TW201248888A - Full color picture thin-film solar cell and manufacturing method thereof - Google Patents

Full color picture thin-film solar cell and manufacturing method thereof Download PDF

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TW201248888A
TW201248888A TW100118452A TW100118452A TW201248888A TW 201248888 A TW201248888 A TW 201248888A TW 100118452 A TW100118452 A TW 100118452A TW 100118452 A TW100118452 A TW 100118452A TW 201248888 A TW201248888 A TW 201248888A
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substrate
solar cell
photoelectric conversion
full
thin film
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TW100118452A
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TWI445191B (en
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Shui-Yang Lian
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Shui-Yang Lian
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Priority to JP2012007961A priority patent/JP5372184B2/en
Priority to DE102012101073A priority patent/DE102012101073A1/en
Priority to KR20120015921A priority patent/KR101485490B1/en
Publication of TW201248888A publication Critical patent/TW201248888A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)

Abstract

A full-color picture thin-film solar cell and a manufacturing method thereof are disclosed. The solar cell includes a first substrate, a photoelectric conversion film formed on the surface of the first substrate, a second substrate, and a packaging film and a color pattern layer disposed between the second substrate and the photoelectric conversion film. A laser is used with a patterned mask to perform corrosion to the photoelectric conversion film and form a hollow region on the surface of the photoelectric conversion film. The color pattern layer is colored by a color pigment, and the color pattern layer is corresponded with the hollow area to carry out display of color patterns, so as to solve the problems of low patterned resolution and inability to carry out full-color display of conventional thin-film solar cells, thereby increasing the added value of the thin-film solar cells.

Description

201248888 【發明所屬之技術領域】 六、發明說明： [0001] 本發明係有關一種薄膜太陽能電池，尤指—種全彩 圖像薄膜太陽能電池及其製作方法。 [0002] 【先前技術】 為了解決近年來日益短缺的能源問題，並且減少能 源製造對地球產生的污染問題，綠色能源被積極的開發 使用中，而太陽能電池由於其設置地點較無限制，且能 〇 ϋ 量取付來源各易，因而被積極的發展中。其中薄膜太陽 能電池因為其低成本以及具大量製造的特性，而於市場 中快速成長，薄膜太陽能電池由於可以使用在價格低廉 的玻璃、塑膠、陶瓷、石墨，金屬片等不同材料當基板 來製造’形成可產生電壓的薄膜厚度僅需數微米，而且 由於薄膜是可使用軟性基材，應用彈性大。習知的薄膜 太陽能電池，使用玻璃作為基板，並常見使用於雨棚、 遮光罩、屋頂以及大樓窗戶等，藉此產生發電的效果， 進而節省大量的電費，並有效達到節能省碳的效果。 [0003] 而為了增加薄膜太陽能電池應用於窗戶之附加價值 以及室内採光性，其係利用雷射對該太陽能電池進行熔 蝕而形成一具圖案化的顯示區域’進而利用該顯示區域 而使整體窗户更具有美感以及藝術價值，除此之外，更 利用顯示區域具有比其他區域更高的光穿透性，而提高 室内的採光度。 [0004] 但’一般雷射係以電腦控制光束開關（〇n/〇ff)的方 式而對薄膜太陽能電池進行熔蝕以形成該顯示區域，不 100118452 表單編號A0101 第3頁/共21頁 1002031078-0 201248888 但解析度不佳，且多次進行雷射光束之開關容易造成雷 射的損壞，進而影響雷射的使用壽命。另外，開關方式 的雷射僅能做到黑白圖案的顯示，並無法達到灰階圖案 顯示的功能。更遑論在薄膜太陽能電池上以彩色顯示圖 案，以提高其附屬價值以及其使用意願。綜上所述，提 高圖案顯示的解析度以及如何進行彩色顯現，便為薄膜 太陽能電池之改進目標之一。 【發明内容】 [0005] [0006] [0007] 本發明之主要目的，在於解決習知技術之薄膜太陽 能電池無法以彩色顯示圖案的問題。 本發明之另一目的，在於解決習知技術之薄膜太陽 能電池之顯示圖案解析度低的問題，並且解決利用開關 雷射進行熔蝕而降低雷射壽命的問題。 為達上述目的，本發明提供一種全彩圖像薄膜太陽 能電池，其包含有一第一基板、一形成於該第一基板表 面的光電轉換膜、一第二基板以及設置於該第二基板與 該光電轉換膜之間的一封裝膠膜與一彩色圖案層。一雷 射配合一圖案化之光罩對該光電轉換膜進行熔蝕而於該 光電轉換膜之表面形成一鏤空區。而該彩色圖案層利用 一彩色顏料進行上色且對應該鏤空區而設置於該第一基 板與該第二基板之間，該第二基板透過該封裝膠膜而與 該第一基板結合，並且經過光線照射後，該封裝膠膜上 之彩色圖案層係透過該鏤空區而顯現。 除此之外，本發明更提供一種全彩圖像薄膜太陽能 電池的製作方法，其包含有下列步驟： 100118452 表單編號A0101 第4頁/共21頁 1002031078-0 [0008] 201248888 [0009] SI :在一第一基板表面形成一光電轉換膜。 [0010] S2 :在該光電轉換膜上設置一具有圖案化之光罩。 [0011] S3 :以一光束透過該光罩熔蝕該光電轉換膜並於該 光電轉換膜上形成一鏤空區。 [0012] S4 :製備一第二基板以及一設置於該第一基板與該 第二基板之間的封裝膠膜； [0013] S5 :利用一彩色顏料於該第一基板與該第二基板之201248888 [Technical Field of the Invention] VI. Description of the Invention: [0001] The present invention relates to a thin film solar cell, and more particularly to a full color image thin film solar cell and a method of fabricating the same. [0002] [Prior Art] In order to solve the problem of increasing shortage of energy in recent years and reduce the pollution caused by energy manufacturing to the earth, green energy is actively developed and used, and solar cells are more limited in their installation locations and can 〇ϋ The source of payment is easy to develop and is therefore actively developing. Among them, thin-film solar cells are rapidly growing in the market because of their low cost and large-scale manufacturing characteristics. Thin-film solar cells can be fabricated on substrates by using inexpensive materials such as glass, plastic, ceramics, graphite, and metal sheets. The thickness of the film forming the voltage generation is only a few micrometers, and since the film is a soft substrate, the application flexibility is large. Conventional thin film solar cells use glass as a substrate and are commonly used in canopies, hoods, roofs, and building windows to generate power generation, thereby saving a large amount of electricity and effectively achieving energy saving and carbon saving effects. [0003] In order to increase the added value of the thin-film solar cell applied to the window and the indoor lighting property, the solar cell is ablated by laser to form a patterned display area, and the display area is used to make the whole The window is more aesthetic and artistic, in addition to the use of the display area has higher light penetration than other areas, and improve the indoor lighting. [0004] However, the general laser system etches the thin film solar cell by means of a computer controlled beam switch (〇n/〇ff) to form the display area, not 100118452 Form No. A0101 Page 3 of 21 page 1002031078 -0 201248888 However, the resolution is not good, and the switch of the laser beam is often caused by laser damage, which affects the service life of the laser. In addition, the laser of the switch mode can only display the black and white pattern, and the function of the gray scale pattern display cannot be achieved. Not to mention the color scheme on thin-film solar cells to increase their subsidiary value and their willingness to use them. In summary, improving the resolution of the pattern display and how to perform color rendering is one of the improvement goals of the thin film solar cell. SUMMARY OF THE INVENTION [0007] The main object of the present invention is to solve the problem that a thin film solar cell of the prior art cannot display a pattern in color. Another object of the present invention is to solve the problem of low resolution of a display pattern of a thin film solar cell of the prior art, and to solve the problem of reducing the lifetime of a laser by etching with a switching laser. In order to achieve the above objective, the present invention provides a full color image thin film solar cell including a first substrate, a photoelectric conversion film formed on the surface of the first substrate, a second substrate, and the second substrate and the An encapsulating film and a color pattern layer between the photoelectric conversion films. A photoelectric conversion film is etched by a laser beam with a patterned mask to form a hollowed-out region on the surface of the photoelectric conversion film. The color pattern layer is colored by a color pigment and disposed between the first substrate and the second substrate corresponding to the hollow region, and the second substrate is bonded to the first substrate through the package film, and After being irradiated with light, the color pattern layer on the encapsulation film is formed through the hollow region. In addition, the present invention further provides a method for fabricating a full color image thin film solar cell, which comprises the following steps: 100118452 Form No. A0101 Page 4 / Total 21 Page 1002031078-0 [0008] 201248888 [0009] SI: A photoelectric conversion film is formed on a surface of the first substrate. [0010] S2: providing a patterned photomask on the photoelectric conversion film. [0011] S3: the photoelectric conversion film is etched through a light beam by a light beam, and a hollow region is formed on the photoelectric conversion film. [0012] S4: preparing a second substrate and an encapsulation film disposed between the first substrate and the second substrate; [0013] S5: using a color pigment on the first substrate and the second substrate

間對應該鏤空區之位置進行上色，並形成一彩色圖案層 ;以及 [0014] S6 :透過該封裝膠膜結合該第一基板以及該第二基 板，該第一基板以具有該光電轉換膜之一面透過該封裝 膠膜與該第二基板結合固定，形成一太陽能電池。 [0015] 由上述說明可知，本發明具有下列特點： [0016] 一、藉由光罩配合光束熔蝕光電轉換膜避免雷射因 長期多次開關造成雷射壽命快速損壞的問題。 [0017] 二、利用光罩配合光束熔蝕而可達到灰階圖案顯示 的目的，並提高解析度。 [0018] 三、配合彩色圖案層之形成，配合鏤空區而可使薄 膜太陽能電池進行彩色顯像，增加薄膜太陽能電池應用 於窗戶的附加價值以及藝術美感。 【實施方式】 [0019] 有關本發明之詳細說明及技術内容，現就配合圖式 說明如下： 100118452 表單編號 A0101 第 5 頁/共 21 頁 1002031078-0 201248888 [0020] 請參閱「圖1」及「圖2」所示，其係分別為本發明 一較佳實施例之步驟流程及製程結構示意圖，本發明提 供一種全彩圖像薄膜太陽能電池的製作方法，其包含有 下列步驟： [0021] S1 :形成一光電轉換膜20，在一第一基板10表面形 成該光電轉換膜20，更進一步的說明，請特別參閱「圖2 」所示，該光電轉換膜20係由下列步驟完成： [0022] S1A :表面粗糙化處理，於該第一基板10表面進行 粗糙化處理，而形成一粗糙表面，藉此減少光線反射造 成的損失，而可增加該第一基板10的取光率。 [0023] S1B:形成一透明導電層21，於該粗糙表面形成該 透明導電層21，且其材質為氧化銦錫或氧化鋅鎵等。 [0024] S1C :形成一半導體層22，於該透明導電層21遠離 該第一基板10之一侧形成該半導體層22，該半導體層22 係用以吸收光源並轉化為電能，該半導體層22可為PIN半 導體，而可進行光源之吸收並轉換為電能。 [0025] S1D :形成一金屬層23，於該半導體層22遠離該透明 導電層21之一側形成該金屬層23，該金屬層23材質為銀 或鋁等，該金屬層23與該透明導電層21係用以接收並傳 導該半導體層22轉化後之電能。 [0026] 接著請配合參閱「圖3」所示，其為本發明一較佳實 施例之雷射熔蝕示意圖，完成步驟S1後，步驟S2 :設置 光罩30，在該光電轉換膜20上設置具有圖案化之光罩30 〇 100118452 表單編號A0101 第6頁/共21頁 1002031078-0 201248888 [0027] 請配合參閱「圖4」所示，步驟S3 :形成一鏤空區 24，以一雷射光束40或其他具有破壞性之光束透過該光 罩30熔蝕該光電轉換膜20並於該光電轉換膜20上形成該 鏤空區24，需說明的是，由於該光罩30之阻擋，雷射光 束40僅需要逐一掃過該光罩30，透過該光罩30上之灰階 圖樣設計，便可以控制穿過該光罩30後的雷射光束40強 度，藉此達到灰階圖案化的顯示。另外，配合圖案顯示 的形狀不同，被熔蝕的面積大小也不相同，而經由實驗 發現，經由雷射光束40熔蝕該光電轉換膜20的面積約10% 〇 左右，即可達到明顯的透光及光照效果，相較於尚未進 行熔蝕前，本發明可維持原轉換效率的90%以上。但相 較於尚未熔蝕前，卻可使室内整體光照度具有明顯的提 升。 [0028] S4 :製備一第二基板50以及一封裝膠膜60，該封裝 膠膜60設置於該第一基板10與該第二基板50之間，且其 材質為彈性膠或熱塑膠，彈性膠係如乙烯-乙酸乙烯酯共 ^ 聚物、聚胺基曱酸酯膠黏劑（polyurethane cast resins)、聚丙稀酸酯膠黏劑（polyacrylate cast resins)、石夕膠（silicones)等；而熱塑膠則如熱塑 性聚胺基曱酸酯（Thermoplastic polyurethane, TPU)、聚氯乙烤（Lonoplast)、酸改性聚烯烴（ modified polyolefines)等。 [0029] S5 :上色，利用一彩色顏料於該第一基板10與該第 二基板50之間對應該鏤空區24之位置進行上色，並形成 一彩色圖案層70，而於本實施例中，該彩色顏料於對應 100118452 表單編號A0101 第7頁/共21頁 1002031078-0 201248888 該鏤空區24之位置對該封裝膠膜60進行上色，形成一彩 色圖案層70。除此之外，請配合參閱「圖5」所示，進行 上色的位置不限制必須於封裝膠膜60之表面，亦可將該 彩色顏料直接對具有該鏤空區24的該光電轉換膜20之表 面進行上色。另外，也可如「圖6」所示，將該彩色顏料 對該第二基板50進行上色。該彩色顏料係以印刷、喷墨 、雷射或人工上色的方式對該光電轉換膜20或該封裝膠 膜60進行上色以形成該彩色圖案層70。 [0030] [0031] S6 :結合，透過該封裝膠膜60結合該第一基板10以 及該第二基板50，該第一基板10以具有該光電轉換膜20 之一面透過該封裝膠膜60與該第二基板50結合固定，形 成一太陽能電池。 而本發明更揭露一種全彩圖像薄膜太陽能電池，其 包含有一第一基板10、一形成於該第一基板10表面的光 電轉換膜20、一第二基板50以及設置於該第二基板50與 該光電轉換膜2 0之間的一封裝膠膜60與一彩色圖案層70 。該光電轉換膜20包含有一與該第一基板10連接的透明 導電層21、一金屬層23以及一形成於該透明導電層21及 該金屬層23之間的半導體層22。而該封裝膠膜60係為彈 性膠或熱塑膠。彈性膠係如乙烯-乙酸乙烯酯共聚物、聚 胺基甲酸醋耀黏劑（polyurethane cast resins)、 聚丙烯酸醋膠黏劑 _(polyacrylate cast resins)、 石夕膠（silicones)等；而熱塑膠則如熱塑性聚胺基曱 酸δ旨（Thermoplastic polyurethane, TPU)、聚氣 乙稀（Lonoplast)、酸改性聚浠烴（modified poly- 100118452 表單編號A0101 第8頁/共21頁 1002031078-0 201248888 [0032] Ο [0033] Ο [0034] [0035] [0036] ines)等。 雷射光束40配合一圖案化之光罩3〇對該光電轉換 膜2〇進行熔蝕而於該光電轉換膜20之表面形成一鏤空區 24。需特別說明的是，該彩色圖案層7〇則是利用一彩色 顏料進行上色且對應該鏤空區24而設置於該第一 與該第二基板5。之間，而如「圖4」所示，該第：^ 7〇係以印刷、喷墨、雷射或人卫上色的方式形成於該封 裝膠膜60之表面。除此之外，亦可如「圖5」之方式，利 用該彩色顏料對該光電轉換膜2〇進行上色，而形成該彩 色圖案層70。另如「圖6」之第三種實施方式，其係對該 第二基板50進行上色，而形成該彩色圖案層7()。該第二 基板50透過該封裝膠膜6〇而與該第一基板1〇結合，並且 經過光線80照射後，該封裝膠脚上之彩色圖案層7〇係 透過该鐘空區24而顯現。 , ' 綜上所述，相較於習知技術，本發明具有下列特點 一、 藉由光罩30配合雷射光束懈料電轉換劇 避免雷射因長期多次開關造成雷射壽命快速損壞的問題 〇 -利用光罩30配合光束炫姓而可達到灰階圖案顯 示的目的，並提高解析度。 二、 藉由彩色圖案層7〇並配合鏤空區24而可使薄膜 太陽能電池進行彩色顯像，增加薄膜太陽能電池應用於 窗戶的附加價值以及藝術美感。 100118452 表單編號A0101 1002031078-0 201248888 [0037] 四、利用簡易的印刷或喷墨方式而可達到彩色圖案 顯示的目的，其製程簡易，方便製造，且具有成本低之 優勢，因而可適用於大量製造。 [0038] [0039] [0040] [0041] [0042] [0043] [0044] [0045] [0046] 因此本發明極具進步性及符合申請發明專利之要件 ，爰依法提出申請，祈鈞局早曰賜准專利，實感德便。 以上已將本發明做一詳細說明，惟以上所述者，僅 爲本發明之一較佳實施例而已，當不能限定本發明實施 之範圍。即凡依本發明申請範圍所作之均等變化與修飾 等，皆應仍屬本發明之專利涵蓋範圍内。 【圖式簡單說明】 圖1，係本發明一較佳實施例之步驟流程示意圖。 圖2，係本發明一較佳實施例之製程結構示意圖。 圖3，係本發明一較佳實施例之雷射熔姓示意圖。 圖4，係本發明第一實施例之結構分解示意圖。 圖5，係本發明第二實施例之結構分解示意圖。 圖6，係本發明第三實施例之結構分解示意圖。 【主要元件符號說明】 10 :第一基板 20 :光電轉換膜 21 :透明導電層 22 :半導體層 23 :金屬層 24 :鏤空區 / 100118452 表單編號A0101 第10頁/共21頁 201248888Coloring the position of the hollowed out area and forming a color pattern layer; and [0014] S6: bonding the first substrate and the second substrate through the potting film, the first substrate having the photoelectric conversion film One surface is bonded and fixed to the second substrate through the encapsulant film to form a solar cell. [0015] As can be seen from the above description, the present invention has the following features: [0016] 1. The photoconductor is fused by the photomask to prevent the laser from rapidly damaging due to long-time switching. [0017] Second, the use of the reticle to match the beam erosion can achieve the purpose of gray scale pattern display, and improve the resolution. [0018] Third, with the formation of the color pattern layer, the thin film solar cell can be color-developed in combination with the hollowed out area, and the added value and artistic beauty of the thin film solar cell applied to the window are increased. [Embodiment] [0019] The detailed description and technical contents of the present invention will now be described as follows: 100118452 Form No. A0101 Page 5 of 21 1002031078-0 201248888 [0020] Please refer to "Figure 1" and FIG. 2 is a schematic diagram showing the steps and a process structure of a preferred embodiment of the present invention. The present invention provides a method for fabricating a full-color image thin film solar cell, which includes the following steps: [0021] S1: A photoelectric conversion film 20 is formed, and the photoelectric conversion film 20 is formed on the surface of the first substrate 10. For further explanation, please refer to "FIG. 2", the photoelectric conversion film 20 is completed by the following steps: S1A: Surface roughening treatment, roughening the surface of the first substrate 10 to form a rough surface, thereby reducing the loss caused by light reflection, and increasing the light extraction rate of the first substrate 10. [0023] S1B: forming a transparent conductive layer 21, and forming the transparent conductive layer 21 on the rough surface, and the material thereof is indium tin oxide or zinc gallium oxide. [0024] S1C: forming a semiconductor layer 22, the semiconductor layer 22 is formed on a side of the transparent conductive layer 21 away from the first substrate 10. The semiconductor layer 22 is used to absorb a light source and convert it into electrical energy. It can be a PIN semiconductor, and the light source can be absorbed and converted into electrical energy. [0025] S1D: forming a metal layer 23, the metal layer 23 is formed on a side of the semiconductor layer 22 away from the transparent conductive layer 21. The metal layer 23 is made of silver or aluminum, and the metal layer 23 and the transparent conductive layer The layer 21 is for receiving and conducting the converted electrical energy of the semiconductor layer 22. [0026] Next, please refer to FIG. 3, which is a schematic diagram of laser ablation according to a preferred embodiment of the present invention. After step S1 is completed, step S2: a photomask 30 is disposed on the photoelectric conversion film 20. Set the patterned mask 30 〇100118452 Form No. A0101 Page 6 / Total 21 Page 1002031078-0 201248888 [0027] Please refer to "Figure 4", step S3: form a hollowed out area 24, with a laser The light beam 40 or other destructive light beam is etched through the reticle 30 to etch the photoelectric conversion film 20 and form the hollowed-out region 24 on the photoelectric conversion film 20. It should be noted that due to the blocking of the reticle 30, the laser The light beam 40 only needs to be swept through the reticle 30 one by one. Through the gray scale design on the reticle 30, the intensity of the laser beam 40 passing through the reticle 30 can be controlled, thereby achieving gray scale patterned display. . In addition, the shape of the pattern displayed by the matching pattern is different, and the size of the area to be etched is also different. It has been experimentally found that the area of the photoelectric conversion film 20 is about 10% 熔 by the laser beam 40, and the obvious penetration is achieved. The light and illumination effects maintain the original conversion efficiency by more than 90% compared to before the erosion has been performed. However, compared with before the erosion, the overall illuminance of the room can be significantly improved. [0028] S4: preparing a second substrate 50 and an encapsulation film 60. The encapsulation film 60 is disposed between the first substrate 10 and the second substrate 50, and is made of elastic rubber or thermoplastic. Glues such as ethylene-vinyl acetate copolymers, polyurethane cast resins, polyacrylate cast resins, silicones, etc.; Thermoplastics such as thermoplastic polyurethane (TPU), Lonoplast, modified polyolefines, and the like. [0029] S5: coloring, using a color pigment to color the position corresponding to the hollow region 24 between the first substrate 10 and the second substrate 50, and forming a color pattern layer 70, and in this embodiment The color pigment is colored to form a color pattern layer 70 at a position corresponding to the hollowed out area 24 corresponding to 100118452 Form No. A0101, page 7 / page 21, 1002031078-0 201248888. In addition, as shown in FIG. 5, the position where the coloring is performed is not limited to the surface of the encapsulating film 60, and the color pigment may be directly applied to the photoelectric conversion film 20 having the hollow region 24. The surface is colored. Alternatively, the color pigment may be used to color the second substrate 50 as shown in Fig. 6 . The color pigment is colored by printing, ink jetting, laser or artificially coloring the photoelectric conversion film 20 or the encapsulation film 60 to form the color pattern layer 70. [0031] S6: bonding, bonding the first substrate 10 and the second substrate 50 through the encapsulation film 60, the first substrate 10 having the surface of the photoelectric conversion film 20 through the encapsulation film 60 and The second substrate 50 is fixedly coupled to form a solar cell. The present invention further discloses a full-color image thin film solar cell including a first substrate 10, a photoelectric conversion film 20 formed on the surface of the first substrate 10, a second substrate 50, and a second substrate 50. An encapsulation film 60 and a color pattern layer 70 are interposed between the photoelectric conversion film 20 and the photo-patterned film 70. The photoelectric conversion film 20 includes a transparent conductive layer 21 connected to the first substrate 10, a metal layer 23, and a semiconductor layer 22 formed between the transparent conductive layer 21 and the metal layer 23. The encapsulating film 60 is made of elastic glue or hot plastic. Elastomeric adhesives such as ethylene-vinyl acetate copolymer, polyurethane cast resins, polyacrylate cast resins, silicones, etc. For example, Thermoplastic polyurethane (TPU), Lonoplast, acid-modified poly-hydrocarbon (modified poly-100118452 Form No. A0101 Page 8 of 21 page 1002031078-0 201248888 [0032] Ο [0034] [0036] [0036] ines) and the like. The laser beam 40 is etched with a patterned mask 3 to form a hollowed-out region 24 on the surface of the photoelectric conversion film 20. It should be noted that the color pattern layer 7 is colored by a color pigment and is disposed on the first and second substrates 5 corresponding to the hollow regions 24. Between the two, as shown in Fig. 4, the first: 〇 7 形成 is formed on the surface of the package film 60 by printing, ink jet, laser or human color. Alternatively, the color conversion layer 2 may be colored by using the color pigment as shown in Fig. 5 to form the color pattern layer 70. Further, in the third embodiment of Fig. 6, the second substrate 50 is colored to form the color pattern layer 7(). The second substrate 50 is bonded to the first substrate 1 through the encapsulation film 6A, and after being irradiated by the light 80, the color pattern layer 7 on the package rubber is exposed through the clock space 24. In summary, the present invention has the following features: Compared with the prior art, the present invention has the following features: 1. The laser mask 30 is used in conjunction with the laser beam to avoid the rapid damage of the laser due to long-term multiple switching. Problem 〇 - The use of the reticle 30 in conjunction with the beam of light to achieve the purpose of gray scale pattern display, and improve the resolution. Second, the color solar cell can be color-developed by the color pattern layer 7 and the hollowed-out region 24, which increases the added value and artistic beauty of the thin film solar cell applied to the window. 100118452 Form No. A0101 1002031078-0 201248888 [0037] Fourth, the use of simple printing or inkjet method can achieve the purpose of color pattern display, the process is simple, easy to manufacture, and has the advantage of low cost, so it can be applied to mass production . [0046] [0046] [0046] Therefore, the present invention is highly progressive and meets the requirements of the invention patent application, and the application is made according to law. As early as the grant of patents, the real sense of virtue. The invention has been described in detail above, but the foregoing is only a preferred embodiment of the invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing the steps of a preferred embodiment of the present invention. 2 is a schematic view showing a process structure of a preferred embodiment of the present invention. FIG. 3 is a schematic diagram of a laser melting surname according to a preferred embodiment of the present invention. Figure 4 is a schematic exploded view of the first embodiment of the present invention. Figure 5 is a schematic exploded view of the second embodiment of the present invention. Figure 6 is a schematic exploded view of a third embodiment of the present invention. [Description of main component symbols] 10: First substrate 20: Photoelectric conversion film 21: Transparent conductive layer 22: Semiconductor layer 23: Metal layer 24: Hollow area / 100118452 Form No. A0101 Page 10 of 21 201248888

30 :光罩 40 :雷射光束 50 :第二基板 60 :封裝膠膜 70 :彩色圖案層 80 :光線 步驟：S1〜S6 步驟：S1A〜S1D Ο 100118452 表單編號A0101 第11頁/共21頁 1002031078-030: reticle 40: laser beam 50: second substrate 60: encapsulation film 70: color pattern layer 80: light step: S1~S6 Step: S1A~S1D Ο 100118452 Form No. A0101 Page 11 of 21 1002031078 -0

Claims (1)

201248888 七、申請專利範圍： 1 . 一種全彩圖像薄膜太陽能電池，其包含有： 一第一基板； 一形成於該第一基板表面的光電轉換膜，一雷射配合一圖 案化之光罩對該光電轉換膜進行熔蝕而於該光電轉換膜之 表面形成一鏤空區； 一第二基板，設置於該光電轉換膜遠離該第一基板之一側 9 一設置於該第二基板與該光電轉換膜之間的封裝膠膜，藉 此結合具有該光電轉換膜之第一基板以及該第二基板； 一彩色圖案層，設置於該第一基板與該第二基板之間，並 對應該鏤空區之位置與形狀。 2 .如申請專利範圍第1項所述之全彩圖像薄膜太陽能電池， 其中該彩色圖案層係以印刷、喷墨、雷射或人工上色的方 式形成於該封裝膠膜之表面。 3 .如申請專利範圍第1項所述之全彩圖像薄膜太陽能電池， 其中該彩色圖案層係以印刷、噴墨、雷射或人工上色的方 式形成於該光電轉換膜之表面。 4 .如申請專利範圍第1項所述之全彩圖像薄膜太陽能電池， 其中該彩色圖案層係以印刷、噴墨、雷射或人工上色的方 式形成於該第二基板鄰近該封裝膠膜之表面。 5 .如申請專利範圍第1項所述之全彩圖像薄膜太陽能電池， 其中該封裝膠膜係為彈性膠或熱塑膠。 6 .如申請專利範圍第1項所述之全彩圖像薄膜太陽能電池的 製作方法，其中該封裝膠膜係之材質選自於由乙烯-乙酸 100118452 表單編號A0101 第12頁/共21頁 201248888 乙烯酯共聚物、聚胺基甲酸酯膠黏劑、聚丙烯酸酯膠黏劑 、石夕膠及其組合所組成之群組。 7 .如申請專利範圍第1項所述之全彩圖像薄膜太陽能電池的 製作方法，其中該封裝膠膜之材質係選自於熱塑性聚胺基 甲酸酯、聚氯乙烯、酸改性聚烯烴及其組合所組成之群組 〇 8 .如申請專利範圍第1項所述之全彩圖像薄膜太陽能電池， 其中該光電轉換膜包含有一與該第一基板連接的透明導電 層、一金屬層以及一形成於該透明導電層及該金屬層之間 〇 的半導體層。 9 .如申請專利範圍第8項所述之全彩圖像薄膜太陽能電池， 其中該透明導電層之材質為氧化銦錫或氧化鋅鎵，且該金 屬層材質為銀或鋁。 10 . —種全彩圖像薄膜太陽能電池的製作方法，包含有下列步 驟： 51 :在一第一基板表面形成一光電轉換膜； 52 :在該光電轉換膜上設置一具有圖案化之光罩； 0 S3 :以一光束透過該光罩熔蝕該光電轉換膜並於該光電轉 換膜上形成一鏤空區； 54 :製備一第二基板以及一設置於該第一基板與該第二基 板之間的封裝膠膜； 55 :利用一彩色顏料於該第一基板與該第二基板之間對應 該鏤空區之位置進行上色以形成一彩色圖案層；以及 56 :透過該封裝膠膜結合該第一基板以及該第二基板，該 第一基板以具有該光電轉換膜之一面透過該封裝膠膜與該 第二基板結合固定，形成一太陽能電池。 100118452 表單編號A0101 第13頁/共21頁 1002031078-0 201248888 U 巾請專圍第1G項所述之全彩®像薄膜太陽能電池的 ’作方法，其中於步驟§5中，該彩色顏料係對該光電轉換 骐進行上色以形成該彩色圖案層。 12 .如申請專利範圍第1〇項所述之全彩圖像薄膜太陽能電池的 製作方法，其中於步驟55中，該彩色顏料係對該封裝膠膜 進行上色以形成該彩色圖案層。 13 .如申請專利範圍第10項所述之全彩圖像薄膜太陽能電池的 製作方法，其中於步驟55中，該彩色顏料係對該第二基板 進行上色以形成該彩色圖案層。 14 .如申請專利範圍第1〇項所述之全彩圖像薄膜太陽能電池的 製作方法，其中於步驟S4中所製備的該封裝膠膜係為彈性 膠或熱塑膠。 15 .如申請專利範圍第10項所述之全彩圖像薄膜太陽能電池的 製作方法’其中該封裝膠膜之材質係選自於由乙烯-乙酸 乙烯酯共聚物、聚胺基甲酸酯膠黏劑、聚丙烯酸酯膠黏劑 、矽膠及其組合所組成之群組。 1 C •如申請專利範圍第10項所述之全彩圖像薄膜太陽能電池的 製作方法’其中該封裝膠膜之材質係選自於熱塑性聚胺基 曱酸酯、聚氣乙婦、酸改性聚稀烴及其組合所組成之群組 17 18 100118452 如申請專利範圍第10項所述之全彩圖像薄膜太陽能電池的 製作方法，其中於步驟S5中’該彩色顏料係以印刷、喷墨 '雷射或人工上色的方式進行上色以形成該彩色圖案層。 如申請專利範圍第10項所述之全彩圖像薄膜太陽能電池的 製作方法’其中於步驟S1中，更包含有下列步驟： S1A :於該第一基板表面進行粗糙化處理，而形成一粗糖 表單編號A0101 第14頁/共21頁 1(1η9 201248888 表面； S1B :於該粗链表面形成一透明導電層； S1C :於該透明導電層遠離該第一基板之一側形成一半導 體層，該半導體層係用以吸收光源並轉化為電能；及 S1D :於該半導體層遠離該透明導電層之一側形成一金屬 層，該金屬層與該透明導電層係用以接收並傳導該半導體 層轉化後之電能。 19 .如申請專利範圍第18項所述之全彩圖像薄膜太陽能電池的 製作方法，其中透明導電層之材質為氧化銦錫或氧化鋅鎵 〇 ，且該金屬層材質為銀或鋁。 100118452 表單編號A0101 第15頁/共21頁 1002031078-0201248888 VII. Patent application scope: 1. A full-color image thin film solar cell, comprising: a first substrate; a photoelectric conversion film formed on the surface of the first substrate, a laser matched with a patterned photomask The photoelectric conversion film is etched to form a hollow region on the surface of the photoelectric conversion film; a second substrate is disposed on the side of the photoelectric conversion film away from the first substrate 9 and disposed on the second substrate An encapsulating film between the photoelectric conversion films, thereby combining the first substrate having the photoelectric conversion film and the second substrate; a color pattern layer disposed between the first substrate and the second substrate, and correspondingly The location and shape of the hollow area. 2. The full color image thin film solar cell of claim 1, wherein the color pattern layer is formed on the surface of the encapsulant film by printing, inkjet, laser or artificial coloring. 3. The full color image thin film solar cell of claim 1, wherein the color pattern layer is formed on the surface of the photoelectric conversion film by printing, inkjet, laser or artificial coloring. 4. The full color image thin film solar cell according to claim 1, wherein the color pattern layer is formed on the second substrate adjacent to the encapsulant by printing, inkjet, laser or artificial coloring. The surface of the film. 5. The full color image thin film solar cell according to claim 1, wherein the encapsulating film is an elastic glue or a hot plastic. 6. The method for fabricating a full-color image thin film solar cell according to claim 1, wherein the material of the encapsulating film is selected from the group consisting of ethylene-acetic acid 100118452 Form No. A0101 Page 12 of 21 201248888 A group consisting of a vinyl ester copolymer, a polyurethane adhesive, a polyacrylate adhesive, a swagelin, and combinations thereof. 7. The method of fabricating a full color image thin film solar cell according to claim 1, wherein the material of the encapsulant film is selected from the group consisting of thermoplastic polyurethane, polyvinyl chloride, and acid modified poly. A full-color image thin film solar cell according to claim 1, wherein the photoelectric conversion film comprises a transparent conductive layer and a metal connected to the first substrate. And a semiconductor layer formed between the transparent conductive layer and the metal layer. 9. The full color image thin film solar cell according to claim 8, wherein the transparent conductive layer is made of indium tin oxide or zinc gallium oxide, and the metal layer is made of silver or aluminum. 10. A method for fabricating a full-color image thin film solar cell, comprising the steps of: 51: forming a photoelectric conversion film on a surface of a first substrate; 52: providing a patterned photomask on the photoelectric conversion film 0 S3: a light beam is transmitted through the mask to etch the photoelectric conversion film and form a hollow region on the photoelectric conversion film; 54: preparing a second substrate and a first substrate and the second substrate a sealing film; 55: coloring a position corresponding to the hollow region between the first substrate and the second substrate by using a color pigment to form a color pattern layer; and 56: bonding the film through the sealing film The first substrate and the second substrate, the first substrate is bonded to the second substrate through a surface of the photoelectric conversion film to form a solar cell. 100118452 Form No. A0101 Page 13 of 21 1002031078-0 201248888 U Towels Please refer to the method of the full color® film solar cell described in Item 1G, in which the color pigment pair is in step §5. The photoelectric conversion layer is colored to form the color pattern layer. 12. The method of fabricating a full color image thin film solar cell according to claim 1, wherein in step 55, the color pigment colors the encapsulant film to form the color pattern layer. 13. The method of fabricating a full color image thin film solar cell according to claim 10, wherein in step 55, the color pigment colors the second substrate to form the color pattern layer. The method for fabricating a full-color image thin film solar cell according to the first aspect of the invention, wherein the encapsulating film prepared in the step S4 is an elastic rubber or a thermoplastic. 15. The method for fabricating a full-color image thin film solar cell according to claim 10, wherein the material of the encapsulant film is selected from the group consisting of ethylene-vinyl acetate copolymer and polyurethane glue. A group of adhesives, polyacrylate adhesives, silicones, and combinations thereof. 1 C. The method for manufacturing a full-color image thin film solar cell according to claim 10, wherein the material of the encapsulating film is selected from the group consisting of thermoplastic polyamino phthalate, gas gathering, and acid modification. A method for producing a full-color image thin film solar cell according to claim 10, wherein in step S5, the color pigment is printed or sprayed. The ink is colored by laser or artificially colored to form the color pattern layer. The method for manufacturing a full-color image thin film solar cell according to claim 10, wherein in the step S1, the method further comprises the following steps: S1A: roughening the surface of the first substrate to form a raw sugar Form No. A0101, page 14 of 21, 1 (1η9 201248888 surface; S1B: forming a transparent conductive layer on the surface of the thick chain; S1C: forming a semiconductor layer on the side of the transparent conductive layer away from the first substrate, a semiconductor layer for absorbing the light source and converting into electrical energy; and S1D: forming a metal layer on a side of the semiconductor layer away from the transparent conductive layer, the metal layer and the transparent conductive layer for receiving and conducting the semiconductor layer conversion 19. The method of manufacturing a full-color image thin film solar cell according to claim 18, wherein the transparent conductive layer is made of indium tin oxide or zinc gallium oxide, and the metal layer is made of silver. Or aluminum. 100118452 Form No. A0101 Page 15 / Total 21 Page 1002031078-0
TW100118452A 2011-05-26 2011-05-26 Full color picture thin-film solar cell and manufacturing method thereof TW201248888A (en)

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