TW201312295A - Substrate processing device - Google Patents

Abstract

This substrate processing device forms a pattern on the surface to be treated of a substrate and is provided with: a hollow mask holding part that is rotatable about an axis of rotation and holds a mask in which a pattern is formed; a control device that controls the rotation of the mask holding part and also controls the transporting of substrates; and an optical system which forms the pattern on the substrate and has an optical member that is disposed within the mask holding part and deflects the light that has come via the pattern within the mask holding part.

Description

基板處理裝置 Substrate processing device

本發明係關於基板處理裝置。 The present invention relates to a substrate processing apparatus.

本申請係根據2011年9月7日申請之日本特願2011-195468號主張優先權，並將其內容援引於此。 Priority is claimed on Japanese Patent Application No. 2011-195468, filed on Sep. 7, 2011, the content of which is incorporated herein.

作為構成顯示器裝置等顯示裝置之顯示元件，例如有液晶顯示元件、有機電致發光(有機EL)元件、用於電子紙之電泳元件等。作為製作此等元件之手法之一，例如有一種被稱為捲軸對捲軸(roll to roll)方式(以下，簡記為「捲軸方式」)之手法廣為人知(例如，參照專利文獻1)。 Examples of the display element constituting the display device such as a display device include a liquid crystal display element, an organic electroluminescence (organic EL) element, an electrophoresis element for electronic paper, and the like. As one of the methods for producing such elements, for example, a method called a roll to roll method (hereinafter, abbreviated as "reel method") is widely known (for example, refer to Patent Document 1).

捲軸方式，係將捲繞在基板供應側之滾筒之長條片狀基板送出且一邊將送出之基板以基板回收側之滾筒加以捲取、一邊搬送，在基板從送出至被捲取之期間，將顯示電路或驅動電路等圖案依序形成於基板上之手法。近年來，已提出了形成高精度之圖案之處理裝置。 In the reel method, the long-sheet-shaped substrate wound on the substrate supply side is fed, and the fed substrate is taken up while being wound up on the substrate-receiving side, and the substrate is transported from the time of being ejected to being wound up. A method of sequentially forming a pattern such as a display circuit or a driving circuit on a substrate. In recent years, a processing apparatus for forming a pattern of high precision has been proposed.

專利文獻1：國際公開第2008/129819號 Patent Document 1: International Publication No. 2008/129819

然而，即使係如上述之捲軸方式，亦被要求能有效率地於基板製造顯示元件之技術。 However, even in the above-described reel mode, a technique of efficiently manufacturing a display element on a substrate is required.

本發明之態樣，其目的在於提供能對基板進行有效率之處理之基板處理裝置。 An aspect of the present invention is to provide a substrate processing apparatus capable of efficiently processing a substrate.

依據本發明之第1態樣，提供一種基板處理裝置，係於基板之被處理面形成圖案，其具備：中空狀之光罩保持部，保持形成有圖案之光罩，能以旋轉軸為中心旋轉；控制裝置，控制前述光罩保持部之旋轉，且控制基板之搬送；以及光學系，具有配置於光罩保持部內部且使經由圖案之光在光罩保持部內部偏向之光學構件，用以將圖案形成於基板。 According to a first aspect of the present invention, a substrate processing apparatus is provided which is formed in a pattern on a surface to be processed of a substrate, and includes a hollow mask holding portion, and holds a mask formed with a pattern, and is capable of centering on a rotating shaft Rotation; control means for controlling the rotation of the mask holding portion and controlling the conveyance of the substrate; and the optical system having an optical member disposed inside the mask holding portion and biasing the light passing through the pattern inside the mask holding portion To form a pattern on the substrate.

根據本發明之態樣，能提供能對基板進行有效率之處理之基板處理裝置。 According to the aspect of the invention, it is possible to provide a substrate processing apparatus capable of efficiently processing a substrate.

以下，參照圖式說明本實施形態。 Hereinafter, the present embodiment will be described with reference to the drawings.

圖1係顯示本實施形態之基板處理裝置100之構成的示意圖。 Fig. 1 is a schematic view showing the configuration of a substrate processing apparatus 100 of the present embodiment.

如圖1所示，基板處理裝置100具有：供應帶狀之基板(例如帶狀之薄膜構件)S之基板供應部2、對基板S之表面(被處理面)Sa進行處理之基板處理部3、回收基板S之基板回收部4、控制此等各部之控制部CONT。 As shown in FIG. 1, the substrate processing apparatus 100 includes a substrate supply unit 2 that supplies a strip-shaped substrate (for example, a strip-shaped film member) S, and a substrate processing unit 3 that processes the surface (processed surface) Sa of the substrate S. The substrate recovery unit 4 of the substrate S is recovered, and the control unit CONT of each of the units is controlled.

基板處理部3用以在從基板供應部2送出基板S後至藉由基板回收部4回收基板S之期間對基板S之表面執行各種處理。此基板處理裝置100，可使用於在基板S上形成例如有機EL元件、液晶顯示元件等顯示元件(電子元件)之情形。 The substrate processing unit 3 performs various processes on the surface of the substrate S while the substrate S is fed from the substrate supply unit 2 and after the substrate S is recovered by the substrate collection unit 4 . This substrate processing apparatus 100 can be used for forming a display element (electronic element) such as an organic EL element or a liquid crystal display element on the substrate S.

此外，本實施形態中，係如圖1所示設定XYZ正交座 標系統，以下適當使用此XYZ正交座標系統來進行說明。XYZ正交座標系統，例如沿水平面設定X軸及Y軸，沿垂直方向朝上設定Z軸。又，基板處理裝置100係整體沿X軸從其負側(-側)往正側(+側)搬送基板S。此時，帶狀之基板S之寬度方向(短邊方向)設定於Y軸方向。 Further, in the present embodiment, the XYZ orthogonal seat is set as shown in FIG. The standard system is described below using this XYZ orthogonal coordinate system as appropriate. The XYZ orthogonal coordinate system, for example, sets the X axis and the Y axis along the horizontal plane, and sets the Z axis upward in the vertical direction. Further, the substrate processing apparatus 100 entirely transports the substrate S from the negative side (− side) to the positive side (+ side) along the X-axis. At this time, the width direction (short side direction) of the strip-shaped substrate S is set in the Y-axis direction.

作為在基板處理裝置100成為處理對象之基板S，可使用例如樹脂膜或不鏽鋼等之箔(foil)。樹脂膜可使用例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯基共聚物(Ethylene vinyl copolymer)樹脂、聚氯乙烯基樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯基樹脂等材料。 As the substrate S to be processed by the substrate processing apparatus 100, a foil such as a resin film or stainless steel can be used. As the resin film, for example, a polyethylene resin, a polypropylene resin, a polyester resin, an ethylene vinyl copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, or the like may be used. Materials such as polycarbonate resin, polystyrene resin, and vinyl acetate resin.

基板S，以承受較高溫(例如200℃程度)之熱其尺寸亦實質上無變化(熱變形小)之熱膨脹係數較小者較佳。例如可將無機填料混於樹脂膜以降低熱膨脹係數。作為無機填料，例如有氧化鈦、氧化鋅、氧化鋁、氧化矽等。又，基板S亦可係以浮法等製造之厚度100μm程度之極薄之單體、或於該極薄玻璃貼合有上述樹脂膜或鋁箔而成之積層體。 It is preferable that the substrate S is subjected to a relatively high temperature (for example, about 200 ° C), and the size thereof is substantially unchanged (the thermal deformation is small), and the coefficient of thermal expansion is small. For example, an inorganic filler may be mixed in the resin film to lower the coefficient of thermal expansion. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, cerium oxide, and the like. Further, the substrate S may be a monolith having a thickness of about 100 μm which is produced by a float method or the like, or a laminate in which the resin film or the aluminum foil is bonded to the ultra-thin glass.

基板S之寬度方向(短邊方向)之尺寸係形成為例如1m~2m程度、長度方向(長邊方向)之尺寸則形成為例如10m以上。當然，此尺寸僅為一例，並不限於此。例如基板S之Y方向之尺寸為1m以下或50cm以下亦可、亦可為2m以上。又，基板S之X方向之尺寸亦可在10m以下。 The dimension in the width direction (short side direction) of the substrate S is formed, for example, to about 1 m to 2 m, and the dimension in the longitudinal direction (longitudinal direction) is formed to be, for example, 10 m or more. Of course, this size is only an example and is not limited thereto. For example, the dimension of the substrate S in the Y direction may be 1 m or less or 50 cm or less, or may be 2 m or more. Further, the dimension of the substrate S in the X direction may be 10 m or less.

基板S係形成為具有可撓性。此處，所謂可撓性，係 指例如對基板施以自重程度之力亦不會斷裂或破裂、而能將該基板加以彎折之性質。又，藉由自重程度之力而彎折之性質亦包含於可撓性。又，上述可撓性會隨著該基板材質、大小、厚度、或温度等之環境等而改變。此外，基板S可使用一片帶狀之基板、亦可使用將複數個單位基板加以連接而形成為帶狀之構成。 The substrate S is formed to have flexibility. Here, the term "flexibility" It refers to the property that the substrate can be bent without breaking or cracking, for example, by applying a self-weight to the substrate. Moreover, the property of being bent by the force of the degree of self-weight is also included in the flexibility. Further, the flexibility may vary depending on the material, size, thickness, temperature, and the like of the substrate. Further, the substrate S may be a strip-shaped substrate, or a plurality of unit substrates may be connected to form a strip.

基板供應部2係將例如捲成捲軸狀之基板S送出供應至基板處理部3。於基板供應部2，設有用以捲繞基板S之軸部或使該軸部旋轉之旋轉驅動裝置等。除此之外，亦可係設置例如用以覆蓋捲成捲軸狀狀態之基板S的覆蓋部等。此外，基板供應部2不限定於送出捲成捲軸狀之基板S之機構，只要係包含將帶狀之基板S於其長度方向依序送出之機構(例如夾持式之驅動滾筒等)者即可。 The substrate supply unit 2 supplies and supplies the substrate S wound in a roll shape to the substrate processing unit 3, for example. The substrate supply unit 2 is provided with a rotary drive device for winding a shaft portion of the substrate S or rotating the shaft portion. In addition to this, for example, a cover portion or the like for covering the substrate S wound in a roll state may be provided. Further, the substrate supply unit 2 is not limited to a mechanism for feeding the substrate S wound in a reel shape, and includes a mechanism for sequentially feeding the strip-shaped substrate S in the longitudinal direction thereof (for example, a grip type driving roller or the like). can.

基板回收部4係將通過基板處理裝置100之基板S例如捲取成捲軸狀加以回收。於基板回收部4，與基板供應部2同樣的，設有用以捲繞基板S之軸部及使該軸部旋轉之旋轉驅動源、以及覆蓋回收之基板S的覆蓋部等。亦可替代地或追加地，在基板處理部3將基板S例如切成平板(panel)狀之場合等時，基板回收部4亦可為例如將基板S回收成重疊狀態等與捲繞成捲軸狀之狀態不同之狀態回收基板S之構成。 The substrate collecting unit 4 collects the substrate S that has passed through the substrate processing apparatus 100, for example, in a roll shape. Similarly to the substrate supply unit 2, the substrate collection unit 4 is provided with a shaft portion for winding the substrate S, a rotation drive source for rotating the shaft portion, and a cover portion for covering the recovered substrate S. Alternatively or in addition, when the substrate processing unit 3 cuts the substrate S into a flat shape, for example, the substrate collecting unit 4 may be, for example, collected in a stacked state and wound into a reel. The configuration of the substrate S is recovered in a state in which the state of the shape is different.

基板處理部3，將從基板供應部2供應之基板S搬送至基板回收部4，並在搬送過程對基板S之被處理面Sa進行處理。基板處理部3具有對基板S之被處理面Sa進行加工 處理之加工處理裝置10、以與加工處理之形態對應之條件搬送基板S之包含驅動滾筒R等之搬送裝置20。 The substrate processing unit 3 transports the substrate S supplied from the substrate supply unit 2 to the substrate collection unit 4, and processes the processed surface Sa of the substrate S during the transfer process. The substrate processing unit 3 has processed the processed surface Sa of the substrate S The processing device 10 for processing conveys the substrate 20 including the driving roller R and the like in a condition corresponding to the processing.

加工處理裝置10具有用以對基板S之被處理面Sa形成例如有機EL元件之各種裝置。作為此種裝置，例如有用以在被處理面Sa上形成間隔壁之印製方式等間隔壁形成裝置、用以形成電極的電極形成裝置、以及用以形成發光層之發光層形成裝置等。 The processing apparatus 10 has various means for forming, for example, an organic EL element on the processed surface Sa of the substrate S. As such a device, for example, a partition wall forming device such as a printing method in which a partition wall is formed on the surface to be processed Sa, an electrode forming device for forming an electrode, and a light-emitting layer forming device for forming a light-emitting layer can be used.

更具體而言，有液滴塗布裝置(例如噴墨型塗布裝置等)、成膜裝置(例如鍍敷裝置、蒸鍍裝置、濺鍍裝置)、曝光裝置、顯影裝置、表面改質裝置、洗淨裝置等。此等之各裝置，係沿基板S之搬送路徑適當設置，撓性顯示器之面板等能以所謂捲軸對捲軸方式生產。本實施形態中，作為加工處理裝置10，係設有曝光裝置，負責其前後之步驟(感光層形成步驟、感光層顯影步驟等)之裝置亦視必要來線上設置。 More specifically, there are a droplet applying device (for example, an inkjet coating device), a film forming device (for example, a plating device, a vapor deposition device, a sputtering device), an exposure device, a developing device, a surface modifying device, and a washing machine. Net device, etc. Each of these devices is appropriately disposed along the transport path of the substrate S, and the panel of the flexible display or the like can be produced in a so-called reel-to-reel manner. In the present embodiment, as the processing device 10, an exposure device is provided, and the device for the steps before and after (the photosensitive layer forming step, the photosensitive layer developing step, and the like) is also provided on the line as necessary.

圖2係顯示設於加工處理裝置10內之曝光裝置之概略整體構成之圖，本實施形態之曝光裝置具有複數個曝光裝置EX(EX1~EX4)。複數個曝光裝置EX1~EX4，構成為將分別形成為圓筒面狀之光罩圖案之一部分成像投影至基板S之被處理面Sa上之投影區域PA1~PA4，構成為使圓筒狀光罩圖案之旋轉速度與基板S之X方向搬送速度同步並掃描曝光之裝置。 2 is a view showing a schematic overall configuration of an exposure apparatus provided in the processing apparatus 10. The exposure apparatus of the present embodiment has a plurality of exposure apparatuses EX (EX1 to EX4). The plurality of exposure devices EX1 to EX4 are configured to project and project a part of the reticle pattern formed into a cylindrical shape onto the projection areas PA1 to PA4 on the processed surface Sa of the substrate S, and the cylindrical reticle is configured. A device that synchronizes the rotational speed of the pattern with the X-direction transport speed of the substrate S and scans the exposure.

複數個曝光裝置EX1~EX4，係配置成投影區域PA1~PA4在Y方向緊貼或一部分重疊，在X方向分離配置成 在空間上不干涉。 The plurality of exposure devices EX1 to EX4 are arranged such that the projection areas PA1 to PA4 are closely attached or partially overlapped in the Y direction, and are arranged in the X direction. No interference in space.

本實施形態中，由於待曝光於基板S之被處理面Sa之圖案區域、例如有機EL顯示器之顯示面板之全寬(Y方向)較一個曝光裝置之曝光視野尺寸(PA1~PA4之各Y方向尺寸)大，因此此處，藉由四台曝光裝置EX1~EX4之各曝光視野掃描曝光之被處理面Sa上之條紋狀之被曝光區域構成為在Y方向連結。 In the present embodiment, the pattern area to be exposed on the processed surface Sa of the substrate S, the full width (Y direction) of the display panel of the organic EL display, for example, is larger than the exposure field size of one exposure apparatus (the Y direction of each of PA1 to PA4). Since the size is large, the stripe-shaped exposed areas on the processed surface Sa scanned and exposed by the exposure fields of the four exposure apparatuses EX1 to EX4 are connected in the Y direction.

圖3係顯示曝光裝置EX之概略構成之圖。複數個曝光裝置EX1~EX4係相同構成。以下，以一個曝光裝置EX為代表來說明。 Fig. 3 is a view showing a schematic configuration of an exposure apparatus EX. The plurality of exposure devices EX1 to EX4 have the same configuration. Hereinafter, a single exposure apparatus EX will be described as a representative.

如圖3所示，曝光裝置EX係將形成於圓筒狀之光罩M之圖案Pm之像投影至基板S之裝置。曝光裝置EX具有照明光罩M之照明裝置IL、對基板S投影圖案Pm之像之投影光學系PL、能將光罩M保持成圓筒狀並以與Z軸平行之軸線C為中心旋轉之光罩保持裝置(光罩保持部)MST、以及將基板S以在X方向控制速度之狀態搬送之基板搬送裝置(基板搬送部)SST。 As shown in FIG. 3, the exposure apparatus EX is an apparatus which projects the image of the pattern Pm formed in the cylindrical mask M onto the board|substrate S. The exposure apparatus EX has an illumination device IL that illuminates the mask M, a projection optical system PL that projects an image of the substrate S, and a mirror M that can hold the mask M in a cylindrical shape and rotate around the axis C parallel to the Z axis. The mask holding device (mask holding portion) MST and the substrate conveying device (substrate conveying portion) SST that transports the substrate S in a state where the speed is controlled in the X direction.

照明裝置IL具有用以對光罩M照射曝光用照明光ELI之光源裝置21與照射光學系22。從光源裝置21射出之照明光ELI經由照射光學系22照射至光罩M上之狹縫狀區域。此外，照射光學系22在圖3中雖簡化顯示，但實際上包含導引照明光ELI之複數個光學元件。 The illumination device IL has a light source device 21 and an illumination optical system 22 for irradiating the mask M with the illumination illumination light ELI. The illumination light ELI emitted from the light source device 21 is irradiated to the slit-like region on the mask M via the illumination optical system 22. Further, although the illumination optical system 22 is simplified in FIG. 3, it actually includes a plurality of optical elements that guide the illumination light ELI.

照明光ELI之狹縫狀照射區域，設定為在圖3中係沿光罩M之圓筒面之面長方向、亦即與軸線C平行之Z方向 延伸，覆蓋形成圖案Pm之光罩M上之圖案形成區域之Z方向寬度。 The slit-shaped irradiation region of the illumination light ELI is set to be in the longitudinal direction of the cylindrical surface of the mask M in FIG. 3, that is, the Z direction parallel to the axis C. The extension covers the Z-direction width of the pattern forming region on the mask M on which the pattern Pm is formed.

光罩保持裝置MST具有筒構件40及驅動裝置ACM。筒構件40形成為以與Z軸方向平行之軸線C為中心之圓筒狀。筒構件40具有相當於外周面之圓筒面40a。筒構件40形成為沿圓筒面40a保持光罩M。 The mask holding device MST has a tubular member 40 and a driving device ACM. The tubular member 40 is formed in a cylindrical shape centering on the axis C parallel to the Z-axis direction. The tubular member 40 has a cylindrical surface 40a corresponding to the outer peripheral surface. The tubular member 40 is formed to hold the reticle M along the cylindrical surface 40a.

本實施形態中，光罩M係作為於平坦性佳之短條狀極薄玻璃版(例如厚度100~500μm)之一面以鉻等遮光層形成有圖案Pm之透射型光罩基板被製作，係使其沿筒構件40之圓筒面40a彎曲並捲纏之狀態來使用。 In the present embodiment, the mask M is produced as a transmissive mask substrate in which a pattern Pm is formed on a surface of a short strip-shaped ultra-thin glass plate (for example, a thickness of 100 to 500 μm) having a good flatness. It is used in a state in which the cylindrical surface 40a of the tubular member 40 is bent and wound.

因此，於筒構件40之圓筒面40a，與光罩M上之圖案形成區域(待投影曝光區域)大小對應之開口部係於周長方向涵蓋既定角度量地形成，光罩M被以該開口部之周邊部分保持。 Therefore, in the cylindrical surface 40a of the tubular member 40, the opening portion corresponding to the size of the pattern forming region (the area to be projected) on the mask M is formed so as to cover a predetermined angular amount in the circumferential direction, and the mask M is used as the The peripheral portion of the opening is held.

該開口部能沿圓筒面40a設置兩處、三處之複數處，於於各開口部安裝相同光罩M能提高生產性，或安裝不同光罩(製品不同)而例如能將顯示尺寸不同之複數種面板於基板S上同時生產。 The opening portion can be provided at two or three places along the cylindrical surface 40a, and the same mask M can be attached to each opening portion to improve productivity, or different masks (different products) can be mounted, for example, the display size can be different. A plurality of panels are simultaneously produced on the substrate S.

筒構件40係設置成能沿圓筒面40a之圓周方向(亦即，繞作為圓筒面40a之中心軸線之軸線C)旋轉。驅動裝置ACM具備使筒構件40旋轉驅動之旋轉馬達與使筒構件40整體往圖中X方向、Y方向及Z方向高速微動之致動器(壓電馬達、電磁線性馬達等)。 The tubular member 40 is provided to be rotatable in the circumferential direction of the cylindrical surface 40a (that is, about the axis C which is the central axis of the cylindrical surface 40a). The drive device ACM includes a rotary motor that rotationally drives the tubular member 40 and an actuator (piezoelectric motor, electromagnetic linear motor, or the like) that rapidly inverts the entire tubular member 40 in the X direction, the Y direction, and the Z direction in the drawing.

作為筒構件40之微動軸，亦可進一步設置用以使旋轉 時之軸線C在圖3中之XZ面內能微小傾斜之致動器。此係為了對應被照射狹縫狀照明光ELI之光罩M上之被照射區域之長度方向(Z方向)在旋轉中會相對地在Z內微小傾斜之誤差之故。 As a micro-motion shaft of the tubular member 40, it may be further provided to rotate The axis C of the time is an actuator that can be slightly tilted in the XZ plane in FIG. This is because the longitudinal direction (Z direction) of the irradiated region on the mask M on which the slit-shaped illumination light ELI is irradiated is slightly tilted in the Z in the rotation.

筒構件40具有形成於+Z方向端部之第一端面40b與形成於-Z側端部之第二端面40c。筒構件40配置成第一端面40b及第二端面40c與XY平面平行。筒構件40中之第二端面40c朝向基板S側。 The tubular member 40 has a first end surface 40b formed at an end portion in the +Z direction and a second end surface 40c formed at an end portion on the -Z side. The tubular member 40 is disposed such that the first end surface 40b and the second end surface 40c are parallel to the XY plane. The second end surface 40c of the tubular member 40 faces the substrate S side.

光罩M被保持成形成有圖案Pm之圖案面朝向筒構件40內側。因此，圖案Pm實質上配置於與圓筒面40a一致之面上。光罩M能裝卸地保持於圓筒面40a上。 The mask M is held such that the pattern surface on which the pattern Pm is formed faces the inside of the tubular member 40. Therefore, the pattern Pm is substantially disposed on the surface that coincides with the cylindrical surface 40a. The photomask M is detachably held on the cylindrical surface 40a.

圖4係顯示光罩保持裝置MST構成之立體圖。 Fig. 4 is a perspective view showing the construction of the mask holding device MST.

如圖4所示，筒構件40設置成能以軸線C為中心沿圓筒面40a之圓周方向旋轉。筒構件40設置成能藉由未圖示之固定裝置等來對曝光裝置EX裝卸。 As shown in FIG. 4, the tubular member 40 is provided to be rotatable in the circumferential direction of the cylindrical surface 40a around the axis C. The tubular member 40 is provided to be attachable and detachable to the exposure apparatus EX by a fixing device or the like (not shown).

如先前所說明，於筒構件40，在圓筒面40a之周長方向與光罩M之尺寸對應地形成有用以使光罩M之圖案形成區域露出之複數個開口部41(OP),42(OP)。在圖4之構成中，安裝有兩片光罩M，開口部41(OP),42(OP)形成為連通筒構件40之內部與外部。 As described above, in the tubular member 40, a plurality of openings 41 (OP) for exposing the pattern forming region of the mask M are formed corresponding to the size of the mask M in the circumferential direction of the cylindrical surface 40a, 42 (OP). In the configuration of Fig. 4, two masks M are attached, and openings 41 (OP) and 42 (OP) are formed to communicate the inside and the outside of the tubular member 40.

當將兩片光罩M之外形尺寸設為相同，將捲纏時之光罩M之周長方向尺寸設為Lm，將周長方向之光罩間之間隙尺寸設為Lg時，圓筒面40a之全周長CW為2‧(Lm+Lg)，直徑為CW/π。 When the outer dimensions of the two masks M are set to be the same, the circumferential direction dimension of the mask M at the time of winding is set to Lm, and the gap size between the masks in the circumferential direction is set to Lg, the cylindrical surface The full circumference CW of 40a is 2‧ (Lm+Lg) and the diameter is CW/π.

第一開口部41(OP)，第二開口部42(OP)，配置成隔著軸線C對向，周長方向之尺寸與Z方向之尺寸設定為較光罩M上之圖案形成區域大，較光罩M之外形尺寸小。 The first opening portion 41 (OP) and the second opening portion 42 (OP) are disposed to face each other across the axis C, and the dimension in the circumferential direction and the dimension in the Z direction are set to be larger than the pattern forming region on the mask M. It is smaller in size than the mask M.

筒構件40於第一開口部41及第二開口部42周圍之區域具有光罩吸附部SC。光罩吸附部SC具有吸引口43、連接於前述吸引口43之吸引泵(真空源、電磁閥等)44。光罩吸附部SC藉由透過吸引口43吸引光罩M之圖案形成區域之外側部分，而能將光罩M吸附於筒構件40。光罩吸附部SC能藉由停止光罩M之吸引而解除光罩M之保持。藉由調整光罩吸附部SC之吸引，能順暢地進行光罩M之安裝、卸除之切換。 The tubular member 40 has a mask suction portion SC in a region around the first opening portion 41 and the second opening portion 42. The mask suction portion SC has a suction port 43 and a suction pump (a vacuum source, a solenoid valve, or the like) 44 connected to the suction port 43. The mask suction portion SC can suck the mask M to the tubular member 40 by sucking the outer portion of the pattern forming region of the mask M through the suction port 43. The mask suction portion SC can release the holding of the mask M by stopping the suction of the mask M. By adjusting the suction of the reticle suction portion SC, the mounting and detachment of the reticle M can be smoothly performed.

於筒構件40之軸線C方向之兩端側或一端側雖連接驅動裝置ACM之可動子，但此種旋轉機構，亦可係例如對筒構件40傳達旋轉力之齒輪機構之一部分，亦可係電磁馬達機構之可動子(磁石部或線圈部)。 Although the movable member of the driving device ACM is connected to both end sides or one end side of the tubular member 40 in the direction of the axis C, such a rotating mechanism may be, for example, a part of the gear mechanism that transmits the rotational force to the tubular member 40, or may be Movable member (magnet part or coil part) of the electromagnetic motor mechanism.

本實施態樣中，由於在筒構件40內側設置使來自圖案Pm之成像光束射入之投影光學系之一部分(至少為作為偏向構件之反射鏡等)，因此難以將以縱配置支撐筒構件40並使之旋轉之沿軸線C之機械式軸構造體設於筒內部。 In the present embodiment, since a part of the projection optical system (at least a mirror as a deflecting member) for causing the imaging light beam from the pattern Pm to enter is provided inside the tubular member 40, it is difficult to support the tubular member 40 in the vertical arrangement. A mechanical shaft structure along the axis C that is rotated and rotated is provided inside the cylinder.

因此，本實施形態中，作為一例，係藉由如圖5之構造以縱配置支撐光罩保持裝置MST(筒構件40)同時進行旋轉驅動與微動驅動。 Therefore, in the present embodiment, as an example, the shutter holding device MST (the tubular member 40) is supported in a vertical arrangement as shown in Fig. 5 to perform the rotational driving and the micro-motion driving.

圖5中，筒構件40下側之第二端面40c，係以被三處之塊狀構件200a,200b(200c未圖示)決定XY方向之狀態下 載置於環狀台座200上，並藉由真空吸附等加以固定。 In Fig. 5, the second end surface 40c on the lower side of the tubular member 40 is determined by the three block members 200a, 200b (200c not shown) in the XY direction. It is placed on the annular pedestal 200 and fixed by vacuum suction or the like.

在此狀態，形成於圓筒面40a之開口部41(OP)、42(POP)周圍之吸引口43透過第二端面40c、台座200內之流路連接於真空泵等。 In this state, the suction port 43 formed around the opening portions 41 (OP) and 42 (POP) of the cylindrical surface 40a is connected to the vacuum pump or the like through the second end surface 40c and the flow path in the pedestal 200.

台座200下面形成為平坦，且構成線性馬達之複數個磁石沿圓周被埋入。 The pedestal 200 is formed flat below, and a plurality of magnets constituting the linear motor are buried circumferentially.

於台座200下方之三處，構成線性馬達之線圈構件201a、201b、201c以120°之角度間隔配置。於此線圈構件201a、201b、201c上面形成作為空氣軸承之墊面，台座200一邊懸浮微小量、一邊以非接觸狀態被賦予在XY面內之驅動力矩。 At three places below the pedestal 200, the coil members 201a, 201b, and 201c constituting the linear motor are arranged at an angular interval of 120 degrees. On the upper surface of the coil members 201a, 201b, and 201c, a cushion surface as an air bearing is formed, and the pedestal 200 is supplied with a driving torque in the XY plane in a non-contact state while being suspended by a small amount.

各線圈構件201a、201b、201c雖使台座200繞軸線C旋轉之推力(筒構件40之圓周之切線方向之力矩)產生，但亦能同時使朝向軸線C之推力(筒構件40之徑方向之力)亦個別產生。 Each of the coil members 201a, 201b, and 201c generates a thrust force that rotates the pedestal 200 about the axis C (a moment in the tangential direction of the circumference of the tubular member 40), but can also simultaneously push the thrust toward the axis C (the radial direction of the tubular member 40). Force) also produced separately.

藉此，能使台座200與筒構件40繞軸線C旋轉，且亦使微動於XY方向。 Thereby, the pedestal 200 and the tubular member 40 can be rotated about the axis C, and the micro-motion can also be made to move in the XY direction.

再者，三處之線圈構件201a、201b、201c之各個能藉由能微動於Z方向之致動器(壓電元件、音圈馬達等)202a、202b、202c個別調整Z方向之高度位置，藉此微調整台座200與筒構件40之傾斜。 Furthermore, each of the three coil members 201a, 201b, and 201c can individually adjust the height position in the Z direction by actuators (piezoelectric elements, voice coil motors, etc.) 202a, 202b, and 202c that can be slightly moved in the Z direction. Thereby, the inclination of the pedestal 200 and the tubular member 40 is finely adjusted.

於筒構件40上方之第一端面40b附近，以120°之角度間隔設有以次微米以下之精度測量筒構件40側面在XY面之位置變化或Z方向之位移之感測器203a,203b,203c，逐 次檢測出筒構件40之旋轉時之XY方向之位置偏移誤差、Z軸與軸線C之相對傾斜誤差等姿勢變化。 In the vicinity of the first end surface 40b above the tubular member 40, sensors 203a, 203b for measuring the displacement of the side surface of the cylindrical member 40 at the XY plane or the displacement of the Z direction with an accuracy of submicron or less are provided at an angular interval of 120°. 203c, one by one The positional deviation error in the XY direction and the relative tilt error of the Z axis and the axis C when the rotation of the tubular member 40 is detected is detected.

被檢測出之各種誤差資訊，使用於線圈構件201、致動器202之回饋控制、前饋控制，控制成此等之誤差成為容許值以下。 The various error information detected is used for the feedback control of the coil member 201 and the actuator 202, and the feedforward control, and the error such as the control is equal to or less than the allowable value.

又，於三處感測器203之各個亦組裝有光學式編碼器讀頭，以讀取於筒構件40之第一端面40b或與圓筒面40a平行之側面在周長方向以一定節距刻設有刻度線之標尺(或全像標尺)，以精密地測量筒構件40之旋轉速度(或光罩M之圓筒狀圖案面之周長方向之掃描速度)。 Further, an optical encoder read head is also assembled to each of the three sensors 203 for reading at a certain pitch in the circumferential direction on the first end face 40b of the tubular member 40 or the side parallel to the cylindrical face 40a. A scale (or a full-scale scale) of a scale line is engraved to precisely measure the rotational speed of the tubular member 40 (or the scanning speed in the circumferential direction of the cylindrical pattern surface of the mask M).

此種編碼器系統，為了生成筒構件40之每一圈旋轉中作為基準之原點訊號，與標尺同時亦刻設有原點標記。 In order to generate the origin signal as a reference for each rotation of the tubular member 40, the encoder system is also provided with an origin mark at the same time as the scale.

此外，作為感測器，亦可係於Z方向之複數處設有在筒構件40之旋轉中檢測光罩M之圖案面之軸線C方向(與XY面平行之方向)之位置變化之非接觸式位移感測器，即時求出至少藉由照明光ELI照射之光罩之圖案面部分之姿勢，藉由線圈構件201、致動器202進行對投影光學系之聚焦調整或調平調整。 Further, as the sensor, a non-contact position change in the direction of the axis C (the direction parallel to the XY plane) of the pattern surface of the mask M during the rotation of the tubular member 40 may be provided at a plurality of points in the Z direction. The displacement sensor instantly determines the posture of the pattern surface portion of the reticle illuminated by at least the illumination light ELI, and performs focus adjustment or leveling adjustment on the projection optical system by the coil member 201 and the actuator 202.

此處，返回圖3，概略顯示之投影光學系PL，例如係將圖案Pm之像以等倍(1倍)投影至基板S者，具有透鏡系51、反射鏡52、透鏡系53、凹面鏡54(亦可係平面鏡)及成像用透鏡系55等。 Here, referring back to FIG. 3, the projection optical system PL schematically shown, for example, projects the image of the pattern Pm to the substrate S by a factor of 1 (1 time), and has a lens system 51, a mirror 52, a lens system 53, and a concave mirror 54. (It can also be a flat mirror), an imaging lens system 55, and the like.

如圖5所示，相較於筒構件40係在曝光裝置本體內設置成能旋轉，投影光學系PL位置係在曝光裝置本體內被固 定。透鏡系51設於圓筒狀之筒構件40內側之區域(以下將此內側區域適當標記為筒構件40之內側)。透鏡系51係導引藉由照明光ELI之照射而從光罩M之圖案Pm產生之光(投影用光束)。 As shown in FIG. 5, the projection optical unit PL position is fixed in the exposure apparatus body as compared with the cylindrical member 40 being rotatably disposed in the exposure apparatus body. set. The lens system 51 is provided in a region inside the cylindrical tubular member 40 (hereinafter, this inner region is appropriately labeled as the inner side of the tubular member 40). The lens system 51 guides light (projection light beam) generated from the pattern Pm of the mask M by the illumination light ELI.

圖6係顯示投影光學系PL一部分構成之圖。圖6中，為了使圖容易判別，係省略筒構件40之圖示。 Fig. 6 is a view showing a part of the configuration of the projection optical system PL. In FIG. 6, in order to make the figure easy to judge, the illustration of the cylindrical member 40 is abbreviate|omitted.

如圖3及圖6所示，反射鏡52設於圓筒狀之筒構件40內部。反射鏡52係將被透鏡系51(在圖6中省略)導光之來自光罩M之投影用光束往筒構件40之第一端面40b側反射。被反射鏡52反射之投影用光束經由透鏡系53從第一端面40b往筒構件40外部射出。反射鏡52配置成位在筒構件40內部中+X側一半之區域內。 As shown in FIGS. 3 and 6, the mirror 52 is provided inside the cylindrical tubular member 40. The mirror 52 reflects the projection light beam from the mask M guided by the lens system 51 (omitted in FIG. 6) toward the first end surface 40b side of the tubular member 40. The projection light beam reflected by the mirror 52 is emitted from the first end surface 40b to the outside of the tubular member 40 via the lens system 53. The mirror 52 is disposed in the region of the +X side half of the inside of the tubular member 40.

透鏡系53之光軸與筒構件40之旋轉中心之軸線C平行配置。 The optical axis of the lens system 53 is arranged in parallel with the axis C of the center of rotation of the tubular member 40.

通過透鏡系53之投影用光束被導至配置於投影光學系PL之瞳位置或其附近、於表面形成有凹狀反射面54a之凹面鏡54。在凹面鏡54反射之投影用光束再度通過透鏡系53。 The light beam for projection by the lens system 53 is guided to a concave mirror 54 which is disposed at or near the position of the projection optical system PL and has a concave reflecting surface 54a formed on the surface. The projection beam reflected by the concave mirror 54 passes through the lens system 53 again.

通過透鏡系53之來自凹面鏡54之投影用光束，從第一端面40b側往第二端面40c側沿軸線C通過筒構件40內部。 The light beam for projection from the concave mirror 54 passing through the lens system 53 passes through the inside of the tubular member 40 along the axis C from the first end face 40b side toward the second end face 40c side.

成像用透鏡系55係與筒構件40中之第二端面40c對向配置。成像用透鏡系55係射入來自透鏡系53之投影用光束並將圖案Pm之像成像投影至基板S之投影區域PA。 The imaging lens system 55 is disposed to face the second end surface 40c of the tubular member 40. The imaging lens system 55 is configured to project a projection light beam from the lens system 53 and project an image of the pattern Pm onto the projection area PA of the substrate S.

此外，在簡略顯示之圖6中，雖透鏡系53與凹面鏡54(亦可係平面鏡)係同軸配置而構成反折射光學系，但亦可構成為透鏡系53之圓形視野區域(XY面內)中圖中Y方向一半之光路被反射鏡52折彎，而剩下一半之光路平直地射往後續之成像用透鏡系55。 In addition, in the schematic display 6, the lens system 53 and the concave mirror 54 (which may be a plane mirror) are arranged coaxially to form a catadioptric optical system, but may be configured as a circular field of view of the lens system 53 (in the XY plane). The light path halfway in the Y direction in the middle view is bent by the mirror 52, and the remaining half of the light path is directly directed to the subsequent imaging lens unit 55.

又，如圖3所示，基板搬送裝置SST係將基板S導引成經由投影區域PA。基板搬送裝置SST具有搬送滾筒80、上游側滾筒81、下游側滾筒82及驅動裝置ACS。 Further, as shown in FIG. 3, the substrate transfer device SST guides the substrate S to pass through the projection area PA. The substrate transfer device SST includes a transfer drum 80, an upstream side drum 81, a downstream side drum 82, and a drive unit ACS.

搬送滾筒80形成為圓筒狀，具有相當於外周面之圓筒面80a。圓筒面80a係支撐基板S之支撐面。藉由搬送滾筒80搬送之基板S係沿圓筒面80a之表面形狀彎曲。 The conveyance roller 80 is formed in a cylindrical shape and has a cylindrical surface 80a corresponding to the outer peripheral surface. The cylindrical surface 80a supports the support surface of the substrate S. The substrate S conveyed by the transfer drum 80 is curved along the surface shape of the cylindrical surface 80a.

圓筒面80a配置於針對投影光學系PL與圓筒面80a光學上大致共軛之位置。嚴謹來說，捲纏於圓筒面80a之基板S之上表面(感光面)配置成與筒構件40之圓筒面40a光學上共軛。 The cylindrical surface 80a is disposed at a position where the projection optical system PL is optically substantially conjugate with the cylindrical surface 80a. Strictly speaking, the upper surface (photosensitive surface) of the substrate S wound around the cylindrical surface 80a is disposed to be optically conjugate with the cylindrical surface 40a of the tubular member 40.

基板S之厚度例如雖可為10μm~200μm之範圍，但其厚度之不均，亦能利用被抑制成較投影光學系PL之像側之焦深(DOF)小者。 The thickness of the substrate S may be, for example, in the range of 10 μm to 200 μm. However, the thickness unevenness can be suppressed to be smaller than the depth of focus (DOF) of the image side of the projection optical system PL.

此種情形下，只要以非接觸之感測器一邊逐次檢測筒構件40之圓筒面40a(光罩M之圖案面)中被投射照明光ELI之位置附近之表面部分之徑方向位置，一邊相對該位置加減基板S之已知厚度量來進行對焦即可。 In this case, the radial direction position of the surface portion near the position where the illumination light ELI is projected in the cylindrical surface 40a (the pattern surface of the mask M) of the cylindrical member 40 is sequentially detected by the non-contact sensor. It is sufficient to add or subtract the known thickness of the substrate S from the position to perform focusing.

相反地，當基板S之厚度不均較大之情形，或局部微小凹凸較大之情形，係以非接觸之感測器檢測出基板S表 面之Z方向之位置變化，來進行對焦。 On the contrary, when the thickness of the substrate S is not uniform, or the local small unevenness is large, the substrate S is detected by the non-contact sensor. The position of the surface in the Z direction changes to focus.

雖不論係何者均能進行精密之對焦，但特別是前者之方式(圓筒面40a之檢測)，不會對光罩M之有無或材質等造成影響，能隨時進行穩定之測量。 Although it is possible to perform precise focusing regardless of the method, the method of the former (the detection of the cylindrical surface 40a) does not affect the presence or absence of the mask M or the material, and stable measurement can be performed at any time.

此種用以對焦之檢測方式，關於圖3中之搬送滾筒80亦同樣，能依據要求精度適當地決定要直接測量基板S之表面之Z方向之位置變化、或測量未被以基板S覆蓋之圓筒面80a之一部分位置變化、或併用兩者。 In the same manner as the transport roller 80 of FIG. 3, the positional change in the Z direction of the surface of the substrate S can be directly determined according to the required accuracy, or the measurement is not covered by the substrate S. One of the positions of the cylindrical surface 80a is changed, or both are used in combination.

此外，圓筒面80a設定為往與藉由投影光學系PL形成之光罩M之投影像彎曲方向光學上對應之方向彎曲。具體而言，對應於往投影光學系PL彎曲成凹圓筒面狀之光罩M，形成為往投影光學系PL為凸狀圓筒面。 Further, the cylindrical surface 80a is set to be curved in a direction optically corresponding to the projection direction of the projection image of the mask M formed by the projection optical system PL. Specifically, the mask M that is curved into a concave cylindrical shape in the projection optical system PL is formed so that the projection optical system PL is a convex cylindrical surface.

圓筒面80a雖形成為與光罩M之曲率(圓筒面40a之曲率)相同之曲率，但不一定要相同，能兼顧狹縫狀照明光ELI之周長方向寬度、投影光學系PL之焦深(DOF)、待投影之圖案之線寬等，適當地設定圓筒面80a與圓筒面40a之各曲率之關係。 The cylindrical surface 80a is formed to have the same curvature as the curvature of the mask M (the curvature of the cylindrical surface 40a), but it is not necessarily the same, and the width of the slit-shaped illumination light ELI in the circumferential direction and the projection optical system PL can be achieved. The depth of focus (DOF), the line width of the pattern to be projected, and the like are appropriately set to the respective curvatures of the cylindrical surface 80a and the cylindrical surface 40a.

以圓筒面80a(嚴謹來說係基板S之被處理面Sa)與圓筒面40a之兩曲率為相同之關係，使基板S彎曲來導引時，照明光ELI照射於光罩M之被照射面與投影用光束照射於基板S之被照射面成為相同曲率之圓筒面。換言之，位於投影光學系PL之視野區域內之光罩M之曲率與位於投影光學系PL之投影區域(亦即被投影視野區域內之圖案Pm之區域)內之基板S之曲率成為相等。因此，光罩M與基板S會 在投影光學系PL之視野區域內及投影區域內之全面相互滿足共軛關係，而能於投影區域內之全面將圖案Pm之投影像良好地投影至基板S。 When the cylindrical surface 80a (strictly speaking, the processed surface Sa of the substrate S) and the cylindrical surface 40a have the same curvature, when the substrate S is bent and guided, the illumination light ELI is irradiated to the mask M. The irradiation surface and the projection light beam are irradiated onto the irradiated surface of the substrate S to have a cylindrical surface having the same curvature. In other words, the curvature of the mask M located in the field of view of the projection optical system PL is equal to the curvature of the substrate S located in the projection area of the projection optical system PL (that is, the region of the pattern Pm in the projected field of view). Therefore, the mask M and the substrate S will In the field of view of the projection optical system PL and in the projection region, the conjugate relationship is fully satisfied, and the projection image of the pattern Pm can be projected onto the substrate S in a comprehensive manner in the projection region.

因此，能取較大之狹縫狀照明光ELI之周長方向寬度，而能提高賦予基板S之感光層之每單位時間之能量，保持轉印至基板S之圖案像品質，同時提高光罩M之旋轉速度與基板S之搬送速度，而提高生產性。 Therefore, it is possible to take the width of the slit-shaped illumination light ELI in the circumferential direction, and it is possible to increase the energy per unit time of the photosensitive layer applied to the substrate S, to maintain the pattern image quality transferred to the substrate S, and to improve the mask M. The rotation speed and the conveying speed of the substrate S improve productivity.

上游側滾筒81將基板S搬入搬送滾筒80。下游側滾筒82將基板S從搬送滾筒80搬出。上游側滾筒81及下游側滾筒82例如以既定之搬送速度搬送基板S。驅動裝置ACS調整上游側滾筒81及下游側滾筒82之旋轉速度。 The upstream side drum 81 carries the substrate S into the transfer drum 80. The downstream side drum 82 carries out the substrate S from the transfer drum 80. The upstream side drum 81 and the downstream side drum 82 convey the board|substrate S by the predetermined conveyance speed, for example. The drive unit ACS adjusts the rotational speeds of the upstream side drum 81 and the downstream side drum 82.

驅動裝置ACS係根據來自圖1中所示之控制部CONT之控制訊號調整搬送滾筒80之旋轉速度之控制及上游側滾筒81及下游側滾筒82之旋轉速度，藉此調整基板S之搬送速度。控制部CONT，係以光罩M之旋轉速度(周速度)與基板S之搬送速度為既定關係且穩定之方式，控制光罩側之驅動裝置ACM之驅動及驅動裝置ACS之驅動。 The drive unit ACS adjusts the rotational speed of the transport drum 80 and the rotational speed of the upstream side drum 81 and the downstream side drum 82 based on the control signal from the control unit CONT shown in FIG. 1, thereby adjusting the transport speed of the substrate S. The control unit CONT controls the driving of the driving device ACM on the mask side and the driving of the driving device ACS such that the rotation speed (circumferential speed) of the mask M and the conveying speed of the substrate S are constant and stable.

具體而言，控制部CONT係以相對於沿圓筒面40a之光罩M之移動速度(周速度)之、基板S往長度方向之搬送速度(亦即，基板S表面之移動速度)之比與投影光學系PL之投影倍率(縮小、等倍、擴大之任一者)成為相等之方式，控制驅動裝置ACM之驅動及驅動裝置ACS之驅動。 Specifically, the control unit CONT is a ratio of the transport speed of the substrate S in the longitudinal direction (that is, the moving speed of the surface of the substrate S) with respect to the moving speed (circumferential speed) of the mask M along the cylindrical surface 40a. The driving of the driving device ACM and the driving of the driving device ACS are controlled so as to be equal to the projection magnification (reduction, equal magnification, and expansion) of the projection optical system PL.

以上述方式構成之曝光裝置EX，由於係如圖2所示排列配置於Y方向，因此設於各曝光裝置EX之光罩保持裝置 MST及投影光學系PL係於Y方向(與基板S之搬送方向(X方向)交叉之方向)排列配置有複數個。又，光罩保持裝置MST配置成於X方向(基板S之搬送方向)每隔既定距離偏移。 Since the exposure apparatus EX configured as described above is arranged in the Y direction as shown in FIG. 2, the mask holding device provided in each exposure apparatus EX is provided. The MST and the projection optical system PL are arranged in a plurality in the Y direction (a direction intersecting the transport direction (X direction) of the substrate S). Further, the mask holding device MST is disposed to be shifted by a predetermined distance in the X direction (the transport direction of the substrate S).

以上述方式構成之基板處理裝置100藉由控制部CONT之控制，藉由捲軸方式製造有機EL元件、液晶顯示元件等顯示元件(電子元件)。 In the substrate processing apparatus 100 configured as described above, a display element (electronic element) such as an organic EL element or a liquid crystal display element is manufactured by a reel method under the control of the control unit CONT.

以下，說明使用上述構成之基板處理裝置100製造顯示元件之步驟(參照圖1~圖6)。 Hereinafter, a procedure of manufacturing a display element using the substrate processing apparatus 100 having the above configuration will be described (see FIGS. 1 to 6).

首先，在圖1所示之構成中，首先，將捲纏於未圖示之滾筒之帶狀基板S安裝於基板供應部2。 First, in the configuration shown in FIG. 1, first, the tape substrate S wound around a roller (not shown) is attached to the substrate supply unit 2.

控制部CONT以從此狀態從基板供應部2送出前述基板S之方式使未圖示之滾筒旋轉。接著，以設於基板回收部4之未圖示之滾筒捲取通過基板處理部3之前述基板S。藉由控制此基板供應部2及基板回收部4，能將基板S之被處理面Sa對基板處理部3連續地搬送。 The control unit CONT rotates the drum (not shown) so that the substrate S is sent out from the substrate supply unit 2 from this state. Then, the substrate S passing through the substrate processing unit 3 is taken up by a roller (not shown) provided in the substrate collecting portion 4. By controlling the substrate supply unit 2 and the substrate collection unit 4, the processed surface Sa of the substrate S can be continuously conveyed to the substrate processing unit 3.

控制部CONT，在基板S從基板供應部2送出後至以基板回收部4捲取之期間，係藉由基板處理部3之搬送裝置20使基板S在前述基板處理部3內適當地搬送，同時藉由處理裝置10將顯示元件之構成要素依序形成於基板S上。在此步驟中，藉由曝光裝置EX進行處理時，首先將光罩M安裝於光罩保持裝置MST之筒構件40。又，藉由基板搬送裝置SST之搬送滾筒80導引基板S。 In the control unit CONT, the substrate S is appropriately transported in the substrate processing unit 3 by the transport device 20 of the substrate processing unit 3 after the substrate S is fed from the substrate supply unit 2 to the time of the substrate recovery unit 4 being wound up. At the same time, the constituent elements of the display elements are sequentially formed on the substrate S by the processing device 10. In this step, when the processing is performed by the exposure device EX, the photomask M is first attached to the tubular member 40 of the mask holding device MST. Moreover, the substrate S is guided by the transport roller 80 of the substrate transfer device SST.

其次，控制部CONT藉由驅動裝置ACM使筒構件40 旋轉，並同時從光源裝置21使照明光ELI射出(參照圖1、圖3)。藉由筒構件40之旋轉，光罩M與前述筒構件40一體地移動於旋轉方向。又，控制部CONT與筒構件40之旋轉同步地使搬送滾筒80旋轉。藉由搬送滾筒80之旋轉，基板S與光罩M同步移動。 Next, the control unit CONT causes the tubular member 40 by the driving device ACM. The illumination light ELI is emitted from the light source device 21 while rotating (see FIGS. 1 and 3). By the rotation of the tubular member 40, the mask M is integrally moved with the cylindrical member 40 in the rotational direction. Moreover, the control unit CONT rotates the transport drum 80 in synchronization with the rotation of the tubular member 40. The substrate S moves in synchronization with the mask M by the rotation of the transport roller 80.

此外，同步控制之主從關係，亦可係如上所述地以光罩M側之筒構件40之旋轉為基準追隨控制基板S側之搬送滾筒80之旋轉，亦可相反地，以基板S之搬送為基準使光罩M之旋轉追隨控制。 Further, the master-slave relationship of the synchronous control may follow the rotation of the transport roller 80 on the control substrate S side with reference to the rotation of the tubular member 40 on the mask M side as described above, or conversely, the substrate S The rotation is followed by the control of the rotation of the mask M as a reference.

從光源裝置21射出之照明光ELI經由照射光學系22狹縫狀地照射於移動之光罩M上。前述照明光ELI依序透射光罩M及第一開口部41(或第二開口部42)，射入設於筒構件40內部之投影光學系PL之透鏡系51。 The illumination light ELI emitted from the light source device 21 is irradiated onto the moving mask M through the illumination optical system 22 in a slit shape. The illumination light ELI is sequentially transmitted through the mask M and the first opening 41 (or the second opening 42), and is incident on the lens system 51 of the projection optical system PL provided inside the tubular member 40.

藉由照明光ELI之照射而從光罩M產生之投影用光束，通過透鏡系51往反射鏡52導光，藉由反射鏡52而被反射往配置於筒構件40內側空間之透鏡系53之圓形視野區域之一半(參照圖3~圖6)。 The projection light beam generated from the mask M by the illumination light ELI is guided by the lens system 51 to the mirror 52, and is reflected by the mirror 52 to the lens unit 53 disposed in the space inside the tubular member 40. One and a half of the circular field of view (see Figures 3 to 6).

通過透鏡系53之大致一半之視野區域往筒構件40之+Z側外部射出之投影用光束，被凹面鏡54之反射面54a反射往-Z側。被反射之投影用光束以通過透鏡系53之另一大致一半之視野區域之方式被往-Z方向導光，再度射向筒構件40之第二端面40c。 The projection light beam which is emitted to the outside of the +Z side of the tubular member 40 by the substantially half of the field of view of the lens system 53 is reflected by the reflection surface 54a of the concave mirror 54 toward the -Z side. The reflected projection light beam is guided to the -Z direction by the other half of the field of view of the lens system 53, and is again incident on the second end surface 40c of the tubular member 40.

如上述，從第一端面40b側射入筒構件40內部空間之透鏡系53之投影用光束，以回避反射鏡52之方式通過前 述反射鏡52之-X側往第二端面40c側行進。其後，投影用光束經由成像用透鏡系55照射至基板S。藉此，圖案Pm之像投影至基板S之投影區域PA。 As described above, the projection light beam of the lens system 53 that enters the internal space of the tubular member 40 from the first end surface 40b side passes before the mirror 52 is circumvented. The -X side of the mirror 52 travels toward the second end face 40c side. Thereafter, the projection light beam is irradiated to the substrate S via the imaging lens system 55. Thereby, the image of the pattern Pm is projected onto the projection area PA of the substrate S.

本實施形態中，如圖2所示係使用四個曝光裝置EX1~EX4進行曝光處理。因此，如圖7所示，於基板S上，形成僅藉由投影至投影區域PA1~PA4之單獨之像曝光之部分、藉由投影至投影區域PA1之像之一部分與投影至投影區域PA2之像之一部分曝光之部分、藉由投影至投影區域PA2之像之一部分與投影至投影區域PA3之像之一部分曝光之部分、以及藉由投影至投影區域PA3之像之一部分與投影至投影區域PA4之像之一部分曝光之部分。藉由如上述進行曝光動作，於基板S上形成在Y方向連結四片光罩M之各圖案Pm之像之大面積之曝光圖案PX。 In the present embodiment, as shown in Fig. 2, exposure processing is performed using four exposure apparatuses EX1 to EX4. Therefore, as shown in FIG. 7, on the substrate S, a portion which is exposed only by a single image projected to the projection areas PA1 to PA4, a portion projected by the image projected to the projection area PA1, and a projection onto the projection area PA2 are formed. a portion that is partially exposed, a portion that is partially exposed by one of the images projected to the projection area PA2, and a portion that is projected to the projection area PA3, and a portion that is projected to the projection area PA4 by being projected to the projection area PA3 Part of the image that is partially exposed. By performing the exposure operation as described above, a large-area exposure pattern PX connecting the images of the respective patterns Pm of the four masks M in the Y direction is formed on the substrate S.

如此，安裝於四個曝光裝置EX1~EX4之各個之光罩M之圖案Pm，由於其結果需要在於基板S上連結之狀態下被投影曝光(掃描曝光)，因此保持於各曝光裝置之光罩保持裝置MST(筒構件40)之光罩M接收照明光ELI之照射而開始曝光之時點，係依序錯開各投影區域PA1~PA4在X方向之間隔距離BL與基板S之搬送速度Vs之比(BL/Vs)。 In this way, the pattern Pm of the mask M attached to each of the four exposure apparatuses EX1 to EX4 is projected and exposed (scanning exposure) in a state in which the substrate S is connected, so that the mask is held by each exposure apparatus. When the mask M of the holding device MST (the tube member 40) receives the illumination light ELI and starts to expose, the ratio of the distance G between the projection areas PA1 to PA4 in the X direction and the transport speed Vs of the substrate S is sequentially shifted. (BL/Vs).

如上所述，根據本實施形態，先沿筒構件40之圓筒面40a配置圖案Pm，並設置從前述圖案Pm產生之轉印用之光(投影用光束)會在筒構件40內部往第一端面40b側及第二端面40c側改變行進方向之反射鏡52(偏向構件)。藉此，原理上，不論於筒構件40之圓筒面40a之周長方向何處形 成有光罩圖案，均能投影曝光，無需於筒構件40之圓筒面40a配置使來自圖案Pm之光再度通過之光通過部(窗部)等，能沿圓筒面40a之周方向捲纏複數個光罩M或一片長的光罩。 As described above, according to the present embodiment, the pattern Pm is placed along the cylindrical surface 40a of the tubular member 40, and the light for transfer (projection light beam) generated from the pattern Pm is placed first inside the tubular member 40. The end surface 40b side and the second end surface 40c side change the mirror 52 (biasing member) in the traveling direction. Thereby, in principle, regardless of the circumferential direction of the cylindrical surface 40a of the tubular member 40, Each of the reticle patterns can be projected and exposed, and it is not necessary to arrange the light passing portion (window portion) or the like for the light from the pattern Pm to pass through the cylindrical surface 40a of the tubular member 40, and can be rolled in the circumferential direction of the cylindrical surface 40a. A plurality of reticle M or a long reticle is wrapped.

因此，藉由一邊使前述筒構件40旋轉、一邊照射照明光ELI，即能對基板S連續使圖案Pm之像曝光。藉此，能對基板S進行有效率之曝光處理。 Therefore, by irradiating the illumination light ELI while rotating the cylindrical member 40, the image of the pattern Pm can be continuously exposed to the substrate S. Thereby, the substrate S can be subjected to an efficient exposure process.

本發明之技術範圍不限定於上述實施形態，能在不脫離本發明之主旨之範圍內適當加以變更。 The technical scope of the present invention is not limited to the above-described embodiments, and can be appropriately modified without departing from the spirit and scope of the invention.

例如，上述實施形態中，雖係舉於筒構件40安裝有兩片光罩M之構成為例來說明，但並不限於此，亦可係能安裝三片以上之光罩M之構成，或亦可使投影光學系PL為例如具有兩倍以上之放大倍率之放大投影光學系。 For example, in the above-described embodiment, the configuration in which the two masks M are attached to the tubular member 40 is described as an example. However, the present invention is not limited thereto, and a configuration in which three or more masks M can be attached, or The projection optical system PL may be, for example, an enlarged projection optical system having a magnification of twice or more.

圖8係表示第二實施形態之立體圖，係組合有能於圓周安裝相同尺寸之光罩M三片之光罩保持裝置MST(筒構件40)與放大投影光學系PL之情形之曝光裝置構成例。 Fig. 8 is a perspective view showing a configuration of an exposure apparatus in which a mask holding device MST (cylinder member 40) capable of circumferentially mounting three masks M of the same size and an enlarged projection optical system PL are combined. .

圖8所示之構成中，與第一實施形態同樣地，在藉由鋁等輕金屬、銦等低熱膨脹金屬、含有碳之複合材、陶瓷等形成為中空圓筒狀之筒構件40之外周壁，作為複數個開口部OP形成有第一開口部41、第二開口部42及第三開口部43之三個開口部。此外，藉由將筒構件40以鋁或複合材形成，而能使筒構件40較輕量。此外，雖省略圖示，但筒構件40係具有於周方向排列之四個以上之開口部之構成，亦可係能於各開口部安裝光罩M之構成。 In the configuration shown in FIG. 8 , in the same manner as in the first embodiment, the outer peripheral wall of the hollow cylindrical member 40 is formed of a light metal such as aluminum, a low thermal expansion metal such as indium, a composite material containing carbon, or ceramics. Three openings of the first opening portion 41, the second opening portion 42, and the third opening portion 43 are formed as a plurality of openings OP. Further, the tubular member 40 can be made lighter by forming the tubular member 40 in aluminum or a composite material. In addition, although the illustration is omitted, the tubular member 40 has a configuration in which four or more openings are arranged in the circumferential direction, and a configuration in which the mask M can be attached to each opening may be employed.

先前之第一實施形態中，雖舉設於筒構件40內部之反射鏡(光學構件)52為一個之情形為例進行了說明，而第二實施形態中，由於係如圖8所示之放大投影系，因此組合三片反射鏡52A,52B,52C。 In the first embodiment, the case where the mirror (optical member) 52 inside the tubular member 40 is one is described as an example, and in the second embodiment, it is enlarged as shown in FIG. The projection system thus combines three mirrors 52A, 52B, 52C.

本實施形態中亦同樣地，照明光ELI照射在筒構件40之圓筒面40a(光罩M之圖案面)上延伸於Z方向之狹縫狀照明區域ILS。 In the same manner as in the present embodiment, the illumination light ELI is applied to the slit-shaped illumination region ILS extending in the Z direction on the cylindrical surface 40a of the tubular member 40 (the pattern surface of the mask M).

圖8中，AX係表示透鏡系之光軸，此情形下，光罩M上之圖案Pm中在照明區域ILS內產生之投影用光束，經由具有與X軸平行之光軸AX之透鏡系51到達第一反射鏡52A。此時，投影用光束係通過相對於透鏡系51視野內之光軸AX往+Y方向偏心之區域，到達反射鏡52A(反射面在YZ面內為45度之傾斜)。 In Fig. 8, AX indicates the optical axis of the lens system. In this case, the projection light beam generated in the illumination region ILS in the pattern Pm on the mask M passes through the lens system 51 having the optical axis AX parallel to the X-axis. The first mirror 52A is reached. At this time, the projection light beam passes through the region eccentric to the +Y direction with respect to the optical axis AX in the field of view of the lens system 51, and reaches the mirror 52A (the reflection surface is inclined at 45 degrees in the YZ plane).

被第一反射鏡52A垂直(+Z方向)反射之投影用光束，射入構成反折射投影光學系之透鏡系53與凹面鏡54(亦可係平面鏡)，在瞳位置或配置於其附近之凹面鏡54反射，而再度經由透鏡系53與反射鏡52A返回往透鏡系51方向。 The projection light beam reflected by the first mirror 52A in the vertical direction (+Z direction) is incident on the lens system 53 constituting the catadioptric projection optical system and the concave mirror 54 (which may also be a plane mirror), and is disposed at a 瞳 position or a concave mirror disposed in the vicinity thereof. The reflection 54 is again returned to the direction of the lens system 51 via the lens system 53 and the mirror 52A.

其返回光(投影用光束)由於相對於透鏡系51之光軸AX往-Y方向偏心，因此在第二反射鏡52B往+Y方向反射。反射鏡52B之反射面在XY面內觀看之情況下具有45度之傾斜，相對於透鏡系51之光軸AX配置於-Y側。 Since the return light (light beam for projection) is eccentric to the -Y direction with respect to the optical axis AX of the lens system 51, it is reflected by the second mirror 52B in the +Y direction. The reflecting surface of the mirror 52B has an inclination of 45 degrees when viewed in the XY plane, and is disposed on the -Y side with respect to the optical axis AX of the lens system 51.

被第二反射鏡52B反射往+Y方向之投影用光束到達第三反射鏡52C(反射面在YZ面內為45度之傾斜)，在此處被往-Z方向反射。被第三反射鏡52C反射之投影用光束從筒 構件40之第二端面40c往-Z側射出，經由成像用透鏡系55照射至在基板S上於Y方向狹縫狀延伸之投影區域PA。 The projection light beam reflected by the second mirror 52B in the +Y direction reaches the third mirror 52C (the reflection surface is inclined at 45 degrees in the YZ plane), and is reflected here in the -Z direction. Projection beam reflected by the third mirror 52C The second end surface 40c of the member 40 is emitted toward the -Z side, and is irradiated to the projection area PA extending in the Y direction on the substrate S via the imaging lens system 55.

本實施形態中，存在於光罩M上之狹縫狀照明區域ILS內之圖案Pm之部分像雖會放大成像於投影區域PA內，但於透鏡系53與凹面鏡54附加有透鏡系51之系為接近等倍之倍率，放大倍率係在其後之成像用透鏡系55獲得。 In the present embodiment, the partial image of the pattern Pm existing in the slit-shaped illumination region ILS on the mask M is enlarged and formed in the projection area PA, but the lens system 53 and the concave mirror 54 are attached with the lens system 51. In order to approximate the magnification of the magnification, the magnification is obtained in the subsequent imaging lens system 55.

成像用透鏡系55對倍率放大之助益較大、被要求之解像度(NA)並不非常高時，由於成像用透鏡系55亦只要一半的視野(half field)即可，因此能將投影用光束不通過之透鏡一部分切除，亦能將投影光學系PL之X方向尺寸作成較小型。 The imaging lens system 55 has a large benefit for magnification amplification, and when the required resolution (NA) is not very high, since the imaging lens system 55 is only required to have a half field (half field), projection can be used. The X-direction dimension of the projection optical system PL can also be made smaller by partially cutting out the lens through which the light beam does not pass.

又，當設投影光學系PL之放大倍率為Me時，筒構件40之圓筒面40a(光罩圖案面)之周速度Vm與基板S在搬送滾筒80上之周速度(進給速度)Vs必須保持Vs=Me．Vm之關係。 Further, when the magnification of the projection optical system PL is Me, the circumferential speed Vm of the cylindrical surface 40a (the mask pattern surface) of the tubular member 40 and the peripheral speed (feeding speed) Vs of the substrate S on the transport drum 80 Must maintain Vs=Me. The relationship between Vm.

假設Me=2.5，基板S之進給速度為100mm/秒時，安裝於筒構件40之光罩M之周速度必須為100/2.5=40mm/秒。 Assuming Me=2.5, when the feed rate of the substrate S is 100 mm/sec, the peripheral speed of the mask M attached to the tubular member 40 must be 100/2.5 = 40 mm/sec.

本實施形態中，雖係於筒構件40安裝三片光罩M，但所需之安裝片數，可根據於基板S上製作之顯示器之面板尺寸或筒構件40之實用徑來大致決定。 In the present embodiment, although three masks M are attached to the tubular member 40, the number of mounting sheets required can be roughly determined depending on the panel size of the display fabricated on the substrate S or the practical diameter of the tubular member 40.

例如，在40吋(16：9)之顯示器之情形，作為面板尺寸若考量周邊電路部，則為水平方向100cm(顯示區域約88cm)、垂直方向60cm(顯示區域約50cm)程度。 For example, in the case of a 40 吋 (16:9) display, the panel size is considered to be about 100 cm in the horizontal direction (about 88 cm in the display area) and 60 cm in the vertical direction (about 50 cm in the display area).

使面板之水平方向配合基板S之長條方向(X方向)時，若於基板S之寬度方向(Y方向)排列四台之曝光裝置EX1~EX4，則一台曝光裝置之投影區域PA之長度方向(Y方向)尺寸需為15cm以上。 When the horizontal direction of the panel is matched with the strip direction (X direction) of the substrate S, if four exposure apparatuses EX1 to EX4 are arranged in the width direction (Y direction) of the substrate S, the length of the projection area PA of one exposure apparatus The direction (Y direction) size needs to be 15 cm or more.

因此，若設圖8所示之放大投影光學系PL之放大倍率Me為2.5倍，則在光罩M上之照明區域ILS之長度方向(Z方向)尺寸、亦即圖案Pm之軸線C方向之尺寸需為6.0cm以上。 Therefore, if the magnification factor Me of the enlarged projection optical system PL shown in FIG. 8 is 2.5 times, the length direction (Z direction) of the illumination region ILS on the mask M, that is, the axis C direction of the pattern Pm. The size needs to be 6.0 cm or more.

另一方面，關於面板之水平方向，由於只要在基板S上於X方向放大2.5倍而成為100cm之尺寸即可，因此作為光罩M之周長只要最低40cm，使其具有欲度亦只要有45cm即可。 On the other hand, the horizontal direction of the panel may be 100 cm in size in the X direction on the substrate S. Therefore, as long as the circumference of the mask M is at least 40 cm, it is necessary to have a degree of 45cm can be.

然而，在使用捲起時為周長45cm之一片光罩時，筒構件40之圓筒面40a之最小徑為45/π≒14.3cm，於此種筒構件內部難以配置透鏡系或反射鏡。 However, when a roll of a mask having a circumference of 45 cm is used when rolling up, the minimum diameter of the cylindrical surface 40a of the tubular member 40 is 45 / π ≒ 14.3 cm, and it is difficult to arrange a lens system or a mirror inside such a tubular member.

因此，作為筒構件40，若估計能於內部空間組裝入透鏡系或反射鏡之直徑，假使將圓筒面40a之直徑設為45cm，則其周長為141.4cm。 Therefore, as the tubular member 40, it is estimated that the diameter of the lens system or the mirror can be incorporated in the internal space, and if the diameter of the cylindrical surface 40a is 45 cm, the circumference is 141.4 cm.

如先前所試算，將為了使面板之水平方向尺寸為100cm之光罩M之周長設為最低45cm時，則只要準備圓筒面40a之直徑為45cm之筒構件，即能於周方向隔開25cm之間隙並捲纏三片光罩M。 As a result of trial calculation, in order to set the circumference of the mask M having a horizontal dimension of 100 cm in the panel to a minimum of 45 cm, a cylindrical member having a diameter of 45 cm of the cylindrical surface 40a can be prepared, that is, 25 cm apart in the circumferential direction. The gap and the three masks M are wound.

此外，此情形下，若曝光時之基板S之進給速度(掃描速度)為100mm/秒時，則光罩M(圓筒面40a)之周速度為 400mm/秒，直徑45cm之筒構件40約3.53秒旋轉一圈。 Further, in this case, if the feed speed (scanning speed) of the substrate S at the time of exposure is 100 mm/sec, the peripheral speed of the mask M (cylindrical surface 40a) is At 400 mm/sec, the cylinder member 40 having a diameter of 45 cm was rotated once in about 3.53 seconds.

接著，在圖8所示之放大投影光學系PL之構成下，雖使用光路彎折用之三片平面鏡52A,52B,52C，但亦可以兩片來構成。 Next, in the configuration of the enlarged projection optical system PL shown in FIG. 8, three plane mirrors 52A, 52B, and 52C for optical path bending are used, but they may be configured in two.

圖9係顯示第三實施形態之投影光學系PL之構成之立體圖。 Fig. 9 is a perspective view showing the configuration of the projection optical system PL of the third embodiment.

圖9之放大投影光學系PL係相對圖8之投影光學系之配置整體旋轉90度者，光罩M之配置、照明光ELI之照射方向、狹縫狀之照射區域ILS之方向等與圖8之座標系XYZ相同。 The enlarged projection optical system PL of FIG. 9 is rotated by 90 degrees with respect to the arrangement of the projection optical system of FIG. 8, the arrangement of the mask M, the illumination direction of the illumination light ELI, the direction of the slit-shaped irradiation area ILS, and the like. The coordinate system XYZ is the same.

圖9之構成，係從圖8之構成除去第一反射鏡52A後之構成。圖9所示之構成中，投影光學系PL係沿照明光ELI之光路具有透鏡系51、透鏡系53、第二反射鏡52B、第三反射鏡52C及成像用透鏡系55。 The configuration of Fig. 9 is a configuration in which the first mirror 52A is removed from the configuration of Fig. 8. In the configuration shown in FIG. 9, the projection optical system PL includes a lens system 51, a lens system 53, a second mirror 52B, a third mirror 52C, and an imaging lens system 55 along the optical path of the illumination light ELI.

投影光學系PL中成像用透鏡系55以外之透鏡系51、透鏡系53、第二反射鏡52B及第三反射鏡52C配置於未圖示之筒構件40之內部空間。又，透鏡系51、透鏡系53、凹面鏡54(亦可係平面鏡)沿共通之光軸AX共軸配置，第二反射鏡52B在圖9中配置於透鏡系51之圓形視野之下半部、亦即相較於光軸AX往-Y方向側在XY面內傾斜45°而配置。 The lens system 51, the lens system 53, the second mirror 52B, and the third mirror 52C other than the imaging lens system 55 in the projection optical system PL are disposed in the internal space of the tubular member 40 (not shown). Further, the lens system 51, the lens system 53, the concave mirror 54 (which may be a plane mirror) are disposed coaxially along the common optical axis AX, and the second mirror 52B is disposed in the lower half of the circular field of view of the lens system 51 in FIG. That is, it is arranged so as to be inclined by 45° in the XY plane from the optical axis AX toward the -Y direction side.

在此構成中，從存在於光罩M上狹縫狀照明區域ILS內之圖案產生之投影用光束(主光線)通過在透鏡系51之圓形視野內從光軸AX往+Y方向偏心之區域，不被第二反射 鏡52B遮蔽而到達透鏡系53與凹面鏡54。 In this configuration, the projection light beam (main ray) generated from the pattern existing in the slit-shaped illumination region ILS of the mask M is eccentric from the optical axis AX to the +Y direction in the circular field of view of the lens system 51. Area, not second reflection The mirror 52B is shielded to reach the lens system 53 and the concave mirror 54.

與圖8同樣地，由於凹面鏡54配置於瞳位置或其附近，因此通過透鏡系51之視野上方區域(相對光軸AX為+Y方向)之光束在凹面鏡54反射後，再度射入透鏡系53，通過相對光軸AX往-Y方向偏心之區域而返回往透鏡系51。 Similarly to FIG. 8, since the concave mirror 54 is disposed at or near the 瞳 position, the light beam passing through the region above the field of view of the lens system 51 (the +Y direction with respect to the optical axis AX) is reflected by the concave mirror 54 and then incident on the lens system 53 again. Returning to the lens system 51 by the region eccentric to the -Y direction with respect to the optical axis AX.

該返回光束，在透鏡系51前方被第二反射鏡52B反射往+Y方向，被在YZ面內傾斜45°之第三反射鏡52C反射往-Z方向。在第三反射鏡52C反射之投影用光束射入負責放大倍率大部分之成像用透鏡系55，與圖8同樣地，光罩M之一部分圖案像成像於基板S上之於Y方向狹縫狀延伸之投影區域PA內。 The returning beam is reflected by the second mirror 52B in the +Y direction in front of the lens system 51, and is reflected in the -Z direction by the third mirror 52C which is inclined by 45 in the YZ plane. The projection light beam reflected by the third mirror 52C is incident on the imaging lens unit 55 which is responsible for most of the magnification. Similarly to FIG. 8, a part of the pattern image of the mask M is formed on the substrate S in the Y-direction slit shape. Extending in the projection area PA.

本實施形態中，由於構成投影光學系PL之透鏡系51、透鏡系53、凹面鏡54直線地配置，因此該部分之X方向尺寸亦可能較之前之圖8長。然而，在此情形下，只要增大構成光罩保持裝置MST之筒構件40之直徑，並採取使捲纏於圓筒面40a之周長方向之光罩M片數增加等之對應，即能與圖8同樣地實施有效率之曝光。 In the present embodiment, since the lens system 51, the lens system 53, and the concave mirror 54 constituting the projection optical system PL are linearly arranged, the X-direction dimension of the portion may be longer than that of the previous FIG. However, in this case, as long as the diameter of the tubular member 40 constituting the mask holding device MST is increased, and the number of the masks M wound in the circumferential direction of the cylindrical surface 40a is increased, it is possible to An efficient exposure is carried out in the same manner as in Fig. 8 .

若適用以圖8例示之具體數值，將光罩M之周長方向尺寸(Dm)設為45cm、將在周長方向之光罩間間隔(Gm)設為2cm，則捲纏四片光罩M所需之筒構件40之圓筒面40a之全周長(Cm)為Cm=4‧(Dm+Gm)=188cm，圓筒面40a之直徑為Cm/π≒60cm。 If the specific numerical value illustrated in Fig. 8 is applied, the circumferential direction dimension (Dm) of the mask M is set to 45 cm, and the interval between the masks (Gm) in the circumferential direction is set to 2 cm, and the four masks are wound. The total circumference (Cm) of the cylindrical surface 40a of the tubular member 40 required for M is Cm = 4‧ (Dm + Gm) = 188 cm, and the diameter of the cylindrical surface 40a is Cm / π ≒ 60 cm.

如上述，本實施形態中，雖筒構件40之徑有可能變大， 但由於省略一片平面反射鏡，因此亦有相對地能減低光亮損失(及熱吸收)，抑制投影光學系之光學特性變動之優點。 As described above, in the present embodiment, the diameter of the tubular member 40 may become large. However, since a single plane mirror is omitted, the light loss (and heat absorption) can be relatively reduced, and the optical characteristic variation of the projection optical system can be suppressed.

針對如以上之投影光學系PL之構成，能作成與上述實施形態相異之構成。以下，說明投影光學系PL之變形。此外，以下說明中，亦有省略筒構件40之圖示之情形。 With respect to the configuration of the projection optical system PL as described above, it is possible to have a configuration different from that of the above embodiment. Hereinafter, the deformation of the projection optical system PL will be described. Further, in the following description, the illustration of the tubular member 40 is also omitted.

圖10A及圖10B係顯示作為第四實施形態之投影光學系一形態之圖。圖10A及圖10B係針對相同構成從不同位置觀看時之圖。 10A and 10B are views showing a configuration of a projection optical system as a fourth embodiment. 10A and 10B are views when the same configuration is viewed from different positions.

圖10A及圖10B所示之投影光學系PL1具有平面反射鏡52、透鏡系53(透鏡系53A~53C)及凹面鏡54，構成為等倍透鏡系。 The projection optical system PL1 shown in FIGS. 10A and 10B has a plane mirror 52, a lens system 53 (lens systems 53A to 53C), and a concave mirror 54, and is configured as an equal-magnification lens system.

圖10A、圖10B之投影光學系PL1與圖6之構成同等，透鏡系53A~53C與凹面鏡54(亦可係平面鏡)共軸配置於相同光軸上，發揮半視野之等倍反折射成像系之功能。 The projection optical system PL1 of FIGS. 10A and 10B is equivalent to the configuration of FIG. 6, and the lens systems 53A to 53C and the concave mirror 54 (which may be plane mirrors) are disposed coaxially on the same optical axis, and exhibit a half-field equivalent eccentric refraction imaging system. The function.

反射鏡52係以其反射面在YZ面內傾斜45°之方式配置於基板S與透鏡系53A之間，但如以圖6所說明，為了使來自光罩M之投影用光束與射向基板S之投影用光束在空間上分離，在圖10A中僅設於較光軸下側(-X方向)之空間。 The mirror 52 is disposed between the substrate S and the lens system 53A such that the reflection surface thereof is inclined by 45° in the YZ plane. However, as illustrated in FIG. 6, the projection light beam from the mask M is directed toward the substrate. The projection light beam of S is spatially separated, and is provided only in the space on the lower side (-X direction) of the optical axis in Fig. 10A.

於Z方向狹縫狀延伸之照明光ELI照射圓筒狀之光罩M(旋轉之中心線與Z軸平行)時，從光罩M之圖案產生之投影用光束被反射鏡52反射往+Z側，經由透鏡系53之圓形視野區域下側(相對光軸為-X方向)射入配置於瞳面之凹面鏡54。被凹面鏡54反射往-Z側之投影用光束通過透鏡系 53之圓形視野區域上側(相對光軸為+X方向)，不被反射鏡52遮蔽而照射於基板S之被處理面Sa。 When the illumination light ELI extending in the slit direction in the Z direction illuminates the cylindrical mask M (the center line of rotation is parallel to the Z axis), the projection light beam generated from the pattern of the mask M is reflected by the mirror 52 to the +Z On the side, the concave mirror 54 disposed on the kneading surface is incident through the lower side of the circular field of view region of the lens system 53 (the -X direction with respect to the optical axis). The projection beam reflected by the concave mirror 54 to the -Z side passes through the lens system The upper side of the circular field of view area 53 (the +X direction with respect to the optical axis) is irradiated onto the processed surface Sa of the substrate S without being shielded by the mirror 52.

圖10A、圖10B中，雖圓筒狀之光罩M之徑圖示為相對較小，但由於投影光學系PL1之投影倍率為等倍，因此於基板S之進給方向轉印尺寸100cm之面板用圖案時，光罩M之周長亦需為100cm以上、例如110cm程度。 In FIGS. 10A and 10B, although the diameter of the cylindrical mask M is relatively small, since the projection magnification of the projection optical system PL1 is equal, the transfer size is 100 cm in the feeding direction of the substrate S. When the pattern for the panel is used, the circumference of the mask M needs to be 100 cm or more, for example, 110 cm.

若假定已於筒構件40捲纏有一片上述之光罩，筒構件40之圓筒面40a之全周長(Cm)，使其具有欲度時為120cm程度，筒構件40(圓筒面40a)之直徑為約39cm。然而，由於於筒構件40之圓筒面40a需有用以露出光罩M之圖案Pm之開口部(41,42等)，因此難以作成捲纏一片光罩M之構成。因此，在此種情形下，為了捲纏兩片光罩M，反而必須作成直徑大之筒構件等來加以對應。 If it is assumed that one of the above-described reticle is wound around the tubular member 40, the entire circumference (Cm) of the cylindrical surface 40a of the tubular member 40 is about 120 cm when it is desired, and the cylindrical member 40 (cylindrical surface 40a) The diameter is about 39 cm. However, since the cylindrical surface 40a of the tubular member 40 is required to expose the opening portion (41, 42 or the like) of the pattern Pm of the mask M, it is difficult to form a single mask M. Therefore, in this case, in order to wind up the two masks M, it is necessary to make a cylindrical member having a large diameter or the like to correspond.

其次，參照圖11簡單說明本實施形態之變形例。 Next, a modification of this embodiment will be briefly described with reference to Fig. 11 .

前述各實施形態之光罩保持裝置MST之筒構件40，為了捲纏圖案化有形成於極薄玻璃板之遮光層之光罩M，而以金屬或複合材等成型為圓筒框狀。 The tubular member 40 of the mask holding device MST of each of the above-described embodiments is formed into a cylindrical frame shape by metal or composite material in order to wrap the mask M formed on the light shielding layer of the extremely thin glass sheet.

在此種構成之情形，用以捲纏一片光罩之圓筒狀框之構成雖為困難，但本實施形態之光罩保持裝置MST中，如圖11所示，例如係將以極薄玻璃板(或樹脂或塑膠之透明片)製作之光罩M透過對照明光ELI之透射率高之接著層貼附於具有數mm以上厚度之圓筒狀玻璃管GT內周面，並於玻璃管GT之端部固接有金屬或陶瓷之環構件Re。 In the case of such a configuration, the configuration of the cylindrical frame for winding a single mask is difficult. However, in the mask holding device MST of the present embodiment, as shown in FIG. 11, for example, a very thin glass is used. The mask M made of a plate (or a transparent sheet of resin or plastic) is attached to the inner peripheral surface of a cylindrical glass tube GT having a thickness of several mm or more through an adhesive layer having a high transmittance to the illumination light ELI, and is applied to the glass tube GT. The end of the ring is fixed with a metal or ceramic ring member Re.

作為玻璃管GT，只要透射率相對於曝光用之照明光 ELI之波長區為較高即可，能使用300~400nm左右之紫外線吸收較少之石英製作。 As the glass tube GT, as long as the transmittance is relative to the illumination light for exposure The wavelength range of the ELI is high, and it can be made of quartz having a low absorption of ultraviolet light of about 300 to 400 nm.

如上述，若使用較厚之玻璃管GT，以作為旋轉中心之軸線C成為垂直之方式構成光罩保持裝置MST時，即使係一片光罩，亦能高剛性且高精度地保持光罩圖案Pm。當然，本實施形態不限於保持一片光罩M之構成，如前述各實施形態所述，保持兩片以上之光罩之構成亦同樣地能適用。 As described above, when the mask holder MST is configured such that the axis C as the center of rotation is perpendicular to the glass tube GT, the mask pattern Pm can be held with high rigidity and high precision even with a single mask. . Of course, the present embodiment is not limited to the configuration in which one mask M is held. As described in the above embodiments, the configuration in which two or more masks are held can be similarly applied.

將以極薄玻璃板或樹脂膜等製作之片狀光罩捲纏於玻璃管GT時，亦可於一片片狀光罩上於周長方向排列複數個面板用圖案來加以形成。 When a sheet-like mask made of an extremely thin glass plate or a resin film or the like is wound around the glass tube GT, a plurality of pattern patterns for the panel may be formed on the sheet-like mask in the circumferential direction.

在本實施形態之情形，雖能使光罩M之圖案面(遮光層之形成面)在軸線C側，但若作為光罩M基材之極薄玻璃板等之平坦性或厚度不均係良好，亦可以圖案面為玻璃管GT之內周面側來貼合。 In the case of the present embodiment, the pattern surface (the surface on which the light shielding layer is formed) on the side of the axis C can be formed on the side of the axis C. However, the flatness or thickness unevenness of the extremely thin glass plate or the like as the base material of the mask M is It is good, and the pattern surface may be attached to the inner peripheral side of the glass tube GT.

再者，作為此種玻璃管GT能使用特別是內周面加工精度高者時，亦可於該內周面直接形成遮光層(鉻等)之圖案Pm。 In addition, when the glass tube GT can be used, in particular, when the inner peripheral surface has high processing precision, the pattern Pm of the light shielding layer (chromium or the like) may be directly formed on the inner peripheral surface.

其次，參照圖12A、12B簡單說明本實施形態之變形例。 Next, a modification of this embodiment will be briefly described with reference to Figs. 12A and 12B.

上述各實施形態所記載之曝光裝置EX中，作為光罩M雖使用使照明光ELI透射之透射型光罩，但在本實施形態中，係使用使照明光ELI反射之反射型光罩。此情形下，照明光ELI從圓筒內部被照射於形成於圓筒內面之反射型光罩圖案，設有將從該圖案射向圓筒內部之反射光往基板S投影之投影光學系。 In the exposure apparatus EX described in each of the above embodiments, a transmissive mask that transmits the illumination light ELI is used as the mask M. However, in the present embodiment, a reflection mask that reflects the illumination light ELI is used. In this case, the illumination light ELI is irradiated from the inside of the cylinder to the reflective mask pattern formed on the inner surface of the cylinder, and a projection optical system that projects the reflected light from the pattern into the cylinder to the substrate S is provided.

首先，藉由圖12A及圖12B說明此種反射投影光學系與反射型光罩(內面反射型圓筒光罩)之構成。 First, the configuration of such a reflection projection optical system and a reflection type photomask (inner surface reflection type cylindrical mask) will be described with reference to FIGS. 12A and 12B.

如圖12A所示，曝光裝置EX中，作為投影光學系PL2具有偏光分光器110、波長板111~113、透鏡系51、平面反射鏡52、透鏡系53、凹面鏡54、透鏡系55。 As shown in FIG. 12A, in the exposure apparatus EX, the projection optical system PL2 includes a polarization beam splitter 110, wave plates 111 to 113, a lens system 51, a plane mirror 52, a lens system 53, a concave mirror 54, and a lens system 55.

透鏡系51、53、凹面鏡54均為沿與Z軸平行之光軸AX配置成共軸，製作為直方體之光學塊之偏光分光器110亦於透鏡系51與透鏡系53間配置成成為光軸AX中心。 Each of the lens systems 51 and 53 and the concave mirror 54 is disposed coaxially along the optical axis AX parallel to the Z axis, and the polarizing beam splitter 110 which is an optical block of a rectangular parallelepiped is also disposed between the lens system 51 and the lens system 53 to be light. Axis AX center.

偏光分光器110之反射面110a配置成相對該圖中之XY平面及YZ平面分別傾斜45°，形成為射入之光之S偏光成分(縱振動)會反射，P偏光成分(橫振動)會透射。 The reflecting surface 110a of the polarizing beam splitter 110 is disposed so as to be inclined by 45° with respect to the XY plane and the YZ plane in the figure, and the S-polarized component (longitudinal vibration) of the incident light is reflected, and the P-polarized component (transverse vibration) is reflected. transmission.

波長板111~113係對正交之偏光成分之間賦予λ/4之相位差者。波長板111配置於偏光分光器110之+Z側，波長板112配置於偏光分光器110之-Z側，波長板113配置於偏光分光器110之-X側。 The wavelength plates 111 to 113 are provided with a phase difference of λ/4 between the orthogonal polarization components. The wave plate 111 is disposed on the +Z side of the polarization beam splitter 110, the wave plate 112 is disposed on the -Z side of the polarization beam splitter 110, and the wavelength plate 113 is disposed on the -X side of the polarization beam splitter 110.

透鏡系51配置於波長板111之+Z側，於透鏡系51之+Z側，光罩保持裝置MST之筒構件40配置成能以與Z軸平行之軸線C為中心旋轉。如圖12A及圖12B所示，於筒構件40之內周面圓筒狀地保持有光罩M。再者，如圖12B所示，於光罩M之內周面形成有圖案Pm。本實施態樣中，光罩M之內周面係以鋁等高光反射率之金屬層形成，積層於其上之圖案Pm係使用在照明光ELI之波長區(紫外)中光吸收率高之材料形成。 The lens system 51 is disposed on the +Z side of the wave plate 111, and on the +Z side of the lens system 51, the cylindrical member 40 of the mask holding device MST is disposed to be rotatable about an axis C parallel to the Z axis. As shown in FIGS. 12A and 12B, a mask M is held in a cylindrical shape on the inner circumferential surface of the tubular member 40. Further, as shown in FIG. 12B, a pattern Pm is formed on the inner circumferential surface of the mask M. In the present embodiment, the inner peripheral surface of the mask M is formed of a metal layer having a high light reflectance such as aluminum, and the pattern Pm laminated thereon is used in a wavelength region (ultraviolet) of the illumination light ELI. Material formation.

於光罩M之內周表面形成高反射率層，於其表面積層 藉由光吸收層而圖案化之圖案Pm之構成中，從殘留有光吸收層之圖案Pm不產生反射光，來自無光吸收層之高反射率層之部分之反射光作為投影用光束(成像光束)使用。 Forming a high reflectivity layer on the inner peripheral surface of the mask M on the surface layer thereof In the configuration of the pattern Pm patterned by the light absorbing layer, the reflected light is not generated from the pattern Pm in which the light absorbing layer remains, and the reflected light from the portion of the high reflectance layer of the non-light absorbing layer is used as a projection beam (imaging Beam) used.

此外，對照明光之反射與吸收之關係亦可為相反，亦可將作為基底層之光罩M之表面作成光吸收層，以高反射性材料製作積層於其上之圖案Pm。再者，在為內面反射型圓筒光罩時，如先前之圖5、圖8所示，由於不需於筒構件40形成大開口部，因此能將其本身之剛性極高地保持。 Further, the relationship between the reflection and absorption of the illumination light may be reversed, and the surface of the mask M as the base layer may be formed as a light absorbing layer, and the pattern Pm laminated thereon may be formed of a highly reflective material. Further, in the case of the inner-reflective cylindrical reticle, as shown in Figs. 5 and 8 above, since the large opening portion is not required to be formed in the tubular member 40, the rigidity thereof can be extremely high.

接著，在透鏡系51之+Z側，於筒構件40(圓筒狀之光罩M)之內部空間，如圖12B所示，配置有相對XY平面與XZ平面傾斜45°之平面反射鏡52。透鏡系53及凹面鏡54配置於波長板112之-Z側。成像用透鏡系55配置於波長板113之-X側。於成像用透鏡系55之-X側設有基板搬送裝置SST之搬送滾筒80(旋轉軸與X軸平行)，基板S之沿水平面(XY平面)往+X方向進入搬送滾筒80，此處捲纏約半周程度，並以往-X方向退出之方式搬送。 Next, on the +Z side of the lens system 51, in the internal space of the tubular member 40 (cylindrical mask M), as shown in Fig. 12B, a plane mirror 52 which is inclined by 45 with respect to the XZ plane with respect to the XY plane is disposed. . The lens system 53 and the concave mirror 54 are disposed on the -Z side of the wave plate 112. The imaging lens system 55 is disposed on the -X side of the wavelength plate 113. The transfer roller 80 of the substrate transfer device SST is disposed on the -X side of the imaging lens system 55 (the rotation axis is parallel to the X axis), and the substrate S enters the transfer roller 80 in the +X direction along the horizontal plane (XY plane). Wrap around for half a week, and in the past - X direction to withdraw.

在上述構成中進行曝光處理時，首先使藉由未圖示之光源或照明光學系調整成S偏光(直線偏光)之照明光ELI從偏光分光器110之+X側之面射入於-X方向。 When performing the exposure processing in the above configuration, first, the illumination light ELI adjusted to S-polarized light (linearly polarized light) by a light source or an illumination optical system (not shown) is incident on the +X side of the polarization beam splitter 110 from the -X side. direction.

照明光ELI被偏光分光器110之反射面110a反射往+Z方向。從偏光分光器110射出之照明光ELI藉由波長板111而轉換為從光之行進方向觀看時為右旋圓偏光，以此偏光狀態到達透鏡系51。 The illumination light ELI is reflected by the reflection surface 110a of the polarization beam splitter 110 in the +Z direction. The illumination light ELI emitted from the polarization beam splitter 110 is converted into right-handed circularly polarized light when viewed from the traveling direction of the light by the wavelength plate 111, and reaches the lens system 51 in the polarized state.

此外，以下說明中，圓偏光之旋轉方向(右旋、左旋) 均為從光之行進方向觀看。 In addition, in the following description, the direction of rotation of the circularly polarized light (right-handed, left-handed) They are all viewed from the direction of light travel.

其後，照明光ELI如圖12B所示，通過透鏡系51被設置於筒構件40之內部空間之反射鏡52反射往+Y側。被反射鏡52反射之照明光ELI(左旋圓偏光)照射於形成在筒構件40內周面之光罩M(圖案Pm)。 Thereafter, as shown in FIG. 12B, the illumination light ELI is reflected by the mirror 52 provided in the internal space of the tubular member 40 to the +Y side. The illumination light ELI (left-handed circularly polarized light) reflected by the mirror 52 is irradiated onto the mask M (pattern Pm) formed on the inner circumferential surface of the tubular member 40.

由圖12B之配置可清楚得知，照射於光罩M(圖案Pm)之照明光ELI必須為以覆蓋圖案PmZ方向寬度之方式於Z方向狹縫狀延伸之光束。 As is clear from the arrangement of Fig. 12B, the illumination light ELI irradiated to the mask M (pattern Pm) must be a light beam extending in a slit shape in the Z direction so as to cover the width in the direction of the pattern PmZ.

為此，在將照明光ELI投射於偏光分光器110之照明光學系之光路中，係在與光罩M(圖案Pm)之面在光學上共軛之位置使照明光ELI之剖面形狀(強度分布)成為狹縫狀。 Therefore, in the optical path of the illumination optical system in which the illumination light ELI is projected to the polarizing beam splitter 110, the cross-sectional shape (intensity) of the illumination light ELI is made optically conjugate with the surface of the mask M (pattern Pm). The distribution is in the form of a slit.

圖12A中，未圖示之照明光學系之光軸雖設定成在偏光分光器110之中心與光軸AX正交，但若該照明光學系之光軸在圖12A中與X軸平行延伸，則在照明光學系內與光罩面共軛之面之照明光ELI之剖面形狀成為於Y方向狹縫狀延伸者。 In FIG. 12A, the optical axis of the illumination optical system (not shown) is set to be orthogonal to the optical axis AX at the center of the polarization beam splitter 110. However, if the optical axis of the illumination optical system extends parallel to the X-axis in FIG. 12A, Then, the cross-sectional shape of the illumination light ELI on the surface conjugated to the mask surface in the illumination optical system is a slit-like extension in the Y direction.

照射於光罩M之照明光ELI中照射於被以光吸收層圖案化之圖案Pm以外之部分而反射之光成為投影用光束往圖12B中之-Y側行進。 The light that is irradiated onto the illumination light ELI of the mask M and irradiated to a portion other than the pattern Pm patterned by the light absorption layer becomes a projection light beam that travels toward the -Y side in FIG. 12B.

在光罩M反射之投影用光束(右旋圓偏光)被反射鏡52反射往-Z側，被前述反射鏡反射之投影用光束(左旋圓偏光)經由透鏡系51在-Z方向透射波長板111。此時，圓偏光之投影用光束藉由波長板111被轉換為P偏光(直線偏光)。 The projection light beam (right-handed circularly polarized light) reflected by the mask M is reflected by the mirror 52 toward the -Z side, and the projection light beam (left-handed circularly polarized light) reflected by the above-mentioned mirror transmits the wavelength plate in the -Z direction via the lens system 51. 111. At this time, the light beam for projection of the circularly polarized light is converted into P-polarized light (linearly polarized light) by the wavelength plate 111.

P偏光之投影用光束射入偏光分光器110，直接透射過 反射面110a，通過波長板112而被轉換為右旋圓偏光。前述投影用光束(右旋圓偏光)，經由透鏡系53被導至配置於瞳位置之凹面鏡54，在凹面鏡54被反射往+Z方向。 The P-polarized projection beam is incident on the polarizing beam splitter 110 and directly transmitted through The reflecting surface 110a is converted into right-handed circularly polarized light by the wavelength plate 112. The projection light beam (right-handed circularly polarized light) is guided to the concave mirror 54 disposed at the 瞳 position via the lens system 53, and is reflected by the concave mirror 54 in the +Z direction.

被凹面鏡54反射之投影用光束(左旋圓偏光)，係於透鏡系53逆行進而再度射入波長板112，被轉換為S偏光後，射入偏光分光器110。射入偏光分光器110之投影用光束(S偏光)，被反射面110a反射往-X方向，射出偏光分光器110而通過波長板113被轉換為右旋圓偏光，經由成像用透鏡系55照射於基板S上之於Y方向狹縫狀延伸之投影區域PA內。 The projection light beam (left-handed circularly polarized light) reflected by the concave mirror 54 is incident on the lens plate 53 and re-entered into the wave plate 112, converted into S-polarized light, and then incident on the polarization beam splitter 110. The projection light beam (S-polarized light) incident on the polarization beam splitter 110 is reflected by the reflection surface 110a in the -X direction, is emitted from the polarization beam splitter 110, is converted into right-handed circular polarization by the wavelength plate 113, and is irradiated through the imaging lens system 55. The projection area PA on the substrate S extending in a slit shape in the Y direction.

圖12A之投影光學系PL2，係從投影用光束通過之光罩M至凹面鏡54為止之光路與從凹面鏡54至基板S之光路隔著瞳面光學上對稱之系，光罩M之反射圖案像以等倍成像投影於基板S之投影區域PA內。 The projection optical system PL2 of Fig. 12A is an optical path from the mask M through which the projection beam passes to the concave mirror 54 and an optical path from the concave mirror 54 to the substrate S. The reflection pattern of the mask M is optically symmetrical. The image is projected in the projection area PA of the substrate S in an equal magnification.

當然，只要將成像用透鏡系55替換成先前圖8、圖9所示之具有放大倍率之透鏡構成，即能進行相同之放大投影曝光。 Of course, as long as the imaging lens system 55 is replaced with the lens configuration having the magnification shown in FIGS. 8 and 9, the same enlarged projection exposure can be performed.

又，圖12A所示之投影光學系PL2，係使照明光ELI具有特定之偏光特性，並藉由偏光分光器110與波長板111~113之組合，藉由偏光操作分離到達凹面鏡54之來自光罩M之投影用光束與在凹面鏡54反射而到達基板S之投影用光束。因此，藉由照明光ELI形成之光罩上之照明區域ILS或基板S上之投影區域PA能配置於光軸AX上，包含透鏡系51、53、55之圓形視野區域中心在內能以狹縫狀利 用。 Moreover, the projection optical system PL2 shown in FIG. 12A has the specific polarization characteristics of the illumination light ELI, and the light from the concave mirror 54 is separated by the polarization operation by the combination of the polarization beam splitter 110 and the wavelength plates 111-113. The projection beam of the cover M and the projection beam that is reflected by the concave mirror 54 and reach the substrate S. Therefore, the illumination area ILS on the reticle formed by the illumination light ELI or the projection area PA on the substrate S can be disposed on the optical axis AX, including the center of the circular field of view of the lens systems 51, 53, 55. Slit-like benefit use.

圖13係顯示本實施態樣之變形例之曝光裝置之概略構成，係顯示將先前以圖12A說明之投影光學系PL2與內面反射型圓筒光罩所構成之曝光裝置之複數台(此處為EX5,EX6之兩台)於基板S之搬送方向並置之例。 Fig. 13 is a view showing a schematic configuration of an exposure apparatus according to a modification of the embodiment, showing a plurality of exposure apparatuses including the projection optical system PL2 and the inner reflection type cylindrical mask previously described with reference to Fig. 12A. The case where the two parts of EX5 and EX6 are juxtaposed in the conveying direction of the substrate S.

圖13所示之構成中，係隔著搬送滾筒80於X方向對稱地配置有曝光裝置EX5及EX6。曝光裝置EX5係將圖案Pm投影至捲於搬送滾筒80之基板S之+X側投影區域PA5。曝光裝置EX6係將圖案Pm投影至捲於搬送滾筒80之基板S之-X側投影區域PA6。 In the configuration shown in Fig. 13, the exposure devices EX5 and EX6 are arranged symmetrically in the X direction via the transfer roller 80. The exposure device EX5 projects the pattern Pm onto the +X side projection area PA5 of the substrate S wound around the transport roller 80. The exposure device EX6 projects the pattern Pm onto the -X side projection area PA6 wound on the substrate S of the transport roller 80.

兩個投影區域PA5、PA6，作為搬送滾筒80之旋轉角度以180°對向配置，設有用以將基板S在搬送滾筒80捲纏180°以上之輔助性導引構件(夾持滾筒或空氣旋轉桿(Air-turn Bar)等)。 The two projection areas PA5 and PA6 are disposed to face each other at a rotation angle of the conveyance roller 80 at 180°, and are provided with an auxiliary guide member (clamping roller or air rotation) for winding the substrate S around the conveyance roller 80 by 180° or more. Rod (Air-turn Bar), etc.).

圖13中，由於具有與Y軸平行之旋轉中心之搬送滾筒80在YZ面內以順時針旋轉，基板S如箭頭般被搬送，因此於被處理面Sa最初被掃描曝光曝光裝置EX6(投影區域PA6)之光罩圖案像，在搬送滾筒80旋轉180°後，被掃描曝光曝光裝置EX5(投影區域PA5)之光罩圖案像。 In Fig. 13, since the conveyance roller 80 having the rotation center parallel to the Y-axis rotates clockwise in the YZ plane, the substrate S is conveyed as an arrow, so that the surface to be processed Sa is initially scanned by the exposure exposure apparatus EX6 (projection area) The reticle pattern image of PA6) is scanned by the reticle pattern image of the exposure exposure apparatus EX5 (projection area PA5) after the transport roller 80 is rotated by 180 degrees.

若將兩個投影區域PA5、PA6如先前圖2或圖7所示般於基板S上在Y方向相對錯開配置，則能使透過投影區域PA6條紋狀轉印至被處理面Sa上之圖案像與透過投影區域PA5條紋狀轉印至被處理面Sa上之圖案像在Y方向連結，而能製造更大之顯示器用之面板。 When the two projection areas PA5 and PA6 are relatively shifted in the Y direction on the substrate S as shown in FIG. 2 or FIG. 7, the pattern image which is transmissively transferred to the processed surface Sa by the projection area PA6 can be obtained. The pattern image which is striped-transferred to the surface to be processed Sa through the projection area PA5 is connected in the Y direction, and a larger panel for display can be manufactured.

又，圖12A所示之曝光裝置EX中，雖射入偏光分光器110之照明光ELI為S偏光，但並不限於此，亦可係使射入偏光分光器110之照明光ELI為P偏光之態樣。 Further, in the exposure apparatus EX shown in FIG. 12A, the illumination light ELI incident on the polarization beam splitter 110 is S-polarized light, but the illumination light ELI incident on the polarization beam splitter 110 may be P-polarized. The situation.

此情形下，如圖14所示，曝光裝置EX作為投影光學系具有偏光分光器110、波長板111~113、透鏡系51、反射鏡52、透鏡系53、凹面鏡54(亦可係平面鏡)、透鏡系55，相對於在偏光分光器110之反射面110a直進之光軸AX或在反射面110a彎折之光軸，透鏡系51~53、凹面鏡54係配置成共軸。 In this case, as shown in FIG. 14, the exposure apparatus EX has a polarization beam splitter 110, wave plates 111 to 113, a lens system 51, a mirror 52, a lens system 53, and a concave mirror 54 (which may be a plane mirror) as a projection optical system. The lens system 55 is disposed coaxially with respect to the optical axis AX that is straight in the reflection surface 110a of the polarization beam splitter 110 or the optical axis that is bent on the reflection surface 110a. The lens systems 51 to 53 and the concave mirror 54 are arranged coaxially.

偏光分光器110之反射面110a配置成相對XY平面及YZ平面分別傾斜45°。反射面110a使S偏光反射，使P偏光透射。 The reflecting surface 110a of the polarizing beam splitter 110 is disposed to be inclined by 45° with respect to the XY plane and the YZ plane, respectively. The reflecting surface 110a reflects the S polarized light and transmits the P polarized light.

配置於偏光分光器110周圍之波長板111~113，具有與先前圖12A中所示者相同之功能，波長板112配置於偏光分光器110之+X側，波長板113配置於偏光分光器110之-Z側。 The wavelength plates 111 to 113 disposed around the polarization beam splitter 110 have the same functions as those previously shown in FIG. 12A. The wavelength plate 112 is disposed on the +X side of the polarization beam splitter 110, and the wavelength plate 113 is disposed on the polarization beam splitter 110. -Z side.

透鏡系51配置於波長板111之+X側，於透鏡系51之+X側配置有光罩保持裝置MST之筒構件40。於筒構件40之內周面與圖12A、圖12B同樣地設有內面反射型之圓筒狀光罩M之圖案Pm。 The lens system 51 is disposed on the +X side of the wave plate 111, and the cylindrical member 40 of the mask holding device MST is disposed on the +X side of the lens system 51. A pattern Pm of the inner surface reflection type cylindrical mask M is provided on the inner circumferential surface of the tubular member 40 in the same manner as in FIGS. 12A and 12B.

反射鏡52配置於筒構件40內部，其反射平面配置成相對XY平面及YZ平面分別傾斜45°。透鏡系53及凹面鏡54配置於波長板112之+Z側。透鏡系55配置於波長板113之-Z側。於透鏡系55之-Z側設有基板搬送裝置SST之搬 送滾筒80，藉由使此搬送滾筒80繞旋轉中心Cxr周圍旋轉，基板S則捲纏於搬送滾筒80被搬送。 The mirror 52 is disposed inside the tubular member 40, and its reflection plane is disposed to be inclined by 45° with respect to the XY plane and the YZ plane, respectively. The lens system 53 and the concave mirror 54 are disposed on the +Z side of the wave plate 112. The lens system 55 is disposed on the -Z side of the wavelength plate 113. The substrate transport device SST is disposed on the -Z side of the lens system 55. The feed roller 80 is rotated around the rotation center Cxr by the conveyance roller 80, and the substrate S is wound around the conveyance drum 80 and conveyed.

在此構成中，係使P偏光之照明光ELI對偏光分光器110射入。此照明光ELI透射過反射面110a，被波長板111轉換為圓偏光，在反射鏡52被反射往-Y方向側後，照射內面反射型之圓筒光罩M。藉此，在光罩上之照明區域(此處為延伸於X方向之狹縫狀)內反射之光成為投影用光束返回至反射鏡52，通過透鏡系51返回至波長板111。 In this configuration, the P-polarized illumination light ELI is incident on the polarization beam splitter 110. The illumination light ELI is transmitted through the reflection surface 110a, converted into circularly polarized light by the wavelength plate 111, and after the mirror 52 is reflected to the -Y direction side, the inner surface reflection type cylindrical mask M is irradiated. Thereby, the light reflected in the illumination region (here, the slit shape extending in the X direction) on the reticle returns the projection light beam to the mirror 52, and returns to the wave plate 111 through the lens system 51.

從光罩M產生之投影用光束在波長板111被轉換為S偏光，射入偏光分光器110後，在反射面110a被反射往+Z側。其後，投影用光束藉由波長板112被轉換為圓偏光，射入透鏡系53、凹面鏡54。在凹面鏡54被反射往-Z方向之投影用光束經由透鏡系53射入波長板112，藉由波長板112被轉換為P偏光後，透射過偏光分光器110之反射面110a。其後，投影用光束藉由波長板113被轉換為圓偏光，通過透鏡系55照射於基板S。藉此，於基板S之被處理面Sa之投影區域PA形成圖案之像。 The projection light beam generated from the mask M is converted into S-polarized light by the wave plate 111, and is incident on the polarization beam splitter 110, and then reflected on the reflection surface 110a to the +Z side. Thereafter, the projection light beam is converted into circularly polarized light by the wavelength plate 112, and is incident on the lens system 53 and the concave mirror 54. The projection light beam reflected by the concave mirror 54 in the -Z direction is incident on the wave plate 112 via the lens system 53, and is converted into P-polarized light by the wavelength plate 112, and then transmitted through the reflection surface 110a of the polarization beam splitter 110. Thereafter, the projection light beam is converted into circularly polarized light by the wavelength plate 113, and is irradiated onto the substrate S through the lens system 55. Thereby, an image of the pattern is formed on the projection area PA of the processed surface Sa of the substrate S.

如上述，即使係使用反射型光罩作為光罩M，亦能藉由一邊使筒構件40旋轉一邊照射照明光ELI，對基板S將圖案Pm之像連續曝光。藉此，能對基板S進行有效率之曝光處理。 As described above, even if the reflective mask is used as the mask M, the illumination light ELI can be irradiated while rotating the tubular member 40, and the image of the pattern Pm can be continuously exposed to the substrate S. Thereby, the substrate S can be subjected to an efficient exposure process.

圖14之例中，雖圓筒狀之光罩M(筒構件40)設定為作為旋轉中心之軸線C與X軸平行，亦即橫置，但若曝光裝置之構成為使筒構件40縱置時，只要使圖14之整體構成 在紙面內旋轉90°即可。 In the example of Fig. 14, the cylindrical mask M (the tube member 40) is set such that the axis C as the center of rotation is parallel to the X-axis, that is, horizontally, but the exposure device is configured to vertically position the tubular member 40. As long as the overall composition of Figure 14 Rotate 90° inside the paper.

又，在圖14(或圖12A)之投影光學系之情形，只要透鏡系55之光軸AX之延長線設定為通過搬送滾筒80之旋轉中心Cxr，則由於能將由筒構件40、透鏡系51,53,55、反射鏡52、凹面鏡54、偏光分光器110、波長板111~113構成之曝光裝置整體在紙面內以任意角度配置，因此能將複數台曝光裝置配置於搬送滾筒80周圍並實施如先前圖7之曝光處理。 Further, in the case of the projection optical system of Fig. 14 (or Fig. 12A), since the extension line of the optical axis AX of the lens system 55 is set to pass through the rotation center Cxr of the transport roller 80, the cylindrical member 40 and the lens system 51 can be used. The exposure device including the 53, 55, the mirror 52, the concave mirror 54, the polarization beam splitter 110, and the wave plates 111 to 113 is disposed at an arbitrary angle in the plane of the paper. Therefore, a plurality of exposure devices can be disposed around the transfer roller 80 and implemented. The exposure process as in the previous Figure 7.

10‧‧‧處理裝置 10‧‧‧Processing device

20‧‧‧搬送裝置 20‧‧‧Transporting device

21‧‧‧光源裝置 21‧‧‧Light source device

22‧‧‧照射光學系 22‧‧‧Optical Optics

40‧‧‧筒構件 40‧‧‧Cylinder components

40a‧‧‧圓筒面 40a‧‧‧Cylinder

51‧‧‧透鏡系 51‧‧‧ lens system

52‧‧‧反射鏡 52‧‧‧Mirror

53‧‧‧透鏡系 53‧‧‧Lens system

54‧‧‧凹面鏡 54‧‧‧ concave mirror

55‧‧‧成像用透鏡系 55‧‧‧Photographic lens system

80‧‧‧搬送滾筒 80‧‧‧Transport roller

100‧‧‧基板處理裝置 100‧‧‧Substrate processing unit

S‧‧‧基板 S‧‧‧Substrate

CONT‧‧‧控制部 CONT‧‧‧Control Department

EX‧‧‧曝光裝置 EX‧‧‧Exposure device

M‧‧‧光罩 M‧‧‧Photo Mask

Pm‧‧‧圖案 Pm‧‧‧ pattern

IL‧‧‧照明裝置 IL‧‧‧Lighting device

PL‧‧‧投影光學系 PL‧‧‧Projection Optics

MST‧‧‧光罩保持裝置 MST‧‧‧Photomask Holder

ELI‧‧‧照明光 ELI‧‧‧Lighting

PA‧‧‧投影區域 PA‧‧‧Projection area

SST‧‧‧基板搬送裝置 SST‧‧‧Substrate transport device

ACS‧‧‧驅動裝置 ACS‧‧‧ drive

PX‧‧‧曝光圖案 PX‧‧‧ exposure pattern

圖1係顯示本實施形態之基板處理裝置之構成的概略圖。 Fig. 1 is a schematic view showing the configuration of a substrate processing apparatus of the present embodiment.

圖2係顯示本實施形態之處理裝置之構成的概略圖。 Fig. 2 is a schematic view showing the configuration of a processing apparatus of the embodiment.

圖3係顯示本實施形態之曝光裝置之構成的概略圖。 Fig. 3 is a schematic view showing the configuration of an exposure apparatus of the embodiment.

圖4係顯示本實施形態之光罩保持裝置之構成的概略圖。 Fig. 4 is a schematic view showing the configuration of a mask holding device of the embodiment.

圖5係顯示本實施形態之光罩保持裝置之旋轉驅動與微動之機構的概略圖。 Fig. 5 is a schematic view showing a mechanism for rotational driving and fretting of the mask holding device of the embodiment.

圖6係顯示本實施形態之投影光學系之構成的概略圖。 Fig. 6 is a schematic view showing the configuration of a projection optical system of the embodiment.

圖7係顯示本實施形態之曝光動作一態樣的概略圖。 Fig. 7 is a schematic view showing an aspect of the exposure operation of the embodiment.

圖8係顯示本實施形態變形例之光罩保持裝置之構成的概略圖。 Fig. 8 is a schematic view showing the configuration of a mask holding device according to a modification of the embodiment.

圖9係顯示本實施形態變形例之投影光學系之構成的概略圖。 Fig. 9 is a schematic view showing the configuration of a projection optical system according to a modification of the embodiment.

圖10A係顯示本實施形態變形例之投影光學系之構成的概略圖。 Fig. 10A is a schematic view showing the configuration of a projection optical system according to a modification of the embodiment.

圖10B係顯示本實施形態變形例之投影光學系之構成的概略圖。 Fig. 10B is a schematic view showing the configuration of a projection optical system according to a modification of the embodiment.

圖11係顯示本實施形態變形例之光罩保持裝置之構成的概略圖。 Fig. 11 is a schematic view showing the configuration of a mask holding device according to a modification of the embodiment.

圖12A係顯示本實施形態變形例之投影光學系之構成的概略圖。 Fig. 12A is a schematic view showing the configuration of a projection optical system according to a modification of the embodiment.

圖12B係顯示本實施形態變形例之投影光學系之構成的概略圖。 Fig. 12B is a schematic view showing the configuration of a projection optical system according to a modification of the embodiment.

圖13係顯示本實施形態變形例之曝光裝置之構成的概略圖。 Fig. 13 is a schematic view showing the configuration of an exposure apparatus according to a modification of the embodiment.

圖14係顯示本實施形態變形例之曝光裝置之構成的概略圖。 Fig. 14 is a schematic view showing the configuration of an exposure apparatus according to a modification of the embodiment.

21‧‧‧光源裝置 21‧‧‧Light source device

22‧‧‧照射光學系 22‧‧‧Optical Optics

40a‧‧‧圓筒面 40a‧‧‧Cylinder

40b‧‧‧第一端面 40b‧‧‧ first end face

40c‧‧‧第二端面 40c‧‧‧second end face

41(OP)‧‧‧第一開口部 41 (OP) ‧ ‧ first opening

42(OP)‧‧‧第二開口部 42 (OP)‧‧‧second opening

43‧‧‧第三開口部 43‧‧‧ third opening

44‧‧‧吸引泵 44‧‧‧Attraction pump

51‧‧‧透鏡系 51‧‧‧ lens system

52‧‧‧反射鏡 52‧‧‧Mirror

53‧‧‧透鏡系 53‧‧‧Lens system

54‧‧‧凹面鏡 54‧‧‧ concave mirror

54a‧‧‧反射面 54a‧‧‧reflecting surface

55‧‧‧成像用透鏡系 55‧‧‧Photographic lens system

80‧‧‧搬送滾筒 80‧‧‧Transport roller

80a‧‧‧圓筒面 80a‧‧‧Cylinder

81‧‧‧上游側滾筒 81‧‧‧Upstream side roller

82‧‧‧下游側滾筒 82‧‧‧Downside roller

ACM‧‧‧驅動裝置 ACM‧‧‧ drive

ACS‧‧‧驅動裝置 ACS‧‧‧ drive

ELI‧‧‧照明光 ELI‧‧‧Lighting

EX(EX1~EX4)‧‧‧曝光裝置 EX (EX1~EX4)‧‧‧Exposure device

IL‧‧‧照明裝置 IL‧‧‧Lighting device

M‧‧‧光罩 M‧‧‧Photo Mask

MST‧‧‧光罩保持裝置 MST‧‧‧Photomask Holder

PA(PA1~PA4)‧‧‧投影區域 PA (PA1~PA4)‧‧‧projection area

PL‧‧‧投影光學系 PL‧‧‧Projection Optics

Pm‧‧‧圖案 Pm‧‧‧ pattern

S‧‧‧基板 S‧‧‧Substrate

Sa‧‧‧被處理面 Sa‧‧‧Processed

SC‧‧‧光罩吸附部 SC‧‧‧Photomask Adsorption Department

SST‧‧‧基板搬送裝置 SST‧‧‧Substrate transport device

Claims (15)

一種基板處理裝置，係於基板之被處理面形成圖案，其具備：中空狀之光罩保持部，保持形成有前述圖案之光罩，能以旋轉軸為中心旋轉；控制裝置，控制前述光罩保持部之旋轉，且控制前述基板之搬送；以及光學系，具有配置於前述光罩保持部內部且使經由前述圖案之光在前述光罩保持部內部偏向之光學構件，用以將前述圖案形成於前述基板。 A substrate processing apparatus is formed in a pattern on a surface to be processed of a substrate, and includes a hollow mask holding portion, a photomask having the pattern formed thereon, and rotatable about a rotation axis, and a control device for controlling the mask a rotation of the holding portion and controlling the conveyance of the substrate; and an optical system having an optical member disposed inside the mask holding portion and biasing light passing through the pattern inside the mask holding portion to form the pattern On the aforementioned substrate. 如申請專利範圍第1項之基板處理裝置，其中，前述光學系，包含配置於前述光學構件與前述基板之間之第1部分光學系；前述光罩保持部繞前述第1部分光學系之光軸周圍旋轉。 The substrate processing apparatus according to claim 1, wherein the optical system includes a first partial optical system disposed between the optical member and the substrate, and the mask holding portion surrounds the first partial optical system Rotate around the shaft. 如申請專利範圍第2項之基板處理裝置，其中，前述光學系，包含凹面鏡與將經由前述圖案之光導至前述凹面鏡且將在前述凹面鏡反射之前述光導至前述光學構件之第2部分光學系；前述光學構件，係使經由前述第2部分光學系並在前述凹面鏡反射之前述光偏向前述第1部分光學系。 The substrate processing apparatus according to claim 2, wherein the optical system includes a concave mirror and a second partial optical system that guides the light passing through the pattern to the concave mirror and reflects the light guided by the concave mirror to the optical member; In the optical member, the light reflected by the concave mirror via the second partial optical system is biased toward the first partial optical system. 如申請專利範圍第3項之基板處理裝置，其中，前述第2部分光學系之至少一部分配置於前述光罩保持部之內部，前述凹面鏡配置於前述光罩保持部之外部。 The substrate processing apparatus according to claim 3, wherein at least a part of the second partial optical system is disposed inside the mask holding portion, and the concave mirror is disposed outside the mask holding portion. 如申請專利範圍第4項之基板處理裝置，其中，前述光罩保持部具有形成有圓筒面之中空狀圓筒構件；前述凹面鏡配置於前述中空狀圓筒構件之一端側外側，前述第1部分光學系之至少一部分配置於前述中空狀圓筒構件之另一端側外側。 The substrate processing apparatus according to claim 4, wherein the mask holding portion has a hollow cylindrical member having a cylindrical surface, and the concave mirror is disposed on an outer side of one end side of the hollow cylindrical member, the first At least a part of the partial optical system is disposed on the outer side of the other end side of the hollow cylindrical member. 如申請專利範圍第1至4項中任一項之基板處理裝置，其中，前述光罩保持部具有形成有圓筒面之中空狀圓筒構件；前述中空狀圓筒構件具有沿前述圓筒面保持前述光罩之保持機構。 The substrate processing apparatus according to any one of claims 1 to 4, wherein the mask holding portion has a hollow cylindrical member formed with a cylindrical surface; and the hollow cylindrical member has a cylindrical surface along the cylindrical surface The holding mechanism of the aforementioned reticle is maintained. 如申請專利範圍第6項之基板處理裝置，其中，前述光罩保持部具有與前述光罩中形成有前述圖案之圖案區域對應之開口部；前述保持機構設於前述開口部之周邊區域。 The substrate processing apparatus according to claim 6, wherein the mask holding portion has an opening corresponding to a pattern region in which the pattern is formed in the mask, and the holding mechanism is provided in a peripheral region of the opening. 如申請專利範圍第7項之基板處理裝置，其中，前述光罩係反射型光罩；前述光罩保持部將前述反射型光罩保持成前述反射型光罩之圖案設置於前述圓筒面之內側。 The substrate processing apparatus according to claim 7, wherein the mask is a reflective mask, and the mask holding portion holds the reflective mask in a pattern of the reflective mask on the cylindrical surface. Inside. 如申請專利範圍第8項之基板處理裝置，其具有從前述光罩保持部之內側向前述反射型光罩照射光之照明光學系。 A substrate processing apparatus according to claim 8 is characterized in that the substrate processing apparatus of the eighth aspect of the invention has an illumination optical system that emits light from the inside of the mask holding portion to the reflective mask. 如申請專利範圍第6項之基板處理裝置，其中，前述中空狀圓筒構件係以能透射前述光之材料形成；前述光罩係透射型光罩； 前述光罩保持部將前述透射型光罩保持成前述透射型光罩之圖案設置於前述圓筒面之內側。 The substrate processing apparatus of claim 6, wherein the hollow cylindrical member is formed of a material capable of transmitting the light; the reticle is a transmissive reticle; The mask holding portion holds the transmissive mask in a pattern in which the transmissive mask is disposed inside the cylindrical surface. 如申請專利範圍第7項之基板處理裝置，其中，前述光罩係透射型光罩；前述光罩保持部將前述透射型光罩保持成前述透射型光罩之圖案設置於前述圓筒面之內側。 The substrate processing apparatus according to claim 7, wherein the mask is a transmissive mask, and the mask holding portion holds the transmissive mask in a pattern of the transmissive mask on the cylindrical surface. Inside. 如申請專利範圍第10或11項之基板處理裝置，其具有從前述光罩保持部之外側向前述透射型光罩照射光之照明光學系。 The substrate processing apparatus according to claim 10 or 11, comprising an illumination optical system that emits light from the outer side of the mask holding portion to the transmissive mask. 如申請專利範圍第1至12項中任一項之基板處理裝置，其中，前述光罩保持部及前述光學系，係於與前述基板之搬送方向交叉之方向排列配置有複數個；前述複數個前述光罩保持部中之至少一個係於前述搬送方向偏移配置。 The substrate processing apparatus according to any one of claims 1 to 12, wherein the mask holding portion and the optical system are arranged in a plurality in a direction intersecting with a direction in which the substrate is conveyed; At least one of the mask holding portions is disposed offset from the transport direction. 如申請專利範圍第1至13項中任一項之基板處理裝置，其中，前述基板係帶狀之片基板；具有以前述被處理面沿圓筒面之方式搬送前述帶狀之片基板之基板搬送部；前述控制裝置係同步控制前述基板搬送部對前述片基板之搬送與前述光罩保持部之旋轉。 The substrate processing apparatus according to any one of claims 1 to 13, wherein the substrate-based substrate sheet has a substrate on which the surface of the strip is transferred to the cylindrical surface. a transport unit that synchronously controls the transport of the substrate transport unit to the sheet substrate and the rotation of the mask holding unit. 如申請專利範圍第1至14項中任一項之基板處理裝置，其中，前述光罩保持部之旋轉軸相對前述第1部分光學系之光軸傾斜或同軸或平行。 The substrate processing apparatus according to any one of claims 1 to 14, wherein the rotation axis of the mask holding portion is inclined or coaxial or parallel with respect to an optical axis of the first partial optical system.