TW201200627A - Heat treatment method having a heating step, a treatment step, and a cooling step - Google Patents

Heat treatment method having a heating step, a treatment step, and a cooling step Download PDF

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Publication number
TW201200627A
TW201200627A TW100112762A TW100112762A TW201200627A TW 201200627 A TW201200627 A TW 201200627A TW 100112762 A TW100112762 A TW 100112762A TW 100112762 A TW100112762 A TW 100112762A TW 201200627 A TW201200627 A TW 201200627A
Authority
TW
Taiwan
Prior art keywords
processing chamber
processing
temperature
susceptor
heating
Prior art date
Application number
TW100112762A
Other languages
Chinese (zh)
Other versions
TWI496938B (en
Inventor
Johannes Kaeppeler
Original Assignee
Aixtron Se
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Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Publication of TW201200627A publication Critical patent/TW201200627A/en
Application granted granted Critical
Publication of TWI496938B publication Critical patent/TWI496938B/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

The invention relates to a method for treating, in particular coating, workpieces, in particular semiconductor substrates (19), in a process chamber (4) of a reactor housing (1, 2, 3), said chamber forming a process chamber floor (9) comprising a susceptor (5) for receiving the workpieces and that can be heated by a heating device (15) and a process chamber ceiling (10) that can be cooled by a cooling device (23), wherein the process chamber height (H), defined by the distance between the process chamber ceiling (10) and the process chamber floor (9), is variable, wherein the susceptor is heated from a loading/unloading temperature at which the workpieces are loaded/unloaded into or out of the susceptor (5) to a process temperature in a heating step, the workpieces are heat-treated at the process temperature in a treatment step subsequent to the heating step, and the susceptor is subsequently cooled down to the loading/unloading temperature in a cooling step. In order to reduce cycle times, the process chamber height (H) takes on a minimum value during the cooling step.

Description

201200627 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種處理 理室内對㈣是半導似^ 财在反應11殼體之處 乂 土板之工件進行鍍覆的方法，該處理 至成一個可被加熱襄置加熱且具有用於容置工件的基座 部、及—個可被冷卻裝置冷卻的處理室頂部，1 中’、由處理室頂部與該處理室底部之間距所界定的處理室高 又為可支&八中’在加熱步驟中，將基座自裝料，卸料溫 度（即，為處理室|卸工件時的溫度)加熱至處理溫度，在隨 後的處理步驟中，在處理溫度下對該等巧進行熱處理，而 後在一冷卻步驟中’將基座冷卻至裝料/卸料溫度。 【先前技術】 DE1〇2H獅A1揭示一種利用M〇cv时法將半導體層 沈積於半導體基板上的裝置。魏置具有反應器殼體，此反 應器成體内《有進氣機構及基座^進氣機構底面與基座頂面 之縣處理室。處理氣體可經由處理室頂部上的開口進入處 理至。基座上放有待鍍覆的基板。為f現㈣，反應氣體或 不同的反應氣體㈣主要在賊㈣絲絲發生熱解。其 反應產物’即III及v主族元素，於基板表面形成一層，而 此層為單aa基板之蟲晶層^基座由力α熱裝置自下方加熱。可 垂直地移動基座，以改變處理室高度。 【發明内容】 100112762 201200627 本發明之目的在於縮短沈積製程週期。 本發明用以達成上述目的之解決方案即為本發明之申枝 專利範圍。 在明顯低於處理溫度且可大於等於l〇(TC的裝料/卸料、w 度下打開反應器殼體蓋後’為處理室骏载基板。隨後，關閉 反應器殼體’並用沖洗氣體沖洗處理室。在加熱步驟中，將 基座加熱至高於裝料/卸料溫度數百。C的處理溫度。在處理 步驟中，將處理氣體送入處理室，以便實施熱處理。處理步 驟結束後，實施冷卻步驟，將處理室及基座冷卻至裝料/卸 料溫度。達到此溫度後，可打開反應器殼體，以便取出經處 理的基板，並代之以待處理的基板。本發明係藉由在加熱階 段使基座與已冷卻的處理室頂部之間達到最大距離，來縮短 處理週期。藉此，將自被加熱的基座至已冷卻的處理室頂部 之傳熱程度降至最低。尤佳地，在加熱過程中，經由一個構 成處理至頂部的進氣機構，送入一種導熱性能較差的沖洗氣 體(例如，氮氣）。實施處理步驟時，將處理室高度調節至適 於處理的最佳值。此項處理可針對工件（尤其是基板)之純熱 處理。較佳地，在實施該處理步驟時，將由一或多種成分構 成的處理軋體，經由進氣機構之進氣口送入處理室，而該處 理氣體在基板表面發生化學反應，並形成一半導體層。為 此，該處理氣體較佳含有III主族金屬之有機金屬成分、及 V主族元素之氫化物。處理室高度在冷卻處理過程中取最小 100112762 4 201200627 值。在此過程中，尤佳用一種導熱性能良好的沖洗氣體（例 如’氫氣）沖洗處理室高度。此措施使得自待冷卻的基座至 已冷卻的處理室頂部之傳熱達到最大程度。根據一種尤佳實 施方案’在處理室内部，於低壓條件下實施MOCVD處理。 車父佳用紅外線加熱裝置或射頻加熱裝置，自下方加熱石墨製 的基座。較佳用一個執行機構垂直地移動基座及基座之加熱 裝置，以此來改變處理室高度。該執行機構可位於反應器殼 體内部，而較佳由一個主轴傳動裝置所構成。基座可圍繞著 佈置於反應器殼體中心的軸線而旋轉。處理室頂部較佳由進 氣機構之出氣面所構成，且具有多個可供冷卻劑穿過的冷卻 通道。 特疋s之’本發明係有關於一種在反應器殼體之處理室中 將至少一層沈積於至少一個基板上的方法，該處理室包括一 個用於容置至少-個基板的基座、及—個可被冷卻裝置冷卻 的處理室頂部，該基座係構成處理室之底部，且可被加熱裝 置所加熱’其中’處理室頂部與處理室底部之間距界定出處 理室=度’而該處理室高度可在—最小值與—不同於該最小 值的最大值之間變化，此方法包含以下步驟： -將基座調節至裝料/卸料溫度； -在裝料/卸料溫度下，為基座裝載至少一個基板； :將基座自裝料/卸料溫度加熱至高於裳料/卸料溫度的處 理溫度’在此期間，處理室高度取其最大值； 100112762 5 201200627 -在處理溫度下，將處理氣體送入處理室並使其發生分 解，以便將至少一層沈積於至少一個基板上，在此期間，處 理室高度處於其最大值與最小值之間； -將基座自處理溫度冷卻至裝料/卸料溫度’在此期間*處 理室高度取其最小值，且處理室頂部得到冷卻； ••在裝料/卸料溫度下，為處理室卸料。 【實施方式】 下文將藉由圖1所示之反應器殼體剖面圖對本發明之實 施例進行說明。 反應器殼體係由反應器殼體蓋1、反應器殼體底3、及反 應器殼體壁2所構成。反應器殼體壁2可呈管狀。可用一個 未圖示的真空裝置將殼體内部抽空，抑或使其處理室壓力保 持低於大氣壓力之水平。 進氣機構7固定於殼體蓋1上，由進氣管21為該進氣機 構提供沖洗氣體或處理氣體。進氣機構7由一個優質鋼所製 的中空體所構成，在此中空體内，進氣管21之出口前面設 有擋板20。進氣機構7之底面構成出氣板，而該出氣板具 有多個呈篩狀佈置的出氣口 8。出氣板朝之向下方的外表面 構成處理室頂部10。出氣口 8之間設有可供液態冷卻劑（例 如，水）穿過的冷卻通道23，以便對處理室頂部10進行冷 卻。 進氣機構7下方設有一基座5，其頂面與進氣機構7之出 100112762 6 201200627 氣板平行，且構成處理室底部9。進氣機構7與基座5之間 為處理室4。圓盤形的基座5之直徑可大於3〇 cm。 基座5由位於處理室4之中心軸6上的支柱22所支承。 支柱22可受到旋轉驅動’以便基座5在鑛覆處理過程中圍 繞轴線6而旋轉。 基座5下方設有托板17，該托板可由石英構成，且載有 一個具有多個出氣口 18的出氣環16，而該出氣環則與未圖 示的真空裝置相連接。 基座5及托板17下方設有加熱盤管15，而該加熱盤管可 產生射頻場(RF-field)’以在石墨製的基座$中感應誘發渦 電流’藉此’將基座5加熱至處理溫度。 設有多個執行機構11，其皆具有：主軸傳動裝置13、可 由主軸傳動裝置13旋轉驅動的主軸12、及佈置於托板17 上的主軸螺母14。藉由執行機構n，可改變基座5、托板 17、及加熱裝置15之垂直位置。 因此，藉由執行機構11，可使處理室高度H在一最小值 與-最大值之«化高度H可在4腿與5()麵之間變 化。通常情況下’基座之直捏至少為3〇 cm，最大為65〇cm。 利用上述裝置可實施以下處理方法： 在介於室溫與200C至3〇〇°C之間的裝料/卸料溫度下，打 開反應器殼體’例如’掀起反應器殼體蓋丄。由於進氣機構 7係固定在反應5殼體蓋！上，所以，反應器殼體蓋工被打 100112762 7 201200627 開後’便可暢通無阻地為基座5裝載基板19。將待錢覆的 基板19放置到基板5上後，重新關閉處理室殼體。用沖洗 氣體(例如’氮氣）沖洗處理室扣用執行機構η將基座5連 同加熱裝置15調節至最低位置，此時，處理室高度η取其 最大值(例如，不小於7㈣。在此位置上（此時，自基座至 已冷卻的處理至頂之傳熱程度降至最低），將基座5加 熱至高於_°c甚至高於讓t之處理溫度。 將處理氣體經由進氣管21送入進氣機構7，並經由出氣 口 8進步送入處理室4,由此啟動用以沈積半導體層於基 板19上的生長製程。 生長步驟、纟°束後’用沖洗氣體(此時可為氫氣)沖洗處理室 4mi#基座5#直地向上調節至最高位置，血 時’處理室高度Η取其最小值。該最小值例如不大於2cm 斷開加熱裝置15並用冷卻劑冷卻處理室頂部⑺之後，基座 5溫度下降，而由於沖洗氣體導熱性能良好且基座咖 頂部之間達到最小距離，故而，此時自基座5至已冷卻的處 理室頂部10之傳熱達到最大程度。 =料:=度後，將氣氣送入處理室並打開編 殼體盍1 ’以便更換基板。 所有已揭示特徵（自身即)為發明本質 揭示内容亦所㈣先«案 示之全部内谷，該等槽衆张、+ /、斤述特敛亦—併納入本申請之申讀 100112762 8 201200627 專利範圍。附屬項採用可選並列措辭對本發明針對先前技術 之改良方案的特徵予以說明，其目的主要在於可在該等請求 項基礎上進行分案申請。 【圖式簡單說明】 圖1為反應器殼體之剖面圖。 【主要元件符號說明】 1 (反應器）殼體蓋；反應器殼體 2 (反應器）殼體壁；反應器殼體 3 (反應器）殼體底；反應器殼體 4 處理室 5 基座 6 轴線；中心軸 7 進氣機構 8 出氣口 9 處理室底部 10 處理室頂部 11 執行機構 12 主轴 13 主軸傳動裝置 14 主軸螺母 15 加熱裝置；加熱盤管 16 出氣環 100112762 9 201200627 17 18 19 20 21 22 23 Η 托板 出氣口 (半導體)基板 擋板 進氣管 支柱 冷卻通道；冷卻裝置 (處理室）高度 100112762 10201200627 VI. Description of the Invention: [Technical Field] The present invention relates to a method for processing a workpiece in a processing chamber (4) which is a semi-conductive material of a bauxite plate in a reaction housing 11 To a top portion of the processing chamber that can be heated by heating and has a workpiece for accommodating the workpiece, and a top portion of the processing chamber that can be cooled by the cooling device, 1 in the distance between the top of the processing chamber and the bottom of the processing chamber The defined processing chamber is high and can be supported. In the heating step, the susceptor is self-charged, and the discharge temperature (ie, the temperature at which the processing chamber is unloaded) is heated to the processing temperature, in the subsequent In the processing step, the heat treatment is performed at the processing temperature, and then the susceptor is cooled to the charging/discharging temperature in a cooling step. [Prior Art] DE1〇2H Lion A1 discloses a device for depositing a semiconductor layer on a semiconductor substrate by means of M〇cv. Wei set has a reactor shell, and the reactor is in the body of the county processing room with the air intake mechanism and the base of the air intake mechanism and the top surface of the base. Process gas can be treated via an opening in the top of the processing chamber. A substrate to be plated is placed on the susceptor. For f (4), the reaction gas or different reaction gases (4) are mainly pyrolyzed in the thief (four) filament. The reaction product, i.e., the III and v main group elements, forms a layer on the surface of the substrate, and this layer is a single aa substrate of the insect layer. The susceptor is heated from below by a force alpha thermal device. The pedestal can be moved vertically to change the height of the process chamber. SUMMARY OF THE INVENTION 100112762 201200627 The object of the present invention is to shorten the deposition process cycle. The solution to achieve the above object of the present invention is the scope of the patent application of the present invention. After the reactor temperature is significantly lower than the treatment temperature and can be greater than or equal to 10 ° (charge/discharge of TC, open the reactor housing cover after the 'degree of time), it is the processing chamber. Then, the reactor housing is closed and the flushing gas is used. Flushing the processing chamber. In the heating step, the susceptor is heated to a processing temperature higher than the loading/unloading temperature by several hundred C. In the processing step, the processing gas is sent to the processing chamber to perform the heat treatment. Cooling step is performed to cool the processing chamber and the susceptor to the charging/discharging temperature. After reaching this temperature, the reactor housing can be opened to take out the treated substrate and replace it with the substrate to be processed. The processing cycle is shortened by maximizing the distance between the susceptor and the top of the cooled processing chamber during the heating phase, thereby reducing the degree of heat transfer from the heated susceptor to the top of the cooled processing chamber. Preferably, during the heating process, a flushing gas (for example, nitrogen) having poor thermal conductivity is fed through an air intake mechanism constituting the treatment to the top. When the processing step is performed, the processing chamber is processed. The height is adjusted to an optimum value suitable for processing. This treatment can be applied to the pure heat treatment of the workpiece (especially the substrate). Preferably, when the treatment step is carried out, the treated rolled body composed of one or more components is passed through The gas inlet of the gas mechanism is sent to the processing chamber, and the processing gas chemically reacts on the surface of the substrate to form a semiconductor layer. For this reason, the processing gas preferably contains the organometallic component of the main group III metal and the V main group. Hydride of the element. The height of the process chamber is taken to a minimum of 100112762 4 201200627 during the cooling process. In this process, it is preferred to flush the chamber height with a well-heating flushing gas (eg 'hydrogen'). The heat transfer from the cooled susceptor to the top of the cooled processing chamber is maximized. According to a preferred embodiment, the MOCVD process is carried out under low pressure conditions inside the processing chamber. The vehicle owner uses an infrared heating device or a radio frequency heating device. Heating the base made of graphite from below. It is better to use a heating mechanism that moves the base and the base vertically by an actuator. Processing chamber height. The actuator may be located inside the reactor housing and preferably consists of a spindle drive. The base is rotatable about an axis disposed at the center of the reactor housing. The outlet surface of the gas mechanism is formed and has a plurality of cooling passages through which the coolant can pass. The present invention relates to depositing at least one layer on at least one substrate in a processing chamber of the reactor housing. In the above method, the processing chamber includes a susceptor for accommodating at least one substrate, and a top of a processing chamber which can be cooled by a cooling device, the pedestal constituting the bottom of the processing chamber, and can be heated by the device The heating 'where' the distance between the top of the processing chamber and the bottom of the processing chamber defines a processing chamber = degree ' and the processing chamber height may vary between a minimum value and a maximum value different from the minimum value, the method comprising the steps of: - adjusting the susceptor to the loading/unloading temperature; - loading at least one substrate for the susceptor at the loading/unloading temperature; : heating the susceptor from the loading/unloading temperature to above the opening/unloading temperature Processing temperature ' during this period, the processing chamber height takes its maximum value; 100112762 5 201200627 - at the processing temperature, the processing gas is sent to the processing chamber and decomposed to deposit at least one layer on at least one substrate, During this time, the process chamber height is between its maximum and minimum values; - the base is cooled from the process temperature to the charge/discharge temperature' during which the process chamber height is taken to its minimum and the top of the process chamber is obtained Cooling; • Discharge the process chamber at the loading/unloading temperature. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to a cross-sectional view of a reactor casing shown in Fig. 1. The reactor housing is composed of a reactor housing cover 1, a reactor housing bottom 3, and a reactor housing wall 2. The reactor housing wall 2 can be tubular. The inside of the casing can be evacuated by a vacuum device (not shown), or the pressure in the process chamber can be kept below atmospheric pressure. The intake mechanism 7 is fixed to the casing cover 1, and the intake pipe 21 supplies flushing gas or process gas to the air intake mechanism. The air intake mechanism 7 is constituted by a hollow body made of high-quality steel, and a baffle 20 is provided in front of the outlet of the intake pipe 21 in the hollow body. The bottom surface of the air intake mechanism 7 constitutes an air outlet plate, and the air outlet plate has a plurality of air outlets 8 arranged in a sieve shape. The outer surface of the air outlet plate toward the lower side constitutes the top 10 of the processing chamber. A cooling passage 23 through which a liquid coolant (e.g., water) passes is provided between the air outlets 8 to cool the top 10 of the processing chamber. Below the air intake mechanism 7, a base 5 is provided, the top surface of which is parallel to the air plate of the air intake mechanism 7 and the bottom plate 9 of the process chamber. Between the intake mechanism 7 and the susceptor 5 is a processing chamber 4. The disc-shaped base 5 may have a diameter greater than 3 cm. The base 5 is supported by posts 22 located on the central axis 6 of the processing chamber 4. The struts 22 can be rotationally driven 'so that the susceptor 5 rotates about the axis 6 during the ore cover process. Below the susceptor 5 is provided a pallet 17, which may be constructed of quartz and which carries an air outlet ring 16 having a plurality of air outlets 18 which are connected to a vacuum device not shown. A heating coil 15 is disposed under the base 5 and the pallet 17, and the heating coil can generate an RF-field to induce an induced eddy current in the graphite base $. 5 Heat to the processing temperature. A plurality of actuators 11 are provided, each having a spindle transmission 13, a spindle 12 rotatably drivable by the spindle transmission 13, and a spindle nut 14 disposed on the pallet 17. The vertical position of the base 5, the pallet 17, and the heating device 15 can be changed by the actuator n. Therefore, by the actuator 11, the process chamber height H can be varied between the 4th and 5() faces at a minimum and a maximum value. Usually, the straightness of the pedestal is at least 3 〇 cm and the maximum is 65 〇 cm. The following treatments can be carried out using the apparatus described above: The reactor housing is opened, e.g., the reactor housing cover is opened, at a charge/discharge temperature between room temperature and 200 C to 3 °C. Since the air intake mechanism 7 is fixed in the reaction 5 housing cover! Therefore, the reactor casing cover is opened 100112762 7 201200627, and the substrate 19 can be loaded unimpeded for the base 5. After the substrate 19 to be covered is placed on the substrate 5, the process chamber casing is closed again. Flushing the process chamber with the flushing gas (for example, 'nitrogen gas) to rotate the base 5 together with the heating device 15 to the lowest position, at which time the processing chamber height η takes its maximum value (for example, not less than 7 (four). In this position Upper (at this time, the degree of heat transfer from the susceptor to the cooled process to the top is minimized), the susceptor 5 is heated to a temperature higher than _°c or even higher than the processing temperature of let t. The process gas is passed through the intake pipe 21 is fed into the air intake mechanism 7 and advanced into the processing chamber 4 via the air outlet 8, thereby starting a growth process for depositing the semiconductor layer on the substrate 19. After the growth step, after the beam, the flushing gas is used. The hydrogen processing chamber 4mi# base 5# is directly adjusted upward to the highest position, and the blood processing chamber height is drawn to its minimum value. The minimum value is, for example, not more than 2 cm. The heating device 15 is disconnected and cooled by the coolant. After the top of the chamber (7), the temperature of the susceptor 5 drops, and since the flushing gas has good thermal conductivity and a minimum distance between the tops of the pedestal coffee, the heat transfer from the susceptor 5 to the cooled processing chamber top 10 is maximized. Degree. = material: = After that, the gas is sent to the processing chamber and the shell 盍 1 ' is opened to replace the substrate. All the disclosed features (self) are the essence of the invention. (4) First, all the valleys of the case, the tanks Zhang, +/-, and jin are also included in the scope of the application of the application 100112762 8 201200627. The accessory uses optional side-by-side wording to describe the features of the prior art improvement of the prior art, the main purpose of which is The request is based on the divisional application. [Simplified illustration of the drawing] Figure 1 is a cross-sectional view of the reactor housing. [Main component symbol description] 1 (reactor) housing cover; reactor housing 2 (reaction) Housing wall; reactor housing 3 (reactor) housing bottom; reactor housing 4 processing chamber 5 base 6 axis; central shaft 7 air intake mechanism 8 air outlet 9 processing chamber bottom 10 processing chamber top 11 Actuator 12 Spindle 13 Spindle drive 14 Spindle nut 15 Heating device; Heating coil 16 Outlet ring 100112762 9 201200627 17 18 19 20 21 22 23 托 Pallet outlet (semiconductor) substrate Intake pipe cooling channel plate struts; cooling device (processing chamber) height 10,011,276,210

Claims (1)

201200627 七、申5青專利範圍： 1. 一種特別是在反應器殼體（1，2 ’ 3)之處理室（4)内對多 個特別是半導體基板(19)之工件進行鍍覆的處理方法，該處 理室構成一個可被加熱裝置（15)加熱且具有用於容置該等 工件的基座（5)的處理室底部（9)、及一個可被冷卻裝置(23) 冷卻的處理室頂部（10)，其中，由處理室頂部（1〇)與處理室 底部(9)之間距所界定的處理室高度(Η)為可變的，其中，在 加熱步驟中’將基座（5)自處理室裝卸該等工件時的裝料/卸 料溫度加熱至處理溫度，在隨後的處理步驟中，在處理溫度 下對該等工件進行熱處理，而後在冷卻步驟中，將基座冷卻 至裝料/卸料溫度，其特徵在於： 處理室高度(Η)在加熱步驟中取一最大值，以便將自被加 熱的基座（5)至已冷卻的處理室頂部（1〇)之傳熱最大化，而在 冷卻步驟中取一最小值，以便將自被冷卻的基座（5)至已冷 卻的處理室頂部之傳熱最大化，其中，流向處理室頂部（10) 的熱量係由冷卻裝置(23)所導散。 2. 如申請專利範圍第1項之處理方法，其中，在該處理步 驟中’藉由構成該處理室頂部（1〇)的進氣機構(7)，將處理氣 體送入該處理室（4)，而處理氣體係在放置於該基座（5)上的 至少一個基板（19)上，透過化學反應或凝結作用形成為一 層。 3_如申請專利範圍第1項之處理方法，其中，在該加熱步 100112762 11 201200627 驟中，將諸如氮氣之類的導熱性能較差的沖洗氣體經由進氣 機構(7)送入處理室（4)。 4. 如申請專利範圍第1項之處理方法，其中，在該冷卻步 驟中，將諸如氫氣之類的導熱性能良好的處理氣體經由進氣 機構(7)送入處理室（4)。 5. 如申請專利範圍第1項之處理方法，其中，該處理步驟 為MOCVD沈積製程。 6. 如申請專利範圍第1項之處理方法，其中，在低於1000 mbar的處理室壓力下實施該處理步驟。 7. 如申請專利範圍第1項之處理方法，其中，利用射頻加 熱裝置（15)或紅外線加熱裝置為石墨製的基座（5)調溫。 8. 如申請專利範圍第1項之處理方法，其中，用流經諸冷 卻通道(23)的液態冷卻劑冷卻該處理室頂部。 9. 如申請專利範圍第1項之處理方法，其中，藉由執行機 構（11)，使該基座（5)連同該加熱裝置（15)垂直地發生相對於 該反應器殼體（1，2,3)的位移，以達到改變該處理室高度(H) 之目的。 10. 如申請專利範圍第1項之處理方法，其中，圓盤形的 基座（5)之直徑至少為30 cm，與該處理室頂部之最小間距不 超過2 cm，最大間距不低於7 cm。 11. 一種在一反應器殼體（1，2，3)之處理室（4)中將至少一 層沈積於至少一個基板（19)上的方法，該處理室包括一個用 100112762 12 201200627 於容置至少一個基板（19)的基座（5)、及一個可被冷卻裝置 (23)冷卻的處理室頂部（1〇)，該基座係構成處理室（句之底部 (9) ’且可被加熱裝置（15)所加熱，其中，處理室頂部（1〇)與 處理至底部（9)之間距界定出處理室高度(H)，而該處理室高 度可在一最小值與一不同於該最小值的最大值之間變化，此 方法包含以下步驟： 將基座(5)調節至裝料/卸料溫度； 在裝料/卸料溫度下，為基座(5)裝載至少一個基板（19); 將基座（5)自裝料/卸料溫度加熱至高於裝料/♦卩料溫度的 處理溫度，在此期間，處理室高度(H)取其最大值； 在處理溫度下，將處理氣體送入處理室（4)並使其發生分 解，以便將至少一層沈積於至少一個基板上，在此期 間，處理室高度(H)處於其最大值與最小值之間； 將基座(5)自處理溫度冷卻至裝料/卸料溫度，在此期間， 處理室高度(H)取其最小值，且處理室頂部（1〇)得到冷卻； 在裝料/卸料溫度下，為處理室（4)卸料。 12.如申請專利範圍第u項之方法，其中，在加熱基座及 處理諸工件的過程中，冷卻該處理室頂部（10)。 100112762 13201200627 VII, Shen 5 Qing patent range: 1. A treatment of a plurality of workpieces, in particular semiconductor substrates (19), in particular in the processing chamber (4) of the reactor housing (1, 2 ' 3) Method, the processing chamber constitutes a processing chamber bottom (9) which can be heated by the heating device (15) and has a base (5) for accommodating the workpieces, and a treatment which can be cooled by the cooling device (23) a chamber top (10), wherein the height of the processing chamber (Η) defined by the distance between the top of the processing chamber (1〇) and the bottom of the processing chamber (9) is variable, wherein the base is (in the heating step) 5) heating/unloading temperature of the workpiece from the processing chamber to the processing temperature, in the subsequent processing step, heat treating the workpiece at the processing temperature, and then cooling the susceptor in the cooling step To the loading/unloading temperature, characterized in that the processing chamber height (Η) takes a maximum value in the heating step so as to be from the heated base (5) to the top of the cooled processing chamber (1〇) Maximize heat transfer and take a minimum value during the cooling step so that it will be cold Maximum heat transfer at the top of the base (5) has been cooled to a process chamber, wherein the top of the heat (10) the flow of the processing chamber be dissipated by the Department of the cooling device (23). 2. The processing method of claim 1, wherein in the processing step, the processing gas is sent to the processing chamber by the air intake mechanism (7) constituting the top (1〇) of the processing chamber (4) And the treatment gas system is formed as a layer by chemical reaction or coagulation on at least one substrate (19) placed on the susceptor (5). 3_ The processing method of claim 1, wherein in the heating step 100112762 11 201200627, a flushing gas having poor thermal conductivity such as nitrogen is sent to the processing chamber via the intake mechanism (7) (4) ). 4. The processing method of claim 1, wherein in the cooling step, a process gas having good thermal conductivity such as hydrogen is supplied to the process chamber (4) via the intake mechanism (7). 5. The method of claim 1, wherein the processing step is an MOCVD deposition process. 6. The method of claim 1, wherein the processing step is carried out at a process chamber pressure of less than 1000 mbar. 7. The method of claim 1, wherein the radiant (5) made of graphite is tempered by a radio frequency heating device (15) or an infrared heating device. 8. The method of claim 1, wherein the top of the processing chamber is cooled by a liquid coolant flowing through the cooling channels (23). 9. The method of claim 1, wherein the susceptor (5), along with the heating device (15), occurs perpendicularly to the reactor housing (1, by the actuator (11). 2, 3) displacement to achieve the purpose of changing the height (H) of the processing chamber. 10. The method of claim 1, wherein the disc-shaped base (5) has a diameter of at least 30 cm, a minimum spacing of no more than 2 cm from the top of the processing chamber, and a maximum spacing of not less than 7 Cm. 11. A method of depositing at least one layer on at least one substrate (19) in a processing chamber (4) of a reactor housing (1, 2, 3), the processing chamber comprising a housing for use with 100112762 12 201200627 a base (5) of at least one substrate (19), and a top (1〇) of a processing chamber that can be cooled by a cooling device (23), the base forming a processing chamber (the bottom of the sentence (9)' and can be Heating by the heating device (15), wherein the distance between the top of the processing chamber (1〇) and the processing to the bottom (9) defines a processing chamber height (H), and the processing chamber height can be different from the minimum Between the maximum values of the minimum values, the method comprises the steps of: adjusting the susceptor (5) to the loading/unloading temperature; loading at least one substrate for the susceptor (5) at the loading/unloading temperature ( 19); heating the susceptor (5) from the loading/unloading temperature to a processing temperature higher than the charging/♦king temperature, during which the processing chamber height (H) is taken as its maximum value; at the processing temperature, The process gas is sent to the processing chamber (4) and decomposed to deposit at least one layer on at least one of the substrates Above, during this period, the processing chamber height (H) is between its maximum and minimum values; the susceptor (5) is cooled from the processing temperature to the charging/discharging temperature, during which the processing chamber height (H) Taking the minimum value, and the top of the processing chamber (1〇) is cooled; at the loading/unloading temperature, the processing chamber (4) is discharged. 12. The method of claim 5, wherein, in the heating During the susceptor and processing of the workpieces, the top (10) of the processing chamber is cooled. 100112762 13
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