TW201144944A - Positive type resist composition and method for producing microlens - Google Patents

Positive type resist composition and method for producing microlens

Info

Publication number
TW201144944A
TW201144944A TW100102644A TW100102644A TW201144944A TW 201144944 A TW201144944 A TW 201144944A TW 100102644 A TW100102644 A TW 100102644A TW 100102644 A TW100102644 A TW 100102644A TW 201144944 A TW201144944 A TW 201144944A
Authority
TW
Taiwan
Prior art keywords
resist composition
group
type resist
positive type
alkali
Prior art date
Application number
TW100102644A
Other languages
English (en)
Other versions
TWI548943B (zh
Inventor
Shojiro Yukawa
Shinya Arase
Toshiaki Takeyama
Yuki Endo
Takeo Moro
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201144944A publication Critical patent/TW201144944A/zh
Application granted granted Critical
Publication of TWI548943B publication Critical patent/TWI548943B/zh

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0012Arrays characterised by the manufacturing method
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D405/00Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
    • C07D405/02Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
    • C07D405/06Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D405/00Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
    • C07D405/14Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
TW100102644A 2010-01-26 2011-01-25 正型光阻組成物及微透鏡之製造方法 TWI548943B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010014505 2010-01-26

Publications (2)

Publication Number Publication Date
TW201144944A true TW201144944A (en) 2011-12-16
TWI548943B TWI548943B (zh) 2016-09-11

Family

ID=44319178

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100102644A TWI548943B (zh) 2010-01-26 2011-01-25 正型光阻組成物及微透鏡之製造方法

Country Status (7)

Country Link
US (1) US8722311B2 (zh)
EP (1) EP2530524B1 (zh)
JP (1) JP5673963B2 (zh)
KR (1) KR101852523B1 (zh)
CN (1) CN102725691B (zh)
TW (1) TWI548943B (zh)
WO (1) WO2011093188A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8940470B2 (en) * 2007-05-17 2015-01-27 Nissan Chemical Industries, Inc. Photosensitive resin and process for producing microlens
CN102317343B (zh) * 2009-02-10 2013-07-31 日产化学工业株式会社 含有长链亚烷基的环氧化合物
EP2530098A4 (en) * 2010-01-26 2015-09-09 Nissan Chemical Ind Ltd HARDENABLE EPOXY RESIN COMPOSITION WITH LOW-CHAIN ALKYLENE
DE102010028062A1 (de) * 2010-04-22 2011-10-27 Evonik Degussa Gmbh Verfahren zur Herstellung vernetzter organischer Polymere
JP5804282B2 (ja) * 2010-08-05 2015-11-04 日産化学工業株式会社 窒素含有環を有するエポキシ化合物
KR101734189B1 (ko) 2010-08-05 2017-05-11 닛산 가가쿠 고교 가부시키 가이샤 시아누르산 골격을 갖는 에폭시 화합물의 제조방법
KR101252063B1 (ko) 2011-08-25 2013-04-12 한국생산기술연구원 알콕시실릴기를 갖는 에폭시 화합물, 이의 제조 방법, 이를 포함하는 조성물과 경화물 및 이의 용도
EP2762517A4 (en) * 2011-09-29 2015-05-06 Nissan Chemical Ind Ltd LIGHT-CURING RESIN COMPOSITION
KR101456025B1 (ko) * 2011-11-01 2014-11-03 한국생산기술연구원 알콕시실릴기를 갖는 이소시아누레이트 에폭시 화합물, 이의 제조 방법 및 이를 포함하는 조성물과 경화물 및 이의 용도
KR101992845B1 (ko) 2012-03-14 2019-06-27 한국생산기술연구원 알콕시실릴기를 갖는 에폭시 화합물, 이를 포함하는 조성물, 경화물, 이의 용도 및 알콕시실릴기를 갖는 에폭시 화합물의 제조방법
EP2835373B1 (en) 2012-04-02 2019-09-11 Korea Institute of Industrial Technology Epoxy compound having alkoxysilyl group, composition and hardened material comprising same, use for same, and production method for epoxy compound having alkoxysilyl group
KR101863111B1 (ko) 2012-07-06 2018-06-01 한국생산기술연구원 노볼락계 에폭시 화합물, 이의 제조 방법, 이를 포함하는 조성물, 경화물 및 이의 용도
US9464074B2 (en) * 2012-10-25 2016-10-11 Nissan Chemical Industries, Ltd. Method for producing epoxy compound
KR102229661B1 (ko) * 2013-10-21 2021-03-18 닛산 가가쿠 가부시키가이샤 포지티브형 감광성 수지 조성물
KR20150068899A (ko) * 2013-12-12 2015-06-22 제이엔씨 주식회사 포지티브형 감광성 조성물
EP3034527B1 (de) 2014-12-19 2017-05-31 Evonik Degussa GmbH Covernetzersysteme für Verkapselungsfolien umfassend Bis-(alkenylamid)-Verbindungen
CN104892586B (zh) * 2015-05-31 2017-05-10 黄山华惠科技有限公司 制备异氰脲酸三缩水甘油酯的新方法
KR20190056088A (ko) * 2017-11-16 2019-05-24 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
KR20210052452A (ko) 2018-08-30 2021-05-10 닛산 가가쿠 가부시키가이샤 네가티브형 감광성 수지조성물
KR102232340B1 (ko) 2019-11-15 2021-03-26 한국생산기술연구원 알콕시실릴기를 갖는 에폭시 수지의 조성물 및 이의 복합체
CN114945611A (zh) * 2020-02-03 2022-08-26 太阳油墨制造株式会社 固化性组合物、其干膜和固化物

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101264A (en) 1988-03-31 1992-03-31 Mitsui Petrochemical Ind. Light-emitting or receiving device with smooth and hard encapsulant resin
JPH01251745A (ja) * 1988-03-31 1989-10-06 Mitsui Petrochem Ind Ltd 発光または受光装置および発光または受光素子用封止剤
JPH04166944A (ja) * 1990-10-31 1992-06-12 Mitsubishi Kasei Corp 感光性樹脂組成物
JPH0695386A (ja) * 1992-09-11 1994-04-08 Tosoh Corp マイクロレンズ用ポジ型感光材料
JP3482753B2 (ja) * 1994-11-28 2004-01-06 日産化学工業株式会社 粉体塗料用樹脂組成物
CN1073603C (zh) * 1994-11-28 2001-10-24 日产化学工业株式会社 用于粉末涂料的树脂组合物
SE9704643D0 (sv) * 1997-12-12 1997-12-12 Astra Ab Inhalation apparatus and method
CN1237400C (zh) * 2001-09-27 2006-01-18 Az电子材料(日本)株式会社 感光树脂组合物
WO2003087941A1 (fr) * 2002-04-18 2003-10-23 Nissan Chemical Industries, Ltd. Composition de resine positivement photosensible et procede de formation de motifs
JP4692219B2 (ja) * 2004-10-29 2011-06-01 Jsr株式会社 ポジ型感光性絶縁樹脂組成物およびその硬化物
DE602005021812D1 (de) * 2004-10-29 2010-07-22 Jsr Corp Positiv lichtempfindliche isolierende harzzusammensetzung und ausgehärtetes produkt davon
JP2008007782A (ja) * 2006-06-27 2008-01-17 Lumination Llc オプトエレクトロニックデバイス
US20070295983A1 (en) 2006-06-27 2007-12-27 Gelcore Llc Optoelectronic device
US20070299162A1 (en) 2006-06-27 2007-12-27 Gelcore Llc Optoelectronic device
US20070295956A1 (en) 2006-06-27 2007-12-27 Gelcore Llc Optoelectronic device
US7745104B2 (en) * 2006-08-10 2010-06-29 Shin-Etsu Chemical Co., Ltd. Bottom resist layer composition and patterning process using the same
JP4823959B2 (ja) * 2006-08-10 2011-11-24 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
JP4973876B2 (ja) * 2007-08-22 2012-07-11 信越化学工業株式会社 パターン形成方法及びこれに用いるパターン表面コート材
EP2216355A4 (en) * 2007-11-29 2012-07-18 Nissan Chemical Ind Ltd EPOXY CURING AGENT CONTAINING SILICA AND EPOXY RESIN CURED BODY
JP5158430B2 (ja) * 2008-06-23 2013-03-06 Dic株式会社 エポキシ化合物及びエポキシ硬化物
EP2302456B1 (en) * 2008-07-16 2015-09-02 Nissan Chemical Industries, Ltd. Positive resist composition;patttern forming method; microlens and planarization film therefrom; solid-state imaging device, liquid crystal display device and led display device comprising the same
CN102317343B (zh) * 2009-02-10 2013-07-31 日产化学工业株式会社 含有长链亚烷基的环氧化合物
JP5515399B2 (ja) * 2009-05-12 2014-06-11 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、硬化膜、パターン硬化膜の製造方法及び電子部品

Also Published As

Publication number Publication date
JPWO2011093188A1 (ja) 2013-06-06
EP2530524B1 (en) 2019-05-29
WO2011093188A1 (ja) 2011-08-04
KR20120127609A (ko) 2012-11-22
CN102725691B (zh) 2014-06-11
CN102725691A (zh) 2012-10-10
KR101852523B1 (ko) 2018-04-27
TWI548943B (zh) 2016-09-11
US8722311B2 (en) 2014-05-13
JP5673963B2 (ja) 2015-02-18
EP2530524A4 (en) 2015-03-04
US20120292487A1 (en) 2012-11-22
EP2530524A1 (en) 2012-12-05

Similar Documents

Publication Publication Date Title
TW201144944A (en) Positive type resist composition and method for producing microlens
TW200834240A (en) Positive photosensitive resin composition
WO2009034998A1 (ja) 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物
GB201005060D0 (en) Synergists
SG158792A1 (en) Chemically-amplified positive resist composition and patterning process thereof
EP1729176A4 (en) POSITIVELY WORKING RADIATION-SENSITIVE RESIN COMPOSITION
SG160273A1 (en) Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition.
EP2520579A3 (en) A silicone compound, photocurable liquid ink using the silicone compound, and method of manufacturing the ink
WO2009057638A1 (ja) ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
WO2009019574A8 (en) Photoresist composition for deep uv and process thereof
WO2008099709A1 (ja) ポジ型感光性樹脂組成物
EP1975705A3 (en) Positive resist composition and pattern-forming method
WO2007140332A3 (en) Low odor, low volatility solvent for agricultural chemicals
TW200619239A (en) Positive resist composition and method for forming resist pattern
SG191547A1 (en) Water-soluble resin composition and method of forming fine patterns by using the same
IN2014MN02582A (zh)
GB0714671D0 (en) Microbial bioreaction process
TW200834238A (en) Photosensitive resin composition for forming organic insulating film and device using the same
TW200700921A (en) Positive photoresist composition, thick-film photoresist layer laminate, method for forming thick-film resist pattern and method for forming connection terminal
WO2013042973A3 (ko) I-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법
TW200636390A (en) Photosensitive resin composition and color filter using the same
TW200734819A (en) Negative resist composition and patterning process
BR112013004957A2 (pt) composição de eletrólito não aquosa e bateria secundária de eletrólito não aquosa
WO2013181165A3 (en) Conductive polymer for solid electrolytic capacitor
SG160269A1 (en) Polymer for resist and resist composition manufactured using the same