201140086 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種能夠在太陽電池之期望之區域，簡便 且南精度地局部評價光電轉換效率之評價方法及評價裝 【先前技術】 從旎量之有效利用之觀點來看，近年來，太陽電池正越 來越被廣泛普遍地利用。尤其是利用單晶矽之太陽電池， 其每單位面積之能量轉換效率均為優良。但另一方面，由 於利用單晶矽之太陽電池係使用將單晶矽晶錠切片之矽晶 圓，故晶錠之製造會消耗大量能量，製造成本高。尤其2 實現設置於室外等之大面積之太陽電池之情形，若利用單 晶矽製造太陽電池，則以現狀來看相當花費成本。因此， 有利用可更價廉地製造之非晶（非晶質）矽薄膜之太陽電池 作為低成本之太陽電池而逐漸普及。 非晶矽太陽電池，其接受光時產生電子與電洞之非晶矽 膜（i型）係使用由p型及n型矽膜包夾之被稱為pin接合之層 構造之半導體膜。該半導體膜之兩面分別形成有電極。利 用太陽光產生之電子及電洞會根據P型.η型半導體之電位 差而活躍地移動，藉由使其連續地重複而於兩面之電極產 生電位差。 作為如此之非晶矽太陽電池之具體之構成，係採用例如 於玻璃基板上將 TCO(Transparent Conductive Oxide:透明 導電氧化物鍍膜）等之透明電極作為下部電極而成膜，並 152978.doc 201140086 於其上形成有包含非晶石夕之半導體膜、與成為上部電極之201140086 VI. Description of the Invention: [Technical Field] The present invention relates to an evaluation method and evaluation apparatus capable of locally evaluating photoelectric conversion efficiency in a desired region of a solar cell in a simple and south-precision region. From the standpoint of effective use, solar cells are becoming more and more widely used in recent years. In particular, a solar cell using a single crystal germanium has excellent energy conversion efficiency per unit area. On the other hand, since the solar cell using the single crystal germanium uses a twin crystal which is formed by slicing a single crystal twin ingot, the production of the ingot consumes a large amount of energy and the manufacturing cost is high. In particular, in the case of realizing a large-area solar cell installed outdoors, etc., if a solar cell is manufactured using a single crystal crucible, it is costly in the current situation. Therefore, solar cells using amorphous (amorphous) tantalum films which can be manufactured at a lower cost have been widely used as low-cost solar cells. In an amorphous germanium solar cell, an amorphous germanium film (i type) which generates electrons and holes when receiving light is a semiconductor film which is sandwiched by a p-type and n-type germanium film and is called a pin bonded layer structure. Electrodes are formed on both sides of the semiconductor film. The electrons and holes generated by the sunlight are actively moved according to the potential difference of the P-type η-type semiconductor, and the potential difference is generated at the electrodes on both sides by continuously repeating them. As a specific configuration of such an amorphous tantalum solar cell, for example, a transparent electrode such as TCO (Transparent Conductive Oxide) is formed on a glass substrate as a lower electrode, and 152978.doc 201140086 A semiconductor film including amorphous austenite is formed thereon, and is formed as an upper electrode.
Ag薄膜專之構成。 如此之具備包含上下電極與半導體膜之光電轉換體之非 晶碎太陽電池，若僅於基板上以廣泛之面積均—地成膜各 層，則有電位差減小，且電阻值増大之問題。因此，例如 藉由形成以每特定之尺寸電性區劃光電轉換體之區劃元 件，並電性連接相互鄰接之區劃元件，而構成非晶石夕太陽 電池。具體而言，係採用以雷射光等，在以廣泛之面積均 一地形成於基板上之光電轉換體上形成被稱為劃線 (scribeHne)之槽，而獲得多數之條帶狀之區劃元件，並電 性串聯連接該區劃元件之構成。 然而，已知在如此之構造之薄膜太陽電池中，在製造階 & =產生幾個構造缺陷。例如’在薄膜成膜時，有微粒混 入溥膜太陽電池，或產生小孔’因此而存在上部電極與下 部電極局部/豆路之情形。又，亦有於基板上形成光電轉換 體後，在#由劃線將&電轉換體分割《多數之區劃元件 時，有構成上部電極之金屬膜會沿著該劃線溶融而到達至 下部電極’導致上部電極與下部電極因熔融金屬而局部短 路之情形。若如此而短路’則在平行於薄膜面之方向，光 電轉換效率會局部產生變化，並生成不均—之光電轉換效 率之分佈（偏移）。 再者#隨著薄膜太陽電池之大型化，因成膜條件或成 、裝置之狀態’在平行於薄膜面之方向上容易產生不均一 之光電轉換效率之分佈，從而太陽電池之品質容易產生不 152978.doc 201140086 均。 因此’期望開發一種能夠高精度測定光電轉換效率，且 在產生有不均一之光電轉換效率之分佈時，能夠高精度地 確定產生有不均一之分佈之部位之技術。 相對於此’先前係採用例如製作複數個小型之薄膜太陽 電池（微型電池），測定光電轉換效率之方法。如此之方法 係揭示於例如日本特開2009-1 1 1215號公報或日本特開 2004-241449號公報中。 以下，引用圖8A〜圖8F具體說明。圖8A〜圖盯係用於說 明局部測定太陽電池之一部份之光電轉換效率之先前之測 定法的概略剖面圖。 首先，如圖8A所示，於具有光透射性之基板u,上依序 積層第一電極層13(下部電極）及半導體層14，。 其次，如圖8B所示，將用於在半導體層14，上形成具有 期望之圖案之第二電極層15,（上部電極）之掩膜91，藉由圖 案化而形成於半導體層14，上。作為形成掩膜之方法係使 用例如於半導體層14,上將光致抗蝕劑積層，並進行曝光及 顯影等衆所周知之圖案化方法。 其次，如圖8C所示，於圖案化有掩膜91之半導體層 上積層第二電極層15·。其後’如圖8D所示，除去掩膜 91，將第二電極層15'進行圖案化。 其次，如圖8E所示，將因除去掩膜91而露出之半導體層 ，之-部份除去，形成除去部。其後，如圖8f所示，於 除去部之一部份處，以接觸於第一電極層13及半導體層 152978.doc 201140086 14 ;且不接觸於第二電極層^，的方式，設置導電層92。 藉由《亥方法，將基板!】，與第二電極層Η，電性連接，製作 微型電池10a。作為導電層92 y 电禮之材科’可使用例如焊錫。 圖9係顯示具備如此之微都雪分丨〜★ |歧命 傲！電/也10a之太陽電池10'之概略平 面圖。 如圖10所示，使用如上所述獲得之太陽電池10，，使用 遮光板93，對微型電池1〇a局部照射光，局部測定微型電 池l〇a之光電轉換效率。圖1〇係用於說明對微型電池照射 光之先前方法之概略剖面圖。在圖1〇中，符號33〇係表示 電流電壓測；til等之探針，在形成於微型電池心内之第 二電極層15·接觸有導電層92。如此，使用測定電流電壓特 性之裝置，局部地測定微型電池之光電轉換效率。 但，在上述之先前方法中，圖8所示之半導體層14，之一 部份之除去作業係藉由手工作業使用針而進行。該作業係 需要熟練度之作業，故存在無法容易地進行除去作業之問 題點。再者，太陽電池一般為大型，為在平行於基板之方 向之靠近太陽電池之中央部之區域，測定光電轉換效率， 例如如圖11所示，必須將太陽電池10，分割成複數個小型電 池後測定光電轉換效率。因此，有測定光電轉換效率之步 驟繁雜之問題點。圖11係顯示太陽電池1〇，被分割成複數個 小型電池之例之概略圖。再者，如圖U所示，為對微型電 池10a局部照射光’有必須使用如遮光板93般限定光照射 之區域之構件’且測定光電轉換效率之步驟繁雜之問題 點。如此’測定太陽電池之光電轉換效率之步驟有繁雜， 152978.doc 201140086 通用性低，且自動化亦困難之問題。 【發明内容】 本發明係鑑於上述情況而完成者，其目的在於提供_種 能夠在薄膜太陽電池之期望之區域中，簡便且高精度地局 部評價光電轉換效率之評價方法及評價裝置。 β為解決上述之_，本發明m之太陽電池之評 價方法為：準備至少依序積層有第一電極層及半導體層之 基板；以包圍評價光電轉換效率之料之評價區域的方式 除去上述半導體層，藉此形成第—槽；於形成有上述第— 槽之上述半導體層上積層第二電極層，藉此將上述第二電 極層埋藏於上述第一槽中；在利用平行於上述基板之方向 之上述第一槽包圍之内側區域中，藉由除去上述半導體層 及上述第二電極層而形成第二槽’使上述評價區域與周邊 區域電性絕緣；對包含與上述周邊區域電性絕緣之上述評 價區域之區域照射光m包含上述評價區域之區域照 射有光時之上述評價區域之電流電壓特性。 、 本發明之第1態樣之太陽電池之評價方法，以上述基板 及上述第_電極層具有光透射性為佳；藉由對與形成有上 述第f極層t面相反之上述基板之面照射，形成上 述第一槽及上述第二槽。 為解決上述之問題，本發明之第2態樣之太陽電池之評 價方法為：準備至少依序積層有第一電極層及半導體層之 基板；於上述半導體層上形成第二電極層；以沿著評價光 電轉換效率之特定之評價區域的方式，於上述第二電極層 152978.doc 201140086 形成第-除去部；於上述第一除去部中沿著上述第一除 去部而除去上述半導體層及上述第—電極層之—部份，藉 此形成第一除去部；以不接觸於上述第二電極層， 上述評價區域的方式，形成埋藏上述第二除去部之;電 層；使上料龍域與周邊區域電性絕緣；僅對與上述周 邊區域電性絕緣之上述評價區域照射光；在於上述評價區 域照射有光時，將探針接觸配置於上述評價區域及上述導 電層，從而測定上述評價區域之電流電壓特性。 為解決上述之問題，本發明之第3態樣之太陽電池之評 價裝置包含：第-積層裝置，其係於基板上依序積層第一 電極層及半導體層；第—除去裝置，其係以包_定之評 價區域的方式除去上述半導體層，藉此形成第一槽；第二 積層裝置’其係於形成有上述第一槽之上述半導體層上積 層第二電極層’藉此將上述第二電極層埋藏於上述第一 槽；第二除去裝置，其係在利用平行於上述基板之方向之 上述第h所包圍之内側區域中，藉由除去上述半導體層 及上述第二電極層而形成第二槽’且使上述評價區域與周 邊區域電性絕緣；光照射部，其係對包含與上述周邊區域 電性絕緣之上述評價區域的區域照射光；及測定部，其係 測定於包含上述評價區域 < 區域照射有光時之上述評價區 域的電流電壓特性。 在本發明之第3態樣之太陽電池之評價裝置中，上述第 一除去裝置及上述第二除去裝置宜具備雷射光源；上述光 照射部具備光源；上述測定部具備檢測電流或電塵之探 152978.doc 201140086 針；上述雷射光源、上述光源、及上述探針 上係在太陽電池之上方獨立移動。 以 本發明之第4態樣之太陽電池之評價裝置包人 置，其係於基板上依序積層第一電極層 積層裝 #久牛導體層；第二 電極形成部，其係於上述半導體層上 〜取弟一電極層；第 -除去裝置’其係以沿著特定之評價區域的方式，於上述 第二電極層形成第-除去部；第二除去裝置，其係在上^ 第一除去部中，藉由沿著上述第一除去部而除去上述半導 體層及上述第一電極層之一部份，而形成第二除去部；導 電層形成部，其係以不接觸於上述第二電極層且沿著上述 評價區域的方式，形成埋藏上述第二除去部之導電層·絕 緣部，其使上述評價區域與周邊區域電性絕緣；光照射 部，其係僅對與上述周邊區域電性絕緣之上述評價區域照 射光，及測定部，其係於上述評價區域照射有光時，將探 針接觸配置於上述評價區域及上述導電層，測定上述評價 區域之電流電壓特性。 根據本發明’能夠在薄膜太陽電池之期望之區域中，簡 便且尚精度地評價局部之光電轉換效率。 【實施方式】 以下’玆基於圖式，說明本發明太陽電池之評價方法及 6平價裝置之實施形態。 本發明之技術範圍並不限定於以下所述之實施形態，可 在不脫離本發明之宗旨之範圍内施加各種變更。 又’在以下之說明所使用之各圖式中，為使各構件為可 152978.doc -10- 201140086 辨識之大小，而適宜變更了各構件之縮尺。 <太陽電池之評價方法之第1實施形態> 圖1A係顯示適用本發明第1實施形態之評價方法之太陽 電池的概略剖面圖。圖1B係顯示以圖1A之符號A表示之部 份之放大剖面圖。 太陽電池10具備於基板η之第丨面丨1 a上至少依序積層有 第一電極層13(下部電極）、半導體層14、及第二電極層 15(上部電極）之光電轉換體12。 基板11係以例如玻璃或透明樹脂等太陽光之透射性優 良’且具有耐久性之絕緣材料形成。使太陽光入射至如此 之基板11之第2面lib’藉此可使太陽電池1〇發電。 第一電極層13係以透明之導電材料，例如tc〇、ITO等 之光透射性金屬氧化物形成。又，第二電極層15係以Ag、 Cu等導電性金屬膜形成。 例如’在太陽電池10為薄膜矽太陽電池之情形下，如圖 1B所示’半導體層14具有於p型矽膜17與n型矽膜18之間包 夾有i型矽膜16之pin接合構造。且，若對該半導體層14入 射太陽光，則會產生電子與電洞，且電子與電洞會根據p 型矽膜17與η型矽膜18之電位差而活躍地移動，使其連續 重複’會於第一電極層13與第二電極層15之間產生電位差 (光電轉換）。另’作為矽膜之材料，係採用非晶質型、納 米晶型等任意之材料。 光電轉換體12通常係利用劃線分割成例如外形為條帶狀 之多數之區劃元件（省略圖示）。該區劃元件係被相互電性 152978.doc 201140086 區劃，且在相互鄰接之區劃元件之間，例如電性串聯連 接。藉此’光電轉換體12具有將多數之區劃元件全部電性 串聯連接之構造’從而可導出高電位差之電流。劃線係藉 由例如於基板11之第1面1 i a均一地形成光電轉換體丨2後， 利用雷射等於光電轉換體12以特定之間隔形成槽而形成。 在第1實施形態中，係在未形成有劃線之區域内進行以下 說明之操作。 如下所述，於形成有第丨實施形態之太陽電池1〇之光電 轉換體12之面，設定有評價光電轉換效率之特定區域、及 成為位於特定區域之周邊之周邊區域之區域。 在第1實施形態中，宜於構成光電轉換體12之第二電極 層1 5上，進一步形成有包含絕緣性樹脂等之保護層（省略 圖示）。 又，如圖1B所示，在第i實施形態中，例示有由H@pin 接：構造構成之單一型半導體層，但本發明並不限定於該 構^ ’例 亦可採用積層有2個4 3個等複數個pin接合 構造之串疊型半導體層。 、在如此之串疊型半導體層之情形，可根據照射至太陽電 :之光之波長帶域’調節進行光電轉換之層(膜厚 料之種類等）。 2本發明第1實施形態之評價方法中，在太陽電池之製 驟中同時製作具有與先前不同之形態之複數個微型電 ,，並局部評價該微型電池之光電轉換效率。 以下，-面引用圖2A〜圖3D’ 一面依序說明評價方法之 152978.doc 201140086 各步驟中圖1A及圖1B所例示之太陽電池之情形。 圖2A〜圖3D係說明本發明之第1實施形蜞 〈评價方法之 圖’且圖2A〜圖2D係說明製作微型電池之 圖’圖3A〜圖3D係概略平面圖。 (第一槽之形成步驟） 步驟之概略剖面 在本發明第1實施形態之評價方法中，首先如圖2A及圖 3A所示，於基板11之第丨面丨^上依序積層第一電極層。及 半導體層14。其後，以包圍特定之評價區域的方式除去半 導體層14’實施形成第一槽i4〇a之步驟（第一槽之形成步 驟）。此處’特定之評價區域係圖2A之位於第一槽14〇&之 間之區域，係圖3A之以第一槽140a包圍之區域。 作為形成第一電極層13及半導體層14之方法，係使用衆 所周知之方法。又，第一電極層13及半導體層14之厚度可 與先前之太陽電池之層構造之厚度相同。 第一槽140a可藉由例如照射雷射而形成。 作為雷射之波長’以波長在500〜560 nm左右之範圍内為 佳，通常宜使用532 nm之綠色雷射。 作為雷射之照射方法，宜朝基板11之第2面1 lb(與形成 第一電極層13之面相反之面）照射雷射。 第一槽140a之寬度（圖3A之平面圖之寬度）Wa只要係將以 第一槽140a包圍之區域Ra與周邊區域電性絕緣，則不限定 於特定之寬度。寬度Wa宜為1〇〜200 μιη左右，較佳為 80~120 μιη左右。 在本發明第1實施形態中，例示有令第一槽140a之寬度 152978.doc -13· 201140086Ag film is specially composed. In the non-crystalline solar cell including the photoelectric conversion body including the upper and lower electrodes and the semiconductor film, if the layers are formed uniformly over a wide area on the substrate, the potential difference is reduced and the resistance value is increased. Therefore, for example, an amorphous stone solar cell is constructed by forming a zoning element electrically dividing the photoelectric conversion body by a specific size and electrically connecting the zoning elements adjacent to each other. Specifically, a groove called a scribe line is formed on a photoelectric conversion body which is uniformly formed on a substrate over a wide area by using laser light or the like, and a plurality of strip-shaped zoning elements are obtained. And electrically connected in series to the composition of the zoning component. However, it is known that in the thus constructed thin film solar cell, several structural defects are produced at the manufacturing stage & For example, when a film is formed, fine particles are mixed into a ruthenium solar cell, or small holes are formed. Therefore, there are cases where the upper electrode and the lower electrode are partially/circulated. Further, when a photoelectric conversion body is formed on a substrate, when a plurality of division elements are separated by a scribe line, the metal film constituting the upper electrode is melted along the scribe line to reach the lower portion. The electrode 'causes a situation in which the upper electrode and the lower electrode are partially short-circuited by molten metal. If so short-circuited, the photoelectric conversion efficiency locally changes in the direction parallel to the film surface, and unevenness--the distribution (offset) of the photoelectric conversion efficiency is generated. Furthermore, with the enlargement of the thin film solar cell, the distribution of the photoelectric conversion efficiency is likely to occur in the direction parallel to the film surface due to the film formation conditions or the state of the device, and the quality of the solar cell is likely to occur. 152978.doc 201140086 Both. Therefore, it has been desired to develop a technique capable of accurately measuring the photoelectric conversion efficiency and determining a portion where a non-uniform distribution occurs when a distribution of uneven photoelectric conversion efficiency occurs. In contrast, for example, a method of measuring a photoelectric conversion efficiency by using a plurality of small-sized thin film solar cells (micro batteries) has been used. Such a method is disclosed in, for example, Japanese Laid-Open Patent Publication No. 2009-1 1 1215 or Japanese Patent Laid-Open No. 2004-241449. Hereinafter, specific description will be made with reference to FIGS. 8A to 8F. Fig. 8A is a schematic cross-sectional view showing the previous measurement method for partially measuring the photoelectric conversion efficiency of a portion of a solar cell. First, as shown in Fig. 8A, a first electrode layer 13 (lower electrode) and a semiconductor layer 14 are sequentially laminated on a substrate u having light transparency. Next, as shown in FIG. 8B, a mask 91 for forming a second electrode layer 15 having a desired pattern on the semiconductor layer 14, (upper electrode), is formed on the semiconductor layer 14 by patterning. . As a method of forming a mask, for example, a well-known patterning method in which a photoresist is laminated on a semiconductor layer 14 and exposed and developed is used. Next, as shown in Fig. 8C, a second electrode layer 15· is laminated on the semiconductor layer patterned with the mask 91. Thereafter, as shown in Fig. 8D, the mask 91 is removed, and the second electrode layer 15' is patterned. Next, as shown in Fig. 8E, the semiconductor layer exposed by removing the mask 91 is partially removed to form a removed portion. Thereafter, as shown in FIG. 8f, a portion of the removed portion is provided in contact with the first electrode layer 13 and the semiconductor layer 152978.doc 201140086 14 ; and is not in contact with the second electrode layer ^ Layer 92. The microbattery 10a is fabricated by electrically connecting the substrate to the second electrode layer by the "Hai method." As the conductive layer 92 y, it is possible to use, for example, solder. Figure 9 shows that there is such a slight snow splitting ~ ★ | A schematic plan view of the solar cell 10' of the electric/also 10a. As shown in Fig. 10, using the solar cell 10 obtained as described above, the light-shielding plate 93 was used to locally irradiate the micro-battery 1A, and the photoelectric conversion efficiency of the micro-battery 10a was partially measured. Fig. 1 is a schematic cross-sectional view showing a prior art method of irradiating light to a micro battery. In Fig. 1A, reference numeral 33 denotes a current-voltage measurement; a probe of til or the like is in contact with a conductive layer 92 in a second electrode layer 15· formed in the core of the microbattery. Thus, the photoelectric conversion efficiency of the microbattery was locally measured using a device for measuring current and voltage characteristics. However, in the above prior method, the removal of one portion of the semiconductor layer 14 shown in Fig. 8 was carried out by using a needle by hand. This operation requires skillful work, so there is a problem that the removal operation cannot be easily performed. Further, the solar cell is generally large, and the photoelectric conversion efficiency is measured in a region close to the central portion of the solar cell in a direction parallel to the substrate. For example, as shown in Fig. 11, the solar cell 10 must be divided into a plurality of small batteries. The photoelectric conversion efficiency was measured afterwards. Therefore, there are problems in the steps of measuring the photoelectric conversion efficiency. Fig. 11 is a schematic view showing an example in which a solar cell is divided into a plurality of small batteries. Further, as shown in Fig. U, in order to partially irradiate the micro-battery 10a with light, there is a problem that the step of measuring the photoelectric conversion efficiency is complicated by the use of the member of the region where the light irradiation is limited as in the light-shielding plate 93. Thus, the steps of measuring the photoelectric conversion efficiency of a solar cell are complicated, and the 152978.doc 201140086 has low versatility and is also difficult to automate. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the invention is to provide a method and an evaluation apparatus for evaluating the photoelectric conversion efficiency in a simple and highly accurate manner in a desired region of a thin film solar cell. In order to solve the above problem, the solar cell of the present invention is evaluated by preparing a substrate in which at least a first electrode layer and a semiconductor layer are sequentially laminated; and removing the semiconductor in such a manner as to surround an evaluation region of the material for evaluating photoelectric conversion efficiency. Forming a first groove; forming a second electrode layer on the semiconductor layer on which the first groove is formed, thereby burying the second electrode layer in the first groove; and using parallel to the substrate In the inner region surrounded by the first groove in the direction, the second groove is formed by removing the semiconductor layer and the second electrode layer to electrically insulate the evaluation region from the peripheral region; and electrically insulating the peripheral region from the periphery The area irradiation light m of the evaluation region includes a current-voltage characteristic of the evaluation region when the region of the evaluation region is irradiated with light. In the method for evaluating a solar cell according to the first aspect of the present invention, it is preferable that the substrate and the first electrode layer have light transmittance; and the surface of the substrate opposite to the surface t of the f-th layer is formed. Irradiation forms the first groove and the second groove. In order to solve the above problems, the solar cell of the second aspect of the present invention is characterized in that: a substrate in which at least a first electrode layer and a semiconductor layer are sequentially laminated; a second electrode layer is formed on the semiconductor layer; In the method of evaluating the specific evaluation region of the photoelectric conversion efficiency, the second electrode layer 152978.doc 201140086 forms a first removal portion, and the first removal portion removes the semiconductor layer along the first removal portion and a portion of the first electrode layer, thereby forming a first removing portion; forming a buried portion of the second removing portion so as not to contact the second electrode layer and the evaluation region; and forming an electric layer; Electrically insulated from the peripheral region; only the above-mentioned evaluation region electrically insulated from the peripheral region is irradiated with light; and when the evaluation region is irradiated with light, the probe is placed in contact with the evaluation region and the conductive layer to measure the evaluation. Current and voltage characteristics of the area. In order to solve the above problems, the apparatus for evaluating a solar cell according to a third aspect of the present invention includes: a first layering device for sequentially laminating a first electrode layer and a semiconductor layer on a substrate; and a first removing device The first semiconductor layer is formed by removing the semiconductor layer from the evaluation region, and the second layering device is formed by laminating a second electrode layer on the semiconductor layer on which the first trench is formed. The electrode layer is buried in the first groove; and the second removing device is formed by removing the semiconductor layer and the second electrode layer in an inner region surrounded by the hth in a direction parallel to the substrate The two grooves are electrically insulated from the peripheral region; the light-irradiating portion irradiates light to a region including the evaluation region electrically insulated from the peripheral region; and the measuring portion is included in the evaluation Area < The current-voltage characteristic of the above-mentioned evaluation area when the area is irradiated with light. In the apparatus for evaluating a solar cell according to a third aspect of the present invention, the first removing device and the second removing device preferably include a laser light source; the light irradiating portion includes a light source; and the measuring portion includes a detecting current or electric dust. Detecting 152978.doc 201140086 needle; the above laser light source, the light source, and the probe are independently moved above the solar cell. An evaluation device for a solar cell according to a fourth aspect of the present invention is characterized in that a first electrode layered layer is mounted on a substrate, and a second electrode forming portion is attached to the semiconductor layer. a first-to-be-electrode layer; a first-removal device that forms a first-removal portion on the second electrode layer along a specific evaluation region; and a second removal device that is first removed a second removal portion is formed by removing a portion of the semiconductor layer and the first electrode layer along the first removal portion, and a conductive layer forming portion that is not in contact with the second electrode a conductive layer and an insulating portion in which the second removed portion is buried, and electrically insulating the evaluation region from the peripheral region, and the light-irradiating portion is electrically connected only to the peripheral region. The evaluation region of the insulation is irradiated with light, and the measurement unit is configured to measure the current and voltage of the evaluation region by placing the probe in contact with the evaluation region and the conductive layer when the evaluation region is irradiated with light. Sex. According to the present invention, it is possible to easily and accurately evaluate the local photoelectric conversion efficiency in a desired region of the thin film solar cell. [Embodiment] Hereinafter, embodiments of the solar cell evaluation method and the 6-price apparatus of the present invention will be described based on the drawings. The technical scope of the present invention is not limited to the embodiments described below, and various modifications can be made without departing from the spirit and scope of the invention. Further, in each of the drawings used in the following description, the scale of each member is appropriately changed in order to make each member a size that can be recognized by 152978.doc -10- 201140086. <First Embodiment of Solar Cell Evaluation Method> FIG. 1A is a schematic cross-sectional view showing a solar battery to which the evaluation method according to the first embodiment of the present invention is applied. Fig. 1B is an enlarged cross-sectional view showing a portion indicated by a symbol A of Fig. 1A. The solar cell 10 includes a photoelectric conversion body 12 in which at least a first electrode layer 13 (lower electrode), a semiconductor layer 14, and a second electrode layer 15 (upper electrode) are laminated on the second surface 丨 1 a of the substrate η. The substrate 11 is formed of an insulating material having excellent transparency such as glass or a transparent resin and having durability. The sunlight is incident on the second surface lib' of the substrate 11 so that the solar cell can generate electricity. The first electrode layer 13 is formed of a transparent conductive material such as a light-transmitting metal oxide such as tc, ITO or the like. Further, the second electrode layer 15 is formed of a conductive metal film such as Ag or Cu. For example, in the case where the solar cell 10 is a thin film 矽 solar cell, as shown in FIG. 1B, the 'semiconductor layer 14 has a pin bond between the p-type ruthenium film 17 and the n-type ruthenium film 18 with the i-type ruthenium film 16 interposed therebetween. structure. When sunlight is incident on the semiconductor layer 14, electrons and holes are generated, and electrons and holes are actively moved according to the potential difference between the p-type germanium film 17 and the n-type germanium film 18, so that they are continuously repeated. A potential difference (photoelectric conversion) is generated between the first electrode layer 13 and the second electrode layer 15. Further, as the material of the ruthenium film, any material such as an amorphous type or a nanocrystalline type is used. The photoelectric conversion body 12 is usually divided into a plurality of zoning elements (not shown) having a strip shape in a straight line by a scribe line. The zoning elements are zoned electrically 152978.doc 201140086 and are connected between mutually adjacent zone elements, such as electrical series. Thereby, the photoelectric conversion body 12 has a structure in which a plurality of zonal elements are electrically connected in series, so that a current having a high potential difference can be derived. For example, the scribe line is formed by uniformly forming the photoelectric conversion body 丨2 on the first surface 1 i a of the substrate 11, and forming a groove at a specific interval by using the laser equal to the photoelectric conversion body 12. In the first embodiment, the operation described below is performed in a region where no scribe line is formed. As described below, in the surface of the photoelectric conversion body 12 on which the solar cell 1 of the solar cell of the second embodiment is formed, a specific region for evaluating the photoelectric conversion efficiency and a region for the peripheral region around the specific region are set. In the first embodiment, it is preferable to form a protective layer (not shown) including an insulating resin or the like on the second electrode layer 15 constituting the photoelectric conversion body 12. Further, as shown in FIG. 1B, in the i-th embodiment, a single-type semiconductor layer having a structure of H@pin is described as an example. However, the present invention is not limited to the configuration, and two layers may be used in the laminate. Three parallel semiconductor layers of a plurality of pin bonded structures. In the case of such a tandem semiconductor layer, the layer for photoelectric conversion (the type of the film material, etc.) can be adjusted in accordance with the wavelength band of the light irradiated to the solar energy. In the evaluation method according to the first embodiment of the present invention, a plurality of micro-electrics having a different form from the prior art are simultaneously produced in the process of the solar cell, and the photoelectric conversion efficiency of the micro-battery is locally evaluated. Hereinafter, the case of the solar cell exemplified in Figs. 1A and 1B in each step of the evaluation method will be described in order from the side of Fig. 2A to Fig. 3D'. 2A to 3D are views showing a first embodiment of the present invention, a diagram of an evaluation method, and Figs. 2A to 2D are views showing a process of fabricating a microbattery. Figs. 3A to 3D are schematic plan views. (Step of forming the first groove) In the evaluation method of the first embodiment of the present invention, first, as shown in FIG. 2A and FIG. 3A, the first electrode is sequentially laminated on the second surface of the substrate 11. Floor. And a semiconductor layer 14. Thereafter, the step of forming the first groove i4a (the first groove forming step) is performed by removing the semiconductor layer 14' so as to surround the specific evaluation region. Here, the specific evaluation area is the area between the first grooves 14A & Fig. 2A, which is the area surrounded by the first groove 140a of Fig. 3A. As a method of forming the first electrode layer 13 and the semiconductor layer 14, a well-known method is used. Further, the thickness of the first electrode layer 13 and the semiconductor layer 14 may be the same as the thickness of the layer structure of the prior solar cell. The first groove 140a can be formed by, for example, irradiating a laser. As the wavelength of the laser, the wavelength is preferably in the range of about 500 to 560 nm, and a green laser of 532 nm is usually used. As a method of irradiating the laser, it is preferable to irradiate the laser toward the second surface 11b of the substrate 11 (the surface opposite to the surface on which the first electrode layer 13 is formed). The width of the first groove 140a (the width of the plan view of Fig. 3A) Wa is not limited to a specific width as long as the region Ra surrounded by the first groove 140a is electrically insulated from the peripheral region. The width Wa is preferably about 1 to 200 μm, preferably about 80 to 120 μm. In the first embodiment of the present invention, the width of the first groove 140a is exemplified. 152978.doc -13· 201140086
Wa整體均相同之構造，但本發明並不限定於該構造，可 令第一槽140a之一部份之寬度與其他部份之寬度不同，亦 可令第一槽140a之寬度整體上不同（亦可令第一槽14(^之 寬度整體性變化）。 但’以能夠容易地形成槽之點來看，最佳的是令第一槽 140a之寬度Wa整體上相同之構造。 在本發明之第1實施形態中，例示有未除去第一電極層 13之構造’但亦可在不干擾本發明之效果之範圍内，除去 靠近半導體層14之第一電極層13之一部份。 區域Ra之平行於基板丨丨之方向之表面積（圖3A之平面圖 之表面積）可根據目的（需要）而任意地設定，例如，可考慮 後述之評價區域Rb之表面積等進行設定。 通常’區域Ra之表面積宜為36〜225 mm2左右，更佳為 64~144 mm2左右。 如圖3A所示，區域以之表面形狀例如為大致四方形 時，其一邊之長度宜為6〜15 mm左右，更佳為8〜12爪爪左 右。 在本發明之第1實施形態中，例示有在平面圖中區域Ra 之形狀為大致四方形狀之構造。換而言之，例示有區域Ra 之立體形狀（整體之形狀）為大致四棱柱狀之構造。但本發 明並不限定於該構造，區域Ra之形狀可為例如大致三角形 狀、大致五邊形狀等其他多邊形狀，亦可為大致圓形狀、 大致橢圓形狀等其他形狀。 又，區域Ra可以組合如此之複數個形狀中二種以上之形 152978.doc 201140086 狀之複合形狀形成’亦可以進而以不屬於如此之複數個形 狀中任意一者之不定形狀形成。 但’以能夠容易地形成區域Ra之點來看，最佳的是區域 Ra以多邊形狀，尤其是大致四方形狀形成。 (第二電極層之形成步驟） 在本發明第1實施形態之評價方法中，如圖2B及圖把所 示，在第一槽之形成步驟後，於形成有第一槽14〇a之基板 11上之面積層第二電極層15，使第二電極層15埋藏於第一 槽140a(第二電極層之形成步驟）。作為形成第二電極層15 之方法，係使用衆所周知之方法。 又，第二電極層15之厚度除了埋藏於第一槽140a之第二 電極層15之厚度，其他可與先前之太陽電池之層構造之厚 度相同。 第一槽140a中，在第—槽14〇&之深度方向（半導體層μ 之厚度方向）之整體中，可形成埋藏有第二電極層15之部 位。第一槽““雖可於第二電極層15之一部份存在空隙 部，但空隙部之體積越小越好，尤佳的是第一槽14如全部 以第二電極層15埋藏。 藉由實施第二電極層之形成步驟’可經由埋藏於第一槽 14 0 a之第—電極層1 5之 之0卜位，使第二電極層15與第一電極 層13電性接觸。 (第二槽之形成步驟） 在本發明第1實施形能 一 〜、之5子k方法中，如圖2C及圖3C所 示，在第二電極層之形忐牛咖μ 小成步驟後，於平行於基板11之方向 I52978.doc • 15 - 201140086 之由第一槽140a所包圍之内側區域中，除去半導體層丨斗及 第二電極層15’藉此形成第二槽M〇b(第二槽之形成步 驟）。藉由該步驟，形成與周邊區域電性絕緣之評價區 域。 藉由形成第二槽140b,可獲得形成有包含由第二槽14〇b 包圍’與區域Ra絕緣之評價區域奶之微型電池1〇a之太陽 電池1 0 » 作為形成第二槽140b之方法，可使用與形成第一槽14〇& 之方法相同之方法。作為除去半導體層14及第二電極層15 之方法，可令除去半導體層14之方法與除去第二電極層15 之方法相同，亦可不同。又，可同時除去半導體層14及第 二電極層15，亦可依序分別除去。 第二槽140b之寬度（圖3A之平面圖之寬度）Wb，只要使 評價區域Rb與周邊區域電性絕緣，則並不限定於特定之寬 度。寬度Wb可與第一槽140a之寬度Wa相同。 在本發明第1實施形態中，作為第二槽140b，雖例示有 寬度Wb整體上相同之構造，但本發明並不限定於該構 造’可令第二槽140b之一部份之寬度與其他部份之寬度不 同’亦可令第二槽140b之寬度整體上不同（亦可令第二槽 140b之寬度整體性變化）。 但’以能夠容易地形成槽之點來看，最佳的是第二槽 140b之寬度Wb整體上相同之構造。 在本發明第1實施形態中，例示有未除去第一電極層j 3 之構造，但亦可在不干擾本發明之效果之範圍内，除去靠 152978.doc -16- 201140086 近半導體層14之第一電極層13之一部份。 坪價區域Rb之平行於基板丨丨之方向之表面積（圖3C之平 面圖之評價區域Rb之表面積）可以小於區域Ra之平行於基 板Π之方向之表面積的方式任意地設定。例如，宜考慮評 價光電轉換效率時使用之電流電壓測定器等之探針間之距 離等，設定評價區域Rb之表面積。 通常，評價區域Rb之表面積宜為！〜！〇〇 mm2左右，更佳 為9〜49 mm2左右。 評價區域Rb之表面形狀，例如如圖3A所示，在為大致 四方形時，其一邊之長度宜為卜⑺mm左右更佳為3〜7 mm左右。 在本發明第1實施形態中，例示有評價區域Rbi形狀在 平面圖中為大致四方形狀之構造。換而言之，例示有評價 區域Rb之立體形狀（整體之形狀）為大致四棱柱狀之構造。 但本發明並不限定於該構造，評價區域奶之形狀可為例如 大致三角形狀、大致五邊形狀等其他多邊形狀亦可為大 致圓形狀、大致橢圓形狀等其他形狀。 又，砰價區域Rb可以組合如此之複數個形狀中二種以上 之形狀之複合形狀形成，進而亦可以不屬於如此之複數個 形狀中任意一者之不定形狀形成。 但，以能夠容易地形成評價區域奶之點來看，最佳的 是’將評價區域Rb以多邊形狀 成。 尤其是大致四方形狀形 (第三槽之形成步驟） 152978.doc 17 201140086 在本發明第1實施形態之評價方法中，宜如圖2D及圖3D 所示’在第二槽之形成步驟後，實施除去半導體層14及第 二電極層15而形成第三槽140c之步驟（第三槽之形成步 驟）。在該步驟中，在平行於基板11之方向，於埋藏有第 二電極層15之第一槽140a之外側區域（位於由第_槽14〇a 包圍之内側區域之外的區域）形成第三槽14〇c。利用該步 驟，使包含第一槽140a整體之區域與周邊區域電性絕緣。 換而言之，藉由實施第三槽之形成步驟，可使由第三槽 140c包圍之區域Rc與周邊區域電性絕緣，且進一步高精度 地評價評價區域Rb2光電轉換效率。此處，區域Rc包含有 含評價區域Rb之區域Ra。 作為形成第三槽140c之方法，亦可使用與形成第二槽 140b之方法相同之方法。 第一扎140c之寬度Wc ’只要是使區域Rc與周邊區域電 性絕緣’則並不限定於特定之寬度。寬度We可與第二槽 140b之寬度Wb相同。 在假設不存在第二槽顯之情形下，可將請之平面圖 之區域Rc之表面積以大於单而国▲ 儐大於十面圖之區域Ra之表面積的方式 任意設定。例如，宜者唐禅彳香止而 号慮。平價先電轉換效率時使用之電流 電壓測定器等之探針間之距離望 』此離專，而設定區域Rc之表面 積。 在假設不存在第二槽14Gb之情形下平面圖之區域^之 形狀可與區域Ra或評價區域Rb之形狀相同。 第三槽⑽之形態(構造)可與第二槽爆相同。 152978.doc 201140086 在本發明第1實施形態之評價方法中，雖例示有未除去 第一電極層13之狀態，但亦可在不干擾本發明之效果之範 圍内，除去靠近半導體層14之第一電極層13之一部份。 (照射步驟） 在本發明第1實施形態之評價方法中，在第三槽之形成 步驟後，或在不實施第三槽之形成步驟時之第二槽之形成 步驟後，對包含與周邊區域絕緣之評價區域之區域照射光 (照射步驟）。 例如，在對开》成有圖2 A〜圖3D所示之微型電池i〇a後之 太陽電池10照射光之情形下，有光照射之區域只要包含評 價區域Rb即可，亦可對位於評價區域尺^^之外側之區域照 射光。如圖4A所示，光係照射至太陽電池10之基板11，且 穿過基板11入射至半導體層14。 在微型電池l〇a中，由於評價區域Rb與周邊區域電性絕 緣故在貫施照射步驟之際，可不實施以遮光板等限定光 照射之區域之步驟，而簡便地實施照射步驟。 (測定步驟） 在本發明第1實施形態之評價方法中，其次，測定於包 含*平彳貝區域之區域照射有光時之評價區域之電流電壓特性 (測定步驟）。 例如’在測定圖2A〜圖3D所示之太陽電池1〇之電流電壓 特性之情形，測定步驟係如圖4A及圖4B所例示般進行。 圖4A及圖4B係說明第1實施形態之測定步驟之電流電壓 特丨生之測疋方法的圖’圖4a係概略剖面圖，圖4B係概略 152978.doc 19 201140086 平面圖。 又，圖4Α及圖4Β所示之箭頭係表示測定時之電流。 在圖4Α及圖4Β所示之微型電池1〇a中，將第1探針 330A(電流電壓特性測定部、測定部）接觸配置於形成於評 價區域Rb之第二電極層15上。將第2探針33〇B(電流電壓特 性測定部、測定部）接觸配置於位於平行於基板丨丨之方向 之第二槽140b之外側（由第二槽14〇b包圍之區域之外側）， 且形成於罪近第一槽140a之位置之第二電極層15上。藉由 使電流從第1探針330A向第2探針330B流動，測定微型電 池10a之電流電壓特性。此處，第二電極層15係形成在位 於和光照射之太陽電池1 〇之面相反之面的位置。 藉由如此測定電流電壓特性，可包圍與周邊區域絕緣之 評價區域Rb，且經由埋藏於第一槽14〇a之第二電極層15， 測定電流電壓特性。 此時，由於評價區域尺13確實與其他之區域（周邊區域）絕 緣’故不會受到其他之區域之影響。 在配置探針330A、330B中配置於評價區域Rbi外之探 針之情形，即，配置第2探針330B之位置係靠近埋藏有第 二電極層15之第一槽140a。 例如如圖4A所示，於如此之第一槽14(^之正上方形成有 第二電極層15之凹狀部l5〇a之情形下，可跨凹狀部15〇&而 配置2個第2探針330B。又，可將2個第2探針33〇b兩者配 置在平行於基板之方向之凹狀部l50a與第二槽14扑之間的 位置（内側位置）。又，亦可將2個第2探針330B兩者配置在 152978.doc • 20· 201140086 平行於基板之方向之凹狀部15Ga與第三⑴他之間的位置 (外側位置）。又，亦可將2個第2探針33〇B中任意一者或兩 者配置於凹狀部15〇a上。 再者，在本發明第丨實施形態之評價方法中，亦可藉由 使用探針33OA、330B，對微型電池1〇a施加電壓，而測定 在微型電池l〇a流動之電流（或電阻）。例如，在未對微型電 池l〇a照射光的狀態下，於第一電極層13與第二電極層υ 之間施加電壓而測定微型電池1〇a之電極間之電阻時1可 在測定電流電壓特性之前’檢測微型電池1〇a是否有缺 陷。 ' 又，亦可測定微型電池l〇a之電極間之電阻與電流電壓 特性之關係。 在本發明第1實施形態之評價方法之上述全部步驟中， 不需要利用手工作業之熟練作業，亦可實現自動化。 又，評價大型太陽電池之光電轉換效率之情形，亦不需 要為測定平行於基板之方向的靠近中央部之附近區域之光 電轉換效率所要求的將太陽電池分割成複數個之步驟。再 者，亦不需要以遮光板等限定光照射之區域之步驟。 如此，以能夠簡便且高精度地評價太陽電池之特定區域 之光電轉換效率之點來看，本發明第i實施形態之評價方 法顯著比先前之評價方法優異。 <太陽電池之評價裝置之第1實施形態> 本發明第1實施形態之太陽電池之評價裝置係用於上述 之評價方法。該評價裝置包含：第一積層裝置，其係於基 152978.doc -21- 201140086 板上依序積層第一電極層及半導體層’第一除去裝置，其 係藉由以包圍特定之評價區域的方式除去上述半導體層， 而形成第—槽；第二積層裝置’其係於形成有上述第一槽 之上料導體層上積層第二電極層，藉此將上述第二電極 層埋臧於上述第一槽；第二除去裝置，其係在平行於上述 基板之方向之由上述第一槽包圍之内側區域中，除去上述 ”體層及上述第二電極層，藉此形成第二槽，並使上述 評價區域與周邊區域電性絕緣；光照射部，其係對包含與 上制邊區域電性絕緣之上述評價區域之區域照射光，·及 測疋部’其係測定於包含上述評價區域之區域照射有光時 之上述評價區域之電流電壓特性。 此處’評價區域是指藉由例如對形成有圖2a〜圖3D所示 之微型電池10a後之太陽電池1〇照射光’而進行評價之評 價區域Rb。 第積層裝置及第二積層裝置係與設置於先前之太陽電 池之製造裝置中’且形成電極層或半導體層等之際所使用 之裝置相同的裝置。 作為第-除去農置及第二除去裝置’可例示具備雷射光 源之雷射照射裝置。雷射照射裝置以波長為500〜56〇⑽左 右之雷射為佳’通常可照射532 nm之綠色雷射。 作為光照射部，可例示具備光源之光照射裝置。再者， 在本實施形態中，「光源」表示「構成光照射部之光 源」’與「構成第一除去裝置或第二除去裝置之雷射光 源」有所區別。 152978.doc -22- 201140086 作為光照射裝置之構造，可採用具備丨個光源之構造， 亦可採用具備2個以上光源之構造。 在具備2個以上之光源之構造中，可令複數個光源相互 相同，亦可令複數個光源中之丨者與其他之光源不同，又 可令複數個光源全部相互不同。 此處，「光源不同」是指例如從複數個光源照射之光之 波長相互不同。 作為測定部，可採用例如具備複數個探針之電流電壓測 定器。 具體而言，作為電流電壓測定器之構造，可採用具備2 組分別設置有電壓探針與電流探針之—組探針之所謂的四 端子型者，或具備2個將電壓探針與電流探針一體設置之 探針者等》 丹有 穴闲zn(】 「尔六m ▲调休之構造以外 表示2以上之整數）個探針之構造。 藉由使用如此之電流電壓測宏哭 . — 錢利d可目時測定複數個裝 疋區域之電流電壓特性，哎斜蚪 竹「次針對1個特定區域使用複數僅 探針同時測定電流電壓特性。 在本發明第1實施形態之 's u f價裝置中，雷射光源、光 =請中任意—者以上宜可獨立地在太陽電池之上方 中;情形^價裝置宜具備可使雷射光源、光源、及探針 :者朝特定區域上移動之第—固定 置有第一固定部之裝置(雷射光源、光源及探針)係:移: I52978.doc -23· 201140086 者。 又’可將複數個第一固定部設置於評價裝置，且可將第 一固定部獨立設置於雷射光源、光源、及探針各者。該情 形’可藉由複數個第一固定部，使雷射光源、光源、及探 針各者獨立移動，停止於期望之位置而進行定位。 又，於如此之第一固定部宜設置有包含與第—固定部電 性連接之電腦等之第一控制部。該情形，第一控制部可自 動地控制第一固定部之動向。 再者’在本實施形態之評價裝置中，以設置有固定經評 價之太陽電池為佳，且使太陽電池移動，停止於期望之位 置而進行定位之第二固定部。 又，宜於如此之第二固定部設置有包含與第二固定部電 性連接之電腦等之第二控制部。該情形，第二控制部可自 動地控制第二固定部之動向。 又，第一控制部及第二控制部亦可一體構成。另，此處 雷射光源等移動之「太陽電池上」亦可為「太陽電池之基 板上」或「光電轉換體上」。 從雷射光源、光源、探針、第一固定部、及第二固定部 選擇之可移動之裝置、可移動之裝置之組合、及移動方向 並非限疋於上述之實施形態。可移動之裝置、可移動之裝 置之組合、及移動方向可根據目的任意選擇、設定。例 如，可令雷射光源、光源、探針、第一固定部、及第二固 定部中任一者之裝置朝平行於基板之方向移動，亦可令其 他之裝置朝垂直於基板之方向移動。 152978.doc •24- 201140086 但，上述之實施形態僅為本發明之一例，可採用根據狀 況之實施形態。 本發明第1實施形態之評價裝置可配置在與配置有太陽 電池之奴造裝置之位置不同之位置，亦可裝入太陽電池之 製造裝置中。 在太陽電池之製造裝置中裝入有評價裝置之情形下，例 如，太陽電池之製造裝置中積層有電極層或半導體層之裝 置（例如，成膜裝置）具有第一積層裝置及第二積層裝置之 功能。 藉由本發明之評價裝置，可容易且正確地除去半導體層 及第二電極層，因此可簡便且高精度地使評價區域與周邊 區域絕緣。 又，在如此之評價裝置中，亦可適宜地進行上述之步驟 (評價方法）之自動化。且，大量之樣品（微型電池）亦可以 短時間處理（評價）。 根據本發明，在太陽電池中設置與周邊區域電性絕緣之 評價區域，對包含該區域之區域照射光，藉此測定評價區 域之電流電壓特性而不受周邊區域之影響，從而可局部高 精度地評價光電轉換效率。 例如，在經測定電流電壓特性之複數個區域中，發現存 在光電轉換效率與其他區域有較大不同之區域時，可判街 該區域中存在構造缺陷。 另一方面，在不適用本發明第丨實施形態之評價方法之 情形下，所獲得之測定結果難以正確地判斷是否受到構造 152978.doc -25- 201140086 缺陷之影響。 如此，本發明可提供一種可簡便且高精度地評價太陽電 池之平行於薄膜方向之光電轉換效率之分佈，且在產生有 分佈時，可簡便且高精度地特定其部位之裝置及方法。 <太陽電池之評價方法之第2實施形態> '在第2實施形態中，對與上述第丨實施形態相同之構件附 注相同之符號，並省略或簡略化其說明。 作為藉由於製作微型電池後測定與周邊區域絕緣之評價 ㈣之電流電壓特性，而評價局部之光電轉換效率之第2 實施形態的方法’可舉出以下所示之方法。 圖5A〜圖6E係說明本發明第2實施形態之評價方法之 圖’圖5A〜圖5E係說明製作微型電池之步驟之概略剖面 圖’圖6A〜圖6E係概略平面圖。 首先’為形成與周邊區域電性絕緣之特定之評價區域， 而形成沿著評價區域除去第二電極層之第一除去部。其 次，在第一除去部中’進一步沿芸坌 、 7/〇者第—除去部除去半導體 層及第一電極層之一部分，形成第二除去部。 具體而言’如圖5A及圖6A所示，於且*上条 於具有光透射性之基 板11上依序積層第-電極層23及半導體層2卜其4於 導體層24上，將形成具有期望之圖案之第二電極層人25所使 用之掩膜91圖案化。 作為掩膜之形成方法，係使用例如於半導體層Μ上積層 光致抗蝕劑後進行曝光及顯影等衆 ^, 豕所周知之圖案化方法。 其二人’如圖5B及圖6B所示，於藉由 田圖案化而形成有掩 152978.doc • 26 - 201140086 第二電極層25。其次，如圖5(：及 於半導體層24上將第二電極層25 膜91之半導體層24上積層 圖6C所示，除去掩膜91， 圖案化。 藉此，在後面之步驟中，·产篓 σ者成為评彳貝區域Rd之區域除 去第二電極層25，形成右主道挪a 驭有丰導體層24之一部份露出之第一 除去部240a。 在本發明之第2實施形態之評價方法中，平面圖之第一 除去部240a之外形為四方形。 其次，如圖5D及圖6D所示，沿著第一除去部她之圖 案’除去露出之半導體層24之-部份與第-電極層23之- 部份，藉此形成在平面圖中外 固ΤίΤ心為四方形之第二除去部 240b ° 藉此’形成包含第-除去部⑽及第二除去部鳩之階 梯狀之槽240、與評價區域Rd。 在本發明第2實施形態之評價方法中，雖例示有除去半 導體層24、與*近半導體層24之第-電極層23之-部份之 構造，但亦可不除去第一電極層23。 八:乂埋藏形成之第二除去部240b，且不接觸於第二 電極層25的方式’沿著評價區域Rd之圖案形成導電層μ。 具體而s ，如圖5E及圖6E所示，以埋藏第二除去部 240b且不接觸於第二電極層以的方式，沿著評價區域 办成導電層92。藉此，獲得形成有電性連接導電層92與第 一電極層25之微型電池20a之太陽電池20。 導電層92係沿著槽240形成，且導電層92之形狀在平面 152978.doc -27· 201140086 圖中為四方形。導電層92可使用例如焊錫形成。 圖5E及圖6E所示之太陽電池20 ’除了形成有微型電池 20a以外，具有與圖1所示之太陽電池10相同之構造。 另，圖5A〜圖6E之基板11、第一電極層23、半導體層 24、及第二電極層25之材質或厚度，分別與圖2A〜圖3])之 基板11、第一電極層13、半導體層14、第二電極層25相 同。 又，評價區域Rd之大小或形狀與圖2A〜圖3D之評價區域 Rb之大小或形狀相同》 又’第一除去部24〇b之寬度或形狀與圖2A〜圖3D之第一 槽140a之寬度或形狀相同。 第一除去部240a之寬度或形狀可根據評價區域Rd之大小 或形狀等適宜調節。 其次’實施僅對與周邊區域電性絕緣之評價區域照射光 之步驟’與在對評價區域照射有光時，將探針接觸配置於 評價區域及導電層，測定評價區域之電流電壓特性之步 驟。 圖7A及圖7B係說明第2實施形態之測定步驟之電流電壓 特性之測定方法的圖’圖7 A係概略剖面圖，圖7B係概略 平面圖。又’圖7A及圖7B所示之箭頭係表示測定時之電 流。 具體而言，如圖7A及圖7B所例示，在利用圖5A〜圖6E所 示之步驟獲得之太陽電池20中’於基板丨丨之光照射面（未 形成有第一電極層23、半導體層24、及第二電極層25之 I52978.doc • 28 · 201140086 面）設置遮光板93。遮光板93具有開口部，通過開口部僅 有照射至基板11之光入射至太陽電池2 〇。另一方面，利用 遮光板93覆蓋之未形成有開口部之基板丨丨之部份未照射有 光。又，如圖7A所示，開口部之寬度與例如形成於評價區 域之第二電極層25之寬度一致。藉由如此使用遮光板93， 僅對微型電池20a局部地照射光，測定局部之光電轉換效 率。 圖7A及圖7B所示之符號330A、330B係表示電流電壓測 定器等之探針（電流電壓特性測定部、測定部）。微型電池 20a内之評價區域Rd接觸配置有第i探針33〇A。導電層％ 上接觸配置有第2探針330B。 藉由使電流從第1探針330A向第2探針330B流動，局部 地測定微型電池20a之電流電壓特性。 <太陽電池之評價裝置之第2實施形態> 池 其次，就以圖5A〜圖7B說明之評價方法中使用之太陽電 之評價裝置進行說明。本發明第2實施形態之太陽電池 之評價裝置包含：積層裝置’其係於基板上依序積層第一 電極層及半導體層；第二電極形戒部，其係於上述半導體 層上形成第二電極層；第一除去裝置，其係以沿著特定之 評價區域的方式’於上述第二電極層形成第一除去部；第 二除去裝置’其係在上述第一除去部中，沿著上述第一除 去部除去上述半導體層及上述第—電極層之—部份，藉此 形成第⑨去。p ,導電層形成部，其係以不接觸於上述第 電極層且沿者上述評價區域的方式，形成埋藏上述第 152978.doc -29· 201140086 二除去部之導電層；絕緣部，其使上述評價區域與周邊區 域電性絕緣’光照射部，其僅對與上述周邊區域電性絕緣 之上述評價區域照射光；及測定部，其係於上述評價區域 照射有光時’將探針接觸配置於上述評價區域及上述導電 層’測定上述評價區域之電流電壓特性。 此處’太陽電池之評價裝置之第2實施形態之第二除去 裝置，與太陽電池之評價裝置之第1實施形態之上述第一 除去裝置及第二除去裝置相同。作為上述導電層形成部， 係使用形成焊錫等之導電層之裝置。太陽電池之評價裝置 之第2實施形態之光照射部與太陽電池之評價裝置之第1實 施形態之光照射部相同。太陽電池之評價裝置之第2實施 形態之測定部與太陽電池之評價裝置之第1實施形態之測 定部相同。 再者’如此之評價裝置亦可進而具備沿著評價區域除去 第二電極層之裝置《該情形，如此之評價裝置可配置在與 配置有太陽電池之製造裝置之位置不同的位置，亦可裝入 太陽電池之製造裝置中。 【圖式簡單說明】 圖1A係例示利用本發明第1實施形態之評價方法所評價 之太陽電池之概略剖面圖。 圖1B係顯示以圖1 a之符號a表示之部份之放大剖面圖。 圖2A係說明本發明第1實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略剖面圖。 圖2B係說明本發明第1實施形態之評價方法之圖，且係 152978.doc 201140086 說明製作微型電池之步驟之概略剖面圖。 圖2C係說明本發明第1實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略剖面圖。 圖2D係說明本發明第1實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略剖面圖。 圖3 A係說明本發明第1實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略平面圖。 圖3B係說明本發明第！實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略平面圖。 圖3 C係說明本發明第1實施形態之評價方法 說明製作微型電池之步驟之概略平面圖。 圖3D係說明本發明第1實施形態之評價方法 之圖，且係 說明製作微型電池之步驟之概略平面圖。 圖4A係說明本發明第丨實施形態之評價方法 之圖’且係 的電流電壓特性之測定方法之概略剖面圖。 之測定步驟 圖4B係說明本發明第1實施形態之評價方法 的電流電壓特性之淛宋t^ .The structure of the first groove 140a is different from the width of the other portions, and the width of the first groove 140a is different as a whole (the width of the first groove 140a is different from the width of the other portions). The width of the first groove 14 may be changed as a whole. However, in terms of the point at which the groove can be easily formed, it is preferable that the width Wa of the first groove 140a is the same as the whole. In the first embodiment, the structure in which the first electrode layer 13 is not removed is exemplified, but a part of the first electrode layer 13 close to the semiconductor layer 14 may be removed in a range that does not interfere with the effects of the present invention. The surface area of Ra in the direction parallel to the substrate ( (surface area of the plan view of Fig. 3A) can be arbitrarily set according to the purpose (required), and can be set, for example, in consideration of the surface area of the evaluation region Rb to be described later, etc. The surface area is preferably about 36 to 225 mm2, more preferably about 64 to 144 mm2. As shown in Fig. 3A, when the surface shape is, for example, substantially square, the length of one side is preferably about 6 to 15 mm, more preferably 8~12 claws left In the first embodiment of the present invention, a structure in which the shape of the region Ra is substantially quadrangular in plan view is exemplified. In other words, the three-dimensional shape (the overall shape) of the region Ra is exemplified by a substantially quadrangular prism shape. The present invention is not limited to this structure, and the shape of the region Ra may be other polygonal shapes such as a substantially triangular shape or a substantially pentagonal shape, or may be another shape such as a substantially circular shape or a substantially elliptical shape. The composite shape forming of the shape of 152978.doc 201140086 in a plurality of such shapes may be combined to form an indefinite shape which is not in any of the plurality of shapes. However, it can be easily formed. In view of the region Ra, it is preferable that the region Ra is formed in a polygonal shape, in particular, in a substantially square shape. (Step of Forming Second Electrode Layer) In the evaluation method according to the first embodiment of the present invention, as shown in FIG. 2B and FIG. As shown, after the forming step of the first trench, the second electrode layer 15 is formed on the substrate layer 11 on the substrate 11 on which the first trench 14A is formed, and the second electrode layer 15 is buried. It is hidden in the first groove 140a (step of forming the second electrode layer). As a method of forming the second electrode layer 15, a well-known method is used. Further, the thickness of the second electrode layer 15 is buried in the first groove 140a. The thickness of the second electrode layer 15 may be the same as the thickness of the layer structure of the prior solar cell. In the first groove 140a, in the depth direction of the first groove 14 〇 & (the thickness direction of the semiconductor layer μ) The portion in which the second electrode layer 15 is buried may be formed. The first groove "" may have a void portion in one portion of the second electrode layer 15, but the smaller the volume of the void portion, the better, especially A trench 14 is buried as a whole by the second electrode layer 15. The second electrode layer forming step can be performed by the 0-bit of the first electrode layer 15 buried in the first trench 140a. The electrode layer 15 is in electrical contact with the first electrode layer 13. (Step of Forming Second Groove) In the method of the first embodiment of the present invention, as shown in FIG. 2C and FIG. 3C, after the step of forming the second electrode layer In the inner region surrounded by the first groove 140a in the direction parallel to the substrate 11 I52978.doc • 15 - 201140086, the semiconductor layer bucket and the second electrode layer 15' are removed thereby forming the second groove M〇b ( Formation step of the second groove). By this step, an evaluation region electrically insulated from the peripheral region is formed. By forming the second groove 140b, it is possible to obtain the solar cell 10 including the micro cell 1A of the evaluation region which is surrounded by the second groove 14〇b and insulated from the region Ra as a method of forming the second groove 140b. The same method as the method of forming the first grooves 14 〇 & As a method of removing the semiconductor layer 14 and the second electrode layer 15, the method of removing the semiconductor layer 14 may be the same as or different from the method of removing the second electrode layer 15. Further, the semiconductor layer 14 and the second electrode layer 15 can be simultaneously removed, and they can be removed separately in order. The width (width of the plan view of Fig. 3A) Wb of the second groove 140b is not limited to a specific width as long as the evaluation region Rb is electrically insulated from the peripheral region. The width Wb may be the same as the width Wa of the first groove 140a. In the first embodiment of the present invention, the second groove 140b has a structure in which the width Wb is entirely the same. However, the present invention is not limited to the structure 'the width of one portion of the second groove 140b and the other The difference in width of the portions may also make the width of the second groove 140b as a whole different (and the width of the second groove 140b may be changed integrally). However, in terms of the point at which the grooves can be easily formed, it is preferable that the width Wb of the second grooves 140b is the same as the whole. In the first embodiment of the present invention, the structure in which the first electrode layer j 3 is not removed is exemplified, but the semiconductor layer 14 may be removed by the 152978.doc -16 - 201140086 without departing from the effects of the present invention. One portion of the first electrode layer 13. The surface area of the valence region Rb parallel to the direction of the substrate ( (the surface area of the evaluation region Rb of the plan view of Fig. 3C) can be arbitrarily set so as to be smaller than the surface area of the region Ra parallel to the direction of the substrate Π. For example, the surface area of the evaluation region Rb should be set in consideration of the distance between the probes such as the current-voltage measuring device used for evaluating the photoelectric conversion efficiency. Generally, the surface area of the evaluation area Rb is preferably! ~! 〇〇 mm2 or so, more preferably about 9 to 49 mm2. The surface shape of the evaluation region Rb is, for example, as shown in Fig. 3A. When it is substantially square, the length of one side thereof is preferably about (7) mm or more preferably about 3 to 7 mm. In the first embodiment of the present invention, the structure in which the evaluation region Rbi has a substantially square shape in plan view is exemplified. In other words, the three-dimensional shape (the overall shape) of the evaluation region Rb is a structure having a substantially quadrangular prism shape. However, the present invention is not limited to this configuration, and the shape of the evaluation region milk may be other polygonal shapes such as a substantially triangular shape or a substantially pentagonal shape, and may have other shapes such as a substantially circular shape and a substantially elliptical shape. Further, the valence region Rb may be formed by combining a composite shape of two or more of the plurality of shapes, or may be formed in an indefinite shape that does not belong to any one of the plurality of shapes. However, in terms of the point at which the evaluation region milk can be easily formed, it is preferable that the evaluation region Rb is formed in a polygonal shape. In particular, the substantially square shape (step of forming the third groove) 152978.doc 17 201140086 In the evaluation method according to the first embodiment of the present invention, as shown in FIG. 2D and FIG. 3D, after the step of forming the second groove, The step of removing the semiconductor layer 14 and the second electrode layer 15 to form the third groove 140c (step of forming the third groove) is performed. In this step, in a direction parallel to the substrate 11, a third region is formed in an outer region of the first groove 140a in which the second electrode layer 15 is buried (a region outside the inner region surrounded by the first groove 14A) Slot 14〇c. With this step, the region including the entirety of the first groove 140a is electrically insulated from the peripheral region. In other words, by performing the third groove forming step, the region Rc surrounded by the third groove 140c can be electrically insulated from the peripheral region, and the photoelectric conversion efficiency of the evaluation region Rb2 can be further evaluated with high precision. Here, the region Rc includes the region Ra including the evaluation region Rb. As a method of forming the third groove 140c, the same method as the method of forming the second groove 140b can be used. The width Wc' of the first tie 140c is not limited to a specific width as long as the region Rc is electrically insulated from the peripheral region. The width We may be the same as the width Wb of the second groove 140b. In the case where it is assumed that there is no second groove display, the surface area of the region Rc of the plan view can be arbitrarily set so as to be larger than the surface area of the region Ra of the ▲ map. For example, the Yi Zen Tang Zen scented and worried. The current used in the first-time conversion efficiency of the voltage is measured by the distance between the probes of the voltage measuring device, etc., and the surface area of the region Rc is set. The shape of the area of the plan view in the case where the second groove 14Gb is absent is assumed to be the same as the shape of the area Ra or the evaluation area Rb. The form (configuration) of the third groove (10) may be the same as the second groove. 152978.doc 201140086 In the evaluation method according to the first embodiment of the present invention, the state in which the first electrode layer 13 is not removed is exemplified, but the vicinity of the semiconductor layer 14 may be removed without interfering with the effects of the present invention. One portion of an electrode layer 13. (Irradiation Step) In the evaluation method according to the first embodiment of the present invention, after the step of forming the third groove or after the step of forming the second groove when the step of forming the third groove is not performed, the inclusion and the peripheral region are included. The area of the evaluation area of the insulation is irradiated with light (irradiation step). For example, in the case where the solar cell 10 having the microbattery i〇a shown in FIGS. 2A to 3D is irradiated with light, the region irradiated with light may include the evaluation region Rb, or may be located The area on the outer side of the evaluation area is illuminated by light. As shown in Fig. 4A, the light system is irradiated to the substrate 11 of the solar cell 10, and is incident on the semiconductor layer 14 through the substrate 11. In the micro battery 10a, since the evaluation region Rb and the peripheral region are electrically insulated, the irradiation step can be easily performed without performing a step of limiting the area irradiated with light by a light shielding plate or the like while the irradiation step is being performed. (Measurement step) In the evaluation method according to the first embodiment of the present invention, the current-voltage characteristic of the evaluation region when the region containing the *flat mussel region is irradiated with light is measured (measurement step). For example, in the case where the current-voltage characteristics of the solar cell shown in Figs. 2A to 3D are measured, the measurement steps are performed as illustrated in Figs. 4A and 4B. 4A and 4B are views showing a method of measuring current and voltage characteristics in the measurement procedure of the first embodiment. Fig. 4a is a schematic cross-sectional view, and Fig. 4B is a plan view of 152978.doc 19 201140086. Moreover, the arrows shown in FIG. 4A and FIG. 4B indicate the current at the time of measurement. In the microbattery 1A shown in FIG. 4A and FIG. 4A, the first probe 330A (current-voltage characteristic measuring unit and measuring unit) is placed in contact with the second electrode layer 15 formed on the evaluation region Rb. The second probe 33〇B (current-voltage characteristic measuring unit and measuring unit) is placed in contact with the outer side of the second groove 140b located in the direction parallel to the substrate ( (outside the region surrounded by the second groove 14〇b) And formed on the second electrode layer 15 at a position close to the first groove 140a. The current and voltage characteristics of the micro battery 10a are measured by flowing a current from the first probe 330A to the second probe 330B. Here, the second electrode layer 15 is formed at a position opposite to the surface of the solar cell 1 〇 which is irradiated with light. By measuring the current-voltage characteristics in this manner, the evaluation region Rb insulated from the peripheral region can be surrounded, and the current-voltage characteristics can be measured via the second electrode layer 15 buried in the first trench 14A. At this time, since the evaluation area ruler 13 is surely insulated from other areas (peripheral areas), it is not affected by other areas. In the case where the probes disposed outside the evaluation region Rbi are arranged in the probes 330A and 330B, that is, the position where the second probe 330B is disposed is close to the first groove 140a in which the second electrode layer 15 is buried. For example, as shown in FIG. 4A, in the case where the concave portion l5〇a of the second electrode layer 15 is formed directly above the first groove 14 (the second groove layer 15), two can be disposed across the concave portion 15〇& In addition, the two second probes 33B can be disposed at a position (inside position) between the concave portion 150a and the second groove 14 in the direction parallel to the substrate. It is also possible to arrange both of the two second probes 330B at 152978.doc • 20·201140086 the position between the concave portion 15Ga parallel to the direction of the substrate and the third (1) (outside position). One or both of the two second probes 33A are disposed on the concave portion 15A. Further, in the evaluation method according to the third embodiment of the present invention, the probe 33OA may be used. 330B, a voltage is applied to the micro battery 1A, and the current (or resistance) flowing in the micro battery 10a is measured. For example, in a state where the micro battery 10a is not irradiated with light, the first electrode layer 13 is When a voltage is applied between the second electrode layer 而 to measure the resistance between the electrodes of the microbattery 1〇a, 1 can be detected before the measurement of the current-voltage characteristics. Whether or not the cell 1〇a is defective. In addition, the relationship between the resistance between the electrodes of the microbattery 10a and the current-voltage characteristics can be measured. In all the above steps of the evaluation method according to the first embodiment of the present invention, it is not necessary to utilize Automation of manual work can also be automated. In addition, when evaluating the photoelectric conversion efficiency of a large solar cell, it is not necessary to measure the photoelectric conversion efficiency required for the vicinity of the central portion in the direction parallel to the substrate. The step of dividing the battery into a plurality of steps is also required. In addition, the step of limiting the area of light irradiation by a light shielding plate or the like is not required. Thus, in view of the fact that the photoelectric conversion efficiency of a specific region of the solar cell can be easily and accurately evaluated, The evaluation method of the first embodiment of the present invention is remarkably superior to the previous evaluation method. <First Embodiment of the Solar Cell Evaluation Apparatus> The solar cell evaluation apparatus according to the first embodiment of the present invention is used in the above evaluation method. The evaluation device comprises: a first layering device, which is sequentially stacked on the base 152978.doc -21 - 201140086 a first layer removing device of the electrode layer and the semiconductor layer, wherein the semiconductor layer is removed to surround the specific evaluation region to form a first groove; and the second layering device is formed on the first groove a second electrode layer is stacked on the material conductor layer, thereby burying the second electrode layer in the first groove; and a second removing device is disposed in an inner region surrounded by the first groove in a direction parallel to the substrate Removing the above-mentioned "body layer and the second electrode layer, thereby forming a second groove, and electrically insulating the evaluation region from the peripheral region; and the light irradiation portion is electrically insulated from the upper edge region. The area irradiation light of the evaluation area and the measurement unit' are measured for the current-voltage characteristics of the evaluation area when the area including the evaluation area is irradiated with light. Here, the evaluation area is an evaluation area Rb which is evaluated by, for example, irradiating the solar cell 1A having the microbattery 10a shown in Figs. 2a to 3D. The first layering device and the second layering device are the same devices as those used in the manufacturing device of the prior solar cell and forming an electrode layer or a semiconductor layer. As the first-removal and second-removal device, a laser irradiation device having a laser light source can be exemplified. The laser irradiation device is preferably a laser with a wavelength of 500 to 56 〇 (10), which is usually irradiated with a green laser of 532 nm. As the light irradiation unit, a light irradiation device including a light source can be exemplified. In the present embodiment, the "light source" indicates that "the light source constituting the light-irradiating portion" is different from the "laser light source constituting the first removing device or the second removing device". 152978.doc -22- 201140086 As the structure of the light irradiation device, a structure having one light source may be employed, or a structure having two or more light sources may be employed. In a structure having two or more light sources, the plurality of light sources may be identical to each other, or the plurality of light sources may be different from the other light sources, and the plurality of light sources may be different from each other. Here, "different light source" means that, for example, the wavelengths of light irradiated from a plurality of light sources are different from each other. As the measuring unit, for example, a current-voltage damper having a plurality of probes can be used. Specifically, as the structure of the current-voltage measuring device, a so-called four-terminal type having two sets of probes each having a voltage probe and a current probe, or two voltage probes and currents can be used. Probes that are integrated with the probe, etc." Dan has a hole zn () "The structure of the six-m y ▲ 调 之 表示 表示 表示 ) ) ) ) ) ) ) ) ) 。 。 。 。 . . . . . . . . . . . . . . . . .. - The current and voltage characteristics of a plurality of mounting areas are measured by Qianli d, and the current and voltage characteristics are measured simultaneously using a plurality of probes for one specific area. In the first embodiment of the present invention, 's uf In the price device, the laser light source, light = please any one of them should be independently above the solar cell; the situation should be equipped with a laser source, a light source, and a probe to a specific area. The first part of the movement - the device with the first fixed portion (laser source, light source and probe) is: shift: I52978.doc -23· 201140086. Also 'multiple first fixed parts can be set in the evaluation device And the first fixed part can be independent It is disposed in each of the laser light source, the light source, and the probe. In this case, the laser light source, the light source, and the probe can be independently moved by a plurality of first fixing portions, and stopped at a desired position for positioning. Further, in such a first fixing portion, a first control portion including a computer or the like electrically connected to the first fixing portion is preferably provided. In this case, the first control portion can automatically control the movement of the first fixing portion. In the evaluation device of the present embodiment, it is preferable to provide a second fixing portion that is preferably provided with a fixed solar cell and that moves the solar cell to stop at a desired position. The second fixing portion is provided with a second control portion including a computer or the like electrically connected to the second fixing portion. In this case, the second control portion can automatically control the movement of the second fixing portion. Further, the first control portion and the second portion The control unit may be integrally formed. In addition, the "on the solar cell" in which the laser light source or the like is moved may be "on the substrate of the solar cell" or "on the photoelectric conversion body". The movable device, the combination of the movable device, and the moving direction selected from the laser light source, the light source, the probe, the first fixing portion, and the second fixing portion are not limited to the above-described embodiments. The movable device, the combination of the movable devices, and the moving direction can be arbitrarily selected and set according to the purpose. For example, the device of any one of the laser light source, the light source, the probe, the first fixing portion, and the second fixing portion may be moved in a direction parallel to the substrate, or the other device may be moved in a direction perpendicular to the substrate. . 152978.doc • 24-201140086 However, the above-described embodiment is merely an example of the present invention, and an embodiment according to the state can be employed. The evaluation device according to the first embodiment of the present invention can be disposed at a position different from the position at which the slave device of the solar battery is disposed, and can be incorporated in the manufacturing device of the solar battery. In the case where an evaluation device is incorporated in a manufacturing apparatus of a solar cell, for example, a device in which an electrode layer or a semiconductor layer is laminated in a manufacturing device of a solar cell (for example, a film forming apparatus) has a first layering device and a second layering device The function. According to the evaluation apparatus of the present invention, the semiconductor layer and the second electrode layer can be easily and accurately removed, so that the evaluation region can be insulated from the peripheral region with ease and accuracy. Further, in such an evaluation apparatus, the above-described steps (evaluation method) can be appropriately automated. Moreover, a large number of samples (micro batteries) can also be processed (evaluated) in a short time. According to the present invention, an evaluation region electrically insulated from a peripheral region is provided in a solar cell, and a region including the region is irradiated with light, thereby measuring current-voltage characteristics of the evaluation region without being affected by the peripheral region, thereby achieving local high precision The photoelectric conversion efficiency was evaluated. For example, in a plurality of regions where the current-voltage characteristics are measured, it is found that there is a structural defect in the region when the photoelectric conversion efficiency is greatly different from that in other regions. On the other hand, in the case where the evaluation method of the third embodiment of the present invention is not applied, it is difficult to accurately judge whether or not the measurement result obtained is affected by the defect of the structure 152978.doc -25-201140086. As described above, the present invention can provide an apparatus and method for easily and accurately evaluating the distribution of the photoelectric conversion efficiency of the solar cell parallel to the film direction, and which can be easily and accurately specified when the distribution is generated. <Second Embodiment of the Method for Evaluating the Solar Cell> 'In the second embodiment, the same members as those in the above-described embodiment are denoted by the same reference numerals, and their description will be omitted or simplified. The method of the second embodiment for evaluating the local photoelectric conversion efficiency by measuring the current-voltage characteristics of the evaluation (4) of the insulation of the peripheral region after the production of the micro-battery is as follows. 5A to 6E are views showing a method of evaluating the second embodiment of the present invention. Figs. 5A to 5E are schematic cross-sectional views showing a step of fabricating a microbattery. Fig. 6A to Fig. 6E are schematic plan views. First, a first removal portion that removes the second electrode layer along the evaluation region is formed to form a specific evaluation region electrically insulated from the peripheral region. Then, in the first removing portion, a portion of the semiconductor layer and the first electrode layer is removed along the 芸坌, 7/〇 first removing portion to form a second removing portion. Specifically, as shown in FIG. 5A and FIG. 6A, the first electrode layer 23 and the semiconductor layer 2 are sequentially laminated on the substrate 11 having the light transmissive property, and the fourth layer is formed on the conductor layer 24. The mask 91 used by the second electrode layer person 25 having the desired pattern is patterned. As a method of forming the mask, for example, a photoresist is deposited on a semiconductor layer, and exposure and development are carried out, and the like. As shown in Fig. 5B and Fig. 6B, the two of them are formed by patterning 152978.doc • 26 - 201140086 second electrode layer 25. Next, as shown in Fig. 5 (and the semiconductor layer 24 of the second electrode layer 25 film 91 is laminated on the semiconductor layer 24, as shown in Fig. 6C, the mask 91 is removed and patterned. Thereby, in the subsequent steps, The yttrium is the first removal portion 240a in which the second electrode layer 25 is removed in the area where the mussel region Rd is evaluated, and a part of the right main channel abundance conductor layer 24 is exposed. The second embodiment of the present invention is disclosed. In the method of evaluating the morphology, the first removal portion 240a of the plan view is formed in a square shape. Next, as shown in FIGS. 5D and 6D, the portion of the exposed semiconductor layer 24 is removed along the pattern of the first removal portion. And a portion of the first electrode layer 23, thereby forming a second removal portion 240b° which is a square in the plan view, thereby forming a stepped shape including the first removal portion (10) and the second removal portion In the evaluation method of the second embodiment of the present invention, the structure of the semiconductor layer 24 and the portion of the first electrode layer 23 of the semiconductor layer 24 is removed, but the structure may be omitted. The first electrode layer 23 is removed. Eight: a second removing portion 240b formed by burying, And forming the conductive layer μ along the pattern of the evaluation region Rd without contacting the second electrode layer 25. Specifically, as shown in FIGS. 5E and 6E, the second removal portion 240b is buried and not in contact with the second The electrode layer is formed into a conductive layer 92 along the evaluation region. Thereby, the solar cell 20 in which the microbattery 20a electrically connecting the conductive layer 92 and the first electrode layer 25 is formed is obtained. The conductive layer 92 is along the groove. 240 is formed, and the shape of the conductive layer 92 is square in the plane of 152978.doc -27· 201140086. The conductive layer 92 can be formed using, for example, solder. The solar cell 20' shown in Figs. 5E and 6E is formed with a micro battery. Other than 20a, it has the same structure as the solar cell 10 shown in Fig. 1. In addition, the materials or thicknesses of the substrate 11, the first electrode layer 23, the semiconductor layer 24, and the second electrode layer 25 of Figs. 5A to 6E, respectively The substrate 11, the first electrode layer 13, the semiconductor layer 14, and the second electrode layer 25 of FIG. 2A to FIG. 3) are the same. Further, the size or shape of the evaluation region Rd is the same as the size or shape of the evaluation region Rb of FIGS. 2A to 3D. The width or shape of the first removal portion 24b is the same as that of the first groove 140a of FIGS. 2A to 3D. The width or shape is the same. The width or shape of the first removal portion 240a can be appropriately adjusted in accordance with the size or shape of the evaluation region Rd. Next, 'the step of irradiating light only to the evaluation region electrically insulated from the peripheral region' and the step of placing the probe in contact with the evaluation region and the conductive layer when irradiating the evaluation region, and measuring the current-voltage characteristics of the evaluation region . Fig. 7A and Fig. 7B are views showing a method of measuring current-voltage characteristics in the measurement procedure of the second embodiment. Fig. 7A is a schematic cross-sectional view, and Fig. 7B is a schematic plan view. Further, the arrows shown in Figs. 7A and 7B indicate the current at the time of measurement. Specifically, as illustrated in FIGS. 7A and 7B, in the solar cell 20 obtained by the steps shown in FIGS. 5A to 6E, the light-irradiating surface of the substrate is formed (the first electrode layer 23, the semiconductor is not formed). The visor 93 is provided on the layer 24 and the second electrode layer 25 (I52978.doc • 28 · 201140086). The light shielding plate 93 has an opening through which only light irradiated to the substrate 11 is incident on the solar cell 2 . On the other hand, a portion of the substrate 未 which is not covered with the opening portion covered by the light shielding plate 93 is not irradiated with light. Further, as shown in Fig. 7A, the width of the opening portion coincides with, for example, the width of the second electrode layer 25 formed in the evaluation region. By using the light shielding plate 93 as described above, only the microbattery 20a is partially irradiated with light, and the local photoelectric conversion efficiency is measured. Symbols 330A and 330B shown in Figs. 7A and 7B are probes (current-voltage characteristic measuring unit and measuring unit) such as a current-voltage measuring device. The i-th probe 33A is disposed in contact with the evaluation region Rd in the micro battery 20a. The second probe 330B is placed in contact with the conductive layer %. The current and voltage characteristics of the microbattery 20a are locally measured by flowing a current from the first probe 330A to the second probe 330B. <Second Embodiment of Solar Cell Evaluation Apparatus> Cell Next, the solar power evaluation apparatus used in the evaluation method described with reference to Figs. 5A to 7B will be described. In the solar cell evaluation apparatus according to the second embodiment of the present invention, the stacking device includes a first electrode layer and a semiconductor layer which are sequentially laminated on the substrate, and a second electrode ring portion which is formed on the semiconductor layer to form a second layer. An electrode layer; a first removing device that forms a first removing portion on the second electrode layer along a specific evaluation region; and a second removing device that is in the first removing portion along the The first removing portion removes the portion of the semiconductor layer and the first electrode layer, thereby forming the ninth. a conductive layer forming portion that forms a conductive layer that buryes the removal portion of the first 152978.doc -29 · 201140086, and the insulating portion, so as to be in contact with the first electrode layer and along the evaluation region; The evaluation region and the peripheral region are electrically insulated from the light irradiation portion, and the light is irradiated only to the evaluation region electrically insulated from the peripheral region; and the measurement portion is configured to contact the probe when the evaluation region is irradiated with light. The current-voltage characteristics of the evaluation region were measured in the evaluation region and the conductive layer '. Here, the second removing device of the second embodiment of the solar cell evaluation device is the same as the first removing device and the second removing device of the first embodiment of the solar cell evaluating device. As the conductive layer forming portion, a device for forming a conductive layer such as solder is used. The light-irradiating portion of the second embodiment of the solar cell evaluation device is the same as the light-irradiating portion of the first embodiment of the solar cell evaluation device. The measuring unit of the second embodiment of the solar cell evaluation device is the same as the measuring unit of the first embodiment of the solar cell evaluation device. Further, the evaluation device may further include a device for removing the second electrode layer along the evaluation region. In this case, the evaluation device may be disposed at a position different from the position at which the solar cell manufacturing device is disposed, and may be mounted. Into the manufacturing device of the solar cell. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a schematic cross-sectional view showing a solar cell evaluated by the evaluation method according to the first embodiment of the present invention. Fig. 1B is an enlarged cross-sectional view showing a portion indicated by a symbol a of Fig. 1a. Fig. 2A is a view showing a method of evaluating the first embodiment of the present invention, and is a schematic cross-sectional view showing a step of fabricating a microbattery. Fig. 2B is a view showing a method of evaluating the first embodiment of the present invention, and a schematic cross-sectional view showing a step of fabricating a microbattery is described in 152978.doc 201140086. Fig. 2C is a view showing a method of evaluating the first embodiment of the present invention, and is a schematic cross-sectional view showing a step of fabricating a microbattery. Fig. 2D is a view showing a method of evaluating the first embodiment of the present invention, and is a schematic cross-sectional view showing a step of fabricating a microbattery. Fig. 3A is a view showing a method of evaluating the first embodiment of the present invention, and is a schematic plan view showing a step of fabricating a microbattery. Figure 3B illustrates the invention! A diagram of an evaluation method of an embodiment, and a schematic plan view showing a procedure for fabricating a microbattery. Fig. 3 is a view showing a method of evaluating the first embodiment of the present invention. Fig. 3 is a view showing a method of evaluating the first embodiment of the present invention, and is a schematic plan view showing a step of fabricating a microbattery. Fig. 4A is a schematic cross-sectional view showing a method of measuring current-voltage characteristics in a diagram of the evaluation method of the embodiment of the present invention. Measurement procedure Fig. 4B is a view showing the current-voltage characteristics of the evaluation method according to the first embodiment of the present invention.
152978.doc 法之測定步驟 之評價方法之圖，且係 之評價方法之圖，且係 之評價方法之圖，且係 之評價方法之圖，且係 • 31 - 201140086 說明製作微型電池之步驟之概略剖面圖。 圖5E係說明本發明第2實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略剖面圖。 圖6A係說明本發明第2實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略平面圓。 圖6B係說明本發明第2實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略平面圖。 圖6C係說明本發明第2實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略平面圖。 圖6D係說明本發明第2實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略平面圖。 圖6E係說明本發明第2實施形態之評價方法之圖，且係 說明製作微型電池之步驟之概略平面圖。 ^ 圖7A係說明本發明第2實施形態之評價方法之測定步驟 的電流電壓特性之測定方法之概略剖面圖。 圖7B係說明本發明第2實施形態之評價方法之測定步驟 的電流電壓特性之測定方法之概略刮面圖。 圖8 A係用於說明局部測定太陽電池之光電轉換效率之先 前之測定方法的概略剖面圖。 圖8 B係用於說明局部測定太陽電池之光電轉換效率之先 前之測定方法的概略剖面圖。 圖8C係用於說明局部測定太陽電池之光電轉換效率之先 前之測定方法的概略剖面圖。 圖8D係用於說明局部測定太陽電池之光電轉換效率之先 152978.doc •32- 201140086 前之測定方法的概略剖面圖β 圖8Ε係用於說明局部測定太陽電池之光電轉換效率之先 前之測定方法的概略剖面圖。 圖8F係用於說明局部測定太陽電池之光電轉換效率之先 前之測定方法的概略剖面圖。 圖9係例示具備微型電池之太陽電池之概略平面圖。 圖1 〇係用於說明對微型電池照射光之先前方法之概略剖 面圖。 圖11係顯示先前方法中，在測定光電轉換效率時被分^ 之太陽電池之例的概略圖。 【主要元件符號說明】 10 ' 20 太陽電池 10a 微型電池 11 基板 11a 第1面（基板之一 12 光電轉換體 13、23 第一電極層 14 ' 24 半導體層 15、25 第二電極層 92 導電層 140a 第一槽 140b 第二槽 140c 第三槽 240a 第一除去部 面） 152978.doc -33· 201140086 240b 第二除去部 330 探針 Rb 評價區域 Rd 評價區域 152978.doc ·34·152978.doc Diagram of the evaluation method of the measurement procedure of the method, and a diagram of the evaluation method, and a diagram of the evaluation method, and a diagram of the evaluation method, and the method of making a micro battery is described in 31-201140086 A schematic cross-sectional view. Fig. 5E is a view showing a method of evaluating the second embodiment of the present invention, and is a schematic cross-sectional view showing a step of fabricating a microbattery. Fig. 6A is a view for explaining an evaluation method according to a second embodiment of the present invention, and shows a schematic plane circle for the step of fabricating a micro battery. Fig. 6B is a view showing a method of evaluating the second embodiment of the present invention, and is a schematic plan view showing a step of fabricating a microbattery. Fig. 6C is a view showing a method of evaluating the second embodiment of the present invention, and is a schematic plan view showing a step of fabricating a microbattery. Fig. 6 is a view showing a method of evaluating the second embodiment of the present invention, and is a schematic plan view showing a step of fabricating a microbattery. Fig. 6E is a view showing a method of evaluating the second embodiment of the present invention, and is a schematic plan view showing a step of fabricating a microbattery. Fig. 7A is a schematic cross-sectional view showing a method of measuring current-voltage characteristics in the measurement procedure of the evaluation method according to the second embodiment of the present invention. Fig. 7B is a schematic plan view showing a method of measuring current-voltage characteristics in the measurement procedure of the evaluation method according to the second embodiment of the present invention. Fig. 8A is a schematic cross-sectional view for explaining a prior measurement method for partially measuring the photoelectric conversion efficiency of a solar cell. Fig. 8B is a schematic cross-sectional view for explaining a prior measurement method for partially measuring the photoelectric conversion efficiency of a solar cell. Fig. 8C is a schematic cross-sectional view for explaining a prior measurement method for partially measuring the photoelectric conversion efficiency of a solar cell. Figure 8D is a schematic cross-sectional view showing the measurement method for the partial measurement of the photoelectric conversion efficiency of the solar cell. 152978.doc • 32-201140086 The measurement method before the determination of the photoelectric conversion efficiency of the solar cell is partially described. A schematic cross-sectional view of the method. Fig. 8F is a schematic cross-sectional view for explaining a prior measurement method for partially measuring the photoelectric conversion efficiency of a solar cell. Fig. 9 is a schematic plan view showing a solar battery including a micro battery. Fig. 1 is a schematic cross-sectional view showing a prior art method of irradiating light to a micro battery. Fig. 11 is a schematic view showing an example of a solar cell which is divided when measuring photoelectric conversion efficiency in the prior art. [Description of main component symbols] 10 ' 20 Solar cell 10a Microbattery 11 Substrate 11a First surface (one of the substrates 12 Photoelectric conversion bodies 13, 23 First electrode layer 14' 24 Semiconductor layer 15, 25 Second electrode layer 92 Conductive layer 140a first groove 140b second groove 140c third groove 240a first removal surface) 152978.doc -33· 201140086 240b second removal portion 330 probe Rb evaluation region Rd evaluation region 152978.doc · 34·