201223727 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種於母玻璃基板上進行開孔加工之母玻 璃基板開孔加工方法及母玻璃基板。 【先前技術】 例如’電聚顯示面板（PDP : Plasma Display Panel)係使 於表面形成有電極之前面玻璃基板、以及於藉由肋條而區 隔之槽内形成有紅、綠、藍之螢光體層及電極之背面玻璃 基板相對向而一體地接合形成。而且，2片玻璃基板間係 於形成有周緣部被密封之密閉之微小間隙之後，於填充有 用以產生放電之含有氬氣及氖氣之氣體之狀態下密封。 背面玻璃基板之連通於上述微小間隙之貫通孔設置於顯 示區域之外側。於製造步驟中’該貫通孔在接合2片玻璃 基板之後’作為用以使上述微小間隙之空氣排出之排氣用 孔而使用’其後作為用以將氣體填充至上述微小間隙内之 氣體供給孔而使用。 於上述貫通孔之加工步驟中，使表面具有微小之鑽石研 磨粒之開孔鑽高速旋轉而於母玻璃基板上實施開孔加工 (例如’參照專利文獻1)。母玻璃基板係用以自一片母玻璃 製作2片以上表面板即用以進行所謂之「多倒角」之玻璃 基板’於一片母玻璃基板上亦製作2個以上排氣用孔。 該母玻璃基板之開孔加工係藉由自下方之第1鑽孔器與 自上方之第2鑽孔器而進行加工。於藉由自下方之第1鑽孔 器加工而達到特定深度之時間點，先拔出第1鑽孔器。其 159553.doc -4- 201223727 · 次’進而於轴方向上進給自上方之第2鑽孔器，而使自下 方所加工之第1孔與自上方所加工之第2孔連通。藉由該開 孔加工方法而防止鑽孔器前端穿透母玻璃基板時於貫通孔 之開口周緣部產生碎屑（邊緣缺口）。 先前技術文獻 專利文獻 專利文獻1 :國際公開2008/044771A1 【發明内容】 發明所欲解決之問題 然而’如上述專利文獻1所記載般使用2個鑽孔器自母玻 璃基板之上表面側與下表面側之兩個方向進行開孔加工之 加工方法中，存在於鑽孔器旋轉之狀態下拔出各鑽孔器時 孔之内周產生螺旋狀之條紋狀缺陷之問題。 又，於電漿顯示面板之製造工廠中，在接合2片母玻璃 基板之後，會進行加熱至高溫（例如，5〇〇°C〜600。〇之熱 處理（煅燒步驟）。上述母玻璃基板之煅燒步驟中，若於開 孔加工而得之貫通孔之内周面存在條紋狀缺陷，則會因伴 隨加熱、冷卻之溫度分佈之變化而造成母玻璃基板上熱應 力（壓縮應力、拉伸應力）作用於條紋狀缺陷而產生以該條 紋狀缺陷為起點之斷裂。 因此，本發明之目的在於鑒於上述情況而提供一種規定 開孔加工後拔出鑽孔器時之鑽孔器旋轉方向之停止位置以 解決上述課題之母玻璃基板開孔加工方法及母玻璃基板。 解決問題之技術手段 159553.doc 201223727 為了解決上述課題’本發明具有如下手段。 ⑴本發明係使旋轉之鑽孔器向母玻璃基板側移動而於上述 母玻璃基板上加X孔之電漿顯示面㈣母玻璃基板開孔加 工方法，且包括： 第1步驟，對i述鑽孔器旋轉時之最大半徑之位置進行 檢測； 第2步驟，於對上述母玻璃基板之開孔加工結束之後， 使上述鑽孔器之旋轉停止或減速；及 —第3步驟’當上述鑽孔器之最大半徑位置進人至預先設 疋之上述孔之圓周方向之安全區域時，拔出上述鑽孔器， 當上述鑽孔器之最大半徑位置未進人至上述孔之上述安全 區域時’㈣上述㈣器之停止位置或減速位置。 (2)本發明較佳為進而包括：第4步驟，根據作用於上述母 玻璃基板之熱應力之作用方向而設定上述最大半徑位置， 以使上述鑽孔器之最大半徑位置進入至上述孔之上述安全 區域；及 第5步驟，記憶上述設定之旋動角度之角度範圍。 (3)本發明較佳為進而包括“步驟，判定對上述母玻璃基 板之開孔加工結束後旋轉停止或旋轉速度進行了減速之上 述鑽孔器之最大半徑位置是否進人至上述孔之上述安全區 域，且 、當於上述第6步驟中判定為上述鑽孔器之最大半徑位置 進入至上述孔之上述安全區域時，上述第3步驟中拔出上 述鎮孔器’當於上述第6步射判定為上述鑽孔器之最大 】59553.doc 201223727 半徑位置未進入至上述孔之上述安全區域時，上述第3步 驟中調整上述鑽孔器之停止或減速位置。 (4) 本發明係一種藉由旋轉之鑽孔器於軸方向上移動而進行 了開孔加工之電漿顯示面板用母玻璃基板，且較佳為. 於藉由上述鑽孔器進行之開孔加工結束而自上述母玻璃 基板拔出上述鑽孔器時，上述孔之内周壁上所產生之條紋 狀缺陷形成在不會受到熱處理之熱應力所引起之拉伸力之 影響之特定範圍内。 (5) 本發明係一種藉由旋轉之鑽孔器於軸方向上移動而進行 了開孔加工之電漿顯示面板用背面玻璃基板，且較佳為： 於藉由上述鑽孔器進行之開孔加工結束而自上述背面玻 璃基板拔出上述鑽孔器時’至少於一個上述孔之内周壁上 產生之條紋狀缺陷形成在平行於上述背面玻璃基板之短邊 之線與通過上述孔之中心之線所形成之角度為±5〇0以内之 上述孔之内周面之區域内。 發明之效果 根據本發明’於孔之圓周上’預先設定不會受到孔之圓 周方向之熱應力所引起之拉伸力之影響之安全區域，當鑽 孔器之最大半徑位置進入至安全區域時，拔出鑽孔器，當 鑽孔器之最大半徑位置未進入至安全區域時，調整鑽孔器 之旋轉方向之停止位置或減速位置。從而，可於孔内周面 之條紋狀缺陷之產生位置處於不易受到熱應力之影響之安 全區域内之情形時自貫通孔拔出鑽孔器，從而可防止在後 159553.doc 201223727 段之熱處理中以條紋狀缺陷為起點之母玻璃基板之斷裂。 【實施方式】 以下，參照圖式對用以實施本發明之形態進行說明。 (實施態樣） [母玻璃基板開孔加工裝置之構成] 圖1係用以說明本發明之母玻璃基板開孔加工裝置之一 實施態樣之概略構成圖。如圖〗所示，母玻璃基板開孔加 工裝置（以下稱作「開孔加工裝置」）10包括夹鉗裝置12、 下孔加工裝置14、上孔加工裝置16、鑽孔器測量部6〇、鑽 孔器旋轉停止位置控制部70。 藉由該開孔加工裝置1 〇而開孔加工之母玻璃基板G係用 於電漿顯示面板之母玻璃基板G，例如為藉由浮式法而製 造之厚度為1 ·8 mm〜2.8 mm之母玻璃基板G。 開孔加工裝置10冬夾鉗裝置12係將母玻璃基板G夾於其 與夾台18之間之裝置’其以形成為環狀之夾板22按壓並夾 持載置於開孔加工裝置1〇本體之平台2〇上之母玻璃基板g 之上表面T。上孔加工裝置16係使下述第1鑽孔器24之前端 插通夾板22之内周部而於母玻璃基板g上加工上孔（第1 孔）。 下孔加工裝置14係如下所述於母玻璃基板〇之下表面b 上加工特定深度之下孔（第2孔）之裝置，其將旋轉之第2鑽 孔器28按壓於母玻璃基板g之下表面而加工特定深度之下 孔。第2鑽孔器28以相對於夾台18大致垂直之方式配置， 且經由固持器34而安裝於第2馬達30之旋轉軸32上。該第2 159553.doc 201223727 馬達30經由下側直動導軌38而升降自由地安裝於下側馬達 安裝部36，且藉由未圖示之下侧升降用進給螺桿裝置而以 相對於母玻璃基板G大致垂直之方式上下移動。根據該下 孔加工裝置14，可藉由將第2鑽孔器28按壓於母玻璃基板G 之下表面B並進行旋轉與進給而加工下孔（第2孔）。再者， 雖未作圖示，但於夾台18上形成有插通孔，且第2鑽孔器 28之前端經由該插通孔抵接於母玻璃基板g之下表面b。 上孔加工裝置16係於母玻璃基板g之上表面T加工上孔 之裝置’其將旋轉之第1鑽孔器24按壓於母玻璃基板G之上 表面T而加工上孔。 又’第1鑽孔器24配置於與下側之第2鑽孔器28為垂直方 向之同轴上，並以相對於夾台i8大致垂直之方式配置，且 經由固持器46而安裝於第1馬達42之旋轉軸44上。該第1馬 達42經由上側直動導軌5〇而升降自由地安裝於上側馬達安 裝部48 ’且藉由未圖示之上側升降進給螺桿裝置而以相對 於母玻璃基板G大致垂直之方式上下移動。根據該上孔加 工裝置16 ’可藉由將第1鑽孔器24按壓於母玻璃基板〇之上 表面T並進行旋轉與進給而加工上孔。 鑽孔器測量部60包含第1雷射干涉儀62、第2雷射干涉儀 64、及雷射位置檢測器66。第1雷射干涉儀62藉由向第1鑽 孔器24之前端外周照射雷射光並接收來自照射位置之反射 光而測量與該照射位置之距離。雷射位置檢測器66根據來 自第1雷射干涉儀62之測量值而運算使第i鑽孔器24於旋轉 方向每偏移特定角度（例如5。〜1 〇。）時之與該照射位置之距 159553.doc 201223727 離，並將該照射位置之鑽孔器半徑作為測量資料輸出。 又，第2雷射干涉儀64藉由向第2鑽孔器28之前端外周照 射雷射光並接收來自照射位置之反射光而測量與該照射位 置之距離。雷射位置檢測器66根據來自第2雷射干涉儀Μ 之測量值而運算使第2鑽孔器28於旋轉方向每偏移特定角 度（例如5。〜10。）時之與該照射位置之距離，並將該照射位 置之鑽孔器半徑作為測量資料輸出。 鑽孔器旋轉停止位置控制部70包含控制裝置72、記憶體 73、第1馬達旋轉檢測器74、第2馬達旋轉檢測器75、第1 馬達驅動76、及第2馬達驅動77。控制裝置72控制下孔加 工裝置14及上孔加工裝置16而於母玻璃基板〇上進行開孔 加工’並且進行用以調整開孔加工後拔出鑽孔器時之鑽孔 器旋轉停止位置之控制處理。 記憶體73具有資料庫，其記憶包含使自雷射位置檢測器 66輸入之各測量資料與各鑽孔器24、28之各特定角度之旋 轉方向位置對應之鑽孔器半徑之測量資料的映射資料。 第1馬達旋轉檢測器74包含例如旋轉編碼器、分解器等 方疋轉檢測機構’檢測第1馬達42之旋轉軸44之旋轉角度並 將該角度檢測信號輸出至控制裝置72 »第2馬達旋轉檢測 器75與第1馬達旋轉檢測器74同樣地包含例如旋轉編碼 器、分解器等旋轉檢測機構，檢測第2馬達30之旋轉軸32 之旋轉角度並將該角度檢測信號輸出至控制裝置72。 第1馬達驅動76根據自控制裝置72輸出之馬達控制信號 而生成對第1馬達42之對應於旋轉速度或旋轉角之驅動信 159553.doc -10· 201223727 號，並輸出至第1馬達42。又’第2馬達驅動77與第i馬達 驅動76同樣地，藉由自控制裝置72輸出之馬達控制信號而 生成對第2馬達30之對應於旋轉速度或旋轉角之驅動信 號’並輸出至第2馬達30。 控制裝置72讀入記憶於記憶體73中之各控制程式並執行 下述開孔加工之控制處理。即，於開孔加工時，控制裝置 72經由各馬達驅動76、77使第i馬達42及第2馬達以數千 r/min(圈每分鐘）以上之高速旋轉驅動，而於母玻璃基板〇 上加工孔。又，於開孔加工結束而自孔拔出各鑽孔器24、 28時’控制裝置72判定藉由各馬達旋轉檢測器74、75而檢 測出之各鑽孔器24、28之旋轉方向之停止位置（最大半徑 位置）位於孔圓周方向之哪一區域（下述之安全區域或應力 集中區域之任一者）。而且，當各鑽孔器24、28之最大半 徑位置進入至不會受到熱應力所引起之拉伸力之影響之安 全區域時’控制裝置72對下孔加工裝置14、上孔加工裝置 16進行反饋控制以拔出各鑽孔器24、28。 [各鑽孔器之開孔加工之流程] 圖2係表示開孔加工之各步驟之流程之圖。如圖2所示， 本實施態樣中進行以下流程1〜流程5之開孔加工。再者， 本實施態樣中於加工上孔之後加工下孔，但亦可於加工下 孔之後加工上孔。 (流程1 ·圖2A)夹持母玻璃基板G而使第1鑽孔器24位於上 表面T側，並且使第2鑽孔器28位於與第1鑽孔器24相對向 159553.doc •11 · 201223727 之下表面B側。再者，第1鑽孔器24與第2鑽孔器28之水平 方向之機械誤差（偏芯）為數十微米以内。 (流程2 :圖2B)使上側之第1鑽孔器24下降而開始上孔40之 加工’並且使下側之第2鑽孔器28上升而開始下孔26之加 工〇 (流程3 :圖2C)於第1鑽孔器24使上孔40加工至較厚度方向 之中央部S靠上方之特定位置（深度H1)之時間點，停止藉 由第1鑽孔器24進行之上孔40之加工，並經由上側直動導 軌5〇使第1馬達42上升而自上孔40向上方拔出第1鑽孔器 24。另一方面’繼續藉由第2鑽孔器28進行之下孔％之加 工。 (流程4 :圖2D)藉由使第2鑽孔器28之前端上升至特定位置 (深度H2)而使下孔26與上孔40貫通。再者，因各鑽孔器 24、28分別於磨削部120之端部外周形成有倒角122(參照 圖3) ’故於本實施態樣中設置有第1鑽孔器24之前端之特 疋位置（深度H1)與第2鑽孔器28之前端位置（深度H2)之軸 方向之交迭量。 (流程5 :圖2E)經由下側直動導軌38使第2馬達30下降而自 貫通孔5向下方拔出第2鑽孔器28。至此，作為母玻璃基板 G之排氣孔之貫通孔5之加工結束。再者，自貫通孔5拔出 第1鑽孔器24及第2鑽孔器Μ時，以各鑽孔器24、28之最大 半徑位置進入至不會受到該貫通孔5之熱應力所引起之拉 伸力之影響之安全區域為條件而拔出各鑽孔器24、28。 此時，下孔26之加工停止位置即深度以藉由下孔％與上 159553.doc 12 201223727 孔40重疊而形成於貫通孔5内周部之階差部6位於較母玻璃 基板G之厚度方向之中央部S靠上表面τ側之方式設定。從 而’由於藉由下孔26與上孔40重疊而形成於貫通孔5内周 部之階差部6位於較母玻璃基板〇之厚度方向之中央部s靠 上表面T側’故而可防止因形成於母玻璃基板〇上之作為 排氣孔之貫通孔5之内周部所形成之階差部6而引起之熱斷 裂（熱應力所引起之斷裂）。 [鑽孔器之前端形狀;| 此處，對各鑽孔器24、28之前端形狀進行說明。圖3係 將鑽孔器之前端形狀放大表示之圖。如圖3所示，各鑽孔 器24、28分別為相同形狀，且包含磨削部12〇(於圖3中， 以緞紋表示）、及手柄130。磨削部12〇使微小之鑽石研磨201223727 VI. Description of the Invention: [Technical Field] The present invention relates to a method for opening a mother glass substrate and a mother glass substrate for performing hole drilling on a mother glass substrate. [Prior Art] For example, a 'PDP (Plasma Display Panel) is a glass substrate on the front surface of which an electrode is formed, and a red, green, and blue phosphor is formed in a groove partitioned by ribs. The body layer and the back glass substrate of the electrode are formed integrally and joined to each other. Further, the two glass substrates are sealed in a state in which a small gap which is sealed by sealing the peripheral portion is formed, and is filled with a gas containing argon gas and helium gas for generating a discharge. The through hole of the back glass substrate that communicates with the minute gap is provided on the outer side of the display area. In the manufacturing step, the through hole is used as an exhaust hole for discharging the air of the minute gap after the joining of the two glass substrates, and then used as a gas supply for filling the gas into the minute gap. Use for holes. In the processing step of the through-hole, the open-hole drill having the fine diamond abrasive grains on the surface is rotated at a high speed to perform the drilling on the mother glass substrate (see, for example, Patent Document 1). The mother glass substrate is used to form two or more surface plates from one mother glass, that is, a so-called "multiple chamfering glass substrate". Two or more exhaust holes are also formed on one mother glass substrate. The opening of the mother glass substrate is processed by the first drill from the lower side and the second drill from the top. The first piercer is first pulled out at a certain depth by machining from the first drill below. The 159553.doc -4- 201223727 · times' further feeds the second drill from the upper side in the axial direction, and the first hole processed from the lower side communicates with the second hole processed from above. By the opening processing method, when the tip end of the piercer penetrates the mother glass substrate, debris (edge notch) is generated at the peripheral edge portion of the opening of the through hole. CITATION LIST Patent Literature Patent Literature 1: International Publication No. 2008/044771A1 SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, as described in the above Patent Document 1, two drills are used from the upper surface side and the lower surface of the mother glass substrate. In the machining method in which the two sides of the surface side are subjected to the drilling process, there is a problem that a spiral stripe-like defect is generated in the inner circumference of the hole when the respective drills are pulled out while the drill is rotating. Further, in the manufacturing plant of the plasma display panel, after joining two mother glass substrates, heating is performed to a high temperature (for example, 5 〇〇 ° C to 600 〇 heat treatment (calcination step). The mother glass substrate is In the calcination step, if there is a streaky defect on the inner peripheral surface of the through-hole obtained by the drilling process, thermal stress (compressive stress, tensile stress) on the mother glass substrate is caused by a change in temperature distribution accompanying heating and cooling. Acting on a stripe-shaped defect to generate a fracture starting from the stripe-shaped defect. Therefore, an object of the present invention is to provide a stop for the direction of rotation of the drill when the drill is pulled out after the opening process is specified in view of the above-described circumstances. The mother glass substrate opening method and the mother glass substrate which solve the above problems. Technical means for solving the problem 159553.doc 201223727 In order to solve the above problem, the present invention has the following means. (1) The present invention is to rotate the drill to the mother. a method for processing a mother glass substrate by applying a X-hole plasma display surface (4) on the glass substrate side to move the glass substrate side, and comprising: In the first step, the position of the maximum radius when the drill is rotated is detected; in the second step, after the opening of the mother glass substrate is finished, the rotation of the drill is stopped or decelerated; 3 step 'When the maximum radius position of the above-mentioned drill enters into a safe area in the circumferential direction of the aforementioned hole, the above-mentioned drill is pulled out, and the maximum radius position of the drill is not entered into the above (4) The stop position or the deceleration position of the (4) device in the above-mentioned safety region of the hole. (2) The present invention preferably further includes: in the fourth step, setting the maximum according to the action direction of the thermal stress acting on the mother glass substrate a radius position such that the maximum radius position of the drill enters the safe area of the hole; and a fifth step of storing the angular range of the set rotation angle. (3) The present invention preferably further includes "steps Determining whether the maximum radius position of the above-mentioned drill that decelerates the rotation stop or the rotation speed after the end of the hole processing of the mother glass substrate is entered into the hole In the safety zone, when it is determined in the sixth step that the maximum radial position of the drill enters the safe area of the hole, the third hole is pulled out in the third step. The step is determined to be the maximum of the above-mentioned drills. 59553.doc 201223727 When the radial position does not enter the above-mentioned safe area of the above hole, the stop or deceleration position of the above-mentioned drill is adjusted in the third step. (4) The present invention is A mother glass substrate for a plasma display panel which is opened by a rotary drill in an axial direction, and preferably. The opening process by the drill is completed from the above When the mother glass substrate is pulled out of the above-mentioned drill, the stripe-like defects generated on the inner peripheral wall of the hole are formed within a specific range which is not affected by the tensile force caused by the thermal stress of the heat treatment. (5) The present invention is a back glass substrate for a plasma display panel which is opened by a rotary drill in the axial direction, and is preferably: opened by the above-mentioned drill When the hole processing is completed and the drill is pulled out from the rear glass substrate, 'a stripe-shaped defect generated on at least one of the inner peripheral walls of the hole is formed in a line parallel to the short side of the back glass substrate and passes through the center of the hole The angle formed by the line is within the area of the inner circumferential surface of the hole within ±5〇0. EFFECTS OF THE INVENTION According to the present invention, 'on the circumference of a hole', a safety region which is not affected by the tensile force caused by the thermal stress in the circumferential direction of the hole is preset, when the maximum radius position of the drill enters the safe area , pull out the drill, adjust the stop position or deceleration position of the rotation direction of the drill when the maximum radius position of the drill does not enter the safe area. Therefore, the drill can be pulled out from the through hole when the position of the stripe-shaped defect in the inner circumferential surface of the hole is in a safe area that is not easily affected by thermal stress, thereby preventing heat treatment in the latter paragraph 159553.doc 201223727 The fracture of the mother glass substrate starting from the stripe-shaped defect. [Embodiment] Hereinafter, embodiments for carrying out the invention will be described with reference to the drawings. (Embodiment) [Configuration of the mother glass substrate opening processing apparatus] Fig. 1 is a schematic configuration view for explaining an embodiment of the mother glass substrate opening processing apparatus of the present invention. As shown in the figure, the mother glass substrate opening processing device (hereinafter referred to as "opening processing device") 10 includes a clamping device 12, a lower hole processing device 14, an upper hole processing device 16, and a drill measuring portion 6 The reamer rotation stop position control unit 70. The mother glass substrate G which is opened by the hole drilling apparatus 1 is used for the mother glass substrate G of the plasma display panel, for example, a thickness of 1·8 mm to 2.8 mm manufactured by a floating method. Mother glass substrate G. The hole boring device 10 is a winter tong device 12 which is a device for sandwiching the mother glass substrate G between the yoke 18 and the yoke 18, which is pressed and held by the splint 22 formed in the ring to be placed in the boring device 1 The upper surface T of the mother glass substrate g on the platform 2 of the body. In the upper hole processing device 16, the front end of the first drill 24 is inserted into the inner peripheral portion of the clamp 22 to machine the upper hole (first hole) in the mother glass substrate g. The lower hole processing device 14 is a device for processing a hole (second hole) having a specific depth below the surface b of the mother glass substrate , as follows, and pressing the rotating second reamer 28 against the mother glass substrate g The lower surface is machined to a hole below a certain depth. The second piercer 28 is disposed substantially perpendicular to the gantry 18 and is attached to the rotating shaft 32 of the second motor 30 via the retainer 34. In the second 159553.doc 201223727, the motor 30 is attached to the lower motor mounting portion 36 by the lower linear guide rail 38, and is attached to the lower motor mounting portion 36 by the lower side feed screw device (not shown). The substrate G is moved up and down in a substantially vertical manner. According to the lower hole processing device 14, the lower hole (second hole) can be processed by pressing the second piercer 28 against the lower surface B of the mother glass substrate G and rotating and feeding. Further, although not shown, an insertion hole is formed in the holder 18, and the front end of the second piercer 28 abuts against the lower surface b of the mother glass substrate g via the insertion hole. The upper hole processing device 16 is a device for processing the upper hole on the upper surface T of the mother glass substrate g. The first drill 24 that is rotated is pressed against the upper surface T of the mother glass substrate G to process the upper hole. Further, the first drill 24 is disposed coaxially with the lower second drill 28 in the vertical direction, and is disposed substantially perpendicular to the clamp i8, and is attached to the first via the retainer 46. 1 on the rotating shaft 44 of the motor 42. The first motor 42 is attached to the upper motor mounting portion 48' by the upper linear guide rail 5A, and is vertically moved up and down with respect to the mother glass substrate G by the upper side lowering and feeding screw device (not shown). mobile. According to the upper hole processing device 16', the upper hole can be machined by pressing the first piercer 24 against the upper surface T of the mother glass substrate and rotating and feeding. The drill measuring unit 60 includes a first laser interferometer 62, a second laser interferometer 64, and a laser position detector 66. The first laser interferometer 62 measures the distance from the irradiation position by irradiating the outer circumference of the front end of the first hole boring device 24 with the laser beam and receiving the reflected light from the irradiation position. The laser position detector 66 calculates the irradiation position when the i-th drill 24 is shifted by a specific angle (for example, 5 to 1 〇) in the rotation direction based on the measured value from the first laser interferometer 62. The distance is 159553.doc 201223727, and the radius of the drill at the irradiation position is output as measurement data. Further, the second laser interferometer 64 measures the distance from the irradiation position by irradiating the laser beam to the outer periphery of the front end of the second reamer 28 and receiving the reflected light from the irradiation position. The laser position detector 66 calculates the position at which the second reamer 28 is shifted by a specific angle (for example, 5 to 10 Å) in the rotation direction based on the measured value from the second laser interferometer 与. The distance and the radius of the drill at the irradiation position are output as measurement data. The reamer rotation stop position control unit 70 includes a control device 72, a memory 73, a first motor rotation detector 74, a second motor rotation detector 75, a first motor drive 76, and a second motor drive 77. The control device 72 controls the lower hole processing device 14 and the upper hole processing device 16 to perform the hole drilling process on the mother glass substrate ' and performs the rotation stop position of the reamer when the boring device is removed after the boring process is adjusted. Control processing. The memory 73 has a database containing a map of measurement data of the reamer radius corresponding to the rotational direction positions of the respective angles of the respective angles of the respective drills 24, 28 from the respective measurement data input from the laser position detector 66. data. The first motor rotation detector 74 includes, for example, a rotation detecting mechanism such as a rotary encoder or a resolver that detects a rotation angle of the rotation shaft 44 of the first motor 42 and outputs the angle detection signal to the control device 72 » the second motor rotation Similarly to the first motor rotation detector 74, the detector 75 includes a rotation detecting mechanism such as a rotary encoder or a resolver, detects the rotation angle of the rotation shaft 32 of the second motor 30, and outputs the angle detection signal to the control device 72. The first motor drive 76 generates a drive signal 159553.doc -10·201223727 corresponding to the rotational speed or the rotational angle of the first motor 42 based on the motor control signal output from the control device 72, and outputs it to the first motor 42. In the same manner as the ith motor drive 76, the second motor drive 77 generates a drive signal corresponding to the rotation speed or the rotation angle of the second motor 30 by the motor control signal output from the control device 72, and outputs it to the 2 motor 30. The control unit 72 reads in each control program stored in the memory 73 and performs control processing of the following hole processing. That is, during the drilling process, the control device 72 drives the i-th motor 42 and the second motor to rotate at a high speed of several thousand r/min (circle per minute) or more via the motor drives 76 and 77, and the mother glass substrate 〇 Machine the hole. Further, when the drilling process 24 and 28 are pulled out from the hole after the drilling process is completed, the control device 72 determines the rotation directions of the respective drills 24 and 28 detected by the motor rotation detectors 74 and 75. The stop position (maximum radius position) is located in the circumferential direction of the hole (either the safety zone or the stress concentration zone described below). Moreover, when the maximum radial position of each of the drills 24, 28 enters a safe area that is not affected by the tensile force caused by thermal stress, the control device 72 performs the lower hole processing device 14 and the upper hole processing device 16. Feedback control is performed to pull out each of the drills 24, 28. [Flow of Opening Process of Each Drill] FIG. 2 is a view showing a flow of each step of the hole drilling process. As shown in Fig. 2, in the present embodiment, the following steps 1 to 5 are performed. Furthermore, in this embodiment, the lower hole is processed after the upper hole is machined, but the upper hole may be processed after the lower hole is processed. (Flow 1: Fig. 2A) The mother glass substrate G is sandwiched so that the first piercer 24 is positioned on the upper surface T side, and the second piercer 28 is positioned opposite to the first piercer 24, 159553.doc • 11 · Surface B side under 201223727. Further, the mechanical error (eccentricity) in the horizontal direction of the first piercer 24 and the second piercer 28 is within several tens of micrometers. (Scheme 2: Fig. 2B) The first drill 24 is lowered to start the machining of the upper hole 40, and the lower second drill 28 is raised to start the machining of the lower hole 26 (flow 3: 2C) When the first hole boring machine 24 processes the upper hole 40 to a specific position (depth H1) above the center portion S in the thickness direction, the upper hole 40 is stopped by the first reamer 24. After machining, the first motor 42 is raised by the upper linear guide rail 5, and the first piercer 24 is pulled upward from the upper hole 40. On the other hand, the processing of the lower hole % is continued by the second reamer 28. (Flow 4: Fig. 2D) The lower hole 26 and the upper hole 40 are penetrated by raising the front end of the second piercer 28 to a specific position (depth H2). Further, since the respective piers 24 and 28 are respectively formed with chamfers 122 on the outer periphery of the end portion of the grinding portion 120 (see FIG. 3), the first end of the first piercer 24 is provided in the present embodiment. The amount of overlap between the characteristic position (depth H1) and the axial direction of the front end position (depth H2) of the second drill 28. (Flow 5: Fig. 2E) The second motor 30 is lowered by the lower linear guide 38, and the second piercer 28 is pulled downward from the through hole 5. Thus, the processing of the through hole 5 as the vent hole of the mother glass substrate G is completed. Further, when the first piercer 24 and the second piercer 拔 are pulled out from the through hole 5, the maximum radial position of each of the piercers 24 and 28 is entered so as not to be caused by the thermal stress of the through hole 5. The respective drills 24, 28 are pulled out under the condition that the safety zone is affected by the tensile force. At this time, the processing stop position of the lower hole 26, that is, the depth is formed by the lower hole % overlapping with the upper 159553.doc 12 201223727 hole 40, and the step portion 6 formed on the inner peripheral portion of the through hole 5 is located at the thickness of the mother glass substrate G. The central portion S of the direction is set so as to be on the upper surface τ side. Therefore, the step portion 6 formed on the inner peripheral portion of the through hole 5 by the lower hole 26 and the upper hole 40 is located on the upper surface T side of the central portion s in the thickness direction of the mother glass substrate '. Thermal fracture (fracture due to thermal stress) caused by the step portion 6 formed in the inner peripheral portion of the through hole 5 as the vent hole formed on the mother glass substrate. [Drilling device front end shape; | Here, the shape of the front end of each of the drills 24, 28 will be described. Fig. 3 is an enlarged view showing the shape of the front end of the drill. As shown in Fig. 3, each of the drills 24, 28 has the same shape, and includes a grinding portion 12 (shown in satin in Fig. 3) and a handle 130. Grinding part 12 研磨 grinding tiny diamonds
面之方式設置。較佳為使例如2〇〇〜8〇〇篩目之粒度之 鑽石研磨粒固定於磨削部丨2〇。 進而， 進而’於磨削冑120之前端部121之外周側緣部形成有倒 角m。前端部m之倒角122之作用在於抑制與玻璃表面 角 122。 接觸時之邊緣缺口。 [各鑽孔器之最大皋伲办S θ .Face mode setting. Preferably, the diamond abrasive grains having a particle size of, for example, 2 Å to 8 Å are fixed to the grinding portion 丨2〇. Further, the chamfering angle m is formed on the outer peripheral side edge portion of the end portion 121 before the grinding of the crucible 120. The chamfer 122 of the front end portion m serves to suppress the angle 122 with the glass surface. Edge gap at the time of contact. [Maximum operation of each drill S θ .
159553.doc -13- 201223727 24、28之上述磨削部120之外周部124之位置。 於各鑽孔器24、28處於自母玻璃基板G之上表面T、下 表面B離開特定距離之高度位置（待機位置）時，各雷射干 涉儀62、64自水平方向對各磨削部12〇之外周部124照射雷 射光而測量距各磨削部120之距離。 而且，雷射位置檢測器66與每使各鑽孔器24、28於旋轉 方向旋轉特定角度（例如5。〜10。）時同步地，根據來自各雷 射干涉儀62、64之測量值而運算與該磨削部12〇之照射位 置之距離，並將該照射位置之鑽孔器半徑作為測量資料輸 出。 [母玻璃基板之開孔加工位置] 圖5係用以說明母玻璃基板之開孔加工之母基板之俯視 圖。如圖5所示，背面側之母玻璃基板2〇〇形成為具有6個 畫面之面積之大小。母玻璃基板2〇〇於各背面玻璃基板3〇〇 之顯示區域210(以單點劃線表示）之外側加工貫通孔5作為 排氣孔。貫通孔5形成於母基板2〇〇之周緣部附近。於煅燒 步驟中進行熱處理（加熱、冷卻）時，母基板2〇〇上會產生溫 度分佈，且藉此於貫通孔5之周緣部產生應力。 再者，母基板200於下述煅燒步驟之後，沿虛線所示之 切割線C切割而成為6片背面玻璃基板。 [測量資料] 圖6係表示鑽孔器之各旋轉位置及前端外周之半徑之測 量資料之圖。如圖6所示，例如當各鑽孔器24、28之磨削 #120之外周為圓形而不存在因失持所造成之偏芯時，因 159553.doc •14· 201223727 來自各雷射干涉儀62、64之測量值為固定，故測量值與平 行於橫軸之基準線KO(於圖6中，以雙點劃線表示）重疊。 然而，即便可以各鑽孔器24、28之磨削部120之外周成 為圓形之方式製作，於手柄13〇夾持於固持器34、46時略 微傾斜之清A時，或偏芯地保持之情形時，若使各鑽孔器 24 28旋轉，則其外周部124亦存在半徑較大之部分及較 小之部分。該情形時，來自各雷射干涉儀62、64之測量值 並非固疋，而成為描繪包含大於基準線尺〇之測量值與小於 基準線K0之測量值之正弦波形狀（圖6中為以單點劃線、或 實線表示）。 從而，於各鑽孔器24、28之偏芯較大之情形時，如圖表 A(圖6中為以實線表示)所示，以約18〇。之間隔檢測最小半 徑A1、最大半徑A2之角度位置。又，於各鑽孔器24、28 之偏怒較小之情形時，如圖〇(圖6中為以單點劃線表示） 所示，以約180。之間隔檢測最小半徑B1、最大半徑B2之角 度位置。 於控制裝置72中，藉由運算而檢測最小半#Al、最大半 徑A2或最小半徑B1、最大半徑B2產生於〇。〜36〇。之哪一角 度位置，絲據上述測量資料製作跨及全周之映射資料， 並將該映射資料記憶於記憶體73之資料庫中。 再者，因最大半徑依各鑽孔器24、28之偏芯量不同而不 同’故開孔加工後拔出鑽孔器時之貫通孔5之内周面上所 產生之條紋狀缺陷之深度會發生變動。當條紋狀缺陷之深 度超過特定深度時，產生熱應力所造成之斷裂之可能性提 159553.doc -15- 201223727 高0 [熱應力之作用] 圖7 A係用以說明母玻璃基板之煅燒步驟之一例之圖。如 圖7A所示’於煅燒步驟中，通常將母玻璃基板G(圖5所示 之母基板200)載置於搬送用基座220之上表面，並沿著母 玻璃基板G之長邊方向搬送過加熱爐230内。加熱爐230内 於被加熱至約50(TC〜60CTC之高溫之後冷卻至特定溫度。 作為加熱爐230之加熱方法，可利用藉由使用設置於加熱 爐23 0之爐壁上之加熱器加熱環境氣體而加熱母玻璃基板〇 之方法。 於加熱爐230内’經加熱之母玻璃基板一旦锻燒步驟結 束即自加熱爐230取出並進行冷卻。 圖7B係用以說明上述煅燒步驟及冷卻步驟時作用於母玻 璃基板之貫通孔之熱應力之圖。如圖7B所示，上述煅燒步 驟及冷卻步驟中作用於貫通孔5之内周面之拉伸應力以之 作用方向為母玻璃基板G之長邊方向（X方向）。其原因在 於：般燒步驟及冷卻步驟中之母玻璃基板之溫度分佈存在 母玻璃基板G之中来部之溫度變高，而母玻璃基板G之周 邊部之溫度變低之情形’從而成為導致貫通孔5於母玻璃 基板G之短邊方向（γ方向）崩塌之變形。 實際上’藉由實驗確認出：當母玻璃基板G之溫度分佈 為母玻璃基板G之中央部之溫度較高，而母玻璃基板〇之 周邊部之溫度較低時，作用於貫通孔5之内周面之拉伸應 力Ft所造成之變形’於貫通孔5之¥方向上最大，而於X方 159553.doc • 16 · 201223727 向上最小。 又’自貫驗結果可知，於圖7B中區域α(區域α之中心角 範圍=大約土40。）所示之範圍為產生拉伸應力Ft所造成之較 大變形之應力集中區域，區域β(區域β之中心角範圍=大約 100°)所示之範圍為產生拉伸應力Ft所造成之較小變形之安 全區域。即’於圖7B中，俯視時，與通過貫通孔5之中心 之直線且與母玻璃基板G之短邊方向（Y方向）所形成之角 為-40°〜+40°之直線形成交點之貫通孔5之圓周上之區域為 區域α’與通過貫通孔5之中心之直線且與母玻璃基板〇之 長邊方向（X方向）所形成之角為_50。〜+50。之直線形成交點 之貫通孔5之圓周上之區域為區域β。再者，作為玻璃之特 14 ’已知有對壓縮應力之对壓強度較強’但對拉伸應力之 封壓強度較弱。故而，於拔出鑽孔器時貫通孔5之内周面 上所產生之條紋狀缺陷產生於應力集中區域之情形時，易 於產生拉伸應力所造成之斷裂。 因此’根據作用於貫通孔5之内周面之拉伸應力Ft所造 成之變形之分佈而設定：安全區域，其不易於拔出鑽孔器 時產生因貫通孔5之内周面上所產生之條紋狀缺陷所造成 之斷裂，及應力集中區域，其易於在拔出鑽孔器時產生因 貫通孔5之内周面上所產生之條紋狀缺陷所造成之斷裂； 可藉由防止於貫通孔5之内周面之應力集中區域（區域α)產 生條紋狀缺陷而防止上述條紋狀缺陷所造成之斷裂。 即自防止斷裂之觀點而言，較佳為母玻璃基板上之貫 通孔5之内周面上所產生之條紋狀缺陷存在於下述區域。 159553.doc -17- 201223727 條紋狀缺陷之存在位置較佳為平行於母玻璃基板之長邊之 線與通過貫通孔之中心之線所形成之角度為±50。以内之貫 通孔5之内周面之區域，更佳為±25。以内之貫通孔5之内周 面之區域，尤佳為±10。以内之貫通孔5之内周面之區域。 通常母玻璃基板與背面玻璃基板為圖5所示之位置關 係。故而，自防止斷裂之觀點而言，較佳為背面玻璃基板 上之貫通孔5之内周面所產生之條紋狀缺陷存在於下述區 域〇 條紋狀缺陷之存在位置較佳為平行於背面玻璃基板之短 邊之線與通過貫通孔之中心之線所形成之角度為土5〇。以内 之貫通孔5之内周面之區域，更佳為±25。以内之貫通孔5之 内周面之區域’尤佳為±1〇。以内之貫通孔5之内周面之區 域。 [開孔加工之控制處理] 圖8係用以說明控制裝置所執行之開孔加工之控制處理 之流程圖。於圖8之S11中，若控制裝置72確認於開孔加工 裝置10之平台20、夹台18上裝填有母玻璃基板G，且保持 於特定位置，則進入^2,測量形成於各鑽孔器24、28之 前端之磨削部12〇之外周。再者，該測量方法係如上所述 自各雷射干涉儀62、64向磨削部12〇之外周照射雷射光， 而測®距對應於各鑽孔器24、28之每隔特定角度之旋動角 度之照射位置的距離，並將該測量值記憶於記憶體乃中。 於下一 S13中，與使各鑽孔器24、28於 特定角度（例如5。鲁）同步地，根據各雷射千涉儀62= 159553.doc 201223727 之測量值而運算與該磨削部120之照射位置之距離，當獲 得該照射位置之鑽孔器半徑之測量資料時，例如，製作圖 6所示之根據對應於各鑽孔器之旋動角度之鑽孔器半徑之 測量資料而獲得之資料圖並記憶於記憶體73中。即，自 S 12至此為檢測錯孔器旋轉時之最大半徑之位置之第1步 驟。進而，參照上述圖7B所示之孔5之圓周方向上之安全 區域之範圍’依照該資料圖，根據作用於母玻璃基板G之 熱應力所引起之拉伸應力之作用方向而設定上述鑽孔号之 最大半控位置（第4步驟），以使加工時上述鑽孔器之最大半 徑位置進入至形成於母玻璃上之貫通孔之安全區域。 繼而，進入S14，自上述資料圖抽取上述已設定之各鑽 孔器24、28之最大半徑位置之旋動角度（最大半徑位置之 圓周方向位址）並記憶於記憶體73中（第5步驟）。於下一S15 中’將各鑽孔器24、28進給至母玻璃基板ο側而開始開孔 加工（參照圖2B之流程2)。 若開始藉由各鑽孔器24、28對母玻璃基板G之開孔加 工’則於S 16中檢查上表面側之上孔4〇之深度是否達到預 先設定之加工深度H1。於S16中’在上孔40之深度達到加 工深度H1之後，進入S17，使第1鑽孔器24之旋轉停止（第2 步驟）。再者’於第1鑽孔器24之前端到達母玻璃基板G之 特定深度之後，可使第1鑽孔器24之旋轉停止，或亦可使 第1鑽孔器24之旋轉速度減緩至1 r/mjn〜5 r/min之低速旋 轉。 於下一 S18中’藉由第丨馬達旋轉檢測器74之檢測信號而 159553.doc -19- 201223727 讀入旋轉軸44之旋轉方向之停止角度位置。繼而，進入 S 19 ’將藉由上述第1馬達旋轉檢測器74而檢測出之旋轉軸 44之停止角度位置（停止位置之圓周方向位址），即第1鑽孔 器24之停止角度位置與上述記憶於記憶體73之資料庫中之 資料圖進行對照而檢查該第1鑽孔器24之最大半徑位置（最 大半徑之圓周方向位址）是否進入至上述貫通孔5之内周面 之安全區域（區域β)之範圍内（第6步驟）。 當於S19中，第1鑽孔器24之最大半徑位置進入至上述貫 通孔5之内周面之應力集中區域（區域α)之範圍内時（Ν〇之 情形時），進入S20，使直接連結有第1鑽孔器24之第1馬達 42之旋轉軸44旋動例如角度80。（第3步驟）》再者，此時之 旋動角度並不限於80。，只要為大於區域α之中心角範圍 =40°之角度，即可將第1鑽孔器24之最大半徑位置移動至 安全區域（區域β)。 其後’重複上述S17〜S19之處理《又當於上述S19中，在 使第1馬達42之旋轉停止之時間點第1鑽孔器24之最大半徑 位置進入至上述貫通孔5之内周面之安全區域（區域β)之範 圍内時（YES之情形時），不進行上述S20之馬達控制處理， 而進入S21。於該S21中’經由上側直動導軌50使第1馬達 42上升而自母玻璃基板G之上孔40向上方拔出第1鑽孔器 24(第3步驟：參照圖2C之流程3)。藉此，可防止拔出第1 鑽孔器24時之條紋狀缺陷產生於貫通孔5之内周面之應力 集中區域（區域α)。又，第1鑽孔器24之拔出，較佳為以例 如10 mm/s〜40 mm/s之速度進行。 159553.doc -20- 201223727 於下一 S22中，檢查下表面側之下孔26之深度是否達到 預先設定之加工深度H2。於S22中，在下孔26之深度達到 加工冰度H2之後（參照圖2D之流程4) ’進入S23，使第2鑽 孔器28之旋轉停止（第2步驟）。再者，於第2鑽孔器28之前 端到達母玻璃基板G之特定深度之後，可使第2鑽孔器28之 旋轉停止’或亦可使第2鑽孔器28之旋轉速度減緩至i r/min〜5 r/min之低速旋轉。 於其次之S24中，藉由第2馬達旋轉檢測器75之檢測信號 而讀入旋轉軸32之停止角度位置。繼而，進入μ〗，將藉 由上述第2馬達旋轉檢測器75而檢測出之旋轉轴32之停止 角度位置’即第2鑽孔器28之停止角度位置與上述記憶於 s己憶體73之資料庫中之資料圖進行對照而檢查該第2鑽孔 器28之最大半徑位置是否進入至上述貫通孔5之内周面之 安全區域（區域β)之範圍内（第6步驟）。 當於S25中’第2鑽孔器28之最大半徑位置進入至上述貫 通孔5之内周面之應力集中區域（區域α)之範圍内時（no之 情形時），進入S26 ’使直接連結有第2鑽孔器28之第2馬達 30之旋轉軸32旋動例如80。（第3步驟）。再者，此時之旋動 角度並不限於80° ’只要為大於區域α之中心角範圍=4〇。之 角度’即可將第2鑽孔器28之最大半徑位置移動至安全區 域（區域β)。 其後’重複上述S23~S25之處理。又，當於上述S25中， 在使第2馬達30之旋轉停止之時間點第2鑽孔器28之最大半 徑位置進入至上述貫通孔5之内周面之安全區域（區域p)之 159553.doc -21· 201223727 範圍内時（YES之情形時）’不進行上述S26之馬達控制處理 而進入S27。於該S27中’經由下侧直動導軌38使第2馬達 30下降而自母玻璃基板g之孔26向下方拔出第2鑽孔器 28(第3步驟：參照圖2E之流程5)。藉此，可防止拔出第2 鑽孔器28時之條紋狀缺陷產生於貫通孔5之内周面之應力 集中區域（區域α)。又，第2鑽孔器28之拔出，較佳為以例 如10 mm/s〜40 mm/s之速度進行。 於下一 S28中’檢查貫通孔5之加工個數是否已全部加 工。例如，於上述如圖5所示對應於6個畫面尺寸之母基板 2〇〇之情形時，在6個位置加工貫通孔5❶當貫通孔5之加工 個數少於6時（NO(否）之情形時），反覆進行S15〜S28之控制 處理直至於6個位置加工有貫通孔5。 又’當於S28中，貫通孔5之加工個數已全部加工時 (YES之|f形時）進入S29，將開孔加工已結束之母玻璃基板 G自開孔加工裝置10之平台2〇、夾台18取出並使未加工 之新母玻璃基板200保持於平台2〇、夾台18上。再者，母 玻璃基板200之更換作業係藉由母玻璃基板搬送用機器人 而進行。 於下S30中，根據鑽孔器使用次數或鑽孔器加工時間 而檢查是否達到所規定之鑽孔器更換時期。當於S30中檢 查出當前使用之各鑽孔器24、28達到鑽孔器更換時期時 (YES(是）之情形時），進行各鑽孔器24、28之更換作業。 然後，於S3 1中，刪除記憶於記憶體73中之該各鑽孔器 24、28之映射資料。於已進行各鑽孔器24、28之更換作業 159553.doc -22- 201223727 之情形時，接下來自su之控制處理進行。 從而’於測量各㈣器24、28之最大半徑位置， 加工後使各鑽孔器24、28之旋轉停止而自各馬達二 器之檢測信號所得之停止位置（圓周方向位址）進入j 至貫通孔5之内周面之安全區域（區域伙情形時，藉由自 貫通孔5拔出各鑽孔器24、28，可防止拔出切孔器 28時之條紋狀缺陷產生於貫通孔5之内周面之應力集中區 域（區域《)，從而可預防煅燒步驟中之熱應力所造成之母 玻璃基板G之斷裂。 又，參照特定之實施態樣對本發明詳細地進行了說明， 但業者明白只要未脫離本發明之精神與範圍，則可添加各 種修正或變更。 本申請案係基於2010年1〇月20曰申請之曰本專利申請案 2010-235885者，且本文中作為參照引用其内容。 【圖式簡單說明】 圖1係用以說明本發明之母玻璃基板開孔加工裝置之一 實施態樣之概略構成圖。 圖2 A〜圖2E係表示開孔加工之各步驟之流程之圖。 圖3係將鑽孔器之前端形狀放大後表示之圖。 圖4係表示對各鑽孔器之前端外周之最大半徑位置進行 測量之雷射干涉儀之圖。 圖5係用以說明開孔加工之母玻璃基板之俯視圖。 圖ό係表示鑽孔器之各旋轉位置及前端外周之半徑之剩 量資料之圖。 159553.doc •23- 201223727 圖7A係用以說明母玻璃基板之锻燒步驟之圖。 圖7B係用以說明作用於母玻璃基板之貫通孔之熱應力之 圖。 圖8係用以說明控制裝置所執行之開孔加工之控制處理 之流程圖。 【主要元件符號說明】 10 母玻璃基板開孔加工裝置 12 夾鉗裝置 14 下孔加工裝置 16 上孔加工裝置 18 夾台 20 平台 22 夾板 24 第1鑽孔器 26 下孔 28 第2鑽孔器 30 第2馬達 32、44 旋轉軸 34、46 固持器 36 下側馬達安裝部 38 下側直動導軌 40 上孔 42 第1馬達 48 上側馬達安裝部 159553.doc •24· 201223727 50 60 62 64 66 70 72 73 74 75 76 77 120 121 122 124 130 200 210 220 230 上側直動導執 鑽孔器測量部 第1雷射干涉儀 第2雷射干涉儀 雷射位置檢測器 鑽孔器旋轉停止位置控制部 控制裝置 記憶體 第1馬達旋轉檢測器 第2馬達旋轉檢測器 第1馬達驅動 第2馬達驅動 磨削部 前端部 倒角 外周部 手柄 母玻璃基板 顯不區域 搬送用基座 加熱爐 159553.doc -25-159553.doc -13- 201223727 The position of the outer peripheral portion 124 of the above-described grinding portion 120 of 24, 28. When each of the drills 24 and 28 is at a height position (standby position) from the upper surface T and the lower surface B of the mother glass substrate G by a certain distance, the respective laser interferometers 62 and 64 are horizontally opposed to the respective grinding portions. The outer circumference 124 of the 12 照射 irradiates the laser light and measures the distance from each of the grinding portions 120. Moreover, the laser position detector 66 is synchronized with the measured values from the respective laser interferometers 62, 64 in synchronization with each of the drills 24, 28 being rotated by a specific angle (e.g., 5 to 10) in the direction of rotation. The distance from the irradiation position of the grinding portion 12 is calculated, and the radius of the drill at the irradiation position is output as measurement data. [Positioning Position of the Mother Glass Substrate] Fig. 5 is a plan view showing the mother substrate for the opening of the mother glass substrate. As shown in Fig. 5, the mother glass substrate 2 on the back side is formed to have an area of six screens. The mother glass substrate 2 is formed on the outer side of the display region 210 (indicated by a one-dot chain line) of each of the back glass substrates 3 to process the through holes 5 as vent holes. The through hole 5 is formed in the vicinity of the peripheral portion of the mother substrate 2A. When the heat treatment (heating, cooling) is performed in the calcination step, a temperature distribution is generated on the mother substrate 2, and stress is generated in the peripheral portion of the through hole 5. Further, after the calcination step described below, the mother substrate 200 is cut along the cutting line C indicated by a broken line to form six back glass substrates. [Measurement Data] Fig. 6 is a view showing measurement data of the respective rotational positions of the drill and the radius of the outer periphery of the front end. As shown in FIG. 6, for example, when the circumference of the grinding #120 of each of the drills 24, 28 is circular and there is no eccentricity caused by the loss of holding, the 159553.doc •14·201223727 comes from each laser. The measured values of the interferometers 62, 64 are fixed, so that the measured values overlap with the reference line KO (indicated by a two-dot chain line in Fig. 6) parallel to the horizontal axis. However, even if the outer circumference of the grinding portion 120 of each of the drills 24 and 28 is circular, it is slightly slanted when the handle 13 is clamped to the holders 34 and 46, or is eccentrically held. In the case where the respective drills 24 to 28 are rotated, the outer peripheral portion 124 also has a portion having a large radius and a small portion. In this case, the measured values from the respective laser interferometers 62, 64 are not fixed, but become a sine wave shape that includes a measured value larger than the reference line scale and a measured value smaller than the reference line K0 (in FIG. Dotted line, or solid line). Therefore, when the eccentricity of each of the drills 24, 28 is large, as shown in the graph A (indicated by the solid line in Fig. 6), it is about 18 。. The interval detects the angular position of the minimum radius A1 and the maximum radius A2. Further, when the anger of each of the reamer 24, 28 is small, as shown in Fig. 6 (indicated by a one-dot chain line in Fig. 6), it is about 180. The interval between the minimum radius B1 and the maximum radius B2 is detected. In the control unit 72, the minimum half #Al, the maximum radius A2, or the minimum radius B1 and the maximum radius B2 are detected by the operation. ~36〇. At any angular position, the mapping data is generated across the whole week according to the above measurement data, and the mapping data is memorized in the database of the memory 73. Further, since the maximum radius differs depending on the amount of eccentricity of each of the drills 24 and 28, the depth of the stripe-like defect generated on the inner peripheral surface of the through hole 5 when the drill is pulled out after the hole processing is performed. There will be changes. When the depth of the stripe-shaped defect exceeds a certain depth, the possibility of fracture caused by thermal stress is raised. 159553.doc -15- 201223727 High 0 [The role of thermal stress] Figure 7A is used to illustrate the calcination step of the mother glass substrate A picture of one example. As shown in FIG. 7A, in the calcination step, the mother glass substrate G (the mother substrate 200 shown in FIG. 5) is usually placed on the upper surface of the transfer susceptor 220 along the longitudinal direction of the mother glass substrate G. It is transported through the heating furnace 230. The inside of the heating furnace 230 is cooled to a specific temperature after being heated to a high temperature of about 50 (TC to 60 CTC). As a heating method of the heating furnace 230, the heating environment can be utilized by using a heater provided on the furnace wall of the heating furnace 230. The method of heating the mother glass substrate by gas. In the heating furnace 230, the heated mother glass substrate is taken out from the heating furnace 230 and cooled after the calcination step is completed. Fig. 7B is for explaining the calcination step and the cooling step. A diagram of the thermal stress acting on the through hole of the mother glass substrate. As shown in FIG. 7B, the tensile stress acting on the inner peripheral surface of the through hole 5 in the calcination step and the cooling step is in the direction of the mother glass substrate G. The reason for the long side direction (X direction) is that the temperature distribution of the mother glass substrate in the normal firing step and the cooling step is higher in the portion of the mother glass substrate G, and the temperature in the peripheral portion of the mother glass substrate G is higher. The case of becoming lower becomes a deformation which causes the through hole 5 to collapse in the short side direction (γ direction) of the mother glass substrate G. Actually, it is confirmed by experiments that when the mother glass substrate G is warmed The degree distribution is higher in the central portion of the mother glass substrate G, and the deformation caused by the tensile stress Ft acting on the inner peripheral surface of the through hole 5 is higher when the temperature of the peripheral portion of the mother glass substrate is lower. The hole 5 has the largest direction in the direction of the ¥, and the smallest in the X side 159553.doc • 16 · 201223727. The result of the self-test is that the area α (the central angle range of the area α = approximately 40 degrees) in Fig. 7B The range shown is the stress concentration region where the large deformation caused by the tensile stress Ft is generated, and the range of the region β (the central angle range of the region β = about 100°) is a small deformation caused by the tensile stress Ft. The safe area, that is, in FIG. 7B, the angle formed by the straight line passing through the center of the through hole 5 and the short side direction (Y direction) of the mother glass substrate G is -40° to +40° in plan view. The area on the circumference of the through hole 5 where the straight line forms the intersection is the angle formed by the area α' and the straight line passing through the center of the through hole 5 and the longitudinal direction (X direction) of the mother glass substrate 为 is _50. The area on the circumference of the through hole 5 where the straight line forms an intersection is an area In addition, as the special 14 of the glass, it is known that the compressive strength of the compressive stress is strong, but the compressive strength to the tensile stress is weak. Therefore, the inside of the through hole 5 is taken out when the drill is pulled out. When the stripe-shaped defect generated on the circumferential surface is generated in the stress concentration region, the fracture caused by the tensile stress is apt to occur. Therefore, the deformation due to the tensile stress Ft acting on the inner circumferential surface of the through hole 5 is caused. Distribution: setting: a safety zone, which is not easy to pull out of the drill, causes breakage due to streaky defects generated on the inner circumferential surface of the through hole 5, and a stress concentration region, which is easy to pull out the drill The breakage due to the streaky defect generated on the inner peripheral surface of the through hole 5 is generated; the stripe-like defect can be prevented from being generated by the stress concentration region (region α) of the inner peripheral surface of the through hole 5 A fracture caused by a defect. That is, from the viewpoint of preventing breakage, it is preferable that the stripe-like defects generated on the inner peripheral surface of the through-hole 5 on the mother glass substrate exist in the following regions. 159553.doc -17- 201223727 The stripe-shaped defect is preferably present at an angle of ±50 between the line parallel to the long side of the mother glass substrate and the line passing through the center of the through hole. The inner peripheral surface of the through hole 5 is preferably ±25. The inner peripheral surface of the through hole 5 is preferably ±10. The area of the inner peripheral surface of the through hole 5 within. Usually, the mother glass substrate and the rear glass substrate have the positional relationship shown in Fig. 5. Therefore, from the viewpoint of preventing breakage, it is preferable that the stripe-like defects generated on the inner peripheral surface of the through-hole 5 on the back glass substrate exist in the following regions, and the existence of the stripe-shaped defect is preferably parallel to the back glass. The angle formed by the line of the short side of the substrate and the line passing through the center of the through hole is soil 5 〇. The inner peripheral surface of the through hole 5 is preferably ±25. The area of the inner peripheral surface of the through hole 5 is particularly preferably ±1〇. The area of the inner peripheral surface of the through hole 5 within. [Control Processing of Hole Cutting Process] Fig. 8 is a flow chart for explaining control processing of the hole drilling process performed by the control device. In S11 of FIG. 8, if the control device 72 confirms that the base glass 20 and the clamping table 18 of the drilling processing apparatus 10 are loaded with the mother glass substrate G and held at a specific position, the control unit 72 enters the second hole, and the measurement is formed in each of the drilling holes. The grinding portions 12 at the front ends of the tubes 24 and 28 are outside the circumference. Furthermore, the measurement method irradiates the laser light to the periphery of the grinding portion 12 from each of the laser interferometers 62, 64 as described above, and the measurement distance corresponds to every other specific angle of the respective drills 24, 28. The distance of the position of the moving angle is stored, and the measured value is memorized in the memory. In the next S13, in synchronization with the respective drills 24, 28 at a specific angle (for example, 5 Lu), the grinding portion is calculated according to the measured values of the respective laser detectors 62 = 159553.doc 201223727. The distance of the irradiation position of 120, when the measurement data of the radius of the drill of the irradiation position is obtained, for example, the measurement data of the radius of the drill corresponding to the rotation angle of each drill shown in FIG. 6 is produced. The obtained data map is stored in the memory 73. That is, the first step from S 12 to the position of the maximum radius at which the aligner is rotated is detected. Further, referring to the range of the safety region in the circumferential direction of the hole 5 shown in FIG. 7B, the hole is set according to the action direction of the tensile stress caused by the thermal stress acting on the mother glass substrate G. The maximum half control position (step 4) is such that the maximum radial position of the drill is processed into a safe area of the through hole formed in the mother glass during processing. Then, the process proceeds to S14, and the rotation angle (the circumferential direction address of the maximum radius position) of the maximum radial position of each of the drills 24 and 28 that has been set is extracted from the data map and stored in the memory 73 (step 5). ). In the next S15, the respective drills 24 and 28 are fed to the side of the mother glass substrate to start the drilling (see the flow 2 of Fig. 2B). If the opening of the mother glass substrate G is started by the respective drills 24, 28, it is checked in S16 whether or not the depth of the hole 4' on the upper surface side reaches the previously set machining depth H1. In S16, after the depth of the upper hole 40 reaches the machining depth H1, the process proceeds to S17, and the rotation of the first piercer 24 is stopped (second step). Further, after the front end of the first reamer 24 reaches the specific depth of the mother glass substrate G, the rotation of the first reamer 24 can be stopped, or the rotation speed of the first reamer 24 can be slowed down to 1 Low speed rotation of r/mjn~5 r/min. In the next S18, the stop angle position of the rotational direction of the rotary shaft 44 is read by the detection signal of the second motor rotation detector 74, 159553.doc -19-201223727. Then, the stop angle position (the circumferential direction address of the stop position) of the rotary shaft 44 detected by the first motor rotation detector 74, that is, the stop angle position of the first drill 24, is entered in S19'. The data map stored in the database of the memory 73 is checked to check whether the maximum radius position (the circumferential direction address of the maximum radius) of the first reamer 24 enters the inner circumferential surface of the through hole 5. Within the range of the region (region β) (step 6). When the maximum radial position of the first piercer 24 enters the range of the stress concentration region (region α) of the inner circumferential surface of the through hole 5 in S19 (in the case of Ν〇), the process proceeds to S20, and the process proceeds directly to S20. The rotation shaft 44 of the first motor 42 to which the first piercer 24 is coupled is rotated by, for example, an angle 80. (Step 3) Further, the angle of rotation at this time is not limited to 80. The maximum radius position of the first reamer 24 can be moved to the safe area (area β) as long as it is greater than the angle of the central angle of the area α = 40°. Then, the processing of the above-described S17 to S19 is repeated. In the above S19, the maximum radial position of the first reamer 24 enters the inner circumferential surface of the through hole 5 at the time when the rotation of the first motor 42 is stopped. In the case of the safe area (area β) (in the case of YES), the motor control processing of the above S20 is not performed, and the process proceeds to S21. In the above S21, the first motor 42 is raised by the upper linear guide rail 50, and the first piercer 24 is pulled upward from the upper hole 40 of the mother glass substrate G (third step: see the flow 3 of Fig. 2C). Thereby, it is possible to prevent the streaky defect when the first piercer 24 is pulled out from being generated in the stress concentration region (area α) of the inner circumferential surface of the through hole 5. Further, the first reamer 24 is preferably pulled out at a speed of, for example, 10 mm/s to 40 mm/s. 159553.doc -20- 201223727 In the next S22, it is checked whether the depth of the hole 26 below the lower surface side reaches the preset machining depth H2. In S22, after the depth of the lower hole 26 reaches the machining ice degree H2 (refer to the flow 4 of Fig. 2D), the process proceeds to S23, and the rotation of the second hole drilling tool 28 is stopped (second step). Further, after the front end of the second reamer 28 reaches a certain depth of the mother glass substrate G, the rotation of the second reamer 28 can be stopped or the rotation speed of the second reamer 28 can be slowed down to ir. /min~5 r/min low speed rotation. In the next S24, the stop angle position of the rotary shaft 32 is read by the detection signal of the second motor rotation detector 75. Then, the position of the stop angle of the rotary shaft 32 detected by the second motor rotation detector 75, that is, the stop angle position of the second drill 28 and the above-described memory of the suffix 73 are entered. The data map in the database is checked to check whether the maximum radial position of the second piercer 28 enters the safe area (region β) of the inner circumferential surface of the through hole 5 (step 6). When the maximum radial position of the second piercer 28 enters the range of the stress concentration region (area α) of the inner circumferential surface of the through hole 5 in S25 (in the case of no), the process proceeds to S26 'to make direct connection. The rotating shaft 32 of the second motor 30 having the second piercer 28 is rotated, for example, by 80. (Step 3). Further, the angle of rotation at this time is not limited to 80°' as long as it is larger than the central angle range of the area α = 4 〇. The angle ' can move the maximum radius position of the second reamer 28 to the safe area (area β). Thereafter, the above processing of S23 to S25 is repeated. Further, in the above S25, at the time when the rotation of the second motor 30 is stopped, the maximum radial position of the second piercer 28 enters the safe area (region p) of the inner peripheral surface of the through hole 5, 159553. Doc -21· 201223727 In the range (in the case of YES), the motor control processing of the above S26 is not performed, and the process proceeds to S27. In the above S27, the second motor 30 is lowered by the lower linear guide 38, and the second piercer 28 is pulled downward from the hole 26 of the mother glass substrate g (third step: see the flow 5 of Fig. 2E). Thereby, it is possible to prevent the streaky defect when the second piercer 28 is pulled out from being generated in the stress concentration region (region α) of the inner circumferential surface of the through hole 5. Further, the second reamer 28 is preferably pulled out at a speed of, for example, 10 mm/s to 40 mm/s. In the next S28, it is checked whether the number of processing of the through holes 5 has been completely processed. For example, when the mother substrate 2 is corresponding to the six screen sizes as shown in FIG. 5, the through hole 5 is processed at six positions, and when the number of the through holes 5 is less than 6, the number of processing is less than 6 (NO). In the case of the case, the control processing of S15 to S28 is repeated until the through hole 5 is processed at six positions. Further, in S28, when the number of processing of the through-holes 5 has been completely processed (YES at the time of the f-shape), the process proceeds to S29, and the mother glass substrate G whose hole-cutting process has been completed is from the stage of the hole-growing device 10. The clamping table 18 is taken out and the unprocessed new mother glass substrate 200 is held on the platform 2 and the clamping table 18. Further, the replacement operation of the mother glass substrate 200 is performed by the mother glass substrate transfer robot. In the next S30, it is checked whether the specified reamer replacement period is reached based on the number of times the reamer is used or the boring machine processing time. When it is checked in S30 that the currently used drills 24, 28 have reached the reaping period (YES), the replacement of the reamer 24, 28 is performed. Then, in S3 1, the mapping data of the respective reameres 24, 28 stored in the memory 73 is deleted. When the replacement of each of the drills 24, 28 has been performed 159553.doc -22-201223727, the control process from su is performed next. Therefore, the maximum radial position of each of the four (4) devices 24 and 28 is measured, and after the processing, the rotation of each of the drills 24 and 28 is stopped, and the stop position (circumferential address) obtained from the detection signals of the respective motors is entered into the through position. The safety area of the inner circumferential surface of the hole 5 (in the case of the area, by pulling out the respective reamer 24, 28 from the through hole 5, it is possible to prevent the stripe-like defect from being generated in the through hole 5 when the hole cutter 28 is pulled out The stress concentration region (region ") of the inner peripheral surface can prevent the fracture of the mother glass substrate G caused by the thermal stress in the calcination step. Further, the present invention is described in detail with reference to specific embodiments, but the practitioner understands Various modifications or changes can be added as long as they do not depart from the spirit and scope of the present invention. The present application is based on the present application, which is hereby incorporated by reference. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic structural view for explaining an embodiment of a mother glass substrate opening processing apparatus of the present invention. Fig. 2A to Fig. 2E show the flow of each step of the hole drilling process. Fig. 3 is a view showing the shape of the front end of the reamer enlarged. Fig. 4 is a view showing a laser interferometer for measuring the maximum radial position of the outer periphery of the front end of each reamer. Fig. 5 is for explaining the opening. A plan view of the mother glass substrate of the hole processing. Fig. 7A shows the remaining amount of the rotational position of the drill and the radius of the outer periphery of the front end. 159553.doc •23- 201223727 Figure 7A is used to illustrate the forging of the mother glass substrate. Figure 7B is a diagram for explaining the thermal stress acting on the through hole of the mother glass substrate. Fig. 8 is a flow chart for explaining the control processing of the hole drilling process performed by the control device. Description 10 10 mother glass substrate opening device 12 clamping device 14 lower hole processing device 16 upper hole processing device 18 clamping table 20 platform 22 clamping plate 24 first drilling device 26 lower hole 28 second drilling device 30 second motor 32, 44 Rotary shaft 34, 46 Retainer 36 Lower motor mounting part 38 Lower side linear guide 40 Upper hole 42 First motor 48 Upper motor mounting part 159553.doc •24· 201223727 50 60 62 64 66 70 72 73 74 75 76 77 120 121 122 124 130 200 210 220 230 Upper direct acting guide drill measuring unit 1st laser interferometer 2nd laser interferometer laser position detector drill rotating stop position control unit control unit Memory first motor rotation detector second motor rotation detector first motor drive second motor drive grinding part front end chamfer outer peripheral part handle mother glass substrate display area transfer base heating furnace 159553.doc -25-