201219142 <« 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種照射雷射光而對被加工物進行加工之 雷射加工方法及使用該雷射加工方法之雷射加工裝置。 【先前技術】 . 作為照射脈衝雷射光而對被加工物進行加工之技術（以 下亦僅稱為雷射加工或雷射加工技術），已知業已存在有 各種（例如參照專利文獻1至專利文獻4)。 專利文獻1中揭示之内容，係一種分割被加工物槽模 時，利用雷射剝蝕沿著分割預定線形成剖面、字形之槽（斷 開槽）’並以此槽為起點而分割模具之手法。另一方面’ 專利文獻2中揭示之内容，係一種將散焦狀態之雷射光沿 著被加工物（被分割體）之分割預定線照射’而於被照射區 域產生結晶狀態較周圍更潰散之剖面大致V字形之融解改 質區域（變質區域），並以此融解改質區域之最下點為起點 而分割被加工物之手法。 使用專利文獻1及專利文獻2所揭示之技術而形成分割起 點時’為了良好地進行後面之分割，重要之處均為沿著雷 射光之掃描方向即分割預定線方向而形成形狀均勻之V字 * 形剖面（槽剖面或變質區域剖面）。作為應對此之方法，例 如有以每1脈衝之雷射光之被照射區域（光束點）前後重複之 方式’控制雷射光之照射。201219142 <« VI. Description of the Invention: [Technical Field] The present invention relates to a laser processing method for processing a workpiece by irradiating laser light and a laser processing apparatus using the laser processing method. [Prior Art] As a technique for processing a workpiece by irradiating pulsed laser light (hereinafter also referred to simply as laser processing or laser processing technology), various types are known (for example, refer to Patent Document 1 to Patent Literature). 4). The content disclosed in Patent Document 1 is a method of forming a cross-section, a groove (cross-groove) of a cross-section along a line to be divided by a laser ablation, and dividing the mold by using the groove as a starting point. . On the other hand, the content disclosed in Patent Document 2 is that a laser beam in a defocused state is irradiated along a predetermined line of division of a workpiece (divided body), and a crystal state is generated in the irradiated region, which is more collapsed than the surroundings. The section is roughly V-shaped to melt the modified region (metamorphic region), and the method of dividing the workpiece by using the lowest point of the modified region as a starting point. When the division starting point is formed by the techniques disclosed in Patent Document 1 and Patent Document 2, in order to perform the subsequent division well, it is important to form a V shape having a uniform shape along the scanning direction of the laser light, that is, the direction of the division line. * Shape profile (slot profile or metamorphic zone profile). As a method to be applied thereto, for example, the irradiation of the laser light is performed in such a manner that the irradiated region (beam spot) of the laser light per pulse is repeated before and after.
例如’將雷射加工之最基本之參數重複頻率（單位kHZ) 設為R’將掃描速度（單位mm/sec)設為V時，兩者之比V/R 157901.doc 201219142 點之中心間隔’於專利文獻1及專利文獻2所揭示 之技術中，為了使光束點彼此產生重疊，“ v/R為】μηι 以下之條件進行雷射光之照射及掃描。 ^外’於專利文獻3中揭示有如下態樣：於表面具有積 層Ρ之基板内部使聚光點對準而照射雷射光，藉此於基板 内Ρ形成改質區域’並將此改質區域設為切斷起點。 而且’於專利文獻4中⑽*有如下態樣：相對於1個分離 線而重複多次雷射光掃描，於深度方向之上下形成於分離 線方向上連續之槽部及改質部、以及於分離線方向上不連 續之内部改質部。 另一方面，於專利文獻5中揭示有一種使用脈寬為psec 級之超短脈衝雷射光之加工技術，且揭示有如下態樣：藉 由調整脈衝雷射光之聚光點位置，形成自被加工物（板體） 之表層部位遍及表面之微小龜裂簇生而成之微小熔痕，從 而形成由該等熔痕連接而成之線狀易分離區域。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2004-9139號公報 [專利文獻2]國際公開第2006/〇62〇17號 [專利文獻3]日本專利特開2007-8：3309號公報 [專利文獻4]曰本專利特開2008-98465號公報 [專利文獻5]曰本專利特開2005-271563號公報 【發明内容】 [發明所欲解決之問題] 157901.doc 201219142 利用雷射光形成分割起點後藉由斷開器進行分割之手 法’與先前使用之機械切斷法即金剛石劃線相比，於自動 性·高速性·穩定性·高精度性方面更有利。 然而，藉由先前手法利用雷射光形成分割起點時，將不 . 可避免地於照射雷射光之部分形成所謂之加工痕（雷射加 k 工痕）。所謂加工痕，係指照射雷射光後材質或構造與照 射則相比發生變化之變質區域。加工痕之形成通常會對經 分割之各被加工物（分割素片）之特性等帶來惡劣影響，因 此較佳為儘可能抑制。 例如，藉由如專利文獻2揭示之先前雷射加工，將由藍 寶石等具有硬脆性且光學透明之材料而成之基板上形成 led構造等發^件構造之被加卫物，以晶片單位分割所 得之發光元件之邊緣部分（分割時受到雷射光照射之部 分）’連續形成有寬度數μϊη左右、深度數μ1η〜數十左右 之加工痕。該加工痕會吸收發光元件内部產生之光，存在 使元件之光掠出效率降低之問題。於使用折射率高之藍寶 石基板之發光元件構造之情形時該問題尤其顯著。 本發明之發明者經過反覆銳意研究後發現：對被加工物 照射雷射光而形成分割起點時，藉由利用該被加工物之劈 開性或裂開性，可適宜地抑制加工痕之形成。此外，發現 該加工使用超短脈衝之雷射光時較為適宜。 專利文獻1至專利文獻5中，關於利用被加工物之劈開性 或裂開性而形成分割起點之態樣，並未進行任何揭示。 又，當利用雷射光形成分割起點時，藉由雷射光照射而 157901.doc 201219142 形成之被加工區域（專利文獻〗之分割槽或專利文獻2之變 質區域等）於被分割體厚度方向上形成之深度越深，則之 後垂直於被分割體表面進行分割時之良率越高。然而存 在如下問題：當如具有上述發光元件構造之被加工物般， 於藍寶石等具有硬脆性之基板上形成有金屬薄膜層或半導 體層等異質材料層難以於厚度方向上足夠深地形成被 加工區域。 本發明係鑒於上述問題研究而成者，其目的在於提供一 種能夠抑制加工痕形成、並且對於基板上形成有異質材料 層之被分割體能夠形成更切實地實現其分割之分割起點之 破分割體之加工方法、及該加工方法所使用之雷射加工裝 置。 [解決問題之技術手段] 為了解決上述問題，第1技術方案之發明係一種雷射加 工裝置，其特徵在於包含出射第j雷射光之第丨光源、出射 第2雷射光之第2光源、及載置被加工物之載物台；自上述 第2光源出射之上述第2雷射光係脈寬為psec級之超短脈衝 光，當上述被加工物係於基底基板上形成有異質材料層之 附有異質材料之基板時，藉由於使上述載物台向第丨方向 移動期間，進行第丨預加工及第丨正式加工，而於上述被加 工物上形成沿著上述第丨加工預定線之用於分割之起點， 上述第1預加工係藉由將上述第1雷射光沿著上述被加工物 之第1加工預定線照射，而使上述基底基板於上述第丨加工 預定線之位置處露出，上述第丨正式加工係藉由於上述基 157901.doc 201219142 底基板之露出部分，以離散形成各單位脈衝光之被照射區 域之方式照射上述第2雷射光，而使上述被照射區域彼此 之間產生上述基底基板之劈開或裂開。 第2技術方案之發明係如第丨技術方案之雷射加工裝置， . 其中自上述第1光源出射之上述第1雷射光係脈寬為psec級 • 之超短脈衝光；上述雷射加工裝置更包含第1物鏡系統， 該第1物鏡系統設置於自上述第丨光源直至上述載物台之上 述第1雷射光之光路上，可對上述第丨雷射光之焦點位置進 仃調整；將上述第1雷射光之焦點位置設定於上述被加工 物之表面之上方，並使上述第2雷射光之焦點位置與上述 基底基板之露出部分一致。 第3技術方案之發明係如第2技術方案之雷射加工裝置， 其中更包含第2物鏡系統，該第2物鏡系統設置於自上述第 2光源直至上述載物台之上述第2雷射光之光路上，可對上 述第2雷射光之焦點位置進行調整；於使上述載物台向第】 =向移動期間，形成沿著上述第丨加工預定線之上述用於 分割之起點之後，於使上述载物台向第2方向移動期間， 藉由進仃第2預加工及第2正式加工，而於上述被加工物上 形成沿著上述第2加工預定線之用於分割之㈣，上述第之 預加工係藉由將上述第2雷射光之焦點位置設定於上述被 加二物之表面之上方，並使上述第1雷射光之焦點位置與 上述基底基板之露出部分—致，於該狀態下將上述第2雷 射光&著上述被加工物之第2加工預定線照射，藉此使上 述基底基板於上述第2加工預定線之位置處露出；上述第2 157901.doc 201219142 …工係藉由於上述基底基板之露出部分，以離散形成 各單位脈衝光之被照射區域之方式照射上述第丨雷射光， 而使上述被照射區域彼此之間產生上述基底基板之劈開或 裂開。 第4技術方案之發明係如第丨技術方案之雷射加工裝置， 其中於使上述載物台向第i方向移動期間，形成沿著上述 第1加工預定線之上述用於分割之起點之後，於使上述載 物台向第2方向移動期間，進行第2預加工及第2正式加 工，而於上述被加工物上形成沿著上述第2加工預定線之 用於分割之起點，上述第2預加工係藉由將上述第丨雷射光 沿著上述被加工物之第2加工預定線照射，而使上述基底 基板於上述第2加工預定線之位置處露出；上述第2正式加 工係藉由於上述基底基板之露出部分，以離散形成各單位 脈衝光之被照射區域之方式照射上述第2雷射光，而使上 述被照射區域彼此之間產生上述基底基板之劈開或裂開。 第5技術方案之發明係如第4技術方案之雷射加工裝置， 其中自上述第1光源直至上述載物台之光路於途中分支為 兩個；於上述第1預加工與上述第2預加工中，以不同光路 將上述第1雷射光照射至上述被加工物。 第6技術方案之發明係如第4或5技術方案之雷射加工裝 置，其中自上述第1光源出射之上述第丨雷射光係脈寬為 psec級之超短脈衝光；上述雷射加工裝置更包含第丨物鏡 系統，該第1物鏡系統設置於自上述第丨光源直至上述載物 台之上述第1雷射光之光路上，可對上述第丨雷射光之焦點 157901.doc 201219142 位置進行調整，·將上述第丨雷射光之焦點位置設定於上述 被加工物之表面之上方，並使上述第2雷射光之焦點位置 與上述基底基板之露出部分一致。 第7技術方案之發明係如第3至5技術方案中任一技術方 • 案之雷射加工裝置，其中上述第1方向與上述第2方向係彼 . 此相反之朝向。 第8技術方案之發明係一種雷射加工裝置，其特徵在於 包含發出雷射光之至少一個光源、及載置被加工物之載物 台；且作為上述雷射光可選擇性照射預加工用雷射光與正 式加工用雷射光；上述正式加工用雷射光係脈寬為_級 之超短脈衝光；上述載物台可於第丨方向與第2方向上移 動；當上述被加工物係於基底基板上形成有異質材料層之 附有異質材料之基板時，藉由進行預加工及正式加工，而 於上述被加工物形成用於分割之起點，上述預加工係藉由 一邊使上述载物台向上述第丨方向移動，一邊照射上述預 加工用雷射光，而使上述基底基板於被照射區域露出•·上 述正式加工係藉由以上述正式加工用雷射光之各單位脈衝 光之被照射區域#上述基底基板之露出部分離散形成之方 式，一邊使上述載物台向上述第2方向移動一邊將上述正 式加工用雷射光照射至上述被加工物，而使上述被照 域彼此之間產生上述基底基板之劈開或裂開。 ^ 第9技術方案之發明係如第8技術方案之雷射加工裝置， 其中上述至少-個光源係能夠藉由改變照射條件而選擇性 出射上述預加工用雷射光與上述正式加工用雷射光之單一 157901.doc 201219142 光源。 第1 〇技術方案之發明係如第9技術方案之雷射加工裝 置，其中更包含物鏡系統，該物鏡系統係設置於自上述光 源直至上述載物台之上述雷射光之光路上，可對上述雷射 光之焦點位置進行調整；於上述預加工期間將上述預加工 用雷射光之焦點位置設定於上述被加工物之表面之上方， 於上述正式加工期間，使上述正式加工用雷射光之焦點位 置與上述基底基板之露出部分一致。 第11技術方案之發明係如第8技術方案之雷射加工裝 置’其中上述至少一個光源係出射上述預加工用雷射光之 第1光源與出射上述正式加工用雷射光之第2光源；於載置 有上述被加工物之上述載物台向上述第丨方向移動期間， 自上述第1光源出射上述預加工用雷射光而進行上述預加 工；於載置有上述被加工物之上述載物台向上述第2方向 移動期間，自上述第2光源出射上述正式加工用雷射光而 進行上述正式加工》 第12技術方案之發明係如第丨丨技術方案之雷射加工裝 置，其中更包含光路切換機構，該光路切換機構可對自上 述第1光源直至上述載物台之第i光路上之上述預加工用雷 射光之照射、與自上述第2光源直至上述載物台之第2光路 上之上述正式加工用雷射光之照射進行切換；且自上述先 路切換機構直至上述載物台為止之上述第！光路與第2光路 為共通。 第13技術方案之發明係、如第1至5、8至12技術方案中任 157901.doc 201219142 一技術方案之雷射加工裝置，其中於上述被加工物上形成 上述用於分割之起點時，利用不同之上述單位脈衝光形成 之至V兩個被照射區域係以於上述被加工物之容易劈開或 裂開方向上相鄭之方式形成。 第14技術方案之發明係如第13技術方案之雷射加工裝 置，其中所有之上述被照射區域係沿著上述被加工物之容 易劈開或裂開方向形成。 第15技術方案之發明係如第丨至5、8至12技術方案中任 -技術方案之雷射加工裝置，其中於上述被加工物上形成 上述用於分割之起點時，上述被照射區域係於相對於上述 被加工物之不同的兩個容易劈開或裂開方向為等價之方向 上形成。 第16技術方案之發明係如第8至12技術方案中任一技術 方案之雷射加工裝置’纟中於上述被加工物上形成上述用 於分割之起點時，利用不同之上述單位脈衝光之至少兩個 被照射區域之形成係以相對於上述被加工物之不同的兩個 上述容易劈開或裂開方向交替、且 v又货且上述至少兩個被照射區 域於上述容易劈開或裂開方向上相鄰的方式進行。 第17技術方案之發明係一種被加工物之加工方法，其特 徵在於其係、用以於基底基板上形成有異質材料層之附有異 質材料之基板之被加工物上形成分割起點者；且其包含了 載置步驟，其係將被加工物載置於載物台上；第1預加工 步驟’其係藉由自第i光源將第巧射光沿著上述被加工物 之第1加工預定線照射，而使上述基底基板於上述第】加工For example, 'The most basic parameter repetition frequency (in kHZ) for laser processing is set to R'. When the scanning speed (unit: mm/sec) is set to V, the ratio between the two is V/R 157901.doc The center interval of 201219142 points In the techniques disclosed in Patent Document 1 and Patent Document 2, in order to overlap the beam spots, the irradiation and scanning of the laser light are performed under the condition that "v/R is μηηι or less." There is a case where the inside of the substrate having the laminated enamel on the surface is aligned to illuminate the laser light, thereby forming a modified region in the substrate, and the modified region is set as the cutting starting point. In (10)* of Patent Document 4, the laser light scanning is repeated a plurality of times with respect to one separation line, and the groove portion and the reforming portion which are continuous in the direction of the separation line are formed in the depth direction, and in the direction of the separation line. On the other hand, Patent Document 5 discloses a processing technique using ultrashort pulsed laser light having a pulse width of psec level, and discloses the following aspect: by adjusting pulsed laser light Convergence point position Forming a micro-melt formed by the surface cracks of the surface of the workpiece (plate body) over the surface, thereby forming a linear separation region formed by the melt marks. [Prior Art] [Patents [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-9139 [Patent Document 2] International Publication No. 2006/〇62〇17 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2007-8:3309 [Patent Literature] [Patent Document 5] [Patent Document 5] Japanese Patent Laid-Open Publication No. 2005-271563 [Summary of the Invention] [Problems to be Solved by the Invention] 157901.doc 201219142 After forming a division starting point by using laser light The method of dividing by the disconnector is more advantageous in terms of autonomy, high speed, stability, and high precision than the previously used mechanical cutting method, that is, the diamond scribing. However, by using the prior method, the mine is utilized. When the light is used to form the starting point of the segmentation, it is not possible to form a so-called process mark (laser plus k work mark) in the portion irradiated with the laser light. The so-called process mark means that the material or structure is irradiated with the laser light compared with the irradiation. Change The metamorphic region. The formation of the processing marks usually has a bad influence on the characteristics of the divided workpieces (segmented plain sheets), and is therefore preferably suppressed as much as possible. For example, as disclosed in Patent Document 2 Laser processing, which is formed by a hard-brittle and optically transparent material such as sapphire, which forms a structure of a light-emitting element such as a led structure, and is divided into a wafer unit to divide the edge portion of the light-emitting element. The portion irradiated with the light is "continuously formed with a processing mark having a width of about μϊη and a depth of about μ1η to several tens. The processing mark absorbs light generated inside the light-emitting element, and there is a problem that the light-pumping efficiency of the element is lowered. This problem is particularly remarkable in the case of using a light-emitting element structure of a sapphire substrate having a high refractive index. As a result of intensive research, the inventors of the present invention have found that when the workpiece is irradiated with laser light to form a starting point of separation, the formation of the processing mark can be suitably suppressed by utilizing the openness or cleavage property of the workpiece. In addition, it has been found that the processing is preferably performed using ultrashort pulsed laser light. In Patent Document 1 to Patent Document 5, the aspect in which the starting point of the division is formed by the splitting property or the cleavage property of the workpiece is not disclosed. Further, when the division starting point is formed by the laser light, the processed region formed by the laser light irradiation 157901.doc 201219142 (the dividing groove of the patent document or the modified region of the patent document 2) is formed in the thickness direction of the divided body. The deeper the depth, the higher the yield after segmentation perpendicular to the surface of the segmented body. However, there is a problem that a heterogeneous material layer such as a metal thin film layer or a semiconductor layer is formed on a substrate having a hard brittleness such as sapphire as it is a workpiece having the above-described light-emitting element structure, and it is difficult to form a deep enough in the thickness direction to be processed. region. The present invention has been made in view of the above problems, and it is an object of the present invention to provide a broken body capable of suppressing the formation of a process mark and forming a divided starting point for realizing the division of the divided body formed on the substrate. The processing method and the laser processing apparatus used in the processing method. [Means for Solving the Problems] In order to solve the above problems, the first aspect of the invention provides a laser processing apparatus including a second light source that emits the jth laser light, a second light source that emits the second laser light, and a stage on which the workpiece is placed; the second laser light emitted from the second light source has an ultrashort pulse light having a pulse width of psec, and the workpiece is formed on the base substrate with a layer of a heterogeneous material. When the substrate of the heterogeneous material is attached, the second stage is processed along the second predetermined processing line on the workpiece by performing the second pre-processing and the second main processing while moving the stage in the second direction. The first pre-processing is performed by irradiating the first laser beam along the first planned line of the workpiece to expose the base substrate at a position of the second planned line The second processing is performed by irradiating the exposed portion of the substrate 157901.doc 201219142 with the exposed portion of the substrate 157901.doc 201219142, thereby illuminating the irradiated region of each unit of pulsed light. So that the irradiated region generating cleavage or cracking of the base substrate to each other. According to a second aspect of the invention, in the laser processing apparatus of the first aspect, the first laser light emitted from the first light source has an ultrashort pulse light having a pulse width of psec level; and the laser processing apparatus Furthermore, the first objective lens system is provided, and the first objective lens system is disposed on the optical path of the first laser beam from the second light source to the stage, and can adjust the focus position of the first laser light; The focus position of the first laser light is set above the surface of the workpiece, and the focus position of the second laser light is aligned with the exposed portion of the base substrate. According to a third aspect of the invention, in the laser processing apparatus of the second aspect, the second objective lens system further includes: the second objective light system is disposed from the second light source to the second laser light of the stage Adjusting a focus position of the second laser beam on the optical path; and forming a starting point for dividing along the second planned line of the line while moving the stage to the ith direction; During the movement of the stage in the second direction, the second pre-machining and the second main processing are performed, and (4) for dividing along the second planned line is formed on the workpiece, the The preprocessing is performed by setting a focus position of the second laser light above a surface of the object to be added, and causing a focus position of the first laser light to be exposed to an exposed portion of the base substrate. And irradiating the second laser beam with the second processing target line of the workpiece to expose the base substrate at a position of the second planned line; the second 157901.doc 201219142 ... Since the exposed portion of the base substrate to form the first discrete Shu laser beam irradiated area of light irradiated per unit pulse, the generation of the base substrate cleavage between the irradiated area with each other or split. According to a fourth aspect of the invention, in the laser processing apparatus of the first aspect of the invention, after the stage is moved in the i-th direction, the starting point for dividing along the first planned line is formed. During the movement of the stage in the second direction, the second pre-machining and the second main processing are performed, and a starting point for dividing along the second planned line is formed on the workpiece, and the second The pre-processing is performed by irradiating the second laser light along the second planned line of the workpiece to expose the base substrate at a position of the second planned line; the second processing is due to The exposed portion of the base substrate is irradiated with the second laser light so as to discretely form the irradiated region of each unit pulsed light, and the base substrate is cleaved or split between the irradiated regions. According to a fourth aspect of the invention, in the laser processing apparatus of the fourth aspect, the optical path from the first light source to the stage is branched in the middle; the first pre-processing and the second pre-processing The first laser light is irradiated onto the workpiece by a different optical path. The invention is directed to the laser processing apparatus according to the fourth or fifth aspect, wherein the first laser light emitted from the first light source has an ultrashort pulse light having a pulse width of psec; and the laser processing apparatus Furthermore, the first objective lens system is provided, and the first objective lens system is disposed on the optical path from the second light source to the first laser light of the stage, and can adjust the position of the focus 157901.doc 201219142 of the first laser light. And setting a focus position of the thirteenth laser light above the surface of the workpiece, and matching a focus position of the second laser light with an exposed portion of the base substrate. The invention is directed to the laser processing apparatus according to any one of the third aspect, wherein the first direction and the second direction are opposite to each other. According to a sixth aspect of the invention, a laser processing apparatus includes at least one light source that emits laser light and a stage on which a workpiece is placed, and selectively irradiates the laser light for preprocessing as the laser light. And the laser light for the formal processing; the laser light of the above-mentioned formal processing is an ultrashort pulse light having a pulse width of _ level; the stage is movable in the second direction and the second direction; when the workpiece is attached to the base substrate When a substrate having a heterogeneous material layer on which a heterogeneous material is formed is formed by pre-processing and main processing, a starting point for division is formed in the workpiece, and the pre-processing is performed by the substrate The substrate is irradiated with the pre-processing laser light to expose the base substrate to the irradiated region. The main processing is performed by the irradiated region of each unit of the laser light for the main processing laser. The exposed laser light for the main processing is moved while moving the stage in the second direction so that the exposed portion of the base substrate is discretely formed. To the above-described workpiece, generating the above-described cleavage of the base substrate is irradiated field or split between them. The invention of claim 8 is the laser processing apparatus according to the eighth aspect, wherein the at least one light source is capable of selectively emitting the pre-processing laser light and the main processing laser light by changing an irradiation condition Single 157901.doc 201219142 Light source. The invention of claim 1 is the laser processing apparatus of the ninth aspect, further comprising an objective lens system, wherein the objective lens system is disposed on the optical path from the light source to the laser light of the stage, Adjusting a focus position of the laser light; setting a focus position of the pre-processing laser light above the surface of the workpiece during the pre-processing period, and setting a focus position of the laser beam for the formal processing during the main processing period It conforms to the exposed portion of the base substrate. According to a thirteenth aspect of the invention, in the laser processing apparatus of the eighth aspect, the at least one light source emits the first light source for emitting the pre-processing laser light and the second light source that emits the laser light for the normal processing; During the movement of the stage in which the workpiece is placed in the second direction, the pre-processing laser light is emitted from the first light source to perform the pre-processing; and the stage on which the workpiece is placed is placed In the second direction of the movement, the laser light for the main processing is emitted from the second light source, and the laser processing is performed according to the second aspect of the invention. The optical path switching mechanism can irradiate the pre-processing laser light from the first light source to the i-th optical path of the stage and the second optical path from the second light source to the stage The above-described processing is performed by irradiation of laser light; and the above-described first step from the above-described prior switching mechanism to the above-described stage! The optical path is common to the second optical path. The invention of the thirteenth aspect of the present invention, wherein the laser processing apparatus according to the first aspect of the present invention, wherein the starting point for dividing is formed on the workpiece, The two irradiated regions formed by using the above-mentioned unit pulsed light are formed so as to be positive in the direction in which the workpiece is easily opened or split. The invention of claim 14 is the laser processing apparatus of the thirteenth aspect, wherein all of the irradiated regions are formed along a direction in which the workpiece is easily opened or split. A laser processing apparatus according to any one of claims 1 to 5, wherein the illuminating area is formed when the starting point for dividing is formed on the workpiece. It is formed in a direction which is equivalent to the above-mentioned workpiece and which is easy to split or split. According to a sixteenth aspect of the present invention, in the laser processing apparatus according to any one of the eighth aspect of the present invention, the above-mentioned unit pulse light is used when the starting point for dividing is formed on the workpiece. Forming at least two irradiated regions alternately in two easy-to-open or split directions with respect to the workpiece, and v and the at least two irradiated regions are in the above-mentioned easy splitting or splitting direction On the adjacent way. The invention of claim 17 is a method for processing a workpiece, which is characterized in that a starting point is formed on a workpiece on which a substrate of a heterogeneous material is formed on a base substrate with a substrate of a heterogeneous material; The method includes a mounting step of placing the workpiece on the stage; the first pre-processing step is performed by the first processing of the object to be processed by the ith light source. Wire irradiation, and the above-mentioned base substrate is processed in the above-mentioned
S 157901.doc 201219142 預疋線之位置處露出；第丨正式加工步驟，其係藉由於上 述基底基板之露出部分，以離散形成各單位脈衝光之被照 射區域之方式自第2光源照射脈寬為^“級之超短脈衝光 之第2雷射光，而使上述被照射區域彼此之間產生上述基 底基板之劈開或裂開；一邊使上述載物台向第丨方向移 動，一邊進行上述第1預加工步驟與上述第丨正式加工步 驟。 第18技術方案之發明係如第17技術方案之被加工物之加 工方法其中自上述第1光源出射之上述第1雷射光係脈寬 為psec級之超短脈衝光；藉由設置於自上述第丨光源直至 上述載物台之上述第丨雷射光之光路上之第丨物鏡系統，而 可調整上述第1雷射光之焦點位置；將上述第1雷射光之焦 點位置設定於上述被加工物之表面之上方，並使上述第2 每射光之焦點位置與上述基底基板之露出部分一致。 第19技術方案之發明係如第18技術方案之被加工物之加 工方法，其中藉由設置於自上述第2光源直至上述載物台 之上述第2雷射光之光路上之第2物鏡系統，而可調整上述 第2雷射光之焦點位置；上述加工方法更包含··第2預加工 步驟’其係藉由將上述第2雷射光沿著上述被加工物之第2 加工預定線照射’而使上述基底基板於上述第2加工預定 線之位置處露出；及第2正式加工步驟，其係藉由於上述 基底基板之露出部分，以離散形成各單位脈衝光之被照射 區域之方式照射上述第1雷射光，而使上述被照射區域彼 此之間產生上述基底基板之劈開或裂開；於使上述載物台 157901.doc • 12· 201219142 向第1方向移動期間，進行上述第丨預加工步驟及上述第1 式加工步驟而形成沿著上述第1加工預定線之上述用於 分割之起點後，將上述第2雷射光之焦點位置設定於上述 被加工物之表面之上方，並使上述第1雷射光之焦點位置 ^上述基底基板之露出部分一致，於該狀態下一邊使上述 載物台向第2方向移動，一邊進行上述第2預加工步驟與上 述第2正式加工步驟。 第20技術方案之發明係如第17技術方案之被加工物之加 工方法，其中更包含：第2預加工步驟，其係藉由將上述 第1雷射光沿著上述被加工物之第2加工預定線照射，而使 上述基底基板於上述第2加工預定線之位置處露出；及第2 正式加工步驟，其係藉由於上述基底基板之露出部分以離 散形成各單位脈衝光之被照射區域之方式照射上述第2雷 射光，而使上述被照射區域彼此之間產生上述基底基板之 劈開或裂開；於使上述載物台向第丨方向移動期間，進行 上述第1預加工步驟與上述第丨正式加工步驟而形成沿著上 述第1加工預定線之上述用於分割之起點後，一邊使上述 載物台向第2方向移動，一邊進行上述第2預加工步驟與上 述第2正式加工步驟。 第21技術方案之發明係如第2〇技術方案之被加工物之加 工方法，其中藉由將自上述第丨光源直至上述载物台之光 路於途中分支為兩個，而於上述第丨預加工步驟與上述第2 預加工步驟中，以不同光路將上述第丨雷射光照射至上述 被加工物。 157901.doc •13· 201219142 第22技術方案之發明係如第20或21技術方案之被加工物 之加工方法，其中自上述第丨光源出射之上述第丨雷射光係 脈寬為psec級之超短脈衝光；藉由設置於自上述第】光源 直至上述載物台之上述第！雷射光之光路上之第丨物鏡系 統，而可調整上述第1雷射光之焦點位置；將上述第〗雷射 光之焦點位置設定於上述被加工物之表面之上方，並使上 述第2雷射光之焦點位置與上述基底基板之露出部分一 致。 第23技術方案之發明係如第19至21技術方案中任一技術 方案之被加工物之加工方法，其中上述第丨方向與上述第2 方向係彼此相反之朝向。 第24技術方案之發明係一種被加工物之加工方法其特 徵在於其係用以於基底基板上形成有異質材料層之附有異 質材料之基板之被加工物上形成分割起點者；且其包含： 載置步驟，其係將被加工物載置於可向第丨方向與第2方向 移動之載物台上；預加工步驟，其係—邊使上述載物台向 上述第1方向移動，一邊照射自特定光源出射之預加工用 雷射光’#此使基底基板於被照射區域露出；及正式加工 二驟八係以自特疋光源出射之脈寬為級之超短脈衝 光即正式加工用雷射光之各單位脈衝光之被照射區域於上 述基底基板之露出部分離散形成之方式’―邊使上述載物 台向上述第2方向移動，一邊將上述正式加工用雷射光照 射至上述被加工物’藉此使上述被照射區域彼此之間產生 上述基底基板之劈開或裂開。 157901.doc 201219142 第25技術方案之發明係如第24技術方案之被加工物之加 方法，其中上述預加工用雷射光與上述正式加工用雷射 光可藉由改變照射條件而自單一光源選擇性地出射。 第26技術方案之發明係如第25技術方案之被加工物之加 工方法，其中藉由設置於自上述單一光源直至上述載物台 之上述雷射光之光路上之物鏡系統，而可調整上述雷射光 之焦點位置；於上述預加工步驟期間將上述預加工用雷射 光之焦點位置設定於上述被加工物之表面之上方，於上述 正式加工步驟期間，使上述正式加工用雷射光之焦點位置 與上述基底基板之露出部分一致。 第27技術方案之發明係如第24技術方案之被加工物之加 工方法，其中於上述預加工步驟中，自第〗光源出射上述 預加工用雷射光而進行上述預加工，於上述正式加工步驟 中’自與上述第1光源不同之第2光源出射上述正式加工用 雷射光而進行上述正式加工。 第28技術方案之發明係如第27技術方案之被加工物之加 工方法，其中藉由特定之光路切換機構，可對自上述第1 光源直至上述載物台之第1光路上之上述預加工用雷射光 之照射、及自上述第2光源直至上述載物台之第2光路上之 上述正式加工用雷射光之照射進行切換；且自上述光路切 換機構直至上述載物台為止之上述第1光路與第2光路為共 通。 第29技術方案之發明係如第17至21、24至28技術方案中 任一技術方案之加工方法，其中利用不同之上述單位脈衝 157901.doc •15- 201219142 光形成之至少兩個被照射區域係以於上述被加工物之容易 劈開或裂開方向上相鄰之方式形成。 第30技術方案之發明係如第29技術方案之加工方法，其 中所有之上述被照射區域係沿著上述被加工物之容易劈開 或裂開方向形成。 第31技術方案之發明係如第17至21、24至28技術方案中 任一技術方案之加工方法，其中上述被照射區域係於相對 於上述被加工物之不同的兩個容易劈開或裂開方向為等價 之方向上形成。 第32技術方案之發明係如第24至28技術方案中任一技術 方案之加工方法，其中於上述被加工物上形成上述用於分 割之起點時，利用不同之上述單位脈衝光之至少兩個被照 射區域之形成係以相對於上述被加工物之不同的兩個上述 令易劈開或裂開方向而交替、且上述至少兩個被照射區域 於上述容易劈開或裂開方向上相鄰的方式進行。 第33技術方案之發明係一種被加工物之分割方法其特 徵在於：將藉由根據第17至21、24至28技術方案中任一技 術方案之方法，而形成有分割起點之被加工物沿著上述分 割起點進行分割。 [發明之效果] 根據第1至33技術方案之發明，對於在基底基板上形成 有金屬層或半導體層等異質材料層之被加工物，亦可恰當 地形成分割起點，進而可恰當地分割該被加工物。又可 將被加工物變質引起之加工痕之形成或被加工物之飛散等 157901.doc •16· 201219142 控制於局部範圍内。 【實施方式】 <加工對象> 於本實施形態中，說明對附有異質材料之基板形成分割 起點之情形。此處’所謂附有異質材料之基板，係指於基 底基板（具體而言係藍寶石等硬脆性基板）上形成有金屬^ 膜層或半導體層等異質材料層之基板。基底基板之厚度及 異諸，層之厚度並無特別限制，但通常自易操作性觀點 而吕’前者具有數百叫〜數匪左右之厚度而後者形成為 亂級至崎左右之厚度。即，基底基板之厚度相對大於 異質材料層之基板係附有異歸料之基板之—般形態。 <劈開/裂開加工之原理> 百先，說明本發明之實施形態中進行之 P气/¾) Μ上 ·〜U〜训丄市悲即劈 :"1加工之原理。所謂劈開/裂開加工，簡而言之係一 邊掃描脈衝雷射光（町亦僅稱為㈣幻， 昭 至被加工物之t矣而以士 4 ，、…射 區域之面)，藉此使各脈衝之被照射 —β序產生被加1物之劈開或裂開，作為各個上形 成之劈開面或裂開面y 割起點)。開面之連續面而形成用於分割之起點(分 再者，於本實施形態中， 開面以外之处曰面士㈣ 月裂開係4曰被加工物沿著劈 卜之、，。日日面大體規則地斷裂之現 曰 為裂開面。再者，除了完全沿著結晶面之微觀現象二曰^ 及裂開以外，有時亦會沿著大 省 觀斷裂即龜裂。因物質不同，有睥：：：“位而產生宏 有時主要僅產生劈開、裂開 157901.doc -17- 201219142 或龜裂中任一者’但以下為了避免說明繁雜 開、裂開、及龜裂而統稱為劈開/裂開等:、°°別劈 所述之形態之加工僅稱為劈㈣開加卫。進而，將如上 轴以：’以被加工物為六方晶體之單晶物質其以軸”2 a3軸之各軸彳向為容易劈開/裂❹向之情 面藍寶石基板等符合此情形。六；晶 本毛明之加工中，根據該等軸之方 ^與加n線之方向（加卫預定方向）之關係，而存在若 2案。以下，對料進行㈣4者，以下將對應各脈 衝而照射之雷射光稱為單位脈衝光。 <第1加工圖案> 第1加工圖案係al轴方向、a2轴方向、a3轴方向之任一 者與加工預定線平行時之劈開/裂開加工之態樣。更簡單 而σ，係容易劈開/裂開方向與加工預定線之方向—致時 之加工態樣。 圖1係表不第1加工圖案之加工態樣之模式圖。圖i中例 不有al軸方向與加工就線L平行之情形。圖叫表示此情 ;時之al軸方向、a2軸方向、a3軸方向與加工預定線匕之 方位關係。圖1(b)表示雷射光之第丨脈衝之單位脈衝光照射 、力工預疋線L端部之被照射區域re 1之狀態。 通常而言’單位脈衝光之照射會對被加工物之極微小區 域賦予高能量，故該照射會於被照射面上與單位脈衝光之 (雷射光之）被照射區域相當或較被照射區域更廣之範圍内 157901. •18· 201219142 產生物質之變質•熔融•蒸發除去等。 然而，若單位脈衝光之照射時間即脈寬設定地極短，則 較，射光之點尺寸更小且存在於被照射區域re】之大致中 央區域之物質，會因自照射之雷射光中獲得運動能量而向 與被照射面垂直之方向飛散或者變質，另一方面，以伴隨 該飛政產生之反力為首之因照射單位脈衝光而產生之衝擊 或應力，會作用於該被照射區域之周圍、尤其係容易劈開/ 裂開方向即al軸方向、a2軸方向、a3轴方向。藉此，產生 沿著相應方向，外觀上雖保持接觸狀態但部分產生微小之 劈開或m或者未達到劈開或裂開程度且内部存在熱崎 變之狀態。換言之，亦可說超短脈衝之單位脈衝光之照射 係作為用以形成朝向容易劈開/裂開方向之俯視大致直線 狀之弱強度部分之驅動力發揮作用。 於圖1(b)中，以虛線箭頭模式性表示上述各容易劈開/裂 開方向上形成之弱強度部分中之、與加工預定線1之延伸 方向吻合之+al方向之弱強度部分W1。 其次，如圖1(c)所示，若照射雷射光之第2脈衝之單位脈 衝光，於加工預定線L上與被照射區域RE1相距特定距離 之位置處形成被照射區域RE2，則與第i脈衝同樣地，此第 2脈衝亦形成沿著容易劈開/裂開方向之弱強度部分。例 如，於-al方向上形成弱強度部分W2a，於+al方向上形成 弱強度部分W2b。 然而，於該時刻，因第丨脈衝之單位脈衝光之照射而形 成之弱強度部分W1係存在於弱強度部分W2a之延伸方向 157901.doc -19- 201219142 二?旦弱強度部分W2a之延伸方向變成利用較其他部位 此！而能產生劈開或裂開之部位。因此，實際上，若 =!2:衝之單位脈衝光’則此時產生之衝擊或應力傳 =劈開/裂開方向及之前存在之弱強度部分，自弱 至弱強度部分W1，於大致照射瞬間產生完全 =開或裂開。藉此，形成圖1⑷所示之劈開/裂開面C卜 ，劈開/裂開面C1於被加工物之圖式俯視垂直方向上 可形成為數㈣〜數十_左右之深度。而且，如下所述，於 劈開/裂開面C1上受到強衝擊或應力而產生結晶面之滑 動，從而於深度方向上產生起伏。 +而且’如圖1⑷所示，之後藉由沿著加工預定線L掃描 每射光，依序對被照射區域re1、RE2、re3 單位脈衝光，相對應地，依序形成劈開/裂開面：射 C3·.，該態樣中係連續形成劈開/㈣面，稱為以加工圖 案之劈開/裂開加工。 曰自其他觀點而言，亦可認為係利用單位脈衝光之照射而 θ、、、、此使付被加工物之表層部分膨腸，於被照射區域 RE1、RE2、RE3 ' RE4各自之較大致中央區域更靠外侧 處’劈開/裂開面。、心3...上作用垂直拉伸應力，藉 此使劈開/裂開不斷進展。 即’於第1加工圖案中’沿著加工預定線1而離散存在之 複數個被照射區域、與該等被照射區域之間形成的劈開/ 裂開面就整體而言’成為沿著加工預定線L分割被加工物 時之分割起點。形成該分割起點之後，使用特定夹具或裝 157901.doc 201219142 置進行为割，藉此能夠以大致沿著加工預定線[之態樣分 割被加工物。 再者，為了實現此種劈開/裂開加工，需要照射脈寬 短、且短脈衝之雷射光。具體而言’必須使用脈寬為1〇〇 psec以下之雷射光。例如，較佳使用具有i psec〜5〇 左 右之脈寬之雷射光。 另一方面，單位脈衝光之照射間距（被照射點之中心間 隔）規定於4 μπι〜50 μιη之範圍内便可。若照射間距大於該 範圍’則容易劈開/裂開方向之弱強度部分之形成有時會 跟不上劈開/裂開面之形成，因此就確實地形成由如上所 述之劈開/裂開面構成之分割起點之觀點而言不佳。再 者’就掃描速度、加工效率、產品品質方面而言，照射間 距越大越好’但為了更確實地形成劈開/裂開面，較理想 的是規定於4 μιη〜30 μιη之範圍，更佳為4 gm〜15叫左 右。 以下當雷射光之重複頻率為R(kHZ)時，每 自雷射光源發出單位脈衝光。當雷射光相對於被加工物而 以相對速度V(mm/sec)移動時，照射間距Δ(μπι)係藉由 △=V/R規定》因此’雷射光之掃描速度ν與重複頻率係以八 為數μιη左右之方式規定。例如’較佳為掃描速度乂為5〇 mm/sec〜3000 mm/sec左右’重複頻率 R為 1 kHz〜2〇〇 kHz， 尤其係10 kHz〜200 kHz左右。V或R之具體值只要考慮被加 工物之材質或吸收率、導熱率、熔點等而適當規定便可。 雷射光係連續地以約1 μιη〜10 μιη左右之光束直徑照射。 157901.doc -21· 201219142 此時，雷射光之照射之峰值功率密度約& 〇 i TW/cm2〜數 10 TW/cm2。 又，雷射光之照射能量（脈衝能量）於0.1 μΐ〜50 μΐ之範圍 内適當規定便可。 圖2係利用第1加工圖案之劈開/裂開加工而形成分割起 點之被加工物之表面之光學顯微鏡圖像。具體而言，表示 將藍寶石C面基板设為被加工物’於其c面上將“轴方向設 為加工預疋線L之延伸方向而以7 μιη間隔離散形成被照射 點之加工之結果。圖2所示之結果示意實際之被加工物藉 由上述機制而被加工。 而且，圖3係將利用第丨加工圖案之加工而形成分割起點 之藍寶石C面基板，沿著該分割起點分割之後之表面…面） 至剖面之SEM(掃描電子顯微鏡）圖像。再者，圖3中以虛線 表示表面與刮面之邊界部分。 圖3中觀察到之與相應表面相距丨〇 μιη前後之範圍内大致 等間隔存在的、具有自被加工物表面至内部之長度方向之 細長二角形狀或針狀區域，係藉由單位脈衝光之照射而直 接變質或產生飛散除去等現象之區域（以下稱為直接變質 區域）。而且’該等直接變質區域之間存在之、觀察到圖 紙俯視左右方向上具有長度方向之筋狀部分以次微米間距 於圖紙俯視上下方向連續多個的區域係劈開/裂開面。該 等直接變質區域及劈開/裂開面之更下方，係因分割而形 成之分割面。 形成有劈開/裂開面之區域並非受到雷射光照射之區 157901.doc •22· 201219142 域，故上述第丨加工圖案之加工中，進行離散形成之直接 變質區域變成加工痕。而且，直接變質區域之被加工面之 尺寸僅為數百nm〜i μιη左右。即，藉由進行第…工圖案 之加工，可形成與先前相比能適當抑制加工痕之形成之分 割起點。 再者，SEM圖像中觀察到之筋狀部分實際上係劈開/裂 開面上形成之具有°·1，〜1，左右高低差之微小凹凸。 該凹凸係於以如藍寶石之硬脆性無機化合物作為對象而進 行劈開/裂開加工時，因單位脈衝光之照射而對被加工物 作用強衝擊或應力，且因特定之結晶面產生滑動而形成。 此種微細凹凸㈣存在，但根據圖3判斷表面與剖面以 波線部分為邊界大致正交，故只要微細凹凸位於加工誤差 之容許範圍’則可說能夠藉由第1加工圖案形成分割起 點’沿著該分割起點分割被加工物’藉此將被加工物相對 於其表面大致垂直地進行分創。 再者’如下所述，亦存在積極形成該微細凹凸為佳之情 ::。例如，藉由第!加工圖案之加工，亦可於某種程度上 獲得藉由下述第2加工圖荦之加工 ㈣之加^顯著獲得之光掠出效 率耠尚之效果。 〈第2加工圖案> 第2加工圖案係al轴方向、a2軸方向、&3轴方向中之任 固與加工預定線垂直時之劈 去，筮^ ^ 裂開加工之態樣。再 第力口工圖案使用之雷射光之條件與第ι加工圖 同。更簡單而言’係相對於相異之2個容易劈開/裂開；， 15790I.doc •23· 201219142 為等價之方向（成為2個容易劈開/裂開方向之對稱轴之方 向）變成加工預定線之方向時之加工態樣。 圖4係表示第2加工圖案之加工態樣之模式圖。圖々令例 示有al軸方向與加工預定線L正交之情形。圖4(幻表示此時 之al軸方向、a2轴方向、a3軸方向與加工預定線l之方位 關係。圖4(b)表示雷射光之第1脈衝之單位脈衝光照射於加 工預定線L之端部之被照射區域reii之狀態。 第2加工圖案亦係藉由照射超短脈衝之單位脈衝光，與 第1加工圖案同樣地形成弱強度部分。圖4(b)中，以虛線箭 頭模式性表示了上述各容易劈開/裂開方向上形成之弱強 度部分中之 '接近加工預定線L之延伸方向之_a2方向及 +a3方向上之弱強度部分wi ia、wi2a。 而且，如圖4(c)所示’若照射雷射光之第2脈衝之單位脈 衝光，於加工預定線L上於與被照射區域reii相距特定距 離之位置處形成被照射區域RE12，則與第1脈衝同樣地， 此第2脈衝亦形成沿著容易劈開/裂開方向之弱強度部分。 例如’於-a3方向上形成弱強度部分wilb，於+a2方向上形 成弱強度部分W12b，於+a3方向上形成弱強度部分Wllc， 於-a2方向上形成弱強度部分wi2c。 此情形與第1加工圖案同樣地，因第1脈衝之單位脈衝光 之照射而形成之弱強度部分W1 la、W12a分別存在於弱強 度部分Wllb、W12b之延伸方向上，實際上若照射第2脈衝 之單位脈衝光，則此時產生之衝擊或應力會於容易劈開/ 裂開方向及之前存在的弱強度部分傳播。即，如圖4(d)所 157901.doc -24 - 201219142 示，形成劈開/裂開面C11 a、C11 b。再者，此情形時，劈 開/裂開面Clla、Cllb於被加工物之圖紙俯視垂直方向上 可形成為數μιη〜數十μιη左右之深度。 其次’如圖4(e)所示，沿著加工預定線l掃描雷射光， 對被照射區域RE11、RE12、RE13、RE14..·依序照射單位 脈衝光，則因此時產生之衝擊或應力，沿著加工預定線L 而依序形成圖紙俯視直線狀之劈開/裂開面Clla及Cllb、 C12a及 C12b、C13a及 C13b、C14a及 C14b...。 如此，實現劈開/裂開面相對於加工預定線L而對稱之狀 態。第2加工圖案中，沿著加工預定線l離散存在之複數個 被照射區域、與該等鋸齒狀存在之劈開/裂開面就整體而 言，成為沿著加工預定線！^分割被加工物時之分割起點。 圖5係利用第2加工圖案之劈開/裂開加工而形成分割起 點之被加工物之表面之光學顯微鏡圖像。具體而言，表示 將藍寳石C面基板設為被加工物，且於其(：面上將與“軸方 向正交之方向设為加工預定線L之延伸方向而以7 間隔 離散形成被照射點之加工。根據圖5，實際之被加工物亦 與圖4(e)之模式圖同樣地，確認表面視鋸齒狀之字狀之） 劈開/裂開面。此結果暗示實際之被加工物係藉由上述機 制而加工。 _圖6係將藉由第2加工圖案之加工而形成分割起點之 藍寶石C面基板沿著該分割起點分割之後之表面至 剖面之_圖像。再者，圖6中以虛線表示表面與剖面之 邊界部分。 157901.doc -25· 201219142 根據圖6 ’確認於分割後之被加i物之剖面之與表面相 距1〇 μηι刖後之範圍内，被加工物之剖面具有與圖4(匀模式 '表不之鋸齒狀配置相對應之凹凸。形成此凹凸者係劈開/ 裂開面。再者，圖6中之凹凸之間距係5 μπι左右。與第1加 圖案之加工之情形同樣地，劈開/裂開面並不平坦，而 疋因單位脈衝光之照射導致特定之結晶面產生滑動，且伴 隨此而產生次微米間距之凹凸。 而且，對應於此凹凸之凸部之位置而自表面部分向深度 方向延伸者係直接變質區域之剖面。肖圖3所示之^加工 圖案之加工所形成之直接變質區域相&，其形狀不均勻。 而且，該等直接變質區域及劈開/裂開面之更下方係因分 割而形成之分割面。 第2加工圖案之情形與第丨加工圖案相同，僅離散形成之 直接變質區域變成加工痕。而且，直接變質區域之被加工 面之尺寸僅為數百nm〜2 μηιΑ右。#，進行第2加工圖案 之加工時，亦可實現加工痕之形成較先前更佳之分割起點 之形成。 於第2加工圖案之加工之情形時，除了劈開/裂開面上形 成之次微米間距之凹凸，還以相鄰之劈開/裂開面彼此為 數μιη左右之間距形成凹凸。形成具有此種凹凸形狀之剖 面之態樣，於由藍寶石等具有硬脆性且光學透明之材料構 成之基板上，將形成LED構造等發光元件構造之被加工物 以晶片（分割素片）單位分割之情形時有效。於發光元件之 情形時，利用雷射加工而於基板上形成之加工痕之部位， 157901.doc .26· 201219142 會吸收發光元件内部產生之光，使得元件之光掠出效率降 低丄但藉由進行第2加工圖案之加工而於基板加工剖面上 有意形成如圖6所示之凹凸之情形時，相應位置之全反射 率下降，發光元件實現更高之光掠出效率。 <第3加工圖案> 第3加工圖案與第2加工圖案之相同之處在於使用超短脈 衝之雷射光、及31軸方向、a2|4方向、咖方向之任一個 與加工預定線垂直(相對於相異之2個容易劈開/裂開方向為 等價之方向成為加工預定線之方向），而與第2加工圖案之 不同之處在於雷射光之照射態樣。 一圖7係表示第3加卫圖案之加工態樣之模式圖。圖7中例 不有al轴方向與加卫預定線L正交之情形。圖了⑷表示此時 之al軸方向、a2轴方向、心軸方向與加工預定線l之方位 關係。 於上述第2加工圖案中，係根據與圖7(a)所示相同之方位 關係’將雷射光沿著加工預定線L之延伸方向、即&2軸方 向^3軸方向之正中之方向（相對於咖方向與咖方向為 等價之方向）而直線地掃描。於第3加工圖案中，代替於 此，如圖7(b)所示，係以各被照射區域以交替沿著與夾持 力預疋線L之2個容易劈開/裂開方向之態樣鋸齒狀（z字） 瓜成之方式，照射形成各被照射區域之單位脈衝光。若為 圖7之情形’則交替沿著·a2方向與㈤方向而形成被照射 區域RE21、RE22、RE23、RE24、RE25··.。 以此態樣照射單位脈衝光時，亦與第丨及第2加工圖案同 157901.doc -27- 201219142 樣地，伴隨各單位脈衝光之照射而於被照射區域之間形成 劈開/裂開面。若為圖7(b)所示之情形，藉由 射區域则、細、刪、編、聽...，而依^成、 劈開 /裂開面 C21、C22、C23、C24...。 如此，第3加工圖帛巾，以加工預定線L為轴而鑛齒狀配 置之離散存在之複數個被照㈣域、與各被照射區域之間 形成之劈開/裂開面就整體而言，成為沿著加工預定壯分 割被加工物時之分割起點。 而且，沿著相應分割起點實際進行分割時，與第2加工 圖案同樣地，於分割後之被加工物之剖面之與表面相距1〇 μπι前後之範圍内’形成劈開/裂開面導致之數^^^間距之凹 凸。而且，各劈開/裂開面上，與第1及第2加工圖案之情 形同樣地，因單位脈衝光之照射而於特定之結晶面產生， 且伴隨此而產生次微米間距之凹凸。X ’直接變質區域之 形成態樣亦與第2加工圖案相同。即，第3加工圖案中，亦 可將加工痕之形成抑制為與第2加工圖案相同程度。 此於此種第3加工圖案之加工之情形時，與第2圖案 之加工同樣地，除了劈開/裂開面上形成之次微米間距之 凹凸以外’還藉由劈開/裂開面彼此而形成數㈣左右之間 距之凹凸’故以發光元件為對象時就所得發光元件提高如 上所述之光掠出效率之觀點而言，第3加工圖案之加工更 適宜。 再者’根據被加工物之種類不同，$ 了更確實地產生劈 裂開’亦可於任一加工預定線L上之位置即圖7(b)之被 157901.doc -28- 201219142 照射區域RE2 1與被昭射區祕 傲…耵L域RE22之中點、被照射區域 刪與被照射區域_之中點、被照射區域RE23與被照 射區域RE24之中點、被照射區域啦4與被照射領城处25 之中點…上形成被照射區域β 」’、、而’第3加工圖案之被照射區域之配置位置係部分沿 著容易劈開/裂開方向。與如上述般於加工預定線l上之中 點位置亦形成被照射區域之情形相同。即，第3加工圖案 與第1加工圖案之共通之處為，i少2個被照射區域於被加 工物之容易劈開/裂開方向上相鄰形成。因此，換古之， 第3加工圖案亦可認為係週期性改變掃描雷射光之方向而 進行第.1加工圖案之加工。 一又’於第！及第2加工圖案之情形時，被照射區域係位於 =上，：使雷射光出射源沿著加工預定線而於一直線 =二每當到達特定之形成對象位置時照射 先而形成被照射區域便可，此形成態樣最 於第3加工圖幸之倍來歧 4 β …、1^ 累“時’被照射區域並非位於一直線上 2形成為錯齒狀（Ζ字），故不僅可利用使雷射光出射源 /上錯齒狀（Ζ字）移動之手法’還可利用各種手法來形 2被照射區域。再者，於本實施形態中，所謂出射源 =指被加工物與出射源之相對移動，不僅包含被加工物 移：二出射源移動之情形，還包含出射源固定而被加工物 (貫際上係載置被加工物之載物台移動)之態樣。 :’使出射源與載物台與加工預定線平行 移動，且使雷射光之出射方向於與加工預定線垂直之= 157901-(j〇c •29· 201219142 週期性變化等，藉此亦可以滿足如上胼 心如上所述之鋸齒狀配置關 係之態樣形成被照射區域。 或者，使複數個出射源平行地等逮相對移動，且使各出 射源之單位脈衝光之照射時序週期性變化，藉此亦可以滿 足如上所述之鑛#狀配置關係之態樣形成被照射區域。 圖8係表示上述2個情形時之加工預定線與被照射區域之 形成預定位置之關係之圖。任一情形時，如圖8所示，將 被照射區域RE21、RE22、RE23、RE24、RE25之形成預 定位置P21、P22、P23、P24、P25...於恰好與加工預定線l 平行之直線La、邱上交替設定，沿著直線La之形成預定 位置P21、P23、P25…之被照射區域之形成、與沿著直線 之形成預定位置P22、P24...之被照射區域之形成，亦可 看成係同時並列進行。 再者，使出射源鋸齒狀（Z字）移動之情形時，不論係使 雷射光出射源直接移動，還是使載置被加工物之載物台移 動而使雷射光相對掃描，出射源或者載物台之移動均為二 軸同時動作。相對於此，僅使出射源或者載物台與加工預 定線平行地移動之動作係一軸動作。因此，就實現出射源 之高速移動即加工效率提高方面而言，後者更適宜。 如以上之各加工圖案所示，本實施形態中進行之劈開/ 裂開加工係將單位脈衝光之離散照射作為主要用以對被加 工物賦予產生連續劈開/裂開之衝擊或應力之機構而使用 之加工態樣。被照射區域之被加工物之變質（即加工痕之 形成）或飛散等僅係隨附物而局部產生。具有此種特徵之 157901.doc -30· 201219142 本實施形態之劈開/裂開加工，與藉由使單位脈衝光之照 射區域重疊並連續或者間斷地產生變質•炫融•蒸發除去 而進行加工之先前加工手法相比，其機制存在本質上之不 同。 而且，對各被照射區域瞬間施加強衝擊或應力便可，故 可高速掃描雷射光而照射。具體而言，可實現最大脑 mm/Sec之極高速掃描即高速加工。先前之加工方法之加工 速度最多為200 mm/sec左右，其差異顯著。當然，本實施 Γ中實現之加工方法與先前之加工方法相比顯著提高生 產性。 再本實施形態之劈開/裂開加工於如上述各加工圖 案叙被加4之結晶方位（容易劈開/裂開方向之方位）與加 2預定線滿足特定關係時特別有效，但適用對象並不限於 ，原理上亦可適料兩者滿足任意關係之情形或被加工 物為多晶體之情形。該等情形時，相對於加工預定線而產 =開’裂開之方向並非必須固定，故分割起點可產生不 ==由適當地設定被照射區域之間 為首之雷射光之照射條件，而進行該凹凸控 ^ 之容許範圍内之實用上無問題之加工。 誤差 <附有異質材料之基板之加工> 其次’說明將上述劈開/裂開加工應用 料之基板形成分割起點之 、有質材 異質材科之基板而自金屬薄膜“而…相對於附有 曰生屬潯膜層或半導體層— 起點之情形為對象進行說明。 成刀d 157901.doc 5 -31- 201219142 此時，即便嘗試自異質材料層之表面侧以上述第1至第3 加工圖案進行劈開/裂開加工，由於異質材料層自身之材 質問題、及因橫切不同材質之界面之形態導致劈開/裂開 面難以形成之理由’難以恰當地形成直至佔據附有显質材 料之基板之大部分厚度之基底基板為止之劈開/裂開面。 因此，於本實施形態中，預先除去分割預定位置上存在 之異質材料，然後僅對其# | β L、A. 交值野基底基板進订上述劈開/裂開加 工，藉此對附有異質材料之基板形成分割起點。即，本實 施形態中進行之對於附有異質材料之基板之分割起點之形 成’簡而言之包含：預加工，其係將基底基板上存在之異 質材料層除去，使基底基板露出；及正式加工，其係利用 上述劈開/裂開加工而對藉由預加工所露出之基底基板形 成分割起點。 首先，對預加工與正式加卫之基本加工形態進行說明。 圖9係模式性表示被加工物iG係於基底基板⑻上形成金屬 薄膜層1〇2之附有異質材料之基板時之加工狀況之侧剖面 圖。圖10係模式性表示當被加工物10係於基底基板101上 形成半導體層103之附有異質材料之基板時之加工狀況之 側剖面圖。圖9、圖1〇均係於被加工物10之表面（具體而古 係金屬薄膜層102之表面1〇2a或半導體層1〇3之表面心） i'㈣直於圖式之方向上設定加工預定線L。 任-情形時，均先自特定出射源Ea將預加工用雷射光 …、射至被加工物1() ’並利用該預加工用雷射光❿對 口工預定線L上進行掃描（圖9(a)、圖1〇⑷）。藉此沿著加 157901.doc -32- 201219142 工預定線L上而逐漸除去金屬薄膜層ι〇2或半導體層1〇3之 該加工預定線L之附近部分，逐漸形成以基底基板1〇1之上 表面101s為底部之第i槽部1〇2g或i〇3g(圖9(b)、圖1〇(b))。 即’露出基底基板1〇1之上表面101s〇此係預加工。 進行上述預加工時’預加工用雷射光LBa係以各單位脈 衝光之光束點彼此產生重疊（覆蓋）之條件下照射至被加工 面。若將雷射光之光束點徑設為#(μιη)、將掃描速度設為 V(mm/sec)、重複頻率設為R(kHz)，則雷射光照射至同一 位置之次數N係藉由n=卢xR/V而概略算出。預加工用雷射 光LBa之照射係於利用該式所得之次數1^值最低為2之照射 條件下進行。更佳於Ν>1〇之照射條件下進行。尤其係將重 複頻率R設定地較高為宜。 另一方面，預加工用雷射光LBa只要以能夠部分除去金 屬薄膜層102或半導體層1〇3這一程度之能量照射便可。不 宜進行必要以上之能量之照射，會對基底基板1〇1之上表 面l〇ls造成損傷’導致預加工後之正式加工之劈開/裂開加 工無法良好進行。 又’第1槽部1 〇2g或103g之寬度只要係能夠讓進行預加 工後之正式加工時照射之正式加工用雷射光LBb之光束無 阻擋地通過第1槽部l〇2g或1〇3g之程度便足夠。具體值雖 然亦依賴於對基底基板101照射之雷射光之聚光Να值、第 1槽部102g或103 g之厚度（即金屬薄膜層1〇2或半導體層1〇3 之厚度）、及使用上述第1至第3加工圖案中之哪一個，但 如果係於包含藍寶石之基底基板101上設置包含m族氮化S 157901.doc 201219142 The position of the pre-twist line is exposed; the second formal processing step is to irradiate the pulse width from the second light source by discretely forming the irradiated area of each unit pulsed light by the exposed portion of the base substrate In the second laser light of the ultra-short pulse light of the level, the base substrate is cleaved or split between the irradiated regions; and the first stage is moved while moving the stage in the second direction. The pre-processing step and the above-described first processing step. The invention according to the seventeenth aspect, wherein the first laser light having a pulse width from the first light source is a psec level. Ultrashort pulse light; the focus position of the first laser light can be adjusted by the second objective lens system disposed on the optical path of the first laser light from the second light source to the stage; A focus position of the laser light is set above the surface of the workpiece, and a focus position of the second projection light is aligned with an exposed portion of the base substrate. The invention of claim 18 is the method for processing a workpiece according to the eighteenth aspect, wherein the second objective lens system is disposed on the optical path of the second laser light from the second light source to the stage The focus position of the second laser beam; the processing method further includes a second pre-processing step of: irradiating the second laser beam along a second planned line of the workpiece to form the substrate The substrate is exposed at a position of the second planned processing line; and the second main processing step is performed by irradiating the exposed portion of each of the unit pulsed light to the exposed portion of the base substrate by the exposed portion of the base substrate And causing the base substrate to be cleaved or split between the irradiated regions; and performing the second pre-processing step and the first step while moving the stage 157901.doc • 12·201219142 in the first direction After the first processing step is performed to form the starting point for dividing along the first processing line, the focus position of the second laser light is set to the workpiece The second pre-processing step and the above-described first step are performed while the focus stage of the first laser light is aligned with the exposed portion of the base substrate, and the stage is moved in the second direction. The invention is the method of processing the workpiece according to the seventeenth aspect, further comprising: a second pre-processing step of processing the first laser light along the above Irradiation of the second processing target line causes the base substrate to be exposed at a position of the second planned line; and a second main processing step of discretely forming each unit pulse light by the exposed portion of the base substrate Irradiating the second laser light in the irradiated region, causing the base substrate to be cleaved or split between the irradiated regions; and performing the first pre-period while moving the substrate in the second direction After the processing step and the second normal processing step, the starting point for dividing along the first processing planned line is formed, and the stage is turned to the first stage The second pre-processing step and the second main processing step described above are performed while moving in the two directions. The invention of claim 21 is the method for processing a workpiece according to the second aspect, wherein the optical path from the second light source to the stage is branched into two on the way, and the In the processing step and the second pre-processing step, the second laser light is irradiated onto the workpiece by a different optical path. The invention is directed to the processing method of the workpiece according to the 20th or 21st aspect, wherein the pulse width of the ninth laser light emitted from the second light source is a psec level Short pulse light; provided by the above-mentioned first light source to the above-mentioned stage of the above-mentioned stage! a focus lens system on the optical path of the laser beam, wherein the focus position of the first laser light is adjusted; and a focus position of the first laser light is set above the surface of the workpiece, and the second laser light is made The focus position coincides with the exposed portion of the base substrate. A method of processing a workpiece according to any one of the aspects of the present invention, wherein the second direction and the second direction are opposite to each other. The invention of claim 24 is a method for processing a workpiece, characterized in that it is used to form a starting point of a segment on a workpiece on which a substrate of a heterogeneous material is formed on a base substrate with a substrate of a heterogeneous material; and : a placing step of placing the workpiece on a stage movable in the second direction and the second direction; and a pre-processing step of moving the stage in the first direction The pre-processing laser light emitted from a specific light source is exposed to the exposed area of the irradiated area; and the ultra-short pulse light of the pulse width of the elemental light source is officially processed. The laser beam irradiated to each unit of the laser light is formed in a manner that the exposed portion of the base substrate is discretely formed, and the laser light for the main processing is irradiated to the above-mentioned object while moving the substrate in the second direction. The workpiece ' thereby causes the above-mentioned irradiated regions to be cleaved or split between the base substrates. The invention of claim 24, wherein the pre-processing laser light and the above-described laser beam for formal processing can be selectively selected from a single light source by changing an irradiation condition. Out of the ground. The invention of claim 26 is the method for processing a workpiece according to the twenty-fifth aspect, wherein the thunder is adjustable by an objective lens system disposed on the optical path of the laser light from the single light source to the stage a focus position of the light; the focus position of the pre-processing laser light is set above the surface of the workpiece during the pre-processing step, and the focus position of the laser beam for the formal processing is set during the formal processing step The exposed portions of the base substrate are identical. According to a twenty-second aspect of the present invention, in the processing method of the workpiece according to the twenty-fourth aspect, in the pre-processing step, the pre-processing laser light is emitted from the light source to perform the pre-processing, in the formal processing step The above-described main processing is performed by emitting the above-described laser light for the main processing from the second light source different from the first light source. The invention of claim 27 is the method for processing a workpiece according to the twenty-seventh aspect, wherein the pre-processing of the first light source from the first light source to the first optical path of the stage is performed by a specific optical path switching mechanism Irradiation with laser light and illumination from the second light source up to the laser beam for the normal processing on the second optical path of the stage; and the first from the optical path switching mechanism to the stage The optical path is common to the second optical path. The invention of claim 29, wherein the processing method of any one of the seventeenth to twenty-fourth, twenty-fourth to twenty-eighthth aspect, wherein at least two of the irradiated regions formed by using the unit pulse 157901.doc •15-201219142 light is different It is formed in such a manner that the above-mentioned workpieces are adjacent to each other in an easy splitting or splitting direction. The invention of claim 29 is the method of processing according to the twenty-ninth aspect, wherein all of the irradiated regions are formed along an easy splitting or splitting direction of the workpiece. The invention of any one of the first aspect of the present invention, wherein the irradiated area is easily split or split relative to the two different workpieces. The direction is formed in the direction of equivalence. The invention of any one of claims 24 to 28, wherein at least two of the unit pulse lights are different when the starting point for dividing is formed on the workpiece The formation of the irradiated area is alternated by two different ease of splitting or splitting directions with respect to the workpiece, and the at least two irradiated areas are adjacent in the easy splitting or splitting direction. get on. The invention of the 33rd aspect of the invention is a method for dividing a workpiece, characterized in that a workpiece edge having a division starting point is formed by the method according to any one of the technical solutions of the 17th to 21st, 24th to 28th. The segmentation starting point is divided. [Effect of the Invention] According to the invention of the first aspect to the third aspect of the invention, the object to be processed in which the heterogeneous material layer such as the metal layer or the semiconductor layer is formed on the base substrate can be appropriately formed into the division starting point, and the division can be appropriately divided. The processed object. It is also possible to control the formation of the processing marks caused by the deterioration of the workpiece or the scattering of the workpiece, etc. 157901.doc •16· 201219142 is controlled within a local range. [Embodiment] <Processing Object> In the present embodiment, a case where a starting point of division is formed on a substrate with a foreign material is described. Here, the substrate having a heterogeneous material refers to a substrate on which a heterogeneous material layer such as a metal film layer or a semiconductor layer is formed on a base substrate (specifically, a hard and brittle substrate such as sapphire). The thickness of the base substrate and the thickness of the layer are not particularly limited. However, in general, from the viewpoint of ease of handling, the former has a thickness of several hundred to several tens of enthalpy, and the latter is formed to a thickness of about gradual to sagittal. That is, the thickness of the base substrate is relatively larger than that of the substrate to which the heterogeneous material layer is attached. <Principle of splitting/cracking processing> First, the P gas/3⁄4) performed in the embodiment of the present invention is described. ·~U~丄市丄悲是劈:"1 Principle of processing. The so-called split/split processing, in short, scans the pulsed laser light (the town is also called only the (four) illusion, and the workpiece is turned on, and the surface of the area is taken by the squad 4, ...) Each pulse is illuminated—the β-sequence is cleaved or cleaved by the addition of one object as the starting point or the cleavage plane y cutting starting point formed on each of the above. The starting surface for the opening is formed to form the starting point for the division (in the case of the present embodiment, the surface of the surface is removed from the surface of the surface.) The surface of the sun is generally broken and the surface is now cracked. In addition, except for the microscopic phenomenon along the crystal plane, the cracks are sometimes broken along the big province. Different, there are 睥::: "Positions and macros sometimes only produce splits, splits 157901.doc -17- 201219142 or any of the cracks' but below to avoid complicated opening, cracking, and cracking It is collectively referred to as splitting/cracking, etc.: The processing of the form described by °° is only called 劈(四)开卫卫. Further, the above axis is: 'The single crystal substance with the workpiece as a hexagonal crystal The axis of the axis 2 a3 axis is easy to open/crack the sapphire substrate, etc. This is the case. In the processing of the crystal grain, according to the direction of the axis and the direction of the n line ( The relationship between the directions of the stipulations is the same as that of the case. If there is a case of 2, the following is the case of (4) 4, the following will be Each pulse of the laser beam irradiated called a unit pulsed light. <First Processing Pattern> The first processing pattern is a pattern of splitting/cleaving processing when any one of the a-axis direction, the a2-axis direction, and the a3-axis direction is parallel to the planned line. It is simpler and σ, which is easy to open/crack the direction and the direction in which the predetermined line is processed. Fig. 1 is a schematic view showing a processing aspect of the first processing pattern. In the example of Fig. i, there is no case where the direction of the al axis is parallel to the processing of the line L. The figure is called the situation; the a-axis direction, the a2-axis direction, the a3-axis direction, and the orientation relationship of the planned line 匕. Fig. 1(b) shows the state in which the unit pulse light of the third pulse of the laser light is irradiated and the irradiated region re1 at the end of the force pre-twist line L. Generally speaking, 'the irradiation of unit pulse light gives high energy to the extremely small area of the workpiece, so the irradiation will be on the illuminated surface corresponding to the irradiated area of the unit pulsed light (the laser light) or the irradiated area. A wider range of 157901. •18· 201219142 Deterioration of substances produced • Melting • Evaporation removal, etc. However, if the irradiation time of the unit pulse light, that is, the pulse width is set to be extremely short, the material having a smaller spot size and being present in the substantially central region of the irradiated region re is obtained from the self-irradiated laser light. The kinetic energy is scattered or deteriorated in a direction perpendicular to the surface to be illuminated. On the other hand, an impact or stress generated by the unit pulse light caused by the reaction force generated by the flying reaction acts on the irradiated region. In particular, it is easy to open/crack the direction, that is, the a-axis direction, the a2-axis direction, and the a3-axis direction. Thereby, in a state in which the appearance is maintained in contact with the corresponding direction, a slight opening or m is partially generated or the degree of cracking or cracking is not reached and the heat is internally changed. In other words, it can be said that the irradiation of the unit pulse light of the ultrashort pulse functions as a driving force for forming a weakly-strength portion which is substantially linear in a plan view in a direction in which the opening/cleaving direction is easy to open. In Fig. 1(b), the weak-strength portion W1 in the +al direction which coincides with the extending direction of the planned line 1 in the weak-strength portions formed in the respective easy-opening/cracking directions is schematically indicated by a broken line arrow. Next, as shown in FIG. 1(c), when the unit pulse light of the second pulse of the laser light is irradiated, the irradiated area RE2 is formed at a position at a predetermined distance from the irradiated area RE1 on the planned line L, and then Similarly to the i-pulse, this second pulse also forms a weak intensity portion along the direction of easy cleaving/cracking. For example, the weak intensity portion W2a is formed in the -al direction, and the weak intensity portion W2b is formed in the +al direction. However, at this time, the weak-strength portion W1 formed by the irradiation of the unit pulse light of the second pulse exists in the extending direction of the weak-strength portion W2a 157901.doc -19-201219142 The extending direction of the weak-strength portion W2a Become utilized more than other parts of this! It can produce a site that is split or split. Therefore, in fact, if =! 2: the unit pulse light of the rushing, then the impact or stress transmission generated at this time = the opening/cracking direction and the weak intensity portion existing before, the weak to weak intensity portion W1, in the general irradiation Instantly produces complete = open or split. Thereby, the split/cleavage plane C shown in Fig. 1 (4) is formed, and the split/cleavage plane C1 can be formed to have a depth of several (four) to several tens of _ in the vertical direction of the drawing of the workpiece. Further, as described below, a strong impact or stress is applied to the split/cleavage surface C1 to cause sliding of the crystal face, thereby generating undulation in the depth direction. + and ' As shown in Fig. 1 (4), after each of the light beams is scanned along the planned line L, the unit pulse light of the irradiated regions re1, RE2, and re3 is sequentially formed, and correspondingly, the split/clear plane is sequentially formed: Shooting C3·., in this aspect, the split/(four) plane is continuously formed, which is called the splitting/cracking processing of the processing pattern. From other points of view, it can be considered that the irradiation of the unit pulsed light and θ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The central area is further open at the outer side. The vertical tensile stress acts on the heart 3, thereby causing the splitting/cracking to progress. That is, 'in the first processing pattern, the plurality of irradiated regions that are discretely present along the planned line 1 and the split/cleavage surfaces formed between the regions to be irradiated are generally made to be processed along the processing. The starting point of the division when the line L divides the workpiece. After the starting point of the division is formed, the cutting is performed using a specific jig or 157901.doc 201219142, whereby the workpiece can be divided substantially along the line to be processed. Further, in order to realize such splitting/cracking processing, it is necessary to irradiate laser light having a short pulse width and a short pulse. Specifically, it is necessary to use laser light having a pulse width of 1 〇〇 psec or less. For example, it is preferable to use laser light having a pulse width of i psec to 5 〇. On the other hand, the irradiation pitch of the unit pulse light (the center interval of the irradiation spot) is specified to be in the range of 4 μm to 50 μm. If the irradiation pitch is larger than the range ', the formation of the weak strength portion which is easy to open/cleave direction may not follow the formation of the split/cleavage surface, and thus the formation of the split/cleavage plane as described above is surely formed. The point of division of the starting point is not good. Furthermore, in terms of scanning speed, processing efficiency, and product quality, the larger the irradiation pitch, the better. However, in order to form the cleaving/cleaving surface more reliably, it is preferable to set it in the range of 4 μm to 30 μm, and more preferably. Called around 4 gm~15. Hereinafter, when the repetition frequency of the laser light is R (kHZ), a unit pulse light is emitted every time from the laser light source. When the laser light is moved at a relative speed V (mm/sec) with respect to the workpiece, the irradiation pitch Δ(μπι) is defined by Δ=V/R, so the scanning speed ν of the laser light and the repetition frequency are Eight is specified in the form of several μηη. For example, 'the scanning speed 乂 is preferably about 5 〇 mm/sec to 3,000 mm/sec.' The repetition frequency R is 1 kHz to 2 kHz, especially about 10 kHz to 200 kHz. The specific value of V or R may be appropriately determined in consideration of the material to be processed, the absorptivity, the thermal conductivity, the melting point, and the like. The laser light is continuously irradiated with a beam diameter of about 1 μm to 10 μm. 157901.doc -21· 201219142 At this time, the peak power density of the laser irradiation is about & 〇 i TW/cm2 to 10 TW/cm2. Further, the irradiation energy (pulse energy) of the laser light can be appropriately determined within the range of 0.1 μΐ to 50 μΐ. Fig. 2 is an optical microscope image of the surface of the workpiece to be divided by the first processing pattern by the splitting/cracking process. Specifically, the sapphire C-plane substrate is a result of processing in which the object to be processed is formed on the c-plane by the "axis direction" as the extending direction of the processing pre-pitched line L and dispersed at intervals of 7 μm. The result shown in Fig. 2 indicates that the actual workpiece is processed by the above mechanism. Further, Fig. 3 is a sapphire C-plane substrate which is formed by the processing of the second processing pattern to form a division starting point, and is divided along the division starting point. SEM (Scanning Electron Microscope) image of the surface to the cross section. Further, the boundary portion between the surface and the scraping surface is indicated by a broken line in Fig. 3. The range between the surface and the corresponding surface observed in Fig. 3 is 丨〇μηη An elongated dihedral or needle-shaped region having a length from the surface of the workpiece to the inside, which is substantially equally spaced, is a region that is directly deteriorated by the irradiation of a unit pulsed light or that causes scattering to be removed (hereinafter referred to as It is a direct metamorphic region.) And there is a ridge between the directly metamorphic regions and the longitudinal direction of the drawing. The area in which the drawing is continuous in the vertical direction is a split/cleavage surface. The direct metamorphic region and the split/cleavage surface are further divided surfaces formed by the division. The region in which the split/clear surface is formed is formed. It is not in the area of 157901.doc •22·201219142, which is irradiated by laser light. Therefore, in the processing of the above-mentioned second processing pattern, the directly deformed region which is discretely formed becomes a processing mark. Moreover, the size of the processed surface of the direct metamorphic region is only In the processing of the first working pattern, it is possible to form a starting point of the cutting which can appropriately suppress the formation of the processing mark as compared with the prior art. Further, the rib portion observed in the SEM image In fact, it is a minute unevenness which is formed on the split/cleavage surface and has a height difference of about −1, 〜1, and is caused by a hard and brittle inorganic compound such as sapphire, which is opened/cleaved. When the unit pulsed light is irradiated, a strong impact or stress is applied to the workpiece, and the specific crystal surface is slipped. This fine unevenness (4) exists, but the table is judged according to FIG. Since the surface and the cross section are substantially orthogonal to each other with the wave line portion as a boundary, it can be said that the first processing pattern can be divided into the starting point of the first processing pattern, and the workpiece can be divided along the dividing starting point. The workpiece is divided into a direction substantially perpendicular to the surface thereof. Further, as described below, it is preferable to form the fine unevenness actively: for example, by processing the first processing pattern, it is also possible to To the extent that the effect of the light plucking efficiency obtained by the processing of the second processing pattern (4) described below is obtained. <Second processing pattern> The second processing pattern is the a-axis direction, the a2-axis direction, and the & When the three-axis direction is perpendicular to the planned line, the 筮^^ cracking process is performed. The condition of the laser light used in the third force pattern is the same as that of the first processing. More simply, 'the system is easy to open/split relative to the difference; 15790I.doc •23· 201219142 is the equivalent direction (the direction of the symmetry axis that becomes easy to split/crack direction) becomes processing The processing aspect when the direction of the line is predetermined. Fig. 4 is a schematic view showing a processing aspect of the second processing pattern. The illustration shows a case where the direction of the a-axis is orthogonal to the planned line L. 4 (the magical direction of the a-axis direction, the a2-axis direction, the a3-axis direction, and the planned line l of the processing line. FIG. 4(b) shows that the unit pulse light of the first pulse of the laser light is irradiated onto the planned line L. The second processed pattern is formed by irradiating the unit pulse light of the ultrashort pulse with the unit pulse light of the ultrashort pulse, and forms a weak intensity portion in the same manner as the first processed pattern. In FIG. 4(b), a dotted arrow is used. The mode indicates the weak-strength portions wi ia, wi2a in the _a2 direction and the +a3 direction which are close to the extending direction of the planned line L in the weak-strength portions formed in the above-described easy cleavage/cracking directions. 4(c), if the unit pulse light of the second pulse of the laser light is irradiated, the irradiated area RE12 is formed at a predetermined distance from the irradiated area reii on the planned line L, and the first pulse is formed. Similarly, the second pulse also forms a weak intensity portion along the easy split/cleavage direction. For example, a weak intensity portion wilb is formed in the -a3 direction, and a weak intensity portion W12b is formed in the +a2 direction in the +a3 direction. A weak intensity portion Wllc is formed on the -a2 side The weak-strength portion wi2c is formed upward. In this case, the weak-strength portions W1 la and W12a formed by the irradiation of the unit pulse light of the first pulse are respectively present in the extending direction of the weak-strength portions W11b and W12b, similarly to the first processed pattern. In fact, if the unit pulse light of the second pulse is irradiated, the impact or stress generated at this time will propagate in the direction of easy splitting/cracking and the weak intensity existing before. That is, as shown in Fig. 4(d) 157901.doc -24 - 201219142 shows that the split/cleavage surfaces C11 a, C11 b are formed. Further, in this case, the split/cleavage surfaces Clla and Cl1 can be formed in the vertical direction of the drawing of the workpiece to be several μm to several tens Next, the depth is about μηη. Next, as shown in Fig. 4(e), the laser beam is scanned along the line to be processed, and the irradiated areas RE11, RE12, RE13, RE14..· are sequentially irradiated with unit pulse light. The generated impact or stress is sequentially formed along the planned line L to form a straight line of split/cleavage surfaces Clla and Cllb, C12a and C12b, C13a and C13b, C14a and C14b. Split surface relative to processing schedule In the second processing pattern, a plurality of the irradiated regions which are discretely present along the planned line 1 and the split/clear surfaces which are present in the zigzag shape are formed along the planned line as a whole. !^ The starting point of the division when the workpiece is divided. Fig. 5 is an optical microscope image of the surface of the workpiece which is divided into the starting point by the splitting/cracking process of the second processing pattern. Specifically, the sapphire C is shown. The surface substrate is a workpiece, and the processing of the irradiated dots is formed at a distance of 7 from the direction orthogonal to the "axial direction" as the extending direction of the planned line L. According to Fig. 5, the actual workpiece is also in the same manner as the pattern diagram of Fig. 4(e), and the surface is sawn in a zigzag shape. This result implies that the actual workpiece is processed by the above mechanism. Fig. 6 is an image in which the sapphire C-plane substrate which is divided by the processing of the second processing pattern is formed along the surface after the division starting point is divided into a cross section. Further, the boundary portion between the surface and the cross section is indicated by a broken line in Fig. 6. 157901.doc -25· 201219142 According to Fig. 6', it is confirmed that the profile of the workpiece after the division is 1〇μηι刖 from the surface, the profile of the workpiece has the same as that of Fig. 4 (the uniform mode) The jagged shape is arranged to correspond to the unevenness. The unevenness is formed by splitting/cleaving the surface. Further, the distance between the irregularities in Fig. 6 is about 5 μπι. Similarly to the processing of the first additive pattern, the splitting/cracking is performed. The open surface is not flat, and the specific crystal plane is slid due to the irradiation of the unit pulsed light, and the unevenness of the submicron pitch is generated along with this. Moreover, the position from the surface portion to the depth corresponding to the position of the convex portion of the unevenness The direction extension is a section of the direct metamorphic region. The direct metamorphic region phase & formed by the processing of the processing pattern shown in the schematic diagram 3 has an uneven shape. Moreover, the direct metamorphic region and the split/cleavage surface are The lower part is a divided surface formed by the division. The second processing pattern is the same as the second processing pattern, and only the directly deformed direct metamorphic region becomes a processing mark. Moreover, the directly deformed region is processed. The size is only a few hundred nm to 2 μηιΑ right. #, when the second processing pattern is processed, the formation of the processing marks can be formed better than the previous division starting point. In the case of the processing of the second processing pattern, The concavities and convexities of the submicron pitch formed on the cleaving/cleaving surface are formed by forming the concavities and convexities at intervals of several μπη adjacent to each other. The aspect of the cross section having such concavo-convex shapes is formed by sapphire or the like. On a substrate made of a material that is hard and brittle and optically transparent, it is effective to form a workpiece in which a light-emitting element structure such as an LED structure is formed in a unit of a wafer (divided sheet). In the case of a light-emitting element, laser processing is used. The portion of the processing mark formed on the substrate, 157901.doc .26·201219142 absorbs the light generated inside the light-emitting element, so that the light-pigment efficiency of the element is lowered, but the processing of the second processing pattern is performed on the substrate processing profile. When the unevenness as shown in Fig. 6 is intentionally formed, the total reflectance of the corresponding position is lowered, and the light-emitting element achieves higher light-pick-out efficiency. <Third processing pattern> The third processing pattern is the same as the second processing pattern in that the laser light of the ultrashort pulse and the 31-axis direction, the a2|4 direction, and the coffee direction are perpendicular to the planned line. (The direction in which the two different easy-to-open/cleavage directions are equal to the direction of the planned line) is different from the second processed pattern in the irradiation of the laser light. Figure 7 is a schematic view showing the processing aspect of the third reinforcement pattern. In the example of Fig. 7, there is no case where the direction of the a-axis is orthogonal to the line to be secured L. Fig. 4 shows the azimuth relationship between the a-axis direction, the a2-axis direction, and the mandrel direction at this time and the planned line l. In the second processing pattern, the direction of the laser beam in the same direction as shown in FIG. 7(a) is along the direction in which the processing line L is extended, that is, in the direction of the & 2-axis direction ^3 axis direction. (Scanning in a straight line with respect to the direction in which the direction of the coffee is equivalent to the direction of the coffee). In the third processing pattern, instead of this, as shown in FIG. 7(b), each of the irradiated regions is alternately arranged along the two directions of the pre-twisting line L with the clamping force. The zigzag (z) is formed in such a manner that the unit pulse light of each of the irradiated regions is irradiated. In the case of Fig. 7, the irradiated regions RE21, RE22, RE23, RE24, RE25, ... are alternately formed along the (a) direction and the (five) direction. When the unit pulse light is irradiated in this manner, a split/clear surface is formed between the irradiated regions with the irradiation of each unit pulsed light, similarly to the second and second processing patterns, 157901.doc -27-201219142. . In the case shown in Fig. 7(b), the surfaces C21, C22, C23, C24, ... are opened/cleared by the area, fine, deleted, edited, and listened to. In this way, the third processing pattern wiper has a plurality of photographed (four) domains in which the orthodontic arrangement is discrete and the split/cleavage plane formed between each of the irradiated regions with the planned line L as the axis as a whole. It becomes the starting point of the division when the workpiece is strongly divided along the processing schedule. Further, when the division is actually performed along the corresponding division starting point, similarly to the second processing pattern, the number of the split/cleavage planes formed by the formation of the split/cleavage plane in the range of 1 μμm from the surface of the divided workpiece after the division ^^^ The pitch of the pitch. Further, in the respective split/cleavage surfaces, similarly to the first and second processing patterns, the unit crystal light is generated on the specific crystal plane by the irradiation of the unit pulse light, and the unevenness of the submicron pitch is generated. The formation pattern of the X ′ direct metamorphic region is also the same as the second processing pattern. In other words, in the third processing pattern, the formation of the processing marks can be suppressed to the same level as the second processing pattern. In the case of processing such a third processing pattern, in the same manner as the processing of the second pattern, in addition to the unevenness of the sub-micron pitch formed on the split/cleavage surface, the surface is formed by splitting/cleaving surfaces. When the light-emitting element is used as a target for the light-emitting element, the processing of the third processed pattern is more suitable from the viewpoint of improving the light-pigment efficiency as described above. In addition, 'depending on the type of the workpiece, $ is more likely to produce splitting' can also be located on any of the processing lines L, that is, the area illuminated by 157901.doc -28-201219142 in Fig. 7(b) RE2 1 and the target area of the 射 射 耵 耵 耵 域 域 域 域 、 、 、 、 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域The position at which the irradiated region β ′′ is formed on the midpoint of the illuminated city center 25, and the arrangement position of the irradiated region of the third processing pattern is along the easy opening/dissecting direction. The same as the case where the intermediate position on the planned line 1 is also formed as the above-described area as the above. In other words, the third processing pattern and the first processing pattern have a common feature in which two of the irradiated regions are formed adjacent to each other in the easily opened/cleaved direction of the workpiece. Therefore, in the past, the third processing pattern can also be considered to periodically change the direction of scanning the laser light to perform the processing of the first processing pattern. One again, 'on the first! In the case of the second processing pattern, the illuminated area is located at =, so that the laser light source is irradiated along the line to be processed and the line is formed in the straight line = two. Yes, this formation is the most suitable for the third processing map. The 4 × ..., 1 ^ tired "when the irradiated area is not located on the straight line 2, formed into a wrong tooth shape (Ζ word), so not only can be used to make the mine The method of moving the light source/upper-toothed (Ζ) movement can also be used to shape the area to be illuminated by various methods. In addition, in the present embodiment, the source of the source is the relative to the object to be processed. The movement includes not only the movement of the workpiece: the movement of the two exit sources, but also the fact that the source is fixed and the workpiece is moved (the stage on which the workpiece is placed on the workpiece). Parallel movement with the stage and the planned line, and the direction of the laser light emitted perpendicular to the planned line = 157901 - (j〇c • 29 · 201219142 periodic change, etc., thereby also satisfying the above The zigzag configuration The pattern forms a region to be irradiated. Alternatively, a plurality of emission sources are relatively moved in parallel, and the irradiation timing of the unit pulse light of each of the emission sources is periodically changed, thereby satisfying the above-mentioned minerals. Fig. 8 is a view showing the relationship between the planned planned line and the predetermined position of the irradiated area in the case of the above two cases. In either case, as shown in Fig. 8, it will be The formation predetermined positions P21, P22, P23, P24, P25, ... of the irradiation areas RE21, RE22, RE23, RE24, and RE25 are alternately set on the straight line La and the Qi which are exactly parallel to the planned line l, and are formed along the straight line La. The formation of the irradiated regions at the predetermined positions P21, P23, P25, ..., and the formation of the irradiated regions at predetermined positions P22, P24, ... along the straight line may be seen as being simultaneously performed in parallel. When the source zigzag (Z-shaped) moves, whether the laser light source is directly moved or the stage on which the workpiece is placed is moved to cause the laser light to be scanned relative to each other, the movement of the source or the stage is moved. For two In contrast, the operation of moving only the source or the stage parallel to the planned line is performed on one axis. Therefore, the latter is preferable in terms of achieving high-speed movement of the source, that is, processing efficiency. As shown in each of the above processing patterns, the split/split processing performed in the present embodiment uses discrete light per unit pulse light as a mechanism mainly for imparting a shock or stress to the workpiece to cause continuous splitting/cracking. The processing state used. The deterioration of the workpiece in the irradiated area (that is, the formation of the processing mark) or the scattering is locally generated only with the attached object. 157901.doc -30· 201219142 having the above characteristics The splitting/cracking process is substantially different from the previous processing method in which the irradiation of the unit pulsed light is superimposed and the processing is performed continuously or intermittently to produce metamorphism, glare, and evaporation. Further, it is possible to apply a strong impact or stress to each of the irradiated regions instantaneously, so that the laser light can be scanned at a high speed and irradiated. Specifically, it is possible to achieve extremely high-speed scanning of the maximum brain mm/Sec, that is, high-speed machining. The processing speed of the previous processing method is up to about 200 mm/sec, and the difference is remarkable. Of course, the processing methods implemented in this embodiment significantly improve productivity compared to previous processing methods. Further, the splitting/cracking processing of the present embodiment is particularly effective when the crystal orientation of the processing pattern is increased by 4 (the orientation of the easy splitting/cleaving direction) and the addition of the predetermined line satisfies a specific relationship, but the application is not effective. In principle, it is also possible to accommodate the case where the two satisfy any relationship or the case where the workpiece is polycrystalline. In these cases, the direction in which the product is opened/opened relative to the predetermined line of processing does not have to be fixed, so that the starting point of the division may be generated by not appropriately setting the irradiation condition of the laser light between the irradiated regions. Practically problem-free processing within the allowable range of the embossing control. Error <Processing of Substrate with Heterogenous Material> Next, a substrate having a material heterogeneous material, which is formed by dividing the substrate of the above-mentioned cleaving/cracking processing material, from the metal film "with respect to The case where the twin is a tantalum layer or a semiconductor layer - the starting point is described as an object. Cheng Dao d 157901.doc 5 -31- 201219142 At this time, even if the first to third processing patterns are tried from the surface side of the heterogeneous material layer For the splitting/cracking process, the material of the heterogeneous material layer itself and the reason that the split/cleavage surface is difficult to form due to the cross-cutting of the interface of the different materials are difficult to form properly until the substrate with the luminescent material is occupied. Therefore, in the present embodiment, the heterogeneous material existing at the predetermined position is removed in advance, and then only the # | β L, A. cross-value base substrate is removed in advance in this embodiment. The above-described splitting/cracking processing is performed to form a starting point of the division of the substrate with the heterogeneous material. That is, the division of the substrate with the heterogeneous material is performed in the present embodiment. The formation of dots 'in short includes: pre-processing, which removes the layer of heterogeneous material present on the base substrate to expose the base substrate; and formal processing, which is processed by the above-described splitting/cracking process The exposed base substrate forms a division starting point. First, the basic processing form of pre-processing and formal reinforcement will be described. Fig. 9 is a schematic view showing that the workpiece iG is attached to the base substrate (8) to form a metal thin film layer 1〇2. A side cross-sectional view showing the processing state of a substrate having a heterogeneous material. Fig. 10 is a side cross-sectional view schematically showing a processing state when a workpiece 10 is bonded to a base substrate 101 to form a substrate of a semiconductor layer 103 with a heterogeneous material. 9 and FIG. 1 are both on the surface of the workpiece 10 (specifically, the surface 1〇2a of the ancient metal thin film layer 102 or the surface core of the semiconductor layer 1〇3) i'(4) is in the direction of the pattern The machining planned line L is set. In any case, the pre-processing laser light is transmitted from the specific emission source Ea to the workpiece 1()', and the pre-processing laser beam is used on the predetermined line L for the job. Scanning 9(a), Fig. 1(4)), thereby gradually removing the planned line L of the metal thin film layer ι 2 or the semiconductor layer 1 〇 3 along the line 157901.doc -32 - 201219142 In the vicinity, the i-th groove portion 1〇2g or i〇3g having the upper surface 101s of the base substrate 1〇1 as a bottom is gradually formed (FIG. 9(b), FIG. 1〇(b)). The upper surface 101s of the crucible 1 is pre-processed. When the pre-processing is performed, the pre-processing laser light LBa is irradiated onto the surface to be processed under the condition that the beam spots of the respective unit pulse lights overlap (cover) each other. The beam diameter of the laser beam is set to #(μιη), the scanning speed is set to V (mm/sec), and the repetition frequency is set to R (kHz). The number of times the laser light is irradiated to the same position is N. It is roughly calculated by xR/V. The irradiation of the pre-processing laser light LBa is performed under the irradiation condition that the number of times obtained by the formula is 1 and the value is at least 2. It is better to carry out under the irradiation conditions of Ν>1〇. In particular, it is preferable to set the repetition frequency R to be higher. On the other hand, the pre-processing laser light LBa may be irradiated with energy capable of partially removing the metal thin film layer 102 or the semiconductor layer 1〇3. It is not appropriate to perform irradiation of energy more than necessary, which may cause damage to the surface l〇ls of the base substrate 1〇1, which may result in poor completion of the split processing of the formal processing after the pre-machining. Further, the width of the first groove portion 1 〇 2g or 103 g is such that the light beam of the main processing laser beam LBb that is irradiated during the main processing after the pre-processing is passed through the first groove portion l〇2g or 1〇3g without any blockage. The degree is sufficient. The specific value depends on the concentration of the Να of the laser light irradiated to the base substrate 101, the thickness of the first groove portion 102g or 103 g (that is, the thickness of the metal thin film layer 1〇2 or the semiconductor layer 1〇3), and the use thereof. Which of the above first to third processing patterns is provided, but if it is provided on the base substrate 101 including sapphire, it is provided to contain m-nitride
、S 157901.doc -33- 201219142 物之半導體層103之被加工物時，較佳為⑺ 為25 μιη左右。 μπι左右 最大 只要滿足該等條件，則預加工田 找力工用雷射光LBa可使用UV雷 射、半導體雷射、C02雷射蓉春此印 2田耵等先則眾所周知之各種雷射種 類。再者，若於使用進行上诂辟 仃上述劈開/裂開加工時使用之具 有p s e c級脈寬之雷射光作*箱士 1卞马預加工用雷射光LBa之情形 時，如圖9(a)、圖l〇(a)所示，箱 、不，預加工用雷射光LBa較佳係 以其焦點位置位於被加工物1〇之表面上方之照射條件下進 行照射。藉此’即便預加工用雷射光叫之脈寬、重複頻 率、照射能量（脈衝能量）箄斑4 里J寻興正式加工用雷射光LBb相 同’亦可恰當地進行預加工。 然後，對藉由預加工而沿著加工預定線L呈線狀露出之 基底基板101之上表面1013，將自特定出射源訃出射之正 式加工用雷射光L B b 一邊沿著該上表面工〇 i s之延伸方向掃 描-邊照射（圖9(c)、圖Η)⑷），藉此對基底基板⑻進行沿 著加工預定線L上之劈開/裂開加工。藉此，於基底基板 101上沿著加工預定線匕而形成具有劈開•裂開面101W之 第2槽部l〇lg(圖9(d)、圖10(d))。此係正式加工。 正式加工係使基底基板1〇1產生沿著加工預定線L之劈開/ 裂開之加工，因此正式加工用雷射光1]813以能夠實現上述 第1至第3加工圖案之任一種之條件進行照射便可。 正式加工後獲得之第2槽部i〇lg(更具體而言係其前端 4 )稱為附有異質材料之基板即被加工物10之分割起點。 正式加工僅對具有硬脆性之基底基板101實施劈開/裂開加 157901.doc •34· 201219142 工，因此能夠於分割預定線之位置上恰當地產生劈開/裂 開。如此，於基底基板1 0 i形成前端部到達足夠深之部位 之第2槽部l〇1g。即，於附有異質材料之基板即被加工物 10上形成良好之分割起點。 以上係對附有異質材料之基板即被加工物丨0形成分割起 點時進行之加工之基本内容，但實際之加工形態根據將預 加工及正式加工之執行時間如何與被加工物10對於雷射光 出射源之相對移動進行組合，而分為以下兩種。 第1加工形態係於被加卫物霸於雷射光出射源之相對 移動進仃一次期間’將對於一個加工預定線之預加工與正 式加工一併進行。以下，將其稱為組合加工。 /、 2加工形態係藉由使被加工物10對於雷射光出射源相 工個加1定線進行預加以後，再次使被加 工物10相對移動，# 一 Μ職加工預定線進行正式加工。， 將其稱為兩階段加工。 <組合加工> :基===:，，—係以 屬㈣層1G2之附有異質材料q㈣被加4 圖U係模式性表示伴隨組合加卫 LBa與正式加工用雷 預加工用雷射光 圖。於圖"中，以技頭^ 之照射狀況之變化之側視 以别項AR1表示之朝向（圖式中水平方向右 157901.doc •35- 201219142 朝向）係被加工物Η)於加工時移動之朝向（移動方向 >，預加 工用雷射光LBa之出射源Ea與正式加工用雷射光咖之出 射源Eb於被加工物10之移動範圍上方位置處，於圖式水平 方向上以特定間隔而隔開配置，並自各出射源向鉛垂下方 出射雷射光。 首先，如⑷所示，將被加工物1〇配置於較出射源 Ea、Eb之配置位置更靠水平方向左側之位置(加工開始位 置）’以便使加工職線與移動方向—致。若自該狀態起 使被加工物10向箭頭AR1所示之朝向移動，則如圖η⑺）所 示，被加工物10之加工預定線首先到達預加工用雷射光 LBa之出射源以之正下方。最遲直至該時間為止自出射源 Ea出射預加工用雷射光LBa，伴隨之後的被加工物之之 移動，第1槽部l〇2g沿著加工預定線而不斷形成。進而， 若被加工物10移動，則如圖11(c)所示，被加工物1〇之加工 預疋線到達正式加工用雷射光[阶之出射源Eb之正下方。 最遲直至該時間為止自出射源Eb出射正式加工用雷射光 LBb，則伴隨之後的被加工物之10之移動，如圖u(d)所 不’於已經形成第1槽部l〇2g之位置上，第2槽部10Ig沿著 加工預定線而不斷形成。 藉由以上動作，於使被加工物10向箭頭AR1所示之朝向 移動一次期間’於加工預定線上之各位置上依序進行預加 /、正式加工這兩者。即，實現組合加工。設定複數個加 工預定線時’只要對該等加工預定線重複進行上述組合加 工便可。 157901.doc •36· 201219142 <雷射加工裝置概要> 其-入，對能夠貫現上述兩階岛4 &加工及組合加工之雷射加 工裝置進行說明。 圖12係概略地表示本實施形態之雷射加之基本 構成之模式圖。雷射加工農置50主要包括雷射光照射部 5〇A、觀察部50B、例如含有石英等透明構件且其上載置 被加工物10之載物台7、控制雷m置50之各種動作 (觀察動作、對準動作、加工動作等）之控制^。 雷射光照射部观包括出射雷射光之雷射m、及設 定雷射光照射至被加工物1〇時之光路之光學系統5,其係 對載物台7上載置之被加工物1〇照射雷射光之部位。再 者於圖12令，為了簡化圖示，僅表示了 —個雷射光源 SL，但本實施形態之雷射加工裝置5〇有時實際上包括兩個 雷射光源SL(第1雷射光源SL1、第2雷射光源sl2)，該情形 時光學系統5亦具有相對應之構成。包含雷射光源阢之光 學系統5之構成詳情將於下文敍述。 載物台7可藉由移動機構7111而於雷射光照射部5〇a與觀 察邠50B之間向水平方向移動。移動機構7m藉由未圖示之 驅動機構之作用而使載物台7於水平面内向特定之軸 方向移動。藉此，實現雷射光照射部5〇A内之雷射光照射 位置之移動、觀察部5〇B内之觀察位置之移動、及雷射光 照射部50A與觀察部50B之間之載物台7的移動等。再者， 移動機構7m亦可於水平驅動以外獨立地進行將特定旋轉軸 設為中心之水平面内之旋轉（Θ旋轉）動作。In the case of the workpiece of the semiconductor layer 103 of S 157901.doc -33- 201219142, it is preferable that (7) is about 25 μηη. Μπι左右 Max. As long as these conditions are met, the pre-processed field finder laser light LBa can use UV laser, semiconductor laser, C02 laser, Rongchun, this 2, Tian Tian, and other well-known various types of laser. Furthermore, if the laser light having a pulse width of psec is used for the above-described split/split processing, the laser light LBa of the pre-processing laser is used as shown in FIG. 9 (a). As shown in Fig. 10(a), the box or not, the pre-processing laser light LBa is preferably irradiated under the irradiation condition that the focus position is above the surface of the workpiece 1〇. Therefore, even if the pre-processing laser light is called the pulse width, the repetition frequency, and the irradiation energy (pulse energy), the laser beam LBb is the same as that of the X-ray processing laser processing, and the pre-processing can be appropriately performed. Then, the upper surface 1013 of the base substrate 101 which is linearly exposed along the planned line L by the pre-processing, the laser beam LB b for the final processing which is emitted from the specific emission source is along the upper surface. The extending direction of is is scanning-side irradiation (Fig. 9 (c), Fig. Η) (4)), whereby the base substrate (8) is subjected to splitting/cracking processing along the planned line L. Thereby, the second groove portion 100g having the split/cleavage surface 101W is formed on the base substrate 101 along the predetermined line 加工 (Fig. 9(d), Fig. 10(d)). This department is officially processed. In the main processing, the base substrate 1〇1 is subjected to the process of splitting/cleaving along the planned line L. Therefore, the laser light for the main processing 1] 813 can be realized under the conditions of any of the first to third processing patterns described above. It can be irradiated. The second groove portion i 〇 lg (more specifically, the tip end 4 thereof) obtained after the main processing is referred to as a division starting point of the workpiece 10 which is a substrate on which a heterogeneous material is attached. Formal processing only performs splitting/cracking of the base substrate 101 having a hard and brittleness, so that the splitting/cracking can be appropriately performed at the position where the predetermined line is divided. Thus, the second groove portion 10g is formed in the base substrate 110 from the portion where the tip end portion reaches a sufficiently deep portion. That is, a good starting point of division is formed on the workpiece 10 which is a substrate on which a heterogeneous material is attached. The above is the basic content of the processing performed when the substrate with the heterogeneous material, that is, the workpiece 丨0, forms the starting point of the division, but the actual processing form is based on how the execution time of the pre-processing and the formal processing is related to the workpiece 10 for the laser light. The relative movements of the exit sources are combined and divided into the following two types. The first processing mode is performed during the relative movement of the object to be irradiated by the laser light source, and the pre-processing and the normal processing for one planned line are performed together. Hereinafter, this is called a combined process. The processing pattern is pre-applied by adding 1 line to the laser light source by the workpiece 10, and the workpiece 10 is again moved relatively, and the processing line is processed. , called it two-stage processing. <Combination processing>: base ===:,,- is based on the genus (four) layer 1G2 with the heterogeneous material q (four) is added 4 Figure U system pattern with the combined reinforcement LBA and the official processing thunder pre-processing thunder Light map. In the figure, the side view of the change in the irradiation condition of the head ^ is the direction indicated by the other item AR1 (the direction in the horizontal direction is 157901.doc • 35 - 201219142), and the workpiece is processed. The direction of movement (moving direction), the source Ea of the pre-processing laser light LBa and the emission source Eb of the laser beam for the final processing are at a position above the moving range of the workpiece 10, and are specified in the horizontal direction of the drawing. The laser beam is emitted from the respective emission sources in a vertically downward direction. As shown in (4), the workpiece 1 is placed at a position on the left side in the horizontal direction from the arrangement position of the emission sources Ea and Eb ( The machining start position is 'in order to move the machining line and the moving direction. If the workpiece 10 is moved in the direction indicated by the arrow AR1 from this state, the processing of the workpiece 10 is scheduled as shown in Fig. η(7)). The line first reaches the source of the pre-processing laser light LBa directly below it. At the latest, the pre-processing laser light LBa is emitted from the emission source Ea at the latest, and the first groove portion 10g is continuously formed along the planned line with the subsequent movement of the workpiece. Further, when the workpiece 10 is moved, as shown in Fig. 11(c), the processing pre-twist line of the workpiece 1〇 reaches the laser beam for the final processing (the source Eb of the order is directly below). At the latest, until the exit source Eb emits the laser beam LBb for the final processing, the movement of the workpiece 10 afterwards is delayed, and the first groove portion l2g is formed as shown in Fig. 51(d). At the position, the second groove portion 10Ig is continuously formed along the planned line. By the above operation, both the pre-addition and the main processing are sequentially performed at each position on the planned line of processing while moving the workpiece 10 in the direction indicated by the arrow AR1. That is, combined processing is realized. When a plurality of processing lines are set, 'as long as the combination processing is repeated for the processing lines. 157901.doc •36·201219142 <Survey of laser processing apparatus> The laser processing apparatus capable of performing the above-described two-stage island 4 & processing and combined processing will be described. Fig. 12 is a schematic view showing the basic configuration of the laser beam according to the embodiment. The laser processing agricultural unit 50 mainly includes a laser light irradiation unit 5A, an observation unit 50B, and, for example, a transparent member including quartz, and a stage 7 on which the workpiece 10 is placed, and various operations for controlling the lightning 50. Control of actions, alignment actions, machining actions, etc.). The laser light irradiation unit includes an optical system 5 that emits laser light of the laser light and an optical path that sets the optical path when the laser beam is irradiated to the workpiece 1 to illuminate the workpiece 1 on the stage 7 The part of the light. Further, in FIG. 12, only one laser light source SL is shown for simplification of the illustration, but the laser processing apparatus 5 of the present embodiment sometimes includes two laser light sources SL (the first laser light source). SL1, second laser light source sl2), in this case, the optical system 5 also has a corresponding configuration. Details of the composition of the optical system 5 including the laser source will be described below. The stage 7 is movable in the horizontal direction between the laser beam irradiation unit 5A and the observation unit 50B by the moving mechanism 7111. The moving mechanism 7m moves the stage 7 in a specific axial direction in the horizontal plane by the action of a driving mechanism (not shown). Thereby, the movement of the laser beam irradiation position in the laser beam irradiation unit 5A, the movement of the observation position in the observation unit 5B, and the stage 7 between the laser beam irradiation unit 50A and the observation unit 50B are realized. Move, etc. Further, the moving mechanism 7m can independently perform a rotation (Θ rotation) operation in a horizontal plane in which the specific rotation axis is centered, in addition to the horizontal drive.
S 15790I.doc -37. 201219142 又，雷射加工裝置50中可適當地切換正面觀察與背面觀 察。藉此，可靈活且迅速地進行對應於被加工物1〇之材質 或狀態之最佳觀察。 載物台7係由石英等透明構件形成，其内部設置有作為 用以將被加I物10吸附固定之吸氣通道之未圖示之抽吸用 配管。抽吸用配管例如藉由機械加工於載物台7之特定位 置削孔而設置。 於被加工物10載置於載物台7上之狀態下，利用例如抽 吸泵等抽吸機構11對抽吸用配管進行抽吸，而對抽吸用配 管之載物台7載置面側前端所設之抽吸孔賦予負壓，藉此 將被加工物1〇(及固定片4)固定於載物台7上。再者，於圖 12中，例示有作為加工對象之被加工物〗〇黏貼於固定片4 上之情形，較佳為於固定片4之外邊緣部配置用以固定該 固定片4之未圖示之固定環。 <照明系統及觀察系統> 觀察部50B構成為相對於載物台7上載置之被加工物⑺而 重疊進行自载物台7上方照射落射照明光源s丨之落射照明 光L1以及自斜光照明光源S2照射斜光透過照明光L2，且進 行自載物台7之上方側利用正面觀察機構6之正面觀察、以 及自載物台7下方側利用背面觀察機構i 6之背面觀察。 具體而s，自落射照明光源S1發出之落射照明光L1由省 略圖示之鏡筒内所設之半反射鏡9反射後，照射於被加工 物10。而且，觀察部50B包含正面觀察機構6，此正面觀察 機構6包含设於半反射鏡9上方（鏡筒上方）之CCD相機6a及 157901.doc •38· 201219142 連接於該CCD相機6a之監視器6b，可於照射落射照明光u 之狀態下即時地觀察被加工物1 〇之明視野像。 又，於觀察部50B中，載物台7下方更佳包含背面觀察機 構16，此背面觀察機構16包含設於下述半反射鏡19下方 (鏡筒下方）之CCD相機16a及連接於該CCD相機16a之監視 器16b。再者，監視器16b與正面觀察機構6包含之監視器 6b亦可通用。 而且，自載物台7下方包含之同軸照明光源“發出之同 轴照明光L3由省略圖示之鏡筒内所設之半反射鏡19反射， 並被聚光透鏡18聚光之後，可透過載物台7而照射於被加 工物1〇。更佳為，於載物台7下方包含斜光照明光源S4， 可將斜光照明光L4透過載物台7而照射於被加工物1〇。該 等同轴照明光源S3及斜光照明光源84較佳為於例如被加工 物10之表面侧有不透明金屬層等且表面側之觀察因該金屬 層產生反射而困難之情形等、自背面側觀察被加工物1〇時 使用。 <控制器> 控制器1還包含控制上述各部之動作而實現被加工物i 〇 之加工處理之控制部2、及儲存控制雷射加工裝置5〇之動 作之程式3p及加工處理時參照之各種資料之記憶部3。 控制部2係利用例如個人電腦或微電腦等通用電腦而實 現，藉由將記憶部3中儲存之程式3p讀入該電腦並加以執 行，而實現各種構成要素作為控制部2之功能性構成要 素。 157901.doc -39- 201219142 具體而言，控制部2主要包含：驅動控制部21，其控制 移動機構7m之載物台7之驅動及聚光透鏡18之合焦動作 等、與加工處理相關之各種驅動部分之動作；攝像控制部 22 ’其控制CCD相機6a及16a之攝像；照射控制部23，其 控制雷射光源SL之雷射光LB之照射及光學系統5之光路設 定態樣；吸附控制部24，其控制利用抽吸機構11將被加工 物10向載物台7吸附固定之動作；及加工處理部25，其根 據提供之加工位置資料D1(下述）及加工模式設定資料 D2(下述），執行對加工對象位置之加工處理。 記憶部3係利用r0M4 RAM及硬盤等記憶媒體而實現。 再者，記憶部3可為由實現控制部2之電腦之構成要素實現 之態樣，於硬盤之情形時亦可為設置於該電腦以外之態 纪憶邵3中儲存有自外部提供 ’ ^ /yw 1{j 定之加工預定線之位置之加工位置資料D卜而且，記憶 3中預先#1存有加工模式設定f_，其中按各加工 而描述了雷射光之各參數相關之條件或光學系統5之光 ^定條件或载物台7之㈣條件（❹其等之可設定⑽ 再者由#作員提供給雷射加工裝置％之 較佳利用控制器1中實現之⑽來進行。例如，根:力 理㈣之作用而由则提供加工處理據加々 該加工處理用選單，_ 單操作員根連 件之輸入等。 〃'加工模式之選擇、或加工舍 I57901.doc -40· 201219142 ::有如上構成之雷射加工裝置”，藉 魏發出並經過光學系統5之雷射細之照射、盘;= =定著被加工物H)之載物台7之移動加以組合而 1過光學系統5之雷射光lb相對於姑 對於被加工物1 〇相對掃沪， 一邊進行被加工物10之加工。屌 田 1至第3加工圖案之全部。原理上而^可貫現上述第 <對準動作> 於雷射加工裝置50中，實施加工處理之前， 5⑽進行微調整被加工㈣之配置位置之對準動作。對: =係為了使被加工物10規定之灯座標軸與載物台7之座 U 一致而進行之處理。於騎上述加項案之加工之情 形時，為了使被加工物之結晶方位、加工預定線及雷射光 之知描方向毅各加卫圖案中求出之特定關，該對準處 理較為重要。 T半慝 對準動作可應用周知技術而執行，只要對應於加工圖案 以適當態樣進行便可。例如’將使们個母板製作出之複 數個7L件晶片切出等情形時，若為被加工物1〇之表面形成 有重複圖案之情形，則藉由使用圖案匹配等手法而實現適 當之對準動作。該情形時，簡單而言’由CCD相機6a或者 16a取得被加工物1〇上形成之複數個對準用標記之攝像圖 像，根據該等攝像圖像之攝像位置之相對關係，加工處理 部25確定對準量，驅動控制部21根據該對準量，藉由移動 機構7m而使載物台7移動，藉此實現對準。 藉由進行該對準動作，可準確地確定加工處理之加工位S 15790I.doc -37. 201219142 Further, the front view and the back view can be appropriately switched in the laser processing apparatus 50. Thereby, the best observation of the material or state corresponding to the workpiece 1 can be performed flexibly and quickly. The stage 7 is formed of a transparent member such as quartz, and a suction pipe (not shown) as an intake passage for adsorbing and fixing the object 10 is provided inside. The suction pipe is provided, for example, by machining a hole in a specific position of the stage 7. In a state in which the workpiece 10 is placed on the stage 7, the suction pipe is suctioned by a suction mechanism 11 such as a suction pump, and the surface of the stage 7 of the suction pipe is placed. The suction hole provided at the front end of the side is given a negative pressure, whereby the workpiece 1 (and the fixing piece 4) is fixed to the stage 7. In addition, in FIG. 12, the workpiece to be processed is affixed to the fixing piece 4, and it is preferable that the outer side of the fixing piece 4 is provided with a fixing means for fixing the fixing piece 4. Show the fixed ring. <Illumination System and Observation System> The observation unit 50B is configured such that the object to be processed (7) placed on the stage 7 is superimposed, and the illumination light L1 and the self-slanting light that are irradiated from the upper surface of the stage 7 to the illumination light source s are superimposed. The illumination light source S2 illuminates the oblique light transmission illumination light L2, and is viewed from the front side of the upper stage 7 by the front observation mechanism 6 and from the lower side of the stage 7 by the back surface observation mechanism i6. Specifically, the epi-illumination light L1 emitted from the epi-illumination light source S1 is reflected by the half mirror 9 provided in the lens barrel, and is irradiated onto the workpiece 10. Further, the observation unit 50B includes a front observation mechanism 6 including a CCD camera 6a and 157901.doc • 38·201219142 which are disposed above the half mirror 9 (above the lens barrel) and are connected to the monitor of the CCD camera 6a. 6b, the bright field image of the workpiece 1 can be instantly observed while the epi-illumination light u is being irradiated. Further, in the observation unit 50B, the lower surface of the stage 7 preferably includes a rear view mechanism 16 including a CCD camera 16a provided below the half mirror 19 (below the lens barrel) and connected to the CCD. The monitor 16b of the camera 16a. Further, the monitor 16b and the monitor 6b included in the front observation mechanism 6 may be used in common. Further, the coaxial illumination light source L3 included under the stage 7 is reflected by the half mirror 19 provided in the lens barrel (not shown), and is condensed by the collecting lens 18 to be permeable. The stage 7 is irradiated onto the workpiece 1〇. More preferably, the oblique illumination source S4 is included below the stage 7, and the oblique illumination light L4 can be transmitted through the stage 7 to be irradiated onto the workpiece 1〇. The coaxial illumination light source S3 and the oblique illumination light source 84 are preferably viewed from the back side, for example, when the surface of the workpiece 10 has an opaque metal layer or the like, and the observation of the surface side is difficult due to reflection of the metal layer. The workpiece 1 is used. <Controller> The controller 1 further includes a control unit 2 that controls the operation of the above-described respective parts to realize the processing of the workpiece i, and an operation of the storage-controlled laser processing apparatus 5 The program 3p and the memory unit 3 for referring to various types of data during processing. The control unit 2 is realized by a general-purpose computer such as a personal computer or a microcomputer, and the program 3p stored in the memory unit 3 is read into the computer and executed. And realize each The component is a functional component of the control unit 2. 157901.doc -39- 201219142 Specifically, the control unit 2 mainly includes a drive control unit 21 that controls driving and concentrating of the stage 7 of the moving mechanism 7m. The operation of various driving portions related to the processing of the lens 18, the imaging control unit 22' controls the imaging of the CCD cameras 6a and 16a, and the illumination control unit 23 controls the laser light LB of the laser light source SL. The light path setting pattern of the illumination and optical system 5; the adsorption control unit 24 controls the operation of adsorbing and fixing the workpiece 10 to the stage 7 by the suction mechanism 11; and the processing unit 25 according to the processing position provided Data D1 (described below) and processing mode setting data D2 (described below) are executed to process the processing target position. The memory unit 3 is realized by a memory medium such as r0M4 RAM or a hard disk. The realization of the components of the computer of the control unit 2 can be performed in the case of a hard disk, and the processing reservation of ' ^ /yw 1{j is provided from the outside in the state of the computer. The processing position data of the position of the line D, and the processing mode setting f_ in the memory #3 in advance #1, wherein the conditions related to the parameters of the laser light or the optical conditions of the optical system 5 or the load are described for each processing. (4) conditions of the stage 7 (❹) can be set (10) and then provided by the #人 to the laser processing device % is preferably implemented in the controller 1 (10). For example, the root: the role of the force (four) However, the processing is added according to the processing menu, _ single operator root input, etc. 〃 'Processing mode selection, or processing room I57901.doc -40· 201219142 ::The above composition The laser processing device" is irradiated by Wei and irradiated by the laser system 5, and the disk is rotated; = = the movement of the stage 7 of the workpiece H) is combined to pass the laser light of the optical system 5 The processing of the workpiece 10 is performed while the relative processing of the workpiece 1 is relatively swept.屌 Tian 1 to the 3rd processing pattern. In principle, the above-mentioned "alignment operation" can be performed in the laser processing apparatus 50, and before the processing is performed, 5 (10) performs an alignment operation of finely adjusting the position of the processed (four). Pair: = The process is performed in order to match the lamp coordinate axis defined by the workpiece 10 with the seat U of the stage 7. In the case of riding the processing of the above-mentioned additional item, the alignment process is important in order to make the crystal orientation of the workpiece, the planned line of processing, and the direction of the laser light to be determined in each of the patterns. The T-half alignment action can be performed using well-known techniques as long as it corresponds to the processing pattern in an appropriate manner. For example, when a plurality of 7L wafers produced by a mother board are cut out, if a repeating pattern is formed on the surface of the workpiece, the pattern is matched and the like is used. Align the action. In this case, simply, the captured image of the plurality of alignment marks formed on the workpiece 1 is obtained by the CCD camera 6a or 16a, and the processing unit 25 is processed based on the relative relationship between the imaging positions of the captured images. The alignment amount is determined, and the drive control unit 21 moves the stage 7 by the moving mechanism 7m in accordance with the amount of alignment, thereby achieving alignment. By performing the alignment action, the processing position of the processing can be accurately determined
S 157901.doc -41 - 201219142 置。再者，對準動作結束之後，載置有被加工物1〇之載物 台7向雷射光照射部50A移動，㈣進行照射雷射光⑸之 加工處理。再者，載物台7自觀察部遍向雷射光照射部 5〇A之移動’係為了保證對準動作時假定之加玉預定位置 與實際加工位置不發生偏差。 <面向組合加工之光學系統構成與雷射加工裝置之動 形態> 其-人，對雷射加工裝置50為了實現對於附有異質材料之 基板即被加工物10之組合加工而具備之具體構成（主要係 包含雷射光源SL之光學系統5之構成）、與基於該構成之雷 射加工裝置50之動作形態進行說明β用以實現組合加工之 光予系統5之具體構成主要有三種，用以實現組合加工之 動作形態各不相同。 圖13係表示組合加工之第丨形態之狀況之圖。圖14及圖 15係表示組合加工之第2形態之狀況之圖。圖“係表示組 合加工之第3形態之狀況之圖。 該等第1至第3形態之雷射加工裝置5〇之光學系統5之共 通方面在於：構成為形成有自第！雷射光源SL1直至載物台 7之第1光路OP1、與自第2雷射光源SL2直至載物台7之第2 光路OP2。再者，將自第射光源SL1發出並於第i光路 OP1上前進之雷射光LB設為第1雷射光LB1，將自第2雷射 光源SL2發出並於第2光路〇P2上前進之雷射光乙3設為第2 雷射光LB2。又，於圖13至圖16中，圖式左右方向設為對 一個加工預定線進行加工時之載物台7之移動方向。 15790l.doc •42· 201219142 進而第1至第3形態之任意形態中，均於第1光路〇p 1 及第2光路〇ρ2之途中具備擴束器51(511 , 512)、及物鏡系 統 52(521、522) 〇 為了轉換雷射光LB(第1雷射光LB1及第2雷射光LB2)之 光路朝向，光學系統5中亦可於適當位置處設置恰當個數 之反射鏡5a。圖13至圖16中例示有於第丨光路〇ρι上設置一 個反射鏡5a ’於第2光路0P2上設置兩個反射鏡化之情形。 再者，於本實施形態之雷射加工裝置5〇中，自雷射光源 SL出射之雷射光LB之偏光狀態既可為圓偏光，亦可為直 線偏光。|中’於直線偏光之情形時，自結晶性被加工材 料中之加工剖面之彎曲與能量吸收率之觀點出發，較佳為 偏光方向與掃描方向大體平行，例如兩者所成角處於土 1〇 以内。 又，§出射光係直線偏光時，光學系統5較佳具備衰減 器5b。衰減器5b係配置於雷射光[8之光路上之適當位置 處’擔當調整出射雷射光LB之強度之作用β 以下’依序說明各形態之詳細内容。 (第1形態） 圖13所示之第i形態係使用第】雷射光LBi作為預加工用 雷射光LBa，使用第2雷射光LB2作為正式加工用雷射光 LBb，藉此進行組合加工。 因此，至少第2雷射光源SL2需要使用發出脈寬為級 之雷射光之光源（亦稱為pSec雷射光源），以便能夠適當地 於正式加工中進行上述劈開/裂開加工。更具體而言Y使 15790Ldoc •43- 201219142 用發出波長為500 nm〜1600 nm、且脈寬為1 psec〜50 psec 左右之雷射光。又，第2雷射光LB2之重複頻率R較佳為1〇 kHz〜200 kHz左右、雷射光之照射能量（脈衝能量）較佳為 〇. 1 μ】~50 μ】左右。 另一方面，第1雷射光源SL1既可使用與第2雷射光源 SL2相同之光源，亦可如上述般使用uv雷射、半導體雷 射、C〇2雷射等先前眾所周知之發出各種雷射光之光源。 無論哪種情形時，均係自第1雷射光源SL1以能夠良好形成 第1槽部102g及103g之照射條件出射第！雷射光lb 1。 又’於第1形態中’如圖13所示’第1光路ορι上具備之 物鏡系統521中配置於最接近載物台7之位置之物鏡52le、 與第2光路OP2上具備之物鏡系統522中配置於最接近載物 台7之位置之物鏡522e’於載物台7之圖式水平方向上之移 動範圍之上方位置’係以特定間隔而隔開配置。藉此，第 1光路OP1上具備之物鏡521e相當於預加工用雷射光LBa之 直接出射源Ea，第2光路OP2上具備之物鏡522e相當於正式 加工用雷射光LBb之直接出射源Eb。再者，於圖13中，物 鏡52le係配置於向於物鏡522e之位置上，該例示與圖 9(a)、圖10(a)所示内容同樣地，係於使用具有…“級脈寬 之第1雷射光LB1作為預加工用雷射光LBa時，使其焦點位 置位於被加工物10之表面之上方。 而且’對一個加工預定線進行組合加工時，以與圖n(a) 所示之預加工用雷射光LBa之出射源Ea、正式加工用雷射 光LBb之出射源Eb、及被加工物1 〇之配置位置吻合之方 157901.doc -44· 201219142 式，分別配置物鏡521e、物鏡522e、及載物台7上載置之 被加工物1 〇。 自該狀態開始，使載置有被加工物1〇之載物台7向箭頭 AR2所示之朝向移動。然後，如圖11所示，當被加工物10 • 料物鏡521e及物鏡522e時，以能夠實現預加工及正式加 • 工之照射條件，分別照射相#於預加工用雷射光⑽之第！ 雷射光LB1 '及對應於正式加工用雷射光LBb之第2雷射光 LB2。藉此，實現沿著加工預定線之組合加工。 對彼此平行之複數個加工預定線進行組合加工時，只要 於一個加工預定線之加工結束之後，對下一加工預定線重 複上述處理次序便可。 (第2形態） 於上述第〗形態之情形時，僅於載物台7向箭頭八们所示 之朝向移動期間，照射作為預加工用雷射光LBa之第i雷射 光LB1與作為正式加工用雷射光LBb之第2雷射光[Μ以 便進行組合加工。藉此，騎組合加工時之載物台7與出 射源Ea及Eb之相對移動方向僅為一個方向。此時之雷射光 LB(第i雷射光LB1及第2雷射光LB2)之掃描亦稱為單向掃 描。 相對於此，於第2形態令，使載物台7向—個方向移動並 完成對於一個加工預定線之加工之後，使载物台7向相反 方向移動時，以其他加工預定線為對象而進行雷射光LBi 掃描。此時之雷射光LB之掃描亦稱為雙向掃描。 圖14表示於第2形態中藉由使載物台7向與第態相同 157901,doc -45- 201219142 之朝向移動而進行加工時之狀況’圖15表示藉由使載物台 7向與圖14所示朝向相反之朝向移動而進行加工時之狀 況。 根據圖14及圖15可知，第2形態中使用之雷射加工裝置 50之構成要素之大部分係與第1形態中使用之雷射加工裝 置50共通。其中，第2形態與第1形態之不同點在於：具備 物鏡升降機構53 ;及苐1雷射光源SL1與第2雷射光源SL2 均為psec雷射光源。此處，物鏡升降機構53藉由基於驅動 控制部21之控制而動作之未圖示之驅動機構，使第1光路 OP1具備之物鏡系統521與第2光路OP2具備之物鏡系統522 自由升降。 再者，自第1雷射光源SL1發出之第1雷射光LB1、與自 第2雷射光源SL2發出之第2雷射光LB2之發光波長係設定 為相同值。另一方面，第1雷射光LB1與第2雷射光LB2之 其他照射條件可於作為預加工用雷射光LBa照射時與作為 正式加工用雷射光LBb照射時，週期性地更替。 藉由具有上述構成，而實現雙向掃描之組合加工。即， 當使載物台7向圖14中以箭頭AR3所示之朝向（圖式水平方 向右向）移動（以下稱為順向移動）時，與第丨形態同樣地， 照射第1雷射光LB1作為預加工用雷射光LBa，照射第2雷 射光LB2作為正式加工用雷射光⑽。另一方面當使载 物〇向反方向即圖15中以箭頭AR4所示之朝向（圖式水平 方向左向）移動（以下稱為逆向移動）時，照射第2雷射光 乍為預加工用雷射光LBa，並照射第ι雷射光LB〗作為 157901.doc •46· 201219142 正式加工用雷射光LBb。 自其他觀點而言’每當切換順向移動與逆向移動時，預 加工用雷射光LBa之出射源Ea與正式加工用雷射光LBb之 出射源Eb係於物鏡521e與物鏡522e之間更替。 該等係藉由使利用物鏡升降機構53之作用進行之物鏡系 統521、522之配置位置之調整、與基於照射控制部23之_ 制進行之對應於各雷射光LB之作用之照射條件之設定，與 載物台7之移動同步進行而實現。更詳細而言，此時物鏡 升降機構53於順向移動及逆向移動時，係以作為正式加工 用雷射光LBb之雷射光LB之焦點位置與被加工物丨〇之表面 (更詳細而言係基底基板101之上表面）吻合之方式，作為預 加工用雷射光LBa之雷射光LB之焦點位置位於被加工物1〇 上方之方式，來調整物鏡系統521及522之配置位置。 當設定彼此平行之複數個加工預定線時，只要重複進行 順向移動之加工與逆向移動之加工便可。 藉由此種方式利用雙向掃描來進行組合加工，因此於進 行第2形態之加工之情形時，與第丨形態般藉由單向掃描進 行組合加工之情形相比，可縮短加工時間。 (第3形態） 第3形態藉由與第2形態不同之構成來實現雙向掃描。 具體而言，其與第1形態之相同之處在於：使用藉由第^ 光路OP 1之第1雷射光LB 1作為預加工用雷射光LBa，使用 藉由第2光路0P2之第2雷射光LB2f為正式加工用雷射光 LBb ’藉此進行組合加工。 157901.doc -47- 201219142 另方面，如圖16所示，於第3形態之雷射加工裝 用笛1本々 第1光路OP1利用半反射鏡54而分支順向 ^ 〇Ρΐα與逆向用第1光路ΟΡίβ這兩個光路，且八 別设置於物錄& ^ .、、先明以、521β)上。又，光學系統5中 八、選擇機構55。光路選擇機構55基於照射控制邛23 之控制而進行動作，當載物台7如箭頭總所示進行順向 移動時一選—地選擇順向用第1光路〇Ρ1α作為第i雷射光 LB1之光路，當載物台7進行逆向移動時二選—地選擇逆向 用第1光路0P1P作為第1雷射光⑻之光路。再者，光路選 擇機構55係藉由眾所周知之切換擋閘等來實現。 即，於第3形態中，正式加工用雷射光咖之出射源处 始終係設置於第2光路⑽上之物鏡仙，與此相對，預加 工用雷射光LBa之出射源以因載物台7之移動方向不同而不 同。當載物台7進行順向移動時，設置於順向用第】光路 〇Ρ1α上之物鏡521ea變成預加工用雷射光乙仏之出射源 Ea，當載物台7進行逆向移動時，設置於逆向用第^光路 ΟΡΙβ上之物鏡521ep變成預加工用雷射光LBa之出射源S 157901.doc -41 - 201219142 Set. Further, after the alignment operation is completed, the stage 7 on which the workpiece 1 is placed is moved to the laser beam irradiation unit 50A, and (4) the processing for irradiating the laser beam (5) is performed. Further, the movement of the stage 7 from the observation portion to the laser beam irradiation portion 5A is performed so as to ensure that the predetermined position of the jade is not deviated from the actual machining position when the alignment operation is ensured. <Optical system configuration for combined processing and dynamic configuration of laser processing apparatus> The specific processing of the laser processing apparatus 50 for the processing of the combined processing of the workpiece 10 with a substrate having a foreign material is provided. The configuration (mainly including the configuration of the optical system 5 including the laser light source SL) and the operation mode of the laser processing apparatus 50 based on the configuration are mainly described in three specific configurations of the optical light system 5 for performing combined processing. The form of action used to achieve combined processing varies. Fig. 13 is a view showing the state of the third embodiment of the combined processing. Fig. 14 and Fig. 15 are views showing the state of the second aspect of the combined processing. The figure "is a view showing the state of the third aspect of the combined processing. The common aspect of the optical system 5 of the laser processing apparatus 5 of the first to third aspects is that the first laser light source SL1 is formed. Up to the first optical path OP1 of the stage 7, and the second optical path OP2 from the second laser light source SL2 to the stage 7. Further, the thunder that is emitted from the first light source SL1 and advanced on the i-th optical path OP1 The incident light LB is set as the first laser light LB1, and the laser light B3 emitted from the second laser light source SL2 and advanced on the second optical path 2P2 is set as the second laser light LB2. Further, in FIGS. 13 to 16 The left and right directions of the drawing are set to the moving direction of the stage 7 when processing one planned line. 15790l.doc •42· 201219142 Further, in any of the first to third aspects, the first optical path 〇p In the middle of the first and second optical paths 〇ρ2, the beam expanders 51 (511, 512) and the objective lens system 52 (521, 522) are provided to convert the optical paths of the laser light LB (the first laser light LB1 and the second laser light LB2). In the orientation, an appropriate number of mirrors 5a may be disposed in the optical system 5 at appropriate positions. The illustrations are shown in FIG. 13 to FIG. In the laser processing apparatus 5A of the present embodiment, the laser light emitted from the laser light source SL is provided in the laser beam device 0P2. The polarization state of LB may be circularly polarized or linearly polarized. In the case of linear polarization, it is preferably polarized from the viewpoint of bending and energy absorption rate of the processed profile in the crystalline material to be processed. The direction is substantially parallel to the scanning direction, for example, the angle between the two is within 1 。. Further, when the light is linearly polarized, the optical system 5 preferably includes the attenuator 5b. The attenuator 5b is disposed in the laser light [8 At the appropriate position on the optical path, 'the role of adjusting the intensity of the emitted laser light LB β is described below.' The details of each form are described in order. (First form) The i-th form shown in Fig. 13 uses the first laser light LBi as the The pre-processing laser light LBa uses the second laser light LB2 as the main processing laser light LBb to perform the combined processing. Therefore, at least the second laser light source SL2 needs to use a light source that emits laser light having a pulse width of the order. (also known as pSec laser source), in order to be able to perform the above-mentioned cleaving/cracking process properly in formal processing. More specifically, Y makes 15790Ldoc •43-201219142 emit wavelengths of 500 nm to 1600 nm, and pulse width The laser light is about 1 sec to about 50 psec. Further, the repetition frequency R of the second laser light LB2 is preferably about 1 〇 kHz to 200 kHz, and the irradiation energy (pulse energy) of the laser light is preferably 〇. 1 μ] On the other hand, the first laser light source SL1 may use the same light source as the second laser light source SL2, or may use a uv laser, a semiconductor laser, a C〇2 laser, or the like as described above. Light sources that have previously been known to emit a variety of laser light. In either case, the first laser light source SL1 is emitted at an irradiation condition capable of forming the first groove portions 102g and 103g well! Laser light lb 1. Further, in the first embodiment, the objective lens 52le disposed at the position closest to the stage 7 and the objective lens system 522 provided on the second optical path OP2 in the objective lens system 521 provided in the first optical path ορι are shown in FIG. The position of the objective lens 522e' disposed at the position closest to the stage 7 in the horizontal direction of the stage of the stage 7 is spaced apart at a predetermined interval. Thereby, the objective lens 521e provided in the first optical path OP1 corresponds to the direct emission source Ea of the pre-processing laser light LBa, and the objective lens 522e provided in the second optical path OP2 corresponds to the direct emission source Eb of the laser beam LBb for the normal processing. Further, in Fig. 13, the objective lens 52le is disposed at a position facing the objective lens 522e, and this example is similar to the contents shown in Figs. 9(a) and 10(a), and has a "stage pulse width". When the first laser light LB1 is used as the pre-processing laser light LBa, the focus position is positioned above the surface of the workpiece 10. Further, when a combined processing line is processed, it is shown in Fig. n(a). The objective lens 521e and the objective lens are respectively arranged such that the source Ea of the pre-processing laser light LBa, the emission source Eb of the laser beam LBb for the main processing, and the arrangement position of the workpiece 1 吻合 match each other 157901.doc -44·201219142 522e and the workpiece 1 placed on the stage 7. From this state, the stage 7 on which the workpiece 1 is placed is moved in the direction indicated by the arrow AR2. When the workpiece 10 is used for the objective lens 521e and the objective lens 522e, the irradiation of the pre-processing and the official processing is performed, respectively, and the laser beam LB1' of the pre-processing laser light (10) is irradiated. The second laser light LB2 of the laser light LBb for the official processing is realized. The combined processing of the predetermined lines is performed. When the plurality of processing lines parallel to each other are combined, the processing sequence may be repeated for the next planned line after the processing of one planned line is completed. In the case of the above-described first embodiment, only the i-th laser light LB1 as the pre-processing laser light LBa and the main processing laser light LBb are irradiated while the stage 7 is moving in the direction indicated by the arrow eight. The second laser light is Μ so that the combined processing is performed. Thereby, the relative moving direction of the stage 7 and the exit sources Ea and Eb during the combined processing is only one direction. At this time, the laser light LB (the i-th laser light LB1) The scanning of the second laser light LB2) is also referred to as a one-way scanning. In contrast, in the second mode, the carrier 7 is moved in one direction and the processing for one processing line is completed. When the stage 7 moves in the opposite direction, the laser beam LBi is scanned for other planned lines. The scanning of the laser light LB at this time is also called bidirectional scanning. Fig. 14 shows the stage by the stage in the second embodiment. 7-way and The state in which the first state is the same as 157901, doc -45 - 201219142 when the workpiece is moved in the direction of processing" FIG. 15 shows the state when the stage 7 is moved in the direction opposite to the direction shown in FIG. 14 and FIG. 15, it is understood that most of the components of the laser processing apparatus 50 used in the second embodiment are common to the laser processing apparatus 50 used in the first embodiment. The difference between the second aspect and the first embodiment is different. The objective lens lifting mechanism 53 is provided; and the 苐1 laser light source SL1 and the second laser light source SL2 are both psec laser light sources. Here, the objective lens lifting and lowering mechanism 53 freely moves up and down the objective lens system 521 provided in the first optical path OP1 and the objective lens system 522 included in the second optical path OP2 by a drive mechanism (not shown) that is operated by the control of the drive control unit 21. Further, the emission wavelengths of the first laser light LB1 emitted from the first laser light source SL1 and the second laser light LB2 emitted from the second laser light source SL2 are set to the same value. On the other hand, the other irradiation conditions of the first laser light LB1 and the second laser light LB2 can be periodically replaced when irradiated as the preliminary processing laser light LBa and when it is irradiated as the main processing laser light LBb. By having the above configuration, the combined processing of the two-way scanning is realized. In other words, when the stage 7 is moved in the direction indicated by the arrow AR3 in FIG. 14 (the right direction in the horizontal direction of the drawing) (hereinafter referred to as the forward movement), the first laser light is irradiated in the same manner as in the third embodiment. LB1 is used as the laser beam for pre-processing LBa, and the second laser beam LB2 is irradiated as the laser beam for final processing (10). On the other hand, when the load is moved in the opposite direction, that is, in the direction indicated by the arrow AR4 in FIG. 15 (leftward in the horizontal direction of the drawing) (hereinafter referred to as reverse movement), the second laser stop is irradiated for pre-processing. Laser light LBa, and illuminate the ι laser light LB as 157901.doc • 46· 201219142 Official processing laser light LBb. From another point of view, the output source Ea of the pre-processing laser light LBa and the emission source Eb of the final processing laser light LBb are alternated between the objective lens 521e and the objective lens 522e whenever the forward movement and the reverse movement are switched. These are the adjustment of the arrangement positions of the objective lens systems 521 and 522 by the action of the objective lens elevating mechanism 53, and the setting of the irradiation conditions corresponding to the action of the respective laser lights LB by the irradiation control unit 23. It is realized in synchronization with the movement of the stage 7. More specifically, at this time, when the objective lens elevating mechanism 53 moves in the forward direction and the reverse direction, the focal position of the laser beam LB as the laser beam LBb for the main processing is the surface of the workpiece ( (more specifically, The arrangement of the objective lens systems 521 and 522 is adjusted so that the focal position of the laser light LB of the pre-processing laser light LBa is positioned above the workpiece 1A so that the surface of the base substrate 101 is aligned. When a plurality of processing lines are arranged in parallel with each other, it is only necessary to repeat the processing of the forward movement and the reverse movement. By performing the combined processing by the two-way scanning in this manner, in the case of performing the processing of the second aspect, the processing time can be shortened as compared with the case where the combined processing is performed by the one-way scanning as in the third embodiment. (Third aspect) The third embodiment realizes bidirectional scanning by a configuration different from that of the second aspect. Specifically, it is the same as the first embodiment in that the first laser light LB 1 by the second optical path OP 1 is used as the pre-processing laser light LBa, and the second laser light by the second optical path OP2 is used. LB2f is a combined processing laser light LBb' for combined processing. 157901.doc -47- 201219142 On the other hand, as shown in Fig. 16, in the laser processing apparatus for the third aspect, the first optical path OP1 is branched by the half mirror 54 and the forward direction is ^α and reversed. 1 light path ΟΡίβ these two light paths, and eight are set in the record & ^., first Ming, 521β). Further, in the optical system 5, the selection mechanism 55 is used. The optical path selecting means 55 operates based on the control of the irradiation control unit 23, and selects the forward first optical path 〇Ρ1α as the ith laser light LB1 when the stage 7 performs the forward movement as indicated by the arrow. In the optical path, when the stage 7 is moved in the reverse direction, the second optical path OP1P is selected as the optical path of the first laser light (8). Further, the optical path selecting means 55 is realized by a well-known switching gate or the like. In other words, in the third embodiment, the source of the laser light for the main processing laser is always provided on the second optical path (10), and the source of the pre-processing laser light LBa is the target stage 7 The direction of movement varies. When the stage 7 moves in the forward direction, the objective lens 521ea provided on the forward optical path 〇Ρ1α becomes the emission source Ea of the pre-processing laser light, and when the stage 7 is moved in the reverse direction, it is set in Reversely using the objective lens 521ep on the optical path ΟΡΙβ becomes the exit source of the pre-processing laser light LBa
Ea。即，於第3形態中，以與載物台7之移動同步之形態， 來切換預加工用雷射光LBa之出射源Ea。 又，第3形態亦與第i形態同樣地，至少第2雷射光源化2 係使用psec雷射光源，以便能夠於正式加工恰當地進行上 述劈開/裂開加工。具體要件係與第丨形態相同^另一方 面，第1雷射光源SL1亦與第1形態同樣地，既可使用與第2 雷射光源SL2相同之光源’亦可使用如上之U V雷射、半導 157901.doc -48- 201219142 體雷射、c〇2雷射等先前眾所周知之發出雷射光之光源。 無論哪種情形時，均係自第1雷射光源SL1以能夠良好形成 第1槽部102g及l〇3g之照射條件出射第i雷射光LB1。 再者，於圖16中，係將物鏡521α、521|3配置於高於物鏡 522e之位置上，該例示與圖9(a)、圖1〇(勾所示相同，使用 具有PSec級脈寬之第i雷射光LB1作為預加工用雷射光LBa 時，使其焦點位置位於被加工物10之表面之上方。 藉由具有如上所述之構成，第3形態亦與第2形態同樣地 實現雙向掃描之組合加工。因此，當設定彼此平行之複數 個加工預定線時，只要重複進行順向移動之加工與逆向移 動之加工便可。 於上述第2形態之情形時，每當一個加工預定線之加工 結束之後，需要使物鏡系統521 ' 522交替移動，再者，尤 其係關於正式加工用雷射光LBb ’必須高精度地調整其焦 點位置。相對於此，於第3形態之情形時，光學系統5之構 成雖然變得複雜，但只要利用光路選擇機構55切換光路便 可實現雙向掃描，因此能夠確保焦點位置精度， 第2形態更有利。 ^ <面向兩階段加工之光學系統構成與雷射加工裝置之動 作形態> 其次，對雷射加工裝置50為了對附有異質材料之基板即 被加工物10實現兩階段加工而具備之具體構成（主要係包 含雷射光源SL之光學系統5之構成）、與基於該構成之雷射 加工裝置50之動作形態進行說明。用以實現兩階段加工之 157901.doc -49· 201219142 光學系統5之具體構成主要有兩種，分別於用以實現兩階 I又加工之動作形態方面不同。以下，依序說明各形態之詳 細内容。 (第1形態） 圖17係表示兩階段加工之第丨形態之狀況之圖。再者， 於圖17中’圖式左纟丨向係對一個加工預$線進行加工時 之載物台7之移動方向。 第1形態之雷射加工裝置5〇使用發出脈寬為psec級之雷 射光之光源（亦稱為psee雷射光源）作為雷射光源SL。更具 體而σ使用發出波長為500 nm〜1600 nm、且脈寬為1 psec〜50 pSec左右之雷射光之光源。又，第2雷射光lb2之 重複頻率R較佳為10 kHz〜2〇〇 kHz左右，雷射光之照射能 量（脈衝能量）較佳為0J μ;〜5〇卩左右。 又，第1形態之雷射加工裝置5〇之光學系統5於自雷射光 源SL直至載物台7之光路〇ρ之途中具備擴束器51、及物鏡 系統52。又，第1形態之雷射加工裝置50具備物鏡升降機 構53，該物鏡升降機構53藉由基於驅動控制部以之控制而 動作之未圖示之驅動機構，使物鏡系統52自由地升降。 進而，為了轉換雷射光LB之光路朝向，光學系統5中亦 可於適當位置上設置適當個數之反射鏡5a。圖17中例示有 設置兩個反射鏡53之情形。 再者，包括下述第2形態在内，本實施形態之雷射加工 裝置50中’自雷射光源儿出射之雷射光LB之偏光狀態既 可為圓偏光亦可為直線偏光。其中，於直線偏光之情形 157901.doc -50- 201219142 時’自結晶性被加工材料中之加工剖面之彎曲與能量吸收 率之觀點出發，較佳為偏光方向與掃描方向大體平行，例 如兩者所成角處於±1。以内。 又’當出射光係直線偏光之情形時，光學系統5較佳具 備衰減115b。衰減||5b係配置於雷射光⑺之光路上之適當 位置上，擔當調整出射雷射光!；^之強度之作用。 又，於第1形態巾，光路OP上具備之物鏡系統52中配置 於最接近載物台7之位置上之物鏡52e係配置於載物台7之 圖式水平方向上移動範圍之上方位置。藉此，物鏡A變 成雷射光LB之直接出射源。 對一個加工預定線進行兩階段加工時，首先，將被加工 物10以其加工預定線與載物台7之移動方向吻合之形態載 置於載物台7上。自該狀態開始，—邊使載置有被加工物 10之載物台7向一個方向移動（將其稱為順向移動），—邊自 雷射光源SL以預加工用雷射光LBa之照射條件對一個加工 預定線照射雷射光LB，藉此進行預加工，使基底基板ι〇ι 露出。之後，一邊使載物台7向相反方向移動（將其稱為逆 向移動）’一邊對沿著該加工預定線之基底基板1〇1之露出 部位，自雷射光源SL以正式加工用雷射光LBb之照射條件 照射雷射光LB，藉此進行正式加工。即，於第丨形態中， 照射至被加工物10之預加工用雷射光LBa與正式加工用雷 射光LBb係以與載物台7之移動同步之形態，自一個雷射光 源SL交替地出射。 更詳細而言’利用物鏡升降機構53之作用進行之物鏡系 157901.doc -51- 201219142 統以配置位置之調整亦與載物台7之移動同步而進行。 於進仃預加工時，作為預加工用雷射光咖之雷射光u之 焦點係規定於被加工物10之上方之位置上。另一方面進 灯正式加工時’係以作為正式加工用雷射光遍之雷射光 之焦點與被加马1()之表面（更詳細而言係基底基板ι〇ι之 上表面）吻合之方式’利用物鏡升降機構53之作用而調整 物鏡系統52之配置位置。 當對彼此平行之複數個加工預定線進行兩階段加工時， 只要於-個加工預定線之加工結束之後，對下一加工預定 線重複上述次序便可。 再者，藉由逆向移動進行正式加卫並非必需之形態，亦 可使預加工及正式加工均僅藉由順向移動來進行。 (第2形態） 第2形態係藉由與第i形態不同之構成而實現兩階段加 工。圖18係表示兩階段加工之第2形態之狀況之圖。 圖U所示之第2形態之雷射加工裝置5〇包括兩個雷射光 源SL(第1田射光源SL J、第2雷射光源SL2)與兩個擴束器 51(511、512)，另一方面僅具備一個物鏡系統兄^以第！雷 射光源SL1為出發點之第1光路OP1 '與以第2雷射光源SL2 為出發點之第2光路〇P2係利用光路切換機構56進行切換， 且僅其中任一光路與至物鏡系統52進而直至載物台7之光 路OP形成一個光路。光路切換機構56係藉由眾所周知之切 換反射鏡機構等來實現，並基於照射控制部23之控制而進 行動作。再者，第2形態中之物鏡系統52及載物台7之配置 157901.doc •52· 201219142 闕係係與第1形態共通。 以第2形感進行兩階段加工時，相對於第！雷射光源 n又疋預加工用雷射光LBa之照射條件，相對於第2雷射光源 SL2而設定正式加工用雷射光LBb之照射條件。並且，當 載物台7順向㈣時使通過第J光路〇ρι之第i雷射光⑶通 過光路〇p，當载物台7逆向移動時使通過第2光路之第 2雷射光LB2通過光路〇p，以此方式使光路切換機構兄進 行動作gp ’利肖力路切換機構56切換光路係與載物台7 之移動同步進行。 如此，於順向移動時作為預加工用雷射光LBa之第i雷射 光Lm係照射至被加工物1〇之加工預定線之位置上因此 月b實現使基底基板101於加工預定線之位置處露出之預加 工。當繼而進行逆向移動時，作為正式加工用雷射光遍 之第2雷射光LB2係照射於藉由預加工而形成之基底基板 101之露出部位，因此能實現於該部位產生劈開/裂開之正 式加工。即，能實現雙向掃描之兩階段加工。 菖對彼此平行之複數個加工預定線進行兩階段加工時， 只要於一個加工預定線之加工結束之後，對下—加工預定 線重複上述次序便可。 <各加工圖案之處理推進方法> 以上雖對伴隨加工手法及光學系統構成之不同而帶來之 動作形態之不同進行了說明’但實際上於對附有異質材料 之基板即被加工物10進行組合加工或兩階段 呀，有必 要根據正式加工中之劈開/裂開加工所採用之加工圖案（上 157901.doc -53 201219142 述第1至第3加工圖牵$ 固累之住一個），而適當 線之設定或對準等。„戈去 進仃加工預定 次者，有必要根據正式加工之国 案而調整預加工之條株 之加工圖 f先町，對㈣進行說明。 首先於以第 線設定為與基底基板1〇1之容易 將加工預疋 後，以該容易劈開/裂門方^㈣ 裂開方向平行。然 勿货開，製開方向與载物台7之移動 方式將被加工物10對準之後 致之 後對各加工預定線進行組入加 工或兩階段加工便可。 σ 於以第2加工圖案進轩Tndt …… 時’將加工預定線設定 為”基底基板101之容易劈開/裂開方向垂直。然後，以該 容易劈開/裂開方向與載物台7之移動方向正交 被 加工物1〇對準之後，對各加工預定線進行組合加工或兩階 段加工便可。 於以第3加工圖案進行正式加工時，亦可沿著如圖8所示 之與加n線L平行之直線La、Lp或者亦沿著加工預定 線L自身貫體地或虛擬地掃描複數個雷射光lb (正式加工 用雷射光LBb)。再者，所謂虛擬地掃描複數個雷射光，係 指雖然實際上以一個光路照射雷射光，但藉由使其光路時 間性地變化，而實現與以複數個光路照射雷射光之情形相 同之掃描形態。此時，於預加工中，有必要於包含直線 La、ίβ之位置在内之更廣區域使基底基板ι〇1露出。 或者，於兩階段加工時，亦可加工預定線位於相對於基 底基板101之兩個劈開/裂開方向為等價之位置之方式，將 被加工物10對準之後，於預加工中如上所述形成寬度大之 157901.doc •54· 201219142 露出部分，於正式加工中’為了於各劈開/裂開方向上交 替地進行正式加工用雷射光LBbH錢載物台 動方向以特定週期交替不同。 【圖式簡單說明】 圖1⑷〜⑷係模式性表示第1加工圖案之加工形態之圖。 圖2係藉由第!加工圖案之劈開/裂開加工而形成有分割 起點之被加工物之表面之光學顯微鏡圖像。 广係將利用第1加工圖案之加工而形成有分割起點之藍 寶石C面基板沿著該分割起點分割後之表面（直 之SEM圖像。 4田 圖4(a)〜⑷係模式性表示第2加工圖案之加工形態之 圖5係藉由第2加工圖案之劈開/裂開加工而形成有分割 起點之被加工物之表面之光學顯微鏡圖像。 圖6係將利用第2加工圖案之加工形成有分割起點之藍寶 石C面基板沿著該分割起點分割後之表面（c面）直 SEM圖像。 圖7(a)、（b)係模式性表示第3加工圖案之加工形態之 圖。 圖8係表不第3加工圖案之加工預定線與被照射區域之形 成預定位置之關係之圖。 圖9〇)⑷係模式性表示當被加工物1〇係於基底基板⑻ 上形成有金屬薄膜層1〇2之附有異質材料之基板時之加工 狀況之側剖面圖。 圖10⑷〜(d)係模式性表示當被加工物1〇係於基底基板 157901.doc •55- 201219142 101上形成有半導體層103之附有異質材料之基板時之加工 狀況之側剖面圖。 圖11(a)〜(d)係模式性表示伴隨加工進展之預加工用雷射 光LBa與正式加工用雷射光LBb之照射狀況之變化之側視 圖。 圖12係概括地表示本實施形態之雷射加工裝置5〇之構成 之模式圖。 圖13係表示組合加工之第1形態之狀況之圖。 圖14係表示組合加工之第2形態之狀況之圖。 圖15係表示組合加工之第2形態之狀況之圖。 圖16係表示組合加工之第3形態之狀況之圖。 圖17係表示兩階段加工之第1形態之狀況之圖。 圖18係表示兩階段加工之第2形態之狀況之圖。 【主要元件符號說明】 1 控制器 2 控制部 3 記憶部 4 固定片 5 光學系統 7 載物台 7m 移動機構 10 被加工物 10a (被加工物之）載置面 50 雷射加工裝置 157901.doc •56- 201219142Ea. In other words, in the third embodiment, the source Ea of the pre-processing laser light LBa is switched in synchronization with the movement of the stage 7. Further, in the third embodiment, as in the case of the i-th aspect, at least the second laser light source is used, and the psec laser light source is used so that the above-described cleaving/cracking processing can be appropriately performed in the formal processing. The specific requirement is the same as the first embodiment. On the other hand, the first laser light source SL1 can also use the same light source as the second laser light source SL2 as in the first embodiment. Semi-guided 157901.doc -48- 201219142 Body laser, c〇2 laser, etc., previously known as the source of laser light. In either case, the i-th laser light LB1 is emitted from the first laser light source SL1 under the irradiation conditions in which the first groove portions 102g and 103g can be formed well. Further, in Fig. 16, the objective lenses 521α, 521|3 are disposed at positions higher than the objective lens 522e, and the illustration is the same as that shown in Fig. 9(a) and Fig. 1 (the same as the hook, the PSec-class pulse width is used. When the i-th laser light LB1 is used as the pre-processing laser light LBa, the focus position is located above the surface of the workpiece 10. With the above configuration, the third embodiment also realizes bidirectional as in the second embodiment. Therefore, when a plurality of processing lines are arranged in parallel with each other, it is only necessary to repeat the processing of the forward movement and the reverse movement. In the case of the second aspect, each processing line is planned. After the processing is completed, it is necessary to alternately move the objective lens system 521 ' 522. Further, in particular, it is necessary to adjust the focus position of the laser beam LBb ' for the main processing. The optical position of the third processing is relatively high. Although the configuration of the system 5 is complicated, the bidirectional scanning can be realized by switching the optical path by the optical path selecting means 55. Therefore, the focus position accuracy can be ensured, and the second form is more advantageous. The optical system configuration of the processing and the operation mode of the laser processing apparatus> Next, the laser processing apparatus 50 has a specific configuration for realizing the two-stage processing of the workpiece 10 which is a substrate with a foreign material (mainly including a mine) The configuration of the optical system 5 of the light source SL and the operation mode of the laser processing apparatus 50 according to the configuration will be described. The two-stage processing is used to realize the two-stage processing. The specific configuration of the optical system 5 is mainly two. In the following, the details of each mode are described in the following. (First embodiment) FIG. 17 is a view showing the state of the second embodiment of the two-stage process. Further, in Fig. 17, the left direction of the drawing is the moving direction of the stage 7 when processing one processing pre-$ line. The laser processing apparatus 5 of the first embodiment uses the pulse width of psec level. The laser light source (also known as the psee laser source) is used as the laser source SL. More specifically, σ uses a light source that emits laser light having a wavelength of 500 nm to 1600 nm and a pulse width of about 1 psec to 50 pSec. Further, the repetition frequency R of the second laser light lb2 is preferably about 10 kHz to 2 kHz, and the irradiation energy (pulse energy) of the laser light is preferably 0 J μ; about 5 〇卩. Further, the first form The optical system 5 of the laser processing apparatus 5 includes a beam expander 51 and an objective lens system 52 from the laser light source SL to the optical path 〇ρ of the stage 7. Further, the laser processing apparatus 50 of the first aspect The objective lens lifting and lowering mechanism 53 is configured to open and lower the objective lens system 52 by a driving mechanism (not shown) that is operated by the drive control unit to control the optical path direction of the laser light LB. An appropriate number of mirrors 5a can also be provided in the system 5 at appropriate locations. The case where two mirrors 53 are provided is exemplified in Fig. 17. Further, in the laser processing apparatus 50 of the present embodiment, the polarization state of the laser beam LB emitted from the laser light source may be either circularly polarized or linearly polarized. Wherein, in the case of linear polarization, 157901.doc -50-201219142, from the viewpoint of bending and energy absorption rate of the processed profile in the self-crystallized material, it is preferred that the polarization direction is substantially parallel to the scanning direction, for example, The angle formed is ±1. Within. Further, when the outgoing light is linearly polarized, the optical system 5 preferably has an attenuation 115b. The attenuation||5b is placed at an appropriate position on the optical path of the laser light (7), and serves to adjust the intensity of the outgoing laser light! Further, in the first embodiment, the objective lens 52e disposed at the position closest to the stage 7 of the objective lens system 52 provided on the optical path OP is disposed above the movement range of the stage 7 in the horizontal direction. Thereby, the objective lens A becomes a direct exit source of the laser light LB. When two-stage machining is performed on one planned line, first, the workpiece 10 is placed on the stage 7 in such a manner that the planned line is aligned with the moving direction of the stage 7. Starting from this state, the stage 7 on which the workpiece 10 is placed is moved in one direction (referred to as a forward movement), and the laser light SL is pre-processed by the laser light LBa. The condition irradiates the laser beam LB to a predetermined processing line, thereby performing pre-processing to expose the base substrate ι 〇. Thereafter, while the stage 7 is moved in the opposite direction (referred to as reverse movement), the laser beam for the final processing is applied from the laser light source SL to the exposed portion of the base substrate 1〇1 along the planned line. The laser light LB is irradiated under the irradiation conditions of LBb, thereby performing the formal processing. In other words, in the second embodiment, the pre-processing laser light LBa and the main processing laser light LBb irradiated to the workpiece 10 are alternately emitted from one laser light source SL in synchronization with the movement of the stage 7. . More specifically, the objective lens system 157901.doc-51-201219142, which is operated by the action of the objective lens elevating mechanism 53, is also adjusted in synchronization with the movement of the stage 7. At the time of pre-processing, the focus of the laser light u as the pre-processing laser light is set at a position above the workpiece 10. On the other hand, when the lamp is officially processed, it is the same as the surface of the gamma 1 () (in more detail, the upper surface of the base substrate ι〇ι) as the focus of the laser light for the formal processing. The position of the objective lens system 52 is adjusted by the action of the objective lens lifting mechanism 53. When the two-stage processing is performed on a plurality of processing lines parallel to each other, the above-described order may be repeated for the next processing line after the processing of the one processing line is completed. Furthermore, it is not necessary to formally defend by reverse movement, and pre-machining and formal processing can be performed only by forward movement. (Second aspect) The second mode realizes two-stage processing by a configuration different from the i-th aspect. Fig. 18 is a view showing the state of the second aspect of the two-stage processing. The laser processing apparatus 5 of the second aspect shown in Fig. U includes two laser light sources SL (first field light source SL J, second laser light source SL2) and two beam expanders 51 (511, 512). On the other hand, only one objective system brother ^ to the first! The first optical path OP1' at which the laser light source SL1 is the starting point and the second optical path 2P2 starting from the second laser light source SL2 are switched by the optical path switching mechanism 56, and only one of the optical paths and the objective lens system 52 is further up to The optical path OP of the stage 7 forms an optical path. The optical path switching mechanism 56 is realized by a well-known switching mirror mechanism or the like, and is operated based on the control of the irradiation control unit 23. Further, the arrangement of the objective lens system 52 and the stage 7 in the second embodiment is 157901.doc • 52· 201219142 The 阙 system is common to the first embodiment. When performing two-stage processing with the second shape, it is relative to the first! The laser light source n is further irradiated with the laser light LBa for pre-processing, and the irradiation conditions of the laser beam LBb for the main processing are set with respect to the second laser light source SL2. Further, when the stage 7 is turned (4), the i-th laser light (3) passing through the J-th optical path 通过ρ1 passes through the optical path 〇p, and when the stage 7 moves in the reverse direction, the second laser light LB2 passing through the second optical path passes through the optical path. In this manner, the optical path switching mechanism is operated in the same manner as the optical path switching mechanism 56 switches the optical path system in synchronization with the movement of the stage 7. In this way, the i-th laser light Lm, which is the pre-processing laser light LBa, is irradiated to the position of the processing target line of the workpiece 1〇 during the forward movement, so that the month b is at the position where the base substrate 101 is at the processing planned line. Pre-processed. When the reverse movement is performed in the reverse direction, the second laser light LB2 is irradiated onto the exposed portion of the base substrate 101 formed by the pre-processing as the laser light for the final processing, so that the opening/destructing of the portion can be realized. machining. That is, two-stage processing of two-way scanning can be realized.进行 When two-stage processing is performed on a plurality of processing lines parallel to each other, the above-described order may be repeated for the lower-process predetermined line after the processing of one processing line is completed. <Processing and Advancing Method of Each Processing Pattern> The difference in the operation form due to the difference in the configuration of the processing method and the optical system has been described above. However, the workpiece is actually a substrate to which a foreign material is attached. 10 For combined processing or two-stage processing, it is necessary to use the processing pattern used for the opening/split processing in the formal processing (on page 157901.doc -53 201219142, the first to third processing drawings are used to live in one) , and the appropriate line setting or alignment. „Go to the processing of the pre-processing, it is necessary to adjust the processing map of the pre-processed strip according to the official processing of the country, f first town, explain (4). First set the line with the base substrate 1〇1 It is easy to pre-process the processing, and the direction of the cracking is easy to open/split the door. (4) The cracking direction is parallel. However, the opening direction and the moving direction of the stage 7 are aligned with the workpiece 10, and then Each of the processing lines may be subjected to the grouping processing or the two-stage processing. σ When the second processing pattern enters the ridge Tndt ......, the processing line is set to "the easy opening/destructing direction of the base substrate 101 is perpendicular." Then, the workpiece 1〇 is aligned orthogonally to the moving direction of the stage 7 in the easy split/crack direction, and then the combined processing lines or the two-stage processing may be performed. When the main processing is performed in the third processing pattern, the plurality of lines La, Lp parallel to the n-line L as shown in FIG. 8 or the plurality of lines along the planned line L may be scanned or virtually scanned. Laser light lb (formal processing laser light LBb). Further, the virtual scanning of a plurality of types of laser light means that the laser light is irradiated with one optical path, but the optical path is temporally changed to realize the same scanning as the case where the plurality of optical paths are irradiated with the laser light. form. At this time, in the pre-processing, it is necessary to expose the base substrate ι 1 in a wider area including the positions of the straight lines La and ίβ. Alternatively, in the two-stage processing, the predetermined line may be placed at an equivalent position relative to the two split/split directions of the base substrate 101, and after the workpiece 10 is aligned, the pre-processing is as described above. 157901.doc •54· 201219142 The exposed portion is formed. In the formal processing, the direction of the LBbH money carrier is alternately changed in a specific cycle in order to alternately perform the processing in the split/split direction. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 (4) to (4) schematically show a processing form of a first processing pattern. Fig. 2 is an optical microscope image of the surface of the workpiece having the split starting point formed by the splitting/cracking process of the ?! In the processing of the first processing pattern, the surface of the sapphire C-plane substrate having the starting point of the division is formed along the dividing starting point (the straight SEM image. 4, Fig. 4 (a) to (4) are schematic representations of the second Fig. 5 is a view showing an optical microscope image of a surface of a workpiece having a division starting point by a splitting/cracking process of the second processing pattern. Fig. 6 is a process of forming a second processing pattern. The sapphire C-plane substrate having the division starting point is a straight SEM image of the surface (c surface) divided along the division starting point. Fig. 7 (a) and (b) schematically show the processing pattern of the third processing pattern. Fig. 9A) (4) schematically shows that a metal film is formed on the base substrate (8) when the workpiece 1 is attached to the base substrate (8). A side cross-sectional view of the processing state of the substrate 1 with a substrate of a heterogeneous material. Figs. 10(4) to (d) are schematic side sectional views showing the processing state when the workpiece 1 is attached to the base substrate 157901.doc 55-201219142 101 on which the substrate of the semiconductor layer 103 with the heterogeneous material is formed. Figs. 11(a) to 11(d) are schematic side views showing changes in the irradiation state of the pre-processing laser light LBa and the main processing laser light LBb accompanying the progress of processing. Fig. 12 is a schematic view showing the configuration of the laser processing apparatus 5 of the present embodiment. Fig. 13 is a view showing a state of the first aspect of the combined processing. Fig. 14 is a view showing a state of the second aspect of the combined processing. Fig. 15 is a view showing a state of the second aspect of the combined processing. Fig. 16 is a view showing the state of the third aspect of the combined processing. Fig. 17 is a view showing the state of the first aspect of the two-stage processing. Fig. 18 is a view showing the state of the second aspect of the two-stage processing. [Description of main components] 1 Controller 2 Control unit 3 Memory unit 4 Fixing plate 5 Optical system 7 Stage 7m Moving mechanism 10 Workpiece 10a (to be processed) Mounting surface 50 Laser processing device 157901.doc •56- 201219142
50A 51 52 53 54 55 56 101 l〇lg 101s 1 01 w 102 102a l〇2g 103 Cl 〜C3 Cllb、 Ea Eb L LB LBa LBb OP 雷射光照射部 擴束器 物鏡系統 物鏡升降機構 半反射鏡 光路選擇機構 光路切換機構 基底基板 第2槽部 上表面 劈開·裂開面 金屬薄膜層 表面 第1槽部 半導體層 ' Clla ' 劈開/裂開面 C21〜C24 (預加工用雷射光之）出射源 (正式加工用雷射光之）出射源 加工預定線 雷射光 預加工用雷射光 正式加工用雷射光 光路 157901.doc -57- 201219142 被照射區域 RE、RE1〜RE4、 RE11-RE15 、 雷射光源50A 51 52 53 54 55 56 101 l〇lg 101s 1 01 w 102 102a l〇2g 103 Cl ~C3 Cllb, Ea Eb L LB LBa LBb OP Laser beam illumination beam expander objective lens system objective lens lifting mechanism half mirror optical path selection Mechanism optical path switching mechanism Base substrate Second groove upper surface splitting/cleaving surface Metal film layer surface First groove portion Semiconductor layer 'Clla ' Split/cleavage surface C21 to C24 (Preprocessed laser light) Source (official) Laser beam for processing) Projection line for processing laser light for laser processing for laser beam processing Laser light for laser beam processing 157901.doc -57- 201219142 Irradiated area RE, RE1 to RE4, RE11-RE15, laser source
RE21〜RE25 SL 157901.doc -58-RE21~RE25 SL 157901.doc -58-