TW201305355A - Vapor-deposition device and vapor-deposition method - Google Patents

Vapor-deposition device and vapor-deposition method Download PDF

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TW201305355A
TW201305355A TW101108852A TW101108852A TW201305355A TW 201305355 A TW201305355 A TW 201305355A TW 101108852 A TW101108852 A TW 101108852A TW 101108852 A TW101108852 A TW 101108852A TW 201305355 A TW201305355 A TW 201305355A
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vapor deposition
mask
chamber
substrate
holder
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TW101108852A
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Chinese (zh)
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Hiroji Narumi
Hiroyuki Tamura
Eiichi Matsumoto
Masahiro Ichihara
Hiroaki Nagata
Miyuki Tajima
Masaki Yoshioka
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Canon Tokki Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Provided are a vapor-deposition device and method that allow high-precision vapor deposition and long periods of continuous operation. In said vapor-deposition device, in a film-formation chamber (30), a film-formation material evaporated from an evaporation source (1) is deposited on a substrate (4) through openings in a vapor-deposition mask (2), thereby forming a film on said substrate (4) in a pattern defined by the mask (2). Said vapor-deposition device is characterized by the provision of: a mask holder (6) to which the vapor-deposition mask (2) is attached, said mask holder having scatter-control parts provided with control openings (5) that control the direction in which evaporated particles evaporated from the evaporation source (1) scatter; a load-lock chamber (32); a standby chamber (33); and an exchange chamber (31). The mask holder (6) to which the vapor-deposition mask (2) is attached can move back and forth between the abovementioned film-formation chamber (30) and the load-lock chamber (32) and between the load/lock chamber (32) and both the standby chamber (33) and the exchange chamber (31), which contains a removal chamber (34) via which the mask holder (6) can be taken outside the device.

Description

蒸鍍裝置及蒸鍍方法 Vapor deposition device and evaporation method

本發明係關於使藉由蒸鍍遮罩所致之成膜圖案的蒸鍍膜形成在基板上的蒸鍍裝置及蒸鍍方法。 The present invention relates to a vapor deposition device and a vapor deposition method for forming a deposited film of a film formation pattern by a vapor deposition mask on a substrate.

近年來，使用有機電激發光元件的有機EL顯示裝置作為替代CRT或LCD的顯示裝置而備受矚目。 In recent years, an organic EL display device using an organic electroluminescence element has been attracting attention as a display device instead of a CRT or an LCD.

該有機EL顯示裝置係在基板層積形成電極層與複數有機發光層，另外被覆形成密封層的構成，為自發光，與LCD相比，高速響應性優異，可實現高視野角及高對比。 In the organic EL display device, the electrode layer and the plurality of organic light-emitting layers are laminated on the substrate, and the sealing layer is formed to be self-luminous. The high-speed response is excellent compared with the LCD, and a high viewing angle and high contrast can be achieved.

如上所示之有機EL裝置一般係藉由真空蒸鍍法來製造，在真空腔室內使基板與蒸鍍遮罩對位密接來進行蒸鍍，藉由該蒸鍍遮罩，將所希望的成膜圖案的蒸鍍膜形成在基板。 The organic EL device as described above is generally produced by a vacuum deposition method, and a substrate and a vapor deposition mask are placed in close contact with each other in a vacuum chamber to perform vapor deposition, and the vapor deposition mask is used to form a desired layer. A vapor deposited film of a film pattern is formed on the substrate.

此外，在如上所示之有機EL裝置之製造中，伴隨著基板的大型化，用以獲得所希望的成膜圖案的蒸鍍遮罩亦大型化，但是為了該大型化，必須在對蒸鍍遮罩施加張力的狀態下熔接固定在遮罩框架來進行製作，因此大型的蒸鍍遮罩的製造並不容易，而且若該張力不夠充分時，伴隨著遮罩的大型化，會在遮罩中心發生變形，而使蒸鍍遮罩與基板的密接度降低、或者為了考慮該等情形而使遮罩框架變得大型，使得壁厚化或重量的增大更為明顯。 Further, in the production of the organic EL device as described above, the vapor deposition mask for obtaining a desired film formation pattern is also increased in size as the substrate is increased in size, but in order to increase the size, it is necessary to perform vapor deposition. Since the mask is welded and fixed to the mask frame to be produced, the large-sized vapor deposition mask is not easy to manufacture, and if the tension is insufficient, the mask is enlarged and the mask is covered. The center is deformed, and the degree of adhesion between the vapor deposition mask and the substrate is lowered, or the mask frame is made large in consideration of such a situation, so that wall thickness or weight increase is more remarkable.

如上所示，伴隨著基板尺寸的大型化，圖求蒸鍍遮罩 的大型化，但是高精細的遮罩的大型化困難，而且即使可製作，亦會因前述變形的問題而在實用上發生各種問題。 As shown above, with the increase in the size of the substrate, the vapor deposition mask is sought The size of the high-definition mask is difficult to increase, and even if it can be produced, various problems occur in practical use due to the above-described problem of deformation.

此外，例如日本特表2010-511784號等所示，亦有一種將基板與蒸鍍遮罩分離配設，藉由蒸發源及使具有指向性的蒸發粒子發生的開口部，使有機發光層高精度地成膜的方法，但是前述蒸發源及使指向性發生的前述開口部形成一體構造，形成為為了由開口部使蒸發粒子發生而將前述一體構造加熱為高溫的構成，因此在蒸鍍遮罩接受來自蒸發源的輻射熱，無法防止因蒸鍍遮罩的熱膨脹而造成成膜圖案的位置精度降低。 Further, as shown in, for example, Japanese Laid-Open Patent Publication No. 2010-511784, the substrate is separated from the vapor deposition mask, and the organic light-emitting layer is made high by the evaporation source and the opening portion of the evaporating particles having directivity. In the method of forming a film with precision, the evaporation source and the opening portion for causing directivity are integrally formed, and the integrated structure is heated to a high temperature in order to generate evaporating particles from the opening. The cover receives radiant heat from the evaporation source, and it is impossible to prevent the positional accuracy of the film formation pattern from being lowered due to thermal expansion of the vapor deposition mask.

此外，由於蒸發源與蒸鍍遮罩的距離近接，因此成膜時大量材料會附著在蒸鍍遮罩，而有必須頻繁替換的問題點。 In addition, since the distance between the evaporation source and the vapor deposition mask is close, a large amount of material adheres to the vapor deposition mask at the time of film formation, and there is a problem that it must be frequently replaced.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特表2010-511784號公報 [Patent Document 1] Japanese Patent Publication No. 2010-511784

本發明係解決如上所示之各種問題，目的在提供一種蒸鍍裝置及蒸鍍方法，其係伴隨著基板的大型化，無須使蒸鍍遮罩同等地大型化，即使為比基板更為小型的蒸鍍遮罩，亦使基板在分離狀態下作相對移動，而可大範圍地將 藉由蒸鍍遮罩所致之成膜圖案的蒸鍍膜進行蒸鍍，而且保持在分離狀態下作相對移動，藉此不僅構造簡易，且可效率佳且快速地進行蒸鍍，此外，形成為即使在保持分離狀態下，亦由於將限制用開口部設在蒸發源與蒸鍍遮罩之間，限制蒸發粒子的飛散方向而使來自鄰接或分離位置的蒸發口部的蒸發粒子不會通過而防止成膜圖案重疊，並且在具有設有該限制用開口部的飛散限制部的遮罩保持具附設蒸鍍遮罩的構成，該遮罩保持具係不僅作為飛散限制部，亦可抑制來自蒸發源的輻射熱的入射，在作為使基板與蒸鍍遮罩在分離狀態下作相對移動的構成的同時，可進行高精度的蒸鍍，藉由並排設置交換室，來進行附設有蒸鍍遮罩的遮罩保持具的交換，藉此可長時間連續運轉。 The present invention has been made in view of the above problems, and it is an object of the invention to provide a vapor deposition device and a vapor deposition method which are required to increase the size of a substrate without increasing the size of the vapor deposition mask, even if it is smaller than the substrate. The vapor deposition mask also allows the substrate to move relative to each other in a separated state, and can be widely used. The vapor deposition film of the film formation pattern by the vapor deposition mask is vapor-deposited and relatively moved while being separated, whereby the structure is not only simple, but also vapor deposition can be performed efficiently and quickly, and is formed into Even when the separation state is maintained, the restriction opening portion is provided between the evaporation source and the vapor deposition mask, and the scattering direction of the evaporation particles is restricted, so that the evaporation particles from the adjacent or separated position of the evaporation port do not pass. The mask holder is provided with a vapor deposition mask attached to the scattering holder having the restriction portion for the restriction, and the mask holder is not only a scattering restriction portion but also suppresses evaporation. The incident of the radiant heat of the source is configured to relatively move the substrate and the vapor deposition mask in a separated state, and high-precision vapor deposition can be performed, and the vapor deposition mask is provided by arranging the exchange chambers in parallel. The exchange of the mask holders allows continuous operation for a long time.

參照所附圖示，說明本發明之要旨。 The gist of the present invention will be described with reference to the accompanying drawings.

關於一種蒸鍍裝置，其係構成為：在成膜室30中，將由蒸發源1所蒸發的成膜材料透過蒸鍍遮罩2的遮罩開口部而堆積在基板4上，藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜被形成在基板4上的蒸鍍裝置，其特徵為：在前述蒸發源1及與該蒸發源1呈對向狀態所配設的前述基板4之間，配設遮罩保持具6，該遮罩保持具6具有設有限制由前述蒸發源1所蒸發的前述成膜材料的蒸發粒子的飛散方向的限制用開口部5的飛散限制部，在該遮罩保持具6附設與前述基板4呈分離狀態所配設的前述蒸鍍遮 罩2，相對於附設有前述蒸鍍遮罩2的前述遮罩保持具6及前述蒸發源1，在保持與前述蒸鍍遮罩2的分離狀態下以相對移動自如的方式構成前述基板4，且具備有交換室31，該交換室31具有：附設有前述蒸鍍遮罩2的前述遮罩保持具6可與前述成膜室30往來的負載鎖定室32；附設有前述蒸鍍遮罩2的前述遮罩保持具6可與前述負載鎖定室32往來的待機室33；及可將附設有前述蒸鍍遮罩2的前述遮罩保持具6取出至裝置外部的取出室34。 In the vapor deposition apparatus, the film formation material evaporated by the evaporation source 1 is passed through the mask opening of the vapor deposition mask 2, and is deposited on the substrate 4 by the vapor deposition apparatus. The vapor deposition film of the film formation pattern determined by the plating mask 2 is formed on the substrate 4, and is characterized in that the evaporation source 1 and the substrate 4 disposed in a state of being opposed to the evaporation source 1 A mask holder 6 having a scattering restricting portion that restricts the opening portion 5 for restricting the scattering direction of the evaporating particles of the film forming material evaporated by the evaporation source 1 is disposed, The mask holder 6 is provided with the vapor deposition cover disposed in a state of being separated from the substrate 4 The cover 2 is configured to be relatively movable with respect to the mask holder 6 and the evaporation source 1 to which the vapor deposition mask 2 is attached, while being held in a separated state from the vapor deposition mask 2, And an exchange chamber 31 having a load lock chamber 32 to which the mask holder 6 to which the vapor deposition mask 2 is attached and which can be connected to the film formation chamber 30; and the vapor deposition mask 2 attached thereto The mask holder 6 can be in the standby chamber 33 that can be connected to the load lock chamber 32; and the mask holder 6 with the vapor deposition mask 2 attached can be taken out to the take-out chamber 34 outside the device.

此外，關於如申請專利範圍第1項之蒸鍍裝置，其中，前述遮罩保持具6係在前述成膜室30之外具備有具有溫度控制部9C的被溫度控制部。 In the vapor deposition device according to the first aspect of the invention, the mask holder 6 includes a temperature control unit having a temperature control unit 9C in addition to the film formation chamber 30.

此外，關於如申請專利範圍第2項之蒸鍍裝置，其中，前述遮罩保持具6係以可在前述成膜室30與前述交換室31自由移動的方式，以安裝卸除自如的方式構成被溫度控制部與溫度控制部9C。 Further, in the vapor deposition device according to the second aspect of the invention, the mask holder 6 is configured to be detachably attachable to the film forming chamber 30 and the exchange chamber 31 so as to be freely attachable and detachable. The temperature control unit and the temperature control unit 9C.

此外，關於一種蒸鍍裝置，其係構成為：在成膜室30中，將由蒸發源1所蒸發的成膜材料透過蒸鍍遮罩2的遮罩開口部3而堆積在基板4上，藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜被形成在基板4上的蒸鍍裝置，其特徵為：在前述蒸發源1及與該蒸發源1呈對向狀態所配設的前述基板4之間，配設遮罩保持具6，該遮罩保持具6具有設有限制由前述蒸發源1所蒸發的前述成膜材料的蒸發粒子的飛散方向的限制用開口部5的飛散限制部，在該遮罩保持具6附設與前述基板4呈分離狀態所配設的 前述蒸鍍遮罩2，相對於附設有前述蒸鍍遮罩2的前述遮罩保持具6及前述蒸發源1，在保持與前述蒸鍍遮罩2的分離狀態下以相對移動自如的方式構成前述基板4，且具備有交換室31，該交換室31具有：附設有前述蒸鍍遮罩2的前述遮罩保持具6可與前述成膜室30往來的負載鎖定室32；附設有前述蒸鍍遮罩2的前述遮罩保持具6可與前述負載鎖定室32往來的待機室33；及將前述蒸鍍遮罩2與前述遮罩保持具6進行洗淨的洗淨室37。 In addition, in the film forming chamber 30, the film forming material evaporated by the evaporation source 1 is passed through the mask opening 3 of the vapor deposition mask 2, and is deposited on the substrate 4. The vapor deposition film of the film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4, and is characterized in that the evaporation source 1 and the evaporation source 1 are disposed opposite each other. A mask holder 6 is disposed between the substrates 4, and the mask holder 6 has a scattering opening for restricting the opening portion 5 for restricting the scattering direction of the evaporation particles of the film forming material evaporated by the evaporation source 1. a restricting portion that is disposed in a state in which the mask holder 6 is attached to the substrate 4 The vapor deposition mask 2 is configured to be relatively movable with respect to the mask holder 6 and the evaporation source 1 to which the vapor deposition mask 2 is attached, while being kept in a separated state from the vapor deposition mask 2. The substrate 4 is provided with an exchange chamber 31 having a load lock chamber 32 to which the mask holder 6 to which the vapor deposition mask 2 is attached, and the film formation chamber 30; A standby chamber 33 in which the mask holder 6 of the plating mask 2 can pass the load lock chamber 32, and a cleaning chamber 37 in which the vapor deposition mask 2 and the mask holder 6 are cleaned.

此外，關於如申請專利範圍第4項之蒸鍍裝置，其中，前述洗淨室37係具備有貯留洗淨液的液槽38。 In the vapor deposition device of the fourth aspect of the invention, the cleaning chamber 37 is provided with a liquid tank 38 for storing the cleaning liquid.

此外，關於如申請專利範圍第5項之蒸鍍裝置，其中，前述交換室31係具備有具有貯留淋洗液的液槽41的淋洗室40。 In the vapor deposition device according to the fifth aspect of the invention, the exchange chamber 31 is provided with a rinsing chamber 40 having a liquid tank 41 for storing the eluent.

此外，關於如申請專利範圍第6項之蒸鍍裝置，其中，前述蒸鍍遮罩2或前述遮罩保持具6的至少一方的洗淨或淋洗係併用超音波來進行。 In the vapor deposition device of the sixth aspect of the invention, the vapor deposition mask 2 or at least one of the mask holders 6 is washed or rinsed and ultrasonic waves are used.

此外，關於如申請專利範圍第6項之蒸鍍裝置，其中，洗淨液或淋洗液的至少一方係構成為藉由設在前述洗淨室外或淋洗室外的溶液控制機構來控制液量或溫度。 Further, in the vapor deposition device of claim 6, wherein at least one of the cleaning liquid or the eluent is configured to control the amount of liquid by a solution control mechanism provided outside the washing chamber or outside the showering chamber. Or temperature.

此外，關於如申請專利範圍第4項之蒸鍍裝置，其中，設有乾燥機構，其係將前述蒸鍍遮罩2或前述遮罩保持具6的至少一方，在洗淨後進行乾燥。 In the vapor deposition device of the fourth aspect of the invention, the vapor deposition device is provided with at least one of the vapor deposition mask 2 or the mask holder 6, and is dried after washing.

此外，關於如申請專利範圍第4項之蒸鍍裝置，其中，前述遮罩保持具6係在前述成膜室30之外具備有具有 溫度控制部9C的被溫度控制部。 In the vapor deposition device of the fourth aspect of the invention, the mask holder 6 is provided in addition to the film formation chamber 30. The temperature control unit of the temperature control unit 9C.

此外，關於如申請專利範圍第10項之蒸鍍裝置，其中，前述遮罩保持具6係以可在前述成膜室30與前述交換室31自由移動的方式，以安裝卸除自如的方式構成被溫度控制部與溫度控制部9C。 The vapor deposition device according to claim 10, wherein the mask holder 6 is configured to be detachably attachable to the film forming chamber 30 and the exchange chamber 31 so as to be freely attachable and detachable. The temperature control unit and the temperature control unit 9C.

此外，關於一種蒸鍍裝置，其係構成為：在成膜室30中，將由蒸發源1所蒸發的成膜材料透過蒸鍍遮罩2的遮罩開口部3而堆積在基板4上，藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜被形成在基板4上的蒸鍍裝置，其特徵為：在前述蒸發源1及與該蒸發源1呈對向狀態所配設的前述基板4之間，配設遮罩保持具6，該遮罩保持具6具有設有限制由前述蒸發源1所蒸發的前述成膜材料的蒸發粒子的飛散方向的限制用開口部5的飛散限制部，在該遮罩保持具6附設與前述基板4呈分離狀態所配設的前述蒸鍍遮罩2，相對於附設有前述蒸鍍遮罩2的前述遮罩保持具6及前述蒸發源1，在保持與前述蒸鍍遮罩2的分離狀態下以相對移動自如的方式構成前述基板4，且具備有交換室31，該交換室31具有：附設有前述蒸鍍遮罩2的前述遮罩保持具6可與前述成膜室30往來的負載鎖定室32；附設有前述蒸鍍遮罩2的前述遮罩保持具6可與前述負載鎖定室32往來的待機室33；將附設有前述蒸鍍遮罩2的前述遮罩保持具6進行洗淨的洗淨室37；及使附著在前述蒸鍍遮罩2或前述遮罩保持具6的至少一方的材料剝離且進行回收的材料剝離回收室43。 In addition, in the film forming chamber 30, the film forming material evaporated by the evaporation source 1 is passed through the mask opening 3 of the vapor deposition mask 2, and is deposited on the substrate 4. The vapor deposition film of the film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4, and is characterized in that the evaporation source 1 and the evaporation source 1 are disposed opposite each other. A mask holder 6 is disposed between the substrates 4, and the mask holder 6 has a scattering opening for restricting the opening portion 5 for restricting the scattering direction of the evaporation particles of the film forming material evaporated by the evaporation source 1. In the restricting portion, the vapor deposition mask 2 disposed in a state in which the mask holder 6 is separated from the substrate 4 is attached to the mask holder 6 and the evaporation source to which the vapor deposition mask 2 is attached. 1. The substrate 4 is configured to be relatively movable in a state of being separated from the vapor deposition mask 2, and includes an exchange chamber 31 having the aforementioned mask to which the vapor deposition mask 2 is attached. The cover holder 6 can be connected to the load lock chamber 32 of the film forming chamber 30; The mask holder 6 of the vapor deposition mask 2 is a standby chamber 33 that can be connected to the load lock chamber 32, and the cleaning chamber 37 that cleans the mask holder 6 with the vapor deposition mask 2 attached thereto. And a material peeling and collecting chamber 43 which is peeled off and adhered to at least one of the vapor deposition mask 2 or the mask holder 6.

此外，關於如申請專利範圍第12項之蒸鍍裝置，其中，前述材料剝離回收室43的材料剝離機構係使用乾冰噴洗。 The vapor deposition apparatus according to claim 12, wherein the material peeling mechanism of the material peeling recovery chamber 43 is sprayed with dry ice.

此外，關於如申請專利範圍第13項之蒸鍍裝置，其中，前述材料剝離回收室43係具備有潔淨空氣的導入機構、及潔淨空氣與二氧化碳的排氣機構。 In the vapor deposition device of claim 13, the material separation and recovery chamber 43 is provided with an introduction mechanism for clean air and an exhaust mechanism for clean air and carbon dioxide.

此外，關於如申請專利範圍第13項之蒸鍍裝置，其中，使用前述乾冰噴洗來使附著在蒸鍍遮罩2的材料剝離時，在蒸鍍遮罩2的基板4側靠近設置遮罩吸附板47。 Further, in the vapor deposition device of the thirteenth aspect of the invention, in the case where the material adhering to the vapor deposition mask 2 is peeled off by the dry ice blasting, the mask is placed close to the substrate 4 side of the vapor deposition mask 2. Adsorption plate 47.

此外，關於如申請專利範圍第15項之蒸鍍裝置，其中，前述遮罩吸附板47係磁石板、電磁石板或靜電板的任一者。 The vapor deposition device according to claim 15, wherein the mask adsorption plate 47 is any one of a magnet plate, an electromagnetic stone plate, and an electrostatic plate.

此外，關於如申請專利範圍第12項之蒸鍍裝置，其中，前述材料剝離回收室43係具備有：吸引以前述材料剝離機構所剝離的材料的吸引機構；及收集所吸引到的材料，且排出至前述交換室31外的排出機構。 The vapor deposition apparatus according to claim 12, wherein the material separation and recovery chamber 43 includes a suction mechanism that sucks a material that is peeled off by the material peeling mechanism, and a material that is attracted by the collection, and The discharge mechanism is discharged to the outside of the exchange chamber 31.

此外，關於如申請專利範圍第12項之蒸鍍裝置，其中，前述遮罩保持具6係在前述成膜室30之外具備有具有溫度控制部9C的被溫度控制部。 In the vapor deposition device of claim 12, the mask holder 6 is provided with a temperature control unit having a temperature control unit 9C in addition to the film formation chamber 30.

此外，關於如申請專利範圍第18項之蒸鍍裝置，其中，前述遮罩保持具6係以可在前述成膜室30與前述交換室31自由移動的方式，以安裝卸除自如的方式構成被溫度控制部與溫度控制部9C。 The vapor deposition device according to claim 18, wherein the mask holder 6 is configured to be detachably attached to the film forming chamber 30 and the exchange chamber 31 so as to be attachable and detachable. The temperature control unit and the temperature control unit 9C.

此外，關於如申請專利範圍第1項之蒸鍍裝置，其中 ，前述交換室31係以前述成膜室30之相對前述基板4的相對移動方向呈正交的橫向並排設置。 Further, regarding the vapor deposition device of claim 1, wherein The exchange chambers 31 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4 of the film forming chamber 30.

此外，關於如申請專利範圍第1項之蒸鍍裝置，其中，前述遮罩保持具6係將前述限制用開口部5的形狀，形成為前述蒸發源1側的開口面積小於前述基板4側的開口面積的形狀。 In the vapor deposition device of the first aspect of the invention, the mask holder 6 has a shape in which the opening portion 5 is formed such that an opening area on the side of the evaporation source 1 is smaller than a side of the substrate 4 The shape of the opening area.

此外，關於如申請專利範圍第1項之蒸鍍裝置，其中，將前述成膜材料形成為有機材料。 Further, in the vapor deposition device according to the first aspect of the invention, the film forming material is formed as an organic material.

此外，關於一種蒸鍍方法，其特徵為：使用前述如申請專利範圍第1項至第22項中任一項之蒸鍍裝置，在前述基板4上形成藉由前述蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜。 Further, a vapor deposition method characterized by using the vapor deposition device according to any one of claims 1 to 22 above, wherein the substrate 4 is formed by the vapor deposition mask 2 A vapor deposited film of a film formation pattern.

本發明係構成為如上所述，因此成為一種蒸鍍裝置及蒸鍍方法，其係伴隨著基板的大型化，無須使蒸鍍遮罩同等地大型化，即使為比基板更為小型的蒸鍍遮罩，亦使基板在分離狀態下作相對移動，而可大範圍地將藉由蒸鍍遮罩所致之成膜圖案的蒸鍍膜進行蒸鍍，而且保持在分離狀態下作相對移動，藉此不僅構造簡易，且可效率佳且快速地進行蒸鍍，此外，形成為即使在保持分離狀態下，亦由於將限制用開口部設在蒸發源與蒸鍍遮罩之間，限制蒸發粒子的飛散方向而使來自鄰接或分離位置的蒸發口部的蒸發粒子不會通過而防止成膜圖案重疊，並且使蒸鍍遮罩接 觸具有設有該限制用開口部的飛散限制部的遮罩保持具來作附設的構成，且具備有交換室，該交換室具有：附設有前述蒸鍍遮罩的前述遮罩保持具可與前述成膜室往來的負載鎖定室；附設有前述蒸鍍遮罩的前述遮罩保持具可與前述負載鎖定室往來的待機室；及可將附設有前述蒸鍍遮罩的前述遮罩保持具取出至裝置外部的取出室，藉此附設有蒸鍍遮罩的遮罩保持具可與負載鎖定室、待機室、及取出室往來，使得蒸鍍遮罩的投入、取出變得較容易，因此伴隨著遮罩保持具的交換的成膜工程的停止時間會變短，蒸鍍裝置的運轉率會提升，在作為使基板與蒸鍍遮罩在分離狀態下作相對移動的構成的同時，可進行高精度的蒸鍍。 Since the present invention is configured as described above, it is a vapor deposition device and a vapor deposition method, and it is not necessary to increase the size of the vapor deposition mask in accordance with the increase in size of the substrate, and it is even smaller than the substrate. The mask also allows the substrate to be relatively moved in a separated state, and the vapor deposited film of the film formation pattern by the vapor deposition mask can be vapor-deposited in a wide range, and kept in a separated state for relative movement. This is not only simple in structure, but also efficient and rapid vapor deposition, and is formed so as to restrict the evaporating particles by providing the restricting opening between the evaporation source and the vapor deposition mask even when the separation state is maintained. The scattering direction causes the evaporating particles from the evaporation port portion of the adjacent or separated position to not pass, thereby preventing the film formation pattern from overlapping, and the vapor deposition mask is connected The cover holder having the scattering restricting portion provided with the restricting opening portion is attached, and includes an exchange chamber having the mask holder to which the vapor deposition mask is attached a load lock chamber to and from the film forming chamber; a standby chamber to which the mask holder of the vapor deposition mask is attached to the load lock chamber; and the mask holder to which the vapor deposition mask is attached The extraction chamber is taken out to the outside of the device, whereby the mask holder with the vapor deposition mask can be connected to the load lock chamber, the standby chamber, and the take-out chamber, so that the vapor deposition mask can be easily inserted and taken out. The stoppage time of the film formation process with the exchange of the mask holder is shortened, the operation rate of the vapor deposition device is increased, and the substrate and the vapor deposition mask are relatively moved in a separated state, and Perform high-precision evaporation.

尤其在製造有機EL裝置時，可對應基板的大型化，且亦可精度佳地進行有機發光層的蒸鍍，亦可防止因遮罩接觸所造成的基板、蒸鍍遮罩、蒸鍍膜的損傷，成為藉由小於基板的蒸鍍遮罩，可實現高精度的蒸鍍的有機EL裝置製造用的蒸鍍裝置及蒸鍍方法。 In particular, when manufacturing an organic EL device, it is possible to increase the size of the substrate, and it is also possible to perform vapor deposition of the organic light-emitting layer with high precision, and to prevent damage of the substrate, the vapor deposition mask, and the deposited film due to contact of the mask. A vapor deposition device and a vapor deposition method for producing an organic EL device capable of achieving high-precision vapor deposition by a vapor deposition mask smaller than a substrate.

此外，在申請專利範圍第2項所記載之發明中，藉由遮罩保持具在成膜室之外具備具有溫度控制部的被溫度控制部，可將遮罩保持具的溫度保持為一定，抑制附設在遮罩保持具的蒸鍍遮罩的熱膨脹，而可高精度地將成膜圖案進行蒸鍍。 Further, in the invention described in claim 2, the temperature of the mask holder can be kept constant by providing the temperature control unit having the temperature control unit outside the film formation chamber by the mask holder. The thermal expansion of the vapor deposition mask attached to the mask holder is suppressed, and the film formation pattern can be vapor-deposited with high precision.

此外，在申請專利範圍第3項所記載之發明中，由於以安裝卸除自如的方式構成例如遮罩保持具的被溫度控制部與成膜室外的溫度控制部之間的媒體搬送路，即使遮罩 保持具具有溫度控制機構，亦可自由地在成膜室與負載鎖定室往來。 Further, in the invention according to the third aspect of the invention, the medium transport path between the temperature control unit of the mask holder and the temperature control unit outside the film formation chamber is configured to be attached and detached, even if Mask The holder has a temperature control mechanism and is also free to communicate with the load lock chamber in the film forming chamber.

此外，在申請專利範圍第4項所記載之發明中，由於在交換室具備有負載鎖定室及待機室，甚至具備有洗淨室來取代取出室，因此即使未將附設有蒸鍍遮罩的遮罩保持具搬出至交換室外，亦可在交換室內進行洗淨。 Further, in the invention described in claim 4, since the exchange chamber is provided with the load lock chamber and the standby chamber, and even the cleaning chamber is provided instead of the take-out chamber, even if the vapor deposition mask is not attached The mask holder is carried out to the outside of the exchange and can also be washed in the exchange room.

此外，在申請專利範圍第5項所記載之發明中，蒸鍍遮罩及遮罩保持具係浸漬在貯留洗淨液的液槽內來進行洗淨，藉此洗淨液遍及細部，至各個角落均可洗淨。 Further, in the invention according to the fifth aspect of the invention, the vapor deposition mask and the mask holder are immersed in a liquid tank for storing the cleaning liquid, and the cleaning liquid is applied to the details. The corners can be washed.

此外，在申請專利範圍第6項所記載之發明中，與洗淨室並排設置而具備淋洗室，藉此可去除殘留在蒸鍍遮罩及遮罩保持具的洗淨液。 Further, in the invention according to the sixth aspect of the invention, the washing chamber is provided in parallel with the washing chamber, whereby the washing liquid remaining in the vapor deposition mask and the mask holder can be removed.

此外，在申請專利範圍第7項所記載之發明中，將蒸鍍遮罩及遮罩保持具浸漬在貯留溶液的液槽內，而且併用超音波，藉此使洗淨效果提高。 Further, in the invention described in claim 7, the vapor deposition mask and the mask holder are immersed in the liquid tank of the storage solution, and ultrasonic waves are used in combination to improve the cleaning effect.

此外，在申請專利範圍第8項所記載之發明中，洗淨液或淋洗液的至少一方係在洗淨室外具備溶液控制機構，藉此可由洗淨室或淋洗室之外調整溶液的液量、溫度，實用性優異。 Further, in the invention according to the eighth aspect of the invention, at least one of the cleaning liquid or the eluent is provided with a solution control means outside the washing chamber, whereby the solution can be adjusted from outside the washing chamber or the rinsing chamber. The amount of liquid, temperature, and practicality are excellent.

此外，在申請專利範圍第9項所記載之發明中，由於具備乾燥機構，可縮短至再利用蒸鍍遮罩及遮罩保持具為止的時間。 Further, in the invention described in claim 9, the drying mechanism can be shortened to a time until the vapor deposition mask and the mask holder are reused.

此外，在申請專利範圍第10、11項所記載之發明中，在申請專利範圍第2、3項之發明形成為在交換室具備 有洗淨室的構成，實用性更加優異。 Further, in the invention described in the claims 10 and 11, the invention of the second and third claims of the patent application is formed in the exchange room. The composition of the washing room is more practical.

此外，在申請專利範圍第12項所記載之發明中，由於在交換室具備負載鎖定室、待機室及洗淨室、另外具備材料剝離回收室，因此可再利用附著在蒸鍍遮罩及遮罩保持具的材料，而使材料使用效率提升。 Further, in the invention according to claim 12, since the exchange chamber includes the load lock chamber, the standby chamber, the washing chamber, and the material separation and recovery chamber, the vapor deposition mask and the cover can be reused. The cover retains the material and increases the efficiency of the material.

此外，在申請專利範圍第13項所記載之發明中，由於以乾冰噴洗使附著在蒸鍍遮罩或遮罩保持具的成膜材料剝離，因此抑制材料分解，而使成膜材料的再利用率提升。 Further, in the invention according to the thirteenth aspect of the invention, the film-forming material adhering to the vapor deposition mask or the mask holder is peeled off by dry ice blasting, thereby suppressing decomposition of the material and re-forming the film-forming material. Increased utilization.

此外，在申請專利範圍第14項所記載之發明中，材料剝離回收室係具備有潔淨空氣的導入機構、及潔淨空氣與二氧化碳的排氣機構，因此當以乾冰噴洗使附著在蒸鍍遮罩或遮罩保持具的成膜材料剝離時，可防止成膜材料劣化，另外將材料剝離回收室內管理成適當的壓力，可使剝離效果發揮至最大限度。 Further, in the invention described in claim 14, the material peeling and collecting chamber is provided with an introduction mechanism for clean air and an exhaust mechanism for clean air and carbon dioxide, so that it is sprayed with dry ice to adhere to the vapor deposition cover. When the film forming material of the cover or the mask holder is peeled off, the film forming material can be prevented from being deteriorated, and the material can be peeled off into the collection chamber and managed to an appropriate pressure, so that the peeling effect can be maximized.

此外，在申請專利範圍第15項所記載之發明中，蒸鍍遮罩係以薄箔形成，若以如申請專利範圍第13項所記載之乾冰噴洗使所附著的成膜材料剝離時，由於會有蒸鍍遮罩損傷之虞，因此在乾冰噴洗時將遮罩吸附板抵碰於蒸鍍遮罩背面，藉此防止蒸鍍遮罩損傷。 Further, in the invention of the fifteenth aspect of the invention, the vapor deposition mask is formed of a thin foil, and when the film-forming material to be adhered is peeled off by dry ice blasting as described in claim 13 of the patent application, Since the vapor deposition mask is damaged, the mask adsorption plate is brought against the back surface of the vapor deposition mask during dry ice spray washing, thereby preventing the vapor deposition mask from being damaged.

此外，在申請專利範圍第16項所記載之發明中，以磁石板、電磁石板或靜電板來形成抵碰於如申請專利範圍第15項之蒸鍍遮罩背面的遮罩吸附板，可使蒸鍍遮罩與背面板的密接性提升，可更加防止蒸鍍遮罩損傷。 Further, in the invention described in claim 16, the magnet slate, the electromagnetic slab, or the electrostatic plate can be used to form a mask adsorption plate that is in contact with the back surface of the vapor deposition mask of claim 15 of the patent application. The adhesion between the vapor deposition mask and the back panel is improved, and the vapor deposition mask damage can be further prevented.

此外，在申請專利範圍第17項所記載之發明中，在材料剝離回收室具備有材料吸引機構，藉此可有效率地回收經剝離的材料，而且具備有收集所吸引到的材料且排出至材料剝離回收室外的機構，因此即使將材料剝離回收室未進行大氣開放，亦可取出材料，而使剝離/回收工程的運轉率提升。 Further, in the invention described in claim 17, the material peeling and collecting chamber is provided with a material suction mechanism, whereby the peeled material can be efficiently recovered, and the material sucked by the collection is discharged to the material. Since the material is peeled off and the outdoor unit is removed, even if the material is removed from the recovery chamber without opening the atmosphere, the material can be taken out, and the operation rate of the peeling/recycling project can be improved.

此外，在申請專利範圍第18、19項所記載之發明中，在如申請專利範圍第10、11項之發明中形成為在交換室具備有材料剝離回收室的構成，藉此使得實用性更加優異。 Further, in the invention described in the eighteenth and eleventh aspects of the patent application, in the invention of the tenth and eleventh aspects of the patent application, the configuration is such that the material exchange separation chamber is provided in the exchange chamber, thereby making the utility more practical. Excellent.

此外，在申請專利範圍第20項所記載之發明中，由於相對成膜室以與基板的相對移動方向呈正交的橫向並排設置交換室，因此可效率佳且省空間地進行蒸鍍遮罩及遮罩保持具的交換。 Further, in the invention of claim 20, since the exchange chamber is arranged side by side in the lateral direction orthogonal to the relative movement direction of the substrate with respect to the film formation chamber, the vapor deposition mask can be efficiently and space-savingly performed. And the exchange of the mask holder.

此外，在申請專利範圍第21項所記載之發明中，由於將遮罩保持具的限制用開口部的形狀形成為蒸發源側的開口面積小於基板側的開口面積的形狀，因此可在限制用開口部的蒸發源側捕捉更多由蒸發源所蒸發的成膜材料的蒸發粒子，而可減低附著在限制用開口部側面的成膜材料，而容易進行將遮罩保持具交換後所附著的成膜材料的剝離/回收。 In the invention described in the twenty-first aspect of the invention, the shape of the opening for the mask holder is such that the opening area on the evaporation source side is smaller than the opening area on the substrate side. The evaporation source side of the opening portion captures more of the evaporation particles of the film formation material evaporated by the evaporation source, and the film formation material adhering to the side surface of the restriction opening portion can be reduced, and the adhesion of the mask holder after the exchange can be easily performed. Peeling/recycling of the film forming material.

此外，在申請專利範圍第22項所記載之發明中，成為有機材料的蒸發裝置，實用性更加優異。 Further, in the invention described in claim 22, the evaporation device which is an organic material is more excellent in practicability.

此外，在申請專利範圍第23項所記載之發明中，成 為發揮前述作用/效果的優異的蒸鍍方法。 Further, in the invention described in claim 23, An excellent vapor deposition method for exerting the aforementioned effects and effects.

根據圖示，顯示本發明之作用，簡單說明被認為適合之本發明之實施形態。 The effects of the present invention are shown in the drawings, and the embodiments of the present invention which are considered to be suitable are briefly described.

在第1圖中，由蒸發源1所蒸發的成膜材料係通過作為飛散限制部所構成的遮罩保持具6的限制用開口部5，並且透過蒸鍍遮罩2的遮罩開口部3而堆積在基板4上，在基板4上形成藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜。 In the first embodiment, the film formation material evaporated by the evaporation source 1 passes through the restriction opening 5 of the mask holder 6 which is a scattering restriction portion, and passes through the mask opening portion 3 of the vapor deposition mask 2. On the substrate 4, a vapor deposited film of a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4.

此時，將前述基板4與前述蒸鍍遮罩2配設成分離狀態，相對於前述蒸鍍遮罩2或前述蒸發源1在保持該分離狀態下以相對移動自如的方式構成該基板4，使該基板4作相對移動，藉此以比蒸鍍遮罩2本身更為寬廣的範圍，在基板4上形成藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜。 At this time, the substrate 4 and the vapor deposition mask 2 are disposed in a separated state, and the substrate 4 is configured to be relatively movable with respect to the vapor deposition mask 2 or the evaporation source 1 while maintaining the separation state. By moving the substrate 4 in a relatively wide range, a vapor deposition film of a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4 in a wider range than the vapor deposition mask 2 itself.

此外，在該蒸鍍遮罩2與蒸發源1之間設置遮罩保持具6，該遮罩保持具6具有設有限制由蒸發源1所蒸發的成膜材料的蒸發粒子的飛散方向的前述限制用開口部5的飛散限制部，藉由限制用開口部5，使來自相鄰或分離位置的蒸發口部8的蒸發粒子不會通過，而即使蒸鍍遮罩2與基板4處於分離狀態，亦防止成膜圖案相重疊。 Further, between the vapor deposition mask 2 and the evaporation source 1, a mask holder 6 having the aforementioned scattering direction in which the evaporation particles of the film forming material evaporated by the evaporation source 1 are disposed is provided. In the scattering restricting portion of the restricting opening portion 5, the evaporating particles from the adjacent evaporating port portion 8 at the separated position are not passed through the restricting opening portion 5, and the vapor deposition mask 2 and the substrate 4 are separated. Also prevents the film formation patterns from overlapping.

此外，例如另外形成為使蒸鍍遮罩2接合而附設在構成該飛散限制部的遮罩保持具6的構成，在該遮罩保持具 6或蒸鍍遮罩2的至少一方設置保持蒸鍍遮罩2的溫度的溫度控制機構9時，抑制來自前述蒸發源1的熱入射而抑制遮罩保持具6或蒸鍍遮罩2的溫度上升，此外，即使蒸鍍遮罩2與基板4呈分離狀態，亦因與該遮罩保持具6相接合，蒸鍍遮罩2的熱會傳導至遮罩保持具6，因此將蒸鍍遮罩2保持為一定溫度的溫度保持功能會提升。 Further, for example, a configuration in which the vapor deposition mask 2 is joined and attached to the mask holder 6 constituting the scattering restricting portion is formed in the mask holder 6 or when at least one of the vapor deposition masks 2 is provided with the temperature control means 9 for maintaining the temperature of the vapor deposition mask 2, the heat from the evaporation source 1 is suppressed, and the temperature of the mask holder 6 or the vapor deposition mask 2 is suppressed. Further, even if the vapor deposition mask 2 is separated from the substrate 4, the heat of the vapor deposition mask 2 is transmitted to the mask holder 6 due to the bonding with the mask holder 6, so that the vapor deposition mask is covered. The temperature retention function of the cover 2 maintained at a certain temperature is increased.

因此，具有該飛散限制部的遮罩保持具6係在達成蒸發粒子飛散方向的限制功能的同時亦達成溫度保持功能，可抑制蒸鍍遮罩2的溫度上升，且將蒸鍍遮罩2保持為一定溫度，而亦不易發生因熱所造成的蒸鍍遮罩2的變形。 Therefore, the mask holder 6 having the scattering restricting portion achieves a temperature retaining function while achieving a function of restricting the evaporating particle scattering direction, and can suppress the temperature rise of the vapor deposition mask 2 and maintain the vapor deposition mask 2 For a certain temperature, deformation of the vapor deposition mask 2 due to heat is less likely to occur.

因此，相對於蒸鍍遮罩2、附設有該蒸鍍遮罩2的遮罩保持具6及蒸發源1，在保持與該蒸鍍遮罩2的分離狀態下使基板4作相對移動，藉此以該相對移動方向連續形成藉由蒸鍍遮罩2所造成的前述成膜圖案的蒸鍍膜，即使為小於基板4的蒸鍍遮罩2，亦以大範圍形成蒸鍍膜，而且因來自相鄰或分離位置的蒸發口部8的入射而造成成膜圖案的重疊、或因熱所造成的變形等均充分被抑制，而形成為可進行高精度蒸鍍的蒸鍍裝置。 Therefore, with respect to the vapor deposition mask 2, the mask holder 6 and the evaporation source 1 to which the vapor deposition mask 2 is attached, the substrate 4 is relatively moved while being held in a separated state from the vapor deposition mask 2, In this case, the vapor deposition film of the film formation pattern formed by the vapor deposition mask 2 is continuously formed in the relative movement direction, and even if it is smaller than the vapor deposition mask 2 of the substrate 4, the vapor deposition film is formed in a wide range, and The deposition of the evaporation port portion 8 at the adjacent or separated position causes the deposition of the film formation pattern or the deformation due to heat to be sufficiently suppressed, and is formed into a vapor deposition device capable of performing high-precision vapor deposition.

此外，附設蒸鍍遮罩2的遮罩保持具6具備有交換室，其具有可與成膜室往來的負載鎖定室，因此不會將成膜室曝露在大氣而可將遮罩保持具6作交換，以此輕易進行蒸鍍遮罩2(遮罩保持具6)的投入、取出，伴隨著遮罩保持具6的交換的成膜工程的停止時間會變短，蒸鍍裝置的運轉率會提升。此外，例如在交換室內設有洗淨室時， 無須將遮罩保持具6搬出至裝置外部，即可在交換室內進行洗淨，可更有效率地進行遮罩保持具6的交換洗淨。此外，若例如在交換室內設有材料剝離回收室時，在材料洗淨時，可將由蒸鍍遮罩2及遮罩保持具6所剝離的材料進行回收而再利用，而使材料使用效率提升。 Further, the mask holder 6 to which the vapor deposition mask 2 is attached is provided with an exchange chamber having a load lock chamber which can be connected to the film formation chamber, so that the mask holder can be prevented from being exposed to the atmosphere. In order to facilitate the introduction and removal of the vapor deposition mask 2 (the mask holder 6), the stoppage time of the film formation process with the exchange of the mask holder 6 is shortened, and the operation rate of the vapor deposition apparatus is shortened. Will improve. In addition, for example, when a washing room is provided in the exchange room, The mask holder 6 can be washed in the exchange chamber without being carried out to the outside of the apparatus, and the mask holder 6 can be more efficiently exchanged and cleaned. Further, for example, when a material peeling recovery chamber is provided in the exchange chamber, when the material is washed, the material peeled off by the vapor deposition mask 2 and the mask holder 6 can be recovered and reused, thereby improving the material use efficiency. .

[實施例1] [Example 1]

根據圖示，說明本發明之具體實施例1。 Specific embodiment 1 of the present invention will be described based on the drawings.

第1圖係蒸鍍機構的概略說明圖。 Fig. 1 is a schematic explanatory view of a vapor deposition mechanism.

本實施例係構成為：將由蒸發源1所蒸發的成膜材料(例如供製造有機EL裝置之用的有機材料)透過蒸鍍遮罩2的遮罩開口部3而堆積在基板4上，在基板4上形成藉由該蒸鍍遮罩2所設定的成膜圖案的蒸鍍膜的蒸鍍裝置，其構成為：將基板4與蒸鍍遮罩2配設成分離狀態，相對於蒸鍍遮罩2、作為設有限制用開口部的飛散限制部所構成的遮罩保持具6及蒸發源1，在保持與蒸鍍遮罩2的分離狀態下以相對移動自如的方式構成該基板4，藉由該相對移動，以比蒸鍍遮罩2更大範圍，在基板4上形成藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜。 In the present embodiment, the film forming material (for example, an organic material for manufacturing an organic EL device) evaporated by the evaporation source 1 is passed through the mask opening 3 of the vapor deposition mask 2, and is deposited on the substrate 4 A vapor deposition device for forming a vapor deposition film of a film formation pattern set by the vapor deposition mask 2 is formed on the substrate 4, and the substrate 4 and the vapor deposition mask 2 are disposed in a separated state, and are opposed to the vapor deposition mask. The cover 2 and the mask holder 6 and the evaporation source 1 which are the scattering restricting portions provided with the restriction opening portion are configured to be relatively movable in a state of being separated from the vapor deposition mask 2, and the substrate 4 is configured to be relatively movable. By this relative movement, a vapor deposition film of a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4 in a larger range than the vapor deposition mask 2.

此外，在該蒸鍍遮罩2與蒸發源1之間設有遮罩保持具6，該遮罩保持具6構成設有限制由並排設置複數個的蒸發源1的蒸發口部8所蒸發的成膜材料的蒸發粒子的飛散方向的限制用開口部5的飛散限制部，限制飛散角度θ較大的蒸發粒子，藉此使來自相鄰或分離位置的蒸發口部 8的蒸發粒子不會通過。 Further, between the vapor deposition mask 2 and the evaporation source 1, a mask holder 6 is provided, and the mask holder 6 is configured to restrict evaporation by the evaporation port portion 8 in which a plurality of evaporation sources 1 are arranged side by side. The scattering restricting portion of the evaporating particles of the film forming material restricts the evaporating particles having a large scattering angle θ by the scattering restricting portion of the opening portion 5, thereby causing the evaporation port portion from the adjacent or separated position. The evaporating particles of 8 will not pass.

亦即，形成為藉由來自複數蒸發口部8的蒸發粒子來進行蒸鍍的構成，構成為：可蒸鍍在大面積的基板4，並且藉由限制用開口部5來防止來自相鄰或分離位置的蒸發口部8的入射，而使得即使蒸鍍遮罩2與基板4處於分離狀態，亦防止成膜圖案相重疊。 In other words, the vapor deposition is performed by evaporating particles from the plurality of evaporation ports 8 so as to be vapor-deposited on the substrate 4 having a large area, and the opening portion 5 is restricted from being adjacent or The incidence of the evaporation port portion 8 at the separation position prevents the film formation patterns from overlapping even if the vapor deposition mask 2 and the substrate 4 are separated.

此外，將朝橫向並排設置的各蒸發口部8設在朝前述蒸發源1的前述橫長擴散部27突出的導入部28的前端，在該導入部28的周圍或該導入部28間配設有將蒸發源1的熱遮斷的熱遮斷部19。符號26為蒸發粒子發生部(坩堝)。 Further, each of the evaporation port portions 8 arranged side by side in the lateral direction is provided at the tip end of the introduction portion 28 that protrudes toward the horizontally long diffusion portion 27 of the evaporation source 1, and is disposed around the introduction portion 28 or between the introduction portions 28. There is a thermal blocking portion 19 that blocks the heat of the evaporation source 1. Reference numeral 26 is an evaporating particle generating unit (坩埚).

該熱遮斷部19為將熱遮蔽者即可，本實施例係採用冷卻板，具有供給冷卻媒體的媒體路，設置冷卻媒體一面剝奪來自蒸發源1的熱一面通過媒體路而將該熱作交換的熱交換部，來提高熱遮蔽效果。 The thermal blocking portion 19 may be a heat shielder. In this embodiment, a cooling plate is provided, and a media path for supplying a cooling medium is provided. When the cooling medium is disposed, the heat from the evaporation source 1 is deprived and the heat is passed through the media path. Exchange the heat exchange section to improve the heat shielding effect.

第2圖係成膜室30及交換室31的上面圖。 Fig. 2 is a top view of the film forming chamber 30 and the exchange chamber 31.

交換室31係以與基板4的相對移動方向呈正交的橫向與設有上述蒸鍍機構的成膜室30並排設置，將在成膜室30蒸鍍後的材料所附著的蒸鍍遮罩2及遮罩保持具6與新的或洗淨後的蒸鍍遮罩2及遮罩保持具6交換自如的方式構成，藉此成為可長時間連續運轉的生產性高的蒸鍍裝置。 The exchange chamber 31 is provided in parallel with the film forming chamber 30 in which the vapor deposition mechanism is disposed in a lateral direction orthogonal to the relative movement direction of the substrate 4, and a vapor deposition mask to which the material deposited in the film forming chamber 30 is adhered is attached. 2 and the mask holder 6 is configured to be exchangeable with the new or washed vapor deposition mask 2 and the mask holder 6, thereby providing a highly productive vapor deposition apparatus which can be continuously operated for a long period of time.

具體而言，蒸鍍遮罩2及遮罩保持具6係在成膜室30被使用在成膜而材料接連附著在蒸鍍遮罩2(及遮罩保 持具6)而堆積，藉此以不會對成膜圖案造成影響的方式，而且為了抑制因蒸鍍膜剝離所造成的無用物的發生，而必須定期交換。 Specifically, the vapor deposition mask 2 and the mask holder 6 are used in the film formation chamber 30 to form a film, and the materials are successively attached to the vapor deposition mask 2 (and the mask protection). The holder 6) is deposited so as not to affect the film formation pattern, and in order to suppress the occurrence of unnecessary substances due to peeling of the vapor deposition film, it is necessary to periodically exchange.

[實施例2] [Embodiment 2]

實施例2係如第3圖之圖示，實施例1的交換室31由負載鎖定室32、待機室33、及取出室34所構成。 In the second embodiment, as shown in FIG. 3, the exchange chamber 31 of the first embodiment is constituted by the load lock chamber 32, the standby chamber 33, and the take-out chamber 34.

負載鎖定室32係分別透過閘閥而與(第3圖中位於深行方向的)成膜室30、待機室33及取出室34呈連設。此外，在待機室33設有用以由室外搬入蒸鍍遮罩2及遮罩保持具6的閘閥，在取出室34設有用以將蒸鍍遮罩2及遮罩保持具6搬出至室外的閘閥。 The load lock chambers 32 are connected to the film forming chamber 30 (the downstream direction in the third drawing), the standby chamber 33, and the take-out chamber 34 through the gate valves. Further, a gate valve for carrying the vapor deposition mask 2 and the mask holder 6 from the outside is provided in the standby chamber 33, and a gate valve for carrying the vapor deposition mask 2 and the mask holder 6 to the outside is provided in the take-out chamber 34. .

首先，在蒸鍍後要進行交換的蒸鍍遮罩2及遮罩保持具6係移動至交換室31內的負載鎖定室32。此時，若遮罩保持具6具有被溫度控制部時，以遮罩保持具6可在成膜室30與負載鎖定室32往來的方式，遮罩保持具6的被溫度控制部與(設在室外的)外部溫度控制部9C之間的媒體搬送路35以安裝卸除自如的方式構成。亦即，構成為：當使遮罩保持具6由成膜室30移動至負載鎖定室32時，使媒體搬送路35(之與遮罩保持具6的被溫度控制部相連接的連接部36)由遮罩保持具6的被溫度控制部卸下。其中，以被溫度控制部而言，可採用供水等冷媒流通的媒體路等，以溫度控制部9C而言，係可採用將前述冷媒冷卻的熱交換部等。 First, the vapor deposition mask 2 and the mask holder 6 to be exchanged after vapor deposition are moved to the load lock chamber 32 in the exchange chamber 31. At this time, when the mask holder 6 has the temperature control unit, the temperature control unit of the holder 6 is shielded so that the mask holder 6 can pass through the film formation chamber 30 and the load lock chamber 32. The medium conveyance path 35 between the outdoor temperature control units 9C is configured to be detachable. In other words, when the mask holder 6 is moved from the film forming chamber 30 to the load lock chamber 32, the medium transport path 35 (the connection portion 36 connected to the temperature control portion of the mask holder 6) is configured. ) is removed by the temperature control unit of the mask holder 6. In the temperature control unit, a medium passage or the like through which a refrigerant such as a water supply flows may be used, and the temperature control unit 9C may be a heat exchange unit that cools the refrigerant.

移動至負載鎖定室32的成膜材料附著蒸鍍遮罩2及遮罩保持具6係由負載鎖定室32移動至取出室34，由取出室34的取出口(搬出用閘閥)搬出至交換室31外。由待機室33的投入口(搬入用閘閥)搬入至待機室33之新穎且使用於成膜的蒸鍍遮罩2及遮罩保持具6係移動至負載鎖定室32，由負載鎖定室32移動至成膜室30，在成膜工程中被使用。 The deposition material adhering vapor deposition mask 2 and the mask holder 6 moved to the load lock chamber 32 are moved to the take-out chamber 34 by the load lock chamber 32, and are taken out to the exchange chamber by the take-out port (the discharge gate valve) of the take-out chamber 34. 31 outside. The vapor deposition mask 2 and the mask holder 6 which are used for film formation by the input port (the loading gate valve) of the standby chamber 33 are moved to the standby chamber 33, and are moved to the load lock chamber 32, and are moved by the load lock chamber 32. The film forming chamber 30 is used in a film forming process.

搬出至交換室31外的成膜材料附著蒸鍍遮罩2及遮罩保持具6係在另外被配備在成膜室外的洗淨室進行洗淨，將所附著的成膜材料及微粒或污染物等髒污去除，再次搬入至待機室33，經由負載鎖定室32而被移動至成膜室30。 The film forming material adhering to the outside of the exchange chamber 31 is adhered to the vapor deposition mask 2 and the mask holder 6 is washed in a washing chamber which is additionally provided outside the film forming chamber, and the deposited film forming material and particles or contamination are adhered. The dirt and the like are removed, moved into the standby chamber 33 again, and moved to the film forming chamber 30 via the load lock chamber 32.

[實施例3] [Example 3]

實施例3係如第4圖之圖示，實施例1、2的交換室31由負載鎖定室32、待機室33、及洗淨室37所構成。 In the third embodiment, as shown in FIG. 4, the exchange chambers 31 of the first and second embodiments are constituted by the load lock chamber 32, the standby chamber 33, and the washing chamber 37.

與實施例2同樣地，在蒸鍍後要進行交換的蒸鍍遮罩2及遮罩保持具6係移動至交換室31內的負載鎖定室32，另外移動至被並排設置在負載鎖定室32的洗淨室37來進行洗淨。此外，洗淨後的蒸鍍遮罩2及遮罩保持具6係經由負載鎖定室32，移動至待機室33，以備下次成膜之用。 Similarly to the second embodiment, the vapor deposition mask 2 and the mask holder 6 to be exchanged after the vapor deposition are moved to the load lock chamber 32 in the exchange chamber 31, and moved to be placed side by side in the load lock chamber 32. The washing room 37 is washed. Further, the vapor deposition mask 2 and the mask holder 6 after the cleaning are moved to the standby chamber 33 via the load lock chamber 32 for the next film formation.

在洗淨室37係具備有貯留洗淨液的液槽38；及被設在洗淨室外，用以控制洗淨液的液量及溫度等的外部洗淨 液控制機構39，將成膜材料附著蒸鍍遮罩及遮罩保持具6浸漬在液槽來進行洗淨。此時，若併用超音波，洗淨效果會提升。 The washing chamber 37 is provided with a liquid tank 38 for storing the washing liquid, and an external washing device for controlling the liquid amount and temperature of the washing liquid, which is installed outside the washing chamber. The liquid control unit 39 immerses the film forming material adhesion vapor deposition mask and the mask holder 6 in the liquid tank to perform cleaning. At this time, if ultrasonic waves are used together, the cleaning effect will increase.

此外，為了使附著在洗淨後的蒸鍍遮罩2及遮罩保持具6的殘留洗淨液氣化，若在洗淨室37具備乾燥機構，則實用性更加優異。 In addition, in order to vaporize the residual cleaning liquid adhering to the vapor deposition mask 2 and the mask holder 6 after the cleaning, the cleaning chamber 37 is provided with a drying mechanism, which is more practical.

此外，若在成膜材料附著蒸鍍遮罩2及遮罩保持具6洗淨後施行淋洗處理時，如第5圖之圖示，與洗淨室37並排設置而設有淋洗室40。符號41係貯留淋洗液的液槽，42係被設在淋洗室外，用以控制淋洗液的液量及溫度等的外部淋洗液控制機構。洗淨後的蒸鍍遮罩2及遮罩保持具6亦可構成為：在例如洗淨室37以有機溶媒進行洗淨後，在淋洗室40以純水進行淋洗處理，將殘留洗淨液去除，移動至待機室33，以備下次成膜之用。洗淨室37及淋洗室40係藉由具備溶液控制機構，可由外部來管理洗淨液的溫度、量等，實用性優異。 In addition, when the deposition material is adhered to the deposition mask 2 and the mask holder 6 and then subjected to the rinsing treatment, as shown in FIG. 5, the rinsing chamber 40 is provided in parallel with the cleaning chamber 37. . Reference numeral 41 is a liquid tank for storing the eluent, and 42 is an external eluent control mechanism for controlling the liquid amount and temperature of the eluent, which is provided outside the shower. The vapor deposition mask 2 and the mask holder 6 after washing may be configured such that, for example, the cleaning chamber 37 is washed with an organic solvent, and then rinsed in the shower chamber 40 with pure water to remove the residual washing. The cleaning liquid is removed and moved to the standby chamber 33 for use in the next film formation. The washing chamber 37 and the rinsing chamber 40 are provided with a solution control mechanism, and can manage the temperature and amount of the washing liquid from the outside, and are excellent in practicability.

此外，藉由在洗淨室37及淋洗室40的外部溶液控制機構配備蒸餾機構，可將洗淨後的溶液分離，可再利用溶液，而可刪減使用量。 Further, by providing a distillation mechanism in the external solution control mechanism of the washing chamber 37 and the rinsing chamber 40, the washed solution can be separated, and the solution can be reused, and the amount of use can be reduced.

[實施例4] [Example 4]

實施例4係如第6圖之圖示，實施例1~3的交換室31由負載鎖定室32、材料剝離回收室43、洗淨室37、及待機室33所構成，實施例4係形成為使成膜材料由成膜 後材料所附著的蒸鍍遮罩2及遮罩保持具6剝離，將所剝離的材料進行回收、再利用，藉此使材料使用效率提升的構成。 In the fourth embodiment, as shown in Fig. 6, the exchange chambers 31 of the first to third embodiments are composed of a load lock chamber 32, a material peeling recovery chamber 43, a washing chamber 37, and a standby chamber 33, and the fourth embodiment is formed. In order to make the film forming material from film formation The vapor deposition mask 2 and the mask holder 6 to which the rear material adheres are peeled off, and the material to be peeled off is recovered and reused, whereby the material use efficiency is improved.

若將成膜材料所附著之進行交換的蒸鍍遮罩2及遮罩保持具6設為遮罩單元A、接著使用的蒸鍍遮罩2及遮罩保持具6設為遮罩單元B，來說明交換時的流程時，首先，遮罩單元A由成膜室30移動至負載鎖定室32，由負載鎖定室32移動至材料剝離回收室43。遮罩單元B係由待機室33移動至負載鎖定室32，由負載鎖定室32移動至成膜室30。移動至材料剝離回收室43的遮罩單元A係在材料剝離工程後移動至洗淨室37。或者，亦可移動至負載鎖定室32，由負載鎖定室32移動至待機室33，由待機室33移動至洗淨室37。洗淨後的遮罩單元A係形成為移動至待機室33，以備下次交換時之用的構成。 When the vapor deposition mask 2 and the mask holder 6 to which the film formation material is exchanged are used as the mask unit A, the vapor deposition mask 2 and the mask holder 6 to be used next are used as the mask unit B, To explain the flow at the time of exchange, first, the mask unit A is moved from the film forming chamber 30 to the load lock chamber 32, and moved from the load lock chamber 32 to the material peeling recovery chamber 43. The mask unit B is moved from the standby chamber 33 to the load lock chamber 32, and is moved by the load lock chamber 32 to the film formation chamber 30. The mask unit A moved to the material peeling recovery chamber 43 is moved to the washing chamber 37 after the material peeling process. Alternatively, it may be moved to the load lock chamber 32, moved to the standby chamber 33 by the load lock chamber 32, and moved to the washing chamber 37 by the standby chamber 33. The cleaned mask unit A is formed to move to the standby chamber 33 for use in the next exchange.

在材料剝離回收室43之附著在蒸鍍遮罩2及遮罩保持具6的成膜材料的剝離係使用乾冰噴洗來進行。乾冰噴洗係藉由因高速噴吹乾冰珠粒所致的運動能量、因低溫所致的熱衝擊、乾冰進入至與母材之間而急遽氣化時的昇華能量而使其剝離，但是即使與例如電漿、紫外線、臭氧、雷射等乾式洗淨方法相比較，亦具有有機材料不易分解的優點。因此，使有機材料由母材剝離的方法有很多種，但是若使所附著的有機材料剝離而再次作為成膜材料來使用時，係以乾冰噴洗為佳。 The peeling of the film forming material adhering to the vapor deposition mask 2 and the mask holder 6 in the material peeling recovery chamber 43 is performed by dry ice blasting. The dry ice rinsing is peeled off by the kinetic energy caused by the high-speed injection of dry ice beads, the thermal shock due to low temperature, and the sublimation energy when the dry ice enters the base material and is rapidly vaporized. Even when compared with dry cleaning methods such as plasma, ultraviolet light, ozone, and laser, there is an advantage that the organic material is not easily decomposed. Therefore, there are many methods for peeling off the organic material from the base material. However, when the adhered organic material is peeled off and used as a film forming material again, it is preferably sprayed with dry ice.

此外，蒸鍍遮罩2及遮罩保持具6係蒸發粒子附著多 數在蒸發源側之面，因此由蒸發源側照射乾冰。此外，藉由將遮罩保持具6的限制用開口部5的形狀形成為蒸發源1側的開口面積小於基板4側的開口面積的形狀，成膜材料多數附著在遮罩保持具6之蒸發源1側之面，因此所附著的大部分成膜材料的剝離變得較為容易。此外，由於可對朝向與基板4的相對移動方向呈正交的橫向為長形的遮罩單元全面照射乾冰，因此如第7圖所示，形成為照射乾冰的前端部分(乾冰噴射部44)進行移動的機構。符號45為乾冰發生部，46為噴射部移動機構。此外，蒸鍍遮罩2為薄箔狀，因此若進行乾冰噴洗時，會有損傷之虞，因此如第8圖所示，在由磁石板、電磁石板或靜電板所構成的遮罩吸附板47配備移動機構，可構成為對蒸鍍遮罩2靠近設置自如，乾冰噴洗時藉由與蒸鍍遮罩相密接，以使蒸鍍遮罩不會損傷。 In addition, the vapor deposition mask 2 and the mask holder 6 are more attached to the evaporating particles. The number is on the side of the evaporation source side, so the dry ice is irradiated from the evaporation source side. In addition, the shape of the opening portion 5 for the mask holder 6 is such that the opening area on the side of the evaporation source 1 is smaller than the opening area on the side of the substrate 4, and the film forming material is mostly attached to the evaporation of the mask holder 6. Since the surface of the source 1 side is removed, it is easy to peel off most of the film-forming material to be attached. Further, since the mask unit that is elongated in the lateral direction orthogonal to the relative movement direction of the substrate 4 can be entirely irradiated with the dry ice, as shown in Fig. 7, the front end portion of the dry ice is irradiated (the dry ice ejecting portion 44). The institution that moves. Reference numeral 45 is a dry ice generating portion, and 46 is an injection portion moving mechanism. Further, since the vapor deposition mask 2 has a thin foil shape, there is a risk of damage when the dry ice is sprayed. Therefore, as shown in Fig. 8, the mask is formed by a magnet plate, an electromagnetic stone plate or an electrostatic plate. The plate 47 is provided with a moving mechanism, and can be configured to be close to the vapor deposition mask 2, and is closely adhered to the vapor deposition mask during dry ice blasting so that the vapor deposition mask is not damaged.

此外，由蒸鍍遮罩2及遮罩保持具6所剝離的成膜材料係在材料回收機構17進行回收。材料回收機構17係被配設在遮罩保持具6的下部，所剝離的材料落下而收納在材料回收機構17。此外，乾冰噴洗係在潔淨空氣中進行，但是為了提高材料回收功能，形成為：在材料剝離回收室43的上部設置潔淨空氣導入機構，在材料回收機構17的下部設置排氣機構的構成。此係一面由材料剝離回收室43的上部使潔淨空氣導入，一面利用被配設在材料回收機構17的排氣機構來將潔淨空氣與乾冰氣化後的二氧化碳進行排氣，藉此材料剝離回收室43的壓力係一面保持 為一定，一面氣體流會通過材料回收機構17，藉此亦可捕捉飛散至材料剝離回收室43的成膜材料。 Further, the film forming material peeled off by the vapor deposition mask 2 and the mask holder 6 is collected by the material recovery mechanism 17. The material recovery mechanism 17 is disposed at a lower portion of the mask holder 6, and the separated material is dropped and stored in the material recovery mechanism 17. Further, the dry ice blasting is performed in clean air, but in order to improve the material recovery function, a clean air introduction mechanism is provided in the upper portion of the material separation and recovery chamber 43, and an exhaust mechanism is provided in the lower portion of the material recovery mechanism 17. In this case, the clean air is introduced from the upper portion of the material separation and recovery chamber 43 and the carbon dioxide gasified by the clean air and the dry ice is exhausted by the exhaust mechanism disposed in the material recovery mechanism 17 to remove the material. The pressure of chamber 43 is maintained on one side. To be sure, the gas flow passes through the material recovery mechanism 17, whereby the film formation material scattered to the material stripping recovery chamber 43 can also be captured.

此外，材料回收機構17係以與材料剝離回收室43安裝卸除自如的方式構成，未將材料剝離回收室43作大氣開放，即可將所回收的材料取出至交換室外。 Further, the material recovery mechanism 17 is configured to be attachable and detachable to the material peeling and collecting chamber 43, and the material to be recovered can be taken out of the exchange outside without opening the material separation and recovery chamber 43 to the atmosphere.

之後的洗淨室37中的洗淨工程係在去除在材料剝離工程中未去除掉的成膜材料及微粒或污染物的目的下進行，適用以與上述洗淨方法相同的方式使用洗淨液的濕式製程。此外，成膜材料所附著的蒸鍍遮罩2及遮罩保持具6係在材料剝離工程後進行液體洗淨，因此附著在洗淨前的蒸鍍遮罩2及遮罩保持具6的材料為少量，因此溶解於洗淨液的材料亦變少，因此洗淨液的補充/替換周期變長，而成為環境負荷少的蒸鍍裝置。 The cleaning process in the subsequent cleaning chamber 37 is performed for the purpose of removing the film-forming material and fine particles or contaminants which have not been removed in the material stripping process, and is suitable for use in the same manner as the above-described washing method. Wet process. Further, since the vapor deposition mask 2 and the mask holder 6 to which the film formation material adheres are liquid-washed after the material peeling process, the vapor deposition mask 2 and the material of the mask holder 6 before the cleaning are adhered. Since the amount of the material to be dissolved in the cleaning liquid is also small, the replenishing/replacement cycle of the cleaning liquid becomes long, and the vapor deposition device has a small environmental load.

其中，本發明並非侷限於實施例1~4，各構成要件的具體構成係可適當設計。 However, the present invention is not limited to the embodiments 1 to 4, and the specific configuration of each constituent element can be appropriately designed.

1‧‧‧蒸發源 1‧‧‧ evaporation source

2‧‧‧蒸鍍遮罩 2‧‧‧ evaporated mask

3‧‧‧遮罩開口部 3‧‧‧Mask opening

4‧‧‧基板 4‧‧‧Substrate

5‧‧‧限制用開口部 5‧‧‧Restriction opening

6‧‧‧遮罩保持具 6‧‧‧Mask holder

8‧‧‧蒸發口部 8‧‧‧Evaporation mouth

9C‧‧‧溫度控制部 9C‧‧‧ Temperature Control Department

19‧‧‧熱遮斷部 19‧‧‧ Thermal Interruption

26‧‧‧蒸發粒子發生部(坩堝) 26‧‧‧Evaporation Particle Generation Department (坩埚)

27‧‧‧橫長擴散部 27‧‧‧Horizontal Diffusion Department

28‧‧‧導入部 28‧‧‧Importing Department

30‧‧‧成膜室 30‧‧‧filming room

31‧‧‧交換室 31‧‧‧ exchange room

32‧‧‧負載鎖定室 32‧‧‧Load lock room

33‧‧‧待機室 33‧‧‧Standby room

34‧‧‧取出室 34‧‧‧Extraction room

35‧‧‧媒體搬送路 35‧‧‧Media transfer road

36‧‧‧連接部 36‧‧‧Connecting Department

37‧‧‧洗淨室 37‧‧‧Clean room

38‧‧‧液槽 38‧‧‧ liquid tank

39‧‧‧外部洗淨液控制機構 39‧‧‧External cleaning fluid control mechanism

40‧‧‧淋洗室 40‧‧‧Leaning room

41‧‧‧液槽 41‧‧‧ liquid tank

42‧‧‧外部淋洗液控制機構 42‧‧‧External eluent control mechanism

43‧‧‧材料剝離回收室 43‧‧‧Material stripping recovery room

44‧‧‧乾冰噴射部 44‧‧‧dry ice blasting department

45‧‧‧乾冰發生部 45‧‧‧dry ice generation department

46‧‧‧噴射部移動機構 46‧‧‧Injection moving mechanism

47‧‧‧遮罩吸附板 47‧‧‧mask adsorption plate

第1圖係實施例1之蒸鍍機構的概略說明圖。 Fig. 1 is a schematic explanatory view showing a vapor deposition mechanism of the first embodiment.

第2圖係實施例1之成膜室及交換室的說明上面圖。 Fig. 2 is a top view showing the film forming chamber and the exchange chamber of the first embodiment.

第3圖係實施例2之交換室的說明側面圖。 Fig. 3 is a side elevational view showing the exchange chamber of the second embodiment.

第4圖係實施例3之交換室的說明側面圖。 Fig. 4 is a side elevational view showing the exchange chamber of the third embodiment.

第5圖係實施例3之交換室的其他構成例的說明側面圖。 Fig. 5 is a side elevational view showing another configuration example of the exchange chamber of the third embodiment.

第6圖係實施例4之交換室的說明側面圖。 Fig. 6 is a side elevational view showing the exchange chamber of the fourth embodiment.

第7圖係實施例4之乾冰噴射部的移動機構的說明圖。 Fig. 7 is an explanatory view showing a moving mechanism of the dry ice blasting portion of the fourth embodiment.

第8圖係實施例4之遮罩吸附板的說明圖。 Fig. 8 is an explanatory view of a mask adsorption plate of Example 4.

1‧‧‧蒸發源 1‧‧‧ evaporation source

2‧‧‧蒸鍍遮罩 2‧‧‧ evaporated mask

3‧‧‧遮罩開口部 3‧‧‧Mask opening

4‧‧‧基板 4‧‧‧Substrate

5‧‧‧限制用開口部 5‧‧‧Restriction opening

6‧‧‧遮罩保持具 6‧‧‧Mask holder

8‧‧‧蒸發口部 8‧‧‧Evaporation mouth

19‧‧‧熱遮斷部 19‧‧‧ Thermal Interruption

26‧‧‧蒸發粒子發生部(坩堝) 26‧‧‧Evaporation Particle Generation Department (坩埚)

27‧‧‧橫長擴散部 27‧‧‧Horizontal Diffusion Department

28‧‧‧導入部 28‧‧‧Importing Department

Claims (23)

一種蒸鍍裝置，其係構成為：在成膜室中，將由蒸發源所蒸發的成膜材料透過蒸鍍遮罩的遮罩開口部而堆積在基板上，藉由該蒸鍍遮罩所決定的成膜圖案的蒸鍍膜被形成在基板上的蒸鍍裝置，其特徵為：在前述蒸發源及與該蒸發源呈對向狀態所配設的前述基板之間，配設遮罩保持具，該遮罩保持具具有設有限制由前述蒸發源所蒸發的前述成膜材料的蒸發粒子的飛散方向的限制用開口部的飛散限制部，在該遮罩保持具附設與前述基板呈分離狀態所配設的前述蒸鍍遮罩，相對於附設有前述蒸鍍遮罩的前述遮罩保持具及前述蒸發源，在保持與前述蒸鍍遮罩的分離狀態下以相對移動自如的方式構成前述基板，且具備有交換室，該交換室具有：附設有前述蒸鍍遮罩的前述遮罩保持具可與前述成膜室往來的負載鎖定室；附設有前述蒸鍍遮罩的前述遮罩保持具可與前述負載鎖定室往來的待機室；及可將附設有前述蒸鍍遮罩的前述遮罩保持具取出至裝置外部的取出室。 A vapor deposition device in which a film forming material evaporated by an evaporation source is passed through a mask opening of a vapor deposition mask and deposited on a substrate in a film forming chamber, and is determined by the vapor deposition mask The vapor deposition film of the film formation pattern is formed on the substrate, and is characterized in that a mask holder is disposed between the evaporation source and the substrate disposed in a state of being opposed to the evaporation source. The mask holder has a scattering restricting portion that defines a restricting opening for restricting a scattering direction of the evaporating particles of the film forming material evaporated by the evaporation source, and the mask holder is attached to the substrate in a separated state. The vapor deposition mask is configured to form the substrate so as to be relatively movable while being held in a separated state from the vapor deposition mask with respect to the mask holder and the evaporation source to which the vapor deposition mask is attached. And an exchange chamber having: the load lock chamber with the mask holder attached to the vapor deposition mask and the film forming chamber; and the mask holder with the vapor deposition mask attached thereto can The load lock chamber exchanges standby chamber; and can be attached to the vapor deposition mask has the mask holder taken out chamber to the outside of the apparatus. 如申請專利範圍第1項之蒸鍍裝置，其中，前述遮罩保持具係在前述成膜室之外具備有具有溫度控制部的被溫度控制部。 The vapor deposition device according to the first aspect of the invention, wherein the mask holder is provided with a temperature control unit having a temperature control unit in addition to the film formation chamber. 如申請專利範圍第2項之蒸鍍裝置，其中，前述遮罩保持具係以可在前述成膜室與前述交換室自由移動的方式，以安裝卸除自如的方式構成被溫度控制部與溫度控制部。 The vapor deposition device according to the second aspect of the invention, wherein the mask holder is configured to be detachably movable in the film forming chamber and the exchange chamber, and is configured to be temperature-controlled and temperature-controlled. Control department. 一種蒸鍍裝置，其係構成為：在成膜室中，將由蒸發源所蒸發的成膜材料透過蒸鍍遮罩的遮罩開口部而堆積在基板上，藉由該蒸鍍遮罩所決定的成膜圖案的蒸鍍膜被形成在基板上的蒸鍍裝置，其特徵為：在前述蒸發源及與該蒸發源呈對向狀態所配設的前述基板之間，配設遮罩保持具，該遮罩保持具具有設有限制由前述蒸發源所蒸發的前述成膜材料的蒸發粒子的飛散方向的限制用開口部的飛散限制部，在該遮罩保持具附設與前述基板呈分離狀態所配設的前述蒸鍍遮罩，相對於附設有前述蒸鍍遮罩的前述遮罩保持具及前述蒸發源，在保持與前述蒸鍍遮罩的分離狀態下以相對移動自如的方式構成前述基板，且具備有交換室，該交換室具有：附設有前述蒸鍍遮罩的前述遮罩保持具可與前述成膜室往來的負載鎖定室；附設有前述蒸鍍遮罩的前述遮罩保持具可與前述負載鎖定室往來的待機室；及將前述蒸鍍遮罩與前述遮罩保持具進行洗淨的洗淨室。 A vapor deposition device in which a film forming material evaporated by an evaporation source is passed through a mask opening of a vapor deposition mask and deposited on a substrate in a film forming chamber, and is determined by the vapor deposition mask The vapor deposition film of the film formation pattern is formed on the substrate, and is characterized in that a mask holder is disposed between the evaporation source and the substrate disposed in a state of being opposed to the evaporation source. The mask holder has a scattering restricting portion that defines a restricting opening for restricting a scattering direction of the evaporating particles of the film forming material evaporated by the evaporation source, and the mask holder is attached to the substrate in a separated state. The vapor deposition mask is configured to form the substrate so as to be relatively movable while being held in a separated state from the vapor deposition mask with respect to the mask holder and the evaporation source to which the vapor deposition mask is attached. And an exchange chamber having: the load lock chamber with the mask holder attached to the vapor deposition mask and the film forming chamber; and the mask holder with the vapor deposition mask attached thereto can The load lock chamber exchanges standby chamber; the vapor deposition mask and the mask holder and the cleaning chamber is cleaned. 如申請專利範圍第4項之蒸鍍裝置，其中，前述洗淨室係具備有貯留洗淨液的液槽。 The vapor deposition device of claim 4, wherein the cleaning chamber is provided with a liquid tank for storing the cleaning liquid. 如申請專利範圍第5項之蒸鍍裝置，其中，前述交換室係具備有具有貯留淋洗液的液槽的淋洗室。 The vapor deposition device of claim 5, wherein the exchange chamber is provided with a rinsing chamber having a liquid tank for storing the eluent. 如申請專利範圍第6項之蒸鍍裝置，其中，前述蒸鍍遮罩或前述遮罩保持具的至少一方的洗淨或淋洗係併用超音波來進行。 The vapor deposition device according to claim 6, wherein at least one of the vapor deposition mask or the mask holder is washed or rinsed and ultrasonic waves are used. 如申請專利範圍第6項之蒸鍍裝置，其中，洗淨 液或淋洗液的至少一方係構成為藉由設在前述洗淨室外或淋洗室外的溶液控制機構來控制液量或溫度。 Such as the vapor deposition device of claim 6 of the patent scope, wherein At least one of the liquid or the eluent is configured to control the amount of liquid or temperature by a solution control mechanism provided outside the washing chamber or outside the shower. 如申請專利範圍第4項之蒸鍍裝置，其中，設有乾燥機構，其係將前述蒸鍍遮罩或前述遮罩保持具的至少一方，在洗淨後進行乾燥。 The vapor deposition device of claim 4, wherein the vapor deposition device is provided with at least one of the vapor deposition mask or the mask holder, and is dried after washing. 如申請專利範圍第4項之蒸鍍裝置，其中，前述遮罩保持具係在前述成膜室之外具備有具有溫度控制部的被溫度控制部。 The vapor deposition device according to claim 4, wherein the mask holder is provided with a temperature control unit having a temperature control unit in addition to the film formation chamber. 如申請專利範圍第10項之蒸鍍裝置，其中，前述遮罩保持具係以可在前述成膜室與前述交換室自由移動的方式，以安裝卸除自如的方式構成被溫度控制部與溫度控制部。 The vapor deposition device of claim 10, wherein the mask holder is configured to be temperature-selectable and temperature-free by mounting and detaching so as to be freely movable in the film forming chamber and the exchange chamber Control department. 一種蒸鍍裝置，其係構成為：在成膜室中，將由蒸發源所蒸發的成膜材料透過蒸鍍遮罩的遮罩開口部而堆積在基板上，藉由該蒸鍍遮罩所決定的成膜圖案的蒸鍍膜被形成在基板上的蒸鍍裝置，其特徵為：在前述蒸發源及與該蒸發源呈對向狀態所配設的前述基板之間，配設遮罩保持具，該遮罩保持具具有設有限制由前述蒸發源所蒸發的前述成膜材料的蒸發粒子的飛散方向的限制用開口部的飛散限制部，在該遮罩保持具附設與前述基板呈分離狀態所配設的前述蒸鍍遮罩，相對於附設有前述蒸鍍遮罩的前述遮罩保持具及前述蒸發源，在保持與前述蒸鍍遮罩的分離狀態下以相對移動自如的方式構成前述基板，且具備有交換室，該交換室具有：附設有前述蒸鍍遮罩的前述遮罩 保持具可與前述成膜室往來的負載鎖定室；附設有前述蒸鍍遮罩的前述遮罩保持具可與前述負載鎖定室往來的待機室；將附設有前述蒸鍍遮罩的前述遮罩保持具進行洗淨的洗淨室；及使附著在前述蒸鍍遮罩或前述遮罩保持具的至少一方的材料剝離且進行回收的材料剝離回收室。 A vapor deposition device in which a film forming material evaporated by an evaporation source is passed through a mask opening of a vapor deposition mask and deposited on a substrate in a film forming chamber, and is determined by the vapor deposition mask The vapor deposition film of the film formation pattern is formed on the substrate, and is characterized in that a mask holder is disposed between the evaporation source and the substrate disposed in a state of being opposed to the evaporation source. The mask holder has a scattering restricting portion that defines a restricting opening for restricting a scattering direction of the evaporating particles of the film forming material evaporated by the evaporation source, and the mask holder is attached to the substrate in a separated state. The vapor deposition mask is configured to form the substrate so as to be relatively movable while being held in a separated state from the vapor deposition mask with respect to the mask holder and the evaporation source to which the vapor deposition mask is attached. And having an exchange chamber having: the aforementioned mask provided with the vapor deposition mask described above a holder having a load lock chamber accessible to the film forming chamber; a standby chamber to which the mask holder of the vapor deposition mask is attached to the load lock chamber; and the mask to which the vapor mask is attached A cleaning chamber for cleaning the holder; and a material peeling and collecting chamber that is separated from the material of the vapor deposition mask or the mask holder and is collected and recovered. 如申請專利範圍第12項之蒸鍍裝置，其中，前述材料剝離回收室的材料剝離機構係使用乾冰噴洗。 The vapor deposition apparatus of claim 12, wherein the material stripping mechanism of the material stripping and recovery chamber is sprayed with dry ice. 如申請專利範圍第13項之蒸鍍裝置，其中，前述材料剝離回收室係具備有潔淨空氣的導入機構、及潔淨空氣與二氧化碳的排氣機構。 The vapor deposition device according to claim 13, wherein the material separation and recovery chamber is provided with an introduction mechanism for clean air and an exhaust mechanism for clean air and carbon dioxide. 如申請專利範圍第13項之蒸鍍裝置，其中，使用前述乾冰噴洗來使附著在蒸鍍遮罩的材料剝離時，在蒸鍍遮罩的基板側靠近設置遮罩吸附板。 The vapor deposition device according to claim 13, wherein when the material adhering to the vapor deposition mask is peeled off by the dry ice blasting, a mask adsorption plate is provided on the substrate side of the vapor deposition mask. 如申請專利範圍第15項之蒸鍍裝置，其中，前述遮罩吸附板係磁石板、電磁石板或靜電板的任一者。 The vapor deposition device of claim 15, wherein the mask adsorption plate is any one of a magnet plate, an electromagnetic stone plate, or an electrostatic plate. 如申請專利範圍第12項之蒸鍍裝置，其中，前述材料剝離回收室係具備有：吸引以前述材料剝離機構所剝離的材料的吸引機構；及收集所吸引到的材料，且排出至前述交換室外的排出機構。 The vapor deposition device according to claim 12, wherein the material separation and recovery chamber includes: a suction mechanism that sucks a material that is peeled off by the material peeling mechanism; and collects the material that is sucked and discharges to the exchange Outdoor discharge mechanism. 如申請專利範圍第12項之蒸鍍裝置，其中，前述遮罩保持具係在前述成膜室之外具備有具有溫度控制部的被溫度控制部。 The vapor deposition device according to claim 12, wherein the mask holder is provided with a temperature control unit having a temperature control unit in addition to the film formation chamber. 如申請專利範圍第18項之蒸鍍裝置，其中，前述遮罩保持具係以可在前述成膜室與前述交換室自由移動 的方式，以安裝卸除自如的方式構成被溫度控制部與溫度控制部。 The vapor deposition device of claim 18, wherein the mask holder is freely movable in the film forming chamber and the exchange chamber The method is configured such that the temperature control unit and the temperature control unit are installed and removed. 如申請專利範圍第1項之蒸鍍裝置，其中，前述交換室係以前述成膜室之相對前述基板的相對移動方向呈正交的橫向並排設置。 The vapor deposition device according to claim 1, wherein the exchange chamber is arranged side by side in a lateral direction orthogonal to a relative movement direction of the substrate in the film formation chamber. 如申請專利範圍第1項之蒸鍍裝置，其中，前述遮罩保持具係將前述限制用開口部的形狀，形成為前述蒸發源側的開口面積小於前述基板側的開口面積的形狀。 In the vapor deposition device of the first aspect of the invention, the mask holder has a shape in which the opening area on the evaporation source side is smaller than an opening area on the substrate side. 如申請專利範圍第1項之蒸鍍裝置，其中，將前述成膜材料形成為有機材料。 The vapor deposition device of claim 1, wherein the film forming material is formed as an organic material. 一種蒸鍍方法，其特徵為：使用前述如申請專利範圍第1項至第22項中任一項之蒸鍍裝置，在前述基板上形成藉由前述蒸鍍遮罩所決定的成膜圖案的蒸鍍膜。 An evaporation method, comprising: forming a film formation pattern determined by the vapor deposition mask on the substrate by using the vapor deposition device according to any one of claims 1 to 22; Evaporation film.
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