TW201318192A - Method for manufacturing solar cell with back contact - Google Patents

Method for manufacturing solar cell with back contact Download PDF

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Publication number
TW201318192A
TW201318192A TW100138544A TW100138544A TW201318192A TW 201318192 A TW201318192 A TW 201318192A TW 100138544 A TW100138544 A TW 100138544A TW 100138544 A TW100138544 A TW 100138544A TW 201318192 A TW201318192 A TW 201318192A
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substrate
glue
protective layer
solar cell
passivation protective
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TW100138544A
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Chinese (zh)
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TWI435465B (en
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Jung-Wu Chien
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Inventec Solar Energy Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

A method for manufacturing solar cell with back contact includes the following steps. A substrate is provided, wherein the substrate includes a front side and a back side opposite to the front side. Then, a first passivation layer is formed on the back side of the substrate. Next, a first adhesive is coated on the first passivation layer for forming a predetermined pattern thereon, wherein the first adhesive is a non-metallic adhesive. Afterward, a second adhesive is formed to cover the first adhesive, wherein the second adhesive is a metallic adhesive. Then, the first adhesive and the second adhesive are co-fired to let the first adhesive and portions of the second adhesive stacked on the first adhesive pass through the first passivation layer to electrically connect to the substrate. The method is simplified.

Description

具有背面電極之太陽能電池的製造方法Method for manufacturing solar cell with back electrode

本發明是有關於一種太陽能電池的製造方法，且特別是有關於一種具有背面電極之太陽能電池的製造方法。The present invention relates to a method of fabricating a solar cell, and more particularly to a method of fabricating a solar cell having a back electrode.

太陽能電池由於具有節能、環保等優點，已得到越來越多的關注，所以業界已投入大量的人力物力來進行太陽能電池的開發。Solar cells have received more and more attention due to their advantages of energy saving and environmental protection. Therefore, the industry has invested a lot of manpower and resources to develop solar cells.

然而，現階段研製出的太陽能電池普遍價格較高，其成為影響太陽能電池普及化的一個重要因素。因此，降低售價就成為太陽能電池產業的一個迫切需求。其中，設法降低太陽能電池的生產成本為達成降低售價的一種途徑，而簡化製造流程則可有效的降低生產成本。However, the solar cells developed at this stage are generally expensive, and they have become an important factor affecting the popularization of solar cells. Therefore, lowering the selling price has become an urgent need in the solar cell industry. Among them, trying to reduce the production cost of solar cells is one way to achieve a lower selling price, and simplifying the manufacturing process can effectively reduce the production cost.

美國專利公開第2011/0120552號揭露一種比較簡單的太陽能電池的生產方法，其藉由低壓化學氣相沉積(low pressure chemical vapor deposition)或電漿增強化學氣相沉積等方法在矽晶圓的背面沉積一層介電層。接著，利用雷射蝕刻或電漿蝕刻等方式移除部分介電層，以在介電層上形成開口。之後，在矽晶圓背面的開口內沉積導電材料。然後，進行燒結製程，以在矽晶圓的背面形成接觸電極。U.S. Patent Publication No. 2011/0120552 discloses a relatively simple method of producing a solar cell by means of low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition on the back side of a germanium wafer. A dielectric layer is deposited. Next, a portion of the dielectric layer is removed by laser etching or plasma etching to form an opening in the dielectric layer. Thereafter, a conductive material is deposited in the opening on the back side of the germanium wafer. Then, a sintering process is performed to form contact electrodes on the back surface of the germanium wafer.

此種方法雖能降低太陽能電池的生產成本，但需要利用雷射蝕刻或者電漿蝕刻的方式先在介電層上形成開口，之後才能在開口內沉積金屬材料以形成接觸電極。因此，在製程步驟上仍不夠精簡，具有改進空間。Although this method can reduce the production cost of the solar cell, it is necessary to form an opening on the dielectric layer by laser etching or plasma etching before depositing a metal material in the opening to form a contact electrode. Therefore, the process steps are still not streamlined and there is room for improvement.

本發明提供一種製程簡單的太陽能電池的生產方法。The invention provides a method for producing a solar cell with simple process.

為達上述優點，本發明提出一種具有背面電極之太陽能電池的製造方法，包括：提供一基板，基板具有一正面以及一背面，正面與背面相對；於基板之背面形成一第一鈍化保護層；於第一鈍化保護層上塗佈一第一膠，以於第一鈍化保護層上形成一預定圖案，且第一膠為非金屬膠；形成覆蓋第一膠的一第二膠，第二膠含金屬成分；以及燒結第一膠與第二膠，使第一膠與第二膠之疊置於第一膠的部分貫穿第一鈍化保護層而電性連接至基板。In order to achieve the above advantages, the present invention provides a method for fabricating a solar cell having a back electrode, comprising: providing a substrate having a front surface and a back surface opposite to the back surface; and forming a first passivation protective layer on the back surface of the substrate; Applying a first glue on the first passivation protective layer to form a predetermined pattern on the first passivation protective layer, and the first glue is a non-metal glue; forming a second glue covering the first glue, and the second glue And containing a metal component; and sintering the first glue and the second glue, so that a portion of the first glue and the second glue stacked on the first glue penetrates the first passivation protective layer to be electrically connected to the substrate.

在本發明之一實施例中，上述之第一膠的成分包括玻璃粉、摻雜矽、樹酯及溶劑。In an embodiment of the invention, the composition of the first glue comprises glass frit, doped cerium, resin, and solvent.

在本發明之一實施例中，上述之第二膠所含金屬包括鋁和銀至少其中之一。In an embodiment of the invention, the metal contained in the second glue comprises at least one of aluminum and silver.

在本發明之一實施例中，上述之基板為矽基板。In an embodiment of the invention, the substrate is a germanium substrate.

在本發明之一實施例中，在塗佈第一膠之前，更包括於第一鈍化保護層上形成至少一匯流條，預定圖案包括形成於匯流條旁的多個點狀圖案，而第二膠更接觸匯流條。In an embodiment of the present invention, before the coating the first glue, further comprising forming at least one bus bar on the first passivation protective layer, the predetermined pattern comprising a plurality of dot patterns formed beside the bus bar, and the second The glue is more in contact with the bus bar.

在本發明之一實施例中，上述之具有背面電極之太陽能電池的製造方法，更包括：於基板之正面形成一抗反射膜；以及於抗反射膜上形成一正面電極，正面電極於燒結第一膠與第二膠的步驟中貫穿抗反射膜而電性連接至基板。In an embodiment of the present invention, the method for manufacturing a solar cell having a back electrode further includes: forming an anti-reflection film on a front surface of the substrate; and forming a front electrode on the anti-reflection film, and the front electrode is sintered The step of a glue and the second glue is electrically connected to the substrate through the anti-reflection film.

在本發明之一實施例中，上述之具有背面電極之太陽能電池的製造方法，更包括：對基板的正面進行一擴散製程，以形成一射極區；以及於基板的正面形成一第二鈍化保護層，而抗反射膜形成於第二鈍化保護層上。In an embodiment of the invention, the method for manufacturing a solar cell having a back electrode further includes: performing a diffusion process on the front surface of the substrate to form an emitter region; and forming a second passivation on the front surface of the substrate The protective layer is formed, and the anti-reflection film is formed on the second passivation protective layer.

在本發明之一實施例中，上述之第一鈍化保護層與第二鈍化保護層在同一製程中形成。In an embodiment of the invention, the first passivation protective layer and the second passivation protective layer are formed in the same process.

在本發明之一實施例中，上述之擴散製程包括磷擴散製程，且在進行擴散製程時，基板的正面更形成有一磷矽玻璃層，而在形成第二鈍化保護層之前更包括移除磷矽玻璃層。In an embodiment of the invention, the diffusion process includes a phosphorus diffusion process, and a surface of the substrate is further formed with a phosphorous glass layer during the diffusion process, and the phosphorus is removed before the second passivation protection layer is formed. Glass layer.

在本發明之一實施例中，在形成第一鈍化保護層之前更包括對基板的正面進行一第一離子植入製程，以形成一射極區，而形成第一鈍化保護層的方法包括對基板進行一退火製程，在進行退火製程時，基板的背面形成第一鈍化保護層，且基板的正面形成一第二鈍化保護層。In an embodiment of the present invention, before forming the first passivation protective layer, further comprising performing a first ion implantation process on the front surface of the substrate to form an emitter region, and the method for forming the first passivation protective layer includes The substrate is subjected to an annealing process. When the annealing process is performed, a first passivation protective layer is formed on the back surface of the substrate, and a second passivation protective layer is formed on the front surface of the substrate.

在本發明之一實施例中，在進行退火製程之前更包括對基板的背面進行一第二離子植入製程，以於基板的背面形成一背面電場。In an embodiment of the invention, before performing the annealing process, a second ion implantation process is performed on the back surface of the substrate to form a back surface electric field on the back surface of the substrate.

在本發明之一實施例中，上述之射極區為選擇性射極區。In an embodiment of the invention, the emitter region is a selective emitter region.

在本發明之一實施例中，在形成第一鈍化保護層之前更包括：對基板的正面進行一第一離子植入製程，以形成一正面電場；對基板的背面進行一第二離子植入製程，以形成一射極區；以及對基板的背面進行一第三離子植入製程，以形成一基極區，其中形成第一鈍化保護層的方法包括對基板進行一退火製程，在進行退火製程時，基板的背面形成上述第一鈍化保護層。In an embodiment of the present invention, before forming the first passivation protective layer, the method further comprises: performing a first ion implantation process on the front surface of the substrate to form a front electric field; and performing a second ion implantation on the back surface of the substrate. a process for forming an emitter region; and performing a third ion implantation process on the back surface of the substrate to form a base region, wherein the method of forming the first passivation protective layer comprises performing an annealing process on the substrate for annealing In the process, the first passivation protective layer is formed on the back surface of the substrate.

在本發明之一實施例中，上述之射極區包括多個第一區塊，基極區包括多個第二區塊，些第一區塊與些第二區塊間隔排列，預定圖案包括形成於每一第一區塊及每一第二區塊的多個點狀圖案，第二膠包括覆蓋些第一區塊的多個第一膠條、覆蓋些第二區塊的多個第二膠條、連接些第一膠條的一第一連接圖案以及連接些第二膠條的一第二連接圖案。In an embodiment of the invention, the emitter region includes a plurality of first blocks, and the base region includes a plurality of second blocks, and the first blocks are spaced apart from the second blocks, and the predetermined pattern includes a plurality of dot patterns formed on each of the first block and each of the second blocks, the second glue comprising a plurality of first strips covering the first blocks and a plurality of the second blocks covering the second blocks a second strip, a first connecting pattern connecting the first strips and a second connecting pattern connecting the second strips.

在本發明之一實施例中，提供基板的步驟更包括對基板進行表面處理及絨面化，以降低光的反射。In an embodiment of the invention, the step of providing a substrate further comprises surface treating and sueding the substrate to reduce reflection of light.

在本發明之具有背面電極之太陽能電池的製造方法中，利用燒結的方式使不含金屬成分的第一膠和含金屬成分的第二膠之疊置於第一膠的部分貫穿第一鈍化保護層而電性連接至基板，使得本發明之太陽能電池的製造方法無需進行在第一鈍化保護層上形成開口的製程，因而能有效降低了太陽能電池的製造成本。In the manufacturing method of the solar cell having the back electrode of the present invention, the first passivation protection is performed by the portion of the first glue containing the metal component and the second glue containing the metal component being placed on the first glue by sintering. The layer is electrically connected to the substrate, so that the manufacturing method of the solar cell of the present invention eliminates the need to perform a process of forming an opening on the first passivation protective layer, thereby effectively reducing the manufacturing cost of the solar cell.

為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。The above and other objects, features and advantages of the present invention will become more <RTIgt;

圖1A至圖1J為本發明第一實施例之一種具有背面電極之太陽能電池的製造方法之流程示意圖。參閱圖1A至圖1J，本實施例之具有背面電極之太陽能電池的製造方法包括以下步驟。1A to 1J are schematic flow charts showing a method of manufacturing a solar cell having a back electrode according to a first embodiment of the present invention. Referring to FIGS. 1A to 1J, a method of manufacturing a solar cell having a back electrode of the present embodiment includes the following steps.

首先，如圖1A所示，提供一基板10。本實施例中，所提供的基板10為矽基板，其具有一正面10a以及與正面10a相對的一背面10b。此提供基板10的步驟可更包括對基板10進行表面處理(Saw Damage Etching，SDE)及絨面化(Texturing)，以處理掉基板10表面的切片損傷，並在基板10表面形成細微凹凸(紋路)，以減少光反射率。First, as shown in FIG. 1A, a substrate 10 is provided. In the present embodiment, the substrate 10 is provided as a ruthenium substrate having a front surface 10a and a back surface 10b opposite to the front surface 10a. The step of providing the substrate 10 may further include performing surface treatment (Saw Damage Etching, SDE) and texturing on the substrate 10 to treat the slice damage on the surface of the substrate 10 and forming fine irregularities on the surface of the substrate 10 (texture) ) to reduce the light reflectance.

接著，如圖1B所示，對基板10的正面10a進行一擴散製程，以形成一射極區11。擴散製程可為磷擴散製程，而在進行磷擴散製程時，除了會使磷原子擴散至基板10內，還會在基板10的正面10a形成有一磷矽玻璃層12(Phospho Silitate Glass,PSG)。因此，需要另外移除磷矽玻璃層12，以形成如圖1C所示之結構。Next, as shown in FIG. 1B, a diffusion process is performed on the front surface 10a of the substrate 10 to form an emitter region 11. The diffusion process may be a phosphorus diffusion process, and in the process of performing the phosphorus diffusion process, in addition to diffusing phosphorus atoms into the substrate 10, a Phospho Silicate Glass 12 (PSG) is formed on the front surface 10a of the substrate 10. Therefore, the phosphorous glass layer 12 needs to be additionally removed to form a structure as shown in FIG. 1C.

接著，如圖1D所示，於基板10的背面10b形成一第一鈍化保護層13，並於基板10的正面10a形成一第二鈍化保護層14。本實施例之第一鈍化保護層13和第二鈍化保護層14為氧化物膜，如二氧化矽膜、二氧化鈦膜、氧化鋅膜、氧化鋁膜或氧化錫膜，但不限於此，鈍化保護層還可以為氮化物膜等。本實施例係在同一製程中同時形成第一鈍化保護層13和第二鈍化保護層14，可以理解地，在本發明的其它實施例中，第一鈍化保護層13及第二鈍化保護層14可在不同步驟中形成。Next, as shown in FIG. 1D, a first passivation protective layer 13 is formed on the back surface 10b of the substrate 10, and a second passivation protective layer 14 is formed on the front surface 10a of the substrate 10. The first passivation protective layer 13 and the second passivation protective layer 14 of the present embodiment are oxide films, such as a hafnium oxide film, a titanium dioxide film, a zinc oxide film, an aluminum oxide film or a tin oxide film, but are not limited thereto, and passivation protection The layer may also be a nitride film or the like. In this embodiment, the first passivation protective layer 13 and the second passivation protective layer 14 are simultaneously formed in the same process. It is understood that in other embodiments of the present invention, the first passivation protective layer 13 and the second passivation protective layer 14 are Can be formed in different steps.

然後，如圖1E所示，於基板10之正面10a形成一抗反射膜15(Anti-reflection Coating，ARC)。抗反射膜15之材料可以包含氮化矽，但不限於此。在另一實施例中，抗反射膜15亦可省略。Then, as shown in FIG. 1E, an anti-reflection coating 15 (ARC) is formed on the front surface 10a of the substrate 10. The material of the anti-reflection film 15 may include tantalum nitride, but is not limited thereto. In another embodiment, the anti-reflection film 15 may also be omitted.

接著，如圖1F所示，利用網印或其他方式於第一鈍化保護層13上形成至少一匯流條16(busbar)。圖1F是以多個匯流排16為例，且這些匯流條16相互間隔設置。Next, as shown in FIG. 1F, at least one busbar 16 is formed on the first passivation protective layer 13 by screen printing or other means. FIG. 1F is an example of a plurality of bus bars 16, and these bus bars 16 are spaced apart from each other.

然後，如圖1G所示，於第一鈍化保護層13上塗佈一第一膠17，以於第一鈍化保護層13上形成一預定圖案。塗佈之後可以採用烘烤或其他方式來乾燥、定型第一膠17，以利後續製程之進行。本實施例中，第一膠17為非金屬膠，其可以包括玻璃粉(glass frit)、摻雜矽、溶劑以及樹脂等，但不限於此。預定圖案可以包括形成於匯流條16旁的多個點狀圖案(如圖2所示)，預定圖案亦可為線狀圖案，但不限於此。Then, as shown in FIG. 1G, a first paste 17 is coated on the first passivation protective layer 13 to form a predetermined pattern on the first passivation protective layer 13. After coating, the first glue 17 can be dried or shaped by baking or other means to facilitate the subsequent process. In this embodiment, the first glue 17 is a non-metal glue, which may include glass frit, doped yttrium, solvent, resin, etc., but is not limited thereto. The predetermined pattern may include a plurality of dot patterns (shown in FIG. 2) formed beside the bus bar 16, and the predetermined pattern may also be a line pattern, but is not limited thereto.

接著，如圖1H所示，形成覆蓋第一膠17的一第二膠18。第二膠18可利用網印或塗佈方式形成，且網印或塗佈之後可以採用烘烤或其他方式來乾燥、定型第二膠18。本實施例中，第二膠18含金屬成分，其所含金屬可以包括鋁和銀中至少其中之一。如圖2所示，第二膠18全面覆蓋第一膠17，而接觸匯流條16。Next, as shown in FIG. 1H, a second glue 18 covering the first glue 17 is formed. The second glue 18 can be formed by screen printing or coating, and the second glue 18 can be dried or shaped by baking or other means after screen printing or coating. In this embodiment, the second glue 18 contains a metal component, and the metal contained therein may include at least one of aluminum and silver. As shown in FIG. 2, the second glue 18 completely covers the first glue 17, and contacts the bus bar 16.

然後，如圖1I所示，以網印方式或其他方法於抗反射膜15上形成至少一正面電極19。本實施例中，正面電極19例如為金屬電極。Then, as shown in FIG. 1I, at least one front electrode 19 is formed on the anti-reflection film 15 by screen printing or the like. In the present embodiment, the front surface electrode 19 is, for example, a metal electrode.

之後，如圖1J所示，燒結第一膠17與第二膠18，使第一膠17與第二膠18之疊置於第一膠17的部分貫穿第一鈍化保護層13而電性連接至基板10。此外，在進行燒結製程時，正面電極19亦貫穿抗反射膜15和第二鈍化保護層14而電性連接至基板10。Then, as shown in FIG. 1J, the first glue 17 and the second glue 18 are sintered, so that the portion of the first glue 17 and the second glue 18 stacked on the first glue 17 is electrically connected through the first passivation protective layer 13. To the substrate 10. In addition, the front electrode 19 is also electrically connected to the substrate 10 through the anti-reflection film 15 and the second passivation protective layer 14 during the sintering process.

上述僅為本發明的一個實施例，可以理解地，在本發明的其它實施例中，第一實施例的其中一些步驟的順序可以調換(例如，於抗反射膜上形成正面電極的步驟可以緊跟形成抗反射膜的步驟之後且在形成匯流條的步驟之前，或者是緊跟形成匯流條的步驟且在塗佈一第一膠的步驟之前)，只要不改變各元件的位置關係，並且前面的步驟不會影響後面步驟的進行即可。The foregoing is only one embodiment of the present invention. It can be understood that in other embodiments of the present invention, the order of some of the steps of the first embodiment may be reversed (for example, the step of forming a front electrode on the anti-reflection film may be tight. After the step of forming the anti-reflection film and before the step of forming the bus bar, or immediately following the step of forming the bus bar and before the step of coating a first glue, as long as the positional relationship of each element is not changed, and the front The steps will not affect the subsequent steps.

圖3A至圖3J為本發明第二實施例之一種具有背面電極之太陽能電池的製造方法的流程示意圖。參閱圖3A至圖3J，本實施例之具有背面電極之太陽能電池的製造方法包括以下步驟。3A to 3J are schematic flow charts showing a method of manufacturing a solar cell having a back electrode according to a second embodiment of the present invention. Referring to FIGS. 3A to 3J, the method of manufacturing a solar cell having a back electrode of the present embodiment includes the following steps.

首先，如圖3A所示，提供一具有正面20a與背面20b的基板20，並對基板20進行表面處理及絨面化。First, as shown in FIG. 3A, a substrate 20 having a front surface 20a and a back surface 20b is provided, and the substrate 20 is surface-treated and textured.

接著，如圖3B所示，對基板20的正面20a進行一第一離子植入製程，以形成一射極區21。本實施例中，第一離子例如為磷離子。所形成的射極區21可以為選擇性射極區，但不限於此。其中，選擇性射極區包括離子濃度較高的重度摻雜區21a及重度摻雜區21a旁的輕度摻雜區21b。Next, as shown in FIG. 3B, a first ion implantation process is performed on the front surface 20a of the substrate 20 to form an emitter region 21. In this embodiment, the first ion is, for example, a phosphorus ion. The formed emitter region 21 may be a selective emitter region, but is not limited thereto. The selective emitter region includes a heavily doped region 21a having a higher ion concentration and a lightly doped region 21b adjacent to the heavily doped region 21a.

然後，如圖3C所示，對基板20的背面20b進行一第二離子植入製程，以於基板20的背面20b形成一背面電場22。本實施例中，第二離子例如為硼離子。Then, as shown in FIG. 3C, a second ion implantation process is performed on the back surface 20b of the substrate 20 to form a back surface electric field 22 on the back surface 20b of the substrate 20. In this embodiment, the second ion is, for example, a boron ion.

接著，如圖3D所示，對基板20進行一退火製程，在進行退火製程時，基板20的背面20b形成一第一鈍化保護層23，且基板20的正面20a形成一第二鈍化保護層24。本實施例之第一鈍化保護層23和第二鈍化保護層24為氧化物膜，如二氧化矽膜、二氧化鈦膜、氧化鋅膜、氧化鋁膜或氧化錫膜，但不限於此，鈍化保護層還可以為氮化物膜。Next, as shown in FIG. 3D, an annealing process is performed on the substrate 20. When the annealing process is performed, the back surface 20b of the substrate 20 is formed with a first passivation protective layer 23, and the front surface 20a of the substrate 20 is formed with a second passivation protective layer 24. . The first passivation protective layer 23 and the second passivation protective layer 24 of the embodiment are oxide films, such as a hafnium oxide film, a titanium dioxide film, a zinc oxide film, an aluminum oxide film or a tin oxide film, but are not limited thereto, and passivation protection The layer can also be a nitride film.

然後，如圖3E所示，於基板20之正面20a形成一抗反射膜25。此抗反射膜25例如是覆蓋第二鈍化保護層24。抗反射膜25之材料可以包含氮化矽，但不限於此。在另一實施例中，抗反射膜25亦可省略。Then, as shown in FIG. 3E, an anti-reflection film 25 is formed on the front surface 20a of the substrate 20. This anti-reflection film 25 covers, for example, the second passivation protective layer 24. The material of the anti-reflection film 25 may include tantalum nitride, but is not limited thereto. In another embodiment, the anti-reflection film 25 may also be omitted.

接著，如圖3F所示，利用網印或其他方式於第一鈍化保護層23上形成至少一匯流條26。圖3F是以多個匯流條26為例，且這些匯流條26相互間隔設置。Next, as shown in FIG. 3F, at least one bus bar 26 is formed on the first passivation protective layer 23 by screen printing or the like. FIG. 3F is an example of a plurality of bus bars 26, and these bus bars 26 are spaced apart from each other.

然後，如圖3G所示，於第一鈍化保護層23上塗佈一第一膠27，以於第一鈍化保護層23上形成一預定圖案。塗佈之後可以採用烘烤等方式來乾燥、定型第一膠27，以利後續製程之進行。本實施例中，第一膠27為非金屬膠，其可以包括玻璃粉、摻雜矽、溶劑以及樹脂等，但不限於此。預定圖案可以包括形成於匯流條26旁的多個點狀圖案(如圖2所示)，預定圖案亦可為線狀圖案，但不限於此。Then, as shown in FIG. 3G, a first paste 27 is coated on the first passivation protective layer 23 to form a predetermined pattern on the first passivation protective layer 23. After coating, the first glue 27 can be dried and shaped by baking or the like to facilitate the subsequent process. In the embodiment, the first glue 27 is a non-metal glue, which may include glass powder, doped yttrium, solvent, resin, etc., but is not limited thereto. The predetermined pattern may include a plurality of dot patterns (shown in FIG. 2) formed beside the bus bar 26, and the predetermined pattern may also be a line pattern, but is not limited thereto.

接著，如圖3H所示，形成覆蓋第一膠27的一第二膠28。第二膠28網印或塗佈之後可以採用烘烤等方式來乾燥、定型第二膠28。本實施例中，第二膠28含金屬成分，其所含金屬可以包括鋁和銀中至少其中之一。如圖2所示，第二膠28全面覆蓋第一膠27，且接觸匯流條26。Next, as shown in FIG. 3H, a second glue 28 covering the first glue 27 is formed. After the second glue 28 is screen printed or coated, the second glue 28 may be dried and shaped by baking or the like. In this embodiment, the second glue 28 contains a metal component, and the metal contained therein may include at least one of aluminum and silver. As shown in FIG. 2, the second glue 28 completely covers the first glue 27 and contacts the bus bar 26.

然後，如圖3I所示，以網印方式或其他方式於抗反射膜25上形成至少一正面電極29。本實施例中，正面電極29為金屬電極，且正面電極29形成於重摻雜區21a上。Then, as shown in FIG. 3I, at least one front surface electrode 29 is formed on the anti-reflection film 25 by screen printing or the like. In the present embodiment, the front surface electrode 29 is a metal electrode, and the front surface electrode 29 is formed on the heavily doped region 21a.

之後，如圖3J所示，燒結第一膠27與第二膠28，使第一膠27與第二膠28之疊置於第一膠27的部分貫穿第一鈍化保護層23而電性連接至基板20。此外，在進行燒結製程時，正面電極29亦貫穿抗反射膜25和第二鈍化保護層24而電性連接至基板20。Then, as shown in FIG. 3J, the first glue 27 and the second glue 28 are sintered, and the portion of the first glue 27 and the second glue 28 stacked on the first glue 27 is electrically connected through the first passivation protective layer 23. To the substrate 20. In addition, the front electrode 29 is also electrically connected to the substrate 20 through the anti-reflection film 25 and the second passivation protective layer 24 during the sintering process.

上述僅為本發明的一個實施例，可以理解地，在本發明的其它實施例中，第二實施例的其中一些步驟的順序可以調換，只要不改變各元件的位置關係，並且前面的步驟不會影響後面步驟的進行即可。The foregoing is only one embodiment of the present invention. It can be understood that in other embodiments of the present invention, the order of some of the steps of the second embodiment may be reversed as long as the positional relationship of each component is not changed, and the previous steps are not Will affect the progress of the following steps.

圖4A至圖4I為本發明第三實施例之一種具有背面電極之太陽能電池的製造方法的流程示意圖。參閱圖4A至圖4I，本實施例之具有背面電極之太陽能電池的製造方法包括以下步驟：首先，如圖4A所示，提供一具有正面30a與背面30b的基板30，並對基板30進行表面處理及絨面化。4A to 4I are schematic flow charts showing a method of manufacturing a solar cell having a back electrode according to a third embodiment of the present invention. Referring to FIG. 4A to FIG. 4I, the method for manufacturing a solar cell having a back electrode of the present embodiment includes the following steps. First, as shown in FIG. 4A, a substrate 30 having a front surface 30a and a back surface 30b is provided, and the surface of the substrate 30 is surfaced. Treatment and suedeing.

接著，如圖4B所示，對基板30的正面30a進行一第一離子植入製程，以形成一正面電場(front surface field)31。本實施例中，第一離子例如為磷離子。Next, as shown in FIG. 4B, a first ion implantation process is performed on the front surface 30a of the substrate 30 to form a front surface field 31. In this embodiment, the first ion is, for example, a phosphorus ion.

然後，如圖4C所示，對基板30的背面30b進行一第二離子植入製程，以形成一射極區32。本實施例中，第二離子例如為磷離子。射極區32包括多個條狀的第一區塊32a，如圖5A所示。Then, as shown in FIG. 4C, a second ion implantation process is performed on the back surface 30b of the substrate 30 to form an emitter region 32. In this embodiment, the second ion is, for example, a phosphorus ion. The emitter region 32 includes a plurality of strip-shaped first blocks 32a as shown in FIG. 5A.

接著，如圖4D所示，對基板30的背面30b進行一第三離子植入製程，以形成一基極區33。本實施例中，第三離子例如為硼離子。基極區33包括多個條狀的第二區塊33a，這些第二區塊33a與第一區塊32a間隔排列，如圖5A所示。Next, as shown in FIG. 4D, a third ion implantation process is performed on the back surface 30b of the substrate 30 to form a base region 33. In this embodiment, the third ion is, for example, a boron ion. The base region 33 includes a plurality of strip-shaped second blocks 33a spaced apart from the first block 32a as shown in FIG. 5A.

然後，如圖4E所示，對基板30進行一退火製程，在進行退火製程時，基板30的背面30b形成一第一鈍化保護層34。本實施例之第一鈍化保護層34為氧化物膜，如二氧化矽膜、二氧化鈦膜、氧化鋅膜、氧化鋁膜或氧化錫膜，但不限於此，鈍化保護層還可以為氮化物膜。本實施例僅在基板30的背面30b形成第一鈍化保護層34，可以理解地，在本發明的其它實施例中，亦可同時在基板30的正面30a形成一第二鈍化保護層。Then, as shown in FIG. 4E, an annealing process is performed on the substrate 30. When the annealing process is performed, the back surface 30b of the substrate 30 forms a first passivation protective layer 34. The first passivation protective layer 34 of the present embodiment is an oxide film, such as a hafnium oxide film, a titanium dioxide film, a zinc oxide film, an aluminum oxide film or a tin oxide film, but is not limited thereto, and the passivation protective layer may also be a nitride film. . In this embodiment, the first passivation protective layer 34 is formed only on the back surface 30b of the substrate 30. It is understood that in other embodiments of the present invention, a second passivation protective layer may be simultaneously formed on the front surface 30a of the substrate 30.

接著，如圖4F所示，於基板30之正面30a形成一抗反射膜35(Anti-reflection Coating，ARC)。抗反射膜35之材料可以包含氮化矽，但不限於此。在另一實施例中，抗反射膜35亦可省略。Next, as shown in FIG. 4F, an anti-reflection coating 35 (ARC) is formed on the front surface 30a of the substrate 30. The material of the anti-reflection film 35 may include tantalum nitride, but is not limited thereto. In another embodiment, the anti-reflection film 35 may also be omitted.

然後，如圖4G所示，於第一鈍化保護層34上塗佈一第一膠36，以於第一鈍化保護層34上形成一預定圖案。塗佈之後可以採用烘烤或其他方式來乾燥、定型第一膠36，以利後續製程之進行。本實施例中，第一膠36為非金屬膠，其可以包括玻璃粉、摻雜矽、溶劑以及樹脂等，但不限於此。預定圖案包括形成於每一第一區塊32a及每一第二區塊33a的多個點狀圖案，如圖5B所示。Then, as shown in FIG. 4G, a first paste 36 is coated on the first passivation protective layer 34 to form a predetermined pattern on the first passivation protective layer 34. After coating, the first glue 36 may be dried or shaped by baking or other means to facilitate the subsequent process. In this embodiment, the first glue 36 is a non-metal glue, which may include glass powder, doped yttrium, solvent, resin, etc., but is not limited thereto. The predetermined pattern includes a plurality of dot patterns formed in each of the first block 32a and each of the second blocks 33a as shown in FIG. 5B.

接著，如圖4H所示，形成覆蓋第一膠36的一第二膠37。第二膠37可用網印或塗佈的方式形成，且在第二膠37網印或塗佈之後同樣可以採用烘烤或其他方式來乾燥、定型第二膠37。本實施例中，第二膠37含金屬成分，其所含金屬可以包括鋁和銀中至少其中之一。如圖5C所示，第二膠37包括覆蓋第一區塊32a的多個第一膠條37a、覆蓋第二區塊33a的多個第二膠條37b、連接這些第一膠條37a的一第一連接圖案37c以及連接這些第二膠條37b的一第二連接圖案37d。Next, as shown in FIG. 4H, a second glue 37 covering the first glue 36 is formed. The second glue 37 can be formed by screen printing or coating, and after the second glue 37 is screen printed or coated, the second glue 37 can also be dried or shaped by baking or other means. In this embodiment, the second glue 37 contains a metal component, and the metal contained therein may include at least one of aluminum and silver. As shown in FIG. 5C, the second glue 37 includes a plurality of first strips 37a covering the first block 32a, a plurality of second strips 37b covering the second block 33a, and a first strip 37a connecting the first strips 37a. The first connection pattern 37c and a second connection pattern 37d connecting the second strips 37b.

之後，如圖4I所示，燒結第一膠36與第二膠37，使第一膠36與第二膠37之疊置於第一膠36的部分貫穿第一鈍化保護層34而電性連接至基板30。Then, as shown in FIG. 4I, the first glue 36 and the second glue 37 are sintered, and the portion of the first glue 36 and the second glue 37 stacked on the first glue 36 is electrically connected through the first passivation protective layer 34. To the substrate 30.

需要說明的是，上述僅為本發明的一個實施例，可以理解地，在本發明的其它實施例中，第三實施例的其中一些步驟的順序可以調換，只要不改變各元件的位置關係，並且前面的步驟不會影響後面步驟的進行即可。此外，利用第三實施例之製造方法所生產出的太陽能電池中，基板30之正面30a無任何電極，以增加太陽能電池之正面的收光面積，進而提高太陽能電池的效率。It should be noted that the foregoing is only one embodiment of the present invention. It can be understood that, in other embodiments of the present invention, the order of some of the steps of the third embodiment may be reversed, as long as the positional relationship of each component is not changed. And the previous steps will not affect the subsequent steps. Further, in the solar cell produced by the manufacturing method of the third embodiment, the front surface 30a of the substrate 30 is free of any electrodes to increase the light-receiving area of the front surface of the solar cell, thereby improving the efficiency of the solar cell.

綜上所述，在本發明之具有背面電極之太陽能電池的製造方法中，利用燒結的方式使不含金屬成分的第一膠和含金屬成分的第二膠之疊置於第一膠的部分貫穿第一鈍化保護層而電性連接至基板，使得本發明之太陽能電池的製造方法無需進行在第一鈍化保護層上形成開口的製程，因而有效降低了太陽能電池的製造成本。In summary, in the method for fabricating a solar cell having a back electrode of the present invention, a portion of the first gel and the second component containing the metal component are stacked on the first gel by sintering. The method of manufacturing the solar cell of the present invention does not require a process of forming an opening on the first passivation protective layer, thereby effectively reducing the manufacturing cost of the solar cell.

另外，本發明中，第一膠和第二膠分別為非金屬膠和金屬膠，這樣在選取第一膠和第二膠的成分時可以僅考慮使其具有燒穿性能或導電性而不用同時滿足上述兩種性能，從而降低了第一膠和第二膠的複雜程度。In addition, in the present invention, the first glue and the second glue are respectively a non-metal glue and a metal glue, so that when the components of the first glue and the second glue are selected, only the burn-through property or the conductivity can be considered without using at the same time. The above two properties are satisfied, thereby reducing the complexity of the first glue and the second glue.

雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

10、20、30．．．基板10, 20, 30. . . Substrate

10a、20a、30a．．．正面10a, 20a, 30a. . . positive

10b、20b、30b．．．背面10b, 20b, 30b. . . back

11、21、32．．．射極區11, 21, 32. . . Emitter area

12．．．磷矽玻璃層12. . . Phosphorus glass layer

13、23、34．．．第一鈍化保護層13, 23, 34. . . First passivation protective layer

14、24．．．第二鈍化保護層14, 24. . . Second passivation protective layer

15、25、35．．．抗反射膜15, 25, 35. . . Anti-reflection film

16、26．．．匯流條16, 26. . . Bus bar

17、27、36．．．第一膠17, 27, 36. . . First glue

18、28、37．．．第二膠18, 28, 37. . . Second glue

19、29．．．正面電極19, 29. . . Front electrode

21a．．．重度摻雜區21a. . . Severely doped region

21b．．．輕度摻雜區21b. . . Lightly doped region

22．．．背面電場twenty two. . . Back surface electric field

31．．．正面電場31. . . Positive electric field

32a．．．第一區塊32a. . . First block

33．．．基極區33. . . Base area

33a．．．第二區塊33a. . . Second block

37a．．．第一膠條37a. . . First strip

37b．．．第二膠條37b. . . Second strip

37c．．．第一連接圖案37c. . . First connection pattern

37d．．．第二連接圖案37d. . . Second connection pattern

圖1A至圖1J為本發明第一實施例之一種具有背面電極之太陽能電池的製造方法之流程示意圖。1A to 1J are schematic flow charts showing a method of manufacturing a solar cell having a back electrode according to a first embodiment of the present invention.

圖2為圖1H的仰視示意圖。Figure 2 is a bottom plan view of Figure 1H.

圖3A至圖3J為本發明第二實施例之一種具有背面電極之太陽能電池的製造方法的流程示意圖。3A to 3J are schematic flow charts showing a method of manufacturing a solar cell having a back electrode according to a second embodiment of the present invention.

圖4A至圖4I為本發明第三實施例之一種具有背面電極之太陽能電池的製造方法的流程示意圖。4A to 4I are schematic flow charts showing a method of manufacturing a solar cell having a back electrode according to a third embodiment of the present invention.

圖5A為圖4D的仰視示意圖。Figure 5A is a bottom plan view of Figure 4D.

圖5B為圖4G的仰視示意圖。FIG. 5B is a bottom view of FIG. 4G.

圖5C為圖4H的仰視示意圖。Figure 5C is a bottom plan view of Figure 4H.

10．．．基板10. . . Substrate

11．．．射極區11. . . Emitter area

13．．．第一鈍化保護層13. . . First passivation protective layer

14．．．第二鈍化保護層14. . . Second passivation protective layer

15．．．抗反射膜15. . . Anti-reflection film

16．．．匯流條16. . . Bus bar

17．．．第一膠17. . . First glue

18．．．第二膠18. . . Second glue

19．．．正面電極19. . . Front electrode

Claims (15)

一種具有背面電極之太陽能電池的製造方法，包括：提供一基板，該基板具有一正面以及一背面，該正面與該背面相對；於該基板之該背面形成一第一鈍化保護層；於該第一鈍化保護層上塗佈一第一膠，以於該第一鈍化保護層上形成一預定圖案，且該第一膠為非金屬膠；形成覆蓋該第一膠的一第二膠，該第二膠含金屬成分；以及燒結該第一膠與該第二膠，使該第一膠與該第二膠之疊置於該第一膠的部分貫穿該第一鈍化保護層而電性連接至該基板。A method for manufacturing a solar cell having a back electrode, comprising: providing a substrate having a front surface and a back surface opposite to the back surface; forming a first passivation protective layer on the back surface of the substrate; Applying a first adhesive on the passivation protective layer to form a predetermined pattern on the first passivation protective layer, and the first glue is a non-metal glue; forming a second glue covering the first glue, the first The second glue contains a metal component; and the first glue and the second glue are sintered, and the portion of the first glue and the second glue placed on the first glue is electrically connected to the first passivation protective layer to The substrate. 如申請專利範圍第1項所述之具有背面電極之太陽能電池的製造方法，其中該第一膠的成分包括玻璃粉、摻雜矽、樹酯及溶劑。The method for manufacturing a solar cell having a back electrode according to claim 1, wherein the composition of the first gel comprises glass frit, doped cerium, a resin, and a solvent. 如申請專利範圍第1項所述之具有背面電極之太陽能電池的製造方法，其中該第二膠所含金屬包括鋁和銀至少其中之一。The method of manufacturing a solar cell having a back electrode according to claim 1, wherein the metal contained in the second paste comprises at least one of aluminum and silver. 如申請專利範圍第1項所述之具有背面電極之太陽能電池的製造方法，其中該基板為矽基板。A method of manufacturing a solar cell having a back electrode according to claim 1, wherein the substrate is a germanium substrate. 如申請專利範圍第1項所述之具有背面電極之太陽能電池的製造方法，其中在塗佈該第一膠之前，更包括於該第一鈍化保護層上形成至少一匯流條，該預定圖案包括形成於該匯流條旁的多個點狀圖案，而該第二膠更接觸該匯流條。The method for manufacturing a solar cell having a back electrode according to claim 1, wherein at least one bus bar is further formed on the first passivation protective layer before the coating the first paste, the predetermined pattern includes A plurality of dot patterns formed beside the bus bar, and the second glue further contacts the bus bar. 如申請專利範圍第5項所述之具有背面電極之太陽能電池的製造方法，更包括：於該基板之該正面形成一抗反射膜；以及於該抗反射膜上形成一正面電極，該正面電極於燒結該第一膠與該第二膠的步驟中貫穿該抗反射膜而電性連接至該基板。The method for manufacturing a solar cell having a back electrode according to claim 5, further comprising: forming an anti-reflection film on the front surface of the substrate; and forming a front electrode on the anti-reflection film, the front electrode The step of sintering the first glue and the second glue is electrically connected to the substrate through the anti-reflection film. 如申請專利範圍第6項所述之具有背面電極之太陽能電池的製造方法，更包括：對該基板的該正面進行一擴散製程，以形成一射極區；以及於該基板的該正面形成一第二鈍化保護層，而該抗反射膜形成於該第二鈍化保護層上。The method for manufacturing a solar cell having a back electrode according to claim 6, further comprising: performing a diffusion process on the front surface of the substrate to form an emitter region; and forming a front surface of the substrate A second passivation protective layer is formed on the second passivation protective layer. 如申請專利範圍第7項所述之具有背面電極之太陽能電池的製造方法，其中該第一鈍化保護層與該第二鈍化保護層在同一製程中形成。The method of manufacturing a solar cell having a back electrode according to claim 7, wherein the first passivation protective layer and the second passivation protective layer are formed in the same process. 如申請專利範圍第7項所述之具有背面電極之太陽能電池的製造方法，其中該擴散製程包括磷擴散製程，且在進行該擴散製程時，該基板的該正面更形成有一磷矽玻璃層，而在形成該第二鈍化保護層之前更包括移除該磷矽玻璃層。The method for manufacturing a solar cell having a back electrode according to claim 7, wherein the diffusion process comprises a phosphorus diffusion process, and a surface of the substrate is further formed with a phosphor glass layer when the diffusion process is performed. And further comprising removing the phosphor glass layer before forming the second passivation protective layer. 如申請專利範圍第5項所述之具有背面電極之太陽能電池的製造方法，其中在形成該第一鈍化保護層之前更包括對該基板的該正面進行一第一離子植入製程，以形成一射極區，而形成該第一鈍化保護層的方法包括對該基板進行一退火製程，在進行該退火製程時，該基板的該背面形成該第一鈍化保護層，且該基板的該正面形成一第二鈍化保護層。The method for manufacturing a solar cell having a back electrode according to claim 5, wherein before the forming the first passivation protective layer, further comprising performing a first ion implantation process on the front surface of the substrate to form a The method of forming the first passivation protective layer comprises: performing an annealing process on the substrate, wherein the back surface of the substrate forms the first passivation protective layer, and the front surface of the substrate is formed during the annealing process A second passivation protective layer. 如申請專利範圍第10項所述之具有背面電極之太陽能電池的製造方法，其中在進行該退火製程之前更包括對該基板的該背面進行一第二離子植入製程，以於該基板的該背面形成一背面電場。The method of manufacturing a solar cell having a back electrode according to claim 10, further comprising performing a second ion implantation process on the back surface of the substrate before performing the annealing process, A back surface electric field is formed on the back side. 如申請專利範圍第10項所述之具有背面電極之太陽能電池的製造方法，其中該射極區為選擇性射極區。The method of manufacturing a solar cell having a back electrode according to claim 10, wherein the emitter region is a selective emitter region. 如申請專利範圍第1項所述之具有背面電極之太陽能電池的製造方法，在形成該第一鈍化保護層之前更包括：對該基板的該正面進行一第一離子植入製程，以形成一正面電場；對該基板的該背面進行一第二離子植入製程，以形成一射極區；以及對該基板的該背面進行一第三離子植入製程，以形成一基極區，其中形成該第一鈍化保護層的方法包括對該基板進行一退火製程，在進行該退火製程時，該基板的該背面形成該第一鈍化保護層。The method for manufacturing a solar cell having a back electrode according to claim 1, further comprising: performing a first ion implantation process on the front surface of the substrate to form a first passivation protective layer a front side electric field; performing a second ion implantation process on the back surface of the substrate to form an emitter region; and performing a third ion implantation process on the back surface of the substrate to form a base region, wherein the formation The method of first passivating a protective layer includes performing an annealing process on the substrate, and forming the first passivation protective layer on the back surface of the substrate during the annealing process. 如申請專利範圍第13項所述之具有背面電極之太陽能電池的製造方法，其中該射極區包括多個第一區塊，該基極區包括多個第二區塊，該些第一區塊與該些第二區塊間隔排列，該預定圖案包括形成於每一第一區塊及每一第二區塊的多個點狀圖案，該第二膠包括覆蓋該些第一區塊的多個第一膠條、覆蓋該些第二區塊的多個第二膠條、連接該些第一膠條的一第一連接圖案以及連接該些第二膠條的一第二連接圖案。The method of manufacturing a solar cell having a back electrode according to claim 13, wherein the emitter region comprises a plurality of first blocks, and the base region comprises a plurality of second blocks, the first regions The block is spaced apart from the second blocks, the predetermined pattern includes a plurality of dot patterns formed on each of the first block and each of the second blocks, and the second glue includes a cover of the first blocks a plurality of first strips, a plurality of second strips covering the second blocks, a first connecting pattern connecting the first strips, and a second connecting pattern connecting the second strips. 如申請專利範圍第1項所述之具有背面電極之太陽能電池的製造方法，其中提供該基板的步驟更包括對該基板進行表面處理及絨面化。The method for manufacturing a solar cell having a back electrode according to claim 1, wherein the step of providing the substrate further comprises surface treating and sueding the substrate.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI625864B (en) * 2016-06-27 2018-06-01 Method for preparing crystalline silicon solar cell suede structure
CN108183140A (en) * 2018-01-22 2018-06-19 卢泰 It is a kind of for metal electrode of flexible thin-film solar cell and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI625864B (en) * 2016-06-27 2018-06-01 Method for preparing crystalline silicon solar cell suede structure
US10411145B2 (en) 2016-06-27 2019-09-10 Csi Cells Co., Ltd. Method for producing a textured structure of a crystalline silicon solar cell
CN108183140A (en) * 2018-01-22 2018-06-19 卢泰 It is a kind of for metal electrode of flexible thin-film solar cell and preparation method thereof

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