201226495 六、發明說明： 【發明所屬之技術領域】 本發明涉及一種化學機械平坦化漿料，尤其涉及一種用於拋光石夕和銅 的化學機械平坦化漿料。 【先前技術】 隨著微電子技術的發展，甚大型積體電路晶片集成度已達幾十億個元 器件，特徵尺寸已經進入納(奈)米級，這就要求積體電路（IC)製造工藝中 的幾百道工序，尤其是多層佈線、襯底、介質必須要經過化學機械平坦化。 ic製造工藝中的平坦化技術已成為與光刻和刻蝕同等重要、且相互依賴的 不可缺少的關鍵技術之一。而化學機械拋光（CMp)工藝便是目前最有效、 最成熟的平坦化技術。化學機械拋光系統是集清洗、乾燥、線上檢測、終 點檢測等技術於-體的化學機械平坦化技術，是積體電路向微細化、多層 化、平坦化、薄型化發展的產物，及積體電路提高生產效率、降低成本、 晶圓全域平坦化的必備技術。 在1C製造領域中，甚大規模集成佈線的材料正由傳統的八丨向^^轉 化。與A1相比，Cu佈線具有電阻率低，抗電遷移能率高，RC延遲時間短， 可使布層數減少一半，成本降低30%，加工時間縮短4〇%的優點^ Cu佈線 的優勢已經引起全世界廣泛的關注。但是目前還沒有對銅材進行有效地等 離子(或稱魏)侧或濕法侧’以使銅互連麵體電路中充分形成的技 術，因此銅的化學機械拋光方法被認為是最有效的替代方法。 CMP在1C製造領域應用廣泛，拋光物件包括襯底、介質及互連材料 201226495 等’在ic製造中，由於多層佈線，使得矽片表面形成了不規則的形貌除 了對佈線需要進行平坦化處理外，對矽也需要進行平坦化處理，而化學機 械拋光則可以用拋光墊同時對多層佈線、襯底、介質進行平坦化處理。CMp 對於3D封裝TSV (TSV，Through -Silicon-Via，石夕通孔）技術也至關重要。 通過在晶片和晶片之間、晶圓和晶圓之間製作垂直導通，3D封裝Tsv是 實現晶片之間互連的最新技術。與以往1C封裝鍵合和使用凸點的疊加技術 不同，TSV能夠使晶片在三維方向堆疊的密度最大’外形尺寸最小，大大 地改善晶片速度和低功耗的性能。它也被稱為繼鍵合(Wire B〇nding)、ΤΑβ 和倒裝晶片（Flip-Chip，FC)之後的***封裝技術e 3D封裝的主要優勢為： 具有最小的尺寸和重量，將不同種類的技術集成到單個封裝中，用短的垂 直互連代替長的2D互連，降低寄生效應和功耗等。 目前，出現了一系列適合於拋光石夕和銅的化學機械拋光聚料，如：專 利US2〇_151252A1公開了一種用於石夕CMp的組合物和方法，能對石夕表 面的金屬歸進行選雜拋光；專利US2G_()1439()A1公開了—種用於石夕 和金屬的化學機械拋光漿料，該化學機械拋光聚料具有選擇性拋光的特 點；專利脱臟48公開了-種使用聚合體電解質的石夕⑽的方法；公 開號為⑽撕·的專利公開了一種銅的化學機械抛光工藝用抛光液， 利用緩衝溶液組成的成膜劑以及成膜助劑及磨料實現化學機械拋光工藝； 授權公告麟⑽⑼說的翻爛了 —的⑽錄製造以及 用於積體電路的製造方法’使鋼層的點姓、腐_少並獲得良好的銅互連 平面性。 授權公告麟CN歸65C的專爾公開了—_的化賴械抛光所 201226495 用的漿料，利用螯合有機酸緩衝體系及研磨劑組合成鋼拋光裝料，並且減 少了整體和局部腐蝕。 傳統的銅拋級使騎氧錢為氧_，妓魏氧倾會抑制石夕的 拋光，而且上述專利中提到關於高速銅抛光的拋光液還存在去除速率不 足的情況’或者襯絲面存在著缺陷、劃傷、財及/或其它殘留，或者是 對銅的拋光響性不夠，或者是拋光猶巾存在著騎或錢舰等問疋 題，不適於現麵電子產品的生產製缸藝流簡需要，耻有必要開發 出新的適用于高速製程的化學機械拋光漿料。 【發明内容】 本發明提供了 _麵切和靖化學賊平域^料，所狄學機械 平坦化1料實現同時高速抛祕和銅，並且控制金屬材料的局部和整體腐 蝕’減少襯底表面污染物。 本發明拋光#_化賴械平坦化絲，包括研磨麵、氧化劑、 載體、能触抑及絲®聽形越雜髓齡合細驗性拋光速率 調節劑。 本發明中的拋光矽和銅的化學機械平坦化漿料，其十，還包括所述鹼 性拋光速率調節劑為無機域(驗）、有機域(驗）、氨類化合物中的一種或幾種 的混合。 本發明中的拋光矽和銅的化學機械平坦化漿料，其中，所述拋光速率 調節劑優選為含-NH_結構的氨類化合物。 本發明中的拋光矽和銅的化學機械平坦化漿料，其中，所述鹼性抛光 速率調節劑為氫氧化鉀、氫氧化鈉、氫氧化鋰、氫氧化绝、四曱基氫氧化 胺、四乙基氫氧化胺、四丙基氫氧化胺、氨水、羥胺、乙二胺、二乙婦三 201226495 胺、羥乙基乙二胺、三乙烯四胺、多烯多胺、乙醇胺、三乙醇胺、丨24 _ 氣嗤、檸檬酸二胺、丙二胺、檸樣酸三胺、精胺、二亞乙基三胺和呢= 的一種或多種混合物。上述的拋光矽和銅的化學機械平坦化漿料，其中， 所述拋光速率調節劑在所述化學機械平坦化漿料中的質量百分含量為 0.05〜10〇/〇。 本發明中的拋光石夕和銅的化學機械平坦化漿料，其中，所述研磨顆; 為氧化矽、氧化鋁、氧化鈽、聚合物顆粒中的一種或幾種的混合。’十 本發明中的拋祕和_化學機械平坦化祕，其巾，所述研磨 在所述化學機械平坦化漿料中的質量百分含量為〇 〇5〜1〇%。 ’、 本發明中的拋光#銅的化學機械平坦化祕，其中，所述研磨顆粒 的平均粒徑為20〜200nm，優選的平均粒徑為3〇〜1〇〇nm。 本發明㈣拋光#_化學機械平坦化⑽，其巾，所述氧化 鹵素含氧酸或所述含氧酸的可溶鹽中的—種錢種的混合，如高硬酸^ 漠酸，高氯酸，碰卸，漠酸卸’氣酸卸，次硪酸鉀，次漠 = 鉀、溴酸錄等。 虱酼 本發明中的拋光化學機械平坦錄料，其巾，所述氧 所述化學機械平坦化祕中㈣量百分含量為⑽5〜ι〇%。 本發明中的拋光化學顧平坦化祕，其巾，所述化學機械 平坦化漿料還包括pH值調節劑。 本發明中的抛光#銅的化學機械平坦化漿料，其中，所述化學相 平坦化躁料PH值為8·0〜12.0，優選的PH值為9.04.0。 本發明中職光#_化學機解坦讀料，其巾，所述化學相 平坦化漿料還包括表面活性劑、穩定劑、腐姓抑制劑及/或殺菌劑。— ^發财馳光#_姆機械平坦化賴，其巾，所述載體启 離于水。 ^ 6 5 201226495 1. 本發明拋光矽和銅的化學機械平坦化漿料通過拋光體系的作用，同 時南速抛光碎和銅。 2. 本發明拋光矽和銅的化學機械平坦化漿料同時控制金屬的材料的局 部和整體腐蝕’減少機台和襯底表面污染物，提高產品良率。 3·本發明拋光石夕和銅的化學機械平坦化漿料可以調節銅/石夕選擇比，高 足不同製程對TSV拋光要求。 【實施方式】 下面通過實施例的方式進-步說明本發明，並不因此將本發明限制在 所述的實施例範圍之中。 使用前，將上述成份按特定的比例混合，各種成份間發生化學反應， 在拋光過程中升高拋光液溫度，從而大幅提高拋光液效率。 實施例1 本發明拋光#_化學平坦化漿齡要組分包括G8wt%氧化铭研磨 顆粒（平均祕lGGnm)，5wt%紐魏化劑，速率調節舰擇乙二胺四乙 酸（〇.5wt%)和1，2,4-四氮唑（O.lwt%)，將pH值調節至1〇。 實施例2 選用氧化鈽（平均粒徑200nm)作為研磨顆粒，其質量百分含量為 0.1%;速率調節劑選擇棒檬酸二胺（5wt%)和丙二胺（iwt%); 2祕漠酸 鉀作氧化劑；pH值調節至10.5 » 實施例3 選用氧化石夕（平均粒徑7〇nm)作為研磨顆粒，其質量百分含量為〇5 201226495 % ;速率調節劑選擇檸檬酸三胺（5wt°/〇)和精胺（lwt%) ; 2wt°/〇溴酸鉀作 氧化劑；pH值調節至10.6。 實施例4〜18 ’參照實施例1〜3，選用不同的研磨顆粒、速率調節劑、 和氧化劑，主要成分物質名稱和用量，見表i。 表1給出了本發明拋光矽和銅的化學機械平坦化漿料實施例丨〜18和對 比拋光液主要組分及質量百分含量，將各成分混合均勻，去離子水補足質 量百分比100%，最後用pH值調節劑（2〇%κ〇Η或稀硝酸，根據pH值的 需要進行選擇）調節到所需pH值，繼續攪拌至均勻流體，靜置3〇分鐘即 可得到各化學機械平坦化漿料。 j· 1个發明的化學機械平坦化漿料1〜18和對比液主单細公好晳暑百公冬 實施例 研磨顆4 ί 速率調節劑 氧化劑 pH值 具體物質 含量 wt% 具體物 質 含量 wt% 具體 物質 含量 Wt% 1 Al2〇3(100nm) 0.8 四甲基 氫氧化 胺 5 溴酸 鉀 5 10 1,2,4- 三氮唑 5 2 Ce〇2(200nm) 0.1 四乙基 氫氧化 胺 10 溴酸 鉀 2 10.5 丙二胺 0.05 3 Si〇2(70nm) 0.5 四丙曱 基氫氧 化胺 5 溴酸 鉀 V 2 10.6 精胺 1 4 Al2〇3(l〇〇nm) 1 乙二胺 0.5 高峨 酸 2 8 5 ---- 聚乙烯 10 三乙醇 0.5 高演 8 9 201226495 (Μη ： 20000) 胺 酸 6 聚四亂乙稀 (Μη ： 40000) 5 氨水 0.5 兩漠 酸 0.05 10 7 SiO2(20nm) 3 乙醇胺 1 尚漠 酸 0.08 10 8 SiO2(30nm) 2 二乙烯 三胺 0.5 次氣 酸鉀 0.2 10.5 9 Si〇2(80nm) 0.05 羥乙基 乙二胺 2 南漠 酸 0.5 10.6 10 SiO2(60nm) 2.5 三乙烯 四胺 1.5 次蛾 酸鉀 0.8 10.7 11 SiO2(60nm) 4 多烯多 胺 2 南氯 酸 1.8 11 12 SiO2(60nm) 1.2 檸檬酸 二胺 1 氣酸 鉀 6 12 13 Si〇2(60nm) 2 檸檬酸 二胺 1.5 氣酸 鉀 8 12 14 SiO2(60nm) 2 檸檬酸 三胺 1.2 溴酸 鉀 9 12 15 Si〇2(60nm) 2 檸檬酸 三胺 1.8 溴酸 鉀 10 13 16 SiO2(60nm) 2 檸檬酸 三胺 1 溴酸 鉀 8 10.5 17 Si〇2(60nm) 2 KOH 4 溴酸 鉀 2 10.5 0瓜唤 2 甘氨酸 1 18 聚四氟乙烯 (Μη ： 30000) 4 氨水 0.05 兩漠 酸 0.05 10 對比 Si02 3.5 擰檬酸 9 過氧 化氫 5 3 201226495 將表1中本發明的拋光液1~18和對比拋光液分別對不同材料（包括石夕 襯底、Cu襯底）進行拋光。拋光條件相同，拋光參數如下：L〇gitech拋光 塾，向下壓力3〜5psi ’轉盤轉速/拋光頭轉速=60/80rpm，拋光時間i2〇s，石夕 和銅的化學機械平坦化漿料流速l〇〇mL/mir^拋光結果見表2。 表2本發明實施例1~18和對比例的拋光效果對比 拋 光液 選擇比 Cu/Si 下壓力 (psi) 銅去除 速率 (A/min) 表面缺 陷 矽去除 速率 (A/min) 實施例 1 1:5 3 800 無 4000 實施例 2 5:1 3 8000 無 1600 實施例 3 2:1 3 8000 少 4000 實施例 4 1:1 4 8000 少 8000 實施例 5 1:1 3 9000 少 9000 實施例 6 1:2 4 8000 少 15000 實施例 7 1:1.2 5 8000 少 10000 實施例 8 1:1.2 6 12000 少 15000 實施例 9 1:1.3 3 15000 少 20000 實施例 10 1:2 4 10000 少 20000 實施例 11 1:1.2 6 12000 少 15000 實施例 12 1:1.1 6 12000 少 13000 實施例 13 1:1.2 6 12000 少 15000 10 201226495 實施例 14 1:1.5 6 10000 少 15000 實施例 15 1:1.3 6 11000 少 15000 實施例 16 1:1.2 6 12000 少 18000 實施例 17 1:1.2 6 12000 少 16000 實施例 18 1:1.2 6 12000 少 15000 對比例 — 3 8500 多 100 表1、表2中的資料表明：本發明抛光石夕和鋼的化學機械平坦化聚料中 加入拋光速率調節劑後，在拋光矽和銅的同時可以調節化學機械拋光時對 銅及矽的拋光選擇比，並控制金屬材料的局部或整體腐蝕效果。 在針對不同需要進行矽和銅的拋光時，只需調節本發明化學機械平坦 化漿料中的拋光速率調節劑的成分、質量百分含量，即能實現對不同材料 的拋光選擇比，以滿足不同制程對TSV拋光要求。 上述實施例中，還可以加入pH值調節劑、表面活性劑、穩定劑、殺菌 劑和腐辦卩侧等，錢本發鴨光朴_化學平坦化祕具有更好的 使用效果。 應田理解的是，本發明所述氨類化合物，包括含有伯胺、腫胺、叔胺 ;所述μ%均指的是質量百分含量。 以上對本發明的具體實施例進行了詳細描述，但其只是作為範例，本 發明並不限制於以上描述的具體實關。對於本領域技術人員而言，任何 對本發明進仃的㈣錢和替代也都在本發明的範 _之中。因此，在不脱 本發月的精神和細下所作的均等變換和修改，都應涵蓋在本發明的範 201226495 圍内。 【圖式簡單說明】 (無） 【主要元件符號說明】 (無） 12 5201226495 VI. Description of the Invention: [Technical Field] The present invention relates to a chemical mechanical planarizing slurry, and more particularly to a chemical mechanical planarizing slurry for polishing stone and copper. [Prior Art] With the development of microelectronics technology, the integration of very large integrated circuit chips has reached several billion components, and the feature size has entered the nanometer (n) grade, which requires the fabrication of integrated circuits (IC). Hundreds of processes in the process, especially multilayer wiring, substrates, and media must be chemically mechanically planarized. The planarization technology in the ic manufacturing process has become one of the indispensable key technologies that are as important and interdependent as lithography and etching. The chemical mechanical polishing (CMp) process is currently the most effective and mature planarization technology. The chemical mechanical polishing system is a chemical mechanical and mechanical flattening technology that combines cleaning, drying, on-line detection, and end point detection. It is a product of the development of micro-leveling, multi-layering, flattening, and thinning of integrated circuits, and integration. The circuit is necessary to improve production efficiency, reduce costs, and flatten wafers. In the field of 1C manufacturing, the material of very large integrated wiring is being transformed from the traditional gossip. Compared with A1, Cu wiring has low resistivity, high electromigration resistance, and short RC delay time, which can reduce the number of layers by half, reduce cost by 30%, and shorten processing time by 4%. Has aroused widespread concern around the world. However, there is currently no technology for effectively forming a plasma (or Wei) side or a wet side of copper to form a copper interconnect surface circuit. Therefore, the chemical mechanical polishing method of copper is considered to be the most effective alternative. method. CMP is widely used in 1C manufacturing. Polished objects include substrates, dielectrics and interconnect materials 201226495. In ic manufacturing, due to the multilayer wiring, the surface of the ruthenium is irregularly shaped except that the wiring needs to be planarized. In addition, the flattening process is also required for the tantalum, and the chemical mechanical polishing can simultaneously planarize the multilayer wiring, the substrate, and the medium with the polishing pad. CMp is also critical for 3D package TSV (TSV, Through-Silicon-Via) technology. The 3D package Tsv is the latest technology for interconnecting wafers by making vertical conduction between the wafer and the wafer, between the wafer and the wafer. Unlike previous 1C package bonding and bump-based stacking techniques, TSVs enable wafers to be stacked in a three-dimensional direction with the highest density, the smallest form factor, and greatly improve wafer speed and low power consumption. It is also known as the fourth generation of package technology after wire bonding (Wire B〇nding), ΤΑβ and Flip-Chip (FC). The main advantages of the e 3D package are: with the smallest size and weight, will Different kinds of technologies are integrated into a single package, replacing long 2D interconnects with short vertical interconnects, reducing parasitics and power consumption. At present, a series of chemical mechanical polishing materials suitable for polishing stone and copper have appeared. For example, the patent US Pat. No. 2,151,252 A1 discloses a composition and method for the stone CMp, which can select the metal of the stone surface. Miscellaneous polishing; patent US 2G_() 1439() A1 discloses a chemical mechanical polishing slurry for Shixia and metal, which has the characteristics of selective polishing; patent decontamination 48 discloses a kind of use The method of polymer electrolyte (10); the publication (10) tearing discloses a copper chemical polishing process polishing solution, a film forming agent composed of a buffer solution, and a film forming aid and an abrasive to achieve chemical mechanical polishing. Process; Authorized announcement Lin (10) (9) said that the smashing - (10) recording manufacturing and manufacturing methods for integrated circuits 'to make the steel layer point name, rot less and obtain good copper interconnect planarity. Authorized Announcement Lin CN is 65C's special disclosure of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The traditional copper throwing level makes the oxygen-making money oxygen--, and the Wei-Oxygen tilting inhibits the polishing of Shi Xi, and the above-mentioned patent mentions that the polishing liquid for high-speed copper polishing also has insufficient removal rate' or the surface of the silk is present. Defects, scratches, fortune, and/or other residues, or the lack of polishedness of copper, or the presence of a riding or money ship in a polished towel, not suitable for the production of electronic products. Flow needs to be simplified, it is necessary to develop a new chemical mechanical polishing slurry suitable for high-speed processes. SUMMARY OF THE INVENTION The present invention provides a surface-cutting and chemistry thief flat material, which is capable of simultaneously high-speed polishing and copper, and controls local and overall corrosion of metal materials to reduce substrate surface contamination. Things. The invention discloses a polishing flattening yarn, which comprises a grinding surface, an oxidizing agent, a carrier, a tactile and a silky anatomical and a fine-grained polishing rate adjusting agent. The chemical mechanical planarization slurry for polishing bismuth and copper in the present invention, wherein the alkaline polishing rate modifier is one or more of an inorganic domain (test), an organic domain (test), and an ammonia compound. the mix of. The chemical mechanical planarization slurry for polishing bismuth and copper in the present invention, wherein the polishing rate modifier is preferably an ammonia compound having a -NH_ structure. The chemical mechanical planarization slurry of polished ruthenium and copper in the present invention, wherein the alkaline polishing rate modifier is potassium hydroxide, sodium hydroxide, lithium hydroxide, hydrogen peroxide, tetradecylamine hydroxide, and tetra Ethyl hydroxyhydroxide, tetrapropylammonium hydroxide, ammonia water, hydroxylamine, ethylenediamine, diethylamine 201226495 amine, hydroxyethylethylenediamine, triethylenetetramine, polyenepolyamine, ethanolamine, triethanolamine,丨24 _ one or more mixtures of gas oxime, citric acid diamine, propylene diamine, citric acid triamine, spermine, diethylene triamine and ruthenium. The above-mentioned chemical mechanically planarized slurry of polished bismuth and copper, wherein the polishing rate modifier has a mass percentage of 0.05 to 10 Å/Å in the chemical mechanical planarization slurry. The chemical mechanical planarization slurry for polishing stone and copper in the present invention, wherein the abrasive particles are a mixture of one or more of cerium oxide, aluminum oxide, cerium oxide, and polymer particles. The smashing and _chemical mechanical flattening of the invention, the polishing, the mass percentage of the grinding in the chemical mechanical planarizing slurry is 〜5~1〇%. The chemical mechanical planarization of the polishing #copper in the present invention, wherein the abrasive particles have an average particle diameter of 20 to 200 nm, and preferably have an average particle diameter of 3 Å to 1 〇〇 nm. The invention (4) polishing #_ chemical mechanical planarization (10), a towel thereof, a mixture of the oxidized halogen oxyacid or the oxyacid-soluble salt, such as high-hard acid, acid, high Chloric acid, bumping, indifference, 'gas and acid unloading, potassium citrate, secondary desert = potassium, bromine and so on.抛光 Polishing chemical mechanical flat recording material in the present invention, the towel, the oxygen chemical mechanical planarization secret (4) content percentage is (10) 5 ~ 〇%. The polishing chemistry of the present invention is flat, and the chemical mechanical planarizing paste further includes a pH adjusting agent. The chemical mechanical flattening slurry for polishing #铜 in the present invention, wherein the chemical phase flattening stock has a pH of 8·0 to 12.0, and a preferred pH is 9.04.0. In the present invention, the professional photo-degrading slurry further comprises a surfactant, a stabilizer, a rot-inhibitor and/or a bactericide. — ^发财驰光#_姆机械 flattening, its towel, the carrier is activated by water. ^ 6 5 201226495 1. The chemical mechanical planarization slurry of the polished beryllium and copper of the present invention is passed through a polishing system while polishing the copper and copper at a south speed. 2. The present invention polishes the chemical mechanical planarization slurry of tantalum and copper while controlling the local and overall corrosion of the metal material' to reduce contamination of the machine and substrate surfaces and improve product yield. 3. The chemical mechanical planarization slurry of the polished stone and copper of the present invention can adjust the copper/stone selection ratio, and the TSV polishing requirements of different processes are high. [Embodiment] The present invention will be further described by way of examples, and the present invention is not limited to the scope of the embodiments. Before use, the above components are mixed in a specific ratio, a chemical reaction occurs between the various components, and the temperature of the polishing liquid is raised during the polishing process, thereby greatly increasing the efficiency of the polishing liquid. EXAMPLE 1 Polishing of the invention #_Chemical flattening of the age of the components includes G8wt% oxidation of the grinding particles (average secret lGGnm), 5wt% New Zealanding agent, rate-regulating Ethylenediaminetetraacetic acid (〇.5wt% And 1,2,4-tetrazole (0.1% by weight), the pH was adjusted to 1 Torr. Example 2 cerium oxide (average particle diameter: 200 nm) was selected as the abrasive particles, and the mass percentage thereof was 0.1%; the rate adjusting agent selected citric acid diamine (5 wt%) and propylenediamine (iwt%); Potassium acid was used as the oxidant; pH was adjusted to 10.5 » Example 3 Oxide oxide (average particle size 7 〇 nm) was selected as the abrasive particles, the mass percentage of which was 〇5 201226495%; the rate modifier selected citric acid triamine ( 5wt ° / 〇) and spermine (lwt%); 2wt ° / 〇 potassium bromate as an oxidant; pH was adjusted to 10.6. Examples 4 to 18 ' With reference to Examples 1 to 3, different abrasive particles, rate modifiers, and oxidizing agents were selected, and the names and amounts of the main component materials are shown in Table i. Table 1 shows the chemical mechanical planarization slurry of the present invention polishing 矽 and 18 and the main components and mass percentage of the comparative polishing liquid, the components are uniformly mixed, and the deionized water is supplemented by 100% by mass. Finally, adjust the pH to the desired pH with a pH adjuster (2〇%κ〇Η or dilute nitric acid, according to the pH value), continue to stir to a uniform fluid, and let stand for 3 minutes to obtain each chemical mechanical flatness. Slurry. j· 1 invention of chemical mechanical planarization slurry 1~18 and contrast liquid main single fine public clear summer Baigong example grinding 4 ί rate regulator oxidant pH specific substance content wt% specific substance content wt% Specific substance content Wt% 1 Al2〇3 (100nm) 0.8 Tetramethylammonium hydroxide 5 Potassium bromate 5 10 1,2,4-triazole 5 2 Ce〇2 (200nm) 0.1 Tetraethylammonium hydroxide 10 Potassium bromate 2 10.5 Propylenediamine 0.05 3 Si〇2 (70nm) 0.5 Tetrapropylammonium hydroxide 5 Potassium bromate V 2 10.6 Spermine 1 4 Al2〇3(l〇〇nm) 1 Ethylenediamine 0.5 Perrhenic acid 2 8 5 - --- Polyethylene 10 Triethanol 0.5 High performance 8 9 201226495 (Μη : 20000) Amino acid 6 polytetrazide (Μη: 40000) 5 Ammonia water 0.5 Two acid acid 0.05 10 7 SiO2 (20nm) 3 Ethanolamine 1 Acid 0.08 10 8 SiO2 (30nm) 2 Diethylenetriamine 0.5 Potassium hydrogenate 0.2 10.5 9 Si〇2 (80nm) 0.05 Hydroxyethylethylenediamine 2 Southern desert acid 0.5 10.6 10 SiO2 (60nm) 2.5 Triethylenetetramine 1.5 times potassium molybdate 0.8 10.7 11 SiO2 (60nm) 4 polyene polyamine 2 perchloric acid 1.8 11 12 SiO2 (60nm) 1.2 citric acid diamine 1 gas Potassium acid 6 12 13 Si〇2 (60nm) 2 Diamine citrate 1.5 Potassium oxychloride 8 12 14 SiO2 (60nm) 2 Triamine citrate 1.2 Potassium bromate 9 12 15 Si〇2 (60nm) 2 Triamine citrate 1.8 Potassium bromate 10 13 16 SiO2 (60nm) 2 Triamine citrate 1 Potassium bromate 8 10.5 17 Si〇2 (60nm) 2 KOH 4 Potassium bromate 2 10.5 0 melon 2 Glycine 1 18 Polytetrafluoroethylene (Μη: 30000) 4 Ammonia 0.05 Two deserts Acid 0.05 10 Comparative SiO 2 3.5 citric acid 9 Hydrogen peroxide 5 3 201226495 The polishing liquids 1 to 18 of the present invention and the comparative polishing liquids in Table 1 were respectively polished to different materials (including a stone substrate, a Cu substrate). The polishing conditions are the same, and the polishing parameters are as follows: L〇gitech polishing crucible, downward pressure 3~5 psi 'rotary speed/butter head rotation speed=60/80 rpm, polishing time i2〇s, Shixi and copper chemical mechanical flattening slurry flow rate l The polishing results of 〇〇mL/mir^ are shown in Table 2. Table 2 Polishing effect of polishing examples 1 to 18 and Comparative Example of the present invention vs. polishing solution selection ratio Cu/Si downforce (psi) Copper removal rate (A/min) Surface defect 矽 removal rate (A/min) Example 1 1 : 5 3 800 without 4000 Example 2 5:1 3 8000 No 1600 Example 3 2:1 3 8000 Less 4000 Example 4 1:1 4 8000 Less 8000 Example 5 1:1 3 9000 Less 9000 Example 6 1 : 2 4 8000 Less 15000 Example 7 1:1.2 5 8000 Less 10000 Example 8 1:1.2 6 12000 Less 15000 Example 9 1:1.3 3 15000 Less 20000 Example 10 1:2 4 10000 Less 20000 Example 11 1 : 1 6 1 1 1 1 1 1 1 1 1 1 1 1 1 1 16 1:1.2 6 12000 Less 18000 Example 17 1:1.2 6 12000 Less 16000 Example 18 1:1.2 6 12000 Less 15000 Comparative Example - 3 8500 More 100 The data in Table 1 and Table 2 indicate that the present invention is a polished stone eve And after adding a polishing rate modifier to the chemical mechanical flattening material of steel, after polishing Can be adjusted while the chemical mechanical polishing during polishing selectivity of silicon and copper, and to control the overall or localized corrosion effect of the metal material. When polishing the bismuth and copper for different needs, it is only necessary to adjust the composition and mass percentage of the polishing rate modifier in the chemical mechanical planarization slurry of the present invention, that is, the polishing selection ratio of different materials can be realized to meet different Process requirements for TSV polishing. In the above embodiments, a pH adjuster, a surfactant, a stabilizer, a bactericide, and a rot-side can also be added, and the money is simple and has a better use effect. Yingtian understands that the ammonia compound of the present invention includes a primary amine, a swollen amine, and a tertiary amine; the μ% refers to a mass percentage. The specific embodiments of the present invention have been described in detail above, but by way of example only, the invention is not limited to the specific details described above. Anyone skilled in the art, (4) money and alternatives to the present invention are also within the scope of the present invention. Therefore, equal changes and modifications made without departing from the spirit and scope of this month should be covered by the scope of the present invention. [Simple description of the diagram] (None) [Explanation of main component symbols] (None) 12 5