TW201319604A

TW201319604A - Methods and systems for MEMS CMOS devices including a multiwire compass

Info

Publication number: TW201319604A
Application number: TW101126864A
Authority: TW
Inventors: Josep Montanya Silvestre; Juan Jose Valle Fraga; Laura Barrachina Saralegui
Original assignee: Baolab Microsystems Sl
Priority date: 2011-07-25
Filing date: 2012-07-25
Publication date: 2013-05-16
Also published as: WO2013014321A3; WO2013014321A8; WO2013014321A2

Abstract

The systems and methods described provide for a magnetometer device that includes a resonating element having an inner wire enclosed in a shielding electrode. The shielding electrode decreases the effect of interference on the resonating element. A sensing electrode is disposed proximate to the resonating element. The device further includes a source for generating current that is connected to the resonating element. The current when applied through the inner wire causes a displacement of the resonating element. The magnetometer device measures a magnetic field of the resonating element as a capacitance variation between the shielding electrode and the sensing electrode. The systems and methods herein provide for an accelerometer device that includes a resonating element having an inner core of dielectric material enclosed in a shielding electrode. The accelerometer device measures an acceleration of the resonating element as a capacitance variation between the shielding electrode and the sensing electrode.

Description

用於包含一多導線羅盤之微機電互補式金氧半裝置之方法及系統 Method and system for MEMS complementary gold-oxygen half device comprising a multi-wire compass

此申請案主張於2011年7月25日提出申請之美國臨時專利申請案第61/511,324號、於2012年3月2日提出申請之美國臨時專利申請案第61/606,091號及於2012年5月14日提出申請之美國臨時專利申請案第61/646,664號之優先權，以上申請案皆以全文引用之方式併入本文中。 U.S. Provisional Patent Application No. 61/511,324, filed on July 25, 2011, and U.S. Provisional Patent Application No. 61/606,091, filed on March 2, 2012, and The priority of U.S. Provisional Patent Application Serial No. 61/646,664, filed on Jan. 14, the entire entire entire entire entire entire entire content

諸如磁力計及加速度計之運動感測器裝置通常嵌入當前電子設備中。在一項態樣中，此等裝置通常使用一基於微機電(MEMS)之製程製造且包含一錨定之實證質量塊。實證質量塊之任何移動觸發相對於一參考電極之一電容變化，且該變化經量測以判定目標向量，諸如一磁場或一加速度。 Motion sensor devices such as magnetometers and accelerometers are typically embedded in current electronic devices. In one aspect, such devices are typically fabricated using a microelectromechanical (MEMS) based process and include an anchored empirical mass. Any movement of the empirical mass triggers a change in capacitance relative to one of the reference electrodes, and the change is measured to determine a target vector, such as a magnetic field or an acceleration.

然而，錨定實證質量塊通常易受來自環境(諸如來自雜散電磁場或靜電場或其他此等效應)之干擾影響。干擾可影響具有實證質量塊之運動感測器裝置之敏感度且使其不適合用於高敏感度應用，例如，磁共振成像(MRI)。降低敏感度導致一較低信雜比(SNR)及可使得使用運動感測器裝置所進行之量測不準確。 However, anchoring empirical masses is often susceptible to interference from the environment, such as from stray electromagnetic fields or electrostatic fields or other such effects. Interference can affect the sensitivity of motion sensor devices with empirical masses and make them unsuitable for high sensitivity applications, such as magnetic resonance imaging (MRI). Reducing sensitivity results in a lower signal-to-noise ratio (SNR) and can result in inaccurate measurements made using motion sensor devices.

因此，需要一種最小程度地易受干擾影響且提供一高SNR之運動感測器裝置。 Therefore, there is a need for a motion sensor device that is minimally susceptible to interference and that provides a high SNR.

本文中所闡述之系統及方法藉由達成最小程度地易受干擾影響之一運動感測器裝置(基於MEMS、基於NEMS或基於CMOS(互補式金氧半)MEMS)之製造來解決先前技術中之缺陷。 The system and method described herein achieves one of the motion sensor devices (based on MEMS, NEMS-based, or base based on minimally susceptible to interference) The fabrication of CMOS (Complementary Metal Oxygen Half) MEMS) addresses the shortcomings of the prior art.

在其中待量測之一目標磁場大於地球之磁場(約60 μT)之一磁力計裝置之情形中，對磁力計裝置之敏感度之要求通常係低的。然而，若待量測之目標磁場係小的(例如，在地磁雜訊(約0.1 nT)附近或低於地磁雜訊)，則可要求一高敏感度磁力計裝置。在醫學及生物醫學應用(諸如MRI及分子加標)及無線電通信(諸如用於RF信號之一接收天線)中通常需要此等磁力計裝置。 In the case where one of the target magnetic fields to be measured is larger than one of the earth's magnetic fields (about 60 μT), the sensitivity to the magnetometer device is generally low. However, if the target magnetic field to be measured is small (for example, near geomagnetic noise (about 0.1 nT) or below geomagnetic noise), a high sensitivity magnetometer device may be required. Such magnetometer devices are commonly required in medical and biomedical applications, such as MRI and molecular spikes, and in radio communications, such as one of the receiving antennas for RF signals.

本文中所闡述之系統及方法提供一種包含具有包封於一屏蔽電極中之一內部導線之一共振元件之磁力計裝置。屏蔽電極可減少對共振元件之非所期望干擾效應且改良磁力計裝置之SNR。包封內部導線之屏蔽電極亦可允許較容易量測共振元件與一感測電極之間的電容變化。可相對於感測電極將一恆定電壓施加至屏蔽電極，以使得電容變化不受跨越內部導線之任何電壓降影響。在無屏蔽電極之情形中，因電流流動及內部導線之電阻產生之電壓降可引起一靜電力及/或一靜電干擾。此等可干擾電容變化且將誤差引入至一目標磁場之量測。 The systems and methods described herein provide a magnetometer device having a resonant element having an inner conductor encased in a shield electrode. The shield electrode can reduce undesirable interference effects on the resonant element and improve the SNR of the magnetometer device. The shield electrode encapsulating the inner conductor may also allow for easier measurement of the change in capacitance between the resonant element and a sense electrode. A constant voltage can be applied to the shield electrode relative to the sense electrode such that the change in capacitance is not affected by any voltage drop across the inner conductor. In the case of an unshielded electrode, a voltage drop due to current flow and resistance of the internal conductor can cause an electrostatic force and/or an electrostatic disturbance. These can interfere with capacitance changes and introduce errors into the measurement of a target magnetic field.

在一項態樣中，本文中所闡述之系統及方法提供用於一種磁力計裝置。一感測電極安置於該磁力計裝置內，且一共振元件鄰近於該感測電極安置。該共振元件包含圍繞一內部導線安置之一屏蔽電極。該裝置進一步包含用於產生電流之連接至該共振元件之一源。該電流當透過內部導線施加時導致共振元件垂直於磁場之一位移。該磁力計裝置量測該共振元件之一磁場以至該屏蔽電極與該感測電極之間的一電容變化。 In one aspect, the systems and methods described herein are provided for use with a magnetometer device. A sensing electrode is disposed within the magnetometer device and a resonant element is disposed adjacent to the sensing electrode. The resonant element includes a shield electrode disposed about an inner conductor. The device further includes a source for generating a current connection to the resonant element. This current is transmitted through the internal conductor When applied, the resonant element is displaced perpendicular to one of the magnetic fields. The magnetometer device measures a magnetic field of one of the resonant elements to a capacitance change between the shield electrode and the sensing electrode.

在某些實施例中，該裝置進一步包含鄰近於本發明共振元件安置之複數個共振元件，及鄰近於該等共振元件安置之複數個繞線導線。繞線導線電連接該等共振元件以使得同一電流穿過所有共振元件傳播。在某些實施例中，施加至共振元件之電流係週期性的。 In some embodiments, the apparatus further includes a plurality of resonant elements disposed adjacent to the resonant element of the present invention, and a plurality of wound wires disposed adjacent to the resonant elements. The wound wires electrically connect the resonant elements such that the same current propagates through all of the resonant elements. In some embodiments, the current applied to the resonant element is periodic.

在某些實施例中，該裝置包含連接至屏蔽電極之一電壓源，該電壓源將一恆定電壓施加至屏蔽電極。在某些實施例中，兩個或兩個以上共振元件經機械耦合以使得其共用一共振頻率。機械耦合該等共振元件可包含藉助導體材料來實體連接其各別屏蔽電極。 In some embodiments, the device includes a voltage source coupled to the shield electrode that applies a constant voltage to the shield electrode. In some embodiments, two or more resonant elements are mechanically coupled such that they share a resonant frequency. Mechanically coupling the resonant elements can include physically connecting their respective shield electrodes by means of a conductor material.

在某些實施例中，感測電極相對於共面出現之共振元件之位移定向，藉此允許沿Z方向量測磁場。在某些實施例中，感測電極相對於非共面出現之共振元件之位移定向，藉此允許沿X或Y方向量測磁場。在某些實施例中，用於沿X方向量測之共振元件之定向正交於用於沿Y方向量測之共振元件之定向。在某些實施例中，兩個或兩個以上感測電極經定向以使得其沿多個方向量測共振元件之位移。舉例而言，兩個感測電極可經定向以沿X及Z方向量測共振元件之位移。 In some embodiments, the sense electrodes are oriented relative to the displacement of the coplanar resonant elements, thereby allowing the magnetic field to be measured in the Z direction. In some embodiments, the sensing electrode is oriented with respect to the displacement of the non-coplanar resonant element, thereby allowing the magnetic field to be measured in the X or Y direction. In some embodiments, the orientation of the resonant element for measurement in the X direction is orthogonal to the orientation of the resonant element for measurement in the Y direction. In some embodiments, two or more sensing electrodes are oriented such that they measure the displacement of the resonant element in multiple directions. For example, the two sensing electrodes can be oriented to measure the displacement of the resonant element in the X and Z directions.

在某些實施例中，感測電極至少在裝置之邊緣處經由複數個密集柱陣列支撐。在某些實施例中，其中每一柱僅與感測電極及一底部電極中之一者接觸。在某些實施例中，每一柱與感測電極及底部電極二者接觸。 In some embodiments, the sensing electrodes are supported at least at the edges of the device via a plurality of dense column arrays. In some embodiments, each of the columns is only One of the sensing electrode and one of the bottom electrodes is in contact. In some embodiments, each column is in contact with both the sensing electrode and the bottom electrode.

在某些實施例中，感測電極由一屏蔽電極環繞以最小化寄生電容。在某些實施例中，裝置之一頂部電極及一底部電極經由其間具有氧化物之兩個柱連接，藉此為頂部電極接收來自該兩個柱之支撐。在某些實施例中，可使用複數個共振器裝置以形成一個三維羅盤、加速度計或任何其他適合裝置。 In some embodiments, the sensing electrode is surrounded by a shield electrode to minimize parasitic capacitance. In some embodiments, one of the top electrode and one bottom electrode of the device are connected via two columns having an oxide therebetween, whereby the top electrode receives support from the two columns. In some embodiments, a plurality of resonator devices can be used to form a three-dimensional compass, accelerometer, or any other suitable device.

在另一態樣中，本文中所闡述之系統及方法提供一種磁力計裝置。用於產生一電流之一源安置於磁力計裝置內，且複數個共振元件鄰近於該源安置。僅共振元件中之一者連接至該源。該裝置進一步包含鄰近於共振元件安置之複數個繞線導線。繞線導線電連接共振元件以使得在連接至該源之共振元件處施加之電流穿過其餘共振元件傳播。繞線導線可經安置以使得其不影響電容變化。舉例而言，可藉由安置未經釋放之金屬導線而達成該結果。此可確保繞線導線之位移(及電容變化)不會抵消電容變化以使得電容之淨變化變為零。 In another aspect, the systems and methods described herein provide a magnetometer device. A source for generating a current is disposed within the magnetometer device and a plurality of resonant elements are disposed adjacent to the source. Only one of the resonant elements is connected to the source. The apparatus further includes a plurality of winding wires disposed adjacent to the resonant element. The wire is electrically connected to the resonant element such that current applied at the resonant element connected to the source propagates through the remaining resonant elements. The wire wound wire can be placed such that it does not affect the capacitance change. For example, the result can be achieved by placing an unreleased metal wire. This ensures that the displacement of the wire (and the change in capacitance) does not offset the change in capacitance so that the net change in capacitance becomes zero.

在再一態樣中，本文中所闡述之系統及方法提供用於一種加速度計裝置。一感測電極安置於加速度計裝置內，且一共振元件鄰近於感測電極安置。共振元件包含圍繞介電材料之一內部核心安置之一屏蔽電極。該裝置進一步包含用於產生一電壓之一源。該源連接至共振元件且施加電壓。加速度計裝置量測共振元件之一外部加速度以至屏蔽電極與感測電極之間的一電容變化。位移可由於外部加速度而出現，同時可施加電壓以量測電容變化。 In still another aspect, the systems and methods described herein are provided for an accelerometer device. A sensing electrode is disposed within the accelerometer device and a resonant element is disposed adjacent to the sensing electrode. The resonant element includes a shield electrode disposed about an inner core of one of the dielectric materials. The apparatus further includes a source for generating a voltage. The source is connected to the resonant element and a voltage is applied. The accelerometer device measures one of the external accelerations of the resonant element to the shield A change in capacitance between the electrode and the sensing electrode. The displacement can occur due to external acceleration while a voltage can be applied to measure the change in capacitance.

在再一態樣中，本文中所闡述之系統及方法提供用於一種包括配置於一積體電路中之一MEMS裝置之晶片。該晶片包含形成於一半導體材料基板上之電子元件及產生於半導體材料基板上面之一互連層堆疊。該等互連層包含複數個導體材料層。每一導體材料層由一介電材料層分離。藉由將氣態HF施加至該互連層堆疊而在該互連層堆疊內形成MEMS裝置。該MEMS裝置包含圍繞介電材料之一內部核心安置之導體材料之一屏蔽電極。 In still another aspect, the systems and methods described herein are provided for a wafer including a MEMS device disposed in an integrated circuit. The wafer includes an electronic component formed on a substrate of a semiconductor material and an interconnect layer stack formed on the substrate of the semiconductor material. The interconnect layers comprise a plurality of layers of conductor material. Each layer of conductor material is separated by a layer of dielectric material. A MEMS device is formed within the interconnect layer stack by applying gaseous HF to the interconnect layer stack. The MEMS device includes a shield electrode surrounding one of the conductor materials disposed within an inner core of the dielectric material.

本文中所闡述之系統及方法之其他優點及特性可自以下說明瞭解，其參照隨附圖式提供說明性實施例之一非限制性說明。 Other advantages and features of the systems and methods described herein can be understood from the following description, which is provided by way of non-limiting description.

為提供對本文中所闡述之系統及方法之一總體瞭解，現在將闡述某些說明性實施例。然而，熟習此項技術者將瞭解，本文中所闡述之系統及方法可視要解決之應用之情況適當地調適及修改，且本文中所闡述之系統及方法可在其他適合之應用中採用，且此等其他添加及修改將不背離其範疇。 To provide a general understanding of one of the systems and methods set forth herein, certain illustrative embodiments are now set forth. However, those skilled in the art will appreciate that the systems and methods described herein can be suitably adapted and modified depending on the application to be solved, and that the systems and methods described herein can be employed in other suitable applications, and These other additions and modifications will not detract from its scope.

圖1繪示一先前技術運動感測器裝置100之一說明性概略剖面。裝置100包含呈實證質量塊102之形式之一共振元件，該共振元件經由彈簧104錨定。實證質量塊102鄰近於一感測電極106安置。在某些實施例中，裝置100用作一磁力計，例如，一基於勞倫茲力(Lorentz-force-based)之磁力計或作為一磁力計之一特定情形之一羅盤。此一磁力計依賴於由於當在存在一目標磁場之情況下將一電流施加至實證質量塊102時作用於實證質量塊上之勞倫茲力所致的實證質量塊102之機械運動。實證質量塊102可被驅動至其共振狀態以便獲得最大輸出信號。實證質量塊102之機械運動可以電子方式或光學方式來感測。可針對電子偵測使用壓阻及靜電轉導方法。可針對光學偵測使用藉助雷射源或LED源之位移量測。 FIG. 1 illustrates an illustrative schematic cross-section of a prior art motion sensor device 100. The device 100 includes one of the resonant elements in the form of an empirical mass 102 that is anchored via a spring 104. The empirical mass 102 is disposed adjacent to a sensing electrode 106. In some embodiments, device 100 acts as a magnetic A force gauge, for example, a Lorentz-force-based magnetometer or a compass that is one of the specific conditions of a magnetometer. This magnetometer relies on the mechanical motion of the empirical mass 102 due to the Lorentz force acting on the empirical mass when a current is applied to the empirical mass 102 in the presence of a target magnetic field. The empirical mass 102 can be driven to its resonant state to obtain a maximum output signal. The mechanical motion of the empirical mass 102 can be sensed electronically or optically. Piezoresistive and electrostatic transduction methods can be used for electronic detection. Displacement measurements with a laser source or LED source can be used for optical detection.

在存在一目標磁場之情況下將一電流施加至實證質量塊102。所施加之電流可係單調或週期性的。結果，實證質量塊102展現相對於感測電極106之運動，導致實證質量塊102與感測電極106之間的一電容變化。在一項實施例中，可使用一電荷放大器來量測電容變化，該電荷放大器輸出和實證質量塊102與感測電極106之間的電容成比例之一電壓。電荷放大器之輸出電壓可連接至一比較器，該比較器比較對應於新電容之輸出電壓與對應於原始電容之一參考電壓。參考電壓及輸出電壓可在用於計算目標磁場之一處理器處以一類比或數位形式接收。在另一實施例中，電容變化係以一電流輸出且基於輸出及參考電流來計算。 A current is applied to the empirical mass 102 in the presence of a target magnetic field. The applied current can be monotonic or periodic. As a result, the empirical mass 102 exhibits movement relative to the sensing electrode 106, resulting in a change in capacitance between the empirical mass 102 and the sensing electrode 106. In one embodiment, a charge amplifier can be used to measure the change in capacitance, which is proportional to the capacitance between the empirical mass 102 and the sense electrode 106. The output voltage of the charge amplifier can be coupled to a comparator that compares the output voltage corresponding to the new capacitor with a reference voltage corresponding to one of the original capacitors. The reference voltage and output voltage can be received in a analog or digital form at one of the processors used to calculate the target magnetic field. In another embodiment, the capacitance change is calculated as a current output and based on the output and reference current.

然而，以上所闡述之運動感測器裝置可易受來自雜散電磁場或靜電場之干擾或其他此等效應影響，引致較低敏感度。此外，由於裝置內存在的空氣介質所致的布朗雜訊(Brownian noise)干擾可進一步影響裝置之敏感度。舉例而言，干擾可影響實證質量塊102與感測電極106之間的電容變化。結果，可能未正確量測目標磁場，致使裝置不適合用於其意欲之目的。 However, the motion sensor devices described above may be susceptible to interference from stray electromagnetic fields or electrostatic fields or other such effects, resulting in lower sensitivity. In addition, Brownian noise interference due to the air medium present in the device can further affect the sensitivity of the device. For example In other words, the interference can affect the change in capacitance between the empirical mass 102 and the sense electrode 106. As a result, the target magnetic field may not be properly measured, rendering the device unsuitable for its intended purpose.

圖2中繪示用以解決此干擾之一運動感測器裝置之一說明性實施例。圖2繪示一運動感測器裝置200之一說明性概略剖面。除感測電極208之外，裝置200亦包含具有包封於氧化物204及屏蔽電極206中之導線202之一共振元件。所繪示之包含氧化物204及屏蔽電極206之機械結構屏蔽導線202不受干擾效應影響。該機械結構可進一步充當感測電極208與導線202之間的一電屏蔽。該機械結構亦可充當抵擋在一CMOS製造製程期間所使用之蝕刻劑之一機械障蔽。由於導線202嵌入氧化物中，因此其電遷移限制並不改變。該機械結構可包含一或多種金屬及氧化物之一混合物。此外，共振元件與下伏晶圓之間的熱膨脹係數(CTE)失配可減少，從而獲得較好的溫度穩健性。在某些實施例中，一電壓源連接至該機械結構以便施加一恆定電壓。該機械結構允許可固定於一所期望電壓處之一額外電掣位(electrical point)，以使電子設計更容易。 An illustrative embodiment of one of the motion sensor devices to address this interference is illustrated in FIG. FIG. 2 illustrates an illustrative schematic cross section of a motion sensor device 200. In addition to the sensing electrode 208, the device 200 also includes a resonant element having a wire 202 encapsulated in the oxide 204 and the shield electrode 206. The illustrated mechanical structure shielded conductor 202 comprising oxide 204 and shield electrode 206 is unaffected by interference effects. The mechanical structure can further serve as an electrical shield between the sensing electrode 208 and the wire 202. The mechanical structure can also serve as a mechanical barrier against one of the etchants used during a CMOS fabrication process. Since the wire 202 is embedded in the oxide, its electromigration limit does not change. The mechanical structure can comprise a mixture of one or more metals and oxides. In addition, the coefficient of thermal expansion (CTE) mismatch between the resonant element and the underlying wafer can be reduced, resulting in better temperature robustness. In some embodiments, a voltage source is coupled to the mechanical structure to apply a constant voltage. The mechanical structure allows for an additional electrical point that can be fixed at one of the desired voltages to make electronic design easier.

在某些實施例中，裝置200包含嵌入氧化物中之多個導線。導線可經由包含於裝置200中之繞線導線串聯連接。穿過一導線之勞倫茲電流與磁場相互作用且形成激發結構之振動之一磁力。串聯連接該等導線可對勞倫茲力形成一乘法效應，從而在一低電流值處達成高效能。結果，可僅需要一個電源以將電流供應至裝置200中之導線。在一項實施例中，該等導線係並聯連接。電流可分流到與串聯組態相比要求輸入一較高電流之導線當中。在串聯組態中，電流可按相同方向沿著共振導線傳播。否則，若某些共振導線使電流沿與其他共振導線相反之一方向流動，則其可抵消彼此之效應。繞線導線可確保不會發生此抵消，若僅在沒有繞線導線之情形中共振導線端對端地連接則可發生此抵消。 In certain embodiments, device 200 includes a plurality of wires embedded in an oxide. The wires may be connected in series via winding wires included in the device 200. A Lorentz current through a wire interacts with a magnetic field and forms a magnetic force of the vibration of the excitation structure. Connecting the wires in series creates a multiplicative effect on the Lorentz force, resulting in high performance at a low current value. As a result, only one power source may be needed to supply current to the wires in device 200. In one In an embodiment, the wires are connected in parallel. The current can be shunted into a conductor that requires a higher current input than the series configuration. In a series configuration, current can travel along the resonant conductor in the same direction. Otherwise, if some of the resonant wires cause current to flow in one of the opposite directions to the other resonant wires, they can cancel each other out. The wirewound wire ensures that this cancellation does not occur, which can occur if the resonant wire is connected end-to-end only in the absence of a wire.

在某些實施例中，屏蔽電極206可在其面向感測電極208之表面上包含一細長導通體或指狀物。該細長指狀物可製造為在其頂部上未安置有金屬之一導通體。如此，將該細長指狀物基本上沈積為感測電極208之表面上之一突出部。由於該細長指狀物較接近於感測電極208安置，因此相對於屏蔽電極206之類似位移其可幫助增加屏蔽電極206與感測電極208之間的電容變化。在某些實施例中，細長指狀物之移動亦導致由於細長指狀物進入至感測電極208之空腔中所致的一拓撲改變，此又增加了其壁以及表面之電容。結果，每垂直位移之電容變化可較高，且因此靜電壓力亦可較高。 In some embodiments, the shield electrode 206 can include an elongated via or finger on its surface facing the sense electrode 208. The elongated fingers can be fabricated with one of the metal conductors not disposed on top of the metal. As such, the elongated fingers are substantially deposited as one of the protrusions on the surface of the sensing electrode 208. Since the elongated fingers are disposed closer to the sensing electrodes 208, they can help increase the change in capacitance between the shield electrodes 206 and the sensing electrodes 208 with respect to similar displacements of the shield electrodes 206. In some embodiments, movement of the elongated fingers also results in a topological change due to the entry of the elongated fingers into the cavity of the sensing electrode 208, which in turn increases the capacitance of its walls and surfaces. As a result, the capacitance change per vertical displacement can be higher, and thus the electrostatic pressure can also be higher.

裝置100及200二者可經組態以操作為磁力計、加速度計或任何其他適合之感測器裝置。其可使用在共同擁有之美國專利申請公開案第2010/0295138號(標題為「Methods and Systems for Fabrication of MEMS CMOS Devices」，且藉此以全文引用之方式併入)中所闡述之nanoEMS^TM製程製造。 Both devices 100 and 200 can be configured to operate as a magnetometer, accelerometer, or any other suitable sensor device. It can be used in co-owned US Patent Application Publication No. 2010/0295138 (entitled "Methods and Systems for Fabrication of MEMS CMOS Devices ", and thereby to the incorporated incorporated by reference) nanoEMS ^TM process as set forth in the Manufacturing.

圖3A繪示具有複數個共振元件及感測電極308之一MEMS裝置300之一說明性剖面。在某些實施例中，MEMS裝置300包含約50個至100個共振元件。每一共振元件包含嵌入氧化物304中之一導線302。共振元件亦包含由導體材料製成之一屏蔽電極306。在一項實施例中，MEMS裝置300係組態為一磁力計。當在存在一目標磁場之情況下將一電流施加至共振元件時，共振元件可展現相對於感測電極308之運動，導致共振元件與感測電極308之間的一電容變化。在一項實施例中，可使用一電荷放大器量測電容變化，該電荷放大器輸出與共振元件與感測電極308之間的電容成比例之一電壓。可包含多個共振元件或陣列用於冗餘及/或用於沿多個維度量測磁場。舉例而言，三個共振元件中之每一者可沿x、y及z方向量測磁場。在某些實施例中，磁力計之偵測電子設備包含一跨阻抗放大器(其將電流轉換成電壓)。 FIG. 3A illustrates an illustrative cross section of a MEMS device 300 having a plurality of resonant elements and sensing electrodes 308. In some embodiments, MEMS device 300 includes between about 50 and 100 resonant elements. Each resonant element includes one of the wires 302 embedded in the oxide 304. The resonant element also includes a shield electrode 306 made of a conductive material. In one embodiment, MEMS device 300 is configured as a magnetometer. When a current is applied to the resonant element in the presence of a target magnetic field, the resonant element can exhibit motion relative to the sense electrode 308, resulting in a change in capacitance between the resonant element and the sense electrode 308. In one embodiment, a change in capacitance can be measured using a charge amplifier that outputs a voltage proportional to the capacitance between the resonant element and the sense electrode 308. Multiple resonant elements or arrays may be included for redundancy and/or for measuring magnetic fields along multiple dimensions. For example, each of the three resonant elements can measure the magnetic field in the x , y, and z directions. In some embodiments, the magnetometer's detection electronics include a transimpedance amplifier that converts current into a voltage.

共振元件可包含一個以上導線。在圖3B之MEMS裝置350中圖解說明此情形。圖3B繪示具有複數個共振元件之一MEMS裝置350之一說明性剖面。每一共振元件包含嵌入氧化物356中之導線352及354。在某些實施例中，每一共振元件包含多達約十二個共振元件。共振元件亦包含由導體材料製成之一屏蔽電極358。在一項實施例中，MEMS裝置350係組態為一磁力計。當在存在一目標磁場之情況下將一電流施加至共振元件時，共振元件可展現相對於感測電極360之運動，導致共振元件與感測電極360之間的一電容變化。在一項實施例中，可使用一電荷放大器量測電容變化，該電荷放大器輸出與共振元件與感測電極360之間的電容成比例之一電壓。可包含多個共振元件或陣列用於冗餘及/或用於沿多個維度量測磁場。舉例而言，三個共振元件中之每一者可沿X、Y及Z方向量測磁場。 The resonant element can comprise more than one wire. This situation is illustrated in the MEMS device 350 of Figure 3B. FIG. 3B illustrates an illustrative cross section of one of MEMS devices 350 having a plurality of resonant elements. Each resonant element includes wires 352 and 354 embedded in oxide 356. In some embodiments, each resonant element contains up to about twelve resonant elements. The resonant element also includes a shield electrode 358 made of a conductive material. In one embodiment, MEMS device 350 is configured as a magnetometer. When a current is applied to the resonant element in the presence of a target magnetic field, the resonant element can exhibit motion relative to the sense electrode 360, resulting in the resonant element and sense electrode 360 A capacitance change between. In one embodiment, a change in capacitance can be measured using a charge amplifier that outputs a voltage proportional to the capacitance between the resonant element and the sense electrode 360. Multiple resonant elements or arrays may be included for redundancy and/or for measuring magnetic fields along multiple dimensions. For example, each of the three resonant elements can measure the magnetic field in the X, Y, and Z directions.

在某些實施例中，嵌入一共振元件之氧化物中之多個導線可經由安置於MEMS裝置中之繞線導線串聯連接。穿過每一導線之勞倫茲電流與磁場相互作用且可形成激發共振元件之振動之一磁力。串聯連接導線可對勞倫茲力形成一乘法效應，從而在一低電流值處達成高效能。結果，可僅需要一個電源以將電流供應至共振元件中之導線。該電源可係一電流源、一電壓源或任何其他適合之源。電流可沿相同方向在所有共振元件中傳播。 In some embodiments, a plurality of wires embedded in an oxide of a resonant element can be connected in series via a wound wire disposed in the MEMS device. The Lorentz current through each wire interacts with the magnetic field and can form a magnetic force that excites the vibration of the resonant element. Connecting the wires in series creates a multiplicative effect on the Lorentz force, resulting in high performance at a low current value. As a result, only one power source may be needed to supply current to the wires in the resonant element. The power source can be a current source, a voltage source, or any other suitable source. Current can propagate in all resonant elements in the same direction.

裝置300及350二者可經組態以操作為磁力計、加速度計或任何其他適合之感測器裝置。其可使用在共同擁有之美國專利申請公開案第2010/0295138號(標題為「Methods and Systems for Fabrication of MEMS CMOS Devices」，且藉此以全文引用之方式併入)中所闡述之nanoEMS^TM製程製造。 Both devices 300 and 350 can be configured to operate as a magnetometer, accelerometer, or any other suitable sensor device. It can be used in co-owned US Patent Application Publication No. 2010/0295138 (entitled "Methods and Systems for Fabrication of MEMS CMOS Devices ", and thereby to the incorporated incorporated by reference) nanoEMS ^TM process as set forth in the Manufacturing.

圖4繪示穿過複數個導線402之電流之一說明性概略流動400。導線402可嵌入一單個共振元件之氧化物中或可跨越多個共振元件伸展。導線402之長度可在介於自約300 μm至約400 μm之範圍中變化。在某些實施例中，導線402之長度可係約800 μm。在任一情形中，導線402皆經由繞線導線404串聯連接且僅要求一個電源用於透過導線402傳播電流。串聯連接之導線404用作一單個共振元件且可允許具有此一組態之一運動感測器裝置之一低電流要求(例如，低於1 mA)。電流可沿相同方向在所有共振元件中傳播。 FIG. 4 illustrates an illustrative summary flow 400 of one of the currents through a plurality of wires 402. Wire 402 can be embedded in the oxide of a single resonant element or can extend across multiple resonant elements. The length of the wire 402 can vary from about 300 μm to about 400 μm. In some embodiments, the wire 402 The length can be about 800 μm. In either case, wires 402 are connected in series via winding wires 404 and only one power source is required to propagate current through wires 402. The series connected wires 404 act as a single resonant element and may allow for a low current requirement (eg, less than 1 mA) for one of the motion sensor devices of this configuration. Current can propagate in all resonant elements in the same direction.

圖5A及圖5B繪示具有串聯連接之共振元件之MEMS裝置之說明性剖面。圖5A繪示具有複數個共振元件及對應繞線導線之一MEMS裝置500之一說明性剖面。每一共振元件包含嵌入氧化物中之導線502。每一共振元件亦包含由導體材料製成之一屏蔽電極。共振元件之導線502經由繞線導線504串聯連接。圖5B繪示具有一共振元件及對應繞線導線之另一MEMS裝置550之一說明性剖面。在此實施例中，共振元件包含嵌入氧化物中之多個導線552。共振元件亦包含由導體材料製成之一屏蔽電極。共振元件之導線552經由繞線導線554串聯連接。繞線導線504或554可如圖5A及圖5B中所圖解說明安置於共振元件下面，或其可視需要安置於MEMS裝置之任何其他適合部分中。電流可沿相同方向在導線502或552中傳播。繞線導線504或554可係未經釋放之金屬導線以使得其不會抵消其累積力效應。 5A and 5B illustrate an illustrative cross section of a MEMS device having resonant elements connected in series. FIG. 5A illustrates an illustrative cross section of a MEMS device 500 having a plurality of resonant elements and corresponding winding wires. Each resonant element includes a wire 502 embedded in an oxide. Each resonant element also includes a shield electrode made of a conductor material. The wires 502 of the resonant element are connected in series via a winding wire 504. FIG. 5B illustrates an illustrative cross section of another MEMS device 550 having a resonant component and a corresponding wound wire. In this embodiment, the resonant element includes a plurality of wires 552 embedded in the oxide. The resonant element also includes a shield electrode made of a conductor material. The wires 552 of the resonant element are connected in series via a winding wire 554. The wound wire 504 or 554 can be disposed under the resonant element as illustrated in Figures 5A and 5B, or it can be disposed in any other suitable portion of the MEMS device as desired. Current can propagate in wires 502 or 552 in the same direction. The wound wire 504 or 554 can be an unreleased metal wire such that it does not counteract its cumulative force effect.

如以上所論述，串聯連接該等導線可允許MEMS裝置在一低電流值處之高效能。結果，可僅需要一個電源以將電流供應至共振元件中之導線。該電源可係一電流源、一電壓源或任何其他適合之源。在某些實施例中，導線502或 552可並聯連接或係包含串聯及並聯組態之一組合。 As discussed above, connecting the wires in series can allow for high performance of the MEMS device at a low current value. As a result, only one power source may be needed to supply current to the wires in the resonant element. The power source can be a current source, a voltage source, or any other suitable source. In some embodiments, wire 502 or The 552 can be connected in parallel or in a combination of one of a series and a parallel configuration.

在一項實施例中，MEMS裝置500或550係組態為一磁力計。當在存在一目標磁場之情況下將一電流施加至共振元件時，每一共振元件可展現相對於感測電極之運動，導致共振元件與感測電極之間的一電容變化。在一項實施例中，可使用一電荷放大器量測電容變化，該電荷放大器輸出與共振元件與感測電極之間的電容成比例之一電壓。在某些實施例中，使用一跨阻抗放大器以量測一MEMS羅盤裝置之電容變化。 In one embodiment, the MEMS device 500 or 550 is configured as a magnetometer. When a current is applied to the resonant element in the presence of a target magnetic field, each resonant element can exhibit motion relative to the sense electrode, resulting in a change in capacitance between the resonant element and the sense electrode. In one embodiment, a change in capacitance can be measured using a charge amplifier that outputs a voltage proportional to the capacitance between the resonant element and the sense electrode. In some embodiments, a transimpedance amplifier is used to measure the change in capacitance of a MEMS compass device.

裝置500及550二者可經組態以操作為磁力計、加速度計或任何其他適合之感測器裝置。其可使用在共同擁有之美國專利申請公開案第2010/0295138號(標題為「Methods and Systems for Fabrication of MEMS CMOS Devices」，且藉此以全文引用之方式併入)中所闡述之nanoEMS^TM製程製造。 Both devices 500 and 550 can be configured to operate as a magnetometer, accelerometer, or any other suitable sensor device. It can be used in co-owned US Patent Application Publication No. 2010/0295138 (entitled "Methods and Systems for Fabrication of MEMS CMOS Devices ", and thereby to the incorporated incorporated by reference) nanoEMS ^TM process as set forth in the Manufacturing.

在某些實施例中，多個共振元件之機械結構經機械耦合以使得其以一單個共振頻率振動。即使每一共振元件之共振頻率略微不同，情形亦如此。此允許共振元件以一相長方式干擾且所感測之電流可最大化。圖6繪示具有經機械耦合之複數個共振元件602之一說明性機械結構600。N個共振元件(具有剛性K₁至K_N)可經由具有剛性K_c之耦合件而接合。若K_c<<K₁且K_c<<K₂且依此類推，則N個共振元件以同一頻率振動，相當於具有剛性K₁+K₂+...+K_N之一單個共振元件。低K_c值可幫助將經耦合之共振元件之累積剛性保持為低。 In some embodiments, the mechanical structures of the plurality of resonant elements are mechanically coupled such that they vibrate at a single resonant frequency. This is the case even if the resonant frequency of each resonant element is slightly different. This allows the resonant element to interfere in a constructive manner and the sensed current can be maximized. FIG. 6 illustrates an illustrative mechanical structure 600 having a plurality of resonant elements 602 that are mechanically coupled. The N resonant elements (having stiffness K ₁ to K _N ) can be joined via a coupling having a stiffness K _c . If K _c <<K ₁ and K _c <<K ₂ and so on, the N resonant elements vibrate at the same frequency, corresponding to a single resonant element having a stiffness K ₁ +K ₂ +...+K _N . Low K _c may help rigidity value is kept low by the accumulation of components of the resonant coupling.

在某些實施例中，各別共振元件之屏蔽電極可經由導體材料連接以達成機械耦合。導體材料可包含金屬(諸如鋁、銅或任何其他適合之金屬)及/或合金(諸如一AlCu合金)。如圖7A及圖7B中所圖解說明，可在屏蔽電極之各個部分處建立連接。在某些實施例中，機械耦合之導體材料可彎曲，同時允許每一共振元件顯著維持其曲率。此可有助於經機械耦合之共振元件以一單個共振頻率振動。出於此目的，低K_c值可幫助確保軟的機械耦合件。 In some embodiments, the shield electrodes of the respective resonant elements can be connected via a conductor material to achieve mechanical coupling. The conductor material may comprise a metal such as aluminum, copper or any other suitable metal and/or an alloy such as an AlCu alloy. As illustrated in Figures 7A and 7B, a connection can be established at various portions of the shield electrode. In some embodiments, the mechanically coupled conductor material can be bent while allowing each resonant element to significantly maintain its curvature. This can help the mechanically coupled resonant element to vibrate at a single resonant frequency. For this purpose, the value of the low K _c may be mechanically coupling member helps to ensure soft.

圖7A繪示具有經由導體材料704機械耦合之複數個共振元件702之一MEMS裝置700之一說明性剖面。導體材料704連接共振元件702且可允許共振元件以一單個共振頻率振動。圖7B繪示具有經由導體材料754機械耦合之複數個共振元件752之另一MEMS裝置750之一說明性剖面。導體材料754在不同於圖7A中所繪示之彼位置的一位置處連接共振元件752，但提供與共振元件類似之能力以便以一單個共振頻率振動。 FIG. 7A illustrates an illustrative cross section of a MEMS device 700 having a plurality of resonant elements 702 mechanically coupled via a conductor material 704. Conductor material 704 is coupled to resonant element 702 and may allow the resonant element to vibrate at a single resonant frequency. FIG. 7B illustrates an illustrative cross-section of another MEMS device 750 having a plurality of resonant elements 752 mechanically coupled via conductor material 754. Conductor material 754 connects resonant element 752 at a location other than that depicted in Figure 7A, but provides similar capabilities to the resonant element to vibrate at a single resonant frequency.

裝置700及750二者可經組態以操作為磁力計、加速度計或任何其他適合之感測器裝置。其可使用在共同擁有之美國專利申請公開案第2010/0295138號(標題為「Methods and Systems for Fabrication of MEMS CMOS Devices」，且藉此以全文引用之方式併入)中所闡述之nanoEMS^TM製程製造。 Both devices 700 and 750 can be configured to operate as a magnetometer, accelerometer, or any other suitable sensor device. It can be used in co-owned US Patent Application Publication No. 2010/0295138 (entitled "Methods and Systems for Fabrication of MEMS CMOS Devices ", and thereby to the incorporated incorporated by reference) nanoEMS ^TM process as set forth in the Manufacturing.

圖8A繪示共振元件802之一說明性概略定向800。包含共振元件802之一MEMS裝置使得感測電極相對於非共面出現之共振元件802之位移定向，藉此允許沿X方向量測磁場。圖8B繪示共振元件842之一說明性概略定向840。包含共振元件842之一MEMS裝置使得感測電極相對於非共面出現之共振元件842之位移定向，藉此允許沿Y方向量測磁場。圖8C繪示共振元件882之一說明性概略定向880。包含共振元件882之一MEMS裝置使得感測電極相對於共面出現之共振元件之位移定向，藉此允許沿Z方向量測磁場。在某些實施例中，複數個此等共振元件或陣列及對應感測電極可包含於一MEMS裝置中以形成一個三維磁力計。 FIG. 8A illustrates an illustrative schematic orientation 800 of one of the resonant elements 802. Contains a total The MEMS device of one of the vibrating elements 802 orients the sensing electrodes relative to the displacement of the non-coplanar resonant element 802, thereby allowing the magnetic field to be measured in the X direction. FIG. 8B illustrates an illustrative schematic orientation 840 of one of the resonant elements 842. A MEMS device comprising a resonant element 842 orients the sensing electrode relative to the displacement of the non-coplanar resonant element 842, thereby allowing the magnetic field to be measured in the Y direction. FIG. 8C illustrates an illustrative schematic orientation 880 of one of the resonant elements 882. The MEMS device comprising one of the resonant elements 882 orients the sensing electrodes relative to the displacement of the co-planar resonant elements, thereby allowing the magnetic field to be measured in the Z direction. In some embodiments, a plurality of such resonant elements or arrays and corresponding sensing electrodes can be included in a MEMS device to form a three-dimensional magnetometer.

圖9繪示具有複數個共振元件902及支撐錨桿906之一MEMS裝置900之一說明性剖面。共振元件可以不同方式設計，舉例而言，以電橋、懸臂、線圈或任何其他適合組態之形式。與電橋相比，懸臂可對溫度變化不敏感得多。若尋求較好的溫度穩健性，則使用此類型之結構可係所期望的。若需要長度最大化，則電橋可較佳。此乃因申請人已以實驗方式驗證，CMOS製程之金屬層中之殘餘應力通常係伸張性的，且因此在電橋中往往保持一大程度之平整度。舉例而言，電橋可用以構建其中要求電流總是沿一個方向流動之一磁力計。由於電橋串聯連接，因此電流(由於繞線導線所致)將僅沿一個方向流動且其良好地適合於構建一磁力計。然而，若約束條件為減少頻率失配以最大化陣列之品質因子Q，則一懸臂型結構可係一較好選項。 FIG. 9 illustrates an illustrative cross section of a MEMS device 900 having a plurality of resonant elements 902 and a support anchor 906. The resonant elements can be designed in different ways, for example in the form of bridges, cantilevers, coils or any other suitable configuration. The cantilever is much less sensitive to temperature changes than a bridge. The use of this type of structure can be desirable if better temperature robustness is sought. If the length is required to be maximized, the bridge can be preferred. This is because the applicant has experimentally verified that the residual stress in the metal layer of the CMOS process is usually tensile, and thus tends to maintain a large degree of flatness in the bridge. For example, a bridge can be used to construct a magnetometer in which current is required to always flow in one direction. Since the bridges are connected in series, the current (due to the winding wires) will only flow in one direction and it is well suited to construct a magnetometer. However, if the constraint is to reduce the frequency mismatch to maximize the quality factor Q of the array, then a cantilevered structure can be a better option.

另外，所提議之組態可要求錨桿906支撐感測電極904且確保感測電極904不會彎曲及損壞MEMS裝置。錨桿906可在一給定晶粒上佔據不同空間。舉例而言，一給定錨桿組所佔據之晶粒區域可係約10 μm×10 μm。在另一實例中，所佔據之晶粒區域可係約5 μm×5 μm。此錨桿組允許較密集之錨桿組陣列。錨桿越薄，一給定晶粒空間中可放置之錨桿組越多。每區域較多個錨桿亦可允許較扁平之封蓋但亦允許較多寄生電容。藉由最小化錨桿組之間的距離以使得可減少晶粒上專用於錨桿之總面積，可獲得最佳結果。另外，薄錨桿佔用較少空間且允許將更多空間用於待放置於給定晶粒空間中之MEMS裝置本身。錨桿906經構建以使得其自上至下地電隔離。錨桿經製造以使得當執行汽相HF蝕刻時，其必須行進一較長路徑以蝕刻掉氧化物。結果，某些氧化物908在汽相HF蝕刻之後留下且隔絕錨桿與MEMS裝置之封蓋及/或底部金屬層。 Additionally, the proposed configuration may require the anchor 906 to support the sensing electrode 904 and Ensure that the sensing electrode 904 does not bend and damage the MEMS device. The anchor 906 can occupy different spaces on a given die. For example, a region of the die occupied by a given set of anchors can be about 10 μm x 10 μm. In another example, the occupied grain area can be about 5 μm x 5 μm. This set of anchors allows for a denser array of anchor sets. The thinner the anchor, the more anchor sets can be placed in a given grain space. Multiple anchors per zone may also allow for a flatter cover but also allow for more parasitic capacitance. The best results are obtained by minimizing the distance between the sets of anchors so that the total area dedicated to the bolts on the dies can be reduced. In addition, the thin anchor takes up less space and allows more space to be used for the MEMS device itself to be placed in a given die space. The anchor 906 is constructed such that it is electrically isolated from top to bottom. The anchor is fabricated such that when performing a vapor phase HF etch, it must travel a longer path to etch away the oxide. As a result, certain oxides 908 leave and isolate the cap and the bottom metal layer of the MEMS device after vapor phase HF etching.

圖10繪示具有複數個共振元件1002及支撐柱錨桿1008之一MEMS裝置1000之一說明性剖面。術語「錨桿」及「柱」可在本發明之上下文中互換使用。在某些態樣中，MEMS裝置1000不同於MEMS裝置900。舉例而言，柱錨桿1008可支撐MEMS裝置1000上之封蓋或頂部金屬層1006(例如，Al濺鍍或任何其他適合之薄膜封蓋)且確保其不會彎曲。然而，柱錨桿1008係唯金屬結構，例如，金屬柱及導通體。此等錨桿可使MEMS裝置之封蓋1006與底部金屬層短路。如圖10中所圖解說明，用柱錨桿1008之間的介電材料1010替代堆疊之一部分。氧化物部分可具有一方形形狀或任何其他適合形狀，以使得氧化物不被蝕刻掉。封蓋1006可不具有釋放孔以保留下方之氧化物。與其他錨桿實施方案相比，金屬與氧化物之組合可提供較好穩健性。柱錨桿1008之機械穩健性與蝕刻時間無關。因此，甚至長蝕刻時間亦不會導致柱錨桿1008對封蓋1006提供之支撐之一減少。 10 illustrates an illustrative cross-section of a MEMS device 1000 having a plurality of resonant elements 1002 and a support post anchor 1008. The terms "anchor" and "column" are used interchangeably in the context of the present invention. In some aspects, MEMS device 1000 is different than MEMS device 900. For example, the column anchor 1008 can support a cap or top metal layer 1006 on the MEMS device 1000 (eg, Al sputter or any other suitable film cover) and ensure that it does not bend. However, the column anchor 1008 is a metal-only structure, such as a metal post and a conductive body. These anchors can short the cover 1006 of the MEMS device to the bottom metal layer. As illustrated in Figure 10, a portion of the stack is replaced with a dielectric material 1010 between the column anchors 1008. The oxide portion may have a square shape Shape or any other suitable shape such that the oxide is not etched away. The closure 1006 may have no release aperture to retain the underlying oxide. The combination of metal and oxide provides better robustness than other anchor embodiments. The mechanical robustness of the column anchor 1008 is independent of the etching time. Therefore, even a long etch time does not result in a reduction in one of the support provided by the column anchor 1008 to the cover 1006.

在另一態樣中，MEMS裝置1000不同於MEMS裝置900。MEMS裝置1000之感測電極1004安置於空腔內鄰近於共振元件1002且與外界電屏蔽。其由一屏蔽外殼環繞，該屏蔽外殼包含MEMS裝置之封蓋1006、柱錨桿1008及底部層之導體材料。如此，存在最小到完全不存在來自外部電磁場或靜電場之干擾。此減少感測電極1004上之寄生電容，且幫助進一步增加MEMS裝置1000之SNR以達成較高敏感度。舉例而言，與MEMS裝置900相比，MEMS裝置1000可偵測一目標磁場中之甚至更小改變，且進一步允許目標磁場之一較大動態範圍。此外，所提議之組態可在製造期間提供較好的良率以及(若期望)允許較大(或較長)共振元件1002。 In another aspect, MEMS device 1000 is different than MEMS device 900. The sensing electrode 1004 of the MEMS device 1000 is disposed within the cavity adjacent to the resonant element 1002 and electrically shielded from the outside. It is surrounded by a shielded outer casing comprising a cover 1006 of the MEMS device, a column anchor 1008 and a conductor material of the bottom layer. As such, there is minimal to no interference from external electromagnetic fields or electrostatic fields. This reduces the parasitic capacitance on the sensing electrode 1004 and helps to further increase the SNR of the MEMS device 1000 to achieve higher sensitivity. For example, MEMS device 1000 can detect even smaller changes in a target magnetic field than MEMS device 900, and further allow for a larger dynamic range of one of the target magnetic fields. Moreover, the proposed configuration can provide better yield during manufacturing and, if desired, allow for larger (or longer) resonant elements 1002.

裝置900及1000二者可經組態以操作為磁力計、加速度計或任何其他適合之感測器裝置。其可使用在共同擁有之美國專利申請公開案第2010/0295138號(標題為「Methods and Systems for Fabrication of MEMS CMOS Devices」，且藉此以全文引用之方式併入)中所闡述之nanoEMS^TM製程製造。下文所闡述的係經由一基於CMOS MEMS之製程(例如，nanoEMS^TM製程)來製造一陣列之一MEMS裝置之製程流程步驟。然而，MEMS裝置之製造製程不必限制於基於CMOS MEMS之製程，而是可包含基於MEMS之製程、基於NEMS之製程及其他適合製程。 Both devices 900 and 1000 can be configured to operate as a magnetometer, accelerometer, or any other suitable sensor device. It can be used in co-owned US Patent Application Publication No. 2010/0295138 (entitled "Methods and Systems for Fabrication of MEMS CMOS Devices ", and thereby to the incorporated incorporated by reference) nanoEMS ^TM process as set forth in the Manufacturing. The system set forth below of a CMOS MEMS-based process (e.g., nanoEMS ^TM process) process to manufacture a MEMS device of the array via a one step process. However, the manufacturing process of the MEMS device is not necessarily limited to a CMOS-based MEMS-based process, but may include a MEMS-based process, a NEMS-based process, and other suitable processes.

圖11A繪示在用於製造具有複數個共振元件之一MEMS裝置之一第一組製程流程步驟之後的一說明性剖面。層之厚度已被放大。在一項實施例中，使用一標準CMOS製程製造該MEMS裝置。在一項實施例中，在形成於一CMOS晶片之互連層內之一空腔中製造該MEMS裝置。在一替代實施例中，將該MEMS裝置製造為一獨立MEMS裝置。起初沈積一金屬層。該金屬層可由(例如)AlCu金屬合金製成。將一遮罩層沈積於金屬層上面，且然後蝕刻金屬層以形成板1102。將一金屬間介電質(IMD)層沈積於板1102上面，後續接著一遮罩層，且然後蝕刻並用金屬填充該IMD層以形成間隔物或導通體1106。在一項實施例中，該IMD層包含一非摻雜氧化物層。沈積另一金屬層，後續接著沈積於該金屬層上面之一遮罩層，且然後蝕刻該金屬層以形成板1104。將另一IMD層沈積於板1104上面，後續接著一遮罩層，且然後蝕刻並用金屬填充該IMD層以形成間隔物或導通體1108。板1102及1104與間隔物1106及1108一起形成共振元件之屏蔽電極之部分。將一金屬層沈積於間隔物1108上以形成屏蔽電極之另一部分。將另一IMD層沈積於電橋410上，後續接著頂部金屬層1112。將一遮罩層沈積於頂部金屬層1112上。然後蝕刻頂部金屬層1112以形成通孔1114。該等通孔可允許蝕刻劑(例如，氣態HF)通過以蝕刻頂部金屬層1112下面的材料。 Figure 11A illustrates an illustrative cross section after the first set of process steps for fabricating a MEMS device having a plurality of resonant elements. The thickness of the layer has been enlarged. In one embodiment, the MEMS device is fabricated using a standard CMOS process. In one embodiment, the MEMS device is fabricated in a cavity formed in an interconnect layer of a CMOS wafer. In an alternate embodiment, the MEMS device is fabricated as a separate MEMS device. A metal layer is initially deposited. The metal layer can be made of, for example, an AlCu metal alloy. A mask layer is deposited over the metal layer and the metal layer is then etched to form the board 1102. An inter-metal dielectric (IMD) layer is deposited over the board 1102, followed by a mask layer, and then the IMD layer is etched and filled with metal to form spacers or vias 1106. In one embodiment, the IMD layer comprises an undoped oxide layer. Another metal layer is deposited, followed by deposition on one of the mask layers over the metal layer, and then the metal layer is etched to form the plate 1104. Another IMD layer is deposited over the board 1104, followed by a mask layer, and then the IMD layer is etched and filled with metal to form spacers or vias 1108. Plates 1102 and 1104 together with spacers 1106 and 1108 form part of the shield electrode of the resonant element. A metal layer is deposited over the spacer 1108 to form another portion of the shield electrode. Another IMD layer is deposited on the bridge 410, followed by the top metal layer 1112. A mask layer is deposited on top metal layer 1112. The top metal layer 1112 is then etched to form a pass Hole 1114. The vias may allow an etchant (eg, gaseous HF) to pass through to etch the material underlying the top metal layer 1112.

圖11B及圖11C繪示分別在用於製造具有複數個共振元件之一MEMS裝置之一第二組及一第三組製程流程步驟之後的剖面。經由頂部金屬層1112中之通孔1114釋放一蝕刻劑(例如，乾HF)。該蝕刻劑蝕刻掉IMD層之部分以釋放MEMS裝置之錨桿及電橋，如圖11B中所展示。IMD層之氧化物1142仍提供對MEMS裝置之支撐。最後，將金屬化層1182沈積(例如，通常經由Al濺鍍及圖案化)於頂部金屬層1112上以密封MEMS裝置與外部環境隔離，如圖11C中所展示。在一項實施例中，MEMS裝置係使用基於MEMS、基於NEMS或基於MEMS CMOS之積體晶片技術製造。 11B and 11C illustrate cross sections respectively after the second group and a third set of process steps for fabricating one of the MEMS devices having a plurality of resonant elements. An etchant (eg, dry HF) is released via vias 1114 in the top metal layer 1112. The etchant etches away portions of the IMD layer to release the anchors and bridges of the MEMS device, as shown in Figure 11B. The oxide 1142 of the IMD layer still provides support for the MEMS device. Finally, metallization layer 1182 is deposited (eg, typically sputtered and patterned via Al) onto top metal layer 1112 to seal the MEMS device from the external environment, as shown in FIG. 11C. In one embodiment, the MEMS device is fabricated using MEMS based, NEMS based or MEMS based CMOS based integrated wafer technology.

在某些實施例中，將一MEMS裝置配置於一積體電路中。在該積體電路之互連層中執行圖11A至圖11C之製程流程步驟。產生形成一半導體材料基板上之電及/或電子元件之層。產生包含導體材料之一底部層及導體材料之一頂部層之互連層，該底部層與該頂部層藉由至少一個介電材料層分離。藉助頂部上之矽氧化物及TiN之一子層製成之上部層或鈍化層然後可經圖案化以打開所要求之孔以便過後施加汽相HF。藉由根據關於圖11A至圖11C所闡述之製程流程步驟將氣態HF施加至該至少一個介電材料層，在互連層內形成該MEMS裝置之一部分。 In some embodiments, a MEMS device is disposed in an integrated circuit. The process flow steps of FIGS. 11A through 11C are performed in the interconnect layer of the integrated circuit. A layer is formed that forms electrical and/or electronic components on a substrate of semiconductor material. An interconnect layer comprising a bottom layer of one of the conductor materials and a top layer of one of the conductor materials is produced, the bottom layer being separated from the top layer by at least one layer of dielectric material. The upper layer or passivation layer is formed by means of a top sub-layer of tantalum oxide and a sub-layer of TiN which can then be patterned to open the desired holes for subsequent application of vapor phase HF. A portion of the MEMS device is formed within the interconnect layer by applying gaseous HF to the at least one dielectric material layer in accordance with the process flow steps set forth with respect to Figures 11A-11C.

在某些實施例中，一MEMS裝置包含具有一屏蔽電極之一共振元件，該屏蔽電極在其面向一感測電極之表面上包含一細長導通體或指狀物。該細長指狀物可增加慣性裝置或任何靜電裝置之敏感度，且不限於下文所論述之實施例。該細長指狀物可製造為在其頂部上未安置有金屬之一導通體。如此，將該細長指狀物基本上沈積為感測電極之表面上之一突出部。圖12A及圖12B展示具有細長指狀物之MEMS裝置1200及1250之說明性實施例。裝置1200包含感測電極1202及具有一屏蔽電極之共振元件1204，該屏蔽電極在其面向感測電極1202之表面上包含細長指狀物1206。類似地，裝置1250包含感測電極1252及具有一屏蔽電極之共振元件1254，該屏蔽電極在其面向感測電極1252之表面上包含細長指狀物1256。感測電極1202係一個三面結構，而感測電極1252包含四個面。熟習此項技術者可能確認感測電極之諸多變化形式。 In some embodiments, a MEMS device includes a resonant element having a shield electrode that is coated on a surface thereof facing a sensing electrode Contains an elongated conductive body or finger. The elongated fingers can increase the sensitivity of the inertial device or any electrostatic device and are not limited to the embodiments discussed below. The elongated fingers can be fabricated with one of the metal conductors not disposed on top of the metal. As such, the elongated fingers are deposited substantially as one of the protrusions on the surface of the sensing electrode. 12A and 12B show an illustrative embodiment of MEMS devices 1200 and 1250 having elongated fingers. Device 1200 includes a sensing electrode 1202 and a resonant element 1204 having a shield electrode that includes elongated fingers 1206 on a surface thereof that faces sensing electrode 1202. Similarly, device 1250 includes a sensing electrode 1252 and a resonant element 1254 having a shield electrode that includes elongated fingers 1256 on its surface that faces sensing electrode 1252. The sensing electrode 1202 is a three-sided structure, and the sensing electrode 1252 includes four faces. Those skilled in the art may recognize many variations of the sensing electrodes.

由於細長指狀物1206或1256接近於感測電極1202或1252安置，因此其可幫助相對於各別共振元件之類似位移增加共振元件1204或1254與感測電極1202或1252之間的電容變化。在某些實施例中，細長指狀物之移動亦導致由於細長指狀物進入至感測電極之空腔中所致的一拓撲改變，此又增加了其壁以及表面之電容。結果，每垂直位移之電容變化可較高，且因此靜電壓力亦可較高。在某些實施例中，當垂直間隙比橫向間隙相對較大時指狀物最有效。在某些實施例中，電位垂直敏感度改良可高達約550%。在類似敏感度之共振元件中此可導致高達約2.35倍的線性大小減少，例如，具有細長指狀物之一42 μm直徑元件在敏感度方面可等效於不具有細長指狀物之一100 μm直徑元件。 Since the elongated fingers 1206 or 1256 are disposed proximate to the sensing electrodes 1202 or 1252, they can help increase the change in capacitance between the resonant elements 1204 or 1254 and the sensing electrodes 1202 or 1252 relative to similar displacements of the respective resonant elements. In some embodiments, movement of the elongated fingers also results in a topological change due to the entry of the elongated fingers into the cavity of the sensing electrode, which in turn increases the capacitance of its walls and surfaces. As a result, the capacitance change per vertical displacement can be higher, and thus the electrostatic pressure can also be higher. In some embodiments, the fingers are most effective when the vertical gap is relatively larger than the lateral gap. In certain embodiments, the potential vertical sensitivity improvement can be as high as about 550%. This can result in a linear size reduction of up to about 2.35 times in a similarly sensitive resonant element, for example, a 42 μm diameter component with elongated fingers at sensitivity Aspects may be equivalent to a 100 μm diameter element that does not have elongated fingers.

在某些實施例中，多個共振元件可在互連層中製造且可安置於可選擇性地控制該等共振元件之一特殊應用積體電路(ASIC)上面。在某些實施例中，在該ASIC上面製造一單個類型之MEMS裝置，例如，一磁力計。某些裝置起初可未被使用且保留為冗餘以防備另一使用中之裝置發生故障。在一裝置因製造期間之問題導致故障之情形中，冗餘裝置可幫助改良良率。在一裝置在操作期間發生故障之情形中，冗餘裝置可幫助改良長期可靠性。 In some embodiments, a plurality of resonant elements can be fabricated in the interconnect layer and can be disposed on one of the special application integrated circuits (ASICs) that can selectively control the resonant elements. In some embodiments, a single type of MEMS device, such as a magnetometer, is fabricated on the ASIC. Some devices may initially be unused and reserved for redundancy in case another device in use fails. In the event that a device causes a failure due to problems during manufacturing, redundant devices can help improve yield. In the event that a device fails during operation, redundant devices can help improve long-term reliability.

在某些實施例中，將多個共振元件組態為不同類型之感測器。舉例而言，共振元件可包含一磁力計、一陀螺儀及一加速度計。在另一實例中，共振元件可包含一3-D磁力計、一3-D陀螺儀及一3-D加速度計。在某些實施例中，將共振元件構建於一ASIC之頂部上，且該ASIC可視需要在每一共振元件之間切換。舉例而言，可在ASIC之互連層內形成包含一磁力計、一陀螺儀及一加速度計之一可重新組態運動感測器單元。然後，該運動感測器單元之ASIC控制器可選擇該運動感測器單元應提供一磁力計、一陀螺儀還是一加速度計之功能。在某些實施例中，除多種類型之運動感測器裝置外，一混合式運動感測器亦構建有冗餘元件，藉此提供可重新組態性、冗餘性及可靠性之組合益處。 In some embodiments, multiple resonant elements are configured as different types of sensors. For example, the resonant element can include a magnetometer, a gyroscope, and an accelerometer. In another example, the resonant element can include a 3-D magnetometer, a 3-D gyroscope, and a 3-D accelerometer. In some embodiments, the resonant element is built on top of an ASIC and the ASIC can be switched between each resonant element as desired. For example, a reconfigurable motion sensor unit including a magnetometer, a gyroscope, and an accelerometer can be formed within the interconnect layer of the ASIC. The ASIC controller of the motion sensor unit can then select whether the motion sensor unit should provide a magnetometer, a gyroscope, or an accelerometer. In some embodiments, in addition to various types of motion sensor devices, a hybrid motion sensor is also constructed with redundant components, thereby providing a combined benefit of reconfigurability, redundancy, and reliability. .

申請人將本文中所揭示之實施例之所有可操作組合視為可取得專利之標的物。熟習此項技術者僅使用常規實驗即可瞭解或能夠確認本文中所闡述之實施例及實踐之諸多等效內容。因此，將瞭解，本文中所闡述之系統及方法不限於本文中所揭示之實施例，而是應根據按法律所允許之廣義來解譯之以下申請專利範圍來理解。亦應注意，儘管以下申請專利範圍以一特定方式配置以使得某些申請專利範圍直接地或間接地取決於其他申請專利範圍，但以下申請專利範圍中之任何項皆可直接地或間接地取決於以下申請專利範圍中之任何其他項，以實現本文中所闡述之各種實施例中之任一者。 Applicants consider all operable combinations of the embodiments disclosed herein to be patentable. Those skilled in the art will only use routine experimentation. Many equivalents to the embodiments and practices set forth herein may be understood or determined. Therefore, it is to be understood that the systems and methods described herein are not limited to the embodiments disclosed herein. It should also be noted that, although the scope of the following claims is to be construed in a specific manner such that the scope of the claims is directly or indirectly dependent on the scope of the other claims, any of the following claims can be directly or indirectly Any other item in the scope of the following patent application to achieve any of the various embodiments set forth herein.

100‧‧‧先前技術運動感測器裝置/裝置 100‧‧‧Previous technical motion sensor devices/devices

102‧‧‧實證質量塊 102‧‧‧positive quality block

104‧‧‧彈簧 104‧‧‧ Spring

106‧‧‧感測電極 106‧‧‧Sensing electrode

200‧‧‧運動感測器裝置/裝置 200‧‧‧Sports sensor device/device

202‧‧‧導線 202‧‧‧ wire

204‧‧‧氧化物 204‧‧‧Oxide

206‧‧‧屏蔽電極 206‧‧‧Shield electrode

208‧‧‧感測電極 208‧‧‧Sensing electrode

300‧‧‧微機電裝置/裝置 300‧‧‧Microelectromechanical devices/devices

302‧‧‧導線 302‧‧‧Wire

304‧‧‧氧化物 304‧‧‧Oxide

306‧‧‧屏蔽電極 306‧‧‧Shield electrode

308‧‧‧感測電極 308‧‧‧Sensing electrode

350‧‧‧微機電裝置/裝置 350‧‧‧Microelectromechanical devices/devices

352‧‧‧導線 352‧‧‧Wire

354‧‧‧導線 354‧‧‧Wire

356‧‧‧氧化物 356‧‧‧Oxide

358‧‧‧屏蔽電極 358‧‧‧Shield electrode

360‧‧‧感測電極 360‧‧‧Sensing electrode

400‧‧‧說明性概略流動 400‧‧‧ Explanatory flow

402‧‧‧導線 402‧‧‧Wire

404‧‧‧繞線導線 404‧‧‧winding wire

500‧‧‧微機電裝置/裝置 500‧‧‧Microelectromechanical devices/devices

502‧‧‧導線 502‧‧‧ wire

504‧‧‧繞線導線 504‧‧‧Wired wire

550‧‧‧微機電裝置/裝置 550‧‧‧Microelectromechanical devices/devices

552‧‧‧導線 552‧‧‧Wire

554‧‧‧繞線導線 554‧‧‧winding wire

600‧‧‧說明性機械結構 600‧‧‧ illustrative mechanical structure

602‧‧‧共振元件 602‧‧‧Resonance components

700‧‧‧微機電裝置/裝置 700‧‧‧Microelectromechanical devices/devices

702‧‧‧共振元件 702‧‧‧Resonance components

704‧‧‧導體材料 704‧‧‧Conductor materials

750‧‧‧微機電裝置/裝置 750‧‧‧Microelectromechanical devices/devices

752‧‧‧共振元件 752‧‧‧Resonance components

754‧‧‧導體材料 754‧‧‧Conductor materials

800‧‧‧說明性定向 800‧‧‧Descriptive orientation

802‧‧‧共振元件 802‧‧‧Resonance components

840‧‧‧說明性定向 840‧‧‧Descriptive orientation

842‧‧‧共振元件 842‧‧‧Resonance components

880‧‧‧說明性概略定向 880‧‧‧ illustrative general orientation

882‧‧‧共振元件 882‧‧‧Resonance components

900‧‧‧微機電裝置/裝置 900‧‧‧Microelectromechanical devices/devices

902‧‧‧共振元件 902‧‧‧Resonance components

904‧‧‧感測電極 904‧‧‧Sensor electrode

906‧‧‧支撐錨桿/錨桿 906‧‧‧Support bolts/bolts

908‧‧‧氧化物 908‧‧‧Oxide

1000‧‧‧微機電裝置/裝置 1000‧‧‧Microelectromechanical devices/devices

1002‧‧‧共振元件 1002‧‧‧Resonance components

1004‧‧‧感測電極 1004‧‧‧Sensor electrode

1006‧‧‧封蓋/頂部金屬層 1006‧‧‧Cover/top metal layer

1008‧‧‧支撐柱錨桿/柱錨桿 1008‧‧‧Support column anchor/column anchor

1010‧‧‧介電材料 1010‧‧‧ dielectric materials

1102‧‧‧板 1102‧‧‧ board

1104‧‧‧板 1104‧‧‧ boards

1106‧‧‧間隔物/導通體 1106‧‧‧Spacers/conductors

1108‧‧‧間隔物/導通體 1108‧‧‧ spacers/conductors

1112‧‧‧頂部金屬層 1112‧‧‧Top metal layer

1114‧‧‧通孔 1114‧‧‧through hole

1142‧‧‧氧化物 1142‧‧‧Oxide

1182‧‧‧金屬化層 1182‧‧‧metallization

1200‧‧‧微機電裝置/裝置 1200‧‧‧Microelectromechanical devices/devices

1202‧‧‧感測電極 1202‧‧‧Sensor electrode

1204‧‧‧共振元件 1204‧‧‧Resonance components

1206‧‧‧細長指狀物 1206‧‧‧Slim fingers

1250‧‧‧微機電裝置/裝置 1250‧‧‧Microelectromechanical devices/devices

1252‧‧‧感測電極 1252‧‧‧Sensor electrode

1254‧‧‧共振元件 1254‧‧‧Resonance components

1256‧‧‧細長指狀物 1256‧‧‧Slim fingers

x‧‧‧方向 X‧‧‧ directions

y‧‧‧方向 Y‧‧‧ direction

z‧‧‧方向 Z‧‧‧direction

圖1繪示一先前技術運動感測器裝置之一概略剖面；圖2根據本發明之一說明性實施例繪示一運動感測器裝置之一概略剖面；圖3A根據本發明之一說明性實施例繪示具有複數個共振元件之一MEMS裝置之一剖面；圖3B根據本發明之另一說明性實施例繪示具有複數個共振元件之一MEMS裝置之一剖面；圖4根據本發明之一說明性實施例繪示穿過複數個共振元件之電流之一概略流動；圖5A根據本發明之一說明性實施例繪示具有複數個共振元件及對應繞線導線之一MEMS裝置之一剖面；圖5B根據本發明之另一說明性實施例繪示具有一共振元件及對應繞線導線之一MEMS裝置之一剖面；圖6根據本發明之一說明性實施例繪示經機械耦合之複數個共振元件；圖7A根據本發明之一說明性實施例繪示具有經機械耦合之複數個共振元件之一MEMS裝置之一剖面；圖7B根據本發明之另一說明性實施例繪示具有經機械耦合之複數個共振元件之一MEMS裝置之一剖面；圖8A根據本發明之一說明性實施例繪示一共振元件之一概略定向；圖8B根據本發明之另一說明性實施例繪示一共振元件之一概略定向；圖8C根據本發明之再一說明性實施例繪示一共振元件之一概略定向；圖9根據本發明之一說明性實施例繪示具有複數個共振元件及支撐錨桿之一MEMS裝置之一剖面；圖10根據本發明之另一說明性實施例繪示具有複數個共振元件及支撐錨桿之一MEMS裝置之一剖面；圖11A根據本發明之一說明性實施例繪示在用於製造具有複數個共振元件之一MEMS裝置之一第一組製程流程步驟之後的一剖面；圖11B根據本發明之一說明性實施例繪示在用於製造具有複數個共振元件之一MEMS裝置之一第二組製程流程步驟之後的一剖面；圖11C根據本發明之一說明性實施例繪示在用於製造具有複數個共振元件之一MEMS裝置之一第三組製程流程步驟之後的一剖面；圖12A根據本發明之一說明性實施例繪示具有一細長指狀物之一MEMS裝置之一概略視圖；且圖12B根據本發明之另一說明性實施例繪示具有一細長指狀物之一MEMS裝置之一概略視圖。 1 is a schematic cross-sectional view of a prior art motion sensor device; FIG. 2 is a schematic cross-sectional view of a motion sensor device according to an illustrative embodiment of the present invention; FIG. 3A is illustrative according to one embodiment of the present invention The embodiment illustrates a cross section of a MEMS device having a plurality of resonant elements; and FIG. 3B illustrates a cross section of a MEMS device having a plurality of resonant elements in accordance with another illustrative embodiment of the present invention; FIG. 4 is in accordance with the present invention. An illustrative embodiment illustrates a rough flow of current through a plurality of resonant elements; FIG. 5A illustrates a cross section of a MEMS device having a plurality of resonant elements and corresponding winding wires, in accordance with an illustrative embodiment of the invention FIG. 5B illustrates a cross section of a MEMS device having a resonant element and a corresponding wound wire according to another illustrative embodiment of the present invention; FIG. 6 illustrates a mechanically coupled complex according to an illustrative embodiment of the present invention; a plurality of resonant elements; FIG. 7A illustrates a cross section of a MEMS device having a plurality of mechanically coupled resonant elements in accordance with an illustrative embodiment of the present invention; FIG. 7B is illustrated in accordance with another illustrative embodiment of the present invention A cross section of a MEMS device of a plurality of resonant elements that are mechanically coupled; FIG. 8A illustrates a schematic orientation of one of the resonant elements in accordance with an illustrative embodiment of the present invention; FIG. 8B depicts another illustrative embodiment of the present invention A schematic orientation of one of the resonant elements is shown; FIG. 8C illustrates a schematic orientation of a resonant element in accordance with yet another illustrative embodiment of the present invention; FIG. 9 illustrates a plurality of resonant elements in accordance with an illustrative embodiment of the present invention. A cross-section of one of the MEMS devices supporting the anchor; FIG. 10 illustrates a cross-section of a MEMS device having a plurality of resonant elements and a support anchor in accordance with another illustrative embodiment of the present invention; FIG. 11A is illustrated in accordance with one aspect of the present invention The embodiment shows a section after a first set of process steps for fabricating a MEMS device having a plurality of resonant elements; FIG. 11B is depicted in accordance with an illustrative embodiment of the invention a section after a second set of process steps for fabricating a MEMS device having a plurality of resonant elements; FIG. 11C is shown in an exemplary embodiment of the invention for fabricating one of a plurality of resonant elements a section of the third set of process steps of the MEMS device; 12A is a schematic view of one of the MEMS devices having an elongated finger; and FIG. 12B illustrates an elongated finger according to another illustrative embodiment of the invention. A schematic view of one of the MEMS devices.

352‧‧‧導線 352‧‧‧Wire

354‧‧‧導線 354‧‧‧Wire

356‧‧‧氧化物 356‧‧‧Oxide

358‧‧‧屏蔽電極 358‧‧‧Shield electrode

360‧‧‧感測電極 360‧‧‧Sensing electrode

Claims

一種磁力計裝置，其包括：一感測電極，其安置於該磁力計裝置內；一共振元件，其鄰近於該感測電極安置，其中該共振元件包含圍繞一內部導線安置之一屏蔽電極；一源，其用於產生一電流，該源連接至該共振元件用於透過該內部導線施加該電流，藉此導致該共振元件之一位移；其中量測該共振元件之一磁場以至該屏蔽電極與該感測電極之間的一電容變化。 A magnetometer device comprising: a sensing electrode disposed in the magnetometer device; a resonant element disposed adjacent to the sensing electrode, wherein the resonant element includes a shielding electrode disposed about an inner conductor; a source for generating a current, the source being coupled to the resonant element for applying the current through the internal lead, thereby causing displacement of one of the resonant elements; wherein measuring a magnetic field of the resonant element to the shielded electrode A change in capacitance with the sensing electrode.

如請求項1之裝置，其進一步包括：複數個共振元件，其鄰近於該共振元件安置；複數個繞線導線，其鄰近於該等共振元件安置，其中該等繞線導線電連接該等共振元件以使得該電流沿一個方向穿過該複數個共振元件傳播。 The apparatus of claim 1, further comprising: a plurality of resonant elements disposed adjacent to the resonant element; a plurality of winding wires disposed adjacent to the resonant elements, wherein the winding wires electrically connect the resonances The component is such that the current propagates through the plurality of resonant elements in one direction.

如請求項1之裝置，其進一步包括：一電壓源，其連接至該屏蔽電極用於相對於該感測電極將一恆定電壓施加至該屏蔽電極。 The device of claim 1, further comprising: a voltage source coupled to the shield electrode for applying a constant voltage to the shield electrode relative to the sense electrode.

如請求項1之裝置，其中該電流係週期性的。 The device of claim 1, wherein the current is periodic.

如請求項1之裝置，其中該至少兩個共振元件經機械耦合以使得其共用一共振頻率，其中機械耦合該至少兩個共振元件包括藉助導體材料來實體連接該等各別屏蔽電極。 A device as claimed in claim 1, wherein the at least two resonant elements are mechanically coupled such that they share a resonant frequency, wherein mechanically coupling the at least two resonant elements comprises physically connecting the respective shield electrodes by means of a conductor material.

如請求項1之裝置，其中該感測電極相對於共面出現之該共振元件之位移定向，藉此允許沿Z方向量測該磁場。 The device of claim 1, wherein the sensing electrode is present relative to the coplanar surface The displacement of the resonant element is oriented, thereby allowing the magnetic field to be measured in the Z direction.

如請求項1之裝置，其中該感測電極相對於非共面出現之該共振元件之位移定向，藉此允許沿X或Y方向量測該磁場。 A device as claimed in claim 1, wherein the sensing electrode is oriented with respect to a displacement of the resonant element that is non-coplanar, thereby allowing the magnetic field to be measured in the X or Y direction.

如請求項5之裝置，其中用於沿該X方向量測之該共振元件之定向正交於用於沿該Y方向量測之該共振元件之定向。 The apparatus of claim 5 wherein the orientation of the resonant element for measurement along the X direction is orthogonal to the orientation of the resonant element for measurement along the Y direction.

如請求項1之裝置，其中該感測電極至少在該裝置之邊緣處經由複數個密集柱陣列支撐。 The device of claim 1, wherein the sensing electrode is supported at least at an edge of the device via a plurality of dense column arrays.

如請求項9之裝置，其中每一柱僅與該感測電極及一底部電極中之一者接觸。 The device of claim 9, wherein each of the posts is in contact with only one of the sensing electrode and a bottom electrode.

如請求項1之裝置，其中該感測電極由一屏蔽電極環繞以最小化寄生電容。 The device of claim 1, wherein the sensing electrode is surrounded by a shield electrode to minimize parasitic capacitance.

如請求項9之裝置，其中該裝置之一頂部電極及一底部電極經由其間具有氧化物之兩個柱連接，藉此為該頂部電極接收來自該兩個柱之支撐。 The device of claim 9, wherein the top electrode and the bottom electrode of one of the devices are connected via two columns having an oxide therebetween, whereby the top electrode receives support from the two columns.

一種磁力計裝置，其包括：一源，其用於產生一電流，該源安置於該磁力計裝置內；複數個共振元件，其鄰近於該源安置，其中僅該等共振元件中之一者連接至該源；複數個繞線導線，其鄰近於該等共振元件安置，其中該等繞線導線電連接該等共振元件以使得在連接至該源之該共振元件處施加之該電流沿一個方向穿過其餘共振元件傳播。 A magnetometer device comprising: a source for generating a current, the source being disposed within the magnetometer device; a plurality of resonant elements disposed adjacent to the source, wherein only one of the resonant elements Connected to the source; a plurality of wound wires disposed adjacent to the resonant elements, wherein the wound wires electrically connect the resonant elements such that when connected to the source The current applied at the resonant element propagates through the remaining resonant elements in one direction.

一種加速度計裝置，其包括：一感測電極，其安置於該加速度計裝置內；一共振元件，其鄰近於該感測電極安置，其中該共振元件包含圍繞介電材料之一內部核心安置之一屏蔽電極；其中量測該共振元件之一加速度以至該屏蔽電極與該感測電極之間的一電容變化。 An accelerometer device comprising: a sensing electrode disposed within the accelerometer device; a resonant element disposed adjacent to the sensing electrode, wherein the resonant element comprises an inner core disposed around one of the dielectric materials a shielding electrode; wherein an acceleration of one of the resonant elements is measured to a capacitance change between the shielding electrode and the sensing electrode.

一種晶片，其包括配置於一積體電路中之一微機電(MEMS)裝置，該晶片包括：電子元件，其形成於一半導體材料基板上；一互連層堆疊，其產生於該半導體材料基板上面，包含複數個導體材料層，每一層藉由一介電材料層分離；及該MEMS裝置，其藉由將氣態HF施加至該互連層堆疊而形成於該互連層堆疊內，其中該MEMS裝置包含圍繞介電材料之一內部核心安置之導體材料之一屏蔽電極。 A wafer comprising a microelectromechanical (MEMS) device disposed in an integrated circuit, the wafer comprising: an electronic component formed on a substrate of a semiconductor material; an interconnect layer stack formed on the substrate of the semiconductor material Above, comprising a plurality of layers of conductive material, each layer being separated by a layer of dielectric material; and the MEMS device formed in the stack of interconnect layers by applying gaseous HF to the stack of interconnect layers, wherein The MEMS device includes one of the conductor materials disposed around the inner core of one of the dielectric materials.