TW201229525A - Electric power measuring apparatus and method - Google Patents

Electric power measuring apparatus and method Download PDF

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Publication number
TW201229525A
TW201229525A TW100134805A TW100134805A TW201229525A TW 201229525 A TW201229525 A TW 201229525A TW 100134805 A TW100134805 A TW 100134805A TW 100134805 A TW100134805 A TW 100134805A TW 201229525 A TW201229525 A TW 201229525A
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Taiwan
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magnetic
magnetic field
film
measuring device
power measuring
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TW100134805A
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Chinese (zh)
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TWI444627B (en
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Atsushi Nakamura
Eiji Iwami
Tomoyuki Sawada
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Panasonic Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

An electric power measuring apparatus is provided with a magnetic field sensor. The magnetic field sensor includes a magnetic film arranged parallel to a primary conductor through which electricity flows, a power supply having a current input and output terminal connected to the first conductor and supplying an element current to the magnetic film, and a detector for detecting the output of the two ends of the magnetic film. The magnetic film consists of a first to forth magnetic body composition constructed in a bridge structure. The power detecting apparatus further includes a voltage input and output terminal connected to a middle position of the current input and output terminal. The voltage input and output terminal forms the detector.

Description

2〇1229525if 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種電力測量裝置以及電力測量方 法，本發明尤其是有關於如下的電力測量裝置，該電力測 量裝置將磁性薄膜用作感測器（sensor)，將電流以及電壓 予以輸入，接者直接將與自兩個輸入獲得的電力相當的信 號予以輸出。 【先前技術】 近年來’利用網際網路（Internet)等的環境日益完備， 包含電力的达距讀表裝置的測量系統（SyStem)正在被開 發。 如下的方法已被使用，例如於現有的累計電力計中附 加對旋轉進行檢測的感測器，或新附加電流計（電流互感 器（Current Transformer，CT))、電壓計（電壓互感^ (Potential TranSf〇rmer，PT)) ’且藉由電子電路或微處理 器（microprocessor)來進行乘法計算，對電力進行測量， 上述現有的累計電力計將已使用的電力轉換為圓盤的旋轉 數，且進行累計運算。然而，如上所述的電力計的狀況在 於：不僅裝置大型化，而且昂貴，另外會消耗多餘的能量 (energy) 〇 因此，希望開發出如下的電力計，該電力計可直接將 消耗電力測定為電量’並且能夠實現小型化以及積體化。 而且，最近已提出如下的電力測量裝置，該電力測量 裝置能夠利用磁性薄膜的磁電阻效應（脱㈣刪Μ繼 4 201229525 effect)，直接將消耗電力測定為電量（非專利文獻1、非 專利文獻2)。 對於與流動有交流的一次導體呈平行地放置（構成於 基板上）的磁性薄膜、與電力感測器而言，採用根據2倍 頻率成分的振幅值來將電力IV予以抽出的方式，上述電 力感測器將一次電壓經由電阻而施加於上述磁性薄膜的兩 端，自磁性薄膜的兩端將輸出予以抽出。 上述電力測量裝置著眼於可利用平面霍爾效應 (planar hall effect)來獲得線性特性，將與電力成比例的 信號成分予以抽出，上述平面霍爾效應是如下的現象，即， 磁性體的電阻值會根據強磁性體等的磁性體内的電流方向 與磁化方向所成的角度而改變。 此處所使用的磁場感測器是將外部磁場的變化轉換為 電氣信號的元件，該磁場感測器使強磁性薄膜或半導體薄 膜等的磁場檢測膜圖案化（patterning)，使電流流入至該 磁場檢測膜的圖案（pattern) ’將外部磁場的變化轉換為電 氣信號作為電壓變化。 此處，輸出信號如下述式〇)所述。 (Al) (A2) 寺__-A._^ ^_— .............' -III I丨II 瞧一丨，、2〇1229525if VI. Description of the Invention: [Technical Field] The present invention relates to a power measuring device and a power measuring method, and more particularly to a power measuring device using a magnetic film as A sensor that inputs current and voltage, and directly outputs a signal equivalent to the power obtained from the two inputs. [Prior Art] In recent years, the environment using the Internet (Internet) has become increasingly complete, and a measurement system (SyStem) including a power meter reading device is being developed. The following methods have been used, for example, a sensor that detects rotation in an existing integrated power meter, or a new additional galvanometer (Current Transformer (CT)), a voltmeter (voltage mutual inductance ^ (Potential) TranSf〇rmer, PT)) 'and the power is measured by multiplication calculation by an electronic circuit or a microprocessor, and the above-mentioned existing integrated power meter converts the used power into the number of rotations of the disk, and Perform a cumulative operation. However, the electric power meter described above is not only large in size but also expensive, and consumes excess energy. Therefore, it is desired to develop a power meter that can directly measure power consumption as The amount of electricity 'can be miniaturized and integrated. Further, recently, a power measuring device capable of directly measuring power consumption as electric power by utilizing the magnetoresistance effect of a magnetic thin film (decision 4 201229525 effect) has been proposed (Non-Patent Document 1, Non-Patent Literature) 2). The magnetic thin film placed in parallel with the primary conductor that is in communication with the flow (constituted on the substrate) and the power sensor are configured to extract the electric power IV according to the amplitude value of the frequency component of the double frequency. The sensor applies a primary voltage to both ends of the magnetic thin film via a resistor, and extracts the output from both ends of the magnetic thin film. The power measuring device described above focuses on obtaining a linear characteristic by using a planar hall effect, and extracts a signal component proportional to electric power. The planar Hall effect is a phenomenon in which a resistance value of a magnetic body is obtained. It changes depending on the angle between the current direction and the magnetization direction in the magnetic body such as a ferromagnetic body. The magnetic field sensor used herein is an element that converts a change in an external magnetic field into an electrical signal, and the magnetic field sensor patterns a magnetic field detecting film such as a ferromagnetic thin film or a semiconductor thin film, and causes a current to flow into the magnetic field. The pattern of the detection film 'converts the change of the external magnetic field into an electrical signal as a voltage change. Here, the output signal is as described in the following formula 〇). (Al) (A2) Temple __-A._^ ^_- .............' -III I丨II 瞧一丨,,

戍麵+ 諧波成分 ω DC 201229525 7pif 此處，輸出分為直流成分的項、與交流成分的項。 A1是與因電橋（bridge)電阻的不平衡（unbalanee) 而產生的電力無關的多餘的項，A2是與電力成比例的項 (瞬時電力）。 ' [先前技術文獻] [非專利文獻] [非專利文獻1]使用有磁性獏的薄膜電力計（電氣學會 磁學研究會資料VOL.MAG-05N〇. 182 ) [非專利文獻2]使用有磁性膜的薄膜電力計（電氣學會 磁學研究會資料VOL.MAG-O8N0.192 ；) 然而，上述電力測量裝置採用如下的方法，且當功率 因數（power factor)並非為1時，必須另外對功率^數進 行測量及運算，上述方法是指對2ω成分的振幅值η · V1 的值進行測量’另外對cose進行測量’接著另外進行乘法 運算，從而獲得η · VI · cose。又，於具有諧波成分的電 流波形的情形時’存在如下的問題，即，僅可將基諧波成 分的電力予以抽出。 又，利用平面霍爾效應的電力測量方法存在如下的問 題，即，輸出值小，且若流動有湧入電流（inrush current) 等的大電流作為檢測電流，則磁性薄膜會發生磁化反轉， 輸出特性會改變。 【發明内容】 本發明是磬於上述實際情況而成的發明，本發明的目 的在於提供如下的電力測量裝置，該電力測量裝置可簡單 6 201229525 HUUD^pif 且穩定地對電力進行測量。 因此，本發明的電力測量裝置的特徵在於：包括磁場 感測器的電力測量裝置，該磁場感測器包括：磁性薄膜， 以與流動有電流的-次導體呈平行的方式配置；供電部， 具有電流輸人輸出端子’該電流輸人輸出端子連接於上述 -次導體，且將元件電流供給至上述磁性以及檢測 部，對上述磁性薄膜兩端的輸出進行檢测，上述磁性薄膜 3採用t橋構造的第i磁性體成分至第4磁性體成分所 =成。電力測量裝置還包括電壓輸人輸出端子，電壓輸入 輸出端子連接於上述紋輸人輸出端子的中間位置。 又，本發明包含如下的内容：於上述電力測量裝置中 該磁場施加單元沿著一個方向將直流 磁％施加於上述磁性薄膜。 又，本發明包含如下的内容：於上述電力測量裝置中， 場施加單元沿著與由—次導體產生的磁場大致正交 的方向，將磁場施加於上述磁性薄膜。 又’本發明包含如下的内容：於上述電力測量裝置中，戍面+ Harmonic component ω DC 201229525 7pif Here, the output is divided into the DC component and the AC component. A1 is an extra item that is independent of the power generated by the unbalane of the bridge resistance, and A2 is a term (instantaneous power) proportional to the electric power. [Non-Patent Document 1] [Non-Patent Document 1] A thin film power meter using magnetic enthalpy (Electrical Society Magnetic Research Society Information VOL.MAG-05N〇. 182) [Non-Patent Document 2] Thin film power meter for magnetic film (Electrical Society Magnetic Research Society data VOL.MAG-O8N0.192;) However, the above power measuring device adopts the following method, and when the power factor is not 1, it must be additionally The power is measured and calculated. The above method is to measure the value of the amplitude value η · V1 of the 2ω component, and measure the cose separately, and then perform a multiplication operation to obtain η · VI · cose. Further, in the case of a current waveform having a harmonic component, there is a problem that only the electric power of the fundamental harmonic component can be extracted. Further, the power measurement method using the planar Hall effect has a problem that the output value is small, and if a large current such as an inrush current flows as a detection current, magnetization reversal occurs in the magnetic film. The output characteristics will change. SUMMARY OF THE INVENTION The present invention has been made in view of the above-described actual circumstances, and an object of the present invention is to provide an electric power measuring device which can measure power stably in a simple manner. Therefore, the power measuring device of the present invention is characterized by: a power measuring device including a magnetic field sensor, the magnetic field sensor comprising: a magnetic film disposed in parallel with the current-flowing secondary conductor; the power supply portion, The current input terminal is connected to the above-mentioned sub-conductor, and the element current is supplied to the magnetic and detecting portion to detect the output of the magnetic film, and the magnetic film 3 is a t-bridge. The i-th magnetic component to the fourth magnetic component of the structure are formed. The power measuring device further includes a voltage input output terminal, and the voltage input/output terminal is connected to an intermediate position of the output terminal of the grain input. Furthermore, the present invention includes the magnetic field applying unit that applies a DC magnetic flux to the magnetic thin film in one direction in the power measuring device. Furthermore, the present invention includes the electric power measuring device in which the field applying unit applies a magnetic field to the magnetic thin film in a direction substantially orthogonal to a magnetic field generated by the secondary conductor. Further, the present invention includes the following contents: in the above power measuring device,

t迷磁性薄膜的呈電橋構造的4個區間分別由曲流 (meander)形狀圖案（婉蜓形狀圖案）所構成。；，L =本發明包含如下的内容:於上述 4個區間的各個區間的長度二 ，區間的長度方向所成的角為90。。 上㈣量裝置中， 201229525 Huu^ypif 又本發明包含如下的内容：於上述電力測量裝置中， 上述磁鐵是由一對磁鐵元件所構成，一對磁鐵元件是以形 成與上述磁場感測器大致呈平行的磁場的方式，配置於上 述磁性薄膜的兩側。 、 又’本發明包含如下的内容：於上述電力測量裝置中， 上述磁鐵S由與上述磁性薄膜面呈平行地配置的—個磁 元件所構成。 本發明包含如下的内容：於上述電力測量裴置中 上述磁鐵包括配置於磁極附近的聚磁部，上述磁極位於 上述磁性薄膜面呈平行地配置的磁鐵元件的兩端。 又，本發明包含如下的内容：於上述電力測量裝置中 2磁鐵包括—對磁鐵元件，—對磁鐵元件是以與上述; 置薄膜形成面呈平行且夾持著上述磁性薄膜的方式而i 又，本發明包含如下的内容：於上述電力測量裝置中 ;上述-對磁鐵元件的同種磁極之間具有聚磁部。 又’本發明包含如下_容：於上述電力測量裝置中 壓抽出部’電壓抽出部形成於與上述磁鐵的如 來的心：t述磁場感測器峨輸入輪出端子〖 上明曰包含如下的内容：於上述電力測量裝置中 過述1導上述磁性薄膜呈平行的方式設置，^ 膜面Ϊ直Γ導與述磁性薄膜財心的面與上述磁性3 8 201229525 又，本發明包含如下的内容：於上述電力測量裝置中， 士述磁場感測器形成於與上述磁場施加單it相同的基板 棋二本發明包含如下的内容:於上述電力測量裝置中， 構成上述磁場感測㈣磁性薄卿成於上述基板上 包括第2磁性薄膜，該第2磁性薄膜是以與 述㈣膜呈平行的方式而形成於上述基板上，上述第 2磁性薄膜位於比上述雜細的外緣更靠外側處。 又，本發明包含如下的内容：於上述電力測量褒置中， 上述磁場施加單元包括形成於上述基板上的第 3磁性薄 绫膜磁性薄膜與上述第2磁性薄膜構成為隔著絕 、、彖膜而夾持者上述磁性薄膜。 、又’對於本發明而言，於上述電力測量裝置中，上述 磁性薄膜形成於上述基板上。 又，本發明的電力測量方法包括下列步驟:使用上述電 力測，褒置’以使雜相對於元件電流的方向呈對稱的方 =，藉由上述電流輪人輪丨端子來將元件電祕給至磁性 /膜的圖案的步驟，藉由上述電壓輸人輸出端子來將因供 ，±述元#電流而產生的輸出的直流成分予以抽出，且作 為電力資訊。 如以上的說明所根據本發明，由於可僅將由電橋 ^引起的變化量予以抽出’因此，可對電力進行運算， ’ _§_無需另外對功率因數進行測量，可直接將 電力予以抽出。 201229525. Huu^ypif 【實施方式】 以下，一面參照圖式，一面詳細地對本發明的實施形 態進行說明。 v 於對本發明的實施形態進行說明之前，先對本發明的 電力測量裝置的測定原理進行說明。於本發明的電力測量 裝置中，以與流動有電流的一次導體呈平行的方式配置著 (強）磁性薄膜3 ’該（強）磁性薄膜3採用電橋構造且 由對稱的第1磁性體成分至第4磁性體成分所構成。而且， 自上述-次導體，經由電橋構造中的輸人輸出端子而將元 件電流供給至上述強磁性薄膜，並且將電壓輸人端子以 電壓輸出端子連接於上述輸人輸出端子的中間位置，對磁 性薄膜兩賴輸出進行檢測。接著，沿 交的方向，將輸出抑㈣，從而直接將電好以=正 ^述方向是將元件電流供給至用作上述_性薄膜且 裱狀圖案的強磁性薄膜時的方向。 亦即如圖1的原理說明圖所示，將點A、b設為 、二該點A、B處於相對於磁性薄膜3的環狀圖案的中 以稱的位置，且處於上述強雜薄顧案的周緣上， 正二設為輸出抽出方向，該線段cd與上述線段Μ ^^ ^過圓的中心。而且，線段AC、線段CB、線 採用電橋構造的第1磁性體成分 至第4磁性體成分所構成。亦 _The four sections of the t-magnetic thin film in the bridge structure are each composed of a meander shape pattern (婉蜓 shape pattern). L = The present invention includes the following two aspects: the length of each of the four sections described above, and the angle formed by the length direction of the section is 90. . In the above-described fourth embodiment, the present invention includes the above-described magnet, wherein the magnet is composed of a pair of magnet elements, and the pair of magnet elements are formed substantially like the magnetic field sensor. Parallel magnetic fields are disposed on both sides of the magnetic film. Further, the present invention includes the electric power measuring device described above, wherein the magnet S is composed of a magnetic element disposed in parallel with the magnetic film surface. The present invention includes the electric power measuring device, wherein the magnet includes a magnetism collecting portion disposed in the vicinity of the magnetic pole, and the magnetic pole is located at both ends of the magnet element in which the magnetic thin film surface is arranged in parallel. Furthermore, the present invention includes the following: in the power measuring device, the magnet includes a pair of magnet elements, and the pair of magnet elements are in parallel with the film forming surface and sandwich the magnetic film. The present invention includes the following contents: in the above-described electric power measuring device; the magnetic pole portion has a magnetic flux portion between the same type of magnetic poles. Further, the present invention includes the following: in the power measuring device, the voltage extracting portion' voltage extracting portion is formed on the same core as the magnet: the magnetic field sensor 峨 input wheel output terminal 〖 In the above-described electric power measuring device, the above-mentioned magnetic film is arranged in parallel, and the surface of the film is aligned with the surface of the magnetic film and the magnetic material. The present invention includes the following contents. In the power measuring device described above, the magnetic field sensor is formed on the same substrate as the magnetic field application unit. The present invention includes the following contents: in the power measuring device, the magnetic field sensing (4) magnetic thinning The second magnetic film is formed on the substrate so as to be parallel to the (four) film, and the second magnetic film is located outside the outer edge of the impurity. . Furthermore, the present invention includes the electric field measuring unit, wherein the magnetic field applying unit includes a third magnetic thin film magnetic film formed on the substrate and the second magnetic film is formed to be separated from each other The film holds the magnetic film as described above. Further, in the above electric power measuring device, the magnetic thin film is formed on the substrate. Moreover, the power measuring method of the present invention comprises the steps of: using the above-mentioned power measurement, setting 'to make the direction of the impurity symmetrical with respect to the direction of the component current=, by means of the above-mentioned current wheel human rim terminal to secretify the component In the step of the pattern of the magnetic/film, the DC component of the output due to the supply of the current is outputted as the power information by the voltage input terminal. As described above, according to the present invention, since only the amount of change caused by the bridge ^ can be extracted', the electric power can be calculated, and the electric power can be directly extracted without measuring the power factor. 201229525. Huu^ypif [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. v Before describing the embodiment of the present invention, the measurement principle of the power measuring device of the present invention will be described. In the power measuring device of the present invention, the (strong) magnetic thin film 3 is disposed in parallel with the primary conductor through which the current flows. The (strong) magnetic thin film 3 has a bridge structure and is composed of a symmetrical first magnetic component. It is composed of the fourth magnetic component. Further, the element current is supplied to the ferromagnetic thin film via the input terminal of the bridge structure, and the voltage input terminal is connected to the intermediate position of the input terminal by the voltage output terminal. The output of the magnetic film is tested. Next, in the direction of the intersection, the output is suppressed (4), so that the direction of the electric current is directly supplied to the direction in which the element current is supplied to the ferromagnetic thin film which is used as the above-mentioned sigma film and has a meander pattern. That is, as shown in the schematic diagram of Fig. 1, the points A and b are set to be two, and the points A and B are in a position relative to the annular pattern of the magnetic thin film 3, and are in the above-mentioned strong miscellaneous On the periphery of the case, the second is set to the output extraction direction, and the line segment cd and the above line segment Μ ^^ ^ are at the center of the circle. Further, the line segment AC, the line segment CB, and the line are composed of the first magnetic body component to the fourth magnetic body component of the bridge structure. Also _

向-正交的方向CD設為二:出將方與向供給4電流的方 此時，如圖1所示，考慮如下的情形，即，使電流II 201229525 HUU^ypif 流入至沿著磁性薄膜3的直徑方向配置的導體200。此時， 當將電流所產生的磁場向量（vector)設為Η，且將元件所 具有的自發磁化（spontaneous magnetization)向量設為μ 時’將磁束密度向量設為ΒΜ0 ’該磁束密度向量是將磁場 向量Η、元件所具有的自發磁化向量μ予以合成所得（參 照圖5)。而且’若將電流密度向量與磁束密度向量所成的 角設為Θ ’將磁性薄膜3的點Α-Β之間的各部分的電阻設 為R ’且將因磁場而發生變化的點Α-Β之間的各部分的電 阻值變化的最大值設為AR，則可利用電壓VA_C與電壓 VA-D之差來表示點c-D之間的電壓VC-D。若將該電壓 VC-D予以數式化’則可表示為 VCD = I2 (△RsinSG) ⑺。 此處’ I為電流密度向量’ BMO為磁束密度向量’ 12 為元件電流。若將流入至一次導體的電流所產生的交流磁 場（磁場向量H)施加於磁性薄膜，則式（2)的VCD的 值會通過原點’而且原點附近（θ%〇)可視為直線，因此， 磁場感測器可謂線性的磁場感測器。 接著’如圖2所示，考慮如下的情形，即，將包含上 述強磁性薄臈的環狀圖案的磁性薄膜3設為4個電橋成分 R1-R4 °將上述電力測量裝置的要部作為等效電路說明圖 而表不於圖3。負載l以及交流電源ρ經由固定電阻r〇 11 201229525. HKjvoypif 而連接於4個電橋成分R1-R4。首先，於圖3所示的等效 電路圖中，下述式（3-1)〜下述式（3-3)成立，點C-D 之間的電壓VC-D與點B-A之間的電壓VB-A成比例（參 照下述式（3-1)〜下述式（3-3))°VBA可設置為與負載 電壓成比例。 •及3 — yB., -I> +/?3 R\In the direction orthogonal to the orthogonal CD, the CD is set to two. The current is supplied to the side and the current. At this time, as shown in FIG. 1, the following situation is considered, that is, the current II 201229525 HUU^ypif flows into the magnetic film. The conductor 200 of the diameter direction of 3 is arranged. At this time, when the vector of the magnetic field generated by the current is set to Η, and the spontaneous magnetization vector of the element is set to μ, the magnetic flux density vector is set to ΒΜ0. The magnetic field vector Η and the spontaneous magnetization vector μ of the element are synthesized (see Fig. 5). Further, 'if the angle formed by the current density vector and the magnetic flux density vector is Θ ', the resistance of each portion between the points Α-Β of the magnetic thin film 3 is set to R ' and the point due to the magnetic field changes - When the maximum value of the change in the resistance value of each portion between turns is set to AR, the voltage VC-D between the points cD can be expressed by the difference between the voltage VA_C and the voltage VA-D. If the voltage VC-D is digitized, it can be expressed as VCD = I2 (ΔRsinSG) (7). Here, 'I is the current density vector' BMO is the magnetic flux density vector '12 is the element current. When an alternating magnetic field (magnetic field vector H) generated by a current flowing into the primary conductor is applied to the magnetic thin film, the value of VCD of the formula (2) passes through the origin 'and the vicinity of the origin (θ% 〇) can be regarded as a straight line. Therefore, the magnetic field sensor can be called a linear magnetic field sensor. Next, as shown in FIG. 2, a case where the magnetic thin film 3 including the above-described ferromagnetic thin ring-shaped annular pattern is set to four bridge components R1 - R4 ° is used as the main part of the above-described electric power measuring device. The equivalent circuit diagram is shown in Figure 3. The load l and the AC power supply ρ are connected to the four bridge components R1-R4 via a fixed resistor r〇 11 201229525. HKjvoypif. First, in the equivalent circuit diagram shown in FIG. 3, the following formula (3-1) to the following formula (3-3) are established, and the voltage V- between the voltage VC-D between the points CD and the point BA- A is proportional (refer to the following formula (3-1) to the following formula (3-3)). The VBA can be set to be proportional to the load voltage. • and 3 — yB., -I> +/?3 R\

一 F (氏+/〇^+/〇 ηA F (氏+/〇^+/〇 η

(3-D 將磁場H=〇時的各電阻值設為ri、R2、r3、以及 R4。根據設計，各電阻值可視為大致相同的值，可設為 R1 = R2 = R3=R4 = r。由於平面霍爾效應，物理性地平行 地放置的成分的電阻會相對於磁場而同樣地發生變化，因 此’可根據磁場而設為Rl—R—AR、R3-^R-AR。根據同 樣的理由’可設為R2—R + AR、R4—►R+AR。 12 201229525 ^fuu^ypif r — —R^R4(3-D Each resistance value when the magnetic field H=〇 is ri, R2, r3, and R4. Depending on the design, each resistance value can be regarded as approximately the same value, and can be set to R1 = R2 = R3 = R4 = r Due to the planar Hall effect, the resistance of the components placed physically in parallel changes in the same manner with respect to the magnetic field, so 'Rl-R-AR, R3-^R-AR can be set according to the magnetic field. The reason ' can be set to R2—R + AR, R4—►R+AR. 12 201229525 ^fuu^ypif r — —R^R4

C-D (R-ARf-jR-i-m)2., = (2R)(2R)~ Vb~aC-D (R-ARf-jR-i-m)2., = (2R)(2R)~ Vb~a

(3-2) 此處，AR因平面霍爾效應而與j成比例。尺為物質固 有的值，k為比例常數，可設4_AR/R=kI。又，簡單地設 為VB —A = V。如此，如下述式（3·3)所述。(3-2) Here, AR is proportional to j due to the planar Hall effect. The ruler is a value that is inherent to the substance, and k is a proportionality constant, which can be set to 4_AR/R=kI. Also, simply set to VB — A = V. Thus, it is as described in the following formula (3·3).

Vc.D=kI V (3-3) 而且，上述電阻的不平衡的程度與負載電流成比例。 因此，C-D之間的電壓VCD與負载電流成比例。因此， C-D之間的電壓VC-D與負載所消耗的電力成比例。 如此’於全電橋（full bridge)電路的情形時，輸出是 由負載電流引起的電阻變化量與負載電壓之積，因此，式 (3-1)〜式（3_3)表明：輸出是直接與電力信號IV成比 例的值。因此，藉由乘以適當的常數Ι/k，可根據c_d之 間的電壓VC-D而獲得電力資訊（I · v)。 相對於此，圖4A以及圖4B表示比較例。圖4A是 使用有單（single)電阻的情形，圖4B是使用有半電橋（half bridge)電路的情形。於使用有單電阻的情形下，當將固 13 201229525 定電阻設為R，且將磁性薄膜的電阻成分設為R1時’磁 性薄膜的電阻成分R1兩端的電壓Vm如下所述。Vc.D = kI V (3-3) Moreover, the degree of unbalance of the above resistance is proportional to the load current. Therefore, the voltage VCD between C-D is proportional to the load current. Therefore, the voltage VC-D between C-D is proportional to the power consumed by the load. In the case of a full bridge circuit, the output is the product of the amount of change in resistance caused by the load current and the load voltage. Therefore, equations (3-1) to (3_3) indicate that the output is directly The power signal IV is proportional to the value. Therefore, by multiplying the appropriate constant Ι/k, the power information (I · v) can be obtained from the voltage VC-D between c_d. On the other hand, FIG. 4A and FIG. 4B show a comparative example. Fig. 4A shows a case where a single resistor is used, and Fig. 4B shows a case where a half bridge circuit is used. In the case where a single resistor is used, when the constant resistance of 201213525 is R and the resistance component of the magnetic thin film is R1, the voltage Vm across the resistance component R1 of the magnetic thin film is as follows.

R+R, 此處’R1與負載電流成比例，但Vm並不與電力成比 例。即便當負載電流為〇時，若V#0,則輸出Vm為Vm#0。 另一方面，如圖4B所示，考慮使用有半電橋電路的 情开>。於使用有半電橋電路的情形下，當將磁性薄膜的2 個電阻成分設為IU、R2時，上述2個電阻成分r卜R2 雨端的輸出電壓VI、V2如下所述。 vx 1 "II丨…·. Λ.+Λ,R+R, where 'R1 is proportional to the load current, but Vm is not proportional to the power. Even when the load current is 〇, if V#0, the output Vm is Vm#0. On the other hand, as shown in Fig. 4B, it is considered to use the case with a half bridge circuit. In the case where a half bridge circuit is used, when the two resistance components of the magnetic thin film are IU and R2, the output voltages VI and V2 of the rain resistors of the two resistance components r and R2 are as follows. Vx 1 "II丨...·. Λ.+Λ,

VV

VV

R~tRR~tR

2R ^(OS+kDv =〇sy+kiy (5) 於半電橋電路t，輸出是與如下的值 成：該值是將由負载電流引起的電阻變== 媒電阻的中心值相加所得的值。因此，輸_包^不依賴 201229525 HUU^ypif 於負載電流的項（0.5 V)，輸出值不會成為電力值。 通常，kl<0.01 ’ VI中的電力資訊為1/5〇以下，即便 利用信號處理來僅將電力信號予以抽出，亦存在S/N比變 得極小的問題。此處，k為比例常數。 如此’已知：於單電阻的情形時，或於半電橋的情形 時，無法直接將電力信號予以抽出。相對於此，於使用有 本發明的全電橋電路的情形時，輸出是由負載電流引起的 電阻變化量與負載電壓之積，因此，輸出直接變成電力信 號。因此’已知：可容易地將電力成分予以抽出。 接著’對如下的方面進行說明，即，本發明的電力測 量裝置較佳為包括磁場施加單元，該磁場施加單元沿著一 個方向將直流磁場施加於磁性薄膜。 ^ ，5是表示磁化方向的說明圖。當藉由磁鐵等的磁場 細*加單元來施加偏磁場（bias magnetic field )( Hb )且進> =時，磁性_4個成分]中的磁化⑴成為施加的: e LiHb與測量磁場（HeX)之和，朗量磁場（Hex) =艮據測量電流而產生的磁場。磁化⑴依賴於偏磁= (自發磁場除外）與測量磁場Hex (外部磁場)'。 磁化（J) =Hb + Hex =而’對於磁性薄膜的電阻值而言，如圖6Α 、說明圖所不，於考慮由R1R4^個磁性薄膜」 15 201229525 *+UUJ^pif 所構成的電橋的情形下，當將電流i與磁化J之間的角度 設為Θ時，Rmr=R+ARcos29，已知：當Θ為〇時，電阻 Rmr的電阻值最大，當Θ為90度時，電阻Rmr的電阻值 最小。 又’圖7A以及圖7B分別表示僅將偏磁場施加於 R1-R4該4個磁阻成分所構成的電橋的情形、以及與偏磁 場一併施加測量磁場的情形，該測量磁場的方向與偏磁場 方向成90°。測量磁場是由測量電流產生的磁場。 又，圖8表示相對於來自外部的測量磁場強度的變化 的電阻值的變化。當R1為Hex = 0時，磁化向量J的方向 為與偏磁場Hb相同的方向。此時，流入至R1的電流方向 與磁化向量所成的角度為45。，Rmr=R+〇.5AR。若測量 電流流動’且沿者圖7B的Hex正方向施加磁場，則磁化 方向J會自Hb方向逐步朝Hex方向傾斜。隨著斜率變大， 在R1中流動的電流與磁化方向J所成的角Θ變大，R1的 電阻值減小。當Hex與Hb相等時，磁化方向J與在ri 中流動的電流所成的角度為90。，Rmr= R，電阻值取得最 小值。若施加更強的Hex，則磁化方向J與在R1中流動的 電流所成的角會超過90。，因此，電阻值上升。測量電流 朝反方向流動。另一方面’當添加-Hex方向的磁場時，隨 著-Hex的絕對值增加，磁化方向J自Hb方向朝-Hex方向 傾斜，電阻值上升。當Hb=丨-Hex |時，磁化方向J與流 入至R1的電流的方向平行（θ = 0)’電阻值的最大值Rmr = R+AR。若使-Hex的絕對值進一步增大，則磁化方向j 201229525 會進一步朝-Hex側傾斜，在R1中流動的電流的方向與磁 化方向J所成的角擴大，電阻值變小。由於流入至R3的 電流的方向與流入至R1的電流的方向相同，因此，相對 於Hex而表現出與R1相同的電阻變化。由於流入至R2、 R4的電流的方向與流入至R1的電流的方向相差9〇。，因 此，相對於Hex而表現出與R1相反的電阻變化。 γ 及二為及4 f, 如上所述，形成電橋構成的4個區間是以如下的方式 構成，即，各個區間的長度方向與相賴區_長度方向 所成的角滿足9G。的關係，沿著與由―次導體產生的磁場 大致正交的方向施加偏磁場，藉此，可使輸出增大。 如此，由於包括磁場施加單元，該磁場施加單元沿著 一個方向將直魅場施加於具有電橋構造的雜薄膜，因 此可奋易地對磁性薄膜的磁化方向進行控制，輸出變大， 士 =得線性。再者’根據上述構成，只要沿著一個方向 二3磁場即可，因此，對於形成電橋構成的4個區間 需一個磁場施加翠元即可， 力=裝置的裝置構成予以簡化。相對於此，於上述非專 而ΐ==Τ時’必須針對每個鄰接元件 以量磁场的方向，或必須使一次導體彎曲，裝置構 17 201229525 4uu^ypif 成複雜。 又，設置比交流的元件電流所產生的磁場更大的直流 磁場，藉此，可抑制薄膜兩端的輸出的波動。 (實施形態1) 對本貫施开>態1的電力測量裝置進行說明。圖10表示 該電力測量裝置中所使用的磁場感測器的頂視圖，圖u 表示剖面圖。圖11是圖10的X1-X1剖面圖。如圖10以 及圖11所示，上述磁場感測器1〇〇包括如下的兩種導體圖 案，一種導體圖案是於包含矽（silicon)的基板i表面形 成氧化矽膜作為絕緣膜2，於該絕緣膜2上，形成包含具 有強磁性特性的磁性薄膜3的4個曲流圖案Rml、Rm2、 Rm3、Rm4 ’且沿著該曲流圖案的直徑方向而構成供電部 5A、5B，另一種導體圖案是作為檢測部5C、5D的導體圖 案，該檢測部5C、5D形成於與自上述供電部5A、5B供 給的元件電流的方向正交的方向。而且’於各導體圖案的 前端設置有焊墊（pad) 10A、10B、10C、10D。 亦即’如圖2的原理說明圖所示’將點a、B設為通 電部，該點A、B處於相對於形成電橋構造的4個磁性薄 膜3的圖案的中心呈對稱的位置，且處於上述強磁性薄膜 圖案的周緣上，將上述線段AB設為供給元件電流的方 向，將線段CD設為輸出抽出方向即檢測方向，該線段cd 與上述方向AB正交，並且通過圓的中心。此處，將供給 凡件電流的供電部5A、5B予以連結的線段、與將檢測部 5C、5D予以連結的線段正交。 201229525 *tuujypif 此處，除了單層構造的強磁性薄臈之外，亦自（強磁 性體/非磁性導電體）構造的反鐵電（antiferro) (#合）型 薄膜、（高橋頑磁力強磁性體/非磁性導電體/低矯頑磁力強 磁性體）構造的感應鐵氧（非耦合）型薄膜、（半強磁性體 /強磁性體/非磁性導電體/強磁性體）構造的自旋閥（spin valve )型薄膜、以及Co/Ag系統的非固溶系顆粒（gmnular ) 型薄膜·#中選擇薄膜來形成形成磁性薄臈。又，可使用金、 銅、以及鋁（aluminum)等作為導體圖案。 接著，對上述磁場感測器的製造步驟進行說明。 於作為基板1的矽基板表面形成作為絕緣膜2的氧化 石夕膜，於該絕緣膜2的上層，藉由賤鍍法（sputtering method)而形成磁性薄膜3。接著，藉由光微影法 (ph〇t〇hth〇graphy)來使上述磁性薄膜3圖案化，以使彼 此鄰接的曲流形狀圖案的主圖案的方向各偏移9()度的方 式，形成4個相同形狀的曲流形狀圖案。 然後’藉㈣鍍法來形成金(gGld)等的導電體薄膜，且 藉由光微影法來實現圖案化，形成如圖1G以及圖U所示 的供電部5A、5B以及檢測部5C、5D。又，在與上述供電 部以及?測部相當的位置形成焊，。 接f根據需要而形成保護膜，從而完成磁場感測器。 此处，曲流形狀圖案的寬度W為1〇μιη，長度L為1 ST二^述方式構成曲流形狀圖案，藉此’於-個曲流 ㈣圖案中，主圖案中的電流方向為2個方向。亦即，如 圖12的要部放大圖所示，主圖案成為與彼此相差90度的 19 201229525f 方向的圖案相組合的組合圖案。因此，圖案長度直接與 Rml的增大相關聯。 如此，根據本實施形態的電力測量裝置，由於將構成 磁場感測器的磁性薄膜的各區塊（block)設為曲流形狀圖 案，因此，不僅磁性薄膜的寬度變小，而且圖案長度增大。 因此，由於上述圖案長度直接與圖案電阻的增大相關聯， 故而電阻增大，可使輸出增大。 為了對上述磁場感測器的輸出特性進行確認，使用如 圖13所示的測疋裝置來進行實驗。將交流自交流電源 507，經由變壓器5〇6以及電阻5〇5而供給至圖13所示的 磁場感測器501的供電部A、B，並且將作為顯示部的示 波器（oscilloscope) 504 經由放大器（amplifier) 5〇2 而連 接於磁場感測器501的檢測部C、D(55〇3是穩定化電源。 再者，上述測定裝置收納於鐵製的外殼（casing) 5〇〇内。 此處，鉛垂地配置搭載有上述元件的元件基板，將元件與 應測定的電流線的相隔距離設為約3mm來進行測定。 根據以上述方式獲得的電流值與元件輸出電壓，不存 在由放大器引起的偏移（0ffset)以外的偏移，可靠性高。 再者，於上述實施形態中，對使用有沿著鉛垂方^配 置的元件基板的測定進行了說明，但亦可將應測定的 載置於元件基板上，藉此來進行測定。 又’於上述實施形態中，較佳為將各曲流形狀圖案中 的線寬設為固定線寬。當上述線寬不固定時，採用如下的 方法亦有效果’該方法例如為以使電阻值對稱的方式來對 20 201229525 ^pif 膜厚進行調整，或附加補助圖案。 又，磁性薄膜為曲流形狀圖案的電橋構造，且為對稱 形狀，因此，易於以相對於元件電流方向呈對稱的方式形 成上述磁性薄膜，從而可提供可靠性高的磁場感測器。 又，將磁性薄膜設為曲流形狀，藉此，磁性薄獏的寬 度變小，電阻增大，可不使元件的外形變大而使電阻值増 大’從而能夠使輸出增大。 曰 另外，形成電橋構成的4個區間是以如下的方式構 成，即，各個區間的長度方向與相鄰的區間的長度方向所 成的角滿足90。的關係。因此，於相鄰的區間中，電阻變 化相反，且會最有效率地引起電阻值的不平衡，因此，可 使輸出增大。 々此處，較佳為如圖14所示’利用環氧（ep〇xy)樹脂 等的保護膜11來將磁性薄膜3予以覆蓋。根據上述構成， 使谷易因磁力而附著於表面的磁性粉不會直接附著於上述 磁性薄膜3，藉此，能夠使輸出特性實現穩定化。 又，於上述電力測量裝置中，將磁場感測器的輸入輸 出焊墊10A-10D配置於封裝（package)的4個角落，藉 此，可於封裝内部分離地形成端子，從而能夠確保絕緣性。 於本實施形態中，未施加測量磁場，但如以下的實施 形態所示，沿著一個方向將測量磁場施加於本實施形態i 的電力測量裝置，藉此，能夠更穩定地對電力進行測量。 (實施形態2) 接著’對本發明的實施形態2進行說明。本實施形態 21 201229525 的電力測里裝置的特徵在於：配置有構成磁鐵元件的磁鐵 300作為磁場施加單元，該磁場施加單元沿著一個方向將 直流磁場施加於磁性薄膜3。磁場感測器晶片（chip) 1〇〇 與圖10所示的上述實施形態、1的磁場感測器晶# 100相 同’包含曲流形狀圖_磁性薄膜是以形成電橋構造的方 式而被連接。箭頭Hb是由上述磁鐵產生的偏磁場。 —此處，如圖UA的概要圖所示，為了沿著與由一次導 =產生的磁場大致正交的方向施加磁場，湘磁場感測 器aa片100的磁性薄膜3的兩侧所配置的一對磁鐵300來 夾持該磁場制⑽。此處，顧元件即磁鐵於寬 度方向上，形成得比上述磁場感測器的封裝更大。此處， 如，15B的局部斷裂概要圖所示，磁場感測器晶片1〇〇的 ’貝J量磁場形成為與磁性薄膜的圖案表面呈平行。 λ 據上述構成，藉由上述磁鐵300所施加的直流磁場 來均等地施加偏磁場，從而可使輸出特性穩定。又，可不 使磁鐵的_增大而料—且強度強的磁場施加於磁性薄 膜3。 又，利用磁鐵來施加偏磁場，藉此，對磁化方向進行 控制，因此，即便當施加有湧入電流等的大電流時，亦不 ，引起磁化反轉，從而能夠穩定地進行測量。再者，此處 較佳為使用強磁性薄膜作為磁性薄膜。 (實施形態3) 接著，對本發明的實施形態3進行說明。本實施形態 的電力測量裝置的特徵在於：與磁場感測器晶片1〇〇的磁 22 201229525 ^vjypxf i·生/專膜3形成面呈平行地配置磁鐵3〇〇。 為了:ί與二:二=見;：圖剖面圖所示， 、 導體11產生的磁場大致正交的方向絲 騎配置，即，將磁場感測器晶片 :二=磁鐵於寬度方向上’形成得比上述磁場感測 ，據上述構成’除了上述實施形態2的效果之外，由 木用—伽鐵即可，因此，可實現低成本化。再者，此 处較佳為使用強磁性薄膜作為磁性薄膜。 (實施形態4) 接著’對本發_實施職4進行綱。本實施形態 、電力測量裝置的特徵在於：除了上述實施職3的構成 ，外，配置有作為聚磁部的磁軛（y〇ke) 21〇。於本實施形 態的電力測量裝置中，亦與磁場感測器晶片⑽的磁性薄 膜3形成面呈平行地配置磁鐵元件即磁鐵3〇〇。 亦即，如圖17A的頂視圖以及圖17B的剖面圖所示， 於磁鐵300的磁極附近配置有作為聚磁部的磁軛21〇，於 磁軛210之間配置有磁場感測器晶片1〇〇。 根據上述構成，除了上述實施形態3的效果之外，由 於磁束被磁軛吸引，因此，朝空氣中洩漏的磁束洩漏量變 小，即便磁鐵小，亦可施加大強度的偏磁場。由於採用一 個磁鐵即可，因此，可實現低成本化。再者，此處較佳為 使用強磁性薄膜作為磁性薄膜。 23 201229525 (實施形態5) 接著，對本發明的實施形態5進行說明。本實施形態 的電力測量裝置的特徵在於：以與磁場感測器晶片100的 磁性薄膜3形成面呈平行且夾持著磁性薄膜3的方式，利 用一對磁鐵300來形成磁鐵3〇〇。 此處，如圖18A的頂視圖以及圖18B的剖面圖所示， 以平行且夾持著磁性薄膜的方式而配設一對磁鐵3⑼。 根據上述構成，除了上述實施形態3的效果之外，可 施加更均-的偏磁場。再者’此處較佳為使用強磁性薄膜 作為磁性薄膜。 (實施形態6) 接著 W不發明的實施形態6進行說明。本實施形; 的電力測量裝置⑽徵在於：於實施形§ 5的電力測量』 置的磁鐵300上，將作為聚磁部的磁輛210分別設置利 同極性的磁極之間，於上述實施形態5的電力測量裝】 中’與磁場感測器晶片咖的磁性薄膜 配置磁鐵300。 此處’·如圖19A的頂視圖以及圖19β的剖面圖所示 寺徵在於··於磁鐵元件即一對磁鐵3〇〇之間且於上述一斐 j 300的磁極附近，呈框狀地配置有磁輛21〇，於上妇 感測=:。210之間，配置有包括磁性細_ 構成’除了上述實施形態3的效果之外，由 於磁束被爾_，因此，較磁鐵小，亦可施加大強度。 24 201229525. 再者，此處較佳為使用強磁性薄膜作為磁性薄膜。 (實施形態7) ' 接著，對本發明的實施形態7進行說明。本實施形態 的，力測量裝置的特徵在於：磁場❹伽彡成於與磁場施 t口單元相同的基板上。圖20A以及圖20B表示上述電力測 量裝置的上表面概要圖以及剖面概要圖。 較佳為例如構成磁場感測器的磁性薄膜3形成於基板 1G上，磁場施加單元包含第2磁性薄膜6，該第2磁性薄 膜6以與上述磁性薄膜呈平行的方式而形成於上述相同的 ^板1G上，且第2磁性薄膜6位於比磁性薄膜的外緣更 靠外側處。再者，此處較佳為使用強磁性薄膜作為磁性薄 膜。 使用經轴面（glaze)力口工的玻璃（glass) *板作為基 板]而且，於上述玻璃基板1G上形成有磁性薄膜3與永 久磁鐵，上述磁性薄膜3由包含NiCQ薄膜的曲流形狀圖 案構成上述永久磁鐵作為磁場施加單元6且包含NdFeB。 根據上述構成，不僅可實現小型化及薄型化，而且雖 於圖中省略，但磁束不會穿過配線部，因此，可更穩定地 對電力進行測量·^ (實施形態8) a接著，對本發明的實施形態8進行說明。於本實施形 態的電力測量裝置中，如圖21A、圖21B所示，包括2個 第2磁f生薄膜如、6b作為磁場施加單元，上述2個第2 磁性薄膜6a、6b形成在形成有磁場感測器的玻璃基板犯 25 201229525 上，且構成磁鐵元件6。而且，以如下的方式來構成上述 磁鐵元件6 ’即’藉由上述第2磁性薄膜6a、6b，隔著絕 緣膜2而夾持著構成曲流形狀圖案的第1磁性薄膜3。 根據上述構成，可容易地提供如下的輸出測量裝置， δ玄輸出測置裝置可由薄膜製程（pr〇cess)形成，小型且可 罪性尚。又，根據上述構成，可實現高輸出化、小型化以 及薄型化。 於實施形態1至實施形態8中，磁場感測器包含晶片 零件，且搭載於構成電路基板的印刷（print)配線基板， 但亦可在構成電路基板的印刷配線基板丨或玻璃基板 上形成直接磁性薄膜3的圖案，利用與配線圖案相同的步 驟來形成構成供電部及檢測部的導體圖案， 化。而且，放大器或A/D轉換器、中央處理單元 Processing Unit ’ CPU)包含晶片零件。或者，亦可將處理 電路集成於碎基板上’並且隔著絕緣膜而形成磁場感測 器’從而形成單塊（monolithic)元件。 根據上述構成，可進一步實現薄型化及小型化。 再者，當然亦可於上述實施形態i至實施形態8中所 測量裝置中使用單塊元件，該單塊元件是將磁 性缚膜與作為磁場施加單元的磁娜成於相同的 j的元件。再者’此處較㈣使㈣贿薄膜^磁性薄 26 201229525 從而可進一步實現薄型化、小型化。 、。。又，於上述電力測量裝置中，亦可利用如下的磁場感 測益來構柄場感靡，上賴場M H包括：形成於基 板上的磁性供電部，具有將元件電流供給至磁性薄 膜的輸^輪出端子；以及㈣電極部，對磁性薄膜兩端的 輸出進讀測’配線®案包含與供電部及檢測電極部相同 的導體層。 ,、根據上述構成，除了通常的電路基板的構成之外，僅 形成磁性體薄膜的圖案即可，因此，可極容易地形成。 一又，於上述電力測量裝置中，較佳為以使磁阻相對於 70件電流的供給方向呈對稱的方式，職磁性薄膜。此處， 可藉由電阻值相等且形狀相同的磁性薄膜圖案來獲得磁阻 呈對稱的構成。 根據上述構成，以使磁阻相對於元件電流的方向呈對 稱的方式，形成上述磁性薄膜，因此，可大幅度地取得感 測器輸出Vmr的最大值，系統的S/N比提高。 又，上述電力測量裝置亦可包括並聯地連接於檢測部 的電容器（condenser )。 根據上述構成，利用電容器來將Vmr信號予以平滑 化’藉此，可於不足週期的短期間内將直流成分予以抽出月， 因此’可高速崎得電力值，且可簡單的電路 對直流成分進行檢測。 又，使用上述電力測量裝置，以磁阻相對於元件電流 的方向呈對稱的方式，將元件電流供給至磁性薄膜的圖案 27 201229525 πυυ^νρίί 的步驟’將因供給上述元件電流而產生的輸出的直流成分 予以抽出，且設為電力資訊。 根據上述構成，無需另外對功率因數進行測量’可簡 單地進行測量，且與利用乘法的情形相比較，誤差亦減少。 又，磁場感測器亦可包括：磁性薄膜；供電部，具有 將元件電流供給至磁性薄膜的輸入輸出端子；以及檢測 部’對與元件電流的供給方向正交的方向上的上述磁性薄 膜（端部之間）的電壓進行檢測，以使磁阻相對於元件電 流的方向呈對稱的方式，形成磁性薄膜。 根據上述構成’將磁性薄膜的輸出抽出方向設為與元 件電流方向正交的方向，並且以使磁阻相對於元件電流的 方向呈對稱的方式，形成上述磁性薄膜，藉此，由於可對 =向的正貞騎狀，且在不施㈣場時，偏移消失，因 此’可使電路構成變得簡單。 以使二= : 至磁性薄膜的圖案，在與上述元件=的供Γ方向 檢===薄⑼部之間)的電行 再者，此處較佳為使用強磁性键 (實施形態9) 生相作為磁性薄膜。 再者’於上述實施形態中，斜如 、 說明，該磁場感測器包含使用有曲涂，磁％感测器進行 臈，但並不限定於曲流形狀職:形狀圖案的磁性薄 下，對曲流形狀圖案 28 201229525 以外的例子進行說明。 如圖22至圖24所示，本實施形態的特徵在於：沿著 磁性薄膜3的環的内周，形成有強磁性薄膜的補助圖^ 4 作為相似形狀即圓狀的内部磁性薄膜，上述磁性薄膜3構 成在上述實施形態1的說明之前所說明的本發明的磁場感 僅附加有上述補助圖案4作為構成，其他構成與上述 實施形態1相同，此處省略說明。對相同部位附上相同符 號。此處’圖22是上述磁場感測器的原理說明圖，圖23 表示頂視圖，圖24表示剖面圖。上述磁場感測器基本上與 圖1所示的例子相同，但由於存在上述補助圖案4，因此， 在電阻提高的狀態下，磁感度提高。外侧的環狀圖案（3 ) 與内部的補助圖案4並不電性接觸，因此，電阻與上述實 施形態1的磁場感測器相同，但於磁性方面，由於空間部 被磁性薄臈填埋，因此，可對更多的磁束進行引導，從而 可實現高感度化。 如此’根據本實施形態，於磁性體之間形成有空間， 因此，對於外部磁場的感度會下降。因此，在使電阻提高 的狀態下，為了僅使磁感度提高’電性獨立地設置内部磁 性薄膜，藉此，可進一步實現高感度化。 再者’作為元件構造，如圖25的變形例所示，亦可形 成磁性體薄膜圖案之後，利用包含聚醯亞胺樹脂的保護絕 緣膜16來將整個基板表面予以包覆，隔著通孔（也⑺叩乜 h〇le)而形成供電部5A、5B以及檢測部5C、5D。根據上 29 201229525 wu^ypif 且可提供可靠性高的 述構成，可防止磁性體薄膜的劣化 磁場感測器。 此外’軸於環狀圖案的内部的補助圖案可包含相同 ΐϋΙΐΓ，亦可姻包含其他㈣ 來形成補助圖案24。 利用包含與磁性薄膜相同的材料的磁性薄膜來構成内 ^磁性薄断補助圖案，藉此，可提供如下的磁場感測器， _場感測H易於製造，僅圖案發生變更，感度高且可靠 “人，洲興磁性溥膜不_樹生薄膜來構成内部则 缚膜即補助圖案，藉此，可對感度進行調整。又，於並與 地排列多個磁場感測器的情形時，為了使感度—致，细 部磁性薄_材料it行調整，||此，亦可對感歧行調整 再者，除了氧化矽膜或氧化鋁等的無機膜之外，亦习 使用聚醯亞胺樹脂、酚醛樹脂等的有機膜作為保護膜。月 者’此處較佳為使用強磁性薄膜作為磁性薄膜。 (實施形態10) 接著’對本發明的實施形態10進行說明。本實施形態 的特徵在於：如圖27以及圖28所示，強磁性薄膜包含正 方^的環狀圖案33，以使電流沿著上述正方形的對角線方 向流動的方式而設置供電部5A、5B，沿著與上述供電部 5A、5B正交的方向形成檢測部5C、5D。 於本實施形態中，亦僅形成有正方形的環狀圖案33 來代替上述實施形態1的磁場感測器的環狀圖案3 /其他 30 201229525 構成與上述實施形態1相同，此處省略說明。對相同部位 附上相同符號。此處’圖27是上述磁場感測n的原理說明 圖’圖28是頂視圖。 此處’磁束密度向量是元件所具有的自發磁化向量m 與測量磁場向量Η的合成向量，當無來自外部的測量磁場 時’磁束密度向1成為自發磁化向量方向。於測量磁場為 交流磁場的情形時’該測量磁場是以自發磁化向量為中 心，沿著圖的上下方向振動。 根據上述構成，可利用下述式絲减·的輸出 Vmr。 然而，與上述内容同樣地，將電流密度向量與磁束密 度向里所成的角设為Θ1、Θ2，將AB與AC及AB與AD 所成的角设為φ，將無測量磁場時的Ac之間的電壓設為 VAC0，將AD之間的電壓設為VAD()，將由磁電阻效應引 起的電壓變化的最大值設為AVr。 31 201229525. Huu^ypif = {VAC0 +AVrcos2^l}-{yAm +AFrcos2^} = {^ϋ〇 +AFrcos2<9t}-{i^lx> +AFrcos2(^ -2^)} ^ ^ (8) 而且當VACO = VAD。時2R ^(OS+kDv =〇sy+kiy (5) In the half bridge circuit t, the output is equal to the following value: the value is obtained by adding the resistance value caused by the load current == the center value of the dielectric resistance Therefore, the input_package does not depend on the 201229525 HUU^ypif term (0.5 V) of the load current, and the output value does not become the power value. Usually, the power information in the kl <0.01 'VI is 1/5〇 or less. Even if signal processing is used to extract only the power signal, there is a problem that the S/N ratio becomes extremely small. Here, k is a proportional constant. Thus, it is known: in the case of a single resistor, or in the case of a half bridge. In this case, the power signal cannot be directly extracted. In contrast, when the full bridge circuit of the present invention is used, the output is the product of the resistance change amount and the load voltage caused by the load current, and therefore, the output directly becomes Power signal. Therefore, it is known that the power component can be easily extracted. Next, the following aspects are explained, that is, the power measuring device of the present invention preferably includes a magnetic field applying unit which is in one direction will The flow magnetic field is applied to the magnetic film. ^ , 5 is an explanatory diagram showing the magnetization direction. When a bias magnetic field (Hb ) is applied by a magnetic field fine magnet plus a unit such as a magnet, and magnetic _ The magnetization (1) in the four components is applied: the sum of e LiHb and the measured magnetic field (HeX), the magnetic field (Hex) = the magnetic field generated by the measured current. The magnetization (1) depends on the bias magnet = (except for the spontaneous magnetic field) ) and the measurement magnetic field Hex (external magnetic field)'. Magnetization (J) = Hb + Hex = and 'For the resistance value of the magnetic film, as shown in Fig. 6 、, the figure is not, consider the R1R4^ magnetic film" 15 201229525 *+UUJ^pif In the case of a bridge, when the angle between the current i and the magnetization J is Θ, Rmr=R+ARcos29, it is known that when Θ is 〇, the resistance of the resistor Rmr The value is the largest, and when the Θ is 90 degrees, the resistance value of the resistor Rmr is the smallest. Further, FIGS. 7A and 7B respectively show a case where only a bias magnetic field is applied to the bridge formed by the four magnetoresistive components of R1 - R4, and When a measuring magnetic field is applied together with a bias magnetic field, the direction of the measuring magnetic field is 9 with the direction of the bias magnetic field. 0. The measured magnetic field is the magnetic field generated by the measured current. Further, Fig. 8 shows the change in the resistance value with respect to the change in the measured magnetic field strength from the outside. When R1 is Hex = 0, the direction of the magnetization vector J is biased. The magnetic field Hb is in the same direction. At this time, the direction of the current flowing into R1 and the magnetization vector is 45. Rmr=R+〇.5AR. If the current flow is measured and the magnetic field is applied in the positive direction of Hex in Fig. 7B, Then, the magnetization direction J is gradually inclined from the Hb direction toward the Hex direction. As the slope becomes larger, the angle of the current flowing in R1 and the magnetization direction J becomes larger, and the resistance value of R1 decreases. When Hex is equal to Hb, the angle between the magnetization direction J and the current flowing in ri is 90. , Rmr = R, the resistance value gets the minimum value. If a stronger Hex is applied, the angle between the magnetization direction J and the current flowing in R1 will exceed 90. Therefore, the resistance value rises. The measuring current flows in the opposite direction. On the other hand, when a magnetic field in the -Hex direction is added, as the absolute value of -Hex increases, the magnetization direction J is inclined from the Hb direction toward the -Hex direction, and the resistance value rises. When Hb = 丨 - Hex |, the magnetization direction J is parallel to the direction of the current flowing into R1 (θ = 0)' The maximum value of the resistance value Rmr = R + AR. When the absolute value of -Hex is further increased, the magnetization direction j 201229525 is further inclined toward the -Hex side, and the angle between the direction of the current flowing in R1 and the magnetization direction J is increased, and the resistance value is decreased. Since the direction of the current flowing into R3 is the same as the direction of the current flowing into R1, the same resistance change as that of R1 is exhibited with respect to Hex. The direction of the current flowing into R2 and R4 is different from the direction of the current flowing into R1 by 9 〇. Therefore, the resistance change opposite to R1 is exhibited with respect to Hex. γ and two are and 4 f. As described above, the four sections formed by the bridge are configured such that the angle formed by the longitudinal direction of each section and the length direction of the adjacent zone satisfies 9G. The relationship is such that the bias magnetic field is applied in a direction substantially orthogonal to the magnetic field generated by the secondary conductor, whereby the output can be increased. In this way, since the magnetic field applying unit includes the magnetic field applying unit in a direction to apply the straight field to the impurity film having the bridge structure, the magnetization direction of the magnetic film can be easily controlled, and the output becomes large, Linear. Further, according to the above configuration, it is only necessary to apply two or three magnetic fields in one direction. Therefore, it is only necessary to apply a green field to the four sections forming the bridge, and the device configuration of the force = device is simplified. On the other hand, in the above-mentioned non-specific ΐ==Τ, the direction of the magnetic field must be directed for each adjacent element, or the primary conductor must be bent, and the device structure is complicated. Further, a DC magnetic field larger than the magnetic field generated by the AC element current is provided, whereby fluctuations in the output across the film can be suppressed. (Embodiment 1) A power measuring device of the present embodiment 1 will be described. Fig. 10 is a top view showing a magnetic field sensor used in the electric power measuring device, and Fig. u is a cross-sectional view. Figure 11 is a cross-sectional view taken along line X1-X1 of Figure 10; As shown in FIG. 10 and FIG. 11, the magnetic field sensor 1A includes two kinds of conductor patterns, and a conductor pattern is formed by forming a ruthenium oxide film as the insulating film 2 on the surface of the substrate i including silicon. On the insulating film 2, four meander patterns Rml, Rm2, Rm3, and Rm4' including the magnetic thin film 3 having ferromagnetic characteristics are formed, and the power supply portions 5A, 5B are formed along the radial direction of the meander pattern, and another conductor is formed. The pattern is a conductor pattern as the detecting portions 5C and 5D, and the detecting portions 5C and 5D are formed in a direction orthogonal to the direction of the element current supplied from the feeding portions 5A and 5B. Further, pads 10A, 10B, 10C, and 10D are provided at the tips of the respective conductor patterns. That is, as shown in the schematic diagram of Fig. 2, the points a and B are set as the energizing portions, and the points A and B are symmetrical with respect to the center of the pattern of the four magnetic thin films 3 forming the bridge structure. And on the periphery of the ferromagnetic thin film pattern, the line segment AB is set to the direction in which the element current is supplied, and the line segment CD is set as the output extraction direction, that is, the detection direction, the line segment cd is orthogonal to the above direction AB, and passes through the center of the circle . Here, the line segment connecting the power supply portions 5A and 5B to which the workpiece current is supplied is orthogonal to the line segment connecting the detecting portions 5C and 5D. 201229525 *tuujypif Here, in addition to the single-layer structure of the ferromagnetic thin crucible, it is also an antiferroelectric (#合) type film constructed from (strong magnetic/non-magnetic conductor). Inductive ferrite (non-coupling) type film (magnetic semi-strong magnetic body / ferromagnetic body / non-magnetic electric conductor / ferromagnetic body) constructed by magnetic / non-magnetic conductor / low coercive force ferromagnetic body A thin film is selected from a spin valve type film and a non-solid-solution type film (gmnular type film) of Co/Ag system to form a magnetic thin film. Further, gold, copper, aluminum, or the like can be used as the conductor pattern. Next, the manufacturing steps of the above magnetic field sensor will be described. An oxidized oxide film as the insulating film 2 is formed on the surface of the ruthenium substrate as the substrate 1, and a magnetic thin film 3 is formed on the upper layer of the insulating film 2 by a sputtering method. Next, the magnetic thin film 3 is patterned by a photolithography method so that the directions of the main patterns of the meander shape patterns adjacent to each other are shifted by 9 (degrees) each. Four meander shape patterns of the same shape are formed. Then, a conductor film such as gold (gGld) is formed by the (four) plating method, and patterning is performed by photolithography to form the power supply portions 5A and 5B and the detecting portion 5C as shown in FIG. 1G and FIG. 5D. Further, welding is formed at a position corresponding to the power supply unit and the measurement unit. The f is formed as needed to form a protective film, thereby completing the magnetic field sensor. Here, the width W of the meander shape pattern is 1 〇μιη, and the length L is 1 ST. The pattern forms a meander shape pattern, whereby the current direction in the main pattern is 2 in the pattern of the meander (four) pattern. Directions. That is, as shown in the enlarged view of the essential part of Fig. 12, the main pattern is a combined pattern of patterns in the direction of 19 201229525f which are different from each other by 90 degrees. Therefore, the pattern length is directly related to the increase in Rml. As described above, according to the power measuring device of the present embodiment, since the blocks of the magnetic thin film constituting the magnetic field sensor are in the meander shape pattern, not only the width of the magnetic film is reduced but also the pattern length is increased. . Therefore, since the above pattern length is directly associated with an increase in pattern resistance, the resistance is increased and the output can be increased. In order to confirm the output characteristics of the above magnetic field sensor, an experiment was performed using the measuring device shown in Fig. 13. The AC power supply 507 is supplied to the power supply portions A and B of the magnetic field sensor 501 shown in FIG. 13 via the transformer 5〇6 and the resistor 5〇5, and an oscilloscope 504 as a display portion is passed through the amplifier. (amplifier) 5〇2 is connected to the detecting units C and D of the magnetic field sensor 501 (55〇3 is a stabilizing power source. Further, the measuring device is housed in a casing 5 made of iron. The element substrate on which the above-described element is mounted is placed vertically, and the distance between the element and the current line to be measured is set to be about 3 mm. The current value and the element output voltage obtained in the above manner are not present by the amplifier. The offset other than the offset (0ffset) is high in reliability. In the above embodiment, the measurement using the element substrate arranged along the vertical side has been described, but the measurement may be performed. In the above embodiment, it is preferable that the line width in each of the meander shape patterns is a fixed line width. When the line width is not fixed, the line width is used. as follows The method is also effective. The method is, for example, to adjust the film thickness of 20 201229525 ^pif in a manner that makes the resistance value symmetrical, or to add a supplementary pattern. Further, the magnetic film is a bridge structure of a meander shape pattern and has a symmetrical shape. Therefore, it is easy to form the magnetic thin film in a symmetrical manner with respect to the current direction of the element, thereby providing a highly reliable magnetic field sensor. Further, the magnetic thin film is formed in a meander shape, whereby the width of the magnetic thin raft When the electric resistance is increased, the electric resistance is increased, and the electric resistance can be increased without increasing the outer shape of the element. 4 In addition, the four sections forming the bridge are configured as follows, that is, each section The angle formed by the longitudinal direction and the longitudinal direction of the adjacent section satisfies the relationship of 90. Therefore, in the adjacent sections, the resistance changes inversely, and the imbalance of the resistance value is most efficiently caused. The output is increased. Here, it is preferable to cover the magnetic thin film 3 with a protective film 11 such as an epoxy (ep〇xy) resin as shown in Fig. 14. According to the above configuration, The magnetic powder which adheres to the surface by magnetic force does not directly adhere to the magnetic thin film 3, whereby the output characteristics can be stabilized. Further, in the above-described electric power measuring device, the input and output of the magnetic field sensor are performed. The pads 10A-10D are disposed at four corners of the package, whereby the terminals can be formed separately in the package, and insulation can be ensured. In the present embodiment, the measurement magnetic field is not applied, but the following implementation is performed. In the embodiment, the measurement magnetic field is applied to the power measuring device of the embodiment i in one direction, whereby the electric power can be measured more stably. (Embodiment 2) Next, Embodiment 2 of the present invention will be described. In the electric power measuring device of the present invention, the magnet 300 is configured as a magnetic field applying unit that applies a DC magnetic field to the magnetic thin film 3 in one direction. The magnetic field sensor chip 1 is the same as the magnetic field sensor crystal #100 of the above-described embodiment and 1 shown in FIG. 10, and includes a meander shape map. The magnetic thin film is formed by forming a bridge structure. connection. The arrow Hb is a bias magnetic field generated by the above magnet. - Here, as shown in the schematic diagram of UA, in order to apply a magnetic field in a direction substantially orthogonal to the magnetic field generated by the primary conduction =, both sides of the magnetic thin film 3 of the magnetic field sensor aa sheet 100 are disposed. A pair of magnets 300 hold the magnetic field (10). Here, the element, i.e., the magnet, is formed in the width direction to be larger than the package of the above-described magnetic field sensor. Here, as shown in the partial fracture profile of 15B, the magnetic field of the magnetic field sensor wafer 1 is formed to be parallel to the pattern surface of the magnetic film. According to the above configuration, the bias magnetic field is uniformly applied by the DC magnetic field applied by the magnet 300, whereby the output characteristics can be stabilized. Further, a magnetic field having a high strength can be applied to the magnetic thin film 3 without increasing the amount of the magnet. Further, since the magnetization direction is controlled by applying a bias magnetic field to the magnet, even when a large current such as an inrush current is applied, the magnetization reversal is caused, and the measurement can be stably performed. Further, it is preferable to use a ferromagnetic film as the magnetic film here. (Embodiment 3) Next, Embodiment 3 of the present invention will be described. The electric power measuring device according to the present embodiment is characterized in that the magnets 3 are arranged in parallel with the surface of the magnetism sensor wafer 1 磁 22 201229525 ^vjypxf i. For: ί and 2: 2 = see;: as shown in the cross-sectional view, the magnetic field generated by the conductor 11 is arranged in a substantially orthogonal direction, that is, the magnetic field sensor wafer: two = magnets are formed in the width direction According to the magnetic field sensing described above, in addition to the effects of the above-described second embodiment, it is possible to use wood-gauge for wood, and therefore, cost reduction can be achieved. Further, it is preferable to use a ferromagnetic film as the magnetic film. (Embodiment 4) Next, the course of the present invention is carried out. In the present embodiment, the power measuring device is characterized in that a yoke (21 〇) 21 作为 is provided as a magnetic fluxing portion in addition to the configuration of the above-described third embodiment. In the power measuring device of the present embodiment, the magnet element 3, which is a magnet element, is disposed in parallel with the surface on which the magnetic film 3 of the magnetic field sensor wafer (10) is formed. That is, as shown in the top view of FIG. 17A and the cross-sectional view of FIG. 17B, a yoke 21A as a magnetic flux portion is disposed in the vicinity of the magnetic pole of the magnet 300, and a magnetic field sensor wafer 1 is disposed between the yokes 210. Hey. According to the above configuration, in addition to the effects of the third embodiment, since the magnetic flux is attracted by the yoke, the amount of leakage of the magnetic flux leaking into the air is small, and even if the magnet is small, a large magnetic field of bias can be applied. Since a magnet can be used, cost reduction can be achieved. Further, it is preferable to use a ferromagnetic film as the magnetic film here. 23 201229525 (Embodiment 5) Next, Embodiment 5 of the present invention will be described. In the power measuring device of the present embodiment, the magnets 3 are formed by a pair of magnets 300 so as to be parallel to the surface on which the magnetic thin film 3 of the magnetic field sensor wafer 100 is formed and sandwiched between the magnetic thin films 3. Here, as shown in the top view of FIG. 18A and the cross-sectional view of FIG. 18B, a pair of magnets 3 (9) are disposed so as to sandwich the magnetic thin film in parallel. According to the above configuration, in addition to the effects of the above-described third embodiment, a more uniform bias magnetic field can be applied. Further, it is preferable to use a ferromagnetic film as the magnetic film. (Embodiment 6) Next, Embodiment 6 in which W is not invented will be described. The power measuring device (10) of the present embodiment is characterized in that, among the magnets 300 for performing the power measurement of the § 5, the magnetic poles 210 as the magnetic fluxing portions are respectively provided between the magnetic poles of the same polarity, in the above embodiment. The power measuring device of 5 is configured with a magnetic film 300 of a magnetic film of a magnetic field sensor. Here, as shown in the top view of FIG. 19A and the cross-sectional view of FIG. 19β, the temple is located between the pair of magnets 3〇〇, which are magnet elements, and in the vicinity of the magnetic pole of the above-mentioned Fiji 300. It is equipped with a magnetic vehicle 21〇, which is sensed by the woman. In addition to the effects of the above-described third embodiment, the arrangement of the magnetic thinness constituting the magnetic core is different from that of the magnet. Therefore, a large strength can be applied. 24 201229525. Further, it is preferable to use a ferromagnetic film as the magnetic film. (Embodiment 7) Next, Embodiment 7 of the present invention will be described. In the power measuring device of the present embodiment, the magnetic field is formed on the same substrate as the magnetic field application unit. 20A and 20B are a schematic top view and a schematic cross-sectional view of the electric power measuring device. Preferably, for example, the magnetic thin film 3 constituting the magnetic field sensor is formed on the substrate 1G, and the magnetic field applying unit includes the second magnetic thin film 6, and the second magnetic thin film 6 is formed in parallel with the magnetic thin film. On the plate 1G, the second magnetic film 6 is located outside the outer edge of the magnetic film. Further, it is preferable to use a ferromagnetic film as the magnetic film here. A glass plate* is used as a substrate by a glaze force. Further, a magnetic film 3 and a permanent magnet are formed on the glass substrate 1G, and the magnetic film 3 is formed of a meander shape pattern including a NiCQ film. The permanent magnet is configured as the magnetic field applying unit 6 and contains NdFeB. According to the configuration described above, not only can the size and thickness be reduced, but the magnetic flux does not pass through the wiring portion, so that the electric power can be measured more stably. (Embodiment 8) Embodiment 8 of the invention will be described. As shown in FIG. 21A and FIG. 21B, the electric power measuring apparatus according to the present embodiment includes two second magnetic thin films, for example, 6b as magnetic field applying means, and the two second magnetic thin films 6a and 6b are formed with The glass substrate of the magnetic field sensor is on 25 201229525 and constitutes a magnet element 6. In addition, the first magnetic thin film 3 constituting the meander shape pattern is sandwiched by the insulating film 2 by the above-described second magnetic thin films 6a and 6b. According to the above configuration, the following output measuring device can be easily provided, and the δ meta-output measuring device can be formed by a thin film process, which is small and sinful. Further, according to the above configuration, it is possible to achieve high output, miniaturization, and thinning. In the first to eighth embodiments, the magnetic field sensor includes a wafer component and is mounted on a printed wiring board constituting the circuit board. However, the magnetic field sensor may be directly formed on the printed wiring board or the glass substrate constituting the circuit board. The pattern of the magnetic thin film 3 is formed by the same steps as the wiring pattern to form a conductor pattern constituting the power supply portion and the detecting portion. Moreover, the amplifier or A/D converter, the central processing unit Processing Unit' CPU, contains the wafer components. Alternatively, the processing circuit may be integrated on the broken substrate 'and the magnetic field sensor' may be formed via the insulating film to form a monolithic element. According to the above configuration, it is possible to further reduce the thickness and size. Further, of course, it is also possible to use a monolithic element which is an element in which the magnetic binder is formed in the same j as the magnetic field of the magnetic field applying means, in the measuring apparatus according to the above-described first to eighth embodiments. Furthermore, it is possible to further reduce the thickness and size of the film by making a magnetic thin film 26 201229525 compared to (4). ,. . Further, in the above-described power measuring device, the field sensing sensation may be utilized by using a magnetic field sensing benefit, and the upper field MH includes: a magnetic power supply portion formed on the substrate, having an input for supplying a component current to the magnetic film ^The wheel terminal; and (4) the electrode portion, the output of the magnetic film is read and tested, and the wiring pattern includes the same conductor layer as the power supply portion and the detecting electrode portion. According to the above configuration, in addition to the configuration of the usual circuit board, only the pattern of the magnetic thin film can be formed, and therefore, it can be formed extremely easily. Further, in the above electric power measuring device, it is preferable to use a magnetic film in such a manner that the magnetic resistance is symmetrical with respect to the supply direction of 70 pieces of current. Here, a structure in which the magnetic resistance is symmetrical can be obtained by a magnetic thin film pattern having the same resistance value and the same shape. According to the above configuration, the magnetic thin film is formed so that the magnetic resistance is symmetrical with respect to the direction of the element current. Therefore, the maximum value of the sensor output Vmr can be obtained largely, and the S/N ratio of the system can be improved. Further, the power measuring device may include a capacitor connected in parallel to the detecting portion. According to the above configuration, the Vmr signal is smoothed by the capacitor. Thus, the DC component can be extracted for a short period of time in a short period of time, so that the power value can be obtained at a high speed, and the DC component can be easily performed by a simple circuit. Detection. Further, using the above-described electric power measuring device, the element current is supplied to the pattern 27 of the magnetic thin film in a manner that the magnetoresistance is symmetrical with respect to the direction of the element current, and the step of generating the output due to the supply of the above element current is performed in the step of the pattern 27 201229525 πυυ^νρίί The DC component is extracted and set as power information. According to the above configuration, the measurement can be simply performed without additionally measuring the power factor, and the error is also reduced as compared with the case of multiplication. Further, the magnetic field sensor may further include: a magnetic thin film; a power supply portion having an input/output terminal for supplying a component current to the magnetic thin film; and a detecting portion 'the magnetic thin film in a direction orthogonal to a supply direction of the element current ( The voltage between the ends is detected to form a magnetic thin film in such a manner that the magnetic resistance is symmetrical with respect to the direction of the element current. According to the above configuration, the output film extraction direction of the magnetic thin film is set to be orthogonal to the element current direction, and the magnetic thin film is formed so that the magnetic resistance is symmetrical with respect to the direction of the element current, whereby The forward riding shape, and when the (four) field is not applied, the offset disappears, so 'the circuit configuration can be simplified. Therefore, in the case where the pattern of the magnetic film is in the direction of the supply direction of the above-mentioned element====the thin (9) portion, it is preferable to use a ferromagnetic bond (Embodiment 9). The phase is used as a magnetic film. Furthermore, in the above embodiment, the magnetic field sensor includes a curved coating and a magnetic % sensor for performing 臈, but is not limited to the meander shape: the magnetic thinness of the shape pattern, An example other than the meander shape pattern 28 201229525 will be described. As shown in Fig. 22 to Fig. 24, the present embodiment is characterized in that a supplementary magnetic pattern of a ferromagnetic thin film is formed along the inner circumference of the ring of the magnetic thin film 3 as a circular internal magnetic film having a similar shape. The film 3 is configured to have the above-described auxiliary pattern 4 with the magnetic field sense described above in the description of the first embodiment. The other configuration is the same as that of the first embodiment, and the description thereof is omitted. Attach the same symbol to the same part. Here, Fig. 22 is a schematic explanatory view of the above-described magnetic field sensor, Fig. 23 is a top view, and Fig. 24 is a cross-sectional view. The magnetic field sensor is basically the same as the example shown in Fig. 1. However, since the auxiliary pattern 4 is present, the magnetic sensitivity is improved in a state where the electric resistance is improved. Since the outer annular pattern (3) is not in electrical contact with the internal auxiliary pattern 4, the electric resistance is the same as that of the magnetic field sensor according to the first embodiment described above, but in terms of magnetic properties, since the space portion is filled with magnetic thin defects, Therefore, more magnetic fluxes can be guided, so that high sensitivity can be achieved. As described above, according to the present embodiment, since a space is formed between the magnetic bodies, the sensitivity to the external magnetic field is lowered. Therefore, in the state where the electric resistance is improved, in order to improve the magnetic sensitivity only, the internal magnetic thin film is provided independently, and further, the high sensitivity can be further achieved. Further, as the element structure, as shown in the modification of FIG. 25, after the magnetic thin film pattern is formed, the entire substrate surface is covered with a protective insulating film 16 containing a polyimide resin, and the through hole is interposed. (also (7) 叩乜h〇le), the power supply units 5A and 5B and the detection units 5C and 5D are formed. According to the above 29 201229525 wu^ypif and providing a highly reliable structure, it is possible to prevent deterioration of the magnetic thin film magnetic field sensor. Further, the auxiliary pattern of the inside of the annular pattern may include the same ΐϋΙΐΓ, or the other (4) may be included to form the auxiliary pattern 24. The magnetic thin film containing the same material as the magnetic film is used to form the inner magnetic thinning auxiliary pattern, whereby the following magnetic field sensor can be provided, and the field sensing H is easy to manufacture, only the pattern is changed, and the sensitivity is high and reliable. "People, the Zhouxing magnetic enamel film does not form a thin film to form an internal binding film, which is a supplementary pattern, whereby the sensitivity can be adjusted. In addition, when a plurality of magnetic field sensors are arranged in parallel, in order to make Sensitivity - thin, fine magnetic thin _ material it line adjustment, | | this, can also adjust the ambiguity line, in addition to inorganic film such as yttrium oxide film or alumina, also use polyimine resin, An organic film such as a phenol resin is used as a protective film. It is preferable to use a ferromagnetic film as a magnetic film. (Embodiment 10) Next, a description will be given of Embodiment 10 of the present invention. As shown in FIG. 27 and FIG. 28, the ferromagnetic thin film includes a square pattern 33 of a square shape, and the power supply portions 5A and 5B are provided so as to flow in a diagonal direction of the square, along with the power supply unit. In the present embodiment, only the square annular pattern 33 is formed instead of the annular pattern 3 of the magnetic field sensor of the first embodiment, and the other 30 201229525 is formed in the direction in which the 5A and 5B are orthogonal to each other. The configuration is the same as that of the first embodiment, and the description thereof is omitted here. The same reference numerals are attached to the same portions. Here, 'FIG. 27 is a schematic diagram of the magnetic field sensing n'. FIG. 28 is a top view. Here, the magnetic flux density vector is The spontaneous magnetization vector m of the component and the composite vector of the measured magnetic field vector ,, when there is no external measurement magnetic field, the magnetic flux density becomes 1 in the direction of the spontaneous magnetization vector. When the measurement magnetic field is an alternating magnetic field, the measurement magnetic field is The vibration is vibrated in the vertical direction of the graph centering on the spontaneous magnetization vector. According to the above configuration, the output Vmr of the following formula can be used. However, similarly to the above, the current density vector and the magnetic flux density are made inward. The angle is set to Θ1, Θ2, the angle formed by AB and AC, and AB and AD is set to φ, and the voltage between Ac when no magnetic field is measured is set to VAC0, and the voltage between AD is set. VAD() sets the maximum value of the voltage change caused by the magnetoresistance effect to AVR. 31 201229525. Huu^ypif = {VAC0 +AVrcos2^l}-{yAm +AFrcos2^} = {^ϋ〇+AFrcos2<9t} -{i^lx> +AFrcos2(^ -2^)} ^ ^ (8) and when VACO = VAD.

Vmr^AVrcos^ ~AKrcos2(^, ^2φ) (9) 當290度取得最大值。Vmr^AVrcos^ ~AKrcos2(^, ^2φ) (9) When 290 degrees, the maximum value is obtained.

Vmr = AFrcos2^ ~ ΔΡ> cos2(^, ~ 90°) =AFrcos2d, - kVr 〇〇$(2^ -180°) s=A^cos2d, +Δ^ο〇δ2ή = 2A^>cos2^i (10) 對於圓形環狀即圓環狀而言，可以大致相同的式子來 表現，但於圓環狀的情形時，電流密度向量的方向合於A 至C、以及A至D之間發生變化，由於亦存在輪出^大的 φ = 45度以外的成分，因此，與正方形相比較，輸出變小’。 再者，於上述實施形態中，利用濺鍍法來形成磁性體 薄膜，但並不限定於濺鍍法，亦可藉由真空蒸鍍法或塗佈 法、浸潰法等來形成上述磁性體薄膜。 又’關於基板，除了矽等的半導體基板之外，亦可使 用藍寶石（sapphire)、玻璃、及陶究（ceramje)等的無機 系基板、或者樹脂等的有機系基板等中的任一種基板。尤 32 201229525. 佳為使用上述基板中的所謂的可撓性優異且輕薄的基板， 例如可使用與廣泛被用作印刷配線板等的塑膠薄膜 (plastic film)相同的基板。更具體而言，可利用眾所周 知的各種材料，例如聚醯亞胺、聚對苯二曱酸乙二醇酯 (Polyethylene Terephthalate，PET )、聚丙烯 (Polypropylene，PP)、以及鐵氟龍（tefl〇n)(註冊商標） 等作為，膠薄膜材質。藉由使用可撓性的基板，能夠以使 感度更1¾的方式進行配置，例如以將應測定的電線予以包 圍的方式進行配置。又’考慮到湘焊錫來進行接合，亦 可使用耐熱性高的聚酿亞胺薄膜。再者，基板的厚度並無 特別的限定’但厚度較佳為Ιμιη〜300 μηι左右。 、碉丞板專的基板上直接形成磁性體薄 膜圖案，從而形成磁場感㈣，但亦 *r：T^r(wireb〇nd- =板7^=’將上述晶片安裝於玻璃基板或印刷配 2 曰片内亦包含且集成有處理電路，藉此， 可提供精度更〶且可靠性高的磁場感測器。 輸出=方於上述實施形態’只要將磁性薄膜的 輸出抽出方向_與元件電流的供給方向正 且以使雜㈣於元件電_方向呈對 述磁性細’概_用，由於可對方向的正冑判成^ 該磁場感測器使用有強磁性薄膜，但並測:可 33 201229525. 使用其他磁場感測器。 又，自高感度化的方面考慮，較佳為以使磁化方向與 上述元件電流的方向一致的方式而形成強磁性薄膜。 如以上的說明所述，根據本發明的磁場感測器，可高 精度地對磁場強度進行檢測’因此，可適用於電流感測器 或電力感測器等。 又，根據本發明的電力測量裝置，即便當功率因數並 非為1時，或者即便負載含有諧波電流，亦可正確地對電 力進行測量’與使用有比流器（current transf〇rmer)等的 電流感測器的先如的電力測量裝置相比較，可實現小型 化、及低成本化，因此，可適用於各種節能工具（energy saving tool)。 【圖式簡單說明】 本發明的目的以及特徵根據與如下所述_圖一· 予的後述的較佳實例的說明而變得明確。 圖1是本發明的電力測量裝置的原理說明圖。 圖2是上述電力測量I置的等效電路圖。 Γ:上4=測量裝置的等效電路的要部說明圖。 一圖^、4B疋表不比較例的說明圖， 不使用有單電阻的情形的圖，圖二。 電路的情形的圖。 疋表示使用有半電杉 圖5疋表示磁化方向的說明圖。 圖6A以及圖6B是磁電阻效 圖—相對“為。έ 34 201229525 ^磁場時與存在θ $ 9〇度的偏磁場時的測量電流的說明 圖8是表示上述電力測量裝置中的測 的關係關。 U阻值 件幹述電力測量裝置中的測量磁場強度與元 仵W出電壓的關係的圖。 圖 圖。 圖10是本發_實施職i的電相量裝置的頂視 圖η是本發明的實施形態i的電力測量裝置的剖面 _圖12是本發明的實施形態1的電力測量裝置的磁場感 測器的磁性薄臈圖案的要部放大圖。 明圖 圖13是表示用以對本發明的實施形態〗的電力 置的磁場感測11的元件特性進行測定的測定裝置的電路^ 本發明的實施形態1的電力測量裝置的磁 %感測器的要部剖面的圖。 圖15Α、15Β革主_ 2 县磁媼鴻、目彳圖其中圖15Α疋概要剖面圖，圖15Β 疋磁域·的局部_概要圖。Vmr = AFrcos2^ ~ ΔΡ> cos2(^, ~ 90°) =AFrcos2d, - kVr 〇〇$(2^ -180°) s=A^cos2d, +Δ^ο〇δ2ή = 2A^>cos2^i (10) For a circular ring shape, that is, a ring shape, it can be expressed in substantially the same formula, but in the case of a ring shape, the direction of the current density vector is combined between A to C and A to D. There is a change, and since there is a component other than φ = 45 degrees which is large, the output becomes smaller as compared with the square. Further, in the above embodiment, the magnetic thin film is formed by a sputtering method, but the present invention is not limited to the sputtering method, and the magnetic body may be formed by a vacuum deposition method, a coating method, a dipping method, or the like. film. Further, the substrate may be any one of an inorganic substrate such as sapphire, glass, or ceramje, or an organic substrate such as a resin, in addition to a semiconductor substrate such as ruthenium. In particular, it is preferable to use a substrate which is excellent in flexibility and light in thickness in the above-mentioned substrate, and for example, a substrate similar to a plastic film widely used as a printed wiring board or the like can be used. More specifically, various materials well known, such as polyimine, polyethylene terephthalate (PET), polypropylene (PP), and Teflon (tefl〇) can be utilized. n) (registered trademark), etc., as a film material. By using a flexible substrate, it is possible to arrange the sensitivity so as to be more than 13⁄4, for example, to arrange the electric wires to be measured. Further, it is also possible to use a heat-resistant polyimide intermediate film in consideration of bonding of tin solder. Further, the thickness of the substrate is not particularly limited, but the thickness is preferably about ιμηη to 300 μηι. The magnetic thin film pattern is directly formed on the substrate of the enamel plate to form a magnetic field feeling (4), but also *r:T^r (wireb〇nd-=plate 7^=', the wafer is mounted on the glass substrate or printed 2 The processing circuit is also included in the cymbal, which provides a more accurate and reliable magnetic field sensor. Output = square in the above embodiment 'as long as the output of the magnetic film is pulled out _ and the component current The supply direction is positive so that the impurity (4) is in the direction of the element's electric_direction, and the magnetic direction of the element is used. Since the direction can be positively determined, the magnetic field sensor uses a ferromagnetic film, but it can be measured: 33 201229525. Other magnetic field sensors are used. Further, from the viewpoint of high sensitivity, it is preferable to form a ferromagnetic thin film so that the magnetization direction coincides with the direction of the element current. As described above, according to the above description, The magnetic field sensor of the present invention can detect the magnetic field strength with high precision. Therefore, it can be applied to a current sensor or a power sensor, etc. Further, the power measuring device according to the present invention, even when the power factor is not 1 Or, even if the load contains a harmonic current, the power can be measured correctly. Compared with a power measuring device using a current sensor such as a current transducer, it is possible to achieve miniaturization. Since it is cost-effective, it can be applied to various energy saving tools. [Brief Description of the Drawings] The objects and features of the present invention are based on the following description of preferred examples of the following description. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory diagram of the principle of the power measuring device of the present invention. Fig. 2 is an equivalent circuit diagram of the above-described power measuring I. Γ: upper 4 = explanatory diagram of the essential part of the equivalent circuit of the measuring device. Figs. 4 and 4B show an explanatory diagram of a non-comparative example, a diagram in which a single resistor is not used, Fig. 2 is a diagram of a case of a circuit, and 疋 shows an explanatory diagram in which a magnetization direction is indicated by a semi-electric cedar diagram. 6A and FIG. 6B are diagrams of the magnetoresistance effect-relative "Yes. 2012 34 201229525 ^The measurement current when there is a bias magnetic field of θ $ 9 磁场 in the magnetic field. FIG. 8 is a diagram showing the relationship between the measurement in the above-described electric power measuring device. U The value is a diagram illustrating the relationship between the measured magnetic field strength and the voltage of the element 仵W in the power measuring device. FIG. 10 is a top view η of the electric phasor device of the present invention, which is an embodiment of the present invention. FIG. 12 is an enlarged view of an essential part of a magnetic thin-film pattern of a magnetic field sensor of the electric power measuring device according to Embodiment 1 of the present invention. FIG. 13 is a view showing an embodiment of the present invention. The circuit of the measuring device for measuring the element characteristics of the magnetic field sensing 11 of the electric power device ^ The main portion of the magnetic component sensor of the electric power measuring device according to the first embodiment of the present invention. Fig. 15 Α, 15 2 County magnetic 媪 、, 目彳 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图

圖ΜΑ、16Β是矣_ L 裝置的磁_配置的^本發明的實施形態3的電力測量 磁場感測器的剖面圖圖’其中圖⑽是頂視圖，圖脱是 圖17A、17B暴主_ &表示本發明的實施形態4的電力測量 35 201229525 • W〆〆 裝置的磁鐵的配置的圖，其中圖17A是頂視圖，圖17B是 磁場感測器的剖面圖。 圖18A、18B是表示本發明的實施形態5的電力測量 裝置的磁鐵的配置的圖，其中圖18A是頂視圖，圖18B是 磁場感測器的剖面圖。 圖19A、19B是表示本發明的實施形態6的電力測量 裝置的磁鐵的配置的圖，其中圖19A是頂視圖，圖19B是 磁場感測器的剖面圖。 圖20A、20B是表示本發明的實施形態7的電力測量 裝置的磁鐵的配置的圖，其中圖20A是頂視圖，圖20B是 磁場感測器的剖面圖。 圖21A、21B是表示本發明的實施形態8的電力測量 裝置的磁鐵的配置的圖’其中圖21A是頂視圖，圖21B是 磁場感測器的剖面圖。 圖22是本發明的實施形態9的電力測量裝置的磁場感 測器的原理說明圖。 圖23是本發明的實施形態9的電力測量裝置的磁場感 測器的頂視圖。 圖24是本發明的實施形態9的電力測量裝置的磁場感 測器的剖面圖。 〜 圖2 5是本發明的實施形態9的電力測量裝置的磁場咸 測器的剖面圖。 ~ Μ ί,26是表林發明的實_態9的電力測量裝置的磁 场感剩器的變形例的圖。 36 201229525. 圖27是本發明的實施形態10的電力測量裝置的磁場 感測器的原理說明圖。 圖28是本發明的實施形態10的電力測量裝置的磁場 感測器的頂視圖。 【主要元件符號說明】 1 :基板 1G :基板/玻璃基板 2 :絕緣膜 3 :(強）磁性薄膜/磁性薄膜 4、24 :輔助圖案 5A、5B、A、B :供電部 5C、5D、C、D :檢測部 6 :磁鐵元件/第2磁性薄膜 6a、6b :第2磁性薄膜 10A〜10D :焊墊 11 :保護膜 16 :保護絕緣膜 33 :環狀圖案 100 :磁場感測/磁場感測器晶片 200 :導體 210 ··磁軛 300 :磁鐵 500 :外殼 501 :磁場感測器 37 201229525. 502 :放大器 503 :穩定化電源 504 :示波器 505 :電阻 506 :變壓器 507、P :交流電源 ΒΜ0 :磁束密度向量 Η:測量磁場向量 Hb :偏磁場/箭頭 Hex :測量磁場 i .電流 11 :電流/一次導體 12 :元件電流 J :磁化/磁化向量/磁化方向 L :長度/負載 Μ:自發磁化向量 R :電阻/物質固有的值 R0 :固定電阻 R1〜R4 :電橋成分/電阻成分FIG. 16A is a cross-sectional view of the power measuring magnetic field sensor of the third embodiment of the present invention. FIG. & shows power measurement of the fourth embodiment of the present invention. 2012 20122525. Fig. 17A is a top view, and Fig. 17B is a cross-sectional view of the magnetic field sensor. 18A and 18B are views showing the arrangement of magnets of the electric power measuring device according to Embodiment 5 of the present invention, wherein Fig. 18A is a top view, and Fig. 18B is a cross-sectional view of the magnetic field sensor. 19A and 19B are views showing the arrangement of magnets of the electric power measuring device according to Embodiment 6 of the present invention, wherein Fig. 19A is a top view, and Fig. 19B is a cross-sectional view of the magnetic field sensor. 20A and 20B are views showing the arrangement of magnets of the electric power measuring device according to Embodiment 7 of the present invention, wherein Fig. 20A is a top view, and Fig. 20B is a cross-sectional view of the magnetic field sensor. 21A and 21B are views showing a configuration of a magnet of the power measuring device according to Embodiment 8 of the present invention. FIG. 21A is a top view, and FIG. 21B is a cross-sectional view of the magnetic field sensor. Fig. 22 is a schematic explanatory diagram of a magnetic field sensor of the electric power measuring device according to Embodiment 9 of the present invention. Fig. 23 is a top plan view showing a magnetic field sensor of the electric power measuring device according to Embodiment 9 of the present invention. Fig. 24 is a cross-sectional view showing a magnetic field sensor of the electric power measuring device according to Embodiment 9 of the present invention. Fig. 25 is a cross-sectional view showing a magnetic field salt detector of the electric power measuring device according to the ninth embodiment of the present invention. ~ ί ί, 26 is a diagram showing a modification of the magnetic field sensor of the power measuring device of the real state of the invention. Fig. 27 is a schematic explanatory diagram of a magnetic field sensor of the electric power measuring device according to Embodiment 10 of the present invention. Fig. 28 is a top plan view showing a magnetic field sensor of the electric power measuring device according to Embodiment 10 of the present invention. [Description of main component symbols] 1 : Substrate 1G : Substrate / Glass substrate 2 : Insulating film 3 : (Strong) magnetic film / Magnetic film 4, 24 : Auxiliary patterns 5A, 5B, A, B: Power supply portions 5C, 5D, C D: detection unit 6: magnet element/second magnetic film 6a, 6b: second magnetic film 10A to 10D: pad 11: protective film 16: protective insulating film 33: annular pattern 100: magnetic field sensing/magnetic field feeling Detector chip 200: conductor 210 · yoke 300: magnet 500: housing 501: magnetic field sensor 37 201229525. 502: amplifier 503: stabilized power supply 504: oscilloscope 505: resistor 506: transformer 507, P: AC power ΒΜ0 : Magnetic flux density vector Η: Measurement magnetic field vector Hb: Magnetic field/arrow Hex: Measurement magnetic field i. Current 11: Current/primary conductor 12: Component current J: Magnetization/magnetization vector/magnetization direction L: Length/load Μ: Spontaneous magnetization Vector R: resistance/material inherent value R0: fixed resistance R1 to R4: bridge component / resistance component

Rml〜Rm4 :曲流圖案 VCD :電壓Rml~Rm4: meandering pattern VCD: voltage

Vmr :感測器輸出 W :寬度 X1-X1 :剖面 Θ1、Θ2、φ :角 38Vmr : sensor output W : width X1-X1 : section Θ1, Θ2, φ: angle 38

Claims (1)

201229525 -TW^/^pif 七、申請專利範圍： h —種電力測量裝置，是包括磁場感測器的電力測旦 裝置’該磁場感測器包括： 里 磁性薄膜，以與流動有電流的一次導體呈平行的方式 配置， 供電部’具有電流輸入輸出端子，該電流輸入輪出端 S連上述一次導體，且將元件電流供給至上述磁性薄 檢測部，對上述磁性薄膜兩端的輸出進行檢測， 上述磁性薄膜是由採用電橋構造的第i磁性 第4磁性體成分所構成，且 刀 上述電力測量裝置還包括電壓輸入輸出端子，該 輸入輸出端子連接於上述電流輸入輸出端子 = 且構成上述檢測部。 立置’ 2. 如申請專利範圍第1項所述之電力測量裝置，包括 θ磁場施加單元’該磁場施加單元沿著-個料將^ 磁％施加於上述磁性薄膜。 爪 3. 如申請專利範圍第2項所述之電力測量裝置 上述磁場施加單元沿著與由上述一次磁 大致正交財向，_場絲社述魏_的磁场 4. 如申請專利範圍第i項至第3項中任 力測量裝置，其中 哨尸/T迎之電 上述磁性薄膜的採用電橋構造的第i磁性體 4磁性體成分分別由曲流形狀圖案所構成。 刀第 39 201229525. 5·如申凊專利範圍第4項所述之電力測量裝置，其中 、上述採用電橋構造的第i磁性體成分至第4磁性體成 分的各個區_長度方向與相_區間的長度方向所成的 角為90°。 6.如申晴專利範圍第2項或第3項所述之電力測量裝 置，其中 上述磁場施加單元為磁鐵。 7. 如申請專利範圍第6項所述之電力測量裝置’其中 口上述磁鐵是由一對磁鐵元件所構成，該一對磁鐵元件 是以形成與上述磁場感測器大致呈平行的磁場的方式配 置於上述磁性薄獏的兩側。 8. 如申請專利範圍第6項所述之電力測量裝置，其中 上述磁鐵是由與上述磁性薄膜面呈平行地配置的一個 磁鐵元件所構成。201229525 -TW^/^pif VII. Patent application scope: h - a kind of electric power measuring device, which is a power measuring device including a magnetic field sensor. The magnetic field sensor includes: a magnetic film in which a current flows with the current The conductors are arranged in parallel, and the power supply unit has a current input/output terminal, the current input wheel output terminal S is connected to the primary conductor, and a component current is supplied to the magnetic thin detecting portion to detect an output of both ends of the magnetic film. The magnetic thin film is composed of an i-th magnetic fourth magnetic component having a bridge structure, and the electric power measuring device further includes a voltage input/output terminal, and the input/output terminal is connected to the current input/output terminal = and constitutes the detection. unit. 2. The power measuring device according to claim 1, comprising a θ magnetic field applying unit, wherein the magnetic field applying unit applies magnetic % to the magnetic film along a material. Claw 3. The power measuring device according to claim 2, wherein the magnetic field applying unit is substantially orthogonal to the magnetic field by the primary magnetic field, and the magnetic field of the field is 4. In the third aspect of the present invention, the magnetic component of the ith magnetic body 4 having the bridge structure of the magnetic film of the stern body is composed of a meander shape pattern. The electric power measuring device according to the fourth aspect of the invention, wherein the irth magnetic component to the fourth magnetic component of the bridge structure are _length direction and phase _ The angle formed by the length direction of the section is 90°. 6. The power measuring device of claim 2, wherein the magnetic field applying unit is a magnet. 7. The power measuring device according to claim 6, wherein the magnet is formed by a pair of magnet elements, and the pair of magnet elements are formed by a magnetic field substantially parallel to the magnetic field sensor. It is disposed on both sides of the above magnetic thin crucible. 8. The electric power measuring device according to claim 6, wherein the magnet is constituted by a magnet element disposed in parallel with the surface of the magnetic film. 中 9·如申請專利範圍第8項所述之電力測量裝置，包括 聚磁。卩，配置於磁極附近，上述磁極位於與上述磁性 膜面呈平行地配置的磁鐵元件的兩端。 10,如申請專利範圍第8項所述之電力測量裝置，其 、上述磁鐵包括一對磁鐵元件，該一對磁鐵元件是以與 上过磁f生薄膜形成面呈平行且夹持著上述磁性薄膜的方式 中 11·如申請專利範圍第1〇項所述之電力測量裝置其 201229525 ^上t對磁鐵元件的關磁極之間具有聚磁部。 .》％專利範圍第6項所述之電力測量裝置，還 =抽出部，壓抽出部形成於與上 入於屮ΐ錢壓抽出部將上述磁場感測11的電壓輸 入輸出编子而來的電壓予以抽出。 雷二=請，圍第1項至第3項中任-項所述之 電力測里裝置，其中 上述一次導體是以與上述磁性薄膜呈平行的 置， # ω ί^上述_人‘體與上述磁性薄膜的中心的面與上述 磁性薄膜面垂直。 中I4·如申印專利範圍第6項所述之電力測量裝置，其 上述磁場感測器形成於與上述磁場施加單元相同 板上。 中 如申叫專利範圍第14項所述之電力測量裝置，其 構成上述磁場感测器的磁性薄膜形成於上述基板上， j磁場施加單元包括第2磁性薄膜，該第2磁性薄 上與上34雜—呈平行的方式而形成於上述基板 上述第2磁性薄膜位於比上述磁性薄膜的外緣更靠外 侧處。 16.如申請專利範圍第15項所述之電力測量裝置，其 201229525 中 —上述磁場施加單元包括形成於上述基板上的第3磁性 溥膜’ 上述第3磁性薄膜與上述第2磁性薄膜構成為隔著絕 緣膜而夾持著上述磁性薄膜。 中I7.如申請專利範圍第1項所述之電力測量裝置，其 上述磁性薄膜形成於上述基板上。 Μ· 一種電力測量方法，包括： 電：G請專利範圍第1項至第3項中任-項所述之 以使磁阻相對於元件電流的方向呈對稱的方式，藉由 ^述電流輸人如端子來將元件錢供給至雖薄膜^圖 案的步驟， 藉由上述電壓輸入輪出端子來將因供給上述元件 而產生的輪出的直流成分予以抽出，且作為電力資訊。L 429. The power measuring device according to item 8 of the patent application, comprising a magnetism. The crucible is disposed in the vicinity of the magnetic pole, and the magnetic pole is located at both ends of the magnet element disposed in parallel with the magnetic film surface. 10. The power measuring device according to claim 8, wherein the magnet comprises a pair of magnet elements, the pair of magnet elements being parallel to the surface formed by the upper magnetic film and sandwiching the magnetic body In the method of the thin film, the power measuring device according to the first aspect of the invention has a magnetic fluxing portion between the magnetic poles of the magnet elements. The power measuring device according to the sixth aspect of the invention, wherein the voltage measuring device is formed, and the pressure extracting portion is formed by inputting and outputting the voltage of the magnetic field sensing 11 into the output of the magnetic field sensing portion 11 The voltage is extracted. The power measuring device according to any one of the preceding claims, wherein the primary conductor is parallel to the magnetic film, #ω ί^ the above-mentioned body The surface of the center of the magnetic film is perpendicular to the surface of the magnetic film. The electric power measuring device according to the sixth aspect of the invention, wherein the magnetic field sensor is formed on the same plate as the magnetic field applying unit. The power measuring device according to claim 14, wherein the magnetic film constituting the magnetic field sensor is formed on the substrate, and the magnetic field applying unit comprises a second magnetic film, the second magnetic thin upper and upper The first magnetic film is formed on the substrate so as to be parallel to the outer edge of the magnetic film. 16. The power measuring device according to claim 15, wherein the magnetic field applying unit includes a third magnetic ruthenium film formed on the substrate. The third magnetic thin film and the second magnetic thin film are configured as The magnetic thin film is sandwiched between the insulating films. The power measuring device according to claim 1, wherein the magnetic thin film is formed on the substrate. Μ· A method of measuring power, including: Electricity: G. Please refer to any of the items in items 1 to 3 of the patent range to make the magnetoresistance symmetrical with respect to the direction of the component current. If a terminal supplies the component money to the film pattern, the DC input component generated by the supply of the component is extracted by the voltage input terminal, and is used as power information. L 42
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