201207932 六、發明說明： 【發明所屬之技術領域】 本發明是有關對被處理體實施電漿處理的電漿處理方 法及電漿處理裝置，特別是有關控制壁電位的機構。 【先前技術】 電漿電位是具有比周圍的電位高的電位。以圖8所示 的平行平板型電漿處理裝置99爲例說明此。在處理容器 9 00內的電漿處理空間中，當偏壓電位爲負的時序（晶圓 電位爲負）時，亦即晶圓電位Vwafer比壁電位Vwall (亦 即接地）低時，電漿電位Vplasma是形成比壁電位Vwall高 的電位。另一方面，當偏壓電位爲正的時序（晶圓電位爲 正）時，亦即晶圓電位Vwafer比壁電位Vwall高時，電漿 電ill Vpiasma是形成比晶圓電位Vwafer筒的電位。 處理容器900的壁與電漿間的電位差（Vwall-Vplasma )是與蝕刻製程的生產性關係大。亦即，若電位差（ Vwall-Vplasma )過大，則電漿中的離子之往壁面的濺射力 會變強，且電漿中的自由基難以堆積於壁面，處理容器的 壁會被切削，成爲微粒、腔室內污染、零件的消耗等的原 因。 另一方面，若電位差（Vwall-Vpiasma)過小，則電漿 中的離子之往壁面的濺射力會變弱，電漿中的自由基容易 附著於壁面，反應生成物會堆積於壁上而形成膜。例如， 在前工程實行使用CF系氣體的製程時，在製程中CF膜 -5- 201207932 (聚合物）會被形成於處理容器的壁面。若於此狀態下在 其次的工程於同一處理容器內實行使用02氣體的製程， 則會在〇2中混在CF的形式下產生電漿，附著於壁面的 CF膜的成分會進入電漿中，而與其他的物質起化學反應 ，對所望的電漿處理造成不良影響。所謂記憶效應（ Memory Effect )的問題。除了此記憶效應的問題以外， 膜往壁附著越多，越需要頻繁洗滌處理容器內，引起生產 性的降低、製造成本的增大。 而且，近年來，使蝕刻速率等上昇，縮短加工時間， 藉此想要使總生產能力提升之使用者的要求變高。因應於 此要求’需要將更高功率的高頻電力供應給處理容器內。 一旦從高頻電源輸出高功率的高頻電力，則往壁面的濺射 力會變強，另一方面，自由基會難以堆積於壁面，壁的切 削會變大。 專利文獻1是在電漿處理中，對下部電極施加偏壓用 的高頻電力’將離子引入至下部電極。在電漿處理中，附 著物會堆積於上部電極或處理容器的內壁，因此需要洗滌 時，切換開關，使上部電極偏壓成負，對上部電極施加高 頻電力’將離子引入至上部電極。若根據此，則藉由離子 的引入’可除去堆積於上部電極的附著物。 [先行技術文獻] [專利文獻] [專利文獻1]特開平8-22980號公報 201207932 【發明內容】 (發明所欲解決的課題） 然而，專利文獻1是在電漿處理及洗滌處理切換偏壓 用的高頻電力的施加對象之技術，所以無法解決電漿處理 中之壁的切削或膜往壁的形成之問題。 對於此，可考慮控制高頻的功率，而使壁不會過度切 削，且膜不會過度堆積於壁。因爲一般處理容器的壁與電 漿間的電位差（Vwall-vplasma)是仰賴從電極供給的高頻 的功率。 但，高頻的功率，爲了產生電漿，而需要設定成最適 的値。因此，壁的電位並不成爲積極地控制的對象，而是 取決於高頻的功率或處理容器的形式。 並且，在同一處理容器內不同的製程被連續性地實行 時，由於每個製程最適的高頻的功率不同，因此極難在所 有製程條件下將處理容器的壁與電漿間的電位差收於所望 的範圍內。所以，對於所使用的代表性的高頻的功率，以 能夠形成最適的壁與電漿間的電位差之方式設計處理容器 的構造。但，近年來，在同一處理容器內連續實行多層膜 構造的不同的複數的蝕刻製程之多層膜構造的統括蝕刻成 爲主流。因此，在一個處理容器內被要求高頻的功率非常 低的條件及非常高的條件的連續步驟。藉此，壁與電漿間 的電位差（Vwall-vplasma)會形成非常大或非常小，上述 壁的切削或膜往壁的堆積問題會變大。201207932 VI. Description of the Invention: [Technical Field] The present invention relates to a plasma processing method and a plasma processing apparatus for performing plasma treatment on a target object, and more particularly to a mechanism for controlling wall potential. [Prior Art] The plasma potential is a potential having a higher potential than the surrounding potential. The parallel plate type plasma processing apparatus 99 shown in Fig. 8 will be described as an example. In the plasma processing space in the processing container 900, when the bias potential is negative (the wafer potential is negative), that is, when the wafer potential Vwafer is lower than the wall potential Vwall (ie, ground), the electricity is low. The plasma potential Vplasma is a potential that is higher than the wall potential Vwall. On the other hand, when the bias potential is positive (the wafer potential is positive), that is, when the wafer potential Vwafer is higher than the wall potential Vwall, the plasma electricity ill Vpiasma is the potential which forms the wafer potential Vwafer . The potential difference (Vwall-Vplasma) between the wall of the processing vessel 900 and the plasma is large in productivity relationship with the etching process. In other words, if the potential difference (Vwall-Vplasma) is too large, the sputtering force of the ions in the plasma to the wall surface becomes strong, and the radicals in the plasma are hard to accumulate on the wall surface, and the wall of the processing container is cut. Causes of particulates, contamination inside the chamber, consumption of parts, etc. On the other hand, if the potential difference (Vwall-Vpiasma) is too small, the sputtering force of the ions in the plasma to the wall surface becomes weak, the radicals in the plasma easily adhere to the wall surface, and the reaction product accumulates on the wall. A film is formed. For example, when a process using a CF-based gas is carried out in a pre-engineering process, a CF film -5 - 201207932 (polymer) is formed on the wall surface of the processing container in the process. If the process of using the 02 gas is carried out in the same process in the next process in this state, the plasma is generated in the form of CF mixed in the crucible 2, and the components of the CF film attached to the wall surface enter the plasma. It reacts chemically with other substances and adversely affects the desired plasma treatment. The so-called memory effect problem. In addition to the problem of this memory effect, the more the film is attached to the wall, the more it is necessary to frequently wash the inside of the container, resulting in a decrease in productivity and an increase in manufacturing cost. Further, in recent years, the etching rate and the like have been increased to shorten the processing time, and the demand for the user who wants to increase the total production capacity has been increased. In response to this requirement, it is necessary to supply higher-power high-frequency power to the processing container. When high-frequency high-frequency power is output from the high-frequency power source, the sputtering force on the wall surface becomes strong, and on the other hand, radicals are less likely to accumulate on the wall surface, and the wall cutting becomes larger. Patent Document 1 introduces ions into the lower electrode by applying high-frequency electric power for biasing the lower electrode during plasma processing. In the plasma treatment, the deposits may accumulate on the upper electrode or the inner wall of the processing container. Therefore, when washing is required, the switch is switched to bias the upper electrode to be negative, and high-frequency power is applied to the upper electrode to introduce ions to the upper electrode. . According to this, the deposit deposited on the upper electrode can be removed by the introduction of ions. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. Since the technique of applying high-frequency power is applied, it is impossible to solve the problem of cutting of the wall in the plasma processing or formation of the film toward the wall. For this, it is conceivable to control the power of the high frequency so that the wall is not excessively cut and the film does not excessively accumulate on the wall. Since the potential difference (Vwall-vplasma) between the wall of the general processing vessel and the plasma is dependent on the high frequency power supplied from the electrode. However, the high-frequency power needs to be set to optimum enthalpy in order to generate plasma. Therefore, the potential of the wall does not become an object of active control, but depends on the power of the high frequency or the form of the processing container. Moreover, when different processes in the same processing vessel are continuously performed, since the optimum high-frequency power of each process is different, it is extremely difficult to close the potential difference between the wall of the processing container and the plasma under all process conditions. Within the expected range. Therefore, for the representative high frequency power used, the structure of the processing container is designed in such a manner as to form an optimum potential difference between the wall and the plasma. However, in recent years, collective etching of a multilayer film structure in which a plurality of different etching processes of a multilayer film structure are continuously performed in the same processing container has become mainstream. Therefore, a continuous step in which a high frequency power is required to be very low and a very high condition is required in a processing container. Thereby, the potential difference (Vwall-vplasma) between the wall and the plasma is formed to be very large or very small, and the problem of the cutting of the wall or the deposition of the film toward the wall becomes large.
S 201207932 有鑑於上述課題，本發明是以提供一種可一邊安定地 保持電漿的狀態，一邊按照製程來適當地調整壁的電位之 電漿處理方法及電漿處理裝置爲目的。 (用以解決課題的手段） 爲了解決上述課題，若根據本發明的某形態，則可提 供一種電漿處理裝置，係於處理容器內的電漿處理空間產 生電漿，電漿處理被處理體之電漿處理裝置，其特徵係具 備. 電漿激發用高頻電源，其係施加電漿激發用的高頻電 力； 電位調整用高頻電源或直流電源的至少其中任一，該 電位調整用高頻電源係施加比電漿激發用的高頻還低的頻 率之電位調整用的高頻電力，該直流電源係施加直流電壓 載置台，其係載置被處理體；及 輔助電極，其係比被載置於上述載置台的被處理體還 外側，與上述載置台對向配置，且被連接至上述電位調整 用高頻電源或上述直流電源的至少其中任一。 若根據這樣的構成，則設有輔助電極，其係比被載置 於載置台的被處理體還外側，與載置台對向配置，且被連 接至高頻電源或直流電源的至少其中任一。藉此，對輔助 電極施加從高頻電源輸出的高頻電力或從直流電源輸出的 直流電壓的至少其中任一。 -8 - 201207932 由到目前爲止的見解，本發明者發現若對輔助電極施 加從直流電源輸出的直流電壓，則處理容器的壁與電漿間 的電位差（Vwall-vplasma)會變小，若對輔助電極施加從 高頻電源輸出的高頻電力，則其電位差（vwall-vplasma) 會變大。 因此，在反應物容易堆積於壁的製程時，控制成對輔 助電極施加從高頻電源輸出的高頻電力。藉此，處理容器 的壁與電漿的電位差（Vwall-Vplasma)變大，壁面側的鞘 層電壓會變高。藉此，在壁面側的鞘層領域增強離子的加 速，擴大離子對壁的衝突力，而可抑制反應物堆積於壁。 另一方面，在壁容易切削的製程時，控制成對輔助電 極施加從直流電源輸出的直流電壓。藉此，處理容器的壁 與電漿的電位差（Vwan-Vplasnia )變小，壁面側的鞘層電 壓會變低。藉此，在壁面側的鞘層領域減弱離子的加速， 縮小離子對壁的衝突力，而可抑制壁被切削。若根據這樣 的構成，則如此一來在處理容器內，可控制成壁不會過度 切削，且堆積物不會過度附著於壁。 並且，這樣的構成是使用比電漿激發用的高頻還低的 頻率之電位調整的高頻電力，不將電漿生成用的高頻電源 使用於壁電位的控制。因此，電漿生成用的高頻電力可按 照製程來設定成適當的功率。所以，可安定地保持電漿的 狀態。而且，根據這樣的構成’輔助電極是比被處理體還 外側，與載置台對向配置。因此，上述壁電位的控制是與 電漿生成用的控制各獨立，不互相影響。此結果，可一邊 -9 - 201207932 安定地保持被使用在被處理體的加工之電漿的狀態，一邊 適當地調整壁的電位。 輔助電極亦可在上部電極的外緣與該上部電極隔離配 置。 亦可具備上述電位調整用高頻電源及上述直流電源， 切換從上述電位調整用高頻電源往上述輔助電極之高 頻電力的施加及從上述直流電源往上述輔助電極之直流電 壓的施加。 亦可具備偏壓用高頻電源，其係施加偏壓用的高頻電 力至作爲下部電極的上述載置台， 當從上述偏壓用高頻電源施加的高頻電力爲500W以 下時，從上述電位調整用高頻電源施加高頻電力至上述輔 助電極， 當從上述偏壓用高頻電源施加的高頻電力爲 150 0W 以上時，從上述直流電源施加直流電壓至上述輔助電極。 從上述電漿激發用高頻電源施加的高頻電力亦可被設 定於200W以上。 在上述處理容器內連續實行多層膜構造的不同的複數 的蝕刻製程時，按照各蝕刻製程的條件來切換從上述電位 調整用高頻電源往上述輔助電極之高頻電力的施加及從上 述直流電源往上述輔助電極之直流電壓的施加。 亦可具有第1切換機構，其係在上述處理容器內連續 實行多層膜構造的不同的複數的蝕刻製程時，按照各飩刻 製程的條件，在上述輔肋電極與上述上部電極之間切換來 -10- 201207932 自上述電位調整用高頻電源或上述直流電源的高頻電力或 直流電壓的施加對象。 上述電位調整用高頻電源及上述偏壓用高頻電源係由 被連接至上述輔助電極及上述下部電極的1個高頻電源所 構成， 亦可具有第2切換機構，其係切換從上述高頻電源往 上述輔助電極之高頻電力的施加及從同一該高頻電源往上 述下部電極之高頻電力的施加。 上述電位調整用筒頻電源及上述偏壓用高頻電源係由 被連接至上述輔助電極及上述下部電極的1個高頻電源所 構成， 亦可具有功率分配器，其係分配從上述高頻電源往上 述輔助電極施加的高頻電力與從同一該高頻電源往上述下 部電極施加的高頻電力的功率比。 上述輔助電極可由含有矽的材料或金屬所形成。 上述處理容器的壁可由對鋁的母材熱噴塗絕緣物的構 件，或在砂或iS的母材被覆碳化砂的構件所形成。 爲了解決上述課題，若根據本發明的某形態，則可提 供一種電漿處理方法，係使用電漿處理裝置的電漿處理方 法，該電漿處理裝置係施加電漿激發用的高頻電力，而在 處理容器內的電漿處理空間產生電漿， 其特徵爲〃 上述電漿處理裝置係具備： 電位調整用高頻電源或直流電源的至少其中任一，該 -11 - 201207932 電位調整用高頻電源係施加比電漿激發用的高頻還低的頻 率之電位調整用的尚頻電力，該直流電源係施加直流電壓 ;及 輔助電極，其係比被載置於上述載置台的被處理體還 外側，與上述載置台對向配置，且被連接至上述電位調整 用高頻電源或上述直流電源的至少其中任一， 按照上述製程條件，從上述電位調整用高頻電源或上 述直流電源往上述輔助電極施加高頻電力或直流電壓。 上述電漿處理裝置係除了上述電位調整用高頻電源及 上述直流電源外，還具備偏壓用高頻電源，其係施加偏壓 用的高頻電力至作爲下部電極的上述載置台， 當從上述偏壓用高頻電源施加的高頻電力爲50 OW以 下時，從上述電位調整用高頻電源施加高頻電力至上述輔 助電極，In view of the above-mentioned problems, the present invention has an object of providing a plasma processing method and a plasma processing apparatus which can appropriately adjust the potential of a wall in accordance with a process while maintaining the plasma in a stable state. (Means for Solving the Problem) In order to solve the above problems, according to one aspect of the present invention, a plasma processing apparatus can be provided which generates plasma in a plasma processing space in a processing container, and plasma treats the object to be processed. The plasma processing apparatus is characterized in that: a high frequency power source for plasma excitation is applied, and high frequency power for plasma excitation is applied; at least one of a high frequency power source for potential adjustment or a direct current power source is used for the potential adjustment. The high-frequency power source applies high-frequency power for potential adjustment at a frequency lower than a high frequency for plasma excitation, and the DC power source applies a DC voltage mounting table to mount a target object; and an auxiliary electrode It is disposed outside the object to be processed placed on the mounting table, and is disposed opposite to the mounting table, and is connected to at least one of the potential adjustment high-frequency power source or the DC power source. According to such a configuration, the auxiliary electrode is disposed outside the object to be processed placed on the mounting table, disposed opposite to the mounting table, and connected to at least either of the high frequency power source or the DC power source. . Thereby, at least one of the high frequency power output from the high frequency power source or the direct current voltage output from the direct current power source is applied to the auxiliary electrode. -8 - 201207932 From the findings so far, the inventors have found that when a direct current voltage output from a direct current power source is applied to the auxiliary electrode, the potential difference (Vwall-vplasma) between the wall of the processing container and the plasma becomes small, if When the auxiliary electrode applies high-frequency power output from the high-frequency power source, the potential difference (vwall-vplasma) becomes large. Therefore, when the reactant is easily deposited on the wall, the high frequency power output from the high frequency power source is controlled to be applied to the auxiliary electrode. Thereby, the potential difference (Vwall-Vplasma) between the wall of the processing container and the plasma becomes large, and the sheath voltage on the wall surface side becomes high. Thereby, the acceleration of the ions is enhanced in the field of the sheath on the wall side, and the collision force of the ions against the wall is enlarged, and the deposition of the reactants on the wall can be suppressed. On the other hand, when the wall is easy to cut, the DC voltage output from the DC power source is controlled to be applied to the auxiliary electrode. Thereby, the potential difference (Vwan-Vplasnia) between the wall of the processing container and the plasma becomes small, and the sheath voltage on the wall surface side becomes low. Thereby, the acceleration of the ions is weakened in the field of the sheath layer on the wall surface side, and the collision force of the ions against the wall is reduced, and the wall is prevented from being cut. According to this configuration, in the processing container, the wall can be controlled so as not to be excessively cut, and the deposit does not excessively adhere to the wall. Further, such a configuration is to use high-frequency power whose potential is adjusted at a frequency lower than the high frequency for plasma excitation, and does not use the high-frequency power source for plasma generation for wall potential control. Therefore, the high frequency power for plasma generation can be set to an appropriate power in accordance with the process. Therefore, the state of the plasma can be kept stable. Further, according to such a configuration, the auxiliary electrode is disposed outside the object to be processed and opposed to the stage. Therefore, the above-mentioned control of the wall potential is independent of the control for plasma generation, and does not affect each other. As a result, the potential of the wall can be appropriately adjusted while maintaining the state of the plasma used for processing of the object to be processed -9 - 201207932. The auxiliary electrode may also be disposed at an outer edge of the upper electrode from the upper electrode. The high-frequency power source for potential adjustment and the DC power source may be provided to switch the application of the high-frequency power from the potential-adjusting high-frequency power source to the auxiliary electrode and the application of the DC voltage from the DC power source to the auxiliary electrode. A high-frequency power source for biasing, which is to apply a high-frequency power for biasing to the mounting table as a lower electrode, and when the high-frequency power applied from the bias high-frequency power source is 500 W or less, The high-frequency power supply for potential adjustment applies high-frequency power to the auxiliary electrode, and when the high-frequency power applied from the bias high-frequency power source is 150 00W or more, a DC voltage is applied from the DC power source to the auxiliary electrode. The high frequency power applied from the high frequency power source for plasma excitation described above may be set to 200 W or more. When a plurality of different etching processes of the multilayer film structure are continuously performed in the processing container, the application of the high-frequency power from the potential adjusting high-frequency power source to the auxiliary electrode and the DC power source are switched in accordance with the conditions of the etching processes. Application of a DC voltage to the auxiliary electrode. The first switching mechanism may be configured to switch between the auxiliary rib electrode and the upper electrode in accordance with conditions of each etching process when a plurality of different etching processes of the multilayer film structure are continuously performed in the processing container. -10- 201207932 The object to be applied to the high-frequency power source for the potential adjustment or the high-frequency power or DC voltage of the DC power source. The potential adjustment high-frequency power source and the bias high-frequency power source are each constituted by one high-frequency power source connected to the auxiliary electrode and the lower electrode, and may have a second switching mechanism that switches from the above-described high frequency The application of the high frequency power of the frequency power supply to the auxiliary electrode and the application of the high frequency power from the same high frequency power source to the lower electrode. The potentiating power source for potential adjustment and the high frequency power source for biasing are constituted by one high frequency power source connected to the auxiliary electrode and the lower electrode, and may have a power divider that distributes the high frequency The power ratio of the high frequency power applied by the power source to the auxiliary electrode and the high frequency power applied from the same high frequency power source to the lower electrode. The above auxiliary electrode may be formed of a material or a metal containing ruthenium. The wall of the above-mentioned processing container may be formed of a member that thermally sprays an insulator to the base material of aluminum, or a member that is coated with carbonized sand in a base material of sand or iS. In order to solve the above problems, according to an aspect of the present invention, a plasma processing method using a plasma processing method of a plasma processing apparatus for applying high frequency electric power for plasma excitation may be provided. Further, the plasma processing space in the processing container generates plasma, and the plasma processing device includes at least one of a high frequency power supply for potential adjustment or a direct current power supply, and the potential for adjusting the potential is -11 - 201207932 The frequency power supply is a frequency-frequency power for adjusting a potential lower than a high frequency for plasma excitation, the DC power source is applied with a DC voltage, and the auxiliary electrode is processed by being placed on the mounting table. The outer side of the body is disposed opposite to the mounting table, and is connected to at least one of the potential adjustment high-frequency power source or the DC power source, and the potential adjustment high-frequency power source or the DC power source according to the process conditions. A high frequency power or a direct current voltage is applied to the auxiliary electrode. In addition to the high-frequency power supply for potential adjustment and the DC power supply, the plasma processing apparatus further includes a high-frequency power supply for biasing, and applies high-frequency power for biasing to the mounting table as a lower electrode. When the high-frequency power applied by the high-frequency power source for the bias voltage is 50 OW or less, high-frequency power is applied from the potential-adjusting high-frequency power source to the auxiliary electrode.
當從上述偏壓用高頻電源施加的高頻電力爲1 5 00 W 以上時，從上述直流電源施加直流電壓至上述輔助電極。 [發明的效果] 如以上說明，若根據本發明，則可一邊安定地保持電 漿的狀態，一邊按照製程來適當調整壁的電位。 【實施方式】 以下，一邊參照附圖一邊詳細說明有關本發明的合適 的實施形態。另外，在本說明書及圖面中，有關實質上具 -12- 201207932 有同一機能構成的構成要素是附上同一符號，藉此省略重 複說明。 <第1實施形態> (電漿處理裝置的全體構成） 首先，一邊參照圖1—邊說明有關本發明的第1實施 形態的電漿處理裝置的全體構成。圖1是模式性地顯示本 實施形態的電容耦合型（平行平板型）的蝕刻裝置的縱剖 面圖。蝕刻裝置10是在處理容器內部電漿處理被處理體 的電漿處理裝置之一例。 蝕刻裝置10是具有電漿處理晶圓W的處理容器100 。處理容器100是圓筒狀，且被接地。處理容器100是由 例如在鋁的母材熱噴塗絕緣物的構件，在矽或鋁的母材被 覆碳化矽的構件所形成。 在處理容器100的內部，對向配設有上部電極105及 下部電極110，藉此構成一對的平行平板電極。上部電極 105是由鋁或矽所形成，在鋁的表面熱噴塗氧化鋁或氧化 釔。在上部電極105貫通有複數的氣孔105a，可使由氣 體供給源115供給的氣體從複數的氣孔i〇5a導入至處理 容器內。 在下部電極110設有載置晶圓W的載置台120。載置 台120是由鋁等的金屬所形成，隔著未圖示的絕緣體，藉 由支撐構件123所支撐。藉此，下部電極11〇是形成電氣 性浮起的狀態。在載置台12〇的外周附近設置具有細孔的When the high-frequency power applied from the bias high-frequency power source is 1 500 W or more, a DC voltage is applied from the DC power source to the auxiliary electrode. [Effect of the Invention] As described above, according to the present invention, the potential of the wall can be appropriately adjusted in accordance with the manufacturing process while maintaining the state of the plasma in a stable manner. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In addition, in the specification and the drawings, the components having the same functional configuration as those of the substantially -12-201207932 are denoted by the same reference numerals, and the repeated description is omitted. <First Embodiment> (Entire Configuration of Plasma Processing Apparatus) First, the overall configuration of the plasma processing apparatus according to the first embodiment of the present invention will be described with reference to Fig. 1 . Fig. 1 is a longitudinal cross-sectional view schematically showing an etching apparatus of a capacitive coupling type (parallel flat type) of the embodiment. The etching apparatus 10 is an example of a plasma processing apparatus that plasma-treats a to-be-processed object in a processing container. The etching apparatus 10 is a processing container 100 having a plasma processing wafer W. The processing container 100 is cylindrical and grounded. The processing container 100 is formed of a member that thermally sprays an insulator, for example, on a base material of aluminum, and a member in which a base material of tantalum or aluminum is coated with tantalum carbide. Inside the processing container 100, the upper electrode 105 and the lower electrode 110 are disposed opposite each other, thereby forming a pair of parallel plate electrodes. The upper electrode 105 is formed of aluminum or tantalum, and is thermally sprayed with aluminum oxide or ruthenium oxide on the surface of the aluminum. A plurality of air holes 105a are inserted through the upper electrode 105, and the gas supplied from the gas supply source 115 can be introduced into the processing container from the plurality of air holes i?5a. The lower electrode 110 is provided with a mounting table 120 on which the wafer W is placed. The mounting table 120 is made of a metal such as aluminum, and is supported by a support member 123 via an insulator (not shown). Thereby, the lower electrode 11A is in a state of being electrically floated. Provided with pores near the outer circumference of the mounting table 12A
S -13- 201207932 擋板125，控制氣流。檔板125是被接地。 在上部電極105的外周附近配置有環狀的輔助電極 165。輔助電極165是由含矽的材料或金屬所形成。當輔 助電極165爲金屬時’其表面熱噴塗氧化銘（Alumina) 或氧化纟乙。輔助電極165是藉由絕緣構件17〇，來與 上部電極105及處理容器100絕緣。如此—來，輔助電極 165是其間夾著絕緣構件170在上部電極1〇5的外緣與該 上部電極105隔離配置。並且，輔助電極ι65是配置於比 晶圓W還外側’與載置台1 2 0對向的位置，藉此不影響 所被生成的電漿（塊材電漿）。 在輔助電極165連接可變直流電源Dc (以下亦稱爲 直流電源1 3 0 )’可使由直流電源1 3 0供給的直流電流施 加於輔助電極165。並且，在輔助電極165經由整合器 135來連接電位調整用高頻電源（LF) 140，可使比電漿 激發用的高頻更低的300kHz〜13.56MHz以下的電位調整 用的高頻施加於輔助電極165。 13.56MHz以下的高頻’及直流電壓是無助於電漿的生 成。因此，由電位調整用高頻電源140及直流電源130來 施加於輔助電極165的高頻電力及直流電壓是只助於離子 的引入或壁的電位的控制。藉此，藉由直流電源130及電 位調整用高頻電源140，可不使處理容器內所生成的電漿 變動，來控制處理容器的壁與電漿的電位差（Vwall-Vplasma )。此結果，可控制成膜不會過度附著於上部電極 105或處理容器1〇〇的壁，且不會過度切削上部電極1〇5 -14- 201207932 或處理容器10 0的表面。 另外，在本實施形態中，輔助電極165是被 流電源130及電位調整用高頻電源140的雙方， 連接至直流電源130及電位調整用高頻電源140 中任一即可。 在下部電極110經由整合器145來連接高 HF) 15〇»電漿激發用高頻電源150是輸出有助 成的13.56MHz以上的高頻電力（HF功率）。 電漿激發用高頻電源150輸出60MHz的高頻。 給源1 1 5供給的氣體是藉由從電漿激發用高頻電 出的高頻的電場能量所激發，藉此在電漿處理空 生電漿。在電漿處理空間U是藉由所生成的電 圓W施以蝕刻處理。另外，電漿處理空間U是 器100的內壁、擋板125及載置台120所包圍的 在下部電極110經由整合器155來連接偏壓 源160。偏壓用高頻電源160是輸出比電漿激發 更低的3 00kHz〜13,56MHz以下的偏壓用的高頻 功率）。如此，藉由如此對載置台120施加偏壓 朝載置台120引入電漿中的離子。 另外，從電漿激發用高頻電源15〇輸出的高 只要 1 3.56MHz以上即使，例如可爲40MHz、 100MHz。並且，從偏壓用高頻電源160輸出的 是只要1 3 ·56ΜΗζ以下即可’例如可爲800kHz 3MHz » 連接至直 但只要被 的至少其 頻電源（ 於電漿生 在此，從 由氣體供 源1 5 0輸 :間U產 漿來對晶 以處理容 空間。 用高頻電 用的高頻 電力（LF 電壓，可 頻電力是 60MHz、 高頻電力 ' 2MHz' 201207932 在處理容器100的底面設有排氣口 18〇，藉由 至排氣口 180的排氣裝置（未圖示）來對處理容器 內部進行排氣’使處理容器內維持於所望的真空狀 (往輔助電極的DC，LF供給） 在此’詳細說明有關對上述構成的蝕刻裝置1 DC’ LF至輔助電極165。 近年來，在同一處理容器內連續實行多層膜構 同的複數的蝕刻製程之統括蝕刻成爲主流。因此， 處理容器內被要求高頻的功率非常低的條件及非常 件的連續步驟。藉此，處理容器100的壁面與電獎 位差（Vwall-vplasma)會形成非常大或非常小，壁 或往壁的堆積問題會變大。 對於此問題’本發明者發現若對輔助電極165 直流電源130輸出的直流電壓，則處理容器1〇〇的 發間的電位差（Vwall-Vpiasma)會變小，若對輔助電 施加從電位調整用高頻電源14〇輸出的高頻電力， 位差（Vwall-vplasma)會變大。 因此’在反應物容易堆積於壁的製程時，控制 助電極165施加從電位調整用高頻電源14〇輸出的 力。藉此，處理容器的壁與電漿的電位拜rv ^ \ V w a 11 - )變大，壁面側的鞘層電壓會變高。藉此，在壁面 層領域增強離子的加速’擴大離子對壁的衝突力， 制反應物堆積於壁。 被連接 1 00的 態。 0供給 造的不 在一個 高的條 間的電 的切削 施加從 壁與電 極165 則其電 成對輔 高頻電 V plasma 側的鞘 而可抑 •16- 201207932 另一方面，在壁容易切削的製程時，控制成對輔助電 極165施加從直流電源130輸出的直流電壓。藉此，處理 容器的壁與電漿的電位差（Vwall-Vplasma )變小，壁面側 的鞘層電壓會變低。藉此，在壁面側的鞘層領域減弱離子 的加速，縮小離子對壁的衝突力，而可抑制壁被切削。若 根據此構成，則如此一來在處理容器內，可控制成壁不會 過度切削，且堆積物不會過度附著於壁。一邊參照圖2及 圖3 —邊說明有關以上的理論。 在圖2是將下部電極之電漿激發用的高頻電力（HF 功率）固定於l5〇〇w，將下部電極之偏壓用的高頻電力（ LF功率）設成可變來表示於橫軸，將電漿中的氬離子Ar + 的最大能量表示於縱軸時的微粒發生及聚合物附著的狀態 。從偏壓用高頻電源是輸出不助於電漿的生成之 13.56MHz以下的偏壓用的高頻電力。圖表上的直線是從 上起表示偏壓用的高頻電力爲2MHz，A/C比爲6時，偏 壓用的高頻電力爲13MHz，A/C比爲4時，偏壓用的高頻 電力爲13MHz’ A/C比爲6時。在此，A/C比表示陽極及 陰極間之非對稱性，例如壁側（陽極）之面積與晶圓側（ 陰極）之面積的比。 此圖表是表示在離子的最大能量爲1 5 0[eV]以上，會 有因壁切削而產生微粒的憂慮，在75[eV]以下，會有聚 合物附著於壁的憂慮。但，無論在哪個條件時，將離子的 最大能量控制於75[eV]〜150[eV]是在上述連續步驟的製 程中幾乎不可能。 201207932 在此，比較圖表內的3條直線可知，所有的情況，LF 功率越高，濺射力越大，壁容易切削。因此，可知比起不 施加偏壓用的高頻電源的LF功率時，施加高頻電源的LF 功率時，壁的電位會變高，濺射力會增加。因此，可知爲 了防止膜往壁附著，最好施加高頻電源的LF功率。 以上的說明及圖2是說明有關被施加於下部電極的偏 壓用高頻電力與濺射力的關係，但對其他的構件施加同程 度的頻率的高頻電力，亦可藉由同樣的原理來導出高頻電 力與濺射力的關係。S -13- 201207932 Baffle 125 controls airflow. The shutter 125 is grounded. An annular auxiliary electrode 165 is disposed in the vicinity of the outer periphery of the upper electrode 105. The auxiliary electrode 165 is formed of a ruthenium-containing material or metal. When the auxiliary electrode 165 is a metal, its surface is thermally sprayed with Alumina or Aluminium Oxide. The auxiliary electrode 165 is insulated from the upper electrode 105 and the processing container 100 by the insulating member 17A. In this manner, the auxiliary electrode 165 is disposed apart from the upper electrode 105 at the outer edge of the upper electrode 1〇5 with the insulating member 170 interposed therebetween. Further, the auxiliary electrode ι65 is disposed at a position outside the wafer W and facing the mounting table 120, thereby not affecting the generated plasma (block plasma). The auxiliary DC electrode 165 is connected to the variable DC power source Dc (hereinafter also referred to as DC power source 1 300), and the DC current supplied from the DC power source 130 is applied to the auxiliary electrode 165. Further, the auxiliary electrode 165 is connected to the potential adjustment high-frequency power source (LF) 140 via the integrator 135, and a high frequency for potential adjustment of 300 kHz to 13.56 MHz or less lower than the high frequency for plasma excitation can be applied to the auxiliary electrode 165. Auxiliary electrode 165. The high frequency ' and DC voltage below 13.56 MHz are not conducive to the generation of plasma. Therefore, the high-frequency power and the DC voltage applied to the auxiliary electrode 165 by the potential adjustment high-frequency power source 140 and the DC power source 130 are only for the introduction of ions or the control of the potential of the wall. Thereby, the DC power source 130 and the potential adjusting high-frequency power source 140 can control the potential difference (Vwall-Vplasma) between the wall of the processing container and the plasma without changing the plasma generated in the processing container. As a result, it is possible to control the film formation from excessively adhering to the upper electrode 105 or the wall of the processing container 1〇〇 without excessively cutting the surface of the upper electrode 1〇5 -14-201207932 or the processing container 100. In the present embodiment, the auxiliary electrode 165 is connected to both the DC power source 130 and the potential adjustment high-frequency power source 140, and is connected to both the DC power source 130 and the potential adjustment high-frequency power source 140. The lower electrode 110 is connected to the high HF via the integrator 145. The high frequency power source 150 for plasma excitation is a high frequency power (HF power) of 13.56 MHz or more which is outputted. The plasma excitation high frequency power source 150 outputs a high frequency of 60 MHz. The gas supplied to the source 1 15 is excited by the high-frequency electric field energy which is excited by the high-frequency electricity from the plasma excitation, whereby the plasma is treated in the plasma. In the plasma processing space U, an etching process is performed by the generated electric circle W. Further, the plasma processing space U is surrounded by the inner wall of the device 100, the shutter 125, and the mounting table 120. The lower electrode 110 is connected to the bias source 160 via the integrator 155. The bias high frequency power supply 160 is a high frequency power for outputting a bias voltage of 300 rpm to 13 MHz below the plasma excitation. Thus, by applying a bias voltage to the mounting table 120 as described above, ions in the plasma are introduced toward the mounting table 120. Further, the output from the high-frequency power source for plasma excitation 15 只要 is as high as 1 3.56 MHz or more, and may be, for example, 40 MHz or 100 MHz. Further, the output from the bias high-frequency power source 160 is only 1 3 · 56 ΜΗζ or less 'for example, 800 kHz 3 MHz » is connected to the straight but as long as it is at least its frequency power source (the plasma is generated here, the gas is derived from Supply 1 50 transmission: inter-U slurry to treat the crystal to handle the space. High-frequency power for high-frequency electricity (LF voltage, frequency power is 60MHz, high-frequency power '2MHz' 201207932 in the processing container 100 An exhaust port 18 is provided on the bottom surface, and the inside of the processing container is exhausted by an exhaust device (not shown) to the exhaust port 180. The inside of the processing container is maintained in a desired vacuum (DC to the auxiliary electrode) LF Supply) Here, the etching apparatus 1 DC' LF to the auxiliary electrode 165 having the above configuration will be described in detail. In recent years, the etching of a plurality of etching processes in which the multilayer film is continuously performed in the same processing container has become mainstream. Therefore, the processing of the container is required to have a very low frequency of high frequency power and a continuous step of very high parts. Thereby, the wall surface of the processing container 100 and the Vwall-vplasma are formed to be very large or very small, wall or The problem of the accumulation of the wall is increased. The inventors have found that the potential difference (Vwall-Vpiasma) between the cells of the processing container 1 is reduced when the DC voltage output from the auxiliary electrode 165 DC power source 130 is applied. When the high-frequency power output from the potential adjustment high-frequency power source 14A is applied to the auxiliary power, the potential difference (Vwall-vplasma) becomes large. Therefore, when the reactant is easily deposited on the wall, the control electrode 165 is applied. The force for outputting the high-frequency power source 14〇 of the potential is adjusted. Thereby, the potential of the wall of the processing container and the plasma is increased by rv ^ \ V wa 11 - ), and the sheath voltage on the wall side becomes higher. The wall layer field enhances the acceleration of the ions 'enlarges the ion-to-wall collision force, and the reactants accumulate on the wall. The state is connected to 100. 0 The supply of electrical cutting that is not between a high strip is applied from the wall and the electrode 165 Then, it is electrically coupled to the sheath of the auxiliary high-frequency electric V plasma side. 16-201207932 On the other hand, when the wall is easy to cut, the DC voltage output from the DC power source 130 is controlled to be applied to the auxiliary electrode 165. Here, The potential difference (Vwall-Vplasma) between the wall and the plasma of the container is reduced, and the sheath voltage on the wall side is lowered. Thereby, the acceleration of the ions is weakened in the field of the sheath on the wall side, and the collision force of the ions against the wall is reduced. According to this configuration, in the processing container, the wall can be controlled so that the wall does not excessively cut, and the deposit does not excessively adhere to the wall. Referring to FIG. 2 and FIG. In the above theory, in Fig. 2, the high-frequency power (HF power) for exciting the plasma of the lower electrode is fixed at 15 〇〇w, and the high-frequency power (LF power) for biasing the lower electrode is set to In the horizontal axis, the maximum energy of the argon ion Ar + in the plasma is expressed on the vertical axis, and the state in which the particles are generated and the polymer adheres. The high-frequency power source for bias voltage is a high-frequency power for outputting a bias voltage of 13.56 MHz or less which does not contribute to the generation of plasma. The straight line on the graph indicates that the high-frequency power for biasing is 2 MHz from the top, and the A/C ratio is 6, the high-frequency power for biasing is 13 MHz, and the A/C ratio is 4, and the bias voltage is high. The frequency power is 13 MHz' A/C ratio is 6. Here, the A/C ratio indicates the asymmetry between the anode and the cathode, for example, the ratio of the area of the wall side (anode) to the area of the wafer side (cathode). This graph indicates that the maximum energy of the ions is 150 or more [eV] or more, and there is a concern that particles are generated by wall cutting. When the concentration is 75 [eV] or less, there is a concern that the polymer adheres to the wall. However, controlling the maximum energy of ions at 75 [eV] 150 150 [eV] is almost impossible in the process of the above successive steps, regardless of the conditions. 201207932 Here, comparing the three straight lines in the graph, in all cases, the higher the LF power, the larger the sputtering force and the easier the wall to cut. Therefore, it is understood that when the LF power of the high-frequency power source is applied, the potential of the wall is increased and the sputtering power is increased, compared to the LF power of the high-frequency power source for which the bias voltage is not applied. Therefore, it is understood that it is preferable to apply the LF power of the high-frequency power source in order to prevent the film from adhering to the wall. The above description and FIG. 2 are views for explaining the relationship between the high-frequency power for bias applied to the lower electrode and the sputtering force. However, the same principle can be applied to the high-frequency power of the same frequency to other members. To derive the relationship between high frequency power and sputtering force.
圖3是表示在上部電極105施加OV、-150V、-300V 的直流電壓DCS時的直·流電壓DCS與壁的電位的關係。 在圖3是將施加於下部電極110的偏壓用的高頻電力（LF 功率）設成可變來表示於橫軸，使LF功率變化時的壁的 電位。另外，此時的製程條件是壓力：30mT，氣體： C4F6 氣體/〇2 氣體/Ar 氣體=70/70/200sccm，40MHz 的 RF 功率：1 500W ° 由圖3的3條直線來看可知，比起不施加直流電壓 DCS時（0V)，施加直流電壓DCS時（-150V、-300V) ，壁的電位會變低。因此，爲了防止壁切削，最好將直流 電壓DCS施加於上部電極。 以上的說明及圖3是說明有關被施加於上部電極1〇5 的直流電壓DCS與壁的電位的關係，但對其他的構件施 加直流電壓DCS，亦可藉由同樣的原理來導出直流電壓 DCS與壁的電位的關係。 • 18 - 201207932 電漿是藉由施加於下部電極110的高頻電力（HF功 率）來主要產生於晶圓W的上方。因此，本實施形態是 如前述般，在上部電極1 05的外周附近，比晶圓W更外 側配置輔助電極165。藉此，不會對施加於下部電極110 的HF功率之電漿生成造成影響，可藉由施加於輔助電極 1 6 5的LF功率或直流電壓來只控制壁的電位。 以上，藉由從直流電源130或電位調整用高頻電源 140施加直流電壓或LF功率至輔助電極165，可不使處理 容器內所生成的電漿變動，來控制處理容器1〇〇的壁與電 漿的電位差（Vwall-Vplasma)，形成處理容器100的壁不 會過度切削，且膜不會過度附著的狀態" (多層膜的連續蝕刻的具體例） 其次，一邊參照圖4 一邊說明有關使用本實施形態的 蝕刻裝置10在同一處理容器內連續實行多層膜構造的不 同的複數的蝕刻製程時的具體例。在此，如圖4(a)所 示，在矽基板Si上，由下依序層疊Si 02膜40、非晶形碳 膜50、SiON膜60、反射防止膜（BARC) 70、光阻劑膜 80 ° (反射防止膜B ARC + SiON膜的蝕刻） 在本例的多層膜的連續蝕刻中，首先，以光阻劑膜 8〇作爲光罩，蝕刻反射防止膜70及SiON膜60。此時的 製程條件是壓力/100mT，氣體種類/CF4氣體，氣體流量3 is a view showing the relationship between the direct current voltage DCS and the potential of the wall when the direct current voltage DCS of OV, -150 V, and -300 V is applied to the upper electrode 105. In Fig. 3, the high-frequency power (LF power) for biasing applied to the lower electrode 110 is set to be variable on the horizontal axis, and the potential of the wall when the LF power is changed. In addition, the process conditions at this time are pressure: 30 mT, gas: C4F6 gas / 〇 2 gas / Ar gas = 70 / 70 / 200 sccm, 40 MHz RF power: 1 500 W ° from the three straight lines of Figure 3, the ratio When the DC voltage DCS is not applied (0 V), when the DC voltage DCS is applied (-150 V, -300 V), the potential of the wall becomes low. Therefore, in order to prevent wall cutting, it is preferable to apply a DC voltage DCS to the upper electrode. The above description and FIG. 3 show the relationship between the DC voltage DCS applied to the upper electrode 1A5 and the potential of the wall. However, by applying a DC voltage DCS to other members, the DC voltage DCS can be derived by the same principle. Relationship with the potential of the wall. • 18 - 201207932 The plasma is mainly generated above the wafer W by the high frequency power (HF power) applied to the lower electrode 110. Therefore, in the present embodiment, as described above, the auxiliary electrode 165 is disposed on the outer side of the outer periphery of the upper electrode 105 than the wafer W. Thereby, the plasma generation of the HF power applied to the lower electrode 110 is not affected, and only the potential of the wall can be controlled by the LF power or the DC voltage applied to the auxiliary electrode 165. As described above, by applying a DC voltage or LF power from the DC power source 130 or the potential adjustment high-frequency power source 140 to the auxiliary electrode 165, the wall and the electricity of the processing container 1 can be controlled without changing the plasma generated in the processing container. The potential difference (Vwall-Vplasma) of the slurry forms a state in which the wall of the processing container 100 is not excessively cut and the film does not excessively adhere. (Specific example of continuous etching of the multilayer film) Next, the use will be described with reference to FIG. The etching apparatus 10 of this embodiment continuously performs a specific example of a plurality of different etching processes of the multilayer film structure in the same processing container. Here, as shown in FIG. 4(a), on the germanium substrate Si, the Si 02 film 40, the amorphous carbon film 50, the SiON film 60, the anti-reflection film (BARC) 70, and the photoresist film are laminated in this order. 80 ° (etching of the anti-reflection film B ARC + SiON film) In the continuous etching of the multilayer film of this example, first, the photoresist film 8 is used as a mask to etch the anti-reflection film 70 and the SiON film 60. The process conditions at this time are pressure / 100mT, gas type / CF4 gas, gas flow
S -19- 201207932 /2 0〇Sccm，施加於下部電極110的高頻電力（電漿激發用 高頻電源150) /頻率40MHz/功率1 000W，施加於下部電 極110的高頻電力（偏壓用高頻電源160) /頻率3MHz/功 率0W。此製程是在下部電極11〇未被施加LF功率。因 此，在製程中，壁未被攻擊。所以，膜容易附著於壁。因 此，藉由對輔助電極165施加電位調整用高頻電源140的 LF功率來提高壁的電位。藉此，可增強往壁的濺射力來 防止膜往壁附著。 (非晶形碳膜a-Carbon的蝕刻） 其次，蝕刻圖4 ( b )所示的非晶形碳（α -碳）膜5 0 。此時的製程條件是壓力/10mT，氣體種類/02氣體/COS 氣體的混合氣體，氣體流量/4 00/2 0 seem，施加於下部電 極110的高頻電力（電漿激發用高頻電源150) /頻率 40MHz/功率1 000W，施加於下部電極110的高頻電力（ 偏壓用高頻電源160) /頻率3MHz/功率0W。在此製程也 是未對下部電極1 1 0施加LF功率，所以壁未被攻擊。但 ，本製程是藉由氣體種類，在壁未附著膜。以上，本鈾刻 的實行時，可不對輔助電極〗65施加任何的功率。 (Si〇2膜的蝕刻） 其次，蝕刻圖4(C)所示的Si〇2膜40。此時的製程 條件是壓力/30mT、氣體種/C4F6/02/Ar的混合氣體’氣體 流量/70/70/200sccm，施加於下部電極11〇的高頻電力（ -20- 201207932 電漿激發用高頻電源150) /頻率40MHz/功率1 500W，施 加於下部電極110的高頻電力（偏壓用高頻電源160) ) / 頻率3MHz/功率4500W。在此製程，從偏壓用高頻電源 160輸出的LF功率是4500W，所以壁被攻擊。因此，壁 會被切削。所以，對輔助電極165施加直流電壓DCS來 降低壁的電位。藉此，降低壁的電位來減弱濺射力，可防 止壁切削。 如此，本實施形態是按照同一處理容器內的多層膜的 連續蝕刻製程，在各製程開始前切換直流電源130及電位 調整用高頻電源140與輔助電極165的連接。藉此，調整 壁的電位來抑制微粒的發生或膜往壁附著，控制成壁不會 過度切削，且堆積物不會過度附著於壁。 特別是在 HARC ( High Aspect Ratio Contact) ，一·般 使用2MHZ程度低的頻率作爲偏壓用的高頻電力。因此， 如圖2所示，當施加於下部電極110的高頻電力爲500W 以下時，會有聚合物附著的憂慮，當施加於下部電極110 的高頻電力爲l5〇〇W以上時，會有微粒產生的憂慮。因 此，最好以上述功率爲基準來切換直流電源130及電位調 整用高頻電源140。 亦即’當從偏壓用局頻電源160施加的高頻電力爲 5〇OW以下時，由電位調整用高頻電源14〇來對輔助電極 165施加高頻電力，當從偏壓用高頻電源160施加的高頻 電力爲1 500W以上時，由直流電源1 30來對輔助電極165 施加直流電壓。藉此，在HARC等的製程中，即使使用 -21 · 201207932 2 MHz程度低的頻率作爲偏壓用的高頻電力時，還是可控 制成壁不會過度切削，且堆積物不會過度附著於壁。 另外’當從偏壓用高頻電源160施加的高頻電力爲比 500W大’比l5〇〇W小時，不會有微粒產生及聚合物附著 的憂慮。所以，在此範圍中，不需要從直流電源130及電 位調整用高頻電源140施加電力至輔助電極165。 並且’如此的直流電源130及電位調整用高頻電源 140之電力的施加的控制是從電漿激發用高頻電源i 50輸 出的高頻的功率爲設定成200W以上者爲基準。 <第2實施形態> 其次，一邊參照圖5 —邊說明有關本發明的第2實施 形態的蝕刻裝置的全體構成。第2實施形態的蝕刻裝置 10是直流電源130及電位調整用高頻電源140與上部電 極105電極及輔助電極165的連接和第1實施形態不同。 因此，以該不同點爲中心進行說明，有關與第1實施形態 相同的構成則省略說明。 本實施形態的直流電源1 3 0及電位調整用高頻電源 140是不僅輔助電極165，也被連接至上部電極105。在 直流電源130及電位調整用高頻電源140與上部電極105 之間設有開關200。在直流電源130及電位調整用高頻電 源140與輔助電極165之間設有開關205。 開關200及開關205是按照各蝕刻製程的條件，在輔 助電極165與上部電極105之間切換來自電位調整用高頻 -22- 201207932 電源140或直流電源130的尚頻電力或直流電壓的施加對 象之第1切換機構的一例。 本實施形態是在處理容器內連續實行多層膜構造的不 同的複數的蝕刻製程時，按照各蝕刻製程的條件來切換從 電位調整用高頻電源140或直流電源130往輔助電極165 的電力施加、及從電位調整用高頻電源140或直流電源 130往上部電極105的電力施加。 一旦關閉開關200而開啓開關205，則與第1實施形 態同樣，直流電源1 3 0及電位調整用高頻電源1 40與輔助 電極165會被連接。藉此，可利用直流電源130及電位調 整用高頻電源140來進行按照製程的壁電位的控制。 另一方面，一旦開啓開關200而關閉開關205，則直 流電源130及電位調整用高頻電源140與上部電極105會 被連接。藉此’可利用直流電源1 3 0及電位調整用高頻電 源1 40來控制電漿的特性或上部電極1 〇5的表面狀態。 例如’若由電位調整用高頻電源140來對上部電極 105施加13.56MHz以下的高頻電力，則可不對所生成的 電漿造成影響來引入離子至上部電極105。如此一來，在 上部電極105的表面’使離子衝突於包含由矽所形成的部 分的上部電極105，藉此可防止膜堆積於上部電極105。 一旦從直流電源1 3 0施加直流電壓至上部電極丨〇 5， 則往上部電極1 05的離子攻擊會被促進，可抑制聚合物膜 堆積至上部電極105。 並且’一旦從直流電源130施加直流電壓至上部電極S -19- 201207932 /2 0〇Sccm, high-frequency power applied to the lower electrode 110 (high-frequency power source for plasma excitation 150) / frequency 40 MHz / power 1 000 W, high-frequency power applied to the lower electrode 110 (bias Use high frequency power supply 160) / frequency 3MHz / power 0W. This process is such that no LF power is applied to the lower electrode 11A. Therefore, the wall was not attacked during the manufacturing process. Therefore, the film is easily attached to the wall. Therefore, the potential of the wall is increased by applying the LF power of the potential adjustment high-frequency power source 140 to the auxiliary electrode 165. Thereby, the sputtering force to the wall can be enhanced to prevent the film from adhering to the wall. (Etching of Amorphous Carbon Film a-Carbon) Next, the amorphous carbon (α-carbon) film 50 shown in Fig. 4 (b) is etched. The process conditions at this time are a pressure//10 mT, a gas type 02 gas/COS gas mixed gas, a gas flow rate/4 00/2 0 seem, and a high frequency power applied to the lower electrode 110 (a plasma excitation high frequency power source 150) / Frequency 40 MHz / power 1 000 W, high frequency power applied to the lower electrode 110 (high frequency power supply 160 for bias) / frequency 3 MHz / power 0 W. Also in this process, LF power is not applied to the lower electrode 110, so the wall is not attacked. However, this process is based on the type of gas, and the film is not attached to the wall. In the above, when the uranium engraving is carried out, no power can be applied to the auxiliary electrode 650. (Etching of Si〇2 Film) Next, the Si〇2 film 40 shown in Fig. 4(C) is etched. The process conditions at this time are a mixed gas of a pressure/30 mT, a gas species/C4F6/02/Ar, a gas flow rate of 70/70/200 sccm, and a high-frequency power applied to the lower electrode 11〇 (-20-201207932 for plasma excitation). High-frequency power supply 150) / frequency 40 MHz / power 1 500 W, high-frequency power applied to the lower electrode 110 (high-frequency power supply 160 for bias)) / frequency 3 MHz / power 4500W. In this process, the LF power output from the bias high frequency power supply 160 is 4500W, so the wall is attacked. Therefore, the wall will be cut. Therefore, a DC voltage DCS is applied to the auxiliary electrode 165 to lower the potential of the wall. Thereby, the potential of the wall is lowered to weaken the sputtering force, and wall cutting can be prevented. As described above, in the present embodiment, the DC power supply 130 and the potential adjustment high-frequency power source 140 are connected to the auxiliary electrode 165 before the start of each process in accordance with the continuous etching process of the multilayer film in the same processing container. Thereby, the potential of the wall is adjusted to suppress the occurrence of fine particles or the adhesion of the film to the wall, and it is controlled that the wall does not excessively cut, and the deposit does not excessively adhere to the wall. In particular, in HARC (High Aspect Ratio Contact), a frequency of a low level of 2 MHz is used as a high frequency power for bias. Therefore, as shown in FIG. 2, when the high-frequency power applied to the lower electrode 110 is 500 W or less, there is a concern that the polymer adheres, and when the high-frequency power applied to the lower electrode 110 is l5 〇〇 W or more, There are concerns about the generation of particles. Therefore, it is preferable to switch the DC power source 130 and the potential adjustment high-frequency power source 140 based on the above power. In other words, when the high-frequency power applied from the bias-frequency local power supply 160 is 5 〇 OW or less, the high-frequency power is applied to the auxiliary electrode 165 by the potential-adjusting high-frequency power source 14 ,, and the high-frequency power is applied from the bias voltage. When the high-frequency power applied from the power source 160 is 1500 W or more, a DC voltage is applied to the auxiliary electrode 165 by the DC power source 130. Therefore, in the process of HARC, etc., even if the frequency of the low level of -21 · 201207932 2 MHz is used as the high-frequency power for the bias voltage, it is possible to control the wall to not excessively cut, and the deposit does not excessively adhere to wall. Further, when the high-frequency power applied from the bias high-frequency power source 160 is larger than 500 W by less than 15 〇〇W, there is no fear that particles are generated and the polymer adheres. Therefore, in this range, it is not necessary to apply electric power from the DC power source 130 and the potential adjustment high-frequency power source 140 to the auxiliary electrode 165. Further, the control of the application of the electric power of the DC power supply 130 and the potential adjustment high-frequency power supply 140 is based on the fact that the high-frequency power output from the high-frequency power source i 50 for plasma excitation is set to 200 W or more. <Second Embodiment> Next, the overall configuration of an etching apparatus according to a second embodiment of the present invention will be described with reference to Fig. 5 . In the etching apparatus 10 of the second embodiment, the connection between the DC power supply 130 and the potential adjustment high-frequency power source 140 and the upper electrode 105 electrode and the auxiliary electrode 165 is different from that of the first embodiment. Therefore, the description will be focused on the differences, and the description of the same configurations as those in the first embodiment will be omitted. The DC power supply 130 and the potential adjustment high-frequency power supply 140 of the present embodiment are connected not only to the auxiliary electrode 165 but also to the upper electrode 105. A switch 200 is provided between the DC power source 130 and the potential adjustment high-frequency power source 140 and the upper electrode 105. A switch 205 is provided between the DC power source 130 and the potential adjustment high frequency power source 140 and the auxiliary electrode 165. The switch 200 and the switch 205 switch between the auxiliary electrode 165 and the upper electrode 105 for the application of the frequency or DC voltage from the potential adjustment high frequency-22-201207932 power supply 140 or the direct current power supply 130 in accordance with the conditions of the respective etching processes. An example of the first switching mechanism. In the present embodiment, when a plurality of different etching processes for continuously performing the multilayer film structure in the processing container are performed, the power application from the potential adjusting high-frequency power source 140 or the DC power source 130 to the auxiliary electrode 165 is switched in accordance with the conditions of the respective etching processes. And electric power is applied from the potential adjustment high-frequency power source 140 or the DC power source 130 to the upper electrode 105. When the switch 205 is turned off and the switch 205 is turned on, the DC power supply 1380 and the potential adjustment high-frequency power supply 140 and the auxiliary electrode 165 are connected as in the first embodiment. Thereby, the DC power source 130 and the potential adjustment high-frequency power source 140 can be used to control the wall potential according to the process. On the other hand, when the switch 200 is turned on and the switch 205 is turned off, the DC power supply 130 and the potential adjustment high-frequency power source 140 are connected to the upper electrode 105. Thereby, the characteristics of the plasma or the surface state of the upper electrode 1 〇 5 can be controlled by the DC power source 130 and the potential adjustment high-frequency power source 144. For example, when high frequency power of 13.56 MHz or less is applied to the upper electrode 105 by the high frequency power supply 140 for potential adjustment, ions can be introduced to the upper electrode 105 without affecting the generated plasma. As a result, ions on the surface of the upper electrode 105 collide with the upper electrode 105 including the portion formed by the crucible, whereby the film can be prevented from accumulating on the upper electrode 105. When a DC voltage is applied from the DC power source 130 to the upper electrode 丨〇 5, ion attack to the upper electrode 105 is promoted, and accumulation of the polymer film to the upper electrode 105 can be suppressed. And once the DC voltage is applied from the DC power source 130 to the upper electrode
S -23- 201207932 105，則在上部電極1 05的表面附近是僅離子進入。因此 ’雖一旦電子碰撞上部電極105，則通常是消滅，但若施 加直流電壓，則電子不會接近上部電極105的表面附近， 所以可抑制在上部電極105的表面的電子消費。藉此，可 提高電漿密度。而且，一旦離子碰撞上部電極105的金屬 材料，則被放出二次電子。藉此，可朝晶圓 W照射電子 的射束，可助於晶圓W的加工。 以上，若根據本實施形態，則可在上部電極1 05與輔 助電極165之間切換來自直流電源130及電位調整用高頻 電源140的給電對象。藉此，當來自直流電源130及電位 調整用高頻電源140的給電對象爲輔助電極165時，與第 1實施形態同樣，可控制壁電位來防止壁切削及附著物往 壁堆積。另一方面，將來自直流電源130及電位調整用高 頻電源140的給電對象切換至上部電極105時，可利用直 流電源1 3 0及電位調整用高頻電源1 40來控制電漿的特性 或上部電極105的表面狀態。 另外，想要除去附著於上部電極105及壁雙方的膜時 ，是使開關200及開關205雙方開啓，對上部電極105及 輔助電極165的雙方施加直流電壓或高頻電力。 <第3實施形態> 其次，一邊參照圖6 —邊說明本發明的第3實施形態 的蝕刻裝置的全體構成。在第3實施形態的蝕刻裝置1〇 中，將施加於輔助電極165的高頻電力的供給源兼作爲對 -24- 201207932 下部電極110施加偏壓用的電壓的偏壓用高頻電源160使 用的點，與有別於偏壓用高頻電源1 60另外具備施加於輔 助電極165的高頻電力的供給源（電位調整用高頻電源 1 40 )之第1實施形態不同。因此，以該不同點爲中心進 行說明，有關與第1實施形態相同的構成則省略說明。 本實施形態是不存在第1實施形態的電位調整用高頻 電源140，只由連接至輔助電極165及下部電極110的偏 壓用高頻電源160所構成。在偏壓用高頻電源160與輔助 電極165之間設有開關300。開關300是第2切換機構的 —例，其係切換從偏壓用高頻電源160往輔助電極165的 高頻電力的施加、及從同一該高頻電源160往下部電極 110的高頻電力的施加。 本實施形態是在處理容器內連續實行多層膜構造的不 同的複數的蝕刻製程時，按照各鈾刻製程的條件來切換從 偏壓用高頻電源160往輔助電極165之電力的施加、及從 偏壓用高頻電源160往下部電極110之電力的施加。 若根據此，則一旦將開關3 00連接至輔助電極1 65側 ，偏壓用高頻電源160與輔助電極165會被連接。藉此， 可利用直流電源1 3 0及偏壓用高頻電源1 6 0來進行對應於 製程之壁電位的控制。 .另一方面，若將開關300連接至下部電極110側，則 偏壓用高頻電源160與下部電極110會被連接。藉此，可 利用偏壓用高頻電源160來控制往晶圓W之離子的引入 。此情況，直流電源130是被連接至輔助電極〗65，因此 -25- 201207932 亦可利用直流電源1 3 0來進行對應 〇 以上，若根據本實施形態，則藉 110與輔助電極165之間切換來自偏 給電對象，可只利用既存的偏壓用高 應於製程之壁電位的控制、及往晶匱 制。 <第4實施形態> 其次，一邊參照圖7 —邊說明本 的蝕刻裝置的全體構成。在第4實ί 中，將施加於輔助電極165的高頻電 下部電極110施加偏壓用的電壓的偏 用的點，與第3實施形態共通。但， 供給時的功率分配使用功率分配器（ 與使用開關300來切換供給對象的第 此，以該不同點爲中心進行說明，有 同的構成則省略說明。 在本實施形態是不存在電位調整 由被連接至輔助電極165及下部電極 源160所構成。在連接偏壓用高頻 1 6 5及下部電極1 1 〇的電源線設有功1 功率分配器400是將從偏壓用高 極165施加的電力及從偏壓用高頻賃 製程之壁電位的控制 由設置一在下部電極 壓用高頻電源160的 頻電源160來進行對 W之離子的引入控 發明的第4實施形態 担形態的蝕刻裝置 1 〇 力的供給源兼作爲對 壓用高頻電源160使 第4實施形態在電力 Splitter ) 400 的點， 3實施形態不同。因 關與第3實施形態相 用高頻電源14〇，只 110的偏壓用高頻電 電源 160、輔助電極 P分配器400。 頻電源160往輔助電 |源160往下部電極 -26- 201207932 110施加的電力分配成不同的功率。例如，在此，功率分 配器400是對下部電極110供給300W的LF功率，對輔 助電極165供給400W的LF功率。 以上’若根據本實施形態，則可從偏壓用高頻電源 160往下部電極11〇及輔助電極165功率分配而供給電力 。藉此’可只使用既存的偏壓用高頻電源160來同時進行 對應於製程之壁電位的控制、及往晶圓W之離子的引入 控制。 像以上說明那樣，可利用上述各實施形態的蝕刻裝置 10來實行本實施形態的電漿處理方法。藉此，在多層膜 構造的總括蝕刻中，即使在同一處理容器內實行高頻的功 率非常低的條件及非常高的條件的連續步驟，照樣可藉由 調整機構的位置調節來控制成壁不會過度切削，且堆積物 不會過度附著於壁的狀態。此結果，可降低微粒或處理容 器內的污染問題、零件的消耗問題、記憶效應的問題。 以上，一邊參照附圖一邊詳細說明有關本發明的較佳 實施形態’當然本發明並非限於該例。只要是具有本發明 所屬的技術領域的通常知識者，便可在申請專利範圍所記 載的技術思想的範疇內思及各種的變更例或修正例，該等 當然亦屬於本發明的技術範圍。 例如’本發明的電漿處理裝置亦可具有未圖示的第3 切換機構，其係切換從直流電源130往輔助電極165之直 流電壓的施加及從電位調整用高頻電源140往輔助電極 I65之高頻電力的施加。又，亦可替代第3切換機構，在S -23- 201207932 105, only ions enter in the vicinity of the surface of the upper electrode 105. Therefore, when the electrons collide with the upper electrode 105, they are usually destroyed. However, when a DC voltage is applied, electrons do not approach the vicinity of the surface of the upper electrode 105, so that electron consumption on the surface of the upper electrode 105 can be suppressed. Thereby, the plasma density can be increased. Further, once the ions collide with the metal material of the upper electrode 105, secondary electrons are emitted. Thereby, the beam of electrons can be irradiated toward the wafer W, which can facilitate the processing of the wafer W. As described above, according to the present embodiment, the power supply target from the DC power source 130 and the potential adjustment high-frequency power source 140 can be switched between the upper electrode 105 and the auxiliary electrode 165. As a result, when the power supply target from the DC power source 130 and the potential adjustment high-frequency power source 140 is the auxiliary electrode 165, as in the first embodiment, the wall potential can be controlled to prevent wall cutting and deposits from accumulating. On the other hand, when the power supply target from the DC power supply 130 and the potential adjustment high-frequency power supply 140 is switched to the upper electrode 105, the characteristics of the plasma can be controlled by the DC power supply 130 and the potential adjustment high-frequency power supply 140. The surface state of the upper electrode 105. Further, when it is desired to remove the film adhering to both the upper electrode 105 and the wall, both the switch 200 and the switch 205 are turned on, and a DC voltage or a high-frequency power is applied to both the upper electrode 105 and the auxiliary electrode 165. <Third Embodiment> Next, the overall configuration of the etching apparatus according to the third embodiment of the present invention will be described with reference to Fig. 6 . In the etching apparatus 1A of the third embodiment, the supply source of the high-frequency power applied to the auxiliary electrode 165 is also used as the bias high-frequency power source 160 for applying a voltage for biasing the lower electrode 110 of the-24-201207932. The point of the first embodiment differs from the first embodiment in which the bias high frequency power supply 160 is provided with a high frequency power supply (potential adjustment high frequency power supply 1 40) applied to the auxiliary electrode 165. Therefore, the description will be focused on the differences, and the description of the same configurations as those in the first embodiment will be omitted. In the present embodiment, the potential adjustment high-frequency power source 140 of the first embodiment is not provided, and only the high-frequency power source 160 for bias voltage is connected to the auxiliary electrode 165 and the lower electrode 110. A switch 300 is provided between the bias high frequency power source 160 and the auxiliary electrode 165. The switch 300 is an example of a second switching mechanism that switches the application of high-frequency power from the bias high-frequency power source 160 to the auxiliary electrode 165 and the high-frequency power from the same high-frequency power source 160 to the lower electrode 110. Apply. In the present embodiment, when a plurality of different etching processes for continuously performing the multilayer film structure in the processing container are performed, the application of electric power from the bias high-frequency power source 160 to the auxiliary electrode 165 is switched in accordance with the conditions of the uranium engraving process. The application of the power of the high frequency power source 160 to the lower electrode 110 is biased. According to this, once the switch 300 is connected to the auxiliary electrode 1 65 side, the bias high frequency power supply 160 and the auxiliary electrode 165 are connected. Thereby, the DC power source 130 and the bias high-frequency power source 160 can be used to control the wall potential corresponding to the process. On the other hand, if the switch 300 is connected to the lower electrode 110 side, the bias high frequency power source 160 and the lower electrode 110 are connected. Thereby, the introduction of ions to the wafer W can be controlled by the bias high frequency power source 160. In this case, the DC power source 130 is connected to the auxiliary electrode 165. Therefore, the -25-201207932 can also be used for the corresponding 〇 or more by the DC power supply 130. According to the present embodiment, the switch 110 and the auxiliary electrode 165 are switched. From the biased power supply, it is possible to use only the existing bias voltage to control the wall potential which is high in the process, and to make it into the crystal. <Fourth Embodiment> Next, the overall configuration of the etching apparatus will be described with reference to Fig. 7 . In the fourth embodiment, the point at which the bias voltage is applied to the high-frequency electric lower electrode 110 applied to the auxiliary electrode 165 is common to the third embodiment. However, in the power distribution at the time of supply, the power splitter is used. (The same as the first use of the switch 300 to switch the supply target, the description will be omitted. The same configuration is omitted. In the present embodiment, there is no potential adjustment. It is connected to the auxiliary electrode 165 and the lower electrode source 160. The power supply line for connecting the bias high frequency 165 and the lower electrode 1 1 设有 is provided with a power 1 power divider 400 is a high pole 165 for biasing. The electric power to be applied and the control of the wall potential of the high-frequency tempering process by the bias voltage are provided by the frequency power supply 160 of the high-frequency power supply 160 for the lower electrode pressure, and the fourth embodiment of the invention is introduced. In the etching apparatus 1 , the supply source of the force is also used as the high-frequency power source 160 for pressing, and the fourth embodiment is different in the power splitter 400. The high-frequency power source 160 for bias voltage 110 and the auxiliary electrode P distributor 400 of 110 are used in combination with the high-frequency power source 14 of the third embodiment. The frequency power supply 160 is directed to the auxiliary power source 160 to the lower electrode -26-201207932 110 The applied power is distributed to different powers. For example, here, the power distributor 400 supplies 300 W of LF power to the lower electrode 110 and 400 W of LF power to the auxiliary electrode 165. According to the present embodiment, power can be supplied from the bias high-frequency power source 160 to the lower electrode 11A and the auxiliary electrode 165 by power distribution. Thereby, only the existing high-frequency power source 160 for bias voltage can be used to simultaneously control the wall potential corresponding to the process and the introduction control of ions to the wafer W. As described above, the plasma processing method of the present embodiment can be carried out by the etching apparatus 10 of each of the above embodiments. Thereby, in the collective etching of the multilayer film structure, even if a high-frequency power very low condition and a very high-condition continuous step are performed in the same processing container, the position adjustment of the adjustment mechanism can be controlled to control the wall formation. It will be excessively cut and the deposit will not be excessively attached to the wall. As a result, the problem of contamination in the particles or the processing container, the consumption of the parts, and the memory effect can be reduced. The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings. The present invention is not limited to the examples. As long as it is a person having ordinary skill in the art to which the present invention pertains, various modifications and alterations can be made within the scope of the technical idea of the patent application, and these are of course also within the technical scope of the present invention. For example, the plasma processing apparatus of the present invention may have a third switching mechanism (not shown) that switches the application of the DC voltage from the DC power source 130 to the auxiliary electrode 165 and the potential adjustment high-frequency power source 140 to the auxiliary electrode I65. The application of high frequency power. Also, instead of the third switching mechanism,
S -27- 201207932 直流電源1 3 0的下游側及整合器1 3 5的下游側設置 的濾波器。 並且，本發明的電漿處理裝置是在直流電源1 位調整用高頻電源140連接有未圖示的控制部。由 源130或電位調整用高頻電源140的哪個施加電力 電極1 6 5是藉由控制部來控制。而且，控制部也被 圖5的開關200，205(第1切換機構）或圖6的， (第2切換機構）或未圖示的第3切換機構或圖7 功率分配器400，控制各切換機構的切換，或功率 比率》 一般，平行平板型電漿處理裝置是在壓力爲 以下的製程時，全體產生電漿。另一方面，在 lOOmT以上的製程時，在施加的側產生電漿。因此 部電極或下部電極的其中任一施加電漿激發用的高 時，特別是在壓力爲l〇〇mT以上的製程，在所被 電極側附近產生電槳。因此，有時在上部電極施加 發用的高頻電力，較能夠藉由往各實施形態的輔助 加電力來更有效地控制壁的切削及堆積物往壁的附 另一方面，亦有時以所被產生的電漿不會亂的 下部電極施加電漿激發用的高頻電力較容易發揮上 施形態的效果。 藉由本發明的電漿處理裝置來電漿處理的被處 非限於矽晶圓，亦可爲FPD( Flat Panel Display) 或太陽電池用基板等。 未圖示 3 0或電 直流電 至輔助 連接至 ，關 300 所示的 分配的 lOOmT 壓力爲 ，對上 頻電力 施加的 電漿激 電極施 著。 方式對 述各實 理體並 用基板 -28- 201207932 【圖式簡單說明】 圖1是表示本發明的第1實施形態的鈾刻裝置的全體 構成的縱剖面圖。 圖2是表示LF功率與離子能量的關係圖表。 圖3是表示直流電壓與壁的電位的關係圖表。 圖4是用以說明利用第1實施形態的蝕刻裝置之多層 膜構造的連續触刻。 圖5是表示本發明的第2實施形態的蝕刻裝置的全體 構成的縱剖面圖。 圖6是用以說明開關之電力供給的切換。 圖7是用以說明功率分配器之電力供給的分配。 圖8是用以說明在電漿處理空間的電位的狀態。 【主要元件符號說明】S -27- 201207932 Filter provided on the downstream side of the DC power supply 130 and the downstream side of the integrator 1 3 5 . Further, in the plasma processing apparatus of the present invention, a control unit (not shown) is connected to the high-frequency power source 140 for DC power supply adjustment. Which of the source 130 or the potential adjustment high-frequency power source 140 is applied with the power electrode 165 is controlled by the control unit. Further, the control unit is also controlled by the switches 200, 205 (first switching means) of FIG. 5 or the (second switching means) of FIG. 6, or the third switching means (not shown) or the power distributor 400 of FIG. Switching of the mechanism, or power ratio" Generally, the parallel plate type plasma processing apparatus generates plasma in the whole process under the pressure of the following. On the other hand, at a process of more than 100 mT, plasma is generated on the applied side. Therefore, when any of the partial electrodes or the lower electrodes is applied with a high plasma excitation, particularly in a process in which the pressure is l〇〇mT or more, an electric paddle is generated in the vicinity of the electrode side. Therefore, in some cases, the high-frequency power for the application is applied to the upper electrode, and the cutting of the wall and the deposition of the deposit to the wall can be more effectively controlled by the auxiliary power supply of each embodiment. It is easier for the high-frequency power for plasma excitation to be applied to the lower electrode where the generated plasma is not disturbed, and the effect of the above-described configuration is more easily exhibited. The apparatus for processing the slurry by the plasma processing apparatus of the present invention is not limited to the tantalum wafer, and may be an FPD (Flat Panel Display) or a substrate for a solar cell. The unillustrated 30 or electric DC to auxiliary connection to the off-line 300 shows the assigned lOOmT pressure applied to the plasmon electrode applied to the upper frequency power. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; Fig. 2 is a graph showing the relationship between LF power and ion energy. Fig. 3 is a graph showing the relationship between the DC voltage and the potential of the wall. Fig. 4 is a view showing the continuous lithography of the multilayer film structure using the etching apparatus of the first embodiment. Fig. 5 is a longitudinal sectional view showing the entire configuration of an etching apparatus according to a second embodiment of the present invention. Fig. 6 is a diagram for explaining switching of power supply of a switch. Figure 7 is a diagram for explaining the distribution of power supply to the power splitter. Fig. 8 is a view for explaining the state of the potential in the plasma processing space. [Main component symbol description]
10 :電漿處理裝置 40: SiOJ 5 〇 :非晶形碳膜 6 0 ·· Si ON 膜 70 :反射防止膜（B ARC ) 8〇 :光阻劑膜 100 :處理容器 105 :上部電極 1 1〇 :下部電極 •29- 201207932 120 :載置 1 3 0 :直流 1 4 0 :電位 1 50 :電漿 1 6 0 :偏壓 165 :輔助 200 、 205 、 400 :功率 U :電漿處 台 電源 調整用高頻電源 激發用高頻電源 用局頻電源 電極 300 :開關 分配器 理空間 -30-10: plasma processing apparatus 40: SiOJ 5 〇: amorphous carbon film 6 0 · · Si ON film 70: anti-reflection film (B ARC ) 8 〇: photoresist film 100 : processing container 105 : upper electrode 1 1 〇 : Lower electrode • 29- 201207932 120 : Mounting 1 3 0 : DC 1 4 0 : Potential 1 50 : Plasma 1 6 0 : Bias 165 : Auxiliary 200 , 205 , 400 : Power U : Plasma power supply adjustment Use high frequency power supply to excite high frequency power supply with local frequency power supply electrode 300: switch distributor space -30-