201243356 六、發明說明： 【發明所屬之技術領域】 尤其指的是—種結合 導體元件之霍爾效應 本發明係關於一種量測裝置 導光量測功能以協助量測光電半 量測裝置。 【先前技術】 半導體工業近年來-直處於快速發展的狀態，急劇 擴張的現象從未衰ϋ，目t也為我國重點發展的產業之 一，半世紀以來半導體發展對人類生活方式的影響是全 面1·生的，半導體相關產品在生活的周遭隨處可見。 任-種半導體元件的運作效能是由各項物理特性 所決定，如能帶結構'結晶性、表面形貌、電阻率、載 子的極性、濃度與移動率...料。前述的各種特性參數 可以經過許多測量方式來對樣本作定性與定量的分析 。然而-般量測設備都相當昂貴，以致於量測設備的投 資對铸體相關業者來說是相當大的負擔。 接著清參閱圖1’為本申請人先前所申請中華民國 第M309672專利案中所揭露之利用—組永久性強力磁 鐵來設計霍爾效應量測槽的示意圖，經由霍爾效應 的則量即可彳于到傳導載子的極性與濃度 ，以相同的設備 :可測侍電阻率，有了電阻率就可以配合霍爾效應的測 置結果得到载子移動率。 201243356 然而光電半導體業亦已漸趨成熟且穩定快速的發 展，依據前述霍爾效應量測槽係無法提供完整的量測， 如果在例如是紫外線的特定光源照射下量測傳導載子 的濃度、電阻率與遷移率等基本電性的變化，因此為了 達到更全方位的量測功能，故有再加以改良開發之必要 【發明内容】 有鑑於上述課題，本發明之目的為提供一種增設光 源照射量測功能的霍爾效應量裝置。 緣是，為達上述目的，本發明之具導光量測功能之 霍爾效應里測裝置，係由一測試槽、一組磁鐵單元、一 通道及I樣品單元所組成，其巾測試槽具有—槽孔，該 組磁鐵皁凡係互相平行設置於測試槽兩外侧以提供一 均勻化磁場’而通道由霍爾效應量測裝置周緣適處穿透 ，鐵單元其中之一並連通至槽孔，藉以提供一光源由外 :照射至槽孔内，而樣品單元具有複數個電極及一樣品 =、，=垂直放置制試槽之魏内，其中樣品座供承放 待測物以接收光源照射，並藉由電性連接至該些電極之 例如伏特計或安培計等量測工具以量測相闕數據。 依據本發明具導光量測功能之霍爾效應量測裝置 ^組成，其透過㈣定錢照射於待_品上，即可讓 判：者Γ解在特定光源照射下半導體元件例如ν、ρ型 载子漠度、載子遷移率或電阻率等數據内容，達 201243356 成研九者瞭解樣品對特定光源的電學反應。 【實施方式】 ‘ 以下將參照相關圖式’說明依據本發明較佳實施例 之一種具導光量測功能之霍爾效應量測裝置。 請參閱圖2及圖3所示’為本發明具導光量測功能 之霍爾效應量測裝置之結構示意圖。如圖所示，本發明 具導光量測功能之霍爾效應量測裴置1〇〇係包括有一 測試槽10、-組磁鐵單元20、一通道3〇及一樣品單元 40，測試槽1〇具有一槽孔u，而該組磁鐵單元係 互相平行設置於測試槽10兩外側以提供一均句化磁場 ，而通道30係由霍爾效應量測裝置1〇〇周緣適處穿透 磁鐵單元20其中之一並連通至槽孔u，以供一光源由 外部照射至槽孔11内，而樣品單元4〇係具有複數個電 極41(如圖4)及一樣品座42,其垂直放置於測試槽1〇 之槽孔11内部，作為霍爾效應量測裝置1〇〇之樣品治 具。 在本實施例當中，霍爾效應量測裝置100的外型係 實施為圓柱形（如圖2所示），但此實施僅為方便構築之 結構，實際上係可設計為任意的形狀。 再者，本實施例中磁鐵單元20係為兩個永久性磁 鐵，分別設置在測試槽1〇的兩側，而能使得樣品單元 40被放置在磁鐵的正中心位置，為了使用上的方便， 在此設定均勻磁場大小约為i cm2〜1〇〇 cm2,磁場強度 5 201243356 在1 〇 mT以上。 日、另外，此實施例中由通道3G進人的光線6i，可以 疋透過光纖導入，或者是直接使用LED (發光二極體） 光源60,此外例如振幅調變光等可調變光源亦可引入 如此來，即可測得特定光波對樣品單元4〇所安置 的例如是半導體之待測物5()之各項電性參數的時變關 係’而讓研究單位能有更多的數據加以分析。 、請再同時參閱圖3及圖4，其中待測物50係具有 複數個電極以電性連接至樣品單元4()之複數個電極Μ 从且樣品單元4〇之複數個電極41係電性連接至複數個 部電極接點（未圖示），而該些外部電極接點即可電 性連接電流源、電壓源、伏特計及安培計。 以下係以實例說明之’在圖4當中，樣品單元4〇 糸設計用以供具有四個歐姆接觸電極的待測物承放 :因此對應設計有四個電極川、m，且 對應設計有四個外部電極（未圖示），待測物別連接至 樣品單元40上後，即可將樣品單元放置於槽孔U中， 而藉由將伏特計之接腳接上該些外部電極，即可取得對 電壓值，並與其他例如各電極相對距離及傳導層厚 -數據代入公式計算後’即可得到電阻率、霍爾常數 、载子濃歧移動料參數，且由於本發明料設計有 =%以供光源進人測試，因此更能取得在不同光源 下該些數據的變化。 6 201243356 综上所述’本發明具導光量測功能之霍爾效應量測 装置係於霍爾效應量測裝置中加入可導入光源之通道 除了原先藉由永久性強力磁鐵所提供強磁場以節省體 積重量及成本外’更允許了光源的穿透，以將特定光線 …、射於待娜樣品上，透過此結構的設計，使用者即可瞭 解在特定光源照射下半導體元件例如N、p型判別、載 目 =度:載子！移率或電阻率等數據内容，達成研究者 奢解樣對特疋光源的電學反應。 以上所述僅為舉例性，而非為限制性 、 離本發明之精神與範鳴，而對其進行之。何未脫 ’均應包含於後附之申請專利範圍中。改或變更 201243356 【圖式簡單說明】 圖1為習知霍爾量測裝置之結構示意圖； 圖2為本發明具導光量測功能之霍爾效應量測裝置裝 入樣品單元之上視圖； 圖3為圖2沿A-A剖面線之移轉剖視圖；以及 圖4為圖2沿B-B剖面線之移轉剖視圖。 【主要元件符號說明】 100霍爾效應量測裝置 10 測試槽 11 槽孔 20 磁鐵單元 30 通道 40 樣品單元 41 電極 411 電極 412 電極 413 電極 414 電極 42 樣品座 50 待測物 60 光源 61 光線 200 霍爾效應量測槽201243356 VI. Description of the Invention: [Technical Field of the Invention] In particular, it relates to a Hall effect of a combined conductor element. The present invention relates to a measuring device light guiding measurement function to assist in measuring a photoelectric half measuring device. [Prior Art] In recent years, the semiconductor industry has been in a state of rapid development. The phenomenon of rapid expansion has never declined. It is also one of the key industries in China. The impact of semiconductor development on human lifestyle has been comprehensive for half a century. 1. Raw, semiconductor-related products can be seen everywhere in life. The operational performance of any of the semiconductor components is determined by various physical properties, such as the band structure 'crystallinity, surface topography, resistivity, carrier polarity, concentration, and mobility. The various characteristic parameters described above can be used for qualitative and quantitative analysis of samples through a number of measurement methods. However, the general measurement equipment is so expensive that the investment in the measurement equipment is a considerable burden on the casting industry. Then, referring to FIG. 1 ', a schematic diagram of designing a Hall effect measuring tank using the permanent permanent magnet disclosed in the applicant's previous application for the Republic of China No. M309672 patent case, the amount of the Hall effect can be determined by the Hall effect. In order to reach the polarity and concentration of the carrier, the same equipment: the resistance can be measured, and the resistivity can be matched with the Hall effect measurement result to obtain the carrier mobility. 201243356 However, the optoelectronic semiconductor industry has gradually matured and developed rapidly. According to the aforementioned Hall effect measurement slot system, it is impossible to provide a complete measurement. If the concentration of the conductive carrier is measured under the illumination of a specific light source such as ultraviolet light, Since the basic electrical properties such as resistivity and mobility are changed, it is necessary to further improve the development in order to achieve a more comprehensive measurement function. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide an additional light source illumination. Hall effect device for measurement function. Therefore, in order to achieve the above object, the Hall effect measuring device with the light guiding measurement function of the present invention is composed of a test slot, a group of magnet units, a channel and an I sample unit, and the towel test slot has a slot, the set of magnet soaps are disposed parallel to each other on both sides of the test slot to provide a uniform magnetic field' and the channel is penetrated by the periphery of the Hall effect measuring device, one of the iron cells is connected to the slot In order to provide a light source from the outside: irradiated into the slot, and the sample unit has a plurality of electrodes and a sample =,, = vertically placed in the test chamber, wherein the sample holder is used to receive the object to be tested to receive the light source And measuring the relative data by means of a measuring instrument such as a voltmeter or an ammeter electrically connected to the electrodes. According to the invention, the Hall effect measuring device with the light guiding measurement function is configured to transmit the semiconductor element (such as ν, ρ) under the illumination of the specific light source through the (4) fixed money irradiation on the product. Data content such as carrier mobility, carrier mobility or resistivity, reached 201243356. The researcher learned the electrical response of the sample to a specific light source. [Embodiment] A Hall effect measuring device having a light guiding measurement function according to a preferred embodiment of the present invention will be described below with reference to the related drawings. Please refer to FIG. 2 and FIG. 3 as a schematic structural view of a Hall effect measuring device with a light guiding measurement function according to the present invention. As shown in the figure, the Hall effect measuring device 1 of the present invention has a test slot 10, a set of magnet units 20, a channel 3 〇 and a sample unit 40, and a test slot 1 The cymbal has a slot u, and the set of magnet units are disposed parallel to each other on both sides of the test slot 10 to provide a uniform magnetic field, and the channel 30 is penetrated by the Hall effect measuring device 1 One of the units 20 is connected to the slot u for a light source to be externally irradiated into the slot 11, and the sample unit 4 has a plurality of electrodes 41 (Fig. 4) and a sample holder 42 which are placed vertically. Inside the slot 11 of the test slot 1 , it serves as a sample fixture for the Hall effect measuring device 1 . In the present embodiment, the appearance of the Hall effect measuring device 100 is implemented as a cylindrical shape (as shown in Fig. 2), but this embodiment is merely a structure for convenience of construction, and may be designed in any shape. Furthermore, in the embodiment, the magnet unit 20 is two permanent magnets, which are respectively disposed on both sides of the test slot 1 ,, so that the sample unit 40 can be placed at the center of the magnet, for the convenience of use, Here, the uniform magnetic field is set to be about i cm2~1〇〇cm2, and the magnetic field strength 5 201243356 is above 1 〇mT. In addition, in this embodiment, the light 6i entering from the channel 3G can be introduced through the optical fiber, or the LED (light emitting diode) light source 60 can be directly used, and the variable light source such as amplitude modulation light can also be used. In this way, the time-varying relationship of specific optical waves to the electrical parameters of the semiconductor object 5 (), such as the semiconductor, can be measured, and the research unit can have more data. analysis. Please refer to FIG. 3 and FIG. 4 at the same time, wherein the object to be tested 50 has a plurality of electrodes electrically connected to the plurality of electrodes of the sample unit 4 () and the plurality of electrodes 41 of the sample unit 4 are electrically connected. It is connected to a plurality of electrode contacts (not shown), and the external electrode contacts can be electrically connected to a current source, a voltage source, a voltmeter, and an ammeter. The following is illustrated by way of example. In Figure 4, the sample unit 4 is designed to be used for the object to be tested with four ohmic contact electrodes: therefore, the corresponding design has four electrodes, m, and the corresponding design has four An external electrode (not shown), after the object to be tested is connected to the sample unit 40, the sample unit can be placed in the slot U, and by connecting the pins of the voltmeter to the external electrodes, Obtaining the voltage value and comparing with other electrodes such as the relative distance and the thickness of the conductive layer - the data is substituted into the formula to calculate the resistivity, the Hall constant, the carrier-concentrated moving material parameter, and because the material design of the invention has = % is used for the light source to be tested, so it is better to obtain the changes of the data under different light sources. 6 201243356 In summary, the Hall effect measuring device with the light guiding measurement function of the present invention adds a channel capable of introducing a light source to the Hall effect measuring device, except that the strong magnetic field originally provided by the permanent strong magnet is used. Save space, weight and cost, 'allows the penetration of the light source to make specific light... and shoot on the sample. Through the design of the structure, the user can understand the semiconductor components such as N, p under the illumination of a specific light source. Type discrimination, load = degree: carrier! Data content such as shift rate or resistivity is achieved by the researcher's extravagant response to the electrical response of the special light source. The above description is only illustrative, and is not intended to be limiting, and the spirit and scope of the present invention is carried out. It should be included in the scope of the patent application attached. Change or change 201243356 [Simplified description of the drawings] Fig. 1 is a schematic structural view of a conventional Hall measuring device; Fig. 2 is a top view of a Hall effect measuring device with a light guiding measuring function incorporated in a sample unit; Figure 3 is a cross-sectional view of Figure 2 taken along line AA; and Figure 4 is a cross-sectional view of Figure 2 taken along line BB. [Main component symbol description] 100 Hall effect measuring device 10 Test slot 11 Slot 20 Magnet unit 30 Channel 40 Sample unit 41 Electrode 411 Electrode 412 Electrode 413 Electrode 414 Electrode 42 Sample holder 50 Object to be tested 60 Light source 61 Light 200 Huo Effect measuring tank