TW201312120A - Electrical contact member - Google Patents

Electrical contact member Download PDF

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Publication number
TW201312120A
TW201312120A TW101121579A TW101121579A TW201312120A TW 201312120 A TW201312120 A TW 201312120A TW 101121579 A TW101121579 A TW 101121579A TW 101121579 A TW101121579 A TW 101121579A TW 201312120 A TW201312120 A TW 201312120A
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Taiwan
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electrical contact
carbon film
contact member
film
contact
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TW101121579A
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Chinese (zh)
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TWI457570B (en
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Norihiro Jiko
Takayuki Hirano
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Kobe Steel Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06738—Geometry aspects related to tip portion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects

Abstract

Provided is an electrical contact member which is capable of maintaining stable conductivity over a long period of time, while achieving low adhesion to a test subject, in particular, an electrical contact member which is capable of maintaining stable electrical contact over a long period of time by suppressing increase in the contact resistance, while achieving low adhesion to a test subject even after repeated contact at high temperatures around 85 DEG C or after being left in the atmosphere for a long period of time. The present invention relates to an electrical contact member, which repeatedly comes into contact with a test subject, and wherein the surface of the electrical contact member, said surface coming into contact with the test subject, is configured of a carbon coating film that contains Pd.

Description

電性接點構件 Electrical contact member

本發明係有關為了檢查半導體元件之電性特性所使用，以前端部反覆接觸於電極等之被檢體之接觸探針等之電性接點構件，特別是有關在高溫的反覆檢查，或呈經由大氣中之長期間放置而導電性亦未產生劣化之對於耐久性優越之電性接點構件，及具備該電性接點構件之檢查用插座，探針卡，檢查單元等之檢查用連接裝置者。 The present invention relates to an electrical contact member for contacting a probe or the like of a subject whose electrode is repeatedly contacted with a tip end portion for use in inspecting electrical characteristics of a semiconductor element, and more particularly to a reverse inspection at a high temperature or An electrical contact member excellent in durability, which is not deteriorated in conductivity by being placed in the atmosphere for a long period of time, and an inspection socket including the electrical contact member, a probe card, an inspection unit, and the like Device.

積體電路(IC)，大規模積體電路(LSI)，發光二極體(LED)等之電子零件(即，使用半導體元件之電子零件)係使使用於檢查用連接裝置之電性接點構件(接觸端子)接觸於半導體元件之電極，檢查其電性特性。上述電性接點構件係當然為導電性良好之構成(接觸阻抗值為低者)，要求具備對於經由與被檢體之電極之反覆接觸，亦未產生摩耗或損傷之程度的耐久性者。 An electronic component such as an integrated circuit (IC), a large-scale integrated circuit (LSI), or a light-emitting diode (LED) (that is, an electronic component using a semiconductor element) is an electrical contact used for an inspection connection device. The member (contact terminal) is in contact with the electrode of the semiconductor element, and its electrical characteristics are examined. The electrical contact member is of course a structure having good electrical conductivity (the contact resistance value is low), and it is required to have a durability that is not excessively worn or damaged by repeated contact with the electrode of the subject.

上述電性接點構件之接觸阻抗值係一般而言係設定為100mΩ以下，但經由進行與被檢體之反覆檢查之時，有著從數100mΩ至數Ω惡化之情況。因此，從以往定期性地進行電性接點構件之清潔或交換，但此等係從顯著使檢查工程之信賴性與檢查用連接裝置之稼動率下降之情況，發展有即使經由長期的反覆使用，接觸阻抗值亦未下降之電性接點構件之開發。特別是電性接點構件係於被檢體之電 極形成有焊錫或鍍錫(Sn)等之情況，因焊錫或錫為柔軟之故，經由與電性接點構件之接觸而有削去電極表面，其削屑等有容易附著於電性接點構件之前端部之特性，且經由附著之焊錫或錫產生氧化之時，保持成安定接觸阻抗值之位準情況則為困難。 The contact resistance value of the electrical contact member is generally set to 100 mΩ or less, but may deteriorate from several hundred mΩ to several Ω when the inspection with the subject is repeated. Therefore, the cleaning or exchange of the electrical contact members is performed periodically, but these have been developed to reduce the reliability of the inspection project and the rate of inspection of the connection device for inspection, even after repeated use over a long period of time. The development of electrical contact members whose contact resistance values have not decreased. In particular, the electrical contact member is attached to the body of the object. Solder or tin plating (Sn) is formed on the pole. Since the solder or tin is soft, the electrode surface is scraped off by contact with the electrical contact member, and the shavings and the like are easily attached to the electrical connection. It is difficult to maintain the level of the stable contact resistance value when the characteristics of the front end portion of the member are oxidized by the attached solder or tin.

作為使電性接點構件之接觸阻抗值安定化之方法，例如可舉出專利文獻1~3。其中，對於專利文獻1係記載有在將碳或碳與氫做為主成分之非晶質的硬質皮膜中，作為碳，氫以外的不純物元素，經由以0.001~40原子%的範圍添加選自V、Cr、Zr、Nb、Hf、Ta、Au、Pt、Ag的群之至少一種元素而具備優越的耐磨耗性與高導電性，具備膜應力小，良好摺動特性之硬質皮膜，此硬質皮膜係可適當地適用於要求電性接觸之摺動部。 As a method of setting the contact resistance value of the electrical contact member, for example, Patent Documents 1 to 3 can be cited. In the case of the amorphous hard film containing carbon or carbon and hydrogen as a main component, the impurity element other than hydrogen is added in an amount of 0.001 to 40 atom% in a range of 0.001 to 40 atom%. At least one element of the group of V, Cr, Zr, Nb, Hf, Ta, Au, Pt, and Ag has excellent wear resistance and high conductivity, and has a hard film having a small film stress and good folding characteristics. The hard film system can be suitably applied to a hinge portion requiring electrical contact.

另外，對於專利文獻2係揭示有在鎢或錸鎢所成之探針中，於前端側之接觸部的至少前端部，形成以1~50質量%之範圍而含有鎢，鉬，金，銀，鎳，鈷，鉻，鈀，鍺，鐵，銦，錫，鉛，鋁，鉭，鈦，銅，錳，白金，鉍，鋅，鎘之中至少一種類之金屬之DLC膜之探針。如根據上述構成之探針，記載有即使與鋁電極反覆接觸，亦不易附著有鋁屑，即使未頻繁進行清潔作業，亦可降低接觸阻抗而安定化。 Further, Patent Document 2 discloses that in the probe formed of tungsten or tantalum tungsten, at least the tip end portion of the contact portion on the distal end side is formed to contain tungsten, molybdenum, gold, and silver in a range of 1 to 50% by mass. , a probe of a metal DLC film of at least one of nickel, cobalt, chromium, palladium, iridium, iron, indium, tin, lead, aluminum, lanthanum, titanium, copper, manganese, platinum, lanthanum, zinc, and cadmium. According to the probe having the above configuration, it is described that aluminum scrap is less likely to adhere even when it is in contact with the aluminum electrode, and the contact resistance can be stabilized even if the cleaning operation is not performed frequently.

另外，對於專利文獻3係揭示有作為離子注入之端子材料之至少表面則將鈹-銅合金，銅，銀，金，鎳，鈀，白金，鍺，錸，鉻，鉬，鎢之任一，或此等作為主成分之 材料所成之電性特性測定用端子(探針)。在上述專利文獻3中，為了使對於最表面之異物附著效果發揮，而由將在從該端子之最表面深度50nm以下之淺的範圍之平均碳濃度控制為約1~80at%者，即使與元件側電極(焊錫等)反覆接觸，亦不易附著有異物，可降低清潔頻率度。 Further, Patent Document 3 discloses that at least the surface of the terminal material for ion implantation is any one of a bismuth-copper alloy, copper, silver, gold, nickel, palladium, platinum, rhodium, ruthenium, chromium, molybdenum or tungsten. Or these as the main components Terminal (probe) for measuring electrical properties made of materials. In the above-described Patent Document 3, in order to control the foreign matter adhesion effect on the outermost surface, the average carbon concentration in the range from the shallow surface of the terminal having a depth of 50 nm or less is controlled to be about 1 to 80 at%, even if When the element side electrode (solder, etc.) is repeatedly contacted, foreign matter is less likely to adhere, and the cleaning frequency can be lowered.

[專利文獻] [Patent Literature]

[專利文獻1]日本特許第3336682號公報 [Patent Document 1] Japanese Patent No. 3336682

[專利文獻2]日本特開2001-289874號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2001-289874

[專利文獻3]日本特開2003-149267號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2003-149267

如根據上述方法，期待有提供可承受在室溫下之反覆檢查之電性接點構件，但電性接點構件之使用環境為不同，有在較室溫為苛酷的高溫下所使用之情況。例如，將電性接點構件使用於在約85℃程度之高溫下之反覆檢查時，加熱至高溫之Sn等之電極構件則與電性接點構件接觸之故，對於電性接點構件之Sn的附著率則大幅度提升，帶來電性接點構件之導電性亦顯著提升等深刻問題。但前述之專利文獻1~3的技術係並非從如此的觀點所檢討之構成，而如揭示於此等專利文獻，將遍佈廣範圍而含有廣範圍之添加元素的探針，在高溫下反覆接觸於Sn電極等時，擔心從電極削去之Sn則多量地附著於電性接點構件表面，經由附著之Sn的氧化而導電性下降，接觸阻抗上升 之情況，無法確保長期安定之電性接觸。 According to the above method, it is expected to provide an electrical contact member which can withstand repeated inspection at room temperature, but the use environment of the electrical contact member is different, and it is used at a relatively high temperature which is harsh at room temperature. . For example, when the electrical contact member is used for the reverse inspection at a high temperature of about 85 ° C, the electrode member such as Sn heated to a high temperature is in contact with the electrical contact member, and the electrical contact member is The adhesion rate of Sn is greatly improved, and the electrical conductivity of the electrical contact member is also significantly improved. However, the techniques of the above-mentioned Patent Documents 1 to 3 are not reviewed from such a viewpoint, and as disclosed in these patent documents, probes which are widely distributed and contain a wide range of additive elements are repeatedly contacted at a high temperature. In the case of a Sn electrode or the like, it is feared that Sn scraped off from the electrode adheres to the surface of the electrical contact member in a large amount, and conductivity is lowered by oxidation of the adhered Sn, and the contact resistance is increased. In this case, it is impossible to ensure long-term stable electrical contact.

另外，電性接點構件之一部分係未開封後馬上使用，而有在開封之狀態數週間程度放置於室內等之大氣中之情況。如此情況，金屬元素的氧化同時進行，而成為電性接點構件之導電性下降。另外，安裝於檢查裝置之電性接點構件亦經由於升溫/降溫處理或被檢體之交換之間金屬元素產生氧化之時，接觸阻抗則上升。 Further, one of the electrical contact members is used immediately after being unsealed, and may be placed in the atmosphere of the room or the like several weeks after the opening. In this case, the oxidation of the metal element proceeds simultaneously, and the electrical conductivity of the electrical contact member is lowered. Further, when the electrical contact member attached to the inspection device is oxidized by the metal element between the temperature rise/lower temperature treatment or the exchange of the object, the contact resistance increases.

本發明係有鑑於上述情事所作為之構成，其目的係提供可實現與被檢體(例如，焊錫，Sn，Al，Pd等)之低附著性同時，保持長期間安定之導電性(在本發明中係以接觸阻抗值而加以評估)之電性接點構件，特別是在約85℃程度之高溫的反覆接觸，或在大氣中加以長期間放置之後，亦實現與被檢體之低附著性同時，可抑制接觸阻抗的上升，保持長期間安定之電性接觸之電性接點構件，及具有此等之檢查用連接裝置。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a low-adhesion property with respect to a subject (for example, solder, Sn, Al, Pd, etc.) while maintaining conductivity for a long period of time (in this case) In the invention, the electrical contact member is evaluated by the contact resistance value, in particular, the reverse contact at a high temperature of about 85 ° C, or after being placed in the atmosphere for a long period of time, the low adhesion to the object is also achieved. At the same time, it is possible to suppress an increase in contact resistance, to maintain an electrical contact member that is electrically connected for a long period of time, and to have such an inspection connection device.

本發明係提供以下的電性接點構件及檢查用連接裝置。 The present invention provides the following electrical contact members and inspection connection devices.

(1)一種電性接點構件，係反覆接觸於被檢體之電性接點構件，其特徵為與前述被檢體接觸之前述電性接點構件的表面係由含有Pd之碳被膜加以構成者。 (1) An electrical contact member that is in contact with an electrical contact member of a subject, wherein a surface of the electrical contact member that is in contact with the object is made of a carbon film containing Pd. Constitute.

(2)如第(1)項所記載之電性接點構件，其中，含於前述碳被膜中的Pd之含有量係10~50原子%。 (2) The electrical contact member according to the item (1), wherein the content of Pd contained in the carbon film is 10 to 50 atom%.

(3)如第(2)項所記載之電性接點構件，其中，含於前述碳被膜中的Pd之含有量係10~23原子%。 (3) The electrical contact member according to the item (2), wherein the content of Pd contained in the carbon film is 10 to 23 atom%.

(4)如第(1)項所記載之電性接點構件，其中，前述碳被膜的膜厚係5nm~10μm。 The electrical contact member according to the item (1), wherein the film thickness of the carbon film is 5 nm to 10 μm.

(5)如第(2)項所記載之電性接點構件，其中，前述碳被膜的膜厚係5nm~10μm。 (5) The electrical contact member according to the item (2), wherein the film thickness of the carbon film is 5 nm to 10 μm.

(6)如第(3)項所記載之電性接點構件，其中，前述碳被膜的膜厚係5nm~10μm。 (6) The electrical contact member according to the item (3), wherein the film thickness of the carbon film is 5 nm to 10 μm.

(7)如第(1)項所記載之電性接點構件，其中，前述碳被膜的膜厚係5nm~10μm時，含於前述碳被膜中的Pd之含有量則為10~23原子%，前述碳被膜的膜厚係5nm~200nm時，含於前述碳被膜中的Pd之含有量則為10~50原子%。 (7) The electrical contact member according to the item (1), wherein the film thickness of the carbon film is 5 nm to 10 μm, and the content of Pd contained in the carbon film is 10 to 23 atom%. When the film thickness of the carbon film is 5 nm to 200 nm, the content of Pd contained in the carbon film is 10 to 50 atom%.

(8)如第(1)~(7)任一項所記載之電性接點構件，其中，所檢查之被檢體係含有Sn。 (8) The electrical contact member according to any one of (1) to (7) wherein the inspected system to be inspected contains Sn.

(9)一種檢查用連接裝置，其中，具有複數個(1)~(7)任一項所記載之電性接點構件。 (9) A connection device for inspection, comprising the plurality of electrical contact members according to any one of (1) to (7).

(10)一種檢查用連接裝置，其中，具有複數個第(8)項所記載之電性接點構件。 (10) An inspection connecting device comprising a plurality of electrical contact members described in the item (8).

本發明之電性接點構件係與被檢體接觸之電性接點構件的表面為含有Pd之碳被膜，理想為適當地控制碳被膜中的Pd量之故，特別是在約85℃程度之高溫的反覆接觸 ，或在大氣中加以長期間放置之後，亦實現與被檢體之低附著性同時，可抑制接觸阻抗的上升，保持長期間安定之電性接觸。 The surface of the electrical contact member in contact with the object of the present invention is a carbon film containing Pd, and it is desirable to appropriately control the amount of Pd in the carbon film, particularly at about 85 ° C. Repetitive contact at high temperatures After being placed in the atmosphere for a long period of time, the adhesion to the object is also achieved, and the increase in contact resistance can be suppressed, and the electrical contact for a long period of stability can be maintained.

本發明者們係在以往的電性接點構件關連技術中未充分加以作過檢討，而從提供在高溫試驗環境下，及大氣中之長期間放置之嚴酷狀況亦可使用之電性接點構件之觀點，進行檢討。其結果，電性接點構件之中，如使用與被檢體接觸之前端部之碳被膜呈含有Pd地加以構成之電性接點構件，發現達成所期待之目的，完成本發明。 The present inventors have not sufficiently reviewed the related electrical contact member connection technology, and can provide an electrical contact from a severe condition in which a high temperature test environment and a long period of time in the atmosphere are provided. Review the views of the components. As a result, among the electrical contact members, an electrical contact member having a Pd-containing carbon film at the end portion before the contact with the object is used, and it has been found that the desired object has been achieved.

如前述之專利文獻所揭示地，至此知道有於構成電性接點構件之碳被膜，配置以Pd為始之多數的金屬情況，其中，並不知道Pd特別可承受在上述之嚴苛狀況下之使用的金屬，經由本發明者們首次發現之見解。 As disclosed in the above-mentioned patent documents, it is known that the carbon film constituting the electrical contact member is disposed in the case of a metal having a majority of Pd, and it is not known that Pd is particularly resistant to the above-mentioned severe conditions. The metal used was first discovered by the inventors.

在本說明書中，「高溫反覆檢查後亦抑制接觸阻抗之上升」係指如後述之實施例所記載，意味在85℃中10萬次，與Sn電極接觸後之接觸阻抗值的平均為不足300mΩ之情況。 In the present specification, "the increase in contact resistance is also suppressed after the high temperature reverse inspection" means that it is 100,000 times at 85 ° C, and the average contact resistance value after contact with the Sn electrode is less than 300 mΩ as described in the examples below. The situation.

另外，在本說明書中，「在室溫長期間放置後亦抑制接觸阻抗之上升」係指如後述之實施例所記載，意味在製作電性接點構件後，在室內(溫度：23℃，濕度50%的大氣中)放置2週之後的接觸阻抗值之上升，則比較於放置之後，抑制為不足300mΩ之情況。 In addition, in the present specification, "the increase in contact resistance is also suppressed after standing for a long period of time at room temperature" means that it is described in the examples to be described later, and it means that after making an electrical contact member, it is indoors (temperature: 23 ° C, In the atmosphere with a humidity of 50%, the increase in the contact resistance value after leaving for 2 weeks is suppressed to less than 300 mΩ after the placement.

以下，對於本發明之電性接點構件，參照圖1之同時加以詳細說明。圖1係顯示在本發明理想所使用之電性接點構件的與被檢體接觸之前端部分之一例的圖，模式性顯示後記之實施例的構成者。但本發明之構成係不限於圖1。例如，對於圖1係顯示作為中間層，從基材側依序，於含有不同的金屬(在圖1中係Ni，接著Cr)之金屬密著層上，形成含有來自下層之金屬密著層之Cr，和來自碳被膜層之C及Pd之混合層之構成，本發明係並不限定於此構成之內容，另外，金屬密著層或混合層之組合亦絕非限定於圖1所記載之元素的內容。 Hereinafter, the electrical contact member of the present invention will be described in detail with reference to Fig. 1 . Fig. 1 is a view showing an example of an end portion of an electrical contact member which is preferably used in the present invention before being in contact with a subject, and schematically shows a constitution of an embodiment to be described later. However, the constitution of the present invention is not limited to FIG. For example, FIG. 1 shows that as an intermediate layer, a metal adhesion layer containing a lower metal layer is formed on the metal adhesion layer containing different metals (Ni in FIG. 1 and then Cr) from the substrate side. The composition of the Cr and the mixed layer of C and Pd from the carbon coating layer is not limited to the constitution of the present invention, and the combination of the metal adhesion layer or the mixed layer is not limited to the one shown in FIG. The content of the element.

一般而言，電性接點構件之中，與被檢體接觸之電性接點構件之前端部分(通常，稱作柱塞的部分)係從被檢體側依序，大致分為與被檢體直接接觸之碳被膜，和基材。對於基材與碳被膜之間係為了提升兩者的密著性，如圖1所示，形成有中間層亦可。另外，對於基材上係如圖1所示，形成有鍍層亦可。 In general, among the electrical contact members, the front end portion (usually referred to as a plunger portion) of the electrical contact member that is in contact with the subject is roughly divided into the same from the subject side. The sample is in direct contact with the carbon film, and the substrate. In order to improve the adhesion between the substrate and the carbon film, as shown in Fig. 1, an intermediate layer may be formed. Further, as shown in FIG. 1 on the substrate, a plating layer may be formed.

並且，本發明之電性接點構件係有碳被膜含有Pd之特徵。 Further, the electrical contact member of the present invention is characterized in that the carbon film contains Pd.

如前述，Pd係在高溫之反覆檢查後，更且於大氣中長期間放置後，均與被檢體之附著性為低，作為可實現接觸阻抗之降低化的金屬，從多數的金屬之中加以選擇之構成。即使使用Pd以外之金屬而亦無法得到所期望之效果之情況，係如在後述之實施例得到實證。Pd係不僅對於含於被檢體之金屬(例如Sn等)之附著防止作用優越，亦 具有抑制經由含於構成電性接點構件之碳被膜中之不可避的不純物(在製造過程等不可避的會混入之構成，例如Fe，V，Al，Ga等)之氧化的接觸阻抗之上升作用之故，考慮有效發揮上述作用之構成。Pd係在碳被膜中係並非碳化物而作為非晶質構造之金屬而存在。 As described above, Pd is low in adhesion to the test object after being repeatedly examined at a high temperature, and is placed in the atmosphere for a long period of time. As a metal which can reduce the contact resistance, it is among a large number of metals. Make a choice. Even if a metal other than Pd is used, the desired effect cannot be obtained, as evidenced by the examples described later. The Pd system not only has an excellent adhesion prevention effect on a metal (for example, Sn, etc.) contained in the object, but also It has an effect of suppressing the increase in the contact resistance of the oxidized impurities (such as Fe, V, Al, Ga, etc. which are inevitably mixed in a manufacturing process, etc.) which are inevitable in the carbon film constituting the electrical contact member. Therefore, consider the constitution that effectively performs the above functions. Pd is present as a metal of an amorphous structure in a carbon film which is not a carbide.

在多數的金屬之中，特別是Pd對於上述特性優越之詳細理由為不明。例如，使用與Pd相同之貴金屬元素的Ru情況，如後述之實施例所示，雖可降低室溫放置後之接觸阻抗，但於在高溫之反覆檢查後，Sn則附著於表面，而接觸阻抗則顯著上升(參照表1之No.13及表2之No.10)。貴金屬元素係具有不易氧化之特性之故，本來，不論認為Ru亦可得到與Pd同樣的結果，而得到如此之實驗結果係對於本發明者們而言為意外的情況。Ru係經由某些理由，思量有在高溫之耐Sn附著性下降。另外，如僅考慮經由氧化之接觸阻抗的降低，亦考慮添加例如Au或Ag，但Au及Ag係在碳被膜中凝結而碳被膜之機械強度則大幅下降之故而並非有用。 Among the many metals, in particular, the detailed reasons why Pd is superior to the above characteristics are unknown. For example, in the case of Ru using a noble metal element similar to Pd, as shown in the later-described embodiment, although the contact resistance after leaving at room temperature can be lowered, Sn is attached to the surface after repeated inspection at a high temperature, and the contact resistance Then it rises remarkably (refer to No. 13 of Table 1 and No. 10 of Table 2). Since the precious metal element has a property of being difficult to oxidize, the same result as Pd can be obtained regardless of Ru, and the result of such an experiment is unexpected for the present inventors. For some reasons, Ru has thought that there is a decrease in Sn adhesion resistance at high temperatures. Further, in consideration of only a decrease in contact resistance via oxidation, it is also considered to add, for example, Au or Ag, but Au and Ag are not useful in the case where the carbon film is condensed in the carbon film and the mechanical strength of the carbon film is largely lowered.

含於碳被膜中之Pd的量係為10~50原子%之範圍為佳，而10~23原子%之範圍為更佳，由此，成為有效發揮上述特性(參考後述之實施例)。對於前述之專利文獻係揭示有於碳被膜中，遍佈廣範圍之含有量而含有多數的金屬之電性接點構件，但對於為了確實地發揮所期望之特性，係了解到在特定之窄範圍內含有Pd者為有效。更且，碳被膜中之Pd量係了解到可對應於碳被膜之膜厚而設定， 更詳細而言，對於膜厚為薄之情況係可將Pd量容許至更高濃度者。然而，碳被膜之膜厚及碳被膜中的Pd量係經由電性接點構件之部位而有多少不同之情況。此係認為因電性接點構件之形狀，成膜方法，成膜條件等引起。在本發明之碳被膜的膜厚及碳被膜中之Pd量係均意味於電性接點構件之軸線，在垂直的面(例如，電性接點構件之銳利的前端部等)的值。 The amount of Pd contained in the carbon film is preferably in the range of 10 to 50 atom%, and more preferably in the range of 10 to 23 atom%, whereby the above characteristics are effectively exhibited (refer to Examples described later). The above-mentioned patent document discloses an electrical contact member which is contained in a carbon film and which contains a large amount of metal and contains a large amount of metal. However, in order to surely exhibit desired characteristics, it is known that a narrow range is known. Those containing Pd are effective. Furthermore, the amount of Pd in the carbon film is known to be set corresponding to the film thickness of the carbon film. More specifically, in the case where the film thickness is thin, the amount of Pd can be allowed to be higher to a higher concentration. However, the film thickness of the carbon film and the amount of Pd in the carbon film are different depending on the location of the electrical contact member. This is considered to be caused by the shape of the electrical contact member, the film formation method, the film formation conditions, and the like. The film thickness of the carbon film of the present invention and the amount of Pd in the carbon film mean the values of the axis of the electrical contact member, the vertical surface (for example, the sharp front end portion of the electrical contact member, etc.).

詳細而言，碳被膜中之理想的Pd量之下限為10原子%以上。在Pd量不足10原子%中，未有效地發揮經由Pd添加之接觸阻抗降低化作用，而上述試驗後之接觸阻抗則顯著增加。此係對於碳被膜內係除Pd以外，含有在製造過程等不可避免混入之不純物元素之故，推測因此不純物元素產生氧化。另外，在Pd量不足10原子%中，特別是高溫試驗後之電性接點構件表面之Sn附著量則增加。 Specifically, the lower limit of the desired amount of Pd in the carbon film is 10 atom% or more. When the amount of Pd is less than 10 atom%, the contact resistance reduction by Pd addition is not effectively exhibited, and the contact resistance after the above test is remarkably increased. In addition to the Pd in the carbon film, the impurities are inevitably mixed in the manufacturing process, and it is presumed that the impurity element is oxidized. Further, in the case where the amount of Pd is less than 10 atom%, the amount of Sn adhesion on the surface of the electrical contact member after the high-temperature test is particularly increased.

另一方面，碳被膜中之理想的Pd量之上限係作為23原子%以下。經由Pd之接觸阻抗之降低化作用係碳被膜中之Pd量越多，有著提升的傾向，但對於降低為作為所期望之接觸阻抗值位準係Pd量如為20原子%而為充分，另外，Pd係高價的金屬之故，過渡添加係並不經濟。更且，Pd量當超過23原子%時，在高溫試驗之被檢體之低附著性則下降，Sn附著量則增加。 On the other hand, the upper limit of the ideal amount of Pd in the carbon film is 23 atom% or less. The decrease in the contact resistance via Pd is a tendency to increase as the amount of Pd in the carbon film increases, but it is sufficient to reduce the amount of Pd as a desired contact resistance value as 20 atom%. Pd is a high-priced metal, and the transitional addition is not economical. Further, when the amount of Pd exceeds 23 atom%, the low adhesion property of the sample at the high temperature test decreases, and the amount of Sn adhesion increases.

更且，碳被膜中之Pd量之上限係有可容許至50原子%之情況。特別是對於碳被膜之膜厚為5~200nm之情況，可將Pd量作為10~50原子%，對於如此之情況亦可抑 制Sn的附著。至發現如此構成的原委係如以下。 Further, the upper limit of the amount of Pd in the carbon film is allowed to be 50 atom%. In particular, when the film thickness of the carbon film is 5 to 200 nm, the amount of Pd can be made 10 to 50 atom%, which is also true for such a case. The attachment of Sn is made. The discovery of the constitution as such is as follows.

以往，電性接點構件之Sn附著係在垂直於電性接點構件之軸線的面加以評估。但特別是被檢體之對方電極材料為Sn合金的情況，於接觸時，Sn合金則產生變形，對於從探針前端持續傾斜之斜面亦附著有Sn合金。本發明者們進行檢討之結果，對於Sn附著為多的情況，了解到較垂直於電性接點構件之軸線的面，反而從傾斜面(例如從軸線傾斜40~50°程度之斜面)開始有附著，緩緩地被覆電性接點構件全體而接觸阻抗成為不安定。因此，在本發明中，從如控制在前述傾斜面之Sn附著即可之觀點，檢討影響於在傾斜面之Sn附著之因子。 In the past, the Sn adhesion of an electrical contact member was evaluated on a surface perpendicular to the axis of the electrical contact member. However, in particular, in the case where the electrode material of the object is a Sn alloy, the Sn alloy is deformed at the time of contact, and a Sn alloy is also adhered to the slope which is continuously inclined from the tip end of the probe. As a result of the review by the present inventors, in the case where Sn is excessively attached, it is known that the surface is perpendicular to the axis of the electrical contact member, and instead starts from the inclined surface (for example, a slope inclined by about 40 to 50 degrees from the axis). There is adhesion, and the entire electrical contact member is gradually covered, and the contact resistance becomes unstable. Therefore, in the present invention, the factor affecting the adhesion of Sn on the inclined surface is examined from the viewpoint of controlling the attachment of Sn to the inclined surface.

其結果，發現對於前述傾斜面之表面粗度與Sn附著有著相關關係，更且，了解到傾斜面之表面粗度係對於碳被膜之膜厚與碳被膜中之Pd含有量受到影響。如在後述之實施例3所詳述，在傾斜面之算術平均粗度Ra大約為3nm以下之情況，可有效地發揮Sn附著抑制效果，為此，了解到如將(換算為在垂直於電性接點構件之軸線的面的值)碳被膜之膜厚作為5~200nm，且將含於碳被膜中之Pd含有量作為10~50原子%即可。 As a result, it was found that the surface roughness of the inclined surface was correlated with the Sn adhesion, and it was found that the surface roughness of the inclined surface affected the film thickness of the carbon film and the Pd content in the carbon film. As described in detail in the third embodiment to be described later, when the arithmetic mean roughness Ra of the inclined surface is approximately 3 nm or less, the Sn adhesion suppressing effect can be effectively exhibited, and for this reason, it is understood that (converted to be perpendicular to electricity) The value of the surface of the axis of the contact member may be 5 to 200 nm, and the content of Pd contained in the carbon film may be 10 to 50% by atom.

從以上的觀點，在本發明中，將碳被膜中的理想Pd量訂定為10~50原子%，而更理想訂定為10~23原子%。又理想之Pd量係11原子%以上，22原子%以下，而更理想之Pd量係12原子%以上，21原子%以下。碳被膜之組成係可經由EPMA或歐傑光譜分析法而測定。另外，對 於金屬元素之濃度與電性阻抗係有良好相關關係之故，如預先由EPMA等之方法求得此關係，可簡易地以電性阻抗決定濃度。 From the above viewpoints, in the present invention, the amount of the ideal Pd in the carbon film is set to 10 to 50 atom%, and more desirably 10 to 23 atom%. Further, the amount of Pd is preferably 11 atom% or more and 22 atom% or less, and more preferably, the amount of Pd is 12 atom% or more and 21 atom% or less. The composition of the carbon film can be determined by EPMA or Ou Jie spectral analysis. In addition, right Since the concentration of the metal element is in good correlation with the electrical impedance system, if the relationship is obtained by a method such as EPMA in advance, the concentration can be easily determined by electrical impedance.

含有特定量之Pd於上述碳被膜中之構成係包含於本發明之範圍內。因而，碳被膜中之Pd的分布形態係無特別加以限定，例如於碳被膜中，在均一地分散Pd之狀態而存在亦可，或者在使濺鍍條件作變化等，而碳被膜中之Pd濃度產生變化之狀態而存在亦可。 The constitution containing a specific amount of Pd in the above carbon film is included in the scope of the present invention. Therefore, the distribution form of Pd in the carbon film is not particularly limited. For example, in the carbon film, the Pd may be uniformly dispersed, or the sputtering conditions may be changed, and the Pd in the carbon film may be used. It is also possible that the concentration changes state.

為了確實實現與被檢體之低附著性，及接觸阻抗之降低化，碳被膜係具有特定厚度為佳，大約為5nm以上，10nm以下為佳。經由上述碳被膜之形成，成為碳被膜本身則不易被氧化而有效抑制從電性接點構件表面至碳被膜內部之氧的侵入同時，亦抑制對於位於碳被膜下之中間層(例如，圖1所示之混合層或金屬密著層)之氧的侵入。 In order to reliably achieve low adhesion to the subject and reduce the contact resistance, the carbon film has a specific thickness of preferably 5 nm or more and 10 nm or less. By the formation of the carbon film, the carbon film itself is less likely to be oxidized, and the intrusion of oxygen from the surface of the electrical contact member to the inside of the carbon film is effectively suppressed, and the intermediate layer located under the carbon film is also suppressed (for example, FIG. 1 Intrusion of oxygen in the mixed layer or metal clad layer shown.

詳細而言，本發明者們，進行上述之高溫試驗等而調查電性接點構件之接觸阻抗之經時變化結果，碳被膜之理想膜厚如為5nm以上，了解到可降低接觸至所期望位準之阻抗。碳被膜之下限係又理想為7mm以上，更理想為10nm以上。然而，碳被膜之膜厚越厚，耐久性係越提升，但過厚時，碳被膜之表面粗度增大之外，還有為了內部應力而碳被膜產生剝離，以及電性接點構件之接觸阻抗變高等之問題之故，碳被膜之理想上限係作為10μm。又理想之Pd含有層之上限為5μm以下，更理想為2μm以下(又理想為600nm以下，更理想為400nm以下)。 Specifically, the inventors of the present invention investigated the time-dependent change in the contact resistance of the electrical contact member by performing the above-described high-temperature test or the like, and the desired film thickness of the carbon film was 5 nm or more, and it was found that the contact can be lowered to the desired level. The impedance of the level. The lower limit of the carbon film is preferably 7 mm or more, more preferably 10 nm or more. However, the thicker the film thickness of the carbon film, the more the durability is improved, but when the thickness is too thick, the surface roughness of the carbon film is increased, and the carbon film is peeled off for internal stress, and the electrical contact member is The problem that the contact resistance becomes high is such that the ideal upper limit of the carbon film is 10 μm. Further, the upper limit of the Pd-containing layer is preferably 5 μm or less, more preferably 2 μm or less (more preferably 600 nm or less, still more preferably 400 nm or less).

在本發明中，碳被膜之膜厚為5nm~10μm(理想為5~600nm，更理想為5~400nm)，且碳被膜中之Pd量為10~23原子%為佳，但在本發明中，對應於碳被膜之膜厚，可設定含於碳被膜中之Pd含有量，在上述膜厚之中亦特別對於5~200nm之情況，Pd量之上限係可容許至50原子%(即，Pd量係10~50原子%，Pd量係理想為15~40原子%，又理想為20~35原子%)。 In the present invention, the film thickness of the carbon film is 5 nm to 10 μm (preferably 5 to 600 nm, more preferably 5 to 400 nm), and the amount of Pd in the carbon film is preferably 10 to 23 atom%, but in the present invention The amount of Pd contained in the carbon film can be set in accordance with the film thickness of the carbon film. In the case of the film thickness, especially for 5 to 200 nm, the upper limit of the amount of Pd can be allowed to 50 atom% (ie, The amount of Pd is 10 to 50 atom%, and the amount of Pd is desirably 15 to 40 atom%, and ideally 20 to 35 atom%.

本發明之特徵部分係與被檢體接觸之電性接點構件之表面(碳被膜)則呈含有Pd地構成者，除此之外的構成係並無特別加以限定，而可適宜選擇在電性接點構件之技術領域中通常所使用之構成而採用。 In the characteristic part of the present invention, the surface (carbon film) of the electrical contact member that is in contact with the object is composed of Pd, and the other components are not particularly limited, and may be appropriately selected. A configuration commonly used in the technical field of a sexual contact member is employed.

例如，在本發明之碳被膜係如由類鑽碳(DLC)膜等所代表地，高硬度，且對於耐磨耗性及摺動性優越，遍佈碳被膜之全面為非晶質之構成為佳。如此之碳被膜係即使反覆與對象材之接觸亦未消耗，亦未有附著有對象材，且因經由為非晶質之情況而使表面之凹凸增加的可能性亦為小之故。 For example, the carbon film of the present invention is represented by a diamond-like carbon (DLC) film or the like, has high hardness, and is excellent in abrasion resistance and detachment property, and is completely amorphous throughout the carbon film. good. Such a carbon film is not consumed even if it is repeatedly brought into contact with the target material, and the target material is not adhered thereto, and the possibility that the unevenness of the surface is increased by being amorphous is also small.

對於上述碳被膜係在不波及不良影響於本發明之作用的限度，亦可含有Pd以外之金屬或其碳化物。即，對於碳被膜係僅含有Pd亦可，而作為Pd以外的金屬，至少含有一種以上例如W、Ta、Mo、Nb、Ti、Cr等亦可。 The carbon film may contain a metal other than Pd or a carbide thereof, to the extent that the adverse effect of the present invention is not affected. In other words, the carbon film may contain only Pd, and the metal other than Pd may contain at least one of, for example, W, Ta, Mo, Nb, Ti, Cr, or the like.

另外，可含於碳被膜中，Pd以外之金屬的含有量係當考慮於檢查時所要求之接觸阻抗值等時，控制為10原子%程度以下為佳，而又理想為5原子%程度以下。Pd以 外之金屬的含有量過多時，因經由該金屬的氧化而接觸阻抗則上升，另外，在高溫下之檢查之耐Sn附著性則下降之故。 In addition, it is preferable that it is contained in the carbon film, and the content of the metal other than Pd is preferably 10 atom% or less, and preferably 5 atom% or less, in consideration of the contact resistance value or the like required for inspection. . Pd to When the content of the metal outside is too large, the contact resistance increases due to oxidation of the metal, and the Sn adhesion resistance at the time of inspection at a high temperature is lowered.

具有如此層構成之碳被膜(更且，後述之中間層)係可由化學氣相蒸鍍法(CVD法)，濺鍍法及電弧離子蒸鍍法(AIP法)等各種成膜方法而形成，但從容易形成電性阻抗低之碳被膜之情況，或容易導入金屬元素於碳被膜之情況，適用濺鍍法或AIP法為佳。特別是濺鍍法係從形成良質之碳被膜之情況，最為理想。即，在碳被膜原本的性質中係有金剛石構造或石墨構造，為了得到充分的硬度與低電性傳導係兩者中間構造之非晶形構造為佳，但如此之構造係以濺鍍法最為容易得到，另外，阻礙電性傳導之氫的混入亦幾乎未產生。 The carbon film (and the intermediate layer described later) having such a layer structure can be formed by various film forming methods such as a chemical vapor deposition method (CVD method), a sputtering method, and an arc ion deposition method (AIP method). However, in the case where it is easy to form a carbon film having a low electrical impedance, or when a metal element is easily introduced into the carbon film, a sputtering method or an AIP method is preferably used. In particular, the sputtering method is most preferable from the case of forming a favorable carbon film. That is, in the original properties of the carbon film, there is a diamond structure or a graphite structure, and it is preferable to obtain an amorphous structure in which a sufficient hardness and a low-electricity conduction structure are intermediate, but such a structure is most easily sputtered. As a result, in addition, the incorporation of hydrogen which inhibits electrical conduction is hardly generated.

另外，配置於上述碳被膜下之基材係考慮強度或導電性，最佳使用鈹銅(Be-Cu)；鈀(Pd)，鎢(W)，銦(Ir)或此等之合金；碳工具鋼等。另外，因應必要，於上述基材上(碳被膜與基材之間)施以Au系等之鍍層亦可。 Further, the base material disposed under the carbon film is preferably made of beryllium copper (Be-Cu); palladium (Pd), tungsten (W), indium (Ir) or the like; carbon; Tool steel, etc. Further, if necessary, a plating layer of Au type or the like may be applied to the substrate (between the carbon film and the substrate).

另外，對於上述基材或其上方的鍍層(以下，稱作「基材等」)，和碳被膜之間係形成有為了提升密著性之中間層為佳。基材等與碳被膜係原本密著性不佳的構成，另外碳被膜係因與構成基材等之金屬的熱膨脹率的差引起，而於成膜時殘存有壓縮應力之故，容易在與基材等之界面產生剝離。作為如此之中間層係可使用公知的構成，例如，可參照記載於日本特開2002-318247號公報之中間層等 者。具體而言係作為中間層，例如，可舉出與基材密著性良好之金屬(例如Ni等)或至少具有一層以上其合金所成之金屬密著層之構成；於上述金屬密著層上，形成含有前述金屬密著層之金屬(例如Ni等)，和含於上述碳被膜之金屬元素(例如Pd等)，和碳之混合層的構成等。此混合層係為伴隨從基材側成為碳被膜側，上述混合層中之碳含有量則持續增加之傾斜層亦可。使用於前述金屬密著層之金屬係如經由基材等之種類而選擇適當的構成即可，但基材等(特別是鍍層)為Au系之情況係使用Ni為佳，經由如此因應基材等而設置適當的中間層之時，可實現優越之耐久性。例如，在後述之實施例中，如圖1所示，於金屬密著層(Cr)上形成混合層(Cr+C+Pd)，且該混合層中之元素的濃度呈階段性地變化地調整，但經由如此之混合層之形成，混合層中的應力亦階段性地產生變化，可有效地防止從基材剝離有混合層之情況者。另外，於混合層中含有Cr或Pd之故，混合層之導電性亦提升。 Further, it is preferable that the substrate or the plating layer thereon (hereinafter referred to as "base material or the like") and the carbon film are formed with an intermediate layer for improving adhesion. The base material or the like has a poor adhesion to the carbon film, and the carbon film is caused by a difference in thermal expansion coefficient between the metal such as the base material, and the like, and the compressive stress remains at the time of film formation. Peeling occurs at the interface of the substrate or the like. A known structure can be used as the intermediate layer. For example, the intermediate layer of JP-A-2002-318247 can be referred to. By. Specifically, the intermediate layer is, for example, a metal having a good adhesion to a substrate (for example, Ni) or a metal adhesion layer having at least one layer of an alloy thereof; and the metal adhesion layer; In the above, a metal (for example, Ni or the like) containing the metal adhesion layer, a metal element (for example, Pd or the like) contained in the carbon film, and a mixed layer of carbon are formed. The mixed layer may be an inclined layer in which the carbon content in the mixed layer is continuously increased as the carbon film side is formed from the substrate side. The metal used in the metal adhesion layer may be selected according to the type of the substrate or the like. However, when the substrate or the like (especially the plating layer) is of the Au type, it is preferable to use Ni, and the substrate is thus required. When the appropriate intermediate layer is set, superior durability can be achieved. For example, in the embodiment described later, as shown in FIG. 1, a mixed layer (Cr+C+Pd) is formed on the metal adhesion layer (Cr), and the concentration of the elements in the mixed layer is changed stepwise. Adjustment, but by the formation of such a mixed layer, the stress in the mixed layer is also changed stepwise, and it is possible to effectively prevent the case where the mixed layer is peeled off from the substrate. Further, since Cr or Pd is contained in the mixed layer, the conductivity of the mixed layer is also improved.

本發明之電性接點構件係作為其代表的形態而可舉出接觸探針銷，但除此之外，例如亦含有平板彈簧形態之構成或其他形態之構成者。即，在此等形態之構成，亦有存在有相當於角的處所情況(例如，平板彈簧的角部，半球狀之突起等)，因有著產生有如上述剪斷力之情況之故。 The electrical contact member of the present invention may be a contact probe pin as a representative form thereof, but may include, for example, a configuration of a flat spring or a configuration of another form. In other words, in the configuration of these forms, there are cases where the angle corresponds to a corner (for example, a corner portion of a flat spring, a hemispherical projection, or the like), and the shearing force is generated as described above.

另外，在如上述之接觸探針銷中，接觸部分(與被檢體接觸之部分)之形狀係亦知道有各種之構成，例如，有著作為2分割，3分割，4分割之構成(或未分割之構成)等 ，但本發明之電性接點構件係均含有其任一之構成。 Further, in the contact probe pin as described above, the shape of the contact portion (the portion in contact with the subject) is also known to have various configurations, for example, the composition is divided into 2 divisions, 3 divisions, and 4 divisions (or Undivided composition) However, the electrical contact members of the present invention each have any of its constitutions.

經由本發明之電性接點構件所檢查之被檢體(電極)係通常使用焊錫，此係基本上含有Sn之構成，此Sn係特別容易附著於接觸探針銷之構成。隨之，被檢體由Sn或Sn合金所成之情況，當適用在本發明之電性接點構件時，特別有效地發揮其效果。 In the object (electrode) to be inspected by the electrical contact member of the present invention, solder is generally used, and this structure basically contains Sn, and this Sn is particularly likely to adhere to the structure of the contact probe pin. Accordingly, when the object is made of Sn or a Sn alloy, the effect is particularly effectively exerted when applied to the electrical contact member of the present invention.

對於本發明係亦包含具有複數個上述電性接點構件之檢查用連接裝置。對於電性接點構件之個數並無特別加以限制，可經由被檢體之種類或形狀作適宜設定。 The invention also includes an inspection connection device having a plurality of the above-described electrical contact members. The number of the electrical contact members is not particularly limited, and can be appropriately set depending on the type or shape of the subject.

以下，舉出實施例而更具體地說明本發明，但本發明係未經由以下的實施例而被限制，亦在可符合上、下述之內容範圍，可加上適宜變更而實施，此等均包含於本發明之技術範圍。 Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited by the following examples, and may be implemented in accordance with the scope of the following and the following. All are included in the technical scope of the present invention.

[實施例] [Examples] 實施例1 Example 1

在本實施例中，為了調查Pd之有用性(在室溫之長期間放置後的接觸阻抗之降低化作用)，製作具備含有表1所示之各種金屬元素之碳被膜的電性接點構件。 In the present embodiment, in order to investigate the usefulness of Pd (the reduction of the contact resistance after standing for a long period of time at room temperature), an electrical contact member having a carbon film containing various metal elements shown in Table 1 was produced. .

具體而言，在本實施例中，作為接觸探針，使用前端部作為4分割之彈簧內藏探針。此接觸探針(日本yokowo股份有限公司製，YPW-6XT03-047)係於Be-Cu基材之最表面以Au-Co合金加以鍍層之構成。 Specifically, in the present embodiment, as the contact probe, the tip end portion is used as a four-part spring-incorporated probe. This contact probe (YPW-6XT03-047, manufactured by Japan yokowo Co., Ltd.) was formed by plating a layer of Au-Co alloy on the outermost surface of the Be-Cu substrate.

接著，如以下作為，經由濺鍍法，依序將為了提高與 基材之密著性之中間層，及碳被膜加以成膜。 Then, as follows, by sputtering, in order to improve The intermediate layer of the adhesion of the substrate and the carbon film are formed into a film.

具體而言，首先，於上述Au系鍍層上，使用DC磁控管濺鍍裝置，依序將Ni作50nm，及將Cr作50nm加以成膜。詳細濺鍍條件係如以下。 Specifically, first, on the Au-based plating layer, a DC magnetron sputtering apparatus was used, and Ni was sequentially formed into 50 nm, and Cr was formed into 50 nm. The detailed sputtering conditions are as follows.

到達真空度：6.7×10-4Pa The degree of vacuum reached: 6.7 × 10 -4 Pa

標靶：Ni標靶，及Cr標靶 Target: Ni target, and Cr target

標靶尺寸： 6inch Target size: 6inch

Ar氣壓：0.13Pa Ar pressure: 0.13Pa

濺鍍電力：500W Sputtering power: 500W

基材偏壓：0V Substrate bias: 0V

接著，於上述Cr膜上，將Cr，和含有之後所形成之碳被膜中的添加元素(元素種類係如表1所示)之碳的混合層，加以成膜100nm。具體而言，在混合層中，將Cr及含有添加元素之碳的比率，經由各以114W→34W，59W→935W的範圍調整投入至各標靶(於Cr標靶，及碳標靶，載置晶片於添加元素之複合標靶)之電力之時，在各膜厚20nm以5階段使其變化。經由如此於金屬密著層(Cr)與碳被膜之間設置階段性濃度產生變化之混合層之時，膜中的應力亦階段性產生變化，可有效防止來自基材的膜之剝離者。 Next, on the Cr film, a mixed layer of Cr and a carbon containing an additive element (the element type is shown in Table 1) in the carbon film formed later was formed into a film of 100 nm. Specifically, in the mixed layer, the ratio of Cr and the carbon containing the additive element is adjusted to the respective targets (in the Cr target, and the carbon target) by adjusting the range of 114 W → 34 W, 59 W → 935 W. When the power of the wafer was added to the composite target of the element, the film thickness was changed in five steps at 20 nm. When the mixed layer in which the stepwise concentration changes between the metal adhesion layer (Cr) and the carbon film is provided as described above, the stress in the film is also changed stepwise, and the peeling of the film from the substrate can be effectively prevented.

之後，將含有表1記載之添加元素之碳被膜加以成膜為400nm。詳細之濺鍍條件係如以下。 Thereafter, a carbon film containing the additive element described in Table 1 was formed into a film of 400 nm. The detailed sputtering conditions are as follows.

標靶：於碳標靶，載置晶片於添加元素之複合標靶 Target: a carbon target, a composite target on which a wafer is placed on an additive element

Ar氣壓：0.13Pa Ar pressure: 0.13Pa

濺鍍電力：1000W Sputtering power: 1000W

基材偏壓：-40V Substrate bias: -40V

標靶尺寸： 6inch Target size: 6inch

將具有如上述作為所得到之碳被膜的接觸探針，放置於室內(溫度：23℃，濕度：50%之大氣中)，經時性地測定對於無鉛焊錫(Sn-3原子%Ag-0.5原子%Cu)所成之電極而言的接觸阻抗值(製作後馬上，及放置2週後)。接觸阻抗值之測定係連接2條線於無鉛焊錫電極，另外於接觸於接觸探針相反側之Au電極亦連接2條線，於各1條施加電流，測定剩餘各一條間之電壓，經由所謂克耳文連接，測定接觸探針本身+與上下電極之接觸阻抗+上下電極之內部阻抗，除此之外的阻抗成分係經由可取消之方法而進行測定。 The contact probe having the carbon film obtained as described above was placed in a room (temperature: 23 ° C, humidity: 50% atmosphere), and time-dependently measured for lead-free solder (Sn-3 atom% Ag-0.5) The contact resistance value of the electrode formed by atomic % Cu) (immediately after production, and after 2 weeks of placement). The measurement of the contact resistance value is to connect two wires to the lead-free solder electrode, and the two electrodes connected to the opposite side of the contact probe are also connected to two wires, and a current is applied to each of the two electrodes to measure the voltage between the remaining ones. The Kelvin connection is used to measure the contact resistance of the contact probe itself + the upper and lower electrodes + the internal impedance of the upper and lower electrodes, and the other impedance components are measured by a cancelable method.

如此作為，測定放置後馬上及放置2週後之接觸阻抗值(探針本身之阻抗+接觸阻抗+電極之內部阻抗)。反覆5次(n=5)同樣的操作，算出其平均值時，比較於放置後馬上，放置2週後之接觸阻抗的上升不足300mΩ之構成作為○，300mΩ以上之構成作為×。 In this way, the contact resistance value (impedance of the probe itself + contact resistance + internal impedance of the electrode) immediately after placement and after 2 weeks of standing was measured. When the average value was calculated five times (n=5), the average value of the contact resistance was less than 300 mΩ after being placed for two weeks, and the composition of 300 mΩ or more was taken as ×.

將此等結果併記於表1。在表1中，「E+03」係指「×103」。然而，雖未於表1顯示，但放置後馬上之各接觸探針的接觸阻抗係均為非常低之構成的35~55mΩ。 These results are also recorded in Table 1. In Table 1, "E+03" means "×10 3 ". However, although not shown in Table 1, the contact resistance of each of the contact probes immediately after the placement was 35 to 55 mΩ which was a very low configuration.

由表1，於碳被膜中未含有Pd之No.1，含有Pd以外之金屬之W、Al、Zn、Cr、Mo、Ta、Sn、Mn、Zr之No.7~12，14~16係均室溫放置後的接觸阻抗相當大地上升，無法滿足本發明之合格基準(判定×)。另外，Pd量不足本發明之理想範圍之No.2亦未得到所期望之特性。 Table 1 shows No. 1 in which Pd is not contained in the carbon film, and No. 7 to 12, 14 to 16 in which W, Al, Zn, Cr, Mo, Ta, Sn, Mn, and Zr of a metal other than Pd are contained. The contact resistance after standing at room temperature was considerably increased, and the acceptance criteria (judgment x) of the present invention could not be satisfied. Further, No. 2 in which the amount of Pd is less than the desired range of the present invention does not give desired characteristics.

對此，No.3~6係包含將在本發明規定之Pd，呈超出本發明之理想下限的例，均可有效抑制室溫放置後之接觸阻抗的上升(判定○)。 On the other hand, Nos. 3 to 6 include an example in which Pd specified in the present invention is out of the ideal lower limit of the present invention, and it is possible to effectively suppress an increase in contact resistance after standing at room temperature (determination ○).

另外，No.13係包含在本發明未規定之Ru的例，但可有效抑制室溫放置後之接觸阻抗的上升(判定○)。 Further, No. 13 is an example of Ru which is not defined in the present invention, but it is possible to effectively suppress an increase in contact resistance after standing at room temperature (determination ○).

由表1的結果，對於為了確保在室溫放置安定之接觸阻抗，係了解到Pd及Ru的使用為有效。 From the results of Table 1, it was found that the use of Pd and Ru was effective in order to ensure stable contact resistance at room temperature.

實施例2 Example 2

在本實施例中，為了調查Pd之有用性(在高溫之反覆接觸後的接觸阻抗之降低化作用)，製作具備含有表2所示之各種金屬元素之碳被膜的電性接點構件。 In the present embodiment, in order to investigate the usefulness of Pd (the reduction of the contact resistance after repeated contact at a high temperature), an electrical contact member having a carbon film containing various metal elements shown in Table 2 was produced.

具體而言，作為接觸探針，使用前端為圓形狀之彈簧內藏探針(日本yokowo股份有限公司製，YPW-6XA03-062)，除含有表2所示之添加元素以外係使用與前述實施例1同樣作為所製作之各接觸探針，對於純Sn電極所成之電極而言，以85℃進行10萬次接觸，與實施例1同樣作為測定經由對於接觸探針前端之Sn附著之接觸阻抗上升之有無。具體而言，每100次的接觸以1次的頻率進行100mA的通電，其每次測定接觸阻抗，以85℃進行10萬次(100000次)的接觸。並且，算出第1次之接觸時的接觸阻抗值，第101次之接觸時的接觸阻抗值，…第100001次之接觸時的接觸阻抗值的平均，求得上述試驗後之接觸阻抗值，此接觸阻抗值不足300mΩ之構成作為○，300mΩ以上之構成作為×。 Specifically, as a contact probe, a spring-incorporated probe having a rounded tip (YPW-6XA03-062, manufactured by yokowo Co., Ltd., Japan) was used, and the above-described application was carried out in addition to the additive elements shown in Table 2. In the same manner as in Example 1, the electrode formed of the pure Sn electrode was contacted at 100 ° C for 100,000 times, and the contact with Sn attached to the tip end of the contact probe was measured in the same manner as in Example 1. Whether the impedance rises or not. Specifically, 100 mA of energization was performed every 100 times of contact, and the contact resistance was measured every time, and 100,000 times (100,000 times) of contact was performed at 85 °C. Then, the contact resistance value at the time of the first contact, the contact resistance value at the 101st contact, the average of the contact resistance values at the time of the 100th contact, and the contact resistance value after the test are calculated. The configuration in which the contact resistance value is less than 300 mΩ is ○, and the configuration of 300 mΩ or more is taken as ×.

將此等結果併記於表2。雖於表2未顯示，但對於上述試驗的初期，係任一的例均具有50mΩ之低接觸阻抗。 These results are also recorded in Table 2. Although not shown in Table 2, for the initial stage of the above test, any of the examples had a low contact resistance of 50 mΩ.

在表2中，No.1係為未接觸的例，經由高溫試驗而附著有Sn，高溫試驗後之接觸阻抗係1865mΩ，顯著增加。No.2係於碳被膜中未含有添加元素的例，與上述No.1同樣，接觸阻抗值變為極高而到達至測定上限(3Ω)。 In Table 2, No. 1 is an example of no contact, and Sn adheres to the high temperature test, and the contact resistance after the high temperature test is 1865 mΩ, which is remarkably increased. No. 2 is an example in which the additive element is not contained in the carbon film. As in the case of No. 1, the contact resistance value is extremely high and reaches the upper limit of measurement (3 Ω).

No.7係Pd量超過本發明之理想範圍的例，經由高溫試驗而附著有Sn，試驗後之接觸阻抗則增加，未得到所期望之特性(判定×)。 In the example in which the amount of Pd in the No. 7 system exceeded the ideal range of the present invention, Sn adhered to the high temperature test, and the contact resistance after the test increased, and the desired characteristics (judgment x) were not obtained.

另外，No.9係添加在本發明規定之Pd以外之Cr的例，於高溫試驗後附著有Sn，接觸阻抗則增加，未得到所期望之特性(判定×)。對於Cr係如前述之表1的No.10所示，確認到添加同程度之Cr時之室溫放置後之接觸阻抗 亦增加者。 Further, No. 9 is an example in which Cr other than Pd specified in the present invention is added, and Sn adheres after the high-temperature test, and the contact resistance is increased, and the desired characteristics are not obtained (judgment ×). For the Cr system, as shown in No. 10 of Table 1 above, it was confirmed that the contact resistance after leaving the room temperature at the same degree of Cr was added. Also increased.

No.10係添加Ru的例。在前述表1之No.13中，了解到對於添加同程度之Ru而具有室溫放置後之接觸阻抗之降低作用情況而言，對於高溫試驗後，於表面附著有Sn而接觸阻抗顯著增加，無法確保所期望之特性(判定×)。 No. 10 is an example in which Ru is added. In No. 13 of the above-mentioned Table 1, it is understood that the contact resistance after the room temperature is placed for the addition of the same degree of Ru, the contact resistance is remarkably increased after the high temperature test, Sn is attached to the surface, The desired characteristics (decision ×) cannot be guaranteed.

對此，No.3~6係包含將在本發明規定之Pd，在本發明之理想之範圍內(下限及上限)的例，高溫試驗後亦未附著有Sn，可有效抑制試驗後之接觸阻抗的上升(判定○)。 On the other hand, Nos. 3 to 6 include examples in which the Pd specified in the present invention is within the desired range (lower limit and upper limit) of the present invention, and Sn is not adhered after the high temperature test, and the contact after the test can be effectively suppressed. The rise in impedance (judgment ○).

另外，No.8係添加W的例。在前述之表1的No.7中，了解到添加同程度之W而未具有室溫放置後之接觸阻抗之降低作用情況(在表1中判定×)，但高溫試驗後係未看到Sn之附著而有效抑制接觸阻抗的上升(在表2中判定○)。 In addition, No. 8 is an example in which W is added. In No. 7 of the above-mentioned Table 1, it was found that the reduction of the contact resistance after the addition of the same degree of W without room temperature was placed (determined in Table 1), but the Sn was not observed after the high temperature test. The adhesion was suppressed to effectively suppress the rise in contact resistance (○ is determined in Table 2).

當總合考量此等表1及表2的結果，如使用具備以本發明之範圍內含有Pd於表層之碳被膜之接觸探針，確認到抑制與被檢體之Sn的附著，不僅在室溫之長期間放置後，而在高溫的反覆試驗後亦確實抑制接觸阻抗之上升。 When the contact probes having the carbon film containing Pd in the surface layer in the range of the present invention are used, it is confirmed that the adhesion to the Sn of the subject is suppressed, not only in the room, but also in the case of the results of the above-mentioned Tables 1 and 2. After the temperature was placed for a long period of time, the rise in contact resistance was also suppressed after the high temperature repeated test.

對此，使用Pd以外之金屬之情況係雖在任何試驗下，接觸阻抗均上升，或者在任一方的試驗條件中顯示良好之特性，但了解到無法許可雙方之試驗條件者。 In this case, in the case of using a metal other than Pd, the contact resistance is increased under any test, or good characteristics are exhibited in either of the test conditions, but it is understood that the test conditions of both parties cannot be permitted.

實施例3 Example 3

於與在實施例1配置之接觸探針的前端部分相同位置，配置從垂直方向傾斜45°之矽晶圓(模擬接觸探針之傾斜 面)，於矽晶圓上將碳被膜成膜。成膜係以與實施例1同樣的成膜裝置及條件，使碳被膜之膜厚及碳被膜中的Pd含有量之濃度變化而進行。然而，作為基材而使用矽晶圓的理由係為了消除基材之表面凹凸對於碳被膜最表面之凹凸帶來的影響，及對於在微小之前端部之AFM測定減輕技術上的困難。另外，為了作比較而於濺鍍標靶平行地加以配置(即為水平，從垂直方向之角度90°)之矽晶圓，亦進行成膜。 The silicon wafer is tilted by 45° from the vertical direction at the same position as the front end portion of the contact probe configured in Embodiment 1 (the tilt of the analog contact probe) Surface), a carbon film is formed on the wafer. The film formation system was carried out by changing the film thickness of the carbon film and the concentration of the Pd content in the carbon film in the film forming apparatus and conditions similar to those in the first embodiment. However, the reason why the tantalum wafer is used as the substrate is to eliminate the influence of the surface unevenness of the substrate on the unevenness of the outermost surface of the carbon film, and to reduce the technical difficulty of the AFM measurement at the minute end portion. In addition, for the purpose of comparison, the wafer was placed in parallel with the sputtering target (ie, horizontal, 90° from the vertical direction).

試驗從垂直方向45°傾斜之矽晶圓上之碳被膜之在3μm×3μm之範圍測定之算數平均度Ra，和Sn附著之關係的結果，Ra為3nm以下之情況，了解到抑制Sn附著者。因此，使碳被膜之膜厚與碳被膜中之Pd量變化，測定Ra，Ra為3nm以下之情況作為○，Ra為超過3nm之情況作為×，將其結果示於表3。然而，在傾斜為45°之試料中，膜厚越增加，了解到作為比例而有粗度越增加之傾向之故，在表3之膜厚：200nm之資料係從連結膜厚為100nm與400nm時之Ra的資料之直線求得者。另外，在表3之碳被膜之膜厚與碳被膜中之Pd量係換算為成膜於配置成水平之矽晶圓上情況之碳被膜之膜厚與Pd量的值。 The results of the relationship between the arithmetic mean Ra measured in the range of 3 μm × 3 μm of the carbon film on the wafer inclined at 45° in the vertical direction and the adhesion of Sn, and the case where Ra is 3 nm or less, it is known that the inhibitor of Sn is suppressed. . Therefore, the film thickness of the carbon film and the amount of Pd in the carbon film were changed, and when Ra was Ra, Ra was 3 nm or less, and when Ra was more than 3 nm, the result was shown in Table 3. However, in the sample having an inclination of 45°, the film thickness increased, and the tendency to increase the thickness as a ratio was observed. The film thickness in Table 3: 200 nm was from the connection film thickness of 100 nm and 400 nm. The time of Ra's data is obtained by the straight line. In addition, the film thickness of the carbon film of Table 3 and the amount of Pd in the carbon film are converted into the value of the film thickness and the amount of Pd of the carbon film formed on the wafer which is placed horizontally.

由表3，對於碳被膜之Pd量為23原子%以下之情況，係在任何膜厚，Ra可為3nm以下(即，抑制Sn附著)，特別是對於膜厚為200nm以下之情況，了解到Pd超過23原子%而可抑制Sn附著至50原子%以下程度之範圍者。 In Table 3, when the amount of Pd in the carbon film is 23 atom% or less, it is any film thickness, Ra can be 3 nm or less (that is, Sn adhesion is suppressed), and in particular, when the film thickness is 200 nm or less, it is understood that When Pd exceeds 23 atom%, the range in which Sn adheres to 50 atom% or less can be suppressed.

另一方面，在水平(從垂直方向的角度為90°)地配置之試料的Ra測定結果中，在表3所示之膜厚及Pd量之範圍中，Ra全部成為非常小之0.1nm<Ra<0.3nm的值，未看到膜厚及Pd量的影響。此係從垂直方向的角度為90°之情況(即，如在接觸探針等之電性接點構件而言，與軸線垂直的面)，即使控制膜厚及Pd量，對於此部分之Sn附著抑制效果係並不那麼有影響，而欲控制在從垂直方向40~50°程度之情況(即，如在接觸探針等之電性接點構件而言，與軸線具有40~50°之角度的面)之表面粗度，而顯示控制膜厚及Pd量者則非常有效。 On the other hand, in the Ra measurement results of the samples placed horizontally (90° from the vertical direction), in the range of the film thickness and the amount of Pd shown in Table 3, Ra was all very small 0.1 nm< The value of Ra < 0.3 nm did not show the influence of the film thickness and the amount of Pd. This is the case where the angle from the vertical direction is 90° (that is, the surface perpendicular to the axis as in the contact of the electrical contact member such as the probe), even if the film thickness and the amount of Pd are controlled, Sn for this portion The adhesion suppression effect is not so influential, but is controlled to be 40 to 50 degrees from the vertical direction (ie, as in the case of an electrical contact member such as a contact probe, 40 to 50 degrees from the axis) The surface roughness of the angled surface is very effective in displaying the thickness of the film and the amount of Pd.

將本申請專利，詳細地另外參照特定之實施形態，已做過詳細說明，該業者可在不脫離本發明之精神與範圍，可加上各種變更或修正。 The present invention has been described in detail with reference to the specific embodiments thereof, and various modifications and changes may be made without departing from the spirit and scope of the invention.

本申請係依據2011年6月15日申請之日本專利申請 (日本特願2011-133483)之構成，其內容係作為參照而放入於此。 This application is based on a Japanese patent application filed on June 15, 2011. The composition of (Japanese Patent Application No. 2011-133483) is incorporated herein by reference.

[產業上之可利用性] [Industrial availability]

本發明之電性接點構件係與被檢體接觸之電性接點構件的表面為含有Pd之碳被膜，理想為適當地控制碳被膜中的Pd量之故，特別是在約85℃程度之高溫的反覆接觸，或在大氣中加以長期間放置之後，亦實現與被檢體之低附著性同時，可抑制接觸阻抗的上升，保持長期間安定之電性接觸。 The surface of the electrical contact member in contact with the object of the present invention is a carbon film containing Pd, and it is desirable to appropriately control the amount of Pd in the carbon film, particularly at about 85 ° C. When the high temperature is repeatedly contacted or placed in the atmosphere for a long period of time, the adhesion to the object is also achieved, and the increase in contact resistance can be suppressed, and the electrical contact for a long period of stability can be maintained.

圖1係顯示在本發明理想所使用之電性接點構件的與被檢體接觸之前端部分之構成的剖面模式圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing the configuration of an end portion of an electrical contact member which is preferably used in the present invention before being in contact with a subject.

Claims (10)

一種電性接點構件，係反覆接觸於被檢體之電性接點構件，其特徵為與前述被檢體接觸之前述電性接點構件的表面係由含有Pd之碳被膜加以構成者。 An electrical contact member is an electrical contact member that repeatedly contacts the object, and is characterized in that the surface of the electrical contact member that is in contact with the subject is composed of a carbon film containing Pd. 如申請專利範圍第1項記載之電性接點構件，其中，含於前述碳被膜中的Pd之含有量係10~50原子%。 The electrical contact member according to the first aspect of the invention, wherein the content of Pd contained in the carbon film is 10 to 50 atom%. 如申請專利範圍第2項記載之電性接點構件，其中，含於前述碳被膜中的Pd之含有量係10~23原子%。 The electrical contact member according to claim 2, wherein the content of Pd contained in the carbon film is 10 to 23 atom%. 如申請專利範圍第1項記載之電性接點構件，其中，前述碳被膜的膜厚係5nm~10μm。 The electrical contact member according to claim 1, wherein the film thickness of the carbon film is 5 nm to 10 μm. 如申請專利範圍第2項記載之電性接點構件，其中，前述碳被膜的膜厚係5nm~10μm。 The electrical contact member according to claim 2, wherein the film thickness of the carbon film is 5 nm to 10 μm. 如申請專利範圍第3項記載之電性接點構件，其中，前述碳被膜的膜厚係5nm~10μm。 The electrical contact member according to claim 3, wherein the film thickness of the carbon film is 5 nm to 10 μm. 如申請專利範圍第1項記載之電性接點構件，其中，前述碳被膜的膜厚係5nm~10μm時，含於前述碳被膜中的Pd之含有量則為10~23原子%，前述碳被膜的膜厚係5nm~200nm時，含於前述碳被膜中的Pd之含有量則為10~50原子%。 The electrical contact member according to claim 1, wherein when the film thickness of the carbon film is 5 nm to 10 μm, the content of Pd contained in the carbon film is 10 to 23 atom%, and the carbon When the film thickness of the film is 5 nm to 200 nm, the content of Pd contained in the carbon film is 10 to 50 atom%. 如申請專利範圍第1項至第7項任一項記載之電性接點構件，其中，所檢查之被檢體係含有Sn。 The electrical contact member according to any one of claims 1 to 7, wherein the inspected system to be inspected contains Sn. 一種檢查用連接裝置，其特徵為具有複數個如申請專利範圍第1項至第7項任一項記載之電性接點構件。 A connection device for inspection, comprising a plurality of electrical contact members according to any one of items 1 to 7 of the patent application. 一種檢查用連接裝置，其特徵為具有複數個如申請專利範圍第8項記載之電性接點構件。 A connecting device for inspection characterized by having a plurality of electrical contact members as recited in claim 8 of the patent application.
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