201217061 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種f # _s # $嘴碩，用於使一基板表面歷經至 少一第一先質及一第-土挤 示一先質之連串表面反應，且明確地係 一種依據申請專利範圖笛， 圍第1項前言之噴嘴頭。本發明又關 於一種依據申請專利範圍第2〇項前言之裝置。 【先前技術】 在先則技藝中，數種型式之裝置、喷嘴頭、及喷嘴係 依據原子層沉積方法（ALD)之原理，用於使—基板表面歷經 至J 一第一先質及一第二先質之連串表面反應。在ALD之 應用中，典型地係於各個不同階段中，將二氣態先質導入 ALD反應ϋ中。該等先質係與該基板表面有效地反應，以 達成一成長層沉積。該等先質階段典型地係由一鈍氣沖洗 階段接續、或分隔，該鈍氣沖洗階段可在分離導入其他先 質之前’自該基板表面消除多餘之先質。因此，一 ALD製 程需使流至該基板表面之先質依序交替。這種由交替表面 反應、及其間之沖洗階段組成的重複序列，係一典型之ALD 沉積循環。 用於連續操作ALD之先前技藝裝置，通常包括一喷嘴 頭，其具有一個或更多第一先質噴嘴，用於使該基板表面 歷經該第一先質，一個或更多第二先質喷嘴，用於使該基 板表面歷經該第二先質，一個或更多沖洗氣體通道，及一 個或更多排放通道’用於排放該二先質及沖洗氣體，其配 4 201217061 置順序如下：至少一第一先質喷嘴、一第一排放通道、一 沖洗氣體通道、一排放通道、一第二先質喷嘴、一排放通 道、一沖洗氣體通道、及一排放通道，可選擇性地重複複 數次。此先前技藝喷嘴頭之問題在於，其包括數個不同喷 嘴及通道’如此將使該喷嘴頭複雜化’且相當地大。該喷 嘴較佳地可相關於該基板而運動’以生成多個成長層。 另一型式連續ALD用先前技藝喷嘴頭之交替地連串包 括.一第—先質喷嘴、一沖洗氣體通道、一第二先質噴嘴、 及一沖洗氣體通道’可選擇性地重複複數次。在此先前技 藝喷嘴頭中，每一該等先質喷嘴及沖洗氣體通道各設有一 入口及一出口，使該先質及該沖洗氣體皆使用同一喷嘴供 應與排放。因此，並無分離之排放通道。此先前技藝喷嘴 頭之問題在於，沖洗氣體將洩漏至該先質喷嘴，使該先質 濃度將稀釋。是以，該喷嘴頭無法在該先質噴嘴全身長上、 或在該喷嘴頭整個輸出面上’提供一均勻氣體供應。更， 結構將因每一該等噴嘴皆具有入口及出口，而顯複雜。亦， 此喷嘴頭可相對於該基板運動，以生成多個成長層。 【發明内容】 疋以本發明之目的係提供一種噴嘴頭及裝置， 決上述先前技藝問題。可拉 了藉由依據申請專利範圍第1 徵部之一喷嘴頭，遠忐士政。。 ^ 建成本發明之目的，其特徵在於： 供應通道、該等沖洗氣俨 Μ寻 虱體通道、及該等排放通道係沿 且相繼配置之順序如π · ^ π 下·一沖洗氣體通道、一第一供應通 201217061 道、-排放通道、一沖洗氣體通道、一第二供應通道、及 -排放通道’可選擇性地重複複數次。可藉_種依據 專利範圍第1項特徵部之裝置來達成本發明之目的。 申請專利範u依附項將描述本發a月之較佳具體實施 例。 本發明之基本構想為，該噴嘴頭包括六個氣體元件， 使二先質喷嘴之間恆彳# —沖洗氣體通道及某一真空排放 件。該等先質噴嘴、該等沖洗氣體通道、及該等真空排放 喷嘴’可皆為該喷嘴頭中之分離元件。另一選擇為，該喷 嘴頭可設有複數個先質噴嘴’包括二鄰接之平行延伸通 道，其在該喷嘴頭之出口面上具有一開放部。該先質喷嘴 包括一細長型供應通道，配置成沿該供應通道之全身長供 應先質-細&型排放通冑’與該供應通道鄰接且平行 地延伸，且配置成沿該排放通道之全身長排放先質。因此， 在本發明巾，該先質係在該喷嘴中’自該供應通道流動至 該排放通道。在本發明之某—較佳具體實施例中，該先質 噴嘴尚設有-反itm ’配置於該供應通道與該排放通道 之間。該反應空間係開向該噴嘴頭輸出面，以使該基板表 面歷經先質，且配置成大致沿該供應通道及該排放通道之 全身長延伸。在本發明之某一具體實施例中，料沖洗氣 體通道係配置成’肖I繞該纟嘴頭^體環境作流體連 接。更’該等排放通道係配置成，自該輸出面排出先質與 沖洗氣體二者。 本發明因可在該先質噴嘴之全身長上提供一均勾先質 201217061 供應、及亦均勻之先質與沖洗氣體排放件，而具有優勢。 本發明尚允許大致正對於該基板表面垂直地供應該先質。 如此將因該垂直氣體流動有助於破壞該基板表面上之氣體 層以提升該等先質之表面反應，而具有優勢。更，本發明 提供-種喷嘴頭，其具有二真空排放件，少於先前技藝解 決方案者。更，由於該沖洗氣體通道係與圍繞該喷嘴頭之 氣體裒i兄作被動式流體連接，目此該沖洗氣體無需特別地 供應至該輸出面。 【實施方式】 第1圖係顯示一裝置之一具體實施例剖視圖，其用於 依yLD之原s，使—基板6之一表面4歷經至少一第一 貝A及第一先質B之連串表面反應。第一與第二先質 A與B可A ald中所使用之任何氣態先質，譬如臭氧、三 甲基銘（TMA)、水、四氣化敍 乳化鈦（TiCh)、二乙基鋅（DEZ)，或 者先質亦可為電漿，譬如氨氣 — 氰轧虱、軋軋、氮氣、氫氣、 或一氧化碳電漿。該裴置包 舻處理至26,其内具有一氣 體王衣土兄14。氣體環境14可自 匕括s如虱專鈍氣、或乾空氣、 或適合用作為ALD方法中 τ /先二軋之任何其他氣體。亦， 電漿可用於沖洗，苴链 先/、s如為氮或氬電漿。本文中之沖洗氣 體亦包括電漿。沖洗，、s 、 . 係連接至處理室36,以將沖洗 氣體供應至處理室26中。—_ 噴嘴頭2係配置於處理室26 内。該喷嘴頭包括一輪出 面5、用於使基板6之表面4歷 、·二第一先裊A之一個或更多第_ 乐先質噴嘴8、用於使基板6 201217061 之表面4歷經第二先質8之_個或更多第二先質喷嘴ι〇。 該裝置尚包括-供應構件，用於將第-及第二先質A、B供 應至喷嘴頭2,以及一排放構件，用於將第一及第二先質 自嘴嘴頭2排放。>第1A圖中所顯示者，該等第一 及第二噴嘴係交替地相繼配置，以當基板6與喷嘴頭2互 相相對運動時，使基板6之表面4歷經第一先質A與第二 先之交替表面反應。可設置該裝置，使喷嘴頭2可譬 / 1後運動基板2靜止不動。另_選擇為，喷嘴頭2 系呈靜I，且基板6運動，亦或基板6與喷嘴頭2二者皆 可運動。基板6可為裝載於該處理室中之一分離基板且 藉批次製程處理，或著另一選擇地將基板配置成，輸送通 i处理至26。亦可將該裝置構成為，用於捲繞式製程，使 一撓性基板自某-滾子經由處理室26輸送至另—滾子、或 自任何來源經由處理室26而至任何貯器，且藉處理室Μ 内之喷嘴頭2處理。 先質喷嘴8、1 〇較佳地係呈細長型。第一先質喷嘴8 設有-第-通道3,其沿第一先質喷嘴8之縱向方向延伸 且包括一第一開放部9,該第一開放部係沿第-通道3延 伸且開向喷嘴頭2之輸出面5。第二先質喷嘴1〇設有一第 二通道7’其沿第二先f噴嘴1G之縱向方向延伸且包括一 第二開放部U，該第二開放部係沿第二通道7延伸且開向 喷嘴頭2之輸出面5。如第1B圖中所顯示者，第一先質喷 嘴8包括一第一入口 18，用於將第一先質a供應至第一通 道3,及二第一出口 2〇，用於在第一先質人之表面反應後， 8 201217061 將該第二先質自第—通冑3排出。相似地，第二先質喷嘴 7〇包括一第二入口 22 ’用於將第二先質B供應至第二通道 ’及二第二出口 24 ’用於在第二先質B之表面反應後， h第一先質自第一通道7排出。在本具體實施例中，入 D 18、22係配置於楚一命银一、 、 /、第一通道3、7身長之中間處， 出口 20、24係配置於第一及第二通道3、7之對立末端， 第1B圖中所顯示者。然而，請注意到，第一及第二通道 :7中亦可有二個或更多入口 18、22，及一個或更多出口 24入口 18、22及出口 20、24亦可位於第一及第二 通道3、7中之任何其他位置。 如第1A圖及第1B圖中所顯示者’第-及第二喷嘴8、 0係藉沖洗氣體通道12而互相分離，開向處理室26中圍 繞嗔嘴頭2之氣體環境14、及喷嘴頭2之輸出面5。沖洗 氣體通道12係形成為，延伸於第—與第三先質喷嘴8、 ]的缺口缺口 12因此可對包括有沖洗氣體之氣體環境 14提供—流體連接。該等缺口係形成第—㈣二先質喷嘴 8、1 〇之間的沖洗氣體通道丨2，以使第一與第二噴嘴8、 0’及第-與第二先質A、B互相分離。在第1A圖及第W 圖中，喷嘴頭2係設置如一格柵狀構造，其中第一及第二 先質喷嘴8、10形成桿件，且沖洗氣體通道12形成該等桿 件之間的缺口。先質喷嘴8、10係藉複數個連接器33而2 相接合。然而，請注意到，沖洗氣體通道12亦可藉一個或 更多通道 '孔洞、或導管而設置’其可具有對氣體環境" 之一被動式流體連接、或至少部分地開向氣體環境14。該 201217061 等通道可相似於第—及第二通道3、7。 在-較佳具體實施例中，第—先質喷嘴8係， 可在輸出面5處於—筮 ^, 成 , 第一壓力下刼作，且第二先質噴嘴ln 係配置成’可在輪屮 ♦ 、货10 产壓力下操作。氣體環 兄高於該第一與第二壓力之—第三壓力^ 以，氣體環境14中之沖洗氣體將流動至沖洗氣體通道^ 且使第肖第—先質Α、Β保持分離。某些沖洗氣體亦將自 喷嘴頭2輸出S5與基板6表面4之間的沖洗氣體通道流 動至第-及第二通道3、7。該第―、第二、與第三壓力可 低於正常氣壓（NTP ; 1巴，〇它），或者大致相等於正常氣 壓或南於正常氣壓、或甚至為真空。該等喷嘴與氣體環境 之壓力差係關鍵要素。該第一及第二壓力係於噴嘴頭2之 輸出面5處量測’且該第一及第二通道中之壓力可不同於 該第一及第二壓力、正常地高於該第一與第二壓力。 第2圖係顯示喷嘴頭2之另一具體實施例，其中喷嘴 頭2設有一分離沖洗氣體容器39，圍繞喷嘴頭2配置。沖 洗氣體容器39内具有一氣體環境16。在第2圖中，沖洗 氣體容器39係配置至喷嘴頭2處，且該沖洗氣體容器内之 氣體環境包括沖洗氣體。在本具體實施例中，第一與第二 先質喷嘴8、10係與第1A圖與第1B圖之先質噴嘴相似， 因此無需再詳細說明。在第2圖中，第一與第二先質喷嘴 8、10之間設有一沖洗氣體通道1 2 ’用於使基板6表面4 歷經一沖洗氣體，且使第一與第二先質A、B互相分離。沖 洗氣體通道12係與第一及第二先質喷嘴8、10平行延伸之 201217061 一通道。沖洗氣體通道12係配 ^ 3q ri ^ ^ ^ 罝成，經由延伸自沖洗氣體 谷时39以至沖洗氣體 ,Q产 、Z之複數個導管35,而與沖洗 轧體谷益39之氣體環境丨 源可連接至沖洗褒辦~ 彼動式流體連接。一沖洗氣體 丧主，中洗虱體容器3 9， 體玄51 士 丄 將冲洗氣體供應至沖洗氣 體办器39中。沖洗氣體通道 接i、>、、& # 亦可藉由以被動式流體連 接至冲洗氣體容器39、且至少 5之一佃+ *夕 77地開向喷嘴頭2輸出面 b之個或更多缺口、孔洞 邊绫士 及開D而形成。輸出面5之 逯緣&以有額外沖洗氣體 者。這歧額外沖M s 12 ’如第2 巾所顯示 一領外沖洗虱體通道12係 該喷嘴頭輸出面5，*周圍…吏噴嘴頭2、且明確地為 止先質氣齅士毹 ° 〃體％境相分離，使得可為防 為體流動至周圍氣體搜 地用於〈兄’而亦將噴嘴頭2選擇性 地用於大氣壓力下。 ^ 、评I王 該輸. μ /洗氣體通道可分離地設於 忒掏出面之每一邊緣區， 繞整個輪出面5之環圈。 _成位在邊緣區上、且圍 亦’在本具體實施例中，第 可在輸“5處於—第一懕六” 置成’ 係配置成，知作，且第二先質喷嘴10 且力乂 1在輸出面Λ* 體容器39 # ; _第二壓力下操作。沖洗氣 盗39係以相同於第u 與第二壓力夕—贫_ 第二噴嘴S in 刀之一第二壓力。第一及 、嘴8 i〇亦可在結合第U圖；？ 似壓力下操作。當 ㈣圖作描述之相 該沖洗氣體…: 該第一與第二塵力時， 供應。更，嗜、、主音咕 、12 —靜態沖洗氣體 又味/主意到，第2圖之噴喈葩9女 沖洗氣體诵、蓄7 、 亦可構成為’使 无乳體通道！2與圍繞喷嘴頭 乳體％ i兄〗4作流體連 式，配置… 圖具體貫施例中之方 201217061 接。因此’導管35可連接至氣體環境14，以代替沖洗氣 體容器3 9。該等先質及沖洗氣體可經由流體連接供應至嘴 嘴頭2。另一選擇為，喷嘴頭2設有一個或更多先質 '及/ 或沖洗氣體容器、瓶件、或相似物，使得當該喷嘴頭運動 時’該荨先質及/或將與該噴嘴一同運動。這種配置可使對 一運動噴嘴頭2作困難流體連接之數量有所減少。 亦可使用任何類型之先質噴嘴及沖洗氣體通道構成第 1A圖、第ΐβ圖、及第2圖之發明。藉由二個或更多分離 孔/同開口、或者可對氣體環境14或一分離沖洗氣體容器 3 9提供一流體連接之任何類型特點，形成該等沖洗氣體通 道第1 A圖、第1B圖、及第2圖之具體實施例允許將沖 :氣體用於互相分離之先質噴嘴，而無需主動地供應沖洗 氣體，及使用相同於先質喷嘴8、10之喷嘴結構。 稱成一第2圖噴嘴頭 兀刖孜製万式係提供— 先質喷嘴，具有至少—筮 、负主^第一入口及至少一第一出口， 二先質噴嘴1有至少-第二入口及至少-第二出口 :料氣體通道，介於該等第-與第4質喷嘴之間 冲洗氣體通道具有僅一個或 一 丨口 4文夕第二入口且不具出口 三種噴嘴將重複一^ 一 饭次更夕-人，以形成一噴嘴頭。自該 二入口供應至該沖洗氣體 、夂，中洗礼體係經由該等 第-先質噴嘴之第-及第二出口排放。 第3圖係顯示另一具體實施例，其中 第1Λ圖及第1B圖喷 、 八 聞頁'^頭相同類型之構造。 噴嘴頭亦可依不同於第 第3圆中之某些其他方式構成。, 12 201217061 頭2包括一個或更多第一先質喷嘴8，帛於使該基板表面 歷濕第先質A，及二個或更多第二先質喷嘴1〇，用於使 基板6表® 4歷經第二先質B。第一先質喷嘴8包括至少 第入口 18，用於供應第一先質a，及至少一第一出口 20，用於排出第—|哲A -h ^ c 无質A。在第3圖中，第一先質喷嘴頭8 包括一第一入口 18,設於細長型第一先質喷嘴8之一末 端，及一第一排放口 20,設於第—先質喷嘴8之另一末端。 相似地’第二先質噴嘴10包括-第二入口 22,設於細長 型第一先質噴嘴10之—末端’用於供應第二先質B，及一 第二排放口 24，設於第二先質噴嘴10之另-末端，用於 排出第二先質B。人口 18、22及出口 2Q、24亦可依據譬 如第1B圖中所示之其他方式喷嘴8、U)中亦可 有二個或更多入口及出口。I，如稍後將說明者，亦可將 該喷嘴頭構成為，使先質噴嘴8、1〇不包括任何出口 2〇、 24,但該噴嘴頭設有一個或更多分離排放通道。 在第3圖中，喷嘴頭2設有複數個第一連接元件3〇, 用於將第-先質A自某__第—先質噴嘴8導引至某一或更 多其他第-先質喷嘴8。噴嘴頭2尚設有複數個第二連接 元件32,用於將第二先質B自某一第二先質噴嘴料引 至某—或更多其他第二先質喷嘴1〇β連接元件3〇、Μ較 佳地包括一輸送管、一管道、一封閉通道或一導管，以及 在二個或更多第一先質喷嘴8、或者二個或更多二先質 喷嘴10之間提供一流體連接的任何其他必要組件。如第3 圖中所顯示者，某—第—先f喷嘴8之第—出d2g係以第 13 201217061 一連接元件3〇連接至另-第-先質喷嘴8之第一入口 18, 以將第-先質A自該某_第一先質喷嘴8導引至該另一第 -先質喷嘴8。相似地’某一第二先質喷嘴i。之第二出口 24係以至少-第二先質噴嘴1〇連接至另一第二先質喷嘴 10之第二入口 22,以將第_先fB 、 析弟一先質B自該某一第二先質喷嘴 1〇導引至該另一第二先質喷嘴10。依據上述者，其構想係 串連二個或更多先質嘖喈β、ιη ^ 兀負喂嘴8、10,使先質可相繼流通過二 個或更多先質噴嘴8、1〇。 請注意到，亦可依不同於第3圖中所顯示者之某些苴 他方式來配置連接元件3G、32，其中每—連接元件Ml 係設於二個或更多先質噴嘴8或1〇之間。第一連接元件 30可配置於某一第一先質喷嘴8與二個或更多其他第一先 質喷嘴8之間，以將第—先質a自該某一第—先質喷嘴8 導引至該二個或更多其他第-先質喷f 8。亦，第二連接 元件32可配置於某一第二先質喷嘴（。與二個或更：直他 第二先質喷嘴10之間’以將第二先質B自該某一第二先質 噴嘴10導引至該二個或更多其他第二先質噴嘴1〇。201217061 VI. Description of the Invention: [Technical Field] The present invention relates to a f # _s # $ 硕 ,, which is used to make a substrate surface pass through at least a first precursor and a first-soil A series of surface reactions, and clearly a nozzle head according to the patent application Fan Tudi, around the first preface. The invention is further directed to a device according to the preamble of the second aspect of the patent application. [Prior Art] In the prior art, several types of devices, nozzle heads, and nozzles are used according to the principle of atomic layer deposition (ALD) to make the surface of the substrate go through a first precursor and a first A series of surface reactions of the two precursors. In the application of ALD, the two gaseous precursors are typically introduced into the ALD reaction crucible in various stages. The precursors are effectively reacted with the surface of the substrate to achieve a growth layer deposition. These precursor stages are typically spliced or separated by an inert gas rinsing stage that removes excess precursor from the surface of the substrate prior to separation and introduction of other precursors. Therefore, an ALD process requires the precursors flowing to the surface of the substrate to alternate in sequence. This repetitive sequence consisting of alternating surface reactions and the rinsing phase between them is a typical ALD deposition cycle. A prior art device for continuously operating ALD, generally comprising a nozzle head having one or more first precursor nozzles for passing the substrate surface through the first precursor, one or more second precursor nozzles And the substrate surface is used to pass the second precursor, one or more flushing gas passages, and one or more exhaust passages for discharging the two precursors and the flushing gas, and the arrangement thereof is as follows: at least: a first precursor nozzle, a first discharge passage, a flushing gas passage, a discharge passage, a second precursor nozzle, a discharge passage, a flushing gas passage, and a discharge passage are selectively repeated a plurality of times . A problem with this prior art nozzle tip is that it includes a number of different nozzles and channels 'which would complicate the nozzle tip' and is relatively large. The nozzle is preferably movable in relation to the substrate to create a plurality of growth layers. Another type of continuous ALD is alternately repeated with a prior art nozzle tip. A first precursor nozzle, a flush gas passage, a second precursor nozzle, and a flushing gas passage' can be selectively repeated a plurality of times. In the prior art nozzle head, each of the precursor nozzles and the flushing gas passages are provided with an inlet and an outlet, so that the precursor and the flushing gas are both supplied and discharged using the same nozzle. Therefore, there is no separate discharge channel. A problem with this prior art nozzle tip is that the flushing gas will leak to the precursor nozzle so that the precursor concentration will be diluted. Therefore, the nozzle head cannot provide a uniform gas supply on the entire length of the precursor nozzle or on the entire output surface of the nozzle tip. Moreover, the structure will be complicated by the fact that each of these nozzles has an inlet and an outlet. Also, the nozzle tip is movable relative to the substrate to create a plurality of growth layers. SUMMARY OF THE INVENTION The object of the present invention is to provide a nozzle head and apparatus that overcome the above prior art problems. Can be pulled by the nozzle head according to the first part of the patent application scope, far away from the government. . The purpose of the invention is characterized in that: the supply channel, the flushing gas channel, and the order of the discharge channels are successively arranged, such as π · ^ π, a flushing gas channel, and The first supply passage 201217061, the discharge passage, the purge gas passage, the second supply passage, and the - discharge passage may be selectively repeated a plurality of times. The object of the present invention can be attained by means of a device according to the feature of the first aspect of the patent. A preferred embodiment of the present month will be described in the application for a patent. The basic idea of the invention is that the nozzle head comprises six gas elements, such that the two precursor nozzles are constant between the flushing gas passage and a vacuum discharge. The precursor nozzles, the flushing gas passages, and the vacuum discharge nozzles can all be separate elements in the nozzle head. Alternatively, the nozzle head can be provided with a plurality of precursor nozzles ‘including two adjacent parallel extending passages having an open portion on the outlet face of the nozzle head. The precursor nozzle includes an elongated supply passage configured to extend adjacent to and parallel with the supply passage along the full length supply of the full length of the supply passage, and configured to be along the discharge passage The whole body is long-term discharge. Thus, in the towel of the present invention, the precursor is flowed from the supply passage to the discharge passage in the nozzle. In a preferred embodiment of the invention, the precursor nozzle is further provided with an anti-itm' disposed between the supply passage and the discharge passage. The reaction space is open to the nozzle head output surface such that the substrate surface passes through the precursor and is configured to extend substantially along the supply passage and the full length of the discharge passage. In a particular embodiment of the invention, the material flushing gas passage is configured to be fluidly coupled to the environment of the mouthpiece. Further, the discharge passages are configured to discharge both the precursor and the flushing gas from the output face. The present invention has an advantage in that it can provide a uniform material and a flushing gas discharge member on the whole body length of the precursor nozzle. The present invention also allows for the supply of the precursor substantially perpendicular to the surface of the substrate. This is advantageous because the vertical gas flow helps to destroy the gas layer on the surface of the substrate to enhance the surface reaction of the precursors. Furthermore, the present invention provides a nozzle head having two vacuum discharges, less than prior art solutions. Further, since the flushing gas passage is passively fluidly connected to the gas surrounding the nozzle head, the flushing gas does not need to be specially supplied to the output face. [Embodiment] FIG. 1 is a cross-sectional view showing a specific embodiment of a device for causing a surface 4 of a substrate 6 to pass through at least a first shell A and a first precursor B according to the original s of yLD. String surface reaction. The first and second precursors A and B may be any gaseous precursors used in A ald, such as ozone, trimethylamine (TMA), water, tetra-vaporized titanium (TiCh), diethyl zinc ( DEZ), or precursors may also be plasma, such as ammonia - cyanide rolling, rolling, nitrogen, hydrogen, or carbon monoxide plasma. The device is processed to 26, which has an air body Wang Xiu brother 14. The gaseous environment 14 can be self-contained, such as 虱, 钝, or dry air, or any other gas suitable for use as τ / first two in the ALD process. Also, the plasma can be used for rinsing, and the hydrazine chain is first/, s such as nitrogen or argon plasma. The flushing gas herein also includes plasma. Flushing, s, . is connected to the processing chamber 36 to supply flushing gas into the processing chamber 26. The nozzle head 2 is disposed in the processing chamber 26. The nozzle head includes a wheel-out surface 5, one or more first-stage precursors 8 for making the surface of the substrate 6 and the first ridge A of the substrate 6, for making the surface 4 of the substrate 6 201217061 pass through the second One or more second precursor nozzles ι〇. The apparatus further includes a supply member for supplying the first and second precursors A, B to the nozzle head 2, and a discharge member for discharging the first and second precursors from the mouthpiece 2. > shown in Fig. 1A, the first and second nozzles are alternately arranged one after another such that when the substrate 6 and the nozzle head 2 move relative to each other, the surface 4 of the substrate 6 passes through the first precursor A and The second alternate surface reaction. The device can be arranged such that the nozzle head 2 can move the substrate 2 after being 譬 / 1 . Alternatively, the nozzle head 2 is static I, and the substrate 6 is moved, or both the substrate 6 and the nozzle head 2 are movable. The substrate 6 can be a separate substrate loaded in the processing chamber and processed by a batch process, or alternatively configured to be transported to a process 26. The apparatus can also be configured for use in a roll-to-roll process to transport a flexible substrate from a roller to another roller via the processing chamber 26, or from any source via the processing chamber 26 to any reservoir. It is processed by the nozzle head 2 in the processing chamber. The precursor nozzles 8, 1 are preferably elongated. The first precursor nozzle 8 is provided with a first passage 3 extending in the longitudinal direction of the first precursor nozzle 8 and including a first open portion 9 extending along the first passage 3 and opening The output face 5 of the nozzle head 2. The second precursor nozzle 1 is provided with a second passage 7' extending in the longitudinal direction of the second first f nozzle 1G and including a second opening portion U extending along the second passage 7 and opening The output face 5 of the nozzle head 2. As shown in FIG. 1B, the first precursor nozzle 8 includes a first inlet 18 for supplying the first precursor a to the first passage 3 and two first outlets 2 for the first After the surface reaction of the precursor, 8 201217061, the second precursor is discharged from the first - overnight 3 . Similarly, the second precursor nozzle 7A includes a second inlet 22' for supplying the second precursor B to the second passage 'and the second outlet 24' for reacting on the surface of the second precursor B. , h first precursor is discharged from the first channel 7. In this embodiment, the D 18 and the 22 are disposed in the middle of the length of the first channel 3 and the first channel 3, and the outlets 20 and 24 are disposed in the first and second channels 3, The opposite end of 7 is shown in Figure 1B. However, please note that there may be two or more inlets 18, 22 in the first and second passages: 7, and one or more outlets 24, inlets 18, 22 and outlets 20, 24 may also be located in the first and Any other location in the second channel 3, 7. As shown in FIGS. 1A and 1B, the 'first and second nozzles 8, 0 are separated from each other by the flushing gas passage 12, open to the gas environment 14 surrounding the nozzle head 2 in the processing chamber 26, and the nozzle. The output face 5 of the head 2. The flushing gas passage 12 is formed such that the notch recess 12 extending through the first and third precursor nozzles 8, can provide a fluid connection to the gaseous environment 14 including the flushing gas. The gaps form a flushing gas passage 丨2 between the first (four) two precursor nozzles 8, 1 , to separate the first and second nozzles 8, 0' and the first and second precursors A, B from each other. . In Figs. 1A and W, the nozzle head 2 is provided in a grid-like configuration, wherein the first and second precursor nozzles 8, 10 form a rod, and the flushing gas passage 12 forms between the rods. gap. The precursor nozzles 8, 10 are joined by a plurality of connectors 33. However, it is noted that the flushing gas passage 12 may also be provided by one or more passages 'holes, or conduits' which may have a passive fluid connection to the gaseous environment, or at least partially open to the gaseous environment 14. The 201217061 and other channels can be similar to the first and second channels 3, 7. In a preferred embodiment, the first precursor nozzle 8 is operable at the output face 5 at a first pressure and the second precursor nozzle ln is configured to be in the wheel.屮♦, goods 10 Under production pressure. The gas ring brother is higher than the first and second pressures - the third pressure is such that the flushing gas in the gas environment 14 will flow to the flushing gas channel and keep the first and second precursors and the helium separated. Some of the flushing gas will also flow from the flushing gas passage between the nozzle head 2 output S5 and the surface 4 of the substrate 6 to the first and second passages 3, 7. The first, second, and third pressures may be lower than normal air pressure (NTP; 1 bar, 〇 it), or approximately equal to normal air pressure or south to normal air pressure, or even vacuum. The pressure difference between these nozzles and the gas environment is a key element. The first and second pressures are measured at the output face 5 of the nozzle head 2 and the pressures in the first and second passages may be different from the first and second pressures, normally higher than the first and second Second pressure. Fig. 2 shows another embodiment of the nozzle head 2 in which the nozzle head 2 is provided with a separate flushing gas container 39 disposed around the nozzle head 2. The purge gas container 39 has a gaseous environment 16 therein. In Fig. 2, a flushing gas container 39 is disposed at the nozzle head 2, and the gas atmosphere in the flushing gas container includes a flushing gas. In the present embodiment, the first and second precursor nozzles 8, 10 are similar to the precursor nozzles of Figs. 1A and 1B, and therefore need not be described in detail. In Fig. 2, a flushing gas passage 1 2' is provided between the first and second precursor nozzles 8, 10 for causing the surface 4 of the substrate 6 to pass through a flushing gas, and the first and second precursors A, B is separated from each other. The purge gas passage 12 is a passage of 201217061 extending in parallel with the first and second precursor nozzles 8, 10. The flushing gas passage 12 is equipped with ^3q ri ^ ^ ^ ,, through the extension of the self-rinsing gas valley 39 to the flushing gas, Q, Z of a plurality of conduits 35, and the flushing body of the gas body Gu Yi 39 gas source Can be connected to the flushing unit~ the fluid connection. A flushing gas, the main washing container 3, and the body of the body are supplied to the flushing gas unit 39. The flushing gas passages i, >, &# can also be opened to the nozzle head 2 output face b by a passive fluid connection to the flushing gas container 39 and at least 5 Multi-notch, hole-side gentleman and open D are formed. Output the edge of the face 5 & to have additional flushing gas. This additional flush M s 12 ' as shown in the 2nd towel, the outer flushing of the body channel 12 is the nozzle head output surface 5, * around ... 吏 nozzle head 2, and clearly until the first gas gentleman 毹 ° 〃 The body % is phase separated so that the nozzle can be selectively used for atmospheric pressure to prevent the body from flowing to the surrounding gas for use in the "brother". ^, Comment I King The loss. The μ / wash gas channel can be detachably placed in each edge of the exit face, around the entire ring 5 of the ring. _position in the edge zone, and the circumference is also 'in the specific embodiment, the first can be placed in the "5 in - the first six" is configured to be configured, known as the second precursor nozzle 10 and The force 乂 1 is operated at the output surface Λ * body container 39 # ; _ second pressure. The flushing air squirt 39 is the same as the second pressure of the second and second pressures, the second nozzle Sin. The first and the mouth 8 i〇 can also be combined with the U diagram; Operates like pressure. When the (four) figure is described in the phase of the flushing gas...: The first and second dust are supplied when. Moreover, the scent, the main sound 、, 12 - static flushing gas, and the taste / idea, the sneezing 9 of the second figure, the flushing gas 诵, storage 7, can also be configured as 'to make no breast passage! 2 with the nozzle head around the body% i brother 4 for fluid connection, configuration... Figure in the specific example of the method 201217061. Thus, the conduit 35 can be connected to the gaseous environment 14 in place of the flushing gas container 39. The precursors and flushing gas can be supplied to the mouthpiece 2 via a fluid connection. Alternatively, the nozzle head 2 is provided with one or more precursors and/or flushing gas containers, bottles, or the like such that when the nozzle head is moved, the precursor is and/or will be associated with the nozzle. Exercise together. This configuration reduces the number of difficult fluid connections to a moving nozzle head 2. The invention of Fig. 1A, Fig. 、, and Fig. 2 can also be constructed using any type of precursor nozzle and flushing gas passage. Form 1A, 1B of the flushing gas passages by means of two or more separating holes/same openings, or any type of feature that provides a fluid connection to the gas environment 14 or a separate flushing gas container 39. The specific embodiment of Fig. 2 and the Fig. 2 allow for the use of a gas: gas for the separation of the precursor nozzles without the need to actively supply the flushing gas, and the use of nozzle structures identical to the precursor nozzles 8, 10. The nozzle head of the second embodiment is provided as a first-stage nozzle having at least a 筮, a negative main ^ first inlet and at least a first outlet, and the second precursor nozzle 1 has at least a second inlet and At least - a second outlet: a gas passage between the first and fourth mass nozzles, the flushing gas passage having only one or one opening, 4 second inlets, and no outlets, three nozzles, which will repeat one Second night - people to form a nozzle head. From the two inlets, the flushing gas, helium, and the intermediate baptism system are discharged through the first and second outlets of the first-precursor nozzles. Fig. 3 shows another embodiment in which the first type of drawings and the first type of Fig. 1B are sprayed, and the eight pages are of the same type. The nozzle tip can also be constructed in a different manner than in the third circle. , 12 201217061 The head 2 includes one or more first precursor nozzles 8 for causing the surface of the substrate to wet the first precursor A and two or more second precursor nozzles 1 for making the substrate 6 ® 4 goes through the second precursor B. The first precursor nozzle 8 includes at least a first inlet 18 for supplying a first precursor a, and at least a first outlet 20 for discharging the first - azha - h ^ c massless A. In FIG. 3, the first precursor nozzle head 8 includes a first inlet 18 disposed at one end of the elongated first precursor nozzle 8 and a first discharge port 20 disposed at the first precursor nozzle 8 The other end. Similarly, the second precursor nozzle 10 includes a second inlet 22 disposed at the end of the elongated first precursor nozzle 10 for supplying the second precursor B and a second discharge port 24, The other end of the second precursor nozzle 10 is for discharging the second precursor B. The populations 18, 22 and outlets 2Q, 24 may also have two or more inlets and outlets in the nozzles 8, U), as otherwise indicated in Figure 1B. I, as will be explained later, the nozzle head can also be constructed such that the precursor nozzles 8, 1 do not include any outlets 2, 24, but the nozzle head is provided with one or more separate discharge passages. In Fig. 3, the nozzle head 2 is provided with a plurality of first connecting elements 3〇 for guiding the first precursor A from a certain __first-precursor nozzle 8 to one or more other first-first Mass nozzle 8. The nozzle head 2 is further provided with a plurality of second connecting elements 32 for guiding the second precursor B from a second precursor nozzle material to some or more other second precursor nozzles 1 〇 β connecting element 3 Preferably, the crucible, the crucible comprises a delivery tube, a conduit, a closed passage or a conduit, and a supply between the two or more first precursor nozzles 8, or two or more precursor nozzles 10 Any other necessary components for fluid connections. As shown in FIG. 3, the first-out d2g of a certain first-first f-nozzle 8 is connected to the first inlet 18 of the other-first precursor nozzle 8 by a 13 201217061 connecting element 3〇, The first precursor A is guided from the certain first precursor nozzle 8 to the other first precursor 72. Similarly, a certain second precursor nozzle i. The second outlet 24 is connected to the second inlet 22 of the other second precursor nozzle 10 by at least the second precursor nozzle 1 ,, so that the first _ first fB and the second smear B are from the first The second precursor nozzle 1 is guided to the other second precursor nozzle 10. According to the above, it is conceived to connect two or more precursors 啧喈β, ιη^ to the feeding nozzles 8, 10 so that the precursors can flow successively through the two or more precursor nozzles 8, 1 . Please note that the connecting elements 3G, 32 can also be configured in a different manner than the one shown in Fig. 3, wherein each connecting element M1 is arranged in two or more precursor nozzles 8 or 1 Between 〇. The first connecting element 30 can be disposed between a first precursor nozzle 8 and two or more other first precursor nozzles 8 to guide the first precursor a from the certain first precursor nozzle 8 Lead to the two or more other first-precursor jets f8. Also, the second connecting member 32 may be disposed between a second precursor nozzle (between two or more: straighter than the second precursor nozzle 10) to set the second precursor B from the second precursor The mass nozzle 10 is guided to the two or more other second precursor nozzles 1A.
第3圖及如上述之具體實施例係提供可提升先質A、B 材料效率之方式。當供應先質A、B至噴嘴8、1〇時某些 先質Α、β將不與反應基板6表面4起反應，但通常供應一 過量先質A、B。是以，供應至先質通道8、1〇之先質A、B 中’至少部分不與基板6表面起反應。在先前技藝中，此 超量先質A、B將視為廢料而排放。第3圖之 許超量之先質A、B用於某些其他先質喷嘴8'1〇中: 14 201217061 注意到，可根據噴嘴頭2之構造，依不同方式，與連接元 件30、32形成流體連接。更，請注意到當先質自某一先 質喷嘴8、10導弓丨至另一個時，將有一壓力降。 第一連接元件30可配置於-個或更多第-先質喷嘴8 與至少另一第-先質噴嘴8之間。是以，可使用第一連接 元件30’將某一第一先質噴嘴8連接至數個其他第一先質 喷嘴8,或數個第-先質噴嘴8連接至某—其他第一先質 喷嘴8’或者數個第一先質噴嘴8連接至數個其他第一先 質喷嘴8。在某-具體實施例中，喷嘴頭2包括二個或更 多卜連接元件30,介於二第一先質喷嘴8之間。是以， 先質係自某一第—先質喷嘴8導引至另_第—先質喷嘴 8 ’及排放。噴嘴頭2因此可包括二個或更多此種二第」先 質喷嘴8相互連接元件。可傕 方式連接第：先質㈣1G 連接^32,依相同 第、4圖係顯示一具體實施例之概略視圖，其中嘴 頭包括複數個第—先f喷嘴8、複數個第二先質嘴嘴\〇、 及介於細長型先質喑喈s … 的複數個沖洗氣體通道 ^ Η包括—供應通道4G、44,沿細長型先 質喷嘴8M0之縱向方向延伸。先質嘴嘴8m。一 :放=42、46’沿細長型先質噴嘴8，之縱二向延 伸其大致與供應通道40、44平行且# &，$ 吸力來排放先質… 藉使用真空或 、“ 〇及一笛_ 質噴嘴8包括-第-供應通 :第二供廊、—排放通道42’且同時第二先質嘴嘴10包括 〜通道44及—第二排放通道46。因此，第4圖 15 201217061 係顯示一具體實施例，其中供應通道40、44與排放通道 42、46係提供至同一先質喷嘴8、10,且藉一隔牆52而互 相分離。然而’請注意到，排放通道42、46亦可形成為， 配置於一先質噴嘴8、10或供應通道40、44與沖洗氣體通 道12之間的一分離結構部件。 供應通道40、44設有至少一入口，用於經由喷嘴頭2 之輸出面5來供應先質A、B。最好將該等入口配置成，可 沿供應通道40、44之全身長供應先質A、B。此外，排放 通道42、46設有至少一出口，用於排放先質a、B。最好 將該等出口配置成，可沿排放通道42、46之全身長排放先 質A、B。因此’該入口與該出口可為分別沿供應通道4〇 ' 44與排放通道42、46延伸之一縱向開口。另一選擇為， 供應通道40、44與排放通道42、46可包括，分別沿供應 通道40、44與排放通道42、46身長之成組入口與出口。 可由第4圖中看出，供應通道40、44及排放通道42、46 至少部分地開向輸出面5。供應通道40、44設有一供應開 口 47、48，沿供應通道40、44之縱向方向延伸且開向輸 出面5。亦，排放通道42、46設有一排放開口 43、45，沿 排放通道42 ' 46之縱向方向延伸且開向輸出面5。先質喷 嘴8、10或供應通道40、44係配置成，大致垂直於輸出面 5地供應先質A、B，及先質噴嘴8、10或排放通道42、46 係配置成，大致垂直於輸出面5地排放先質A、B。如此將 因垂直氣體流有助於破壞基板表面上之氣體層，而可提升 該等先質之表面反應。 16 201217061 - 請注意到，第4圖之具體實施例亦可構成為，使供應 通道40、44為先質噴嘴8、10之部分，但排放通道42、 4 6則為一分離部件。基本構想在於，喷嘴頭2包括，位在 輸出面5上之複數個供應通道40、44、複數個沖洗氣體通 道12、及複數個排放通道42、46，其連申順序如下：至少 —第一供應通道40、一第一排放通道42、一沖洗氣體通^ 12、一第二供應通道44、一第二排放通道46、及—沖洗氣 體通道1 2，可選擇性地重複複數次。這與供應通道4〇、44 與排放通道42、46是否為同一結構部件無關。沖洗氣體通 道12可依相同於第1A圖、第π圖、第2圖、及第3圖具 體實施例中者設置，或沖洗氣體通道丨2可設有與先質喷嘴 8、1 0或供應通道40、44同類型之喷嘴。是以，沖洗氣體 通道12可配置成，與一沖洗氣體環境14、16作被動式流 體連接，以使基板6表面4歷經一沖洗氣體，如第u圖、 第1B圖、及第2圖中所顯示者。所有結合第1A圖、第 圖、及第2圖而關於沖洗氣體通道丨2所作之描述，皆亦可 運用至第4圖及第5圖之具體實施例。該沖洗氣體環境係 圍繞喷嘴頭2之氣體環境14、或一分離沖洗氣體容器39。 某一或更多第一先質喷嘴8係配置成，在輸出面5處於一 第一壓力下操作，某一或更多第二先質噴嘴1〇係配置成， 在輪出面5處於一第二壓力下操作’及該沖洗氣體環境係 配置成，高於該第一與第二壓力之一第三壓力。亦可在第 4圖具體實施例中該供應通道與該排放通道之間的輪出面 5處，量測該等第一及第二壓力。是以，排放通道42、46 17 201217061 可自輸出面5排出該等先質與該沖洗氣體二者。 第5圖係顯示-具體實施例，其中喷嘴頭2包括—反 應空間50,設於供應通道4〇、44與排放通道42、铛之間。 反應空間50係開向輸出面5,以使基板6表面4歷經先質 A、B。第4圖係顯示出，相似於第4圖者之一先質噴嘴， 其中排放通道42、46係形成至先質噴嘴8。然而，請注意 到，反應空間50亦可設於僅具有供應通 : 質喷嘴8、丨。與一分離排放通道42、46之間二二 50係配置於供應通道40、44與排放通道42、46之間。反 應空間50係配置成，大致沿供應通道4〇、44之全身長延 伸，且介於輸出面5、與供應及排放通道4〇、44、42、46 之間。反應空間50係配置成，使先質A、B配置成自供應 通道40、44經由反應空間50而流動至排放通道42、46, 且先質A、B之表面反應將在反應空間處發生。 第4圖中噴嘴頭2包括，位在輸出面5上之複數個先 質喷嘴8、10、複數個沖洗氣體通道12、及複數個排放通 道42、46，其連串順序如下：至少一第一先質喷嘴8、一 第一排放通道42、一沖洗氣體通道12、一第二先質喷嘴 10、一第二排放通道46、及一沖洗氣體通道12，可選擇性 地重複一或更多次。該噴嘴頭亦可構成為，包括第3圖具 體實施例中所顯示之一個或更多連接元件30、32。是以， 接續於某一第—先質喷嘴8或第一供應通道40後之某一或 更多第一排放通道42係連接至某一或更多其他第一先質 噴嘴8或第一供應通道4〇，以將第一先質A導引至該某一 18 201217061 或更多其他第—先質喷嘴8或第一供應通道40。相似地， 接續於某一第二先質噴嘴1〇或第二供應通道44後之某一 或更多第二排放通道46係連接至某一或更多其他第二先 質喷嘴10或第二供應通道44，以將第二先質B導引至該 某一或更多其他第二先質喷嘴8或第二供應通道44。 以上說明應可顯示，第1A圖、第1B圖、第2圖、第 3圖及第4圖中揭露及顯示之所有具體實施例，可相互 結合。 熟於本項技藝者應可明白，隨著技術優勢，可依各種 方式實現本發明之構想。本發明及其具體實施例並非以上 述範例為限’而可在巾請㈣範圍之料内變化。 【圖式簡單說明】 以上係參考隨附圖式，結合較佳具體實施例來更詳細 地說明本發明，其中： 第1A圖係一喷嘴頭之—具體實施例概略剖視圖； 第1B圖係第1A圖裝置之噴嘴頭上視圖； 第2圖係一喷嘴頭之另一呈栌奢 /、體貫施例概略剖視圖； 第3圖係第1A圖之噴嘴藤叉 目舰由 貝w碩又一具體實施例概略上視 圖； 及 圖0 第 ㈣顯示4嘴頭更—具體實施例概略剖視圖； 第5圖係顯示一噴嘴頭之一喷嘴某 具體實施例剖視 19 201217061 【主要元件符號說明】 2 喷嘴頭 3 第一通道 4 表面 5 輸出面 6 基板 7 第二通道 8 第一先質喷嘴 9 第一開放部 10 第二先質喷嘴 11 第二開放部 12 沖洗氣體通道 14 氣體環境 16 氣體環境 18 第一入口 20 第一出口 22 第二入口 24 第二出口 26 處理室 30 第一連接元件 32 第二連接元件 33 連接器 35 導管 20 201217061 39 沖洗氣體容器 40 第一供應通道 42 第一排放通道 43 排放開口 44 第二供應通道 45 排放開口 46 第二排放通道 47 供應開口 48 供應開口 50 反應空間 52 隔牆 A 第一先質 B 第二先質 21Figure 3 and the specific embodiments described above provide a means of improving the efficiency of the precursor A, B materials. When the precursors A, B are supplied to the nozzles 8, 1 某些, some of the precursors β, β will not react with the surface 4 of the reaction substrate 6, but usually an excess of precursors A, B are supplied. Therefore, the precursors A and B supplied to the precursor channel 8, 1 are at least partially not reacted with the surface of the substrate 6. In the prior art, this excess precursor A, B will be discharged as waste. The precursors A and B of Figure 3 are used for some other precursor nozzles 8'1: 14 201217061 It is noted that fluids can be formed with the connecting elements 30, 32 in different ways depending on the configuration of the nozzle head 2. connection. Furthermore, please note that there will be a pressure drop when the first mass of the nozzles 8, 10 are bowed to the other. The first connecting element 30 can be disposed between one or more first-precursor nozzles 8 and at least one other first-precursor nozzle 8. Therefore, a first first nozzle 30 can be connected to a plurality of other first precursor nozzles 8 using a first connecting element 30', or a plurality of first-precursor nozzles 8 can be connected to some other first precursor. The nozzle 8' or a plurality of first precursor nozzles 8 are connected to a plurality of other first precursor nozzles 8. In a particular embodiment, the nozzle tip 2 includes two or more connection elements 30 between the two first precursor nozzles 8. Therefore, the precursor is guided from a certain first-precursor nozzle 8 to another _ first-precursor nozzle 8' and discharged. The nozzle head 2 can thus comprise two or more such two first precursor nozzles 8 interconnecting elements. The 第 先 connection: the first (4) 1G connection ^ 32, according to the same, 4 shows a schematic view of a specific embodiment, wherein the mouth comprises a plurality of first - first f nozzle 8, a plurality of second precursor mouth \〇, and a plurality of flushing gas passages □ between the elongated precursors 喑喈 ... include - supply passages 4G, 44 extending in the longitudinal direction of the elongated precursor nozzle 8M0. First mouth mouth 8m. One: the release = 42, 46' along the elongated precursor nozzle 8, the longitudinal two-way extension is substantially parallel to the supply channels 40, 44 and # &, $ suction to discharge the precursor... by using vacuum or, A flute_quality nozzle 8 includes a -first supply passage: a second supply gallery, a discharge passage 42' and at the same time the second precursor nozzle 10 includes a passage 44 and a second discharge passage 46. Thus, Fig. 4 201217061 shows a specific embodiment in which the supply passages 40, 44 and the discharge passages 42, 46 are provided to the same precursor nozzles 8, 10 and separated from each other by a partition wall 52. However, 'note that the discharge passage 42 46 may also be formed as a separate structural component disposed between a precursor nozzle 8, 10 or supply passages 40, 44 and the flushing gas passage 12. The supply passages 40, 44 are provided with at least one inlet for passage through the nozzle The output face 5 of the head 2 supplies the precursors A, B. Preferably, the inlets are configured to supply the precursors A, B along the entire length of the supply passages 40, 44. Further, the discharge passages 42, 46 are provided with at least An outlet for the discharge of precursors a, B. It is preferred to configure the outlets to be The whole body of the passages 42, 46 discharges the precursors A, B. Thus the inlet and the outlet may be longitudinally open along one of the supply passages 4' 44 and the discharge passages 42, 46, respectively. 40, 44 and discharge passages 42, 46 may include sets of inlets and outlets along the length of supply passages 40, 44 and discharge passages 42, 46, respectively. As seen in Figure 4, supply passages 40, 44 and discharge passages 42 46 is at least partially open to the output face 5. The supply passages 40, 44 are provided with a supply opening 47, 48 extending in the longitudinal direction of the supply passages 40, 44 and opening toward the output face 5. Also, the discharge passages 42, 46 are provided with a The discharge openings 43, 45 extend in the longitudinal direction of the discharge passage 42' 46 and open toward the output face 5. The precursor nozzles 8, 10 or supply passages 40, 44 are arranged to supply the precursor A substantially perpendicular to the output face 5. , B, and the precursor nozzles 8, 10 or the discharge passages 42, 46 are arranged to discharge the precursors A, B substantially perpendicular to the output face 5. This will help to destroy the gas layer on the surface of the substrate due to the vertical gas flow. , which can enhance the surface reaction of these precursors. 16 201217061 - It should be noted that the specific embodiment of Fig. 4 can also be configured such that the supply passages 40, 44 are part of the precursor nozzles 8, 10, but the discharge passages 42, 46 are a separate component. The basic idea is that the nozzle The head 2 includes a plurality of supply channels 40, 44 located on the output face 5, a plurality of flushing gas channels 12, and a plurality of discharge channels 42, 46, the sequence of which is as follows: at least - the first supply channel 40, one The first discharge passage 42, a flushing gas passage 12, a second supply passage 44, a second discharge passage 46, and a flushing gas passage 12 may be selectively repeated a plurality of times. This is independent of whether the supply channels 4, 44 and the discharge channels 42, 46 are of the same structural component. The flushing gas passage 12 may be disposed in the same manner as in the first embodiment, the πth diagram, the second diagram, and the third embodiment, or the flushing gas passage 丨2 may be provided with the precursor nozzle 8, 10 or supply. Nozzles of the same type for channels 40, 44. Therefore, the flushing gas passage 12 can be configured to be in passive fluid connection with a flushing gas environment 14, 16 such that the surface 4 of the substrate 6 passes through a flushing gas, as shown in FIG. 5, FIG. 1B, and FIG. Displayer. All of the descriptions of the flushing gas passages 结合2 in connection with Figs. 1A, 2D, and 2 can also be applied to the specific embodiments of Figs. 4 and 5. The flushing gas environment surrounds the gaseous environment 14 of the nozzle head 2, or a separate flushing gas container 39. One or more first precursor nozzles 8 are configured to operate at a first pressure on the output face 5, and one or more second precursor nozzles 1 are configured to be in a first position on the wheel face 5 The operating under two pressures and the flushing gas environment are configured to be higher than a third pressure of the first and second pressures. The first and second pressures may also be measured at the take-up surface 5 between the supply passage and the discharge passage in the embodiment of Fig. 4. Therefore, the discharge passages 42, 46 17 201217061 can discharge the precursors and the flushing gas from the output face 5. Figure 5 is a view showing a specific embodiment in which the nozzle head 2 includes a reaction space 50 disposed between the supply passages 4, 44 and the discharge passages 42 and 铛. The reaction space 50 is opened to the output surface 5 such that the surface 4 of the substrate 6 passes through the precursors A and B. Fig. 4 shows a precursor nozzle similar to that of Fig. 4, in which the discharge passages 42, 46 are formed to the precursor nozzle 8. However, it should be noted that the reaction space 50 may also be provided with only the supply nozzles 8 and 丨. Two or two 50 series between a separate discharge passage 42, 46 are disposed between the supply passages 40, 44 and the discharge passages 42, 46. The reaction space 50 is configured to extend substantially along the entire length of the supply passages 4, 44 and between the output face 5 and the supply and discharge passages 4, 44, 42, 46. The reaction space 50 is arranged such that the precursors A, B are arranged to flow from the supply passages 40, 44 to the discharge passages 42, 46 via the reaction space 50, and the surface reactions of the precursors A, B will occur at the reaction space. The nozzle head 2 in Fig. 4 includes a plurality of precursor nozzles 8, 10, a plurality of flushing gas passages 12, and a plurality of discharge passages 42, 46 located on the output surface 5, the sequence of which is as follows: at least one A precursor nozzle 8, a first discharge passage 42, a flushing gas passage 12, a second precursor nozzle 10, a second discharge passage 46, and a flushing gas passage 12 are selectively repeatable one or more Times. The nozzle head can also be constructed to include one or more of the connecting elements 30, 32 shown in the embodiment of Figure 3. Therefore, one or more first discharge passages 42 connected to a certain first-stage nozzle 8 or the first supply passage 40 are connected to one or more other first precursor nozzles 8 or the first supply. The channel 4 is directed to direct the first precursor A to the certain 18 201217061 or more other first precursor nozzle 8 or first supply passage 40. Similarly, one or more second discharge passages 46 subsequent to a second precursor nozzle 1 or second supply passage 44 are coupled to one or more other second precursor nozzles 10 or second A passage 44 is provided to direct the second precursor B to the one or more other second precursor nozzles 8 or second supply passages 44. The above description should show that all of the specific embodiments disclosed and shown in Figures 1A, 1B, 2, 3, and 4 can be combined with each other. It will be apparent to those skilled in the art that, with the technical advantages, the inventive concept can be implemented in various ways. The present invention and its specific embodiments are not limited to the above examples and may vary within the scope of the towel (four). BRIEF DESCRIPTION OF THE DRAWINGS The invention will be described in more detail with reference to the accompanying drawings, in which: FIG. 1A is a nozzle head - a schematic cross-sectional view of a specific embodiment; 1A is a top view of the nozzle head of the device; Fig. 2 is a schematic cross-sectional view of another nozzle head; the third figure is the nozzle of the 1st AA nozzle DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT; and FIG. 0 (4) shows a 4-headed-------------- Head 3 First channel 4 Surface 5 Output surface 6 Substrate 7 Second channel 8 First precursor nozzle 9 First open part 10 Second precursor nozzle 11 Second open part 12 Flush gas channel 14 Gas environment 16 Gas environment 18 An inlet 20 a first outlet 22 a second inlet 24 a second outlet 26 a processing chamber 30 a first connecting element 32 a second connecting element 33 a connector 35 a conduit 20 201217061 39 a flushing gas container 40 A first supply passage 42 exhaust 43 exhaust passage opening 44 of the second supply passage 45 discharge opening 46 of the second discharge passage 48 opening the supply opening 47 supplying the reaction space 52 the partition wall 50 of the first precursor A second precursor B 21