201240161 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種封裝結構及其製造方法，且特別 是關於一種發光二極體封裝結構及其製造方法。 【先前技術】 隨著顯示科技的長足進步’發展出一種發光二極體 (Light Emiting Doide ’ LED)。發光二極體是由半導體 材料製成的固態發光元件。發光二極體被施加電流於半導 體材料後，將使電子與電洞結合，過剩的能量會以光的形 式釋出，達成發光的效果。 發光二極體屬於冷性發光，其具有壽命長（達十萬小 時以上）、省電、耐震、適合量產、體積小及反應快等優 點，使得發光二極體逐漸取代傳統光源。 發光二極體係透過封裝製程形成一發光二極體封裝 結構，如此可避免發光二極體受到外界的影響。然而，發 ，二極體封裝結構在長時間使用下（或可靠度測試及加速 衰老測4下）經常發現濕氣渗人或銲線斷裂的情況。 的情況嚴重影響發光二極體技術的發展。 ’ 【發明内容】 本發明係有關於一種發光二極體封裝結構及 等問題材料的設計來防止銲線斷裂或濕氣滲入 高。仔發先二極體封裝結構之信賴度得以有效提 201240161 1 VV ft l Jl ΓΛ 根據本發明之一方面，提出一種發光二極體封裝結 構。發光二極體封裝結構包括一載體、一發光二極體、一 銲線及一封裝材料。載體具有一凹槽。發光二極體設置於 凹槽之底部。銲線連接發光二極體及載體。封裝材料覆蓋 發光二極體及銲線。封裝材料包括一第一封裝部及一第二 封裝部。第一封裝部鄰近於凹槽之底部。第二封裝部鄰近 於凹槽之開口，第二封裝部之硬度大於第一封裝部之硬 度。 根據本發明之另一方面，提出一種發光二極體封裝結 構之製造方法。發光二極體封裝結構之製造方法包括以下 步驟。提供一載體，載體具有一凹槽。設置一發光二極體 於凹槽内。以一銲線連接發光二極體及載體。設置一封裝 材料於凹槽内，以覆蓋發光二極體及銲線。以一能量加熱 鄰近凹槽之開口處之封裝材料，以使封裝材料形成一第一 封裝部及一第二封裝部。第一封裝部鄰近於凹槽之底部， 第二封裝部鄰近凹槽之開口，此步驟並使第二封裝部之硬 度大於第一封裝部之硬度。 根據本發明之再一方面，提出一種發光二極體封裝結 構。發光二極體封裝結構包括一載體、一發光二極體、一 銲線及一封裝材料。載體具有一凹槽。發光二極體設置於 凹槽之底部。銲線連接發光二極體及載體。封裝材料覆蓋 發光二極體及銲線，封裝材料之硬度係由凹槽之底部逐漸 向凹槽之開口增加。 根據本發明之另一方面，提出一種發光二極體封裝結 構之製造方法。發光二極體封裝結構之製造方法包括以下 201240161 步驟。提供一載體，載體且 於凹槽内。以一銲線連接發光二“及2-發光二極體 材料於凹槽内，以，： 及載體。設置-封裝 鄰近凹槽之開口處之奸踝以此里加熱 _之底使封裝材料之硬度由凹 槽之底。卩補向凹槽之開口增加。 為讓本發明之上述内容能更 實施例，並配合所附圖式，作詳細：下特舉各種 【實施方式】 = 裂或濃氣渗入等問題，使得發光二極體封裝結= 仏賴度付以有效提高。,然而，實施例僅用以作為範例說 ==限縮本發明欲保護之範圍。此外，實施例中之 圖式‘略部份70件’以清楚顯示本發明之技術特點。 第一實施例 請參照第1圖’其繪示第—實施例之發光二極體封裝 結構100的示㈣。本實_之發光二極體封裝結構⑽ 包括-载體11G、-發光二極體（LED) 12G、一銲線13〇 及:封裝材料140。載體110例如是由基板U1及杯架ιΐ2 所形成。基板1Π例如是一硬式印刷電路板、高熱導係數 銘基板、料基板、料印刷電純或金錢合材料板。 載體110具一凹槽110a。此凹槽u〇a例如是由杯架】12 201240161 1 W /H I jr/Λ 之内側表面與基板111之上表面所形成。然載體110之組 成物並非用以限定本發明，各種載體110之形式皆可應用 於本發明。 發光二極體120設置於凹槽ll〇a之底部。發光二極 體120例如是磷砷化鎵（GaAsP) ΠΙ-V族LED、砷化鋁鎵 UlGaAs) m-V族 LED、鱗化紹鎵銦（AlGalnP) LED、碳 化石夕（SiC) IV族LED、硒化鋅（ZnSe) Π -VI族LED、氮 化鎵（GaN)或氮化銦鎵（InGaN)皿_乂族LED、氮化銦鎵 (InGaN) m-V族 LED 或單一量子井（SQW) m-V族 LED。 然發光二極體12〇之形式並非用以限定本發明，各種發光 二極體120之形式皆可應用於本發明。 鮮線130連接發光二極體12〇及載體之基板 111。銲線130例如是金線、銅線或銅芯鍍金線，然銲線 130之材質並非用以限定本發明，各種銲線130之材質皆 可應用於本發明。 封裝材料140用以覆蓋發光二極體120及銲線130， 以保護發光二極體120及銲線130。封裝材料140例如是 透月狀環氧樹指’然封裝材料14〇之材質並非用以限定本 發明，各種封裝材料140之材質皆可應用於本發明。 在本實施例中，封裝材料140包括一第一封裝部141 及一第二封裝部142。第一封裝部ι41鄰近於凹槽丨丨化之 底邛。第二封裝部142鄰近於凹槽丨1〇a之開口。 就硬度而言，第二封裝部142之硬度大於第一封裝部 141之硬度。如此一來，可以大幅降低銲線與封裝材 料140之間的應力，避免熱漲冷縮等因素造成斷線。本實 6 201240161 A ” / T 1 «/1 Ι~ν 施例之第_裝部141及第二封裝部M2可以皆為固態 曰軟硬衫同）；在—實施例中，第—封裝部i4i可以 疋膠先、而第一封裝部142可以是固態。只要第二封裝部 142之更度大於第—封裝部⑷之硬度皆屬於本發明之範 圍。 就選用材質而言，第一封裝部141及第二封裝部142 可選用相同之材質，並透過各種手段促使其硬度不同。或 者，第一封裝部141及第二封裝部142可選用不同材質， 使其具有不同的硬度。 曰在本實施例中，第一封裝部141之最小厚度M41大 於銲線130之最大高度D130，所以較軟的第一封裝部141 疋整包覆了銲線13〇。如此一來，第一封裝部141可以有 效地幫助銲線130的每一處降低應力。 此外，第二封裝部142密封凹槽li〇a之開口，如此 來’較硬的第二封裝部142可以有效地防止濕氣渗入到 凹槽110a之内。 再者，第一封裝部14ι與第二封裝部142鄰接之表面 S1可以採用不同的實施汰樣來達成各種不同的效果，以符 合不同的需求。如第i圖所示，在本實施例中，第一封裝 部141及第二封襄部142鄰接之表面S1係為平面。鄰接、 之表面S1為平面時，可以降低此鄰接之表面&對光線路 徑的影響，且製程也較容易控制。 此外，請參照第2及3圖，第2圖繪示第一實施例之 發光-極體封裝結構100之製造方法的流程圖，第3圖繪 不第2圖之步驟S105的示意圖。以下所提出之製造方法 201240161 i vv 係以第i圖之發光二極體封裝結構1〇〇為例作說明。然而 該發明所述技術領域中具有通常知識者均可瞭解第2圖之 製造方法並不偈限於第1圖之發光二極體封裝社構1〇〇， 且第i圖之發光二極體封裝結構l00也不侷限於第2圖之 製造方法。 首先’在步驟S101中，提供載體11〇。 接著，在步驟S102中，設置發光二極體12〇於凹槽 110a 内。 然後，在步驟S103中，以銲線130連接發光二極體 120及載體110。 接著，在步驟S104中，設置封裝材料14〇於凹槽110a 内，以覆蓋發光二極體120及銲線130。在此步驟中，封 裝材料140仍然為硬度均勻之材料。 然後’在步驟S105中’如第3圖所示，以一能量加 熱鄰近凹槽ll〇a之開口處之封裝材料14〇,以使封裝材料 140形成硬度不同之第一封裝部141及第二封裝部142(繪 示於第1圖）。在此步驟中，可以利用雷射槍6〇〇射出之 雷射光對封裝材料140進行硬化之製程，並搭配透鏡組700 來聚焦雷射光。透鏡組700可以限定封裝材料140欲硬化 之位置。再透過雷射搶600及透鏡組700至少其中之一的 移動來定義封裝材料14〇欲硬化之範圍。 此外’除了雷射光以外，步驟S105亦可選用紅外線 或紫外線，只要是透過聚焦之手段來限定封裝材料140欲 硬化之位置均不脫離本發明所屬技術範圍。 本實施例之發光二極體封裝結構1〇〇可以搭配上述 201240161 1 τ» /-τι_»ι η 製造方法來實現封襄材料140之設計。並且發光二極體封 裝結構100係利用封裝材料140的設計來防止銲線13〇斷 裂或濕氣滲入等問題，使得發光二極體封裝結構丨〇〇之信 賴度得以有效提高。然而，上述實施例並非用以限定本發 明’以下更提a本發明之各料同實施例來達成不同的效 果，以符合不同的需求。 第二實施例 凊參照第4圖，其繪示第二實施例之發光二極體封裝 結構200之示意圖。本實施例之發光二極體封裝結構2〇〇 與第一實施例之發光二極體封裝結構1〇〇不同之處在於第 一封裝部241及第二封裝部242之鄰接表面S2，其餘相同 之處不再重複敘述。 如第4圖所示，本實施例之第一封裝部241及第二封 裝。I5 242鄰接之表® S2係為弧面。當鄰接之表自％為弧 面時，可以幫助發光二極體12〇的光線向外折射，以提升 發光二極體封裝結構200之出光角度範圍。 第三實施例 請參照第5圖，其繪示第三實施例之發光二極體封裝 二㈣之示意圖。本實施例之發光二極體封農結構_ 、第—實施例之發光二極體封裝結構1〇〇不同之處在於第 —封裝部341及第二封裝部342之鄰接的表面幻，其餘相 同之處不再重複敘述。 八' 如第5圖所示，第-封裝部341及第二封裳部⑽鄰 201240161201240161 VI. Description of the Invention: [Technical Field] The present invention relates to a package structure and a method of fabricating the same, and more particularly to a light emitting diode package structure and a method of fabricating the same. [Prior Art] With the advancement of display technology, a Light Emiting Doide (LED) has been developed. The light emitting diode is a solid state light emitting element made of a semiconductor material. When the light-emitting diode is applied with a semiconductor material, the electrons are combined with the holes, and the excess energy is released in the form of light to achieve a luminous effect. The light-emitting diode is a cold light-emitting device, which has the advantages of long life (up to 100,000 hours), power saving, shock resistance, mass production, small volume and fast response, so that the light-emitting diode gradually replaces the traditional light source. The light-emitting diode system forms a light-emitting diode package structure through a packaging process, thereby preventing the light-emitting diode from being affected by the outside world. However, the hair and diode package structure often finds moisture infiltration or wire breakage under prolonged use (or reliability testing and accelerated aging test 4). The situation has seriously affected the development of light-emitting diode technology. SUMMARY OF THE INVENTION The present invention is directed to a light emitting diode package structure and the like to design a material to prevent wire breakage or moisture infiltration. The reliability of the first diode package structure is effectively improved. 201240161 1 VV ft l Jl ΓΛ According to one aspect of the invention, a light emitting diode package structure is proposed. The LED package structure comprises a carrier, a light emitting diode, a bonding wire and a packaging material. The carrier has a recess. The light emitting diode is disposed at the bottom of the groove. The bonding wire is connected to the light emitting diode and the carrier. The encapsulating material covers the LED and the bonding wire. The package material includes a first package portion and a second package portion. The first encapsulation portion is adjacent to the bottom of the recess. The second encapsulation portion is adjacent to the opening of the recess, and the hardness of the second encapsulation portion is greater than the hardness of the first encapsulation portion. According to another aspect of the present invention, a method of fabricating a light emitting diode package structure is provided. The manufacturing method of the light emitting diode package structure includes the following steps. A carrier is provided which has a recess. A light emitting diode is disposed in the recess. The light emitting diode and the carrier are connected by a bonding wire. A package material is disposed in the recess to cover the light emitting diode and the bonding wire. The encapsulating material adjacent to the opening of the recess is heated by an energy to form the encapsulating material into a first encapsulation portion and a second encapsulation portion. The first encapsulation portion is adjacent to the bottom of the recess, and the second encapsulation portion is adjacent to the opening of the recess. This step makes the hardness of the second encapsulation portion greater than the hardness of the first encapsulation portion. According to still another aspect of the present invention, a light emitting diode package structure is proposed. The LED package structure comprises a carrier, a light emitting diode, a bonding wire and a packaging material. The carrier has a recess. The light emitting diode is disposed at the bottom of the groove. The bonding wire is connected to the light emitting diode and the carrier. The encapsulating material covers the LED and the bonding wire, and the hardness of the encapsulating material is gradually increased from the bottom of the groove toward the opening of the groove. According to another aspect of the present invention, a method of fabricating a light emitting diode package structure is provided. The manufacturing method of the LED package structure includes the following steps 201240161. A carrier is provided and the carrier is in the recess. Connect a light-emitting two "and 2-light-emitting diode material in the groove with a wire bonding wire to: and a carrier. Set-package the smear near the opening of the groove to heat the bottom of the package. The hardness is increased by the bottom of the groove. The opening of the entanglement groove is increased. In order to make the above-mentioned contents of the present invention more exemplified and in conjunction with the drawings, the details are as follows: The problem of gas infiltration and the like makes the light-emitting diode package junction = 仏 付 effective to improve. However, the embodiment is only used as an example to say that == limits the scope of the invention to be protected. In addition, the figure in the embodiment The formula 'slightly 70 pieces' is used to clearly show the technical features of the present invention. For the first embodiment, please refer to FIG. 1 which shows the display (100) of the light-emitting diode package structure 100 of the first embodiment. The light emitting diode package structure (10) includes a carrier 11G, a light emitting diode (LED) 12G, a bonding wire 13A, and an encapsulating material 140. The carrier 110 is formed, for example, by the substrate U1 and the cup holder ι2. For example, a hard printed circuit board, high thermal conductivity index substrate, material base The carrier 110 has a recess 110a. The recess u 〇 a is, for example, a cup holder 12 12 12 40 610 1 W / HI jr / Λ the inner surface and the upper surface of the substrate 111 The composition of the carrier 110 is not intended to limit the present invention, and various forms of the carrier 110 can be applied to the present invention. The light emitting diode 120 is disposed at the bottom of the recess 11a. The light emitting diode 120 is, for example, phosphorus. Gallium arsenide (GaAsP) ΠΙ-V family LED, aluminum gallium arsenide UlGaAs) mV family LED, scalar gallium indium (AlGalnP) LED, carbon carbide SiC (SiC) IV family LED, zinc selenide (ZnSe) Π - VI family of LEDs, gallium nitride (GaN) or indium gallium nitride (InGaN) dishes _ LED LED, indium gallium nitride (InGaN) mV family of LEDs or single quantum well (SQW) mV family of LEDs. The form of 12 并非 is not intended to limit the present invention, and various forms of the light-emitting diode 120 can be applied to the present invention. The fresh wire 130 is connected to the substrate 111 of the light-emitting diode 12 〇 and the carrier. The bonding wire 130 is, for example, a gold wire. Copper wire or copper core gold plating wire, but the material of the wire 130 is not intended to limit the present invention, and the materials of various wire wires 130 can be applied. The encapsulating material 140 is used to cover the LEDs 120 and the bonding wires 130 to protect the LEDs 120 and the bonding wires 130. The encapsulating material 140 is, for example, a moon-shaped epoxy tree or a packaging material. The material is not limited to the present invention, and the materials of the various packaging materials 140 can be applied to the present invention. In this embodiment, the packaging material 140 includes a first encapsulation portion 141 and a second encapsulation portion 142. The first encapsulation portion ι41 Adjacent to the bottom of the groove. The second encapsulation portion 142 is adjacent to the opening of the recess 丨1〇a. The hardness of the second encapsulation portion 142 is greater than the hardness of the first encapsulation portion 141 in terms of hardness. In this way, the stress between the bonding wire and the packaging material 140 can be greatly reduced, and the wire breakage caused by factors such as heat expansion and contraction can be avoided.本实6 201240161 A ” / T 1 «/1 Ι~ν The first embodiment of the mounting portion 141 and the second encapsulating portion M2 can be solid-state soft and hard shirts; in the embodiment, the first package portion The first package portion 142 may be solid state, and the second package portion 142 is more than the hardness of the first package portion (4). The first package portion is selected from materials. The 141 and the second encapsulating portion 142 may be made of the same material and may be made to have different hardnesses by various means. Alternatively, the first encapsulating portion 141 and the second encapsulating portion 142 may be made of different materials to have different hardnesses. In the embodiment, the minimum thickness M41 of the first encapsulation portion 141 is greater than the maximum height D130 of the bonding wire 130, so that the softer first encapsulation portion 141 is covered with the bonding wire 13A. Thus, the first encapsulation portion 141 The stress can be effectively reduced at each of the bonding wires 130. Further, the second encapsulating portion 142 seals the opening of the recess li〇a, so that the 'harder second encapsulating portion 142 can effectively prevent moisture from penetrating into the concave portion. Within the slot 110a. Further, the first encapsulation portion 14i The surface S1 adjacent to the two encapsulating portions 142 can adopt different implementations to achieve various effects to meet different needs. As shown in FIG. 19, in the present embodiment, the first encapsulating portion 141 and the second encapsulation portion The surface S1 adjacent to the crotch portion 142 is a flat surface. When the surface S1 adjacent to the surface is a flat surface, the influence of the adjacent surface & the light path can be reduced, and the process can be easily controlled. In addition, please refer to the second and third figures. 2 is a flow chart showing a manufacturing method of the light-emitting body package structure 100 of the first embodiment, and FIG. 3 is a schematic view showing a step S105 of the second drawing. The manufacturing method 201240161 i vv proposed below is The light-emitting diode package structure 1 of the first embodiment is taken as an example. However, those skilled in the art of the invention can understand that the manufacturing method of FIG. 2 is not limited to the light-emitting diode of FIG. The package structure 100 of the package is not limited to the manufacturing method of Fig. 2. First, in step S101, the carrier 11 is provided. Next, in step S102, Set the light-emitting diode 12〇 Then, in step S103, the light-emitting diode 120 and the carrier 110 are connected by the bonding wire 130. Next, in step S104, the sealing material 14 is disposed in the recess 110a to cover the light-emitting diode. The body 120 and the bonding wire 130. In this step, the encapsulating material 140 is still a material having a uniform hardness. Then, in step S105, as shown in Fig. 3, the opening adjacent to the groove lla is heated by an energy. The encapsulating material 14 is such that the encapsulating material 140 forms the first encapsulating portion 141 and the second encapsulating portion 142 having different hardnesses (shown in FIG. 1). In this step, the process of hardening the encapsulating material 140 by the laser light emitted from the laser gun 6 can be utilized, and the lens group 700 is used to focus the laser light. Lens set 700 can define a location at which encapsulating material 140 is to be cured. The range of the encapsulating material 14 to be hardened is defined by the movement of at least one of the laser grab 600 and the lens group 700. Further, in addition to the laser light, the step S105 may be selected from infrared rays or ultraviolet rays, as long as the position of the encapsulating material 140 to be hardened by means of focusing is not deviated from the technical scope of the present invention. The LED package structure 1 of the present embodiment can be designed in accordance with the above-mentioned 201240161 1 τ» /-τι_»ι η manufacturing method to realize the design of the sealing material 140. Moreover, the LED package structure 100 utilizes the design of the encapsulation material 140 to prevent problems such as breakage of the bonding wire 13 or moisture infiltration, so that the reliability of the LED package structure can be effectively improved. However, the above-described embodiments are not intended to limit the present invention. The various embodiments of the present invention are described below to achieve different effects to meet different needs. Second Embodiment Referring to Figure 4, a schematic diagram of a light emitting diode package structure 200 of a second embodiment is shown. The LED package structure 2 of the present embodiment is different from the LED package structure 1 of the first embodiment in that the adjacent surface S2 of the first package portion 241 and the second package portion 242 are the same. The description will not be repeated. As shown in Fig. 4, the first package portion 241 and the second package of this embodiment. I5 242 Adjacent Table® S2 is a curved surface. When the adjacent table is from the arc, the light of the light-emitting diode 12 向外 can be refracted outward to improve the light-emitting angle range of the light-emitting diode package structure 200. Third Embodiment Referring to Figure 5, there is shown a schematic diagram of a second embodiment of a light emitting diode package according to a third embodiment. The light-emitting diode structure of the present embodiment is different from the light-emitting diode package structure of the first embodiment in that the adjacent surfaces of the first package portion 341 and the second package portion 342 are identical, and the rest are the same. The description will not be repeated.八' As shown in Fig. 5, the first package portion 341 and the second cover portion (10) are adjacent to 201240161
1 W / WA 接之表面S3係為鋸齒狀表面。當鄰接之表面S3為鋸齒狀 表面時，發光二極體120之光線可以均勻地被散射，適合 應用於液晶顯示器之背光模組。 第四實施例 請參照第6圖，其繪示第四實施例之發光二極體封裝 結構400之示意圖。本實施例之發光二極體封裝結構400 及其製造方法與第一實施例之發光二極體封裝結構100及 其製造方法不同之處在於封裝材料440及其加熱之步驟， 其餘相同之處不再重複敘述。 如第6圖所示，本實施例之封裝材料440沒有明顯區 分為第一封裝部及第二封裝部，而封裝材料440之硬度是 由凹槽110a之底部逐漸向凹槽110a之開口增加。透過此 一方式，可以進一步降低封裝材料440本身的應力。 請參照第7圖，其繪示第四實施例之發光二極體封裝 結構400之製造方法的流程圖。在本實施例中，加熱之步 驟S205除了控制能量之聚焦點的位置以外，更精密控制 聚焦點在每一位置的停留時間。舉例來說，聚焦點停留的 越久，封裝材料440則會變的越硬。本實施例之步驟S205 可以控制聚焦點停留之時間長度由凹槽110a之底部逐漸 向凹槽110a之開口增加，來達成硬度逐漸變化的情況。 上述實施例提出各種發光二極體封裝結構及其製造 方法，其利用封裝材料的設計來防止銲線斷裂或濕氣滲入 等問題，使得發光二極體封裝結構之信賴度得以有效提 201240161 且在某些實施方式中，可以對發光二極體之光線路 工乍出控制’或者對難材料之應力作出改善。、、’ 综上所述，雖財發明已以各種實施例揭露如上秋 ”並非用以蚊本發明。本發明所屬技術領域中具有通常 知識者，在不脫離本發明之精神和範圍内，當可作各種之 更動與潤飾。因此，本發明之保護範圍當視後附之 利範圍所界定者為準。 。月專 【圖式簡單說明】 第1圖繪示第一實施例之發光二極體封裝結構的示 意圖。 ’' 第2圖繪示第一實施例之發光二極體封裝結構之製 造方法的流程圖。 第3圖繪示第2圖之步驟S105的示意圖。 第 意圖。 圖繪示第二實施例之發光二極體封裝社構之 不 第5圖繪示第三實施例之發光二極體封验处桃 _ J衣、、、σ構之不 意圖。 第6圖繪示第四實施例之發光二極體封裝結構之八 意圖。 ’' 第7圖繪示第四實施例之發光二極體封骏結構之製 造方法的流程圖。 【主要元件符號說明】 201240161 ι w /h i 100、200、300、400 :發光二極體封裝結構 110 :載體 110a :凹槽 111 :基板 112 :杯架 120 :發光二極體 130 :銲線 140、 240、340、440 :封裝材料 141、 241、341 :第一封裝部 142、 242、342 :第二封裝部 600 :雷射搶 700 :透鏡組 D130 :銲線之最大高度 D141 :第一封裝部之最小厚度 SI、S2、S3 :鄰接之表面 S101〜S105、S205 :流程步驟 121 W / WA The surface S3 is a serrated surface. When the abutting surface S3 is a sawtooth surface, the light of the light emitting diode 120 can be uniformly scattered, and is suitable for use in a backlight module of a liquid crystal display. Fourth Embodiment Referring to Figure 6, a schematic diagram of a light emitting diode package structure 400 of a fourth embodiment is shown. The LED package structure 400 of the present embodiment and the manufacturing method thereof are different from the LED package structure 100 of the first embodiment and the manufacturing method thereof, and the steps of the package material 440 and the heating thereof are the same. Repeat the description. As shown in FIG. 6, the encapsulating material 440 of the present embodiment does not significantly distinguish between the first encapsulating portion and the second encapsulating portion, and the hardness of the encapsulating material 440 is gradually increased from the bottom of the recess 110a toward the opening of the recess 110a. In this way, the stress of the encapsulating material 440 itself can be further reduced. Referring to FIG. 7, a flow chart of a method of fabricating the LED package structure 400 of the fourth embodiment is shown. In the present embodiment, the heating step S205 more precisely controls the dwell time of the focus point at each position in addition to the position of the focus point of the control energy. For example, the longer the focus point stays, the harder the encapsulation material 440 will become. Step S205 of this embodiment can control the length of time during which the focus point stays gradually increases from the bottom of the recess 110a toward the opening of the recess 110a to achieve a gradual change in hardness. The above embodiments provide various light emitting diode package structures and manufacturing methods thereof, which utilize the design of the packaging materials to prevent problems such as wire breakage or moisture infiltration, so that the reliability of the light emitting diode package structure can be effectively raised 201240161 and In some embodiments, it is possible to control the optical line of the light-emitting diode or to improve the stress of the difficult material. In the above, although the invention has been disclosed in various embodiments, it is not intended to be used in the field of the invention. It is to be understood by those skilled in the art without departing from the spirit and scope of the invention. Various modifications and refinements may be made. Therefore, the scope of protection of the present invention is defined by the scope of the appended claims. [Monday] [Simplified Description of the Drawing] FIG. 1 illustrates the light-emitting diode of the first embodiment. FIG. 2 is a flow chart showing a manufacturing method of the light emitting diode package structure of the first embodiment. FIG. 3 is a schematic view showing the step S105 of FIG. 2 . The fifth embodiment of the light-emitting diode package structure of the second embodiment shows the intention of the light-emitting diode package of the third embodiment, which is not intended. The eighth embodiment of the light-emitting diode package structure of the fourth embodiment is shown. FIG. 7 is a flow chart showing the manufacturing method of the light-emitting diode sealing structure of the fourth embodiment. [Main component symbol description] 201240161 ι w /hi 100, 200, 300, 400: light two Pole body package structure 110: carrier 110a: groove 111: substrate 112: cup holder 120: light emitting diode 130: bonding wires 140, 240, 340, 440: encapsulation material 141, 241, 341: first encapsulation portion 142, 242, 342: second encapsulation portion 600: laser shot 700: lens group D130: maximum height D141 of the bonding wire: minimum thickness SI, S2, S3 of the first encapsulation portion: adjacent surfaces S101 to S105, S205: flow step 12