201227872 六、發明說明： 【發明所屬之技術領域】 本發明係錢於—種金屬導線結構及其製造方法，尤指 不僅能同時兼顧硕魏層之需求，並能有相當之可 订性與衣軸容性，_係指金屬銀導線結構及其製造方法。 【先前技術】 在日益微社製求下，縣之_糾現以下製程 上、電性上與材料選擇上之瓶頸： 甩|·生上·虽導線尺度日益減少，惟作為阻障層抓） 之厚度卻是不變，相對銅之部分比例減少，阻值相對提高，因 而失去低阻值優勢。 製私上.當導線尺度曰益減少，惟作為阻障層（Ta/TaN) 之厚度卻是不變，相對銅晶種層之製程條件相對嚴苛，以目前 物理氣相沉積法（Physical Vapor Deposition，PVD )製作晶種層 表面被覆性（Step Coverage)差，已無法滿足需求，相對地造 成後續電鑛結果之失敗，例如產生孔洞等。 材料選擇上：一些新之擴散阻障層製程技術像 ALD-TaN、ALD-Ru或CVD-Ru等’除了阻值高外，阻障效果 也不佳’即使採用’還係需要搭配極薄之晶種層，因此被覆性 不佳之問題仍然存在。另有研發新之電鍍促進層，即使在被覆 不佳之情形下，由於底下先鏡有一層電鑛促進層（Cvd-Co, AMAT )’故可使得電鍍得以成功；惟其仍然需要極薄之晶種 層PVD ’因此在極小孔洞之製程下’還係會面臨到極大挑戰。 除上述問題外’以熱方式來產生不互溶偏析之方法 201227872 (Cu-Mn、〇!·〇·)’著重在擴散轉層之形成，_㈣質⑽， 〇*)將造成導線高阻值來源與可靠性不佳之結果，進而導致阻 障效果也不佳。 此外，利用原子層沉積法（Atomic Layer Dep^^，⑽) 搭配PVD製作雙晶種層，在小尺寸_時會有_ ;無電錢 技術製備晶觀，職麟尚未成熟，_性與附著性以及可 靠度測試多有問題。201227872 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a metal wire structure and a manufacturing method thereof, and in particular, not only can the requirements of the master layer be simultaneously considered, but also has considerable orderability and clothing. Shaft capacitive, _ refers to the metal silver wire structure and its manufacturing method. [Prior Art] Under the increasingly micro-system requirements, the county's _ to correct the bottlenecks in the following processes, electrical and material selection: 甩 | · Health · Although the wire scale is decreasing, but as a barrier layer) The thickness is constant, the proportion of copper is reduced, and the resistance is relatively increased, thus losing the advantage of low resistance. In the private sector, when the wire scale benefits are reduced, the thickness of the barrier layer (Ta/TaN) is constant, and the process conditions relative to the copper seed layer are relatively harsh. The current physical vapor deposition method (Physical Vapor) Deposition, PVD) The surface coverage of the seed layer is poor, which can not meet the demand, and relatively causes the failure of the subsequent electric ore results, such as the generation of holes. Material selection: Some new diffusion barrier process technologies like ALD-TaN, ALD-Ru or CVD-Ru, etc., except for high resistance, the barrier effect is not good, even if it is used, it needs to be matched with very thin The seed layer, so the problem of poor coverage still exists. In addition, a new plating promotion layer has been developed. Even in the case of poor coating, since the underlying mirror has a layer of electric ore promoting layer (Cvd-Co, AMAT), the plating can be successful; however, it still requires extremely thin seed crystals. The layer PVD 'so it will also face great challenges under the process of very small holes. In addition to the above problems, the method of generating non-dissolvable segregation by heat is 201227872 (Cu-Mn, 〇!·〇·)' focuses on the formation of diffusion transition layer, _(four) quality (10), 〇*) will cause high resistance source of wire As a result of poor reliability, the barrier effect is not good. In addition, the Atomic Layer Dep^^, (10) combined with PVD to produce a double seed layer, there will be _ in small size _; no crystal money to prepare crystal view, job lining is not yet mature, _ sex and adhesion And reliability testing is more problematic.
在美國已發表專利腿36707中（如第工⑽所示），係 宣告以雙層晶種層結構來製備金屬導線，且電鍍金屬可以係銅 或銀，其阻障層i ；L 8與晶種層工2 6、工2 8利用p⑹加 (Chemical Vapor Deposition, CVD) 電鍍濕製程方式製作，材㈣冬糾，在美國已發表專 7刪嶋中（如第U圖所示），係宣告在擴散阻障層3 〇a上，以貴重金屬當作晶種層3 2，晶種材料為釘（Ru)、 銥㈤或姥（Rh)，並利用氫/氮（H2/N2)電毁處理表面，形 成抗氧化層3 4，且僅有極微量雜質殘留。 由於銅相對擴散能力可較銀活耀，因此過去在銅製程研 究上’擴散阻障層之研究開發係重點，而晶種層之應用則一直 係鋼，沒有太大改變。惟製程技術之微縮化，如何選擇;_個人 適之新金屬導線養，除了必須考慮本紅難符合要求之夕口卜 (低電阻)’在與其搭配之相關功能材料之特性也有相當嚴格 之要未。#鑑於目祕導線技術尚屬開發階段，_技術發展 成熟度與糊佈狀祕枝料，故，—般如者係料符 2用者於實際使糾之所需，實有·並突破現有製程技術 缺點之必要。 201227872 【發明内容】 本，明之主要目的係在於，克服習知技藝所遭遇之上述 :題亚提供—種不僅能同時兼顧不同功能層之需求，益能有相 田之可订性與製軸雜之金屬料線結構及雜造方法。 本發明之次要目的縣於，為銀製程麵導線製作提供 :種整體之解財法，魏細种可行、低成本及可快速製 矛=真入技♦紐為出發點’尋找適當之魏晶種層來製備In the United States has published patent leg 36707 (as shown in the work (10)), it is announced to prepare a metal wire with a two-layer seed layer structure, and the plating metal can be copper or silver, and its barrier layer i; L 8 and crystal The layering work 2 6 and the work 2 8 are produced by the p (6) plus (Chemical Vapor Deposition, CVD) electroplating wet process, and the material (4) winter correction, which has been published in the United States (as shown in Figure U), is announced in On the diffusion barrier layer 3 〇a, the precious metal is used as the seed layer 3 2 , and the seed material is nail (Ru), 铱 (5) or 姥 (Rh), and is treated by hydrogen/nitrogen (H2/N2) electrolysis. On the surface, an oxidation resistant layer 34 is formed, and only a very small amount of impurities remain. Since the relative diffusion capacity of copper can be more vivid than silver, in the past, the research and development of the diffusion barrier layer was the focus of the copper process research, and the application of the seed layer has been steel, which has not changed much. However, the miniaturization of process technology, how to choose; _ personally suitable for new metal wire, in addition to having to consider the red meet the requirements of the evening (low resistance), the characteristics of the functional materials associated with it are also very strict not. #In view of the secret wire technology is still in the development stage, _ technology development maturity and paste-like secret branch material, therefore, the general use of the material symbol 2 users in the actual need to correct the need, and break through the existing The technical shortcomings are necessary. 201227872 [Description of the Invention] The main purpose of the present invention is to overcome the above-mentioned problems encountered in the prior art: the provision of the title can not only take into account the needs of different functional layers at the same time, but also the compatibility and the axis of the phase. Metal wire structure and method of mixing. The secondary purpose of the present invention is to provide a method for the production of silver-made wire: a kind of overall solution method, Wei fine species feasible, low cost and quick spear = true entry technology ♦ New point as the starting point 'find the appropriate Wei Jing Seed layer preparation
、為達以上之目的，本發縣—種金屬導線結構及其製造 首先’選料導體製程相容性高之金屬，透過乾^❹ H控制微結構變化與表面結構及其化性，_可 巧種層與擴散阻障層使用，並為等向均勻，不僅可減二擴散 阻p早層之製作流程與成本，亦可提高元件製作速度，更相對可 使電鍵液流人空間變寬，進而大㈣少後續魏之_性 者，本發明可從製程條件精準控做質層之厚度，社有改質 層下有此晶種層兼擴散層之組合，相對可靠度高，與 = 技術相容；最後’本發蚊可結合常見之擴散轉層材料= 成複合結構’單層與雙層結構，進缝_提高_定性盘可 【實施方式】 °月參閱第1圖〜第5圖』所示，係分別為本發明之制 錢程示意圖、本發明H關結構綠圖、本發= 二實施„意圖、本發明之第三實施例結構示意圖、及 發明之第四實施例結構示意圖。如騎示：本發明係—種金屬 201227872 導線結觀其製造綠，錄妨法輕少包含下例步驟： ,(A)提供—基底1Q ’該基底1Q包括-基板1 1及 一形成於該基板11表面之介電層12. ⑻於該平坦之介電層12上敍刻出顯露該基板工χ 表面之凹槽13; (c) m電層12上及凹槽i 3内沉積一晶種層 (Seed Layer) 2 0 ; (D )施行w/i或w/0之乾式或/及濕式表面處理，使該 ^ 晶種層2 Oa改質； (E) (Electrochemical Deposition, ECD) 施行電鐘處理，於該改質後晶種層2 〇a上形成有一較厚之金 屬層3 0並填人於該凹槽i 3内，財，該金屬層係可為銀 (Ag)或銅（Cu) ’本實施例以銀為例；以及 (F )以化學機械研磨（Chemical Mechanical Polishing CMP)對5彡金屬層3 〇施行平坦化處理，移除高㈣介電層之 金屬層3 ◦與改質後晶種層2 〇a之部分，露出該介電層i 2 馨 與該哺1 3内之金顧3 〇與改質後晶種層2 Qa，俾以完 成一金屬（銀）導線結構丄〇 〇。 上述步驟（C)晶種層2 Q射選自欽㈤、鎳⑽）、 鈷（C〇)、鶴（w)、錯㈤、鉻（CO、錄（Rh)及舒（Ru) 之金屬膜，作為鑛銀之晶種層，本實施例以鈦為例。 上述步驟（D)乾式表面處理係可為電漿處理或反 體滲透，並可為氬（Ar)、氮氫（_2)、氨（nh3)、氣（ϋ 矽烷（Silane)或含碳氣體（⑽啊她㈣牌）；濕气表面 處理係包括以氧化劑清洗或浸泡，該氧化劑並可為⑽鉀 201227872 (KMn〇3)、過氧化氫（h2o2) (DHF)〇 或脫氧化物溶液-稀釋氫氟酸In order to achieve the above objectives, the county-metal wire structure and its manufacture are the first to select the metal with high compatibility of the conductor process, and control the microstructure change and surface structure and its chemical properties through dryness, _ The seed layer and the diffusion barrier layer are used, and the isotropic is uniform, which not only reduces the fabrication process and cost of the early diffusion layer, but also improves the fabrication speed of the component, and relatively widens the space of the key fluid flow, and further Large (four) less follow-up Wei Zhi _ sex, the invention can be precisely controlled from the process conditions to the thickness of the quality layer, the combination of the seed layer and the diffusion layer under the modified layer, the relative reliability is high, and = technical phase Finally, 'this mosquito can be combined with common diffusion layer material = composite structure' single layer and double layer structure, slit _ improve _ qualitative disk can be [implementation] ° month see Figure 1 ~ 5 The drawings are respectively a schematic diagram of the manufacturing process of the present invention, a green diagram of the H-off structure of the present invention, a second embodiment of the present invention, a schematic diagram of the structure of the third embodiment of the present invention, and a fourth embodiment of the invention. Such as riding: the invention is a metal 201227872 The wire is made to be green, and the recording method is as follows: (A) provides - substrate 1Q 'The substrate 1Q includes a substrate 1 1 and a dielectric layer 12 formed on the surface of the substrate 11. (8) A recess 13 is formed on the flat dielectric layer 12 to expose the surface of the substrate; (c) a seed layer 20 is deposited on the m electrical layer 12 and in the recess i 3 ; D) performing a dry or/and wet surface treatment of w/i or w/0 to modify the seed layer 2 Oa; (E) (Electrochemical Deposition, ECD) performing an electric clock treatment after the modification A thick metal layer 30 is formed on the seed layer 2 〇a and filled in the recess i 3 . The metal layer may be silver (Ag) or copper (Cu). For example; and (F) planarizing the 5 彡 metal layer 3 以 by chemical mechanical polishing (CMP) to remove the metal layer 3 高 of the high (four) dielectric layer and the modified seed layer 2 〇 a part of a, exposing the dielectric layer i 2 馨 and the 顾 3 3 〇 and the modified seed layer 2 Qa, to complete a metal (silver) wire structure 丄〇〇. C) crystal Layer 2 Q is selected from the metal films of Chin (5), Nickel (10), Co (C), Crane (w), W (5), Chromium (CO, Rh (Rh) and Shu (Ru)). For the layer, the titanium oxide is taken as an example. The dry surface treatment of the above step (D) may be plasma treatment or reverse body penetration, and may be argon (Ar), nitrogen hydrogen (_2), ammonia (nh3), gas ( S ane S S S 或 或 或 或 或 或 或 或 或 或 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; DHF) bismuth or deoxidation solution - dilute hydrofluoric acid
、本么明為銀製程金屬導線製作提出一個整體之解決方 法’以，合材料設計與材料反應之概念，找出不僅能同時兼顧 不同功％層之需求（擴散阻障層與魏晶種層），並能有相當 之可行性與製程相容性。較單純研究單—功能層材料具多面向 優點’無需後續改良即可直接達到翻目❾。例如，可以上述 製程結合常見之擴散阻障層材料（如第4、5圖所示），例如 氮:鈦(ΤιΝ)、氮化钽(TaN)、氮化鎢(㈣)、氮化矽鈦(丁腿) 或氮化㈣（TaSiN)之金屬氮化物，利用化學氣相沉積法 (Chemical Vapor Deposition，CVD )，如原子層沉積法（恤流 Layer Deposition，ALD)沉積擴散阻障層，搭配上述製程藉此 組成複合結構’構成單層（晶種層）與雙層（擴散阻障層）結 構’可提高熱穩定性與可靠度。 經由上述製程’可獲得本發明之金屬（銀）導線結犯 〇 0 ’於-較佳實施例中，如第2圖所示，本發明金屬⑷ 導線結構1 〇 〇係包括-基底i 0，其包含一基板i i及一形 成於該基板1 1表面之介· i 2，齡謂丨2上並具有顯 露該基板11表面之凹槽i 3 ;—改質後晶種層2 〇a，係形 成於該凹槽1 3内，其包含部分晶種層2 〇及表面改質層2工 (Surface Modiflcation Layer);以及一銀層 3 〇，係形^於該 改質後晶種層2 〇a上並填入於該凹槽1 3内。 本發明除上述所提結構型態外，亦可為另一較佳實施例 之結構型態，如第3圖所示，而其所不同之處係在於，财質 後晶種層2 0a經表面處理後係全部形成為改質層22 :、 7 £ 201227872 本發明除上述所提結構型態外，亦可為另一較佳實施例 之、m如第4、5圖所示，而其所不同之處係在於，更 包括-擴散轉層2 3 ’位於該基底1 Q與該改質後晶種層2 0a之間’俾以組成複合結構。其中，該改質後晶種層2 亦可為部分晶_ 2 Q及表面改質層2 1，亦或全為改質層2 2 ° ' μ參閱弟6圖及第7圖』所示，係分別為本發明以未 表面處理之晶種層及已表面處理之晶種層與電鑛銀之接觸面 之比較示意圖、及本發明之表面處理時間與接觸角度變化示意 圖。如圖所示：本發明係可直接電鑛銀在絲處理過之晶種層 上’其接觸介面間係為連續狀。其中第6圖（a)係顯示在電 子顯微圖式上’未處理之晶種層（本發明以鈦為例）與電鍍銀 之接觸面係呈現林連續狀；第㈣⑻職示本發明 經過化學處理後鈦表面與錢雜觸_刊齡現為連續 狀。另外’由第7圖顯示利用化學方法處理鈦表面，其處理時 =與鋪聽之變切知，㈣處狀㉟觀财有效拉平欽 表面。 _請參閱『第8圖及第9 ®』所示，係分別為本發明在不. 同溫度下退讀之電阻值變化示意圖、及本發明在退火 後之縱冰分析不意圖。如圖所示：經第8圖顯示可知，本發明 ’二改貝後鈦;|膜與麵銀接觸介關，其電阻值並無太大變 化，可見本發明結構具有良好之熱穩定性。另外，由第9圖顯 π可知本結構在向溫下，係具有對銀之擴散阻障能力。 由此可知|發明係著重在為銀製程金屬導線製作提供 一個整體之解決方法（福s〇luti〇n)，從現有技術中可行、低 201227872 成本及可快速製程之填人技術_電鍍為出發點 ， 鏡晶種層來製備銀導線。主要技術係針對微結構控== 制，選擇並設計晶種層之材料。首先，選用 機 高之金屬’透過乾式製程（如電t轟擊、氮化、氧化了目=性 浸泡)’控制微結構變化與表= 同呤可自成電辦種層與_轉層 y C祕咖丨），不僅可齡槪轉層之料驗m均 亦可提高树製作速度（ThrGughput)，勤於齡—道 ίΓΓΠ?入空間變寬’進而大幅㈣^ _。再者’本發明係可從製程條件來精準控做質層之^ 度，即上有改質層下有此晶種層兼擴散層之組合，相對二二 局’與現有製程技術相容，尤其在銀製程方面，目前並未有= 似以可魏元纽合之概念提出翻，因此本發明極且創新 性。最後，本發败可結合常見之擴散轉層（如Ti、Ta、w 等氮化物）材料’組成複合結構，單層與雙層結構，以提高孰 穩定性與可靠度。 … 因此，雖然目前適當之晶種層含有舰銀，惟本發明係 開發出可直接電舰之金屬晶種I’兼具晶種層與擴散阻障層 之雙功能層’賴對_製程好辟，本發明錢同時突破 多個製程，如可製作超薄薄膜技術（CVD或ALD或濕式化學 製程）、可電鍍、薄膜覆蓋特性（Step c〇verage)、與現有製程 之相容性（Compatibility)、成本考量（c〇st)以及製作流暢性 (Throughput)等因素之考量，所構成之簡單結構及其方法。 因此’以本發明之概念在金屬銀導線製程將有可能取代銅製程 成為下世代之導線製作技術主流，進而拓展至目前3Dic之矽 201227872 穿孔（Through Silicon Via，TSV)導線製程上，足見本發明用 途之廣。 綜上所述，本發明係一種金屬導線結構及其製造方法， 可有效改善習用之種種缺點，從現有技術中可行、低成本及可 I"夬速‘私之填入技術-電鍛為出發點，尋找適告之恭奸a錄声 來製備銀導線，不僅能同時兼顧不同功能層之田需求":有才曰目 田之可行性與製程相容性，更可進一步結合常見之擴散阻障層 組成複合結構，單層與雙層結構，以提高熱穩定性與可靠度， • _使本發明之産生缺進步、更實m符合制者之所 須’破已符合發明專利申請之要件，表依法提出專利申請。 准以上所述者’僅為本發明之較佳實施例*已，當不能 以此限疋本發明貫施之範圍；故，凡依本發财請專利範圍及 發明說明書内容所作之簡單的等效變化與修飾，魏仍屬本發 明專利涵蓋之範圍内。 【圖式簡單說明】 第1圖，係本發明之製作流程示意圖。 •帛2 ® ’係本發明之第—實關結構示意圖。 第3圖，係本發明之第二實施例結構示意圖。 第4圖，係本發明之第三實施例結構示意圖。 第5圖，係本發明之第四實施例結構示意圖。 第6圖’係本發明以未表面處理之晶種層及已表面處理之 晶種層與電鍍銀之接觸面之比較示意圖。 係、本4日月之表面處理時間與接觸角度變化示意圖。 第8圖，係本發明在不同溫度下退火後之電阻值變化示意 201227872 圖。 第9圖，係本發明在600°c退火後之縱深分析示意圖。 第10圖，係習用金屬導線結構示意圖。 第11圖，係另一習用金屬導線結構示意圖。 【主要元件符號說明】 (本發明部分） 金屬（銀）導線結構10 0 基底1 0 • 基板1 1 介電層1 2 凹槽1 3 晶種層2 0、2 〇a 表面改質層2 1 改質層2 2 .擴散阻障層2 3 金屬層3 0 • (習用部分） 阻障層1 1 8 晶種層12 6、1 2 8 擴散阻障層3 〇a 晶種層3 2 抗氧化層3 4This book proposes a holistic solution for the production of silver metal wires. The concept of material design and material reaction is to find out the requirements of not only the different work layers but also the diffusion barrier layer and Wei Jing layer. ), and can have considerable feasibility and process compatibility. Compared with the simple study of the single-functional layer material, it has many advantages. It can directly achieve the turning point without subsequent improvement. For example, the above process can be combined with a common diffusion barrier material (as shown in Figures 4 and 5), such as nitrogen: titanium (ΤιΝ), tantalum nitride (TaN), tungsten nitride ((iv)), tantalum nitride Metal nitrides of (butyl) or nitrided (tetra) (TaSiN), deposited by chemical vapor deposition (CVD), such as atomic layer deposition (Layer Deposition, ALD) diffusion barrier layer, with The above process thereby constitutes a composite structure 'constituting a single layer (seed layer) and a double layer (diffusion barrier layer) structure to improve thermal stability and reliability. The metal (silver) wire of the present invention can be obtained through the above process 'in the preferred embodiment, as shown in FIG. 2, the metal (4) wire structure 1 of the present invention comprises - the substrate i 0, It comprises a substrate ii and a dielectric layer formed on the surface of the substrate 11 and having a recess i 3 on the surface of the substrate 11; the modified seed layer 2 〇a Formed in the recess 13 , which comprises a part of the seed layer 2 〇 and a surface modification layer; and a silver layer 3 〇, the system is formed after the modified seed layer 2 〇 a is filled in the groove 13. In addition to the above-mentioned structure, the present invention may also be a structural form of another preferred embodiment, as shown in FIG. 3, and the difference is that the post-financial seed layer 20a is After the surface treatment, all of them are formed into the modified layer 22 :, 7 £ 201227872 In addition to the above-mentioned structure, the present invention may be another preferred embodiment, m as shown in Figures 4 and 5, and The difference is that the diffusion-transfer layer 2 3 ' is located between the substrate 1 Q and the modified seed layer 20 a to form a composite structure. Wherein, the modified seed layer 2 may also be a partial crystal _ 2 Q and a surface modifying layer 2 1, or all of the modified layer 2 2 ° 'μ see the brother 6 and 7], It is a schematic diagram comparing the contact surface of the untreated surface seed layer and the surface-treated seed layer with the electro-mineral silver, and the surface treatment time and contact angle change of the present invention. As shown in the figure, the present invention is capable of directly electro-mineralizing silver on a silk-treated seed layer, and its contact interface is continuous. Fig. 6(a) shows that in the electron micrograph, the 'untreated seed layer (the titanium in the invention is taken as an example) and the silver-plated contact surface are continuous in the forest; the fourth (8) (8) job shows the invention. After the chemical treatment, the titanium surface and the money miscellaneous contact _ the age is now continuous. In addition, it is shown in Fig. 7 that the surface of the titanium is treated by a chemical method, and when it is processed, it is known to be cut and cut, and (4) it is effective to pull the surface of the Qin. _Please refer to "8th and 9th", which is a schematic diagram showing the change of the resistance value of the present invention at the same temperature, and the longitudinal ice analysis of the present invention after annealing. As shown in the figure, it can be seen from Fig. 8 that the second modification of the present invention has a good thermal stability. The structure of the present invention has good thermal stability. Further, it can be seen from Fig. 9 that the structure has a diffusion barrier property against silver at a temperature toward the temperature. It can be seen that the invention focuses on providing a holistic solution for the production of metal wire for silver process (Fuslulu〇n), which is feasible from the prior art, low cost of 201227872 and filling technology for rapid process_electroplating as a starting point , mirror seed layer to prepare silver wire. The main technology is to select and design the material of the seed layer for the microstructure control == system. First, select the metal of the machine's through the dry process (such as electric bombardment, nitriding, oxidizing the target = sexual immersion) 'control the microstructure change and the table = the same can be self-generated to the seed layer and _ transfer layer y C The secret curry), not only can the age of the 槪 槪 槪 均 can also improve the tree production speed (ThrGughput), diligent age - road ΓΓΠ ΓΓΠ 入 入 入 空间 入 入 入 入 入 大幅 大幅 大幅 大幅 大幅 大幅 大幅 大幅 大幅 大幅 大幅Furthermore, the invention can precisely control the quality of the layer from the process conditions, that is, the combination of the seed layer and the diffusion layer on the modified layer, and the second and second boards are compatible with the existing process technology. Especially in the silver process, there is no such thing as = can be proposed by the concept of Wei Yuan, so the invention is extremely innovative. Finally, the failure can be combined with the common diffusion layer (such as Ti, Ta, w and other nitrides) material to form a composite structure, single layer and double layer structure to improve the stability and reliability of the crucible. ... Therefore, although the current suitable seed layer contains ship silver, the present invention develops a dual-functional layer of a metal seed crystal I' which has a direct electric ship and a seed layer and a diffusion barrier layer. The invention can break through multiple processes at the same time, such as making ultra-thin film technology (CVD or ALD or wet chemical processes), electroplating, film covering properties (Step c〇verage), compatibility with existing processes ( The simple structure and method of the consideration of factors such as cost, cost, and throughput. Therefore, the concept of the present invention in the metal silver wire process will likely replace the copper process to become the mainstream of the next generation of wire fabrication technology, and then extended to the current 3Dic after the 201227872 through silicon (TSV) wire process, which shows the invention Wide range of uses. In summary, the present invention is a metal wire structure and a manufacturing method thereof, which can effectively improve various disadvantages of the prior art, and is feasible from the prior art, low cost, and can be used as a starting point for the technology of electric filling. In order to find the silver wire, it is not only possible to take into account the needs of different functional layers. ": The feasibility and process compatibility of the talented field can be further combined with the common diffusion resistance. The barrier layer constitutes a composite structure, a single layer and a double layer structure to improve thermal stability and reliability, and _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The form filed a patent application in accordance with the law. The above description is only a preferred embodiment of the present invention, and should not be limited to the scope of the present invention; therefore, the simple scope of the patent scope and the description of the invention according to the present invention. Effect changes and modifications, Wei is still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the production process of the present invention. • 帛 2 ® ' is a schematic diagram of the first embodiment of the present invention. Figure 3 is a schematic view showing the structure of a second embodiment of the present invention. Figure 4 is a schematic view showing the structure of a third embodiment of the present invention. Figure 5 is a schematic view showing the structure of a fourth embodiment of the present invention. Fig. 6 is a schematic view showing the comparison of the seed surface of the untreated surface layer and the surface layer of the surface-treated seed crystal and the electroplated silver. The system, the surface treatment time and the contact angle change diagram of the 4th month. Figure 8 is a schematic representation of the change in resistance value after annealing at different temperatures in the present invention. Fig. 9 is a schematic view showing the depth analysis of the present invention after annealing at 600 °C. Figure 10 is a schematic view of the structure of a conventional metal wire. Figure 11 is a schematic view of another conventional metal wire structure. [Main component symbol description] (part of the invention) Metal (silver) wire structure 10 0 substrate 1 0 • substrate 1 1 dielectric layer 1 2 groove 1 3 seed layer 2 0, 2 〇a surface modification layer 2 1 Modification layer 2 2 . Diffusion barrier layer 2 3 Metal layer 3 0 • (conventional part) Barrier layer 1 1 8 Seed layer 12 6 , 1 2 8 Diffusion barrier layer 3 〇a Seed layer 3 2 Antioxidation Layer 3 4
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