座上安置複數個發光裝置。每一發光裝置包含安置於一主基座上之一發光二極體。在該等發光裝置之間的該次基座之一表面上安置一反射材料。在於一次基座上安置該複數個發光裝置之後，在該等發光裝置中之至少一者上方安置一透鏡。 A method in accordance with an embodiment of the present invention includes placing a plurality of illumination devices on a primary pedestal. Each of the light emitting devices includes one of the light emitting diodes disposed on a main base. A reflective material is disposed on a surface of one of the submounts between the illumination devices. After the plurality of illumination devices are disposed on the primary pedestal, a lens is disposed over at least one of the illumination devices.

一種根據本發明之實施例之結構包含附著至一次基座之一發光裝置。該發光裝置包含安置於一主基座上之一III族氮化物發光二極體。一反射材料安置於該次基座上在毗鄰該發光裝置之一區中。 A structure in accordance with an embodiment of the present invention includes a light emitting device attached to a primary pedestal. The illuminating device comprises a group III nitride light emitting diode disposed on a main pedestal. A reflective material is disposed on the submount in a region adjacent to the illumination device.

本發明之實施例可藉由減少傳至一次基座上之低反射率表面之光之量而改良來自安置於一主基座及該次基座上之一發光裝置之光輸出。 Embodiments of the present invention can improve light output from a light emitting device disposed on a primary pedestal and the secondary pedestal by reducing the amount of light that is transmitted to the low reflectivity surface on the primary pedestal.

在本發明之實施例中，使一次基座上之發光裝置之間的區係反射性以減少光損失。儘管在下文實例中半導體發光裝置係發射藍色光或UV光之III族氮化物LED，但可使用除LED之外的諸如雷射二極體之半導體發光裝置及由諸如其他III-V族材料、III族磷化物、III族砷化物、II-VI族材料、ZnO或基於Si之材料之其他材料系統製成之半導體發光裝置。 In an embodiment of the invention, the fading between the illumination devices on the primary pedestal is made reflective to reduce light loss. Although the semiconductor light emitting device emits a group III nitride LED of blue light or UV light in the following examples, a semiconductor light emitting device such as a laser diode other than the LED may be used and made of materials such as other III-V materials, A semiconductor light-emitting device made of a Group III phosphide, a Group III arsenide, a Group II-VI material, ZnO or a Si-based material.

圖2圖解說明包含安置於一主基座12上之諸如一LED之半導體發光裝置10之一裝置15。為了形成圖2中所圖解說明之結構，在一生長基板上生長一半導體結構。該生長基板可係例如藍寶石、SiC、Si、GaN或複合基板之任何適合基板。該半導體結構包含夾在n型區域與p型區域之間的一發光區域或作用區域。可首先生長一n型區域且其可包含不同組合物及摻雜劑濃度之多個層，舉例而言，包含諸如緩衝層或成核層之製備層及/或經設計以促進生長基板之移除之層(其可係n型或未經有意摻雜)，及針對為使發光區域有效地發射光而期望之特定光學、材料或電性質設計之n型或甚至p型裝置層。在該n型區域上方生長一發光區域或作用區域。適合發光區域之實例包含一單個厚或薄發光層或一多量子井發光區域，該多量子井發光區域包含由障 壁層分離之多個薄或厚發光層。然後，可在發光區域上方生長一p型區域。如n型區域一樣，該p型區域可包含不同組合物、厚度及摻雜劑濃度之多個層，包含未經有意摻雜之層或n型層。該裝置中之所有半導體材料之總厚度在某些實施例中小於10 μm且在某些實施例中小於6 μm。在某些實施例中，視情況，可在生長之後在200℃與800℃之間將該半導體材料退火。 2 illustrates a device 15 including a semiconductor light emitting device 10, such as an LED, disposed on a main susceptor 12. To form the structure illustrated in Figure 2, a semiconductor structure is grown on a growth substrate. The growth substrate can be any suitable substrate such as sapphire, SiC, Si, GaN or a composite substrate. The semiconductor structure includes a light emitting region or active region sandwiched between the n-type region and the p-type region. An n-type region may be grown first and may comprise multiple layers of different compositions and dopant concentrations, for example, including a preparation layer such as a buffer layer or a nucleation layer and/or designed to facilitate growth of the substrate. In addition to the layer (which may be n-type or unintentionally doped), and an n-type or even p-type device layer designed for the particular optical, material or electrical properties desired to enable the illuminating region to effectively emit light. A light emitting region or an active region is grown over the n-type region. Examples of suitable light-emitting regions include a single thick or thin luminescent layer or a multi-quantum well illuminating region containing a barrier A plurality of thin or thick luminescent layers separated by a wall layer. Then, a p-type region can be grown over the light-emitting region. Like the n-type region, the p-type region can comprise multiple layers of different compositions, thicknesses, and dopant concentrations, including layers that are not intentionally doped or n-type layers. The total thickness of all of the semiconductor materials in the device is less than 10 μm in some embodiments and less than 6 μm in certain embodiments. In certain embodiments, the semiconductor material can be annealed between 200 ° C and 800 ° C after growth, as appropriate.

在該p型區域上形成一金屬p觸點。若大多數光穿過與該p觸點相對之一表面被引導出該半導體結構(諸如在一覆晶裝置中)，則該p觸點可係反射性。可藉由以下操作來形成一垂直裝置：藉由(舉例而言)熱超音波接合將該半導體結構附著至主基座12，移除生長基板且在藉由移除該生長基板而展露之半導體結構之表面上形成一金屬n觸點。可藉由以下操作來形成一覆晶裝置：藉由標準光微影操作及蝕刻來圖案化該半導體結構以移除p型區域之整個厚度及發光區域之整個厚度之一部分以展露其上形成一金屬n觸點之n型區域之一表面。可藉由絕緣層及金屬之一堆疊來重分佈p觸點及n觸點。可在n觸點及p觸點上形成金屬接合層。然後，舉例而言，藉由焊接、熱超音波接合(舉例而言，藉助金互連件)或任何其他適合接合技術將LED 10附著至主基座12。該等接合層或一額外底填充層可在移除生長基板之全部或部分期間支撐該半導體結構，或該生長基板可仍保持為最終裝置之部分。 A metal p-contact is formed on the p-type region. The p-contact can be reflective if most of the light is directed out of the semiconductor structure (such as in a flip-chip device) through a surface opposite the p-contact. A vertical device can be formed by attaching the semiconductor structure to the main susceptor 12 by, for example, thermal ultrasonic bonding, removing the growth substrate, and exposing the semiconductor by removing the growth substrate A metal n-contact is formed on the surface of the structure. A flip chip device can be formed by patterning the semiconductor structure by standard photolithography operation and etching to remove the entire thickness of the p-type region and a portion of the entire thickness of the light-emitting region to reveal a portion thereof One of the n-type regions of the metal n-contact. The p-contact and the n-contact can be redistributed by stacking one of the insulating layer and the metal. A metal bonding layer can be formed on the n-contact and the p-contact. The LED 10 is then attached to the main pedestal 12, for example, by soldering, thermal ultrasonic bonding (for example, by means of a gold interconnect) or any other suitable bonding technique. The bonding layer or an additional underfill layer can support the semiconductor structure during removal of all or a portion of the growth substrate, or the growth substrate can remain as part of the final device.

可在將LED 10附著至主基座12之後於LED 10上方或在 將多個裝置安置於一次基座上之後於多個LED上方形成諸如波長轉換層、濾光層、二向色層或光學器件之額外層，如下文所闡述。可在主基座12仍附著至主基座之一晶圓時將LED 10附著至主基座12。可使相鄰LED之間的主基座12之表面19係反射性，舉例而言，如上文參考圖1所闡述。 The LED 10 can be attached to the main pedestal 12 or above the LED 10 or Additional layers, such as wavelength converting layers, filter layers, dichroic layers, or optics, are formed over the plurality of LEDs after placement of the plurality of devices on the primary pedestal, as set forth below. The LED 10 can be attached to the main pedestal 12 while the main pedestal 12 is still attached to one of the main pedestals. The surface 19 of the main pedestal 12 between adjacent LEDs can be made reflective, for example, as explained above with reference to FIG.

主基座12可係具有高熱導率之一材料，諸如陶瓷或銅。與其他子基座材料(例如，矽)相比，此等材料可係昂貴的。在昂貴材料之情形下，可使主基座12儘可能小。 The main pedestal 12 can be a material having a high thermal conductivity such as ceramic or copper. Such materials can be expensive compared to other submount materials (eg, tantalum). In the case of expensive materials, the main base 12 can be made as small as possible.

可將多個裝置15封裝於一單個次基座上，舉例而言，以一線性或二維陣列。如本文中所使用，「裝置15」或「發光裝置15」指代圖2中所圖解說明之結構。圖3圖解說明三個圖2中所圖解說明之裝置15附著至一次基座14。可(舉例而言)藉由焊接將裝置15附著至次基座14。次基座14可係(舉例而言)一印刷電路板或一矽基座。次基座14提供對裝置15之機械支撐、熱耗散及電連接。特定而言，在其中圖2之主基座12之面積有限之情形中，如上文所闡述，次基座14上裝置15之間的區域16可係光損失之一顯著來源。 The plurality of devices 15 can be packaged on a single submount, for example, in a linear or two dimensional array. As used herein, "device 15" or "lighting device 15" refers to the structure illustrated in FIG. FIG. 3 illustrates the attachment of the three devices illustrated in FIG. 2 to the primary pedestal 14. The device 15 can be attached to the submount 14 by welding, for example. Sub-base 14 can be, for example, a printed circuit board or a pedestal. Sub-base 14 provides mechanical support, heat dissipation, and electrical connection to device 15. In particular, in the case where the area of the main pedestal 12 of FIG. 2 is limited, as explained above, the area 16 between the devices 15 on the sub-base 14 can be a significant source of light loss.

圖4至圖6圖解說明根據本發明之實施例在次基座14上形成一反射表面。在圖4中，在裝置15及次基座14上方安置在一入射角範圍內及/或在一波長範圍內係高反射性之一材料18，以使得材料18填充裝置15之間的空間16。反射材料18可係(舉例而言)一基於TiO2或VO2之白色塗佈或安置於聚矽氧中之白色顏料。可將其他材料添加至該混合物以最佳化該材料之熱機械性質。在某些實施例中，反射材料 18之塗佈係一電絕緣體。在某些實施例中，反射材料18之塗佈保護次基座14免受環境腐蝕、來自裝置15之熱量及來自裝置15之藍色光或UV光之影響。特定而言，該塗佈可形成為對次基座14上之金屬層之腐蝕之一障壁。可藉由包含噴射、絲網印刷、噴塗或具有蒸發步驟之一光微影程序之任何適合技術來形成反射材料18之一塗佈。將反射材料18之塗佈形成為足夠厚以覆蓋裝置15之間的次基座14之低反射率表面。 4 through 6 illustrate the formation of a reflective surface on the submount 14 in accordance with an embodiment of the present invention. In FIG. 4, a material 18 that is highly reflective over a range of incident angles and/or within a range of wavelengths is placed over device 15 and sub-base 14 such that material 18 fills space 16 between devices 15 . The reflective material 18 can be, for example, a white pigment based on TiO 2 or VO 2 or a white pigment disposed in polyfluorene. Other materials may be added to the mixture to optimize the thermomechanical properties of the material. In some embodiments, the coating of reflective material 18 is an electrical insulator. In some embodiments, the coating of reflective material 18 protects submount 14 from environmental corrosion, heat from device 15 and blue or UV light from device 15. In particular, the coating can be formed as a barrier to corrosion of the metal layer on the submount 14 . Coating of one of the reflective materials 18 can be accomplished by any suitable technique including jetting, screen printing, spraying, or a photolithography procedure having one of the evaporation steps. The coating of the reflective material 18 is formed to be thick enough to cover the low reflectivity surface of the submount 14 between the devices 15.

在圖5中所圖解說明之一選用步驟中，移除過量反射材料，從而曝露裝置15之頂部22以允許光自裝置15逸出，留下裝置15之間的反射材料18。亦可將過量反射材料自次基座14之邊緣20移除，舉例而言，以允許至此表面之電連接性。在某些實施例中，反射材料之塗佈係具有開口(如需要)之適當大小之一預成型板或經沈積以使得不必將過量反射材料自裝置15之頂部移除。 In one of the alternative steps illustrated in Figure 5, the excess reflective material is removed to expose the top 22 of the device 15 to allow light to escape from the device 15, leaving the reflective material 18 between the devices 15. Excessive reflective material can also be removed from the edge 20 of the submount 14 to, for example, allow electrical connectivity to the surface. In certain embodiments, the coating of the reflective material has one of the appropriate sizes of openings (if desired) of the preformed sheet or is deposited such that excess reflective material does not have to be removed from the top of the device 15.

圖6圖解說明在於每一發光裝置15上方形成圓頂透鏡24之後的圖5之結構。可藉由任何適合技術在裝置15上方形成及安置透鏡24。在某些實施例中，透鏡24係膠合或黏附至裝置15及/或次基座14或以其他方式安置於裝置15上方之預成型透鏡。另一選擇係，可在一低壓外模製程序中形成透鏡24，如下：提供具有對應於次基座14上之裝置15之位置之缺口之一模具。用在固化時形成一硬化之透鏡材料之一液體光學透明材料(諸如聚矽氧)填充該等缺口。該等缺口之形狀將係透鏡之形狀。將模具及LED晶粒/支撐結構 組合在一起以使得每一LED晶粒駐存於一相關聯缺口中之液體透鏡材料內。然後，加熱該模具以使透鏡材料固化(硬化)。然後，分離該模具與該支撐結構，從而留下每一LED晶粒上方之一透鏡。另一選擇係，可藉由高壓注入模製形成透鏡24，其中在使一空模具圍繞待囊封之物件包封之後在高壓下注入液體材料。在圖6中，在每一發光裝置15上方形成一單個透鏡，但預期一單個裝置上方之多個透鏡且其在本發明之範疇內。 FIG. 6 illustrates the structure of FIG. 5 after the dome lens 24 is formed over each of the illumination devices 15. The lens 24 can be formed and placed over the device 15 by any suitable technique. In some embodiments, the lens 24 is glued or adhered to the device 15 and/or the secondary base 14 or a preformed lens that is otherwise disposed over the device 15. Alternatively, the lens 24 can be formed in a low pressure overmolding process, as follows: A mold having a notch corresponding to the location of the device 15 on the submount 14 is provided. The gaps are filled with a liquid optically transparent material (such as polyfluorene oxide) which forms a hardened lens material upon curing. The shape of the notches will be the shape of the lens. Mold and LED die/support structure They are combined such that each LED die resides within the liquid lens material in an associated gap. The mold is then heated to cure (harden) the lens material. The mold and the support structure are then separated, leaving one of the lenses above each of the LED dies. Alternatively, the lens 24 can be formed by high pressure injection molding in which a liquid material is injected under high pressure after encapsulating an empty mold around the article to be encapsulated. In Figure 6, a single lens is formed over each of the illumination devices 15, but a plurality of lenses above a single device are contemplated and are within the scope of the present invention.

圖7圖解說明形成於多個發光裝置15上方之一單個透鏡26。可藉助上文針對圖6之透鏡24所闡述之相同技術來形成透鏡26。與圖6相比，在圖7中裝置15可更緊密地間隔開，但其無需如此。 FIG. 7 illustrates a single lens 26 formed over a plurality of illumination devices 15. Lens 26 can be formed by the same techniques as explained above for lens 24 of FIG. In contrast to Figure 6, the devices 15 can be more closely spaced apart in Figure 7, but this need not be the case.

圖6之透鏡24及圖7之透鏡26兩者可係具有一高折射率(舉例而言，在某些實施例中大於1.5且在某些實施例中大於2)之一光學組件。在某些實施例中，圖6之透鏡24或圖7之透鏡26可係任何適合形狀，諸如所圖解說明之圓頂透鏡、半圓頂透鏡或菲涅耳透鏡。在某些實施例中，可在圖6之透鏡24或圖7之透鏡26內安置諸如磷光體之波長轉換材料、散射結構或材料或者其他材料。可在施加透鏡之前於裝置上方或者在圖6之透鏡24或圖7之透鏡26上方安置波長轉換材料、諸如濾光器之光學塗佈或其他材料。在某些實施例中，不在發光裝置15上方形成透鏡。 Both lens 24 of Figure 6 and lens 26 of Figure 7 can have one optical component having a high refractive index (e.g., in some embodiments greater than 1.5 and in some embodiments greater than 2). In certain embodiments, the lens 24 of FIG. 6 or the lens 26 of FIG. 7 can be any suitable shape, such as the illustrated dome lens, semi-domenna lens, or Fresnel lens. In certain embodiments, a wavelength converting material such as a phosphor, a scattering structure or material, or other material may be disposed within lens 24 of FIG. 6 or lens 26 of FIG. A wavelength converting material, optical coating such as a filter, or other material may be placed over the device prior to application of the lens or over lens 26 of Figure 6 or lens 26 of Figure 7. In some embodiments, a lens is not formed over the illumination device 15.

儘管圖3、圖4、圖5、圖6及圖7圖解說明一次基座14上之多個裝置15，但本發明之實施例可適用於一單個裝置 15，如圖8中所圖解說明。在一次基座14上安置一單個裝置15。可在次基座14上圍繞裝置15安置一選用框架30，或另一選擇係，可在次基座14中形成一選用反射體杯。在某些實施例中，框架30或一反射體杯之側壁可係反射性。圍繞裝置15安置反射材料18之一塗佈，如上文所闡述。可藉由上文參考圖6所闡述之技術中之任一者在裝置15上方安置一透鏡28。 Although Figures 3, 4, 5, 6, and 7 illustrate a plurality of devices 15 on the primary pedestal 14, embodiments of the present invention are applicable to a single device. 15, as illustrated in Figure 8. A single device 15 is placed on the primary base 14. An optional frame 30 can be placed around the device 15 on the secondary base 14, or another selection system can be used to form an optional reflector cup in the secondary base 14. In some embodiments, the side walls of the frame 30 or a reflector cup can be reflective. One of the reflective materials 18 is placed around the device 15 as described above. A lens 28 can be placed over the device 15 by any of the techniques set forth above with reference to FIG.

儘管已詳細闡述本發明，但熟習此項技術者將瞭解，在給出本發明之情況下，可對本發明進行修改而不背離本文中所闡述本發明概念之精神。舉例而言，可組合不同實施例之不同元素以形成新實施例。因此，並非意欲將本發明之範疇限制於所圖解說明及闡述之特定實施例。 Although the present invention has been described in detail, those skilled in the art will understand that the invention may be modified without departing from the spirit of the inventive concept set forth herein. For example, different elements of different embodiments may be combined to form a new embodiment. Therefore, the scope of the invention is not intended to be limited to the specific embodiments illustrated and described.

10‧‧‧半導體發光裝置/發光二極體 10‧‧‧Semiconductor light-emitting device / light-emitting diode

10A‧‧‧發光二極體 10A‧‧‧Light Emitting Body

10B‧‧‧發光二極體 10B‧‧‧Lighting diode

10C‧‧‧發光二極體 10C‧‧‧Lighting diode

12‧‧‧主基座 12‧‧‧Main base

14‧‧‧次基座 14 ‧ ‧ pedestal

15‧‧‧裝置/發光裝置 15‧‧‧Device/lighting device

16‧‧‧區域/空間 16‧‧‧Region/Space

18‧‧‧材料/反射材料 18‧‧‧Material/Reflective Materials

19‧‧‧表面 19‧‧‧ Surface

20‧‧‧邊緣 20‧‧‧ edge

22‧‧‧子基座晶圓/晶圓/頂部 22‧‧‧Sub-substrate wafer/wafer/top

24‧‧‧圓頂透鏡/透鏡 24‧‧‧dome lens/lens

26‧‧‧單個透鏡/透鏡 26‧‧‧Single lens/lens

28‧‧‧透鏡 28‧‧‧ lens

30‧‧‧框架 30‧‧‧Frame

54‧‧‧底填充層/反射層/底填充材料 54‧‧‧Underfill/reflective layer/underfill material

62A‧‧‧磷光體層 62A‧‧‧phosphor layer

62B‧‧‧磷光體層 62B‧‧‧phosphor layer

62C‧‧‧磷光體層 62C‧‧‧phosphor layer

圖1圖解說明安裝於一先前技術子基座晶圓上之三個LED，其中一反射層安置於該等LED之間。 Figure 1 illustrates three LEDs mounted on a prior art submount wafer with a reflective layer disposed between the LEDs.

圖2圖解說明包含安置於一主基座上之一半導體LED之一結構。 Figure 2 illustrates a structure comprising one of the semiconductor LEDs disposed on a main pedestal.

圖3圖解說明各自包含安置於一主基座上、安置於一次基座上之一半導體LED之三個裝置。 Figure 3 illustrates three devices each comprising a semiconductor LED disposed on a primary pedestal disposed on a primary pedestal.

圖4圖解說明在形成一反射塗佈之後的圖3之結構。 Figure 4 illustrates the structure of Figure 3 after forming a reflective coating.

圖5圖解說明在將過量反射材料自發光裝置之頂部及次基座之側移除之後的圖4之結構。 Figure 5 illustrates the structure of Figure 4 after removal of excess reflective material from the top of the illumination device and the side of the submount.

圖6圖解說明在每一發光裝置上方形成透鏡之後的圖5之結構。 Figure 6 illustrates the structure of Figure 5 after forming a lens over each of the illumination devices.

圖7圖解說明具有三個發光裝置及一單個透鏡之一次基座。 Figure 7 illustrates a primary pedestal having three illumination devices and a single lens.

圖8圖解說明安置至具有一框架之一次基座之一發光裝置。 Figure 8 illustrates one of the illumination devices disposed to a primary pedestal having a frame.

14‧‧‧次基座 14 ‧ ‧ pedestal

15‧‧‧裝置/發光裝置 15‧‧‧Device/lighting device

18‧‧‧材料/反射材料 18‧‧‧Material/Reflective Materials

28‧‧‧透鏡 28‧‧‧ lens

30‧‧‧框架 30‧‧‧Frame

Claims (16)

一種方法，其包括：在一次基座上安置複數個發光裝置，每一發光裝置包括安置於一主基座上之發光二極體；在該等發光裝置之間的該次基座之一表面上安置一反射材料；及在於一次基座上安置該複數個發光裝置之後，在該等發光裝置中之至少一者上方安置一透鏡。 A method comprising: arranging a plurality of light emitting devices on a primary pedestal, each illuminating device comprising a light emitting diode disposed on a main pedestal; and a surface of the submount between the illuminating devices A reflective material is disposed thereon; and after the plurality of light emitting devices are disposed on the primary pedestal, a lens is disposed over at least one of the illuminating devices. 如請求項1之方法，其中每一主基座包括一陶瓷基座。 The method of claim 1, wherein each of the main bases comprises a ceramic base. 如請求項1之方法，其中每一發光二極體包括一III族氮化物發光層。 The method of claim 1, wherein each of the light emitting diodes comprises a group III nitride light emitting layer. 如請求項1之方法，其中安置一反射材料包括：形成包括一反射材料之一塗佈。 The method of claim 1, wherein the disposing a reflective material comprises: forming a coating comprising a reflective material. 如請求項4之方法，其中該塗佈包括安置於聚矽氧中之一白色材料。 The method of claim 4, wherein the coating comprises a white material disposed in the polyoxo. 如請求項4之方法，其中藉由噴射、絲網印刷、噴塗或蒸發中之一者形成該塗佈。 The method of claim 4, wherein the coating is formed by one of spraying, screen printing, spraying or evaporating. 如請求項1之方法，其中在每一發光裝置上方安置一透鏡。 The method of claim 1, wherein a lens is disposed above each of the illumination devices. 如請求項1之方法，其中在多個發光裝置上方安置一單個透鏡。 The method of claim 1, wherein a single lens is disposed over the plurality of illumination devices. 如請求項1之方法，其中該次基座係一PC板。 The method of claim 1, wherein the secondary base is a PC board. 如請求項1之方法，其中安置一透鏡包括：使一模具與該至少一個發光裝置對準； 用液體透鏡材料填充該模具；處理該液體透鏡材料以形成一固體透鏡；及移除該模具。 The method of claim 1, wherein placing a lens comprises: aligning a mold with the at least one light emitting device; Filling the mold with a liquid lens material; treating the liquid lens material to form a solid lens; and removing the mold. 一種結構，其包括：一發光裝置，其包括安置於一主基座上之一III族氮化物發光二極體；一次基座，其中該發光裝置附著至該次基座；及一反射材料，其在毗鄰該發光裝置之一區中安置於該次基座上。 A structure comprising: a light emitting device comprising a group III nitride light emitting diode disposed on a main pedestal; a primary pedestal, wherein the illuminating device is attached to the submount; and a reflective material, It is disposed on the submount in a region adjacent to the illumination device. 如請求項11之結構，其中該發光裝置係一第一發光裝置，該結構進一步包括一第二發光裝置，該第二發光裝置包括安置於一主基座上之一III族氮化物發光二極體，其中：該第二發光裝置附著至該次基座；且該反射材料安置於該第一發光裝置與該第二發光裝置之間。 The structure of claim 11, wherein the illuminating device is a first illuminating device, the structure further comprising a second illuminating device, wherein the second illuminating device comprises a group III nitride emitting diode disposed on a main pedestal a body, wherein: the second illuminating device is attached to the sub pedestal; and the reflective material is disposed between the first illuminating device and the second illuminating device. 如請求項12之結構，其進一步包括安置於該第一發光裝置及該第二發光裝置上方之一透鏡。 The structure of claim 12, further comprising a lens disposed above the first illumination device and the second illumination device. 如請求項12之結構，其進一步包括安置於該第一發光裝置上方之一第一透鏡及安置於該第二發光裝置上方之一第二透鏡。 The structure of claim 12, further comprising a first lens disposed above the first illumination device and a second lens disposed above the second illumination device. 如請求項11之結構，其中該反射材料自該次基座之一邊緣縮進。 The structure of claim 11, wherein the reflective material is retracted from an edge of the submount. 如請求項11之結構，其進一步包括安置於該發光裝置上方之一透鏡。 The structure of claim 11, further comprising a lens disposed above the illumination device.
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