201205800 “…J194 35185twf.doc/n 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種有機發光裝置之畫素結構。 【先前技術】 資訊通訊產業已成為現今的主流產業，特別是可攜帶 式的各種通訊顯示產品更是發展的重點。而由於平面顯示 器是人與資訊之間的溝通界面，因此其發展顯得特別重 要。有機發光顯示器即疋一種有機發光裝置，由於其具有 自發光、廣視角、省電、程序簡易、低成本、操作溫&廣 泛、高應答速度以及全彩化等等的優點，使其具有極大的 潛力，因此可望成為下一代平面顯示器之主流。 另外，透明顯示面板的技術也已經在積極發展之中。 -般，在透财機發光顯示器中，大K利用具有高 率的材質作為陽極以及陰極的材料，甚至將顯示器 有金屬層《成高穿透度㈣。此歡計雖然可以提 不面板的透明度’但是因為有機發絲示 作 為共振腔結構，因岐㈣致發絲 進 色表現不佳。 R進而w成顏 【發明内容】 以提有機發光裝置之晝素結構，其不作可 明度’還可以增加其發光亮度 本發月Μ—種有機發光裝置之晝素結構’其包括基 201205800 AU1004194 35185twf.doc/n 板、至少一主動元件、第一絕緣層、第一電極層、第二絕 .緣層、發光層以及第二電極層。基板具有多個子晝素區， 且母一個子畫素區具有發光區以及透明區。主動元件位於 基板之發光區内。第一絕緣層覆蓋主動元件，其中苐一絕 緣層位於發光區内且未設置在透明區内。第一電極層位於 第一絕緣層上且與主動元件電性連接，其中第一電極層位 於發光區内且未設置在透明區内。第二絶緣層位在第一絕 • 緣層以及第一電極層上且暴露出第一電極層，其中第二絕 緣層位於發光區内且未設置在透明區内。發光層位於被暴 露出的第一電極層上，其中發光層位於發光區内且未設置 在透明區内。第二電極層位於發光層上。 本發明提出一種有機發光裝置之畫素結構，其包括基 板、至少一主動元件、第一絕緣層、第一電極層、第二絕 緣層、發光層以及第二電極層。基板具有多個子晝素區， 且每一個子晝素區具有發光區以及透明區。主動元件位於 • 基板之發光區内。第一絕緣層覆蓋主動元件，其中第一絕 緣層中具有至少-第_開口以暴露出基板之透明區。第一 電極層位於發光區内，其中第一電極層設置於第一絕緣層 上且與主動元件電性連接。第二絕緣層位在第一絕緣層以 及第-電極層上且暴露出第一電極層，其中第二絕緣層中 二有至/第―開口以暴露出第_開口。發光層位於發光 區内’其中發光層設置於被暴露出的第 電極層設置於發光層上。 曰 第一 基於上述，由於本發明將晝素結構之透明區中的膜層 201205800 ------1194 35185twf.doc/n 移除，因而可以使畫素結構的透明度提昇。此外，本發明 將畫素結構的電極層以及發光層都設置在發光區中，且此 發光區中可以設置不透光材料，因而可以使有機發光裝置 保有共振腔結構，進而使有機發光裝置的發光亮度提昇。 為讓本發明之上述特徵和優點能更明顯易懂，下文存寺 舉實施例，並配合所附圖式作詳細說明如下。 【實施方式】 圖1是根據本發明一實施例之有機發光裝置之晝素蚌 構的剖面示意圖。圖2是圖1之畫素結構之局部上&示^ 圖。為了清楚的說明本實施例，圖2僅繪示出圖1之書^ 結構中之主動元件、第一電極層以及與主動元件電性&接 的訊號線’並省略繪示發光層以及第二電極層。 請參照圖1及圖2，本實施例之有機發光裝置之 結構包括基板100、至少一主動元件T1，T2、 思 1〇6、第-電極層1〇8、第二絕緣層11〇、發光層二 第二電極層114。 及 ^板刚之材質可為玻璃、石英、有機聚合物、 不透光/反射材料(例如：導電材料、 一 或其它可的㈣）、或是其它 施例，在基板100之表面上可進 ¥材料°根據本實 可防止基板_中的離子或置緩衝層⑻，其 之元件之中。緩衝層101 成在基板W。上 氮氧化石夕、其它合適的益機材料疋化石夕、氮化石夕、 機糾、或上述至少二種材料的 201205800 AU1004194 35185twf.doc/n 堆疊層。在本實施例中，緩衝層101是覆蓋基板100之發 光區E以及透明區T。 基板100具有多個子晝素區P，且每一個子畫素區P 具有發光區E以及透明區τ。在本實施例中，每一子晝素 區P内的發光區E以及透明區T是分別設置在子晝素區p 的上部以及下部。但是，本發明不限於此。根據其他實施 例’每一子畫素區P内的發光區E以及透明區T的排列方 式可以是其他種形式，例如發光區E位於子晝素區p的中 央且透明區T位於子晝素區的兩側或周圍。類似地，本發 明也不限制每一子晝素區P内之發光區E與透明區τ的數 目。換言之，在每一子晝素區P内可以有一個或一個以上 的發光區E以及一個或一個以上的透明區τ。 主動元件Tl，T2位於基板1〇〇之發光區e内。根據本 實施例，主動元件Tl，T2更進一步與訊號線(掃描線Sl、 資料線DL及電源線PL)電性連接。此外，在本實施例中， 所述晝素結構更包括電容器C。在本實施例中，主動元件 ΤΙ、T2是以頂部閘極型薄膜電晶體（又可稱為多晶矽薄膜 電晶體）為例來說明。 主動7L件T1具有閘極G1、源極si、汲極D1以及通 道CH1。主動元件T1之閘極G1與掃描線化電性連接。 主動兀件τι之絲μ、祕D1以及通道cm是形成在 -半導體層（多轉層）中。在上述半導體層與閘極⑴之間 夹有-層閘_:緣層1G2,且在閘極⑴上另覆蓋有一層絕 緣層104。源極S1透過形成在絕緣層1〇2、1〇4中的接觸 201205800^ 35185twf.doc/n 窗VI而與源極金屬層SM1電性連接，源極金屬層SM1 更進一步與資料線DL電性連接。沒極D1透過形成在絕 緣層102、104中的接觸窗V2而與汲極金屬層疆電性 連接。 主動元件T2具有閘極〇2、源極S2、汲極D2以及通 道CH2主動元件T2之源極S2、汲極D2以及通道CH2 是形成在-半導體層(例如：非㈣、多晶$、微料、單 晶石夕、銦錯辞氧化物、銦錄氧化物、銦辞氧化物、錯石夕化 合物、或其它合適的材料、或上述之組合，其中，以多晶 石夕層為範例）中。類似地’在上述半導體層與陳G2之間 夾有一層閘極絕緣層1 〇 2 ’且在閘極G2上覆蓋有一層絕緣 層1〇4。源極S2透過形成在絕緣層1〇4、1〇2中的接觸窗 V3而與源極金屬層SM2電性連接，汲極D2透過形成在 絕緣層104、102中的接觸窗V4而與汲極金屬層DM2電 性連接。此外，源極金屬層SM2又與汲極金屬層DM1電 性連接。根據本實施例，主動元件T2的閘極G2是與主動 元件T1的汲極r>2(汲極金屬層DM2)電性連接，主動元件 T2的源極幻(源極金屬層SM2)是與電源線pl電性連接。 值得一提的是，上述絕緣層102、104都僅設置在發 光區E内而未設置於透明區τ内。因此絕緣層1〇2、1〇4 在透明區T具有至少一開口（未標示出），以暴露出緩衝層 1(M。 電谷器C的電容電極E1是與主動元件τΐ的沒極D1 電性連接。電容器C的電容電極E2是與電源供應線PL電 201205800 AU1004194 35185twf.d〇c/n 性連接。 在本實施例中是以兩個主動元件搭配一個電容器 (2T1C)為例來說明，但並非用以限定本發明。換言之，本 發明不限每一子晝素區域p内的主動元件與電容器的個 數。 第一絕緣層106覆蓋主動元件T1，T2，其中第一絕緣 層106位於發光區ε内且未設置在透明區τ内。根據本發 • 明之一實施例’第一絕緣層106是覆蓋主動元件Τ1，Τ2以 及上述之訊號線，而且第一絕緣層1〇6中具有至少一第一 —開口 01(如圖1所示）以暴露出基板1〇〇之透明區Τ。更詳 細來說，第一開口 01與絕緣層1〇2、1〇4中的開口共同暴 露出緩衝層101。 第一電極層108位於第一絕緣層1〇6上且與主動元件 Τ2電性連接。更詳細來說，第一電極層1〇8是透過形成在 第一絕緣層106中的接觸窗V5而與主動元件Τ2之汲極 φ D2(汲極金屬層DM2)電性連接。特別是，上述之第一電極 層108是位於發光E區内.且未設置在透明區τ内。 根據本實施例，第一電極層1〇8較佳的是具有反射性 質之電極層。第-電極層108可以單獨由—層反射電極層 所構成，或者是由多層導電層108a/108b所構成(如圖】所 示）。在圖1之實施例中，第一電極層108之上層電極1〇8a 為透明材料層且下層電極l〇8b為反射材料層。當然，在其 他實施例中，亦可以是第一電極層1〇8之上層電極1〇8& 為反射材料層且下層電極l〇8b是透明材料層。 201205800 Λ94 35185twf.doc/n201205800 "...J194 35185twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a pixel structure of an organic light-emitting device. [Prior Art] The information communication industry has become a mainstream industry today, particularly It is a portable communication display product that is the focus of development. Since the flat panel display is the communication interface between people and information, its development is particularly important. The organic light-emitting display is an organic light-emitting device because it has its own The advantages of illuminating, wide viewing angle, power saving, simple program, low cost, operating temperature & wide range, high response speed and full coloring make it have great potential, so it is expected to become the mainstream of next-generation flat panel display. In addition, the technology of transparent display panels has also been actively developed. - In general, in the light-emitting device, the large K uses a material with a high rate as the material of the anode and the cathode, and even the metal layer of the display is "high". Penetration (four). Although this joy can not mention the transparency of the panel 'but because of the organic hairline For the structure of the resonant cavity, the hair color of the 岐(4) is not good. R and w become the face of the invention. [Inventive content] To improve the luminescence of the organic light-emitting device, it can increase the brightness of the light. A halogen structure of an organic light-emitting device comprising a base 201205800 AU1004194 35185twf.doc/n board, at least one active component, a first insulating layer, a first electrode layer, a second insulating layer, a light emitting layer, and a second The electrode layer has a plurality of sub-quartel regions, and the parent sub-pixel region has a light-emitting region and a transparent region. The active component is located in the light-emitting region of the substrate. The first insulating layer covers the active component, wherein the first insulating layer is located in the light-emitting region The first electrode layer is located on the first insulating layer and is electrically connected to the active device, wherein the first electrode layer is located in the light emitting region and is not disposed in the transparent region. The second insulating layer is located in the transparent region. a first insulating layer and a first electrode layer and exposing the first electrode layer, wherein the second insulating layer is located in the light emitting region and is not disposed in the transparent region. The light emitting layer is located at the first exposed On the pole layer, wherein the light emitting layer is located in the light emitting region and is not disposed in the transparent region. The second electrode layer is located on the light emitting layer. The invention provides a pixel structure of the organic light emitting device, which comprises a substrate, at least one active component, and An insulating layer, a first electrode layer, a second insulating layer, a light emitting layer and a second electrode layer. The substrate has a plurality of sub-tenox regions, and each of the sub-tenox regions has a light-emitting region and a transparent region. The active device is located on the substrate a first insulating layer covering the active device, wherein the first insulating layer has at least a first opening to expose a transparent region of the substrate. The first electrode layer is located in the light emitting region, wherein the first electrode layer is disposed in the first region An insulating layer is electrically connected to the active device. The second insulating layer is on the first insulating layer and the first electrode layer and exposes the first electrode layer, wherein the second insulating layer has a to/first opening to expose Exit the _ opening. The luminescent layer is located in the illuminating region ‘where the luminescent layer is disposed on the exposed first electrode layer disposed on the luminescent layer.曰 First Based on the above, since the present invention removes the film layer 201205800 ------1194 35185 twf.doc/n in the transparent region of the halogen structure, the transparency of the pixel structure can be improved. In addition, in the present invention, the electrode layer and the luminescent layer of the pixel structure are disposed in the illuminating region, and the opaque material can be disposed in the illuminating region, so that the organic illuminating device can maintain the resonant cavity structure, thereby making the organic illuminating device The brightness of the light is increased. The above described features and advantages of the present invention will become more apparent and understood. [Embodiment] FIG. 1 is a schematic cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention. Figure 2 is a partial & diagram of the pixel structure of Figure 1. In order to clearly illustrate the present embodiment, FIG. 2 only shows the active device, the first electrode layer, and the signal line connected to the active device in the structure of FIG. 1 and omits the luminescent layer and the Two electrode layers. Referring to FIG. 1 and FIG. 2, the structure of the organic light-emitting device of the present embodiment includes a substrate 100, at least one active device T1, T2, a first electrode, a first electrode layer, a second insulating layer, and a light-emitting layer. Layer 2 second electrode layer 114. And the material of the plate can be glass, quartz, organic polymer, opaque/reflective material (for example: conductive material, one or other (4)), or other embodiments, which can be advanced on the surface of the substrate 100. ¥Material° According to this, it is possible to prevent ions in the substrate _ or to place the buffer layer (8) among the components. The buffer layer 101 is formed on the substrate W. A layer of 201205800 AU1004194 35185twf.doc/n of at least two materials of the above-mentioned nitrogen oxides, other suitable prosperous materials, fossilized fossils, cerium nitride, machine correction, or at least two of the above materials. In the present embodiment, the buffer layer 101 covers the light-emitting region E of the substrate 100 and the transparent region T. The substrate 100 has a plurality of sub-tenk regions P, and each of the sub-pixel regions P has a light-emitting region E and a transparent region τ. In the present embodiment, the light-emitting area E and the transparent area T in each sub-tend region P are respectively disposed at the upper portion and the lower portion of the sub-tend region p. However, the invention is not limited thereto. According to other embodiments, the arrangement of the light-emitting region E and the transparent region T in each sub-pixel region P may be other forms, for example, the light-emitting region E is located at the center of the sub-tenk region p and the transparent region T is located at the sub-small element. On either side or around the area. Similarly, the present invention does not limit the number of light-emitting regions E and transparent regions τ in each sub-tenk region P. In other words, there may be one or more illuminating regions E and one or more transparent regions τ in each sub-tend region P. The active elements T1, T2 are located in the light-emitting area e of the substrate 1〇〇. According to this embodiment, the active devices T1, T2 are further electrically connected to the signal lines (the scan line S1, the data line DL, and the power line PL). Further, in the embodiment, the halogen structure further includes a capacitor C. In the present embodiment, the active devices ΤΙ, T2 are exemplified by a top gate type thin film transistor (also referred to as a polycrystalline germanium thin film transistor). The active 7L piece T1 has a gate G1, a source si, a drain D1, and a channel CH1. The gate G1 of the active device T1 is electrically connected to the scan line. The active element τι wire μ, the secret D1 and the channel cm are formed in the - semiconductor layer (multi-layer). A layer gate _: edge layer 1G2 is interposed between the semiconductor layer and the gate electrode (1), and an insulating layer 104 is additionally covered on the gate electrode (1). The source S1 is electrically connected to the source metal layer SM1 through the contact 201205800^35185twf.doc/n window VI formed in the insulating layer 1〇2, 1〇4, and the source metal layer SM1 is further electrically connected to the data line DL. Sexual connection. The gate D1 is electrically connected to the gate metal layer through the contact window V2 formed in the insulating layers 102, 104. The active device T2 has a gate 〇2, a source S2, a drain D2, and a source S2 of the active device T2 of the channel CH2, and a drain electrode D2 and a channel CH2 are formed on the semiconductor layer (for example, non-tetra), polycrystalline $, micro Material, single crystal, indium oxide, indium oxide, indium oxide, stellite compound, or other suitable material, or a combination thereof, wherein the polycrystalline layer is taken as an example) in. Similarly, a gate insulating layer 1 〇 2 ' is sandwiched between the above semiconductor layer and Chen G2 and an insulating layer 1 〇 4 is covered on the gate G2. The source S2 is electrically connected to the source metal layer SM2 through the contact window V3 formed in the insulating layers 1〇4 and 1〇2, and the drain D2 is transmitted through the contact window V4 formed in the insulating layers 104 and 102. The electrode metal layer DM2 is electrically connected. Further, the source metal layer SM2 is electrically connected to the gate metal layer DM1. According to this embodiment, the gate G2 of the active device T2 is electrically connected to the drain r>2 (the drain metal layer DM2) of the active device T1, and the source phantom (source metal layer SM2) of the active device T2 is The power cord pl is electrically connected. It is worth mentioning that the above insulating layers 102, 104 are disposed only in the light-emitting region E and are not disposed in the transparent region τ. Therefore, the insulating layers 1〇2, 1〇4 have at least one opening (not shown) in the transparent region T to expose the buffer layer 1 (M. The capacitance electrode E1 of the electric grid C is a dipole D1 with the active element τΐ The capacitor electrode E2 of the capacitor C is connected to the power supply line PL201205800 AU1004194 35185twf.d〇c/n. In this embodiment, two active components are combined with a capacitor (2T1C) as an example. However, the present invention is not limited to the number of active elements and capacitors in each sub-tend region p. The first insulating layer 106 covers the active elements T1, T2, wherein the first insulating layer 106 Located in the light-emitting region ε and not disposed in the transparent region τ. According to an embodiment of the present invention, the first insulating layer 106 covers the active device Τ1, Τ2 and the above-mentioned signal line, and the first insulating layer 1〇6 There is at least one first opening 01 (shown in Figure 1) to expose the transparent region of the substrate 1 Τ. In more detail, the first opening 01 is common to the openings in the insulating layers 1 〇 2, 1 〇 4 The buffer layer 101 is exposed. The first electrode layer 108 is located at the first The insulating layer 1〇6 is electrically connected to the active device Τ2. In more detail, the first electrode layer 1〇8 is transmitted through the contact window V5 formed in the first insulating layer 106 and the drain of the active device Τ2. D2 (dip metal layer DM2) is electrically connected. In particular, the first electrode layer 108 is located in the light-emitting E region and is not disposed in the transparent region τ. According to the embodiment, the first electrode layer 1〇8 Preferably, the electrode layer has a reflective property. The first electrode layer 108 may be composed of a layer of a reflective electrode layer alone or a plurality of conductive layers 108a/108b (as shown in the figure). In the embodiment, the upper electrode 1〇8a of the first electrode layer 108 is a transparent material layer and the lower layer electrode 8〇8b is a reflective material layer. Of course, in other embodiments, the first electrode layer 1〇8 may also be a layer above. The electrode 1〇8& is a reflective material layer and the lower electrode l8b is a transparent material layer. 201205800 Λ94 35185twf.doc/n
第二絕緣層110是位在第一絕緣層106以及第一電極 層108上且暴露出第一電極層1〇8，其中第二絕緣層11〇 位於發光區E内且未設置在透明區丁内。在本實施例中， 第二絕緣層110是作為後續欲於第一電極層1〇8上所形成 的發光層112之阻隔結構，換言之，所形成之第二絕緣層 110可以限制發光層U2形成在特定的位置（即被暴露 -電極層108絲面上）。在本實施例+，第二絕緣層11〇 具有至少-第二開σ 〇2，第二開口 〇2暴露出第一開口 〇1。更詳細來說，第二開口 〇2、第—開口 〇1與絕緣層 102、1〇4中的開口共同暴露出緩衝層1〇1。The second insulating layer 110 is located on the first insulating layer 106 and the first electrode layer 108 and exposes the first electrode layer 1 〇 8 , wherein the second insulating layer 11 〇 is located in the illuminating region E and is not disposed in the transparent region Inside. In this embodiment, the second insulating layer 110 is a barrier structure for the subsequent luminescent layer 112 formed on the first electrode layer 1 , 8. In other words, the formed second insulating layer 110 can restrict the formation of the luminescent layer U2. At a specific location (ie, exposed - electrode layer 108 on the silk surface). In the present embodiment +, the second insulating layer 11A has at least - a second opening σ 〇 2, and the second opening 〇 2 exposes the first opening 〇1. In more detail, the second opening 〇2, the first opening 〇1 and the openings in the insulating layers 102, 1〇4 together expose the buffer layer 〇1.
货尤層u2位於被暴露出的第一電極層上，其 發光層112位於發光區Ε内且未設置在透明區τ内發光 112可為紅色有機發光圖案、綠色有機發光圖案、藍色 機發光@案或是混合各頻譜的光產生的不同顏色(例 白、橘、紫、…等)發光圖案。此外，發光層U2中可更 括電子傳輸層、電子注人層、電洞傳輸層以及電洞注入 (未繪示）’以增進發光層112的發光效率。 > 第二電極層114是位於發光層U2上。在本 中’第二電極層114是位於發光區Ε内且未設 :The material layer u2 is located on the exposed first electrode layer, and the light emitting layer 112 is located in the light emitting area 且 and is not disposed in the transparent area τ. The light emitting 112 may be a red organic light emitting pattern, a green organic light emitting pattern, or a blue machine light emitting. The @ case is a light-emitting pattern of different colors (such as white, orange, purple, etc.) produced by mixing the light of each spectrum. In addition, an electron transport layer, an electron injection layer, a hole transport layer, and a hole injection (not shown) may be further included in the light-emitting layer U2 to enhance the light-emitting efficiency of the light-emitting layer 112. > The second electrode layer 114 is located on the light-emitting layer U2. In the present invention, the second electrode layer 114 is located in the light-emitting region 且 and is not provided:
外，第二電極層112為透明電極層，其材^ 疋金屬氧化物或是薄層金屬之疊層。因此，本 J ^置/以頂部發光結構(或稱為向上發紐構），艮 H為反射材科所構成，而第二電極層為透明_ 冓成’為主要實施範例。而底部發光結構(或向下發光為 10 201205800 AU1004194 35185twf.d〇c/n 構）’即第一電極層為透明材料所構成，而第二電極層為反 射材料所構成，並不適用於本發明中。因為，發光區，例 如·位於主動元件區中’底部發光結構中發光層所發射的 光會被主動元件區中主動元件的不透光電極(例如 :閘極、 源極、汲極、掃描線、資料線、電容電極等等)所遮蔽，而 沒有任何的光線存在。 值得一提的是，在上述晝素結構之訊號線上(例如：掃 # ，SL、資料線DL、電源線Pl其中至少一者)以及/或電 各器C上亦可設置第一電極層108、發光層112以及第二 電極層114。也就是發光區E可涵蓋設置有訊號線(例如： =描線SL、資料線、電源線pL其中至少一者)以及/ 或電各器C之處。由於上述設置有訊號線以及電容器的地 方原本就不透光’因此將發光區E涵蓋到設置有訊號線以 及電谷器C之處，可進一步增加晝素結構的發光面積。 、在上述圖1之實施例中，第一電極層1〇8、發光層112 # 以f第二電極層114是設置在發光區E内，因此每一子畫 素區p是發光區E會發出光線，.而透明區τ是不會發出光 線。然’因透明區τ内幾乎沒有設置膜層’因此透明T可 有高度的透明度。如此，可以使得晝素結構的透明度 提昇。此外，因本實施例將第一電極層1〇8、發光層112 以^第二電極層114是設置在發光區£。而發光區E可以 不需對晝素結構的透明度做出貢獻。因此第一電極層1〇8 可以選用具有高反射性質之材料，以使晝素結構保有共振 腔結構’進而使有機發光裝置之晝素結構的發光亮度提昇。 201205 800194 35185twf.doc/n 在圖1之實施例中，第二電極層114僅設置在發光區 E而沒有設置在透明區T中。然，根據其他實施例，第二 電極層114可以設置在發光區e以及透明區T中，如圖3 所示。圖3之實施例與圖1之實施例相似，因此在此與圖 1之實施例相同的元件以相同的符號表示，且不再重複贅 述。圖3之實施例與圖1之實施例不相同之處在於，第二 電極層114位於發光區E内以及透明區T内，且位於發光 區E内的第二電極層114與位於透明區T的第二電極層 114，較佳地’是分離開來。於其它實施例中，第二電極層 114位於發光區E内以及透明區τ内，且位於發光區E内 的第二電極層114與位於透明區τ的第二電極層114是可 連接在一起的。由於第二電極層114是透明電極層，因此 即使透明區T内設置有第二電極層114，仍可使透明區τ 保有一定程度的透明度。 在此實施例中，由於第二絕緣層110在透明區T具有 第一開口 〇2，第一絕緣層106在透明區τ且有第一開σ 01 ’且絕緣層κ»4、1〇2在透明區了具有開;；^述3 二開口 02、第一開口 01以及絕緣層1〇4、1〇2中的開口 共同暴露出緩衝層ΗΠ。因此，第二電極層114覆蓋位於 上述開口底部雜衝層m’且暴料上蘭口的局部側 壁。 另外’在上述圖1之實施例中，透明區丁内僅設置有 緩衝層101 ’ 0此可以增加透明區τ的透明度。然，增加 透明區Τ之透明度之方法亦可以其他實施例來實現，^下 12 201205800 AU1004194 35185twf.doc/ri 所述。 圖4是根據本發明-實施例之有機發光裝置之畫素結 構的剖面示意圖。圖4之實施例與圖i之實施例相似，因 此在此與圖1之實施例相同的元件以相同的符號表示，且 不再重複贅述。® 4之實齡丨與圖丨之實_不相同之處 在於基板100上未設置有緩衝層，而位於發光區£内的閘 極絕緣層102延伸至透明區了内。在此實施例中，由於透 鲁 明區T内僅設置有閘極絕緣層1〇2，因此可以增加逸明區 T的透明度。 圖5是根據本發明一實施例之有機發光裝置之畫素結 構的剖面示意圖。圖5之實施例與圖丨之實施例相似，因 此在此與圖1之實施例相同的元件以相同的符號表示，且 不再重複贅述。圖5之實施例與圖1之實施例不相同之處 在於發光區E内的閘極絕緣層1〇2延伸至透明區τ内。因 此，在此實施例中，透明區τ内僅設置有緩衝層1〇1以及 • 閘極絕緣層1〇2。類似地，由於本實施例之透明區ΊΓ内僅 汉置有緩衝層.101以及閘極餐緣層.1〇2，因此可以使透明 區τ保有一定程度的透明度。 在上述數個實施例中，透明區Τ内僅設置緩衝層 101、閘極絕緣層102或是緩衝層1〇1與閘極絕緣層102。 然’根據另一實施例，亦可以是透明區Τ内完全無設置膜 層，也就是透明區Τ單純僅有基板1〇〇。 此外’在上述數個實施例中，晝素結構中的主動元件 都是以頂部閘極型薄膜電晶體為例來說明。然，根據其他 194 35185twf.doc/n 201205800 t晝素結構中的主動元件也可以採用底部 閘極型薄膜電晶體，如下所述。 龜疋2本發明一實施例之有機發光裝置之晝素結 == 圖6之實施例與圖1之實施例相似，因 之實施例铜的元件以相同的符號表示，且 在於二-:丄τ圖曰6之實施例與圖1之實施例不相同之處 :是底部閘極型薄膜電晶體，其包括閘極 上，祕^極S以及〉及極D。閘極G位於基板100 層上、’日層1〇2覆蓋閘極G，通道CH位於閘極絕緣 CH 0由單居與沒極D位於通道CH上。其中，通道 夕日疋/ 3夕層的半導體材料所構成，例如：非晶石夕、 二曰曰^微㈣、單㈣、銦錯鋅 3氧化物、錯魏合物、或其它合適的材料錯=之 層1〇=第-第上6覆且蓋,主動元件T，第-電極 件τ # 透過接觸窗v與主動元 ⑽與第-電極層=，第且 層⑴位於第⑽。發光 光層U2JL。 電極層114位於發 —絕緣層1G6與第二絕緣層㈣都僅設置 二^紋設置在透明區T _ °在透明區中僅 叹置有緩觸1G卜更詳細來說，第—絕緣 一 絕緣層具有開σ02、02，其暴露“明區 14 201205800 auu/u^194 35185twf.doC/n 因此 缓衝層m。由於透龍T㈣設置有緩衝層ι〇ι 可以增加透明區τ的透明度。 本發明之有機發光裝置，是以71部發光結構(或 =為向發光結構）’即第一電極層為反射材料所構成而 第二電極層為透明材料所構成，為主要實施範例。$ 發光結構(或向下發光結構），即第—電極層為透明材料所 構成，而第二電極層為反射材料所構成，並不適用於本發 明中。因為’發光區’例如：位於主動元件區中，底部發 光結構中發光層所發射的光會被主動元件區中主動元件的 不透光電極(例如：閘極、源極、汲極、掃描線、資料線、 電容電極等等)所遮蔽，而沒有任何的光線存在。 圖7是根據本發明一實施例之有機發光裝置之晝素結 構的剖面示意圖。圖7之實施例與圖6之實施例相似，因 此在此與圖6之實施例相同的元件以相同的符號表示，且 不再重複贅述。圖7之實施例與圖6之實施例不相同之處Further, the second electrode layer 112 is a transparent electrode layer, and the material is a metal oxide or a laminate of thin metal. Therefore, this J is placed in a top-emitting structure (or referred to as an upward-emitting structure), 艮H is composed of a reflective material, and the second electrode layer is transparent. The bottom emission structure (or the downward illumination is 10 201205800 AU1004194 35185twf.d〇c/n structure), that is, the first electrode layer is made of a transparent material, and the second electrode layer is made of a reflective material, which is not suitable for the present invention. In the invention. Because the light-emitting region, for example, is located in the active device region, the light emitted by the light-emitting layer in the bottom-emitting structure is absorbed by the opaque electrode of the active device in the active device region (for example: gate, source, drain, scan line) , data lines, capacitor electrodes, etc. are covered, and no light is present. It is worth mentioning that the first electrode layer 108 may also be disposed on the signal line of the above-mentioned pixel structure (for example, at least one of the scan #, SL, the data line DL, and the power line P1) and/or the electric device C. The light emitting layer 112 and the second electrode layer 114. That is, the light-emitting area E may cover a place where a signal line (for example, ==the line SL, the data line, and the power line pL) and/or the electric device C are disposed. Since the above-mentioned signal line and the capacitor are originally opaque, the light-emitting area E is covered with the signal line and the electric grid C, and the light-emitting area of the halogen structure can be further increased. In the embodiment of FIG. 1 above, the first electrode layer 1〇8, the light-emitting layer 112#, and the second electrode layer 114 are disposed in the light-emitting region E, so each sub-pixel region p is a light-emitting region E. Light is emitted, and the transparent zone τ does not emit light. However, since the film layer is hardly disposed in the transparent region τ, the transparent T can have a high degree of transparency. In this way, the transparency of the halogen structure can be improved. In addition, in the present embodiment, the first electrode layer 1〇8 and the light-emitting layer 112 are disposed in the light-emitting region. The illuminating area E does not need to contribute to the transparency of the halogen structure. Therefore, the first electrode layer 1A8 can be made of a material having high reflection properties so that the halogen structure retains the cavity structure', thereby increasing the luminance of the halogen structure of the organic light-emitting device. 201205 800194 35185twf.doc/n In the embodiment of Fig. 1, the second electrode layer 114 is disposed only in the light-emitting region E and is not disposed in the transparent region T. However, according to other embodiments, the second electrode layer 114 may be disposed in the light-emitting region e and the transparent region T as shown in FIG. The embodiment of Fig. 3 is similar to the embodiment of Fig. 1, and therefore the same elements as those of the embodiment of Fig. 1 are denoted by the same reference numerals and will not be described again. The embodiment of FIG. 3 is different from the embodiment of FIG. 1 in that the second electrode layer 114 is located in the light-emitting region E and in the transparent region T, and the second electrode layer 114 located in the light-emitting region E is located in the transparent region T. The second electrode layer 114, preferably 'is separated. In other embodiments, the second electrode layer 114 is located in the light-emitting region E and in the transparent region τ, and the second electrode layer 114 located in the light-emitting region E and the second electrode layer 114 located in the transparent region τ are connectable of. Since the second electrode layer 114 is a transparent electrode layer, even if the second electrode layer 114 is provided in the transparent region T, the transparent region τ can maintain a certain degree of transparency. In this embodiment, since the second insulating layer 110 has the first opening 〇2 in the transparent region T, the first insulating layer 106 is in the transparent region τ and has a first opening σ 01 'and the insulating layer κ»4, 1 〇 2 In the transparent region, there are openings; the opening of the second opening 02, the first opening 01, and the openings in the insulating layers 1〇4, 1〇2 together expose the buffer layer ΗΠ. Therefore, the second electrode layer 114 covers the partial side wall of the above-mentioned open bottom miscellaneous layer m' and the mass of the upper portion. Further, in the embodiment of Fig. 1 described above, only the buffer layer 101' is disposed in the transparent region, which can increase the transparency of the transparent region τ. However, the method of increasing the transparency of the transparent area can also be implemented by other embodiments, as described in 2012-05800 AU1004194 35185twf.doc/ri. Fig. 4 is a schematic cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention. The embodiment of FIG. 4 is similar to the embodiment of FIG. 1, and therefore the same components as those of the embodiment of FIG. 1 are denoted by the same reference numerals and the detailed description thereof will not be repeated. The actual age of the ® 4 is different from the actual one in that the substrate 100 is not provided with a buffer layer, and the gate insulating layer 102 located in the light-emitting area extends into the transparent region. In this embodiment, since only the gate insulating layer 1 〇 2 is provided in the luminal region T, the transparency of the illuminating region T can be increased. Figure 5 is a cross-sectional view showing the pixel structure of an organic light-emitting device according to an embodiment of the present invention. The embodiment of Fig. 5 is similar to the embodiment of the figure, and therefore the same elements as those of the embodiment of Fig. 1 are denoted by the same reference numerals and the description thereof will not be repeated. The embodiment of Fig. 5 is different from the embodiment of Fig. 1 in that the gate insulating layer 1〇2 in the light-emitting region E extends into the transparent region τ. Therefore, in this embodiment, only the buffer layer 1〇1 and the gate insulating layer 1〇2 are provided in the transparent region τ. Similarly, since the buffer layer .101 and the gate edge layer .1〇2 are disposed in the transparent region of the present embodiment, the transparent region τ can be kept to a certain degree of transparency. In the above embodiments, only the buffer layer 101, the gate insulating layer 102 or the buffer layer 〇1 and the gate insulating layer 102 are provided in the transparent region. However, according to another embodiment, it is also possible that there is no film layer in the transparent region, that is, the transparent region has only the substrate 1 〇〇. Further, in the above several embodiments, the active elements in the halogen structure are exemplified by a top gate type thin film transistor. However, a bottom gate type thin film transistor can also be used according to other active elements in the 194 35185 twf.doc/n 201205800 t 昼 structure, as described below.疋 疋 2 昼 结 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = The embodiment of τFig. 6 is different from the embodiment of Fig. 1 in that it is a bottom gate type thin film transistor including a gate electrode, a gate electrode S, and a drain electrode D. The gate G is located on the substrate 100, the day layer 1〇2 covers the gate G, and the channel CH is located at the gate insulation. CH 0 is located on the channel CH by the single and the gate D. Wherein, the semiconductor material of the channel 夕日疋/三夕 layer, for example: amorphous stone eve, 曰曰 微 ^ micro (four), single (four), indium zinc zinc oxide, mis-dimer, or other suitable material error = layer 1 〇 = first - upper sixth cover and cover, active element T, first electrode member τ # through contact window v and active element (10) and first electrode layer =, and layer (1) is located at (10). Light-emitting layer U2JL. The electrode layer 114 is located in the hair-insulating layer 1G6 and the second insulating layer (four) are only provided with two lines arranged in the transparent region T _ ° in the transparent region, only the sigh is touched 1G. In more detail, the first insulation-insulation The layer has an opening σ02, 02, which exposes "Bright area 14 201205800 auu/u^194 35185twf.doC/n, thus the buffer layer m. Since the through hole T (four) is provided with a buffer layer ι〇ι can increase the transparency of the transparent area τ. The organic light-emitting device of the invention is composed of 71 light-emitting structures (or = light-emitting structures), that is, the first electrode layer is made of a reflective material and the second electrode layer is made of a transparent material, which is a main example. (or the downward illuminating structure), that is, the first electrode layer is composed of a transparent material, and the second electrode layer is composed of a reflective material, which is not suitable for use in the present invention, because the 'light emitting region' is, for example, located in the active device region. The light emitted by the light-emitting layer in the bottom-emitting structure is shielded by the opaque electrodes (eg, gate, source, drain, scan line, data line, capacitor electrode, etc.) of the active device in the active device region. Without any light Figure 7 is a cross-sectional view showing the structure of a pixel of an organic light-emitting device according to an embodiment of the present invention. The embodiment of Figure 7 is similar to the embodiment of Figure 6, so that the same elements as the embodiment of Figure 6 are identical. The symbols are represented and will not be repeated. The embodiment of FIG. 7 is different from the embodiment of FIG.
在於基板100上未設置有緩衝層，而位於發光區Ε内的閘 極絕緣層102延伸至透明區Τ内。在此實施例中，由於透 明區Τ内僅設置有閘極絕緣層102，因此可以增加透明區 Τ的透明度。 圖8是根據本發明一實施例之有機發光裝置之畫素結 構的剖面示意圖。圖8之實施例與圖6之實施例相似’因 此在此與圖6之實施例相同的元件以相同的符號表示，且 不再重複贅述。圖8之實施例與圖6之實施例不相同之處 在於發光區Ε内的閘極絕緣層102延伸至透明區Τ内。因 201205800 35185twf.doc/n ______ 194 此，在此實施例中，透明區T内僅設置有緩衝層1〇1以及 閘極絕緣層1G2。類似地，由於本實施例之透明區τ内僅 設置有緩衝層101以及閘極絕緣層1〇2，因此可以使透明 區τ保有一定程度的透明度。The buffer layer is not disposed on the substrate 100, and the gate insulating layer 102 located in the light-emitting region 延伸 extends into the transparent region. In this embodiment, since only the gate insulating layer 102 is provided in the transparent region, the transparency of the transparent region can be increased. Figure 8 is a cross-sectional view showing the pixel structure of an organic light-emitting device according to an embodiment of the present invention. The embodiment of Fig. 8 is similar to the embodiment of Fig. 6. Therefore, the same components as those of the embodiment of Fig. 6 are denoted by the same reference numerals, and the description thereof will not be repeated. The embodiment of Figure 8 is different from the embodiment of Figure 6 in that the gate insulating layer 102 in the light-emitting region 延伸 extends into the transparent region. As a result of this, in the embodiment, only the buffer layer 1〇1 and the gate insulating layer 1G2 are provided in the transparent region T. Similarly, since only the buffer layer 101 and the gate insulating layer 1〇2 are provided in the transparent region τ of the present embodiment, the transparent region τ can be maintained with a certain degree of transparency.
類似地，在上述圖6至圖8之具有底部閘極型薄膜電 晶體之晝素結構中’其第二電極層114都僅設置在發光區 Ε中。然’根據其他實施例’第二電極層U4都也是可設 置在發光區Ε以及透明區τ中(類似圖3之第二電極層w 的設置方式）。其中，發光區Ε以及透明區τ中的第二電 極層114可選擇性的相互連接或不連接。 同樣地，在上述圖6至圖8之實施例中，透明區τ内 僅設置緩衝層101、閘極絕緣層1G2或是緩衝層⑼與間 極絕緣層102。然，輯另—餘例，亦可以是透明區τ 内完全無設置膜層’也就是透_ τ單純僅有基板ι〇〇。 綜上所述’由於本發明將有機發光裝置之晝素結構的 透明區中的膜層完全移除，或者是僅留下緩衝層、開極絕 緣層、或緩衝層與閘極絕緣I並且將畫素結構的發光層 設置在發光區巾。由於畫素結構之發光區主要是發揮發^ ^異主要是提供畫素結構利用基板外的環境光 =昇畫杜構的透明度。因此，在做成顯示裝置或電子 f置時，會錢框架（未、㈣)將有機發光裝置容納於其 ^，此時’㈣於透明區龍架巾的料並衫遮蔽外界 壤境光從基板外φ進人有機發絲置内。因此，當使用者 往有機發光裝置的第二電極看時，有機發光裝置會因為透Similarly, in the above-described pixel structure of the bottom gate type thin film transistor of Figs. 6 to 8, its second electrode layer 114 is disposed only in the light-emitting region 。. However, according to other embodiments, the second electrode layer U4 is also configurable in the light-emitting region Ε and the transparent region τ (similar to the arrangement of the second electrode layer w of FIG. 3). The light-emitting region Ε and the second electrode layer 114 in the transparent region τ may be selectively connected or not connected. Similarly, in the above embodiments of Figs. 6 to 8, only the buffer layer 101, the gate insulating layer 1G2 or the buffer layer (9) and the interlayer insulating layer 102 are provided in the transparent region τ. However, in the other case, it is also possible to have no film layer in the transparent region τ, that is, _ τ is purely only the substrate ι. In summary, the present invention removes the film layer in the transparent region of the halogen structure of the organic light-emitting device completely, or leaves only the buffer layer, the opening insulating layer, or the buffer layer and the gate insulating I and will The luminescent layer of the pixel structure is disposed in the illuminating zone. Because the illuminating area of the pixel structure is mainly to play the role of the main difference is to provide the pixel structure to utilize the ambient light outside the substrate = the transparency of the drawing. Therefore, when making a display device or an electronic device, the money frame (not, (4)) will accommodate the organic light-emitting device in its ^, at this time '(4) in the transparent area of the dragon frame towel and the shirt shields the external soil light from Outside the substrate, φ enters the organic hairline. Therefore, when the user looks at the second electrode of the organic light-emitting device, the organic light-emitting device may pass through
16 201205800 “ w …w 94 35185twf_do〇/n 明區的存在而使得透明度或亮度提昇。 此外，本發明將畫素結構的電極層以及發光層都設置 在發光區中，且此發光區中可以設置不透光材料當作第一 電極°在發光區中設置反射材料/不透光材料可以使有機發 光裝置之發光區保有共振腔結構，進而使有機發光裝置的 發光免度提昇。也就是說，有機發光裝置之晝素結構中的 有機發光結構較適用頂部發光結構（或稱為向上發光結 構）’而較不適用底部發光結構(或稱為向下發光結構），其 中’二者結構的差異可查閱上述實施例。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範肋’當可作些狀更動朗飾，故本 發明之保護範圍當視制之ΐ請專職麟界定者為準。 【圖式簡單說明】 構的綱一實施例之有機發光裝置之畫素結 圖2是圖1之晝素結構之局部上視示意圖。 ^ 3至圖8是根據本發明 置之晝素結構的剖面示意圖。X j(有機發先裝 【主要元件符號說明】 1〇〇:基板 ι〇1 :緩衝層 201205800 194 35185twf.doc/n 102 :閘極絕緣層 104, 106, 110 :絕緣層 108 :第一電極層 108a :下層電極 108b :上層電極 112 :發光層 114 :第二電極層 Ή、T2、T :主動元件 C :電容器 G卜G2、G :閘極 SI、S2、S :源極 Dl、D2、D :汲極 ㈤、CH2、CH :通道 El、E2 :電容電極 VI〜V5、V :接觸窗 SMI、SM2 :源極金屬層 DM1、DM2 :汲極金屬層 CM、02 :開口 E :發光區 T :透明區 P :子晝素區 DL :資料線 SL :掃描線 PL :電源線16 201205800 “w ...w 94 35185twf_do〇/n The presence of the bright area increases the transparency or brightness. Furthermore, the present invention places the electrode layer and the light-emitting layer of the pixel structure in the light-emitting area, and the light-emitting area can be set The opaque material is used as the first electrode. The reflective material/opaque material is disposed in the illuminating region to maintain the resonant cavity structure of the illuminating region of the organic illuminating device, thereby improving the illuminance of the organic illuminating device. The organic light-emitting structure in the halogen structure of the organic light-emitting device is more suitable for the top light-emitting structure (or referred to as the upward light-emitting structure) and less suitable for the bottom light-emitting structure (or called the light-emitting structure), wherein the difference between the two structures The above-mentioned embodiments can be referred to. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can be made without departing from the spirit and scope of the present invention. More versatile, so the scope of protection of the invention should be based on the definition of the full-time lining. [Simplified description of the schema] 2 is a top view of the structure of the halogen structure of Fig. 1. ^ 3 to Fig. 8 is a schematic cross-sectional view of a structure of a halogen substrate according to the present invention. X j (organic hair first installed [ Main component symbol description] 1〇〇: substrate 〇1: buffer layer 201205800 194 35185twf.doc/n 102: gate insulating layer 104, 106, 110: insulating layer 108: first electrode layer 108a: lower electrode 108b: upper layer Electrode 112: light-emitting layer 114: second electrode layer Ή, T2, T: active device C: capacitor Gb G2, G: gate SI, S2, S: source D1, D2, D: drain (five), CH2 CH: Channels El, E2: Capacitance electrodes VI to V5, V: Contact windows SMI, SM2: Source metal layers DM1, DM2: Deuterium metal layers CM, 02: Opening E: Light-emitting region T: Transparent region P: Plain Area DL: Data Line SL: Scan Line PL: Power Line