TW201204194A

TW201204194A - Manufacturing process of high heat conductive substrate

Info

Publication number: TW201204194A
Application number: TW99122881A
Authority: TW
Inventors: Wen-Hsin Lin
Original assignee: Holy Stone Entpr Co Ltd
Priority date: 2010-07-12
Filing date: 2010-07-12
Publication date: 2012-01-16
Also published as: TWI406603B

Abstract

The present invention relates to a manufacturing process of a high heat conductive metal substrate. The method includes attaching an insulation glue having high heat conductivity and heat tolerance on a metal sheet (e.g., copper or copper-aluminum alloy). The insulation glue is a high heat conductive insulation glue including the clay powder. The heat conductivity is 200-500W/M.K. and can tolerate at a high temperature between 400-600 degrees of Celsius. Through lithography/etching or stamping, the desired area and patterns can be obtained on the conductive metal substrate. The conductive metal substrate can be attached to a heat dissipation substrate through the insulation glue to form a blocking wall. The process has high precision and the substrate is highly thermal conductive.

Description

201204194 六、發明說明：【發明所屬之技術領域】、本發_提供-種高導減板製程，尤指金屬導電基材為利用金>1片上貼附有高導熱、耐高溫之絕緣膠，並以露光顯影/_或衝模方式成形所要面積及線路部份，_過絕緣膠”越基祕合後絲為麟之高導絲板製程。【先前技術】按，隨著科技發展的突飛猛進以及人睛更高生活品質的追求所以對於睁多產品應用特性趨向極為嚴格的要求，造成新開發材料的使用成為必要手段，而現今積體電路聽製程受到追求傳輸效率更佳，以及體積小型化之影響（如行動電話、筆記型電腦之電子元件），因此業界對這方面投入了相當可觀之研究經費，而經過多年研究後，便發明出一種以陶兗材質所製成之陶曼基板，而陶莞基板具有優良絕緣性、化學安定性、電雜性、高硬度、耐絲及耐高溫等特性所以陶变基板可達成之功效遠轉、絲板更好，以致使陶瓷基板在目前被應用之頻率上也就越來越高。再者由於陶莞基板為具備有良好熱傳導之優勢，且因現今被大力所推廣的發光二極體（L E D)在使用上卻具有產生南熱之問題’然而最常解決高熱的方式是利用散熱轉片將熱導出、發散，是以，若是利用陶变基板作為發光二極體的電路基板即可提高熱傳導效率，因此製造麟便紛紛針對「 201204194 此部份技術輯行研發，但因發光二極體結構上需具有光杯限制其晶片所發4光源照射方向，才可避免光源散射使照度提高’此外，若是在喊基板製程中直接將光杯成型，便可減少其製程、模具費用’所以製造廠商便利_竟材料作為光杯的使用原料來達到此一目的。 -般陶錄板的補大致上分為三種，主要為由氮化銘 (A 1 N)、氧化銘（A丨2〇3)及低溫共燒陶究（201204194 VI. Description of the invention: [Technical field to which the invention belongs], the present invention provides a high-ductivity reduction plate process, especially a metal conductive substrate for the use of gold > 1 sheet with high thermal conductivity and high temperature resistant insulating glue And the exposed area and the part of the line are formed by the development of the light/_ or the die, and the _ over-insulating glue is the core of the high-precision wire board process. [Prior Art] Press, with the rapid development of science and technology As well as the pursuit of higher quality of life, the application of new products has become extremely necessary, and the use of newly developed materials has become a necessary means. Today's integrated circuit listening process is pursued for better transmission efficiency and compact size. The impact (such as mobile phones, electronic components of notebook computers), so the industry has invested considerable research funding in this area, and after years of research, it has invented a Tauman substrate made of ceramic materials. The Taowan substrate has excellent insulation, chemical stability, electrical hybridity, high hardness, resistance to silk and high temperature resistance, so the ceramic substrate can be achieved. The effect is far-reaching and the silk plate is better, so that the ceramic substrate is getting higher and higher at the frequency of being applied at present. Moreover, the ceramics substrate has the advantage of good heat conduction and is promoted by the current promotion. Diodes (LEDs) have the problem of generating south heat in use. However, the most common way to solve high heat is to use heat transfer fins to conduct heat and divergence. Therefore, if a ceramic substrate is used as a light-emitting diode circuit, The substrate can improve the heat transfer efficiency. Therefore, the manufacturing process has been developed for the "201204194 part of this technology. However, since the light-emitting diode structure needs to have a light cup to limit the direction of the light emitted by the wafer, the light source scattering can be avoided. In order to improve the illuminance, in addition, if the light cup is directly formed in the process of shouting the substrate, the process and the mold cost can be reduced. Therefore, the manufacturer is convenient to use the material as a raw material for the light cup to achieve this purpose. The board's complement is roughly divided into three types, mainly consisting of Niobium (A 1 N), Oxide (A丨2〇3), and low-temperature co-fired ceramics (

Low Temperature CofiredLow Temperature Cofired

Ceramics ;LTCC)製成，其氮化紹（ain )材質在進行燒結時為利用真空爐，而氧化銘（A ) 2〇3Made from Ceramics; LTCC), its ain material is used in the vacuum furnace for sintering, and the oxidation (A) 2〇3

)及低溫共燒陶瓷（Low Tempera tureC ofired Ceramics;LTCC)則是利用一般燒結爐，由於陶瓷基板在進行光杯的燒結時，陶瓷基板表面上之電路已經成型，而一般燒結爐中的氧氣會使電路產生氧化現象，導致後續製程中進行焊接或電鑛時，便會產生已銀上金屬·落祕接不沾之問題，讓產品成為瑕疵品或廢品，而使製造廠商在製作光杯上便會受到原料限制，且若使用不同的製程、加卫可能需要姻不同的原料，如此一來則會使整體製造上受到限制。【發明内容】故，發明人有鑑於上述制之不足與缺失，乃搜集相關資料經由多方評估及考量’方以從事此行業之多年經驗透過 201204194 不斷的4作、細，赌計纽種高導錄㈣誕生者。本發明之主要㈣乃在於_基絲社核形有預設線路之導电金屬層，並於散熱基板與導電金屬層表面預定位置勸合有金料電基材’其麵導電基材為彻銅或銅紹合金等金屬片上貼附—層高導熱、耐高溫之絕轉，再對金屬And low temperature co-fired ceramics (LTCC) use a general sintering furnace. Since the ceramic substrate is sintered in the light cup, the circuit on the surface of the ceramic substrate has been formed, and the oxygen in the general sintering furnace will When the circuit is oxidized, causing welding or electric ore in the subsequent process, the problem of the metal on the silver and the secret of the silver will be generated, so that the product becomes a defective product or a waste product, and the manufacturer is making a light cup. It will be limited by the raw materials, and if different processes are used, and the raw materials may be different, the overall manufacturing will be limited. SUMMARY OF THE INVENTION Therefore, in view of the above-mentioned deficiencies and shortcomings of the above-mentioned system, the inventors have collected relevant information through multi-party evaluation and consideration of 'the years of experience in the industry's experience through the 201204194 constant 4, fine, gambling new species high guidance Record (4) The birth of the person. The main (4) of the present invention is that the core wire has a conductive metal layer with a predetermined line, and the metal substrate is immersed in a predetermined position on the surface of the heat dissipation substrate and the conductive metal layer. Attached to a metal sheet such as copper or copper-alloyed alloy - high thermal conductivity, high temperature resistance, and metal

導電基材彻觀騎彡或賊方式加1成形出所要面 ^及線路部份’且將金麟電基材透過絕緣膠與散熱基板黏 ^形為局導熱之織，可避免金屬片及導電金屬層於燒結乳化成騎倾’以防止後續的焊接、魏餘中因氧化銅造成贿鱗接不沾等醜整體之製造縣者。糾產4羊、大幅降低本U之次要目的乃在於金屬導電基材與喊基板上之The conductive substrate is completely ridiculously ridiculed or thief-added to form the desired surface and the portion of the wire, and the gold-plated substrate is adhered to the heat-dissipating substrate through the insulating rubber and the heat-dissipating substrate to avoid the metal sheet and the conductive material. The metal layer is emulsified into a simmering sinter to prevent subsequent welding, and Wei Yuzhong is a manufacturing county that is ugly and ugly due to copper oxide. Correcting the production of 4 sheep, greatly reducing the secondary purpose of this U is the metal conductive substrate and shouting on the substrate

=片、導電金屬層表面為鑛上有防氧化焊接層，而於防氧 =曰處進仃打線、覆晶或焊接晶片後’便可藉由絕緣膠、、擔牆來撞止晶片所發出光源，並讓後續製程之發光二 =體可在發出絲後，亦可藉輯牆關其光射方向，從而實現發出所需光型之光源。 x月之再目的乃在於金屬導電基材所具之金屬片表二絕緣膠直接與散熱基她合’且概熱基板可 $電路娜，即爾_基材露光顯= The surface of the conductive metal layer is an anti-oxidation solder layer on the ore, and after the anti-oxidation = 曰仃仃、、、、、、或或或或焊接焊接焊接 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The light source, and the subsequent process of the light two = body can be after the wire is emitted, or by the wall to close the light direction, thereby achieving the light source of the desired light type. The purpose of x month is that the metal conductive sheet of the metal conductive substrate has the same surface as the heat sink base, and the heat substrate can be circuited, that is, the substrate is exposed.

"刻進打加工成形出所要的面積及線路部份，並於散I ^ 〇 1 5 201204194 f板上以雷射方式打孔形成有貫穿至金則之貫穿孔，再於貝孔内鐘上導電金屬後，使絕緣膠二側表面上之金屬導電基材、餘基如卩戦相互導餘H，灿結構設計，可達到有效節省郎、_其整體所佔聰積之效用。【實施方式】為達成上述目的及功效，本發明所採用之技術手段及其構造，兹緣圖就本發明之較佳實施例詳加說明其特徵與功能如下’俾利完全瞭解。請參閱第-、二圖所示，係分別為本發明較佳實施例之步驟流程陳勤示_，可清楚看出，當棚本發明南導熱基板製程時，為包括有下列步驟流程： (1〇 0)在金屬導電基材i所具之金屬片i丄—側表面上貼附有具高導熱、耐高溫之絕緣膠2。 (1 0 1)對金屬導電基則進行加卫成形出所要的面積及線路部份。 (1 0 2 )將金屬導電基材i透過絕緣膠2與散熱基板3黏合後成形為擋牆21。 (10 3)再於顯露之金則11及散熱基板3所具之導電金屬層3 2表峻上防氧化焊接層4。上述之金屬導電基材i所具之金屬片丄工可為鋼或娜 (Cu/A1)合金等材質製成，並於金屬片丄丄一側表面上可利用水壓機貼附有具高導熱、耐高溫之絕緣膠2，且該 201204194 絕緣膠2 Temp 主要成份係利職級可為低溫共燒陶竟 erature Cofired (Low 轉殊d;LTCC)或氧她(Al2〇3)，並 φ殊彻的*__脂依縣百分轉職、製帶所於與斗液體H ’其中高熱導絕緣樹脂為细分子結構的"Engraved into the processing area to form the required area and line parts, and drilled through the hole on the I ^ 〇1 5 201204194 f plate to form a through hole through the gold, and then in the bell hole After the conductive metal is applied, the metal conductive substrate on the two side surfaces of the insulating rubber and the residual base such as ruthenium are mutually guided by the H, and the structure can be effectively saved, thereby achieving the effect of effectively saving the singularity of the lang. [Embodiment] In order to achieve the above object and effect, the technical means and the structure of the present invention are described in detail, and the features and functions of the preferred embodiment of the present invention are as follows. Please refer to the first and second figures, which are respectively the steps of the preferred embodiment of the present invention. It can be clearly seen that when the process of the south heat-conducting substrate of the present invention is included, the following steps are included: (1) 0) An insulating rubber 2 having high heat conductivity and high temperature resistance is attached to the side surface of the metal sheet of the metal conductive substrate i. (1 0 1) The metal conductive base is shaped to form the required area and the line portion. (1 0 2 ) The metal conductive substrate i is bonded to the heat dissipation substrate 3 through the insulating paste 2 to form a retaining wall 21. (10 3) Further, the exposed gold layer 11 and the conductive metal layer 3 2 of the heat dissipation substrate 3 are provided with an anti-oxidation solder layer 4. The metal sheet of the above-mentioned metal conductive substrate i can be made of a material such as steel or a ceramic (Cu/A1) alloy, and a high-heat conductivity can be attached to the surface of the metal sheet by a hydraulic press. High temperature resistant insulating rubber 2, and the 201204194 insulating rubber 2 Temp main component of the grade can be low temperature co-fired ceramics aceature Cofired (Low change d; LTCC) or oxygen her (Al2 〇 3), and φ *__Yinyi County is transferred to the company, and the belt is in the liquid H' where the high thermal conductivity insulating resin is a fine molecular structure.

于二（CH2) η ’ η = 4、6、8·..’經由自己調配排而幵滅異方性㈣，再透過熱硬化處理、财結合後，使其結晶的構造形鱗方性_ ’便可成型出具高解化耐高溫球殊_高解絕緣難，藉此高熱導絕緣樹脂配合陶变私所製成之絕緣膠2液體或靜整體導鮮可達到2 〇〇〜5 0 0W/M· Κ ’而耐溫則可介於4q〇〜6〇〇。〇之間，再對金屬導電基材1糊露光卿/_或衝模方式來進行加工成形出所要的面積及線路部份，即可將金屬導電基材1透過絕緣膠2與散熱基板3黏合後，送人無氧爐進行共燒成形為雜2 1，由於絕緣® 2燒結成形為硬胚時，其金屬片11表面不會接觸到氧氣，便可避免其銅或銅鋁（二(CH2) η ' η = 4,6,8·..' 幵异异经由自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己自己'It can be formed into a high-solving high-temperature ball _ high-solution insulation is difficult, and the high thermal conductivity insulating resin and the ceramic rubber made of insulating rubber 2 liquid or static overall fresh can reach 2 〇〇~5 0 0W /M· Κ 'The temperature resistance can be between 4q〇~6〇〇. Between the crucibles, the metal conductive substrate 1 is pasted with a light-clearing film or a die to form a desired area and a line portion, and the metal conductive substrate 1 is bonded to the heat-dissipating substrate 3 through the insulating rubber 2 , sent to an anaerobic furnace for co-firing to form a miscellaneous 2 1, due to the insulation ® 2 sintered into a hard embryo, the surface of the metal sheet 11 will not be exposed to oxygen, it can avoid copper or copper and aluminum (

Cu/A1)合金材質製成之金屬片丨！氧化還原成為氧化鋼、氧化鋁，藉此可防止後續焊接、電鍍製程中因氧化銅、氧化鋁造成較差的沾潤，以致已經鍍上的金屬層剝落，或是使焊接不沾等後續製程產生問題而成為廢品、瑕疵品，因此本發明利用無氧爐共燒則可避免上述之問題產生，從而提升產品良率、大幅降低整體製造上之成本。 201204194 此外’散熱基板3可為陶究基板，且該陶莞基板有別於般以印刷的方式製作，其係利用氮化銘i N)或氧化鋁（A 1 2〇3)材質製成軟生胚，並於軟生胚上打孔後進行燒結，但於實際應用時，並非以此作為侷限，亦可於軟生胚燒結後再以雷射方式打孔形成有具—麵—個以上之貫穿孔 3 1之陶錄板3 ’另於陶絲板3—侧表面上可利用鑛膜 (Coating)方式鑛上有金屬層（圖中未示幻，使其金屬層可為鎳、鉻或錄鉻石夕與銅之合金（N 土/C/S 1 + C u )、鐵録合金（F e /c ◦)、鐵雜合金（f e /C 〇/Ni )材質製成’而厚度為可介於◦,丄5 _〜〇; 5㈣之間’並於金顧表面上_有乾膜，且對乾膜進行光學微影技術之露光顯影處理後，再去除掉預設線路部 2之乾膜，祕預設_絲受細輯、麟之線路部份带屬層表社卿用_方歧上有導電金屬層3 2，其導包金屬層3 2可為銅材質所製成、厚度為可介於5 〇 _〜 ^⑽之間’又導電儀3 2表面上為崎膜方式鍵上、艮、金材質製成之_屬層（财未示出），再触錢，獨絲乾膜之金顧進賴_理，軸鰣〜錄金屬層便可留下所需之綠路，卿更可將散熱基板3所製成的生胚送人無氧爐進行共燒， =絕轉2便成形為擋牆2 i，再於顯露之金屬片^ W金屬層32表面虹防氧化烊接層4，且防氧化焊接層 201204194 便元成本發明南精密度及 4可為金、銀或鎳等金屬所製成高導熱之基板製程。再者’上舰緣膠2燒結後則會成形為擋牆2 i，而於 _防氧鱗接層4處進行打線、覆晶或戦W後，便可猎由擋牆2 1來擋止“所發出錢，並讓後續製程之發光二極體可在發咖後，亦可藉由·2 i限制其光獅射方向，從而實現發出所需光型之光源。Cu/A1) Metal sheet made of alloy material! Oxidation and reduction into oxidized steel and alumina, thereby preventing poor adhesion caused by copper oxide and aluminum oxide in the subsequent soldering and electroplating processes, so that the metal layer which has been plated is peeled off, or the subsequent processes such as soldering are not generated. The problem becomes waste and defective products. Therefore, the present invention can avoid the above problems by co-firing with an anaerobic furnace, thereby improving product yield and greatly reducing the cost of overall manufacturing. 201204194 In addition, the 'heat-dissipating substrate 3 can be a ceramic substrate, and the ceramic substrate is different from the general printing method. It is made of nitriding i N) or alumina (A 1 2 〇 3). Raw embryos, and sintered on soft embryos, but in practice, this is not a limitation. It can also be formed by laser drilling after soft green embryos are sintered. The through hole 3 1 of the ceramic recording plate 3 'on the side surface of the ceramic plate 3 - can be used in the mining method (Coating) to have a metal layer on the mine (not shown in the figure, the metal layer can be nickel, chromium Or recorded in chrome stone and copper alloy (N soil / C / S 1 + C u ), iron alloy (F e / c ◦), iron alloy (fe / C 〇 / Ni) made of 'thickness It can be between ◦, 丄5 _~ 〇; 5(d) and has a dry film on the surface of the gu gu, and the exposed lithography of the dry film is exposed, and then the preset line portion 2 is removed. The dry film, the secret preset _ silk is finely edited, the part of the line of Lin is used by the layer of the table _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ,thick It can be between 5 〇 _~ ^ (10)' and the surface of the conductivity meter 3 2 is made of sputum, gold, yt, and gold. The dry film of Jin Gujin Lai _ rational, axis 鲥 ~ recorded metal layer can leave the required green road, Qing can also send the raw embryo made of heat sink substrate 3 to the anaerobic furnace for co-firing, = absolutely Turn 2 will be formed into the retaining wall 2 i, and then the exposed metal sheet ^ W metal layer 32 surface rainbow anti-oxidation layer 4, and the oxidation-proof solder layer 201204194 will cost the invention south precision and 4 can be gold, silver Or a high-heat-conducting substrate process made of a metal such as nickel. Further, after the upper edge glue 2 is sintered, it will be formed into a retaining wall 2 i, and the wire-proof, flip-chip or 戦W will be formed at the _ anti-oxidation scale layer 4. After that, you can hunt the wall 2 1 to stop the "issued money, and let the LEDs of the subsequent process can be used after the coffee is issued, and the direction of the light lion can be restricted by the 2i The light source of the desired light type.

上述之散熱基板3可為喊基板__讀及高準卢露光^伽m方作，且麵絲録面虹金屬層方二可為踐鑛金屬或糊奈米介面雜麟陶錄板進行表面改質，驗上鎳、鉻、金、銀等金屬，而金屬層、導電金屬層3 2以及防減縣層轉製紅麵方式柯利用真空鍍膜、化學驗、_献學魏料遍且縣較為便宜^ 鑛膜方式，惟有_£基板表_上韻層、導f金屬層3 2及防氧化焊接層4之方法係為現有技術的範_，且該細部構成並非本案發明要點，茲不再作贅述。此外’以上所述僅為本發明較佳實施例而已，非因此即侷限本發明之申請補，本發明金將電基材i所具之金屬片1 1表面上亦可透過貼_緣膠2直接與散熱基板3 黏合’且該散熱基板3可為銅基電路板、铭基電路板或鐵基電路板等，即可對金屬導電基材1露細影/侧進行加工成形出所要的面積及線路部份後送入無氧爐燒結成形為擋牆 t S3 9 201204194 21，使絕緣膠2於燒結成形為硬胚時，金屬片丄丄表面不會接觸到氧氣，便可避免其氧化還原成騎化鋼、氧似面呂= 造成已鐘上的金屬層祕或焊接科等朗製朗題而成為廢品、瑕疫品，並於散熱基板3上為以雷射方式打孔形成有一個或一個以上貫穿至金屬片U上之貫穿孔31後，再於散熱基板3上之貫穿孔3 μ鍍上導電金屬，並與金屬片丄 1形成電性連接’卿爾2二侧表面上之金屬導電基材 1、散熱基板3即形成相互導電狀態，以此結構設計，可達到有效節省空間、縮減其整體所佔用體積之效用。是以，本發明主要針對高導熱基板製程，而可在散熱基板3表面上成形預設線路之金屬層、導電金屬層3 2，再於散熱基板3鱗電金顧3 2表面上敢位置黏合有金屬導電土材1 〃金屬導電基材1為利用銅或銅銘合金等金屬片 1 1上貼附有-層具*導熱、耐高溫之絕轉2，再對金屬導電基材1彻露絲影/蝴或衝模方錢形丨所要的面積及線路挪’且將金屬導電基材i透過絕轉2與散熱基板3黏合、燒結後成形為高導熱之擔牆21，便可避免銅或銅銘合金等材質之金屬片11及導電金屬屬3 2於燒結時氧化f為氧化銅，以防止後續焊接、電賴針因氧化銅造成洛或谭接不轉問題，並提升產品良率、大幅降低整體之 =成本=保護重點之所在，且該散熱基板工之另側表面上 '' ° ' 乂、、° 5有散熱片或導熱基座型式之散熱模組（圖中 201204194 P 僅〜提供物製紅發光二極體可透過散熱 W蚊、面積，同時將熱量朝周圍快速排散、冷卻降溫使用即可，舉凡翻本發賴明書及圖式内容所為之簡易修飾及等效結構變化，均應_包含於本购之專繼圍内，合予陳明。、’’T上所述本發明上述之高導熱基板製程於使用時，為確貝月b達到其功效及目的，故本發明誠為一實用性優異之發明’為符合發明專利之申請要件，爱依法提出申請，盼審委早曰賜准本案’以保障發明人之辛苦發明，倘若鈞局審委有任何稽疑，請不吝來函指示，發明人定當竭力配合，實感公便。 201204194 【圖式簡單說明】第一圖係為本發明較佳實施例之步驟流程圖。第二圖係為本發明較佳實施例之剖面示意圖。【主要元件符號說明】 1、金屬導電基材 1 1、金屬片 2、絕緣膠 2 1、擋牆 3、散熱基板 3 1、貫穿孔 3 2、導電金屬層 4、防氧化焊接層The above-mentioned heat-dissipating substrate 3 can be a shouting substrate __reading and Gaozhun Luluguang ^ gamma square, and the surface of the surface of the rainbow metal layer can be used for the surface of the metal or paste nano interface Modification, the detection of nickel, chromium, gold, silver and other metals, while the metal layer, conductive metal layer 3 2 and the anti-reduction of the county layer to convert the red surface method Ke using vacuum coating, chemical inspection, _ offer Wei materials throughout the county Cheap ^ mineral film method, only _£ substrate table _ upper rhyme layer, lead f metal layer 3 2 and anti-oxidation solder layer 4 method is the prior art model, and the detail is not the main point of the invention, no longer Make a statement. In addition, the above description is only a preferred embodiment of the present invention, and the invention is not limited to the application of the present invention. The gold sheet of the present invention can also pass through the surface of the metal sheet 1 1 . The heat-dissipating substrate 3 can be directly bonded to the heat-dissipating substrate 3, and the heat-dissipating substrate 3 can be a copper-based circuit board, a ground-based circuit board or an iron-based circuit board, etc., and the exposed surface/side of the metal conductive substrate 1 can be processed to form a desired area. And the part of the line is sent to the anaerobic furnace for sintering and forming into a retaining wall t S3 9 201204194 21, so that when the insulating rubber 2 is sintered into a hard embryo, the surface of the metal sheet is not exposed to oxygen, and the oxidation reduction can be avoided. Cheng riding steel, oxygen like surface Lu = caused the metal layer secret or welding department on the clock to become a waste, plague, and on the heat sink substrate 3 for laser drilling to form a Or one or more through holes 31 penetrating into the metal piece U, and then plating the conductive metal on the through hole 3 μ on the heat dissipation substrate 3 and electrically connecting with the metal piece 丄 1 on the two sides of the surface The metal conductive substrate 1 and the heat dissipation substrate 3 form a mutually conductive state, Structural design, up to save space, reduce the effectiveness of the overall volume occupied. Therefore, the present invention is mainly directed to a high thermal conductivity substrate process, and a metal layer of a predetermined line and a conductive metal layer 32 can be formed on the surface of the heat dissipation substrate 3, and then the heat dissipation substrate 3 can be bonded to the surface of the surface of the heat dissipation substrate 3 Metal conductive earth material 1 〃Metal conductive substrate 1 is made of metal sheet such as copper or copper alloy. 1 1 is attached with a layer of heat conduction and high temperature resistance, and then the metal conductive substrate 1 is exposed. The wire shadow/butterfly or the die-shaped square shape and the required area are removed, and the metal conductive substrate i is bonded to the heat-dissipating substrate 3 through the absolute rotation 2, and is sintered to form a high-heat-conducting wall 21, thereby avoiding copper or The metal piece 11 of the material such as Tongming alloy and the conductive metal genus 3 2 oxidize f to copper oxide during sintering to prevent the subsequent welding and the electric thimble from causing the problem of loose or tan due to the copper oxide, and improve the product yield, Significantly reduce the overall = cost = protection focus, and the heat sink substrate on the other side of the surface '' ° ' 乂, ° ° 5 heat sink or thermal base type cooling module (201204194 P only ~ Provides a red-emitting diode that can dissipate heat, mosquitoes, and noodles At the same time, the heat can be quickly dissipated to the surrounding, cooled and cooled, and the simple modification and equivalent structural changes of the book and the contents of the drawings should be included in the special package of the purchase. Chen Ming. The above-mentioned high-heat-conducting substrate process of the present invention described above is used for the purpose and purpose of the present invention. Therefore, the present invention is an invention excellent in practical use. Apply for the requirements, love to apply in accordance with the law, and hope that the trial committee will grant the case as early as possible to protect the inventor's hard work. If the audit committee has any doubts, please do not hesitate to give instructions, the inventor will try his best to cooperate and feel punished. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a flow chart of a preferred embodiment of the present invention. The second drawing is a schematic cross-sectional view of a preferred embodiment of the present invention. [Description of Main Components] 1. Metal Conductive Substrate 1 1. Metal sheet 2, insulating rubber 2 1, retaining wall 3, heat dissipating substrate 3 1, through hole 3, conductive metal layer 4, anti-oxidation solder layer

Claims

201204194 七、申請專利範圍： 1種4熱基板尤指金屬導電基材可透過絕緣膝與散熱基板黏合後成形為高導熱播牆之基板製程，其步驟流程為包括有： (a) 在金屬導電基材所具之金屬片一側表面上貼附有具高導熱、耐高溫之絕緣膠； (b) 對金屬導電基材進行加I顧彡所要面積及線路部份； (c) 將金屬導電基材透過絕緣膠與散熱基板黏合後成形為擋牆。、申π專利範圍第1項所述高導熱基板製程，其中該金屬導電基材所具之金屬片可為銅或銅铭（Cu/a丄）合金材質製成。 3、如申請專利範圍第1項所述高導熱基板製程，其中該絕緣膠可利用陶曼粉及高熱導絕緣樹脂等依預定百分比作調聚、製 π製成之液體或薄帶，且絕緣膠之導熱率可達到2 〇〇〜5 0 0 W/M · K ’而耐溫介於4 Q 〇〜6 〇〇 °c之間。 4如申請專利範圍第3項所述高導熱基板製程，其中該陶变粉可為低溫共燒陶瓷（Low Temperature C〇 f 1 r e d Ce r ami c s ; LTCC)或氧化鋁 (A 1 2〇3)。如申請專利範圍第1項所述高導熱基板製程，其中該金屬片為可利用露光顯影/蝕刻或衝模方式加工成形出所要面積及、[S] 13 5 201204194 線路部份。 6、如申請專利範圍第1項所述高導熱基板製程，其中該散熱基板可為陶絲板，並利用軟生胚打孔後燒結，或是軟生胚燒結後再以雷射方切孔形献—個或上貫穿孔之陶莞基板’且軟生胚可為氮化銘（A 1 N)或氧化銘（a ! 2〇3 )材質製成。 7、如申請專利範圍第6項所述高導熱基板製程，其中該陶究基板表面錄上有金屬層，並於金屬層表面上貼附有乾膜，且對乾膜進行露細影後，再去轉線路雜之健，而於顯露線路部份金屬層表面上鑛上導電金屬層；或是金屬層表面上鑛上導電金朗，並於導電金屬層表錢上防爛金屬層，再進行去除乾膜、蝕刻作業。 8、如申請專利範圍第7項所述高導熱基板製程，其中該金屬層可為鎳、鉻或鎳鉻矽與銅之合金（Ni/Cr/Si+Cu )、鐵鈷合金（Fe/Co)、鐵姑鎳合金（Fe/(：〇/ N i )材質製成，且導電金屬層可為銅材質製成。 9如申明專利範圍苐1項所述尚導熱基板製程，其中該散熱美板為可送入無氧爐進行共燒使絕緣膠成形為擋牆，再於顯露之金屬片及導電金屬層表面鍍上防氧化焊接層，且防氧化焊接層可為金、銀或鎳等金屬。 10、如申請專利範圍第1項所述高導熱基板製程，其中該散熱基板可為銅基電路板、IS基電路板或鐵基電路板等，並於 201204194 散熱基板上以雷射方式打孔形成有一個或一個以上貫穿至金屬片上之貫穿孔後，再於貫穿孔内鍍上導電金屬。201204194 VII. Patent application scope: A type of 4 thermal substrate, especially a metal conductive substrate, can be formed into a high thermal conductive wall substrate process by bonding the insulating knee and the heat dissipation substrate, and the step flow includes: (a) in the metal The conductive substrate has a high thermal conductivity and high temperature resistant insulating paste attached to one surface of the metal sheet; (b) adding a metal conductive substrate to the required area and the line portion; (c) metal The conductive substrate is bonded to the heat dissipation substrate through the insulating adhesive to form a retaining wall. The process of the high thermal conductivity substrate according to claim 1, wherein the metal conductive substrate has a metal piece made of copper or copper (Cu/a) alloy. 3. The high thermal conductivity substrate process according to claim 1, wherein the insulating glue can be condensed, made into a liquid or thin strip made of π according to a predetermined percentage, such as taman powder and high thermal conductive insulating resin, and insulated. The thermal conductivity of the glue can reach 2 〇〇~5 0 0 W/M · K ' and the temperature resistance is between 4 Q 〇~6 〇〇°c. [4] The high thermal conductivity substrate process according to claim 3, wherein the ceramic powder may be a low temperature co-fired ceramic (Low Temperature C〇f 1 red Ce r ami cs; LTCC) or an alumina (A 1 2〇3) ). The high heat conductive substrate process according to claim 1, wherein the metal piece is formed by a bare light development/etching or die process to form a desired area and a [S] 13 5 201204194 line portion. 6. The high heat conductive substrate process according to claim 1, wherein the heat dissipation substrate is a ceramic wire plate, and is sintered by using a soft green body, or is sintered by a soft green body and then cut by a laser square. Shaped - one or the upper through hole of the pottery Wan ' and the soft embryo can be made of Niobium (A 1 N) or oxidized Ming (a! 2〇3) material. 7. The process of high thermal conductivity substrate according to claim 6, wherein the surface of the ceramic substrate is recorded with a metal layer, and a dry film is attached on the surface of the metal layer, and after the dry film is exposed, Then turn the line to the health of the line, and expose the conductive metal layer on the surface of the metal layer of the line; or the conductive gold on the surface of the metal layer, and prevent the metal layer on the surface of the conductive metal layer, and then The dry film is removed and the etching operation is performed. 8. The high thermal conductivity substrate process according to claim 7, wherein the metal layer is nickel, chromium or nickel chrome and copper alloy (Ni/Cr/Si+Cu), iron cobalt alloy (Fe/Co) ), Tie Ni nickel alloy (Fe / (: 〇 / N i ) material, and the conductive metal layer can be made of copper material. 9 As stated in the patent scope 苐 1 item, the thermal conductive substrate process, wherein the heat dissipation beauty The plate can be fed into an anaerobic furnace for co-firing to form the insulating rubber into a retaining wall, and then the surface of the exposed metal piece and the conductive metal layer is plated with an oxidation-proof soldering layer, and the oxidation-proof soldering layer can be gold, silver or nickel. 10. The high thermal conductivity substrate process according to claim 1, wherein the heat dissipation substrate can be a copper-based circuit board, an IS-based circuit board or an iron-based circuit board, and is laser-exposed on the 201204194 heat dissipation substrate. After the punching is formed with one or more through holes penetrating into the metal piece, the conductive metal is plated in the through hole.

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