TW201245905A

TW201245905A - Exposure method, exposure apparatus and device manufacturing method

Info

Publication number: TW201245905A
Application number: TW101112158A
Authority: TW
Inventors: Tadaaki Shinozaki; Nobutaka Nakamura
Original assignee: Nikon Corp
Priority date: 2011-04-05
Filing date: 2012-04-05
Publication date: 2012-11-16
Also published as: TWI579649B; WO2012137866A1; JP2012220559A

Abstract

An exposure method for exposing a substrate with an exposure light includes: acquiring information for deformation of a first portion in an outer edge region including an edge of the substrate; acquiring information for deformation of a second portion different from the first portion in the outer edge region based on the acquired result and a prescribed relational expression; and exposing the substrate based on the acquired information for deformation of the first portion and the second portion.

Description

201245905 六、發明說明：【發明所屬之技術領域】本發明係關於曝光方法'曝光裝置及元件製造方法。本申請案，以20U年4月5日申請之日本國特願2〇11 -083594號為基礎主張優先權，並將其内容援用於此。【先前技術】於平板顯示器等電子元件之製程中，係使用如專利文獻1所Μ之以曝光用光使基板曝光之曝光裝置。元件則係藉由在基板上積層複數層圖案（圖案化之膜）據以形成。於曝光處理中，在已形成於基板之圖案重疊下一圖案之像時，係測量基板之對準標記並根據該對準標記之測量結果，實施進行基板與下一圖案之像之位置對準的對準處理。先行技術文獻 [專利文獻1]日本特開2001 — 215718號公報【發明内容】發明欲解決之課題於曝光處理中，當基板變形時，圖案之重疊精度降低，其結果’將導致曝光不良之發生及產生不良元件。為了在基板變形之情形辟仍能抑制圖案重疊精度之降低，精確的取得與基板變形相關之資訊是非常有效的。在基板之變形包含非線性成分（非線性變形）之情形時，藉由增加對準標記 4 201245905201245905 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an exposure method 'exposure device and a device manufacturing method. In the present application, priority is claimed on the basis of Japanese Patent Application No. 2-11-083594, filed on April 5, 20U, and the contents thereof are hereby incorporated. [Prior Art] In the manufacturing process of an electronic component such as a flat panel display, an exposure apparatus which exposes a substrate by exposure light is used as disclosed in Patent Document 1. The element is formed by laminating a plurality of layers of patterned (patterned film) on the substrate. In the exposure process, when the image formed on the substrate overlaps the image of the next pattern, the alignment mark of the substrate is measured and the position alignment of the image of the substrate and the next pattern is performed according to the measurement result of the alignment mark. Alignment processing. SUMMARY OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION In the exposure processing, when the substrate is deformed, the overlap accuracy of the pattern is lowered, and as a result, "the occurrence of poor exposure" is caused. And produce defective components. In order to suppress the reduction in pattern overlap accuracy in the case of substrate deformation, it is very effective to accurately obtain information relating to substrate deformation. When the deformation of the substrate contains a nonlinear component (non-linear deformation), by adding an alignment mark 4 201245905

之測量點數，P A ^ ' ’卩能精確的取得與包含該非線性變形之基板變形相關之資。。；'、、而’當增加對準標記之測量點數時，本Z °亥’則I之時間增加，而有可能導致生產量之降低。 #、f 2月之目的在提供一種能在抑制生產量降低之同伞&的取侍與基板變形相關之資訊，而能抑制發生曝煜供一之曝光方法及曝光裝置。x，本發明之再-目的在 %在抑制生產量降低之同時、抑制不良元件之產生之7G件製造方法。用以解決課題之手段、/‘、達成上述目@ ,本發明之一態樣之曝光方法，係以 :光用光使基板曝光，纟包含··取得含該基板端部之外緣區j之第1部分之變形相關的資訊；根據該取得之結果與既疋關係式’取得與$帛丨部分不同之該外緣區域之第2 邛刀之變形相關的資訊；以及根據所取得之與該第1部分及該第2部分之變形相關的資訊，使該基板曝光。本發明另一態樣之元件製造方法，包含使用上述態樣之曝光方法使基板曝光之動作，以及使曝光後之基板顯影之動作。本發明再一態樣之曝光裝置，係以曝光用光使基板曝光，其具備：用以取得與含該基板端部之外緣區域之第丄部分之變形相關之資訊的第丨取得裝置；以及根據以該第i 取得裝置取得之結果與既定關係式，取得與該第丨部分不同之與該外緣區域之第2部分之變形相關之資訊的第2取 201245905 得裝置；根據所取得之與該第丨部分及該第2部分之變形相關之資訊，使該基板曝光。本發明再-態樣之元件製造方法，包含使用上述曝光裝置使基板曝光之動作，以及使曝光後之基板顯影之動作。發明效果根據本發明之上述態樣，能在抑制生產量降低之同時、抑制曝光不良之發生。此外，根據本發明之上述態樣，能在抑制生產量降低之同時、抑制不良元件之產生。【實施方式】以下，將一邊參照圖式一邊說明本發明之實施形態，但本發明並不限定於此。於以下之説明中，係設定一 xyz 正交座標系’一邊參照此χγζ正交座標系一邊說明各部：位置關係。並設水平面内之既定方向為χ軸方向、於水平面内與X軸方向正交之方向為γ軸方向、分別與乂軸方向及Υ軸方向正交之方向（亦即鉛直方向）為ζ軸方向。此外，設繞X軸、Υ軸及Ζ軸旋轉（傾斜）方向分別為0χ、$ υ及 θ Ζ方向。 <第1實施形態> 首先’說明第1實施形態。圖1係顯千丁頊不第1貫施形態之曝光裝置ΕΧ之一例的概略構成圖、圖2 丨尔且體圖。圖1 及㈣，曝光裝置ΕΧ’具備：可保持光罩Μ移動之光罩載台i、可保持基板Ρ移動之基板載台2、移動光罩載台！之驅動系統3、移動基板載台2之驅動系絲4 、 '以曝光用光 6 201245905 EL照明光罩Μ之照明系統IS、將經曝光用光EL照明之光罩Μ之圖案像投影至基板P之投影系統ps、控制曝光裝置 EX全體之動作之控制裝置5、連接於控制裝置5以儲存與曝光相關之各種資訊之記憶裝置5R。光罩Μ包含形成有待投影至基板p之元件圖案之標線片。基板P則包含例如玻璃板等基材、與形成在該基材上之感光膜（塗有感光劑）。本實施形態中，基板P之外形為四角形。本實施形態中，基板P包含大型玻璃板，該基板p 一邊之尺寸例如為500mm以上。本實施形態中，基板p之基材係使用一邊約3000mm之四角形玻璃板。又，本實施形態之曝光裝置EX，具備用以測量光罩載台1及基板載台2之位置資訊之干涉儀系統6、檢測光罩M 表面（下面、圖案形成面）之位置資訊之第！檢測系統7、檢測基板P表面（曝光面、感光面）之位置資訊之第2檢測系統 8、以及執行基板P上之對準標記測量之對準系統9。又’曝光裝置EX具備機體1 3。機體1 3，具備例如透過防震台BL配置在無塵室内之支承面（例如床面）FL上之基座板10、配置在基座板10上之第丨柱n、配置在第丨柱 11上之第2柱12 >本實施形態中，機體13支承投影系統 pS、光罩載台1及基板載台2之各個。本實施形態中，投影系統PS係透過平台丨4支承於第1柱丨丨。光罩載台1被支承為可相對第2柱12移動。基板載台2則被支承為可相對基座板10移動。本實施形態中，投影系統PS具有複數個投影光學系。 201245905 照明系統is具有對應複數個投影光學系之複數個照明模組。又，本實施形態之曝光裝置EX係一邊使光罩Μ與基板Ρ同步移動於既定掃描方向、一邊將光罩Μ之圖案像投影至基板Ρ。亦即’本實施形態之曝光裝置ΕΧ係所謂的多透鏡型掃描曝光裝置^ 本實施形態中，投影系統PS具有7個投影光學系pL J 〜PL7，照明系統IS具有7個照明模組ili〜IL7。當然，投影光學系及照明模組之數量不限於7個，例如投影系統 ps可具有11個投影光學系、照明系統IS可具有丨丨個照明模組。照明系統IS可對既定照明區域IR1〜IR7照射曝光用光 EL ° 照明區域IR1〜IR7包含在從各照明模組lu〜iL7射出The number of measurement points, P A ^ ' ', can accurately obtain the resources related to the deformation of the substrate containing the nonlinear deformation. . ; ', and ' When the number of measurement points of the alignment mark is increased, the time of this Z °H' is increased, which may result in a decrease in throughput. #, f The purpose of February is to provide an information relating to the deformation of the umbrella and the substrate which can suppress the decrease in the production amount, and to suppress the exposure method and the exposure apparatus for the exposure. x, the re-purpose of the present invention is a method for producing a 7G piece which suppresses the generation of defective components while suppressing a decrease in throughput. The method for solving the problem, /', achieving the above-mentioned object, an exposure method according to one aspect of the present invention is to expose the substrate by light, and to include the outer edge region of the end portion of the substrate. Information relating to the deformation of the first part; according to the result of the acquisition and the relationship of the relationship 'to obtain the information related to the deformation of the second file of the outer edge region different from the $帛丨 portion; and according to the obtained The information relating to the deformation of the first part and the second part exposes the substrate. Another aspect of the device manufacturing method of the present invention includes an operation of exposing a substrate using the exposure method of the above aspect, and an operation of developing the exposed substrate. A further exposure apparatus of the present invention exposes a substrate by exposure light, and includes: a second acquisition device for acquiring information related to deformation of a third portion including an outer edge region of the substrate end portion; And a second device 201245905 that obtains information related to the deformation of the second portion of the outer edge region different from the second portion based on the result obtained by the i-th acquisition device and the predetermined relationship; Information relating to the deformation of the third portion and the second portion exposes the substrate. A method of manufacturing a device according to a further aspect of the present invention includes an operation of exposing a substrate using the exposure apparatus described above, and an operation of developing the substrate after exposure. According to the above aspect of the present invention, it is possible to suppress the occurrence of exposure failure while suppressing a decrease in the throughput. Further, according to the above aspect of the invention, it is possible to suppress the occurrence of defective elements while suppressing a decrease in the throughput. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an xyz orthogonal coordinate system is set, and each part is described with reference to the χγζ orthogonal coordinate system. The predetermined direction in the horizontal plane is the χ axis direction, the direction orthogonal to the X-axis direction in the horizontal plane is the γ-axis direction, and the direction orthogonal to the 乂-axis direction and the Υ-axis direction (ie, the vertical direction) is the ζ axis. direction. In addition, the directions of rotation (tilting) around the X-axis, the Υ-axis, and the Ζ axis are 0χ, $ υ, and θ Ζ, respectively. <First Embodiment> First, the first embodiment will be described. Fig. 1 is a schematic configuration diagram showing an example of an exposure apparatus which is not in the first embodiment, and Fig. 2 is a schematic view of the apparatus. 1 and (4), the exposure apparatus ΕΧ' includes a photomask holder i capable of holding the mask Μ moving, a substrate stage 2 capable of holding the substrate Ρ moving, and a moving mask holder! The driving system 3, the driving wire 4 for moving the substrate stage 2, the illumination system IS for the exposure light 6 201245905 EL illumination mask, and the pattern image of the mask 经 illuminated by the exposure light EL are projected onto the substrate The projection system ps of P, the control device 5 for controlling the operation of the entire exposure device EX, and the memory device 5R connected to the control device 5 for storing various information related to exposure. The mask Μ includes a reticle that forms a pattern of elements to be projected onto the substrate p. The substrate P contains, for example, a substrate such as a glass plate, and a photosensitive film (coated with a sensitizer) formed on the substrate. In the present embodiment, the outer surface of the substrate P is formed in a quadrangular shape. In the present embodiment, the substrate P includes a large glass plate, and the size of one side of the substrate p is, for example, 500 mm or more. In the present embodiment, the base material of the substrate p is a square glass plate having a side of about 3000 mm. Further, the exposure apparatus EX of the present embodiment includes an interferometer system 6 for measuring position information of the mask stage 1 and the substrate stage 2, and a position information for detecting the surface of the mask M (lower surface, pattern forming surface). ! The detecting system 7, the second detecting system 8 for detecting the positional information of the surface (exposure surface, photosensitive surface) of the substrate P, and the alignment system 9 for performing the alignment mark measurement on the substrate P. Further, the exposure apparatus EX includes a body 13 . The body 13 includes, for example, a base plate 10 that is disposed on a support surface (for example, a bed surface) FL of the clean room through the vibration-damping stage BL, a second column n disposed on the base plate 10, and a second column 11 The second column 12 > In the present embodiment, the body 13 supports each of the projection system pS, the mask stage 1 and the substrate stage 2. In the present embodiment, the projection system PS is supported by the first column through the stage 丨4. The mask stage 1 is supported to be movable relative to the second column 12. The substrate stage 2 is supported to be movable relative to the base plate 10. In the present embodiment, the projection system PS has a plurality of projection optical systems. The 201245905 illumination system is having a plurality of illumination modules corresponding to a plurality of projection optical systems. Further, in the exposure apparatus EX of the present embodiment, the pattern image of the mask 投 is projected onto the substrate 一边 while moving the mask Μ and the substrate 于 in the predetermined scanning direction. That is, the exposure apparatus of the present embodiment is a so-called multi-lens type scanning exposure apparatus. In the present embodiment, the projection system PS has seven projection optical systems pL J to PL7, and the illumination system IS has seven illumination modules ili~ IL7. Of course, the number of projection optical systems and illumination modules is not limited to seven. For example, the projection system ps can have 11 projection optical systems, and the illumination system IS can have one illumination module. The illumination system IS can illuminate the predetermined illumination areas IR1 to IR7 with illumination light EL ° illumination areas IR1 to IR7 are included in the illumination modules lu~iL7

之曝光用光EL之照射區域中。本實施形態令，照明系統B 係以曝光用光EL照明不同之7個照明區域iri〜ir7之各個。照明线is以均句照度分布之曝光用光EL照明光罩 :中配置在照明區域IR1〜IR7之部分。本實施形態中，從照明系統is射出之曝光用光EL係例如使用從水銀燈射出之輝線（g線、h線、丨線）。光罩載台1可在保持光罩M之狀態下相對照明區域⑷ 二。移動。光罩載台丨具有可保持光罩m之光罩保持部光罩保持部15包含可直介明附出s 光罩Μ保持成可釋放二附先罩M之夾頭機構，將成了釋放。本實施形態中’光罩保持部15將光 201245905 罩Μ保持成光罩行。，驅叙面（圖案形成面）與ΧΥ平面大致平丁驅動系統3例如台合始ω 面郎上移動光罩載二達’能在第2柱12之導引由驅動系統3之作動在t貫施形態中，光罩載台1可藉離下认後動在以光罩保持部15保持光罩Μ之狀 ^ 導引面12G上移動於X軸、Υ軸及ΘΖ方向之3 万向。才又衫糸統p S可董+ g j中机In the irradiation area of the exposure light EL. In the present embodiment, the illumination system B illuminates each of the seven different illumination areas iri to ir7 by the exposure light EL. The illumination line is an exposure light EL illumination mask that is distributed in a uniform sentence illuminance: is disposed in the illumination areas IR1 to IR7. In the present embodiment, the exposure light EL emitted from the illumination system is, for example, a glow line (g line, h line, or squall line) emitted from a mercury lamp. The mask stage 1 can be opposed to the illumination area (4) in a state in which the mask M is held. mobile. The reticle stage has a reticle holding portion that can hold the reticle m. The reticle holder 15 includes a chuck mechanism that can directly release the s-mirror and is held in a releasable second hood M, and is released. In the present embodiment, the mask holding portion 15 holds the light 201245905 cover as a mask row. , the rehearsal surface (pattern forming surface) and the ΧΥ plane roughly flat drive system 3, for example, the taihe ω surface lang on the moving hood, the second dam can be guided by the second column 12 by the drive system 3 at t In the embodiment, the mask stage 1 can be moved in the direction of the X-axis, the x-axis, and the x-direction by the mask holding portion 15 while holding the mask holder 15 from the lower side. . Only in the shirt, p S can Dong + g j machine

光EL 疋才又衫區域PR 1〜PR7照射曝光用投影區域PR1〜PR7相對於從各投影光學系PL1〜PL7 射出之曝光用光E L之照射區域。本實施形態中，投影系統 ps.係將圖案之像投影至不同之7個投影區域哪〜阶之各個扠影光學系統PS將光罩M之圖案之像以既定投影倍率投影至基板P中配置在投影區域pRl〜pR7之部分。基板載台2可在保持基板p之狀態下相對投影區域pRi 移動基板載台2具有可保持基板p之基板保持部 1 6。基板保持部丨6包含可真空吸附基板p之夾頭機構，將基板.p保持成可釋放。本實施形態中，基板保持部16將基板p保持成基板p之表面（曝光面）與χγ平面大致平行◊驅動系統4例如包含線性馬達，可在基座板1〇之導引面i〇G 上移動基板載台2。本實施形態中，基板載台2藉由驅動系統4之作動，在以基板保持部16保持基板p之狀態下，於導引面10G上移動於X軸、γ軸、z軸、Θ. X、0丫及02 方向之6方向。干涉儀系統6 ’具有測量光罩載台1之位置資訊之雷射 201245905 干涉儀單元6A、與測量基板載台2之位置資訊之雷射干涉儀單元0B。雷射干涉儀單元6A可使用配置在光罩载台\ 之測量鏡（min*〇r)lR，測量光罩載台j之位置資訊。雷射干涉儀單元6B可使用配置在基板載台2之測量鏡2R，測量基板載台2之位置資訊。本實施形態中，干涉儀系統6可使用雷射干涉儀單元 6A、6B測量光罩載台丨及基板載台2之各個於χ軸、γ軸及0Χ方向之位置資訊。實施基板ρ之曝光處理時、或實施既定測量處理時，控制裝置5根據干涉儀系統6之測量結果，使驅動系統3、4作動以實施光罩載台丨（光罩Μ)及基板載台2(基板ρ)之位置控制。對準系統9測量設於基板ρ之對準標記。對準系統9係所謂之離軸方式之對準系統，具有與基板載〇 2所保持之基板ρ之表面對向配置之複數個顯微鏡 9Α〜9F。顯微鏡9Α〜9F之各個，分別具有對檢測區域al 1 〜AL6照射檢測光的投射部、與能取得配置在檢測區域AL1 〜AL6之對準標記之光學像的受光部。控制裝置5，係以藉由投影系統PS形成之光罩μ之圖案像重疊於已形成在基板ρ之圖案之方式，實施曝光處理。曝光處理時，控制裝置5係測量基板Ρ之對準標記，並根據該對準標記之測量結果，實施進行基板Ρ與光罩Μ之圖案像之位置對準的對準處理。圖3係顯示投影系統PS之投影區域PR1〜PR7與對準系統9之檢測區域AL1〜AL6與基板Ρ之一位置關係例的 201245905 示意圖，其顯示包含基板p表面之平面内的位置關係β 如圖3所示，本實施形態中，基板ρ之外形為四角形。本實施形態中，基板Ρ之外形係於χ軸方向長之長方形。當然，基板Ρ之外形亦可以是正方形、或於γ軸方向長之長方形。基板Ρ具有4個邊。基板ρ具有與又轴方向大致平行之2個邊W、S2及與γ軸方向大致平行之2個邊s3、s“ 以下之説明中，將基板ρ具有之與乂軸方向大致平行之2個邊S卜S2中之一邊適當的稱為第】邊s卜將另一邊適當的稱為第2邊S2。本實施形態中，第iiisi# + Y側之邊、第2邊S2則係-γ側之邊。又，將基板p具有之與 Y轴方向大致平行之2個邊S3、s”之一邊適當的稱為第 3邊S3、將另邊適當的稱為第4邊S4。本實施形態中，第 3;邊S3係一X側之邊、第4邊S4則係+ χ側之邊。又’以下之説明中，將包含基板p之端(邊)之基板”卜緣區域適當的稱為外緣區域GA。此外，將基板”位於外緣區域GA内側之區域適當的稱為内部區域Μ。内部區域 IM係包含基板P之中心之區域”卜緣區域ga則係内部區域UA周圍之區域。又’將外緣區域GA中、於γ “ 1 τ π Υ輛方向長（延伸）之部分备的稱為Υ部分GAy、將於X軸方Θ 為X部分GAX。向延伸之部分適當的稱本實施形態中，Y部分Gay包含：含延伸於之第3邊S3之第1Y部分GAyl、與含延伸於γ轴方向： 201245905 第4邊S4之第2Y部分GAy2。X部分GAx包含：含延伸於X軸方向之第1邊S1之第IX部分G Αχ 1、與含延伸於X 軸方向之第2邊S2之第2Χ部分GAx2。Υ部分Gay中，第 1Y部分GAyl係相對基板P中心配置在一X側，第2Y部分 GAy2則相對基板P中心配置在+ X側。X部分GAx中，第 1 X部分GAx 1係相對基板P中心配置在+ Y側，第2X部分 GAx2則相對基板P中心配置在一Y側。如圖3所示，本實施形態中，基板P之表面具有光罩Μ 之圖案像被投影之複數個曝光區域（被處理區域）ΡΑ1〜 ΡΑ6。本實施形態中，基板Ρ之表面具有6個曝光區域ΡΑ1 〜ΡΑ6。曝光區域ΡΑ1、ΡΑ2、ΡΑ3於Υ軸方向大致分離等間隔配置，曝光區域ΡΑ4、ΡΑ5、ΡΑ6於Υ軸方向大致分離等間隔配置。曝光區域ΡΑ卜ΡΑ2、ΡΑ3相對曝光區域ΡΑ4、 ΡΑ5、ΡΑ6配置在+ X側。曝光區域ΡΑ1〜ΡΑ6配置在基板 Ρ之内部區域UA。本實施形態中，投影區域PR1〜PR7之各個於ΧΥ平面内為梯形。本實施形態中，投影光學系PL1、PL3、PL5、 PL7之投影區域PR1、PR3、PR5、PR7係於Υ軸方向以大致等間隔配置，投影光學系PL2、PL4、PL6之投影區域PR2、 PR4、PR6於Υ軸方向以大致等間隔配置。投影區域PR1、 PR3、PR5、PR7相對投影區域PR2、PR4、PR6酉己置在一X 側。又，於Υ軸方向，在投影區域PR1、PR3、PR5、PR7 之間分別配置投影區域PR2、PR4、PR6。本實施形態中，顯微鏡9 Α〜9F之檢測區域AL 1〜AL6 12 201245905 .相對投影區域PR1〜PR7配置在—X側。檢測區域AL1〜 AL6於Y軸方向分離配置。複數個檢測區域Au〜al6中，於Y軸方向的外側2個檢測區域AL1(AL5)與檢測區域 AL2(AL6)之間隔，與複數個曝光區域pA1〜pA6中於γ軸方向的外側2個曝光區域pA1(PA4)之一 γ側邊緣與曝光區域PA3(PA6)之+ Y側之邊緣之間隔大致相等。對準系統9檢測設於基板p之複數個對準標記〜 m6。本實施形態中’基板p上於γ軸方向配置有6個對準標記…〜爪卜此等對準標記ml〜m6之群組於乂軸方向配置在4處。！個群組中，對準標記ml〜m6之各個係於X軸方向分離配置。4個群組之各個，於γ軸方向分離配置。 .以下之説明中，將對準標記m 1〜m6之4個群組中位於最一X側之群組適當的稱為第！群組G1，將第i群組G1 之-X側之群組適當的稱為第2群組G2，將第2群組G2 之一X側之群組適當的稱為第3群組G3,將位於最+x側之群組適當的稱為第4群組G4。第i〜第4群組⑴〜以之對準標記ml〜m6中，第1群組G1之對準標記mi〜m4 最接近第3邊S3,第4群組G4之對準標記…〜㈣最接近第4邊S4 。第2、第3群組G2、G3之對準標記ml〜m6配置在基板P之内部區域UA。第i、第4群組G1、G4之對準標記 nU〜m6配置在基板p之外緣區域GAe本實施形態中，第 1、第4群組Gl、G4之對準標記ml〜m6配置在外緣區域 GA中之Y部分GAy。本實施形態中，第】群組之對準 13 201245905 標記ml〜m6配置在Y部分Gay中之第ιγ部分GAyl，第 4群組G4之對準標記ml〜m6配置在γ部分Gay中之第2γ 部分GAy2。 W平係記nU、m2係在曝光又，對準標記m 1〜m6中之區域PA1、PA4之各兩端部相鄰設置，對準標記m3、m4 在曝光區域PA2、PA5之各兩端部相鄰設置，對準標記爪5、 m6則在曝光區域PA3、PA6之各兩端部相鄰設置。本實施形態中’對應在基板P上於丫軸方向分離配置之6個對準標記ml〜m6,配置有顯微鏡9A〜9F(檢測區域 AL1〜AL6)。顯微鏡9A〜9F係設置成對準標記ml〜m6可同時配置在檢測區域AL1〜AL6。對準系統9可使用顯微鏡 9A〜9F同時檢測6個對準標記ml〜m6。換言之，對準系統9可同時檢測第i群組G1之對準標記、可同時檢測第2群組G2之對準標記ml〜m6、可同時檢測第” 組G3之對準標記ml〜m6、並可同時檢測第4群組μ之對準標記ml〜m6。如前所T，基板P有可能產生變形。例如，基板p有 ^曝光處理前後進行之各種製程處理中被加熱之情形。其、”。果’即有可能產生基才反P之變形（熱變形）。又，亦有可能因基板保持部16之保持狀態，使基板P產生變形（畸變變 =基板保持部16之保持狀態，例如包含設於基板保持部限於盤W &外’基板P變形之原因並不 r πI程處理及基板保持板Ρ裝载於特: 例如’在將基、特開200卜332_號公報等所揭示之托盤的狀 201245905 態下將基板p搬入（裝盤之形狀、變形等，：持°"6之場合，會因該托向使得被搬入並保持於基板保持部16 之基板P有可能產生變形。圖4A係以不忍方式顯示基板p產生變形之狀態之一例的圖。圖4B係圖4A所示之基板p產生變形時之曝光區域 PA 1 PA6各個之變形狀態、以及以示意方式顯示第1、第 4群組Gl、G4之對準標記ml〜m6之一位置例的圖。同樣的，圖5A、圖6A、圖7A係以示意方式顯示基板p產生變形之一狀態例的圖，圖5B、圖6B、圖7B係以示意方式顯示圖5A、圖6A、圖7A所示之基板p產生變形時之曝光區域:PA1〜PA6各個之變形狀態、以及第丨、第4群組Gi、 G4之對準標記ml〜m6之一位置例的圖。又，於圖4A〜圖 7A中，未變形狀態之基板P係以虛線顯示。於圖4B〜圖 7B.中，未變形狀態之曝光區域PA 1〜PA6亦以虛線顯示。本申請案之發明人，發現在基板p產生變形之情形時，該基板P之變形圖案，如圖4A〜圖7A之各個所示，主要可分類為4個變形圖案（類型化）。圖4A所示之變形圖案’係變形成第1X部分GAxl(第 1邊S1)及第2X部分GAx2(第2邊S2)相對基板p之中心弯向外側、第1Y部分GAyl(第3邊S3)及第2Y部分GAy2(第 4邊S4)相對基板P之中心彎向内側之變形圖案。圖5A所示之變形圖案’係變形成第1X部分GAxl(第 1邊S1)及第2X部分GAx2(第2邊S2)相對基板P之中心彎向内側、第ιγ部分GAyl(第3邊S3)及第2Y部分GAy2(第 15 201245905 4邊S4)相對基板p之中心彎向外側之變形圖案。圖6A所示之變形圖案，係變形成第lx部分GAx 1 (第 1邊S 1)之中央部相對基板p之中心向外側突出、第2X部分GAx2(第2邊S2)之中央部相對基板P之中心向内側突出、第1Y部分GAyl(第3邊S3)之+ Y側之端較_ Y側之端位於一X側、第2Y部分GAy2(第4邊S4)之+ Y側之端較一 Y側之端位於+ X側之變形圖案。圖7A所示之變形圖案，則係變形成第lx部分GAxl(第 1邊S 1)之中央部相對基板p之中心向内側突出、第2χ部分GAx2(第2邊S2)之中央部相對基板P之中心向外側突出、第1Y部分GAyl(第3邊S3)之+ Y側之端較一Y侧之端位於+ X側、第2Y部分GAy2(第4邊S4)之+ Y側之端較一 Y側之端位於—X側之變形圖案。以下之説明中’將圖4A所示之基板P之變形圖案適當的稱為第1變形圖案、將圖5A所示之基板P之變形圖案適當的稱為第2變形圖案、將圖6A所示之基板P之變形圖案適當的稱為第3變形圖案、將圖7A所示之基板P之變形圖案適當的稱為第4變形圖案。又’以下之説明中，為簡單起見，雖以外緣區域GA之變形係第1邊S1、第2邊S2、第3邊S3及第4邊S4中之至少一個變形的情形為例加以説明，但第1邊S 1之變形係包含第IX部分GAxl之變形的概念、第2邊82之變形係包含第2X部分GAx2之變形的概念、第3邊S3之變形係包含第1Y部分GAyl之變形的概念、第4邊S4之變形係 16 201245905 包含第2Y部分GAy2之變形的概念。如圖4B、圖5B、圖6B、圖7B所示，基板P之曝光區域PA1〜PA6之各個會隨著基板p之第1、第2、第3、第 4變形圖案而變形。此外，對準標記^1〜m6之各個亦會隨著基板P之第1、第2、第3'第4變形圖案而位移。第1 群組G1之對準標記ml〜m6會隨著外緣區域Ga之第1Y 部分GAyl之變形而位移，第4群組G4之對準標記mi〜 m6昨會隨著外緣區域ga之第2Y部分GAy2之變形而位移。如圖4A所示’本實施形態令，第1變形圖案係基板p 之第3邊S3及第4邊S4分別以描繪2次曲線之方式變形的變形圖案。換言之，第1變形圖案係一能以2次式表示幕3邊S3及第4邊S4之各個的變形圖案。如圖5 A所示，本實施形態中，第2變形圖案係基板p 之第3邊S3及第4邊S4分別以描繪2次曲線之方式變形的變形圖案。換言之，第2變形圖案係一能以2次式表示第3邊S3及苐4邊S4之各個的變形圖案。如圖6A所示，本實施形態中，第3變形圖案係基板p 之第3邊S3及第4邊S4分別以描繪相對γ軸傾斜之直線 =方式變形的變形圖案。換言之，第3變形圖案係一能以i 式表示第3邊S3及第4邊S4之各個的變形圖案。如圖7A所示，本實施形態中，第4變形圖案係基板？之苐3邊S3及第4邊S4分別以描繪相對γ軸傾斜之直線 =方式變形的變形圖案。換言之，第4變形圖案係一能以ι 人式表不第3邊S3及第4邊S4之各個的變形圖案。 17 201245905 本申請案之發明人，發現會依據第3邊S3及第4邊S4 之變形狀態’決定第1邊S1及第2邊S2之變形狀態。換言之，發明人發現了第！邊81及第2邊82之變形狀態與第3邊S3及第4邊S4之變形狀態間之相關關聯。亦即’發明人發現可藉由取得與第3邊S3及第4邊s4 之邊形相關之資A，並根據该取得之結果與預算決定之既定關係式（關聯式），來取得（推定）與第1邊S1及第2邊S2 之變形相關之資訊。又，本實施形態中，變形狀態包含變形程度、變形後之形狀、及變形量（未變形之狀態與產生變形之狀態的差）中之至少一種。本實施形態中’與第3邊S3及第4邊S4之變形相關之資訊，可藉由測量對準標記m 1〜m6來取得。對準標記 ml〜m6會依據基板P之變形而位移。配置在含第3邊S3 之第1Υ部分GAyl之第1群組G1之對準標記ml〜m6依據第3邊S3(第1Y部分GAyl)之變形而位移，配置在含第 4邊S4之第2Y部分GAy2之第4群組G4之對準標記ml 〜m6則依據第4邊S4(第2Y部分GAy2)之變形而位移。本實施形態中，對準系統9可測量對準標記ml〜m6。因此，控制裝置5藉由使用對準系統9測量基板P之第i群組G1 之對準標記m 1〜m6，即能根據該測量結果取得與第3邊 S3之變形相關之資訊。又，控制裝置5藉由使用對準系統 9測量基板P之第4群組G4之對準標記ml〜rri6，即能根據該測量結果取得與第4邊S4之變形相關之資訊。 18 201245905 定既定關係式可根據例如前置實驗或模擬結果加以決既疋關係式可以是丨 m ^ μ ^ -λ. -人式、亦可以是2次式》當然，既疋關係式亦可以是3 Ρ 3 q 之夕項式。本實施形態中， ^ 3及第4邊84係以描繪2次曲線之方式變形之情形時，關係式乃 m ^ ^ 、用2 -人式。換言之，基板P之 k形係第1變形圖案及第2 I形圖案中之至少一方時，採用2次式作為關係式。 w 又，本實施形態中，其始D 4松将以;K洽古始土板P之第3邊S3及第4邊S4 係以描繪直線之方式變形之匱形時，關係式採用1次式。換5之，基板P之變形係第3 父化圖案及第4變形圖案中之至少一方時’採用1次式作為關係式。亦即，本實施形態中，係預券The light-emitting EL regions PR 1 to PR7 are irradiated for exposure. The projection regions PR1 to PR7 are irradiated with respect to the exposure light E L emitted from the respective projection optical systems PL1 to PL7. In the present embodiment, the projection system ps. projects the image of the pattern onto the different seven projection areas, and the respective forked optical system PS projects the image of the pattern of the mask M onto the substrate P at a predetermined projection magnification. In the portion of the projection area pR1 to pR7. The substrate stage 2 can move the substrate stage 2 with respect to the projection area pRi while holding the substrate p, and has the substrate holding portion 16 that can hold the substrate p. The substrate holding portion 6 includes a chuck mechanism that can vacuum-adsorb the substrate p, and the substrate .p is held to be released. In the present embodiment, the substrate holding portion 16 holds the substrate p such that the surface (exposure surface) of the substrate p is substantially parallel to the χγ plane. The drive system 4 includes, for example, a linear motor, and can be guided on the guide surface of the base plate 1 Move the substrate stage 2 up. In the present embodiment, the substrate stage 2 is moved by the drive system 4 to move the X-axis, the γ-axis, the z-axis, and the X-axis on the guide surface 10G while the substrate holding portion 16 holds the substrate p. 6, direction 0 and direction 02. The interferometer system 6' has a laser 201245905 interferometer unit 6A for measuring the position information of the reticle stage 1, and a laser interferometer unit OB for measuring the position information of the substrate stage 2. The laser interferometer unit 6A can measure the position information of the reticle stage j using a measuring mirror (min*〇r) lR disposed on the reticle stage. The laser interferometer unit 6B can measure the position information of the substrate stage 2 using the measuring mirror 2R disposed on the substrate stage 2. In the present embodiment, the interferometer system 6 can measure the position information of each of the reticle stage y and the substrate stage 2 in the x-axis, the γ-axis, and the Χ axis direction using the laser interferometer units 6A and 6B. When the exposure processing of the substrate ρ is performed or when a predetermined measurement process is performed, the control device 5 activates the drive systems 3 and 4 to perform the mask stage (mask) and the substrate stage based on the measurement result of the interferometer system 6. 2 (substrate ρ) position control. The alignment system 9 measures the alignment marks provided on the substrate ρ. The alignment system 9 is a so-called off-axis alignment system having a plurality of microscopes 9A to 9F disposed opposite to the surface of the substrate ρ held by the substrate carrier 2. Each of the microscopes 9A to 9F has a projection unit that irradiates the detection areas a1 to AL6 with the detection light, and a light-receiving unit that can obtain an optical image of the alignment marks arranged in the detection areas AL1 to AL6. The control device 5 performs an exposure process in such a manner that the pattern image of the mask μ formed by the projection system PS is superimposed on the pattern formed on the substrate ρ. At the time of exposure processing, the control device 5 measures the alignment mark of the substrate ,, and performs alignment processing for aligning the pattern of the substrate Ρ and the mask 根 according to the measurement result of the alignment mark. 3 is a schematic view showing a positional relationship β in the plane including the surface of the substrate p, such as the projection regions PR1 to PR7 of the projection system PS and the detection regions AL1 to AL6 of the alignment system 9 and the substrate Ρ. As shown in Fig. 3, in the present embodiment, the outer shape of the substrate ρ is a quadrangle. In the present embodiment, the shape other than the substrate 系 is a rectangle having a length in the z-axis direction. Of course, the shape of the substrate 亦 may be a square or a rectangle elongated in the γ-axis direction. The substrate Ρ has 4 sides. The substrate ρ has two sides W and S2 which are substantially parallel to the axial direction, and two sides s3 and s which are substantially parallel to the γ-axis direction. In the following description, the substrate ρ has two parallel axes substantially parallel to the x-axis direction. One side of the side Sb is appropriately referred to as a side s and the other side is appropriately referred to as a second side S2. In the present embodiment, the side of the iiisi# + Y side and the side of the second side S2 are -γ Further, one side of the two sides S3 and s" in which the substrate p has substantially parallel to the Y-axis direction is appropriately referred to as a third side S3, and the other side is appropriately referred to as a fourth side S4. In the present embodiment, the third side S3 is the side of the X side and the side of the fourth side S4 is the side of the + side. In the following description, the substrate including the end (side) of the substrate p is appropriately referred to as the outer edge region GA. Further, the region in which the substrate is located inside the outer edge region GA is appropriately referred to as an inner region. Hey. The inner region IM is a region including the center of the substrate P. The edge region ga is a region around the inner region UA. Further, the portion of the outer edge region GA that is long (extended) in the direction of γ "1 τ π Υ" It is called the Υ part GAy and will be the X part GAX on the X axis. Appropriate to the extended portion In the present embodiment, the Y portion Gay includes a first Y portion GAyl extending from the third side S3 and a second Y portion GAy2 extending in the γ-axis direction: 201245905 fourth side S4. The X portion GAx includes a IX portion G Αχ 1 including a first side S1 extending in the X-axis direction, and a second Χ portion GAx2 including a second side S2 extending in the X-axis direction. In the Gay portion Gay, the first YY portion GAyl is disposed on the X side with respect to the center of the substrate P, and the second Y portion GAy2 is disposed on the +X side with respect to the center of the substrate P. In the X portion GAx, the first X portion GAx 1 is disposed on the +Y side with respect to the center of the substrate P, and the second X portion GAx2 is disposed on the Y side with respect to the center of the substrate P. As shown in Fig. 3, in the present embodiment, the surface of the substrate P has a plurality of exposure regions (processed regions) ΡΑ1 to ΡΑ6 in which the pattern image of the mask 被 is projected. In the present embodiment, the surface of the substrate has six exposure regions ΡΑ1 to ΡΑ6. The exposure areas ΡΑ1, ΡΑ2, and ΡΑ3 are arranged at intervals in the z-axis direction, and the exposure areas ΡΑ4, ΡΑ5, and ΡΑ6 are arranged at substantially equal intervals in the z-axis direction. The exposure areas ΡΑ 2, ΡΑ 3 are arranged on the + X side with respect to the exposure areas ΡΑ 4, ΡΑ 5, and ΡΑ 6 . The exposure areas ΡΑ1 to ΡΑ6 are arranged in the internal area UA of the substrate. In the present embodiment, each of the projection regions PR1 to PR7 has a trapezoidal shape in the pupil plane. In the present embodiment, the projection regions PR1, PR3, PR5, and PR7 of the projection optical systems PL1, PL3, PL5, and PL7 are arranged at substantially equal intervals in the z-axis direction, and the projection regions PR2 and PR4 of the projection optical systems PL2, PL4, and PL6 are projected. The PR6 is arranged at substantially equal intervals in the x-axis direction. The projection areas PR1, PR3, PR5, and PR7 are placed on the X side with respect to the projection areas PR2, PR4, and PR6. Further, projection areas PR2, PR4, and PR6 are disposed between the projection areas PR1, PR3, PR5, and PR7 in the x-axis direction. In the present embodiment, the detection areas AL1 to AL6 12 201245905 of the microscopes 9 Α to 9F are disposed on the -X side with respect to the projection areas PR1 to PR7. The detection areas AL1 to AL6 are arranged apart in the Y-axis direction. In the plurality of detection areas Au to al6, the distance between the outer two detection areas AL1 (AL5) and the detection area AL2 (AL6) in the Y-axis direction and the outer sides of the plurality of exposure areas pA1 to pA6 in the γ-axis direction are two The interval between the γ side edge of one of the exposure regions pA1 (PA4) and the edge of the + Y side of the exposure region PA3 (PA6) is substantially equal. The alignment system 9 detects a plurality of alignment marks ~m6 provided on the substrate p. In the present embodiment, six alignment marks are arranged on the substrate p in the γ-axis direction. The groups of the alignment marks ml to m6 are arranged at four positions in the x-axis direction. ! In each group, the alignment marks ml to m6 are arranged separately in the X-axis direction. Each of the four groups is separated and arranged in the γ-axis direction. In the following description, the group located on the most X side among the four groups of the alignment marks m 1 to m6 is appropriately referred to as the first! In the group G1, the group on the -X side of the i-th group G1 is appropriately referred to as the second group G2, and the group on the X side of the second group G2 is appropriately referred to as the third group G3. The group located on the most +x side is appropriately referred to as the fourth group G4. In the i-th group to the fourth group (1) to the alignment marks ml to m6, the alignment marks mi to m4 of the first group G1 are closest to the third side S3, and the alignment marks of the fourth group G4 are ... (4) Closest to the 4th side S4. The alignment marks ml to m6 of the second and third groups G2 and G3 are arranged in the inner area UA of the substrate P. The alignment marks nU to m6 of the i-th and fourth groups G1 and G4 are arranged on the outer edge region GAe of the substrate p. In the present embodiment, the alignment marks ml to m6 of the first and fourth groups G1 and G4 are disposed outside. The Y portion GAy in the edge region GA. In the present embodiment, the alignment of the first group 13 201245905 marks the ml to m6 in the Yth portion GAy in the Y portion Gay, and the alignment marks ml to m6 in the fourth group G4 are arranged in the γ portion Gay. 2γ part GAy2. The W flats nU and m2 are adjacent to each other at the respective end portions of the regions PA1 and PA4 in the alignment marks m1 to m6, and the alignment marks m3 and m4 are at the respective ends of the exposure regions PA2 and PA5. The portions are adjacently disposed, and the alignment mark claws 5 and m6 are disposed adjacent to both end portions of the exposure regions PA3 and PA6. In the present embodiment, the six alignment marks ml to m6 which are disposed apart from each other on the substrate P in the z-axis direction are disposed, and the microscopes 9A to 9F (detection regions AL1 to AL6) are disposed. The microscopes 9A to 9F are arranged such that the alignment marks ml to m6 can be simultaneously arranged in the detection areas AL1 to AL6. The alignment system 9 can simultaneously detect six alignment marks ml to m6 using the microscopes 9A to 9F. In other words, the alignment system 9 can simultaneously detect the alignment mark of the i-th group G1, can simultaneously detect the alignment marks ml~m6 of the second group G2, and can simultaneously detect the alignment marks ml~m6 of the first group G3, The alignment marks ml to m6 of the fourth group μ can be simultaneously detected. As before, the substrate P may be deformed. For example, the substrate p is heated in various process processes performed before and after the exposure process. ,". It is possible to produce a deformation (thermal deformation) of the base. Further, the substrate P may be deformed by the holding state of the substrate holding portion 16 (distortion = the state in which the substrate holding portion 16 is held, for example, the substrate holding portion is limited to the disk W & In the state of the tray, the substrate p is carried in the state of the tray, which is disclosed in the form of the tray disclosed in JP-A No. 200-332, pp. In the case of the deformation or the like, the substrate P that is carried in and held by the substrate holding portion 16 may be deformed by the support. Fig. 4A shows an example in which the substrate p is deformed in an unbearable manner. Fig. 4B shows the deformation state of each of the exposure areas PA 1 PA6 when the substrate p shown in Fig. 4A is deformed, and the alignment marks ml~m6 of the first and fourth groups G1 and G4 are schematically shown. FIG. 5A, FIG. 6A, and FIG. 7A are diagrams schematically showing an example of a state in which the substrate p is deformed, and FIGS. 5B, 6B, and 7B show FIG. 5A and FIG. 6A, the substrate p shown in FIG. 7A is exposed when deformed The area is a deformed state of each of PA1 to PA6, and a map of one of the alignment marks ml to m6 of the fourth and fourth groups Gi and G4. Further, in FIGS. 4A to 7A, the substrate is in an undeformed state. P is shown by a broken line. In Figs. 4B to 7B, the exposure regions PA 1 to PA6 in an undeformed state are also shown by broken lines. The inventors of the present application found that the substrate P is in the case where the substrate p is deformed. The deformation pattern, as shown in each of FIGS. 4A to 7A, can be mainly classified into four deformation patterns (typed). The deformation pattern shown in FIG. 4A is transformed into the first X portion GAx1 (the first side S1) and The second X-part GAx2 (the second side S2) is bent outward toward the center of the substrate p, and the first Y-part GAyl (third side S3) and the second Y-part GAy2 (fourth side S4) are bent inwardly from the center of the substrate P. The deformation pattern shown in FIG. 5A is formed such that the first X portion GAx1 (first side S1) and the second X portion GAx2 (second side S2) are bent inward with respect to the center of the substrate P, and the first γ γ portion GAyl (third The side S3) and the second Y part GAy2 (the 15th 201245905 4 side S4) are curved outwardly with respect to the center of the substrate p. The deformation pattern shown in Fig. 6A The central portion of the lx portion GAx 1 (the first side S 1 ) is formed to protrude outward from the center of the substrate p, and the central portion of the second X portion GAx2 (the second side S2) protrudes inward from the center of the substrate P, The end of the +Y portion GAyl (the third side S3) on the Y side is located on the X side, the second Y part GAy2 (the fourth side S4), the end of the Y side is located at the end of the Y side. The deformation pattern on the X side. In the deformation pattern shown in FIG. 7A, the central portion of the first x-th portion GAx1 (first side S1) is formed to protrude inward from the center of the substrate p, and the central portion of the second meander portion GAx2 (second side S2) is opposed to the substrate. The center of P protrudes outward, and the end of the Y-side of the first Y-part GAyl (the third side S3) is located on the +Y side of the end of the Y-side and the end of the Y-side of the second Y-part GAy2 (the fourth side S4). The deformed pattern on the -X side is located at the end of the Y side. In the following description, 'the deformation pattern of the substrate P shown in FIG. 4A is appropriately referred to as a first deformation pattern, and the deformation pattern of the substrate P shown in FIG. 5A is appropriately referred to as a second deformation pattern, as shown in FIG. 6A. The deformation pattern of the substrate P is appropriately referred to as a third deformation pattern, and the deformation pattern of the substrate P illustrated in FIG. 7A is appropriately referred to as a fourth deformation pattern. In the following description, for the sake of simplicity, the case where the deformation of the outer edge region GA is at least one of the first side S1, the second side S2, the third side S3, and the fourth side S4 is described as an example. However, the deformation of the first side S 1 includes the concept of the deformation of the IX part GAx1, the modification of the second side 82 includes the concept of the deformation of the second X part GAx2, and the deformation of the third side S3 includes the first Y part GAyl. The concept of deformation, the deformation of the fourth side S4, 16 201245905, includes the concept of the deformation of the second Y part GAy2. As shown in Figs. 4B, 5B, 6B, and 7B, each of the exposure regions PA1 to PA6 of the substrate P is deformed in accordance with the first, second, third, and fourth deformation patterns of the substrate p. Further, each of the alignment marks ^1 to m6 is also displaced in accordance with the first, second, and third 'fourth deformation patterns of the substrate P. The alignment marks ml~m6 of the first group G1 are displaced along with the deformation of the first Y part GAyl of the outer edge region Ga, and the alignment marks mi~m6 of the fourth group G4 will follow the outer edge region ga yesterday. The second Y-part GAy2 is displaced and displaced. As shown in Fig. 4A, in the present embodiment, the third side S3 and the fourth side S4 of the first modified pattern based substrate p are deformed in a manner of drawing a secondary curve. In other words, the first deformed pattern is a deformable pattern in which each of the three sides S3 and the fourth side S4 of the screen can be expressed in a quadratic manner. As shown in Fig. 5A, in the present embodiment, the third side S3 and the fourth side S4 of the second modified pattern based substrate p are deformed in a manner of drawing a secondary curve. In other words, the second deformed pattern is a deformable pattern in which each of the third side S3 and the fourth side S4 can be expressed in a quadratic manner. As shown in FIG. 6A, in the third embodiment, the third side S3 and the fourth side S4 of the third undulating pattern-based substrate p are deformed by a straight line that is inclined with respect to the γ-axis. In other words, the third deformation pattern is a deformation pattern in which each of the third side S3 and the fourth side S4 can be expressed by i. As shown in Fig. 7A, in the present embodiment, the fourth modified pattern is a substrate? Then, the three sides S3 and the fourth side S4 are respectively deformed patterns that are deformed by a straight line that is inclined with respect to the γ axis. In other words, the fourth deformation pattern is a deformation pattern in which each of the third side S3 and the fourth side S4 can be represented by the ι. 17 201245905 The inventors of the present application found that the deformation states of the first side S1 and the second side S2 are determined based on the deformation state of the third side S3 and the fourth side S4. In other words, the inventor found the first! The deformation state of the side 81 and the second side 82 is related to the deformation state of the third side S3 and the fourth side S4. In other words, the inventor has found that the asset A related to the edge of the third side S3 and the fourth side s4 can be obtained, and the estimated relationship (correlation) determined based on the result of the acquisition and the budget is obtained (estimated) Information related to the deformation of the first side S1 and the second side S2. Further, in the present embodiment, the deformed state includes at least one of the degree of deformation, the shape after the deformation, and the amount of deformation (the difference between the state of the undeformed state and the state in which the deformation occurs). The information relating to the deformation of the third side S3 and the fourth side S4 in the present embodiment can be obtained by measuring the alignment marks m 1 to m6. The alignment marks ml to m6 are displaced in accordance with the deformation of the substrate P. The alignment marks ml to m6 arranged in the first group G1 including the first partial portion GA3 of the third side S3 are displaced according to the deformation of the third side S3 (the first Y portion GAyl), and are arranged in the fourth side S4. The alignment marks ml to m6 of the fourth group G4 of the 2Y portion GAy2 are displaced in accordance with the deformation of the fourth side S4 (the second Y portion GAy2). In the present embodiment, the alignment system 9 can measure the alignment marks ml to m6. Therefore, the control device 5 measures the alignment marks m 1 to m6 of the i-th group G1 of the substrate P by using the alignment system 9, i.e., the information relating to the deformation of the third side S3 can be obtained based on the measurement result. Further, the control device 5 measures the alignment marks ml to rri6 of the fourth group G4 of the substrate P by using the alignment system 9, i.e., the information relating to the deformation of the fourth side S4 can be obtained based on the measurement result. 18 201245905 The established relationship can be determined according to, for example, pre-experimental or simulation results. The relationship can be 丨m ^ μ ^ -λ. - human or two-time. Of course, the relationship can also be It is the eve of the 3 Ρ 3 q. In the present embodiment, when the ^3 and the fourth side 84 are deformed in the manner of drawing a secondary curve, the relational expression is m ^ ^ and the 2-way type is used. In other words, when the k-shape of the substrate P is at least one of the first deformation pattern and the second I-shaped pattern, the quadratic equation is used as the relational expression. w. In the present embodiment, the first D 4 is loosened; the third side S3 and the fourth side S4 of the K-Pseudo-earth soil plate P are deformed in a straight line, and the relationship is used once. formula. In the case where the deformation of the substrate P is at least one of the third patriarchal pattern and the fourth morphing pattern, the first-order expression is used as the relational expression. That is, in the present embodiment, the coupon is a coupon.

于預先羊備與第3邊S3(第1Y 部分GAyl)及第4邊S4(第2Y邱八γδ ^ 邛刀GAy2)之變形相應之複數個關係式。該等複數個關係式，、人數不同。本實施形態中，至預先準備1次式之關係式 # & . 保式與2次式之關係式，依據第3邊S3及第4邊S4之變形妝能t k形狀態，從複數個關係式中選擇既定關係式。亦即，當第λ、县c。田弟3邊S3及第4邊S4係以描 ^會2次曲線之方式變形時，係選擇預先準備之i次式關# 式及2次式關係式中之2次式關係式，當第Μ”及第2 邊S2係以描繪直線之方式變形時，則選擇預先毕備… 式關係式及2次式關係式中之1次式關係式。例如，根據對準线9之測量結果，取得基板p之第3 邊S3及第4邊S4之變形狀態係描綠既定2次曲線之變形 19 201245905 狀態的it形時’控制裝置5即可根據該取得之結果（與既定 ^次曲線相關之資訊）與預先決定之既定關係式（2次式），取付（推疋）第1邊S 1及第2邊S2之變形狀態。又，根據對準系統9之測量結果，取得基板p之第3邊s3及第4邊^ 之變形狀態係描繪㈣直線之變形狀態的情形時，控制裝置5即卩根據該取得之結果（與既定直線相關之資訊）斑預先決定之既定關係式（1:欠式），取得（推定）第USi及第2 邊S2之變形狀態。又，當設定既定關係式為2次式時，根據該關係式決定之第及第2邊S2之變形狀態係以2次式表干：換言之，當設定既;t關係式為2次式時，第litsi及第2 邊S2係以描繪既定2次曲線之方式變形。又’當設定既定關係式為1次式時，根據該關係式決定之第1邊S1及第2邊S2之變形狀態係以1次式表示換言之’當設定既定關係式為，次式時，第丨邊“及第邊S2係以描繪既定直線(含2個以上之直線)之方式變形。 :次：參照圖8之流程圖、及圖9〜圖12之示意圖説明本貫施形態之一曝光方法例。曝光前之基板P被既定搬送裝置搬送(裝載持部16。於基板P設有對準標aml〜m6e控制裝置= 取得與被保持在基板保持部16之基p之變形相關之資訊，使用對準系統9測量被㈣在該基板保持部丨 P之第1群組G1之對準標記ml〜m6、及第4群組之準標記m 1〜m6。中 20 201245905 • 首先’控制裝置5控制以基板保持部i 6保持基板p之基板載台2之位置，以使第】群組G1之對準標記…一配置在對準系統9之檢測區域AU〜AL6,制裝置$ 一邊使用雷射干涉儀系統6測量基板載台2之位置、一邊使用對準系統9測量第！群組⑴之對準標記(步驟 SA1)。其次’控制裝置5控制以基板保持部⑹呆持基板p之基板載台2之位置，以使第4群組G4之對準標記配置在對準系統9之檢測區域AL1〜AL6。控制裝置5 一邊使用雷射干涉儀系統6測量基板載台2之位置、一邊使用對準系統9測量笛4雜έΒ r» /1 & 置第4群組〇4之對準標記ml〜m6(步驟 SA2)。如此’控制裝置5即能求出在以雷射干涉儀系統6規定之座標系中之第1群組G1之對準標記nU〜m6各個之位置、與在以雷射干涉儀系統6規定之座標系中之第4群组 G4之對準標記ml〜m6各個之位置。又控制裝置5可根據以步驟SA1所測量之第丄群组 ⑴之對準標記.Μ之測量結果，取得與第3邊S3之變形相關之資戒。此外，控制裝置5可根據以步驟SA2測量之第4群組G4之對準標記ml〜m6之測量結果，取得與第 4邊S4之變形相關之資訊。又’控制裂置5可根據第1群乡且G1之對準標記ml〜結果、及第4群組之對準標記〜之測直結果中之至少一方，说# t 取讦與基板P之變形相關之資訊。 21 201245905 又’控制裝置5可根據對準系統9之測量結果，求出第1群組G1之對準標記m 1〜m6之位移量、及第4群組 G4之對準標記m 1〜m6之位移量。又，對準標記ml〜m6之位移量，係指在基板p未變形之狀態下於基板P上之對準標記ml〜m6之位置、與基板P產生變形之狀態下於基板P上之對準標記m 1〜m6之位置的差。準標記ml〜爪6後測量第4群組G4之對準標記ml〜m6, 當然亦可設定為在測量第4群組G4之對準標記…〜^^後測量第1群組G1之對準標記ml〜。 I其次，控制裝置5根據第丨、第4群組G1、G4之對準 =。己m 1〜m 6之測量結果，求出基板p之變形之線性成分（步驟 S A 3 ) 〇基板P之變形可分為線性成分與非線性成分。控制裝基板p之ir性成分及非線性成分中之線性成分。又，二定之該格子點於= 格子點的位移量，基板p相對於ΘΖ方向之旋轉成八於丫軸方向之變位成分、疋轉成分、於X軸方向於γ軸方向之定屮+ \ 疋比（scaling)成分、其次，控二以及正交度中之至少-種。 ^ *裝置5根據在步驟SA3中求Α & 變形之線性成分，欠出之基板Ρ之成分之對基板曝光時“修正該線性性修正值（線性修正量）（步驟SA4)e 22 201245905 以下之説明中，將以步驟SA4求出之線性修正值適當的稱為板材（plate)線性修正值。田其次，控制裝置5根據第1、第4群組G1、G4之對準標記ml〜m6之測量結果，求出基板P之變形之非線性成分（步驟SA5)。取本實施形態中，控制裝置5可根據以步驟…求出之基板p之變形之線性成分與m 4群組gi、g4之對準標記ml〜m6之測量結果，求出基板p之變形之非線性成分。本實施形態中’控制裝置5可根據第i、第4群組⑴、 G4之對準標記ml〜m6之測量結果，取得包含線性成分及非線性成分雙方之與基板P之變形相關之資訊。控制裝置5 可根據與基板P之變形相關之資訊（根據對準標記心⑽ 之測量結果求出者）、與以步驟SA3求出之基板？之變形之線性成分之差’求出基板P之變形之非線性成分。如上所述’對準標記ml〜m6會依據基板p之變形而移第1群、，且G1之對準標記ml〜m6，主要係依據第3 邊S3之變形狀態而位移，接近第4邊s4之第*群組以之對準標記mUh主要係依據第4邊84之變形狀態而位移。因此’控制裝置5可根據使用對準系統9測量第i、第 4群組G1、G 4之斜進;^ m 1 ~ ^ ^ 心耵+铩》己ml〜m6之位置（例如在以雷射干涉儀系統6規定之座標系中之位置)的結果，求出帛3、第4 邊S3、S4疋否有以2次曲線及直線中之任一變形狀態產生變形。此外’控制裝置5可根據第i、第4群組⑴、G4之對準標記ml〜m6之測量結果，求出基板p是否有以第i 23 201245905 變形圖案、第2變形圖案、第3變形圖案及第4變形圖案中之任一變形圖案產生變形。例如，根據對準系統9之測量結果，判斷連結第】 '第 4群組G〗、G4各個之對準標記ml〜m6之線描繪出2次曲線之情形時，控制裝置5即判斷第3、第4邊s3、S4已變形成描繪出2次曲線，而能判斷基板p已以第！變形圖案及第2變形圖案之至少一方產生變形。具體而言，當連結對準標記mi，之線，如圖4B所示，已相對基板户之中心向内側彎曲時，控制裝置5即判斷基板p已以第A plurality of relational expressions corresponding to the deformation of the third side S3 (the first Y-part GAyl) and the fourth side S4 (the second Y-eight γ δ 邛 GA GA GAy2) are prepared in advance. These plural relationships are different in number. In the present embodiment, the relational expressions of the first-order relationship and the second-order equation are prepared in advance, and the relationship between the third side S3 and the fourth side S4 is determined from the tk-shaped state, and a plurality of relationships are obtained. Select the established relationship in the formula. That is, when the λ, the county c. When the 3rd S3 and the 4th S4 of the Tiandi are deformed in the manner of the second curve, the second-order relationship between the i-type and the second-order relationship prepared in advance is selected. When the Μ" and the second side S2 are deformed so as to draw a straight line, the first-order relational expression in the equation and the second-order relation is selected in advance. For example, according to the measurement result of the alignment line 9, Obtaining the deformation state of the third side S3 and the fourth side S4 of the substrate p is a deformation of the green predetermined secondary curve 19 The current form of the 201245905 state can be controlled by the control device 5 based on the obtained result (related to the predetermined curve) The information is determined in accordance with a predetermined relationship (secondary formula), and the deformation state of the first side S 1 and the second side S2 is taken (reduced). Further, according to the measurement result of the alignment system 9, the substrate p is obtained. When the deformation state of the third side s3 and the fourth side is the case where the deformation state of the straight line is drawn (4), the control device 5 determines the predetermined relationship based on the result of the acquisition (information related to the predetermined straight line). : under-type), obtain (estimate) the deformation state of the USi and the second side S2. When the relational expression is a quadratic formula, the deformation state of the first and second sides S2 determined according to the relational expression is performed in a quadratic manner: in other words, when the relationship is set to be the second-order equation, the litsi and The second side S2 is deformed so as to describe a predetermined second-order curve. When the set relational expression is the first-order equation, the deformation state of the first side S1 and the second side S2 determined according to the relational expression is once. In other words, when the set relational expression is set to the following formula, the third side and the first side S2 are deformed in such a manner as to depict a predetermined straight line (including two or more straight lines). : Times: An example of an exposure method of the present embodiment will be described with reference to the flowchart of FIG. 8 and the schematic diagrams of FIGS. 9 to 12. The substrate P before the exposure is transported by the predetermined transport device (the loading portion 16 is provided. The substrate P is provided with the alignment mark aml to m6e control device = the information relating to the deformation of the base p held by the substrate holding portion 16 is obtained, and the pair is used. The bare system 9 measures (4) the alignment marks ml to m6 of the first group G1 of the substrate holding portion 丨P, and the alignment marks m1 to m6 of the fourth group. 20 201245905 • First, the control device 5 controls The substrate holding portion i 6 holds the position of the substrate stage 2 of the substrate p so that the alignment marks of the first group G1 are disposed in the detection areas AU to AL6 of the alignment system 9, and the laser is used while the device $ is being used. The interferometer system 6 measures the position of the substrate stage 2, and measures the alignment mark of the group (1) using the alignment system 9 (step SA1). Next, the control device 5 controls the substrate holding the substrate p with the substrate holding portion (6). The position of the stage 2 is such that the alignment marks of the fourth group G4 are arranged in the detection areas AL1 to AL6 of the alignment system 9. The control device 5 measures the position and side of the substrate stage 2 using the laser interferometer system 6. Using the alignment system 9 to measure the flute 4 rέΒ r» /1 & set the fourth group The alignment marks ml to m6 of 〇4 (step SA2). Thus, the control device 5 can determine the alignment marks nU to m6 of the first group G1 in the coordinate system defined by the laser interferometer system 6. The position is in the position of each of the alignment marks ml to m6 of the fourth group G4 in the coordinate system defined by the laser interferometer system 6. Further, the control device 5 can be based on the third group measured in step SA1. (1) The measurement result of the alignment mark Μ is obtained in accordance with the deformation of the third side S3. Further, the control device 5 can measure the alignment marks ml to m6 of the fourth group G4 measured by the step SA2. As a result, information relating to the deformation of the fourth side S4 is obtained. Further, the control split 5 can be based on the alignment result of the first group and the G1 alignment mark ml~ result, and the alignment mark of the fourth group. At least one of the two, said #t to take information about the deformation of the substrate P. 21 201245905 Further, the control device 5 can obtain the alignment mark m 1 of the first group G1 according to the measurement result of the alignment system 9. The displacement amount of m6 and the displacement amount of the alignment mark m 1 to m6 of the fourth group G4. Further, the displacement of the alignment mark ml~m6 The amount is the difference between the positions of the alignment marks ml to m6 on the substrate P in the state where the substrate p is not deformed, and the position of the alignment marks m1 to m6 on the substrate P in a state where the substrate P is deformed. After the standard mark ml~claw 6, the alignment mark ml~m6 of the fourth group G4 is measured, and of course, the first group G1 can be measured after measuring the alignment mark of the fourth group G4...~^^ Alignment mark ml~. I. Next, the control device 5 determines the linear component of the deformation of the substrate p based on the measurement results of the second and fourth groups G1 and G4 = m 1 to m 6 (step SA). 3) The deformation of the ruthenium substrate P can be divided into a linear component and a nonlinear component. The linear component of the ir component and the nonlinear component of the substrate p is controlled. Further, the displacement of the lattice point at the = lattice point, the rotation of the substrate p with respect to the ΘΖ direction is a displacement component of the 丫-axis direction, the 疋 transformation component, and the 屮-axis direction in the X-axis direction + \ scaling (component), second, control, and at least one of the orthogonalities. ^ * The device 5 "corrects the linearity correction value (linear correction amount) (step SA4) e 22 201245905 or less according to the linear component of the Α & deformation in step SA3, when the component of the substrate 欠 is exposed to the substrate. In the above description, the linear correction value obtained in step SA4 is appropriately referred to as a plate linear correction value. Next, the control device 5 marks the ml to m6 according to the alignment of the first and fourth groups G1 and G4. As a result of the measurement, the nonlinear component of the deformation of the substrate P is obtained (step SA5). In the present embodiment, the control device 5 can obtain the linear component of the deformation of the substrate p obtained by the step... and the m 4 group gi, The measurement result of the alignment marks g4 to m6 of g4 is used to obtain the nonlinear component of the deformation of the substrate p. In the present embodiment, the control device 5 can mark the ml to m6 according to the alignment of the i-th and fourth groups (1) and G4. As a result of the measurement, information relating to deformation of the substrate P including both the linear component and the nonlinear component is obtained. The control device 5 can obtain information based on the deformation of the substrate P (based on the measurement result of the alignment mark core (10)) And with step SA3 The difference between the linear components of the deformation of the substrate is determined as the nonlinear component of the deformation of the substrate P. As described above, the alignment marks ml to m6 shift the first group according to the deformation of the substrate p, and the alignment mark of G1 Ml~m6 is mainly displaced according to the deformation state of the third side S3, and the alignment group mUh close to the fourth group s4 is mainly displaced according to the deformation state of the fourth side 84. Therefore, the control device 5 can be used according to the use of the alignment system 9 to measure the oblique progression of the i-th and fourth groups G1, G4; ^ m 1 ~ ^ ^ 耵耵 + 铩" has the position of ml ~ m6 (for example, in the laser interferometer system As a result of the position in the predetermined coordinate system, it is determined whether the 帛3, the fourth side S3, and the S4 are deformed by any of the secondary curves and the straight line. Further, the control device 5 can be based on the i-th The measurement results of the alignment marks ml to m6 of the fourth group (1) and G4 determine whether or not the substrate p has any of the i- 23 201245905 deformation pattern, the second deformation pattern, the third deformation pattern, and the fourth deformation pattern. A deformation pattern is deformed. For example, according to the measurement result of the alignment system 9, the connection is determined] 'Group 4 G〗 When the line of the alignment marks ml to m6 of each of G4 draws a secondary curve, the control device 5 determines that the third and fourth sides s3 and S4 have been deformed to form a secondary curve, and can judge that the substrate p has been At least one of the first deformation pattern and the second deformation pattern is deformed. Specifically, when the line connecting the alignment marks mi is bent inwardly toward the center of the substrate as shown in FIG. 4B, the control device 5 Judging that the substrate p has been

變形圖案變形，而判斷已如圖5B所示f向外側時，即斷已以第2變形圖案變形。 J 又’根據對準系統9之測量結果，判斷連結第卜群組G1、G4各個之斜進# > <對羊私5己ml〜m6之線已描繪出直該線相對γ軸傾斜情時 it &S4 P _ 裝置5即判斷第3、“ 邊以S4已變形成描繪出出基板p已以第3變形i直線而能判斷生變形》且體而▲广第4變形圖案之至少-方產The deformation pattern is deformed, and when it is judged that f is outward as shown in Fig. 5B, the breakage has been deformed by the second deformation pattern. J also 'According to the measurement result of the alignment system 9, judging the oblique penetration of each of the groups G1 and G4. < The line of the sheep 5 5 ml~m6 has been drawn straight to the line relative to the γ axis In the case of the situation, it & S4 P _ device 5 judges the third, "the side of S4 has been deformed and the substrate p has been drawn with the third deformation i straight line, and the deformation can be judged" and the body is ▲ wide and the fourth deformation pattern is At least - production

二當判斷連結對準標記-116之後，P 如圖6B所示般傾斜時，控制裝置5即判斷楚變形圖案產生變形，當判斷已如二以第3 判斷基板P已以第4繊#“ 彳不般傾斜時，即可第變形圆案產生變形。控制裝置5根據對準標板p以第1變形圖牵Γ 6之測量結果，求出基 $圖案、第2變形圖變形圖案中之付Μα# 累第3k形圖案及第4 之何種變形圖案變形(步驟SA6)。 >下，舉—例而基板P之變形之非線性成分包 24 201245905 含第2變形圖案之非線性成分之情形為例加以説明。圖9 及圖10係以示思方式顯示被保持於基板保持部16、以第2 變形圖案變形之基板Ρ之變形之非線性成分之一例的圖。圖9係顯示在基板Ρ以第2變形圖案變形時之第3邊S3及第4邊S4之變形之非線性成分之一例的示意圖、圖1〇則係顯示在基板ρ以第2變形圖案變形時之第1邊si及第2 邊S2之非變形成分之一例的示意圖。如前所述’在基板Ρ以第2變形圖案變形之狀態下，設第3邊S 3及第4邊S 4係描出2次曲線，而能以2次式表示。在基板Ρ以第2變形圖案變形之狀態下，在抽出該基板Ρ之變形之非線性成分情形下，第3邊S3及第4邊S4 亦描繪一 2次曲線’能以2次式表示。 .將圖9中，在第3邊S 3之於X轴方向之非線性成分，以下，述2次式表示。 Δ xl(PY)= axPY2+ bxPY+ c …⑴ 將圖9中’在第4邊S4之於χ軸方向之非線性成分，以下述2次式表示。 Δ x2(PY)= dxPY2+ exPY+ f …⑺ 此處，PY係表示在基板ρ上之座標系（基板座標系）中之Y轴方向成分。控制裝置5，可根據以對準系統9測量對準標記mi〜 m6之結果，決定表示第3邊S3之2次式之式（1)之係數&、 b、c及表示第4邊S4之2次式之式⑺之係數d、e、f。控制裝置5可根據第i群組G1之對準標記〜爪石之 25 201245905 測里結果，藉由就式（1)實施包含擬合（fitting)處理（例如使用最小平方法之擬合處理）之既定運算處理，來求出式之係數a b、c。又，控制裝置5可根據第4群組G4之對準標記爪1〜⑽之測量結果’藉由就式⑺實施包含擬合處理之既定運算處理，來求出式⑺之係數d、e、f。 _藉上述方式，於基板P之非線性成分中，決定用以表不第3邊S3之2次式之式⑴、及用以表示第4邊$ 次式之式（2)(步驟SA7)。藉由以上動作，即完成根據對準標記mi〜m2. After judging the link alignment mark -116, P is inclined as shown in FIG. 6B, the control device 5 determines that the distortion pattern is deformed, and when it is judged that the substrate P has been judged by the third, the fourth substrate # When the tilt is not tilted, the deformation of the first deformed circle is generated. The control device 5 obtains the measurement result of the first deformation map by the alignment target p, and finds the base pattern and the deformation pattern of the second deformation pattern.付Μα# The 3k-shaped pattern and the 4th deformation pattern are deformed (step SA6). Under the example, the nonlinear component of the deformation of the substrate P 24 201245905 contains the nonlinear component of the second deformation pattern. In the case of FIG. 9 and FIG. 10, FIG. 9 and FIG. 10 are diagrams showing an example of a nonlinear component of the deformation of the substrate 保持 which is held by the substrate holding portion 16 and deformed by the second deformation pattern in a schematic manner. A schematic diagram showing an example of a nonlinear component of the deformation of the third side S3 and the fourth side S4 when the substrate 变形 is deformed by the second deformation pattern, and FIG. 1 shows the first case when the substrate ρ is deformed by the second deformation pattern. A schematic diagram of an example of a non-deformed component of the side si and the second side S2. In the state in which the substrate Ρ is deformed by the second deformation pattern, the third side S 3 and the fourth side S 4 are drawn in a quadratic curve, and can be expressed in a quadratic pattern. The second deformation pattern is formed on the substrate Ρ. In the state of deformation, in the case of extracting the nonlinear component of the deformation of the substrate ,, the third side S3 and the fourth side S4 also depict a second-order curve 'can be expressed in quadratic form. The nonlinear component of the three sides S 3 in the X-axis direction is expressed by the following equation: Δ xl (PY) = axPY2 + bxPY + c (1) The non-axis side of the fourth side S4 in Fig. 9 The linear component is represented by the following quadratic formula: Δ x2 (PY) = dxPY2+ exPY + f (7) Here, PY represents the Y-axis direction component in the coordinate system (substrate coordinate system) on the substrate ρ. According to the result of measuring the alignment marks mi to m6 by the alignment system 9, the coefficients &, b, c representing the second-order S3 of the third side S3 and the second-order expression representing the fourth side S4 can be determined. The coefficient d, e, and f of the formula (7). The control device 5 can perform the inclusion fit (fitness) according to the alignment flag of the i-th group G1 and the 25-4545 test result of the claw stone. g) The predetermined arithmetic processing of the processing (for example, the fitting processing using the least square method) is performed to find the coefficients ab and c of the equation. Further, the control device 5 can mark the claws 1 to 10 according to the alignment of the fourth group G4. The measurement result 'determines the coefficients d, e, and f of the equation (7) by performing a predetermined arithmetic processing including the fitting processing in the equation (7). _ In the above manner, the nonlinear component of the substrate P is determined to indicate The equation (1) of the second-order S3 and the equation (2) of the fourth-order equation (step SA7). By the above action, the completion according to the alignment mark mi~m

果’取得與第3邊S3及篦4 ·总C/1 , A 關之資訊。邊及第4邊S4之非線性成分之變形相式人，控制裝置5根據表示第3邊S3及第4邊S4之 "式(2)、與預先決定之既定關係 S1及第2邊S2之2次式。疋表不第！邊如以上所述’既定關係式可擬結果預先加以決定，與令關孫々士明』置貫驗、或模憶裝置S；與°玄關係式相關之資訊被儲存於記 S3: ，於&己憶裝置紱中，預先儲存有與第3、# 根撼4邊S4之變形相應之複數個關係式。控制穿置 t據對準標記〜㈣之測量結果取得之第視邊S4之變形狀態，從 3及第4 SA8)〇㈣式選擇既定關係式（步驟亦即’控制裝置5依據第3邊幻及狀I從複數個關係式中決定為之變形 S2之變报知關+达，矛1邊。及第2这支形相關之資訊所使用之關係式。邊 26 201245905 本實施形態中，當判斷基板P以第2變形圖案變形時，亦即當判斷基板P之第3邊S3及第4邊S4係變形為插綠出2人曲線時’控制裝置5即選擇2次式作為既定關係式。控制裝置5,根據與所取得之第3邊S3及第4邊S4之變形相關之資訊、與既定關係式之下述式(3)，取得與第^ 邊S1之變形相關之資訊(步驟SA9)。具體而言，控制奘番c , 土刺裝置5根據表示使用對準系統9之丨量結果及運算處理（擬合處理等）所取得之第3邊S3及第4 邊S4之變形狀態的上述切）、⑺與下述式（3)，求出表〒第1邊“之2次曲線(2次式)。又，式⑺係表示在第lit S1之於X軸方向之非線性成分的2次式。 △ yl(PX)= α x(d - a)/2xPX2+ hxPX + i ... (3) 又’控制裝置5根據與所取得之第3邊S3及第4邊^ 之變形相關之資訊、與既定關係式之τ述式⑷，取得與第 2邊S2之變形相關之資訊(步驟sai〇)。、具體而5 ’控制裝置5根據表示使用對準系統9之測量結果及運算處理（擬合處理等）所取得之第3邊s3及第\ 邊S4之變形狀態的上述式⑴、⑺與下述式⑷，求出表示第2邊S2之2次曲線（2次式卜又，式⑷係表示在第2邊 S2之於X軸方向之非線性成分的2次式。'Get information about the third side S3 and 篦4 · total C/1, A. The control unit 5 has a predetermined relationship S1 and a second side S2 between the third side S3 and the fourth side S4 based on the deformation phase of the nonlinear component of the fourth side S4. 2 times. The watch is not the first! As described above, the 'established relationship can be determined in advance, and the decision is made with the Guan Sun Shi Shi Ming, or the model memory device S; the information related to the ° Xuan relationship is stored in the record S3: In the & recall device, a plurality of relational expressions corresponding to the deformations of the 4th and #4th sides S4 are stored in advance. Controlling the deformation state of the first viewing side S4 obtained by the measurement result of the alignment mark ~(4), and selecting the predetermined relational expression from the 3rd and 4th SA8)〇(4) formulas (the step is that the control device 5 is based on the 3rd edge magic The relationship I is determined from a plurality of relations, and the relationship between the change S2 of the deformation S2, the spear 1 side, and the relationship of the information related to the second branch is used. 26 201245905 In this embodiment, When it is determined that the substrate P is deformed by the second deformation pattern, that is, when it is determined that the third side S3 and the fourth side S4 of the substrate P are deformed into a green-out two-person curve, the control device 5 selects the second-order expression as a predetermined relationship. The control device 5 acquires information related to the deformation of the first side S1 based on the information relating to the deformation of the obtained third side S3 and the fourth side S4 and the following equation (3) of the predetermined relational expression (step Specifically, in the control unit c, the soil squeezing device 5 deforms the third side S3 and the fourth side S4 obtained based on the result of the measurement using the alignment system 9 and the arithmetic processing (fitting processing, etc.). The above-mentioned cut of the state, (7), and the following formula (3), the second-order curve (second-order formula) of the first side of the table 求出 is obtained. Equation (7) represents a quadratic formula of the nonlinear component of the first lit S1 in the X-axis direction. Δ yl(PX) = α x(d - a)/2xPX2+ hxPX + i (3) Further 'control device (5) Obtain information related to the deformation of the second side S2 based on the information relating to the deformation of the third side S3 and the fourth side ^ obtained, and the equation (4) of the predetermined relationship (step sai〇). The 5' control device 5 has the above equations (1), (7) and the following equations based on the deformation states of the third side s3 and the side S4 obtained by using the measurement result of the alignment system 9 and the arithmetic processing (fitting processing, etc.). (4) The second-order curve indicating the second side S2 is obtained (the second-order equation, and the equation (4) is a quadratic equation indicating the nonlinear component in the X-axis direction of the second side S2.

Ay2(PX)= /S x(a-d)//2xPX2 +jxPX-f k ... (4) 式（3)及式（4)中，ρχ係表示在基板p上之座標系（基板座標系）中之X轴方向成分。又，係數α、石係從前置實驗或模擬等求出之既定值（比例計數）。 27 201245905 又》圖1 0中以不音大4 一 ^ 式*、、員示了以上述式（3)表示之笛！邊S1、及以式（4)表示之第2邊82。 '、如上所述，根據藉由取得與第3邊83及第4 =相關：資訊所得之係數a、d、與從前置實驗或模擬等係數α、石，在以2次式表示第1邊Si及第2邊S2 之情形時’可求出該2次之係數卜咖，))，*一· 又，於式（3)及式（4)中，1次係數h、j及0次係數卜让基板P之外形或第！、第4群組G1、G4之對準標記加、 ml之位置’無歧異的加以定出。承上所述，可根據第卜第4群組G1、G4之對準標記 ml〜m6之測量結果，取得與第3邊53及第4邊^之=形相關之資訊，根據第1、第4群組G1、G4之對準標記〜m6之測量結果與既定關係式，取得與第i邊si及第2 邊S2之變形相關之資訊。亦即，本實施形態中，控制裝置 5可根據第1、第4群組Gl、G4之對準標記ml〜m6之測量結果，取得與包含第i〜第4邊S1〜S4之基板p之外緣區域GA之變形相關之資訊。其次，控制裝置5取得與基板P之内部區域UA之變形相關之資訊（步驟SA11)。本實施形態中，控制裝置5求出在配置於基板p之内部區域UA之複數個曝光區域p a 1〜PA6之各個中之變形之非線性成分。本實施形態，如圖11及圖12所示，於複數個曝光區域PA1〜PA6之各個，定有代表之複數個位置D1〜D6。本 28 201245905 實施形態中’於1個曝光區域PA1(PA2、PA3、PA4、pA5、 PA6)雖定有6個代表之位置D1〜D6，但該位置亦可以是$ 個以下、亦可以是7個以上。如圖11之示意圖所示，本實施形態中，控制裝置5根據以式（1)及式（2)表示之2個2次式△ χ1(ργ)、△ χ2(ργ)，藉由線性内插，算出在複數個位置D1〜D6各個之於χ軸方向之非線性成分。此外，如圖12之示意圖所示，控制裝置5根據式及式⑷表示之2個2次式Δγ1(ρχ)、⑼⑽），藉由線性内插，算出在複數個位置D1〜D6各個之於γ軸方向之非Ay2(PX)= /S x(ad)//2xPX2 +jxPX-f k (4) In equations (3) and (4), ρχ denotes a coordinate system on the substrate p (substrate coordinate system) The X-axis direction component in ). Further, the coefficient α and the stone system are predetermined values (proportional counts) obtained from a preliminary experiment or a simulation. 27 201245905 Also in Figure 1 0, the sound is expressed in the above formula (3). The side S1 and the second side 82 represented by the formula (4). ' As described above, based on the coefficients a and d obtained by the information related to the third side 83 and the fourth = information, and the coefficient α and stone from the pre-experimental experiment or simulation, the first expression is expressed in quadratic form. In the case of the side Si and the second side S2, 'the coefficient of the second time can be obtained.), *1, and in the equations (3) and (4), the coefficients h, j, and 0 are once. Sub-coefficient allows the substrate P to be shaped or the first! The alignment marks of the fourth group G1 and G4 are added, and the position of the ml is determined without any difference. According to the measurement results of the alignment marks ml~m6 of the fourth group G1 and G4, the information related to the shape of the third side 53 and the fourth side can be obtained according to the first and the first The measurement results of the alignment marks ~m6 of the groups G1 and G4 are related to the predetermined relationship, and information relating to the deformation of the i-th side si and the second side S2 is obtained. In other words, in the present embodiment, the control device 5 can acquire the substrate p including the i-th to fourth sides S1 to S4 based on the measurement results of the alignment marks ml to m6 of the first and fourth groups G1 and G4. Information related to the deformation of the outer edge area GA. Next, the control device 5 acquires information relating to the deformation of the internal region UA of the substrate P (step SA11). In the present embodiment, the control device 5 obtains a nonlinear component of the deformation in each of the plurality of exposure regions p a 1 to PA6 disposed in the inner region UA of the substrate p. In the present embodiment, as shown in Figs. 11 and 12, a plurality of representative positions D1 to D6 are defined in each of the plurality of exposure areas PA1 to PA6. In the embodiment, in the embodiment, the position D1 to D6 of the six representative areas PA1 (PA2, PA3, PA4, pA5, and PA6) are defined, but the position may be $ or less, or may be 7 More than one. As shown in the schematic diagram of Fig. 11, in the present embodiment, the control device 5 is linearly based on two quadratic equations Δ χ 1 (ργ) and Δ χ 2 (ργ) expressed by the equations (1) and (2). Insertion calculates a nonlinear component in each of the plurality of positions D1 to D6 in the x-axis direction. Further, as shown in the schematic diagram of FIG. 12, the control device 5 calculates the respective two positions D1 to D6 by linear interpolation based on the two quadratic formulas Δγ1 (ρχ) and (9) (10) expressed by the equation and the equation (4). Non-gamma axis direction

線性成分Q 八人&制裝置5根據在曝光區域pa丨〜pA6各個之變形之非，線性成分，求出用以在基板p之曝光時修正在曝光區域PA 1〜PA6各個之變形之非線性成分的對曝光區域 PA 1〜PA6各個之非線性修正值（非線性修正量）（步驟 SA12)。又，控制裝置5根據在曝光區域PA1〜pA6各個之基板 P之良形之非線性成分，求出用以在基板p之曝光時修正在曝光區域PA1〜PA6各個之線性成分的對曝光區域PA1〜 PA6各個之線性修正值（線性修正量）（步驟sAi3)。以下之説明中，將於步驟SA12求出之非線性修正值適當的稱為掃描非線性修正值、將於步驟SAn求出之線性修正值適當的稱為掃描線性修正值。求出板材線性修正值 '掃描非線性修正值及掃描線性 29 201245905 修正值後，控制裝置5即開始保持於基板保持部丨6之基板 P之曝光（步驟SA14)。控制裝置5根據求出之修正值調整曝光條件’使基板P曝光。控制裝置5調整曝光條件，以在已形成於基板P之圖案良好的重疊次一圖案之像。曝光條件之調整，包含例如對投影區域PR1〜PR7之基板P之移動條件、及投影光學系PL1〜PL7之圖案像之投影條件中之至少-方。基板P之移動條件，包含基板p之移動速度（掃描速度）、加速度及移動方向中之至少一種。圖案像之投影條件，包含投影區域PR1〜PR7之各個在χγ平面内之位置（變位、輪動（rotation))、大小少-種。圖索像之投影條件可藉由例如特開== 號公報、及特開2003 - 309053號公報等所揭示之包含變位調整機構、輪動調整機構及定比（sealing)調整機構等的調整機構加以調整。如上所述，本實施形態之曝光裝置Εχ，係一邊使光罩 Μ與基板Ρ往既^掃描方向同步移動、_邊將光μ之圖案之像投影至基板Ρ之曝光裝置（多透鏡型掃描曝光裝置）。基板Ρ之曝光時，控制裝置5控制光罩載台i及基板載台2’使光罩M及基板p移動於χγ — 向。本實施形態中，基板ρ之掃七％疋多描方軸方向先罩Μ之掃描方向(同步移動方向)亦控制裝置5使基板Ρ對投影系統筮. ° PR1〜PR7iH 之第1〜第7投影區域 PR1 PR7移動於X軸方向，並與該基板軸方向之移動同步，相對照明系統IS第乐1第7照明區域IR1〜IR7 30 201245905 :光罩Μ移動於χ軸方向’一邊藉由照明系統光孔照明光罩M’透過投影系統ps將來自光罩用光-照射於基板P。據此’以照射於第丨〜第7投= 學系PU〜PL7之第1〜第7投影區域PR1〜PR7之來自光罩Μ之曝光用光EL使基板p曝光，投影至基板Ρ» 如以上之說明，根據本實施形態，能在抑制對準標記之測量點數之同時’取得與基板p之變形相關之資訊：因此此在抑制生產置降低之同時，精確的取得與基板p之變形相關之資訊’抑制曝光不良之發生及不良元件之產生。又，本實施形態，雖係以在步驟SA6之後之處理中，基板p以第2變形圖案變形之情形為例作了説明，但在以第1變:形圖案變形之情形時’亦能實施與上述相同之處理，以取得與基板P之變形相關之資訊。 <第2實施形態> 接著，說明第2實施形態。以下之説明中，與上述實施形態相同或同等之構成部分係賦予相同符號，並簡化或省略其説明。上述第1實施形態，係以基板p之變形之非線性成分包含第2變形圖案（或第1變形圖案）之非線性成分的情形為例’針對步驟SA6之後之處理作了説明。第2實施形態，作為一例，係以基板P之變形之非線性成分包含第4變形圖案之非線性成分之情形為例加以説明。圖13係顯示第2實施形態之曝光方法之一例的流程 31 201245905 圖。又，圆13所示之步驟SA1〜S 〇夂處理，由於與上述第1實施形態中説明之處理相同，因此省略説明。圖14及圖15係、以示意方式顯示被保持於基板保持部 16、以第4變形圖案變形之基板ρ之變形之非線性成分之 -例的圖。圖U係顯示在基板ρ以第4變形圖案變形之情形時之第3邊S3及第4邊S4之變形之非線性成分之一例的示意圖，圖15則係顯示在基板ρ以第4變形圖案變形之情形時之第1邊S1及第2邊S2之非變形成分之一例的示意圖。在基板P以第4變形圖案變形之狀態下，設第3邊§3 及第4邊S4係描繪直線、能以i次式表示。在基板p以第 4變形圖案變形之狀態下，即使在抽出該基板p之變形之非線性成分之情形下，第3邊S3及第4邊S4亦描繪直線、能以1次式表示。圖14中，將在第3邊S3之於X軸方向之非線性成分，以下述1次式表示。 Δ xl(PY)= axPY+ b …（5) 圖14中’將在第4邊S4之於X軸方向之非線性成分，以下述1次式表示。 Δ x2(PY)= cxPY+ d …（6) 此處，Ρ Y係表示在基板ρ上之座標系（基板座標系）中下之Y軸方向成分。控制裝置5可根據以對準系統9測量對準標記ml〜m6 之結果，決定表示第3邊S3之1次式之式（5)之係數a、b 32 201245905 及表示第4邊S4之1次式之式（6)之係數^、d。控制裝置5可根據第i群組G1之對準標記ml〜m6之測罝結果，藉由就式（5)實施包含擬合處理之既定運算處理求出式（5)之係數a、b。此外，控制裝置5可根據第4 群:G4之對準標記ml〜m0之測量結果，藉由就式（6)實施包含擬合處理之既定運算處理，求出式⑹之係數e、d。藉由上述處理，於基板P之非線性成分中，決定表示第邊S3之1次式之式⑸、及表示第 § 式（6)(步驟 SB7)。據此，即根據對準標記ml〜m6之測量結果，取得了與第3邊S3及第4邊S4之非線性成分之變形相關之資訊。其-人’控制裝置5根據表示第3邊S3及第4邊以之 ί (第5)2及:式⑹與預先決定之既定關係式，決定表示第1邊“ 及第2邊S2之1次式。果預tit?定關係式可根據例如前置實驗或模擬結果預：加以決定，關於該關係式之資訊被 Γ:又，記憶裝…，預先儲存有對應第3its ^ 4邊S4之變形之滿査+棚as你a·· 透3及第 … 式。控制裝置5視根據對梓 §δ…〜。16之測量結果取得之第3邊S3及第"气:料形狀態，從複數個關係式㈣擇既定關係式：亦即，控制袭置5視第3itS3及第驟態，從複數個關係式中決定為取得與第丨S4之變形狀之變形相關之資訊所使用之關係式。及第2邊S2 本實施形態中，當判斷基板板H 4變形圖案變形 33 201245905 之時’亦即’判斷基板p之第3邊s3及第 =線之方式變形時，控制裝置5選…式作為=: 控制裝置5根據所取得之與第3邊S3及第4 變形相關之資訊與既定關係式之下述式⑺，取得與： si之變形相之資訊（步驟SB9)。、具體而言，控制裝置5根據使用對準系統9 果及運算處理（擬合處理等）取得之表示第3*83及== Μ之變形狀態之上述(5)、式(6)與下述式⑺，求出邊S1之2條直線(1次式)。此處，式⑺係表示 …軸方向之非線性成分的丨次式。 ^邊S1 Δ y(PX)= a x(c- a)/2x(L//2- | PX | )…⑺ 式⑺中’ L係於χ軸方向之基板p之尺寸從前置實驗或模擬等求出之㈣值（比例計數）。又’控制裝置5根據與取得之第3邊S3及第4邊S4 ^變形相之資訊與既定關係式之上述式⑺，取得與第2邊 2之變形相關之資訊（步驟SB 1 〇)。本實施形態中，盘笛！，总p , 弟1邊si之變形相關之資訊及與第 2邊S2之變形相關之資訊之各個，係以式⑺表示。又圖15中以不意方式顯示了以上述式⑺表示之第1 邊S1及第2邊S2。 ρ如則所述4艮據藉由取得與第3邊s3及第4邊以之 =形相關之資Λ而得之係數a、e與從前置實驗或模擬等求之係數α以1 _欠式表示第1邊S1及第2邊S2之情形 34 201245905 時，可求出該！次係數Ux(c—a)/2)。又係數可從基板P之外形、咬 M)中’〇次，、第1、第4群組G1、G4之對準以m6、ml之位置，無歧異的加以定出。承上所述，可根據第i、第4群組…以之對 nU〜m6之測量結果取得與第3邊§3及第 ^ 關之資訊，根據第i、第4群 ’形相 …量結果與既定關係式取得一之變形相關之資訊。亦即，本實 # 2邊S2 奉霄施形態中，控制裝置5 根據第1、第4群組G1、G4 、ST +知5己ηι 1〜ηιό之測量έ士果，取得與包含第i〜第4邊S1〜S4 j重、，·。 GA之變形相關之資訊。土反t外緣區域接著’控制裝置5，取锃彻且化于/、基板P之内部區域UA之變形相關之資訊（步驟SBU)。本.實施形態中，控制罗：罟ς技七山 k市!裝置5係未出配置在基板ρ之内部區域UA之複數輕_域⑷〜ρΑ6各個之變形之非線性成分。本貫施形態’如圖16及圖17所示，於複數個曝光區域ΡΑ1〜ΡΑ6之各個’分別設定有代表之複數個位置D1〜 D6。本實她形態中，就！個曝光區域pAi(pA2、pA3、pA4、 PA5、PA6)雖設定有6個代表之位置⑴〜加，但該位置可以是5個以下、亦可以是7個以上。如圖16之不意圖所示，本實施形態中，.控制裝置5係根據以式（5)及式（6)表示之2個1次式△ χ1(ΡΥ)、△ χ2(ργ)，藉由線性内插來算出在複數個位置D丨〜D6各個之於χ軸 35 201245905 方向的非線性成分β 又’如圖17之示意圖所示，控制裝£ 5根據以式⑺ 表示之1 -人式△ y(pX),藉由線性内插來算出在複數個位置 D 1〜D6各個之於γ軸方向之非線性成分。其次，控制裝置5根據在曝光區域pA1〜pA6各個之變形之非線性成分，求出用以在基& p之曝光時修正在曝光區域PA1〜PA6纟個之變形之非線性成分的對曝光區域 PA1 PA6各個之掃描非線性修正值（步驟SB丨2)。又控制裝置5根據在曝光區域pA丨〜pA6各個之基板 P之變形之非線性成分，求出用以修正在基板p之曝光時在曝光區域PA1〜PA6各個之線性成分的對曝光區域ρΑι〜 PA6各個之掃描線性修正值（步驟sB〖3)。在求出板片線性修正值、掃描非線性修正值及掃描線性修正值後’㈣裝置5即開始被保持在基板保持部16之基板P之曝光（步驟SB14)e控制裝置5根據所求出之修正值魏曝光條件，使基板p曝S。控制裝置5調整曝光條件’以在已形成於基板p之圖案良好的重疊次一圖案之像。如以上之説明，本實施形態亦能在抑制生產量降低之同時’精確的取得與練P之變形相關之資訊以抑制曝光不良之發生、產生不良元件。又，本實施形態中，雖係於步驟SA6之後之處理中，基板P以第4變形圖案變形之情形為例作了説明，但以第3 變形圖案變形時，亦能實施與上述相同之處理，以取得與基板P之變形相關之資訊》 36 201245905 又，上述實施形態，雖係根據取得與相對基板P之中心配置在一X側之第1Y部分GAyl之變形相關之資訊與配置在+ X側之第2Y部分GAy2之變形相關之資訊的結果與既定關係式，來取得與X部分GAx之變形相關之資訊，但亦可以根據取得與相對基板p之中心配置在+ Y側之第1X 部分GAxl之變形相關之資訊與配置在—γ側之第2χ部分 GAx2之變形相關之資訊的結果與既定關係式，來取得與γ 部分Gay之變形相關之資訊。又，上述實施形態，雖係取得與延伸於γ軸方向之Y 部分叫之變形相關之資訊’根據該取得之結果與既定關係式來..取得與延伸於X轴方向之乂部分GAx之變形相關之資訊’但亦可以是例如根據取得與延伸於丫軸方向之Y部分叫之變形相關之資訊的結果與既定關係式，來取得愈 :伸於與X軸及Y軸不同方向(例如相對γ軸傾斜… 向)之部分之變形相關之資訊。藉由既定關係式之調整，可根據與基板Ρ之外緣區域Ga t 甲之第1部分之變形相關之 2與既定關係式’來取得與第1部分不同之第2部分之變形相關之資訊。又，上述實施形態令，雖係設緣區域中相對基板卩之中心配Η_讀基板P之外 ^ 置在側（例如一X伽）夕邱八之變形相關之資訊與配置在 σ刀變形相關之,罝在另一側（例如+ Χ側）之部分之曼形相關之資吼’但亦可 Μ之μα 僅取侍與其1ί7 一方之變形相關之貝Λ。精由既定闕係式殳w γλ ^ 之凋整，即可根據與基板P之外緣區域GA申之第〗却八土 w < 刀之變形相關之資訊與既定關係 37 201245905 式’取得與第i部分不同之第2部分之變形相關之資訊。，又，上述實施形態中，基板Ρ之外形雖係長方形或正方形，但亦可以是菱形、或平行四邊形。此外，基板ρ之外形可以不是四角形，而可以是如半導體晶圓般之圓形、或橢圆形。又，上述實施形態中，與基板ρ之變形相關之資訊雖係藉由測量配置在基板p之對準標記ml〜m6來取得，但亦可以是例如使用能以光學方式測量基板p之端（外形）之測量裝置’來取得與基板ρ之變形相關之資訊。又’上述實施形態之基板ρ，不僅顯示元件用之玻璃基板亦可適用半導體元件製造用之半導體晶圓、薄膜磁頭用之陶瓷晶圓、或曝光裝置所使用之光罩或標線片之原版 (合成石英、矽晶圓）等。The linear component Q eight-person & device 5 determines the deformation of each of the exposure regions PA 1 to PA 6 for the exposure of the substrate p based on the deformation of the respective exposure regions pa 丨 p p6 to the linear component. The nonlinear correction value (non-linear correction amount) of each of the exposure regions PA 1 to PA6 of the linear component (step SA12). Moreover, the control device 5 obtains the exposure region PA1 for correcting the linear component of each of the exposure regions PA1 to PA6 at the time of exposure of the substrate p, based on the nonlinear component of the favorable shape of the substrate P in each of the exposure regions PA1 to pA6. ~ Linear correction value (linear correction amount) of PA6 (step sAi3). In the following description, the nonlinear correction value obtained in step SA12 is appropriately referred to as a scan nonlinear correction value, and the linear correction value obtained in step SAn is appropriately referred to as a scan linear correction value. When the plate linearity correction value 'scanning nonlinear correction value and scanning linearity 29 201245905 correction value is obtained, the control device 5 starts exposure of the substrate P held by the substrate holding portion 丨6 (step SA14). The control device 5 adjusts the exposure conditions based on the obtained correction value to expose the substrate P. The control device 5 adjusts the exposure conditions so as to superimpose the image of the next pattern on the pattern formed on the substrate P. The adjustment of the exposure conditions includes, for example, at least one of the movement conditions of the substrate P of the projection areas PR1 to PR7 and the projection conditions of the pattern images of the projection optical systems PL1 to PL7. The movement condition of the substrate P includes at least one of a moving speed (scanning speed) of the substrate p, an acceleration, and a moving direction. The projection conditions of the pattern image include the positions (displacement, rotation) and the small size of each of the projection regions PR1 to PR7 in the χγ plane. The projection conditions of the image of the figure can be adjusted by the displacement adjustment mechanism, the rotation adjustment mechanism, and the sealing adjustment mechanism disclosed in, for example, Japanese Laid-Open Patent Publication No. 2003-309053. The organization adjusted it. As described above, the exposure apparatus according to the present embodiment is an exposure apparatus (multi-lens type scanning) in which the mask Μ and the substrate are moved in synchronization with each other in the scanning direction, and the image of the pattern of the light μ is projected onto the substrate Ρ. Exposure device). When the substrate is exposed, the control device 5 controls the mask stage i and the substrate stage 2' to move the mask M and the substrate p to the χγ direction. In the present embodiment, the scan direction (synchronous movement direction) of the first cover Μ of the substrate ρ is further scanned, and the control device 5 causes the substrate Ρ to the projection system °. 1 to 7 of PR1 to PR7iH The projection area PR1 PR7 moves in the X-axis direction and is synchronized with the movement of the substrate axis direction, and the illumination system IS 1st illumination area IR1 to IR7 30 201245905: the mask Μ moves in the χ-axis direction while illumination The system aperture illumination mask M' illuminates the substrate P from the reticle through the projection system ps. According to this, the substrate p is exposed by the exposure light EL from the mask 照射 to the first to seventh projection areas PR1 to PR7 of the second to seventh projections of the second to seventh projections, and is projected onto the substrate 如» As described above, according to the present embodiment, it is possible to obtain information relating to the deformation of the substrate p while suppressing the number of measurement points of the alignment mark: therefore, the deformation of the substrate p can be accurately obtained while suppressing the reduction in production. Relevant information 'suppresses the occurrence of poor exposure and the generation of defective components. Further, in the present embodiment, the case where the substrate p is deformed by the second deformation pattern in the processing after the step SA6 has been described as an example. However, when the first pattern is deformed, the pattern can be implemented. The same processing as described above is performed to obtain information related to the deformation of the substrate P. <Second Embodiment> Next, a second embodiment will be described. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and the description thereof will be simplified or omitted. In the first embodiment, the nonlinear component of the deformation of the substrate p includes the nonlinear component of the second deformation pattern (or the first deformation pattern) as an example. The processing after the step SA6 will be described. In the second embodiment, as an example, a case where the nonlinear component of the deformation of the substrate P includes the nonlinear component of the fourth deformation pattern will be described as an example. Fig. 13 is a flow chart showing an example of an exposure method according to the second embodiment 31 201245905. Further, the processing of steps SA1 to S 所示 shown by the circle 13 is the same as the processing described in the first embodiment, and thus the description thereof is omitted. Figs. 14 and 15 are diagrams schematically showing an example of a nonlinear component of the deformation of the substrate ρ which is held by the substrate holding portion 16 and deformed by the fourth deformation pattern. Fig. U is a view showing an example of a nonlinear component of the deformation of the third side S3 and the fourth side S4 when the substrate ρ is deformed by the fourth deformation pattern, and Fig. 15 shows the fourth deformation pattern of the substrate ρ. A schematic diagram of an example of non-deformed components of the first side S1 and the second side S2 in the case of deformation. In a state in which the substrate P is deformed by the fourth deformation pattern, the third side §3 and the fourth side S4 are drawn as straight lines, and can be expressed in i-th order. In the state where the substrate p is deformed by the fourth deformation pattern, even when the nonlinear component of the deformation of the substrate p is extracted, the third side S3 and the fourth side S4 are drawn in a straight line and can be expressed in a linear expression. In Fig. 14, the nonlinear component in the X-axis direction of the third side S3 is expressed by the following linear expression. Δ xl (PY) = axPY + b (5) The nonlinear component in the X-axis direction of the fourth side S4 in Fig. 14 is expressed by the following linear expression. Δ x2 (PY) = cxPY + d (6) Here, Ρ Y indicates the Y-axis direction component in the coordinate system (substrate coordinate system) on the substrate ρ. The control device 5 determines the coefficients a, b 32 201245905 and the fourth side S4 representing the equation (5) of the third side S3 based on the result of measuring the alignment marks ml to m6 by the alignment system 9. The coefficient ^, d of the formula (6) of the second formula. The control device 5 can obtain the coefficients a and b of the equation (5) by performing the predetermined arithmetic processing including the fitting processing based on the result of the measurement of the alignment marks ml to m6 of the i-th group G1. Further, the control device 5 can obtain the coefficients e and d of the equation (6) by performing the predetermined arithmetic processing including the fitting processing based on the measurement result of the alignment marks ml to m0 of the fourth group: G4, by performing the predetermined arithmetic processing including the fitting processing in the equation (6). By the above-described processing, the equation (5) representing the first-order expression of the first side S3 and the equation (6) indicating the first-order equation S3 are determined in the nonlinear component of the substrate P (step SB7). Accordingly, based on the measurement results of the alignment marks ml to m6, information relating to the deformation of the nonlinear components of the third side S3 and the fourth side S4 is obtained. The human-control device 5 determines that the first side "and the second side S2 are 1" based on the predetermined relationship between the third side S3 and the fourth side ί (5) 2 and (6) and a predetermined relationship. The pre-tit relationship can be determined according to, for example, the pre-experiment or the simulation result: the information about the relationship is Γ: again, the memory is loaded, and the corresponding 3its 4 side S4 is stored in advance. The full deformation of the deformation + shed as you a · · through 3 and the ... .... Control device 5 according to the measurement results of 梓 δ δ ~ ~ 16 obtained the third side S3 and the "gas: material state, Selecting the relationship from a plurality of relations (4): that is, controlling the attack 5 view 3itS3 and the state, and determining from the plurality of relationships that the information related to the deformation of the shape of the second shape is used. In the present embodiment, when it is determined that the substrate plate H 4 is deformed by the deformation pattern 33 201245905, that is, when the third side s3 and the second line of the substrate p are determined to be deformed, the control device 5 is controlled. Selecting the formula as: = The control device 5 determines the relationship between the information related to the third side S3 and the fourth deformation and the established relationship. In the following formula (7), information on the deformation phase of the si is obtained (step SB9). Specifically, the control device 5 obtains the third*83 based on the use of the alignment system 9 and the arithmetic processing (fitting processing, etc.). And the above-mentioned (5), (6) and (7) of the deformation state of Μ, the two straight lines of the side S1 are obtained (the first-order formula). Here, the equation (7) represents the nonlinearity in the axial direction of the ... The order of the composition. ^Edge S1 Δ y(PX)= ax(c- a)/2x(L//2- | PX | ) (7) In the equation (7), the size of the substrate L of the L-axis in the x-axis direction The (fourth) value (proportional count) obtained from the pre-experimental experiment or the simulation, etc. The control device 5 obtains the information based on the acquired third side S3 and the fourth side S4 and the predetermined relation (7). Information relating to the deformation of the second side 2 (step SB 1 〇). In the present embodiment, the information related to the deformation of the flute, the total p, the si of the sibling, and the information related to the deformation of the second side S2 Each of them is represented by the formula (7). Further, in Fig. 15, the first side S1 and the second side S2 represented by the above formula (7) are displayed in an unintentional manner. If ρ, then the fourth side is obtained by the third side s3 and The fourth side is = The coefficient a, e obtained from the related assets, and the coefficient α obtained from the pre-experiment or simulation, etc., in the case where the first side S1 and the second side S2 are represented by the 1_-down formula 34 201245905, can be obtained. The coefficient Ux(c-a)/2). The coefficient can be from the outer shape of the substrate P, biting M), and the alignment of the first and fourth groups G1 and G4 is at the position of m6 and ml. According to the above, the information of nU~m6 can be obtained according to the measurement results of nU~m6, and the information of §3 and §3 of the third side can be obtained according to the i, 4th The group's shape and volume results are related to the established relationship. That is, in the form of the real #2 side S2, the control device 5 obtains and includes the i-th based on the first and fourth groups G1, G4, and ST + knowing 5 ηι 1 to ηιό ~ 4th side S1 ~ S4 j heavy, , ·. Information about the deformation of GA. The soil reverses the outer edge region and then the control device 5 takes the information relating to the deformation of the inner region UA of the substrate P (step SBU). In the embodiment, the control unit 5 is a non-linear component of the deformation of each of the plurality of light_fields (4) to ρΑ6 disposed in the inner region UA of the substrate ρ. As shown in Figs. 16 and 17, the present embodiment is provided with a plurality of representative positions D1 to D6 in each of the plurality of exposure areas ΡΑ1 to ΡΑ6. In this form, she is! The exposure areas pAi (pA2, pA3, pA4, PA5, and PA6) are set to have six representative positions (1) to plus, but the positions may be five or less, or seven or more. As shown in Fig. 16, in the present embodiment, the control device 5 borrows two first-order expressions Δχ1(ΡΥ) and Δχ2(ργ) expressed by the equations (5) and (6). The nonlinear component β in the direction of the χ axis 35 201245905 at each of the plurality of positions D 丨 D D6 is calculated by linear interpolation. As shown in the schematic diagram of FIG. 17 , the control device is based on the 1-person represented by the equation (7). The Δ y(pX) is calculated by linear interpolation to calculate a nonlinear component in each of the plurality of positions D 1 to D6 in the γ-axis direction. Next, the control device 5 determines the exposure for correcting the nonlinear component of the deformation in the exposure regions PA1 to PA6 at the time of exposure of the base & p based on the nonlinear component of the deformation in each of the exposure regions pA1 to pA6. Scanning nonlinear correction values for each of the areas PA1 to PA6 (step SB丨2). Further, the control device 5 obtains the exposure region ρΑι~ for correcting the linear component of each of the exposure regions PA1 to PA6 at the time of exposure of the substrate p, based on the nonlinear component of the deformation of the substrate P in each of the exposure regions pA? to pA6. The scan linear correction value of each PA6 (step sB〖3). After the plate linearity correction value, the scanning nonlinearity correction value, and the scanning linearity correction value are obtained, the (4) device 5 starts exposure of the substrate P held by the substrate holding portion 16 (step SB14) e, and the control device 5 obtains the result. The correction value of the Wei exposure condition causes the substrate p to be exposed to S. The control device 5 adjusts the exposure condition ' to superimpose the image of the next pattern on the pattern formed on the substrate p. As described above, in the present embodiment, it is possible to accurately obtain information relating to the deformation of the P while suppressing the decrease in the throughput to suppress the occurrence of defective exposure and to cause defective components. Further, in the present embodiment, the case where the substrate P is deformed by the fourth deformation pattern is described as an example in the process after the step SA6. However, when the third deformation pattern is deformed, the same processing as described above can be performed. In order to obtain the information relating to the deformation of the substrate P, the above-described embodiment is based on obtaining information relating to the deformation of the first Y-part GAyl disposed on the X side of the center of the counter substrate P, and is arranged at +X. The result of the information related to the deformation of the 2Yth portion GAy2 on the side is related to the predetermined relation to obtain the information related to the deformation of the X portion GAx, but may also be arranged in the 1X portion on the +Y side according to the center of the opposite substrate p. The information related to the deformation of GAxl is related to the result of the information related to the deformation of the second part GAx2 of the -γ side, and the relationship between the information and the deformation of the gamma part Gay is obtained. Further, in the above-described embodiment, the information relating to the deformation of the Y portion extending in the γ-axis direction is obtained. According to the result of the acquisition and the predetermined relationship, the deformation of the GA portion GAx extending in the X-axis direction is obtained. Relevant information 'but may also be, for example, based on the result of obtaining information related to the deformation of the Y portion extending in the direction of the x-axis, and the established relationship: to achieve a different direction from the X-axis and the Y-axis (for example, relative The information related to the deformation of the γ-axis tilt...to). By the adjustment of the predetermined relationship, the information related to the deformation of the second part different from the first part can be obtained according to the 2 related to the deformation of the first part of the outer edge region Ga t A of the substrate 与 and the predetermined relation ' . Further, in the above embodiment, the information relating to the deformation of the center of the substrate 卩 _ reading the substrate P and the side (for example, an X gamma) is set in the edge region. Relatedly, the 曼-related 吼部分部分部分部分另一另一另一另一另一另一另一另一另一另一另一另一另一另一吼吼吼吼吼吼吼吼吼吼吼吼吼吼吼 μ μ μ μ μ μ μ μ The fineness of the established 阙w γλ ^ can be based on the information related to the deformation of the knives of the outer edge of the substrate P, but the relationship between the knives and the deformation of the knives 37 201245905 Information relating to the deformation of Part 2 of the i-th part. Further, in the above embodiment, the shape of the substrate 系 is rectangular or square, but may be a rhombus or a parallelogram. Further, the shape of the substrate ρ may not be a quadrangle, but may be a circular shape or an elliptical shape like a semiconductor wafer. Further, in the above-described embodiment, the information relating to the deformation of the substrate ρ is obtained by measuring the alignment marks ml to m6 arranged on the substrate p, but it is also possible to optically measure the end of the substrate p, for example. The measuring device of the shape) is used to obtain information relating to the deformation of the substrate ρ. Further, the substrate ρ of the above-described embodiment can be applied not only to the semiconductor substrate for the display element but also to the semiconductor wafer for semiconductor element fabrication, the ceramic wafer for the thin film magnetic head, or the original mask or the reticle used for the exposure apparatus. (synthetic quartz, germanium wafer), etc.

又’作為曝光裝置EX，除了能適用使光罩Μ與基板P 同步移動以透過光罩Μ之圖案之曝光用光EL對基板ρ進行掃描曝光之步進掃描（step & scan)方式之掃描型曝光裝置 (知描步進機）以外，亦能適用在使光罩M與基板ρ靜止之狀釔下，使光罩厘之圖案一次曝光，並使基板P依序步進移動的之步進重複（steP & repeat)方式的投影曝光裝置（步進機）。又’本發明亦可適用於如美國專利第634 1007號說明書、美國專利第62〇8407號說明書、美國專利第6262796 號說明t #所揭示《具備複數個基板載台之冑冑台型之曝光裝置》 38 201245905 又，本發明亦能適用於美國專利帛_963 歐洲專利中請公開帛1713113號說明書等所揭示之持基板之基板載台'與不保持基板而搭載形成有基準柯記之基準構件及/或各種光電感測器之測量載台的曝：裝置。此外，亦可採用具備複數個基板載台與測量載台之曝光裝置。曝光裝ϊ EX之種類’並不限於液晶顯示元件製造用或顯示器製造用之曝光裝i ’亦能廣泛適用於將半導體元件圖案曝光至基P <半導體元件製造用之曝光震置，以及用以製造薄膜磁頭、攝影WHCCD)、微機器、MEMs、DNA 晶片、或用以製造標線片或光罩等之曝光裝置等。又，上述各實施形態中，雖係使用含雷射干涉儀之干涉儀系統來測量各載台之位置資訊，但不限於此，但亦可使用例如檢測設於各載台之之標尺（繞射光柵）之編碼器系統。又’上述實施# •禮中，虽隹係使用在光透射性基板上形成有既定遮光圖案（或相位圖案、減光圖案）之光透射型光罩仁亦可取代此光罩，使用例如美國專利第6778257號公報所揭不，根據待曝光圖案之電子資料來形成透射圖案或反射圖案、或形成發光圖案之可變成形光罩（電子光罩、主動光罩或影像產生器）。Λ，亦可取代具有非I光型影像顯示元件之可變成形光罩，而裝備包含自發光型影像顯示元件之圖案形成裝置。上述實施形態之曝光裝置Εχ，係將包含本申請案申請 39 201245905 專利範圍所記載之各構成要素的各種次系統，以能保持既定之機械精度、電氣精度、光學精度之方式加以製造。為確保此等各種精度，於組裝前後，進行對各種光學系統進订用以達成光學精度之調整、對各種機械系統進行用以達成機械精度之調整、對各種電氣系統進行用以達成電氣精度之調整。阴從各種次系統至曝光裝置之組裝製程，係包含機械連接、電路之配線連接、氣麼迴路之配管連接等。當然，從各種次系統至曝光裝置之組裝製程前，係有各次系統個別之組裝製程。當各種次系統至曝光裝置之組裝製程結束後，即進行綜合調整，以確保曝光裝置Εχ整體之各種精度》此外，曝光裝置之製造最好是在溫度及清潔度等到管理之無塵室進行。半導體元件等之微元件，如圖18所示，係經進行微元件之功能、性能設計之步驟2(Η，根據此設計步驟製作光罩 (標線片）之步驟202,製造元件基材之基板之步驟2〇3，包含依據上述實施形態進行基板處理（曝域理，包含使用光罩圖案以曝光用光使基板曝光之動作、以及使曝光後基板 (感光材）顯影之動作）的基板處理步驟，元件組裝步驟 (包含切割步驟、結合步驟、封裳步驟等之加卫製程郎，以及檢査步驟206等而製造。又，於步驟204,包含藉由使感光材顯影’以形成對應光罩圖案之曝光圖案層(顯影後之感光材之層），透過此曝光圖案層加工基板之動作。又，上述各實施形態及變形例之要件可適當加以組 40 201245905 合。又，亦有不使用部分構成要件之情形。此外，在法令許可範圍内，援用上述實施形態及變形例所引用之關於曝光裝置等之所有公開公報及美國專利之揭示作為本文記載之一部分。【圖式簡單說明】圖1係顯示第1實施形態之曝光裝置之一例的概略構成圖。圖2係顯示第1實施形態之曝光裝置之一例的立體圖。圖3係顯示第1實施形態之投影系統之投影區域與對準系統之檢測區域與基板之關係之一例的示意圖。圖4Α係顯示第丨實施形態之基板之變形狀態之一例的不意圖。圖4Β係顯示第1實施形態之基板之變形狀態之一例的不意圖0 圖5Α係顯示第1實施形態之基板之變形狀態之一例的不意圖。圖5Β係顯示第1實施形態之基板之變形狀態之一例的不意圖。Further, as the exposure apparatus EX, in addition to the scanning and exposure scanning of the substrate ρ, the exposure light EL which moves the mask Μ and the substrate P in synchronization with the pattern of the mask Μ can be applied. In addition to the type of exposure apparatus (the tracing stepper), it is also applicable to the step of causing the mask M to be exposed once in a state where the mask M and the substrate ρ are stationary, and the substrate P is sequentially stepped and moved. Progressive (steP & repeat) projection exposure device (stepper). In addition, the present invention can also be applied to the exposure of a plurality of substrate stages, such as the specification of US Pat. No. 634 1007, the specification of US Pat. No. 62-8407, and the description of US Patent No. 6262796. The present invention is also applicable to the substrate carrier of the substrate disclosed in the specification of Japanese Patent Laid-Open No. Hei. Exposure of the measuring station of the component and/or various photoconductors: device. In addition, an exposure device having a plurality of substrate stages and a measurement stage can also be used. The type of exposure mounting EX is not limited to the manufacturing of liquid crystal display elements or the exposure apparatus for display manufacturing, and can be widely applied to exposure of semiconductor element patterns to the base P < exposure for semiconductor element manufacturing, and To manufacture thin film magnetic heads, photographic WHCCDs, micromachines, MEMs, DNA wafers, or exposure devices for making reticle or reticle, and the like. Further, in each of the above embodiments, the position information of each stage is measured using an interferometer system including a laser interferometer, but the present invention is not limited thereto, but for example, a scale (measured on each stage) may be detected. Encoder system for gratings). Further, in the above-mentioned implementation, it is also possible to use a light-transmitting reticle having a predetermined light-shielding pattern (or a phase pattern or a dimming pattern) formed on a light-transmitting substrate instead of the reticle, for example, the United States. Patent No. 6,778,257 discloses a variable shaping mask (electronic mask, active mask or image generator) for forming a transmission pattern or a reflection pattern or a light pattern according to an electronic material of a pattern to be exposed. Alternatively, instead of a variable shaping mask having a non-I-light type image display element, a pattern forming apparatus including a self-luminous type image display element may be provided. The exposure apparatus according to the above-described embodiment is manufactured in such a manner that various sub-systems including the respective constituent elements described in the patent application No. 39 201245905 can maintain predetermined mechanical precision, electrical precision, and optical precision. In order to ensure these various precisions, various optical systems are ordered before and after assembly to achieve optical precision adjustment, various mechanical systems are used to achieve mechanical precision adjustment, and various electrical systems are used to achieve electrical precision. Adjustment. The assembly process from the various subsystems to the exposure device includes mechanical connection, wiring connection of the circuit, and piping connection of the gas circuit. Of course, prior to the assembly process of the various subsystems to the exposure apparatus, there are individual assembly processes for each system. After the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various precisions of the exposure apparatus. In addition, the exposure apparatus is preferably manufactured in a clean room in which temperature and cleanliness are managed. As shown in FIG. 18, the micro component of the semiconductor element or the like is subjected to the step 2 of performing the function and performance design of the micro device (ie, the step 202 of fabricating the photomask (reticle) according to the design step, and manufacturing the component substrate. The step 2〇3 of the substrate includes a substrate which is subjected to substrate processing (exposure, including an operation of exposing the substrate by exposure light using a mask pattern, and an operation of developing the substrate after exposure (photosensitive material) using the mask pattern). a processing step, a component assembly step (including a cutting step, a bonding step, a sealing step, and the like), and an inspection step 206, etc. Further, in step 204, the photoreceptor is developed to form a corresponding light. The exposure pattern layer of the cover pattern (the layer of the photosensitive material after development) is processed by the substrate through the exposure pattern layer. Further, the requirements of the above embodiments and modifications can be appropriately grouped as 40 201245905. In the case where a part of the constituent elements are used, all the public disclosures of the exposure apparatus and the like cited in the above embodiments and modifications are used within the scope of the law. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing an example of an exposure apparatus according to a first embodiment of the present invention. FIG. 2 is a view showing an example of an exposure apparatus according to the first embodiment. Fig. 3 is a schematic view showing an example of the relationship between the projection area of the projection system of the first embodiment and the detection area of the alignment system and the substrate. Fig. 4 is a schematic view showing an example of a deformation state of the substrate of the second embodiment. Fig. 4 is a schematic view showing an example of a deformed state of the substrate of the first embodiment. Fig. 5 is a view showing an example of a deformed state of the substrate of the first embodiment. Fig. 5 shows a substrate of the first embodiment. An example of a state of deformation is not intended.

圖6Α係顯示第1實施形態之基板之變形狀態之一例的示意圖Q 圖6B係顯示第1實施形態之基板之變形狀態之一例的不意圖。圖7A係顯示第1實施形態之基板之變形狀態之一例的 41 201245905 示意圖。圖7Β係顯示第1實施形態之基板之變形狀態之一例的示意圖。圖8係顯示第1實施形態之曝光方法之一例的流程圖。圖9你顚示第1實施形態之基板之第3、第4邊之變形 m w的示意圖° 圖丨〇係顯示第1實施形態之基板之第1、第2邊之變形狀態之，例的示意圖° 圖丨丨係顯示第1實施形態之基板之内部區域之變形狀態之-例的禾意圖。圖12係顯示第1實施形態之基板之内部區域之變形狀態之-例&乔意圖。圖丨3係顯示第2實施形態之曝光方法之一例的流程圖。圖14係顯示第2實施形態之基板之第3、第4邊之變形狀態之一例的示意圖。圖！ 5係顯示第2實施形態之基板之第1、第2邊之變形狀態之/例的示意圖。圖16係顯示第2實施形態之基板之内部區域之變形狀態之例丨的示意圖。圖 17 係顯示第2實施形態之基板之内部區域之變形狀態之例的示意圖。圖 1S 璽係顯示本實施形態之元件製造方法之一例的流程圖 0 42 201245905 【主要元件符號說明】 1 光罩載台 1R、 2R 測量鏡 2 基板載台 3 光罩載台驅動系統 4 基板載台驅動系統 5 控制裝置 5R 記憶裝置 6 干涉儀系統 6A、 6B 雷射干涉儀單元 7 ' 8 第1、第2檢測系統 9 對準系統 9 A〜 9F 顯微鏡 10 基座板 10G 導引面 11 > 12 第1、第2柱 12G 導引面 13 機體 14 平台 15 光罩保持部 16 基板保持部 AL1 〜AL6 檢測區域 D1〜 D6 位置 EL 曝光用光 43 201245905 EX 曝光裝置 FL 支承面 G1 〜G4 第1〜4群組 GA 外緣區域 GAx 外緣區域之X部分 GAxl 第IX部分 GAx2 第2X部分 GAy 外緣區域之Y部分 GAy 1 第1Y部分 GAy2 第2Y部分 IL1 〜IL7 照明模組 IR1 〜IR7 照明區域 IS 照明系統 M 光罩 m 1 〜m6 對準標記 P 基板 PA1 〜PA6 曝光區域 PL1〜PL7 投影光學系 PR1 〜PR7 投影區域 PS 投影系統 SI 〜S4 基板之第1〜第4邊 UA 内部區域 44Fig. 6 is a schematic view showing an example of a deformed state of the substrate of the first embodiment. Fig. 6B is a view showing an example of a deformed state of the substrate of the first embodiment. Fig. 7A is a schematic view showing an example of a state of deformation of the substrate of the first embodiment, 41 201245905. Fig. 7 is a schematic view showing an example of a deformed state of the substrate of the first embodiment. Fig. 8 is a flow chart showing an example of the exposure method of the first embodiment. Fig. 9 is a schematic view showing a deformation mw of the third and fourth sides of the substrate of the first embodiment. Fig. 9 is a schematic view showing a state in which the first and second sides of the substrate of the first embodiment are deformed. The figure 显示 shows the example of the deformation state of the inner region of the substrate of the first embodiment. Fig. 12 is a view showing an example of the deformed shape of the inner region of the substrate of the first embodiment. Fig. 3 is a flow chart showing an example of the exposure method of the second embodiment. Fig. 14 is a schematic view showing an example of a deformed state of the third and fourth sides of the substrate of the second embodiment. Figure! Fig. 5 is a schematic view showing an example of a deformed state of the first and second sides of the substrate of the second embodiment. Fig. 16 is a view showing an example of a deformed state of the inner region of the substrate of the second embodiment. Fig. 17 is a schematic view showing an example of a deformed shape of the inner region of the substrate of the second embodiment. Fig. 1 is a flow chart showing an example of a method for manufacturing a component of the present embodiment. 0 42 201245905 [Explanation of main component symbols] 1 photomask stage 1R, 2R measuring mirror 2 substrate stage 3 photomask stage driving system 4 substrate carrying Stage drive system 5 Control unit 5R Memory unit 6 Interferometer system 6A, 6B Laser interferometer unit 7' 8 First and second detection systems 9 Alignment system 9 A to 9F Microscope 10 Base plate 10G Guide surface 11 &gt 12 First and second columns 12G Guide surface 13 Body 14 Platform 15 Mask holding unit 16 Substrate holding unit AL1 to AL6 Detection area D1 to D6 Position EL Exposure light 43 201245905 EX Exposure unit FL Support surface G1 to G4 1 to 4 groups GA outer edge region GAx outer edge region X portion GAxl IX portion GAx2 2X portion GAy outer edge region Y portion GAy 1 1Y portion GAy2 2Y portion IL1 to IL7 illumination module IR1 to IR7 illumination Area IS illumination system M mask m 1 ~ m6 alignment mark P substrate PA1 ~ PA6 exposure area PL1 ~ PL7 projection optical system PR1 ~ PR7 projection area PS Projection System SI to S4 Substrate 1st to 4th UA Internal Area 44

Claims

201245905 七、申a青專利範圍： 1· 一種曝光方法，係以曝光用光使基板曝光，其包含：取得與含該基板端部之外緣區域之第丨部分之變形關的資訊；根據該取得之結果與既定關係式，取得與該第1部分不同之該外緣區域之第2部分之變形相關的資訊；以及根據所取得之與該第1部分及該第2部分之變形相關的資訊’使該基板曝光。 2 .如申請專利範圍第1項之曝光方法，其中，該第1 部分係分別配置在相對該基板中心之一方及另一方。 3 ·如申請專利範圍第丨或2項之曝光方法，其中，該第1部分延伸於第1方向，該第2部分延伸於與該第i方向交叉之第2方向。 4·如申請專利範圍第丨至3項中任一項之曝光方法，其中’ s亥基板之外形為四角形；該第1部分包含延伸於該第i方向之該基板之2個邊；該第2部分包含延伸於該第2方向之該基板之2個邊。 5·如申請專利範圍第丨至4項中任一項之曝光方法，其中，該基板具有配置在該第丨部分之複數個對準標記丨與该第1部分之變形相關之資訊之取得，包含對準標記。 ^ 6·如申請專利範圍第5項之曝光方法，其中，該對準標記係對應該基板外緣區域之變形而位移。 7·如申請專利範圍第…項中任一項之曝光方法， 45 201245905 其中’預先準備對應該第！部分之變形之複數個該關係式；視.亥第1部分之變形狀態，從複數個該關係式選擇既定關係式。 8 ·如申請專利範圍第7項之曝光方法，其中，複數個該關係式之次數不同。 9·如申請專利範圍第…項中任一項之曝光方法，其包含在取得與該外緣區域之變形相關之資訊後，取得與該外緣區域内側之該基板内部區域之變形相關的資訊。 10·如申請專利範圍帛9項之曝光方法，其包含根據與》亥外緣區域之變形相關之資訊、及與該内部區域之變形相關之資訊中之至少一方，調整曝光條件。 11 · 一種元件製造方法，包含：使用申請專利範圍第U10項中任一項之曝光方法使基板曝光之動作；以及使曝光後之基板顯影之動作。 12 · —種曝光裝置，係以曝光用光使基板曝光：其具備第1取得裝置，用以取得與含該基板端部之外緣區域之第1部分之變形相關之資訊；以及第2取彳于裝置，係根據以該第i取得裝置取得之結果與既定關係式，取得與該第i部分不同之與該外緣區域之第2部分之變形相關之資訊；根據所取得之與該第i部分及該第2部分之變形相關之資訊，使該基板曝光。 46 201245905 13 · —種元件製造方法，包含：使用申請專利範圍第1 2項之曝光裝置使基板曝光之動作；以及使曝光後之基板顯影之動作。八、圖式： (如次頁） 47201245905 VII. Shen Aqing Patent Range: 1. An exposure method for exposing a substrate by exposure light, comprising: obtaining information related to deformation of a third portion including an outer edge region of the end portion of the substrate; Acquiring the obtained result and obtaining the information related to the deformation of the second portion of the outer edge region different from the first portion; and obtaining information related to the deformation of the first portion and the second portion 'Exposure the substrate. 2. The exposure method of claim 1, wherein the first part is disposed on one of the centers of the substrate and the other. 3. The exposure method of claim 2 or 2, wherein the first portion extends in the first direction, and the second portion extends in the second direction intersecting the i-th direction. 4. The exposure method according to any one of claims 1-3, wherein the outer surface of the substrate is a quadrangle; the first portion includes two sides of the substrate extending in the ith direction; The two portions include two sides of the substrate extending in the second direction. 5. The exposure method according to any one of claims 4 to 4, wherein the substrate has a plurality of alignment marks arranged in the third portion and the information relating to the deformation of the first portion is obtained, Contains alignment marks. The exposure method of claim 5, wherein the alignment mark is displaced in response to deformation of the outer edge region of the substrate. 7. If the exposure method of any of the patent scopes is..., 45 201245905 where 'pre-preparation corresponds to the first! A plurality of the relationship of the partial deformation; Depending on the deformation state of the first part of the hai, the predetermined relationship is selected from a plurality of the relations. 8 • The exposure method of claim 7 of the patent application, wherein the number of the plurality of relations is different. The exposure method according to any one of the preceding claims, comprising: obtaining information related to deformation of an inner region of the substrate inside the outer edge region after obtaining information related to deformation of the outer edge region . 10. The exposure method of claim 9 wherein the exposure condition is adjusted based on at least one of information relating to deformation of the outer edge region and information relating to deformation of the inner region. 11. A method of manufacturing a component, comprising: an operation of exposing a substrate using an exposure method according to any one of claims U10; and an operation of developing the substrate after exposure. An exposure apparatus for exposing a substrate by exposure light: comprising: a first obtaining means for acquiring information relating to deformation of a first portion including an outer edge region of the end portion of the substrate; and a second taking In the device, based on the result obtained by the ith acquisition device and the predetermined relationship, information related to the deformation of the second portion of the outer edge region different from the i-th portion is obtained; Information relating to the deformation of the i portion and the second portion exposes the substrate. 46 201245905 13 - A method for manufacturing a component, comprising: an operation of exposing a substrate using an exposure apparatus of claim 12; and an operation of developing the substrate after exposure. Eight, the pattern: (such as the next page) 47