TW201304613A - Extreme ultraviolet light generation system - Google Patents

Extreme ultraviolet light generation system Download PDF

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TW201304613A
TW201304613A TW101108311A TW101108311A TW201304613A TW 201304613 A TW201304613 A TW 201304613A TW 101108311 A TW101108311 A TW 101108311A TW 101108311 A TW101108311 A TW 101108311A TW 201304613 A TW201304613 A TW 201304613A
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laser light
light
chamber
pulse laser
irradiated
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TW101108311A
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Chinese (zh)
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TWI580316B (en
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Osamu Wakabayashi
Tatsuya Yanagida
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Gigaphoton Inc
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Priority claimed from JP2011201750A external-priority patent/JP5926521B2/en
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Abstract

To stabilize an intensity of produced extreme ultraviolet light in a chamber apparatus when the chamber apparatus is used in an extreme ultraviolet light generator. A chamber apparatus is used together with at least one laser beam generator. The chamber apparatus comprises: a chamber provided with at least one incident port for introducing at least one laser beam emitted from the at least one laser beam generator into an inside of the chamber; a target supply unit provided in the chamber and supplying a target substance to a predetermined region in the chamber; a laser-focusing optical system focusing the at least one laser beam in the predetermined region; and an optical element correcting a light intensity distribution in a beam cross-section of the at least one laser beam in the predetermined region.

Description

極端紫外光產生裝置 Extreme ultraviolet light generating device

本發明，係有關於用以產生極端紫外(EUV)光之裝置。 The present invention relates to devices for producing extreme ultraviolet (EUV) light.

近年來，伴隨著半導體製程(process)之細微化，在光微影法(lithography)中之細微化係急速地進展，在下一世代中，係成為對於60nm~45nm之細微加工乃至於32nm以下之細微加工有所要求。因此，例如，為了對於32nm以下之細微加工的要求作對應，係期待能夠開發出將用以產生波長13nm程度之EUV光的裝置和縮小投影反射光學系作了組合的曝光裝置。 In recent years, with the miniaturization of semiconductor processes, the miniaturization in lithography has progressed rapidly, and in the next generation, it is fine processing of 60 nm to 45 nm or even 32 nm or less. Subtle processing is required. Therefore, for example, in order to respond to the request for fine processing of 32 nm or less, it is expected that an exposure apparatus that combines a device for generating EUV light having a wavelength of about 13 nm and a reduced projection reflection optical system can be developed.

作為EUV光產生裝置，係周知有以下之3種：使用有經由對於靶材(target)物質照射雷射光而產生的電漿(plasma)之LPP(Laser Produced Plasma)方式裝置、使用有經由放電所產生之電漿的DPP(Discharge Produced Plasma)方式裝置、以及使用有軌道輻射光之SR(Synchrotron Radiation)方式裝置。 The EUV light-generating device is known to have three types of LPP (Laser Produced Plasma) type devices that use plasma generated by irradiating laser light to a target material, and is used by a discharge device. A DPP (Discharge Produced Plasma) type device for generating plasma and an SR (Synchrotron Radiation) device using orbital radiation.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]美國專利第7239686號說明書 [Patent Document 1] US Patent No. 7239686

本發明之其中一個觀點的腔室(chamber)裝置，係為被與至少1個的雷射裝置一同作使用之腔室裝置，其係可具備有：腔室，係被設置有用以將從前述至少1個的雷射裝置所輸出之至少1個的雷射光導入至內部的至少1個的射入口；和靶材供給部，係被設置在前述腔室內，並用以對於前述腔室內之特定的區域而供給靶材物質；和雷射集光光學系，係用以將前述至少1個的雷射光集光於前述特定之區域處；和光學元件，係用以對於前述至少1個的雷射光之在前述特定之區域處的光束(beam)剖面之光強度分布作修正。 A chamber device of one aspect of the present invention is a chamber device that is used with at least one laser device, and may be provided with a chamber that is configured to be useful from the foregoing At least one laser light output from at least one of the laser devices is introduced into at least one of the internal injection ports; and a target supply portion is provided in the chamber for use in a specific one of the chambers a target material to be supplied to the region; and a laser collecting optical system for collecting at least one of the aforementioned laser light at the specific region; and an optical element for the at least one of the aforementioned laser light The light intensity distribution of the beam profile at the aforementioned specific region is corrected.

本發明之其他觀點的極端紫外光產生裝置，係可具備有：至少1個的雷射裝置；和腔室，係被設置有用以將從前述至少1個的雷射裝置所輸出之至少1個的雷射光導入至內部的至少1個的射入口；和靶材供給部，係被設置在前述腔室內，並用以對於前述腔室內之特定的區域而供給靶材物質；和雷射集光光學系，係用以將前述至少1個的雷射光集光於前述特定之區域處；和光學元件，係用以對於前述至少1個的雷射光之在集光位置處的光束剖面之光強度分布作修正；和雷射控制部，係用以對於前述雷射裝置處之前述至少1個的雷射光之輸出時序作控制。 An extreme ultraviolet light generating device according to another aspect of the present invention may be provided with at least one laser device, and a chamber provided with at least one output from the at least one laser device Laser light is introduced into at least one of the internal injection ports; and a target supply portion is provided in the chamber for supplying a target substance to a specific region in the chamber; and laser collecting optics And a light element for illuminating a beam profile of the beam profile at the concentrating position of the at least one of the at least one of the at least one of the at least one of the laser light; And a laser control unit for controlling an output timing of the at least one of the laser light at the laser device.

本發明之又一其他觀點的極端紫外光產生裝置，係可具備有：至少1個的雷射裝置，係包含有以多橫向模態(multi-transverse mode)來振盪之主震盪器(master oscillator)；和腔室，係被設置有用以將從前述至少1個 的雷射裝置所輸出之至少1個的雷射光導入至內部的至少1個的射入口；和靶材供給部，係被設置在前述腔室內，並用以對於前述腔室內之特定的區域而供給靶材物質；和雷射集光光學系，係用以將前述至少1個的雷射光集光於前述特定之區域處；和雷射控制部，係用以對於前述雷射裝置處之前述至少1個的雷射光之輸出時序作控制。 An extreme ultraviolet light generating device according to still another aspect of the present invention may be provided with at least one laser device including a main oscillator that oscillates in a multi-transverse mode. And the chamber, is set to be useful to be at least 1 from the foregoing At least one of the laser light outputted by the laser device is introduced into at least one of the internal injection ports; and the target supply portion is provided in the chamber and is provided for a specific region in the chamber. a target material; and a laser collecting optical system for collecting at least one of the aforementioned laser light at the specific region; and a laser control portion for using at least the aforementioned laser device The output timing of one laser light is controlled.

〈內容〉 <content>

〈1.實施形態之背景〉 <1. Background of the embodiment>

〈2.實施形態之概要〉 <2. Outline of the embodiment>

〈3.具備有特定之均一性的區域之直徑〉 <3. Diameter of a region with specific uniformity>

〈4.光強度分布之例〉 <4. Example of light intensity distribution>

〈5.第1實施形態〉 <5. First embodiment>

〈6.修正光學元件之例〉 <6. Example of correcting optical components>

〈7.第2實施形態〉 <7. Second embodiment>

〈8.第3實施形態〉 <8. Third embodiment>

〈9.第4實施形態〉 <9. Fourth embodiment>

〈10.第5實施形態〉 <10. Fifth Embodiment>

〈11.第6實施形態〉 <11. Sixth embodiment>

〈12.第7實施形態〉 <12. Seventh Embodiment>

〈13.第8實施形態〉 <13. Eighth Embodiment>

〈14.預脈衝雷射光之照射條件〉 <14. Irradiation conditions of pre-pulse laser light>

〈15.第9實施形態〉 <15. Ninth Embodiment>

〈16.第10實施形態〉 <16. Tenth Embodiment>

〈17.第11實施形態〉 <17. Eleventh embodiment>

〈17-1.構成〉 <17-1. Composition>

〈17-2.動作〉 <17-2. Action>

〈18.通量之控制〉 <18. Control of flux>

〈19.延遲時間之控制〉 <19. Control of delay time>

以下，針對數個實施形態，作為單純之例子，而一面參考圖面一面作詳細說明。以下所說明之實施形態，係僅為對於本發明之數個例子作展示者，而並非為對於本發明之範圍作限定者。又，在以下之實施形態所說明的構成之全部內容，係並非絕對是作為本發明之構成所必要者。另外，對於相同之構成要素，係附加相同之參考符號，並省略重複之說明。 Hereinafter, a plurality of embodiments will be described in detail with reference to the drawings as a simple example. The embodiments described below are merely illustrative of the several examples of the invention, and are not intended to limit the scope of the invention. Further, the entire contents of the configurations described in the following embodiments are not absolutely essential to the configuration of the present invention. In addition, the same components are denoted by the same reference numerals, and the description thereof will not be repeated.

〈1.實施形態之背景〉 <1. Background of the embodiment>

圖1A~圖1C，係為對於本發明中之技術課題例作說明的圖。此技術課題例，係為相關於對身為1次靶材(primary target)之金屬液滴照射預脈衝雷射光而產生2次靶材(secondary target)，再對於此2次靶材照射主脈衝雷射光的方式中，所新發明的形態。 1A to 1C are diagrams for explaining an example of the technical problem in the present invention. An example of the technical problem is that a secondary target is generated by irradiating a pre-pulse laser light to a metal droplet that is a primary target, and then a primary pulse is irradiated to the secondary target. The form of the new invention in the way of laser light.

圖1A~圖1C，係針對對於靶材物質之液滴DL照射了預脈衝雷射光P的靶材物質之舉動的例子作展示。預脈衝雷射光P，係如圖1B中所示一般，以當液滴DL到達了圖中之與一點鍊線間之交點處的時序下，而朝向該交點進 行照射為理想。 1A to 1C are views showing an example of the behavior of the target substance irradiated with the pre-pulsed laser light P to the droplet DL of the target substance. The pre-pulse laser light P is generally as shown in FIG. 1B, and is directed toward the intersection when the droplet DL reaches the intersection at the intersection with the point chain in the figure. Irradiation is ideal.

雖然亦依存於液滴DL之直徑或者是預脈衝雷射光P之光強度等的條件，但是，若是對於液滴DL而照射預脈衝雷射光P，則能夠從被照射了預脈衝雷射光P之液滴DL之表面起而產生前置電漿(pre-plasma)。如圖1B中所示一般，前置電漿，係能夠朝向相對於預脈衝雷射光P之前進方向而略相反的方向來噴出。所謂前置電漿，係指在液滴DL之中，於預脈衝雷射光P之照射表面複數的部分處而成為了包含有離子(ion)或者是中性粒子的蒸氣者。亦將此產生有前置電漿之現象，稱作雷射剝蝕(laser ablation)。 Although depending on the diameter of the droplet DL or the light intensity of the pre-pulse laser light P, if the pre-pulse laser light P is irradiated to the droplet DL, the pre-pulse laser light P can be irradiated. The surface of the droplet DL acts to produce a pre-plasma. As shown in Fig. 1B, in general, the pre-plasma can be ejected in a direction slightly opposite to the advance direction of the pre-pulsed laser light P. The pre-plasma means a vapor containing ionic or neutral particles in a portion of the droplet DL at a plurality of irradiation surfaces of the pre-pulsed laser light P. This also produces the phenomenon of pre-plasma, called laser ablation.

又，若是對於液滴DL照射預脈衝雷射光P，則液滴DL會有被破壞的可能。如圖1B中所示一般，被破壞了的液滴，係經由由於前置電漿之噴出所導致的反作用力，而能夠朝向相對於預脈衝雷射光P之前進方向而略相同的方向來擴散。 Further, if the pre-pulse laser light P is irradiated to the droplet DL, the droplet DL may be destroyed. As shown in Fig. 1B, in general, the destroyed droplets can be diffused in a direction slightly opposite to the advance direction of the pre-pulsed laser light P by the reaction force due to the ejection of the pre-plasma. .

如此這般，以下，將包含有藉由對於液滴之預脈衝雷射光的照射所產生了的前置電漿以及被作了破壞的液滴中之至少其中一者的靶材，稱作擴散靶材。 In this manner, hereinafter, a target including at least one of a pre-plasma generated by irradiation of pre-pulsed laser light for a droplet and a damaged droplet is referred to as diffusion. Target.

在預脈衝雷射光P之照射時的液滴DL之位置，係為不安定，而可能會有如圖1A中所示一般之較與一點鍊線間之交點而更偏移至紙面上側處的情況，或者是如圖1C中所示一般之較與一點鍊線間之交點而更偏移至紙面下側處的情況等。在其中一個方法中，係亦可藉由將預脈衝雷 射光之光束直徑增大，來使預脈衝雷射光照射至液滴處。 The position of the droplet DL at the time of irradiation of the pre-pulse laser light P is unstable, and there may be a case where the point of the droplet DL is more shifted to the side of the paper as shown in FIG. 1A. Or, as shown in FIG. 1C, generally, the point of shifting to the lower side of the paper is more than the point of intersection with a little chain line. In one of the methods, the prepulse can also be The beam diameter of the outgoing light is increased to cause the pre-pulsed laser light to illuminate the droplet.

然而，從雷射裝置所輸出之雷射光的光強度分布，通常係成為在與光束軸相正交之剖面中的中央部處而光強度為高且隨著朝向周邊部而光強度變低的高斯分布。當將此種通常之雷射光作為預脈衝雷射光P而照射至液滴DL處的情況時，於上述之方法中，如圖1A以及圖1C中所示一般，會有液滴DL之中心成為位置在高斯分布之中心以外的部份處地而對於液滴DL照射預脈衝雷射光P的可能性。 However, the light intensity distribution of the laser light outputted from the laser device is generally at a central portion in a cross section orthogonal to the beam axis, and the light intensity is high and the light intensity becomes lower as it goes toward the peripheral portion. Gaussian distribution. When such normal laser light is irradiated to the droplet DL as the pre-pulse laser light P, in the above method, as shown in FIG. 1A and FIG. 1C, the center of the droplet DL becomes The possibility that the position is outside the center of the Gaussian distribution and the pre-pulsed laser light P is irradiated to the droplet DL.

當以在預脈衝雷射光P中之高斯(Gaussian)分布的中心以外之部分處而位置有液滴DL之中心的方式，來將預脈衝雷射光P作了照射的情況時，可能會有於液滴DL之照射表面中，在接近預脈衝雷射光P中之高斯分布之中心的部分處，而偏重賦予照射能量的情況。其結果，前置電漿，係可能會朝向與預脈衝雷射光P之光束軸方向相異的方向而噴出。又，上述之被破壞了的液滴，亦可能會經由由於前置電漿之噴出所導致的反作用力等，而朝向與預脈衝雷射光P之光束軸相異的方向來擴散。 When the pre-pulse laser light P is irradiated in such a manner that the center of the droplet DL is located at a portion other than the center of the Gaussian distribution in the pre-pulse laser light P, there may be a case where the pre-pulse laser light P is irradiated. Among the irradiated surfaces of the droplets DL, at a portion close to the center of the Gaussian distribution in the pre-pulsed laser light P, the biasing energy is given. As a result, the pre-plasma may be ejected in a direction different from the direction of the beam axis of the pre-pulsed laser light P. Further, the droplets which have been destroyed as described above may be diffused in a direction different from the beam axis of the pre-pulsed laser light P by a reaction force or the like due to ejection of the pre-plasma.

如此這般，藉由對於液滴之預脈衝雷射光的照射所產生之擴散靶材，係會相對於預脈衝雷射光照射時之預脈衝雷射光的光束軸，而依存於液滴之位置地來朝向相異之方向擴散。因此，係會有成為難以將主脈衝雷射光M安定地對於擴散靶材作照射的情況。 In this manner, the diffusion target generated by the irradiation of the pre-pulsed laser light of the droplet is dependent on the beam axis of the pre-pulsed laser light when the pre-pulsed laser light is irradiated, and depends on the position of the droplet. To spread in the direction of dissimilarity. Therefore, there is a case where it is difficult to irradiate the diffusion target with the main pulse laser light M stably.

〈2.實施形態之概要〉 <2. Outline of the embodiment>

圖2A~圖2C，係對於本發明中之將預脈衝雷射光照射至液滴處時的靶材物質之舉動的其中一例作展示。在圖2A~圖2C所示之情況中，與圖1A~圖1C中所示之情況相同的，在預脈衝雷射光P之照射時的液滴DL之位置，係為不安定(例如，圖2A、圖2C)。但是，在圖2A~圖2C所示之情況中，在與預脈衝雷射光P之光束軸相正交的剖面中，係存在著光強度分布為具備有特定之均一性的區域(直徑Dt)。 2A to 2C show an example of the behavior of the target material when the pre-pulsed laser light is irradiated to the droplet at the present invention. In the case shown in FIGS. 2A to 2C, as in the case shown in FIGS. 1A to 1C, the position of the droplet DL at the time of irradiation of the pre-pulse laser light P is unstable (for example, 2A, Figure 2C). However, in the case shown in FIGS. 2A to 2C, in the cross section orthogonal to the beam axis of the pre-pulse laser light P, there is a region in which the light intensity distribution has a specific uniformity (diameter Dt). .

不論在圖2A~圖2C所示之任一者的情況中，液滴DL均係位置在預脈衝雷射光P之光強度分布為具備有特定之均一性的區域(直徑Dt)中。因此，預脈衝雷射光P係能夠對於液滴DL之全體而以略均一之光強度來進行照射。故而，在預脈衝雷射光P對於液滴DL進行照射時，就算是液滴DL之位置有所偏移，亦能夠使靶材在沿著預脈衝雷射光P之光束軸的方向上而擴散。其結果，可以想見，係能夠將主脈衝雷射光M對於擴散靶材之全體作照射。 In the case of any of Figs. 2A to 2C, the droplet DL is located in a region (diameter Dt) having a specific uniformity in the light intensity distribution of the pre-pulsed laser light P. Therefore, the pre-pulse laser light P can be irradiated with a slightly uniform light intensity for the entire liquid droplet DL. Therefore, when the pre-pulse laser light P is irradiated to the droplet DL, even if the position of the droplet DL is shifted, the target can be diffused in the direction along the beam axis of the pre-pulse laser light P. As a result, it is conceivable that the main pulsed laser light M can be irradiated to the entire diffused target.

圖3A~圖3C，係對於本發明中之將預脈衝雷射光照射至液滴處時的靶材物質之舉動的其他例子作展示。在圖3A~圖3C所示之情況中，亦與在圖2A~圖2C中所示之情況相同的，在與預脈衝雷射光P之光束軸相正交的剖面中，係存在著光強度分布為具備有特定之均一性的區域(直徑Dt)。 3A to 3C show other examples of the behavior of the target material when the pre-pulsed laser light is irradiated to the droplet at the present invention. In the case shown in FIGS. 3A to 3C, also in the same manner as shown in FIGS. 2A to 2C, in the cross section orthogonal to the beam axis of the pre-pulse laser light P, there is a light intensity. The distribution is a region with a specific uniformity (diameter Dt).

在圖3A~圖3C所示之情況中，係與圖2A~圖2C中所示之情況相異，液滴DL係被破壞成粉狀，並能夠藉由作圓盤狀之擴散而成為擴散靶材。靶材物質之此種舉動，例如，係能夠在將液滴DL之直徑設為略塊體極限(mass limited)(約10μm)，並將預脈衝雷射光P之光強度調節成特定之強度的情況時，而得到之。 In the case shown in FIGS. 3A to 3C, unlike the case shown in FIGS. 2A to 2C, the droplet DL is broken into a powder and can be diffused by diffusion into a disk shape. Target. Such a behavior of the target substance can, for example, be such that the diameter of the droplet DL is set to a mass limited (about 10 μm ), and the light intensity of the pre-pulsed laser light P is adjusted to a specific one. In the case of strength, it is obtained.

在圖3A~圖3C所示之情況中，就算是在相對於預脈衝雷射光P之液滴DL的位置係為不安定的情況時(例如，圖3A、圖3C)，液滴DL亦係位置在預脈衝雷射光P之光強度分布為具備有特定之均一性的區域(直徑Dt)中。因此，預脈衝雷射光P係能夠對於液滴DL之全體而以略均一之光強度來進行照射。故而，預脈衝雷射光P，就算是液滴DL之位置有所偏移，亦能夠使靶材物質在沿著預脈衝雷射光P之光束軸的方向上而擴散。其結果，可以想見，係能夠將主脈衝雷射光M對於擴散靶材之全體作照射。 In the case shown in FIGS. 3A to 3C, even in the case where the position of the droplet DL with respect to the pre-pulse laser light P is unstable (for example, FIG. 3A, FIG. 3C), the droplet DL is also The light intensity distribution at the position of the pre-pulsed laser light P is in a region (diameter Dt) having a specific uniformity. Therefore, the pre-pulse laser light P can be irradiated with a slightly uniform light intensity for the entire liquid droplet DL. Therefore, the pre-pulse laser light P can diffuse the target material in the direction along the beam axis of the pre-pulse laser light P even if the position of the droplet DL is shifted. As a result, it is conceivable that the main pulsed laser light M can be irradiated to the entire diffused target.

〈3.具備有特定之均一性的區域之直徑〉 <3. Diameter of a region with specific uniformity>

接著，參考圖2A~圖2C以及圖3A~圖3C，針對在雷射光中之光強度分布為具備有特定之均一性的區域之直徑Dt作說明。 Next, referring to FIGS. 2A to 2C and FIGS. 3A to 3C, the diameter Dt of the region having the specific uniformity in the light intensity distribution in the laser light will be described.

當對於液滴DL照射預脈衝雷射光P時，為了使靶材朝向預脈衝雷射光P之光束軸方向擴散，係以使光束剖面中之光強度為具備有特定之均一性的部份對於液滴DL之 半球面全體作照射為理想。故而，當將液滴DL之直徑設為Dd時，在預脈衝雷射光P之光束剖面中而光強度分布為具備有特定之均一性的區域之直徑Dt，係以成為超過液滴DL之直徑Dd的大小為理想。 When the pre-pulsed laser light P is irradiated to the droplet DL, in order to diffuse the target toward the beam axis direction of the pre-pulsed laser light P, the light intensity in the beam profile is made to have a specific uniformity for the liquid. Drip DL It is ideal for the whole hemispherical illumination. Therefore, when the diameter of the droplet DL is Dd, the light intensity distribution in the beam profile of the pre-pulse laser light P is the diameter Dt of the region having the specific uniformity, so as to exceed the diameter of the droplet DL. The size of the Dd is ideal.

又，當對於照射預脈衝雷射光P時之液滴DL的位置之偏移作了考慮的情況時，係以對於所推測之偏移△X作考慮為理想。例如，在預脈衝雷射光P之光束剖面中的光強度分布為具備有特定之均一性的區域之直徑Dt，係以滿足下述之條件為理想。 Further, in consideration of the shift of the position of the droplet DL when the pre-pulse laser light P is irradiated, it is preferable to consider the estimated shift ΔX. For example, it is preferable that the light intensity distribution in the beam profile of the pre-pulse laser light P is the diameter Dt of the region having the specific uniformity to satisfy the following conditions.

Dt≧Dd+2△X Dt≧Dd+2△X

亦即是，在預脈衝雷射光P之光束剖面中而光強度分布為具備有特定之均一性的區域之直徑Dt，係以成為在液滴DL之直徑Dd上再加上了液滴DL之位置的偏移△X後之大小以上的大小為理想。於此，係作為從光束軸方向作觀察而對於上下以及左右之兩方向的偏移作了考慮者，而在液滴DL之直徑Dd上加上了2倍的△X。 That is, in the beam profile of the pre-pulse laser light P, the light intensity distribution is the diameter Dt of the region having the specific uniformity, so that the droplet DL is added to the diameter Dd of the droplet DL. It is desirable that the magnitude of the position after the offset ΔX is larger than the size. Here, as an observation from the direction of the beam axis, the shift in the up and down direction and the left and right directions is considered, and the diameter Dd of the droplet DL is doubled by ΔX.

圖4A以及圖4B，係為從光束之軸方向而對於本發明中之液滴直徑和光束直徑間的關係作觀察之圖。如圖4A中所示一般，在預脈衝雷射光P之光束剖面中而光強度分布為具備有特定之均一性的區域之直徑Dt，係以成為在液滴DL之直徑Dd上再加上了2倍之△X後之大小以上的大小為理想。 4A and 4B are views for observing the relationship between the droplet diameter and the beam diameter in the present invention from the axial direction of the light beam. As shown in FIG. 4A, in general, in the beam profile of the pre-pulse laser light P, the light intensity distribution is the diameter Dt of the region having the specific uniformity, and is added to the diameter Dd of the droplet DL. The size larger than the size of ΔX after 2 times is ideal.

接著，如圖4B中所示一般，較理想，係以能夠使主脈衝雷射光M對於擴散靶材之全體作照射的方式，而將主 脈衝雷射光M之光束直徑Dm，設為擴散靶材之直徑De以上的大小。 Next, as shown in FIG. 4B, it is preferable that the main pulsed laser light M can be irradiated to the entire diffused target, and the main The beam diameter Dm of the pulsed laser light M is set to be equal to or larger than the diameter De of the diffusion target.

進而，當在預脈衝雷射光P之光束剖面中存在有光強度分布為具備有特定之均一性之區域的情況時，針對擴散靶材之位置的偏差，可以得知以下的內容。擴散靶材，係能夠朝向預脈衝雷射光P之光束軸方向而擴散。故而，可以推測到，擴散靶材之位置的偏差，係並非起因於擴散靶材之擴散方向，而主要是起因於照射預脈衝雷射光P時所產生的液滴DL之位置的偏差△X者。故而，主脈衝雷射光M之光束直徑Dm，例如係以滿足以下之條件為理想。 Further, when there is a case where the light intensity distribution is a region having a specific uniformity in the beam profile of the pre-pulse laser light P, the following contents can be known for the deviation of the position of the diffusion target. The diffusion target can be diffused toward the beam axis direction of the pre-pulsed laser light P. Therefore, it can be inferred that the deviation of the position of the diffusion target is not caused by the diffusion direction of the diffusion target, but mainly due to the deviation ΔX of the position of the droplet DL generated when the pre-pulse laser light P is irradiated. . Therefore, the beam diameter Dm of the main pulse laser light M is ideal, for example, to satisfy the following conditions.

Dm≧De+2△X Dm≧De+2△X

亦即是，主脈衝雷射光M之光束直徑Dm，較理想，係成為在擴散靶材之直徑De上再加上了液滴DL之位置的偏差△X之後的大小以上之大小。於此，係作為從光束軸方向作觀察而對於上下以及左右之兩方向的偏移作了考慮者，而在擴散靶材之直徑De上加上了2倍的△X。 In other words, the beam diameter Dm of the main pulse laser light M is preferably equal to or larger than the size ΔX of the position of the droplet DL added to the diameter De of the diffusion target. Here, as an observation from the direction of the beam axis, the displacement in the up and down direction and the left and right directions is considered, and the diameter ΔX of the diffusion target is doubled.

圖5，係為針對本發明中之相關於液滴DL之位置的偏移之△X的值之設定例作展示之表。當將預脈衝雷射光P之光束軸和液滴DL之中心間的距離之標準差設為σ時，作為△X，可以考慮設定為例如σ、2σ、3σ、…。 Fig. 5 is a table showing a setting example of the value of ΔX of the offset of the position of the droplet DL in the present invention. When the standard deviation of the distance between the beam axis of the pre-pulsed laser light P and the center of the droplet DL is σ, it is conceivable that ΔX is set to, for example, σ, 2σ, 3σ, .

於此，若是假定預脈衝雷射光P之光束軸和液滴DL之中心間的距離係依循於常態分布，則在上述之Dt≧Dd+2△X的條件下，係能夠算出預脈衝雷射光P之光束剖面中的光強度分布為具備有特定之均一性的區域會被 照射於(或者是不會被照射於)液滴DL處之機率。 Here, if it is assumed that the distance between the beam axis of the pre-pulsed laser light P and the center of the droplet DL follows the normal distribution, the pre-pulse laser light can be calculated under the condition of Dt ≧ Dd + 2 ΔX described above. The light intensity distribution in the beam profile of P is such that a region with specific uniformity will be The probability of illuminating (or not being irradiated) on the droplet DL.

圖5之右欄，係為針對在預脈衝雷射光P之光束剖面中的光強度分布為具備有特定之均一性的區域並不會被照射至液滴DL處的機率作展示。如圖示一般，具備有特定之均一性的區域之並不會被照射至液滴DL處的機率，當△X=σ的情況時，係為15.9%，當△X=2σ的情況時，係為2.28%，當△X=3σ的情況時，係為0.135%。為了使EUV光之強度安定化，係以將△X設定為2σ以上之值為理想。 The right column of Fig. 5 shows the probability that the light intensity distribution in the beam profile of the pre-pulsed laser light P has a specific uniformity and is not irradiated to the droplet DL. As shown in the figure, the probability that a region having a specific uniformity is not irradiated to the droplet DL is obtained, and when ΔX = σ, it is 15.9%, and when ΔX = 2σ, The ratio is 2.28%, and when ΔX = 3σ, it is 0.135%. In order to stabilize the intensity of the EUV light, it is desirable to set ΔX to 2σ or more.

另外，雖係針對預脈衝雷射光P以及主脈衝雷射光M之光束剖面為圓形，且液滴DL以及擴散靶材之剖面(與雷射光之光束軸相正交的剖面)亦為圓形的情況，而作了說明，但是，本發明係並不被限定於此。例如，預脈衝雷射光之具備有特定之均一性之區域的面積，係亦可為超過液滴DL之剖面處的最大面積之大小。又，在預脈衝雷射光P之具備有特定之均一性的區域之尺寸的最小值，係亦可成為在液滴DL之剖面的尺寸之最大值上再加上了液滴DL之位置的偏移範圍後之值以上的大小。又，主脈衝雷射光M之光束剖面的面積，係亦可為超過在擴散靶材之剖面中的最大面積之大小。又，主脈衝雷射光M之光束剖面之尺寸的最小值，係亦可成為在擴散靶材之剖面的尺寸之最大值上再加上了擴散靶材之位置的偏移範圍後之值以上的大小。 Further, although the beam profile of the pre-pulse laser light P and the main pulse laser light M is circular, and the droplet DL and the cross section of the diffusion target (a section orthogonal to the beam axis of the laser beam) are also circular. The case has been described, but the present invention is not limited thereto. For example, the area of the pre-pulsed laser light having a region of specific uniformity may be the largest area beyond the section of the droplet DL. Further, the minimum value of the size of the region of the pre-pulse laser light P having the specific uniformity may be the offset of the position of the droplet DL at the maximum value of the cross-section of the droplet DL. The size above the value after shifting the range. Further, the area of the beam profile of the main pulsed laser light M may be larger than the largest area in the cross section of the diffusion target. Further, the minimum value of the beam profile of the main pulse laser light M may be equal to or larger than the value of the offset of the position of the diffusion target at the maximum value of the cross section of the diffusion target. size.

圖6，係為從光束軸方向而對於本發明中之液滴DL之位置的偏差方向和光束直徑間的關係作觀察之圖。如圖 6中所示一般，在與預脈衝雷射光P之光束軸相正交的方向上之液滴DL的位置之偏移，係亦可針對複數之方向作評價。在圖6中，係將從包含有預脈衝雷射光P之光束軸之面起的液滴DL之中心位置的X方向(紙面之橫方向)之偏移的最大值、和液滴DL之半徑，其兩者之和設為Xdmax，並將從包含有預脈衝雷射光之光束軸之面起的液滴DL之中心位置的Y方向(紙面之縱方向)之偏移的最大值、和液滴DL之半徑，其兩者之和設為Ydmax。而後，例如係對於X方向之偏移的最大值為較Y方向之偏移的最大值而更大之情況作展示(Xdmax>Ydmax)。 Fig. 6 is a view for observing the relationship between the deviation direction of the position of the droplet DL in the present invention and the beam diameter from the beam axis direction. As shown As shown in Fig. 6, in general, the offset of the position of the droplet DL in the direction orthogonal to the beam axis of the pre-pulsed laser light P can also be evaluated for the direction of the complex number. In Fig. 6, the maximum value of the shift in the X direction (the horizontal direction of the paper surface) from the center position of the liquid droplet DL from the surface of the beam axis including the pre-pulse laser light P, and the radius of the liquid droplet DL The sum of the two is set to Xdmax, and the maximum value of the offset in the Y direction (the longitudinal direction of the paper surface) from the center position of the liquid droplet DL from the surface of the beam axis including the pre-pulse laser light, and the liquid The radius of the droplet DL, the sum of the two is set to Ydmax. Then, for example, the case where the maximum value of the shift in the X direction is larger than the maximum value of the shift in the Y direction is shown (Xdmax>Ydmax).

於此種情況，例如，亦可將偏差為大之X方向作為基準，來決定預脈衝雷射光P之光束剖面的尺寸。例如，在預脈衝雷射光P之光束剖面中的光強度分布為具備有特定之均一性的區域，係亦可設為半徑FR為Xdmax以上之圓形。或者是，在預脈衝雷射光P之光束剖面中的光強度分布為具備有特定之均一性的區域，係亦可設為具備有在X方向上之尺寸(從光束軸之中心起直到具備有特定之均一性的區域之邊緣為止的長度)成為Xdmax以上之橢圓形或者是其他的形狀。又，考慮到在預脈衝雷射光P之光束剖面中的光強度分布為具備有特定之均一性的區域之尺寸上亦會有產生偏差TR的可能性，具備有特定之均一性的區域，係亦可設為具備有X方向上之尺寸成為(Xdmax+TR)以上之形狀。 In this case, for example, the size of the beam profile of the pre-pulse laser light P may be determined by using the X direction in which the deviation is large as a reference. For example, the light intensity distribution in the beam profile of the pre-pulse laser light P is a region having a specific uniformity, and may be a circle having a radius FR of Xdmax or more. Alternatively, the light intensity distribution in the beam profile of the pre-pulse laser light P is a region having a specific uniformity, and may be provided with a size in the X direction (from the center of the beam axis until there is The length of the edge of the region of the specific uniformity is an ellipse of Xdmax or more or another shape. Further, it is considered that the light intensity distribution in the beam profile of the pre-pulse laser light P is likely to have a deviation TR in the size of the region having the specific uniformity, and the region having the specific uniformity is It is also possible to have a shape having a size in the X direction of (Xdmax+TR) or more.

又，亦可因應於液滴DL之位置的偏差，來對於預脈 衝雷射光P之光束直徑作變更。若是在將預脈衝雷射光P之光能量維持於一定的狀態下來對於光束直徑作變更，則預脈衝雷射光P之照射面處的光強度(每單位面積之光能量)，係會與光束直徑之平方成反比地而改變。故而，為了使光強度成為一定，亦可對於光能量作調整。又，例如，係可將預脈衝雷射光P之在光束剖面中而光強度具備有特定之均一性的區域之形狀(光束之剖面形狀)，以成為X方向之尺寸為(Xdmax+TR)而Y方向之尺寸為(Ydmax+TR)之橢圓形狀的方式，來進行調整。針對主脈衝雷射光M，亦同樣的，例如可因應於擴散靶材之X方向的偏差和Y方向的偏差，來對於光束剖面之尺寸或形狀作調整。 In addition, it is also possible to respond to the deviation of the position of the droplet DL. The beam diameter of the laser beam P is changed. If the beam diameter is changed while maintaining the light energy of the pre-pulse laser light P at a constant state, the light intensity (light energy per unit area) at the irradiation surface of the pre-pulse laser light P is the same as the beam diameter. The square is inversely proportional to the change. Therefore, in order to make the light intensity constant, it is also possible to adjust the light energy. Further, for example, the shape of the region in which the pre-pulse laser light P is in the beam profile and the light intensity has a specific uniformity (the cross-sectional shape of the light beam) can be set such that the dimension in the X direction is (Xdmax+TR). The adjustment is made in such a manner that the size of the Y direction is an elliptical shape of (Ydmax+TR). Similarly, for the main pulsed laser light M, for example, the size or shape of the beam profile can be adjusted in accordance with the deviation of the X-direction of the diffusion target and the deviation in the Y direction.

〈4.光強度分布之例〉 <4. Example of light intensity distribution>

圖7A~圖7C，係為用以對於本發明中之預脈衝雷射光的光強度分布之例作說明的圖。如圖7A中所示一般，預脈衝雷射光P，當在光束剖面之全範圍中而具備有略均一之光強度的情況時，該預脈衝雷射光P之光強度分布，係為略均一之高帽(top hat)型，而可以說係具備有均一性。 7A to 7C are diagrams for explaining an example of the light intensity distribution of the pre-pulse laser light in the present invention. As shown in FIG. 7A, in general, when the pre-pulsed laser light P has a slightly uniform light intensity in the entire range of the beam profile, the light intensity distribution of the pre-pulse laser light P is slightly uniform. The top hat type can be said to have uniformity.

又，如圖7B中所示一般，就算是預脈衝雷射光P為在光束直徑方向之端部附近處而具備有光強度逐漸減少之區域，當在被該端部所包圍之中央部附近而具備有略均一之光強度的情況時，亦可以說係包含著具備有均一性之區 域。 Further, as shown in Fig. 7B, even if the pre-pulse laser light P is in the vicinity of the end portion in the beam diameter direction, it is provided with a region where the light intensity is gradually decreased, and is near the center portion surrounded by the end portion. When there is a slightly uniform light intensity, it can be said that it contains a zone with uniformity. area.

又，如圖7C中所示一般，就算是預脈衝雷射光P為在光束直徑方向之端部附近處而具備有光強度為高之區域，當在被該端部所包圍之中央部附近而具備有略均一之光強度的情況時，亦可以說係包含著具備有均一性之區域。 Further, as shown in Fig. 7C, even if the pre-pulse laser light P is in the vicinity of the end portion in the beam diameter direction, it has a region where the light intensity is high, and is near the center portion surrounded by the end portion. When there is a case where there is a slightly uniform light intensity, it can be said that it includes an area having uniformity.

在對於液滴DL而照射預脈衝雷射光P時，為了使靶材在預脈衝雷射光P之光束軸方向上擴散，較理想，係如圖7A~圖7C中所示一般，使預脈衝雷射光P包含著具備有略均一之光強度的區域。但是，如以下所說明一般，雷射光之光強度分布，就算並非為完全均一，只要是在與光束軸相正交之剖面內的一定之區域中為具備有特定之均一性即可。 When the pre-pulse laser light P is irradiated to the droplet DL, in order to diffuse the target in the beam axis direction of the pre-pulse laser light P, it is preferable to make the pre-pulse mine as shown in FIGS. 7A to 7C. The light P contains an area having a slightly uniform light intensity. However, as described below, the light intensity distribution of the laser light is not completely uniform, as long as it has specific uniformity in a certain region in the cross section orthogonal to the beam axis.

圖8，係為用以針對被照射至靶材物質處的雷射光之光強度分布作說明的圖。如圖8中所示一般，當在雷射光之與光束軸相正交之剖面內的一定之區域(直徑Dt)中的最高之光強度之值Imax和在該區域中的最低之光強度之值Imin，其兩者之差過大的情況時，係並不能說是具備有特定之均一性。要想被視為具備有特定之均一性，例如，較理想，以下所示之偏差C的值，係為20(%)以下。 Figure 8 is a diagram for explaining the light intensity distribution of the laser light irradiated to the target material. As shown in Fig. 8, in general, the value of the highest light intensity Imax in a certain region (diameter Dt) in the cross section perpendicular to the beam axis of the laser light and the lowest light intensity in the region The value Imin, when the difference between the two is too large, does not mean that there is a specific uniformity. In order to be considered to have specific uniformity, for example, it is preferable that the value of the deviation C shown below is 20 (%) or less.

C={(Imax-Imin)/(Imax+Imin)}×100(%) C={(Imax-Imin)/(Imax+Imin)}×100(%)

更理想，上述之偏差C的值，係為10(%)以下。 More preferably, the value of the above-described deviation C is 10 (%) or less.

又，當雷射光之光束剖面中的光強度分布，為在上述具備有特定之均一性的區域內而存在有複數之峰值(peak)P1~P6的情況時，較理想，峰值間之間隔△P，係為液 滴DL之直徑Dd的一半以下。 Further, when the light intensity distribution in the beam profile of the laser beam is such that a plurality of peaks P1 to P6 exist in the region having the specific uniformity described above, it is preferable that the interval between the peaks is Δ. P, is a liquid The diameter of the drop DL is less than half of the diameter Dd.

〈5.第1實施形態〉 <5. First embodiment>

圖9，係對於第1實施型態的EUV光產生裝置之構成作概略性展示。在第1實施型態之EUV光產生裝置中，係採用經由對於靶材物質而照射雷射光並激勵靶材物質，來產生EUV光的LPP方式。如圖9中所示一般，EUV光產生裝置20，係亦可具備有腔室1、和靶材供給部2、和預脈衝雷射裝置3、和主脈衝雷射裝置4、以及EUV集光鏡(mirror)5。於此，預脈衝雷射裝置3以及主脈衝雷射裝置4，係構成雷射光產生機構。 Fig. 9 is a schematic view showing the configuration of an EUV light generating device of the first embodiment. In the EUV light generating device of the first embodiment, an LPP method in which EUV light is generated by irradiating laser light to a target material and exciting the target material is employed. As shown in FIG. 9, generally, the EUV light generating device 20 may be provided with a chamber 1, a target supply portion 2, a pre-pulse laser device 3, a main pulse laser device 4, and an EUV light collecting device. Mirror (mirror) 5. Here, the pre-pulse laser device 3 and the main pulse laser device 4 constitute a laser light generating mechanism.

腔室1，係可為在內部而進行EUV光之產生的真空腔。在腔室1中，係亦可設置曝光裝置連接埠11和窗12。亦可設為經由曝光裝置連接埠11來將在腔室1內所產生的EUV光輸出至外部之曝光裝置(縮小投影反射光學系)處。亦可透過窗12，來使從預脈衝雷射裝置3以及主脈衝雷射裝置4所輸出之雷射光射入至腔室1內。 The chamber 1 may be a vacuum chamber that internally generates EUV light. In the chamber 1, an exposure device port 11 and a window 12 may also be provided. It is also possible to provide an exposure device (reduced projection reflection optical system) that outputs EUV light generated in the chamber 1 to the outside via the exposure device connection port 11 . The laser light output from the pre-pulse laser device 3 and the main pulse laser device 4 can also be incident into the chamber 1 through the window 12.

靶材供給部2，係可為用以將為了產生EUV光所使用的錫(Sn)或鋰(Li)等之靶材物質供給至腔室1內之裝置。靶材物質，係可為透過靶材噴嘴13所噴出之球狀的液滴DL。液滴DL，例如係亦可具備有10μm以上100μm以下之直徑。在被供給至腔室1內之複數的液滴DL中之並未被照射雷射光者，係亦可被回收至靶材回收部14處。 The target supply unit 2 may be a device for supplying a target substance such as tin (Sn) or lithium (Li) used for generating EUV light into the chamber 1. The target substance may be a spherical droplet DL that is ejected through the target nozzle 13 . The droplet DL may have a diameter of, for example, 10 μm or more and 100 μm or less. Any one of the plurality of droplets DL supplied into the chamber 1 that is not irradiated with the laser light may be recovered to the target recovery portion 14.

預脈衝雷射裝置3以及主脈衝雷射裝置4，係可為將為了激勵靶材物質所使用的驅動用之雷射光作輸出的振盪放大型雷射裝置。從預脈衝雷射裝置3以及主脈衝雷射裝置4所輸出的雷射光，係可為具備有高反覆頻率(例如，脈衝(pulse)時間寬幅為數ns~數十ns程度，反覆頻率為10kHz~100kHz程度)的脈衝雷射光。亦可設為：預脈衝雷射裝置3，係輸出預脈衝雷射光P，主脈衝雷射裝置4，係輸出主脈衝雷射光M。作為預脈衝雷射光3，例如係可使用YAG(Yttrium Aluminum Garnet)雷射裝置，作為主脈衝雷射裝置4，例如係可使用CO2雷射裝置，但是，係並不被限定於此，亦可使用其他雷射裝置。 The pre-pulse laser device 3 and the main pulse laser device 4 may be an oscillation amplification type laser device that outputs laser light for driving used to excite the target material. The laser light output from the pre-pulse laser device 3 and the main pulse laser device 4 may have a high repetition frequency (for example, a pulse time width of several ns to several tens of ns, and a repetition frequency of 10 kHz) Pulsed laser light of ~100 kHz). It can also be set as follows: the pre-pulse laser device 3 outputs the pre-pulse laser light P, and the main pulse laser device 4 outputs the main pulse laser light M. As the pre-pulse laser light 3, for example, a YAG (Yttrium Aluminum Garnet) laser device can be used as the main pulse laser device 4, for example, a CO 2 laser device can be used, but it is not limited thereto. Other laser devices can be used.

從預脈衝雷射裝置3所輸出之預脈衝雷射光P，係亦可成為：透過包含有光束集聚器15a、離軸拋物面鏡15b等之雷射集光光學系、窗12、被形成在EUV集光鏡5之中央部處的貫通孔21a等，來集光在被供給至腔室1內的液滴DL上。 The pre-pulse laser light P outputted from the pre-pulse laser device 3 may be a laser light collecting optical system including a beam aggregator 15a, an off-axis parabolic mirror 15b, and the like, and a window 12 formed in the EUV. The through holes 21a and the like at the central portion of the collecting mirror 5 collect light on the droplets DL supplied into the chamber 1.

另一方面，從主脈衝雷射裝置4所輸出之預脈衝雷射光M，係亦可成為：透過包含有光束集聚器(beam combiner)15a、離軸拋物面鏡15b等之雷射集光光學系、窗12、貫通孔21a等，來集光在於腔室1內所產生的擴散靶材上。 On the other hand, the pre-pulse laser light M output from the main pulse laser device 4 may be a laser light collecting optical system including a beam combiner 15a and an off-axis parabolic mirror 15b. The window 12, the through hole 21a, and the like collect light on the diffusion target generated in the chamber 1.

若是預脈衝雷射光P被照射至液滴DL處，則液滴DL係擴散，而能夠產生擴散靶材(例如，圖2A~圖2C中所示一般之前置電漿，或者是圖2A~圖2C以及圖3A~圖 3C中所示一般之被破壞了的液滴)。 If the pre-pulse laser light P is irradiated to the droplet DL, the droplet DL is diffused, and a diffusion target can be generated (for example, the general pre-plasma shown in FIGS. 2A to 2C, or FIG. 2A~) Figure 2C and Figure 3A~ The generally broken droplets shown in 3C).

主脈衝雷射光M，係亦可設為對於經由對液滴DL照射預脈衝雷射光P所形成的擴散靶材作照射。若是經由主脈衝雷射光M之能量而使擴散靶材被激勵並電漿化，則係能夠從該處而輻射出包含有EUV光之各種波長的光。 The main pulsed laser light M may be set to illuminate the diffusion target formed by irradiating the pre-pulsed laser light P to the droplet DL. If the diffusion target is excited and plasmad by the energy of the main pulsed laser light M, light of various wavelengths including EUV light can be radiated therefrom.

EUV集光鏡5，係為將從電漿所輻射出之各種波長的光中之特定波長(例如，具備有13.5nm附近之波長的EUV光)的光作集光反射之光學系。EUV集光鏡5，例如，係可為具備著被形成有將波長13.5nm附近之EUV光作選擇性反射的鉬(Mo)/矽(Si)多層膜之旋轉橢圓面的凹面狀反射面之鏡。EUV集光鏡5，係亦能夠以使旋轉橢圓面之第1焦點位置在電漿產生區域PS處的方式來作配置，被EUV集光鏡5所反射之EUV光，係亦可被集光於旋轉橢圓面之第2焦點(亦即是中間集光點(IF))並被輸出至外部之曝光裝置處。 The EUV collecting mirror 5 is an optical system that collects and reflects light of a specific wavelength (for example, EUV light having a wavelength of around 13.5 nm) among light of various wavelengths radiated from the plasma. The EUV collecting mirror 5 may be, for example, a concave reflecting surface having a rotating elliptical surface formed of a molybdenum (Mo)/germanium (Si) multilayer film selectively reflecting EUV light having a wavelength of 13.5 nm. mirror. The EUV collecting mirror 5 can also be arranged such that the first focus position of the ellipsoidal surface is at the plasma generating region PS, and the EUV light reflected by the EUV collecting mirror 5 can also be collected. The second focus of the rotating elliptical surface (that is, the intermediate light collecting point (IF)) is output to the external exposure device.

在第1實施型態中，從預脈衝雷射裝置3所輸出之預脈衝雷射光P、和從主脈衝雷射裝置4所輸出之主脈衝雷射光M，係亦可經由光束集聚器15a來使該些之前進方向成為略一致並供給至腔室1內。 In the first embodiment, the pre-pulse laser light P output from the pre-pulse laser device 3 and the main pulse laser light M output from the main pulse laser device 4 may also be via the beam aggregator 15a. These advance directions are made slightly uniform and supplied into the chamber 1.

預脈衝雷射裝置3，係亦能夠以第1特定波長來輸出預脈衝雷射光P。預脈衝雷射光P，係亦可在藉由光束擴展器(beam expander)30來將光束直徑作了擴大之後，再射入至修正光學元件31處。 The pre-pulse laser device 3 is also capable of outputting the pre-pulse laser light P at the first specific wavelength. The pre-pulse laser light P may be enlarged by a beam expander 30 and then incident on the correcting optical element 31.

修正光學元件31，係可為用以對於被照射至液滴DL 處之預脈衝雷射光P的光強度分布作修正之元件。修正光學元件31，係亦能夠以使在對於液滴DL之照射位置處的預脈衝雷射光P之光束剖面處而包含有光強度分布為具備特定之均一性的區域，並且該具備有特定之均一性的區域之直徑Dt會成為超過液滴DL之直徑Dd之大小的方式，來對於預脈衝雷射光P之光強度分布作修正。從修正光學元件31所輸出之預脈衝雷射光P，係亦可射入至光束集聚器15a中。 The correcting optical element 31 can be used to be irradiated to the droplet DL The light intensity distribution of the pre-pulsed laser light P is used as a correction component. The correction optical element 31 can also include a region having a specific uniformity of light intensity distribution at a beam profile of the pre-pulse laser light P at the irradiation position of the droplet DL, and the specificity is provided. The diameter Dt of the uniform region becomes a larger than the diameter Dd of the droplet DL, and the light intensity distribution of the pre-pulsed laser light P is corrected. The pre-pulse laser light P outputted from the correction optical element 31 can also be incident on the beam aggregator 15a.

主脈衝雷射裝置4，係亦可構成為：具備有主振盪器4a、和前放大器(preamplifier)4c、和主放大器(main amplifier)4e，並在該些之下游側處，分別被配置有中繼(relay)光學系4b、4d、4f。主振盪器4a，係亦能夠以第2特定波長來輸出種源光。從主振盪器4a所輸出之種源光，係亦可經由前放大器4c以及主放大器4e而被放大為所期望之光強度，並作為主脈衝雷射光M來射入至光束集聚器15a中。 The main pulse laser device 4 may be configured to include a main oscillator 4a, a preamplifier 4c, and a main amplifier 4e, and at the downstream sides thereof, respectively The optical systems 4b, 4d, 4f are relayed. The main oscillator 4a is also capable of outputting seed light at a second specific wavelength. The seed light output from the main oscillator 4a can also be amplified to a desired light intensity via the preamplifier 4c and the main amplifier 4e, and can be incident on the beam aggregator 15a as the main pulsed laser light M.

光束集聚器15a，係可為使在從預脈衝雷射裝置3所輸出之預脈衝雷射光P中所包含之具有第1特定波長的雷射光以高透過率來透過並將從主脈衝雷射裝置4所輸出之主脈衝雷射光M中所包含之具有第2特定波長的雷射光以高反射率來反射之光學元件。光束集聚器15a，係亦能夠以使所透過之預脈衝雷射光P和所反射之主脈衝雷射光M的前進方向成為略一致的方式，來對於此些之雷射光的前進方向作控制並供給至腔室1內。於此，雷射集聚器15a ，例如，係可為使波長1.06μm之預脈衝雷射光P以高透過率而透過並使波長10.6μm之主脈衝雷射光M以高反射率而反射的光學元件。具體而言，光束集聚器15a，係可為在鑽石基板上而鍍敷了具備有上述一般之反射透過特性的多層膜之光學元件。或者是，雷射集聚器15a，係亦可為將預脈衝雷射光P以高反射率而反射並使主脈衝雷射光M以高透過率而透過之光學元件。於此情況，係亦可將預脈衝雷射裝置3之位置和主脈衝雷射裝置4之位置相互交換地作配置。 The beam aggregator 15a is configured to transmit the laser light having the first specific wavelength included in the pre-pulse laser light P outputted from the pre-pulse laser device 3 at a high transmittance and to emit laser light from the main pulse. The optical element having the second specific wavelength included in the main pulse laser light M output from the device 4 is reflected at a high reflectance. The beam aggregator 15a can also control and supply the forward direction of the laser light such that the forward direction of the transmitted pre-pulse laser light P and the reflected main pulse laser light M are slightly coincident. Inside the chamber 1. Here, the laser agglomerator 15a For example, it may be an optical element that transmits pre-pulsed laser light P having a wavelength of 1.06 μm at a high transmittance and reflects the main pulsed laser light M having a wavelength of 10.6 μm at a high reflectance. Specifically, the beam aggregator 15a may be an optical element in which a multilayer film having the above-described general reflection transmission characteristics is plated on a diamond substrate. Alternatively, the laser agglomerator 15a may be an optical element that reflects the pre-pulsed laser light P at a high reflectance and transmits the main pulsed laser light M at a high transmittance. In this case, the position of the pre-pulse laser device 3 and the position of the main pulse laser device 4 may be interchangeably arranged.

若依據第1實施型態，則係亦能夠構成為：使預脈衝雷射光P之光束剖面處會存在有光強度分布為具備特定之均一性的區域，並且該具備有特定之均一性的區域之直徑Dt會成為超過液滴DL之直徑Dd之大小。藉由此，可以推測到，起因於液滴DL之位置的偏差所導致的擴散靶材之位置的偏差係被減低，而能夠改善所產生的EUV光之能量和光學性能之安定性。 According to the first embodiment, the light beam intensity distribution of the pre-pulse laser light P may have a specific uniformity, and the region having specific uniformity may be formed. The diameter Dt becomes larger than the diameter Dd of the droplet DL. From this, it can be inferred that the variation in the position of the diffusion target due to the deviation of the position of the droplet DL is reduced, and the stability of the energy and optical performance of the generated EUV light can be improved.

又，若依據第1實施型態，則係能夠將預脈衝雷射光P和主脈衝雷射光M以略同軸來對於電漿產生區域PS作照射。因此，係能夠將被形成在EUV集光鏡5處之雷射光導入用的貫通孔之數量減少。 Further, according to the first embodiment, the pre-pulse laser light P and the main pulse laser light M can be irradiated to the plasma generation region PS with a slight coaxiality. Therefore, the number of through holes for introducing the laser light formed at the EUV collecting mirror 5 can be reduced.

在第1實施型態中，雖係針對包含有預脈衝雷射裝置3以及主脈衝雷射裝置4之EUV光產生裝置20而作了說明，但是，本發明係並不被限定於此。例如，在將預脈衝雷射裝置3以及主脈衝雷射裝置4等之激勵能量源相互獨 立地來構成，並藉由從此些之雷射裝置等來導入激勵能量，而激勵被供給至腔室內之靶材物質而產生EUV光的裝置中，係亦可適用本發明之實施型態。如此這般，在本案發明中，係有將此種把預脈衝雷射裝置3以及主脈衝雷射裝置4等作為外部裝置來作組合並用以產生EUV光的裝置，稱為「EUV光產生系統」的情形。 In the first embodiment, the EUV light generating device 20 including the pre-pulse laser device 3 and the main pulse laser device 4 has been described. However, the present invention is not limited thereto. For example, in the excitation energy source such as the pre-pulse laser device 3 and the main pulse laser device 4, The embodiment of the present invention can also be applied to a device that generates the EUV light by introducing the excitation energy from the laser device or the like and exciting the target material supplied to the chamber to generate EUV light. In this way, in the invention of the present invention, such a device that combines the pre-pulse laser device 3 and the main pulse laser device 4 as an external device and generates EUV light is called an "EUV light generating system." The situation.

〈6.修正光學元件之例〉 <6. Example of correcting optical components>

圖10，係為對相關於修正光學元件之其中一例作展示的概念圖。圖10中所示之修正光學元件，係亦可包含有繞射光學元件31a。繞射光學元件31a，例如，係亦可經由被形成有用以使射入光作繞射之微小的凹凸之透明板來構成之。繞射光學元件31a之凹凸圖案，係亦能夠以在將繞射光經由集光光學系而作集光的情況時在集光點處而將光強度分布均一化的方式，來作設計。從繞射光學元件31a所輸出之繞射光，係亦可使用集光光學系15(圖9中所示之離軸拋物面鏡15b等)來作集光。藉由此，係能夠將具備有高帽型之光強度分布的預脈衝雷射光P對於液滴DL作照射。 Fig. 10 is a conceptual diagram showing an example of a correction optical element. The correcting optical element shown in Fig. 10 may also include a diffractive optical element 31a. The diffractive optical element 31a may be formed, for example, by a transparent plate formed with minute irregularities for diffracting the incident light. The concave-convex pattern of the diffractive optical element 31a can also be designed to uniformize the light intensity distribution at the light collecting point when the diffracted light is collected by the collecting optical system. The diffracted light output from the diffractive optical element 31a can also be collected by using the collecting optics 15 (off-axis parabolic mirror 15b shown in Fig. 9). Thereby, the pre-pulsed laser light P having the high-hat type light intensity distribution can be irradiated to the droplet DL.

圖11，係為對相關於修正光學元件之其他例子作展示的概念圖。圖11中所示之修正光學元件，係亦可包含有相位橫移(shift)光學系31b。相位橫移光學系31b，例如，係亦可經由將中央部設為較周邊部而厚度更厚之透明板來構成之。相位橫移光學系31b，係亦可對於透過中央 部之光和透過周邊部之光之間，而賦予相位差π。藉由此，係能夠將光強度分布為高斯分布之射入光，變換成具備有近似於艾瑞(Airy)函數之電場強度分布的光，並從相位橫移光學系31b而輸出。 Figure 11 is a conceptual diagram showing other examples related to correcting optical elements. The correcting optical element shown in Fig. 11 may also include a phase shifting optical system 31b. The phase traverse optical system 31b may be configured, for example, by a transparent plate having a central portion which is thicker than the peripheral portion. The phase traverse optical system 31b can also provide a phase difference π between the light transmitted through the central portion and the light transmitted through the peripheral portion. Thereby, the light having the light intensity distribution as a Gaussian distribution can be converted into light having an electric field intensity distribution similar to the Airy function, and outputted from the phase traverse optical system 31b.

並且，例如，係亦能夠以使集光光學系15之後焦點的位置成為與液滴DL之通過路徑上的某一點相一致的方式，來配置該集光光學系15，並在該集光光學系15之前焦點的位置處，配置相位橫移光學系31b。藉由此，係能夠將具備有將艾瑞函數作了傅立葉變換之高帽型的光強度分布之預脈衝雷射光P對於液滴DL作照射。於此，雖係針對使用了透過型之相位橫移光學系31b的例子來作了說明，但是，係並不被限定於此，亦可使用反射型之相位橫移光學系。 Further, for example, the light collecting optical system 15 can be disposed such that the position of the focus after the collecting optical system 15 coincides with a certain point on the path of the liquid droplet DL, and the collecting optical system At the position of the focus before the system 15, the phase traverse optical system 31b is disposed. Thereby, the pre-pulse laser light P having the high-hat type light intensity distribution in which the Fourier transform is Fourier-transformed can be irradiated to the droplet DL. Here, although an example in which the transmissive phase traverse optical system 31b is used has been described, the present invention is not limited thereto, and a reflective phase traverse optical system may be used.

圖12，係為對相關於修正光學元件之又一其他例子作展示的概念圖。圖12中所示之修正光學元件，係亦可包含有具備特定形狀之開口的遮罩32。亦可藉由遮罩32、和準直透鏡(collimator lens)33、以及集光光學系15，來構成縮小投影光學系31c。遮罩(mask)32，係能夠僅使所射入之預脈衝雷射光P的光強度分布為具備有特定之均一性的區域之光透過。縮小投影光學系31c，係亦可將在遮罩32部分處之像經由準直透鏡33和集光光學系15來縮小投影至液滴DL上並作結像。藉由此，係能夠將具備有高帽型之光強度分布的預脈衝雷射光P對於液滴DL作照射。 Figure 12 is a conceptual diagram showing still another example of a modified optical element. The correcting optical element shown in Fig. 12 may also include a mask 32 having an opening of a specific shape. The reduced projection optical system 31c can also be configured by the mask 32, the collimator lens 33, and the collecting optical system 15. The mask 32 is capable of transmitting only the light intensity distribution of the pre-pulsed laser light P that is incident into a region having a specific uniformity. By reducing the projection optical system 31c, the image at the portion of the mask 32 can be reduced and projected onto the droplet DL via the collimator lens 33 and the collecting optical system 15 to form a junction image. Thereby, the pre-pulsed laser light P having the high-hat type light intensity distribution can be irradiated to the droplet DL.

圖13，係為對相關於修正光學元件之又一其他例子作展示的概念圖。圖13中所示之修正光學元件，係亦可包含有將多數之凹透鏡作了配列的蠅眼透鏡(fly-eye lens)34。亦可藉由蠅眼透鏡34和集光光學系15，來構成科勒照明光學系31d。在科勒(Köhler)照明光學系31d中，係能夠將射入光經由蠅眼透鏡34之各個的凹透鏡來分別以特定之角度來作擴廣，並將該光在集光光學系15之焦點位置處作重合。其結果，係能夠在集光光學系15之焦點位置處，而使雷射光之光強度分布略均一化。藉由此，係能夠將具備有高帽型之光強度分布的預脈衝雷射光P對於液滴DL作照射。於此，雖係針對使用了透過型之蠅眼透鏡34的例子來作了說明，但是，係並不被限定於此，亦可使用反射型之蠅眼透鏡。又，蠅眼透鏡，係亦可為將多數之凸透鏡作了配列者，亦可為藉由微小之透鏡所構成的微(micro)蠅眼透鏡。 Figure 13 is a conceptual diagram showing still another example of a modified optical element. The correcting optical element shown in Fig. 13 may also include a fly-eye lens 34 in which a plurality of concave lenses are arranged. The Kohler illumination optical system 31d can also be constructed by the fly-eye lens 34 and the collecting optical system 15. In the Köhler illumination optical system 31d, the incident light can be expanded at a specific angle by a concave lens of each of the fly-eye lenses 34, and the light is focused at the focus of the collecting optical system 15. The work is coincident. As a result, the light intensity distribution of the laser light can be made slightly uniform at the focus position of the collecting optical system 15. Thereby, the pre-pulsed laser light P having the high-hat type light intensity distribution can be irradiated to the droplet DL. Here, although the example in which the transmissive fly-eye lens 34 is used has been described, the present invention is not limited thereto, and a reflective fly-eye lens may be used. Further, the fly-eye lens may be a micro-eye contact lens formed by a plurality of convex lenses, or may be a micro fly eye lens.

於圖10~圖13中，雖係針對將用以把預脈衝雷射光P集光於液滴DL上的集光光學系和用以對於雷射光之光強度分布作修正的修正光學元件作了組合的情況而作展示，但是，亦能夠以藉由1個的元件來達成此些之功能的方式而構成之。例如，亦可在集光透鏡處而使用如同繞射光學元件一般之被形成有凹凸的光學元件，或者是在集光鏡處而使用具備有相位橫移之功能的光學元件。 10 to 13, although the concentrating optical system for collecting the pre-pulsed laser light P on the droplet DL and the correcting optical element for correcting the light intensity distribution of the laser light are used. It is shown in the case of combination, but it can also be constructed by means of one element to achieve such functions. For example, an optical element in which irregularities are formed as in a diffractive optical element may be used at the collecting lens, or an optical element having a function of phase traverse may be used at the collecting mirror.

圖14，係為對相關於修正光學元件之又一其他例子作展示的概念圖。圖14中所示之修正光學元件，係亦可包 含有多模光纖31e。又，在預脈衝雷射裝置3和多模光纖31e之間的光路中，係亦可代替光束擴展器330(參考圖9)，而配置集光光學系30g。 Figure 14 is a conceptual diagram showing still another example of a modified optical element. The correcting optical element shown in Figure 14 can also be packaged It contains a multimode fiber 31e. Further, in the optical path between the pre-pulse laser device 3 and the multimode fiber 31e, the light collecting optical system 30g may be disposed instead of the beam expander 330 (refer to FIG. 9).

從預脈衝雷射裝置3所輸出之預脈衝雷射光P，係可經由集光光學系30g而被集光並射入至多模(multimode)光纖31e中。此時，較理想，係以配合於多模光纖31e之開口數來使預脈衝雷射光P被作集光的方式，來構成之。一般而言，在身為相較於單模(single mode)光纖而芯(core)直徑為更大之光纖的多模光纖31e中，係可能存在有多數之將光作傳播的路徑。因此，當光強度分布為高斯分布之雷射光通過多模光纖31e時，光強度分布會改變，並能夠成為具備有高帽型之光強度分布的雷射光。集光光學系15g，係亦可將從多模光纖31e所輸出之預脈衝雷射光P縮小投影至液滴DL上並作結像。藉由此，係能夠將具備有高帽型之光強度分布的預脈衝雷射光P對於液滴DL作照射。 The pre-pulse laser light P output from the pre-pulse laser device 3 can be collected by the collecting optical system 30g and injected into the multimode optical fiber 31e. In this case, it is preferable to form the pre-pulse laser light P to be collected by the number of openings of the multimode fiber 31e. In general, in the multimode fiber 31e which is an optical fiber having a larger core diameter than a single mode fiber, there may be a plurality of paths for propagating light. Therefore, when the laser light having the Gaussian distribution of the light intensity distribution passes through the multimode optical fiber 31e, the light intensity distribution changes, and laser light having a high hat type light intensity distribution can be obtained. In the collecting optical system 15g, the pre-pulse laser light P output from the multimode optical fiber 31e can be reduced and projected onto the liquid droplet DL to form a junction image. Thereby, the pre-pulsed laser light P having the high-hat type light intensity distribution can be irradiated to the droplet DL.

一般而言，光纖，只要是最小彎折半徑以上之彎折半徑，則係能夠自由地作彎折。進而，在對於數百m之光傳導作考慮的情況時，將較於藉由鏡或透鏡來作傳導的情況，在由光纖所致之光傳導中，係能夠減少光學元件之數量，並且，針對光之衰減，亦多有會成為有利的情況。因此，若是作為修正光學元件而使用圖14中所示之多模光纖31e，則係能夠將預脈衝雷射裝置3和集光光學系15g之間的配置之自由度提昇，而能夠使光束軸之調整成為容易 。又，就算是當預脈衝雷射裝置3和集光光學系15g之間之距離為大的情況時，亦能夠使從預脈衝雷射裝置3起直到集光光學系15g為止的光傳導成為容易。 In general, the optical fiber can be freely bent as long as it is a bending radius equal to or greater than the minimum bending radius. Further, in the case of considering light conduction of several hundred m, in the case of conduction by a mirror or a lens, in the light conduction by the optical fiber, the number of optical elements can be reduced, and For the attenuation of light, there are many cases that will be favorable. Therefore, if the multimode optical fiber 31e shown in Fig. 14 is used as the correcting optical element, the degree of freedom between the pre-pulse laser device 3 and the collecting optical system 15g can be increased, and the beam axis can be made. Adjustment becomes easy . Further, even when the distance between the pre-pulse laser device 3 and the collecting optical system 15g is large, light conduction from the pre-pulse laser device 3 to the collecting optical system 15g can be made easy. .

〈7.第2實施形態〉 <7. Second embodiment>

圖15，係對於第2實施型態的EUV光產生裝置之構成作概略性展示。第2實施型態之EUV光產生裝置，係亦可具備有：將從預脈衝雷射裝置3所輸出之預脈衝雷射光P和從主脈衝雷射裝置4所輸出之主脈衝雷射光M，經由互為相異之路徑來供給至腔室1內的構成。 Fig. 15 is a schematic view showing the configuration of an EUV light generating device of the second embodiment. The EUV light generating device according to the second embodiment may further include: pre-pulse laser light P output from the pre-pulse laser device 3 and main pulse laser light M output from the main pulse laser device 4, The configuration is supplied to the inside of the chamber 1 via mutually different paths.

從預脈衝雷射裝置3所輸出之預脈衝雷射光P，係亦可成為：經由高反射鏡15c、被設置在腔室1處之窗12b、離軸拋物面鏡15d、被形成在EUV集光鏡5處之1個的貫通孔21b等，來集光在被供給至腔室1內的液滴DL上。藉由此，係能夠產生擴散靶材。 The pre-pulse laser light P outputted from the pre-pulse laser device 3 may be formed in the EUV light collection via the high mirror 15c, the window 12b provided at the chamber 1, and the off-axis parabolic mirror 15d. The through holes 21b and the like of one of the mirrors 5 collect light on the droplets DL supplied into the chamber 1. Thereby, a diffusion target can be produced.

從主脈衝雷射裝置4所輸出之預脈衝雷射光M，係亦可成為：經由高反射鏡15e、窗12b、離軸拋物面鏡15b、被形成在EUV集光鏡5處之另外1個的貫通孔21a等，來集光在擴散靶材上。 The pre-pulse laser light M outputted from the main pulse laser device 4 may be formed by the high mirror 15e, the window 12b, the off-axis parabolic mirror 15b, and the other one formed at the EUV collecting mirror 5. The through holes 21a and the like are used to collect light on the diffusion target.

若依據第2實施型態，則係能夠將預脈衝雷射光P和主脈衝雷射光M經由互為相異之光學系來對於靶材作照射。因此，係成為能夠容易地以使預脈衝雷射光P和主脈衝雷射光M分別形成所期望之大小之集光點的方式來進行光學系之設計以及製作。又，就算是並不使用用以將預脈衝 雷射光P和主脈衝雷射光M同軸化的光束集聚器等之光學元件，亦能夠對於液滴DL以及擴散靶材，而分別將預脈衝雷射光P以及主脈衝雷射光M從略相同之方向來作照射。關於其他各點，係可與第1實施型態中之構成相同。 According to the second embodiment, the pre-pulse laser light P and the main pulse laser light M can be irradiated to the target through mutually different optical systems. Therefore, it is possible to easily design and fabricate the optical system such that the pre-pulse laser light P and the main pulse laser light M respectively form a collection spot of a desired size. Also, even if it is not used to pre-pulse The optical elements such as the beam aggregator of the laser beam P and the main pulse laser light M can also be used for the droplet DL and the diffusion target, and the pre-pulse laser light P and the main pulse laser light M are respectively slightly in the same direction. To illuminate. The other points are the same as those in the first embodiment.

〈8.第3實施形態〉 <8. Third embodiment>

圖16A，係對於第3實施型態的EUV光產生裝置之構成作概略性展示，圖16B，係為圖16A中所示之EUV光產生裝置的XVIB-XVIB面處之剖面圖。第3實施型態之EUV光產生裝置，係亦可具備有：將從預脈衝雷射裝置3所輸出之預脈衝雷射光P，經由圖16B中所示之離軸拋物面鏡15f，來從相對於EUV光之光軸而略正交的方向，而供給至腔室1內的構成。 Fig. 16A is a schematic view showing the configuration of an EUV light generating device of a third embodiment, and Fig. 16B is a cross-sectional view taken along line XVIB-XVIB of the EUV light generating device shown in Fig. 16A. The EUV light generating device according to the third embodiment may be provided with the pre-pulse laser light P output from the pre-pulse laser device 3 via the off-axis parabolic mirror 15f shown in Fig. 16B. It is supplied to the inside of the chamber 1 in a direction slightly orthogonal to the optical axis of the EUV light.

若依據第3實施型態，則由於並不需要在EUV集光鏡5處形成用以導入預脈衝雷射光P的貫通孔，因此，相較於第2實施型態，係能夠將由EUV集光鏡5所致的EUV光之集光效率提高。關於其他各點，係可與第2實施型態相同。 According to the third embodiment, since it is not necessary to form a through hole for introducing the pre-pulsed laser light P at the EUV collecting mirror 5, it is possible to collect light by EUV as compared with the second embodiment. The light collecting efficiency of the EUV light caused by the mirror 5 is improved. The other points are the same as those of the second embodiment.

〈9.第4實施形態〉 <9. Fourth embodiment>

圖17，係對於第4實施型態的EUV光產生裝置之構成作概略性展示。第4實施型態之EUV光產生裝置，係亦可具備有：在圖9中所示之第1實施型態的EUV光產 生裝置中，追加有液滴DL之位置檢測機構的構成。在第4實施型態之EUV光產生裝置中，係亦可因應於所檢測出之液滴DL的位置，來對於雷射光之輸出時序等作控制。液滴DL之位置檢測機構，係亦可包含有液滴Z方向檢測器70、和液滴XY方向檢測器80。 Fig. 17 is a schematic view showing the configuration of an EUV light generating device of the fourth embodiment. The EUV light generating device of the fourth embodiment may be provided with the EUV light product of the first embodiment shown in FIG. In the living device, the position detecting mechanism of the droplet DL is added. In the EUV light generating device of the fourth embodiment, the output timing of the laser light or the like can be controlled in accordance with the position of the detected droplet DL. The position detecting mechanism of the droplet DL may include a droplet Z direction detector 70 and a droplet XY direction detector 80.

液滴Z方向檢測器70，係亦可將液滴DL之前進方向(Z方向)的位置檢測出來。具體而言，液滴Z方向檢測器70，係亦可在液滴DL到達了Z方向之特定位置處時，對於雷射觸發(laser trigger)產生機構71而輸出Z位置檢測訊號。 The droplet Z direction detector 70 can also detect the position of the droplet DL in the forward direction (Z direction). Specifically, the droplet Z direction detector 70 may output a Z position detecting signal to the laser trigger generating mechanism 71 when the droplet DL reaches a specific position in the Z direction.

雷射觸發產生機構71，係亦可設為：若是受訊到Z位置檢測訊號，則在經過了特定之延遲時間時，對於預脈衝雷射裝置3而輸出預脈衝雷射振盪觸發訊號。預脈衝雷射裝置3，係亦能夠根據預脈衝雷射振盪觸發訊號來輸出預脈衝雷射光P。此特定之延遲時間，係亦能夠以在液滴DL到達電漿產生區域PS處的時序下而使預脈衝雷射裝置3輸出預脈衝雷射光P的方式，來作設定。 The laser trigger generating mechanism 71 may be configured to output a pre-pulse laser oscillation trigger signal to the pre-pulse laser device 3 when a specific delay time has elapsed if the Z-position detection signal is received. The pre-pulse laser device 3 is also capable of outputting the pre-pulse laser light P according to the pre-pulse laser oscillation trigger signal. This specific delay time can also be set in such a manner that the pre-pulse laser device 3 outputs the pre-pulse laser light P at the timing at which the droplet DL reaches the plasma generating region PS.

在雷射觸發產生機構71對於預脈衝雷射裝置3而輸出了預脈衝雷射震盪觸發訊號之後，係對於液滴DL而照射預脈衝雷射光P，液滴DL係能夠擴散。而，雷射觸發產生機構71，係亦可設為：在經過了特定之延遲時間時，對於主脈衝雷射裝置4而輸出主脈衝雷射振盪觸發訊號。主脈衝雷射裝置4，係亦能夠根據主脈衝雷射振盪觸發訊號來輸出主脈衝雷射光M。此特定之延遲時間，係亦能夠 以在擴散靶材擴散為所期望之大小的時序處而使從主脈衝雷射裝置4所輸出之主脈衝雷射光M被照射至擴散靶材處的方式，來作設定。 After the laser trigger generating means 71 outputs the pre-pulse laser oscillation trigger signal to the pre-pulse laser device 3, the pre-pulse laser light P is irradiated to the droplet DL, and the droplet DL can be diffused. The laser trigger generating mechanism 71 may be configured to output a main pulse laser oscillation trigger signal to the main pulse laser device 4 when a specific delay time elapses. The main pulse laser device 4 is also capable of outputting the main pulse laser light M according to the main pulse laser oscillation trigger signal. This specific delay time is also able to The main pulse laser light M output from the main pulse laser device 4 is irradiated to the diffusion target at a timing at which the diffusion target is diffused to a desired size.

如同上述一般，係亦可因應於液滴DL之Z方向的位置之檢測結果，來對於各個脈衝雷射光之輸出時序作控制。 As described above, the output timing of each pulsed laser light can be controlled in accordance with the detection result of the position of the droplet DL in the Z direction.

可以想見，在液滴Z方向檢測器70、和雷射觸發產生機構71、以及預脈衝雷射裝置3處，係存在有各種之顫動(jitter)(時間軸上之抖動)。作為此種顫動，係可列舉出：(1)在液滴Z方向檢測器之訊號的輸出中所需要的時間之顫動(σa)、(2)在液訊號之送、受訊中所需要的時間之顫動(σb)、(3)在訊號之處理中所需要的時間之顫動(σc)、(4)在從預脈衝雷射裝置3而輸出預脈衝雷射光P時所需要的時間之顫動(σd)、以及(5)在從主脈衝雷射裝置4而輸出主脈衝雷射光M時所需要的時間之顫動(σf)等。上述顫動之標準差σj，係可藉由下式而作表現。 It is conceivable that various jitters (jitter on the time axis) exist at the droplet Z direction detector 70, the laser trigger generating mechanism 71, and the pre-pulse laser device 3. Examples of such chattering include: (1) jitter (σa) required for the output of the signal of the detector in the direction of the droplet Z, and (2) required for sending and receiving the liquid signal. Time flutter (σb), (3) jitter of time required for processing of the signal (σc), (4) jitter of time required to output pre-pulse laser light P from the pre-pulse laser device 3 (σd), and (5) chattering (σf) of time required for outputting the main pulse laser light M from the main pulse laser device 4. The standard deviation σj of the above chattering can be expressed by the following formula.

σj=(σa2+σb2+σc2+σd2+σf2+．．．．)1/2 Σj=(σa 2 +σb 2 +σc 2 +σd 2 +σf 2 +....) 1/2

在預脈衝雷射光P之照射位置和液滴DL之位置間的Z方向上之偏差，例如，係可表現為2σj×v(但是，v係為液滴DL之移動速度)。於此情況，在預脈衝雷射光P之光束剖面中的光強度分布為具備有特定之均一性的區域之直徑Dtz，係只要滿足下述之條件即可。 The deviation in the Z direction between the irradiation position of the pre-pulsed laser light P and the position of the droplet DL can be expressed, for example, as 2σj × v (however, v is the moving speed of the droplet DL). In this case, the light intensity distribution in the beam profile of the pre-pulse laser light P is the diameter Dtz of the region having the specific uniformity, as long as the following conditions are satisfied.

Dtz≧Dd+2σi×v Dtz≧Dd+2σi×v

液滴XY方向檢測器80，係亦可檢測出從靶材供給部2而被依序作供給之液滴DL的在與前進方向相正交之面上的位置(液滴DL之XY方向的位置)，並對於液滴XY控制器(controller)81而輸出XY位置檢測訊號。 The droplet XY direction detector 80 can also detect the position of the droplet DL sequentially supplied from the target supply unit 2 on the surface orthogonal to the advancing direction (the XY direction of the droplet DL) Position), and outputs an XY position detection signal for the droplet XY controller 81.

液滴XY控制器81，係亦可設為：若是受訊有XY位置檢測訊號，則判定所檢測出之液滴DL的位置是否位於特定之容許範圍內的位置處。當液滴DL之位置並非為特定之容許範圍內的情況時，液滴XY控制器81，係亦可對於液滴XY控制機構82而輸出XY驅動訊號。 The droplet XY controller 81 may be configured to determine whether the position of the detected droplet DL is within a specific allowable range if the XY position detection signal is received. When the position of the droplet DL is not within a specific allowable range, the droplet XY controller 81 may also output an XY driving signal to the droplet XY control mechanism 82.

液滴XY控制機構82，係亦可藉由根據XY驅動訊號來驅動被設置在靶材供給部2處之驅動馬達，而對於液滴DL之輸出位置作控制。如同上述一般，係亦可因應於液滴DL之XY方向的位置之檢測結果，來對於液滴DL之XY方向的輸出位置作控制。 The droplet XY control unit 82 can also control the output position of the droplet DL by driving the drive motor provided at the target supply unit 2 based on the XY drive signal. As described above, the output position of the droplet DL in the XY direction can be controlled in accordance with the detection result of the position of the droplet DL in the XY direction.

另外，在如此這般地進行控制的情況中，要對於液滴之每一者而分別變更輸出位置一事，係為困難。故而，若是將XY方向之短期變動(標準差)設為σx，則在預脈衝雷射光P之光束剖面中的光強度分布為具備有特定之均一性的區域之直徑Dtx，例如係以滿足下述之條件為理想。 Further, in the case of performing such control as described above, it is difficult to change the output position for each of the liquid droplets. Therefore, if the short-term variation (standard deviation) in the XY direction is σx, the light intensity distribution in the beam profile of the pre-pulse laser light P is the diameter Dtx of the region having the specific uniformity, for example, to satisfy The conditions stated are ideal.

Dtx≧Dd+2σx Dtx≧Dd+2σx

在第4實施型態中，雖係針對將液滴DL之輸出位置在XY方向上作控制的例子而作了展示，但是，係並不被限定於此，亦可設為對於從噴嘴13所輸出之液滴DL的輸出角度作控制。 In the fourth embodiment, the output position of the liquid droplet DL is controlled in the XY direction. However, the present invention is not limited thereto, and may be used for the nozzle 13 . The output angle of the output droplet DL is controlled.

〈10.第5實施形態〉 <10. Fifth Embodiment>

圖18A，係為對於第5實施型態的EUV光產生裝置之構成作概略性展示的圖，圖18B，係為圖18A中所示之EUV光產生裝置的XVIIIB-XVIIIB面處之剖面圖。第5實施型態之EUV光產生裝置，係亦可具備有：在圖9中所示之第1實施型態的EUV光產生裝置中，追加有磁石6a以及6b的構成。在第5實施型態中，係亦可藉由以磁石6a以及6b而在腔室1內產生磁場，來回收在腔室1內所產生了的離子。 Fig. 18A is a view schematically showing the configuration of an EUV light generating device of a fifth embodiment, and Fig. 18B is a cross-sectional view taken along line XVIIIB-XVIIIB of the EUV light generating device shown in Fig. 18A. In the EUV light generating device of the fifth embodiment, the electromagnets 6a and 6b may be added to the EUV light generating device of the first embodiment shown in FIG. In the fifth embodiment, it is also possible to recover ions generated in the chamber 1 by generating a magnetic field in the chamber 1 by the magnets 6a and 6b.

磁石6a以及6b，係亦可為包含有線圈(coil)卷線或線圈卷線之冷卻機構等的電磁石。在此些之磁石6a以及6b處，係亦可被連接有經由電源控制器6d而被作控制之電源裝置6c。藉由以電源控制器6d來對於從電源裝置6c所供給至磁石6a以及6b處之電流作調節，係能夠在腔室1內產生特定方向之磁場。作為磁石6a以及6b，例如係亦可使用超導電磁石。另外，於此雖係針對使用有2個的磁石6a以及6b之例來作了說明，但是，係亦可使用1個磁石。或者是，亦可使用永久磁石。又，磁石係亦可被配置在腔室內。 The magnets 6a and 6b may be electromagnets including a cooling mechanism such as a coil winding or a coil winding. At the magnets 6a and 6b, a power supply unit 6c that is controlled via the power supply controller 6d may be connected. By adjusting the current supplied from the power supply unit 6c to the magnets 6a and 6b by the power source controller 6d, it is possible to generate a magnetic field in a specific direction in the chamber 1. As the magnets 6a and 6b, for example, a superconducting magnet can also be used. In addition, although the example which used two magnets 6a and 6b was demonstrated here, you may use one magnet. Alternatively, permanent magnets can be used. Further, the magnet system may be disposed in the chamber.

經由主脈衝雷射光M之照射所產生的靶材物質之電漿，係可能包含有正離子以及負離子(或者是電子)。在腔室1內移動之正離子以及負離子，由於係在磁場中而受到羅倫茲力，因此係能夠沿著磁力線而作螺旋狀移動。藉由 此，靶材物質之離子係被磁場所捕捉，並能夠回收至被設置在磁場中之離子回收部19a以及19b處。藉由此，係能夠降低腔室1內之離子的飛散，而能夠對由於離子之對於EUV集光鏡5等的腔室內之光學元件的附著所導致的光學元件之劣化作抑制。另外，在圖18B中，磁場雖係成為朝向紙面下方之方向，但是，就算是成為朝向紙面上方之方向，亦能夠達成相同之功能。 The plasma of the target material generated by the irradiation of the main pulsed laser light M may contain positive ions as well as negative ions (or electrons). The positive ions and negative ions moving in the chamber 1 are subjected to a Lorentz force due to being in a magnetic field, and thus can be helically moved along the magnetic lines of force. By Thus, the ions of the target substance are captured by the magnetic field and can be recovered to the ion recovery portions 19a and 19b provided in the magnetic field. Thereby, it is possible to reduce the scattering of ions in the chamber 1, and it is possible to suppress deterioration of the optical element due to adhesion of ions to the optical elements in the chamber of the EUV collecting mirror 5 or the like. In addition, in FIG. 18B, although the magnetic field is oriented in the downward direction of the paper surface, the same function can be achieved even in the direction toward the upper side of the paper surface.

例如，用以降低由離子所導致之污染的減災(mitigation)技術，係並不被限定於使用有磁場者，亦可採用利用蝕刻氣體(etching gas)來對於附著在EUV集光鏡5等處的物質作蝕刻之構成。又，減災技術，係亦可採用在磁場中而使氫氣(H2)或者是氫自由基(radical)(H)作用並將離子除去的構成。 For example, a mitigation technique for reducing contamination caused by ions is not limited to the use of a magnetic field, and an etching gas may be used for attaching to the EUV collecting mirror 5 or the like. The composition of the substance is etched. Further, the disaster mitigation technique may be a configuration in which hydrogen gas (H 2 ) or hydrogen radical (H) acts and removes ions in a magnetic field.

〈11.第6實施形態〉 <11. Sixth embodiment>

圖19，係對於第6實施型態的EUV光產生裝置之構成作概略性展示。第6實施型態之EUV光產生裝置，係亦可在主脈衝雷射裝置4和光束集聚器15a之間，包含有用以對於主脈衝雷射光M之光強度分布作修正的修正光學元件41。 Fig. 19 is a schematic view showing the configuration of an EUV light generating device of a sixth embodiment. The EUV light generating device of the sixth embodiment may include a correcting optical element 41 for correcting the light intensity distribution of the main pulsed laser light M between the main pulse laser device 4 and the beam aggregator 15a.

修正光學元件41之構成，係可為與用以對於預脈衝雷射光P之光強度分布作修正的修正光學元件31之構成相同。經由修正光學元件41，係能夠對於主脈衝雷射光M，而以使其成為在光束剖面上而光強度分布具備有特定之 均一性的方式來作修正。藉由此，係成為能夠使主脈衝雷射光M略均等地照射至擴散靶材處。關於其他各點，係可與第1實施型態相同。 The configuration of the correcting optical element 41 can be the same as that of the correcting optical element 31 for correcting the light intensity distribution of the pre-pulse laser light P. By correcting the optical element 41, the main pulse laser light M can be made to have a specific light intensity distribution on the beam profile. A uniform approach to correcting. Thereby, it is possible to irradiate the main pulse laser light M to the diffusion target with a slight uniformity. The other points are the same as in the first embodiment.

圖20A，係為對於對液滴DL而照射了預脈衝雷射光P的模樣作展示之概念圖。圖20B以及圖20C，係為對於將具備有高帽型之光強度分布的主脈衝雷射光M，照射至藉由對液滴DL照射預脈衝雷射光P所形成的環體(torus)型之擴散靶材處的模樣，作展示之概念圖。圖20A以及圖20B，係為從與預脈衝雷射光P以及主脈衝雷射光M之光束軸方向相正交的方向來對於靶材物質作了觀察者。圖20C，係為從主脈衝雷射光M之光束軸方向來對於靶材物質作了觀察者。 Fig. 20A is a conceptual diagram showing a pattern in which the pre-pulse laser light P is irradiated to the droplet DL. 20B and FIG. 20C are diagrams for irradiating the main pulse laser light M having the high-hat type light intensity distribution to a torus type formed by irradiating the droplet DL with the pre-pulse laser light P. Diffusion of the appearance of the target, a conceptual map for display. 20A and 20B are views of the target material from a direction orthogonal to the beam axis direction of the pre-pulse laser light P and the main pulse laser light M. Fig. 20C is an observer of the target material from the beam axis direction of the main pulsed laser light M.

如圖20A中所示一般，當將預脈衝雷射光P集光照射於液滴DL處時，在被照射有預脈衝雷射光P之液滴DL的表面附近，可能會產生雷射剝蝕。其結果，經由雷射剝蝕之能量(energy)，可能會從被照射有預脈衝雷射光P之液滴DL的表面起而朝向液滴DL之內部產生衝擊波。此衝擊波，係可能會傳導至液滴DL之全體處。於此，當預脈衝雷射光P之光強度為第1特定值(例如1×109W/cm2)以上的情況時，可能會由於此衝擊波而使液滴DL被破壞為粉狀並擴散。 As shown generally in Fig. 20A, when the pre-pulsed laser light P is focused on the liquid droplet DL, laser ablation may occur in the vicinity of the surface of the liquid droplet DL to which the pre-pulse laser light P is irradiated. As a result, a shock wave may be generated toward the inside of the droplet DL from the surface of the droplet DL irradiated with the pre-pulse laser light P via the energy of the laser ablation. This shock wave may be conducted to the entire portion of the droplet DL. Here, when the light intensity of the pre-pulse laser light P is equal to or greater than the first specific value (for example, 1 × 10 9 W/cm 2 ), the droplet DL may be broken into powder and diffused due to the shock wave. .

而，當預脈衝雷射光P之光強度為第2特定值(例如6.4×109W/cm2)以上的情況時，液滴DL係被破壞為粉狀，並可能會形成如同圖20B以及圖20C中所示一般之環體 形的擴散靶材。如同圖20B以及圖20C中所示一般，環體形之擴散靶材，係為液滴DL相對於預脈衝雷射光P之光束軸而以略軸對稱且環體狀而作了擴散者。 On the other hand, when the light intensity of the pre-pulse laser light P is equal to or greater than the second specific value (for example, 6.4 × 10 9 W/cm 2 ), the droplet DL is broken into powder and may form as shown in Fig. 20B. The general ring-shaped diffusion target shown in Fig. 20C. As shown in FIG. 20B and FIG. 20C, the ring-shaped diffusion target is diffused in a slightly axisymmetric and ring-like shape with respect to the beam axis of the pre-pulsed laser light P.

另外，為了形成環體型之擴散靶材所需的具體條件，例如係如同下述一般。預脈衝雷射光P之光強度範圍，係可為6.4×109W/cm2以上、3.2×1010W/cm2以下。液滴DL之直徑，係可為12μm以上、40μm以下。 Further, specific conditions required for forming a ring-shaped diffusion target are as follows, for example. The light intensity range of the pre-pulse laser light P may be 6.4 × 10 9 W/cm 2 or more and 3.2 × 10 10 W/cm 2 or less. The diameter of the droplet DL may be 12 μm or more and 40 μm or less.

接著，針對對於環體型之擴散靶材的主脈衝雷射光M之照射作說明。環體型之擴散靶材，係可在將預脈衝雷射光P對於液滴DL而作了照射之後的例如0.5 μs~2.0 μs的時序處而形成。故而，較理想，係在將預脈衝雷射光P對於液滴DL作了照射後的上述時序處，而將主脈衝雷射光M對於擴散靶材作照射。 Next, the irradiation of the main pulsed laser light M for the ring-shaped diffusion target will be described. The ring-shaped diffusion target can be formed at a timing of, for example, 0.5 μs to 2.0 μs after the pre-pulsed laser light P is irradiated to the droplet DL. Therefore, it is preferable that the main pulse laser light M is irradiated to the diffusion target at the above-described timing after the pre-pulse laser light P is irradiated to the liquid droplet DL.

又，如同圖20B以及圖20C中所示一般，環體形之擴散靶材的形狀，係成為在預脈衝雷射光P之光束軸方向上的長度為較在與預脈衝雷射光P之光束軸方向相正交的方向上之長度而更短的形狀。較理想，主脈衝雷射光M，係對於此種擴散靶材，而從與預脈衝雷射光P略相同之方向來作照射。可以推測到，藉由此，係能夠將主脈衝雷射光M更加均一地對於擴散靶材作照射，而能夠使主脈衝雷射光M更有效率地被靶材物質所吸收。藉由此，係有能夠在LPP式EUV光產生裝置中而使CE提昇的情況。 Further, as shown in FIG. 20B and FIG. 20C, the shape of the ring-shaped diffusion target is such that the length in the beam axis direction of the pre-pulsed laser light P is longer than the beam axis direction of the pre-pulse laser light P. A shorter shape in the direction orthogonal to the direction. Preferably, the main pulsed laser light M is irradiated from the direction slightly the same as the pre-pulsed laser light P for such a diffusion target. It is presumed that the main pulsed laser light M can be more uniformly irradiated to the diffusion target, and the main pulsed laser light M can be more efficiently absorbed by the target material. Thereby, it is possible to raise the CE in the LPP type EUV light generating device.

至少主脈衝雷射光M之在光束剖面上的光強度分布，係能夠經由參考圖19所說明了的修正光學元件41，來以 使其具備有特定之均一性的方式而作修正。另外，為了產生環體型之擴散靶材，預脈衝雷射光P之在光束剖面上的光強度分布，係亦可並不具備有特定之均一性。於此情況，在圖19所示之第6實施型態中係亦可並不設置修正光學元件31。但是，係並不被限定於此，亦可構成為：設置修正光學元件31，來將起因於液滴之位置的偏差所導致的擴散靶材之位置的偏差降低。 At least the light intensity distribution of the main pulsed laser light M on the beam profile can be corrected by the correcting optical element 41 described with reference to FIG. Make corrections in a way that has specific uniformity. In addition, in order to generate a ring-shaped diffusion target, the light intensity distribution of the pre-pulse laser light P on the beam profile may not have specific uniformity. In this case, the correction optical element 31 may not be provided in the sixth embodiment shown in FIG. However, the present invention is not limited thereto, and the correction optical element 31 may be provided to reduce the variation in the position of the diffusion target due to the variation in the position of the liquid droplet.

可以推測到，藉由將光強度分布為具備有特定之均一性的主脈衝雷射光M對於環體型之擴散靶材作照射，會從環體型之擴散靶材而以圓筒狀來放出電漿。而，係能夠期待有將朝向圓筒內部擴散的電漿封閉於該圓筒內的效果。故而，係可將電漿以高溫且高密度來產生，而能夠期待有使CE提昇的效果。另外，所謂「環體型」，雖係指圓環體之形狀，但是，擴散靶材係並非絕對需要為圓環體，只要為實質性地擴散為環狀者即可。 It is presumed that by irradiating the light intensity to the main pulse laser light M having specific uniformity, the diffusion target of the ring type is irradiated, and the plasma is discharged from the ring type diffusion target in a cylindrical shape. . Further, it is expected that there is an effect of sealing the plasma diffused toward the inside of the cylinder in the cylinder. Therefore, the plasma can be produced at a high temperature and a high density, and an effect of enhancing the CE can be expected. In addition, the "ring type" refers to the shape of the torus, but the diffusion target is not absolutely required to be a torus, and may be substantially diffused into a ring shape.

於此，若是將環體型之擴散靶材的位置之偏差設為△X，則較理想，主脈衝雷射光M之光強度分布為具備有特定之均一性的區域之直徑Dtop，係相對於環體型之擴散靶材的外徑Dout而具備有以下的關係。 In this case, it is preferable that the difference in the position of the ring-shaped diffusion target is ΔX, and the light intensity distribution of the main pulse laser light M is the diameter Dtop of the region having the specific uniformity, which is relative to the ring. The outer diameter Dout of the bulk diffusion target has the following relationship.

Dtop≧Dout+2△X Dtop≧Dout+2△X

亦即是，在主脈衝雷射光M之光束剖面中而光強度分布為具備有特定之均一性的區域之直徑Dtop，係以成為在環體型之擴散靶材的外徑Dout上再加上了擴散靶材之位置的偏移△X之2倍後之大小以上的大小為理想。藉由設 為此種構成，係能夠對於環體型之擴散靶材的全體，而照射光強度為略均一之主脈衝雷射光M。因此，係能夠使擴散靶材之更多的部份電漿化。其結果，可以推測到，係能夠降低靶材物質之破片的產生。 That is, in the beam profile of the main pulsed laser light M, the light intensity distribution is the diameter Dtop of the region having the specific uniformity, and is added to the outer diameter Dout of the ring-shaped diffusion target. It is preferable that the size of the diffusion target is twice or more the magnitude of the shift ΔX. By setting For this configuration, the main pulse laser light M having a slightly uniform illumination intensity can be applied to the entire diffusion target of the ring type. Therefore, it is possible to plasmaize more portions of the diffusion target. As a result, it is estimated that the generation of fragments of the target material can be reduced.

〈12.第7實施形態〉 <12. Seventh Embodiment>

圖21，係為對於在第7實施型態的EUV光產生裝置中而輸出預脈衝雷射光P的鈦藍寶石雷射(titanium sapphire laser)之構成例作展示的概念圖。在第7實施型態中之鈦藍寶石雷射50a，係亦可在上述第1~第6實施型態中，作為輸出用以使液滴DL擴散的預脈衝雷射光P之預脈衝雷射裝置，而設置在腔室之外。 Fig. 21 is a conceptual diagram showing a configuration example of a titanium sapphire laser that outputs pre-pulse laser light P in the EUV light generating device of the seventh embodiment. The titanium sapphire laser 50a in the seventh embodiment may be a pre-pulse laser device that outputs pre-pulse laser light P for diffusing the droplets DL in the first to sixth embodiments described above. And set outside the chamber.

在第7實施型態中，鈦藍寶石雷射50a，係亦可具備有雷射共振器，該雷射共振器，係為在半導體可飽和吸收鏡51a和輸出耦合鏡52a之間，而從半導體可飽和吸收鏡51a側起依序配置有凹面鏡53a、第1泵送(pumping)用鏡54a、鈦藍寶石結晶55a、第2泵送用鏡56a、以及2個的稜鏡(prism)57a、58a。進而，鈦藍寶石雷射50a，係亦可包含有用以將激勵光導入至雷射共振器中的激勵光源59a。 In the seventh embodiment, the titanium sapphire laser 50a may be provided with a laser resonator between the semiconductor saturable absorption mirror 51a and the output coupling mirror 52a, and the semiconductor. A concave mirror 53a, a first pumping mirror 54a, a titanium sapphire crystal 55a, a second pumping mirror 56a, and two prisms 57a and 58a are disposed in this order from the side of the saturable absorption mirror 51a. . Further, the titanium sapphire laser 50a may also include an excitation light source 59a for introducing excitation light into the laser resonator.

第1泵送用鏡54a，係可為使從雷射共振器外部而來之激勵光以高透過率而透過並將從雷射共振器內部而來之光以高反射率而反射的鏡。鈦藍寶石結晶55a，係可為受光激勵光並進行激勵發射的雷射媒質。2個的稜鏡57a以 及58a，係亦可使特定之波長的光作選擇性透過。輸出耦合鏡52a，係亦可使在雷射共振器內而被作了放大的光之一部分透過並輸出，且將剩餘的一部分反射並回送至雷射共振器內。半導體可飽和吸收鏡51a，係可為將反射層和可飽和吸收體層作了層積之鏡，並可藉由使射入光之光強度為弱的部份被可飽和吸收體層所吸收且使射入光之光強度為強的部份透過可飽和吸收體層並被反射層反射，來將射入光短脈衝化。 The first pumping mirror 54a is a mirror that transmits excitation light from the outside of the laser resonator at a high transmittance and reflects light from the inside of the laser resonator with high reflectance. The titanium sapphire crystal 55a is a laser medium that is excited by light and is excited to emit light. 2 稜鏡57a And 58a, which is also capable of selectively transmitting light of a specific wavelength. The output coupling mirror 52a can also partially transmit and output a portion of the amplified light in the laser resonator, and reflect and return the remaining portion to the laser resonator. The semiconductor saturable absorption mirror 51a may be a mirror that laminates the reflective layer and the saturable absorber layer, and may be absorbed by the saturable absorber layer by making the intensity of the incident light light weak. The intensity of the incident light is transmitted through the saturable absorber layer and reflected by the reflective layer to short-pulse the incident light.

作為激勵光源59a，例如係亦可使用半導體激勵Nd：YVO4雷射。亦可將從激勵光源59a而來之第2高頻波的光，經由第1泵送用鏡54a而導入至雷射共振器內。藉由對於半導體可飽和吸收鏡51a之位置作調整並使其與雷射共振器之縱模同步地而振盪，係能夠從輸出耦合鏡52a而輸出具有微微秒尺度之脈衝時間寬幅的脈衝雷射光。另外，當脈衝能量為小的情況時，係亦可藉由再生放大器來將此脈衝雷射光作放大。 As the excitation light source 59a, for example, a semiconductor excitation Nd:YVO 4 laser can also be used. The light of the second high-frequency wave from the excitation light source 59a may be introduced into the laser resonator via the first pumping mirror 54a. By modulating the position of the semiconductor saturable absorption mirror 51a and synchronizing it with the longitudinal mode of the laser resonator, it is possible to output a pulse-throat having a pulse time width of a picosecond scale from the output coupling mirror 52a. Shoot light. In addition, when the pulse energy is small, the pulsed laser light can be amplified by a regenerative amplifier.

若依據第7實施型態，則由於係輸出具備有微微秒尺度之脈衝時間寬幅的短脈衝雷射光，並作為預脈衝雷射光P而照射至液滴DL處，因此，係能夠藉由小的脈衝能量來使液滴DL擴散。 According to the seventh embodiment, since the short-pulse laser light having a pulse time width of a picosecond scale is output and irradiated to the droplet DL as the pre-pulse laser light P, it is possible to The pulse energy is used to diffuse the droplet DL.

〈13.第8實施形態〉 <13. Eighth Embodiment>

圖22，係為對於在第8實施型態的EUV光產生裝置中而輸出預脈衝雷射光P的光纖雷射之構成作展示的概念 圖。在第8實施型態中之光纖50b，係亦可在上述第1~第6實施型態中，作為輸出用以使液滴DL擴散的預脈衝雷射光P之預脈衝雷射裝置，而設置在腔室之外。 Figure 22 is a concept showing the configuration of a fiber laser that outputs pre-pulse laser light P in the EUV light generating device of the eighth embodiment. Figure. The optical fiber 50b in the eighth embodiment may be provided as a pre-pulse laser device that outputs pre-pulse laser light P for diffusing the liquid droplets DL in the first to sixth embodiments. Outside the chamber.

在第8實施型態中，光纖50b，係亦可具備有雷射共振器，該雷射共振器，係為在高反射鏡51b和半導體可飽和吸收鏡52b之間，而從高反射鏡51b側起依序配置有光柵對(grating pair)53b、第1偏光維持光纖54b、多工器(multiplexer)55b、分離元件56b、第2偏光維持光纖57b、以及集光光學系58b。進而，光纖雷射50b，係亦可包含有用以將激勵光導入至雷射共振器中的激勵光源59b。 In the eighth embodiment, the optical fiber 50b may be provided with a laser resonator between the high mirror 51b and the semiconductor saturable absorption mirror 52b, and the high mirror 51b. A grating pair 53b, a first polarization maintaining fiber 54b, a multiplexer 55b, a separating element 56b, a second polarization maintaining fiber 57b, and a collecting optical system 58b are disposed side by side. Further, the fiber laser 50b may also include an excitation light source 59b for introducing excitation light into the laser resonator.

多工器55b，係亦可將從激勵光源59b而來之激勵光導入至第1偏光維持光纖54b處，並且在第1偏光維持光線54b和第2偏光維持光纖57b之間而使光透過。第1偏光維持光纖54b，係亦可被摻雜有鐿(Yb)並受光激勵光而進行激勵發射。光柵對53b，係亦可將特定之波長的光選擇性地做反射。半導體可飽和吸收鏡52b，係可為將反射層和可飽和吸收體層作了層積之鏡，並可藉由使射入光之光強度為弱的部份被可飽和吸收體層所吸收且使射入光之光強度為強的部份透過可飽和吸收體層並被反射層反射，來將射入光短脈衝化。分離元件56b，係亦可將在雷射共振器內而被作了放大的光之一部分分離並輸出，且將剩餘的一部分回送至雷射共振器內。若是從藉由光纖而作了連接的激勵光源59b而使激勵光被導入至多工器55b處， 則係能夠經由分離元件56b來輸出具備有微微秒尺度之脈衝時間寬幅的脈衝雷射光。 The multiplexer 55b can also introduce excitation light from the excitation light source 59b to the first polarization maintaining fiber 54b, and transmit light between the first polarization maintaining light 54b and the second polarization maintaining fiber 57b. The first polarization maintaining fiber 54b may be doped with ytterbium (Yb) and excited by light to perform excitation emission. The grating pair 53b can also selectively reflect light of a specific wavelength. The semiconductor saturable absorption mirror 52b may be a mirror that laminates the reflective layer and the saturable absorber layer, and may be absorbed by the saturable absorber layer by making the intensity of the incident light light weak. The intensity of the incident light is transmitted through the saturable absorber layer and reflected by the reflective layer to short-pulse the incident light. The separating element 56b can also partially separate and output one of the amplified light within the laser resonator and return the remaining portion to the laser resonator. If the excitation light source 59b connected by the optical fiber is used, the excitation light is introduced to the multiplexer 55b. Then, it is possible to output pulsed laser light having a pulse time width of a picosecond scale via the separation element 56b.

於此，所謂輸出具備有微微秒尺度(picosecond order)之脈衝時間寬幅的脈衝雷射光之微微秒脈衝雷射裝置，係指輸出脈衝時間寬幅T為未滿1ns(T<1ns)之脈衝雷射光的脈衝雷射裝置。進而，就算是適用能夠輸出具備有毫微微秒尺度(femtosecond order)之脈衝時間寬幅的脈衝雷射光之毫微微秒脈衝雷射裝置，亦能夠得到相同的效果。 Here, the so-called output picosecond pulse laser device having pulsed laser light with a pulse time width of picosecond order means that the output pulse time width T is less than 1 ns (T<1 ns). Pulsed laser device for laser light. Further, even if it is applied to a femtosecond pulse laser device capable of outputting pulsed laser light having a pulse time width of a femtosecond order, the same effect can be obtained.

若依據第8實施型態，則除了能夠得到與第7實施型態相同的效果以外，由於亦能夠將預脈衝雷射光P藉由光纖來作導入，因此，預脈衝雷射光P之前進方向的調整係能夠成為容易。 According to the eighth embodiment, in addition to the same effects as those of the seventh embodiment, since the pre-pulse laser light P can be introduced by the optical fiber, the pre-pulse laser light P is forwardly advanced. Adjustments can be made easy.

另外，若是雷射光之波長變得越短，則由錫所致之雷射光的吸收率係能夠變得越高。故而，當重視由錫所致之吸收的情況時，係以短波長較為有利。例如，相對於從Nd：YAG雷射裝置所輸出之基本波的波長1064nm，係依照高頻波2ω=532nm、3ω=355nm、4ω=266nm之順序而吸收效率依序變高。 Further, if the wavelength of the laser light becomes shorter, the absorption rate of the laser light by tin can be made higher. Therefore, when the absorption by tin is emphasized, it is advantageous to use a short wavelength. For example, the absorption efficiency is sequentially increased in the order of the high-frequency wave 2ω=532 nm, 3ω=355 nm, and 4ω=266 nm with respect to the wavelength of the fundamental wave output from the Nd:YAG laser device of 1064 nm.

另外，於此雖係對於使用具備有微微秒之脈衝寬幅的短脈衝雷射光之例來作了展示，但是，就算是使用具備有奈秒(nanosecond order)之脈衝時間寬幅的脈衝雷射光，亦能夠使液滴DL擴散。例如，就算是脈衝時間寬幅約15ns、反覆頻率100kHz、脈衝能量1.5mJ、波長1.03μm、 M2值未滿1.5的光纖雷射，亦可充分作使用。 In addition, although this is shown as an example of using short-pulse laser light having a pulse width of picoseconds, even a pulsed laser beam having a pulse time width of nanosecond order is used. It is also possible to diffuse the droplets DL. For example, even a fiber laser having a pulse time width of about 15 ns, a repetition frequency of 100 kHz, a pulse energy of 1.5 mJ, a wavelength of 1.03 μm, and an M 2 value of less than 1.5 can be sufficiently used.

〈14.預脈衝雷射光之照射條件〉 <14. Irradiation conditions of pre-pulse laser light>

圖23，係為對於本發明中之預脈衝雷射光P的照射條件之例作展示的表。若是將照射脈衝能量設為E(J)、將脈衝時間寬幅設為T(s)、將光強度分布為具備有特定之均一性的區域之直徑設為Dt(m)，則預脈衝雷射光P之光強度W(W/m2)，係可藉由下式來表示。 Fig. 23 is a table showing an example of the irradiation conditions of the pre-pulsed laser light P in the present invention. Pre-pulse mine is obtained by setting the irradiation pulse energy to E (J), the pulse time width to T (s), and the light intensity distribution to the diameter of the region having specific uniformity as Dt(m). The light intensity W (W/m 2 ) of the incident light P can be expressed by the following formula.

W=E/(T(Dt/2)2π) W=E/(T(Dt/2) 2 π)

在圖23中，係作為預脈衝雷射光P的照射條件，而展示有4種例子(情況1~情況4)。情況1~情況4，例如係想定為熔融錫之液滴的直徑為10μm、光強度分布為具備有特定之均一性的區域之直徑Dt為30μm的情況。為了使此種液滴擴散並形成所期望之擴散靶材，當將照射脈衝能量E以及脈衝時間寬幅T分別設定為0.3mJ以及20ns的情況(情況(case)1)時，係能夠得到2.12×109W/cm2之光強度W。藉由此種預脈衝雷射光，例如係成為能夠產生如圖2B中所示一般之擴散靶材。 In Fig. 23, as an irradiation condition of the pre-pulse laser light P, four examples (case 1 to case 4) are shown. In the case of the case 1 to the case 4, for example, the diameter of the droplet of molten tin is 10 μm, and the light intensity distribution is such that the diameter Dt of the region having the specific uniformity is 30 μm. In order to diffuse such droplets and form a desired diffusion target, when the irradiation pulse energy E and the pulse time width T are set to 0.3 mJ and 20 ns, respectively, (case 1), it is possible to obtain 2.12. ×10 9 W/cm 2 light intensity W. By such pre-pulsed laser light, for example, it is possible to produce a diffusion target as shown in Fig. 2B.

在圖23中所示之情況2，係為將照射脈衝能量E以及脈衝時間寬幅T分別設定為0.3mJ以及10ns的情況，於此情況，係能夠得到4.24×109W/cm2之光強度W。藉由此種預脈衝雷射光，例如係成為能夠產生如圖2B中所示一般之擴散靶材。 Case 2 shown in Fig. 23 is a case where the irradiation pulse energy E and the pulse time width T are set to 0.3 mJ and 10 ns, respectively, and in this case, light of 4.24 × 10 9 W/cm 2 can be obtained. Strength W. By such pre-pulsed laser light, for example, it is possible to produce a diffusion target as shown in Fig. 2B.

在圖23中所示之情況3，係為將照射脈衝能量E以 及脈衝時間寬幅T分別設定為0.3mJ以及0.1ns的情況，於此情況，係能夠得到4.24×1011W/cm2之光強度W。藉由此種預脈衝雷射光，例如係成為能夠產生如圖3B中所示一般之擴散靶材。 In the case 3 shown in Fig. 23, the irradiation pulse energy E and the pulse time width T are set to 0.3 mJ and 0.1 ns, respectively, and in this case, 4.24 × 10 11 W/cm 2 can be obtained. Light intensity W. By such pre-pulsed laser light, for example, it is possible to produce a diffusion target as shown in Fig. 3B.

在圖23中所示之情況4，係為將照射脈衝能量E以及脈衝時間寬幅T分別設定為0.5mJ以及0.05ns的情況，於此情況，係能夠得到1.41×1012W/cm2之光強度W。藉由此種預脈衝雷射光，例如係成為能夠產生如圖3B中所示一般之擴散靶材。如此這般，藉由將預脈衝雷射光一直短脈衝化至微微秒尺度，係能夠得到高的光強度W。 In the case 4 shown in Fig. 23, the irradiation pulse energy E and the pulse time width T are set to 0.5 mJ and 0.05 ns, respectively, and in this case, 1.41 × 10 12 W/cm 2 can be obtained. Light intensity W. By such pre-pulsed laser light, for example, it is possible to produce a diffusion target as shown in Fig. 3B. In this manner, a high light intensity W can be obtained by short-pulsing the pre-pulsed laser light to the picosecond scale.

在圖23中，雖係展示有針對10μm直徑之液滴的其中一例，但是，本發明，係並不被限定於此液滴直徑。例如，相對於16μm直徑之液滴，若是液滴之位置的安定性為△X=7μm，則亦可將具備有特定之均一性的區域之直徑Dt設為30μm。 In Fig. 23, although one example of droplets having a diameter of 10 μm is shown, the present invention is not limited to the droplet diameter. For example, if the stability of the position of the droplet is ΔX=7 μm with respect to the droplet of 16 μm diameter, the diameter Dt of the region having the specific uniformity may be 30 μm.

〈15.第9實施形態〉 <15. Ninth Embodiment>

圖24，係對於第9實施型態的EUV光產生裝置之構成作概略性展示。第9實施形態之EUV光產生裝置，係並未包含有預脈衝雷射裝置3(參考圖19)，而僅經由主脈衝雷射光M來將靶材物質電漿化，在此點上，係與參考圖19所說明了的第6實施形態之EUV光產生裝置相異。 Fig. 24 is a schematic view showing the configuration of an EUV light generating device of a ninth embodiment. The EUV light generating device according to the ninth embodiment does not include the pre-pulse laser device 3 (refer to FIG. 19), but only the main pulse laser light M is used to plasmaize the target material. It is different from the EUV light generating device of the sixth embodiment described with reference to Fig. 19 .

在第9實施形態中，修正光學元件41，係亦能夠以使主脈衝雷射光M之光強度分布成為存在有具備特定之均一 性的區域一般之分布的方式，來作修正。若依據此構成，則在主脈衝雷射光M之光強度為均一的範圍內，就算是液滴DL之位置有所改變，對於液滴DL之照射強度的變化亦僅需要小幅度變化即可。其結果，係能夠使所產生的電漿之密度的安定性提昇，並能夠將EUV光之強度的安定性提昇。關於其他各點，係可與第6實施型態相同。 In the ninth embodiment, the optical element 41 can be corrected so that the light intensity distribution of the main pulse laser light M can be made to have a specific uniformity. The way in which the sexual regions are generally distributed is corrected. According to this configuration, even if the position of the droplet DL is changed within the range in which the intensity of the main pulse laser light M is uniform, the change in the irradiation intensity of the droplet DL needs only a small change. As a result, the stability of the density of the generated plasma can be improved, and the stability of the EUV light intensity can be improved. The other points are the same as those of the sixth embodiment.

〈16.第10實施形態〉 <16. Tenth Embodiment>

圖25，係對於第10實施型態的EUV光產生裝置之構成作概略性展示。第10實施形態之EUV光產生裝置，係亦可具備有輸出預脈衝雷射光P以及主脈衝雷射光M之雙方的雷射裝置7。 Fig. 25 is a schematic view showing the configuration of an EUV light generating device of the tenth embodiment. The EUV light generating device according to the tenth embodiment may include a laser device 7 that outputs both the pre-pulse laser light P and the main pulse laser light M.

雷射裝置7，係亦可具備有第1主振盪器7a、和第2主振盪器7b、和光路調整器7c、和前放大器4c、和主放大器4e、和中繼光學系4b、4d以及4f。第1主振盪器7a，係亦可產生預脈衝雷射光P之種源光。第2主振盪器7b，係亦可產生主脈衝雷射光M之種源光。經由第1主振盪器7a以及第2主振盪器7b所產生的種源光，係以身為被包含於相同之波長區域中的雷射光為理想。光路調整器7c，係亦可將此些之種源光的光路以成為空間性地略一致的方式來作調整，並輸出至中繼光學系4b處。 The laser device 7 may include a first main oscillator 7a, a second main oscillator 7b, an optical path adjuster 7c, a preamplifier 4c, a main amplifier 4e, and relay optical systems 4b and 4d. 4f. The first main oscillator 7a can also generate seed light of the pre-pulse laser light P. The second main oscillator 7b can also generate seed light of the main pulsed laser light M. The seed light generated by the first main oscillator 7a and the second main oscillator 7b is preferably laser light that is included in the same wavelength region. The optical path adjuster 7c can adjust the optical paths of the source lights so as to be spatially slightly aligned, and output them to the relay optical system 4b.

從雷射裝置7所輸出之預脈衝雷射光P以及主脈衝雷射光M，係亦可均經由修正光學元件41，來以使光強度分布成為存在有具備特定之均一性的區域一般之分布的方式 ，來作修正。若是預脈衝雷射光P以及主脈衝雷射光M為被包含在相同之波長區域中的雷射光，則此些之雷射光，係可經由1個的修正光學元件41來對於光強度分布作修正。關於其他各點，係可與第6實施型態相同。 The pre-pulse laser light P and the main pulse laser light M outputted from the laser device 7 may also pass through the correcting optical element 41 so that the light intensity distribution becomes a general distribution of a region having a specific uniformity. the way , to make corrections. If the pre-pulse laser light P and the main pulse laser light M are laser light included in the same wavelength region, the laser light can be corrected for the light intensity distribution via the one correction optical element 41. The other points are the same as those of the sixth embodiment.

〈17.第11實施形態〉 <17. Eleventh embodiment> 〈17-1.構成〉 <17-1. Composition>

圖26，係為對於在第11實施型態的EUV光產生裝置中所使用的雷射裝置之構成作展示的概念圖。在第11實施型態中之雷射裝置8，例如，係亦可在上述第1~第10實施型態中，作為輸出用以使液滴DL擴散的預脈衝雷射光P之脈衝雷射裝置，而設置在腔室之外。 Fig. 26 is a conceptual diagram showing the configuration of a laser device used in the EUV light generating device of the eleventh embodiment. The laser device 8 in the eleventh embodiment may be, for example, a pulse laser device that outputs pre-pulse laser light P for diffusing droplets DL in the first to tenth embodiments. And set outside the chamber.

雷射裝置8，係亦可包含有主振盪器8a、和至少1個的放大器。至少1個的放大器，係亦可包含有前放大器8g、和主放大器8h。至少1個的放大器，係亦可被配置在從主振盪器8a所輸出之雷射光的光路上。 The laser device 8 may also include a main oscillator 8a and at least one amplifier. At least one amplifier may include a preamplifier 8g and a main amplifier 8h. At least one amplifier may be disposed on the optical path of the laser light output from the main oscillator 8a.

主振盪器8a，係亦可具備有：包含高反射鏡8b以及部分反射鏡8c之安定共振器、和雷射媒質8d。雷射媒質8d，係亦可被配置在高反射鏡8b和部分反射鏡8c之間。雷射媒質8d，係可為Nd：YAG之結晶、Yb：YAG之結晶等。此結晶，係可為圓柱狀，亦可為板狀。 The main oscillator 8a may include a stabilizer including a high mirror 8b and a partial mirror 8c, and a laser medium 8d. The laser medium 8d can also be disposed between the high mirror 8b and the partial mirror 8c. The laser medium 8d may be a crystal of Nd:YAG or a crystal of Yb:YAG. The crystal may be in the form of a cylinder or a plate.

高反射鏡8b以及部分反射鏡8c，係可為平面鏡，亦可為具有曲面之反射鏡。在安定共振器中之光路上，係亦可存在有被形成有至少1個的光孔(aperture)之構件。 被形成有至少1個的光孔之構件，係亦可包含有光孔板(aperture plate)8e以及8f。 The high mirror 8b and the partial mirror 8c may be a plane mirror or a mirror having a curved surface. In the optical path in the stabilized resonator, there may be a member in which at least one aperture is formed. The member formed with at least one optical hole may also include aperture plates 8e and 8f.

前放大器8g以及主放大器8h，係均可包含有雷射媒質。前放大器8g以及主放大器8h之雷射媒質8d，係可為Nd：YAG之結晶、Yb：YAG之結晶等。此結晶，係可為圓柱狀，亦可為板狀。 Both the front amplifier 8g and the main amplifier 8h may include a laser medium. The front amplifier 8g and the laser medium 8d of the main amplifier 8h may be a crystal of Nd:YAG or a crystal of Yb:YAG. The crystal may be in the form of a cylinder or a plate.

〈17-2.動作〉 <17-2. Action>

主振盪器8a之雷射媒質8d，若是藉由未圖示之激勵光源而被激勵，則包含高反射鏡8b以及部分反射鏡8c之安定共振器，係能夠以多橫向模態來進行雷射振盪。此時，因應於安定共振器中之被形成在光孔板8e以及8f處的光孔之形狀，係能夠對於以多橫向模態而振盪之雷射光的剖面形狀作變更。其結果，係能夠從主振盪器8a，而輸出在做了集光的情況時為具備有依存於光孔形狀之剖面形狀並且具備有高帽型之光強度分布的雷射光。從主振盪器8a所輸出之雷射光，係亦可構成為：經由至少1個的包含有藉由激勵光源而被激勵之雷射媒質的放大器，而被作放大，並經由集光光學系15來照射至液滴DL處。藉由此，就算是並不使用修正光學元件，亦能夠輸出具備有高帽型之光強度分布的雷射光。 The laser medium 8d of the main oscillator 8a is excited by an excitation light source (not shown), and the stable resonator including the high mirror 8b and the partial mirror 8c can perform laser in a plurality of lateral modes. oscillation. At this time, in accordance with the shape of the optical hole formed in the aperture plates 8e and 8f in the resonator, it is possible to change the cross-sectional shape of the laser light oscillated in a multi-transverse mode. As a result, it is possible to output, from the main oscillator 8a, laser light having a cross-sectional shape depending on the shape of the optical hole and having a high-hat type light intensity distribution. The laser light output from the main oscillator 8a may be configured to be amplified by at least one amplifier including a laser medium excited by the excitation light source, and passed through the collecting optics 15 To illuminate the droplet DL. Thereby, even if the correction optical element is not used, it is possible to output laser light having a high-hat type light intensity distribution.

當將安定共振器中之被形成在光孔板8e以及8f處的光孔設為矩形形狀的情況時，具備有高帽型之光強度分布的雷射光之剖面形狀，係能夠成為矩形。又，當將安定共 振器中之被形成在光孔板8e以及8f處的光孔設為圓形形狀的情況時，具備有高帽型之光強度分布的雷射光之剖面形狀，係能夠成為圓形。當液滴之位置的偏差為依存於方向而互為相異的情況時，亦可藉由使用被形成有長方形之光孔的光孔板8e以及8f，來將具備有高帽型之光強度分布的雷射光之剖面形狀設為長方形。如此這般，經由對於光孔之形狀作選定或者是作調節，係能夠對於經由集光光學系15所作了集光的具備有高帽型之光強度分布的雷射光之剖面形狀作調節。又，係並不被限定於使用有光孔的情況，亦可經由雷射媒質8d之剖面形狀，來對於雷射光之剖面形狀作控制。 When the optical apertures formed in the aperture plates 8e and 8f in the stabilizer are rectangular, the cross-sectional shape of the laser light having the high-hat type light intensity distribution can be rectangular. Also, when it will be stable In the case where the optical holes formed in the aperture plates 8e and 8f in the vibrator are formed in a circular shape, the cross-sectional shape of the laser light having the high-hat type light intensity distribution can be circular. When the deviation of the position of the droplets is different depending on the direction, the light intensity of the high-hat type can be obtained by using the aperture plates 8e and 8f in which the rectangular apertures are formed. The cross-sectional shape of the distributed laser light is set to be a rectangle. In this manner, by selecting or adjusting the shape of the light hole, it is possible to adjust the cross-sectional shape of the laser beam having the high-hat type light intensity distribution collected by the collecting optical system 15 . Further, it is not limited to the case where a light hole is used, and the cross-sectional shape of the laser medium 8d can be controlled to control the cross-sectional shape of the laser light.

〈18.通量之控制〉 <18. Control of flux>

圖27，係為在上述之實施形態中，將與預脈衝雷射光之通量(在集光點處之光束剖面的每單位面積之能量)相對應的CE之測定值作了描繪的圖表。 Fig. 27 is a graph in which the measured value of CE corresponding to the flux of the pre-pulse laser light (the energy per unit area of the beam profile at the light collecting point) is plotted in the above embodiment.

測定條件，係如下所述。作為靶材物質，係使用直徑20μm之熔融錫的液滴。作為預脈衝雷射光，係使用了由YAG雷射所得之脈衝寬幅5ns~15ns的雷射光。作為主脈衝雷射光，係使用了由CO2雷射所得之脈衝寬幅20ns的雷射光。主脈衝雷射光之光強度，係設為6.0×109W/cm2，並將從預脈衝雷射光之照射後起直到主脈衝雷射光之照射為止的延遲時間，設為1.5μs。 The measurement conditions are as follows. As the target material, droplets of molten tin having a diameter of 20 μm were used. As the pre-pulse laser light, a laser beam having a pulse width of 5 ns to 15 ns obtained by a YAG laser is used. As the main pulse laser light, a laser beam having a pulse width of 20 ns obtained by a CO 2 laser is used. The intensity of the main pulsed laser light was set to 6.0 × 10 9 W/cm 2 , and the delay time from the irradiation of the pre-pulse laser light to the irradiation of the main pulse laser light was set to 1.5 μs .

圖27中所示之圖表的橫軸，係為對於將預脈衝雷射 光之照射條件(脈衝寬幅、能量、集光面積)換算成通量後的值作展示。又，縱軸，係對於將前述之主脈衝雷射光以略相同之條件來對於在預脈衝雷射光之各照射條件下所產生的擴散靶材進行了照射的情況時之CE作展示。 The horizontal axis of the graph shown in Figure 27 is for the pre-pulse laser The light irradiation condition (pulse width, energy, and collection area) is converted into a value after the flux is displayed. Further, the vertical axis is shown in the case where the above-described main pulse laser light is irradiated to the diffusion target generated under the respective irradiation conditions of the pre-pulse laser light under slightly the same conditions.

根據圖27中所示之測定結果，可以得知，若是將預脈衝雷射光之通量增高，則CE係能夠提昇至3%之程度。亦即是，可以得知，至少在預脈衝雷射光之脈衝寬幅為5ns~15ns的範圍內，通量與CE之間係存在有相關。 From the measurement results shown in Fig. 27, it can be seen that if the flux of the pre-pulse laser light is increased, the CE system can be raised to 3%. That is, it can be known that there is a correlation between the flux and the CE at least in the range of the pulse width of the pre-pulse laser light from 5 ns to 15 ns.

故而，在上述之實施形態中，亦可構成為並非對於預脈衝雷射光之光強度作控制，而是對於通量作控制。根據圖27中所示之測定結果，可以得知，預脈衝雷射光之通量，係以成為10mJ/cm2~600mJ/cm2的範圍為理想。又，係以30mJ/cm2~400mJ/cm2的範圍為更理想。進而，又以150mJ/cm2~300mJ/cm2的範圍為更加理想。 Therefore, in the above-described embodiment, the light intensity of the pre-pulse laser light may not be controlled, but the flux may be controlled. From the measurement results shown in Fig. 27, it is understood that the flux of the pre-pulse laser light is preferably in the range of 10 mJ/cm 2 to 600 mJ/cm 2 . Further, it is more preferably in the range of 30 mJ/cm 2 to 400 mJ/cm 2 . Further, it is more preferably in the range of 150 mJ/cm 2 to 300 mJ/cm 2 .

根據若是在將預脈衝雷射光之通量控制於上述一般之範圍內的情況時則CE會有所提昇的測定結果，可以推測到，在此條件下，靶材物質之液滴係擴散為圓盤狀或碟狀、或者是環體狀。亦即是，可以推測到，液滴係擴散，而總表面積係變大，其結果，主脈衝雷射光之能量係有效率地被擴散後的微粒子所吸收，因此，CE係作了提昇。 According to the measurement result that the CE is improved when the flux of the pre-pulse laser light is controlled within the above-described general range, it can be inferred that under this condition, the droplet of the target substance diffuses into a circle. Disc or dish, or ring shape. That is, it can be inferred that the droplets are diffused and the total surface area is increased. As a result, the energy of the main pulsed laser light is efficiently absorbed by the diffused fine particles, and therefore the CE system is improved.

〈19.延遲時間之控制〉 <19. Control of delay time>

圖28，係為在上述之實施形態中，將與從照射了預脈衝雷射光後起直到主脈衝雷射光被作照射為止的延遲時間 相對應的CE之測定值，在靶材物質之每一液滴直徑處而作了描繪的圖表。 Figure 28 is a diagram showing the delay time from the time when the pre-pulse laser light is irradiated until the main pulse laser light is irradiated in the above embodiment. The corresponding measured value of CE is plotted on the diameter of each droplet of the target material.

測定條件，係如下所述。作為靶材物質，係使用直徑12μm、20μm、30μm以及40μm之熔融錫的液滴。作為預脈衝雷射光，係使用了由YAG雷射所得之脈衝寬幅5ns的雷射光。預脈衝雷射光之通量，係設為490mJ/cm2。作為主脈衝雷射光，係使用了由CO2雷射所得之脈衝寬幅20ns的雷射光。主脈衝雷射光之光強度，係設為6.0×109W/cm2。 The measurement conditions are as follows. As the target material, droplets of molten tin having a diameter of 12 μm, 20 μm, 30 μm, and 40 μm were used. As the pre-pulse laser light, a laser beam having a width of 5 ns which is obtained by a YAG laser is used. The flux of the pre-pulse laser light is set to 490 mJ/cm 2 . As the main pulse laser light, a laser beam having a pulse width of 20 ns obtained by a CO 2 laser is used. The light intensity of the main pulsed laser light was set to 6.0 × 10 9 W/cm 2 .

根據圖28中所示之測定結果，可以得知，從照射了預脈衝雷射光之後起直到照射主脈衝雷射光為止的延遲時間，係以成為0.5μs~2.5μs的範圍為理想。但是，亦得知了，在靶材物質之每一液滴直徑處，用以得到高CE之主脈衝雷射光的延遲時間之最適當範圍，係會有互為相異的可能性。 According to the measurement results shown in FIG. 28, it is understood that the delay time from the irradiation of the pre-pulse laser light to the irradiation of the main pulse laser light is preferably in the range of 0.5 μs to 2.5 μs. However, it is also known that at each droplet diameter of the target material, the most appropriate range of delay times for obtaining high-CE main-pulse laser light may be mutually different.

當液滴直徑為12μm的情況時，從照射了預脈衝雷射光之後起直到照射主脈衝雷射光為止的延遲時間，係以成為0.5μs~2μs的範圍為理想。又，係以0.6μs~1.5μs的範圍為更理想。進而，又以0.7μs~1μs的範圍為更加理想。 When the droplet diameter is 12 μm, the delay time from the irradiation of the pre-pulse laser light to the irradiation of the main pulse laser light is preferably in the range of 0.5 μs to 2 μs. Further, it is more preferably in the range of 0.6 μs to 1.5 μs. Further, it is more preferably in the range of 0.7 μs to 1 μs.

當液滴直徑為20μm的情況時，從照射了預脈衝雷射光之後起直到照射主脈衝雷射光為止的延遲時間，係以成為0.5μs~2.5μs的範圍為理想。又，係以1μs~2μs的範圍為更理想。進而，又以1.3μs~1.7μs的範圍為更加理想。 When the droplet diameter is 20 μm, the delay time from the irradiation of the pre-pulse laser light to the irradiation of the main pulse laser light is preferably in the range of 0.5 μs to 2.5 μs. Further, it is more preferably in the range of 1 μs to 2 μs. Further, it is more preferably in the range of 1.3 μs to 1.7 μs.

當液滴直徑為30μm的情況時，從照射了預脈衝雷射光之後起直到照射主脈衝雷射光為止的延遲時間，係以成為0.5μs~4μs的範圍為理想。又，係以1.5μs~3.5μs的範圍為更理想。進而，又以2μs~3μs的範圍為更加理想。 When the droplet diameter is 30 μm, the delay time from the irradiation of the pre-pulse laser light to the irradiation of the main pulse laser light is preferably in the range of 0.5 μs to 4 μs. Further, it is more preferably in the range of 1.5 μs to 3.5 μs. Further, it is more preferably in the range of 2 μs to 3 μs.

當液滴直徑為40μm的情況時，從照射了預脈衝雷射光之後起直到照射主脈衝雷射光為止的延遲時間，係以成為0.5μs~6μs的範圍為理想。又，係以1.5μs~5μs的範圍為更理想。進而，又以2μs~4μs的範圍為更加理想。 When the droplet diameter is 40 μm, the delay time from the irradiation of the pre-pulse laser light to the irradiation of the main pulse laser light is preferably in the range of 0.5 μs to 6 μs. Further, it is more preferably in the range of 1.5 μs to 5 μs. Further, it is more preferably in the range of 2 μs to 4 μs.

可以推測到，藉由將從照射了預脈衝雷射光之後起直到照射主脈衝雷射光為止的延遲時間，控制在如同上述一般的範圍內，靶材物質之液滴，係被擴散為充分細微之微粒子。又，可以推測到，液滴係擴散，而總表面積係變大，其結果，主脈衝雷射光之能量係有效率地被擴散後的微粒子所吸收，因此，CE係作了提昇。 It can be inferred that by the delay time from the irradiation of the pre-pulse laser light until the irradiation of the main pulse laser light, it is controlled that the droplet of the target substance is diffused into a sufficiently fine as in the above-described general range. Microparticles. Further, it can be inferred that the droplets are diffused and the total surface area is increased. As a result, the energy of the main pulsed laser light is efficiently absorbed by the diffused fine particles, so that the CE system is improved.

上述之說明，係並非為用以作限定者，而僅為單純之例示。故而，對於同業者而言，應可明顯得知，在不脫離所添附之申請專利範圍的前提下，係可對於本發明之實施形態施加變更。 The above description is not intended to be limiting, but is merely exemplary. Therefore, it should be apparent to those skilled in the art that modifications may be made to the embodiments of the invention without departing from the scope of the appended claims.

在本說明書以及所添附之申請專利範圍全體中所使用的用語，係並不應將其解釋為限定性之用語。例如，所謂的「包含」或者是「被包含」之用語，係應解釋為「並不被限定於作為所包含之物而作了記載的內容」。所謂的「具有」之用語，係應解釋為「並不被限定於作為所具有之物而作了記載的內容」。又，在本說明書以及所添附之申 請專利範圍中所記載的修飾句「1個的」，應解釋為「至少1個」或者是「1或是其以上」。 The terms used in the specification and the appended claims are not to be construed as limiting. For example, the term "included" or "included" is to be interpreted as "not limited to what is included as an object of inclusion". The term "having" is to be interpreted as "not limited to what is recorded as a possession." Also, in this manual and the attached application The modified sentence "one" described in the patent scope shall be interpreted as "at least one" or "1 or more".

DL‧‧‧液滴 DL‧‧‧ droplets

Dd‧‧‧液滴之直徑 Dd‧‧‧Drop diameter

De‧‧‧擴散靶材之直徑 De‧‧‧Diffusion target diameter

Dm‧‧‧主脈衝雷射光之光束直徑(照射點直徑) Dm‧‧‧ Beam diameter of main pulse laser light (radiation point diameter)

Dt‧‧‧具備有特定之均一性的區域之直徑 Dt‧‧‧ diameter of the area with specific homogeneity

IF‧‧‧中間集光點 IF‧‧‧ intermediate light spot

M‧‧‧主脈衝雷射光 M‧‧‧ main pulse laser light

P‧‧‧預脈衝雷射光 P‧‧‧Pre-pulse laser light

P1~P6‧‧‧峰值 P1~P6‧‧‧ peak

△P‧‧‧峰值間之間隔 △P‧‧‧ interval between peaks

PS‧‧‧電漿產生區域 PS‧‧‧plasma generation area

1‧‧‧腔室 1‧‧‧ chamber

2‧‧‧靶材供給部 2‧‧‧ Target Supply Department

3‧‧‧預脈衝雷射裝置 3‧‧‧Pre-pulse laser device

4‧‧‧主脈衝雷射裝置 4‧‧‧ main pulse laser device

4a‧‧‧主振盪器 4a‧‧‧Main Oscillator

4b、4d、4f‧‧‧中繼光學系 4b, 4d, 4f‧‧‧ Relay optical system

4c‧‧‧前放大器 4c‧‧‧Preamplifier

4e‧‧‧主放大器 4e‧‧‧ main amplifier

5‧‧‧EUV集光鏡 5‧‧‧EUV concentrator

6a、6b‧‧‧磁石 6a, 6b‧‧‧ magnet

6c‧‧‧電源裝置 6c‧‧‧Power supply unit

6d‧‧‧電源控制器 6d‧‧‧Power Controller

7‧‧‧雷射裝置 7‧‧‧ Laser device

7a‧‧‧第1主振盪器 7a‧‧‧1st main oscillator

7b‧‧‧第2主振盪器 7b‧‧‧2nd main oscillator

7c‧‧‧光路調整器 7c‧‧‧Light path adjuster

8‧‧‧雷射裝置 8‧‧‧ Laser device

8a‧‧‧主振盪器 8a‧‧‧Main Oscillator

8b‧‧‧高反射鏡 8b‧‧‧High Mirror

8c‧‧‧部分反射鏡 8c‧‧‧partial mirror

8d‧‧‧雷射媒質 8d‧‧‧Laser media

8e、8f‧‧‧光孔板 8e, 8f‧‧‧ aperture plate

8g‧‧‧前放大器 8g‧‧‧ front amplifier

8h‧‧‧主放大器 8h‧‧‧ main amplifier

11‧‧‧曝光裝置連接埠 11‧‧‧Exposure device connection埠

12‧‧‧窗 12‧‧‧ window

13‧‧‧靶材噴嘴 13‧‧‧ target nozzle

14‧‧‧靶材回收部 14‧‧‧ Target Recycling Department

15‧‧‧集光光學系 15‧‧‧Collection of Optics

15a‧‧‧光束集聚器 15a‧‧‧beam agglomerator

15b、15d、15f‧‧‧離軸拋物面鏡 15b, 15d, 15f‧‧‧ off-axis parabolic mirror

15c、15e‧‧‧高反射鏡 15c, 15e‧‧‧ high mirror

15g‧‧‧集光光學系 15g‧‧‧Collection Optics

19a、19b‧‧‧離子回收部 19a, 19b‧‧‧Ion Recovery Department

20‧‧‧EUV光產生裝置 20‧‧‧EUV light generating device

21a、21b‧‧‧開口 21a, 21b‧‧‧ openings

30‧‧‧光束擴展器 30‧‧‧beam expander

30g‧‧‧集光光學系 30g‧‧‧Collection Optics

31‧‧‧修正光學元件 31‧‧‧Correct optical components

31a‧‧‧繞射光學元件 31a‧‧‧Diffractive optical components

31b‧‧‧相位橫移光學系 31b‧‧‧ phase traverse optical system

31c‧‧‧縮小投影光學系 31c‧‧‧Reducing the projection optics

31d‧‧‧科勒照明光學系 31d‧‧ ‧ Kohler Lighting Optics

31e‧‧‧多模光纖 31e‧‧‧Multimode fiber

32‧‧‧遮罩 32‧‧‧ mask

33‧‧‧光學元件 33‧‧‧Optical components

34‧‧‧蠅眼透鏡 34‧‧‧Flying eye lens

41‧‧‧修正光學元件 41‧‧‧Correct optical components

50a‧‧‧鈦藍寶石雷射 50a‧‧‧ Titanium sapphire laser

50b‧‧‧光纖雷射 50b‧‧‧ fiber laser

51a‧‧‧半導體可飽和吸收鏡 51a‧‧‧Semiconductor saturable absorption mirror

51b‧‧‧高反射鏡 51b‧‧‧High Mirror

52a‧‧‧輸出耦合鏡 52a‧‧‧Output coupling mirror

52b‧‧‧半導體可飽和吸收鏡 52b‧‧‧Semiconductor saturable absorption mirror

53a‧‧‧凹面鏡 53a‧‧‧ concave mirror

53b‧‧‧光柵對 53b‧‧‧raster pair

54a‧‧‧第1泵送用鏡 54a‧‧‧1st pumping mirror

54b‧‧‧第1偏光維持光纖 54b‧‧‧1st polarization maintaining fiber

55a‧‧‧鈦藍寶石結晶 55a‧‧‧ Titanium sapphire crystal

55b‧‧‧多工器 55b‧‧‧Multiplexer

56a‧‧‧第2泵送用鏡 56a‧‧‧2nd pumping mirror

56b‧‧‧分離元件 56b‧‧‧Separate components

57a‧‧‧稜鏡 57a‧‧‧稜鏡

57b‧‧‧第2偏光維持光纖 57b‧‧‧2nd polarization maintaining fiber

58b‧‧‧集光光學系 58b‧‧‧Lighting Optics

59a‧‧‧激勵光源 59a‧‧‧Excited light source

59b‧‧‧激勵光源 59b‧‧‧Excited light source

70‧‧‧液滴Z方向檢測器 70‧‧‧Drop Z-direction detector

71‧‧‧雷射觸發產生機構 71‧‧‧Laser trigger generating mechanism

80‧‧‧液滴XY方向檢測器 80‧‧‧Drop XY Direction Detector

81‧‧‧液滴XY控制器 81‧‧‧Drop XY Controller

82‧‧‧液滴XY控制機構 82‧‧‧Drop XY Control Mechanism

[圖1]圖1A~圖1C，係為對於本發明中之技術課題例作說明的圖。 Fig. 1A to Fig. 1C are diagrams for explaining an example of the technical problem in the present invention.

[圖2]圖2A~圖2C，係為對於本發明中之將預脈衝(pre-pulse)雷射光照射至液滴(droplet)處時的靶材物質之舉動的例子作展示之圖。 2A to 2C are diagrams showing an example of the behavior of a target substance when a pre-pulse laser light is irradiated to a droplet in the present invention.

[圖3]圖3A~圖3C，係為對於本發明中之將預脈衝雷射光照射至液滴處時的靶材物質之舉動的之其他例子作展示之圖。 3A to 3C are diagrams showing another example of the behavior of the target material when the pre-pulsed laser light is irradiated to the droplet at the present invention.

[圖4]圖4A以及圖4B，係為從光束之軸方向而對於本發明中之液滴直徑和光束直徑間的關係作觀察之圖。 4A and 4B are views for observing the relationship between the droplet diameter and the beam diameter in the present invention from the axial direction of the light beam.

[圖5]圖5，係為針對本發明中之相關於液滴之分布參差的△X之值的設定例作展示之表。 Fig. 5 is a table showing a setting example of the value of ΔX with respect to the distribution variation of the droplets in the present invention.

[圖6]圖6，係為從光束之軸方向而對於本發明中之位置的偏差方向和光束直徑間的關係作觀察之圖。 Fig. 6 is a view for observing the relationship between the deviation direction and the beam diameter of the position in the present invention from the axial direction of the light beam.

[圖7]圖7A~圖7C，係為對於本發明中之預脈衝雷射光的光強度分布之例作說明的圖。 Fig. 7A to Fig. 7C are diagrams for explaining an example of a light intensity distribution of pre-pulsed laser light in the present invention.

[圖8]圖8，係為用以針對被照射至靶材物質處的雷射光之光強度分布作說明的圖。 Fig. 8 is a view for explaining a light intensity distribution of laser light irradiated to a target substance.

[圖9]圖9，係為對於第1實施型態的EUV光產生裝置之構成作概略性展示的圖。 Fig. 9 is a view schematically showing the configuration of an EUV light generating device of the first embodiment.

[圖10]圖10，係為對相關於修正光學元件之其中一例作展示的概念圖。 Fig. 10 is a conceptual diagram showing an example of a correction optical element.

[圖11]圖11，係為對相關於修正光學元件之其他例作展示的概念圖。 Fig. 11 is a conceptual diagram showing another example relating to a modified optical element.

[圖12]圖12，係為對相關於修正光學元件之又一其他例作展示的概念圖。 Fig. 12 is a conceptual diagram showing still another example of the correction optical element.

[圖13]圖13，係為對相關於修正光學元件之又一其他例作展示的概念圖。 Fig. 13 is a conceptual diagram showing still another example of the correction optical element.

[圖14]圖14，係為對相關於修正光學元件之又一其他例作展示的概念圖。 Fig. 14 is a conceptual diagram showing still another example of the correction optical element.

[圖15]圖15，係為對於第2實施型態的EUV光產生裝置之構成作概略性展示的圖。 Fig. 15 is a view schematically showing the configuration of an EUV light generating device of a second embodiment.

[圖16]圖16A，係為對於第3實施型態的EUV光產生裝置之構成作概略性展示的圖，圖16B，係為圖16A中所示之EUV光產生裝置的XVIB-XVIB面處之剖面圖。 Fig. 16A is a view schematically showing the configuration of an EUV light generating device of a third embodiment, and Fig. 16B is an XVIB-XVIB face of the EUV light generating device shown in Fig. 16A. Sectional view.

[圖17]圖17，係為對於第4實施型態的EUV光產生裝置之構成作概略性展示的圖。 Fig. 17 is a view schematically showing the configuration of an EUV light generating device of a fourth embodiment.

[圖18]圖18A，係為對於第5實施型態的EUV光產生裝置之構成作概略性展示的圖，圖18B，係為圖18A中所示之EUV光產生裝置的XVIIIB-XVIIIB面處之剖面圖。 Fig. 18A is a view schematically showing the configuration of an EUV light generating device of a fifth embodiment, and Fig. 18B is a XVIIIB-XVIIIB face of the EUV light generating device shown in Fig. 18A. Sectional view.

[圖19]圖19，係為對於第6實施型態的EUV光產生裝置之構成作概略性展示的圖。 Fig. 19 is a view schematically showing the configuration of an EUV light generating device of a sixth embodiment.

[圖20]圖20A，係為對於對液滴而照射了預脈衝雷射 光的模樣作展示之概念圖，圖20B以及圖20C，係為對於對經由對於液滴而照射了預脈衝雷射光所形成的環體(torus)型之擴散靶材而照射具備有頂帽(top-hat)型之光強度分布的主脈衝(main pulse)雷射光之模樣作展示的概念圖。 [Fig. 20] Fig. 20A is for irradiating a pre-pulse laser to a droplet FIG. 20B and FIG. 20C are diagrams for irradiating a diffusing target of a torus type formed by irradiating pre-pulsed laser light with respect to a droplet, and having a top hat ( The top-hat type of light intensity distribution of the main pulse laser light is used as a conceptual diagram for display.

[圖21]圖21，係為對於在第7實施型態的EUV光產生裝置中而輸出預脈衝雷射光的鈦藍寶石雷射(titanium sapphire laser)之構成例作展示的概念圖。 [Fig. 21] Fig. 21 is a conceptual diagram showing a configuration example of a titanium sapphire laser that outputs pre-pulse laser light in the EUV light generating device of the seventh embodiment.

[圖22]圖22，係為對於在第8實施型態的EUV光產生裝置中而輸出預脈衝雷射光的光纖雷射(fiber laser)之構成例作展示的概念圖。 [ Fig. 22] Fig. 22 is a conceptual diagram showing a configuration example of a fiber laser that outputs pre-pulse laser light in the EUV light generating device of the eighth embodiment.

[圖23]圖23，係為對於本發明中之預脈衝雷射光的照射條件之例作展示的表。 Fig. 23 is a table showing an example of irradiation conditions of pre-pulsed laser light in the present invention.

[圖24]圖24，係為對於第9實施型態的EUV光產生裝置之構成作概略性展示的圖。 Fig. 24 is a view schematically showing the configuration of an EUV light generating device of a ninth embodiment.

[圖25]圖25，係為對於第10實施型態的EUV光產生裝置之構成作概略性展示的圖。 Fig. 25 is a view schematically showing the configuration of an EUV light generating device of a tenth embodiment.

[圖26]圖26，係為對於在第11實施型態的EUV光產生裝置中所使用的雷射裝置之構成例作展示的概念圖。 [ Fig. 26] Fig. 26 is a conceptual diagram showing a configuration example of a laser device used in the EUV light generating device of the eleventh embodiment.

[圖27]圖27，係為在上述之實施形態中，將與預脈衝雷射光之通量(fluence)相對應的CE之測定值作了描繪(plot)的圖表(graph)。 Fig. 27 is a graph showing a measurement of a measured value of CE corresponding to a fluence of pre-pulse laser light in the above embodiment.

[圖28]圖28，係為在上述之實施形態中，將與從照射了預脈衝雷射光後起直到主脈衝雷射光被作照射為止的延 遲時間相對應的CE之測定值，在靶材物質之每一液滴直徑處而作了描繪的圖表。 [Fig. 28] Fig. 28 is an extension of the above embodiment, from the time when the pre-pulse laser light is irradiated until the main pulse laser light is irradiated. The measured value of CE corresponding to the late time is plotted on the diameter of each droplet of the target material.

DL‧‧‧液滴 DL‧‧‧ droplets

PS‧‧‧電漿產生區域 PS‧‧‧plasma generation area

1‧‧‧腔室 1‧‧‧ chamber

2‧‧‧靶材供給部 2‧‧‧ Target Supply Department

3‧‧‧預脈衝雷射裝置 3‧‧‧Pre-pulse laser device

4‧‧‧主脈衝雷射裝置 4‧‧‧ main pulse laser device

4a‧‧‧主振盪器 4a‧‧‧Main Oscillator

4b、4d、4f‧‧‧中繼光學系 4b, 4d, 4f‧‧‧ Relay optical system

4c‧‧‧前放大器 4c‧‧‧Preamplifier

4e‧‧‧主放大器 4e‧‧‧ main amplifier

5‧‧‧EUV集光鏡 5‧‧‧EUV concentrator

11‧‧‧曝光裝置連接埠 11‧‧‧Exposure device connection埠

12‧‧‧窗 12‧‧‧ window

13‧‧‧靶材噴嘴 13‧‧‧ target nozzle

14‧‧‧靶材回收部 14‧‧‧ Target Recycling Department

15a‧‧‧光束集聚器 15a‧‧‧beam agglomerator

15b‧‧‧離軸拋物面鏡 15b‧‧‧ off-axis parabolic mirror

20‧‧‧EUV光產生裝置 20‧‧‧EUV light generating device

21a‧‧‧開口 21a‧‧‧ Opening

30‧‧‧光束擴展器 30‧‧‧beam expander

31‧‧‧修正光學元件 31‧‧‧Correct optical components

Claims (15)

一種腔室裝置，係為被與至少1個的雷射裝置一同作使用之腔室裝置，其特徵為，具備有：腔室，係被設置有用以將從前述至少1個的雷射裝置所輸出之至少1個的雷射光導入至內部的至少1個的射入口；和靶材供給部，係被設置在前述腔室內，並用以對於前述腔室內之特定的區域而供給靶材物質；和雷射集光光學系，係用以將前述至少1個的雷射光集光於前述特定之區域處；和光學元件，係用以對於前述至少1個的雷射光之在前述特定之區域處的光束剖面之光強度分布作修正。 A chamber device is a chamber device for use with at least one laser device, characterized in that it is provided with a chamber that is provided to be used from at least one of the aforementioned laser devices At least one of the output laser light is introduced into at least one of the internal injection ports; and a target supply unit is provided in the chamber for supplying the target substance to a specific region in the chamber; and a laser collecting optical system for collecting at least one of the aforementioned laser light at the specific region; and an optical element for the at least one of the at least one of the laser light at the specific region The light intensity distribution of the beam profile is corrected. 如申請專利範圍第1項所記載之腔室裝置，其中，前述光學元件，係以使前述至少1個的雷射光之在前述特定之區域處的前述光束剖面之前述光強度分布成為在前述光束剖面之特定的區域處而具備有特定之均一性的方式，來對於前述光強度分布作修正。 The chamber device according to claim 1, wherein the optical element has the light intensity distribution of the beam profile of the at least one of the at least one laser light in the specific region at the light beam The light intensity distribution is corrected by providing a specific uniformity at a specific region of the cross section. 如申請專利範圍第2項所記載之腔室裝置，其中，前述特定之區域的面積，係為超過前述腔室內之前述特定之區域處的前述靶材物質之在與前述至少1個的雷射光之前進方向相垂直的剖面上的最大面積之大小。 The chamber device according to claim 2, wherein the area of the specific region is at least one of the laser light of the target material exceeding the specific region in the chamber. The size of the largest area on the section perpendicular to the forward direction. 如申請專利範圍第2項所記載之腔室裝置，其中，在與前述雷射光之前進方向相垂直的方向上之前述特定之區域的尺寸之最小值，係為在前述腔室內之前述特定之 區域處的前述靶材物質之在前述相垂直之方向上的尺寸之最大值上，再加上了前述特定之區域處的前述靶材物質之位置的偏差之範圍後的值以上之大小。 The chamber device according to claim 2, wherein a minimum value of the size of the specific region in a direction perpendicular to the forward direction of the laser light is the aforementioned specific one in the chamber The maximum value of the size of the target material in the direction perpendicular to the phase in the region is equal to or greater than the value of the range of the deviation of the position of the target material at the specific region. 如申請專利範圍第2項所記載之腔室裝置，其中，在前述特定之區域中，最低之光強度和最高之光強度之間的差，係成為前述最低之光強度和前述最高之光強度其兩者之和的20%以下。 The chamber device according to claim 2, wherein, in the specific region, a difference between the lowest light intensity and the highest light intensity is the lowest light intensity and the highest light intensity The sum of the two is less than 20%. 如申請專利範圍第1項所記載之腔室裝置，其中，被供給至前述腔室內之靶材物質，係為液滴(droplet)。 The chamber device according to claim 1, wherein the target material supplied into the chamber is a droplet. 如申請專利範圍第1項所記載之腔室裝置，其中，前述靶材物質，係包含有金屬。 The chamber device according to claim 1, wherein the target material contains a metal. 如申請專利範圍第1項所記載之腔室裝置，其中，前述至少1個的雷射光，係包含有：對於被供給至前述腔室內之前述靶材物質作照射之預脈衝雷射光、和對於被照射有前述預脈衝雷射光之靶材物質作照射之主脈衝雷射光，前述光學元件，係對於前述預脈衝雷射光之前述光強度分布作修正。 The chamber device according to claim 1, wherein the at least one of the laser beams includes pre-pulsed laser light that is irradiated to the target material supplied into the chamber, and The main pulsed laser beam is irradiated with the target material of the pre-pulsed laser light, and the optical element is corrected for the light intensity distribution of the pre-pulse laser light. 如申請專利範圍第8項所記載之腔室裝置，其中，前述主脈衝雷射光之在前述特定之區域處的光束剖面之面積，係為超過被照射有前述預脈衝雷射光之前述靶材物質的在與前述主脈衝雷射光之前進方向相垂直的剖面上的 最大面積之大小。 The chamber device of claim 8, wherein the area of the beam profile of the main pulsed laser light at the specific region is greater than the target material irradiated with the pre-pulse laser light On a section perpendicular to the forward direction of the aforementioned main pulsed laser light The size of the largest area. 如申請專利範圍第8項所記載之腔室裝置，其中，前述主脈衝雷射光之在前述特定之區域處的光束剖面之尺寸的最小值，係為被照射有前述預脈衝雷射光之前述靶材物質的在與前述主脈衝雷射光的前進方向相垂直之方向上的尺寸之最大值上，再加上了被照射有前述預脈衝雷射光之前述靶材物質的位置之偏差之範圍後的值以上之大小。 The chamber device according to claim 8, wherein the minimum value of the size of the beam profile of the main pulsed laser light at the specific region is the target irradiated with the pre-pulse laser light The maximum value of the dimension of the material in the direction perpendicular to the advancing direction of the main pulsed laser light, plus the range of the deviation of the position of the target material irradiated with the pre-pulse laser light The value is above the size. 如申請專利範圍第1項所記載之腔室裝置，其中，前述至少1個的雷射光，係包含有：對於被供給至前述腔室內之前述靶材物質作照射之預脈衝雷射光、和對於被照射有前述預脈衝雷射光之靶材物質作照射之主脈衝雷射光，前述預脈衝雷射光和前述主脈衝雷射光，係從略同一之方向而射入至前述腔室內。 The chamber device according to claim 1, wherein the at least one of the laser beams includes pre-pulsed laser light that is irradiated to the target material supplied into the chamber, and The main pulsed laser light irradiated with the target material of the pre-pulse laser light is irradiated, and the pre-pulse laser light and the main pulse laser light are incident into the chamber from the same direction. 一種極端紫外光產生裝置，其特徵為，具備有：至少1個的雷射裝置；和腔室，係被設置有用以將從前述至少1個的雷射裝置所輸出之至少1個的雷射光導入至內部的至少1個的射入口；和靶材供給部，係被設置在前述腔室內，並用以對於前述腔室內之特定的區域而供給靶材物質；和雷射集光光學系，係用以將前述至少1個的雷射光集 光於前述特定之區域處；和光學元件，係用以對於前述至少1個的雷射光之在集光位置處的光束剖面之光強度分布作修正；和雷射控制部，係用以對於前述雷射裝置處之前述至少1個的雷射光之輸出時序作控制。 An extreme ultraviolet light generating device comprising: at least one laser device; and a chamber provided with at least one laser light outputted from the at least one laser device At least one injection port introduced into the interior; and a target supply unit provided in the chamber for supplying a target substance to a specific region in the chamber; and a laser collecting optical system For using at least one of the aforementioned laser light sets Illuminating the specific region; and the optical element for correcting the light intensity distribution of the beam profile at the light collecting position of the at least one of the aforementioned laser light; and the laser control portion for The output timing of the aforementioned at least one laser light at the laser device is controlled. 如申請專利範圍第12項所記載之極端紫外光產生裝置，其中，前述至少1個的雷射光，係包含有：對於被供給至前述腔室內之前述靶材物質作照射之預脈衝雷射光、和對於被照射有前述預脈衝雷射光之靶材物質作照射之主脈衝雷射光，前述預脈衝雷射光之光強度，係為6.4×109W/cm2以上、3.2×1010W/cm2以下，前述雷射控制部，係以會在從前述預脈衝雷射光被照射至前述靶材物質處的時間點起而經過了0.5~2μS之範圍內的時序處，而使前述主脈衝雷射光對於被照射有前述預脈衝雷射光之前述靶材物質作照射的方式，來對於前述主脈衝雷射光之前述輸出時序作控制。 The extreme ultraviolet light generating device according to claim 12, wherein the at least one of the laser light includes pre-pulsed laser light that is irradiated to the target material supplied to the chamber, And the main pulsed laser light irradiated to the target material irradiated with the pre-pulse laser light, the light intensity of the pre-pulse laser light is 6.4×10 9 W/cm 2 or more and 3.2×10 10 W/cm. (2) The laser control unit is configured such that the main control unit passes through the time range from 0.5 to 2 μs from the time when the pre-pulse laser light is irradiated onto the target substance. The pulsed laser light controls the output timing of the main pulsed laser light by irradiating the target material irradiated with the pre-pulse laser light. 如申請專利範圍第12項所記載之極端紫外光產生裝置，其中，前述至少1個的雷射光，係包含有：對於被供給至前述腔室內之前述靶材物質作照射之預脈衝雷射光、和對於被照射有前述預脈衝雷射光之靶材物質作照射之主脈衝雷射光， 前述預脈衝雷射光之通量(fluence)，係為10mJ/cm2以上、600mJ/cm2以下，前述雷射控制部，係以會在從前述預脈衝雷射光被照射至前述靶材物質處的時間點起而經過了0.5~2.5μS之範圍內的時序處，而使前述主脈衝雷射光對於被照射有前述預脈衝雷射光之前述靶材物質作照射的方式，來對於前述主脈衝雷射光之前述輸出時序作控制。 The extreme ultraviolet light generating device according to claim 12, wherein the at least one of the laser light includes pre-pulsed laser light that is irradiated to the target material supplied to the chamber, And the main pulsed laser light irradiated to the target material irradiated with the pre-pulse laser light, the fluence of the pre-pulse laser light is 10 mJ/cm 2 or more and 600 mJ/cm 2 or less, and the thunder is The radiation control unit causes the main pulse laser light to be irradiated at a timing in which the pre-pulse laser light is irradiated to the target material at a time point of 0.5 to 2.5 μS. The aforementioned target material of the pre-pulse laser light is irradiated to control the aforementioned output timing of the main pulsed laser light. 一種極端紫外光產生裝置，其特徵為，具備有：至少1個的雷射裝置，係包含有以多橫向模態(multi-transverse mode)來振盪之主震盪器；和腔室，係被設置有用以將從前述至少1個的雷射裝置所輸出之至少1個的雷射光導入至內部的至少1個的射入口；和靶材供給部，係被設置在前述腔室內，並用以對於前述腔室內之特定的區域而供給靶材物質；和雷射集光光學系，係用以將前述至少1個的雷射光集光於前述特定之區域處；和雷射控制部，係用以對於前述雷射裝置處之前述至少1個的雷射光之輸出時序作控制。 An extreme ultraviolet light generating device, characterized in that: at least one laser device includes a main oscillator oscillating in a multi-transverse mode; and a chamber is provided At least one of the entrances for introducing at least one of the laser light outputted from the at least one of the laser devices to the inside; and a target supply unit provided in the chamber for use in the foregoing a target material is supplied to a specific region in the chamber; and a laser collecting optical system for collecting at least one of the aforementioned laser light at the specific region; and a laser control portion for The output timing of the at least one of the aforementioned laser lights at the laser device is controlled.
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