TW201316228A - Touch sensing structure and manufacturing method thereof - Google Patents
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本發明為一種觸控感測結構及其製造方法，提供一種可提升觸控面板光學性能與靈敏度之觸控感測結構，並且可大幅提升觸控感測結構之生產良率。The invention provides a touch sensing structure and a manufacturing method thereof, and provides a touch sensing structure capable of improving the optical performance and sensitivity of the touch panel, and can greatly improve the production yield of the touch sensing structure.
按，目前坊間之觸控面板(Touch Panel)的觸控輸入方式，包括有電阻式、電容式、光學式、電磁感應式、音波感應式等；其中，電阻式及電容式是藉由使用者以手指或感應筆對面板表面進行觸碰，而於受觸碰位置的面板內部產生電容值的變化，據以偵測出面板表面所接受觸碰的位置，以達到觸控感測之目的。According to the current touch panel input mode, including resistive, capacitive, optical, electromagnetic induction, sonic induction, etc.; Touching the surface of the panel with a finger or a sensor pen, and generating a change in the capacitance value inside the panel subjected to the touched position, thereby detecting the position of the touched surface of the panel to achieve the purpose of touch sensing.
且知，為了要偵測出使用者以手指或感應筆觸碰於觸控板上之位置，業者研發出各種不同之電容式觸碰感測結構。習知之電容式觸控面板的感應電極係由複數感測結構排列而成之感測陣列，其中各感測結構多以氧化銦錫(ITO)為材料設計為具有規則形狀(例如：鑽石圖形)之感測單元，由於感測結構大多由ITO所製成。當ITO阻抗較大時，將導致觸碰感測結構之信號傳遞靈敏度難以提升。大多數軟性導電基材的ITO面阻值均在150歐姆/□以上，由於軟性導電基材所使用的基板多為塑膠材質，例如PET，其耐熱溫度均無法與玻璃基材比擬，而無法使用高溫退火方式將ITO結晶化，使得軟性導電基材之面阻值無法下降。然而在玻璃基板上的ITO雖然可使用高溫退火製程來結晶化，以降低ITO面阻值，但生產製程卻也是相當耗時與耗能。Moreover, in order to detect that the user touches the position on the touch panel with a finger or a sensor pen, the manufacturer has developed various capacitive touch sensing structures. A sensing electrode of a conventional capacitive touch panel is a sensing array in which a plurality of sensing structures are arranged, wherein each sensing structure is designed with indium tin oxide (ITO) as a regular shape (for example, a diamond pattern). The sensing unit is mostly made of ITO because the sensing structure. When the ITO impedance is large, the signal transmission sensitivity of the touch sensing structure is difficult to increase. Most of the flexible conductive substrates have an ITO surface resistance of 150 ohms/□ or more. Since the substrates used for the flexible conductive substrates are mostly made of plastic materials, such as PET, the heat resistance temperature cannot be compared with the glass substrate, and cannot be used. The high temperature annealing method crystallizes the ITO so that the surface resistance of the soft conductive substrate cannot be lowered. However, although the ITO on the glass substrate can be crystallized using a high-temperature annealing process to reduce the ITO surface resistance value, the production process is also quite time consuming and energy consuming.
而另種習知之電容式觸控面板的感應電極係為複數金屬線構成之金屬網狀感測結構，相較於ITO該金屬材質之網狀感測結構的阻抗較低；惟，在這樣的設計中，容易因金屬線因製程上產生斷線的問題，而使感測結構的電性連接中斷，而導致斷路。The sensing electrode of the conventional capacitive touch panel is a metal mesh sensing structure composed of a plurality of metal wires, and the impedance of the mesh sensing structure of the metal material is lower than that of the ITO; In the design, it is easy to cause the electrical connection of the sensing structure to be interrupted due to the problem of wire breakage in the process, resulting in an open circuit.
本發明之目的在於提供一種觸控感測結構及其製造方法，可提升觸控面板之光學性能與靈敏度，並且提高觸控面板生產良率。An object of the present invention is to provide a touch sensing structure and a manufacturing method thereof, which can improve the optical performance and sensitivity of the touch panel and improve the production yield of the touch panel.
為達成上述之目的，本發明提供一種觸控感測結構，包括：To achieve the above objective, the present invention provides a touch sensing structure, including:
透明基材；透明導電層，位於透明基材之上，透明導電層設有複數感測結構；導電輔助結構，位於複數感測結構，導電輔助結構用以提升複數感測結構之導電度；複數填補結構，位於複數感測結構之間，輔助導電結構位於複數填補結構之上，其中複數感測結構與複數填補結構電性開路；以及複數周邊線路，分別與感測結構電性連接，複數周邊線路供連接軟性電路板。a transparent substrate; a transparent conductive layer on the transparent substrate; the transparent conductive layer is provided with a plurality of sensing structures; the conductive auxiliary structure is located in the complex sensing structure, and the conductive auxiliary structure is used to enhance the conductivity of the complex sensing structure; The filling structure is located between the complex sensing structures, and the auxiliary conductive structure is located above the complex filling structure, wherein the plurality of sensing structures and the plurality of filling structures are electrically open; and the plurality of peripheral lines are electrically connected to the sensing structures respectively, and the plurality of surrounding structures are respectively connected The line is for connecting a flexible circuit board.
為達成上述之目的，本發明之觸控感測結構，其中導電輔助結構為網狀結構，該網狀結構至少由複數第一線路和複數第二線路交織而成，每一第一線路和每一第二線路之大小範圍在20μm以下。In order to achieve the above object, the touch sensing structure of the present invention, wherein the conductive auxiliary structure is a mesh structure, the mesh structure is interwoven by at least a plurality of first lines and a plurality of second lines, each of the first lines and each A second line has a size in the range of 20 μm or less.
為達成上述之目的，本發明之觸控感測結構，其中複數感測結構具有沿一第一方向延伸之複數感測串列，該些第一線路位於該些感測串列表面且沿該第一方向延伸，該些第二線路位於該些感測串表面且沿一第二方向延伸，該些第一線路與該些第二線路相互交錯，每一第二線路由該些第一線路間斷而形成複數線段，其中每一線路之線寬在20μm以下。To achieve the above objective, the touch sensing structure of the present invention, wherein the plurality of sensing structures have a plurality of sensing series extending along a first direction, the first lines are located on the sensing string list side and along the a first direction extending, the second lines are located on the surface of the sensing strings and extending along a second direction, the first lines are interlaced with the second lines, and each of the second lines is separated by the first lines The plurality of line segments are formed intermittently, wherein the line width of each line is less than 20 μm.
為達成上述之目的，本發明之觸控感測結構，其中導電輔助結構為矩陣排列結構，由複數單元所組成，其中每一單元之大小範圍在20μm以下。To achieve the above object, the touch sensing structure of the present invention, wherein the conductive auxiliary structure is a matrix arrangement structure, is composed of a plurality of cells, wherein each cell has a size range of less than 20 μm.
為達成上述之目的，本發明之觸控感測結構，其中該導電輔助結構為一隨機網點結構，由複數網點所組成，其中網點為亂數分布且每一網點之大小範圍在20μm以下。In order to achieve the above object, the touch sensing structure of the present invention, wherein the conductive auxiliary structure is a random dot structure, is composed of a plurality of dots, wherein the dots are random numbers and the size of each dot is less than 20 μm.
為達成上述之目的，本發明之觸控感測結構，其中該導電輔助結構為金屬導電材質。To achieve the above object, the touch sensing structure of the present invention, wherein the conductive auxiliary structure is a metal conductive material.
為達成上述之目的，本發明之觸控感測結構，更具有複數填補結構設置於複數感測結構之間，輔助導電結構位於複數填補結構之上。To achieve the above objective, the touch sensing structure of the present invention further has a plurality of padding structures disposed between the plurality of sensing structures, and the auxiliary conductive structures are located above the plurality of padding structures.
為達成上述之目的，本發明之觸控感測結構之製造方法，包括：提供透明基材；形成透明導電層於透明基材之上；形成導電層於透明導電層之上；圖案化導電層，形成導電輔助結構；以及圖案化導電層以及透明導電層，形成具有導電輔助結構於其上之複數感測結構和複數填補結構，其中複數填補結構位於複數感測結構之間，複數感測結構與複數填補結構電性開路，複數周邊線路分別與複數感測結構電性連接，複數周邊線路供連接軟性電路板，導電輔助結構用以提升複數感測結構之導電度。To achieve the above object, the method for manufacturing the touch sensing structure of the present invention comprises: providing a transparent substrate; forming a transparent conductive layer on the transparent substrate; forming a conductive layer on the transparent conductive layer; and patterning the conductive layer Forming a conductive auxiliary structure; and patterning the conductive layer and the transparent conductive layer to form a complex sensing structure and a complex padding structure having the conductive auxiliary structure thereon, wherein the plurality of padding structures are located between the complex sensing structures, and the complex sensing structure And the plurality of filling structures are electrically open, the plurality of peripheral lines are electrically connected to the plurality of sensing structures, the plurality of peripheral lines are connected to the flexible circuit board, and the conductive auxiliary structure is used for improving the conductivity of the complex sensing structure.
為達成上述之目的，本發明之觸控感測結構之製造方法，其中導電輔助結構為網狀結構，網狀結構至少由複數第一線路和複數第二線路交織而成，每一第一線路和每一第二線路之大小範圍在20μm以下。In order to achieve the above object, a method for manufacturing a touch sensing structure according to the present invention, wherein the conductive auxiliary structure is a mesh structure, and the mesh structure is interlaced by at least a plurality of first lines and a plurality of second lines, each of the first lines And each second line has a size range of less than 20 μm.
為達成上述之目的，本發明之觸控感測結構之製造方法，其中導電輔助結構為矩陣排列結構，由複數單元所組成，其中每一單元之大小範圍在20μm以下。In order to achieve the above object, the method for manufacturing a touch sensing structure of the present invention, wherein the conductive auxiliary structure is a matrix arrangement structure, is composed of a plurality of cells, wherein each cell has a size range of less than 20 μm.
為達成上述之目的，本發明之觸控感測結構之製造方法，其中導電輔助結構為隨機網點結構，由複數網點所組成，其中網點為亂數分布且每一網點之大小範圍在20μm以下。In order to achieve the above object, the method for manufacturing the touch sensing structure of the present invention, wherein the conductive auxiliary structure is a random dot structure, is composed of a plurality of dots, wherein the dots are random numbers and the size of each dot is less than 20 μm.
為達成上述之目的，本發明之觸控感測結構之製造方法，其中導電輔助結構為金屬導電材質。In order to achieve the above object, a method for manufacturing a touch sensing structure of the present invention, wherein the conductive auxiliary structure is a metal conductive material.
為達成上述之目的，本發明之觸控感測結構之製造方法，其中，圖案化導電層以及透明導電層，同時形成具有導電輔助結構於其上之複數感測結構和複數填補結構，複數填補結構設置於複數感測結構之間。In order to achieve the above object, a method for manufacturing a touch sensing structure according to the present invention, wherein a conductive layer and a transparent conductive layer are patterned, and a plurality of sensing structures and a plurality of filling structures having a conductive auxiliary structure thereon are formed, and the plurality of filling structures are filled. The structure is disposed between the complex sensing structures.
為達成上述之目的，本發明之觸控感測結構之製造方法，其中透明基材為可繞曲之材質，並以捲對捲技術進行每一道製程。In order to achieve the above object, the method for manufacturing a touch sensing structure of the present invention, wherein the transparent substrate is a material that can be wound, and each process is performed by a roll-to-roll technique.
如第1圖本發明觸控面板中觸控感測結構之結構示意圖、第2圖本發明觸控面板中觸控感測結構之剖視圖所示，本發明之一實施例，觸控感測結構1包括：透明基材10、透明導電層20以及導電輔助結構31，其中透明基材10為可繞捲曲之材質所構成，可以捲曲成滾筒狀。透明基材10之材質例如可為PEN、PET、PES、可繞式玻璃、PMMA、PC或PI之一，也可為上述材質之多層複合材料，而前述材質之上亦可形成有多層之透明堆疊結構之基材，多層之透明堆疊結構例如可為抗反射層或抗眩光層。或者透明基材10亦可為強化玻璃、玻璃或硬質塑膠基板等。1 is a schematic structural view of a touch sensing structure of a touch panel of the present invention, and FIG. 2 is a cross-sectional view of a touch sensing structure of the touch panel of the present invention. The touch sensing structure is one embodiment of the present invention. 1 includes a transparent substrate 10, a transparent conductive layer 20, and a conductive auxiliary structure 31. The transparent substrate 10 is made of a material that can be wound around a curl, and can be curled into a roll shape. The material of the transparent substrate 10 may be, for example, one of PEN, PET, PES, a wrapable glass, PMMA, PC or PI, or a multi-layer composite material of the above materials, and a plurality of layers may be formed on the above material. The substrate of the stacked structure, the multilayer transparent stack structure may be, for example, an anti-reflective layer or an anti-glare layer. Alternatively, the transparent substrate 10 may be a tempered glass, a glass or a rigid plastic substrate.
透明導電層20設於透明基材10之上，透明導電層20設有複數感測結構21，複數感測結構21具有複數第一感測串列於x方向平行排列。而複數第一感測串列例如可為鑽石圖案感測串列、條狀感測串列、三角形感測串列或者其他外型之感測串列。其中透明導電層20使用具有透光能力且導電能力之材質，例如可為銦錫氧化物、氧化銦、氧化鋅、氧化銦鋅、摻雜有鋁之氧化鋅、以及摻雜有銻之氧化錫中之一或其混合物。導電輔助結構31位於複數感測結構21之表面，導電輔助結構31可為金屬材質，銅合金、鋁合金、金、銀、鋁、銅、鉬等導電金屬或導電合金。多層導電金屬層之結構，例如可為鉬層/鋁層/鉬層之堆疊結構，或者可為選自銅合金、鋁合金、金、銀、鋁、銅、鉬等導電金屬或導電合金之一種或多種材質而堆疊之多層導電金屬層結構。導電金屬層多為使用物理氣相沉積(PVD)或是化學氣相沉積(CVD)，沉積速率快且製程穩定。導電輔助結構31為複數交織排列之金屬線，形成網狀結構之金屬網。金屬線寬可為為20μm以下，以10μm以下為佳，以5μm以下為最佳。金屬線距可為10um至1000um之間。當觸控面板組合於液晶顯示器時，由於每一金屬線線寬大小範圍小於畫素長寬設計，而可大幅降低疊紋(moire)視覺缺陷。導電輔助結構31與其下方之感測結構21電性連接，提升複數感測結構21之導電度。由於金屬網形式之導電輔助結構31均勻分布並接觸於複數感測結構21，將可均勻降低感測結構21之阻值。其中金屬網之結構可為曲線、直線、虛線或其中之一所織構而成，其中網狀結構可由一種以上方向的線路織構而成。如第1a圖所示，於另一實施利中，複數感測結構更具有沿第一方向X延伸之複數感測串列211，複數第一線路311位於複數感測串列211表面且沿第一方向X延伸，複數第二線路312位於複數感測串列211表面且沿第二方向Y延伸，複數第一線路311與複數第二線路312相互交錯，每一第二線路312由複數第一線路311間斷而形成複數線段，其中每一線路之線寬在20μm以下，以10μm以下為佳，以5μm以下為最佳。複數第一線路可以增進複數感測串列之導電性，進而提升靈敏度，而複數第二線路可提升外觀光學性質之均勻度。複數感測結構21之周圍設有周邊線路32，周邊線路32分別與感測結構21和軟性電路板(未圖示)電性連接。The transparent conductive layer 20 is disposed on the transparent substrate 10. The transparent conductive layer 20 is provided with a plurality of sensing structures 21, and the plurality of sensing structures 21 have a plurality of first sensing series arranged in parallel in the x direction. The plurality of first sensing series may be, for example, a diamond pattern sensing series, a strip sensing series, a triangular sensing series, or other shaped sensing series. The transparent conductive layer 20 is made of a material having light transmissive ability and electrical conductivity, and may be, for example, indium tin oxide, indium oxide, zinc oxide, indium zinc oxide, zinc oxide doped with aluminum, and tin oxide doped with antimony. One of them or a mixture thereof. The conductive auxiliary structure 31 is located on the surface of the complex sensing structure 21, and the conductive auxiliary structure 31 may be a metal material, a conductive metal such as a copper alloy, an aluminum alloy, gold, silver, aluminum, copper, molybdenum or a conductive alloy. The structure of the multi-layer conductive metal layer may be, for example, a stacked structure of a molybdenum layer/aluminum layer/molybdenum layer, or may be a conductive metal or a conductive alloy selected from the group consisting of copper alloy, aluminum alloy, gold, silver, aluminum, copper, molybdenum, and the like. A multi-layer conductive metal layer structure stacked with a plurality of materials. Most of the conductive metal layers use physical vapor deposition (PVD) or chemical vapor deposition (CVD), and the deposition rate is fast and the process is stable. The conductive auxiliary structure 31 is a metal wire of a plurality of interlaced lines, forming a metal mesh of a mesh structure. The metal line width may be 20 μm or less, preferably 10 μm or less, and most preferably 5 μm or less. The metal line spacing can be between 10um and 1000um. When the touch panel is combined with the liquid crystal display, since each metal wire has a line width range smaller than the pixel length and width design, the moire visual defect can be greatly reduced. The conductive auxiliary structure 31 is electrically connected to the sensing structure 21 underneath, and the conductivity of the complex sensing structure 21 is improved. Since the conductive auxiliary structure 31 in the form of a metal mesh is uniformly distributed and contacts the complex sensing structure 21, the resistance of the sensing structure 21 can be uniformly reduced. The structure of the metal mesh may be textured by a curve, a straight line, a broken line or one of the mesh structures, wherein the mesh structure may be textured by a line of more than one direction. As shown in FIG. 1a, in another implementation, the complex sensing structure further has a plurality of sensing series 211 extending along the first direction X, and the plurality of first lines 311 are located on the surface of the complex sensing series 211 and along the first One direction X extends, the plurality of second lines 312 are located on the surface of the complex sensing series 211 and extend along the second direction Y, the plurality of first lines 311 and the plurality of second lines 312 are interleaved, and each second line 312 is plural by the first The line 311 is intermittently formed to form a plurality of line segments, wherein the line width of each line is 20 μm or less, preferably 10 μm or less, and most preferably 5 μm or less. The complex first line can improve the conductivity of the complex sensing series, thereby improving the sensitivity, and the plurality of second lines can improve the uniformity of the optical properties of the appearance. A peripheral line 32 is disposed around the plurality of sensing structures 21, and the peripheral lines 32 are electrically connected to the sensing structure 21 and a flexible circuit board (not shown), respectively.
同上述製程製作出複數感測結構21具有複數第二感測串列於y方向平行排列，且具有導電輔助結構31於其上，x方向與y方向相互垂直。將具有複數第一感測串列和複數第二感測串列之兩種複數感測結構21相互貼合，再貼合於強化玻璃(cover glass)，形成為觸控面板。The complex sensing structure 21 is formed in the same manner as the above process, and has a plurality of second sensing series arranged in parallel in the y direction, and has a conductive auxiliary structure 31 thereon, and the x direction and the y direction are perpendicular to each other. The two complex sensing structures 21 having the plurality of first sensing series and the plurality of second sensing series are attached to each other and then attached to a cover glass to form a touch panel.
如第3圖所示，本發明之另一實施例所提供如上所述之觸控感測結構，其中導電輔助結構31為矩陣排列結構，由複數單元所組成，其中每一單元之大小範圍可為20μm以下，以10μm以下為佳，以5μm以下為最佳。單元與單元之間距可為10um至500um。矩陣中每一單元可為線形、圓形、方形、三角形或其他各式形狀。當觸控面板組合於液晶顯示器時，由於每一單元大小範圍小於畫素長寬設計，可大幅降低疊紋(moire)視覺缺陷。As shown in FIG. 3, another embodiment of the present invention provides the touch sensing structure as described above, wherein the conductive auxiliary structure 31 is a matrix arrangement structure, which is composed of a plurality of units, wherein each unit has a size range It is preferably 20 μm or less, preferably 10 μm or less, and most preferably 5 μm or less. The distance between the unit and the unit can be 10um to 500um. Each unit in the matrix can be linear, circular, square, triangular, or other various shapes. When the touch panel is combined with the liquid crystal display, since each unit size range is smaller than the pixel length and width design, the moire visual defect can be greatly reduced.
如第4圖所示，本發明之另一實施例所提供如上所述之觸控感測結構，其中導電輔助結構31為隨機網點結構，由複數網點所組成，其中網點為亂數分布且每一網點之大小範圍可為20μm以下，以10μm以下為佳，以5μm以下為最佳。網點與網點之間距可為10um至500um。每一網點可為線形、圓形、方形、三角形或其他各式形狀。由於隨機網點結構，其網點為隨機亂數分布，當觸控面板組合於液晶顯示器時，由於畫素長寬設計排列與隨機網點結構亂數排列的關係，可大幅降低疊紋(moire)視覺缺陷。As shown in FIG. 4, another embodiment of the present invention provides the touch sensing structure as described above, wherein the conductive auxiliary structure 31 is a random dot structure, which is composed of a plurality of dots, wherein the dots are random numbers and each The size of one dot may be 20 μm or less, preferably 10 μm or less, and preferably 5 μm or less. The distance between the dot and the dot can be 10um to 500um. Each dot can be linear, circular, square, triangular or other various shapes. Due to the random dot structure, the dot is randomly distributed. When the touch panel is combined with the liquid crystal display, the moiré visual defect can be greatly reduced due to the relationship between the pixel length and width design and the random arrangement of the random dot structure. .
本發明之另一實施例所提供如上所述之觸控感測結構，更具有複數填補結構設置於複數感測結構之間，並且輔助導電結構位於複數填補結構之表面。複數填補結構之材質與複數感測結構之材質相同，例如可以為銦錫氧化物、氧化銦、氧化鋅、氧化銦鋅、摻雜有鋁之氧化鋅、以及摻雜有銻之氧化錫中之一或其混合物。由於複數填補結構與複數感測結構之材質相同，並且輔助導電結構位於複數填補結構和複數感測結構之上，可使得觸控感測結構之光學性質均勻一致。Another embodiment of the present invention provides the touch sensing structure as described above, further comprising a plurality of padding structures disposed between the plurality of sensing structures, and the auxiliary conductive structures are located on a surface of the plurality of padding structures. The material of the complex filling structure is the same as the material of the complex sensing structure, and may be, for example, indium tin oxide, indium oxide, zinc oxide, indium zinc oxide, zinc oxide doped with aluminum, and tin oxide doped with antimony. One or a mixture thereof. Since the complex padding structure and the material of the complex sensing structure are the same, and the auxiliary conductive structure is located on the complex padding structure and the complex sensing structure, the optical properties of the touch sensing structure are uniform.
請參考第5a圖至第5e圖，為本發明之一實施例所提供如上述之觸控感測結構之製造方法。如第5a圖所示，提供透明基材10，形成透明導電層20於透明基材10之上，接著形成導電層30於透明導電層20之上。進行第一道黃光製程，依上光阻、曝光、顯影、蝕刻和剝膜，圖案化導電層30，使導電層30形成導電輔助結構31。接著，進行第二道黃光製程，圖案化導電層30以及透明導電層20，依序上光阻、曝光、顯影、蝕刻和剝膜，其中蝕刻製程例如可先蝕刻導電層，接著再蝕刻透明導電層；或者同時蝕刻導電層與透明導電層。如第5e圖所示，使透明導電層20形成複數感測墊21以及去除各感測墊21間之導電輔助結構31，產生導電輔助結構31位於感測結構之疊構，並同時形成複數周邊線路32，每一周邊線路32分別與感測結構21電性連接，周邊線路32另一端供電連接軟性電路板(FPC)，如第1圖及第2圖所示；然，如上述各實施例中，其中透明基材10更可為可繞曲成捲狀之材質例如可為PEN、PET、PES、可饒式玻璃、PMMA、PC或PI之一，也可為上述材質之多層複合材料，而前述材質之上亦可形成有多層之透明堆疊結構之基材，多層之透明堆疊結構例如可為抗反射層。並且以捲對捲技術進行黃光製程，以達到最大量產效率。Referring to FIGS. 5a-5e, a method of fabricating the touch sensing structure as described above is provided in accordance with an embodiment of the present invention. As shown in FIG. 5a, a transparent substrate 10 is provided, a transparent conductive layer 20 is formed over the transparent substrate 10, and then a conductive layer 30 is formed over the transparent conductive layer 20. The first yellow light process is performed, and the conductive layer 30 is patterned according to photoresist, exposure, development, etching, and stripping, so that the conductive layer 30 forms the conductive auxiliary structure 31. Then, performing a second yellow light process, patterning the conductive layer 30 and the transparent conductive layer 20, sequentially performing photoresist, exposure, development, etching, and stripping, wherein the etching process may first etch the conductive layer, and then etch transparently. a conductive layer; or simultaneously etching the conductive layer and the transparent conductive layer. As shown in FIG. 5e, the transparent conductive layer 20 is formed into a plurality of sensing pads 21 and the conductive auxiliary structures 31 between the sensing pads 21 are removed, and the conductive auxiliary structures 31 are formed on the stacked structure of the sensing structures, and at the same time, a plurality of peripheral portions are formed. Each of the peripheral lines 32 is electrically connected to the sensing structure 21, and the other end of the peripheral line 32 is connected to the flexible circuit board (FPC), as shown in FIGS. 1 and 2; however, as in the above embodiments The transparent substrate 10 may be a material that can be wound into a roll, for example, one of PEN, PET, PES, glass, PMMA, PC, or PI, or a multilayer composite of the above materials. On the foregoing material, a substrate having a plurality of transparent stacked structures may be formed, and the multilayer transparent stack structure may be, for example, an anti-reflection layer. And the roll-to-roll technology is used for the yellow light process to achieve maximum mass production efficiency.
值得一提的是，本發明利用具有導電輔助結構於其上之感測結構，可藉由導電輔助結構之較佳導電性而降低阻值。例如導電輔助結構可使用金屬網線，縱使金屬網線產生斷線的問題，仍可利用其下方之感測結構形成電性連接，而不會發生電性連接中斷以及斷路之問題，可大為提升觸控面板之生產良率。其中金屬材質可為至少一層導電金屬層，或者多層導電金屬層。其中導電金屬層之材質可為銅合金、鋁合金、金、銀、鋁、銅、鉬等導電金屬或導電合金。多層導電金屬層之結構，例如可為鉬層/鋁層/鉬層之堆疊結構，或者可為選自銅合金、鋁合金、金、銀、鋁、銅、鉬等導電金屬或導電合金之一種或多種材質而堆疊之多層導電金屬層結構。導電金屬層多為使用物理氣相沉積(PVD)或是化學氣相沉積(CVD)，沉積速率快且製程穩定。It is worth mentioning that the present invention utilizes a sensing structure having a conductive auxiliary structure thereon, which can be reduced by the preferred conductivity of the conductive auxiliary structure. For example, the conductive auxiliary structure can use a metal mesh wire, and even if the metal mesh wire is broken, the electrical connection can be formed by using the sensing structure underneath, without the interruption of the electrical connection and the problem of the open circuit, which can be greatly Improve the production yield of the touch panel. The metal material may be at least one layer of conductive metal or a plurality of layers of conductive metal. The material of the conductive metal layer may be a conductive metal or a conductive alloy such as a copper alloy, an aluminum alloy, gold, silver, aluminum, copper or molybdenum. The structure of the multi-layer conductive metal layer may be, for example, a stacked structure of a molybdenum layer/aluminum layer/molybdenum layer, or may be a conductive metal or a conductive alloy selected from the group consisting of copper alloy, aluminum alloy, gold, silver, aluminum, copper, molybdenum, and the like. A multi-layer conductive metal layer structure stacked with a plurality of materials. Most of the conductive metal layers use physical vapor deposition (PVD) or chemical vapor deposition (CVD), and the deposition rate is fast and the process is stable.
本發明之另一實施例所提供如上所述之觸控感測結構之製造方法，圖案化該導電層以及該透明導電層時，更同時形成具有導電輔助結構於其上之複數感測結構和複數填補結構，複數填補結構設置於複數感測結構之間，並且輔助導電結構位於複數填補結構之上。複數填補結構之材質與複數感測結構之材質相同，例如可以為銦錫氧化物、氧化銦、氧化鋅、氧化銦鋅、摻雜有鋁之氧化鋅、以及摻雜有銻之氧化錫中之一或其混合物。由於複數填補結構與複數感測結構之材質相同，並且輔助導電結構位於複數填補結構和複數感測結構之上，可使得觸控感測結構整體之光學性質均勻一致。Another embodiment of the present invention provides a method for fabricating a touch sensing structure as described above. When the conductive layer and the transparent conductive layer are patterned, a plurality of sensing structures having a conductive auxiliary structure thereon are simultaneously formed and The complex fill structure, the complex fill structure is disposed between the complex sense structures, and the auxiliary conductive structure is located above the complex fill structure. The material of the complex filling structure is the same as the material of the complex sensing structure, and may be, for example, indium tin oxide, indium oxide, zinc oxide, indium zinc oxide, zinc oxide doped with aluminum, and tin oxide doped with antimony. One or a mixture thereof. Since the complex padding structure and the material of the complex sensing structure are the same, and the auxiliary conductive structure is located on the complex padding structure and the complex sensing structure, the overall optical properties of the touch sensing structure are uniform.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明。任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視申請專利範圍所界定者為準。Although the present invention has been disclosed above by way of example, it is not intended to limit the invention. The scope of the present invention is defined by the scope of the claims, and the scope of the invention is intended to be limited by the scope of the invention.
1．．．觸控感測結構1. . . Touch sensing structure
10．．．透明基材10. . . Transparent substrate
20．．．透明導電層20. . . Transparent conductive layer
21．．．感測結構twenty one. . . Sensing structure
211．．．複數感測串列211. . . Complex sensing series
30．．．導電層30. . . Conductive layer
31．．．導電輔助結構31. . . Conductive auxiliary structure
311．．．複數第一線路311. . . Plural first line
312．．．複數第二線路312. . . Plural second line
32．．．周邊線路32. . . Peripheral line
33．．．金屬框33. . . Metal frame
41．．．光阻41. . . Photoresist
42．．．光罩42. . . Mask
第1圖所示為本發明觸控感測結構之結構示意圖。FIG. 1 is a schematic structural view of a touch sensing structure of the present invention.
第1a圖所示為本發明觸控感測結構之結構示意圖。FIG. 1a is a schematic structural view of the touch sensing structure of the present invention.
第2圖所示為本發明觸控感測結構之結構剖視圖。2 is a cross-sectional view showing the structure of the touch sensing structure of the present invention.
第3圖所示為本發明觸控感測結構之結構示意圖。FIG. 3 is a schematic structural view of the touch sensing structure of the present invention.
第4圖所示為本發明觸控感測結構之結構示意圖。FIG. 4 is a schematic structural view of the touch sensing structure of the present invention.
第5a圖至第5e圖所示為本發明中觸控感測結構製造方法之示意圖。5a to 5e are schematic views showing a method of manufacturing a touch sensing structure according to the present invention.
1．．．觸控感測結構1. . . Touch sensing structure
10．．．透明基材10. . . Transparent substrate
20．．．透明導電層20. . . Transparent conductive layer
21．．．感測結構twenty one. . . Sensing structure
31．．．導電輔助結構31. . . Conductive auxiliary structure
32．．．周邊線路32. . . Peripheral line
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| CN104516614A (en) * | 2013-09-26 | 2015-04-15 | 业鑫科技顾问股份有限公司 | Touch device |
| TWI514213B (en) * | 2013-10-01 | 2015-12-21 | E Ink Holdings Inc | Touch structure and manufacturing method for the same |
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|---|---|---|---|---|
| US20100007627A1 (en) * | 2008-07-09 | 2010-01-14 | Chi Hsin Electronics Corp. | Touch signal transmission circuit and liquid crystal display using the same |
| CN101393502B (en) * | 2008-10-31 | 2012-03-07 | 敦泰科技有限公司 | Mutual capacitance touch screen and combined mutual capacitance touch screen |
| JP5591834B2 (en) * | 2009-03-04 | 2014-09-17 | ナム、ドンシク | Touch panel sensor |
| TW201040818A (en) * | 2009-05-08 | 2010-11-16 | Sintek Photronic Corp | Capacitive touch panel structure with high optical uniformity |
| TWI451313B (en) * | 2009-06-26 | 2014-09-01 | Ritfast Corp | Capacitor type touch panel |
| CN102103426A (en) * | 2009-12-22 | 2011-06-22 | 台达电子工业股份有限公司 | Touch panel |
| CN201583935U (en) * | 2010-01-22 | 2010-09-15 | 牧东光电（苏州）有限公司 | Capacitive touch panel with double-sided alloy layer |
| CN101840285B (en) * | 2010-05-04 | 2012-07-04 | 友达光电股份有限公司 | Touch control device, touch control display panel and repairing method thereof |
| CN101893965A (en) * | 2010-08-06 | 2010-11-24 | 矽创电子股份有限公司 | Touch display panel |
| TWM405597U (en) * | 2010-12-30 | 2011-06-11 | Young Fast Optoelectronics Co | Improving touch panel structure |
-
2011
- 2011-10-07 TW TW100136400A patent/TWI465993B/en not_active IP Right Cessation
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2012
- 2012-06-21 CN CN201210206899.3A patent/CN103034355B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI509480B (en) * | 2013-05-30 | 2015-11-21 | Nanchang O Film Tech Co Ltd | Touch panel |
| TWI509483B (en) * | 2013-08-28 | 2015-11-21 | Rtr Tech Technology Co Ltd | Touch panel and manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI465993B (en) | 2014-12-21 |
| CN103034355A (en) | 2013-04-10 |
| CN103034355B (en) | 2016-05-04 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |